WO2021042501A1 - 一种显示面板及显示装置 - Google Patents

一种显示面板及显示装置 Download PDF

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Publication number
WO2021042501A1
WO2021042501A1 PCT/CN2019/116128 CN2019116128W WO2021042501A1 WO 2021042501 A1 WO2021042501 A1 WO 2021042501A1 CN 2019116128 W CN2019116128 W CN 2019116128W WO 2021042501 A1 WO2021042501 A1 WO 2021042501A1
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WIPO (PCT)
Prior art keywords
layer
thin film
film transistor
substrate
display panel
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PCT/CN2019/116128
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English (en)
French (fr)
Inventor
肖军城
艾飞
颜源
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武汉华星光电技术有限公司
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Priority to US16/642,029 priority Critical patent/US10884273B1/en
Publication of WO2021042501A1 publication Critical patent/WO2021042501A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1365—Matching; Classification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Definitions

  • the present disclosure relates to the field of display, and in particular to a display panel and a display device.
  • Fingerprint recognition as a biometric method has attracted widespread attention recently, especially in mobile payments. People have also invented many fingerprint recognition methods, such as optical, capacitive, microwave, temperature and ultrasonic. However, each method has its advantages and disadvantages.
  • the traditional optical sensor method cannot be light and thin, especially under the requirements of high resolution, the traditional equipment is bulky and cannot be portable, so it is difficult to integrate into a device such as a mobile phone.
  • other methods solve the problem of lightness and thinness, they cannot realize a large-area array or can not integrate other functions, and the process is complicated and the cost is high.
  • an amorphous silicon flat panel detector for medical use is a traditional optical sensor, including an amorphous silicon photodiode and a thin film transistor, and its working principle is: on the anode of the amorphous silicon photodiode, that is, on the P-type layer Apply a negative voltage between -3V and -9V.
  • the amorphous silicon photodiode When the light signal irradiates the amorphous silicon photodiode, the amorphous silicon photodiode generates electron-hole pairs. Under the action of an electric field, holes converge in the anode P-type layer, and electrons converge to the cathode N-type layer.
  • the thin film transistor is turned off, the signal accumulates continuously, and when the thin film transistor is turned on, the charge is output to the data line. The strength of the light signal is determined according to the magnitude of the detected charge signal.
  • the fingerprint sensor is an optical fingerprint recognition sensor, which requires independent optical path and circuit support, which has a greater impact on the Array manufacturing process and the aperture ratio of the display substrate.
  • the fingerprint sensor usually adopts the optical diffuse reflection method.
  • the fingerprint recognition process after the light source hits the finger, the light beam is diffusely reflected by the finger, and the wave trough (hereinafter referred to as the valley) and the wave crest (hereinafter referred to as the ridge) of the finger fingerprint are diffusely reflected
  • the light energy will be different, the light energy of the valley is lower than the light energy of the ridge, and the difference is used for fingerprint identification.
  • the collimation of the diffused light reflected by the valleys and ridges of a finger fingerprint is poor and the difference in light energy is very small.
  • there is interference from ambient light between the valleys and ridges of the finger fingerprint so it is difficult to accurately perform fingerprints.
  • Recognition In addition, the fingerprint sensor is affected by the twice light absorption of the liquid crystal, and its fingerprint recognition sensitivity is greatly attenuated.
  • the purpose of the present disclosure is to provide a display panel and a display device to solve the technical problem that the fingerprint sensor in the prior art affects the array manufacturing process and the aperture ratio of the display panel, and the sensitivity of fingerprint recognition is low.
  • the present disclosure provides a display panel, including a display substrate, a counter substrate, and a backlight source; the counter substrate is arranged opposite to the display substrate; the backlight source includes a detection light source and is disposed under the display substrate; wherein,
  • the display substrate includes a first thin film transistor layer, a touch electrode, and a pixel definition layer; the first thin film transistor layer has a plurality of thin film transistors; the touch electrode is provided on one side of the first thin film transistor layer The surface; the pixel definition layer is provided on the touch electrode and the surface on one side of the first thin film transistor layer; the pixel definition layer has a plurality of pixel regions, and each pixel region is correspondingly provided above a thin film transistor;
  • the counter substrate includes a second thin film transistor layer and a photosensitive element; the second thin film transistor layer has a plurality of thin film transistors; the photosensitive element is connected below the second thin film transistor layer; the photosensitive element receives The reflected light of a user's fingerprint is used to identify the user
  • the photosensitive element includes a cathode, an electron transport layer, a photosensitive layer, a hole transport layer, and an anode;
  • the cathode is provided on the surface of one side of the second thin film transistor layer;
  • the electron transport layer is provided on the The surface of the cathode away from the second thin film transistor layer;
  • the photosensitive layer is provided on the surface of the electron transport layer away from the second thin film transistor layer;
  • the hole transport layer is provided on the photosensitive layer The layer is away from the surface of the second thin film transistor layer; the anode is arranged on the surface of the hole transport layer away from the second thin film transistor layer.
  • the second thin film transistor layer includes a first gate insulating layer, a first gate, a second gate insulating layer, a first active layer, and a first source and drain that are stacked.
  • the counter substrate further includes a first substrate, a black matrix pattern, and a first passivation layer; the black matrix pattern is provided on a surface on one side of the first substrate; the first passivation layer is provided on The second thin film transistor layer is away from the surface of the first substrate; the first flat layer is provided on the photosensitive element, and the first passivation layer is away from the surface of the first substrate; wherein , The second thin film transistor layer is arranged on the black matrix pattern and the surface on one side of the first substrate.
  • the detection light is emitted by the detection light source, passes through the display panel and irradiates a user's fingerprint, and is emitted by the fingerprint to form reflected light;
  • the element acquires the reflected light, and recognizes the pattern of the user's fingerprint according to the change in the intensity of the reflected light.
  • the display panel further includes a liquid crystal layer disposed between the display substrate and the counter substrate; wherein the first thin film transistor layer provides a driving voltage for the liquid crystal layer; the second thin film The transistor layer provides driving current for the photosensitive element.
  • the display substrate further includes a second flat layer, a common electrode, a second passivation layer, a via hole, and a pixel electrode.
  • the second flat layer is disposed on the pixel definition layer away from the first thin film transistor layer. The surface of one side; the common electrode is provided on the surface of the second flat layer away from the first thin film transistor layer, and is connected to the touch electrode; the second passivation layer is provided on the common Electrode, the second flat layer away from the surface of the first thin film transistor layer; the via hole penetrates the second passivation layer, the second flat layer and the pixel definition layer, the over The position of the hole corresponds to the position of the second source and drain; the pixel electrode fills the via hole and is connected to the second source and drain.
  • the first thin film transistor layer includes a second active layer, a third gate insulating layer, a third gate, a third gate insulating layer, a dielectric layer, and a second source and drain that are stacked.
  • the display substrate further includes a second base, a light-shielding pattern, and a buffer layer; the light-shielding pattern is provided on a surface of one side of the second base; the buffer layer is provided on the light-shielding pattern and the second The surface on the side of the substrate; wherein the first thin film transistor layer is provided on the surface of the buffer layer on the side away from the second substrate.
  • the present disclosure also provides a display device, including the display panel described above.
  • the technical effect of the present disclosure is to provide a display panel and a display device.
  • the color film array process is adopted on the display substrate side, which can solve the difficulty of integrating In
  • the problem of the Cell fingerprint sensor array increases the aperture ratio of the display panel; arranging the photosensitive element in the opposite substrate of the light-emitting surface can shorten the distance between the photosensitive element and the fingerprint of the finger, shorten the light stroke, and reduce the loss of reflected light from the fingerprint. So as to improve the fingerprint recognition sensitivity of the display panel, and realize the LCD display panel In The fingerprint recognition under the Cell screen can provide people with a better unlocking experience.
  • FIG. 1 is a schematic diagram of the structure of the display panel according to the embodiment.
  • FIG. 2 is a schematic diagram of the structure of the display substrate according to this embodiment.
  • FIG. 3 is a schematic diagram of the structure of the counter substrate according to the embodiment.
  • FIG. 6 is a flow chart of the steps of preparing the first thin film transistor layer according to this embodiment.
  • FIG. 7 is a flowchart of the steps of setting the opposite substrate according to the embodiment.
  • FIG. 8 is a flow chart of the steps of preparing the second thin film transistor layer according to this embodiment.
  • first passivation layer 49 first passivation layer; 50 first flat layer; 51 support pillars;
  • This embodiment provides a display panel.
  • the display panel realizes optical fingerprint recognition through a display substrate and an opposite substrate.
  • the display substrate is a color film array substrate (color film array substrate).
  • filter on array abbreviation: COA
  • COA filter on array
  • the display panel includes a backlight source 1, a display substrate 2, a liquid crystal layer 3 and a counter substrate 4.
  • the backlight source 1 is arranged under the display substrate 2, and the liquid crystal layer 3 is arranged between the display substrate 2 and the counter substrate 4 to realize fingerprint recognition and touch control functions.
  • the backlight source 1 may include an illumination light source and a detection light source arranged at intervals, the illumination light source is used for emitting illumination light, and the detection light source is used for emitting detection light.
  • the solid arrow shows the irradiated light
  • the broken line shows the detection light.
  • the irradiation light source is a white light LED, and the irradiation light may be white light
  • the detection light source is an infrared LED, and the detection light may be infrared light.
  • the display substrate 2 includes a second substrate 21, a light shielding pattern 22, a buffer layer 23, a first thin film transistor layer 24, a touch electrode 25, a pixel definition layer 26, a second flat layer 27, a common electrode 28, The second passivation layer 29 and the pixel electrode 30.
  • the second substrate 21 is a PI substrate and has good flexibility.
  • the light-shielding patterns 22 are arranged on the upper surface of the second substrate 21 at intervals, and have a good light-shielding effect.
  • the buffer layer 23 is provided on the upper surface of the second substrate 21 and the light shielding pattern 22.
  • the first thin film transistor layer 24 includes a second active layer 241, a third gate insulating layer 242, a second gate 243, a fourth gate insulating layer 244, a dielectric layer 245, and a second source and drain 246.
  • the second active layer 241 and the third gate insulating layer 242 are sequentially disposed on the upper surface of the buffer layer 23, and the second active layer 241 includes a P-type silicon material and an N-type silicon material.
  • the first gate 243 is disposed on the upper surface of the third gate insulating layer 242 and is disposed opposite to the second active layer 241.
  • the dielectric layer 245 and the fourth gate insulating layer 244 are sequentially disposed on the upper surface of the first gate 243.
  • the second source and drain electrodes 246 are disposed on the upper surface of the dielectric layer 245 and connected to both ends of the second active layer 241.
  • the dielectric layer 245 and the fourth gate insulating layer 244 are provided with a first through hole, and the second source and drain electrodes 246 fill the first through hole and are connected to the second active layer 241.
  • the touch electrode 25 includes a plurality of touch signal lines, which are arranged in the same layer as the second source and drain electrodes 246.
  • the touch electrode 25 and the second source and drain electrodes 246 use the same material and are formed in the same mask process.
  • the pixel defining layer 26 is provided on the upper surface of the touch electrode 25 and the first thin film transistor layer 24.
  • the pixel defining layer 26 has a plurality of pixel regions, and each pixel region is correspondingly disposed above a thin film transistor.
  • the pixel defining layer 26 includes a plurality of color sub-pixel regions arranged in sequence.
  • the color sub-pixels may include a red sub-pixel region, a green sub-pixel region, or a blue sub-pixel region.
  • the thin film transistor is equivalent to a driving switch, which controls the sub-pixels in the pixel definition layer 26 to emit light, realizes a COA array, and increases the aperture ratio of the display panel.
  • the second flat layer 27 is provided on the upper surface of the pixel definition layer 26.
  • the common electrode 28 is provided on the upper surface of the second flat layer 27, the second flat layer 27 and the pixel defining layer 26 are provided with second through holes, and the common electrode 28 is electrically connected to the touch electrode 25 through the second through holes.
  • the second passivation layer 29 is provided on the upper surface of the common electrode 28 and the second flat layer 27.
  • the material of the second passivation layer 29 includes but is not limited to silicon oxide and silicon nitride, which has a good insulating effect.
  • the via hole 20 penetrates the second passivation layer 29, the second flat layer 27 and the pixel definition layer 26, and the position of the via hole 20 corresponds to the position of the second source and drain electrodes 246.
  • the pixel electrode 30 fills the via hole 20 and is electrically connected to the second source and drain electrodes 246.
  • the material of the pixel electrode 30 includes but is not limited to ITO.
  • the display substrate is a color filter on array (COA), and the process of using the color filter array can increase the aperture ratio of the display panel.
  • COA color filter on array
  • the counter substrate 4 includes a first substrate 41, a black matrix pattern 42, a second thin film transistor layer 43, a photosensitive element 10, a first passivation layer 49, a first flat layer 50 and support pillars 51.
  • the photosensitive element 10 includes a cathode 44, an electron transport layer 45, a photosensitive layer 46, a hole transport layer 47, and an anode 48.
  • the black matrix patterns 42 are arranged at intervals on the upper surface of the first substrate 41 and are arranged opposite to the light-shielding pattern 22, so that a better light-shielding effect can be obtained.
  • the light shielding pattern 22 shields the irradiation light from being transmitted to the photosensitive element 10, and the detection light can be irradiated onto the fingerprint through the light shielding pattern 22.
  • the black matrix pattern 42 can allow the detection light to pass through and prevent the illuminating light from passing through, so that the display panel has a good display effect and the touch sensitivity of the display panel is improved.
  • the second thin film transistor layer 43 is disposed on the upper surface of the black matrix pattern 42 and the first substrate 41.
  • the second thin film transistor layer 43 includes a plurality of thin film transistors, and each thin film transistor includes a first gate insulating layer 431, a first gate 432, a second gate insulating layer 433, a first active layer 434, and a first source and drain. ⁇ 435.
  • the first gate insulating layer 431 is disposed on the upper surface of the black matrix pattern 42, the first gate 432 is disposed on the upper surface of the first gate insulating layer 431, and the second gate insulating layer 433 is disposed on the upper surface of the first gate 432.
  • the first active layer 434 is disposed on the upper surface of the second gate insulating layer 433 and is disposed opposite to the first gate 432.
  • the material of the first active layer 434 includes but is not limited to IGZO.
  • the first source and drain electrodes 435 are provided at both ends of the first active layer 434.
  • the photosensitive element 10 is a photodiode, and the photodiode is a PIN-type photodiode.
  • the PIN-type photodiode is also called a PIN junction diode or a PIN diode.
  • the size of the photosensitive device is on the order of micrometers, and a single photosensitive device is smaller than the size of the valleys and ridges of a finger, and has the characteristics of short transit time and high sensitivity.
  • the photosensitive element 10 includes a cathode 44, an electron transport layer 45, a photosensitive layer 46, a hole transport layer 47, and an anode 48 in this order from top to bottom.
  • the cathode 44 is provided on the upper surface of the second thin film transistor layer 43. Specifically, the cathode 44 is provided on the upper surface of the second gate insulating layer 433 and is provided in the same layer as the first active layer 434.
  • the electron transport layer 45, the photosensitive layer 46, and the hole transport layer 47 are sequentially disposed on the upper surface of the cathode 44.
  • the anode 48 is provided on the upper surface of the hole transport layer 47 and is electrically connected to the first source and drain 435.
  • the first passivation layer 49 is provided on the upper surfaces of the first active layer 434, the first source and drain electrodes 435 and the cathode 44.
  • the photosensitive layer 46 includes a P-type silicon layer, an I-type layer, and an N-type silicon layer arranged in sequence.
  • the P-type silicon layer is formed by using a mixture of SiH4 and B2H6, the intrinsic layer is formed by using a mixture of SiH4 or SiH4 and H2, and the N-type silicon layer is formed by using a mixture of SiH4, PH3, and H2.
  • the P-type silicon layer, the I-type layer and the N-type silicon layer are respectively formed by printing, and the printing method is more precise and accurate.
  • the PIN photodiode is a photosensitive element. When it is exposed to light, the resistance will decrease, the current will increase, and the stronger the light intensity, the smaller the resistance.
  • the photosensitive element 10 can obtain the pattern of the fingerprint.
  • the first flat layer 50 is provided on the upper surface of the anode 48 and the first passivation layer 49.
  • the supporting pillars 51 are arranged at intervals on the upper surface of the first flat layer 50 and are connected to the pixel electrode 30.
  • the supporting pillars 51 are arranged in the gaps of the liquid crystal layer 3 to support the liquid crystal layer 3 to ensure uniform distribution of liquid crystal molecules in the liquid crystal layer 3.
  • the photosensitive element in the display substrate so that the photosensitive element is close to the side of the light source (light-incident surface), which will cause the distance between the photosensitive element and the fingerprint of the finger to be longer, resulting in reflected light.
  • the scattering of light is more serious, and it may be reflected by the opposite substrate to the photosensitive element, which may cause the light source received by the photosensitive element to be unclear, and seriously affect the touch performance of the display panel.
  • the photosensitive element is arranged in the opposite substrate on the light-emitting surface, which can shorten the distance between the photosensitive element and the fingerprint of the finger, reduce light scattering, and reduce light refraction caused by the structure of the opposite substrate. Makes the fingerprint recognition sensitivity of the display panel.
  • the first thin film transistor layer When the display panel is in operation, the first thin film transistor layer provides a driving voltage for the liquid crystal layer, so that the display panel achieves a display effect.
  • the thin film transistors in the first thin film transistor layer can drive touch control.
  • the electrodes work so that the display panel has a touch function; the thin film transistor in the second thin film transistor layer is equivalent to a control switch, which provides a driving current for the photosensitive element.
  • the detection light is emitted by the detection light source, passes through the display panel and irradiates the fingerprint of a user, and is emitted by the fingerprint to form reflected light; the photosensitive element acquires the reflected light and changes according to the intensity of the reflected light Identify the pattern of the user's fingerprint.
  • the display panel adopts two thin film transistor layers, the first thin film transistor layer mainly realizes display and touch functions, and the second thin film transistor layer realizes fingerprint recognition function, which can reduce display panel circuit failures and improve user experience.
  • the finger includes a ridge position A and a valley position B.
  • the detection light emitted by the backlight source 1 illuminates the finger through the display panel, and is reflected by the fingerprint back reflection light to the photodiode.
  • the photodiode converts the reflected light into a current signal, and outputs the current signal to the signal output line through the thin film transistor in the second thin film transistor layer that is turned on.
  • the signal output line outputs the current signal, and the current signal can be used to determine whether the position where the touch action occurs is the valley position or the ridge position.
  • the light intensity of the reflected light reflected by the ridge position A and the valley position B is different.
  • the photodiode produces The current signals are also different, so it can be judged by the difference of the current signals that the position where the touch action occurs is the ridge position A and the valley position B.
  • the pattern formed by the collection of ridge positions A is the fingerprint pattern of the user.
  • the working principle of identifying the user's identity First, the first grid is opened, a potential V1 is input to the P terminal of the photodiode, and then the first grid is closed. At this moment, the photodiode is in a reverse bias state. Second, when a finger presses on the surface of the display panel, the fingerprint at the ridge position A or the fingerprint at the valley position B will reflect the reflected light to the photodiode, and the photons will cause the potential of the reverse-polarized photodiode to decrease at a high potential. As the valley ridge light intensity is different, the degree of potential drop is different.
  • the photodiodes will output different current values due to different potential differences, which are then used to determine the position of the valley ridge and obtain the user's fingerprint pattern.
  • the photodiode feeds the acquired fingerprint pattern back to a data processing device (such as a mobile phone processor), which compares the user’s fingerprint pattern acquired in real time with the fingerprint pattern pre-entered in the database to determine the consistency of the feature points It can identify whether the user identity corresponding to the fingerprint is legal.
  • the display panel provided in this embodiment adopts the color film array process (COA) on the display substrate side, which can solve the difficulty of integrating In
  • COA color film array process
  • the problem of the Cell fingerprint sensor array increases the aperture ratio of the display panel; arranging the photosensitive element in the opposite substrate of the light-emitting surface can shorten the distance between the photosensitive element and the fingerprint of the finger, shorten the light stroke, and reduce the loss of reflected light from the fingerprint. So as to improve the fingerprint recognition sensitivity of the display panel, and realize the LCD display panel In The fingerprint recognition under the Cell screen can provide people with a better unlocking experience.
  • this example also provides a method for manufacturing a display panel, including the following steps S1 to S4.
  • a display substrate setting step is to set a display substrate.
  • S2 liquid crystal layer setting step coating liquid crystal molecules on the upper surface of the display substrate to form a liquid crystal layer.
  • an opposing substrate setting step is to provide an opposing substrate on the upper surface of the liquid crystal layer.
  • a backlight source is arranged under the display substrate.
  • the backlight source includes an illumination light source and a detection light source arranged at intervals, the illumination light source is used for emitting illumination light, and the detection light source is used for emitting detection light.
  • the display substrate setting step includes the following steps S11 to S19.
  • light-shielding patterns are prepared at intervals on the upper surface of the first substrate.
  • a buffer layer is prepared on the shading pattern and the upper surface of the second substrate.
  • the first thin film transistor layer preparation step a thin film transistor layer is prepared on the upper surface of the buffer layer.
  • the step of preparing the first thin film transistor layer includes the following steps S131 to S136.
  • P-Si, silicon oxide and other materials are deposited on the upper surface of the buffer layer to form a second active layer.
  • a third gate insulating layer is prepared on the upper surface of the first active layer.
  • a fourth gate is formed on the upper surface of the second gate insulating layer with a metal material.
  • the structure of the second gate may be a molybdenum aluminum molybdenum structure, but is not limited to other structures.
  • a fourth gate insulating layer is prepared on the upper surface of the second gate.
  • a dielectric layer is prepared on the upper surface of the fourth gate insulating layer.
  • the second source and drain preparation step, the dielectric layer and the fourth gate insulating layer are provided with a first through hole, the through hole penetrates the second active layer, and then a metal material is deposited to form a second Source and drain, so that the second source and drain are connected to the second active layer.
  • a touch electrode is prepared on the upper surface of the first thin film transistor layer.
  • the step of preparing the touch electrode and the step of preparing the second source and drain electrodes can deposit metal materials simultaneously to form the second source and drain electrodes and the touch electrode, which can improve The efficiency of the process and the reduction of the thickness of the display device.
  • the pixel definition layer preparation step is to prepare a pixel definition layer on the upper surface of the first thin film transistor layer and the touch electrode.
  • the pixel definition layer is divided into a plurality of color sub-pixel regions, and the color sub-pixels may include The red sub-pixel area, the green sub-pixel area, or the blue sub-pixel area.
  • S17 Common electrode preparation step, preparing a common electrode on the upper surface of the second flat layer, the second flat layer and the pixel defining layer are provided with second through holes, and the common electrode is electrically connected through the second through holes To the touch electrode.
  • a pixel electrode is prepared on the upper surface of the second passivation layer, a via hole penetrates the second passivation layer, the second flat layer and the pixel definition layer, and the via hole The position corresponds to the position of the second source and drain.
  • the step of setting the opposite substrate includes the following steps S31 to S36.
  • a black matrix pattern setting step is to set a black matrix pattern on the upper surface of the second substrate.
  • a second thin film transistor layer is prepared on the black matrix pattern and the upper surface of the first substrate.
  • the step of preparing the second thin film transistor layer includes the following steps S321 to S325.
  • a first gate insulating layer preparation step is to prepare a first gate insulating layer on the black matrix pattern and the upper surface of the first substrate.
  • a first gate preparation step is to prepare a first gate on the upper surface of the first gate insulating layer.
  • a second gate insulating layer is prepared on the upper surface of the first gate.
  • a first active layer is prepared on the upper surface of the second gate insulating layer.
  • the material of the first active layer is IGZO, but is not limited to other materials.
  • a first source and drain preparation step is to prepare a first source and drain on the upper surface of the first active layer.
  • a photosensitive element setting step is to dispose a photosensitive element on the upper surface of the second thin film transistor layer.
  • the photosensitive element setting step sequentially includes a cathode preparation step, a photosensitive device setting step, a hole transport layer preparation step, and an anode preparation step.
  • a cathode is prepared on the upper surface of the second thin film transistor layer.
  • an electron transport layer is prepared on the upper surface of the cathode.
  • a photosensitive device is arranged on the upper surface of the electron transport layer.
  • a hole transport layer is prepared on the upper surface of the photosensitive device.
  • anode preparation step an anode is prepared on the upper surface of the hole transport layer, and the anode is connected to the second source and drain.
  • a first passivation layer is prepared on the upper surface of the first active layer, the first source and drain electrodes, and the cathode.
  • a first flat layer is prepared on the upper surface of the thin film transistor layer and the cathode.
  • a support column is prepared on the upper surface of the first flat layer.
  • the display substrate preparation step and the counter substrate preparation step may be performed at the same time, so as to save process manufacturing time.
  • a liquid crystal layer is prepared on the upper surface of the display substrate, and then combined with the counter substrate to form a display panel, wherein the supporting column in the counter substrate is used to support the liquid crystal in the liquid crystal layer. Molecules to ensure uniform distribution of liquid crystal molecules in the liquid crystal layer.
  • the display panel and the preparation method thereof provided in this embodiment adopt the color film array process on the display substrate side, which can solve the problem of the difficulty of integrating the In Cell fingerprint sensor array in the liquid crystal display product, and increase the aperture ratio of the display panel;
  • the distance between the photosensitive element and the fingerprint of the finger can be shortened, the stroke of the light can be shortened, and the loss of reflected light from the fingerprint can be reduced, thereby improving the fingerprint recognition sensitivity of the display panel and realizing the liquid crystal display panel In Fingerprint recognition under the Cell screen.
  • This embodiment provides a display device including the display panel described above.
  • the display device can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, etc.
  • the display device can identify the user through a better fingerprint recognition effect, and can provide people with a better unlocking experience.

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Abstract

本揭示提供一种显示面板及显示装置，所述显示面板，包括显示基板、对置基板以及背光源；所述显示基板包括第一薄膜晶体管层、触控电极以及像素定义层；所述对置基板包括第二薄膜晶体管层以及感光元件；所述第二薄膜晶体管层，具有多个薄膜晶体管；所述感光元件连接至所述第二薄膜晶体管层下方；所述感光元件接收到一用户指纹的反射光以识别该用户身份。

Description

一种显示面板及显示装置 技术领域
本揭示涉及显示领域，尤其涉及一种显示面板及显示装置。
 背景技术
指纹识别作为生物识别方式在最近引起了广泛的关注，尤其在移动支付上更具有广阔的前景。人们也发明了很多指纹识别的方法，譬如光学、电容式、微波，温度及超声波等很多种方式。但是，各种方式都有其优点和缺点。比如传统的光学传感器方式无法实现轻薄，尤其是在高分辨率的要求下，传统设备体积庞大无法便携，因此很难集成到手机这样的设备中。其他的方式虽然解决轻薄的问题，但是无法实现大面积阵列，或无法结合其他功能，而且工艺复杂，成本高。
现有技术中，医疗使用非晶硅平板探测器即是一种传统光学传感器，包括非晶硅光电二极管与薄膜晶体管，其工作原理为：在非晶硅光电二极管的阳极，即P型层上加一个在-3~-9V之间的负电压，当光信号照射到非晶硅光电二极管上时，非晶硅光电二极管产生电子空穴对。在电场的作用下，空穴汇聚在阳极P型层，电子汇聚到阴极N型层。在薄膜晶体管关断时，信号不断积累，当薄膜晶体管打开时，电荷输出到数据线。依据检测到的电荷信号量的大小来判定光信号的强弱。
通常指纹传感器为光学指纹识别传感器，该指纹传感器需要独立的光路和电路支撑，对Array阵列制程工艺和显示基板开口率均有较大的影响。目前，指纹传感器通常为光学漫反射方式，在指纹识别过程中，光源照到手指后，光束由手指发生漫反射，手指指纹的波谷（以下称为谷）和波峰（以下称为脊）漫反射光能会有所差异，谷的光能相对于脊的光能低，由此差异来进行指纹识别。然而，手指指纹的谷和脊所漫反射的发散光的准直性差且光能量差异极小，同时在手指指纹的谷和脊之间还存在环境光的干扰，因此很难对指纹进行准确的识别。另外，指纹传感器在受到液晶两次光吸收的影响，其指纹识别的灵敏度大幅衰减。
 技术问题
本揭示的目的在于，提供一种显示面板及显示装置以解决现有技术中存在的指纹传感器影响阵列制程工艺、显示面板的开口率，且指纹识别的灵敏度较低技术问题。
 技术解决方案
本揭示提供一种显示面板，包括显示基板、对置基板以及背光源；所述对置基板与所述显示基板相对设置；所述背光源包括检测光源，设置于所述显示基板下方；其中，所述显示基板包括第一薄膜晶体管层、触控电极以及像素定义层；所述第一薄膜晶体管层具有多个薄膜晶体管；所述触控电极，设于所述第一薄膜晶体管层一侧的表面；所述像素定义层设于所述触控电极、所述第一薄膜晶体管层一侧的表面；所述像素定义层具有多个像素区，每一像素区对应设于一薄膜晶体管上方；所述对置基板包括第二薄膜晶体管层以及感光元件；所述第二薄膜晶体管层，具有多个薄膜晶体管；所述感光元件连接至所述第二薄膜晶体管层下方；所述感光元件接收到一用户指纹的反射光以识别该用户身份。
进一步地，所述感光元件包括阴极、电子传输层、感光层、空穴传输层以及阳极；所述阴极设于所述第二薄膜晶体管层一侧的表面；所述电子传输层设于所述阴极远离所述第二薄膜晶体管层一侧的表面；所述感光层设于所述电子传输层远离所述第二薄膜晶体管层一侧的表面；所述空穴传输层，设于所述感光层远离所述第二薄膜晶体管层一侧的表面；所述阳极设于所述空穴传输层远离所述第二薄膜晶体管层一侧的表面。
进一步地，所述第二薄膜晶体管层包括层叠设置的第一栅极绝缘层、第一栅极、第二栅极绝缘层、第一有源层以及第一源漏极。
进一步地，所述对置基板还包括第一基底、黑矩阵图案以及第一钝化层；所述黑矩阵图案设于所述第一基底一侧的表面；所述第一钝化层设于所述第二薄膜晶体管层远离所述第一基底一侧的表面；所述第一平坦层设于所述感光元件、所述第一钝化层远离所述第一基底一侧的表面；其中，所述第二薄膜晶体管层设于所述黑矩阵图案、所述第一基底一侧的表面。
进一步地，当用户的触摸所述显示面板时，所述检测光由所述检测光源发出，穿过所述显示面板照射到一用户的指纹上，被所述指纹发射形成反射光；所述感光元件获取所述反射光，根据所述反射光的强弱变化识别出该用户指纹的图案。
进一步地，所述显示面板还包括液晶层，设于所述显示基板与所述对置基板之间；其中，所述第一薄膜晶体管层为所述液晶层提供驱动电压；所述第二薄膜晶体管层为所述感光元件提供驱动电流。
进一步地，所述显示基板还包括第二平坦层、公共电极、第二钝化层、过孔以及像素电极，所述第二平坦层设于所述像素定义层远离所述第一薄膜晶体管层一侧的表面；所述公共电极设于所述第二平坦层远离所述第一薄膜晶体管层一侧的表面，连接至所述触控电极；所述第二钝化层设于所述公共电极、所述第二平坦层远离所述第一薄膜晶体管层一侧的表面；所述过孔贯穿所述第二钝化层、所述第二平坦层及所述像素定义层，所述过孔的位置与所述第二源漏极的位置对应；所述像素电极填充所述过孔，连接至所述第二源漏极。
进一步地，所述第一薄膜晶体管层包括层叠设置的第二有源层、第三栅极绝缘层、第三栅极、第三栅极绝缘层、介电层以及第二源漏极。
进一步地，所述显示基板还包括第二基底、遮光图案以及缓冲层；所述遮光图案设于所述第二基底一侧的表面；所述缓冲层设于所述遮光图案以及所述第二基底一侧的表面；其中，所述第一薄膜晶体管层设于所述缓冲层远离所述第二基底一侧的表面。
为实现上述目的，本揭示还提供一种显示装置，包括前文所述的显示面板。
 有益效果
本揭示的技术效果在于，提供一种显示面板及显示装置，在显示基板侧采用彩膜阵列工艺，可以解决液晶显示产品中难以集成In Cell指纹传感阵列的问题，增加显示面板的开口率；将感光元件设于出光面的对置基板中，可以缩短感光元件与手指指纹的距离，缩短光线的行程，减少指纹反射光的损失，从而提升显示面板的指纹识别灵敏度，实现液晶显示面板In Cell屏下的指纹识别，能为人们提供更好的解锁体验。
 附图说明
为了更清楚地说明本揭示实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本揭示的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本实施例所述显示面板的结构示意图；
图2为本实施例所述显示基板的结构示意图；
图3为本实施例所述对置基板的结构示意图；
图4为本实施例所述显示面板的流程图；
图5为本实施例所述显示基板设置步骤的流程图；
图6为本实施例所述第一薄膜晶体管层制备步骤的流程图；
图7为本实施例所述对置基板设置步骤的流程图；
图8为本实施例所述第二薄膜晶体管层制备步骤的流程图。
1背光源；2显示基板；3液晶层；4对置基板；10感光元件；20过孔；
21第二基底；22遮光图案；23缓冲层；24第一薄膜晶体管层；25触控电极；
26像素定义层；27第二平坦层；28公共电极；29第二钝化层；30像素电极；
41第一基底；42黑矩阵图案；43第二薄膜晶体管层；44阴极；
45电子传输层；46感光层；47空穴传输层；48阳极；
49第一钝化层；50第一平坦层；51支撑柱；
241第二有源层； 242第二栅极绝缘层；243第二栅极；
244第三栅极绝缘层； 245介电层；246第二源漏极；
431第一栅极绝缘层；432第一栅极；433第二栅极绝缘层；
434第一有源层；435第一源漏极。
本揭示的实施方式
以下参考说明书附图介绍本揭示的优选实施例，用以举例证明本揭示可以实施，这些实施例可以向本领域中的技术人员完整介绍本揭示的技术内容，使得本揭示的技术内容更加清楚和便于理解。然而本揭示可以通过许多不同形式的实施例来得以体现，本揭示的保护范围并非仅限于文中提到的实施例。
本实施例提供一种显示面板，该显示面板通过显示基板与对置基板实现光学式指纹识别，显示基板为彩膜阵列基板（color filter on array，简称：COA），采用彩膜阵列的工艺，能够增加显示基板的开口率；以及在对置基板设置感光元件，能准确识别指纹的谷和指纹的脊的准直性和光能量差异，具有较准确的指纹识别效果，还能够实现触控功能。
如图1所示，所述显示面板包括背光源1、显示基板2、液晶层3以及对置基板4。其中，背光源1设于显示基板2下方，液晶层3设于显示基板2与对置基板4之间，以实现指纹识别及触控功能。
背光源1可以包括间隔设置的照射光源和检测光源，所述照射光源用于发出照射光，所述检测光源用于发出检测光。图1中，实线箭头所示为照射光，虚线所示为检测光。优选地，照射光源为白光LED，照射光可以为白光；检测光源为红外LED，检测光可以为红外光。
如图2所示，显示基板2包括第二基底21、遮光图案22、缓冲层23、第一薄膜晶体管层24、触控电极25、像素定义层26、第二平坦层27、公共电极28、第二钝化层29以及像素电极30。
第二基底21为PI基板，具有良好的柔韧性。遮光图案22间隔设置于第二基底21上表面，具有良好的遮光效果。缓冲层23设于第二基底21以及遮光图案22的上表面。
第一薄膜晶体管层24包括第二有源层241、第三栅极绝缘层242、第二栅极243、第四栅极绝缘层244、介电层245以及第二源漏极246。第二有源层241、第三栅极绝缘层242依次设于缓冲层23的上表面，第二有源层241包括P型硅材料以及N型硅材料。第一栅极243设于第三栅极绝缘层242的上表面，与第二有源层241相对设置。介电层245、第四栅极绝缘层244依次设于第一栅极243的上表面。第二源漏极246设于介电层245的上表面，且连接至第二有源层241的两端。介电层245与第四栅极绝缘层244设有第一通孔，第二源漏极246填充所述第一通孔，连接至第二有源层241。
触控电极25包括多条触控信号线，与第二源漏极246同层设置。触控电极25与第二源漏极246采用相同的材料、且在同一掩膜工艺中形成。
像素定义层26设于触控电极25、第一薄膜晶体管层24上表面。像素定义层26具有多个像素区，每一像素区对应设于一薄膜晶体管上方。像素定义层26包括依次排列的多个彩色子像素区，例如该彩色子像素可包括红色子像素区、绿色子像素区或者蓝色子像素区。应该理解的是，所述薄膜晶体管相当一个驱动开关，控制像素定义层26中的子像素发光，实现COA阵列，增加显示面板的开口率。
第二平坦层27设于像素定义层26的上表面。公共电极28设于第二平坦层27的上表面，第二平坦层27及像素定义层26设有第二通孔，公共电极28通过所述第二通孔电连接至触控电极25。第二钝化层29设于公共电极28及第二平坦层27上表面，第二钝化层29的材质包括但不限于氧化硅、氮化硅，具有良好的绝缘效果。过孔20贯穿第二钝化层29、第二平坦层27及像素定义层26，过孔20的位置与第二源漏极246的位置对应。像素电极30填充过孔20，与第二源漏极246实现电连接，像素电极30的材料包括但不限于ITO。
显示基板为彩膜阵列基板（color filter on array，简称：COA），采用彩膜阵列的工艺，能够增加显示面板的开口率。
如3图所示，对置基板4包括第一基底41、黑矩阵图案42、第二薄膜晶体管层43、感光元件10、第一钝化层49、第一平坦层50以及支撑柱51。其中，感光元件10包括阴极44、电子传输层45、感光层46、空穴传输层47以及阳极48。
黑矩阵图案42间隔设置于第一基底41的上表面，且与遮光图案22相对设置，可以获得更好的遮光效果。遮光图案22遮挡照射光透射至感光元件10，检测光能够透过遮光图案22照射到指纹上。黑矩阵图案42 可以允许检测光通过，阻止照射光通过，从而使得显示面板具有良好的显示效果，以及提高显示面板的触控灵敏度。
第二薄膜晶体管层43设于黑矩阵图案42以及第一基底41的上表面。第二薄膜晶体管层43包括多个薄膜晶体管，每个薄膜晶体管包括第一栅极绝缘层431、第一栅极432、第二栅极绝缘层433、第一有源层434以及第一源漏极435。
第一栅极绝缘层431设于黑矩阵图案42的上表面，第一栅极432设于第一栅极绝缘层431的上表面，第二栅极绝缘层433设于第一栅极432的上表面。第一有源层434设于第二栅极绝缘层433的上表面，且与第一栅极432相对设置，第一有源层434的材质包括但不限于IGZO。第一源漏极435设于第一有源层434的两端。
感光元件10为光敏二极管，该光敏二极管为PIN型光电二极管，所述PIN型光电二极管也称PIN结二极管、PIN二极管。光敏器件的尺寸是微米级别的，单个光敏器件比手指的谷和脊的尺寸还要小，具有渡越时间短、灵敏度高等特点。
感光元件10从上之下依次包括阴极44、电子传输层45、感光层46、空穴传输层47以及阳极48。阴极44设于第二薄膜晶体管层43的上表面。具体地，阴极44设于第二栅极绝缘层433的上表面，与第一有源层434同层设置。电子传输层45、感光层46、空穴传输层47依次设于阴极44的上表面。阳极48设于空穴传输层47的上表面，电连接至第一源漏极435。第一钝化层49设于第一有源层434、第一源漏极435以及阴极44的上表面。
优选地，感光层46包括依次设置的P型硅层、I型层和N型硅层。其中，P型硅层采用SiH4、B2H6混合形成，本征层采用SiH4形成或采用SiH4、H2混合形成，N型硅层采用SiH4、PH3、H2混合形成。在制备过程中，其中的P型硅层、I型层和N型硅层分别采用打印方式形成，采用打印方式成图更精确且准确。PIN光敏二极管作为一个光敏元件，当其受到光照时，电阻会减小，电流会增大，并且光照强度越强，电阻就越小，以此原理进行指纹的谷和脊光照强度的判别，光照强度大的反射光对应位置是指纹的脊，光照强度小的反射光对应的位置是指纹的谷，由此，感光元件10可以获取指纹的图案。
第一平坦层50设于阳极48、第一钝化层49的上表面。支撑柱51间隔设置于第一平坦层50的上表面，连接至像素电极30。本实施例中，支撑柱51设于液晶层3的间隙，用以支撑液晶层3，确保液晶层3中的液晶分子均匀分布。
现有技术中，本领域的技术人员将感光元件设置显示基板中，使得感光元件靠近光源的一侧（入光面），这样会使得感光元件与手指指纹之间的距离较远，导致反射光的散射较严重，且有可能被对置基板反射到感光元件上，从而导致感光元件接收的光来源不清晰，严重影响显示面板的触控性能。然而，本实施例提供的所述显示面板，将感光元件设于出光面的对置基板中，可以缩短感光元件与手指指纹的距离，降低光的散射，减少对置基板的结构发生光折射，使得显示面板的指纹识别灵敏度。
所述显示面板在工作中，所述第一薄膜晶体管层为所述液晶层提供驱动电压，从而使得显示面板实现显示的效果，另外，所述第一薄膜晶体管层中的薄膜晶体管可以驱动触控电极工作，使得显示面板具有触控功能；所述第二薄膜晶体管层中的薄膜晶体管相当于一个控制开关，为所述感光元件提供驱动电流，当用户的触摸所述显示面板时，所述检测光由所述检测光源发出，穿过所述显示面板照射到一用户的指纹上，被所述指纹发射形成反射光；所述感光元件获取所述反射光，根据所述反射光的强弱变化识别出该用户指纹的图案。所述显示面板通过采用两层薄膜晶体管层，第一薄膜晶体管层主要实现显示及触控功能，第二薄膜晶体管层实现指纹识别功能，可以减少显示面板电路故障，提高用户体验。
如图1所示，手指包括脊位置A和谷位置B，当手指发生触摸动作时，背光源1发出的检测光透过显示面板照射到手指上，被手指指纹返回反射光反射到光敏二极管。光敏二极管将反射光转换为电流信号，并通过开启的第二薄膜晶体管层中的薄膜晶体管将电流信号输出至信号输出线。信号输出线将该电流信号输出，该电流信号可用于判断出发生触摸动作的位置为谷位置或者脊位置。由于，手指的脊位置A和谷位置B之间存在差异，因此脊位置A和谷位置B反射的反射光的光强是不同的，不同光强的反射光照射到光敏二极管时，光敏二极管产生的电流信号也是不同的，所以可通过电流信号的差异判断出发生触摸动作的位置为脊位置A和谷位置B。脊位置A的集合形成的图案即为该用户的指纹图案。
识别用户身份的工作原理：第一，第一栅极打开，给光敏二极管P端输入一个电位V1，然后关闭第一栅极，此刻光敏二极管处于反偏状态。第二，当手指按压在所述显示面板的表面时，脊位置A的指纹或谷位置B的指纹会将反射光反射至光敏二极管处，光子会引起反偏光敏二极管的高电位处电位降低，由于谷脊光强不同，则电位降低的程度不同。第三，当第一栅极再次打开，由于不同电位差，光敏二极管会输出不同电流值，进而用于判断谷脊位置，获取用户的指纹图案。最后，光敏二极管将获取的指纹图案反馈至一数据处理设备（如手机处理器），所述数据处理设备将实时获取的用户的指纹图案与数据库中预先录入的指纹图案对比，判断特征点的一致性，从而识别出该指纹对应的用户身份是否合法。
本实施例提供的显示面板，在显示基板侧采用彩膜阵列工艺（COA），可以解决液晶显示产品中难以集成In Cell指纹传感阵列的问题，增加显示面板的开口率；将感光元件设于出光面的对置基板中，可以缩短感光元件与手指指纹的距离，缩短光线的行程，减少指纹反射光的损失，从而提升显示面板的指纹识别灵敏度，实现液晶显示面板In Cell屏下的指纹识别，能为人们提供更好的解锁体验。
如图4所示，本实例还提供一种显示面板的制备方法，包括如下步骤S1~S4。S1显示基板设置步骤，设置一显示基板。S2液晶层设置步骤，在所述显示基板上表面涂覆液晶分子材料形成一液晶层。S3对置基板设置步骤，在所述液晶层上表面设置一对置基板。S4背光源设置步骤，在所述显示基板下方设置背光源。所述背光源包括间隔设置的照射光源和检测光源，所述照射光源用于发出照射光，所述检测光源用于发出检测光。
如图5所示，所述显示基板设置步骤包括如下步骤S11~S19。
S11遮光图案制备步骤，在第一基底上表面间隔制备遮光图案。
S12缓冲层制备步骤，在所述遮光图案以及所述第二基底上表面制备一缓冲层。
S13第一薄膜晶体管层制备步骤，在所述缓冲层上表面制备一薄膜晶体管层。如图6所示，所述第一薄膜晶体管层制备步骤包括如下步骤S131~S136。S131第一有源层制备步骤，在所述缓冲层上表面沉积P-Si、硅氧化物等材料形成一第二有源层。S132第二栅极绝缘层制备步骤，在所述第一有源层上表面制备一第三栅极绝缘层。S133第二栅极制备步骤，在所述第二栅极绝缘层上表面金属材料形成一第四栅极，所述第二栅极的结构可以钼铝钼结构，但不限于其他结构。S134第二栅极绝缘层制备步骤，在所述第二栅极上表面制备一第四栅极绝缘层。S135介电层制备步骤，在所述第四栅极绝缘层上表面制备一介电层。S136第二源漏极制备步骤，在所述介电层、第四栅极绝缘层设有第一通孔，该过孔贯穿至所述第二有源层，然后沉积金属材料形成一第二源漏极，从而使得所述第二源漏极连接至所述第二有源层。
S14触控电极制备步骤，在所述第一薄膜晶体管层上表面制备一触控电极。
需要说明的是，本实施例中，所述触控电极制备步骤与所述第二源漏极制备步骤可以同步沉积金属材料，分别形成所述第二源漏极和触控电极，这样可以提高工艺制作的效率以及减少显示装置的厚度。
S15像素定义层制备步骤，在所述第一薄膜晶体管层、所述触控电极上表面制备一像素定义层，所述像素定义层被分为多个彩色子像素区，该彩色子像素可包括红色子像素区、绿色子像素区或者蓝色子像素区。
S16第二平坦层制备步骤，在所述像素定义层上表面制备一第二平坦层。
S17公共电极制备步骤，在所述第二平坦层上表面制备一公共电极，所述第二平坦层及像素定义层设有第二通孔，所述公共电极通过所述第二通孔电连接至所述触控电极。
S18第二钝化层制备步骤，在所述公共电极上表面制备一第二钝化层。
S19像素电极制备步骤，在所述第二钝化层上表面制备一像素电极，一过孔贯穿所述第二钝化层、所述第二平坦层及所述像素定义层，所述过孔的位置与所述第二源漏极的位置对应。
如图7所示，所述对置基板设置步骤包括如下步骤S31~S36。
S31黑矩阵图案设置步骤，在第二基底上表面设置黑矩阵图案。
S32第二薄膜晶体管层制备步骤，所述黑矩阵图案以及所述第一基底上表面制备第二薄膜晶体管层。如图8所示，所述第二薄膜晶体管层制备步骤包括如下步骤S321~ S325。S321第一栅极绝缘层制备步骤，在所述黑矩阵图案、所述第一基底上表面制备第一栅极绝缘层。S322第一栅极制备步骤，在所述第一栅极绝缘层上表面制备一第一栅极。S323第二栅极绝缘层制备步骤，在所述第一栅极上表面制备一第二栅极绝缘层。S324第一有源层制备步骤，在所述第二栅极绝缘层上表面制备一第一有源层，所述第一有源层的材质为IGZO，但不限于其他材质。S325第一源漏极制备步骤，在所述第一有源层上表面制备一第一源漏极。
S33感光元件设置步骤，在所述第二薄膜晶体管层上表面设置一感光元件。所述感光元件设置步骤依次包括阴极制备步骤、光敏器件设置步骤、空穴传输层制备步骤以及阳极制备步骤。在所述阴极制备步骤中，在所述第二薄膜晶体管层上表面制备一阴极。在所述电子传输层制备步骤中，在所述阴极上表面制备一电子传输层。在所述感光层制备步骤中，在所述电子传输层上表面设置一光敏器件。在所述空穴传输层制备步骤中，在所述光敏器件上表面制备一空穴传输层。在所述阳极制备步骤中，在所述空穴传输层上表面制备一阳极，所述阳极连接至所述第二源漏极。
S34第一钝化层制备步骤，在所述第一有源层、所述第一源漏极以及所述阴极的上表面制备一第一钝化层。
S35第一平坦层制备步骤，在所述薄膜晶体管层以及所述阴极上表面制备一第一平坦层。
S36支撑柱制备步骤，在所述第一平坦层上表面制备支撑柱。
本实施例提供的显示面板制备方法的技术方案中，所述显示基板制备步骤与所述对置基板制备步骤可以同时进行，以节省工艺的制作时间。另外，在所述显示基板上表面制备液晶层，然后与所述对置基板进行对组贴合，形成一显示面板，其中所述对置基板中的支撑柱，用以支撑液晶层中的液晶分子，从而确保液晶层中的液晶分子均匀分布。
本实施例提供的显示面板及其制备方法，在显示基板侧采用彩膜阵列工艺，可以解决液晶显示产品中由于难以集成In Cell指纹传感阵列问题，增加显示面板的开口率；将感光元件设于出光面的对置基板中，可以缩短感光元件与手指指纹的距离，缩短光线的行程，减少指纹反射光的损失，从而提升显示面板的指纹识别灵敏度，实现液晶显示面板In Cell屏下的指纹识别。
本实施例提供一种显示装置，包括前文所述的显示面板。该显示装置可以为：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置通过更佳的指纹识别效果，以识别该用户身份，能为人们提供更好的解锁体验。
以上所述仅是本揭示的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种显示面板，其包括：
    显示基板；
    对置基板，与所述显示基板相对设置；以及
    背光源，包括检测光源，设置于所述显示基板下方；
    其中，所述显示基板包括
    第一薄膜晶体管层，具有多个薄膜晶体管；
    触控电极，设于所述第一薄膜晶体管层一侧的表面；以及
    像素定义层，设于所述触控电极、所述第一薄膜晶体管层一侧的表面；所述像素定义层具有多个像素区，每一像素区对应设于一薄膜晶体管上方；
    所述对置基板包括
    第二薄膜晶体管层，具有多个薄膜晶体管；以及
    感光元件，连接至所述第二薄膜晶体管层下方；
    所述感光元件接收到一用户指纹的反射光以识别该用户身份。
  2. 如权利要求1所述的显示面板，其中，
    所述感光元件包括
    阴极，设于所述第二薄膜晶体管层一侧的表面；
    电子传输层，设于所述阴极远离所述第二薄膜晶体管层一侧的表面；
    感光层，设于所述电子传输层远离所述第二薄膜晶体管层一侧的表面；
    空穴传输层，设于所述感光层远离所述第二薄膜晶体管层一侧的表面；以及
    阳极，设于所述空穴传输层远离所述第二薄膜晶体管层一侧的表面。
  3. 如权利要求1所述的显示面板，其中，
    所述第二薄膜晶体管层包括层叠设置的第一栅极绝缘层、第一栅极、第二栅极绝缘层、第一有源层以及第一源漏极；
    其中，所述感光元件中的所述感光层通过所述空穴传输层与所述阳极的一侧连接，所述第一源漏极连接至所述阳极的另一侧；
    所述感光元件中的所述感光层通过所述电子传输层与所述阴极连接。
  4. 如权利要求1所述的显示面板，其中，所述对置基板还包括
    第一基底；
    黑矩阵图案，设于所述第一基底一侧的表面；
    第一钝化层，设于所述第二薄膜晶体管层远离所述第一基底一侧的表面；以及
    第一平坦层，设于所述感光元件、所述第一钝化层远离所述第一基底一侧的表面；
    其中，所述第二薄膜晶体管层设于所述黑矩阵图案、所述第一基底一侧的表面。
  5. 如权利要求1所述的显示面板，其中，
    当用户的触摸所述显示面板时，
    所述检测光由所述检测光源发出，穿过所述显示面板照射到一用户的指纹上，被所述指纹发射形成反射光；
    所述感光元件获取所述反射光，根据所述反射光的强弱变化识别出该用户指纹的图案。
  6. 如权利要求1所述的显示面板，其中，所述显示面板还包括
    液晶层，设于所述显示基板与所述对置基板之间；
    其中，所述第一薄膜晶体管层为所述液晶层提供驱动电压；
    所述第二薄膜晶体管层为所述感光元件提供驱动电流。
  7. 如权利要求1所述的显示面板，其中，所述显示基板还包括
    第二平坦层，设于所述像素定义层远离所述第一薄膜晶体管层一侧的表面；
    公共电极，设于所述第二平坦层远离所述第一薄膜晶体管层一侧的表面，连接至所述触控电极；以及
    第二钝化层，设于所述公共电极、所述第二平坦层远离所述第一薄膜晶体管层一侧的表面；
    过孔，贯穿所述第二钝化层、所述第二平坦层及所述像素定义层，所述过孔的位置与所述第二源漏极的位置对应；
    像素电极，填充所述过孔，连接至所述第二源漏极。
  8. 如权利要求1所述的显示面板，其中，
    所述第一薄膜晶体管层包括层叠设置的第二有源层、第三栅极绝缘层、第三栅极、第三栅极绝缘层、介电层以及第二源漏极。
  9. 如权利要求1所述的显示面板，其中，所述显示基板还包括
    第二基底；
    遮光图案，设于所述第二基底一侧的表面；以及
    缓冲层，设于所述遮光图案以及所述第二基底一侧的表面；
    其中，所述第一薄膜晶体管层设于所述缓冲层远离所述第二基底一侧的表面。
  10. 一种显示装置，其包括如权利要求1所述的显示面板。
PCT/CN2019/116128 2019-09-05 2019-11-07 一种显示面板及显示装置 WO2021042501A1 (zh)

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