WO2023103794A1 - Wafer holding device and rotating shaft thereof - Google Patents

Wafer holding device and rotating shaft thereof Download PDF

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Publication number
WO2023103794A1
WO2023103794A1 PCT/CN2022/133993 CN2022133993W WO2023103794A1 WO 2023103794 A1 WO2023103794 A1 WO 2023103794A1 CN 2022133993 W CN2022133993 W CN 2022133993W WO 2023103794 A1 WO2023103794 A1 WO 2023103794A1
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WO
WIPO (PCT)
Prior art keywords
rotating shaft
gas
gas distribution
ring
distribution ring
Prior art date
Application number
PCT/CN2022/133993
Other languages
French (fr)
Chinese (zh)
Inventor
庞昊
陶晓峰
韩阳
陆寅霄
贾社娜
王晖
Original Assignee
盛美半导体设备(上海)股份有限公司
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Publication of WO2023103794A1 publication Critical patent/WO2023103794A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16JPISTONS; CYLINDERS; SEALINGS
    • F16J15/00Sealings
    • F16J15/16Sealings between relatively-moving surfaces
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16JPISTONS; CYLINDERS; SEALINGS
    • F16J15/00Sealings
    • F16J15/44Free-space packings
    • F16J15/447Labyrinth packings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, and more particularly, to a wafer holding device and a rotating shaft thereof.
  • Wafer backside cleaning is an important process in the wafer wet process. By cleaning the back of the wafer, cross-contamination can be avoided and the yield rate can be improved. In the backside cleaning process, Bernoulli chucks have been widely used.
  • the Bernoulli chuck includes a chuck 30 and a rotating shaft 40 .
  • the outer coaxial sleeve of the rotating shaft 40 is provided with a Bernoulli gas distribution ring 41 and a lifting gas distribution ring 42 .
  • the gas supply pipeline 411 of the Bernoulli gas distribution ring 41 communicates with the Bernoulli gas outlet pipeline 31 on the chuck 30 through the first in-axis air channel 43 of the rotating shaft 40, and is used for feeding the wafer w when the wafer w is cleaned. Gas is supplied to the lower surface to suspend the wafer w above the chuck 30 and prevent the cleaning liquid from flowing to the lower surface of the wafer w, causing the front side of the wafer w to be etched.
  • the air supply pipe 421 of the lifting gas distribution ring 42 is connected with the lifting air outlet pipe 32 on the chuck 30 through the second in-axis air channel 44 of the rotating shaft 40, and is used to supply the lower surface of the wafer w when picking and placing the wafer w.
  • the gas is used to adjust the distance between the wafer w and the upper surface of the chuck 30 .
  • the rotating shaft 40 drives the chuck 30 to rotate, while the Bernoulli gas distribution ring 41 and the lifting gas distribution ring 42 are stationary, usually between the rotating shaft 40 and the gas distribution rings (41, 42)
  • a labyrinth seal is used to prevent gas from leaking from the gap between the rotating shaft 40 and the gas distribution rings (41, 42). It should be noted that the labyrinth seal only reduces the amount of leakage, not eliminates it. The gas can still leak from the upper or lower ends of the gas distribution rings (41, 42) along the surface of the rotating shaft 40.
  • the gas leakage of the gas distribution rings (41, 42) will cause insufficient gas supply to the lower surface of the wafer w, which will affect the stability of the Bernoulli chuck from the following two directions: 1) When picking and placing the wafer w, The gas leakage from the lifting gas distribution ring 42 leads to insufficient gas flow from the lifting outlet pipe 32, which makes the floating height of the wafer w unable to meet the height requirements for picking and placing the wafer; 2) when cleaning the wafer w, the Bernoulli matching Gas leakage from the gas ring 41 results in insufficient gas flow from the Bernoulli gas outlet pipe 31 , causing the cleaning liquid to easily flow to the lower surface of the wafer w, which in turn causes the edge and front side of the wafer w to be etched, which cannot meet the process requirements.
  • the purpose of the present invention is to provide a wafer holding device and its rotating shaft, which are used to solve the problem that the sealing effect of the rotating shaft is insufficient and affects the stability of the process.
  • the present invention provides a rotating shaft for connecting with a chuck holding a wafer, including:
  • a central rotating shaft, the central rotating shaft is provided with an air intake pipe inside;
  • At least one first gas distribution ring the at least one first gas distribution ring is coaxially sleeved on the outside of the central shaft, and there is a gap between the at least one first gas distribution ring and the central shaft, the at least one first gas distribution ring
  • a gas distribution ring is provided with a gas supply pipe inside, and the gas supply pipe of the at least one first gas distribution ring communicates with the air intake pipe of the central rotating shaft, and is used to supply gas to the rotating central rotating shaft;
  • At least one dynamic sealing ring the at least one dynamic sealing ring is coaxially fixed on the outside of the central rotating shaft, and the at least one dynamic sealing ring is alternately arranged with the at least one first gas distribution ring, and the dynamic sealing ring and the first distribution ring are arranged alternately.
  • There are several inner grooves on the opposite end face of the gas ring the inner grooves are used to accommodate the leaked gas from the gap between the first gas distribution ring and the central rotating shaft, and the leaked gas is made into the inner grooves when the central rotating shaft rotates.
  • a first high-pressure sealing area is formed inside to prevent gas leakage of the first gas distribution ring, wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring and the central rotating shaft.
  • a wafer holding device comprising:
  • a chuck the chuck is used to hold the wafer, and the inside of the chuck is provided with an air outlet pipe;
  • the chuck is fixed on the top of the rotating shaft;
  • the air outlet pipe inside the chuck communicates with the air inlet pipe inside the rotating shaft.
  • the rotating shaft provided by the present invention is configured with the first gas distribution ring and the dynamic sealing ring arranged adjacently, and an inner groove is provided on the end surface of the dynamic sealing ring opposite to the first gas distribution ring.
  • the wafer holding device proposed by the present invention adopts a rotating shaft equipped with a dynamic sealing ring, so that the gas output of the gas outlet pipeline in the chuck can meet the process requirements, thereby effectively improving the stability of the process.
  • Fig. 1 is a cross-sectional view of a rotating shaft provided by Embodiment 1 of the present invention
  • Figure 2 is a partially enlarged view of Figure 1;
  • Fig. 3 is a perspective view of a dynamic sealing ring provided by Embodiment 1 of the present invention.
  • Figure 4 is a top view of the dynamic sealing ring
  • Figure 5 is a cross-sectional view of the dynamic sealing ring
  • Fig. 6 is a cross-sectional view of the rotating shaft provided by Embodiment 2 of the present invention.
  • Figure 7 is a partially enlarged view of Figure 6;
  • Fig. 8 is a perspective view of a dynamic sealing ring provided by Embodiment 2 of the present invention.
  • Fig. 9 is another perspective view of the dynamic sealing ring provided by Embodiment 2 of the present invention.
  • Fig. 10 is a cross-sectional view of the rotating shaft provided by Embodiment 3 of the present invention.
  • Figure 11 is a partially enlarged view of Figure 10;
  • Fig. 12 is a perspective view of the dynamic sealing ring provided by Embodiment 3 of the present invention.
  • Figure 13 is a top view of Figure 12;
  • FIG. 14 is a cross-sectional view of a wafer holding device provided in Embodiment 4 of the present invention.
  • Fig. 15 is a schematic diagram of a Bernoulli chuck in the prior art.
  • the rotating shaft includes a central rotating shaft 110 , at least one first gas distribution ring 120 and at least one dynamic sealing ring 130 .
  • An air intake duct 111 is arranged inside the central rotating shaft 110 , the air inlet of the air intake duct 111 is located on the outer wall of the central rotating shaft 110 , and the air outlet of the air intake duct 111 is located on the top of the central rotating shaft 110 .
  • the first gas distribution ring 120 is coaxially sleeved on the outside of the central rotating shaft 110 for supplying gas to the rotating central rotating shaft 110 .
  • the inside of the first gas distribution ring 120 is provided with an air supply pipe 121, the air inlet of the air supply pipe 121 is located on the outer wall of the first gas distribution ring 120, and the gas outlet of the air supply pipe 121 is located on the inside of the first gas distribution ring 120
  • the wall, specifically, the air outlet of the air supply pipe 121 is an annular air outlet groove.
  • the gas outlet of the gas supply pipeline 121 communicates with the gas inlet of the gas inlet pipeline 111 , and the first gas distribution ring 120 provides gas, such as nitrogen, for the central shaft 110 through the gas supply pipeline 121 and the gas inlet pipeline 111 .
  • the number of intake pipes 111 can be multiple, the number of air supply pipes 121 corresponds to the number of air intake pipes 111 one by one, and each air supply pipe 121 provides gas for one air intake pipe 111 .
  • a plurality of gas supply pipes 121 can be arranged in a first gas distribution ring 120 to respectively provide gas for a plurality of air intake pipes 111 in the central rotating shaft 110; a first gas distribution ring 120 can also be provided with a
  • the air pipes 121 provide air to the air intake pipes 111 in the central rotating shaft 110 through the multiple first gas distribution rings 120 .
  • the numbers of the intake pipe 111, the first gas distribution ring 120 and the air supply pipe 121 can be adjusted according to the actual situation.
  • two first gas distribution rings 120 respectively provide gas to two intake pipes 111 in the central rotating shaft 110 .
  • the two intake ducts 111 in the central rotating shaft 110 are respectively a first intake duct 111a and a second intake duct 111b.
  • the two first gas distribution rings 120 are disposed up and down along the axial direction of the central rotating shaft 110 , and are respectively denoted as the upper first gas distribution ring 120 a and the lower first gas distribution ring 120 b.
  • Each of the two first gas distribution rings (120a, 120b) is provided with an air supply pipe 121, which communicates with the first air intake pipe 111a and the second air intake pipe 111b respectively.
  • the dynamic sealing ring 130 is coaxially fixed on the outside of the central rotating shaft 110 , and when the central rotating shaft 110 rotates, the dynamic sealing ring 130 can rotate synchronously with the central rotating shaft 110 .
  • the dynamic sealing rings 130 and the first gas distribution rings 120 are alternately arranged on the outside of the central rotating shaft 110 .
  • a dynamic sealing ring 130 is provided on at least one side of the first gas distribution ring 120 along its axial direction. For example, in FIG. 1 , a dynamic sealing ring 130 is disposed below the upper first gas distribution ring 120 a, and a dynamic sealing ring 130 is disposed above the lower first gas distribution ring 120 b.
  • a dynamic sealing ring 130 may be provided on the upper and lower sides of the first gas distribution ring 120 .
  • a dynamic sealing ring can be shared between two adjacent first gas distribution rings. As shown in FIG. between. The position and quantity of the dynamic sealing ring 130 relative to the first gas distribution ring 120 can be adjusted according to the specific requirements of the process.
  • the first gas distribution ring 120 is a stationary part, and the central rotating shaft 110 is a moving part. In order to ensure that the central rotating shaft 110 can rotate freely under the drive of the driving mechanism (not shown), there is a gap between the first gas distribution ring 120 and the central rotating shaft 110. gap.
  • labyrinth seal grooves 122 are arranged on the upper and lower sides of the gas outlet of the gas supply pipe 121 of the first gas distribution ring 120. When the first gas distribution ring 120 supplies gas, the labyrinth seal grooves 122 can prevent part of the gas from moving along the first gas distribution ring 120. A gap between a gas distribution ring 120 and the central shaft 110 leaks.
  • the dynamic sealing ring 130 and the central rotating shaft 110 are arranged separately. As shown in FIG. 1 and FIG. A sealing ring 20 is provided between the dynamic sealing ring 130 and the central rotating shaft 110 , and the sealing ring 20 can prevent the gas leaked from the first gas distribution ring 120 from continuing to diffuse along the axial direction of the central rotating shaft 110 .
  • the dynamic sealing ring 130 is arranged between the upper first gas distribution ring 120a and the lower side first gas distribution ring 120b, and the upper end surface and the lower end surface of the dynamic sealing ring 130 are respectively provided with several an inner groove 131 .
  • the inner groove 131 is used to accommodate gas leaked from the gap between the first gas distribution ring 120 and the central shaft 110.
  • the gas forms a first high-pressure sealing area in the inner groove 131 to prevent the second Gas leakage of a gas distribution ring 120 , wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110 .
  • the two gas distribution rings 120a and 120b can also be prevented from leaking.
  • the gas provided by the first gas distribution rings 120a and 120b is blown between the two.
  • 3 to 5 show the structure of the dynamic sealing ring in this embodiment.
  • Several inner grooves 131 are located on the inner edge of the dynamic seal ring 130, and are arranged in an annular array along the rotation direction of the dynamic seal ring 130 at a first tangential angle ⁇ , the first tangential angle ⁇ is the distance between the inner grooves 131 and the dynamic seal ring 130.
  • the radial included angle of the sealing ring 130 is the first tangential angle ⁇ ranging from 0° to 30°, for example, the first tangential angle ⁇ is 15°.
  • the inner groove 131 has a first end 1311 and a second end 1312, the width of the first end 1311 is greater than the width of the second end 1312, that is, the inner groove 131 gradually extends from the first end 1311 to the second end 1312. narrowed.
  • the first end 1311 is close to the central rotating shaft 110, and is basically facing the gas leakage of the first gas distribution ring 120, and is used to receive the gas leaked from the first gas distribution ring 120; the second end 1312 is far away from the central rotating shaft 110, forming a retaining wall , used to intercept gas, so that the gas entering the inner groove 131 converts the dynamic pressure into static pressure at the second end 1312 to form a high-pressure sealing area in the inner groove 131 .
  • the cross-sectional shape of the inner groove 131 can be a triangle as shown in FIG. 3 and FIG. 4 . In other embodiments, the cross-sectional shape of the inner groove 131 can also be any narrowed shape such as a spiral shape or an L shape, which is not limited here. .
  • the process of gas forming a high-pressure sealing area in the inner groove 131 will be described in detail below. While the dynamic sealing ring 130 rotates with the central rotating shaft 110, the first end 1311 of the inner groove 131 receives the gas leaked from the first gas distribution ring 120, and the dynamic sealing ring 130 will The received gas is accelerated, and the accelerated gas collides with the second end 1312 of the inner groove 131, converting the dynamic pressure of the gas into static pressure, and then forms a first high-pressure sealing area near the inner groove 131, the first high-pressure sealing area The pressure will be higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110, forcing the gas leaked from the first gas distribution ring 120 to the direction of less air pressure (such as the air intake duct of the central rotating shaft 110 111) to prevent the gas supplied by the first gas distribution ring 120 from continuously leaking at the gap between the first gas distribution ring 120 and the central rotating shaft 110, so that the gas leakage of the first gas distribution ring 120 can be
  • the bottom surface of the inner groove 131 can be set as a plane, but in order to further improve the sealing effect of the dynamic seal ring 130, the bottom surface of the inner groove 131 is provided with an inclined surface, as shown in Figure 5, the bottom surface of the inner groove 131 is aligned with the vertical direction
  • the included angle ⁇ may be 75°-85°.
  • the bottom surface of the inner groove 131 is inclined, which can accelerate the gas and cause greater stagnation pressure, thereby improving the sealing effect.
  • a shielding ring 150 may be provided on the radial periphery of the dynamic sealing ring 130 to prevent external ambient air from entering the first gas distribution ring 120 .
  • a rotating shaft including a central rotating shaft 210, at least one first gas distribution ring 220, a dynamic sealing ring 230 and at least one second gas distribution ring 240, in The radial periphery of the dynamic sealing ring 230 is provided with a shielding ring 250 .
  • At least one first gas distribution ring 220 , at least one dynamic sealing ring 230 and at least one second gas distribution ring 240 are coaxially sleeved on the outside of the central shaft 210 , and the dynamic sealing ring 230 is connected to the first gas distribution ring 220 or the second distribution ring 240 .
  • the air rings 240 are arranged alternately.
  • the difference between the second embodiment and the first embodiment lies in the structure of the dynamic sealing ring 230 and the coaxial arrangement of the second gas distribution ring 240 on the outside of the central rotating shaft 210, and the rest of the structure is the same as the first embodiment.
  • the structure of the second gas distribution ring 240 is the same as that of the first gas distribution ring 220. The difference between the two is that the first gas distribution ring 220 is used to supply gas to the central shaft 210 in the rotating state, and the second gas distribution ring 240 is used to supply gas to the central shaft 210 at rest.
  • the rotating shaft can be applied to a Bernoulli chuck
  • the first gas distribution ring 220 is configured to supply Bernoulli gas to the central rotating shaft 210 when the central rotating shaft 210 is in a rotating state, so that the wafer is suspended above the chuck
  • the second gas distribution ring 240 is configured to supply lifting gas to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so as to lift the wafer to the pick-and-place wafer height.
  • the end surface of the dynamic sealing ring 230 opposite to the first gas distribution ring 220 is provided with several inner grooves 231, and the several inner grooves 231 are located on the inner edge of the dynamic sealing ring 230; the dynamic sealing ring 230
  • a step structure 232 is provided on the end surface opposite to the second gas distribution ring 240 , and the step structure 232 is an annular channel located at the inner edge of the dynamic sealing ring 230 .
  • the structures and functions of the several inner grooves 231 are the same as those in the first embodiment, and are used to form a first high-pressure sealing area in the inner grooves 231 for the gas leaked from the first gas distribution ring 220 when the central rotating shaft 210 rotates.
  • the step structure 232 utilizes its 90° corner to cause boundary layer separation and vortex flow to weaken the gas leakage of the second gas distribution ring 240 .
  • the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with a stepped structure 232 instead of the inner groove 231, because the inner groove 231 mainly uses centrifugal acceleration to form a high pressure in the groove
  • the sealing area achieves a sealing effect, but the second gas distribution ring 240 supplies air to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so even if the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with an inner groove 231, it is also impossible to use the centrifugal acceleration to generate a high-pressure sealing area to achieve the sealing effect.
  • a rotating shaft including a central rotating shaft 310 , at least one first gas distribution ring 320 , a dynamic sealing ring 330 and at least one second gas distribution ring 340 .
  • At least one first gas distribution ring 320 , at least one dynamic sealing ring 330 and at least one second gas distribution ring 340 are coaxially sleeved on the outside of the central shaft 310 , and the dynamic sealing ring 330 is connected to the first gas distribution ring 320 or the second distribution ring 320 .
  • the air rings 340 are arranged alternately.
  • the difference between the third embodiment and the second embodiment lies in the structure of the dynamic sealing ring 330, and the other structures are the same as those of the second embodiment.
  • Figure 12 and Figure 13 disclose the structure of the dynamic sealing ring in this embodiment.
  • the end surface of the dynamic sealing ring 330 opposite to the first gas distribution ring 320 is provided with several inner grooves 331 and several outer grooves 333, and the dynamic sealing ring 330 and the second gas distribution ring A stepped structure 332 and several outer grooves 333 are provided on opposite end surfaces of the 340 .
  • Several inner grooves 331 are configured to prevent gas leakage from the first gas distribution ring 320
  • the stepped structure 332 is configured to prevent gas leakage from the second gas distribution ring 340
  • several outer grooves 333 are configured to prevent external ambient gas from entering the second gas distribution ring 340.
  • a gas distribution ring 320 or a second gas distribution ring 340 is used to solve the problem that ambient gas pollutes the clean gas supplied by the gas distribution ring.
  • the distribution and structure of the plurality of inner grooves 331 are the same as those in the first embodiment, and the distribution and structure of the step structures 332 are the same as those in the second embodiment, so details are not repeated here.
  • the structure and function of the outer trench 333 will be described in detail below.
  • the outer groove 333 is used to accommodate the external ambient gas.
  • the gas forms a second high-pressure sealing area in the outer groove 333 to prevent the external ambient gas from entering the first gas distribution ring 320 or the second gas distribution ring.
  • Ring 340 to prevent environmental gas from polluting the clean gas supplied by the first gas distribution ring 320 or the second gas distribution ring 340, wherein the pressure in the second high-pressure sealing area is higher than the external ambient pressure and lower than that formed in the inner groove 331 The air pressure of the first high pressure sealing area.
  • outer grooves 333 are located on the outer edge of the dynamic seal ring 330, and are arranged in an annular array along the rotation direction of the dynamic seal ring 330 at a second tangential angle ⁇ , and the second tangential angle ⁇ is The included angle between the outer groove 333 and the radial direction of the dynamic seal ring 330 , the second tangential angle ⁇ is 0° ⁇ 30°, for example, ⁇ is 15°.
  • the structure and function of the outer groove 333 are similar to those of the inner groove 131 in the first embodiment.
  • the outer groove 333 is also narrowed, and has a first end 3331 and a second end 3332, the width of the first end 3331 is greater than the width of the second end 3332, the first end 3331 is far away from the central shaft 310, and the second end 3332 is close to the center Shaft 310.
  • the bottom surface of the outer groove 333 may be a plane. It can be understood that, in order to further improve the sealing effect, the bottom surface of the outer groove 333 may also be inclined.
  • a wafer holding device for holding a wafer according to one embodiment of the present invention.
  • the wafer holding device includes a chuck 400 and a rotating shaft 500, and the rotating shaft 500 adopts any rotating shaft in Embodiment 1, Embodiment 2 or Embodiment 3 according to the specific process design.
  • the central rotating shaft 510 of the rotating shaft 500 is connected to and drives the chuck 400 to rotate.
  • the chuck 400 is used to hold the wafer w, and an air outlet duct 410 is arranged inside the chuck 400 .
  • the air outlet of the air inlet pipe 511 of the rotating shaft 500 is connected to the air outlet pipe 410 of the chuck 400.
  • the air inlet pipe 511 of the rotating shaft 500 corresponds to the air outlet pipe 410 one by one, that is, one air inlet pipe 511 is one air outlet pipe 410 provides gas.
  • one or more gas outlet ducts 410 may be provided inside the chuck 400 , such as the wafer holding device shown in FIG. 14 , and two gas outlet ducts 410 are provided in the chuck 400 .
  • the upper surface of the chuck 400 has several Bernoulli air outlet holes, correspondingly, an air outlet duct 410 can be arranged inside the chuck 400, and the air outlet duct 410 is used for the Bernoulli outlet on the chuck 400.
  • the air holes provide gas for keeping the wafer w on the chuck 400 in a suspended state.
  • the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, correspondingly, two air outlet ducts 410 can be arranged inside the chuck 400, one of which is used for Provide gas for the Bernoulli vent hole on the chuck 400, for keeping the wafer w on the chuck 400 in a suspended state; another gas outlet pipe 410 is used for providing gas for the lift vent hole on the chuck 400, for To float the wafer w held on the chuck 400 to the height of the pick-and-place sheet.
  • the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, and at least one set of clamping pins driven by cylinders is arranged on the edge of the chuck 400, correspondingly , three gas outlet pipes 410 can be arranged inside the chuck 400, one of which is used to provide gas for the Bernoulli air outlet on the chuck 400, and is used to keep the wafer w on the chuck 400 in a suspended state; A gas outlet pipe 410 is used to provide gas for the lifting air hole on the chuck 400, and is used to blow the wafer w held on the chuck 400 to the height of the pick-and-place sheet; The air cylinders of at least one set of clamping pins provide gas for driving the cylinders to clamp or release the wafer w.

Abstract

The rotating shaft provided by the present invention comprises a central rotating shaft, first gas distribution rings coaxially sleeved on the outer side of the central rotating shaft, and dynamic sealing rings coaxially fixed on the outer side of the central rotating shaft; the dynamic sealing rings and the first gas distribution rings are arranged alternately; the end surfaces of the dynamic sealing rings opposite to the first gas distribution rings are provided with plurality of inner grooves; the inner grooves are used for accommodating the gas leaked from the first gas distribution rings; when the central rotating shaft rotates, the gas forms high-pressure sealing areas in the inner grooves to prevent gas leakage of the first gas distribution rings. In the present invention, the dynamic sealing rings are provided at positions adjacent to the first gas distribution rings of the rotating shaft, and when the dynamic sealing rings rotate with the central rotating shaft, by means of centrifugal acceleration and narrowing of the shapes of the inner grooves in the dynamic sealing rings, the pressure of the leaked gas in the inner grooves rise to form high-pressure sealing areas so as to prevent continuous leakage of the gas provided by the first gas distribution rings, thereby ensuring that the gas supply volume of the rotating shaft meets process requirements, thus improving the stability of the process. The present invention also provides a wafer holding device using the rotating shaft.

Description

晶圆保持装置及其旋转轴Wafer holder and its axis of rotation 技术领域technical field
本发明涉及半导体制造技术领域,更具体地,涉及一种晶圆保持装置及其旋转轴。The invention relates to the technical field of semiconductor manufacturing, and more particularly, to a wafer holding device and a rotating shaft thereof.
背景技术Background technique
晶圆背面清洗是晶圆湿法工艺的一个重要工序。通过清洗晶圆背面可避免交叉污染,提升良率。在背面清洗工艺中,伯努利卡盘已经获得广泛应用。Wafer backside cleaning is an important process in the wafer wet process. By cleaning the back of the wafer, cross-contamination can be avoided and the yield rate can be improved. In the backside cleaning process, Bernoulli chucks have been widely used.
如图15所示,伯努利卡盘包括卡盘30和旋转轴40。旋转轴40的外侧同轴套设有伯努利配气环41及抬升配气环42。伯努利配气环41的供气管道411通过旋转轴40的第一轴内气道43与卡盘30上的伯努利出气管道31相连通,用于晶圆w清洗时向晶圆w下表面供应气体,以使晶圆w悬浮在卡盘30上方,并能够防止清洗液流向晶圆w下表面,造成晶圆w正面被刻蚀。抬升配气环42的供气管道421通过旋转轴40的第二轴内气道44与卡盘30上的抬升出气管道32相连通,用于取放晶圆w时向晶圆w下表面供应气体,用以调整晶圆w与卡盘30的上表面之间的距离。As shown in FIG. 15 , the Bernoulli chuck includes a chuck 30 and a rotating shaft 40 . The outer coaxial sleeve of the rotating shaft 40 is provided with a Bernoulli gas distribution ring 41 and a lifting gas distribution ring 42 . The gas supply pipeline 411 of the Bernoulli gas distribution ring 41 communicates with the Bernoulli gas outlet pipeline 31 on the chuck 30 through the first in-axis air channel 43 of the rotating shaft 40, and is used for feeding the wafer w when the wafer w is cleaned. Gas is supplied to the lower surface to suspend the wafer w above the chuck 30 and prevent the cleaning liquid from flowing to the lower surface of the wafer w, causing the front side of the wafer w to be etched. The air supply pipe 421 of the lifting gas distribution ring 42 is connected with the lifting air outlet pipe 32 on the chuck 30 through the second in-axis air channel 44 of the rotating shaft 40, and is used to supply the lower surface of the wafer w when picking and placing the wafer w. The gas is used to adjust the distance between the wafer w and the upper surface of the chuck 30 .
在清洗晶圆w时,旋转轴40带动卡盘30旋转,而伯努利配气环41和抬升配气环42静止不动,通常在旋转轴40与配气环(41,42)之间采用迷宫密封,避免气体从旋转轴40与配气环(41,42)之间的间隙泄露。需要注意的是,迷宫密封只是减少泄漏量而非杜绝泄漏。气体仍可沿旋转轴40表面从配气环(41,42)上端或下端泄露,此外,当伯努利配气环41或抬升配气环42其中之一供气,而另一个关闭时,气体因泄露可在两个配气环(41,42)接触面(即图15所示的b处)串通。When cleaning the wafer w, the rotating shaft 40 drives the chuck 30 to rotate, while the Bernoulli gas distribution ring 41 and the lifting gas distribution ring 42 are stationary, usually between the rotating shaft 40 and the gas distribution rings (41, 42) A labyrinth seal is used to prevent gas from leaking from the gap between the rotating shaft 40 and the gas distribution rings (41, 42). It should be noted that the labyrinth seal only reduces the amount of leakage, not eliminates it. The gas can still leak from the upper or lower ends of the gas distribution rings (41, 42) along the surface of the rotating shaft 40. In addition, when one of the Bernoulli gas distribution ring 41 or the lifting gas distribution ring 42 supplies gas while the other is closed, Gas can collude at the contact surfaces of the two gas distribution rings (41, 42) (ie, place b shown in Figure 15) due to leakage.
配气环(41,42)的气体泄漏会使供应至晶圆w下表面的气量不足,这将从以下两方向影响伯努利卡盘的稳定性:1)当取放晶圆w时,抬升配气环42的气体泄露导致从抬升出气管道32流出的气体流量不足,进而使得晶圆w吹浮的高度无法达到取放片的高度要求;2)清洗晶圆w时,伯努利配气环41的气体泄露致使从伯努利出气管道31流出的气体流量不足,导致清洗液容易流 向晶圆w的下表面,进而导致晶圆w的边缘和正面被刻蚀,不能满足工艺要求。The gas leakage of the gas distribution rings (41, 42) will cause insufficient gas supply to the lower surface of the wafer w, which will affect the stability of the Bernoulli chuck from the following two directions: 1) When picking and placing the wafer w, The gas leakage from the lifting gas distribution ring 42 leads to insufficient gas flow from the lifting outlet pipe 32, which makes the floating height of the wafer w unable to meet the height requirements for picking and placing the wafer; 2) when cleaning the wafer w, the Bernoulli matching Gas leakage from the gas ring 41 results in insufficient gas flow from the Bernoulli gas outlet pipe 31 , causing the cleaning liquid to easily flow to the lower surface of the wafer w, which in turn causes the edge and front side of the wafer w to be etched, which cannot meet the process requirements.
发明内容Contents of the invention
本发明的目的是提供一种晶圆保持装置及其旋转轴,用于解决旋转轴密封效果不足,影响工艺稳定性的问题。The purpose of the present invention is to provide a wafer holding device and its rotating shaft, which are used to solve the problem that the sealing effect of the rotating shaft is insufficient and affects the stability of the process.
为实现上述目的,本发明提供的一种旋转轴,用于与保持晶圆的卡盘连接,包括:In order to achieve the above object, the present invention provides a rotating shaft for connecting with a chuck holding a wafer, including:
中心转轴,所述中心转轴内部设置有进气管道;A central rotating shaft, the central rotating shaft is provided with an air intake pipe inside;
至少一个第一配气环,所述至少一个第一配气环同轴套设在中心转轴的外侧,且所述至少一个第一配气环与中心转轴之间具有间隙,所述至少一个第一配气环内部设置有供气管道,所述至少一个第一配气环的供气管道与中心转轴的进气管道相连通,用于向旋转状态的中心转轴供应气体;At least one first gas distribution ring, the at least one first gas distribution ring is coaxially sleeved on the outside of the central shaft, and there is a gap between the at least one first gas distribution ring and the central shaft, the at least one first gas distribution ring A gas distribution ring is provided with a gas supply pipe inside, and the gas supply pipe of the at least one first gas distribution ring communicates with the air intake pipe of the central rotating shaft, and is used to supply gas to the rotating central rotating shaft;
至少一个动密封环,所述至少一个动密封环同轴固定在中心转轴的外侧,且所述至少一个动密封环与所述至少一个第一配气环交替设置,动密封环与第一配气环相对的端面上设置有若干个内沟槽,内沟槽用于收纳来自第一配气环和中心转轴之间的间隙泄露的气体,中心转轴旋转时使该泄露的气体在内沟槽内形成第一高压密封区,以阻止第一配气环的气体泄漏,其中,第一高压密封区内的气压高于第一配气环与中心转轴之间的间隙内的气压。At least one dynamic sealing ring, the at least one dynamic sealing ring is coaxially fixed on the outside of the central rotating shaft, and the at least one dynamic sealing ring is alternately arranged with the at least one first gas distribution ring, and the dynamic sealing ring and the first distribution ring are arranged alternately. There are several inner grooves on the opposite end face of the gas ring, the inner grooves are used to accommodate the leaked gas from the gap between the first gas distribution ring and the central rotating shaft, and the leaked gas is made into the inner grooves when the central rotating shaft rotates. A first high-pressure sealing area is formed inside to prevent gas leakage of the first gas distribution ring, wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring and the central rotating shaft.
在本发明中,还提供一种晶圆保持装置,包括:In the present invention, a wafer holding device is also provided, comprising:
卡盘,所述卡盘用于保持晶圆,所述卡盘内部设有出气管道;A chuck, the chuck is used to hold the wafer, and the inside of the chuck is provided with an air outlet pipe;
任一项上述旋转轴,所述卡盘固定在旋转轴的顶部;Any one of the above-mentioned rotating shafts, the chuck is fixed on the top of the rotating shaft;
其中,所述卡盘内部的出气管道与所述旋转轴内部的进气管道相连通。Wherein, the air outlet pipe inside the chuck communicates with the air inlet pipe inside the rotating shaft.
本发明提供的旋转轴配置相邻设置的第一配气环和动密封环,通过动密封环与第一配气环相对的端面上设置内沟槽,在动密封环随中心转轴旋转时,利用离心加速和其上内沟槽收窄外形,使得第一配气环泄露的气体在内沟槽内的气压上升,形成高压密封区,进而阻止第一配气环提供的气体持续地从第一配气环和中心转轴之间的间隙泄露,以确保第一配气环的供气量满足工艺要求,提高工艺的稳定性。The rotating shaft provided by the present invention is configured with the first gas distribution ring and the dynamic sealing ring arranged adjacently, and an inner groove is provided on the end surface of the dynamic sealing ring opposite to the first gas distribution ring. When the dynamic sealing ring rotates with the central shaft, Utilizing centrifugal acceleration and the narrowing shape of the upper inner groove, the air pressure in the inner groove of the gas leaked from the first gas distribution ring rises to form a high-pressure sealing area, thereby preventing the gas provided by the first gas distribution ring from continuously flowing from the first gas distribution ring. The gap between the first gas distribution ring and the central rotating shaft leaks to ensure that the gas supply volume of the first gas distribution ring meets the process requirements and improve the stability of the process.
本发明提出的晶圆保持装置采用配置有动密封环的旋转轴,能够使得卡盘内的出气管道的出气量满足工艺需求,从而有效提高工艺的稳定性。The wafer holding device proposed by the present invention adopts a rotating shaft equipped with a dynamic sealing ring, so that the gas output of the gas outlet pipeline in the chuck can meet the process requirements, thereby effectively improving the stability of the process.
附图概述Figure overview
图1为本发明实施例一提供的旋转轴的剖面图;Fig. 1 is a cross-sectional view of a rotating shaft provided by Embodiment 1 of the present invention;
图2为图1的局部放大图;Figure 2 is a partially enlarged view of Figure 1;
图3为本发明实施例一提供的动密封环的立体图;Fig. 3 is a perspective view of a dynamic sealing ring provided by Embodiment 1 of the present invention;
图4为动密封环的俯视图;Figure 4 is a top view of the dynamic sealing ring;
图5为动密封环的剖面图;Figure 5 is a cross-sectional view of the dynamic sealing ring;
图6为本发明实施例二提供的旋转轴的剖面图;Fig. 6 is a cross-sectional view of the rotating shaft provided by Embodiment 2 of the present invention;
图7为图6的局部放大图;Figure 7 is a partially enlarged view of Figure 6;
图8为本发明实施例二提供的动密封环的立体图;Fig. 8 is a perspective view of a dynamic sealing ring provided by Embodiment 2 of the present invention;
图9为本发明实施例二提供的动密封环的另一立体图;Fig. 9 is another perspective view of the dynamic sealing ring provided by Embodiment 2 of the present invention;
图10为本发明实施例三提供的旋转轴的剖面图;Fig. 10 is a cross-sectional view of the rotating shaft provided by Embodiment 3 of the present invention;
图11为图10的局部放大图;Figure 11 is a partially enlarged view of Figure 10;
图12为本发明实施例三提供的动密封环的立体图;Fig. 12 is a perspective view of the dynamic sealing ring provided by Embodiment 3 of the present invention;
图13为图12的俯视图;Figure 13 is a top view of Figure 12;
图14为本发明实施例四提供的晶圆保持装置的剖面图;以及FIG. 14 is a cross-sectional view of a wafer holding device provided in Embodiment 4 of the present invention; and
图15为现有技术中伯努利卡盘的示意图。Fig. 15 is a schematic diagram of a Bernoulli chuck in the prior art.
本发明的较佳实施方式Preferred Embodiments of the Invention
为详细说明本发明的技术内容、构造特征、所达成目的及效果,下面将结合实施例并配合图式予以详细说明。In order to describe the technical content, structural features, goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and drawings.
实施例一Embodiment one
参见图1,示出了本实施例中的旋转轴的剖面图。旋转轴包括中心转轴110、至少一个第一配气环120和至少一个动密封环130。Referring to Fig. 1, a cross-sectional view of the rotating shaft in this embodiment is shown. The rotating shaft includes a central rotating shaft 110 , at least one first gas distribution ring 120 and at least one dynamic sealing ring 130 .
中心转轴110的内部设置有进气管道111,进气管道111的进气口位于中心转轴110的外侧壁,进气管道111的出气口位于中心转轴110的顶部。An air intake duct 111 is arranged inside the central rotating shaft 110 , the air inlet of the air intake duct 111 is located on the outer wall of the central rotating shaft 110 , and the air outlet of the air intake duct 111 is located on the top of the central rotating shaft 110 .
第一配气环120同轴套设在中心转轴110的外侧,用于向旋转状态的中心转轴110供应气体。第一配气环120的内部设置有供气管道121,供气管道121的进气口位于第一配气环120的外侧壁,供气管道121的出气口位于第一配气环120的内侧壁,具体地,供气管道121的出气口为环形出气槽。供气管道121的出气口与进气管道111的进气口连通,第一配气环120通过供气管道121和进气管道111为中心转轴110提供气体,如氮气。The first gas distribution ring 120 is coaxially sleeved on the outside of the central rotating shaft 110 for supplying gas to the rotating central rotating shaft 110 . The inside of the first gas distribution ring 120 is provided with an air supply pipe 121, the air inlet of the air supply pipe 121 is located on the outer wall of the first gas distribution ring 120, and the gas outlet of the air supply pipe 121 is located on the inside of the first gas distribution ring 120 The wall, specifically, the air outlet of the air supply pipe 121 is an annular air outlet groove. The gas outlet of the gas supply pipeline 121 communicates with the gas inlet of the gas inlet pipeline 111 , and the first gas distribution ring 120 provides gas, such as nitrogen, for the central shaft 110 through the gas supply pipeline 121 and the gas inlet pipeline 111 .
进气管道111的数量可以为多个,供气管道121的数量与进气管道111的数量一一对应,每个供气管道121为一个进气管道111提供气体。需要注意的是,一个第一配气环120内可以设置多个供气管道121,分别为中心转轴110内的多个进气管道111提供气体;一个第一配气环120也可以设置一条供气管道121,由多个第一配气环120分别为中心转轴110内的多个进气管道111提供气体。进气管道111、第一配气环120和供气管道121的数量可以根据实际情况进行调整。The number of intake pipes 111 can be multiple, the number of air supply pipes 121 corresponds to the number of air intake pipes 111 one by one, and each air supply pipe 121 provides gas for one air intake pipe 111 . It should be noted that a plurality of gas supply pipes 121 can be arranged in a first gas distribution ring 120 to respectively provide gas for a plurality of air intake pipes 111 in the central rotating shaft 110; a first gas distribution ring 120 can also be provided with a The air pipes 121 provide air to the air intake pipes 111 in the central rotating shaft 110 through the multiple first gas distribution rings 120 . The numbers of the intake pipe 111, the first gas distribution ring 120 and the air supply pipe 121 can be adjusted according to the actual situation.
在图1示出的旋转轴中,两个第一配气环120分别为中心转轴110内的两个进气管道111提供气体。中心转轴110内的两条进气管道111分别为第一进气管道111a和第二进气管道111b。两个第一配气环120沿中心转轴110的轴向上下配置,分别记为上侧第一配气环120a和下侧第一配气环120b。两个第一配气环(120a,120b)内各设置一个供气管道121,分别与第一进气管道111a和第二进气管道111b相连通。In the rotating shaft shown in FIG. 1 , two first gas distribution rings 120 respectively provide gas to two intake pipes 111 in the central rotating shaft 110 . The two intake ducts 111 in the central rotating shaft 110 are respectively a first intake duct 111a and a second intake duct 111b. The two first gas distribution rings 120 are disposed up and down along the axial direction of the central rotating shaft 110 , and are respectively denoted as the upper first gas distribution ring 120 a and the lower first gas distribution ring 120 b. Each of the two first gas distribution rings (120a, 120b) is provided with an air supply pipe 121, which communicates with the first air intake pipe 111a and the second air intake pipe 111b respectively.
动密封环130同轴固定在中心转轴110的外侧,当中心转轴110旋转时,动密封环130可以与中心转轴110同步转动。动密封环130与第一配气环120交替设置在中心转轴110的外侧。第一配气环120沿其轴线方向的至少一侧设置有动密封环130。例如,图1中,上侧第一配气环120a的下方设置动密封环130,下侧第一配气环120b的上侧设置动密封环130。当然,在其他实施例中,第一配气环120的上下两侧可以各设置一个动密封环130。此外,相邻两个第一配气环之间可以共用一个动密封环,如图1所示,动密封环130设置在上侧第一配气环120a和下侧第一配气环120b之间。动密封环130相对第一配气环120的设置位置及数量可根据工艺具体要求进行调整。The dynamic sealing ring 130 is coaxially fixed on the outside of the central rotating shaft 110 , and when the central rotating shaft 110 rotates, the dynamic sealing ring 130 can rotate synchronously with the central rotating shaft 110 . The dynamic sealing rings 130 and the first gas distribution rings 120 are alternately arranged on the outside of the central rotating shaft 110 . A dynamic sealing ring 130 is provided on at least one side of the first gas distribution ring 120 along its axial direction. For example, in FIG. 1 , a dynamic sealing ring 130 is disposed below the upper first gas distribution ring 120 a, and a dynamic sealing ring 130 is disposed above the lower first gas distribution ring 120 b. Of course, in other embodiments, a dynamic sealing ring 130 may be provided on the upper and lower sides of the first gas distribution ring 120 . In addition, a dynamic sealing ring can be shared between two adjacent first gas distribution rings. As shown in FIG. between. The position and quantity of the dynamic sealing ring 130 relative to the first gas distribution ring 120 can be adjusted according to the specific requirements of the process.
第一配气环120为静止件,中心转轴110为运动件,为保证中心转轴110能够在驱动机构(图未示出)带动下自由转动,第一配气环120与中心转轴110之间具有间隙。较佳地,在第一配气环120的供气管道121的出气口上下两侧配置有迷宫密封槽122,当第一配气环120供应气体时,迷宫密封槽122可以防止部分气体沿第一配气环120和中心转轴110之间的间隙泄露。The first gas distribution ring 120 is a stationary part, and the central rotating shaft 110 is a moving part. In order to ensure that the central rotating shaft 110 can rotate freely under the drive of the driving mechanism (not shown), there is a gap between the first gas distribution ring 120 and the central rotating shaft 110. gap. Preferably, labyrinth seal grooves 122 are arranged on the upper and lower sides of the gas outlet of the gas supply pipe 121 of the first gas distribution ring 120. When the first gas distribution ring 120 supplies gas, the labyrinth seal grooves 122 can prevent part of the gas from moving along the first gas distribution ring 120. A gap between a gas distribution ring 120 and the central shaft 110 leaks.
在本实施例中,动密封环130与中心转轴110为分体设置,如图1和图2所示,动密封环130通过紧固件10(如螺钉)同轴固定在中心转轴110的外侧,动密封环130与中心转轴110之间设置有密封圈20,密封圈20能够阻止由第一配气环120泄露的气体沿中心转轴110的轴向继续扩散。In this embodiment, the dynamic sealing ring 130 and the central rotating shaft 110 are arranged separately. As shown in FIG. 1 and FIG. A sealing ring 20 is provided between the dynamic sealing ring 130 and the central rotating shaft 110 , and the sealing ring 20 can prevent the gas leaked from the first gas distribution ring 120 from continuing to diffuse along the axial direction of the central rotating shaft 110 .
动密封环130与第一配气环120相对的端面上设置有若干个内沟槽131。参见图2,在本实施例中,动密封环130设置在上侧第一配气环120a和下侧第一配气环120b之间,动密封环130的上端面和下端面分别设置有若干个内沟槽131。Several inner grooves 131 are provided on the end surface of the dynamic sealing ring 130 opposite to the first gas distribution ring 120 . Referring to Fig. 2, in this embodiment, the dynamic sealing ring 130 is arranged between the upper first gas distribution ring 120a and the lower side first gas distribution ring 120b, and the upper end surface and the lower end surface of the dynamic sealing ring 130 are respectively provided with several an inner groove 131 .
内沟槽131用于收纳来自第一配气环120和中心转轴110之间的间隙泄露的气体,中心转轴110旋转时使该气体在内沟槽131内形成第一高压密封区,以阻止第一配气环120的气体泄漏,其中,第一高压密封区内的气压高于第一配气环120与中心转轴110之间的间隙内的气压。对于设置在上侧第一配气环120a和下侧第一配气环120b之间的动密封环130,在阻止两个第一配气环120a和120b气体泄漏的同时,还能阻止两个第一配气环120a和120b提供的气体在两者之间串气。The inner groove 131 is used to accommodate gas leaked from the gap between the first gas distribution ring 120 and the central shaft 110. When the central shaft 110 rotates, the gas forms a first high-pressure sealing area in the inner groove 131 to prevent the second Gas leakage of a gas distribution ring 120 , wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110 . For the dynamic sealing ring 130 arranged between the first gas distribution ring 120a on the upper side and the first gas distribution ring 120b on the lower side, while preventing the gas leakage of the two first gas distribution rings 120a and 120b, the two gas distribution rings 120a and 120b can also be prevented from leaking. The gas provided by the first gas distribution rings 120a and 120b is blown between the two.
图3至图5示出了本实施例中动密封环的结构。若干个内沟槽131位于动密封环130的内边缘,并沿动密封环130的旋转方向以第一切向角α呈环形阵列排布,第一切向角α为内沟槽131与动密封环130径向的夹角,第一切向角α为0°~30°,例如,第一切向角α为15°。3 to 5 show the structure of the dynamic sealing ring in this embodiment. Several inner grooves 131 are located on the inner edge of the dynamic seal ring 130, and are arranged in an annular array along the rotation direction of the dynamic seal ring 130 at a first tangential angle α, the first tangential angle α is the distance between the inner grooves 131 and the dynamic seal ring 130. The radial included angle of the sealing ring 130 is the first tangential angle α ranging from 0° to 30°, for example, the first tangential angle α is 15°.
参见图4,内沟槽131具有第一端1311和第二端1312,第一端1311的宽度大于第二端1312的宽度,也即内沟槽131从第一端1311到第二端1312逐渐收窄。第一端1311靠近中心转轴110,基本上正对第一配气环120的气体泄漏处,用于接收来自第一配气环120泄露的气体;第二端1312远离中心转轴110,形成挡墙,用于拦截气体,使得进入内沟槽131的气体在第二端1312将动压转变为静压,以在内沟槽131内形成高压密封区。内沟槽131的截面形状可以为图3和图4所示的三角形,在其他实施例中,内沟槽131的截面形状还可以为螺旋形、L形等任意收窄形状,在此不作限定。4, the inner groove 131 has a first end 1311 and a second end 1312, the width of the first end 1311 is greater than the width of the second end 1312, that is, the inner groove 131 gradually extends from the first end 1311 to the second end 1312. narrowed. The first end 1311 is close to the central rotating shaft 110, and is basically facing the gas leakage of the first gas distribution ring 120, and is used to receive the gas leaked from the first gas distribution ring 120; the second end 1312 is far away from the central rotating shaft 110, forming a retaining wall , used to intercept gas, so that the gas entering the inner groove 131 converts the dynamic pressure into static pressure at the second end 1312 to form a high-pressure sealing area in the inner groove 131 . The cross-sectional shape of the inner groove 131 can be a triangle as shown in FIG. 3 and FIG. 4 . In other embodiments, the cross-sectional shape of the inner groove 131 can also be any narrowed shape such as a spiral shape or an L shape, which is not limited here. .
下面将详细介绍气体在内沟槽131形成高压密封区的过程。在动密封环130随中心转轴110转动的同时,内沟槽131的第一端1311接收来自第一配气环120泄漏的气体,动密封环130通过离心力和内沟槽131的收窄外形将接收的气体加速,被加速的气体碰撞到内沟槽131的第二端1312,将气体的动压转化为静压,进而在内沟槽131附近形成第一高压密封区,第一高压密封区的压力将会高于第一配气环120和中心转轴110之间的间隙内的气压,迫使从第一配气环120泄漏的气体朝气压较小的方向(例如中心转轴110的进气管道111)流动,避免第一配气环120供应的气体在第一配气环120和中心转轴110之间 的间隙处持续泄漏,这样可以减少第一配气环120的气体泄漏。The process of gas forming a high-pressure sealing area in the inner groove 131 will be described in detail below. While the dynamic sealing ring 130 rotates with the central rotating shaft 110, the first end 1311 of the inner groove 131 receives the gas leaked from the first gas distribution ring 120, and the dynamic sealing ring 130 will The received gas is accelerated, and the accelerated gas collides with the second end 1312 of the inner groove 131, converting the dynamic pressure of the gas into static pressure, and then forms a first high-pressure sealing area near the inner groove 131, the first high-pressure sealing area The pressure will be higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110, forcing the gas leaked from the first gas distribution ring 120 to the direction of less air pressure (such as the air intake duct of the central rotating shaft 110 111) to prevent the gas supplied by the first gas distribution ring 120 from continuously leaking at the gap between the first gas distribution ring 120 and the central rotating shaft 110, so that the gas leakage of the first gas distribution ring 120 can be reduced.
内沟槽131的底面可以设置为平面,但是为进一步提高动密封环130的密封效果,内沟槽131的底面倾斜设置的斜面,如图5所示,内沟槽131的底面与垂直方向的夹角β可以为75°~85°。内沟槽131的底面倾斜设置,能够起到加速气体并引起更大的滞止压强的作用,进而提高了密封效果。The bottom surface of the inner groove 131 can be set as a plane, but in order to further improve the sealing effect of the dynamic seal ring 130, the bottom surface of the inner groove 131 is provided with an inclined surface, as shown in Figure 5, the bottom surface of the inner groove 131 is aligned with the vertical direction The included angle β may be 75°-85°. The bottom surface of the inner groove 131 is inclined, which can accelerate the gas and cause greater stagnation pressure, thereby improving the sealing effect.
当动密封环130随中心转轴110旋转时,在动密封环130和第一配气环120之间的缝隙边缘会因动密封环130旋转而吸入部分外部的环境气体,若涌入内沟槽131的环境气体的压力超过第一高压密封区的气压,则外部的环境气体会穿越第一高压密封区进入第一配气环120,对第一配气环120提供的洁净气体造成污染。为避免这一情况的发生,如图1和图2所示,可以在动密封环130的径向外围设置遮挡环150,用以阻挡外部的环境气体进入第一配气环120。When the dynamic sealing ring 130 rotates with the central shaft 110, the edge of the gap between the dynamic sealing ring 130 and the first gas distribution ring 120 will absorb part of the external ambient air due to the rotation of the dynamic sealing ring 130. If the pressure of the ambient gas at 131 exceeds the air pressure of the first high-pressure sealing area, the external ambient gas will pass through the first high-pressure sealing area and enter the first gas distribution ring 120 , polluting the clean gas provided by the first gas distribution ring 120 . In order to avoid this situation, as shown in FIG. 1 and FIG. 2 , a shielding ring 150 may be provided on the radial periphery of the dynamic sealing ring 130 to prevent external ambient air from entering the first gas distribution ring 120 .
实施例二Embodiment two
参见图6和图7,揭示了根据本发明的又一实施例的旋转轴,包括中心转轴210、至少一个第一配气环220、动密封环230和至少一个第二配气环240,在动密封环230的径向外围设置有遮挡环250。至少一个第一配气环220、至少一个动密封环230和至少一个第二配气环240同轴套设在中心转轴210的外侧,动密封环230与第一配气环220或第二配气环240交替设置。实施例二与实施例一的不同之处在于,动密封环230的结构以及中心转轴210外侧还同轴配置有第二配气环240,其余结构与实施例一相同。Referring to Fig. 6 and Fig. 7, a rotating shaft according to another embodiment of the present invention is disclosed, including a central rotating shaft 210, at least one first gas distribution ring 220, a dynamic sealing ring 230 and at least one second gas distribution ring 240, in The radial periphery of the dynamic sealing ring 230 is provided with a shielding ring 250 . At least one first gas distribution ring 220 , at least one dynamic sealing ring 230 and at least one second gas distribution ring 240 are coaxially sleeved on the outside of the central shaft 210 , and the dynamic sealing ring 230 is connected to the first gas distribution ring 220 or the second distribution ring 240 . The air rings 240 are arranged alternately. The difference between the second embodiment and the first embodiment lies in the structure of the dynamic sealing ring 230 and the coaxial arrangement of the second gas distribution ring 240 on the outside of the central rotating shaft 210, and the rest of the structure is the same as the first embodiment.
第二配气环240的结构与第一配气环220的结构相同,两者的不同之处在于,第一配气环220用于向旋转状态的中心转轴210供应气体,第二配气环240用于向静止状态的中心转轴210供应气体。例如,旋转轴可应用于伯努利卡盘,第一配气环220配置为在中心转轴210处于旋转状态下,向中心转轴210供应伯努利气体,以使晶圆悬浮在卡盘的上方,第二配气环240配置为在中心转轴210处于静止状态下,向中心转轴210供应提升气体,以使晶圆提升至取放片高度。The structure of the second gas distribution ring 240 is the same as that of the first gas distribution ring 220. The difference between the two is that the first gas distribution ring 220 is used to supply gas to the central shaft 210 in the rotating state, and the second gas distribution ring 240 is used to supply gas to the central shaft 210 at rest. For example, the rotating shaft can be applied to a Bernoulli chuck, and the first gas distribution ring 220 is configured to supply Bernoulli gas to the central rotating shaft 210 when the central rotating shaft 210 is in a rotating state, so that the wafer is suspended above the chuck , the second gas distribution ring 240 is configured to supply lifting gas to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so as to lift the wafer to the pick-and-place wafer height.
参见图7至图9,动密封环230与第一配气环220相对的端面上设置有若干个内沟槽231,若干个内沟槽231位于动密封环230的内边缘;动密封环230与第二配气环240相对的端面上设置台阶结构232,台阶结构232为位于动密封环230的内边缘的环形通槽。若干个内沟槽231的结构和作用与实施例一相 同,用以在中心转轴210旋转时使第一配气环220泄露的气体在内沟槽231内形成第一高压密封区。台阶结构232利用其90°拐角造成边界层分离和产生涡流来减弱第二配气环240的气体泄漏。Referring to Fig. 7 to Fig. 9, the end surface of the dynamic sealing ring 230 opposite to the first gas distribution ring 220 is provided with several inner grooves 231, and the several inner grooves 231 are located on the inner edge of the dynamic sealing ring 230; the dynamic sealing ring 230 A step structure 232 is provided on the end surface opposite to the second gas distribution ring 240 , and the step structure 232 is an annular channel located at the inner edge of the dynamic sealing ring 230 . The structures and functions of the several inner grooves 231 are the same as those in the first embodiment, and are used to form a first high-pressure sealing area in the inner grooves 231 for the gas leaked from the first gas distribution ring 220 when the central rotating shaft 210 rotates. The step structure 232 utilizes its 90° corner to cause boundary layer separation and vortex flow to weaken the gas leakage of the second gas distribution ring 240 .
在本实施例中,动密封环230与第二配气环240相对的端面上设置台阶结构232,而不是内沟槽231,这是因为内沟槽231主要是利用离心加速在槽内形成高压密封区达到密封效果,然而第二配气环240是在中心转轴210处于静止状态时向中心转轴210供气,那么即使动密封环230与第二配气环240相对的端面上设置内沟槽231,也无法利用离心加速产生高压密封区来实现密封效果。In this embodiment, the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with a stepped structure 232 instead of the inner groove 231, because the inner groove 231 mainly uses centrifugal acceleration to form a high pressure in the groove The sealing area achieves a sealing effect, but the second gas distribution ring 240 supplies air to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so even if the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with an inner groove 231, it is also impossible to use the centrifugal acceleration to generate a high-pressure sealing area to achieve the sealing effect.
实施例三Embodiment Three
参见图10和图11,揭示了根据本发明的又一实施例的旋转轴,包括中心转轴310、至少一个第一配气环320、动密封环330和至少一个第二配气环340。至少一个第一配气环320、至少一个动密封环330和至少一个第二配气环340同轴套设在中心转轴310的外侧,动密封环330与第一配气环320或第二配气环340交替设置。实施例三与实施例二的不同之处在于动密封环330的结构,其他结构与实施例二相同。Referring to FIG. 10 and FIG. 11 , a rotating shaft according to another embodiment of the present invention is disclosed, including a central rotating shaft 310 , at least one first gas distribution ring 320 , a dynamic sealing ring 330 and at least one second gas distribution ring 340 . At least one first gas distribution ring 320 , at least one dynamic sealing ring 330 and at least one second gas distribution ring 340 are coaxially sleeved on the outside of the central shaft 310 , and the dynamic sealing ring 330 is connected to the first gas distribution ring 320 or the second distribution ring 320 . The air rings 340 are arranged alternately. The difference between the third embodiment and the second embodiment lies in the structure of the dynamic sealing ring 330, and the other structures are the same as those of the second embodiment.
图12和图13揭示了本实施例中动密封环的结构。如图11至图13所示,动密封环330与第一配气环320相对的端面上设置有若干个内沟槽331和若干个外沟槽333,动密封环330与第二配气环340相对的端面上设置有台阶结构332和若干个外沟槽333。若干个内沟槽331配置为阻止第一配气环320的气体泄漏,台阶结构332配置为阻止第二配气环340的气体泄漏,若干个外沟槽333配置为阻止外部的环境气体进入第一配气320环或第二配气环340,用以解决环境气体对配气环供应的洁净气体造成污染的问题。若干个内沟槽331的分布以及结构与实施例一相同,台阶结构332的分布和结构与实施例二相同,故在此不再赘述。下文将详细介绍外沟槽333的结构及作用。Figure 12 and Figure 13 disclose the structure of the dynamic sealing ring in this embodiment. As shown in Figures 11 to 13, the end surface of the dynamic sealing ring 330 opposite to the first gas distribution ring 320 is provided with several inner grooves 331 and several outer grooves 333, and the dynamic sealing ring 330 and the second gas distribution ring A stepped structure 332 and several outer grooves 333 are provided on opposite end surfaces of the 340 . Several inner grooves 331 are configured to prevent gas leakage from the first gas distribution ring 320, the stepped structure 332 is configured to prevent gas leakage from the second gas distribution ring 340, and several outer grooves 333 are configured to prevent external ambient gas from entering the second gas distribution ring 340. A gas distribution ring 320 or a second gas distribution ring 340 is used to solve the problem that ambient gas pollutes the clean gas supplied by the gas distribution ring. The distribution and structure of the plurality of inner grooves 331 are the same as those in the first embodiment, and the distribution and structure of the step structures 332 are the same as those in the second embodiment, so details are not repeated here. The structure and function of the outer trench 333 will be described in detail below.
外沟槽333用于收纳外部的环境气体,中心转轴310旋转时使该气体在外沟槽333内形成第二高压密封区,以阻止外部的环境气体进入第一配气环320或第二配气环340,避免环境气体污染第一配气环320或第二配气环340供应的洁净气体,其中,第二高压密封区的气压高于外部的环境气压,且低于内沟槽331内形成的第一高压密封区的气压。The outer groove 333 is used to accommodate the external ambient gas. When the central shaft 310 rotates, the gas forms a second high-pressure sealing area in the outer groove 333 to prevent the external ambient gas from entering the first gas distribution ring 320 or the second gas distribution ring. Ring 340, to prevent environmental gas from polluting the clean gas supplied by the first gas distribution ring 320 or the second gas distribution ring 340, wherein the pressure in the second high-pressure sealing area is higher than the external ambient pressure and lower than that formed in the inner groove 331 The air pressure of the first high pressure sealing area.
参见图12和图13,若干外沟槽333位于动密封环330的外边缘,并沿动密封环330的旋转方向以第二切向角γ呈环形阵列排布,第二切向角γ为外沟槽333与动密封环330径向的夹角,第二切向角γ为0°~30°,例如γ为15°。12 and 13, several outer grooves 333 are located on the outer edge of the dynamic seal ring 330, and are arranged in an annular array along the rotation direction of the dynamic seal ring 330 at a second tangential angle γ, and the second tangential angle γ is The included angle between the outer groove 333 and the radial direction of the dynamic seal ring 330 , the second tangential angle γ is 0°˜30°, for example, γ is 15°.
再次参见图12和图13,外沟槽333的结构和作用与实施例一中内沟槽131相似。外沟槽333也为收窄结构,具有第一端3331和第二端3332,第一端3331的宽度大于第二端3332的宽度,第一端3331远离中心转轴310,第二端3332靠近中心转轴310。外沟槽333的底面可以为平面,可以理解的是,为进一步提高密封效果,外沟槽333的底面也可以倾斜设置的斜面。Referring again to FIG. 12 and FIG. 13 , the structure and function of the outer groove 333 are similar to those of the inner groove 131 in the first embodiment. The outer groove 333 is also narrowed, and has a first end 3331 and a second end 3332, the width of the first end 3331 is greater than the width of the second end 3332, the first end 3331 is far away from the central shaft 310, and the second end 3332 is close to the center Shaft 310. The bottom surface of the outer groove 333 may be a plane. It can be understood that, in order to further improve the sealing effect, the bottom surface of the outer groove 333 may also be inclined.
当中心转轴310上配置的动密封环类型为同时具有内沟槽331和外沟槽333的动密封环330时,参见图10所示,动密封环330的外侧可选择性的取消遮挡环150的设置。When the type of dynamic seal ring configured on the central shaft 310 is a dynamic seal ring 330 having both an inner groove 331 and an outer groove 333, as shown in FIG. setting.
实施例四Embodiment Four
参见图14,揭示了根据本发明的一个实施例用于保持晶圆的晶圆保持装置。晶圆保持装置包括卡盘400和旋转轴500,旋转轴500根据具体工艺设计采用实施一、实施二或实施例三中任意旋转轴。旋转轴500的中心转轴510连接并带动卡盘400转动。卡盘400用于保持晶圆w,卡盘400内部设置有出气管道410。Referring to FIG. 14 , a wafer holding device for holding a wafer according to one embodiment of the present invention is disclosed. The wafer holding device includes a chuck 400 and a rotating shaft 500, and the rotating shaft 500 adopts any rotating shaft in Embodiment 1, Embodiment 2 or Embodiment 3 according to the specific process design. The central rotating shaft 510 of the rotating shaft 500 is connected to and drives the chuck 400 to rotate. The chuck 400 is used to hold the wafer w, and an air outlet duct 410 is arranged inside the chuck 400 .
旋转轴500的进气管道511的出气口连通卡盘400的出气管道410,较佳地,旋转轴500的进气管道511与出气管道410一一对应,即一个进气管道511为一个出气管道410提供气体。在具体工艺中,卡盘400内部可以设置一个或一个以上的出气管道410,例如图14示出的晶圆保持装置,卡盘400内设置有两个出气管道410。The air outlet of the air inlet pipe 511 of the rotating shaft 500 is connected to the air outlet pipe 410 of the chuck 400. Preferably, the air inlet pipe 511 of the rotating shaft 500 corresponds to the air outlet pipe 410 one by one, that is, one air inlet pipe 511 is one air outlet pipe 410 provides gas. In a specific process, one or more gas outlet ducts 410 may be provided inside the chuck 400 , such as the wafer holding device shown in FIG. 14 , and two gas outlet ducts 410 are provided in the chuck 400 .
在一实施例中,卡盘400的上表面具有若干个伯努利出气孔,相应地,卡盘400内部可以设置一个出气管道410,出气管道410用于为卡盘400上的伯努利出气孔提供气体,用于使晶圆w以悬浮状态保持在卡盘400上。In one embodiment, the upper surface of the chuck 400 has several Bernoulli air outlet holes, correspondingly, an air outlet duct 410 can be arranged inside the chuck 400, and the air outlet duct 410 is used for the Bernoulli outlet on the chuck 400. The air holes provide gas for keeping the wafer w on the chuck 400 in a suspended state.
在另一实施例中,卡盘400的上表面具有若干个伯努利出气孔和若干个抬升出气孔,相应地,卡盘400内部可以设置两个出气管道410,其中一个出气管道410用于为卡盘400上的伯努利出气孔提供气体,用于使晶圆w以悬浮状态保持在卡盘400上;另一个出气管道410用于为卡盘400上的抬升出气孔提供气体,用于将保持在卡盘400上的晶圆w吹浮至取放片高度。In another embodiment, the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, correspondingly, two air outlet ducts 410 can be arranged inside the chuck 400, one of which is used for Provide gas for the Bernoulli vent hole on the chuck 400, for keeping the wafer w on the chuck 400 in a suspended state; another gas outlet pipe 410 is used for providing gas for the lift vent hole on the chuck 400, for To float the wafer w held on the chuck 400 to the height of the pick-and-place sheet.
在又一实施例中,卡盘400的上表面具有若干个伯努利出气孔和若干个抬升出气孔,且在卡盘400的边缘设置有至少一组由气缸驱动的夹紧销,相应地,卡盘400内部可以设置三个出气管道410,其中一个出气管道410用于为卡盘400上的伯努利出气孔提供气体,用于使晶圆w以悬浮状态保持在卡盘400上;一个出气管道410用于为卡盘400上的抬升出气孔提供气体,用于将保持在卡盘400上的晶圆w吹浮至取放片高度;一个出气管道410用于为卡盘400上至少一组夹紧销的气缸提供气体,用于驱动气缸夹紧或释放晶圆w。In yet another embodiment, the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, and at least one set of clamping pins driven by cylinders is arranged on the edge of the chuck 400, correspondingly , three gas outlet pipes 410 can be arranged inside the chuck 400, one of which is used to provide gas for the Bernoulli air outlet on the chuck 400, and is used to keep the wafer w on the chuck 400 in a suspended state; A gas outlet pipe 410 is used to provide gas for the lifting air hole on the chuck 400, and is used to blow the wafer w held on the chuck 400 to the height of the pick-and-place sheet; The air cylinders of at least one set of clamping pins provide gas for driving the cylinders to clamp or release the wafer w.
综上所述,本发明通过上述实施方式及相关图式说明,己具体、详实的揭露了相关技术,使本领域的技术人员可以据以实施。而以上所述实施例只是用来说明本发明,而不是用来限制本发明的,本发明的权利范围,应由本发明的权利要求来界定。至于本文中所述元件数目的改变或等效元件的代替等仍都应属于本发明的权利范围。To sum up, the present invention has specifically and detailedly disclosed related technologies through the above-mentioned embodiments and related drawings, so that those skilled in the art can implement them accordingly. The above-mentioned embodiments are only used to illustrate the present invention, rather than to limit the present invention, and the scope of rights of the present invention should be defined by the claims of the present invention. Changes in the number of elements described herein or substitution of equivalent elements should still fall within the scope of the present invention.

Claims (15)

  1. 一种旋转轴,与用于保持晶圆的卡盘连接,其特征在于,包括:A rotary shaft coupled to a chuck for holding a wafer, comprising:
    中心转轴,所述中心转轴内部设置有进气管道;A central rotating shaft, the central rotating shaft is provided with an air intake pipe inside;
    至少一个第一配气环,所述至少一个第一配气环同轴套设在中心转轴的外侧,且所述至少一个第一配气环与中心转轴之间具有间隙,所述至少一个第一配气环内部设置有供气管道,所述至少一个第一配气环的供气管道与中心转轴的进气管道相连通,用于向旋转状态的中心转轴供应气体;At least one first gas distribution ring, the at least one first gas distribution ring is coaxially sleeved on the outside of the central shaft, and there is a gap between the at least one first gas distribution ring and the central shaft, the at least one first gas distribution ring A gas distribution ring is provided with a gas supply pipe inside, and the gas supply pipe of the at least one first gas distribution ring communicates with the air intake pipe of the central rotating shaft, and is used to supply gas to the rotating central rotating shaft;
    至少一个动密封环,所述至少一个动密封环同轴固定在中心转轴的外侧,且所述至少一个动密封环与所述至少一个第一配气环交替设置,动密封环与第一配气环相对的端面上设置有若干个内沟槽,内沟槽用于收纳来自第一配气环和中心转轴之间的间隙泄露的气体,中心转轴旋转时使该泄露的气体在内沟槽内形成第一高压密封区,以阻止第一配气环的气体泄漏,其中,第一高压密封区内的气压高于第一配气环与中心转轴之间的间隙内的气压。At least one dynamic sealing ring, the at least one dynamic sealing ring is coaxially fixed on the outside of the central rotating shaft, and the at least one dynamic sealing ring is alternately arranged with the at least one first gas distribution ring, and the dynamic sealing ring and the first distribution ring are arranged alternately. There are several inner grooves on the opposite end face of the gas ring, the inner grooves are used to accommodate the leaked gas from the gap between the first gas distribution ring and the central rotating shaft, and the leaked gas is made into the inner grooves when the central rotating shaft rotates. A first high-pressure sealing area is formed inside to prevent gas leakage of the first gas distribution ring, wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring and the central rotating shaft.
  2. 根据权利要求1所述的旋转轴,其特征在于,所述至少一个动密封环与中心转轴之间设置有密封圈。The rotating shaft according to claim 1, wherein a sealing ring is provided between the at least one dynamic sealing ring and the central rotating shaft.
  3. 根据权利要求1所述的旋转轴,其特征在于,所述若干个内沟槽位于动密封环的内边缘,并沿动密封环的旋转方向以第一切向角呈环形阵列排布,第一切向角为内沟槽与动密封环径向的夹角。The rotating shaft according to claim 1, wherein the plurality of inner grooves are located on the inner edge of the dynamic sealing ring, and are arranged in a circular array at a first tangential angle along the rotation direction of the dynamic sealing ring, and the second The tangential angle is the included angle between the inner groove and the radial direction of the dynamic sealing ring.
  4. 根据权利要求3所述的旋转轴,其特征在于,所述第一切向角为0°~30°。The rotating shaft according to claim 3, wherein the first tangential angle is 0°-30°.
  5. 根据权利要求3所述的旋转轴,其特征在于,所述内沟槽靠近中心转轴一端的宽度大于远离中心转轴一端的宽度。The rotating shaft according to claim 3, characterized in that, the width of the end of the inner groove close to the central rotating shaft is greater than the width of the end away from the central rotating shaft.
  6. 根据权利要求3所述的旋转轴,其特征在于,所述内沟槽的底面为水平面或斜面。The rotating shaft according to claim 3, wherein the bottom surface of the inner groove is a horizontal plane or an inclined plane.
  7. 根据权利要求1所述的旋转轴,其特征在于,还包括至少一个第二配气环,所述至少一个第二配气环同轴套设在中心转轴的外侧,所述至少一个第二配气环与中心转轴之间具有间隙,所述至少一个动密封环与所述至少一个第二配气环或至少一个第一配气环交替设置,所述至少一个第二配气环内部设置有供气管道,所述至少一个第二配气环的供气管道与中心转轴的进气管道相连通,用于向静止状态的中心转轴供应气体;The rotating shaft according to claim 1, further comprising at least one second gas distribution ring, the at least one second gas distribution ring is coaxially sleeved on the outside of the central rotating shaft, and the at least one second gas distribution ring is There is a gap between the gas ring and the central shaft, the at least one dynamic sealing ring is arranged alternately with the at least one second gas distribution ring or at least one first gas distribution ring, and the at least one second gas distribution ring is provided with A gas supply pipeline, the gas supply pipeline of the at least one second gas distribution ring communicates with the air intake pipeline of the central rotating shaft, and is used to supply gas to the central rotating shaft in a static state;
    动密封环与第二配气环相对的端面上的内边缘设置有台阶结构。The inner edge of the end face of the dynamic sealing ring opposite to the second gas distribution ring is provided with a stepped structure.
  8. 根据权利要求7所述的旋转轴,其特征在于,所述动密封环与第一配气环或第二配气环相对的端面上设置有若干个外沟槽,外沟槽用于收纳外部的环境气体,中心转轴旋转时使该环境气体在外沟槽内形成第二高压密封区,其中,第二高压密封区的气压高于外部的环境气压,且低于第一高压密封区。The rotating shaft according to claim 7, wherein the end surface of the dynamic sealing ring opposite to the first gas distribution ring or the second gas distribution ring is provided with several outer grooves, and the outer grooves are used to accommodate the external When the central shaft rotates, the ambient gas forms a second high-pressure sealing area in the outer groove, wherein the pressure of the second high-pressure sealing area is higher than the external ambient air pressure and lower than that of the first high-pressure sealing area.
  9. 根据权利要求8所述的旋转轴,其特征在于,所述若干外沟槽位于动密封环的外边缘,并沿动密封环的旋转方向以第二切向角呈环形阵列排布,第二切向角为外沟槽与动密封环径向的夹角。The rotating shaft according to claim 8, characterized in that, the plurality of outer grooves are located on the outer edge of the dynamic seal ring and are arranged in an annular array at a second tangential angle along the rotation direction of the dynamic seal ring, the second The tangential angle is the included angle between the outer groove and the radial direction of the dynamic sealing ring.
  10. 根据权利要求9所述的旋转轴,其特征在于,所述第二切向角为0°~30°。The rotating shaft according to claim 9, characterized in that, the second tangential angle is 0°-30°.
  11. 根据权利要求8所述的旋转轴,其特征在于,所述外沟槽远离中心转轴的一端的宽度大于靠近中心转轴一端的宽度。The rotating shaft according to claim 8, characterized in that, the width of the end of the outer groove away from the central rotating shaft is larger than the width of the end close to the central rotating shaft.
  12. 根据权利要求8所述的旋转轴,其特征在于,所述外沟槽的底面为水平面或斜面。The rotating shaft according to claim 8, wherein the bottom surface of the outer groove is a horizontal plane or an inclined plane.
  13. 根据权利要求7所述的旋转轴,其特征在于,还包括遮挡环,所述遮挡环设置在动密封环的径向外围,用以阻止外部的环境气体进入第一配气环或第二配气环。The rotating shaft according to claim 7, further comprising a shielding ring, the shielding ring is arranged on the radial periphery of the dynamic sealing ring to prevent external ambient gas from entering the first gas distribution ring or the second gas distribution ring. air ring.
  14. 根据权利要求1所述的旋转轴,其特征在于,还包括遮挡环,所述遮挡环设置在动密封环的径向外围,用以阻止外部的环境气体进入第一配气环。The rotating shaft according to claim 1, further comprising a shielding ring, the shielding ring is arranged on the radial periphery of the dynamic sealing ring, and is used to prevent external ambient gas from entering the first gas distribution ring.
  15. 一种晶圆保持装置,其特征在于,包括:A wafer holding device is characterized in that it comprises:
    卡盘,所述卡盘用于保持晶圆,所述卡盘内部设有出气管道;A chuck, the chuck is used to hold the wafer, and the inside of the chuck is provided with an air outlet pipe;
    如权利要求1至14任一项所述的旋转轴,所述卡盘固定在旋转轴的顶部;The rotating shaft according to any one of claims 1 to 14, wherein the chuck is fixed on the top of the rotating shaft;
    其中,所述卡盘内部的出气管道与所述旋转轴内部的进气管道相连通。Wherein, the air outlet pipe inside the chuck communicates with the air inlet pipe inside the rotating shaft.
PCT/CN2022/133993 2021-12-09 2022-11-24 Wafer holding device and rotating shaft thereof WO2023103794A1 (en)

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CN202111497672.4A CN116259571A (en) 2021-12-09 2021-12-09 Wafer holding device and rotation shaft thereof

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086566A (en) * 2001-09-07 2003-03-20 Supurauto:Kk Apparatus and method for treating substrate
CN103629360A (en) * 2013-12-03 2014-03-12 北京航空航天大学 Gas end cylindrical surface combined sealing device provided with spiral groove
CN107615443A (en) * 2014-06-06 2018-01-19 盛美半导体设备(上海)有限公司 Remove the apparatus and method of wafer rear edge film
US20190203840A1 (en) * 2016-09-14 2019-07-04 Eagle Industry Co., Ltd. Mechanical seal
CN111911633A (en) * 2020-07-03 2020-11-10 江苏海洋大学 Novel self-balancing type active leakage-inhibiting labyrinth sealing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086566A (en) * 2001-09-07 2003-03-20 Supurauto:Kk Apparatus and method for treating substrate
CN103629360A (en) * 2013-12-03 2014-03-12 北京航空航天大学 Gas end cylindrical surface combined sealing device provided with spiral groove
CN107615443A (en) * 2014-06-06 2018-01-19 盛美半导体设备(上海)有限公司 Remove the apparatus and method of wafer rear edge film
US20190203840A1 (en) * 2016-09-14 2019-07-04 Eagle Industry Co., Ltd. Mechanical seal
CN111911633A (en) * 2020-07-03 2020-11-10 江苏海洋大学 Novel self-balancing type active leakage-inhibiting labyrinth sealing device

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