CN206562455U - A kind of MOCVD device graphite plate - Google Patents
A kind of MOCVD device graphite plate Download PDFInfo
- Publication number
- CN206562455U CN206562455U CN201720307206.8U CN201720307206U CN206562455U CN 206562455 U CN206562455 U CN 206562455U CN 201720307206 U CN201720307206 U CN 201720307206U CN 206562455 U CN206562455 U CN 206562455U
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- Prior art keywords
- disk body
- wafer
- plate washer
- annular
- annular plate
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 38
- 239000010439 graphite Substances 0.000 title claims abstract description 38
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Abstract
The utility model belongs to technical field of semiconductors, and in particular to a kind of MOCVD device graphite plate, and it includes a disk body, it is characterised in that：The disk body upper surface is provided with annular plate washer, the outer annular diameter of the annular plate washer is more than or equal to the diameter of the disk body, the height of the plate washer is gradually risen by inner side to outside, and the disk body and/or the baffle upper surface are provided with several wafer grooves for placing wafer substrate.The utility model in disk body upper surface by setting an annular plate washer to be blocked in during wafer, and disk body edge wafer groove air-flow is pumped too fast phenomenon, and then to improve the long brilliant speed of edge wafer groove wafer.The upper surface of plate washer is arranged to inclined plane, and the madial wall of annular plate washer is extended into wafer groove, is on the one hand to improve the long brilliant speed of each circle wafer, is on the other hand also possible to prevent the film flying phenomenon of wafer in wafer groove.
Description
Technical field
The utility model belongs to technical field of semiconductors, more particularly to a kind of MOCVD device graphite plate.
Background technology
In LED manufacturing enterprises, it is indispensable and be important accessory, its structure that graphite plate has become MOCVD
Design, directly influence the performance that extension builds chip growth, especially uniformity.Secondly, the quality of graphite plate design, can also
The cost of LED manufacturing enterprises is had influence on, and then has influence on the competitiveness of product in market.
As shown in Figure 1, conventional graphite plate conventional at present is that several wafer grooves 110 are set on disk body 100,
But there is larger defect in this graphite plate design, and the adjustment for passing through technique is difficult to improve during MOCVD uses.
Existing MOCVD device takes pipeline section premix merging to spray gaseous mixture and MO sources by top cover 200, in the contained lining of graphite plate
Basal surface reflects the mode for GaN epitaxy wall crystal layer of growing up through high temperature adsorption, and because MOCVD needs low-pressure growth environment,
Reative cell rear end is connected with two groups of bodies of pump 400（Ebara）Progress is continual to vacuumize action so that MOCVD（To lead at present
Exemplified by stream Veeco K465i types）The flow pattern of reaction chamber inwall is unable to reach preferable uniformity, as shown in Figure 2,
From reative cell top cover 200 spray and under air-flow exist, drive graphite plate disk body 100 in the suction of Ebara pumps 400 and rotary shaft 300
In rotation process, a kind of shape of similar spiral centrum is formed, this is resulted on whole graphite plate interface, different concentric circles positions
The GaN epitaxy put is built crystals growth speed and had differences, general, can have disk center on edge bearing of trend, long crystalline substance speed
It is increasingly slower, and drastically fall down in the brilliant speed of graphite plate border area length, because of air-flow at disk edge because Ebara suctions in rear end are drawn
The air-flow risen is more thin, and even more serious, existing wafer groove 110 can be led when can not provide enough centrifugal force cancels centrifugal force
Cause wafer to fly away from graphite plate, cause reative cell to damage or tail gas pipeline blockage.
The content of the invention
In order to solve the above technical problems, the utility model provides a kind of MOCVD device graphite plate, including a disk body, its
It is characterised by：The disk body upper surface is provided with annular plate washer, and the outer annular diameter of the annular plate washer is more than or equal to described
The diameter of disk body, the height of the plate washer is gradually risen by inner side to outside, and the disk body and/or the baffle upper surface are set
There are several wafer grooves for placing wafer substrate.
It is preferred that, during wafer growth, the annular plate washer delays disk body edge airflow to be pumped speed, increases disk
The long brilliant speed of wafer in body edge wafer groove.
It is preferred that, the annular plate washer is located at the edge of the disk body, and the wafer groove is located at the disk body upper surface.
It is preferred that, the madial wall of the annular shelves is located at the somewhere at the disk body center to the disk body edge, described
Wafer groove is located at the annular baffle upper surface.
It is preferred that, the madial wall of the annular plate washer is located at the disk body center to the somewhere at the disk body edge, portion
Wafer groove is divided to be located at the annular baffle upper surface, part wafer groove is then located at the disk body upper surface.
It is preferred that, the upper surface of the annular plate washer is inclined plane.
It is preferred that, the annular plate washer madial wall is the arcuate structure of indent.
It is preferred that, the annular plate washer is integrally formed with the disk body, or the plate washer is installed on the disk body upper table
Face.
It is preferred that, the annular plate washer is graphite plate washer or carborundum plate washer or graphene plate washer.
It is preferred that, the inclination angle of the inclined plane is 2 ° ~ 5 °.
It is preferred that, the height of the annular plate washer is 1 ~ 3um.
The utility model in disk body upper surface by setting an annular plate washer to be blocked in during wafer, and disk body edge is brilliant
Air-flow is pumped too fast phenomenon at round recessed, and then to improve the long brilliant speed of edge wafer groove wafer.Plate washer
Upper surface is arranged to inclined plane, and the madial wall of annular plate washer is extended into wafer groove, is on the one hand to improve each circle wafer
Long brilliant speed, be on the other hand also possible to prevent the film flying phenomenon of wafer in wafer groove.
Brief description of the drawings
Fig. 1 is Graphite disk structure schematic diagram in the prior art.
Fig. 2 is part MOCVD and Graphite disk structure schematic diagram in the prior art.
Fig. 3 is the graphite plate top view of the utility model embodiment 1.
Fig. 4 is the graphite plate side view of the utility model embodiment 1.
Fig. 5 is the graphite plate side view of the utility model embodiment 2.
Fig. 6 is the graphite plate side view of the utility model embodiment 3.
Fig. 7 is the graphite plate side view of the utility model embodiment 4.
Accompanying drawing is marked：
100：Disk body；110：Groove； 200：Top cover；300：Rotary shaft；400：Pump；500：Baffle plate；510：Inclined plane；
520：Arcuate structure.
Embodiment
The utility model is more specifically described by way of example referring to the drawings in the following passage.According to following explanation and power
Sharp claim, advantages and features of the present utility model will become apparent from.It should be noted that, accompanying drawing using very simplified form and
Non- accurately ratio is used, only to convenient, lucidly aid illustration the utility model embodiment purpose.
Embodiment 1
Referring to accompanying drawing 3 ~ 4, a kind of MOCVD device graphite plate, including a disk body 100, the upper surface of disk body 100 is additionally provided with
One annular plate washer 500, the annular plate washer 500 on the surface of disk body 100 slow down the speed that disk body frontside edge air-flow is pumped.Annular
Plate washer 500 be located at disk body 100 outer edge, its outer annular diameter be more than or equal to disk body 100 diameter, the present embodiment preferably its
Outer annular diameter is equal to the diameter of disk body 100.The upper surface of plate washer 500 into a horizontal plane, or baffle plate 500 height by inner side extremely
Outside gradually rises so that the upper surface of annular plate washer 500 is an inclined plane 510, and its angle of inclination is 2 ° ~ 5 °.Annular plate washer
500 madial wall is the arcuate structure 520 of indent, and the height of annular plate washer 500 is 1 ~ 3um.The inclined upper table of annular plate washer 500
Face and the madial wall of indent arcuate structure 520, are prevented effectively from because air-flow in edge barrier produces small vortex, and then have influence on whole
The uniformity of body atmosphere, in lifting, the uniformity of outer ring wafer wavelength.Annular plate washer 500 is once or post forming is in disk
The surface of body 100, its material with disk body 100 can be with identical, can also be different, material can for graphite, can also be by carborundum
Or graphene, the present embodiment preferably both materials are graphite.
The non-overlay area of plate washer 500 in the upper surface of disk body 100 is provided with the wafer groove 110 that several place wafer substrate,
Wafer groove 110 is distributed using the center of disk body 100 as the center of circle in concentric circles, for purposes of illustration only, the present embodiment is according to apart from disk body
All 110 points of wafer grooves are inner ring, centre circle and outer ring by the distance at 100 centers.
During wafer growth, when top cover mixed airflow is sprayed onto the graphite panel surface in the present embodiment, because of pump 40
Suction formed gaseous mixture can greatly improve in graphite plate surface distributed inhomogeneities, especially in graphite plate edge airflow
Drastically the phenomenon of reduction can be eliminated, and the annular plate washer 500 on the surface of disk body 100 slow down the speed that disk body frontside edge air-flow is pumped
The madial wall of rate, inclined upper surface and indent arcuate structure 520, is prevented effectively from because air-flow in edge barrier produces small whirlpool
Stream, and then has influence on the uniformity of overall atmosphere, in lifting, the uniformity of outer ring wafer wavelength.
On the other hand, the design of annular plate washer 500 is because slow down the speed that air-flow is sucked, so that MO sources and respectively
The loss of kind of gas is reduced, and greatly promotes the service efficiency of various MO sources and gas, thus substantially reduce continuously grow into
This.Certainly, with the lifting of MO sources service efficiency, the residue in MOCVD chambers can then be reduced, so as to lift reaction cavity
Cleanliness factor, uncaps the cycle cleared up and safeguarded so as to greatly prolong MOCVD cavitys, so as to lift the production capacity output of manufacturing enterprise.
Embodiment 2
Referring to accompanying drawing 5, the madial wall of annular plate washer 500 is located at the center of disk body 100, and annular plate washer in the present embodiment
500 upper surface is that several crystalline substances for placing wafer substrate are provided with the inclined plane 510 of a wedge shape, wedge-shaped inclined plane 510
Round recessed 110, annular plate washer 500 is integrally formed with disk body 100, and its material is graphite and upper surface coats one layer of silicon nitride and applied
Layer, and the bottom surface of each wafer groove 110 is inclined plane 510, the inclination at its angle of inclination and the upper surface of annular plate washer 500
Angle is identical, is 2 ° ~ 5 °.Inclined wafer groove 110 provides what card support force vertical enough brought to weaken high rotating speed
Centrifugal force, can high degree reduction bias or film flying phenomenon.Meanwhile, wedge-shaped annular plate washer 500, which is also functioned to, to be slowed down air-flow and is taken out
The speed walked, it is to avoid edge wavelength is partially long, improves wavelength uniformity.
Embodiment 3
Referring to accompanying drawing 6, the present embodiment and the difference of embodiment 2 are, the wafer groove 110 on annular plate washer 500
Bottom is horizontal structure.
Embodiment 4
Referring to accompanying drawing 7, the madial wall of annular plate washer 500 is located at the center of disk body 100 to disk body frontside edge in the present embodiment
Somewhere, part wafer groove 110 is located at the annular upper surface of plate washer 500, and part wafer groove 110 is then located at the disk body
100 upper surfaces.Specifically, inner ring wafer groove 110 is arranged at the upper surface of disk body 100, remaining respectively encloses wafer groove 110 and is arranged at
The upper surface of annular plate washer 500, the bottom of wafer groove 110 is horizontal structure.
It should be appreciated that above-mentioned specific embodiment is preferred embodiment of the present utility model, model of the present utility model
Enclose and be not limited to the embodiment, all any changes done according to the utility model all belong within protection domain of the present utility model.
Claims (9)
1. a kind of MOCVD device graphite plate, including a disk body, it is characterised in that：The disk body upper surface is provided with annular shelves
Plate, the outer annular diameter of the annular plate washer is more than or equal to the diameter of the disk body, and the height of the plate washer is by inner side to outer
Side gradually rises, and the disk body and/or the baffle upper surface are provided with several wafer grooves for placing wafer substrate.
2. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The annular plate washer is located at institute
The edge of disk body is stated, the wafer groove is located at the disk body upper surface.
3. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The madial wall of the annular shelves
Somewhere positioned at the disk body center to the disk body edge, the wafer groove is located at the annular baffle upper surface.
4. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The inner side of the annular plate washer
Wall is located at the somewhere at the disk body center to the disk body edge, and part wafer groove is located at the annular baffle upper surface,
Part wafer groove is then located at the disk body upper surface.
5. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The upper table of the annular plate washer
Face is inclined plane.
6. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The annular plate washer madial wall
For the arcuate structure of indent.
7. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The annular plate washer with it is described
Disk body is integrally formed, or the plate washer is installed on the disk body upper surface.
8. a kind of MOCVD device graphite plate according to claim 5, it is characterised in that：The inclination angle of the inclined plane is
2°~5°。
9. a kind of MOCVD device graphite plate according to claim 1, it is characterised in that：The height of the annular plate washer
For 1 ~ 3um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720307206.8U CN206562455U (en) | 2017-03-28 | 2017-03-28 | A kind of MOCVD device graphite plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720307206.8U CN206562455U (en) | 2017-03-28 | 2017-03-28 | A kind of MOCVD device graphite plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206562455U true CN206562455U (en) | 2017-10-17 |
Family
ID=60032699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720307206.8U Active CN206562455U (en) | 2017-03-28 | 2017-03-28 | A kind of MOCVD device graphite plate |
Country Status (1)
| Country | Link |
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| CN (1) | CN206562455U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111926305A (en) * | 2020-08-12 | 2020-11-13 | 厦门乾照半导体科技有限公司 | Carrying disc for LED wafer manufacturing process |
| CN112458531A (en) * | 2020-09-30 | 2021-03-09 | 华灿光电（浙江）有限公司 | Graphite base and MOCVD equipment |
| CN113279056A (en) * | 2021-03-31 | 2021-08-20 | 华灿光电（浙江）有限公司 | Graphite substrate and method for producing same |
| CN113652667A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Graphite substrate for improving wavelength uniformity of epitaxial wafer |
-
2017
- 2017-03-28 CN CN201720307206.8U patent/CN206562455U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111926305A (en) * | 2020-08-12 | 2020-11-13 | 厦门乾照半导体科技有限公司 | Carrying disc for LED wafer manufacturing process |
| CN112458531A (en) * | 2020-09-30 | 2021-03-09 | 华灿光电（浙江）有限公司 | Graphite base and MOCVD equipment |
| CN112458531B (en) * | 2020-09-30 | 2021-12-03 | 华灿光电（浙江）有限公司 | Graphite base and MOCVD equipment |
| CN113279056A (en) * | 2021-03-31 | 2021-08-20 | 华灿光电（浙江）有限公司 | Graphite substrate and method for producing same |
| CN113652667A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Graphite substrate for improving wavelength uniformity of epitaxial wafer |
| CN113652667B (en) * | 2021-06-22 | 2023-03-24 | 华灿光电（浙江）有限公司 | Graphite substrate for improving wavelength uniformity of epitaxial wafer |
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