CN207227547U - For the graphite plate in MOCVD device - Google Patents
For the graphite plate in MOCVD device Download PDFInfo
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- CN207227547U CN207227547U CN201720956148.1U CN201720956148U CN207227547U CN 207227547 U CN207227547 U CN 207227547U CN 201720956148 U CN201720956148 U CN 201720956148U CN 207227547 U CN207227547 U CN 207227547U
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- substrate
- graphite plate
- groove
- mocvd device
- protrusion
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Abstract
The utility model provides a kind of graphite plate being used in MOCVD device, including multiple grooves for being used to place substrate, it is provided with the side wall of the groove by the side wall towards the projecting inward projective structure of the groove, the projective structure includes one or more protrusions, the protrusion causes the substrate under the action of the graphite plate rotates centrifugal force, the side wall of the substrate only with the protrusion contacts, and has gap with the recess sidewall.The utility model sets projective structure in the recess sidewall of graphite plate, so that the substrate is under the action of the graphite plate rotates centrifugal force, the side wall of the substrate only with the protrusion contacts, and there is gap with the recess sidewall, so that the substrate and recess sidewall edge are changed to point contact by original Full connected, reduce influence of the centrifugal force to substrate and reduce the temperature of edges of substrate.The utility model can be effectively improved the wavelength uniformity for the substrate slice being positioned in groove, improve yield.
Description
Technical field
A kind of semiconductor manufacturing facility is the utility model is related to, more particularly to a kind of graphite being used in MOCVD device
Disk.
Background technology
Graphite plate is very important accessory in MOCVD device, and currently used graphite plate is all circular, on graphite plate
Some circular grooves are distributed with, these grooves are used to place substrate.Graphite plate is made of high purity graphite, and is plated on surface
There are SiC coatings.Epitaxial process, in the reaction chamber of MOCVD, carries out the graphite plate for being contained with substrate by heating system
Radiant heating, controls temperature, such temperature control precision is generally up to 0.2 DEG C or lower by thermocouple and temperature controller.
As shown in Figure 1, the graphite boat includes multiple grooves 101, substrate 102 is positioned over for a kind of design of existing graphite plate
In the groove 101, the material of the substrate is largely Al2O3, some uses Si, SiC and SiO2, with iii-v
The lattice husband of nitride epitaxial layer matches somebody with somebody the difference with thermal coefficient of expansion, and warpage can all occur for epitaxial wafer during epitaxial growth,
As shown in Figure 1.Epitaxial wafer, which produces, to be stuck up by causing slice, thin piece uneven heating even, is had an impact to epitaxial layer quality, and iii-v nitrogenizes
Thing shine epitaxial wafer wavelength versus temperature it is more sensitive, be easy to cause that wavelength difference in epitaxial wafer is larger, can be to follow-up chip
Processing procedure and the work of point side cause time and cost be significantly increased and the reduction of yield.
In order to overcome drawbacks described above, disclosed in the patent application of Application No. 201521131002.0 in a kind of MOCVD
For placing the graphite plate of substrate, as shown in Fig. 2, the graphite plate includes graphite plate disk body, it is equipped with graphite plate disk body multiple
For placing the circular groove of substrate, each groove includes：Groove body, bottom surface, the first side wall, round platform and second sidewall, its
In, bottom surface be positioned at groove body bottom, and bottom surface for it is annular, upward arch is raised；The first side wall deviates from graphite plate from bottom edge
Disk body bending extension forms, and round platform is formed from the top outward bending extension of the first side wall, and second sidewall deviates from from round platform edge
The bending extension of graphite plate disk body forms, and the top of second sidewall connects with groove body surface inward flange.This application efficiently solves lining
Due to the thermal field uneven distribution that epitaxial wafer warpage is brought during the III-V nitride outgrowth of bottom, improve substrate iii-v
The quality of nitride epitaxial growth and wavelength uniformity in extension and piece.
However, as shown in figure 3, both the above graphite plate is respectively provided with defect：Since in surrounding procedure, graphite plate is at a high speed
Rotate, the substrate in groove is influenced by centrifugal force, its side wall for deviateing graphite disk center there can be larger face in the side wall of groove
Long-pending contact (as shown in Fig. 3 dotted-line ellipse frames region), causes the position of contact to be heated excessive, and causes III-V nitride
The quality of epitaxial growth and substrate center has larger difference.Fig. 4 be illustrated within graphite plate from graphite disk center difference away from
From 3 grooves in the position of luminous extension that grows and wavelength plot figure, as seen from the figure, the wavelength of edges of substrate is significantly
The scope of decline about 15mm, causes wavelength to have the difference of 30nm in this region, leverages the uniform of wavelength in piece
Property.
Based on the above, there is provided a kind of stone being used in MOCVD device that can effectively improve substrate epitaxial uniformity
Disc structure is necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide one kind to be used for MOCVD device
In graphite plate, for solving in the prior art, substrate causes the equal of wavelength in piece since centrifugal force acts in graphite plate groove
The problem of even property is poor.
In order to achieve the above objects and other related objects, the utility model provides a kind of graphite being used in MOCVD device
Disk, the graphite plate include it is multiple be used to place the grooves of substrate, be provided with the side wall of the groove by the side wall towards described
The projecting inward projective structure of groove, the projective structure include one or more protrusions, and the protrusion causes the substrate
Under the action of the graphite plate rotates centrifugal force, the side wall of the substrate only with the protrusion contacts, and with the groove
Side wall has gap.
Preferably, the projective structure includes a protrusion, and the protrusion is arranged in central axial direction, its
In, the direction of centrifugal force suffered by the substrate when central axial direction is the graphite disc spins.
Preferably, the projective structure includes multiple protrusions, and the multiple projection is distributed in the central axis side
To both sides, wherein, the direction of centrifugal force suffered by the substrate when central axial direction is the graphite disc spins.
Preferably, the projective structure includes multiple protrusions, and the multiple projection is distributed in the central axis side
Both sides that are upward and being distributed in the central axial direction, wherein, the central axial direction is the graphite disc spins when institute
State the direction of centrifugal force suffered by substrate.
Further, the multiple protrusions for being distributed in the both sides of the central axial direction are based on the central axis side
To symmetrical.
Further, the protrusion of the both sides of the central axial direction and the line direction of the groove center are distributed in
Angular range between the central axial direction is 10~90 °.
Preferably, the width in the gap is 0.020mm~2.000mm.
Preferably, the protrusion and one kind during the position of the substrate contact is arranged to point contact and line contacts.
Preferably, the shape of the groove is circular or ellipse.
Preferably, the substrate includes silicon substrate, Sapphire Substrate, silicon carbide substrates, II-VI group compound-material substrate
And III-V one kind in compound material substrate.
Preferably, the bottom portion of groove is provided with supporting structure, and the supporting structure is used to support the substrate and causes institute
Stating the bottom surface of substrate and the bottom of the groove has spacing.
Further, the supporting structure is to surround the loop configuration of the recess edge, or the supporting structure includes
It is multiple to be separated by the boss for being distributed in the recess edge.
Further, the altitude range of the supporting structure is 5 μm~1500 μm.
As described above, the graphite plate being used in MOCVD device of the utility model, has the advantages that：
The utility model sets projective structure by the recess sidewall in graphite plate so that the substrate is in the graphite plate
Under the action of rotating centrifugal force, the side wall of the substrate only with the protrusion contacts, and has gap with the recess sidewall,
So that substrate contact with recess sidewall edge is changed to point contact by original Full connected, centrifugal force pair is reduced
The influence of substrate and the temperature for reducing edges of substrate.The utility model can be effectively improved the uniformity of wavelength in piece, improve
Yield, manufactures and designs field in semiconductor manufacturing facility and is with a wide range of applications.
Brief description of the drawings
Fig. 1 is shown as a kind of design structure schematic diagram of existing graphite plate.
Fig. 2 is shown as the design structure schematic diagram of existing another graphite plate.
Fig. 3 is shown as contact schematic diagram of the substrate in rotation process of existing graphite plate with recess sidewall.
Fig. 4 is shown as in the prior art on the graphite plate from being grown in 3 grooves of graphite disk center different distance
The position for the extension that shines and wavelength plot figure.
Fig. 5~Fig. 7 is shown as the structural representation of the graphite plate being used in MOCVD device in the utility model embodiment 1
Figure, wherein, Fig. 6 is shown as the structure diagram at B-B ' sections in Fig. 5, and the structure that Fig. 7 is shown as in Fig. 5 at A-A ' sections is shown
It is intended to.
Fig. 8 is shown as the structure diagram of the graphite plate being used in MOCVD device in the utility model embodiment 2.
Fig. 9 is shown as the structure diagram of the graphite plate being used in MOCVD device in the utility model embodiment 3.
Figure 10 is shown as the utility model and is located on graphite plate from growing in 3 grooves of graphite disk center different distance
The position for the extension that shines and wavelength plot figure.
Component label instructions
201 grooves
202 substrates
203 protrusions
The position of 204 protrusions and the substrate contact
205 supporting structures
D gaps
The direction of F centrifugal force
Embodiment
Illustrate the embodiment of the utility model below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Refer to Fig. 5~Figure 10.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in illustrating then
Component count, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 5~Fig. 7, the present embodiment provides a kind of graphite plate being used in MOCVD device, the graphite plate includes
It is multiple to be used to place the grooves 201 of substrate 202, it is provided with the side wall of the groove 201 by the side wall towards in the groove 201
The projective structure of protrusion, the projective structure include one or more protrusions 203, and the protrusion 203 is so that the substrate
202 under the action of the graphite plate rotates centrifugal force, and the side wall of the substrate 202 is only contacted with the protrusion 203, and with
201 side wall of groove has gap d.
As an example, the projective structure includes multiple protrusions 203, the multiple protrusion 203 be distributed in it is described in
The both sides of heart axis direction, wherein, centrifugal force suffered by the substrate 202 when the central axial direction is the graphite disc spins
Direction (as shown in the arrow F in Fig. 5).
As an example, the protrusion 203 can only be distributed in the substrate 202 be inclined under the action of the centrifugal force it is recessed
The half-circle area (as described in the square wire frame in Fig. 5) of groove 201, and the half-circle area that the substrate 202 deviates can be not provided with
Protrusion 203, to save manufacture cost.
In the present embodiment, the protrusion 203 be only distributed in the substrate 202 be inclined under the action of the centrifugal force it is recessed
The half-circle area of groove 201, the multiple protrusions 203 for being distributed in the both sides of the central axial direction are based on the central axis
Direction is symmetrical.The multiple protrusion 203 is symmetrical, can greatly improve the substrate 202 under the action of the centrifugal force
Balance, so as not to double swerve and cause touching for the substrate 202 and the protrusion 203 or 201 side wall of groove
Hit, so as to greatly improve the service life of the protrusion 203 and groove 201, improve the stability of processing procedure.
As an example, it is distributed in the protrusion 203 of the both sides of the central axial direction and the company at 201 center of groove
Angular range between line direction and the central axial direction is 10~90 °.
As an example, the quantity of the protrusion 203 could be provided as 2,4,6 or 8 etc., with the protrusion
The increase of 203 quantity of portion, the area that the substrate 202 is contacted with protrusion 203 under the action of the centrifugal force is then bigger, what it was fixed
Stability strengthens, but can also affect to the temperature of 202 fringe region of substrate, based on this, the protrusion
The quantity in portion 203 is preferably 2 or 4.As shown in figure 5, in the present embodiment, the projective structure includes 2 protrusions
203, the angle between the line direction at 201 center of the protrusion 203 and the groove and the central axial direction is
45 °, the present embodiment only need set two protrusions 203 can ensure the substrate 202 under the influence of centrifugal force with it is described
201 side wall of groove has certain gap d, and the contact point of the substrate 202 and the protrusion 203 only has two, Ke Yi great
The temperature at 202 edge of substrate is reduced greatly, improves the uniformity of extension, and can guarantee that work of the substrate 202 in centrifugal force
Under, keep it to rock and causing to collide.
Fig. 7 is shown as the cross section structure schematic diagram at A-A ' places in Fig. 5, as shown in fig. 7, as an example, the width of the gap d
Spend has air between 0.020mm~2.000mm, the gap d scope substrate 202 that can make and 201 side wall of groove
Barrier, to reduce the lip temperature of the substrate 202.In the present embodiment, the width of the gap d is 0.2mm, can obtain compared with
Excellent thermal field effect.
Fig. 6 is shown as the cross section structure schematic diagram at A-A ' places in Fig. 5, as shown in fig. 6, as an example, the protrusion 203
The position 204 contacted with the substrate 202 is arranged to one kind in point contact and line contact.For example, the protrusion 203 is cut
Face shape can be that triangle, trapezoidal, rectangle, hemispherical or the protrusion 203 are with the side that the substrate 202 contacts
The arc being adapted with 202 edge of substrate.In the present embodiment, the cross sectional shape of the protrusion 203 is triangle, institute
It is chamfer triangle to state triangle, and the chamfer hypotenuse is contacted with the top margin of the substrate 202, both can guarantee that
The contact area of the protrusion 203 and the substrate 202 is smaller (essentially point contact), moreover, being protruded compared to wedge angle etc.
For portion's structure, the service life of the protrusion 203 can be greatly improved.
As an example, the shape of the groove 201 is circular or ellipse.In the present embodiment, the shape of the groove 201
Shape is circle.
As an example, the substrate 202 includes silicon substrate, Sapphire Substrate, silicon carbide substrates, II-VI group compound material
Expect one kind in substrate and III-V compound material substrate.
As shown in figure 5, as an example, 201 bottom of the groove is provided with supporting structure 205, the supporting structure 205 is used
Cause the bottom surface of the substrate 202 that there is spacing with the bottom of the groove 201 in supporting the substrate 202.The support knot
Structure 205 is the loop configuration around 201 edge of groove, or the supporting structure 205 include it is multiple be separated by be distributed in it is described
The boss at 201 edge of groove.In the present embodiment, the supporting structure 205 for it is multiple be separated by be distributed in 201 edge of groove
Boss, compared to around 201 edge of groove loop configuration, using the boss for being separated by distribution, can further reduce
Contact area between the substrate 202 and groove 201, further improves the thermal field uniformity of the substrate 202.
As an example, the altitude range of the supporting structure 205 is 5 μm~1500 μm.In the present embodiment, the support
The height of structure 205 is 100 μm, this highly may insure that the substrate 202 will not connect in high temperature deformation with 201 bottom of groove
Touch.
Further, according to different 202 types of substrate, the bottom of the groove 201 can be arranged to convex surface or
Concave surface so that it is when substrate 202 deforms upon, its integrally keep with 202 substantially the same distance of substrate, with into one
Step improves the thermal field uniformity of the substrate 202.
Figure 10 is illustrated within the graphite plate of the present embodiment (curve 401) and traditional (curve 301) from graphite disk center
The position of the luminous extension of growth and wavelength plot figure in 3 grooves 201 of different distance, as seen from the figure, the present embodiment
The wavelength at 202 edge of substrate and the wavelength difference at 202 center of substrate have greatly improved compared to traditional, and the utility model can
To be effectively improved wavelength uniformity, yield is improved.
Embodiment 2
As shown in figure 8, the present embodiment provides a kind of graphite plate being used in MOCVD device, its basic structure such as embodiment
1, wherein, it is with the difference of embodiment 1, the projective structure of stating includes a protrusion 203, the protrusion 203
Be arranged in central axial direction, wherein, when the central axial direction is the graphite disc spins substrate 202 it is suffered from
The direction F of mental and physical efforts.The projective structure of the present embodiment only includes a groove 201, can further reduce the substrate 202 with it is convex
Go out the contact area of structure, and the protrusion 203 is arranged at suffered by the substrate 202 on the direction F of centrifugal force, can guarantee that it
It is basicly stable, but compared to multiple protrusions 203 for, it is relatively weak that it fixes the ability of the substrate 202.
Embodiment 3
As shown in figure 9, the present embodiment provides a kind of graphite plate being used in MOCVD device, its basic structure such as embodiment
1, wherein, it is with the difference of embodiment 1, the projective structure includes multiple protrusions 203, the multiple protrusion
203 are distributed in the central axial direction and are distributed in the both sides of the central axial direction, wherein, the central axis side
To for the graphite disc spins when centrifugal force suffered by the substrate 202 direction F.The projective structure of the present embodiment, which both included, to be located at
The protrusion 203 of the direction F of centrifugal force suffered by the substrate 202, and comprising positioned at the convex of the both sides of the central axial direction
Go out portion 203, stability of the substrate 202 when graphite plate rotates can be further improved, improve the service life of the graphite plate.
As described above, the graphite plate being used in MOCVD device of the utility model, has the advantages that：
The utility model sets projective structure by 201 side wall of groove in graphite plate so that the substrate 202 is described
Graphite plate rotate centrifugal force under the action of, the side wall of the substrate 202 is only contacted with the protrusion 203, and with the groove
201 side walls have gap d, so that the contact with 201 sidewall edge of groove of the substrate 202 is changed to by original Full connected
Point contact, reduces influence of the centrifugal force to substrate 202 and reduces the temperature at 202 edge of substrate.The utility model can be with
The uniformity of wavelength in piece is effectively improved, improves yield, manufacturing and designing field in semiconductor manufacturing facility has a wide range of applications
Prospect.
So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by the claim of the utility model.
Claims (13)
1. a kind of graphite plate being used in MOCVD device, it is characterised in that the graphite plate includes multiple for placing substrate
Groove, is provided with the side wall of the groove by the side wall towards the projecting inward projective structure of the groove, the projective structure bag
One or more protrusions are included, the protrusion causes the substrate under the action of the graphite plate rotates centrifugal force, described
The side wall of substrate only with the protrusion contacts, and has gap with the recess sidewall.
2. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The projective structure includes
One protrusion, the protrusion are arranged in central axial direction, wherein, the central axial direction is spiraled for the graphite
The direction of centrifugal force suffered by substrate when turning.
3. the graphite plate according to claim 2 being used in MOCVD device, it is characterised in that：The projective structure includes
Multiple protrusions, the multiple projection are distributed in the both sides of the central axial direction, wherein, the central axial direction is
The direction of centrifugal force suffered by the substrate during graphite disc spins.
4. the graphite plate according to claim 2 being used in MOCVD device, it is characterised in that：The projective structure includes
Multiple protrusions, the multiple projection are distributed in the central axial direction and are distributed in the two of the central axial direction
Side, wherein, the direction of centrifugal force suffered by the substrate when central axial direction is the graphite disc spins.
5. the graphite plate being used in MOCVD device according to claim 3 or 4, it is characterised in that：It is distributed in the center
Multiple protrusions of the both sides of axis direction are based on the central axial direction is symmetrical or mal-distribution.
6. the graphite plate being used in MOCVD device according to claim 3 or 4, it is characterised in that：It is distributed in the center
Angle model between the line direction and the central axial direction of the protrusion of the both sides of axis direction and the groove center
Enclose for 10~90 °.
7. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The width in the gap is
0.020mm~2.000mm.
8. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The protrusion with it is described
The position of substrate contact is arranged to one kind in point contact and line contact.
9. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The shape of the groove is
Circular or ellipse.
10. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The substrate is served as a contrast including silicon
One in bottom, Sapphire Substrate, silicon carbide substrates, II-VI group compound-material substrate and III-V compound material substrate
Kind.
11. the graphite plate according to claim 1 being used in MOCVD device, it is characterised in that：The bottom portion of groove is set
There is supporting structure, the supporting structure is used to support the substrate so that the bottom surface of the substrate and the bottom of the groove have
Spacing.
12. the graphite plate according to claim 11 being used in MOCVD device, it is characterised in that：The supporting structure is
Around the recess edge loop configuration, or the supporting structure include it is multiple be separated by be distributed in the convex of the recess edge
Platform.
13. the graphite plate according to claim 11 being used in MOCVD device, it is characterised in that：The supporting structure
Altitude range is 5 μm~1500 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720956148.1U CN207227547U (en) | 2017-08-02 | 2017-08-02 | For the graphite plate in MOCVD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720956148.1U CN207227547U (en) | 2017-08-02 | 2017-08-02 | For the graphite plate in MOCVD device |
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| Publication Number | Publication Date |
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| CN207227547U true CN207227547U (en) | 2018-04-13 |
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ID=61856413
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| CN201720956148.1U Active CN207227547U (en) | 2017-08-02 | 2017-08-02 | For the graphite plate in MOCVD device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326342A (en) * | 2017-08-02 | 2017-11-07 | 中晟光电设备（上海）股份有限公司 | For the graphite plate in MOCVD device |
| CN109183001A (en) * | 2018-11-27 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to epitaxial growth of semiconductor material growth |
| CN109524336A (en) * | 2018-11-14 | 2019-03-26 | 湖南红太阳光电科技有限公司 | A kind of tubular type PECVD graphite boat structure |
| TWI666349B (en) * | 2018-09-05 | 2019-07-21 | 樺榆國際有限公司 | Method for repairing graphite susceptor |
| CN110331381A (en) * | 2019-06-11 | 2019-10-15 | 康佳集团股份有限公司 | A kind of epitaxial wafer growth furnace, equipment, MOCVD method and epitaxial wafer |
-
2017
- 2017-08-02 CN CN201720956148.1U patent/CN207227547U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326342A (en) * | 2017-08-02 | 2017-11-07 | 中晟光电设备（上海）股份有限公司 | For the graphite plate in MOCVD device |
| TWI666349B (en) * | 2018-09-05 | 2019-07-21 | 樺榆國際有限公司 | Method for repairing graphite susceptor |
| CN109524336A (en) * | 2018-11-14 | 2019-03-26 | 湖南红太阳光电科技有限公司 | A kind of tubular type PECVD graphite boat structure |
| CN109183001A (en) * | 2018-11-27 | 2019-01-11 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to epitaxial growth of semiconductor material growth |
| CN110331381A (en) * | 2019-06-11 | 2019-10-15 | 康佳集团股份有限公司 | A kind of epitaxial wafer growth furnace, equipment, MOCVD method and epitaxial wafer |
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