WO2018205822A1

WO2018205822A1 - Wafer suction device

Info

Publication number: WO2018205822A1
Application number: PCT/CN2018/084067
Authority: WO
Inventors: 冯祥雷
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2017-05-11
Filing date: 2018-04-23
Publication date: 2018-11-15
Also published as: CN108878338B; CN108878338A

Abstract

The present invention provides a wafer suction device for sucking a wafer. The wafer suction device provided in the present invention comprises a first plate. The first plate is provided with a first air extraction region and a second air extraction region connected to a vacuum generation device. The first air extraction region is located in the central region of a wafer suction region, and the second air extraction region is located in the edge region of the wafer suction region. The wafer suction region refers to a region on a first surface of the first plate used for sucking a wafer. In the wafer suction process of the wafer suction device provided in the present invention, the whole force applied to a region from the central region to the edge region of the wafer is even, so that the problems of deformation of the wafer (especially the deformation of the central region of the wafer) due to uneven force between the central region and the edge region and even the opposite direction of the applied force can be reduced or even avoided, and further, the damages due to the deformations or damages due to compression can be reduced or even avoided.

Description

Suction device

Technical field

The present invention relates to the field of semiconductor integrated circuit fabrication, and in particular to a suction device.

Background technique

In the field of semiconductor integrated circuit manufacturing, wafer transfer is a very important process. The wafer is generally circular with front and back sides. By wafer front is meant the side of the wafer that is used to implement the integrated circuit structure. Therefore, it is very important to protect the front side of the wafer from damage during wafer transfer. For this reason, the back side of the wafer is generally selected as the transfer surface of the wafer to be in contact with the transfer mechanism. However, in some epitaxial reaction fields, the back side of the wafer cannot be selected as the transfer surface of the wafer due to the particularity of the process. In this case, the edge area of the front side of the wafer is usually used to contact the transfer mechanism to transfer the wafer, which may be the reason for this operation. It is that an area extending a few millimeters radially inward from the edge of the front surface of the wafer (hereinafter simply referred to as "edge area", also referred to as "transfer area") is generally not used for integrated circuit fabrication.

A typical suction device in the prior art is shown in Figures 1 and 2. Such a suction device generally includes a second plate 101 and a first plate 102, the first plate 102 being superposed below the second plate 101 and the projection of the first plate 102 on the second plate 101 being annular. The bottom surface of the first plate 102 is processed to be inclined from the edge toward the center. Specifically, in the radial half-sectional view of the bottom surface of the first plate 102, the bottom surface of the first plate 102 has a low outer edge and a high inner edge. The line is such that only the edge region of the wafer 107 is in contact with the outer edge region of the bottom surface of the first plate 102. The central portion of the first plate 106 has an evacuation chamber 106, i.e., the inner edge of the first plate 106 surrounds the extraction chamber 106. The pumping chamber 106 communicates with the pumping chamber 104 through the air vent 105, and the pumping chamber 104 communicates with a vacuum generating device (not shown) through the air extracting port 103. At the time of suction, the vacuum generating device communicates with the pumping chamber 106 via the suction port 103, the pumping chamber 104, and the air vent 105, and the vacuum suction force in the pumping chamber 106 is greater than the self-gravity of the wafer 107, thereby adsorbing the wafer 107 and It is fixed to the bottom surface of the first plate 102.

During the suction process of the suction device, the edge of the wafer 107 is in contact with the outer edge region of the bottom surface of the first plate 102, and the central portion of the front surface of the wafer 107 is in contact with the suction chamber 106, so that vacuum suction generated by the vacuum generating device The force acts on the front central portion of the wafer 107, and the edge of the wafer 107 is in contact with the outer edge region of the bottom surface of the first plate 102. Thus, the wafer 107 is subjected to the following forces: 1) vacuum adsorption force in the vertical direction upward 2) Gravity downward in the vertical direction; and in the case where the vacuum suction force is greater than the gravity, it is also subjected to a downward thrust perpendicular to the bottom edge of the first plate 102. The vacuum suction force generated by the vacuum generating device acts on the front central portion of the wafer 107, since the front central portion of the wafer 107 is a suspended structure and is not supported by the bottom surface of the first plate 102, and due to the edge of the wafer 107 and the first plate 102 The outer edge region of the bottom surface is in contact, so that when the vacuum suction force generated by the vacuum generating device acts on the front central region of the wafer 107, the front central portion of the wafer 107 is subjected to an upward vacuum suction force to cause the wafer 107 to move upward. The movement trend, but the edge of the wafer 107 is in contact with the outer edge region of the bottom surface of the first plate 102 to block the wafer 107 from moving upward, thereby causing the central region of the wafer 107 to be deformed upwardly, thereby facilitating the wafer 107 The deformation is damaged or it is easy to form a crush in the edge region of the wafer 107.

In addition, with the above-described structure of the film suction device, when the film is taken from the process chamber, the wafer 107 still has a certain temperature, and there is a certain adhesion between the wafer and the susceptor. In this case, the vacuum generating device generates When the vacuum adsorption force acts on the front central region of the wafer 107, the wafer 107 is not attracted to the horizontally, so that the wafer 107 is inclined to a certain extent with respect to the first plate 102, so that the edge region of the wafer 107 cannot be along. The entire circumference is adhered to the bottom surface of the first plate 102, that is, a relatively closed space between the bottom surface of the first plate 102 and the wafer 107, and a single exhaust hole 105 uniformly distributed in the middle of the first plate 102. There is no guarantee that the wafer 107 will be adsorbed smoothly, causing the wafer to fail or the wafer 107 to fall off during the film transfer.

Therefore, it is necessary to develop a suction device which does not cause a large deformation of the wafer when the wafer is adsorbed, and thus it is difficult to form a crush.

The information disclosed in the Background of the Invention is only intended to provide an understanding of the general background of the invention, and is not to be construed as an admission.

Summary of the invention

The invention provides a suction device which solves the problem that the wafer has a large deformation amount during the adsorption process and is easy to form a crush.

The present invention provides a suction device for adsorbing a wafer, comprising a first plate, the first plate being provided with a first pumping zone and a second pumping zone for communicating with a vacuum generating device, the first The pumping zone is located at a central region of the wafer adsorption zone, and the second pumping zone is located at an edge region of the wafer adsorption zone, wherein the wafer adsorption zone is referred to as a first one of the first plates for adsorption The area of the wafer.

Wherein the first pumping zone comprises a buffering suction chamber formed from a first surface of the first plate toward a second surface of the first plate, and the buffering suction chamber and the vacuum The generating device is connected.

Wherein, in a vertical direction, a bottom end of the side wall of the buffering suction chamber is higher than an outer edge of a bottom surface of the first plate, and in a cross-sectional view through the axis of the first plate, the buffering pumping The line between the bottom end of the side wall of the air chamber and the outer edge of the bottom surface of the first plate is curved or straight.

Wherein, the diameter of the buffering extraction chamber is 7/10 to 9/10 of the diameter of the first plate.

Wherein, the buffering evacuation chamber has a depth of 1 to 2 mm.

Wherein, the first pumping zone further includes a first air venting hole, and the buffering air venting chamber communicates with the vacuum generating device via the first air venting hole.

The number of the first air vent holes is plural, and is arranged in one or more turns along a circumferential direction of a central region of the wafer adsorption region.

Wherein, the plurality of the first evacuation holes located in the same circle are evenly arranged along the circumferential direction of the central region of the wafer adsorption region.

Wherein the distance between the first air venting hole closest to the center of the first plate and the center of the first plate is 1/4 to 5/12 of the diameter of the first plate.

Wherein the second pumping zone comprises a second air vent.

The number of the second air vent holes is plural, and is arranged in one or more turns along the circumferential direction of the edge region of the wafer adsorption region.

Wherein, for each turn, a plurality of the second evacuation holes are evenly arranged along the circumferential direction of the edge region of the wafer adsorption region.

The distance between the second air vent and the outer circumference of the first plate is 5-8 mm.

Wherein, the second surface of the first plate is provided with a pumping chamber, and the pumping chamber is formed by being recessed from the second surface of the first plate facing the first surface and disposed around a central axis of the wafer adsorption region, And communicating with the vacuum generating device and at least one of the first pumping zone and the second pumping zone.

Wherein the suction device further includes a second plate stacked on the second surface of the first plate and having an air suction port thereon, the air suction port and the vacuum generating device, the The first pumping zone and the second pumping zone are in communication.

Wherein the pumping port is in communication with the pumping chamber, and the pumping chamber is in communication with at least one of the first pumping zone and the second pumping zone.

Wherein the diameter of the buffering pumping chamber is larger than the inner diameter of the pumping chamber and smaller than the outer diameter of the pumping chamber, and the depth of the buffering chamber is smaller than the thickness of the first plate and the pumping a difference in depth of the gas chamber; the first suction hole is a through hole located between the buffer suction chamber and the suction chamber and communicating the two.

Wherein the second plate has a protrusion protruding outward in a radial direction thereof near the suction port.

The suction device of the present invention is provided with a first pumping zone acting on the central area of the wafer and a second pumping zone acting on the edge region of the wafer on the first plate, the edge of the front side of the wafer during the suction process The area corresponds to the second pumping zone, and the central area of the front side of the wafer corresponds to the first pumping zone, so that the vacuum suction force generated by the vacuum generating device acts on the central area and the edge area of the front side of the wafer, so that the wafer is in the center Both the region and the edge region are subjected to an upward adsorption force, that is, the wafer is uniformly loaded from the central region to the edge region, thereby reducing or even avoiding the uneven force or even the opposite direction of the force in the central region and the edge region. The problem of wafer deformation (especially deformation of the central region of the wafer) further reduces or even prevents the wafer from being damaged or crushed by the above deformation.

The method of the present invention has other features and advantages, which will be apparent from the drawings and subsequent specific embodiments incorporated herein, or the accompanying drawings and subsequent embodiments. The detailed description is set forth in the accompanying claims

DRAWINGS

The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the embodiments of the invention. The same parts.

Figure 1 is a cross-sectional view of a typical suction device of the prior art in the axial direction;

Figure 2 is a plan view showing the structure of the suction device shown in Figure 1 after removing the second plate;

Figure 3A is a cross-sectional view of the suction device of the first embodiment of the present invention, taken along its axis;

Figure 3B is a perspective view of the suction device of Figure 3A as viewed from a first side of the first panel;

Figure 4 is a cross-sectional view of the suction device of the second embodiment of the present invention over its axis.

The main reference signs indicate:

101-second plate, 102-first plate, 103-exhaust port, 104-exhaust chamber, 105-suction hole, 106-exhaust chamber, 107-wafer;

201 - first plate, 202 - second plate, 203 - suction port, 204 - suction chamber, 205 - buffer suction chamber, 206 - first suction hole, 207 - second suction hole, 208 - protrusion.

detailed description

The invention will be described in more detail below with reference to the accompanying drawings. While the invention has been described in terms of the preferred embodiments of the present invention Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the disclosure may be fully conveyed to those skilled in the art.

The present invention provides a suction device for adsorbing a wafer which, in connection with a vacuum generating device, adsorbs a wafer by a negative pressure action from a vacuum generating device. The suction device includes a first plate, and the first plate is provided with a first pumping zone and a second pumping zone in communication with the vacuum generating device, wherein the first pumping zone is located in a central region of the wafer adsorption zone, and second The pumping zone is located in the edge region of the wafer adsorption zone. It should be noted that, in the present application, the wafer adsorption region refers to a region for adsorbing a wafer in the first surface of the first plate, which may correspond to the entire surface of the wafer, that is, the region is not only corresponding. In the transfer area; and the central area of the wafer adsorption area refers to the area of the first surface of the first board corresponding to the area on the wafer used to fabricate the integrated circuit; the edge area of the wafer adsorption area refers to the An area of the first side of a board corresponding to a region of the wafer edge that is not used to fabricate the integrated circuit, in other words, an edge area of the wafer adsorption area refers to a corresponding area of the first side of the first board corresponding to the transfer area region. By providing a first pumping zone acting on the central region of the wafer and a second pumping zone acting on the edge region of the wafer on the first plate, and during the suction process, the edge region of the front side of the wafer corresponds to the second pumping The gas zone, the central area of the front side of the wafer corresponds to the first pumping zone, so that the vacuum suction force generated by the vacuum generating device acts on the central region and the edge region of the front side of the wafer, so that the basic force of the wafer is: 1 ) a vacuum suction force upward in the vertical direction; 2) gravity downward in the vertical direction; and in the case where the vacuum suction force is greater than gravity, is also subjected to a downward thrust perpendicular to the first plate. Since the vacuum adsorption force generated by the vacuum generating device acts on the central region and the edge region of the front surface of the wafer, the wafer is subjected to an upward adsorption force in both the central region and the edge region, that is, the wafer is entirely stressed from the central region to the edge region. More uniform, which can reduce or even avoid the problem of deformation of the wafer (especially deformation of the central region of the wafer) due to uneven force in the central region and the edge region or even the opposite direction of the force, thereby reducing or even avoiding damage of the wafer due to the above deformation. Or there is a crush.

The suction device according to the first embodiment of the present invention will be described in detail below with reference to Figs. 3A and 3B. 3A is a cross-sectional view of the suction device according to the first embodiment of the present invention, and FIG. 3B is a perspective view of the suction device shown in FIG. 3A as viewed from the first side of the first plate.

Referring to FIG. 3A and FIG. 3B together, the suction device provided in this embodiment is used for adsorbing a wafer, which mainly comprises a first plate 201 and a second plate 202 which are stacked from top to bottom, and the first plate 201 is provided with a first pumping zone and a second pumping zone connected by a vacuum generating device (not shown), wherein the first pumping zone is located in a central region of the wafer adsorption zone, and the second pumping zone is located in an edge region of the wafer adsorption zone. The wafer adsorption region refers to a region in the first surface of the first plate 201 for adsorbing the wafer. In the present application, the first surface of the first plate 201 refers to the lower surface of the first plate 201 shown in FIG. 3A, and the second surface of the first plate 201 refers to the upper surface of the first plate 201 shown in FIG. 3A; The first side of the second plate 202 refers to the lower surface of the second plate 202 shown in FIG. 3A, and the second side of the second plate 202 refers to the upper surface of the second plate 202 shown in FIG. 3A.

The second plate 202 has a circular plate-like structure on which a suction port 203 is provided, and the suction port 203 penetrates the second plate 202 in the axial direction of the second plate 202 (i.e., in the thickness direction thereof) and is connected to the vacuum generating device. The second plate 202 has a protrusion 208 projecting outward in the radial direction of the second plate 202 near the suction port 203 to facilitate operation of the suction device.

The first plate 201 is a circular plate-like structure located below and attached to the second plate 202. Specifically, the second surface of the first plate 201 is in contact with the first surface of the second plate 202. An annular groove recessed toward the first face thereof is provided on the second side of the first plate 201. By annular groove is meant that the orthographic projection of the groove on the second side of the first plate 201 presents an annular structure that surrounds the central axis of the first plate 201. The first plate 201 is in conformity with the second plate 202 such that the annular groove cooperates with the second plate 202 to form the pumping chamber 204. The pumping chamber 204 communicates with the suction port 203 such that the pumping chamber 204 communicates with the vacuum generating device via the suction port 203. In order to ensure that a good pumping function can be achieved, the fit of both the first plate 201 and the second plate 202 should be a sealing fit, that is, at least in the peripheral region of the annular groove, sealing fit, thereby ensuring The pumping chamber 204 cannot communicate with the outside via the fitting. By communicating with the outside means communicating with other components or spaces other than the suction device and the vacuum generating device.

The first pumping zone in this embodiment includes a buffering suction chamber 205 and a plurality of first suction holes 206. Wherein, the buffering extraction chamber 205 is disposed on the first surface of the first plate 201 and is disposed to be recessed toward the second surface thereof, and the orthographic projection of the buffering extraction chamber 205 on the first surface is presented as The central axis of a plate 201 is a circle of a circle having a diameter larger than the inner diameter of the annular groove and smaller than the outer diameter of the annular groove, and the depth of the buffer extraction chamber 205 is smaller than the thickness of the first plate 201 and the annular groove The difference in depth. The diameter of the buffer evacuation chamber 205 is preferably 7/10 to 9/10 of the diameter of the first plate 201, more preferably 4/5 of the diameter of the first plate 201, to be suitable for drawing a wafer of a conventional size. The depth of the buffering evacuation chamber 205 is 1 mm or more to ensure sufficient buffer space, preferably 1 to 2 mm, so as to ensure that the thickness of the first plate 201 is not excessively thick while ensuring sufficient buffer space.

The first air vent 206 is disposed between the pumping chamber 204 and the buffering chamber 205 to communicate with each other, and the opening of the first air vent 206 on the buffering chamber 205 is located on the inner wall of the buffering chamber 205. The opening is disposed away from the center of the buffer suction chamber 205 at the edge position of the chamber of the buffer suction chamber 205. The number of the first air venting holes 206 is eight, and is arranged in a circle along the circumferential direction of the buffering air venting chamber 205, and the first air venting holes 206 of this ring are evenly arranged in the circumferential direction of the buffering venting chamber 205 to uniformly Adsorb the wafer. The distance between the first evacuation hole 206 and the center of the first plate 201 is 1/4 to 5/12 of the diameter of the first plate 201, and more preferably 1/3 of the diameter of the first plate 201.

The bottom surface of the annular region between the buffering extraction chamber 205 and the outer peripheral edge of the first plate 201 is inclined outwardly from the outside to form a curved surface, that is, in the vertical direction, the bottom end of the side wall of the buffering extraction chamber 205 is higher than the first end. The outer edge of the bottom surface of the plate 201, and in the cross-sectional view through the axis of the first plate 201, the line between the bottom end of the side wall of the buffering suction chamber 205 and the outer edge of the bottom surface of the first plate 201 is curved. Thereby, the suction device is brought into contact with the front side of the wafer along the edge of the wafer during the suction process. Since the bottom surface of the first plate 201 has only an outer ring which is curved, this further reduces the processing difficulty and makes it easier to ensure the machining accuracy. Of course, in a practical application, the buffering suction chamber can also be disposed such that, in the vertical direction, the bottom end of the side wall of the buffering extraction chamber 205 is higher than the outer edge of the bottom surface of the first plate 201, and In the cross-sectional view of the axis of a plate 201, the line connecting the bottom end of the side wall of the buffering chamber 205 and the outer edge of the bottom surface of the first plate 201 is straight.

The second pumping zone in this embodiment includes a second pumping hole 207. The second suction holes 207 are arranged outside the buffer suction chamber 205 and communicate with the suction chamber 204. The number of the second suction holes 207 is eight, and is arranged in a circle along the circumferential direction of the first plate 201, and this second suction holes 207 are evenly arranged in the circumferential direction of the first plate 201. The distance between the second suction holes 207 and the outer peripheral edge of the first plate 201 is preferably 5 to 8 mm.

It should be noted that although the first air venting hole 206 and the second air venting hole 207 in the embodiment shown in FIG. 3A and FIG. 3B are both arranged in one turn and the number is eight, in practical applications, the first air venting hole 206 and the second air vent 207 may also take other arrangements, for example, the first air bleed holes 206 are arranged in a plurality of turns along the circumferential direction of the buffer venting chamber 205, and/or the number of the first air venting holes 206 is not limited. 8 pieces, for example, may also be 1 or other quantities, of which 4 to 8 are preferred, which is convenient for processing, and enables the first suction holes 206 to generate an appropriate adsorption force to ensure that the wafer is in the process of taking and transferring the film. For example, the number of the second air vents 207 is not limited to eight, and may be, for example, one or other numbers, and preferably four to eight, which is convenient for processing and enables the second air vent 207. Appropriate adsorption force is generated to ensure that the wafer remains stable during the take-up and transfer process. Moreover, when the number of the first air venting holes 206 and/or the second air venting holes 207 is plural, the arrangement of the air venting holes can be freely distributed without being uniformly distributed along the circumferential direction of the first plate 201, of course, in order to more uniformly Adsorbing the wafer, the first evacuation holes 206 and/or the second extraction holes 207 should be uniformly distributed along the circumferential direction of the first plate 201, and when the plurality of first extraction holes 206 are arranged along the circumferential direction of the first extraction region When the plurality of turns are arranged, it is preferable that the plurality of first suction holes 206 of each turn are uniformly arranged along the circumferential direction of the first suction zone; more preferably, the arrangement of the first suction holes 206 When the number of turns is greater than or equal to 3, the spacing between adjacent two turns is made equal. And, when the plurality of second air vents 207 are arranged in a plurality of turns along the circumferential direction of the second pumping zone, preferably, the plurality of second air vents 207 of each turn may be along the second pumping zone. The circumferential direction is evenly arranged; more preferably, in the case where the number of the second evacuation holes 207 is equal to or greater than 3, the spacing between the adjacent two turns is made equal.

It should be further noted that although the first air venting holes 206 in the embodiment shown in FIG. 3A and FIG. 3B are arranged in one turn, and the projections of the first air venting holes 206 on the first surface of the first plate 201 all fall in the buffer. The suction chamber 205 is within the projection of the first surface of the first plate 201, that is, the first air holes 206 are all opened in the buffer suction chamber 205, but in practical applications, all the first pumping may be performed. A portion of the projection of the air vent 206 on the first side of the first plate 201 falls within the projection of the buffering plenum 205 on the first side of the first plate 201, i.e., a portion of the first venting opening 206 is opened. The other portion of the buffering chamber 205 is disposed outside the buffering chamber 205, and the first air hole 206 opened outside the buffering chamber 205 is directly in contact with the wafer during the suction process. The contact area should be able to avoid integrated circuit graphics.

It should also be noted that although the first pumping zone and the second pumping zone in the embodiment shown in FIGS. 3A and 3B are both connected to the vacuum generating device via the pumping chamber 204 and the air extracting port 203, in practice In an application, the pumping chamber 204 may also be in communication with one of the first pumping zone and the second pumping zone; or the first pumping zone and/or the second pumping zone may be directly connected to the vacuum generating device. That is, the suction device is no longer provided with the suction chamber 204 and the suction port 203. Moreover, although the embodiment shown in FIGS. 3A and 3B includes the first plate 201 and the second plate 202, in a practical application, the second plate 202 may not be provided, but the first pumping in the first plate 201 may be performed. The gas zone and the second pumping zone are in direct communication with the vacuum generating means to adsorb the wafer by the vacuum adsorption force generated by the vacuum generating means.

It should be noted that, although the first plate 201 and the second plate 202 in the embodiment shown in FIG. 3A and FIG. 3B are circular plate-like structures, the shape of the two plates may be unrestricted in practical applications. In this case, the diameter of the first plate 201 refers to the largest dimension of the first plate 201 in the radial direction; the diameter of the second plate 202 refers to the maximum dimension of the second plate 202 in the radial direction. Similarly, although the orthographic projection of the buffering evacuation chamber 205 on the first surface in the embodiment shown in FIGS. 3A and 3B is a circle centered on the central axis of the first plate 201, in practical applications, buffering is performed. The shape of the air chamber 205 may not be limited, and in this case, the diameter of the buffer suction chamber 205 refers to the maximum size of the buffer suction chamber 205 in the radial direction. In addition, the shape of the annular groove is also not limited, the inner diameter of the annular groove refers to the smallest dimension of the annular groove in the radial direction, and the outer diameter of the annular groove refers to the annular groove in the radial direction. The largest size.

The suction device of the first embodiment of the present invention is provided with a first pumping zone acting on the central region of the wafer and a second pumping zone acting on the edge region of the wafer on the first plate 201 during the suction process. The edge area of the front side of the wafer corresponds to the second pumping area, and the central area of the front side of the wafer corresponds to the first pumping area, so that the vacuum suction force generated by the vacuum generating device acts on the central area and the edge area of the front side of the wafer Therefore, the whole force of the wafer from the central region to the edge region is relatively uniform, thereby being able to reduce or even avoid the problem of deformation of the wafer (especially deformation of the central region of the wafer) due to uneven force in the central region and the edge region or even the opposite direction of the force. , thereby reducing or even avoiding wafer damage or crushing due to the above deformation.

Further, since the first air vent 206 in the present embodiment communicates with the pumping chamber 204 through the buffering venting chamber 205, that is, the absorbing force from the first venting hole 206 does not directly act on the wafer, but passes through The buffer extraction chamber 205 is buffered and then applied to the wafer, so in this case, the pressure generated by the adsorption force in the first pumping region is smaller than the pressure at which the adsorption force from the first suction port 206 is directly applied to the wafer, and thus During the adsorption process, the amount of deformation of the wafer can be reduced, so that the wafer is not easily damaged; at the same time, since the first extraction hole 206 is not directly in contact with the wafer, in this case, even if the wafer is deformed, the first pumping is not blocked. Air hole 206. Moreover, since the first pumping region acting on the central region of the wafer and the second pumping region acting on the edge region of the wafer are disposed, the amount of deformation of the wafer can be made small, so that the wafer can be further reduced or even prevented from being blocked due to deformation. The phenomenon of the air holes 206 and/or the second air holes 207.

Further, in the suction device of the first embodiment of the present invention, since the first suction region includes the buffer extraction chamber 205 and the first suction hole 206, the second extraction region includes the second extraction hole 207, The adsorption force generated by the first extraction hole 206 and the second extraction hole 207 will act on the wafer in succession: that is, at the beginning of the suction, the second extraction hole 207 first generates an adsorption force to adsorb the wafer to ensure that the wafer does not tilt. The wafer and the bottom surface of the first plate 201 create a relatively closed space, and the adsorption force generated by the first air suction hole 206 further ensures the smoothness of the film taking and film transfer process.

The suction device of the second embodiment of the present invention will be described in detail below with reference to FIG. 4, wherein FIG. 4 is a cross-sectional view of the suction device according to the second embodiment of the present invention. The suction device provided by the second embodiment is similar to the suction device provided by the foregoing first embodiment, and the similar structures are not described again. Only the difference between the two is illustrated: the first embodiment is not provided with the first The air vent 206, whereby the first pumping zone includes the buffering venting chamber 205, but no longer includes the first venting port 206, ie, the buffering plenum 205 is directly in communication with the plenum 204 and is no longer via the first pumping The vent 206 is in communication with the plenum 204. Thus, not only the technical effects described in the first embodiment can be obtained, but also the processing is more convenient.

The embodiments of the present invention have been described above, and the foregoing description is illustrative, not limiting, and not limited to the disclosed embodiments. Numerous modifications and changes will be apparent to those skilled in the art without departing from the scope of the invention. The choice of terms used herein is intended to best explain the principles, practical applications, or improvements of the techniques in the various embodiments of the embodiments, or to enable those of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

A suction device for adsorbing a wafer, comprising: a first plate, the first plate being provided with a first pumping zone and a second pumping zone for communicating with a vacuum generating device, the first The pumping zone is located at a central region of the wafer adsorption zone, and the second pumping zone is located at an edge region of the wafer adsorption zone, wherein the wafer adsorption zone is referred to as a first one of the first plates for adsorption The area of the wafer.
A suction device according to claim 1, wherein said first suction region comprises a buffering suction chamber recessed from a first side of said first plate toward a second side of said first plate Formed, and the buffered evacuation chamber is in communication with the vacuum generating device.
The suction device according to claim 2, wherein in the vertical direction, the bottom end of the side wall of the buffering suction chamber is higher than the outer edge of the bottom surface of the first plate, and In the cross-sectional view of the first plate axis, the line between the bottom end of the side wall of the buffering suction chamber and the outer edge of the bottom surface of the first plate is curved or straight.
The sheet suction device according to claim 3, wherein the buffer suction chamber has a diameter of 7/10 to 9/10 of a diameter of the first plate.
The sheet suction device according to claim 4, wherein the buffer suction chamber has a depth of 1 to 2 mm.
The sheet suction device according to claim 2, wherein the first suction region further includes a first suction hole, and the buffer suction chamber communicates with the vacuum generating device via the first suction hole.
The sheet suction device according to claim 6, wherein the number of the first suction holes is plural, and is arranged in one or more turns along a circumferential direction of a central portion of the wafer adsorption region.
The sheet suction device according to claim 7, wherein a plurality of said first suction holes located in the same circle are uniformly arranged in a circumferential direction of a central portion of said wafer adsorption region.
The sheet suction device according to claim 8, wherein a distance between said first suction hole closest to a center of said first plate and a center of said first plate is said first plate 1/4 to 5/12 of the diameter.
A suction device according to claim 2, wherein said second suction region comprises a second suction hole.
The sheet suction device according to claim 10, wherein the number of the second suction holes is plural, and is arranged in one or more turns along the circumferential direction of the edge region of the wafer adsorption region.
The sheet suction device according to claim 11, wherein, for each of the plurality of the second suction holes, the second suction holes are uniformly arranged in the circumferential direction of the edge portion of the wafer adsorption region.
The sheet suction device according to claim 12, wherein the distance between the second suction hole and the outer peripheral edge of the first plate is 5 to 8 mm.
The sheet suction device according to any one of claims 1 to 13, wherein a second surface of the first plate is provided with a suction chamber, and the suction chamber is from a second of the first plate The first surface is recessed and formed around a central axis of the wafer adsorption region, and is in communication with the vacuum generating device and at least in communication with one of the first pumping region and the second pumping region.
A suction device according to claim 14, further comprising a second plate stacked on the second side of said first plate and having an air suction port thereon, said pumping A gas port is in communication with the vacuum generating device, the first pumping zone, and the second pumping zone.
A suction device according to claim 15, wherein said suction port is in communication with said pumping chamber, said pumping chamber being at least one of said first pumping zone and said second pumping zone Connected.
The suction device according to claim 16, wherein a diameter of said buffering suction chamber is larger than an inner diameter of said suction chamber and smaller than an outer diameter of said suction chamber, and said buffering chamber is a depth less than a difference between a thickness of the first plate and a depth of the pumping chamber;

The first air venting hole is a through hole, and is located between the buffering suction chamber and the pumping chamber and connects the two.
The sheet suction device according to any one of claims 15 to 17, wherein the second plate has a projection projecting outward in the radial direction thereof near the suction port.