WO2023103794A1 - Dispositif de maintien de tranche et arbre rotatif associé - Google Patents

Dispositif de maintien de tranche et arbre rotatif associé Download PDF

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Publication number
WO2023103794A1
WO2023103794A1 PCT/CN2022/133993 CN2022133993W WO2023103794A1 WO 2023103794 A1 WO2023103794 A1 WO 2023103794A1 CN 2022133993 W CN2022133993 W CN 2022133993W WO 2023103794 A1 WO2023103794 A1 WO 2023103794A1
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WO
WIPO (PCT)
Prior art keywords
rotating shaft
gas
gas distribution
ring
distribution ring
Prior art date
Application number
PCT/CN2022/133993
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English (en)
Chinese (zh)
Inventor
庞昊
陶晓峰
韩阳
陆寅霄
贾社娜
王晖
Original Assignee
盛美半导体设备(上海)股份有限公司
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Publication of WO2023103794A1 publication Critical patent/WO2023103794A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16J—PISTONS; CYLINDERS; SEALINGS
    • F16J15/00—Sealings
    • F16J15/16—Sealings between relatively-moving surfaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16J—PISTONS; CYLINDERS; SEALINGS
    • F16J15/00—Sealings
    • F16J15/44—Free-space packings
    • F16J15/447—Labyrinth packings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, and more particularly, to a wafer holding device and a rotating shaft thereof.
  • Wafer backside cleaning is an important process in the wafer wet process. By cleaning the back of the wafer, cross-contamination can be avoided and the yield rate can be improved. In the backside cleaning process, Bernoulli chucks have been widely used.
  • the Bernoulli chuck includes a chuck 30 and a rotating shaft 40 .
  • the outer coaxial sleeve of the rotating shaft 40 is provided with a Bernoulli gas distribution ring 41 and a lifting gas distribution ring 42 .
  • the gas supply pipeline 411 of the Bernoulli gas distribution ring 41 communicates with the Bernoulli gas outlet pipeline 31 on the chuck 30 through the first in-axis air channel 43 of the rotating shaft 40, and is used for feeding the wafer w when the wafer w is cleaned. Gas is supplied to the lower surface to suspend the wafer w above the chuck 30 and prevent the cleaning liquid from flowing to the lower surface of the wafer w, causing the front side of the wafer w to be etched.
  • the air supply pipe 421 of the lifting gas distribution ring 42 is connected with the lifting air outlet pipe 32 on the chuck 30 through the second in-axis air channel 44 of the rotating shaft 40, and is used to supply the lower surface of the wafer w when picking and placing the wafer w.
  • the gas is used to adjust the distance between the wafer w and the upper surface of the chuck 30 .
  • the rotating shaft 40 drives the chuck 30 to rotate, while the Bernoulli gas distribution ring 41 and the lifting gas distribution ring 42 are stationary, usually between the rotating shaft 40 and the gas distribution rings (41, 42)
  • a labyrinth seal is used to prevent gas from leaking from the gap between the rotating shaft 40 and the gas distribution rings (41, 42). It should be noted that the labyrinth seal only reduces the amount of leakage, not eliminates it. The gas can still leak from the upper or lower ends of the gas distribution rings (41, 42) along the surface of the rotating shaft 40.
  • the gas leakage of the gas distribution rings (41, 42) will cause insufficient gas supply to the lower surface of the wafer w, which will affect the stability of the Bernoulli chuck from the following two directions: 1) When picking and placing the wafer w, The gas leakage from the lifting gas distribution ring 42 leads to insufficient gas flow from the lifting outlet pipe 32, which makes the floating height of the wafer w unable to meet the height requirements for picking and placing the wafer; 2) when cleaning the wafer w, the Bernoulli matching Gas leakage from the gas ring 41 results in insufficient gas flow from the Bernoulli gas outlet pipe 31 , causing the cleaning liquid to easily flow to the lower surface of the wafer w, which in turn causes the edge and front side of the wafer w to be etched, which cannot meet the process requirements.
  • the purpose of the present invention is to provide a wafer holding device and its rotating shaft, which are used to solve the problem that the sealing effect of the rotating shaft is insufficient and affects the stability of the process.
  • the present invention provides a rotating shaft for connecting with a chuck holding a wafer, including:
  • a central rotating shaft, the central rotating shaft is provided with an air intake pipe inside;
  • At least one first gas distribution ring the at least one first gas distribution ring is coaxially sleeved on the outside of the central shaft, and there is a gap between the at least one first gas distribution ring and the central shaft, the at least one first gas distribution ring
  • a gas distribution ring is provided with a gas supply pipe inside, and the gas supply pipe of the at least one first gas distribution ring communicates with the air intake pipe of the central rotating shaft, and is used to supply gas to the rotating central rotating shaft;
  • At least one dynamic sealing ring the at least one dynamic sealing ring is coaxially fixed on the outside of the central rotating shaft, and the at least one dynamic sealing ring is alternately arranged with the at least one first gas distribution ring, and the dynamic sealing ring and the first distribution ring are arranged alternately.
  • There are several inner grooves on the opposite end face of the gas ring the inner grooves are used to accommodate the leaked gas from the gap between the first gas distribution ring and the central rotating shaft, and the leaked gas is made into the inner grooves when the central rotating shaft rotates.
  • a first high-pressure sealing area is formed inside to prevent gas leakage of the first gas distribution ring, wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring and the central rotating shaft.
  • a wafer holding device comprising:
  • a chuck the chuck is used to hold the wafer, and the inside of the chuck is provided with an air outlet pipe;
  • the chuck is fixed on the top of the rotating shaft;
  • the air outlet pipe inside the chuck communicates with the air inlet pipe inside the rotating shaft.
  • the rotating shaft provided by the present invention is configured with the first gas distribution ring and the dynamic sealing ring arranged adjacently, and an inner groove is provided on the end surface of the dynamic sealing ring opposite to the first gas distribution ring.
  • the wafer holding device proposed by the present invention adopts a rotating shaft equipped with a dynamic sealing ring, so that the gas output of the gas outlet pipeline in the chuck can meet the process requirements, thereby effectively improving the stability of the process.
  • Fig. 1 is a cross-sectional view of a rotating shaft provided by Embodiment 1 of the present invention
  • Figure 2 is a partially enlarged view of Figure 1;
  • Fig. 3 is a perspective view of a dynamic sealing ring provided by Embodiment 1 of the present invention.
  • Figure 4 is a top view of the dynamic sealing ring
  • Figure 5 is a cross-sectional view of the dynamic sealing ring
  • Fig. 6 is a cross-sectional view of the rotating shaft provided by Embodiment 2 of the present invention.
  • Figure 7 is a partially enlarged view of Figure 6;
  • Fig. 8 is a perspective view of a dynamic sealing ring provided by Embodiment 2 of the present invention.
  • Fig. 9 is another perspective view of the dynamic sealing ring provided by Embodiment 2 of the present invention.
  • Fig. 10 is a cross-sectional view of the rotating shaft provided by Embodiment 3 of the present invention.
  • Figure 11 is a partially enlarged view of Figure 10;
  • Fig. 12 is a perspective view of the dynamic sealing ring provided by Embodiment 3 of the present invention.
  • Figure 13 is a top view of Figure 12;
  • FIG. 14 is a cross-sectional view of a wafer holding device provided in Embodiment 4 of the present invention.
  • Fig. 15 is a schematic diagram of a Bernoulli chuck in the prior art.
  • the rotating shaft includes a central rotating shaft 110 , at least one first gas distribution ring 120 and at least one dynamic sealing ring 130 .
  • An air intake duct 111 is arranged inside the central rotating shaft 110 , the air inlet of the air intake duct 111 is located on the outer wall of the central rotating shaft 110 , and the air outlet of the air intake duct 111 is located on the top of the central rotating shaft 110 .
  • the first gas distribution ring 120 is coaxially sleeved on the outside of the central rotating shaft 110 for supplying gas to the rotating central rotating shaft 110 .
  • the inside of the first gas distribution ring 120 is provided with an air supply pipe 121, the air inlet of the air supply pipe 121 is located on the outer wall of the first gas distribution ring 120, and the gas outlet of the air supply pipe 121 is located on the inside of the first gas distribution ring 120
  • the wall, specifically, the air outlet of the air supply pipe 121 is an annular air outlet groove.
  • the gas outlet of the gas supply pipeline 121 communicates with the gas inlet of the gas inlet pipeline 111 , and the first gas distribution ring 120 provides gas, such as nitrogen, for the central shaft 110 through the gas supply pipeline 121 and the gas inlet pipeline 111 .
  • the number of intake pipes 111 can be multiple, the number of air supply pipes 121 corresponds to the number of air intake pipes 111 one by one, and each air supply pipe 121 provides gas for one air intake pipe 111 .
  • a plurality of gas supply pipes 121 can be arranged in a first gas distribution ring 120 to respectively provide gas for a plurality of air intake pipes 111 in the central rotating shaft 110; a first gas distribution ring 120 can also be provided with a
  • the air pipes 121 provide air to the air intake pipes 111 in the central rotating shaft 110 through the multiple first gas distribution rings 120 .
  • the numbers of the intake pipe 111, the first gas distribution ring 120 and the air supply pipe 121 can be adjusted according to the actual situation.
  • two first gas distribution rings 120 respectively provide gas to two intake pipes 111 in the central rotating shaft 110 .
  • the two intake ducts 111 in the central rotating shaft 110 are respectively a first intake duct 111a and a second intake duct 111b.
  • the two first gas distribution rings 120 are disposed up and down along the axial direction of the central rotating shaft 110 , and are respectively denoted as the upper first gas distribution ring 120 a and the lower first gas distribution ring 120 b.
  • Each of the two first gas distribution rings (120a, 120b) is provided with an air supply pipe 121, which communicates with the first air intake pipe 111a and the second air intake pipe 111b respectively.
  • the dynamic sealing ring 130 is coaxially fixed on the outside of the central rotating shaft 110 , and when the central rotating shaft 110 rotates, the dynamic sealing ring 130 can rotate synchronously with the central rotating shaft 110 .
  • the dynamic sealing rings 130 and the first gas distribution rings 120 are alternately arranged on the outside of the central rotating shaft 110 .
  • a dynamic sealing ring 130 is provided on at least one side of the first gas distribution ring 120 along its axial direction. For example, in FIG. 1 , a dynamic sealing ring 130 is disposed below the upper first gas distribution ring 120 a, and a dynamic sealing ring 130 is disposed above the lower first gas distribution ring 120 b.
  • a dynamic sealing ring 130 may be provided on the upper and lower sides of the first gas distribution ring 120 .
  • a dynamic sealing ring can be shared between two adjacent first gas distribution rings. As shown in FIG. between. The position and quantity of the dynamic sealing ring 130 relative to the first gas distribution ring 120 can be adjusted according to the specific requirements of the process.
  • the first gas distribution ring 120 is a stationary part, and the central rotating shaft 110 is a moving part. In order to ensure that the central rotating shaft 110 can rotate freely under the drive of the driving mechanism (not shown), there is a gap between the first gas distribution ring 120 and the central rotating shaft 110. gap.
  • labyrinth seal grooves 122 are arranged on the upper and lower sides of the gas outlet of the gas supply pipe 121 of the first gas distribution ring 120. When the first gas distribution ring 120 supplies gas, the labyrinth seal grooves 122 can prevent part of the gas from moving along the first gas distribution ring 120. A gap between a gas distribution ring 120 and the central shaft 110 leaks.
  • the dynamic sealing ring 130 and the central rotating shaft 110 are arranged separately. As shown in FIG. 1 and FIG. A sealing ring 20 is provided between the dynamic sealing ring 130 and the central rotating shaft 110 , and the sealing ring 20 can prevent the gas leaked from the first gas distribution ring 120 from continuing to diffuse along the axial direction of the central rotating shaft 110 .
  • the dynamic sealing ring 130 is arranged between the upper first gas distribution ring 120a and the lower side first gas distribution ring 120b, and the upper end surface and the lower end surface of the dynamic sealing ring 130 are respectively provided with several an inner groove 131 .
  • the inner groove 131 is used to accommodate gas leaked from the gap between the first gas distribution ring 120 and the central shaft 110.
  • the gas forms a first high-pressure sealing area in the inner groove 131 to prevent the second Gas leakage of a gas distribution ring 120 , wherein the air pressure in the first high-pressure sealing area is higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110 .
  • the two gas distribution rings 120a and 120b can also be prevented from leaking.
  • the gas provided by the first gas distribution rings 120a and 120b is blown between the two.
  • 3 to 5 show the structure of the dynamic sealing ring in this embodiment.
  • Several inner grooves 131 are located on the inner edge of the dynamic seal ring 130, and are arranged in an annular array along the rotation direction of the dynamic seal ring 130 at a first tangential angle ⁇ , the first tangential angle ⁇ is the distance between the inner grooves 131 and the dynamic seal ring 130.
  • the radial included angle of the sealing ring 130 is the first tangential angle ⁇ ranging from 0° to 30°, for example, the first tangential angle ⁇ is 15°.
  • the inner groove 131 has a first end 1311 and a second end 1312, the width of the first end 1311 is greater than the width of the second end 1312, that is, the inner groove 131 gradually extends from the first end 1311 to the second end 1312. narrowed.
  • the first end 1311 is close to the central rotating shaft 110, and is basically facing the gas leakage of the first gas distribution ring 120, and is used to receive the gas leaked from the first gas distribution ring 120; the second end 1312 is far away from the central rotating shaft 110, forming a retaining wall , used to intercept gas, so that the gas entering the inner groove 131 converts the dynamic pressure into static pressure at the second end 1312 to form a high-pressure sealing area in the inner groove 131 .
  • the cross-sectional shape of the inner groove 131 can be a triangle as shown in FIG. 3 and FIG. 4 . In other embodiments, the cross-sectional shape of the inner groove 131 can also be any narrowed shape such as a spiral shape or an L shape, which is not limited here. .
  • the process of gas forming a high-pressure sealing area in the inner groove 131 will be described in detail below. While the dynamic sealing ring 130 rotates with the central rotating shaft 110, the first end 1311 of the inner groove 131 receives the gas leaked from the first gas distribution ring 120, and the dynamic sealing ring 130 will The received gas is accelerated, and the accelerated gas collides with the second end 1312 of the inner groove 131, converting the dynamic pressure of the gas into static pressure, and then forms a first high-pressure sealing area near the inner groove 131, the first high-pressure sealing area The pressure will be higher than the air pressure in the gap between the first gas distribution ring 120 and the central rotating shaft 110, forcing the gas leaked from the first gas distribution ring 120 to the direction of less air pressure (such as the air intake duct of the central rotating shaft 110 111) to prevent the gas supplied by the first gas distribution ring 120 from continuously leaking at the gap between the first gas distribution ring 120 and the central rotating shaft 110, so that the gas leakage of the first gas distribution ring 120 can be
  • the bottom surface of the inner groove 131 can be set as a plane, but in order to further improve the sealing effect of the dynamic seal ring 130, the bottom surface of the inner groove 131 is provided with an inclined surface, as shown in Figure 5, the bottom surface of the inner groove 131 is aligned with the vertical direction
  • the included angle ⁇ may be 75°-85°.
  • the bottom surface of the inner groove 131 is inclined, which can accelerate the gas and cause greater stagnation pressure, thereby improving the sealing effect.
  • a shielding ring 150 may be provided on the radial periphery of the dynamic sealing ring 130 to prevent external ambient air from entering the first gas distribution ring 120 .
  • a rotating shaft including a central rotating shaft 210, at least one first gas distribution ring 220, a dynamic sealing ring 230 and at least one second gas distribution ring 240, in The radial periphery of the dynamic sealing ring 230 is provided with a shielding ring 250 .
  • At least one first gas distribution ring 220 , at least one dynamic sealing ring 230 and at least one second gas distribution ring 240 are coaxially sleeved on the outside of the central shaft 210 , and the dynamic sealing ring 230 is connected to the first gas distribution ring 220 or the second distribution ring 240 .
  • the air rings 240 are arranged alternately.
  • the difference between the second embodiment and the first embodiment lies in the structure of the dynamic sealing ring 230 and the coaxial arrangement of the second gas distribution ring 240 on the outside of the central rotating shaft 210, and the rest of the structure is the same as the first embodiment.
  • the structure of the second gas distribution ring 240 is the same as that of the first gas distribution ring 220. The difference between the two is that the first gas distribution ring 220 is used to supply gas to the central shaft 210 in the rotating state, and the second gas distribution ring 240 is used to supply gas to the central shaft 210 at rest.
  • the rotating shaft can be applied to a Bernoulli chuck
  • the first gas distribution ring 220 is configured to supply Bernoulli gas to the central rotating shaft 210 when the central rotating shaft 210 is in a rotating state, so that the wafer is suspended above the chuck
  • the second gas distribution ring 240 is configured to supply lifting gas to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so as to lift the wafer to the pick-and-place wafer height.
  • the end surface of the dynamic sealing ring 230 opposite to the first gas distribution ring 220 is provided with several inner grooves 231, and the several inner grooves 231 are located on the inner edge of the dynamic sealing ring 230; the dynamic sealing ring 230
  • a step structure 232 is provided on the end surface opposite to the second gas distribution ring 240 , and the step structure 232 is an annular channel located at the inner edge of the dynamic sealing ring 230 .
  • the structures and functions of the several inner grooves 231 are the same as those in the first embodiment, and are used to form a first high-pressure sealing area in the inner grooves 231 for the gas leaked from the first gas distribution ring 220 when the central rotating shaft 210 rotates.
  • the step structure 232 utilizes its 90° corner to cause boundary layer separation and vortex flow to weaken the gas leakage of the second gas distribution ring 240 .
  • the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with a stepped structure 232 instead of the inner groove 231, because the inner groove 231 mainly uses centrifugal acceleration to form a high pressure in the groove
  • the sealing area achieves a sealing effect, but the second gas distribution ring 240 supplies air to the central rotating shaft 210 when the central rotating shaft 210 is in a static state, so even if the end surface of the dynamic sealing ring 230 opposite to the second gas distribution ring 240 is provided with an inner groove 231, it is also impossible to use the centrifugal acceleration to generate a high-pressure sealing area to achieve the sealing effect.
  • a rotating shaft including a central rotating shaft 310 , at least one first gas distribution ring 320 , a dynamic sealing ring 330 and at least one second gas distribution ring 340 .
  • At least one first gas distribution ring 320 , at least one dynamic sealing ring 330 and at least one second gas distribution ring 340 are coaxially sleeved on the outside of the central shaft 310 , and the dynamic sealing ring 330 is connected to the first gas distribution ring 320 or the second distribution ring 320 .
  • the air rings 340 are arranged alternately.
  • the difference between the third embodiment and the second embodiment lies in the structure of the dynamic sealing ring 330, and the other structures are the same as those of the second embodiment.
  • Figure 12 and Figure 13 disclose the structure of the dynamic sealing ring in this embodiment.
  • the end surface of the dynamic sealing ring 330 opposite to the first gas distribution ring 320 is provided with several inner grooves 331 and several outer grooves 333, and the dynamic sealing ring 330 and the second gas distribution ring A stepped structure 332 and several outer grooves 333 are provided on opposite end surfaces of the 340 .
  • Several inner grooves 331 are configured to prevent gas leakage from the first gas distribution ring 320
  • the stepped structure 332 is configured to prevent gas leakage from the second gas distribution ring 340
  • several outer grooves 333 are configured to prevent external ambient gas from entering the second gas distribution ring 340.
  • a gas distribution ring 320 or a second gas distribution ring 340 is used to solve the problem that ambient gas pollutes the clean gas supplied by the gas distribution ring.
  • the distribution and structure of the plurality of inner grooves 331 are the same as those in the first embodiment, and the distribution and structure of the step structures 332 are the same as those in the second embodiment, so details are not repeated here.
  • the structure and function of the outer trench 333 will be described in detail below.
  • the outer groove 333 is used to accommodate the external ambient gas.
  • the gas forms a second high-pressure sealing area in the outer groove 333 to prevent the external ambient gas from entering the first gas distribution ring 320 or the second gas distribution ring.
  • Ring 340 to prevent environmental gas from polluting the clean gas supplied by the first gas distribution ring 320 or the second gas distribution ring 340, wherein the pressure in the second high-pressure sealing area is higher than the external ambient pressure and lower than that formed in the inner groove 331 The air pressure of the first high pressure sealing area.
  • outer grooves 333 are located on the outer edge of the dynamic seal ring 330, and are arranged in an annular array along the rotation direction of the dynamic seal ring 330 at a second tangential angle ⁇ , and the second tangential angle ⁇ is The included angle between the outer groove 333 and the radial direction of the dynamic seal ring 330 , the second tangential angle ⁇ is 0° ⁇ 30°, for example, ⁇ is 15°.
  • the structure and function of the outer groove 333 are similar to those of the inner groove 131 in the first embodiment.
  • the outer groove 333 is also narrowed, and has a first end 3331 and a second end 3332, the width of the first end 3331 is greater than the width of the second end 3332, the first end 3331 is far away from the central shaft 310, and the second end 3332 is close to the center Shaft 310.
  • the bottom surface of the outer groove 333 may be a plane. It can be understood that, in order to further improve the sealing effect, the bottom surface of the outer groove 333 may also be inclined.
  • a wafer holding device for holding a wafer according to one embodiment of the present invention.
  • the wafer holding device includes a chuck 400 and a rotating shaft 500, and the rotating shaft 500 adopts any rotating shaft in Embodiment 1, Embodiment 2 or Embodiment 3 according to the specific process design.
  • the central rotating shaft 510 of the rotating shaft 500 is connected to and drives the chuck 400 to rotate.
  • the chuck 400 is used to hold the wafer w, and an air outlet duct 410 is arranged inside the chuck 400 .
  • the air outlet of the air inlet pipe 511 of the rotating shaft 500 is connected to the air outlet pipe 410 of the chuck 400.
  • the air inlet pipe 511 of the rotating shaft 500 corresponds to the air outlet pipe 410 one by one, that is, one air inlet pipe 511 is one air outlet pipe 410 provides gas.
  • one or more gas outlet ducts 410 may be provided inside the chuck 400 , such as the wafer holding device shown in FIG. 14 , and two gas outlet ducts 410 are provided in the chuck 400 .
  • the upper surface of the chuck 400 has several Bernoulli air outlet holes, correspondingly, an air outlet duct 410 can be arranged inside the chuck 400, and the air outlet duct 410 is used for the Bernoulli outlet on the chuck 400.
  • the air holes provide gas for keeping the wafer w on the chuck 400 in a suspended state.
  • the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, correspondingly, two air outlet ducts 410 can be arranged inside the chuck 400, one of which is used for Provide gas for the Bernoulli vent hole on the chuck 400, for keeping the wafer w on the chuck 400 in a suspended state; another gas outlet pipe 410 is used for providing gas for the lift vent hole on the chuck 400, for To float the wafer w held on the chuck 400 to the height of the pick-and-place sheet.
  • the upper surface of the chuck 400 has several Bernoulli air outlets and several lifting air outlets, and at least one set of clamping pins driven by cylinders is arranged on the edge of the chuck 400, correspondingly , three gas outlet pipes 410 can be arranged inside the chuck 400, one of which is used to provide gas for the Bernoulli air outlet on the chuck 400, and is used to keep the wafer w on the chuck 400 in a suspended state; A gas outlet pipe 410 is used to provide gas for the lifting air hole on the chuck 400, and is used to blow the wafer w held on the chuck 400 to the height of the pick-and-place sheet; The air cylinders of at least one set of clamping pins provide gas for driving the cylinders to clamp or release the wafer w.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Sealing Using Fluids, Sealing Without Contact, And Removal Of Oil (AREA)
  • Gasket Seals (AREA)

Abstract

La présente invention concerne un arbre rotatif qui comprend un arbre rotatif central, des premières bagues de distribution de gaz emmanchés coaxialement sur le côté extérieur de l'arbre rotatif central et des bagues d'étanchéité dynamiques fixées coaxialement sur le côté extérieur de l'arbre rotatif central ; les bagues d'étanchéité dynamiques et les premières bagues de distribution de gaz sont disposées en alternance ; les surfaces d'extrémité des bagues d'étanchéité dynamiques opposées aux premières bagues de distribution de gaz comportent une pluralité de rainures internes ; les rainures internes sont utilisées pour recevoir le gaz qui a fui à partir des premières bagues de distribution de gaz ; lorsque l'arbre rotatif central tourne, le gaz forme des zones d'étanchéité à haute pression dans les rainures internes pour empêcher une fuite de gaz des premières bagues de distribution de gaz. Dans la présente invention, les bagues d'étanchéité dynamiques sont disposées à des positions adjacentes aux premières bagues de distribution de gaz de l'arbre rotatif et lorsque les bagues d'étanchéité dynamiques tournent avec l'arbre rotatif central, au moyen d'une accélération centrifuge et d'un rétrécissement des formes des rainures internes dans les bagues d'étanchéité dynamiques, la pression du gaz de fuite dans les rainures internes augmente pour former des zones d'étanchéité à haute pression de façon à empêcher une fuite continue du gaz fourni par les premières bagues de distribution de gaz, ce qui permet d'assurer que le volume d'alimentation en gaz de l'arbre rotatif satisfait les exigences de traitement, améliorant ainsi la stabilité du procédé. La présente invention concerne également un dispositif de maintien de tranche utilisant l'arbre rotatif.
PCT/CN2022/133993 2021-12-09 2022-11-24 Dispositif de maintien de tranche et arbre rotatif associé WO2023103794A1 (fr)

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CN202111497672.4A CN116259571A (zh) 2021-12-09 2021-12-09 晶圆保持装置及其旋转轴

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086566A (ja) * 2001-09-07 2003-03-20 Supurauto:Kk 基板処理装置及び方法
CN103629360A (zh) * 2013-12-03 2014-03-12 北京航空航天大学 一种带有螺旋槽的气体端柱面组合式密封装置
CN107615443A (zh) * 2014-06-06 2018-01-19 盛美半导体设备（上海）有限公司 去除晶圆背面边缘薄膜的装置与方法
US20190203840A1 (en) * 2016-09-14 2019-07-04 Eagle Industry Co., Ltd. Mechanical seal
CN111911633A (zh) * 2020-07-03 2020-11-10 江苏海洋大学 一种新型自平衡式主动抑漏迷宫密封装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086566A (ja) * 2001-09-07 2003-03-20 Supurauto:Kk 基板処理装置及び方法
CN103629360A (zh) * 2013-12-03 2014-03-12 北京航空航天大学 一种带有螺旋槽的气体端柱面组合式密封装置
CN107615443A (zh) * 2014-06-06 2018-01-19 盛美半导体设备（上海）有限公司 去除晶圆背面边缘薄膜的装置与方法
US20190203840A1 (en) * 2016-09-14 2019-07-04 Eagle Industry Co., Ltd. Mechanical seal
CN111911633A (zh) * 2020-07-03 2020-11-10 江苏海洋大学 一种新型自平衡式主动抑漏迷宫密封装置

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