WO2023100463A1 - 筐体及びプローバ - Google Patents

筐体及びプローバ Download PDF

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Publication number
WO2023100463A1
WO2023100463A1 PCT/JP2022/036737 JP2022036737W WO2023100463A1 WO 2023100463 A1 WO2023100463 A1 WO 2023100463A1 JP 2022036737 W JP2022036737 W JP 2022036737W WO 2023100463 A1 WO2023100463 A1 WO 2023100463A1
Authority
WO
WIPO (PCT)
Prior art keywords
side frame
housing
prober
wafer
floor base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/036737
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
秀明 長島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to KR1020247017579A priority Critical patent/KR102707853B1/ko
Priority to MYPI2024003091A priority patent/MY206652A/en
Priority to CN202280079960.4A priority patent/CN118355479A/zh
Publication of WO2023100463A1 publication Critical patent/WO2023100463A1/ja
Priority to US18/731,040 priority patent/US12399215B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2893—Handling, conveying or loading, e.g. belts, boats, vacuum fingers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to a prober for inspecting the electrical characteristics of a plurality of semiconductor devices (chips) formed on a semiconductor wafer, particularly a prober housing having a plurality of measuring sections stacked in multiple stages, and its housing.
  • the present invention relates to a prober to which a housing is applied.
  • the semiconductor manufacturing process has a large number of processes, and various inspections are performed in various manufacturing processes in order to improve quality assurance and yield. For example, at the stage where a plurality of semiconductor device chips are formed on a semiconductor wafer, the electrode pads of the semiconductor devices of each chip are connected to the test head, the power supply and test signals are supplied from the test head, and the semiconductor devices are output. A wafer level test is performed to electrically test whether the device operates normally by measuring signals with a test head.
  • Wafer level inspection is performed using a prober that contacts the electrode pads of each chip on the wafer.
  • the probes are electrically connected to the terminals of the test head, and power and test signals are supplied from the test head to each chip through the probes. to measure.
  • a prober has been proposed that has a plurality of measurement units that are stacked in multiple stages (see Patent Documents 1 and 2, for example). Since this prober has a hierarchical structure (multi-stage structure) in which multiple measurement units are stacked in multiple stages, wafer-level inspection can be performed for each measurement unit, minimizing increases in installation area and equipment costs. Throughput can be improved.
  • Patent Document 3 in an inspection apparatus in which a plurality of testers are arranged in a multistage manner, a transfer stage for transferring a wafer to the testers of each layer is provided for each layer, and the movement of the transfer stage of each layer is controlled.
  • the controller controls to restrict the operation of the carrier stages of the other layers, so that the carrier stages of the other layers are operated. Techniques are disclosed for suppressing the effects of the resulting vibrations.
  • an alignment device for detachably holding a wafer chuck and performing relative alignment (alignment) between the wafer held by the wafer chuck and the probe card. (moving stage) is provided for each layer.
  • This alignment device is configured to be mutually movable between a plurality of measurement units arranged on each layer.
  • each layer is provided with an alignment device that is mutually movable between a plurality of measurement units. Therefore, when the alignment device is moved in one layer, the vibration caused by the movement of the alignment device causes vibration of the housing. It has a structure that facilitates propagation to measurement units arranged on other layers via the frame that constitutes the body. As a result, alignment accuracy deteriorates, and sufficient contact accuracy between the wafer and the probes of the probe card cannot be ensured, which may lead to deterioration in inspection accuracy.
  • Patent Document 3 is effective only for vibrations caused by the movement of the carrier stage, and vibrations that occur constantly due to other causes, such as vibrations caused by abnormalities in test heads on other layers. There is also the problem that there is no effect on
  • the present invention has been made in view of such circumstances. It is an object of the present invention to provide a housing for a prober capable of effectively reducing the influence of vibrations generated in a prober and a prober to which the housing is applied.
  • a prober housing is a prober housing having a hierarchical structure in which a plurality of measurement units are stacked in multiple stages, and includes a floor base that constitutes a floor surface of each layer of the hierarchical structure. , side frame bodies located on both sides of the measuring unit, which are arranged between the floor base of one layer and the floor base of another layer located above the first layer among the plurality of layers;
  • the side frame body includes a first side frame erected on the floor base of one story and supporting the lower surface side of the floor base of another story, and at a position different from the first side frame. and a second side frame which is erected on the floor base of the second floor and supports the measuring section constituent members arranged in the measuring section.
  • the side frame body is arranged on a hierarchy other than the highest hierarchy among the plurality of hierarchies.
  • a housing for a prober has, in the second aspect, a head plate having a holding portion that holds the measuring portion constituent members, and the lower surface side of the head plate is supported by the second side frame. .
  • the second side frame is provided side by side at a position adjacent to the first side frame.
  • the measuring section component is a pogo frame, a probe card, or a test head.
  • a prober includes the housing for the prober according to any one of the first to fifth aspects, wherein at least two measuring units are provided on one layer, and an object to be inspected is provided.
  • a moving stage capable of moving a wafer to each of the measurement units arranged in one hierarchy is provided.
  • the effects of vibrations generated in each layer can be effectively reduced without lowering test throughput. can do.
  • FIG. 1 is an external view showing the overall configuration of a prober according to this embodiment
  • FIG. FIG. 2 is a plan view of the prober shown in FIG. 1
  • FIG. 2 is a diagram (front view) showing the internal structure of the measurement unit of FIG. 1
  • FIG. 2 is a diagram (side view) showing the internal structure of the measurement unit of FIG. 1; It is the schematic which showed the structure of the measurement part.
  • FIG. 4 is a diagram showing a state in which the test head, pogo frame, probe card, and wafer chuck are integrated
  • FIG. 11 is a diagram (front view) showing another configuration example (comparative example) of the housing;
  • FIG 11 is a diagram (side view) showing another configuration example (comparative example) of the housing; It is a figure explaining the effect of the housing
  • FIG. 1 is an external view showing the overall configuration of the prober 100.
  • FIG. 2 is a plan view of the prober 100 shown in FIG.
  • the prober 100 includes a loader section 114 that supplies and retrieves wafers W to be inspected (see FIG. 5), and is arranged adjacent to the loader section 114 to provide a plurality of probes. and a measurement unit 112 having a measurement section 30 .
  • the measurement unit 112 has a plurality of measurement units 30.
  • each measurement unit 30 measures the electrical power of each chip of the wafer W.
  • a physical characteristic inspection (wafer level inspection) is performed.
  • the wafer W inspected by each measurement unit 30 is recovered by the loader unit 114 .
  • the prober 100 also includes an operation panel 121, a control device (not shown) for controlling each part, and the like.
  • the loader section 114 has a load port 118 on which the wafer cassette 120 is placed, and a transfer unit 122 that transfers the wafer W between each measurement section 30 of the measurement unit 112 and the wafer cassette 120 .
  • the transport unit 122 includes a transport unit driving mechanism (not shown), and is configured to be movable in the X and Z directions and rotatable in the ⁇ direction (around the Z direction). Further, the transport unit 122 includes a transport arm 124, and the transport arm 124 can be extended and retracted back and forth by the transport unit driving mechanism.
  • a suction pad (not shown) is provided on the upper surface of the transfer arm 124, and the transfer arm 124 holds the wafer W by vacuum-sucking the rear surface of the wafer W with the suction pad.
  • the wafer W in the wafer cassette 120 is taken out by the transfer arm 124 of the transfer unit 122 and transferred to each measurement section 30 of the measurement unit 112 while being held on its upper surface.
  • the inspected wafer W, which has been inspected is returned from each measuring section 30 to the wafer cassette 120 through the reverse route.
  • FIG. 3 and 4 are diagrams showing the internal structure of the measurement unit 112 of FIG. 3 is a view of the measurement unit 112 viewed from the front side (loader section 114 side), and FIG. 4 is a view of the measurement unit 112 viewed from the side.
  • the measurement unit 112 has a hierarchical structure (multistage structure) in which a plurality of measurement units 30 are stacked in multiple stages. are arranged two-dimensionally along the In this embodiment, as an example, four measurement units 30 are stacked in the X direction in three stages in the Z direction.
  • the measurement unit 112 includes a housing 1 that partitions and forms a plurality of measurement units 30 .
  • the housing 1 has a lattice shape in which a plurality of frames are combined in a lattice. Note that the configuration of the housing 1 will be described later in detail.
  • Each measurement section 30 has the same configuration, and as shown in FIG. and an intervening pogo frame 41 .
  • the test head 43 is supported above the head plate 44 by a test head holding portion (not shown).
  • the test head 43 is electrically connected to the probes 66 of the probe card 42, supplies power and test signals to each chip for electrical inspection, and detects output signals from each chip to operate normally. to measure
  • the head plate 44 is supported by the housing 1 and has a pogo frame mounting portion 53 consisting of a circular opening corresponding to the planar shape of the pogo frame 41 .
  • the pogo frame mounting portion 53 has positioning pins 63 , and the pogo frame 41 is fixed to the pogo frame mounting portion 53 while being positioned by the positioning pins 63 .
  • the method of fixing the pogo frame 41 is not particularly limited, but for example, a method of fixing the pogo frame 41 to the support surface (adsorption surface) of the pogo frame mounting portion 53 by vacuum-adsorption with a suction means (not shown). preferred.
  • fixing means other than vacuum suction, mechanical fixing means such as screws may be used.
  • the pogo frame 41 electrically connects the terminals formed on the lower surface of the test head 43 (the surface facing the pogo frame 41) and the terminals formed on the upper surface of the probe card 42 (the surface facing the pogo frame 41). It has a number of pogo pins (not shown) that connect to the Ring-shaped sealing members 60 and 62 are formed on the outer periphery of the upper surface (the surface facing the test head 43) and the lower surface (the surface facing the probe card 42) of the pogo frame 41, respectively. Then, the space surrounded by the test head 43, the pogo frame 41 and the sealing member 60 and the space surrounded by the probe card 42, the pogo frame 41 and the sealing member 62 are decompressed by suction means (not shown), thereby performing the test.
  • the head 43, pogo frame 41, and probe card 42 are integrated (see FIG. 6).
  • the probe card 42 has a large number of probes 66 corresponding to the electrodes of each chip of the wafer W.
  • Each probe 66 is formed to protrude downward from the lower surface of the probe card 42 (the surface facing the wafer chuck 150), and each terminal provided on the upper surface of the probe card 42 (the surface facing the pogo frame 41). is electrically connected to Therefore, when the test head 43 , the pogo frame 41 and the probe card 42 are integrated, each probe 66 is electrically connected to each terminal of the test head 43 via the pogo frame 41 .
  • the probe card 42 of this example has a large number of probes 66 corresponding to the electrodes of all the chips on the wafer W to be inspected. Simultaneous inspections are performed.
  • the wafer chuck 150 sucks and fixes the wafer W by vacuum suction or the like.
  • the wafer chuck 150 is detachably supported by an alignment device 13 to be described later, and is movable in the X, Y, Z, and ⁇ directions by the alignment device 13 .
  • a ring-shaped sealing member 64 is provided on the outer peripheral portion of the upper surface (wafer mounting surface) of the wafer chuck 150 . Then, the space surrounded by the probe card 42 , the wafer chuck 150 and the seal member 64 is decompressed by suction means (not shown), thereby drawing the wafer chuck 150 toward the probe card 42 . As a result, the probes 66 of the probe card 42 are brought into contact with the electrode pads of the chips of the wafer W so that the inspection can be started.
  • a heating/cooling source as a heating/cooling source is provided so that the chip can be tested for electrical characteristics at a high temperature (eg, 150° C. maximum) or at a low temperature (eg, ⁇ 40° C. minimum).
  • a mechanism (not shown) is provided.
  • the heating/cooling mechanism a known suitable heater/cooler can be adopted.
  • Various heating/cooling devices are conceivable, such as a one-layer structure heating/cooling device in which a cooling pipe with a heater wound around a conductor is embedded.
  • a thermal fluid may be circulated, or a Peltier element may be used.
  • the measurement unit 112 further includes an alignment device 13 that detachably supports the wafer chuck 150 .
  • Alignment device 13 is provided for each stage, and is configured to be mutually movable between a plurality of measurement units 30 arranged on each layer (each stage) by an alignment device driving mechanism (not shown). That is, the alignment device 13 is shared by a plurality of (four in this example) measurement units 30 arranged in the same hierarchy (stage), and the alignment device 13 is shared between the plurality of measurement units 30 arranged in the same hierarchy. move to each other.
  • the alignment device 13 is an example of the "moving stage" of the present invention.
  • the alignment device 13 when the alignment device 13 is moved to each measurement unit 30, it is fixed to a positioning and fixing device (not shown), and the wafer chuck 150 is moved in the X, Y, Z, and ⁇ directions by the above-described alignment device drive mechanism. Relative alignment between the wafer W and the probe card 42 held by the wafer W is performed.
  • the alignment device 13 includes a needle position detection camera and a wafer alignment camera to detect the relative positional relationship between the electrodes of the chips of the wafer W held by the wafer chuck 150 and the probes 66.
  • the alignment device 13 sucks and fixes the wafer chuck 150 by vacuum suction or the like, any fixing means other than the vacuum suction may be used as long as the wafer chuck 150 can be fixed. You may do so. Further, the alignment device 13 is provided with a positioning member (not shown) so that the relative positional relationship with the wafer chuck 150 is always constant.
  • the wafer W in the wafer cassette 120 is taken out by the transfer arm 124 of the transfer unit 122 and held on the upper surface of the transfer arm 124. are conveyed to each measuring section 30 of the measuring unit 112 at .
  • the alignment device 13 provided for each layer (stage) moves to a predetermined measurement section 30, and the wafer chuck 150 is positioned on the upper surface of the alignment device 13 and fixed by suction.
  • the alignment device 13 moves the wafer chuck 150 to a predetermined transfer position. Then, when the wafer W is transferred from the transfer unit 122 of the loader section 114 , the wafer W is held on the upper surface of the wafer chuck 150 .
  • the alignment device 13 moves the wafer chuck 150 holding the wafer W to a predetermined alignment position, and the electrode of the chip of the wafer W held by the wafer chuck 150 is detected by a needle position detection camera and a wafer alignment camera (not shown). and the probes 66, and based on the detected positional relationships, the wafer chuck 150 is moved in the X, Y, Z, and .theta. Relative alignment with the card 42 is performed.
  • the alignment device 13 moves the wafer chuck 150 to a predetermined measurement position (a position facing the probe card 42), and raises the wafer chuck 150 to a predetermined height (specifically, wafer The wafer chuck 150 is raised until the seal member 64 formed on the upper surface of the chuck 150 reaches a height where it contacts the lower surface of the probe card 42 (the surface facing the wafer chuck 150). At this time, before the seal member 64 contacts the lower surface of the probe card 42 (that is, before the space surrounded by the probe card 42, the wafer chuck 150, and the seal member 64 becomes a sealed space), a suction means (not shown) Aspiration is preferably initiated.
  • the suction means is in a state of being sucked, so it is possible to prevent the influence of the reaction force due to the compression of the space. It should be noted that the suction by the suction means may be started at the same time when the seal member 64 contacts the lower surface of the probe card 42 .
  • the alignment device 13 releases the fixation of the wafer chuck 150 .
  • the wafer chuck 150 is separated from the alignment device 13 .
  • the space surrounded by the probe card 42, the wafer chuck 150, and the seal member 64 is decompressed by suction by the suction means, whereby the wafer chuck 150 is drawn toward the probe card 42, and the probe card 42 and the wafer are separated from each other.
  • the chuck 150 is brought into close contact, and each probe 66 of the probe card 42 contacts the electrode pads of each chip of the wafer W with uniform contact pressure.
  • the measurement unit 30 is in a state in which the test head 43, pogo frame 41, probe card 42, and wafer chuck 150 are integrated, and the wafer level inspection can be started.
  • a power supply and a test signal are supplied from the test head 43 to each chip on the wafer W, and the signal output from the chip is detected to perform an electrical operation test.
  • the wafer W is supplied onto the wafer chuck 150 in the same procedure, and after the alignment operation and contact operation are completed in each measurement unit 30, the chips on the wafer W are simultaneously inspected. It is done sequentially. That is, in each measuring unit 30, a power supply and a test signal are supplied from the test head 43 to each chip on the wafer W, and the signal output from the chip is detected to perform an electrical operation test.
  • the alignment device 13 is sequentially moved to each measuring unit 30, and the wafer chuck 150 holding the inspected wafer W is recovered.
  • the alignment device 13 moves to the measurement unit 30 that has completed the inspection, the alignment device 13 rises to a position where its upper surface abuts against the wafer chuck 150, and is surrounded by the probe card 42, the wafer chuck 150, and the sealing member 64. The pressure in the space is released. Then, the alignment device 13 positions and fixes the wafer chuck 150 on its upper surface. Further, the alignment device 13 moves the wafer chuck 150 to a predetermined transfer position, releases the inspected wafer W from the wafer chuck 150 , and transfers it to the transfer unit 122 . The inspected wafer W transferred to the transfer unit 122 is held by the transfer arm 124 and returned to the wafer cassette 120 arranged in the loader section 114 .
  • one wafer chuck 150 is assigned to each measurement unit 30. May be shared.
  • the alignment device 13 moves the wafer chuck 150 between the plurality of measurement units 30 sharing the wafer chuck 150 .
  • the housing 1 is an example of the "prober housing" of the present invention.
  • the housing 1 of this embodiment forms a plurality of sections corresponding to the measurement units 30 on each floor by combining a plurality of frames in a grid pattern.
  • each layer (this embodiment The frame (the side frame body 20) arranged in the layer except for the uppermost layer has a divided frame structure.
  • the side frame body 20 arranged in one layer consists of a first side frame 21 supporting another layer arranged above and a measuring section in the one layer. a second side frame 22 for supporting the measuring section components (including the head plate 44, pogo frame 41, probe card 42, and test head 43) arranged at 30;
  • each layer is referred to as a first layer, a second layer, and a third layer in order from the bottom.
  • the first stage is the bottom stage and the third stage is the top stage.
  • the structure of the uppermost layer differs from that of the other layers.
  • the structures of the layers other than the top layer that is, the structures of the first and second layers in FIGS. 3 and 4 will be described.
  • Each floor other than the top floor includes a floor base 10 that constitutes the floor surface of each floor of the hierarchical structure, and a plurality of side frame bodies 20 provided between the floor bases 10 of each floor.
  • the floor base 10 is long in the X direction (the X direction is the longitudinal direction) and has a flat plate shape parallel to the XY plane. It is formed.
  • the floor base 10 preferably serves as the floor base 10 of the layer directly below the floor on the floors other than the uppermost floor.
  • the floor base 10 on the third level also serves as the ceiling of the floor base 10 on the second level.
  • a guide rail (not shown) that guides the movement of the alignment device 13 in the X direction is preferably provided on the upper surface of the floor base 10 of each story.
  • the plurality of side frame bodies 20 are arranged between the floor base 10 of a certain story and the floor base 10 of another story located on the upper story of the story, and both ends of the floor base 10 in the Y direction ( (both sides in the Y direction).
  • the side frame body 20 There are two types of the side frame body 20 : a first side frame 21 and a second side frame 22 provided separately from the first side frame 21 .
  • the first side frame 21 has, for example, a columnar shape extending in the Z direction.
  • One end of the first side frame 21 is arranged on the upper surface of the floor base 10 of a certain story, for example, the end in the Y direction, and the other end is the floor base of another story located on the upper level of that story. 10, for example, at the end in the Y direction.
  • the first side frame 21 is erected on the upper surface (the surface on which the guide rails are formed) of the floor base 10 of a certain story, and the floor base 10 of another story located above the same story. It supports the lower surface (the surface opposite to the surface on which the guide rail is formed).
  • the first side frame 21 of the second layer supports the floor base 10 of the third (top) layer.
  • a layered structure is formed in which the floor bases 10 are stacked in multiple stages in the Z direction.
  • the second side frame 22 is erected on the upper surface of the floor base 10 of each story at a position different from that of the first side frame 21 .
  • the second side frame 22 is arranged side by side at a position adjacent to the first side frame 21 .
  • the second side frames 22 are arranged at regular intervals in the X direction. Specifically, in the X direction, the second side frames 22 are arranged between the measuring units 30 and outside the measuring units 30 at both ends. .
  • Each second side frame 22 has, for example, a substantially gate shape including two pillars 221 extending in the Z direction and a beam 222 spanning between the two pillars 221 and extending in the Y direction.
  • the shape of the beam portion 222 is not necessarily a straight rod shape, and may be appropriately changed according to the shape and desired arrangement of the measuring portion constituent members (described later).
  • the two pillars 221 of the second side frame 22 are arranged, for example, near both ends of each measuring part 30 in the Y direction.
  • the measurement section constituent members arranged in each measurement section 30 of each layer other than the top layer include a head plate 44 , a pogo frame 41 , a probe card 42 and a test head 43 .
  • the head plate 44 is a plate-like member arranged in the measuring section 30, and has the pogo frame attachment section 53 (see FIG. 5) as described above.
  • the pogo frame 41 is fixed to the pogo frame mounting portion 53 of the head plate 44, and the test head 43 and the probe card 42 are integrated on the upper and lower surfaces of the pogo frame 41 by suction means (not shown). It has become. That is, the head plate 44 is a member that directly or indirectly supports the pogo frame 41, the probe card 42, and the test head 43, which are components of the measuring section.
  • the head plate 44 configured in this manner is supported by the second side frame 22 (more specifically, the beam 222).
  • the position at which the head plate 44 is supported by the second side frame 22 is preferably the lower surface of the head plate 44, but is not necessarily limited to this, and may be at another position (for example, the side surface of the head plate 44).
  • the measurement section constituent members arranged in each measurement section 30 on each floor other than the top floor are directly or indirectly supported by the second side frame 22, respectively. At 30, the tests described above are performed.
  • the first side frame 21 that supports the floor base 10 of the upper floor and the second side frame 22 that supports the measuring section constituent members arranged on the own floor are separated. placed on the body.
  • the uppermost layer includes a floor base 10 , a plurality of uppermost side frame bodies 23 and a frame portion 24 .
  • the uppermost side frame body 23 is similar to the side frame body 20 of another layer as in a modified example (see FIG. 11) to be described later.
  • the side frame bodies 20 are arranged in two different frames (first side frames 21 and the second side frame 22). Further, the overall structure of the housing 1 is stabilized by simplifying the structure of the uppermost layer to reduce its weight.
  • the uppermost side frame body 23 has a simpler configuration than the side frame bodies 20 in other layers. More specifically, the uppermost side frame body 23 has both the function of supporting the ceiling (not shown) and the function of supporting the members constituting the measuring section. In other words, it fulfills the function of the first side frame 21 and the function of the second side frame 22 in the side frame body 20 of the other layer.
  • the uppermost side frame body 23 is arranged at a position substantially corresponding to the second side frame 22 and has substantially the same shape as the second side frame 22 . That is, the uppermost side frame body 23, like the second side frame 22, is erected on the upper surface of the floor base 10 of the uppermost layer. In addition, the uppermost side frame bodies 23 are arranged at regular intervals in the X direction. be.
  • the uppermost side frame body 23 has a substantially gate shape including two pillars 231 extending in the Z direction and a beam 232 spanning between the two pillars 231 and extending in the Y direction.
  • the upper end side of the column portion 231 extends beyond the beam portion 232 to the frame portion 24 that constitutes the ceiling of the uppermost floor.
  • the shape of the beam portion 232 is appropriately changed according to the shape and desired arrangement of the measuring portion constituent members.
  • the two pillars 231 of the uppermost side frame body 23 are arranged, for example, in the vicinity of both ends of each measuring section 30 in the Y direction.
  • the measurement section constituent members arranged in each measurement section 30 of the uppermost layer include the head plate 44, the pogo frame 41, the probe card 42, and the test head 43, as in the layers other than the uppermost layer.
  • the head plate 44 in the uppermost layer is a member that directly or indirectly supports the pogo frame 41, the probe card 42, and the test head 43, which are constituent members of the measuring section, similarly to the layers other than the uppermost layer. .
  • the head plate 44 in the uppermost layer is supported by the uppermost side frame body 23 (more specifically, the beams 232).
  • the position at which the head plate 44 is supported by the uppermost side frame body 23 is preferably the lower surface of the head plate 44, but is not necessarily limited to this, and may be at another position (for example, the side surface of the head plate 44).
  • the measuring section constituent members arranged in each measuring section 30 on the uppermost level are directly or indirectly supported by the uppermost side frame body 23 .
  • the frame portion 24 connects the Z-direction upper end portions of the plurality of uppermost side frame bodies 23 , and the ceiling (not shown) is fixed to the frame portion 24 .
  • FIGS. 7 and 8 are diagrams showing another configuration example (comparative example) of the housing applied to the prober.
  • FIG. 7 is a front view of the housing according to the comparative example
  • FIG. 8 is a side view of the housing according to the comparative example.
  • the side frame 50 of each floor has the function of supporting the floor base 10 of the upper floor and the function of supporting the measuring section constituent members. It has an integrated frame structure.
  • the vibration is transmitted through the side frames 50 and transferred to the upper and lower stages of the story. is easily propagated to the floor base 10 of the hierarchy. As a result, even after the movement of the alignment device 13 is completed, there is a problem that the stabilization time required for the vibration due to the movement of the alignment device 13 to settle becomes longer.
  • the vibration of the floor base 10 of a given story directly propagates to the side frames 50 of other stories located above and below the same story, thereby causing the side frames 50 of other stories to move.
  • the alignment accuracy and the result of the wafer level inspection are adversely affected due to the vibration of the measuring section constituent members supported by the frame 50 .
  • the first side frame 21 that supports the floor base 10 of the upper layer and the second side frame 22 that supports the measuring section constituent members are separate bodies.
  • a structured split frame structure is employed. Therefore, when the alignment device 13 moves and the floor base 10 vibrates on a certain story, even if the vibration propagates through the first side frame 21 to the floor base 10 on another story, the first side It is difficult to propagate to the measurement section constituent members supported by the second side frame 22 which is separate from the section frame 21 .
  • the housing 1 according to the present embodiment among the alignment devices 13 arranged on each layer, it is necessary to restrict the operation of the alignment devices 13 on other layers during the operation of the alignment device 13 on one layer. Therefore, it is possible to effectively suppress the influence of the vibration caused by the movement of the alignment device 13 without the disadvantage of worsening the throughput of the wafer level inspection.
  • the housing 1 according to the present embodiment by adopting the above-described split frame structure, another cause other than the movement of the alignment device 13, for example, each component (for example, the test head) constituting the measurement unit 30 43, etc.), it is possible to suppress the influence of the vibration on the measurement units 30 of other layers.
  • FIG. 9 shows a graph of the case where vibration of a certain amplitude is applied to the floor base 10 of a certain story for a certain period of time in the housing according to the comparative example shown in FIGS. 5 is a graph schematically showing how vibration occurs in a partial frame 50.
  • FIG. FIG. 10 shows, in the housing 1 according to the present embodiment, when vibration of a certain amplitude is applied to the floor base 10 for a certain period of time in the same manner as in the comparative example, the second side portion of the floor located in the lower stage of the floor. 4 is a graph schematically showing how the frame 22 vibrates.
  • the graphs of FIGS. 9 and 10 show output waveforms of the vibrometer. In these graphs, the horizontal axis indicates time in units of seconds, and the vertical axis indicates output voltage (corresponding to the amplitude of vibration) in units of mV.
  • the difference between the maximum value and the minimum value of the output voltage is caused by the propagation of vibration generated in a certain story, and is generated in the measurement section constituent members in the lower story. Corresponds to the amplitude of vibration.
  • the difference between the maximum value and the minimum value of the output voltage of the vibrometer is about 129 mV, and this value corresponds to the second side frame 22 of the lower layer in the housing according to the comparative example. corresponds to the amplitude of vibration at
  • the difference between the maximum value and the minimum value of the output voltage of the vibrometer is about 71.656 mV, and this value It corresponds to the amplitude of the vibration in the two side frames 22 .
  • the housing 1 according to the present embodiment can reduce the amplitude by about 40%, that is, the magnitude of vibration, compared to the housing according to the comparative example. .
  • FIG. 11 shows, as a modified example, a schematic configuration diagram (side view) of a measurement unit 112 to which a housing 2 having the same configuration as that of the other layers is applied to the uppermost layer.
  • a front view of the housing 2 according to the modification is omitted because it is the same as FIG.
  • the housing 2 according to this modification can also achieve the above effects.
  • the number of layers in the measurement unit 112 and the number of measurement units 30 are not limited to the examples shown in FIGS.
  • the side frame body 20 supports the first side frame 21 that supports the floor base 10 of the upper layer and the measurement section constituent members.
  • a split frame structure is employed in which the second side frame 22 is configured separately.
  • the housing 1 since the movement of the alignment device 13 is not restricted, the influence of vibration on the alignment accuracy and wafer level inspection results is suppressed while maintaining good throughput of the wafer level inspection by the prober. can do.
  • the influence of vibration is reduced by adopting the split frame structure. Even if there is a
  • Reference Signs List 1 2 housing 10 floor base 13 alignment device 20 side frame body 21 first side frame 22 second side frame 23 uppermost side frame body 24 Frame portion 30 Measurement portion 41 Pogo frame 42 Probe card 43 Test head 44 Head plate 50 Side frame 53 Pogo frame mounting portion 60, 62, 64 Seal member , 63... positioning pin, 66... probe, 221... column, 222... beam, 231... column, 232... beam, 100... prober, 112... measurement unit, 114... loader, 118... load port, 120 ... Wafer cassette, 121 ... Operation panel, 122 ... Transfer unit, 124 ... Transfer arm, 150 ... Wafer chuck, W ... Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2022/036737 2021-12-02 2022-09-30 筐体及びプローバ Ceased WO2023100463A1 (ja)

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KR1020247017579A KR102707853B1 (ko) 2021-12-02 2022-09-30 하우징 및 프로버
MYPI2024003091A MY206652A (en) 2021-12-02 2022-09-30 Housing and prober
CN202280079960.4A CN118355479A (zh) 2021-12-02 2022-09-30 壳体以及探测器
US18/731,040 US12399215B2 (en) 2021-12-02 2024-05-31 Housing and prober

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JP2021-196404 2021-12-02
JP2021196404A JP2023082554A (ja) 2021-12-02 2021-12-02 筐体及びプローバ

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JP (1) JP2023082554A (enExample)
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KR20210019193A (ko) * 2019-08-12 2021-02-22 주식회사 쎄믹스 그룹 프로버 시스템 및 이의 설치 방법

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US7100340B2 (en) * 2001-08-31 2006-09-05 Asyst Technologies, Inc. Unified frame for semiconductor material handling system
JP5120018B2 (ja) * 2007-05-15 2013-01-16 東京エレクトロン株式会社 プローブ装置
US9304412B2 (en) * 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
KR20110039763A (ko) * 2009-10-12 2011-04-20 뉴센트 주식회사 프로브카드 자동클리닝시스템
JP6042760B2 (ja) * 2013-03-28 2016-12-14 東京エレクトロン株式会社 プローブ装置
JP6267928B2 (ja) * 2013-10-29 2018-01-24 東京エレクトロン株式会社 ウエハ検査装置の整備用台車及びウエハ検査装置の整備方法
JP5967510B1 (ja) 2015-03-24 2016-08-10 株式会社東京精密 プローバ
JP6908858B2 (ja) * 2015-03-25 2021-07-28 株式会社東京精密 筐体
JP6041175B2 (ja) 2015-03-30 2016-12-07 株式会社東京精密 プローバ
JP6652361B2 (ja) * 2015-09-30 2020-02-19 東京エレクトロン株式会社 ウエハ検査装置及びウエハ検査方法
JP6365953B1 (ja) * 2017-03-07 2018-08-01 株式会社東京精密 プローバ
JP2020096028A (ja) * 2018-12-11 2020-06-18 東京エレクトロン株式会社 検査装置、及び、検査方法
JP7458161B2 (ja) 2019-09-24 2024-03-29 東京エレクトロン株式会社 検査装置の制御方法および検査装置

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KR20210019193A (ko) * 2019-08-12 2021-02-22 주식회사 쎄믹스 그룹 프로버 시스템 및 이의 설치 방법

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US20240319264A1 (en) 2024-09-26
KR102707853B1 (ko) 2024-09-23
MY206652A (en) 2024-12-30
KR20240091037A (ko) 2024-06-21
US12399215B2 (en) 2025-08-26
CN118355479A (zh) 2024-07-16
JP2023082554A (ja) 2023-06-14

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