WO2023085008A1 - Composition de polissage chimico-mécanique, son procédé de production et procédé de polissage - Google Patents
Composition de polissage chimico-mécanique, son procédé de production et procédé de polissage Download PDFInfo
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- WO2023085008A1 WO2023085008A1 PCT/JP2022/038748 JP2022038748W WO2023085008A1 WO 2023085008 A1 WO2023085008 A1 WO 2023085008A1 JP 2022038748 W JP2022038748 W JP 2022038748W WO 2023085008 A1 WO2023085008 A1 WO 2023085008A1
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- WO
- WIPO (PCT)
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing composition
- acid
- iron
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 223
- 239000000203 mixture Substances 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000011733 molybdenum Substances 0.000 claims abstract description 89
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 87
- -1 iron(III) compound Chemical class 0.000 claims abstract description 71
- 239000006061 abrasive grain Substances 0.000 claims abstract description 31
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000013522 chelant Substances 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims description 161
- 125000000524 functional group Chemical group 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000011163 secondary particle Substances 0.000 claims description 18
- 150000001768 cations Chemical class 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 9
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 84
- 238000005260 corrosion Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 14
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010408 film Substances 0.000 description 124
- 239000006185 dispersion Substances 0.000 description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 38
- 229910052814 silicon oxide Inorganic materials 0.000 description 37
- 150000003839 salts Chemical class 0.000 description 33
- 238000002360 preparation method Methods 0.000 description 30
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 16
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- 239000002738 chelating agent Substances 0.000 description 14
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 14
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- 239000008119 colloidal silica Substances 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 125000001183 hydrocarbyl group Chemical group 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 11
- 239000002253 acid Substances 0.000 description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 10
- 239000011164 primary particle Substances 0.000 description 10
- 229920003169 water-soluble polymer Polymers 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 150000007522 mineralic acids Chemical class 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 6
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 6
- 235000010724 Wisteria floribunda Nutrition 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 6
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 125000000623 heterocyclic group Chemical group 0.000 description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- GXDMUOPCQNLBCZ-UHFFFAOYSA-N 3-(3-triethoxysilylpropyl)oxolane-2,5-dione Chemical compound CCO[Si](OCC)(OCC)CCCC1CC(=O)OC1=O GXDMUOPCQNLBCZ-UHFFFAOYSA-N 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 125000003342 alkenyl group Chemical group 0.000 description 5
- 150000003973 alkyl amines Chemical class 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- GUOKDOCJBBBYHE-UHFFFAOYSA-N 3-[2-carboxyethyl(hexadecyl)amino]propanoic acid Chemical compound CCCCCCCCCCCCCCCCN(CCC(O)=O)CCC(O)=O GUOKDOCJBBBYHE-UHFFFAOYSA-N 0.000 description 4
- FIDDSQGCUOJNBD-UHFFFAOYSA-N 3-[2-carboxyethyl(octadecyl)amino]propanoic acid Chemical compound CCCCCCCCCCCCCCCCCCN(CCC(O)=O)CCC(O)=O FIDDSQGCUOJNBD-UHFFFAOYSA-N 0.000 description 4
- VSERROVCUNXRNS-UHFFFAOYSA-N 3-[2-carboxyethyl(tetradecyl)amino]propanoic acid Chemical compound C(CCCCCCCCCCCCC)N(CCC(=O)O)CCC(=O)O VSERROVCUNXRNS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- DMQQXDPCRUGSQB-UHFFFAOYSA-N 2-[3-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCN(CC(O)=O)CC(O)=O DMQQXDPCRUGSQB-UHFFFAOYSA-N 0.000 description 3
- XYYUAOIALFMRGY-UHFFFAOYSA-N 3-[2-carboxyethyl(dodecyl)amino]propanoic acid Chemical compound CCCCCCCCCCCCN(CCC(O)=O)CCC(O)=O XYYUAOIALFMRGY-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- 230000004931 aggregating effect Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001530 fumaric acid Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
- 150000003852 triazoles Chemical group 0.000 description 3
- FSKNXCHJIFBRBT-UHFFFAOYSA-N 2-[2-[2-(dodecylamino)ethylamino]ethylamino]acetic acid Chemical compound CCCCCCCCCCCCNCCNCCNCC(O)=O FSKNXCHJIFBRBT-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- IXOCGRPBILEGOX-UHFFFAOYSA-N 3-[3-(dodecanoylamino)propyl-dimethylazaniumyl]-2-hydroxypropane-1-sulfonate Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)CC(O)CS([O-])(=O)=O IXOCGRPBILEGOX-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 238000003756 stirring Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/141—Preparation of hydrosols or aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
La présente invention concerne une composition de polissage chimico-mécanique avec laquelle il est possible de polir un film de molybdène et un film de dioxyde de silicium à un taux de polissage stable, et de stopper la corrosion du film de molybdène. Une composition de polissage chimico-mécanique selon la présente invention contient des grains abrasifs (A) et un composé de fer (III), le composé de fer (III) (B) étant un composé chélaté.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-184832 | 2021-11-12 | ||
| JP2021184832 | 2021-11-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023085008A1 true WO2023085008A1 (fr) | 2023-05-19 |
Family
ID=86335578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2022/038748 WO2023085008A1 (fr) | 2021-11-12 | 2022-10-18 | Composition de polissage chimico-mécanique, son procédé de production et procédé de polissage |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW202320159A (fr) |
| WO (1) | WO2023085008A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235317A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| JP2015525483A (ja) * | 2012-06-11 | 2015-09-03 | キャボット マイクロエレクトロニクス コーポレイション | モリブデン研磨のための組成物および方法 |
| JP2019172733A (ja) * | 2018-03-27 | 2019-10-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2021509768A (ja) * | 2018-01-08 | 2021-04-01 | シーエムシー マテリアルズ，インコーポレイティド | 改善されたトポグラフィーを有するタングステンバフ研磨組成物 |
-
2022
- 2022-10-18 WO PCT/JP2022/038748 patent/WO2023085008A1/fr active Application Filing
- 2022-11-01 TW TW111141494A patent/TW202320159A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235317A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| JP2015525483A (ja) * | 2012-06-11 | 2015-09-03 | キャボット マイクロエレクトロニクス コーポレイション | モリブデン研磨のための組成物および方法 |
| JP2021509768A (ja) * | 2018-01-08 | 2021-04-01 | シーエムシー マテリアルズ，インコーポレイティド | 改善されたトポグラフィーを有するタングステンバフ研磨組成物 |
| JP2019172733A (ja) * | 2018-03-27 | 2019-10-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202320159A (zh) | 2023-05-16 |
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