WO2023084923A9 - 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法 - Google Patents
半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Definitions
- the present invention relates to a semiconductor sample evaluation method, a semiconductor sample evaluation apparatus, and a semiconductor wafer manufacturing method.
- the Photo Conductivity Decay method is generally called the PCD method and is widely used for evaluating semiconductor samples.
- Patent Document 1 JP-A-2019-012740 (the entire description thereof is specifically incorporated herein as disclosure)
- Patent Document 2 Japanese Patent Application Laid-Open No. 58-181549 (the entire description thereof is specifically incorporated herein as disclosure)
- Non-Patent Document 1 Akira Usami, Fukuyasu Sone, Koji Murai, Kenji Sano, Laser Research 1984, Vol. 12, No. 10, p. 585-594 (the entire description of which is specifically incorporated herein by reference)
- Non-Patent Document 2 Akira Usami, Shinichi Kandatsu, Atsushi Kudo, Applied Physics, 1980, Vol. 49, No. 12, p. 1192-1197 (the entire descriptions of which are specifically incorporated herein by reference).
- SEMI MF1535 Test Methods for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photocondu Activity Decay by Microwave Reflectance.2007 (the entire description of which is expressly incorporated herein by reference); hereinafter referred to as the "SEMI Standard").
- the above SEMI standard describes the primary mode method and the 1/e lifetime method as methods for determining the recombination lifetime by the PCD method.
- the time constant in the range that can be regarded as exponential decay in the attenuation curve obtained by the measurement by the PCD method is defined as the first-order mode lifetime ⁇ 1 .
- the signal intensity is 1/e times (
- the recombination lifetime is calculated under the assumption that the decay of excess carrier concentration takes the form of exponential decay due to the contribution of SRH (Shockley-Read-Hall) recombination (that is, bulk recombination) only.
- the recombination lifetime (described as “effective lifetime ⁇ eff ” in Patent Document 2) has a property of the semiconductor crystal of the semiconductor sample to be evaluated.
- surface recombination lifetime ⁇ s also participates.
- the contribution of SRH recombination is relatively weakened, so that the contribution of surface recombination and the like cannot be ignored. Therefore, for example, when a PCD measurement is performed on a highly clean silicon wafer, the decay curve is distorted by the influence of surface recombination at the end of decay, resulting in non-exponential decay. For example, in such a case, the above method under the assumption that the decay of the excess carrier concentration takes the form of an exponential decay due to the contribution of SRH recombination alone cannot accurately measure the recombination lifetime. Have difficulty.
- Patent Document 1 evaluation methods that consider surface recombination are proposed in Patent Document 1, Patent Document 2, Non-Patent Document 1, and Non-Patent Document 2.
- Patent Document 2 the method proposed in Patent Document 1 requires two measurements per sample, so it is not suitable for samples whose recombination lifetime depends on the elapsed time from surface treatment. It lacks versatility because it is essential to create a database for analysis.
- the methods proposed in Patent Document 2, Non-Patent Document 1, and Non-Patent Document 2 all reduce the deviation from the exponential damping that occurs in the early stages of damping due to the influence of higher-order modes than the first-order mode. , is a method of removing the effects of surface recombination. Therefore, these methods cannot reduce or eliminate the effects of deviations from exponential decay at the end of decay.
- one aspect of the present invention provides a new evaluation method for accurately evaluating the recombination lifetime of a semiconductor sample.
- One aspect of the present invention is Obtaining an attenuation curve by subjecting the semiconductor sample to be evaluated to measurement by the photoconductive attenuation method; subjecting the attenuation curve to signal data processing using a model formula including an exponential decay term and a constant term; determining the recombination lifetime of the semiconductor sample from the exponential decay equation obtained by the signal data processing;
- a method for evaluating a semiconductor sample hereinafter also referred to as "evaluation method"
- the evaluation method includes: obtaining the exponential decay formula by canceling the constant term in the model formula by performing the signal data processing; and obtaining the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 from the exponential decay formula; can further include where ⁇ B is the SRH recombination lifetime and ⁇ S is the surface recombination lifetime.
- the signal data processing can include repeating an operation of sampling the time-series signal modeled by the model formula and taking a difference.
- the evaluation method can further include performing autoscaling for determining a sampling area for performing the sampling.
- the above autoscaling can determine a region less affected by Auger recombination and less affected by noise as a sampling region.
- the model formula can be the following formula (1′).
- xi(ti) A ⁇ exp[ ⁇ ( ⁇ B ⁇ 1 + ⁇ S ⁇ 1 )ti] ⁇ C (1′) (In formula (1′), ti: elapsed time after excitation light irradiation, xi (ti): signal intensity at elapsed time ti, ⁇ B : SRH recombination lifetime, ⁇ S : surface recombination lifetime, A, C: constant)
- One aspect of the present invention is a measurement unit that acquires an attenuation curve by subjecting a semiconductor sample to be evaluated to measurement by a photoconductive attenuation method; a processing unit that performs signal data processing on the attenuation curve using a model formula including an exponential decay term and a constant term; a recombination lifetime calculation unit that calculates the recombination lifetime of the semiconductor sample from the exponential decay formula obtained by the signal data processing;
- a semiconductor sample evaluation device hereinafter also referred to as "evaluation device"
- the processing unit includes: obtaining the exponential decay formula by canceling the constant term in the model formula by performing the signal data processing; and obtaining the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 from the exponential decay formula; can be executed.
- ⁇ B is the SRH recombination lifetime
- ⁇ S is the surface recombination lifetime.
- the signal data processing can include repeating an operation of sampling the time-series signal modeled by the model formula and taking a difference.
- the processing unit can perform autoscaling for determining the sampling area for the sampling.
- the processing unit can determine, as the sampling area, an area less affected by Auger recombination and less affected by noise by the autoscaling.
- model formula can be formula (1') described above.
- One aspect of the present invention is manufacturing a semiconductor wafer lot that includes a plurality of semiconductor wafers; extracting at least one semiconductor wafer from the semiconductor wafer lot; Evaluating the extracted semiconductor wafer by the evaluation method, and As a result of the above evaluation, preparing for shipment of semiconductor wafers of the same semiconductor wafer lot as the semiconductor wafers determined to be non-defective as product semiconductor wafers, A method of manufacturing a semiconductor wafer comprising Regarding.
- One aspect of the present invention is manufacturing semiconductor wafers for evaluation under test manufacturing conditions; Evaluating the manufactured evaluation semiconductor wafer by the semiconductor sample evaluation method; Based on the results of the evaluation, determining manufacturing conditions obtained by modifying the test manufacturing conditions as actual manufacturing conditions, or determining the test manufacturing conditions as actual manufacturing conditions; manufacturing semiconductor wafers under the actual manufacturing conditions determined above; A method of manufacturing a semiconductor wafer comprising Regarding.
- FIG. 4 is an explanatory diagram of a specific example of signal data processing;
- FIG. 4 is an explanatory diagram of a specific example of signal data processing;
- FIG. 4 is an explanatory diagram of a specific example of signal data processing;
- BRIEF DESCRIPTION OF THE DRAWINGS
- FIG. 1 is an explanatory diagram of an example of a semiconductor sample evaluation method according to an aspect of the present invention;
- FIG. 10 shows a comparison result between an example (new method) of an evaluation method of a semiconductor sample according to one embodiment of the present invention and a conventional method;
- FIG. FIG. 10 shows a comparison result between an example (new method) of an evaluation method of a semiconductor sample according to one embodiment of the present invention and a conventional method;
- FIG. 10 shows a comparison result between an example (new method) of an evaluation method of a semiconductor sample according to one embodiment of the present invention and a conventional method;
- FIG. The attenuation curve obtained by measuring an n-type silicon wafer (single crystal silicon wafer) by the ⁇ -PCD method after chemical passivation treatment as surface treatment is shown.
- a fitting curve obtained by first-order mode lifetime fitting and a fitting curve obtained by 1/e lifetime fitting of the attenuation curve shown in FIG. 8 are shown.
- a method for evaluating a semiconductor sample includes obtaining an attenuation curve by subjecting a semiconductor sample to be evaluated to measurement by a photoconductive attenuation method, and including exponential attenuation term and constant term for the attenuation curve. creating a fitting curve by fitting with a model formula; and determining the recombination lifetime of the semiconductor sample from the fitting curve.
- the object to be evaluated by the above evaluation method may be a semiconductor sample.
- semiconductor samples include various semiconductor samples such as monocrystalline silicon, polycrystalline silicon, and SiC.
- the shape and dimensions of the semiconductor sample to be evaluated are not particularly limited.
- the semiconductor specimen to be evaluated can be a wafer-shaped semiconductor specimen, ie a semiconductor wafer, such as a single crystal silicon wafer.
- the semiconductor sample to be evaluated can be in a shape other than a wafer.
- the conductivity type of the semiconductor sample to be evaluated is not particularly limited, and may be n-type or p-type.
- Photoconductive decay measurements can be made with a commercially available PCD device or a PCD device of known construction.
- a known technique can be applied to the measurement by the photoconductive decay method in the above evaluation method.
- a specific example of the photoconductive decay method is the microwave photoconductive decay ( ⁇ -PCD) method.
- the measurement by the photoconductive attenuation method in the evaluation method is not limited to the ⁇ -PCD method.
- the semiconductor sample to be evaluated is p-type silicon
- its resistivity is preferably about 1 to 100 ⁇ cm
- n-type silicon the resistivity is preferably about 0.5 to 100 ⁇ cm.
- An attenuation curve is obtained by measurement by the photoconductive attenuation method described above.
- the attenuation curve is, specifically, a curve showing the change over time of the signal intensity with respect to the elapsed time after irradiation with the excitation light.
- “Elapsed time after excitation light irradiation” is, in detail, the elapsed time from the end of excitation light irradiation.
- the signal intensity is the intensity of reflected microwaves.
- FIG. 8 shows an attenuation curve obtained by subjecting an n-type silicon wafer (single crystal silicon wafer) to chemical passivation treatment as a surface treatment and then subjecting it to measurement by the ⁇ -PCD method.
- FIG. 9 shows a fitting curve obtained by fitting the attenuation curve shown in FIG. 8 to the first mode lifetime fitting described in the SEMI standard and a fitting curve obtained by fitting the 1/e lifetime described in the SEMI standard. .
- Neither of the two fitting curves shown in FIG. 9 fit the decay curve, especially from the intermediate to late phase regions. This is because in the first-order mode method and the 1/e lifetime method, fitting is performed under the assumption that the decay of excess carrier concentration takes the form of exponential decay due to the contribution of SRH recombination alone.
- the recombination lifetime can be obtained with high accuracy by subjecting the attenuation curve to signal data processing as described in detail below.
- the signal data processing for the attenuation curve is performed using a model formula including an exponential attenuation term and a constant term.
- the present inventor believes that it is appropriate to express the decay curve when surface recombination occurs by a formula containing an exponential decay term and a constant term, preferably a formula in which the constant term is subtracted from the exponential decay term. .
- Performing signal data processing to cancel the constant term on such an expression leaves only the exponential decay term. That is, an exponential decay formula is obtained.
- the value of the recombination lifetime can be obtained as a value that includes the effects of SRH recombination and surface recombination. This makes it possible to accurately obtain the recombination lifetime of the semiconductor sample to be evaluated.
- Such signal data processing is described in more detail below.
- ⁇ B represents the SRH recombination lifetime in units of ⁇ sec, for example
- ⁇ S represents the surface recombination lifetime in units of ⁇ sec, for example.
- a and C each independently represent a constant [1/cm 3 ], preferably a positive constant.
- a and C are constants determined by ⁇ B ⁇ 1 + ⁇ S ⁇ 1 . Equation (1) above expresses that when both SRH recombination and surface recombination due to surface states contribute to the recombination lifetime, the excess carrier concentration is defined as a function of time x(t), and the excess carrier concentration is It is the preferred function under conditions greater than the equilibrium carrier concentration.
- ti is the elapsed time after excitation light irradiation
- xi (ti) is the signal intensity at the elapsed time ti
- the unit is, for example, mV
- ⁇ B is the SRH recombination lifetime
- ⁇ S is the surface recombination lifetime
- a and C are constants, for example, in mV.
- the model formula (1′) includes an exponential decay term and a constant term . ” is subtracted.
- Formula (1') is an example of the above model formula.
- the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 (the sum of the reciprocal of the surface recombination lifetime and the reciprocal of the SRH recombination lifetime) can be determined.
- the reciprocal of ⁇ B ⁇ 1 + ⁇ S ⁇ 1 obtained in this way can be adopted as the value of the recombination lifetime of the semiconductor sample to be evaluated.
- general exponential decay approximation methods such as the primary lifetime method and the 1/e lifetime method can be used.
- the signal data processing determines the sampling area in the attenuation curve obtained by the measurement by the photoconductive attenuation method, and in this sampling area, the time series signal modeled by the above model formula (more specifically, the measurement point on the attenuation curve ) and repeating the operation of sampling and diffing.
- the determination of the sampling area can be performed, for example, by autoscaling, and the following method can be given as a specific example. For example, according to the following method, a region less affected by Auger recombination and less affected by noise can be determined as a sampling region.
- a position of an arbitrary signal intensity (for example, 60% of the peak value) is set as the starting point of the sampling region, and signal data processing is performed once.
- a value that can be an index of the degree of conformity to the exponential decay such as the R2 value and the residual sum of squares, is calculated.
- the degree of suitability for exponential decay is evaluated depending on whether or not the calculated value of the index satisfies a preset threshold value.
- a preset threshold value for example, R 2 ⁇ 0.99
- the starting point of the sampling region is shifted to the lower signal intensity side and recalculation is performed.
- the recalculation can be performed once or twice or more, and when the evaluation result in the recalculation satisfies a preset threshold, the starting point in the recalculation can be determined as the starting point of the sampling area.
- the end point of the sampling region can be a position where the SN ratio (Signal-to-Noise Ratio) is equal to or less than a preset threshold.
- the SN ratio can be calculated, for example, by the following formula.
- the threshold value of the SN ratio can be, for example, 5 dB or less, and it is preferable to determine the position where the SN ratio of the signal is 0 dB, that is, the position where the noise and the signal are approximately the same as the end point.
- SNR [dB] 20log 10 [(variance of signal at arbitrary time)/(variance of noise at equilibrium)]
- N is any integer and can be, for example, 2 or greater. Also, N can be 333 or less, for example, if all the points of the signal data are 1000. That is, N can be an integer equal to or less than "T.times.1/3", where T is the number of all points of signal data.
- T is the number of all points of signal data.
- A1 ⁇ x( t1 )+x( t2 )+...+x( tN ) ⁇ /N
- B1 ⁇ x(tN +1 )+x( tN+2 )+...+x( t2N ) ⁇ /N
- Y(t 1 ) be the value obtained by subtracting B 1 from A 1 .
- Y(t 1 ) A 1 -B 1
- the average A2 of the points 2 to N+1 and the average B2 of the points N+2 to 2N+1 are calculated (see FIG. 2).
- A2 ⁇ x( t2 )+x( t3 )+...+x(tN +1 ) ⁇ /N
- B2 ⁇ x(tN +2 )+x( tN+3 )+...+x( t2N+1 ) ⁇ /N
- Y(t 2 ) be the value obtained by subtracting B 2 from A 2 .
- Y(t 2 ) A 2 -B 2
- a N+1 ⁇ x(t N+1 )+x(t N+2 )+...+ x(t 2N ) ⁇ /N
- B N+1 ⁇ x(t 2N+1 )+x(t 2N+2 )+...+x(t 3N ) ⁇ /N
- Y(t N+1 ) be the value obtained by subtracting B N+1 from A N+1 .
- Y(t N+1 ) A N+1 ⁇ B N+1
- the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 can be obtained by applying a general exponential decay approximation method to this equation (2).
- ⁇ B ⁇ 1 + ⁇ S ⁇ 1 obtained in this way can be adopted as the value of the recombination lifetime of the semiconductor sample to be evaluated.
- FIG. 4 is an explanatory diagram of an example of a semiconductor sample evaluation method according to an aspect of the present invention.
- the attenuation curve shown in the left diagram of FIG. 4 is the same as the attenuation curve shown in FIG. - Decay curve obtained by measurement by the PCD method.
- the maximum carrier injection amount of ⁇ -PCD here was about 1E17/cm 3 .
- “E17” indicates “ ⁇ 10 17 ”.
- the signal data is processed using the equation (1′) as a model formula and setting the number of sampling points to 3N as described above with reference to FIGS.
- the starting point of the sampling region was determined by the method previously described with a threshold of 'R 2 ⁇ 0.99'.
- the end point of the sampling region was the position where the SN ratio was 0 dB as described above.
- the constant term of formula (1′) was canceled, and a straight line (solid line in the right figure of FIG. 4) of the linear formula of formula (2) consisting only of the exponential decay term was obtained.
- the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 is obtained by applying the first mode method to this linear expression, and the recombination lifetime determined as the reciprocal of this time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 (Example 1 in Table 1) was the value shown in Table 1.
- Table 1 also shows the recombination lifetime obtained by applying the primary mode method described in the SEMI standard and the 1/e method described in the SEMI standard to the decay curve shown in the left diagram of FIG. shown in
- Equation (1) is a function of time close to the measured attenuation.
- fitting was performed as follows. Using the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 obtained in the above example, equation (1) is in the form of a linear equation for exp[ ⁇ ( ⁇ B ⁇ 1 + ⁇ S ⁇ 1 )t] become. That is, in the sampling region determined by autoscaling, the attenuation curve can be linearly approximated to exp[-( ⁇ B ⁇ 1 + ⁇ S ⁇ 1 )t] as shown in the left diagram of FIG. Constants A and C can be obtained as intercepts.
- FIG. 6 and 7 show comparison results between an example (new method) and a conventional method of evaluating a semiconductor sample according to an aspect of the present invention.
- the left figure in FIG. 6 shows the recombination lifetime obtained by the same method as in Example 1 for a plurality of n-type silicon wafers for which a recombination lifetime value of about 7000 ⁇ sec can be obtained by the same method as in Example 1 above.
- the right figure in FIG. 6 shows the CV values (standard deviation/arithmetic mean ⁇ 100, unit: %) of the measurement results shown in the left figure in FIG. From the results shown in FIG. 6, it can be confirmed that the variation in the recombination lifetime value is suppressed in the new method as compared with the conventional method.
- FIG. 7 shows attenuation curves obtained by measurement by the ⁇ -PCD method for sample circle 1, which has the largest difference in the positive direction, and sample circle 2, which has the largest difference in the negative direction, in the conventional method shown in FIG.
- a fitting curve obtained by fitting using equation (1) as described above and a fitting curve obtained by fitting by a conventional first-order mode method are shown.
- FIG. 7 also shows recombination lifetime values of each sample obtained by the new method and the conventional method. Also from the results shown in FIG. 7, it can be confirmed that the function of Equation (1) is a function of time close to the measured attenuation.
- One aspect of the present invention is a measurement unit that acquires an attenuation curve by subjecting a semiconductor sample to be evaluated to measurement by a photoconductive attenuation method; a processing unit that performs signal data processing on the attenuation curve using a model formula including an exponential decay term and a constant term; a recombination lifetime calculation unit that calculates the recombination lifetime of the semiconductor sample from the exponential decay formula obtained by the signal data processing;
- a semiconductor sample evaluation device comprising: Regarding.
- the above evaluation apparatus can be used to implement the semiconductor sample evaluation method according to one aspect of the present invention.
- the model formula can be, for example, formula (1') described above.
- the processing unit of the evaluation apparatus performs signal data processing to cancel the constant term in the model formula to obtain the exponential decay formula. Then, the time constant ⁇ B ⁇ 1 + ⁇ S ⁇ 1 can be obtained from the above exponential decay formula.
- the processing unit can be configured using a known analysis program. Also, the recombination lifetime calculator can be configured using a known analysis program.
- the signal data processing can include repeating an operation of sampling the time-series signal modeled by the model formula and taking a difference.
- the processing unit can perform autoscaling for determining the sampling area for the sampling.
- the processing unit can determine, as a sampling region, a region less affected by recombination and less affected by noise by the autoscaling. Such autoscaling is as described above.
- the evaluation device may further include the processing unit and/or the calculation unit in a PCD measurement device having a measurement unit that performs measurement by the PCD method.
- one or more computers other than the PCD measurement device having the measurement unit that performs measurement by the PCD method include the processing unit and/or the calculation unit, and the computer and the PCD measurement device Various types of information such as measurement results, processing results, calculation results, etc. can be transmitted and received between the computers, or further between a plurality of computers, by wired or wireless communication.
- One computer may include the processing section and the calculating section, or different computers may include the processing section and the calculating section, respectively.
- One aspect of the present invention is manufacturing a semiconductor wafer lot that includes a plurality of semiconductor wafers; extracting at least one semiconductor wafer from the semiconductor wafer lot; Evaluating the extracted semiconductor wafer by the evaluation method, and As a result of the above evaluation, preparing for shipment of semiconductor wafers of the same semiconductor wafer lot as the semiconductor wafers determined to be non-defective as product semiconductor wafers, A method for manufacturing a semiconductor wafer including (hereinafter also referred to as "manufacturing method 1"), Regarding.
- one aspect of the present invention is manufacturing semiconductor wafers for evaluation under test manufacturing conditions; Evaluating the manufactured evaluation semiconductor wafer by the semiconductor sample evaluation method; Based on the results of the evaluation, determining manufacturing conditions obtained by modifying the test manufacturing conditions as actual manufacturing conditions, or determining the test manufacturing conditions as actual manufacturing conditions; manufacturing semiconductor wafers under the actual manufacturing conditions determined above; A method for manufacturing a semiconductor wafer (hereinafter also referred to as "manufacturing method 2"), Regarding.
- manufacturing method 1 the semiconductor wafers of the same lot as the semiconductor wafers determined to be non-defective as a result of the so-called sampling inspection are prepared for shipment as product semiconductor wafers.
- manufacturing method 2 semiconductor wafers manufactured under test manufacturing conditions are evaluated, and actual manufacturing conditions are determined based on the evaluation results.
- the semiconductor wafer is evaluated by the evaluation method according to one aspect of the present invention described above.
- a polished wafer can be mentioned as an example of a silicon wafer, which is one form of a semiconductor wafer.
- Polished wafers are obtained by cutting (slicing) silicon wafers from silicon single crystal ingots grown by the Czochralski method (CZ method), chamfering, rough polishing (for example, lapping), etching, and mirror polishing (finish polishing). , by a manufacturing process that includes cleaning between or after the above processing steps.
- the annealed wafer can be manufactured by subjecting the polished wafer manufactured as described above to a heat treatment, more specifically, an annealing treatment.
- An epitaxial wafer can be produced by vapor-phase growth (epitaxial growth) of an epitaxial layer on the surface of the polished wafer produced as described above.
- the total number of semiconductor wafers included in a semiconductor wafer lot is not particularly limited.
- the number of semiconductor wafers extracted from a manufactured semiconductor wafer lot and subjected to so-called sampling inspection is at least one, and may be two or more, and the number is not particularly limited.
- a semiconductor wafer extracted from a semiconductor wafer lot is evaluated by an evaluation method according to one aspect of the present invention.
- the recombination lifetime value obtained by such evaluation as an index it is possible to determine the quality of the evaluated semiconductor wafer. For example, the higher the amount of metal contamination, the shorter the recombination lifetime measured by the PCD method. Therefore, the presence or absence of metal contamination and/or the degree of metal contamination of the semiconductor wafer can be evaluated based on the value of the recombination lifetime measured by the PCD method. Therefore, for example, the fact that the value of the recombination lifetime is equal to or greater than a predetermined threshold or exceeds the threshold can be used as a criterion for determining a non-defective product. Such a threshold may be set according to the quality required for product wafers.
- the semiconductor wafers of the same semiconductor wafer lot as the semiconductor wafers determined to be non-defective can be prepared for shipment as product semiconductor wafers (for example, packing).
- test manufacturing conditions and actual manufacturing conditions include various conditions in various processes for manufacturing semiconductor wafers. Various steps for manufacturing the semiconductor wafer are as described for manufacturing method 1 above.
- actual manufacturing conditions shall mean the manufacturing conditions of product semiconductor wafers.
- test manufacturing conditions are set as a preliminary step for determining actual manufacturing conditions, and semiconductor wafers for evaluation are manufactured under these test manufacturing conditions.
- the manufactured semiconductor wafer is evaluated by the evaluation method according to one aspect of the present invention.
- the recombination lifetime value obtained by such evaluation as an index whether the test manufacturing conditions are conditions that can be adopted as the actual manufacturing conditions, or the manufacturing conditions that are modified from the test manufacturing conditions are adopted as the actual manufacturing conditions. should be determined.
- the test production conditions are adopted as the actual production conditions when the obtained recombination lifetime value is equal to or greater than a predetermined threshold value. It can be used as a criterion for determining whether or not it is a condition to obtain.
- manufacturing conditions to be changed include, for example, manufacturing conditions that may cause metal contamination.
- modification of the heat treatment furnace used eg, replacement of parts, cleaning of parts, cleaning of the inside of the furnace, etc.).
- manufacturing method 1 and the manufacturing method 2 For other details of the manufacturing method 1 and the manufacturing method 2, a known technology related to the manufacturing method of semiconductor wafers can be applied. According to manufacturing method 1 and manufacturing method 2, for example, product semiconductor wafers with less metal contamination can be stably supplied to the market.
- One aspect of the present invention is useful in the technical field of various semiconductor wafers.
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Abstract
Description
特許文献2:特開昭58-181549号公報(その全記載は、ここに特に開示として援用される)
非特許文献1:宇佐美 晶、曽根 福保、村井 耕治、佐野 賢二、レーザー研究 1984年 12巻 10号 p. 585-594(その全記載は、ここに特に開示として援用される)
非特許文献2:宇佐美 晶、神立 信一、工藤 勃士、応用物理、1980年 49巻 12号 p.1192-1197(その全記載は、ここに特に開示として援用される)
評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得すること、
上記減衰曲線に対して指数減衰項と定数項とを含むモデル式による信号データ処理を施すこと、および、
上記信号データ処理によって得られた指数減衰の式から上記半導体試料の再結合ライフタイムを求めること、
を含む、半導体試料の評価方法(以下、「評価方法」とも記載する。)、
に関する。
上記信号データ処理を行うことによって上記モデル式における定数項を打ち消して上記指数減衰の式を取得すること、および
上記指数減衰の式から時定数τB -1+τS -1を求めること、
を更に含むことができる。ここで、τBは、SRH再結合ライフタイムであり、τSは、表面再結合ライフタイムである。
xi(ti)=A×exp[-(τB -1+τS -1)ti]-C ・・・(1’)
(式(1’)中、ti:励起光照射後の経過時間、xi(ti):経過時間tiにおける信号強度、τB:SRH再結合ライフタイム、τS: 表面再結合ライフタイム、A、C:定数)
評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得する測定部と、
上記減衰曲線に対して指数減衰項と定数項とを含むモデル式による信号データ処理を施す処理部と、
上記信号データ処理によって得られた指数減衰の式から上記半導体試料の再結合ライフタイムを求める再結合ライフタイム算出部と、
を含む、半導体試料の評価装置(以下、「評価装置」とも記載する。)、
に関する。
上記信号データ処理を行うことによって上記モデル式における定数項を打ち消して上記指数減衰の式を取得すること、および
上記指数減衰の式から時定数τB -1+τS -1を求めること、
を実行することができる。ここで、τBは、SRH再結合ライフタイムであり、τSは、表面再結合ライフタイムである。
複数の半導体ウェーハを含む半導体ウェーハロットを製造すること、
上記半導体ウェーハロットから少なくとも1つの半導体ウェーハを抽出すること、
上記抽出された半導体ウェーハを上記評価方法によって評価すること、および、
上記評価の結果、良品と判定された半導体ウェーハと同じ半導体ウェーハロットの半導体ウェーハを製品半導体ウェーハとして出荷するための準備に付すこと、
を含む半導体ウェーハの製造方法、
に関する。
テスト製造条件下で評価用半導体ウェーハを製造すること、
上記製造された評価用半導体ウェーハを上記半導体試料の評価方法によって評価すること、
上記評価の結果に基づき、上記テスト製造条件に変更を加えた製造条件を実製造条件として決定するか、または上記テスト製造条件を実製造条件として決定すること、および、
上記決定された実製造条件下で半導体ウェーハを製造すること、
を含む半導体ウェーハの製造方法、
に関する。
本発明の一態様にかかる半導体試料の評価方法は、評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得すること、上記減衰曲線を指数減衰項と定数項とを含むモデル式によってフィッティングすることによりフィッティングカーブを作成すること、および、上記フィッティングカーブから上記半導体試料の再結合ライフタイムを求めること、を含む。
以下、上記評価方法について、更に詳細に説明する。
上記評価方法の評価対象は半導体試料であればよい。半導体試料としては、例えば、単結晶シリコン、多結晶シリコン、SiC等の各種半導体試料を挙げることができる。評価対象の半導体試料の形状および寸法は特に限定されない。一例として、評価対象の半導体試料は、ウェーハ形状の半導体試料、即ち半導体ウェーハ、例えば単結晶シリコンウェーハであることができる。ただし、評価対象の半導体試料は、ウェーハ以外の形状であることもできる。また、評価対象の半導体試料の導電型も特に限定されず、n型であってもp型であってもよい。
光導電減衰法による測定は、市販のPCD装置または公知の構成のPCD装置によって行うことができる。上記評価方法における光導電減衰法による測定については、公知技術を適用できる。光導電減衰法の具体例としては、マイクロ波光導電減衰(μ-PCD)法を挙げることができる。ただし、上記評価方法における光導電減衰法による測定は、μ-PCD法によるものに限定されるものではない。例えば、一般的なμ-PCD装置の最大キャリア注入量を考慮すると、評価対象の半導体試料がp型シリコンである場合、その抵抗率は1~100Ωcm程度であることが好適であり、n型シリコンである場合、抵抗率は0.5~100Ωcm程度であることが好適である。
これに対し、上記評価方法では、以下に詳述するように減衰曲線に対して信号データ処理を施すことにより、再結合ライフタイムを精度よく求めることが可能になる。
上記評価方法では、減衰曲線に対する信号データ処理を、指数減衰項と定数項とを含むモデル式を用いて行う。本発明者は、表面再結合が起こる場合の減衰曲線は、指数減衰項と定数項とを含む式、好ましくは指数減衰項から定数項が差し引かれた式、で表すことが適切と考えている。かかる式に対して定数項を打ち消す信号データ処理を行うことで指数減衰項のみが残る。即ち、指数減衰の式が得られる。この指数減衰の式を用いることにより、SRH再結合および表面再結合の影響を含む値として再結合ライフタイムの値を求めることができる。これにより、評価対象の半導体試料の再結合ライフタイムを精度よく求めることが可能になる。以下に、かかる信号データ処理について、更に詳細に説明する。
x(t)=A×exp[-(τB -1+τS -1)t]-C ・・・(1)
xi(ti)=A×exp[-(τB -1+τS -1)ti]-C ・・・(1’)
上記算出値が予め設定した閾値(一例として、R2≧0.99)を満足する場合には、上記で設定したサンプリング領域の開始点を、信号データ処理を実行する際のサンプリング領域の開始点として決定することができる。
上記算出値が予め設定した閾値(一例として、R2≧0.99)を満足しない場合には、サンプリング領域の開始点を、信号強度が低い側へシフトさせて再計算を実行する。再計算は、1回または2回以上実行することができ、再計算での評価結果が予め設定した閾値を満足した場合、その再計算における開始点を、サンプリング領域の開始点として決定することができる。
サンプリング領域の終了点は、SN比(Signal-to-Noise Ratio)が予め設定した閾値以下にある位置とすることができる。SN比は、例えば以下の式によって算出できる。上記のSN比の閾値は、例えば5dB以下であることができ、信号のSN比が0dBである位置、即ちノイズと信号が同程度の位置、を終了点として決定することが好ましい。
SN比[dB]=20log10[(任意時間における信号の分散)/(平衡状態におけるノイズの分散)]
まず、開始点(1点目)を基準として、1点目~N点目の平均A1とN+1点目~2N点目の平均B1とを算出する(図1参照)。
A1={x(t1)+ x(t2)+…+ x(tN)}/N
B1={x(tN+1)+ x(tN+2)+…+ x(t2N)}/N
A1からB1を差し引いた値をY(t1)とする。
Y(t1)=A1-B1
次に2点目を基準として、2点目~N+1点目の平均A2とN+2点目~2N+1点目の平均B2とを算出する(図2参照)。
A2={x(t2)+ x(t3)+…+ x(tN+1)}/N
B2={x(tN+2)+ x(tN+3)+…+ x(t2N+1)}/N
A2からB2を差し引いた値をY(t2)とする。
Y(t2)=A2-B2
同様の計算を続け、最終的にN+1点目~2N点目の平均AN+1と2N+1点目~3N点目の平均BN+1とを算出する(図3参照)。
AN+1={x(tN+1)+ x(tN+2)+…+ x(t2N)}/N
BN+1={x(t2N+1)+ x(t2N+2)+…+ x(t3N)}/N
AN+1からBN+1を差し引いた値をY(tN+1)とする。
Y(tN+1)=AN+1-BN+1
上記計算を続けて得られた時系列信号データ列は、式(1’)における定数項が打ち消され、以下の指数減衰の式(2)となる。この式(2)に対して一般的な指数減衰近似法を適用することにより、時定数τB -1+τS -1を求めることができる。こうして求められた「τB -1+τS -1」を、評価対象の半導体試料の再結合ライフタイムの値として採用することができる。上記指数減衰近似法としては、例えば、1次モード法、1/eライフタイム法等を挙げることができる。
Y(t)=A’×exp[-(τB -1+τS -1)t]・・・(2)
(A’:任意定数)
図4は、本発明の一態様にかかる半導体試料の評価方法の一例の説明図である。
図4左図に示す減衰曲線は、図8に示す減衰曲線と同じであって、n型シリコンウェーハ(単結晶シリコンウェーハ、抵抗率:10Ωcm)を、表面処理としてケミカルパッシベーション処理を行った後にμ-PCD法による測定に付して得られた減衰曲線である。ここでのμ-PCDの最大キャリア注入量は約1E17/cm3であった。なお、「E17」は、「×1017」を示す。
図4左図に示す減衰曲線に対して、モデル式として式(1’)を使用し、図1~図3を参照して先に説明したように、サンプリング点数を3N点として、信号データ処理を行った。サンプリング領域の開始点は、閾値を「R2≧0.99」として先に記載した方法によって決定した。サンプリング領域の終了点は、先に記載したようにSN比が0dBである位置とした。
上記信号データ処理を行うことによって式(1’)の定数項が打ち消され、指数減衰項のみからなる式(2)の一次式の直線(図4右図中の実線)が得られた。この一次式に対して、1次モード法を適用することによって時定数τB -1+τS -1を求め、この時定数τB -1+τS -1の逆数として求められた再結合ライフタイム(表1中、実施例1)は、表1に示す値であった。
図4左図に示す減衰曲線に対して、SEMI規格に記載の1次モード法およびSEMI規格に記載の1/e法をそれぞれ適用して求められた再結合ライフタイムも併せて表1に示す。
まず、式(1)における残りの未定パラメータ定数A、Cを決めるために、以下の通りフィッティングを行った。
上記の実施例で求められた時定数τB -1+τS -1を用いると、式(1)はexp[-(τB -1+τS -1)t]に対して直線の式の形になる。即ち、オートスケーリングで決めたサンプリング領域において、減衰曲線は、図5左図のようにexp[-(τB -1+τS -1)t]に対して直線近似することができ、その傾きおよび切片として定数AおよびCを得ることができる。
このように求められた時定数τB -1+τS -1および定数A、Cを用いて式(1)を適用すると、図5右図のように、1次モード法または1/eライフタイム法によってフィッティングした場合(図5右図中、1次モードライフタイムフィッティング、1/eライフタイムフィッティング)と比較して、減衰曲線の広い範囲で適合したフィッティングカーブ(図5右図中、新手法フィッティング)が得られた。
以上の結果から、式(1)の関数が、実測の減衰に近い時間の関数であることが確認できる。
図6左図に、上記の実施例1と同様の手法によって7000μsec程度の再結合ライフタイム値が得られる複数のn型シリコンウェーハについて、実施例1と同様の手法によって求められた再結合ライフタイム値(図6中、新手法)と、従来手法である1次モード法によって得られた再結合ライフタイム値(図6中、「従来手法」)とを示す。図6右図は、図6左図に示されている測定結果のCV値(標準偏差/算術平均×100、単位:%)を示す。図6に示す結果から、新手法において、従来手法と比べて、再結合ライフタイム値のばらつきが抑制されていることが確認できる。
本発明の一態様は、
評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得する測定部と、
上記減衰曲線に対して指数減衰項と定数項とを含むモデル式による信号データ処理を施す処理部と、
上記信号データ処理によって得られた指数減衰の式から上記半導体試料の再結合ライフタイムを求める再結合ライフタイム算出部と、
を含む、半導体試料の評価装置、
に関する。
本発明の一態様は、
複数の半導体ウェーハを含む半導体ウェーハロットを製造すること、
上記半導体ウェーハロットから少なくとも1つの半導体ウェーハを抽出すること、
上記抽出された半導体ウェーハを上記評価方法によって評価すること、および、
上記評価の結果、良品と判定された半導体ウェーハと同じ半導体ウェーハロットの半導体ウェーハを製品半導体ウェーハとして出荷するための準備に付すこと、
を含む半導体ウェーハの製造方法(以下、「製造方法1」とも記載する。)、
に関する。
テスト製造条件下で評価用半導体ウェーハを製造すること、
上記製造された評価用半導体ウェーハを上記半導体試料の評価方法によって評価すること、
上記評価の結果に基づき、上記テスト製造条件に変更を加えた製造条件を実製造条件として決定するか、または上記テスト製造条件を実製造条件として決定すること、および、
上記決定された実製造条件下で半導体ウェーハを製造すること、
を含む半導体ウェーハの製造方法(以下、「製造方法2」とも記載する。)、
に関する。
Claims (14)
- 評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得すること、
前記減衰曲線に対して指数減衰項と定数項とを含むモデル式による信号データ処理を施すこと、および、
前記信号データ処理によって得られた指数減衰の式から前記半導体試料の再結合ライフタイムを求めること、
を含む、半導体試料の評価方法。 - 前記信号データ処理を行うことによって前記モデル式における定数項を打ち消して前記指数減衰の式を取得すること、および
前記指数減衰の式から時定数τB -1+τS -1を求めること、
を更に含み、τBは、SRH再結合ライフタイムであり、τSは、表面再結合ライフタイムである、請求項1に記載の半導体試料の評価方法。 - 前記信号データ処理は、前記モデル式によってモデル化される時系列信号をサンプリングして差分を取る操作を繰り返すことを含む、請求項2に記載の半導体試料の評価方法。
- 前記サンプリングを行うサンプリング領域を決定するためのオートスケーリングを実行することを更に含む、請求項3に記載の半導体試料の評価方法。
- 前記オートスケーリングによって、オージェ再結合の影響が少なく、かつノイズの影響が少ない領域を、サンプリング領域として決定する、請求項4に記載の半導体試料の評価方法。
- 前記モデル式は、下記式(1’):
xi(ti)=A×exp[-(τB -1+τS -1)ti]-C ・・・(1’)
(式(1’)中、ti:励起光照射後の経過時間、xi(ti):経過時間tiにおける信号強度、τB:SRH再結合ライフタイム、τS:表面再結合ライフタイム、A、C:定数)
である、請求項1~5のいずれか1項に記載の半導体試料の評価方法。 - 評価対象の半導体試料を光導電減衰法による測定に付すことによって減衰曲線を取得する測定部と、
前記減衰曲線に対して指数減衰項と定数項とを含むモデル式による信号データ処理を施す処理部と、
前記信号データ処理によって得られた指数減衰の式から前記半導体試料の再結合ライフタイムを求める再結合ライフタイム算出部と、
を含む、半導体試料の評価装置。 - 前記処理部は、
信号データ処理を行うことによって前記モデル式における定数項を打ち消して前記指数減衰の式を取得すること、および
前記指数減衰の式から時定数τB -1+τS -1を求めること、
を実行し、τBは、SRH再結合ライフタイムであり、τSは、表面再結合ライフタイムである、請求項7に記載の半導体試料の評価装置。 - 前記信号データ処理は、前記モデル式によってモデル化される時系列信号をサンプリングして差分を取る操作を繰り返すことを含む、請求項8に記載の半導体試料の評価装置。
- 前記処理部は、前記サンプリングを行うサンプリング領域を決定するためのオートスケーリングを実行する、請求項9に記載の半導体試料の評価装置。
- 前記処理部は、前記オートスケーリングによって、再結合の影響が少なく、かつノイズの影響が少ない領域を、サンプリング領域として決定する、請求項10に記載の半導体試料の評価装置。
- 前記モデル式は、下記式(1’):
xi(ti)=A×exp[-(τB -1+τS -1)ti]-C ・・・(1’)
(式(1’)中、ti:励起光照射後の経過時間、xi(ti):経過時間tiにおける信号強度、τB:SRH再結合ライフタイム、τS:表面再結合ライフタイム、A、C:定数)
である、請求項7~11のいずれか1項に記載の半導体試料の評価装置。 - 複数の半導体ウェーハを含む半導体ウェーハロットを製造すること、
前記半導体ウェーハロットから少なくとも1つの半導体ウェーハを抽出すること、
前記抽出された半導体ウェーハを請求項1~6のいずれか1項に記載の評価方法によって評価すること、および、
前記評価の結果、良品と判定された半導体ウェーハと同じ半導体ウェーハロットの半導体ウェーハを製品半導体ウェーハとして出荷するための準備に付すこと、
を含む半導体ウェーハの製造方法。 - テスト製造条件下で評価用半導体ウェーハを製造すること、
前記製造された評価用半導体ウェーハを請求項1~6のいずれか1項に記載の半導体試料の評価方法によって評価すること、
前記評価の結果に基づき、前記テスト製造条件に変更を加えた製造条件を実製造条件として決定するか、または前記テスト製造条件を実製造条件として決定すること、および、
前記決定された実製造条件下で半導体ウェーハを製造すること、
を含む半導体ウェーハの製造方法。
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