WO2023082913A1 - 一种多坩埚碳化硅晶体同步生长方法及设备 - Google Patents

一种多坩埚碳化硅晶体同步生长方法及设备 Download PDF

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WO2023082913A1
WO2023082913A1 PCT/CN2022/124446 CN2022124446W WO2023082913A1 WO 2023082913 A1 WO2023082913 A1 WO 2023082913A1 CN 2022124446 W CN2022124446 W CN 2022124446W WO 2023082913 A1 WO2023082913 A1 WO 2023082913A1
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graphite crucible
crucible
silicon carbide
growth
heater
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PCT/CN2022/124446
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English (en)
French (fr)
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陈建明
周元辉
杨洪雨
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苏州优晶光电科技有限公司
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Priority to KR1020227046131A priority Critical patent/KR20230071771A/ko
Priority to EP22834836.3A priority patent/EP4206367A4/en
Priority to JP2022580948A priority patent/JP2023552024A/ja
Priority to US18/156,885 priority patent/US20230151511A1/en
Publication of WO2023082913A1 publication Critical patent/WO2023082913A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the application relates to a multi-crucible silicon carbide crystal synchronous growth method and equipment, belonging to the technical field of silicon carbide crystals.
  • Silicon carbide crystal is a third-generation wide-bandgap semiconductor material with excellent performance. It has the characteristics of wide bandgap, high carrier saturation concentration, high critical breakdown electric field, high thermal conductivity, and high chemical stability. It is ideal for preparing high-frequency, The best material for integrated electronic devices such as high power, high density, high temperature, and radiation resistance. However, due to the harsh growth conditions and slow growth rate of silicon carbide crystals, the growth cost of silicon carbide crystals is very high, so silicon carbide crystals can only be used in High value-added electronic components.
  • the industrial growth of silicon carbide crystals mainly adopts the physical vapor transport (PVT) method, that is, the gas generated by the sublimation and decomposition of the silicon carbide raw material contained in the graphite crucible is transported to the seed crystal for recrystallization by heating above 2100 ° C, and a relatively large area is obtained.
  • PVT physical vapor transport
  • SiC silicon carbide
  • the PVT method of induction heating is generally used in the industry to grow silicon carbide crystals.
  • the induction coil causes the graphite crucible to generate eddy currents to generate heat directly.
  • the radial gradient of temperature is large, which leads to excessive internal stress and cracking of the crystal, especially when growing large-sized crystals, the yield rate of the crystal growth process is low;
  • the traditional PVT growth device is to install a crucible in a cavity , only one silicon carbide crystal can be grown within a certain period of time, but due to the characteristics of high growth temperature, slow growth speed, and expensive equipment, the growth cost of silicon carbide crystal is much higher than that of silicon single crystal.
  • the scope of application of silicon carbide crystals is largely limited.
  • one of the purposes of the present application is to provide a multi-crucible silicon carbide crystal synchronous growth method and equipment, so as to solve the problems raised in the above-mentioned background technology.
  • a multi-crucible silicon carbide crystal synchronous growth equipment including a cavity, and an insulation layer assembly arranged close to the inner wall of the cavity: several heater assemblies are arranged at intervals inside the insulation layer assembly, and several independent Each growth chamber is provided with an independent growth assembly; the independent growth assembly includes a graphite crucible and a seed crystal tray arranged on the top of the graphite crucible; this arrangement ensures that the cavity is completely covered by the insulation layer, The internal spaces of multiple heater assemblies arranged at intervals inside the insulation layer can form multiple growth chambers, and the multiple growth chambers do not interfere with each other, so that the simultaneous growth of silicon carbide crystals can be realized, and the growth efficiency of silicon carbide crystals can be improved.
  • the horizontal cross-section of the growth cavity is circular.
  • the horizontal cross-sectional shape of the growth cavity is a symmetrical polygon with a number of sides ⁇ 4.
  • a driving assembly is connected to the bottom of the graphite crucible, and the driving assembly is used to drive the graphite crucible to move in the growth chamber.
  • the drive assembly includes a lifting mechanism and a rotating mechanism;
  • the lifting mechanism includes a hollow lifting rod slidably connected to the bottom of the graphite crucible, a lifting motor fixed at the bottom of the cavity and connected to the bottom end of the hollow lifting rod;
  • the rotating mechanism includes a stepping motor fixed in the hollow elevating rod, a rotating rod coaxially fixedly connected with the output shaft of the stepping motor, and the rotating rod is fixedly connected with the bottom of the graphite crucible; the rotating mechanism is arranged inside the elevating mechanism but both Their respective functions do not interfere with each other. On the one hand, it ensures the accuracy of the adjustment of the position of the graphite crucible by the drive components. On the other hand, it is relatively simple and convenient to adjust the height and angle of the graphite crucible independently.
  • the hollow lifting rod runs through the bottom of the cavity.
  • annular chute is provided at the bottom of the graphite crucible, and a sliding roller matching the annular chute is installed at the top of the hollow lifting rod.
  • the heater assembly includes a first heater and a second heater wound around the periphery of the graphite crucible, and a third heater fixed at the bottom of the graphite crucible.
  • the first heater and the second heater are all wound around the periphery of the graphite crucible, and the first heater is arranged between the upper edge of the graphite crucible and the height of 1/4M of the graphite crucible.
  • the second heater is set between the height of 3/4M of the graphite crucible and the lower edge of the graphite crucible, and the height of the second heater does not exceed the height of the silicon carbide raw material.
  • a multi-crucible silicon carbide crystal synchronous growth method using the above-mentioned growth equipment for synchronous growth of silicon carbide crystals, comprising the following steps:
  • a multi-crucible silicon carbide crystal synchronous growth equipment including a cavity, and an insulation layer assembly arranged close to the inner wall of the cavity: the insulation layer assembly divides the cavity into several independent growth cavities, and each growth cavity is equipped with an independent growth assembly; the independent growth assembly includes a graphite crucible, a seed tray arranged on the top of the graphite crucible, and a heater assembly arranged on the periphery of the graphite crucible;
  • the cavity is divided into multiple growth cavities, and the multiple growth cavities do not interfere with each other, which can realize the synchronous growth of silicon carbide crystals and improve the growth efficiency of silicon carbide crystals.
  • the horizontal cross-section of the growth cavity is circular.
  • the horizontal cross-sectional shape of the growth cavity is a symmetrical polygon with a number of sides ⁇ 4.
  • a driving assembly is connected to the bottom of the graphite crucible, and the driving assembly is used to drive the graphite crucible to move in the growth chamber.
  • the drive assembly includes a lifting mechanism and a rotating mechanism;
  • the lifting mechanism includes a hollow lifting rod slidably connected to the bottom of the graphite crucible, a lifting motor fixed at the bottom of the cavity and connected to the bottom end of the hollow lifting rod;
  • the rotating mechanism includes a stepping motor fixed in the hollow elevating rod, a rotating rod coaxially fixedly connected with the output shaft of the stepping motor, and the rotating rod is fixedly connected with the bottom of the graphite crucible; the rotating mechanism is arranged inside the elevating mechanism but both Their respective functions do not interfere with each other. On the one hand, it ensures the accuracy of the adjustment of the position of the graphite crucible by the drive components. On the other hand, it is relatively simple and convenient to adjust the height and angle of the graphite crucible independently.
  • the hollow lifting rod runs through the bottom of the cavity.
  • annular chute is provided at the bottom of the graphite crucible, and a sliding roller matching the annular chute is installed at the top of the hollow lifting rod.
  • the heater assembly includes a first heater and a second heater wound around the periphery of the graphite crucible, and a third heater fixed at the bottom of the graphite crucible.
  • the first heater and the second heater are all wound around the periphery of the graphite crucible, and the first heater is arranged between the upper edge of the graphite crucible and the height of 1/4M of the graphite crucible.
  • the second heater is set between the height of 3/4M of the graphite crucible and the lower edge of the graphite crucible, and the height of the second heater does not exceed the height of the silicon carbide raw material.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth equipment, which uses multi-stage independently controlled graphite heaters to generate heat, replacing the traditional induction heating method, and can more accurately adjust the radial and longitudinal temperature gradients of the crucibles , can not only accelerate the growth rate of the crystal, but also reduce the internal stress of the crystal.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth equipment, wherein each crucible is located in an independent space, creating a crystal growth environment similar to traditional single-crucible equipment, and avoiding the mutual interference of different crystals during the growth process , to ensure that the crystal quality is not lower than the level of single crucible growth.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth equipment, in which each crucible has an independent lifting and rotating mechanism, which can more accurately adjust the radial and longitudinal temperature gradients for each crucible, and also Different crucibles can be adjusted to different temperature gradients to speed up the research and development of crystal growth processes and reduce research and development costs.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth equipment, wherein the heater assembly includes a first heater, a second heater and a third heater which are independently arranged without interfering with each other, and the second heater and the third heater
  • the three heaters are used to adjust the temperature of the silicon carbide raw material, especially the second heater, while ensuring that the temperature of the silicon carbide raw material can be adjusted, while trying to avoid affecting the silicon carbide seed crystal in the seed crystal tray, so as to realize the silicon carbide raw material and SiC seeds were used for the purpose of temperature control.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth method, wherein different crucibles can grow silicon carbide crystals with different diameters, and 4-inch, 6-inch and 8-inch crystals can be grown simultaneously in one device. Meet the needs of production tasks.
  • This application relates to a multi-crucible silicon carbide crystal synchronous growth method, in which multiple crucibles are grown synchronously, and multiple crystals can be grown in one furnace, which greatly increases the production capacity of a single furnace and reduces the energy, equipment and personnel costs per unit product. Narrowing the cost gap with monocrystalline silicon can not only greatly reduce the growth cost of silicon carbide crystals, but also ensure the internal quality of a single crystal ingot, and expand the application field of silicon carbide crystals.
  • Fig. 1 is a top view structural schematic diagram of the multi-crucible silicon carbide crystal synchronous growth equipment of the present application
  • Fig. 2 is a schematic diagram of the main structure of the multi-crucible silicon carbide crystal synchronous growth equipment of the present application;
  • Fig. 3 is the enlarged schematic diagram of place A in Fig. 2 of the present application.
  • Fig. 4 is a top view structural schematic diagram of another multi-crucible silicon carbide crystal synchronous growth device of the present application.
  • Fig. 5 is a front view schematic diagram of another multi-crucible silicon carbide crystal synchronous growth device of the present application.
  • a multi-crucible silicon carbide crystal synchronous growth equipment includes a cavity 1 and an insulation layer assembly arranged close to the inner wall of the cavity 1.
  • the first thermal insulation layer 16, the second thermal insulation layer 17 and the third thermal insulation layer 18 of the inner wall several heater assemblies are arranged at intervals inside the thermal insulation layer assembly, and several independent growth chambers 2 are formed in the internal space of the heater assembly, Each growth chamber is provided with an independent growth assembly;
  • the independent growth assembly includes a graphite crucible 3, a seed tray 4 arranged on the top of the graphite crucible 3, a drive assembly arranged at the bottom of the graphite crucible 3, and the heater assembly includes a winding
  • the first heater 13 and the second heater 14 on the graphite crucible 3 periphery and the third heater 15 fixed on the bottom of the graphite crucible 3 define the height of the graphite crucible 3 as M, and the height of the silicon carbide raw material is contained in the present embodiment.
  • the first heater 13 and the second heater 14 are all wound around the periphery of the graphite crucible 3, and the first heater 13 is arranged on the graphite crucible 3 upper edge to the graphite crucible 3
  • the second heater 14 is arranged between the height of 1/2M of the graphite crucible 3 and the lower edge of the graphite crucible 3, so as to ensure that the height of the upper edge of the second heater 14 does not exceed the height of the silicon carbide raw material.
  • a first electrode 19 is fixed on each first heater 13, a second electrode 20 is fixed on each second heater 14, and a third electrode 21 is fixed on each third heater 15.
  • the electrodes 19, the second electrodes 20 and the third electrodes 21 all extend to the outside of the cavity 1 and are electrically connected to the controller.
  • the first electrodes 19 are embedded between the first insulation layer 16 and the second insulation layer 17,
  • the second electrode 20 is embedded between the second insulation layer 17 and the third insulation layer 18
  • the third electrode 21 penetrates through the third insulation layer 18 .
  • the horizontal section shape of the growth chamber 2 in this embodiment is circular.
  • a drive assembly is connected to the bottom of the graphite crucible 3 , and the drive assembly is used to drive the graphite crucible 3 to move in the growth chamber 2 .
  • the drive assembly includes a lifting mechanism 5 and a rotating mechanism 6;
  • the lifting mechanism 5 includes a hollow lifting rod 7 slidingly connected to the bottom of the graphite crucible 3, a lifting motor 8 fixed at the bottom of the cavity 1 and connected to the bottom of the hollow lifting rod 7,
  • the hollow elevating rod 7 runs through the bottom of the cavity 1.
  • the bottom end of the graphite crucible 3 is provided with an annular chute 9, and the top of the hollow elevating rod 7 is equipped with a sliding roller 10 matching the annular chute 9;
  • the rotating mechanism 6 includes a stepping motor 11 fixed in the hollow elevating rod 7 , a rotating rod 12 coaxially fixedly connected with the output shaft of the stepping motor 11 , and the rotating rod 12 is fixedly connected with the bottom of the graphite crucible 3 .
  • the working principle and operation process of this application fill the graphite crucible 3 in each growth chamber 2 with silicon carbide raw material 22, fix the silicon carbide seed crystal 23 on the seed crystal tray 4, and check the cavity 1 Internal airtightness, vacuumize and heat up to the required pressure and temperature of chamber 1 and graphite crucible 3, and carry out synchronous growth of silicon carbide crystals.
  • the horizontal cross-sectional shape of the growth cavity 2 in this embodiment is a regular octagon.
  • a multi-crucible method for synchronous growth of silicon carbide crystals using the growth equipment described in Example 1 to perform synchronous growth of silicon carbide crystals, comprising the following steps:
  • the vacuumized pump body can use an existing molecular pump or a dry scroll pump, and the pump body is connected to the cavity 1 through a vacuum pipeline (not shown in the figure), and the rotating motor fixed at the bottom of the synchronous growth device is turned on, and the The power of the high heater assembly makes the temperature in the chamber 1 reach 500°C, fill the chamber 1 with a mixed gas including nitrogen and argon, and after detecting that the temperature in the chamber 1 is higher than 1500°C, adjust the temperature in the chamber 1 Keep the pressure at about 10000Pa, continue to increase the power of the heater assembly until the temperature of the graphite crucible 3 rises to 2100°C;
  • Adjust the power ratio of the heater assembly so that the temperature at the bottom of the graphite crucible 3 is 10°C higher than the temperature at the top of the graphite crucible 3, and adjust the position of the graphite crucible 3 through the drive assembly so that the temperature of the silicon carbide raw material in the graphite crucible 3 is higher than that of the seed crystal
  • the temperature is higher than 15°C, and the pressure in chamber 1 is lowered to maintain around 50Pa, entering the crystal growth stage of conductive silicon carbide crystal;
  • a multi-crucible silicon carbide crystal synchronous growth method using the growth equipment described in Embodiment 2 to perform synchronous growth of silicon carbide crystals, the only difference is that the horizontal cross-sectional shape of the growth chamber 2 is different.
  • a multi-crucible silicon carbide crystal synchronous growth method using the growth equipment described in embodiment 1 to perform synchronous growth of silicon carbide crystals, including the same steps as embodiment 3, but different from embodiment 3, this embodiment is in step S1
  • the gas charged is a mixed gas of hydrogen and argon, which is used to grow semi-insulating silicon carbide crystals, and the rest of the conditions are the same.
  • a multi-crucible silicon carbide crystal synchronous growth method the gas charged in step S1 is a mixed gas of hydrogen and argon, used to grow semi-insulating silicon carbide crystals, the difference from embodiment 5 is that this embodiment uses the The growth equipment described in Example 2 performs simultaneous growth of silicon carbide crystals, and the horizontal cross-sectional shape of the growth chamber 2 is a regular octagon.
  • a multi-crucible silicon carbide crystal synchronous growth equipment includes a cavity 1 and an insulation layer assembly arranged close to the inner wall of the cavity 1.
  • the independent growth assembly includes a graphite crucible 3, a seed crystal tray 4 arranged on the top of the graphite crucible 3, a heater assembly arranged on the periphery of the graphite crucible 3, a drive assembly arranged at the bottom of the graphite crucible 3, and the heater assembly includes winding
  • the first heater 13 and the second heater 14 on the graphite crucible 3 periphery and the third heater 15 fixed on the bottom of the graphite crucible 3 define the height of the graphite crucible 3 as M, and the height of the silicon carbide raw material is contained in the present embodiment.
  • the first heater 13 and the second heater 14 are all wound around the periphery of the graphite crucible 3, and the first heater 13 is arranged on the upper edge of the graphite crucible 3 to the edge of the graphite crucible 3.
  • the second heater 14 is arranged between the height of 1/2M of the graphite crucible 3 and the lower edge of the graphite crucible 3, so as to ensure that the height of the upper edge of the second heater 14 does not exceed the height of the silicon carbide raw material.
  • a first electrode 19 is fixed on each first heater 13, a second electrode 20 is fixed on each second heater 14, and a third electrode 21 is fixed on each third heater 15.
  • the electrodes 19, the second electrodes 20 and the third electrodes 21 all extend to the outside of the cavity 1 and are electrically connected to the controller.
  • the first electrodes 19 are embedded between the first insulation layer 16 and the second insulation layer 17,
  • the second electrode 20 is embedded between the second insulation layer 17 and the third insulation layer 18
  • the third electrode 21 penetrates through the third insulation layer 18 .
  • the horizontal section shape of the growth chamber 2 in this embodiment is circular.
  • a drive assembly is connected to the bottom of the graphite crucible 3 , and the drive assembly is used to drive the graphite crucible 3 to move in the growth chamber 2 .
  • the drive assembly includes a lifting mechanism 5 and a rotating mechanism 6;
  • the lifting mechanism 5 includes a hollow lifting rod 7 slidingly connected to the bottom of the graphite crucible 3, a lifting motor 8 fixed at the bottom of the cavity 1 and connected to the bottom of the hollow lifting rod 7,
  • the hollow elevating rod 7 runs through the bottom of the cavity 1.
  • the bottom end of the graphite crucible 3 is provided with an annular chute 9, and the top of the hollow elevating rod 7 is equipped with a sliding roller 10 matching the annular chute 9;
  • the rotating mechanism 6 includes a stepping motor 11 fixed in the hollow elevating rod 7 , a rotating rod 12 coaxially fixedly connected with the output shaft of the stepping motor 11 , and the rotating rod 12 is fixedly connected with the bottom of the graphite crucible 3 .
  • the working principle and operation process of this application fill the graphite crucible 3 in each growth chamber 2 with silicon carbide raw material 22, fix the silicon carbide seed crystal 23 on the seed crystal tray 4, and check the cavity 1 Internal airtightness, vacuumize and heat up to the required pressure and temperature of chamber 1 and graphite crucible 3, and carry out synchronous growth of silicon carbide crystals.
  • ⁇ The growth efficiency of silicon carbide crystals is high; ⁇ : The growth efficiency of silicon carbide crystals is average; ⁇ : The growth efficiency of silicon carbide crystals is low.
  • ⁇ The silicon carbide crystal is complete and the surface is smooth; ⁇ : The silicon carbide crystal is complete but there are cracks on the surface; ⁇ : The silicon carbide crystal is poor in shape.
  • Table 1 shows the test results of the above test example 1 and test example 2.
  • Test example 1 Test example 2
  • Example 3 ⁇ ⁇ Example 4 ⁇ ⁇ Example 5 ⁇ ⁇ Example 6 ⁇ ⁇ Comparative example 1 x ⁇ Comparative example 2 ⁇ x

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Abstract

一种多坩埚碳化硅晶体同步生长方法及设备，其生长设备包括腔体、靠近腔体内壁设置的保温层组件：所述保温层组件的内部间隔设置若干加热器组件，在所述加热器组件内部空间构成若干独立的生长腔，每个生长腔内均设置有独立生长组件；所述独立生长组件包括石墨坩埚、设置在石墨坩埚顶部的籽晶托盘、坩埚底部的驱动组件。

Description

一种多坩埚碳化硅晶体同步生长方法及设备
相关申请的交叉引用
本申请要求享有于2021年11月15日提交的名称为“一种多坩埚碳化硅晶体同步生长方法及设备”的中国专利申请202111349816.1的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请是一种多坩埚碳化硅晶体同步生长方法及设备，属于碳化硅晶体技术领域。
背景技术
碳化硅晶体是一种性能优秀的第三代宽带隙半导体材料，具有宽带隙、高载流子饱和浓度、高临界击穿电场、高热导率、高化学性能稳定等特点，是制备高频、大功率、高密度、高温、抗辐射等集成电子器件的最佳材料，但是由于目前碳化硅晶体生长条件苛刻、生长速度缓慢，碳化硅晶体的生长成本很高，使碳化硅晶体只能应用在高附加值的电子元器件上。
工业化生长碳化硅晶体主要采用物理气相输运(PVT)法，即在2100℃以上加热使盛装在石墨坩埚内的碳化硅原料升华和分解产生的气体输运至籽晶处重新结晶，得到面积较大的碳化硅(SiC)单晶。
目前行业内普遍采用感应加热的PVT方法生长碳化硅晶体，感应 线圈使石墨坩埚产生涡流直接发热，涡流主要集中在石墨坩埚表面，导致坩埚内温度的径向梯度较大，从而在晶体生长过程中温度的径向梯度较大，导致晶体内部应力过大而开裂，特别是在生长大尺寸晶体时，晶体生长环节的良率偏低；另外，传统的PVT生长装置是在一个腔体内安装一个坩埚，某时间段之内只能生长一块碳化硅晶体，但由于碳化硅晶体生长温度高、生长速度缓慢、设备昂贵等特点，导致碳化硅晶体的生长成本远高于硅单晶的成本，在很大程度上限制了碳化硅晶体的应用范围。
发明内容
针对相关技术存在的不足，本申请目的之一是提供一种多坩埚碳化硅晶体同步生长方法及设备，以解决上述背景技术中提出的问题。
为了实现上述第一个目的，提供一种多坩埚碳化硅晶体同步生长设备，本申请通过如下技术方案实现。
一种多坩埚碳化硅晶体同步生长设备，包括腔体、靠近腔体内壁设置的保温层组件：所述保温层组件的内部间隔设置若干加热器组件，在所述加热器组件内部空间构成若干独立的生长腔，每个生长腔内均设置有独立生长组件；所述独立生长组件包括石墨坩埚、设置在石墨坩埚顶部的籽晶托盘；该设置方式既保证了腔体周围被保温层完全覆盖，保温层的内部间隔设置的多个加热器组件内部空间又能构成多个生长腔，多个生长腔互不干扰，能够实现碳化硅晶体的同步生长，提高碳化硅晶体的生长效率。
可选地，所述生长腔的水平截面形状为圆形。
可选地，所述生长腔的水平截面形状为对称多边形，且边数≥4。
可选地，所述石墨坩埚底部连接有驱动组件，驱动组件用于驱动石墨坩埚在生长腔内移动。
可选地，所述驱动组件包括升降机构和旋转机构；所述升降机构包括滑动连接在石墨坩埚底部的空心升降杆、固定在腔体底部且与空心升降杆底端相连的升降电机；所述旋转机构包括固定在空心升降杆内的步进电机、与步进电机的输出轴同轴固定连接的旋转杆，所述旋转杆与石墨坩埚底部固定连接；旋转机构设置在升降机构内部但二者各自作用互不干扰，一方面保证驱动组件对石墨坩埚位置调节的精确性，另一方面单独调节石墨坩埚的高度和角度比较简单便捷。
可选地，所述空心升降杆贯穿腔体底部。
可选地，所述石墨坩埚底端开设有环状滑槽，空心升降杆顶端安装有与环状滑槽相适配的滑辊。
可选地，所述加热器组件包括绕设在石墨坩埚外周的第一加热器和第二加热器以及固定在石墨坩埚底部的第三加热器。
可选地，定义石墨坩埚的高度为M，所述第一加热器和第二加热器均绕设在石墨坩埚外周，第一加热器设置在石墨坩埚上边缘至石墨坩埚的1/4M高度之间，第二加热器设置在石墨坩埚的3/4M高度至石墨坩埚下边缘之间，且第二加热器的高度不超过碳化硅原料的高度。
为了实现第二个目的，提供一种多坩埚碳化硅晶体同步生长方法，本申请通过下述技术方案实现。
一种多坩埚碳化硅晶体同步生长方法，用上述生长设备进行碳化硅晶体的同步生长，包括如下步骤：
S1.预加热阶段
安装好石墨坩埚、驱动组件以及碳化硅原料后，检查腔体内气密性，抽真空至腔体内压强在0.1-5Pa范围内，进一步抽真空至腔体内压强在10 -2-10 -5Pa范围内，升高加热器组件的功率使腔体内温度达到500-700℃范围内，向腔体内充入包括氮气/氢气与惰性气体的混合气体，检测到腔体内温度高于1500℃后，调节腔体内压强维持在10000-70000Pa范围内，继续提高加热器组件的功率直至石墨坩埚温度升高到2100℃；
S2.长晶阶段
调节加热器组件的功率比例，使石墨坩埚底部的温度比石墨坩埚上部的温度高出10-100℃，通过驱动组件调节石墨坩埚的位置，使石墨坩埚内碳化硅原料的温度比籽晶的温度高出15-80℃，下调腔体内压强维持在50-2500Pa范围内，进入晶体生长阶段；
S3.生长结束阶段
晶体生长结束后，调节腔体内压强维持在2500-10000Pa范围内，下调加热器组件的功率使石墨坩埚底部和石墨坩埚上部的温度差缩小到20℃以内，继续缓慢下调加热器组件的功率直到功率为0。
为了实现上述第一个目的，还提供一种多坩埚碳化硅晶体同步生长设备，本申请通过如下技术方案实现。
一种多坩埚碳化硅晶体同步生长设备，包括腔体、靠近腔体内壁 设置的保温层组件：所述保温层组件将腔体内分隔成若干独立的生长腔，每个生长腔内均设置有独立生长组件；所述独立生长组件包括石墨坩埚、设置在石墨坩埚顶部的籽晶托盘、设置在石墨坩埚外周的加热器组件；该设置方式既保证了腔体周围被保温层完全覆盖，又能将腔体分割成多个生长腔，多个生长腔互不干扰，能够实现碳化硅晶体的同步生长，提高碳化硅晶体的生长效率。
可选地，所述生长腔的水平截面形状为圆形。
可选地，所述生长腔的水平截面形状为对称多边形，且边数≥4。
可选地，所述石墨坩埚底部连接有驱动组件，驱动组件用于驱动石墨坩埚在生长腔内移动。
可选地，所述驱动组件包括升降机构和旋转机构；所述升降机构包括滑动连接在石墨坩埚底部的空心升降杆、固定在腔体底部且与空心升降杆底端相连的升降电机；所述旋转机构包括固定在空心升降杆内的步进电机、与步进电机的输出轴同轴固定连接的旋转杆，所述旋转杆与石墨坩埚底部固定连接；旋转机构设置在升降机构内部但二者各自作用互不干扰，一方面保证驱动组件对石墨坩埚位置调节的精确性，另一方面单独调节石墨坩埚的高度和角度比较简单便捷。
可选地，所述空心升降杆贯穿腔体底部。
可选地，所述石墨坩埚底端开设有环状滑槽，空心升降杆顶端安装有与环状滑槽相适配的滑辊。
可选地，所述加热器组件包括绕设在石墨坩埚外周的第一加热器和第二加热器以及固定在石墨坩埚底部的第三加热器。
可选地，定义石墨坩埚的高度为M，所述第一加热器和第二加热器均绕设在石墨坩埚外周，第一加热器设置在石墨坩埚上边缘至石墨坩埚的1/4M高度之间，第二加热器设置在石墨坩埚的3/4M高度至石墨坩埚下边缘之间，且第二加热器的高度不超过碳化硅原料的高度。
本申请的有益效果:
(1)本申请涉及一种多坩埚碳化硅晶体同步生长设备，该设备采用多段式独立控制的石墨加热器发热，取代传统的感应加热方式，可以更加精确地调节坩埚的径向和纵向温度梯度，既能加快晶体的生长速度，又能降低晶体的内部应力。
(2)本申请涉及一种多坩埚碳化硅晶体同步生长设备，其中，每个坩埚都位于独立的空间，创造出类似传统单坩埚设备的晶体生长环境，避免了不同晶体在生长过程中相互干扰，确保晶体质量不低于单坩埚生长的水平。
(3)本申请涉及一种多坩埚碳化硅晶体同步生长设备，其中，每个坩埚都带有独立的升降和旋转机构，可以更加精确地针对每个坩埚调节径向和纵向的温度梯度，也可以把不同的坩埚调节成不同的温度梯度，加快研发晶体生长工艺的速度，降低研发成本。
(4)本申请涉及一种多坩埚碳化硅晶体同步生长设备，其中，加热器组件包括独立设置互不干扰的第一加热器、第二加热器和第三加热器，第二加热器和第三加热器用于调节碳化硅原料的温度，尤其第二加热器在保证能调节到碳化硅原料所受温度的同时尽量避免影 响对籽晶托盘中的碳化硅籽晶产生影响，实现碳化硅原料和碳化硅籽晶分别控制温度的目的。
(5)本申请涉及一种多坩埚碳化硅晶体同步生长方法，其中，不同的坩埚可以生长不同直径的碳化硅晶体，4寸、6寸和8寸的晶体可以在一台设备里同时生长，满足生产任务的需要。
(6)本申请涉及一种多坩埚碳化硅晶体同步生长方法，其中，多个坩埚同步生长，可一炉生长多块晶体，大幅提升单炉产能，降低单位产品的能源、设备和人员成本，缩小与单晶硅的成本差距，既能大幅降低碳化硅晶体的生长成本，又能确保单块晶锭的内部质量，扩大碳化硅晶体的应用领域。
附图说明
通过阅读参照以下附图对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1为本申请多坩埚碳化硅晶体同步生长设备的俯视结构示意图；
图2为本申请多坩埚碳化硅晶体同步生长设备的主视结构示意图；
图3为本申请图2中A处的放大示意图；
图4为本申请另一多坩埚碳化硅晶体同步生长设备的俯视结构示意图；
图5为本申请另一多坩埚碳化硅晶体同步生长设备的主视结构 示意图。
图中：1腔体，2生长腔，3石墨坩埚，4籽晶托盘，5升降机构，6旋转机构，7空心升降杆，8升降电机，9环状滑槽，10滑辊，11步进电机，12旋转杆，13第一加热器，14第二加热器，15第三加热器，16第一保温层，17第二保温层，18第三保温层，19第一电极，20第二电极，21第三电极，22碳化硅原料，23碳化硅籽晶。
具体实施方式
为使本申请实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施方式，进一步阐述本申请。
实施例1
如图1和图2所示，一种多坩埚碳化硅晶体同步生长设备，包括腔体1、靠近腔体1内壁设置的保温层组件，保温层组件包括由上至下依次靠近在腔体1内壁的第一保温层16、第二保温层17和第三保温层18：所述保温层组件的内部间隔设置若干加热器组件，在所述加热器组件内部空间构成若干独立的生长腔2，每个生长腔内均设置有独立生长组件；所述独立生长组件包括石墨坩埚3、设置在石墨坩埚3顶部的籽晶托盘4、设置在石墨坩埚3底部的驱动组件，加热器组件包括绕设在石墨坩埚3外周的第一加热器13和第二加热器14以及固定在石墨坩埚3底部的第三加热器15，定义石墨坩埚3的高度为M，本实施例中碳化硅原料的高度盛装到石墨坩埚3的1/2M高度处，所述第一加热器13和第二加热器14均绕设在石墨坩埚3外周， 第一加热器13设置在石墨坩埚3上边缘至石墨坩埚3的1/2M高度之间，第二加热器14设置在石墨坩埚3的1/2M高度至石墨坩埚3下边缘之间，保证第二加热器14的上边缘高度不超过碳化硅原料的高度，每个第一加热器13上均固定有第一电极19、每个第二加热器14上均固定有第二电极20、且每个第三加热器15上均固定有第三电极21，第一电极19、第二电极20和第三电极21均延伸至腔体1的外侧与控制器电连接，相应的，第一电极19嵌合在第一保温层16和第二保温层17之间，第二电极20嵌合在第二保温层17和第三保温层18之间，第三电极21贯穿第三保温层18。
本实施例中生长腔2的水平截面形状为圆形。
石墨坩埚3底部连接有驱动组件，驱动组件用于驱动石墨坩埚3在生长腔2内移动。
驱动组件包括升降机构5和旋转机构6；所述升降机构5包括滑动连接在石墨坩埚3底部的空心升降杆7、固定在腔体1底部且与空心升降杆7底端相连的升降电机8，空心升降杆7贯穿腔体1底部，结合图3，石墨坩埚3底端开设有环状滑槽9，空心升降杆7顶端安装有与环状滑槽9相适配的滑辊10；所述旋转机构6包括固定在空心升降杆7内的步进电机11、与步进电机11的输出轴同轴固定连接的旋转杆12，所述旋转杆12与石墨坩埚3底部固定连接。
综上，本申请的工作原理和操作过程：向每个生长腔2内的石墨坩埚3内填装碳化硅原料22，将碳化硅籽晶23固定在籽晶托盘4上，检查好腔体1内气密性，抽真空并升温至腔体1和石墨坩埚3达到所 需压强和温度，进行碳化硅晶体的同步生长，生长过程中，单独调节加热器组件以及每个独立生长组件的升降机构5和旋转机构6，调节石墨坩埚3的温度和在生长腔2内的位置。
实施例2
不同于实施例1，本实施例中生长腔2的水平截面形状为正八边形。
实施例3
一种多坩埚碳化硅晶体同步生长方法，用实施例1所述生长设备进行碳化硅晶体的同步生长，包括如下步骤：
S1.预加热阶段
安装好石墨坩埚3、驱动组件以及碳化硅原料后，检查腔体1内气密性，抽真空至腔体1内压强在5Pa左右，进一步抽真空至腔体1内压强在10 -5Pa左右，抽真空的泵体可以使用现有的分子泵或干式涡旋泵，泵体通过真空管道与腔体1相连(图中未示出)，打开固定在同步生长设备底部的旋转电机，升高加热器组件的功率使腔体1内温度达到500℃，向腔体1内充入包括氮气与氩气的混合气体，检测到腔体1内温度高于1500℃后，调节腔体1内压强维持在10000Pa左右，继续提高加热器组件的功率直至石墨坩埚3温度升高到2100℃；
S2.长晶阶段
调节加热器组件的功率比例，使石墨坩埚3底部的温度比石墨坩埚3上部的温度高出10℃，通过驱动组件调节石墨坩埚3的位置，使石墨坩埚3内碳化硅原料的温度比籽晶的温度高出15℃，下调腔 体1内压强维持在50Pa左右，进入导电型碳化硅晶体的晶体生长阶段；
S3.生长结束阶段
晶体生长结束后，调节腔体1内压强维持在10000Pa范围内，下调加热器组件的功率使石墨坩埚3底部和石墨坩埚3上部的温度差缩小到20℃以内，继续缓慢下调加热器组件的功率直到功率为0。
实施例4
一种多坩埚碳化硅晶体同步生长方法，用实施例2所述生长设备进行碳化硅晶体的同步生长，区别仅在于生长腔2的水平截面形状不同。
实施例5
一种多坩埚碳化硅晶体同步生长方法，用实施例1所述生长设备进行碳化硅晶体的同步生长，包括的步骤与实施例3相同，但不同于实施例3，本实施例在步骤S1中充入的气体为氢气和氩气的混合气体，用于生长半绝缘型碳化硅晶体，其余条件相同。
实施例6
一种多坩埚碳化硅晶体同步生长方法，在步骤S1中充入的气体为氢气和氩气的混合气体，用于生长半绝缘型碳化硅晶体，与实施例5的区别在于本实施例用实施例2所述生长设备进行碳化硅晶体的同步生长，生长腔2的水平截面形状为正八边形。
实施例7
如图4和图5所示，一种多坩埚碳化硅晶体同步生长设备，包括 腔体1、靠近腔体1内壁设置的保温层组件，保温层组件包括由上至下依次靠近在腔体1内壁的第一保温层16、第二保温层17和第三保温层18：所述保温层组件将腔体1内分隔成若干独立的生长腔2，每个生长腔内均设置有独立生长组件；所述独立生长组件包括石墨坩埚3、设置在石墨坩埚3顶部的籽晶托盘4、设置在石墨坩埚3外周的加热器组件、设置在石墨坩埚3底部的驱动组件，加热器组件包括绕设在石墨坩埚3外周的第一加热器13和第二加热器14以及固定在石墨坩埚3底部的第三加热器15，定义石墨坩埚3的高度为M，本实施例中碳化硅原料的高度盛装到石墨坩埚3的1/2M高度处，所述第一加热器13和第二加热器14均绕设在石墨坩埚3外周，第一加热器13设置在石墨坩埚3上边缘至石墨坩埚3的1/2M高度之间，第二加热器14设置在石墨坩埚3的1/2M高度至石墨坩埚3下边缘之间，保证第二加热器14的上边缘高度不超过碳化硅原料的高度，每个第一加热器13上均固定有第一电极19、每个第二加热器14上均固定有第二电极20、且每个第三加热器15上均固定有第三电极21，第一电极19、第二电极20和第三电极21均延伸至腔体1的外侧与控制器电连接，相应的，第一电极19嵌合在第一保温层16和第二保温层17之间，第二电极20嵌合在第二保温层17和第三保温层18之间，第三电极21贯穿第三保温层18。
本实施例中生长腔2的水平截面形状为圆形。
石墨坩埚3底部连接有驱动组件，驱动组件用于驱动石墨坩埚3在生长腔2内移动。
驱动组件包括升降机构5和旋转机构6；所述升降机构5包括滑动连接在石墨坩埚3底部的空心升降杆7、固定在腔体1底部且与空心升降杆7底端相连的升降电机8，空心升降杆7贯穿腔体1底部，结合图3，石墨坩埚3底端开设有环状滑槽9，空心升降杆7顶端安装有与环状滑槽9相适配的滑辊10；所述旋转机构6包括固定在空心升降杆7内的步进电机11、与步进电机11的输出轴同轴固定连接的旋转杆12，所述旋转杆12与石墨坩埚3底部固定连接。
综上，本申请的工作原理和操作过程：向每个生长腔2内的石墨坩埚3内填装碳化硅原料22，将碳化硅籽晶23固定在籽晶托盘4上，检查好腔体1内气密性，抽真空并升温至腔体1和石墨坩埚3达到所需压强和温度，进行碳化硅晶体的同步生长，生长过程中，单独调节每个独立生长组件的加热器组件、升降机构5和旋转机构6，调节石墨坩埚3的温度和在生长腔2内的位置。
对比例1
采用申请公布号为CN110129880A的发明专利所述的单晶生长装置及其生长方法。
对比例2
采用申请公布号为CN104364428A的发明专利所述的单晶生长装置及其生长方法。
试验例1
选用对比例1和对比例2中涉及的单晶生长装置和相应的生长方法作为对照，观察统计碳化硅晶体的生长情况，与本申请实施例3至 实施例6中所述生长方法进行对比。
○：碳化硅晶体生长效率高；□：碳化硅晶体生长效率一般；×：碳化硅晶体生长效率较低。
试验例2
选用对比例1和对比例2中涉及的单晶生长装置和相应的生长方法作为对照，观察统计制备出的碳化硅晶体的形态，与本申请实施例3至实施例6中所述生长方法进行对比。
○：碳化硅晶体形态完整且表面光滑；□：碳化硅晶体形态完整但表面有裂缝；×：碳化硅晶体形态不佳。
上述试验例1和试验例2的试验结果如表1所示。
表1试验例的试验结果
  试验例1 试验例2
实施例3 ○ ○
实施例4 ○ ○
实施例5 ○ ○
实施例6 ○ ○
对比例1 × □
对比例2 □ ×
经过对比实施例3至实施例6中各项试验结果可以看出：使用此生长设备以及此生长方法制备出来的碳化硅单晶，相比于目前由现有普通方法生长的碳化硅单晶，表面更加光洁、内部应力更低、开裂比例大幅下降，晶体生长的良率显著提升。
以上显示和描述了本申请的基本原理和主要特征和本申请的优点，对于本领域技术人员而言，显然本申请不限于上述示范性实施例的细节，而且在不背离本申请的精神或基本特征的情况下，能够以其他的具体形式实现本申请。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本申请的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本申请内。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (19)

  1. 一种多坩埚碳化硅晶体同步生长设备，包括腔体(1)、靠近腔体(1)内壁设置的保温层组件，
    所述保温层组件的内部间隔设置若干加热器组件，在所述加热器组件内部空间构成若干独立的生长腔(2)，每个生长腔(2)内均设置有独立生长组件；
    所述独立生长组件包括石墨坩埚(3)、设置在石墨坩埚(3)顶部的籽晶托盘(4)。
  2. 根据权利要求1所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述生长腔(2)的水平截面形状为圆形。
  3. 根据权利要求1所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述生长腔(2)的水平截面形状为对称多边形，且边数≥4。
  4. 根据权利要求2或3所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述每个石墨坩埚(3)底部连接有各自的驱动组件，驱动组件用于驱动石墨坩埚(3)在生长腔(2)内移动。
  5. 根据权利要求4所述的一种多坩埚碳化硅晶体同步生长设备，其中，
    所述驱动组件包括升降机构(5)和旋转机构(6)；
    所述升降机构(5)包括滑动连接在石墨坩埚(3)底部的空心升降杆(7)、固定在腔体(1)底部且与空心升降杆(7)底端相连的升降电机(8)；
    所述旋转机构(6)包括固定在空心升降杆(7)内的步进电机(11)、 与步进电机(11)的输出轴同轴固定连接的旋转杆(12)，所述旋转杆(12)与石墨坩埚(3)底部固定连接。
  6. 根据权利要求5所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述空心升降杆(7)贯穿腔体(1)底部。
  7. 根据权利要求5所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述石墨坩埚(3)底端开设有环状滑槽(9)，空心升降杆(7)顶端安装有与环状滑槽(9)相适配的滑辊(10)。
  8. 根据权利要求6或7所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述加热器组件包括绕设在石墨坩埚(3)外周的第一加热器(13)和第二加热器(14)以及固定在石墨坩埚(3)底部的第三加热器(15)。
  9. 根据权利要求8所述的一种多坩埚碳化硅晶体同步生长设备，其中，定义石墨坩埚(3)的高度为M，所述第一加热器(13)和第二加热器(14)均绕设在石墨坩埚(3)外周，第一加热器(13)设置在石墨坩埚(3)上边缘至石墨坩埚(3)的1/4M高度之间，第二加热器(14)设置在石墨坩埚(3)的3/4M高度至石墨坩埚(3)下边缘之间，且第二加热器(14)的高度不超过碳化硅原料的高度。
  10. 一种多坩埚碳化硅晶体同步生长方法，用权利要求4至9任意所述的生长设备进行碳化硅晶体的同步生长，包括如下步骤：
    S1.预加热阶段
    安装好石墨坩埚(3)、驱动组件以及碳化硅原料后，检查腔体(1)内气密性，抽真空至腔体(1)内压强在0.1-5Pa范围内，进一步抽 真空至腔体(1)内压强在10 -2-10 -5Pa范围内，升高加热器组件的功率使腔体(1)内温度达到500-700℃范围内，向腔体(1)内充入包括氮气/氢气与惰性气体的混合气体，检测到腔体(1)内温度高于1500℃后，调节腔体(1)内压强维持在10000-70000Pa范围内，继续提高加热器组件的功率直至石墨坩埚(3)温度升高到2100℃；
    S2.长晶阶段
    调节加热器组件的功率比例，使石墨坩埚(3)底部的温度比石墨坩埚(3)上部的温度高出10-100℃，通过驱动组件调节石墨坩埚(3)的位置，使石墨坩埚(3)内碳化硅原料的温度比籽晶的温度高出15-80℃，下调腔体(1)内压强维持在50-2500Pa范围内，进入晶体生长阶段；
    S3.生长结束阶段
    晶体生长结束后，调节腔体(1)内压强维持在2500-10000Pa范围内，下调加热器组件的功率使石墨坩埚(3)底部和石墨坩埚(3)上部的温度差缩小到20℃以内，继续缓慢下调加热器组件的功率直到功率为0。
  11. 一种多坩埚碳化硅晶体同步生长设备，包括腔体(1)、靠近腔体(1)内壁设置的保温层组件，
    所述保温层组件将腔体(1)内分隔成若干独立的生长腔(2)，每个生长腔(2)内均设置有独立生长组件；
    所述独立生长组件包括石墨坩埚(3)、设置在所述石墨坩埚(3)顶部的籽晶托盘(4)以及设置在所述石墨坩埚(3)外周的加热器组 件。
  12. 根据权利要求11所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述生长腔(2)的水平截面形状为圆形。
  13. 根据权利要求11所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述生长腔(2)的水平截面形状为对称多边形，且边数≥4。
  14. 根据权利要求12或13所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述每个石墨坩埚(3)底部连接有各自的驱动组件，驱动组件用于驱动石墨坩埚(3)在生长腔(2)内移动。
  15. 根据权利要求14所述的一种多坩埚碳化硅晶体同步生长设备，其中，
    所述驱动组件包括升降机构(5)和旋转机构(6)；
    所述升降机构(5)包括滑动连接在石墨坩埚(3)底部的空心升降杆(7)、固定在腔体(1)底部且与空心升降杆(7)底端相连的升降电机(8)；
    所述旋转机构(6)包括固定在空心升降杆(7)内的步进电机(11)、与步进电机(11)的输出轴同轴固定连接的旋转杆(12)，所述旋转杆(12)与石墨坩埚(3)底部固定连接。
  16. 根据权利要求15所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述空心升降杆(7)贯穿腔体(1)底部。
  17. 根据权利要求15所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述石墨坩埚(3)底端开设有环状滑槽(9)，空心升降 杆(7)顶端安装有与环状滑槽(9)相适配的滑辊(10)。
  18. 根据权利要求6或7所述的一种多坩埚碳化硅晶体同步生长设备，其中，所述加热器组件包括绕设在石墨坩埚(3)外周的第一加热器(13)和第二加热器(14)以及固定在石墨坩埚(3)底部的第三加热器(15)。
  19. 根据权利要求18所述的一种多坩埚碳化硅晶体同步生长设备，其中，定义石墨坩埚(3)的高度为M，所述第一加热器(13)和第二加热器(14)均绕设在石墨坩埚(3)外周，第一加热器(13)设置在石墨坩埚(3)上边缘至石墨坩埚(3)的1/4M高度之间，第二加热器(14)设置在石墨坩埚(3)的3/4M高度至石墨坩埚(3)下边缘之间，且第二加热器(14)的高度不超过碳化硅原料的高度。
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