WO2023053441A1 - 立方晶窒化硼素焼結体 - Google Patents
立方晶窒化硼素焼結体 Download PDFInfo
- Publication number
- WO2023053441A1 WO2023053441A1 PCT/JP2021/036415 JP2021036415W WO2023053441A1 WO 2023053441 A1 WO2023053441 A1 WO 2023053441A1 JP 2021036415 W JP2021036415 W JP 2021036415W WO 2023053441 A1 WO2023053441 A1 WO 2023053441A1
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- WO
- WIPO (PCT)
- Prior art keywords
- boron nitride
- cubic boron
- sintered body
- volume
- group
- Prior art date
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 198
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 197
- 239000002245 particle Substances 0.000 claims abstract description 75
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 14
- 239000010941 cobalt Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 9
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 9
- 229910021476 group 6 element Inorganic materials 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 239000006104 solid solution Substances 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000011230 binding agent Substances 0.000 claims description 92
- 239000011800 void material Substances 0.000 claims description 54
- 239000000463 material Substances 0.000 abstract description 16
- 239000000843 powder Substances 0.000 description 75
- 238000000034 method Methods 0.000 description 54
- 238000005259 measurement Methods 0.000 description 43
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- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 2
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- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- RHDUVDHGVHBHCL-UHFFFAOYSA-N niobium tantalum Chemical compound [Nb].[Ta] RHDUVDHGVHBHCL-UHFFFAOYSA-N 0.000 description 2
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- VSSLEOGOUUKTNN-UHFFFAOYSA-N tantalum titanium Chemical compound [Ti].[Ta] VSSLEOGOUUKTNN-UHFFFAOYSA-N 0.000 description 2
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 2
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910020639 Co-Al Inorganic materials 0.000 description 1
- 229910020675 Co—Al Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910015421 Mo2N Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910009594 Ti2AlN Inorganic materials 0.000 description 1
- 229910010169 TiCr Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical compound [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 description 1
- HAWOWGSQUYVHKC-UHFFFAOYSA-N [Hf].[Mo] Chemical compound [Hf].[Mo] HAWOWGSQUYVHKC-UHFFFAOYSA-N 0.000 description 1
- AUTWRGZQAIMMQA-UHFFFAOYSA-N [Hf].[Nb] Chemical compound [Hf].[Nb] AUTWRGZQAIMMQA-UHFFFAOYSA-N 0.000 description 1
- VSTCOQVDTHKMFV-UHFFFAOYSA-N [Ti].[Hf] Chemical compound [Ti].[Hf] VSTCOQVDTHKMFV-UHFFFAOYSA-N 0.000 description 1
- WFISYBKOIKMYLZ-UHFFFAOYSA-N [V].[Cr] Chemical compound [V].[Cr] WFISYBKOIKMYLZ-UHFFFAOYSA-N 0.000 description 1
- GNBSAMIOGXVJIJ-UHFFFAOYSA-N [V].[Ta] Chemical compound [V].[Ta] GNBSAMIOGXVJIJ-UHFFFAOYSA-N 0.000 description 1
- DIVGJYVPMOCBKD-UHFFFAOYSA-N [V].[Zr] Chemical compound [V].[Zr] DIVGJYVPMOCBKD-UHFFFAOYSA-N 0.000 description 1
- SWCGXFPZSCXOFO-UHFFFAOYSA-N [Zr].[Mo] Chemical compound [Zr].[Mo] SWCGXFPZSCXOFO-UHFFFAOYSA-N 0.000 description 1
- QBXVTOWCLDDBIC-UHFFFAOYSA-N [Zr].[Ta] Chemical compound [Zr].[Ta] QBXVTOWCLDDBIC-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- VDZMENNHPJNJPP-UHFFFAOYSA-N boranylidyneniobium Chemical compound [Nb]#B VDZMENNHPJNJPP-UHFFFAOYSA-N 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- LAROCDZIZGIQGR-UHFFFAOYSA-N boron;vanadium Chemical compound B#[V]#B LAROCDZIZGIQGR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- SEGDSKBQYPCVFK-UHFFFAOYSA-N chromium hafnium Chemical compound [Cr][Hf] SEGDSKBQYPCVFK-UHFFFAOYSA-N 0.000 description 1
- QVZNQFNKKMMPFH-UHFFFAOYSA-N chromium niobium Chemical compound [Cr].[Nb] QVZNQFNKKMMPFH-UHFFFAOYSA-N 0.000 description 1
- HBCZDZWFGVSUDJ-UHFFFAOYSA-N chromium tantalum Chemical compound [Cr].[Ta] HBCZDZWFGVSUDJ-UHFFFAOYSA-N 0.000 description 1
- JUVGUSVNTPYZJL-UHFFFAOYSA-N chromium zirconium Chemical compound [Cr].[Zr] JUVGUSVNTPYZJL-UHFFFAOYSA-N 0.000 description 1
- NUEWEVRJMWXXFB-UHFFFAOYSA-N chromium(iii) boride Chemical compound [Cr]=[B] NUEWEVRJMWXXFB-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- QKQUUVZIDLJZIJ-UHFFFAOYSA-N hafnium tantalum Chemical compound [Hf].[Ta] QKQUUVZIDLJZIJ-UHFFFAOYSA-N 0.000 description 1
- UHOTUEJTVWSSKI-UHFFFAOYSA-N hafnium vanadium Chemical compound [V].[V].[Hf] UHOTUEJTVWSSKI-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- CNEOGBIICRAWOH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo] CNEOGBIICRAWOH-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- WUJISAYEUPRJOG-UHFFFAOYSA-N molybdenum vanadium Chemical compound [V].[Mo] WUJISAYEUPRJOG-UHFFFAOYSA-N 0.000 description 1
- ABLLXXOPOBEPIU-UHFFFAOYSA-N niobium vanadium Chemical compound [V].[Nb] ABLLXXOPOBEPIU-UHFFFAOYSA-N 0.000 description 1
- GFUGMBIZUXZOAF-UHFFFAOYSA-N niobium zirconium Chemical compound [Zr].[Nb] GFUGMBIZUXZOAF-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- GFNGCDBZVSLSFT-UHFFFAOYSA-N titanium vanadium Chemical compound [Ti].[V] GFNGCDBZVSLSFT-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
Definitions
- the present disclosure relates to a cubic boron nitride sintered body.
- a cubic boron nitride sintered body (hereinafter also referred to as "cBN sintered body") is known as a high-hardness material used for cutting tools (Patent Documents 1 and 2).
- the present disclosure is a cubic boron nitride sintered body comprising cubic boron nitride particles and a binder,
- the content of the cubic boron nitride particles in the cubic boron nitride sintered body is 30% by volume or more and 80% by volume or less
- the binder is A simple substance of one element selected from Group 1 consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, iron, cobalt and nickel of the periodic table, and selected from the first group containing at least one element selected from the second group consisting of alloys and intermetallic compounds consisting of two or more elements, or from one element selected from the first group and nitrogen, carbon, boron and oxygen At least one selected from the fourth group consisting of a compound consisting of at least one element selected from the third group consisting of, and a solid solution of the compound,
- the cubic boron nitride sintered body has a void content of 0.001% by volume or more and 0.20% by volume
- FIG. 1 is a backscattered electron image of a cubic boron nitride sintered body according to Embodiment 1.
- FIG. 1 is a backscattered electron image of a cubic boron nitride sintered body according to Embodiment 1.
- an object of the present disclosure is to provide a cubic boron nitride sintered body that can have a long tool life even in high-efficiency machining when used as a tool material.
- the present disclosure is a cubic boron nitride sintered body comprising cubic boron nitride particles and a binder,
- the content of the cubic boron nitride particles in the cubic boron nitride sintered body is 30% by volume or more and 80% by volume or less
- the binder is A simple substance of one element selected from Group 1 consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, iron, cobalt and nickel of the periodic table, and selected from the first group containing at least one element selected from the second group consisting of alloys and intermetallic compounds consisting of two or more elements, or from one element selected from the first group and nitrogen, carbon, boron and oxygen At least one selected from the fourth group consisting of a compound consisting of at least one element selected from the third group consisting of, and a solid solution of the compound,
- the tool can have a long tool life even in high-efficiency machining.
- the average equivalent circle diameter of the voids is preferably 3 nm or more and 60 nm or less. According to this, the tool life is further improved.
- the cubic boron nitride sintered body includes a plurality of the voids, It is preferable that the average distance of the voids is 1.5 ⁇ m or more and 15 ⁇ m or less. According to this, the tool life is further improved.
- the content of the cubic boron nitride particles in the cubic boron nitride sintered body is preferably 40% by volume or more and 75% by volume or less. According to this, the tool life is further improved.
- a compound or the like when represented by a chemical formula, it shall include any conventionally known atomic ratio unless the atomic ratio is particularly limited, and should not necessarily be limited only to those within the stoichiometric range.
- TiAlN when “TiAlN" is described, the ratio of the number of atoms constituting TiAlN includes all conventionally known atomic ratios.
- a cubic boron nitride sintered body of one embodiment of the present disclosure (hereinafter also referred to as "this embodiment") is a cubic boron nitride sintered body comprising cubic boron nitride particles and a binder.
- the content of the cubic boron nitride particles in the cubic boron nitride sintered body is 30% by volume or more and 80% by volume or less
- the binder is A simple substance of one element selected from Group 1 consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, iron, cobalt and nickel of the periodic table, and selected from the first group containing at least one element selected from the second group consisting of alloys and intermetallic compounds consisting of two or more elements, or from one element selected from the first group and nitrogen, carbon, boron and oxygen At least one selected from the fourth group consisting of a compound consisting of at least one element selected from the third group consisting of, and a solid solution of the compound,
- the cubic boron nitride sintered body has a void content of 0.001% by volume or more and 0.20% by volume or less, and is a cubic boron nitride sintered body.
- the tool can have a long tool life even in high-efficiency machining.
- the reason for this is presumed to be as follows (i) to (iii).
- the cubic boron nitride sintered body of the present embodiment contains 30% by volume or more and 80% by volume or less of cubic boron nitride particles having excellent strength and toughness. Therefore, the cubic boron nitride sintered body can also have excellent strength and toughness. Therefore, the cubic boron nitride sintered body has excellent wear resistance and chipping resistance, and a tool using the cubic boron nitride sintered body can have a long tool life.
- the binding material contained in the cubic boron nitride sintered body of the present embodiment has a particularly high binding force to the cubic boron nitride particles. Therefore, the cubic boron nitride sintered body has excellent wear resistance and chipping resistance, and a tool using the cubic boron nitride sintered body can have a long tool life.
- the tool using the cubic boron nitride sintered body of the present embodiment which has a void content of 0.001% by volume or more and 0.20% by volume or less, has excellent chipping resistance and a long tool life. can be done. This is a finding newly discovered by the present inventors as a result of extensive studies.
- the cubic boron nitride sintered body of the present embodiment includes 30% by volume or more and 80% by volume or less of cubic boron nitride particles and a binder.
- the cubic boron nitride sintered body of the present embodiment can consist of cubic boron nitride particles and a binder.
- the cubic boron nitride sintered body may contain unavoidable impurities resulting from the raw materials used, manufacturing conditions, and the like.
- the content (% by mass) of unavoidable impurities in the cubic boron nitride sintered body can be 1% by mass or less.
- the cubic boron nitride sintered body of the present embodiment can consist of cubic boron nitride particles, a binder, and unavoidable impurities.
- the lower limit of the content of cubic boron nitride particles in the cubic boron nitride sintered body is 30% by volume or more, preferably 40% by volume or more, and more preferably 50% by volume or more.
- the upper limit of the content of cubic boron nitride particles in the cubic boron nitride sintered body is 80% by volume or less, preferably 78% by volume or less, and 75% by volume or less, from the viewpoint of improving wear resistance and chipping resistance. is preferred.
- the content of cubic boron nitride particles in the cubic boron nitride sintered body is 30% by volume or more and 80% by volume or less, preferably 40% by volume or more and 78% by volume or less, and further 50% by volume or more and 75% by volume or less. preferable.
- the void content of the cubic boron nitride sintered body is 0.001% by volume or more and 0.20% by volume or less.
- the lower limit of the void content of the cubic boron nitride sintered body is 0.001% by volume or more from the viewpoint of obtaining the effect of absorbing the difference in thermal expansion coefficient between the cubic boron nitride particles and the binder. 01 volume % or more is preferable, and 0.03 volume % or more is preferable.
- the upper limit of the content of voids in the cubic boron nitride sintered body is 0.20% by volume or less, preferably 0.11% by volume or less, from the viewpoint of suppressing the voids from becoming crack starting points. 0.09% by volume or less is preferred.
- the void content of the cubic boron nitride sintered body is 0.001% by volume or more and 0.20% by volume or less, preferably 0.01% by volume or more and 0.11% by volume or less, and 0.03% by volume or more. 0.09% by volume or less is preferable.
- the volume of the entire cubic boron nitride sintered body of the present embodiment can be the total volume of the cubic boron nitride particles, the binder, and the voids. Therefore, the content rate (% by volume) of the binder in the cubic boron nitride sintered body is the content rate (% by volume) of the above cubic boron nitride particles from the entire cubic boron nitride sintered body (100% by volume). and a value obtained by subtracting the above void content (% by volume). For example, when the content of cubic boron nitride particles is 70% by volume and the content of voids is 0.01% by volume, the content of binder is 29.99% by volume.
- the content of cubic boron nitride particles (% by volume), the content of voids (% by volume), and the content of binder (% by volume) of the cubic boron nitride sintered body are measured by the following methods.
- (A1) Cut an arbitrary position of the cubic boron nitride sintered body to prepare a sample including a cross section of the cubic boron nitride sintered body.
- a focused ion beam device, a cross-section polisher device, or the like is used to prepare the cross section.
- FIG. 1 A backscattered electron image of the cubic boron nitride sintered body of this embodiment is shown in FIG.
- the black area indicated by reference numeral 1 corresponds to the void.
- the dark gray area indicated by reference numeral 2 corresponds to the cubic boron nitride particles, and the light gray area or white area indicated by reference numeral 3 corresponds to the binder.
- the backscattered electron image is subjected to first binarization processing using image analysis software ("WinROOF" by Mitani Shoji Co., Ltd.).
- the image brightness value is divided into 256 (low brightness: 0, high brightness: 255), and the brightness of the region where the voids specified above exists is The value is set to be within the range of 0 to 30, and the brightness value of the region where the cubic boron nitride particles are present is set to be greater than 30. This makes it possible to extract regions where voids exist.
- a measurement area of 12 ⁇ m ⁇ 9 ⁇ m is arbitrarily set in the image after the first binarization process.
- the area ratio of the area where voids are present is calculated.
- the calculated area ratio as volume %, the void content (volume %) of the cubic boron nitride sintered body can be obtained.
- the backscattered electron image is subjected to a second binarization process using the image analysis software under conditions preset in the image analysis software.
- the image after the second binarization process pixels derived from the bright field indicate areas where the binder exists. That is, it is possible to extract the region where the binder exists by the second binarization processing.
- a measurement area of 12 ⁇ m ⁇ 9 ⁇ m is set in the image after the second binarization process. In the measurement area, the area ratio of the area where the binder exists is calculated. By regarding the calculated area ratio as volume %, the binder content (volume %) of the cubic boron nitride sintered body can be obtained.
- the above (A1) to (E1) are performed in 10 different measurement areas, and in each measurement area, the content of cubic boron nitride particles (% by volume), the content of voids (% by volume) and the content of binder ( volume %) is measured.
- the average of the cubic boron nitride particle content (% by volume) of the ten measurement regions is taken as the cubic boron nitride particle content (% by volume) of the cubic boron nitride sintered body of the present embodiment.
- the average of the void content (% by volume) of the ten measurement regions is taken as the void content (% by volume) of the cubic boron nitride sintered body of the present embodiment.
- the average content rate (% by volume) of the binder in the ten measurement regions is defined as the content rate (% by volume) of the binder in the cubic boron nitride sintered body of the present embodiment.
- the average equivalent circle diameter of the voids is preferably 3 nm or more and 60 nm or less. According to this, the tool life is further improved. The reason for this is presumed to be that the number of voids present in the cubic boron nitride sintered body is increased, and the occurrence of cracks is more effectively suppressed.
- the lower limit of the equivalent circle diameter of the voids is preferably 3 nm or more, preferably 3.5 nm or more, preferably 4 nm or more, from the viewpoint of improving the effect of absorbing the difference in thermal expansion coefficient between the cubic boron nitride particles and the binder. 5 nm or more is preferable, and 10 nm or more is preferable. From the viewpoint of increasing the number of voids, the upper limit of the equivalent circle diameter of the voids is preferably 60 nm or less, preferably 55 nm or less, and preferably 50 nm or less.
- the equivalent circle diameter of the void is preferably 3 nm or more and 60 nm or less, preferably 3 nm or more and 55 nm or less, preferably 3 nm or more and 50 nm or less, preferably 3.5 nm or more and 60 nm or less, preferably 3.5 nm or more and 55 nm or less, and 3.5 nm or more.
- 50 nm or less is preferable, 4 nm or more and 60 nm or less is preferable, 4 nm or more and 55 nm or less is preferable, 4 nm or more and 50 nm or less is preferable, 5 nm or more and 60 nm or less is preferable, 5 nm or more and 55 nm or less is preferable, 5 nm or more and 50 nm or less is preferable, 10 nm or more and 60 nm or less is preferable.
- the following is preferable, 10 nm or more and 55 nm or less is preferable, and 10 nm or more and 50 nm or less is preferable.
- the equivalent circle diameter of voids means the equivalent circle diameter of voids observed in the cross section of the cubic boron nitride sintered body.
- the equivalent circle diameter of the void is measured by the following method. First, in the same procedure as (A1) to (C1) of the method for measuring the void content of the cubic boron nitride sintered body, a backscattered electron image and secondary electrons of the cross section of the cubic boron nitride sintered body By comparing the backscattered electron image with the image, a region where voids exist (hereinafter also referred to as "void region”) is specified in the backscattered electron image, and the backscattered electron image is further subjected to the first binarization process.
- void region a region where voids exist
- a measurement area (12 ⁇ m ⁇ 9 ⁇ m) is set in the image after binarization.
- the equivalent circle diameter (diameter of circle with equal area) of each void area is calculated using the image processing software.
- the void region is regarded as one and the equivalent circle diameter is calculated.
- the average of the equivalent circle diameters of all void regions in the measurement region is taken as the equivalent circle diameter of the voids in the measurement region.
- the average equivalent circle diameter means the number-based arithmetic mean diameter of the equivalent circle diameters.
- the equivalent circle diameter of the one void is regarded as the average of the equivalent circle diameters.
- the average equivalent circle diameter is measured in ten different measurement areas.
- the average of the measured values of the 10 measurement regions is taken as the average circle-equivalent diameter of the voids in the cubic boron nitride sintered body of this embodiment.
- the cubic boron nitride sintered body of the present embodiment includes a plurality of voids, and the average distance between the voids is preferably 1.5 ⁇ m or more and 15 ⁇ m or less. According to this, the tool life is further improved. The reason for this is presumed to be that voids are distributed in the cubic boron nitride sintered body, and the generation of cracks is suppressed substantially uniformly over the entire area of the cubic boron nitride sintered body.
- the lower limit of the gap distance is preferably 1.5 ⁇ m or more, preferably 3 ⁇ m or more, and preferably 5 ⁇ m or more, from the viewpoint of improving the dispersibility of the gaps.
- the upper limit of the distance of the void is preferably 15 ⁇ m or less, preferably 14 ⁇ m or less, and preferably 13 ⁇ m or less, from the viewpoint of obtaining the effect of suppressing crack generation.
- the distance of the gap is preferably 1.5 ⁇ m or more and 15 ⁇ m or less, more preferably 3 ⁇ m or more and 14 ⁇ m or less, and even more preferably 5 ⁇ m or more and 13 ⁇ m or less.
- the distance of the gap is measured by the following method.
- a backscattered electron image and a secondary electron image of the cross section of the cubic boron nitride sintered body are obtained in the same procedure as (A1) to (C1) of the method for measuring the void content of the cubic boron nitride sintered body.
- void region a region where voids exist in the backscattered electron image
- the backscattered electron image is subjected to the first binarization process. , to extract void regions.
- a measurement area (12 ⁇ m ⁇ 9 ⁇ m) is set in the image after binarization.
- the image processing software is used to derive the position of the center of gravity of each void area.
- the obtained barycentric coordinates are regarded as generating points, and Voronoi division processing is performed to calculate each Voronoi region.
- first Voronoi region a Voronoi region adjacent to the first Voronoi region
- second Voronoi region a Voronoi region adjacent to the first Voronoi region
- the length of a line segment connecting the barycentric coordinates of generating points calculate the Let the length of the line segment be the distance between the first Voronoi region and the second Voronoi region.
- the length of the line segment is calculated for the first Voronoi region and each of the plurality of Voronoi regions adjoining thereto.
- the lengths of the above line segments between adjacent Voronoi regions are calculated in a similar manner.
- the average length of the line segments between all Voronoi regions in the measurement field is taken as the average distance of the gaps in the measurement region. Measurements of the average distance of the air gap are made in ten different measurement areas.
- the average of the measured values of ten measurement regions is taken as the average of the distances of voids in the cubic boron nitride sintered body of this embodiment.
- Cubic boron nitride particles have high hardness, strength and toughness, and play a role as a skeleton in the cubic boron nitride sintered body.
- the average particle size (equivalent circle diameter D50) of the cubic boron nitride particles is preferably 0.4 ⁇ m or more and 10 ⁇ m or less, more preferably 0.5 ⁇ m or more and 6 ⁇ m or less.
- the average particle size of cubic boron nitride particles is measured by the following method.
- the void region and the region where the binder exists in the backscattered electron image (hereinafter , Also referred to as a “binder region”) is extracted, and the region excluding the void region and the binder region from the entire region is the region where the cubic boron nitride particles are present (hereinafter also referred to as the “cubic boron nitride particle region” ).
- a measurement area (12 ⁇ m ⁇ 9 ⁇ m) is set in the image after binarization.
- the equivalent circle diameter of each cubic boron nitride particle area is calculated.
- the average of the equivalent circle diameters of all the cubic boron nitride particle regions within the measurement region is taken as the average particle diameter of the cubic boron nitride particles in the measurement region.
- the average of the equivalent circle diameters means the median diameter D50 of the equivalent circle diameters (the equivalent circle diameter at which the cumulative number-based frequency is 50%). Measurements of the average particle size are carried out in ten different measurement areas.
- the average of the measured values of the 10 measurement regions is taken as the average particle size of the cubic boron nitride particles in the cubic boron nitride sintered body of this embodiment.
- the binder plays the role of enabling sintering of cubic boron nitride particles, which is a difficult-to-sinter material, at industrial-level pressure and temperature.
- the reactivity with iron is lower than that of cBN, it has the function of suppressing chemical wear and thermal wear in cutting high-hardness hardened steel.
- the cBN sintered body contains a binder, wear resistance in high-efficiency machining of high-hardness hardened steel is improved.
- the binder is Elements of one element selected from Group 1 consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, iron, cobalt and nickel of the periodic table, and selected from the first group containing at least one element selected from the second group consisting of alloys and intermetallic compounds consisting of two or more elements, or from one element selected from the first group and nitrogen, carbon, boron and oxygen At least one element selected from the fourth group consisting of a compound consisting of at least one element selected from the third group and a solid solution of the compound. That is, the binder can be in any one of the following forms (a) to (f).
- the Group 4 elements of the periodic table include, for example, titanium (Ti), zirconium (Zr) and hafnium (Hf).
- Group 5 elements include, for example, vanadium (V), niobium (Nb) and tantalum (Ta).
- Group 6 elements include, for example, chromium (Cr), molybdenum (Mo) and tungsten (W).
- first elements elements included in the first group consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, iron, cobalt and nickel are also referred to as "first elements”.
- alloys of the first element include Ti--Zr, Ti--Hf, Ti--V, Ti--Nb, Ti--Ta, Ti--Cr and Ti--Mo.
- intermetallic compound of the first element include TiCr 2 , Ti 3 Al, and Co—Al.
- Examples of the compound (nitride) containing the first element and nitrogen include titanium nitride (TiN), zirconium nitride (ZrN), hafnium nitride (HfN), vanadium nitride (VN), niobium nitride (NbN), Tantalum nitride (TaN), chromium nitride ( Cr2N ), molybdenum nitride (MoN), tungsten nitride (WN), aluminum nitride (AlN), silicon nitride ( Si3N4 ), cobalt nitride ( CoN ), nickel nitride ( NiN), titanium zirconium nitride (TiZrN), titanium hafnium nitride (TiHfN), titanium vanadium nitride (TiVN), titanium niobium nitride (TiNbN), titanium tant
- Examples of the compound (carbide) containing the first element and carbon include titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), vanadium carbide (VC), niobium carbide (NbC), carbide Mention may be made of tantalum (TaC), chromium carbide (Cr 3 C 2 ), molybdenum carbide (MoC), tungsten carbide (WC), silicon carbide (SiC), tungsten carbide-cobalt (W 2 Co 3 C).
- Examples of the compound (boride) containing the first element and boron include titanium boride (TiB 2 ), zirconium boride (ZrB 2 ), hafnium boride (HfB 2 ), vanadium boride (VB 2 ), niobium boride (NbB 2 ), tantalum boride (TaB 2 ), chromium boride (CrB), molybdenum boride (MoB), tungsten boride (WB), aluminum boride (AlB 2 ), cobalt boride (Co 2 B), nickel boride (Ni 2 B).
- Examples of the compound (oxide) containing the first element and oxygen include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ), vanadium oxide (V 2 O 5 ), niobium oxide ( Nb2O5 ), tantalum oxide ( Ta2O5 ), chromium oxide ( Cr2O3 ), molybdenum oxide ( MoO3 ), tungsten oxide ( WO3 ), aluminum oxide ( Al2O3 ), Mention may be made of silicon oxide (SiO 2 ), cobalt oxide (CoO), nickel oxide (NiO).
- Examples of the compound (carbonitride) containing the first element, carbon, and nitrogen include titanium carbonitride (TiCN), zirconium carbonitride (ZrCN), hafnium carbonitride (HfCN), and titanium niobium carbonitride (TiNbCN). , titanium zirconium carbonitride (TiZrCN), titanium hafnium carbonitride (TiHfCN), titanium tantalum carbonitride (TiTaCN), titanium chromium carbonitride (TiCrCN).
- Examples of the compound (oxynitride) composed of the first element, oxygen, and nitrogen include titanium oxynitride (TiON), zirconium oxynitride (ZrON), hafnium oxynitride (HfON), and vanadium oxynitride (VON).
- TiON titanium oxynitride
- ZrON zirconium oxynitride
- HfON hafnium oxynitride
- VON vanadium oxynitride
- niobium oxynitride (NbON), tantalum oxynitride (TaON), chromium oxynitride (CrON), molybdenum oxynitride (MoON), tungsten oxynitride (WON), aluminum oxynitride (AlON), silicon oxynitride (SiAlON) can be mentioned.
- a solid solution of the above compounds means a state in which two or more of these compounds are dissolved in each other's crystal structure, and means an interstitial solid solution or a substitutional solid solution.
- the above compounds may be used singly or in combination of two or more.
- the lower limit of the total content of at least one binder selected from the second group and at least one binder selected from the fourth group is 50 % by volume or more is preferable, 60% by volume or more is more preferable, and 70% by volume or more is even more preferable.
- the upper limit of the total content of the second group and the fourth group of binders is preferably 80% by volume or less, more preferably 90% by volume or less, and most preferably 100% by volume.
- the total content of the second group and the fourth group of binders is preferably 50% by volume or more and 80% by volume or less, more preferably 60% by volume or more and 90% by volume or less, and even more preferably 70% by volume or more and 100% by volume or less.
- the total content of the second group and the fourth group of binders is measured by the RIR method (Reference Intensity Ratio) by XRD.
- the binding material may contain other components in addition to the second group and fourth group described above.
- Manganese (Mn) and rhenium (Re) can be given as examples of elements constituting other components.
- composition of the binder contained in the cBN sintered body can be specified by XRD (X-ray diffraction).
- the cubic boron nitride sintered body of the present disclosure is suitable for use in cutting tools, wear-resistant tools, grinding tools, and the like.
- the cutting tool, wear-resistant tool, and grinding tool using the cubic boron nitride sintered body of the present disclosure may each be entirely composed of the cubic boron nitride sintered body, or a part thereof (for example, a cutting tool In the case of , only the cutting edge portion) may be composed of a cubic boron nitride sintered body. Furthermore, a coating film may be formed on the surface of each tool.
- Cutting tools include drills, end mills, indexable cutting inserts for drills, indexable cutting inserts for end mills, indexable cutting inserts for milling, indexable cutting inserts for turning, metal saws, gear cutting tools, reamers. , taps, and cutting tools.
- Wear-resistant tools include dies, scribers, scribing wheels, and dressers. Grinding tools include grinding wheels.
- the cubic boron nitride sintered body of the present disclosure can be produced, for example, by the following method.
- cBN powder cubic boron nitride powder
- binder raw material powder a cubic boron nitride powder
- the cBN powder is raw material powder of cubic boron nitride particles (hereinafter also referred to as “cBN particles”) contained in the cBN sintered body.
- the cBN powder is not particularly limited, and known cBN powder can be used. Among them, the cBN powder was obtained by converting hexagonal boron nitride powder into cubic boron nitride powder by keeping it within the thermodynamic stability region of cubic boron nitride in the presence of catalyst LiCaBN . It is preferable to be
- the D50 (average particle diameter) of the cBN powder is not particularly limited, and can be, for example, 0.1 to 12.0 ⁇ m.
- the cBN powder is coated with a binder component.
- a binder component such as TiN, TiAlN, Al or Al 2 O 3
- the void content of the cubic boron nitride sintered body is reduced. It is presumed that this is because the voids between the cubic boron nitride particles are easily filled during sintering.
- the coating may be provided on the entire surface of the cBN powder. Further, the coating may be provided on at least part of the surface of the cBN powder.
- the film thickness of the coating is preferably 0.15 ⁇ m or more and 0.25 m or less, for example. According to this, the void content of the cubic boron nitride sintered body is further reduced. The film thickness of the coating is measured by SEM-EDX of the cross section of the powder.
- the binder raw material powder is the raw material powder of the binder contained in the cBN sintered body.
- the binder raw material powder can have the same composition as at least part of the components constituting the binder.
- As the raw material powder of the binder at least one element selected from the group consisting of the elements of Group 4, Group 5, Group 6 of the periodic table, aluminum, silicon, cobalt and nickel, or the element itself and at least one element selected from the group consisting of nitrogen, carbon, boron and oxygen.
- powders made of various compounds described as binders in Embodiment 1 can be used as binder raw material powders.
- TiN powder ZrN powder, W2N powder, VN powder, Ni powder, Si3N4 powder, TiCN powder, TaN powder, NbN powder, Mo2N powder, HfN powder, Cr2N powder etc.
- the binder raw material powder is not particularly limited, and can be prepared by a conventionally known method.
- the binder raw material powder prepared above is mixed and pulverized (hereinafter also referred to as “primary mixing”).
- the primary mixing method is not particularly limited, for example, a ball mill or jet mill can be used. Each mixing and pulverizing method may be wet or dry.
- the mixing time for the primary mixing can be, for example, 10 hours or more and 15 hours or less in the case of a ball mill. In the case of a jet mill, for example, it can be 1 hour or more and 2 hours or less.
- the binder raw material powder pulverized by primary mixing is dispersed in a solvent such as ethanol or acetone to obtain a dispersion.
- the cBN powder prepared above is added to the dispersion and mixed to obtain a mixed powder (hereinafter also referred to as “secondary mixing”).
- the secondary mixing method is not particularly limited, but for example, a ball mill or jet mill can be used.
- the mixing time for the secondary mixing can be, for example, 10 hours or more and 15 hours or less in the case of a ball mill. In the case of a jet mill, for example, it can be 1 hour or more and 2 hours or less.
- the solvent is removed by air drying after mixing. Thereafter, a heat treatment is performed to volatilize impurities such as moisture adsorbed on the surface of the mixed powder, thereby cleaning the surface of the mixed powder.
- the binder raw material powder and the cBN powder were dispersed and mixed in a solvent from the beginning. Therefore, the mixing time of the cBN powder is long (for example, 20 hours or more and 30 hours or less with a ball mill, and more than 2 hours and 4 hours or less with a jet mill), and strain is easily introduced into the cBN powder. Strain in cBN powder contributes to voids in cubic boron nitride sintered bodies.
- the mixing step of the present embodiment includes primary mixing in which only the binder raw material powder is mixed and pulverized, and secondary mixing in which the cBN powder is added to the dispersion of the binder raw material powder after the primary mixing and mixed. including.
- primary mixing in which only the binder raw material powder is mixed and pulverized
- secondary mixing in which the cBN powder is added to the dispersion of the binder raw material powder after the primary mixing and mixed.
- the mixed powder is filled in a Ta (tantalum) container while being in contact with a WC-6% Co cemented carbide disk and a Co (cobalt) foil, and vacuum-sealed.
- the mixed powder filled in the Ta container is pressurized to a pressure of 5 GPa or more and 7 GPa or less using a belt-type ultrahigh pressure and high temperature generator, and then heated to a temperature of 1300 ° C. or more and 1500 ° C. or less. and temperature conditions for 15 minutes to 30 minutes for sintering. Thereby, the cubic boron nitride sintered body of the present embodiment is produced.
- the present inventors have newly discovered that the lower the pressure after pressurization, the lower the void content of the cubic boron nitride sintered body. It is presumed that this is because when the pressure after pressurization is low, the cBN powder is less likely to be crushed. In addition, the inventors have newly found that the void content decreases when the temperature after heating is high. This is presumed to be due to grain growth when the temperature after heating is high. Therefore, the void content of the cubic boron nitride sintered body can be reduced to a desired range by appropriately adjusting the pressure and temperature conditions after heating and pressurization.
- the above sintering process can also be performed by dividing the heating and pressurizing process into two stages. Specifically, the mixed powder filled in the Ta container is pressurized (primary pressure) to a primary pressure of 2 GPa or more and 4 GPa or less, and then heated to a primary temperature of 500 ° C. or more and 1000 ° C. or less (1 secondary heating), and held for 3 minutes or more and 30 minutes or less under the pressure and temperature conditions after heating and pressurization (primary holding). Subsequently, after pressurizing from the pressure to a secondary pressure of 5 GPa or higher and 7 GPa or lower (secondary pressure), the secondary temperature is heated to 1300 ° C. or higher and 1500 ° C.
- the present inventors have newly found that the void content of the cubic boron nitride sintered body is reduced by performing the pressurizing and heating process in two stages. It is presumed that this is because by dividing the pressurization process into two stages, the amount of increase in pressure applied to the cBN powder in each of the primary pressurization and the secondary pressurization is reduced, and the cBN powder is less likely to be crushed. be. Conventionally, the heating and pressurizing process was not performed in two stages due to the inconvenience of an increase in manufacturing time.
- the cubic boron nitride sintered body of the present embodiment is composed of 30% by volume or more and 80% by volume or less of cubic boron nitride particles, 0.01% by volume or more and 0.20% by volume or less of voids, and the balance of a binder. is preferred.
- the cubic boron nitride sintered body of the present embodiment includes 30% by volume or more and 80% by volume or less of cubic boron nitride particles, 0.01% by volume or more and 0.20% by volume or less of voids, and 19.8% by volume or more and 69 It is preferable to consist of a binder of 0.99% by volume or less.
- the cubic boron nitride sintered body of the present embodiment is composed of 40% by volume or more and 78% by volume or less of cubic boron nitride particles, 0.01% by volume or more and 0.11% by volume or less of voids, and the balance of a binder. is preferred.
- the cubic boron nitride sintered body of the present embodiment includes cubic boron nitride particles of 40% by volume or more and 78% by volume or less, voids of 0.01% by volume or more and 0.11% by volume or less, and 21.89% by volume or more and 59 It is preferable to consist of a binder of 0.99% by volume or less.
- the cubic boron nitride sintered body of the present embodiment is composed of 50% by volume or more and 75% by volume or less of cubic boron nitride particles, 0.03% by volume or more and 0.09% by volume or less of voids, and the balance of a binder. is preferred.
- the cubic boron nitride sintered body of the present embodiment includes 50% by volume or more and 75% by volume or less of cubic boron nitride particles, 0.03% by volume or more and 0.09% by volume or less of voids, and 24.91% by volume or more and 49 0.94% by volume or less is preferred.
- the cubic boron nitride powder described in the "cBN powder No.” Got ready.
- the raw material powder for the binder at least one element selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, aluminum, silicon, cobalt and nickel of the periodic table, and nitrogen, carbon and boron. and at least one element selected from the group consisting of oxygen.
- the compound was used alone or in combination of two or more.
- the average particle size of each binder material powder is 1 ⁇ m.
- the amounts of the cBN powder and the binder material powder were adjusted so that the content of cBN particles in the cubic boron nitride sintered body to be produced was the percentage described in the "cBN particles [volume %]" column of Table 3. .
- the binder raw material powder pulverized by primary mixing was dispersed in ethanol to obtain a dispersion liquid.
- the cBN powder prepared above is added to the dispersion and mixed by the method described in the "mixing method” column in Table 2 for the time described in the "secondary mixing [hr]” column to obtain a mixed powder. obtained (“secondary mixture”).
- the solvent was then removed by air drying.
- the binder raw material powder was mixed and pulverized in a ball mill for 12 hours (primary mixing).
- the binder raw material powder was dispersed in ethanol to obtain a dispersion, and cBN powder was added to the dispersion and mixed for 12 hours in a ball mill to obtain a mixed powder (secondary mixing).
- the solvent was then removed by air drying.
- the mixed powder is filled in a Ta (tantalum) container while being in contact with a WC-6% Co cemented carbide disk and a Co (cobalt) foil, and vacuum-sealed.
- the mixed powder filled in the Ta container is pressurized to the pressure described in the "sintering pressure [GPa]” column of Table 2 using a belt-type ultrahigh pressure and high temperature generator, and then "sintering temperature [°C ]” column, and sintered for the time described in the “sintering time [min]” column under the pressure and temperature conditions after pressurized heating to form a cubic boron nitride sintered body. Obtained.
- the mixed powder is pressurized to 7 GPa using a belt-type ultrahigh pressure and high temperature generator, heated to 1500 ° C., held at the pressure temperature for 15 minutes and sintered to cubic nitriding. A boron sintered body was obtained.
- the “remainder” in the “Binder [vol%]” column is the cBN grain content (vol%) and void content (vol%) subtracted from the entire cubic boron nitride sintered body (100vol%). The remainder is the binder content.
- a cutting tool (base material shape: CNGA120408) was produced using the cBN sintered body of each produced sample. Using this, a cutting test was carried out under the following cutting conditions. The following cutting conditions apply to cutting sintered alloys. Work material: Carburized SCM415 (HRC60) round bar with a diameter of 100 mm Cutting speed: 150 m/min. Feeding speed: 0.15 mm/rev. Notch: 0.5mm Coolant: WET Cutting method: Outer diameter continuous cutting Evaluation method: Calculate the cutting distance (km) until chipping. A longer cutting distance indicates better chipping resistance and longer tool life. The results are shown in the "cutting test" column of Table 3.
- the binder raw material powder pulverized by primary mixing was dispersed in ethanol to obtain a dispersion liquid.
- the cBN powder prepared above is added to the dispersion and mixed by the method described in the "mixing method” column in Table 4 for the time described in the "secondary mixing [hr]” column to obtain a mixed powder. obtained (“secondary mixture”).
- the solvent was then removed by air drying.
- the binder raw material powder was mixed and pulverized in a ball mill for 12 hours (primary mixing).
- the binder raw material powder was dispersed in ethanol to obtain a dispersion, and cBN powder was added to the dispersion and mixed for 24 hours in a ball mill to obtain a mixed powder (secondary mixing).
- the solvent was then removed by air drying.
- the mixed powder is filled in a Ta (tantalum) container while being in contact with a WC-6% Co cemented carbide disk and a Co (cobalt) foil, and vacuum-sealed.
- the mixed powder filled in the Ta container was pressurized (primary pressurization) using a belt-type ultrahigh pressure and high temperature generator to the pressure described in the "primary pressure [GPa]” column of Table 4, It was heated to the temperature described in the "primary temperature [°C]” column (primary heating), and was held for the time described in the "primary retention time [min]” column under the pressure and temperature conditions after pressurized heating ( primary retention).
- the mixed powder was pressurized to 3 GPa (primary pressurization) using a belt-type ultrahigh pressure and high temperature generator, and then heated to 1000 ° C. (primary heating). minutes (primary hold). Subsequently, after pressurizing to 5 GPa (secondary pressure), heating to 1300 ° C. (secondary heating) and holding at this pressure temperature for 15 minutes (secondary holding), a cubic boron nitride sintered body was obtained. Obtained.
- Binder [% by volume] refers to the content of cBN particles (% by volume) and the content of voids (% by volume) subtracted from the entire cubic boron nitride sintered body (100% by volume). The remainder is the binder content.
Abstract
Description
前記立方晶窒化硼素焼結体の前記立方晶窒化硼素粒子の含有率は、30体積%以上80体積%以下であり、
前記結合材は、
周期表の第4族元素、第5族元素、第6族元素、アルミニウム、珪素、鉄、コバルト及びニッケルからなる第1群より選ばれる1種の元素の単体、並びに、前記第1群より選ばれる2種以上の元素からなる合金及び金属間化合物、からなる第2群より選ばれる少なくとも1種を含み、又は
前記第1群より選ばれる1種の元素と、窒素、炭素、硼素及び酸素からなる第3群より選ばれる少なくとも1種の元素とからなる化合物、及び、前記化合物の固溶体、からなる第4群より選ばれる少なくとも1種を含み、
前記立方晶窒化硼素焼結体の空隙の含有率は、0.001体積%以上0.20体積%以下である、立方晶窒化硼素焼結体である。
近年、高能率加工への要求が高まっている。立方晶窒化硼素を用いた工具で高能率加工を行った場合、欠損により工具寿命が短くなる場合がある。よって、工具材料として用いた場合、該工具が高能率加工においても長い工具寿命を有することができる立方晶窒化硼素焼結体が求められている。
本開示の立方晶窒化硼素焼結体を工具材料として用いた場合、該工具は高能率加工においても長い工具寿命を有することができる。
最初に本開示の実施態様を列記して説明する。
(1)本開示は、立方晶窒化硼素粒子と、結合材と、を備える立方晶窒化硼素焼結体であって、
前記立方晶窒化硼素焼結体の前記立方晶窒化硼素粒子の含有率は、30体積%以上80体積%以下であり、
前記結合材は、
周期表の第4族元素、第5族元素、第6族元素、アルミニウム、珪素、鉄、コバルト及びニッケルからなる第1群より選ばれる1種の元素の単体、並びに、前記第1群より選ばれる2種以上の元素からなる合金及び金属間化合物、からなる第2群より選ばれる少なくとも1種を含み、又は
前記第1群より選ばれる1種の元素と、窒素、炭素、硼素及び酸素からなる第3群より選ばれる少なくとも1種の元素とからなる化合物、及び、前記化合物の固溶体、からなる第4群より選ばれる少なくとも1種を含み、
前記立方晶窒化硼素焼結体の空隙の含有率は、0.001体積%以上0.20体積%以下である、立方晶窒化硼素焼結体である。
前記空隙間の距離の平均は、1.5μm以上15μm以下であることが好ましい。これによると、工具寿命が更に向上する。
本開示の立方晶窒化硼素焼結体の具体例を、以下に図面を参照しつつ説明する。本開示の図面において、同一の参照符号は、同一部分または相当部分を表すものである。
本開示の一実施形態(以下、「本実施形態」とも記す。)の立方晶窒化硼素焼結体は、立方晶窒化硼素粒子と、結合材と、を備える立方晶窒化硼素焼結体であって、
該立方晶窒化硼素焼結体の該立方晶窒化硼素粒子の含有率は、30体積%以上80体積%以下であり、
該結合材は、
周期表の第4族元素、第5族元素、第6族元素、アルミニウム、珪素、鉄、コバルト及びニッケルからなる第1群より選ばれる1種の元素の単体、並びに、前記第1群より選ばれる2種以上の元素からなる合金及び金属間化合物、からなる第2群より選ばれる少なくとも1種を含み、又は
前記第1群より選ばれる1種の元素と、窒素、炭素、硼素及び酸素からなる第3群より選ばれる少なくとも1種の元素とからなる化合物、及び、前記化合物の固溶体、からなる第4群より選ばれる少なくとも1種を含み、
該立方晶窒化硼素焼結体の空隙の含有率は、0.001体積%以上0.20体積%以下である、立方晶窒化硼素焼結体である。
本実施形態の立方晶窒化硼素焼結体は、30体積%以上80体積%以下の立方晶窒化硼素粒子と、結合材と、を備える。本実施形態の立方晶窒化硼素焼結体は、立方晶窒化硼素粒子と、結合材とからなることができる。なお立方晶窒化硼素焼結体は、使用する原材料、製造条件等に起因する不可避不純物を含み得る。立方晶窒化硼素焼結体の不可避不純物の含有率(質量%)は、1質量%以下とすることができる。本実施形態の立方晶窒化硼素焼結体は、立方晶窒化硼素粒子と、結合材と、不可避不純物とからなることができる。
本実施形態の立方晶窒化硼素焼結体において、空隙の円相当径の平均は、3nm以上60nm以下であることが好ましい。これによると、工具寿命が更に向上する。この理由は、立方晶窒化硼素焼結体中に存在する空隙の数が多くなり、亀裂の発生が更に効果的に抑制されるためと推察される。
本実施形態の立方晶窒化硼素焼結体は、複数の空隙を含み、空隙間の距離の平均は、1.5μm以上15μm以下が好ましい。これによると、工具寿命が更に向上する。この理由は、立方晶窒化硼素焼結体において空隙が分散して存在し、立方晶窒化硼素焼結体の全領域で略均一に亀裂の発生が抑制されるためと推察される。
立方晶窒化硼素粒子は、硬度、強度、靱性が高く、立方晶窒化硼素焼結体中の骨格としての役割を果たす。立方晶窒化硼素粒子の平均粒径(円相当径のD50)は、工具寿命向上の観点から、0.4μm以上10μm以下が好ましく、0.5μm以上6μm以下が更に好ましい。
結合材は、難焼結性材料である立方晶窒化硼素粒子を工業レベルの圧力温度で焼結可能とする役割を果たす。また、鉄との反応性がcBNより低いため、高硬度焼入鋼の切削において、化学的摩耗及び熱的摩耗を抑制する働きを付加する。また、cBN焼結体が結合材を含有すると、高硬度焼入鋼の高能率加工における耐摩耗性が向上する。
周期表の第4族元素、第5族元素、第6族元素、アルミニウム、珪素、鉄、コバルト及びニッケルからなる第1群より選ばれる1種の元素の単体、並びに、該第1群より選ばれる2種以上の元素からなる合金及び金属間化合物、からなる第2群より選ばれる少なくとも1種を含み、又は
該第1群より選ばれる1種の元素と、窒素、炭素、硼素及び酸素からなる第3群より選ばれる少なくとも1種の元素とからなる化合物、及び、該化合物の固溶体、からなる第4群より選ばれる少なくとも1種を含む。すなわち、結合材は、下記の(a)~(f)のいずれかの形態とすることができる。
(b)第2群より選ばれる少なくとも1種を含む。
(c)第4群より選ばれる少なくとも1種からなる。
(d)第4群より選ばれる少なくとも1種を含む。
(e)第2群より選ばれる少なくとも1種、並びに、第4群より選ばれる少なくとも1種からなる。
(f)第2群より選ばれる少なくとも1種、並びに、第4群より選ばれる少なくとも1種を含む。
本開示の立方晶窒化硼素焼結体は、切削工具、耐摩工具、研削工具などに用いることが好適である。
本開示の立方晶窒化硼素焼結体は、例えば、下記の方法で作製することができる。
まず、立方晶窒化硼素粉末(以下、「cBN粉末」ともいう。)と、結合材原料粉末とを準備する。
次に、上記で準備した結合材原料粉末を混合して粉砕する(以下、「1次混合」とも記す。)。1次混合の方法は特に制限されないが、例えば、ボールミル又はジェットミルを用いることができる。各混合、粉砕方法は、湿式でもよく乾式でもよい。1次混合の混合時間は、ボールミルの場合は、例えば、10時間以上15時間以下とすることができる。ジェットミルの場合は、例えば、1時間以上2時間以下とすることができる。
上記の混合粉末をWC-6%Coの超硬合金製円盤とCo(コバルト)箔とに接した状態で、Ta(タンタル)製の容器に充填して真空シールする。Ta製容器に充填された混合粉末を、ベルト型超高圧高温発生装置を用いて、圧力5GPa以上7GPa以下に加圧した後、温度1300℃以上1500℃以下に加熱し、加圧加熱後の圧力及び温度条件下で15分以上30分以下保持して焼結させる。これにより、本実施形態の立方晶窒化硼素焼結体が作製される。
本実施形態の立方晶窒化硼素焼結体は、30体積%以上80体積%以下の立方晶窒化硼素粒子、0.01体積%以上0.20体積%以下の空隙及び残部の結合材からなることが好ましい。
本実施形態の立方晶窒化硼素焼結体は、30体積%以上80体積%以下の立方晶窒化硼素粒子、0.01体積%以上0.20体積%以下の空隙及び19.8体積%以上69.99体積%以下の結合材からなることが好ましい。
本実施形態の立方晶窒化硼素焼結体は、40体積%以上78体積%以下の立方晶窒化硼素粒子、0.01体積%以上0.11体積%以下の空隙及び残部の結合材からなることが好ましい。
本実施形態の立方晶窒化硼素焼結体は、40体積%以上78体積%以下の立方晶窒化硼素粒子、0.01体積%以上0.11体積%以下の空隙及び21.89体積%以上59.99体積%以下の結合材からなることが好ましい。
本実施形態の立方晶窒化硼素焼結体は、50体積%以上75体積%以下の立方晶窒化硼素粒子、0.03体積%以上0.09体積%以下の空隙及び残部の結合材からなることが好ましい。
本実施形態の立方晶窒化硼素焼結体は、50体積%以上75体積%以下の立方晶窒化硼素粒子、0.03体積%以上0.09体積%以下の空隙及び24.91体積%以上49.94体積%以下であることが好ましい。
<立方晶窒化硼素焼結体の作製>
試料1~試料36、試料1-1~試料1-3の立方晶窒化硼素焼結体を以下の手順で作製した。
まず、平均粒径3μmの立方晶窒化硼素粉末を準備した。該立方晶窒化硼素粉末に対して、表1の「被膜形成方法」欄に記載の方法を用いて、表1の「被膜組成」欄に記載の組成及び表1の「膜厚[μm]」欄に記載の膜厚を有する被膜を形成して、No.A~Iの立方晶窒化硼素粉末を作製した。例えばNo.Bの立方晶窒化硼素粉末では、スパッタリングにより、膜厚0.1μmのTiN膜が形成されている。
次に、準備した結合材原料粉末を表2の「混合方法」欄に記載の方法で、「1次混合[hr]」欄に記載の時間混合して粉砕した(1次混合)。
上記の混合粉末をWC-6%Coの超硬合金製円盤とCo(コバルト)箔とに接した状態で、Ta(タンタル)製の容器に充填して真空シールする。Ta製容器に充填された混合粉末を、ベルト型超高圧高温発生装置を用いて、表2の「焼結圧力[GPa]」欄に記載の圧力まで加圧した後、「焼結温度[℃]」欄に記載の温度まで加熱し、加圧加熱後の圧力及び温度条件下で「焼結時間[min]」欄に記載の時間保持して焼結し、立方晶窒化硼素焼結体を得た。
得られた立方晶窒化硼素焼結体について、立方晶窒化硼素粒子の含有率(体積%)、結合材の含有率(体積%)及び空隙の含有率(体積%)、結合材組成、空隙の円相当径の平均並びに空隙間距離の平均を測定した。具体的な測定方法は実施形態1に示されているため、その説明は繰り返さない。結果を表3の「cBN粒子[体積%]」、「結合材[体積%]」、「結合材組成」、「空隙[体積%]」、「空隙円相当径平均[nm]」、「空隙間距離平均[μm]」欄に示す。「結合材[体積%]」欄の「残り」とは、立方晶窒化硼素焼結体全体(100体積%)からcBN粒子の含有率(体積%)及び空隙の含有率(体積%)を減じた残りが、結合材の含有率であることを意味する。
作製された各試料のcBN焼結体を用いて切削工具(基材形状:CNGA120408)を作製した。これを用いて、以下の切削条件下で切削試験を実施した。下記の切削条件は、焼結合金の切削に該当する。
被削材:浸炭材SCM415(HRC60)径100mmの丸棒
切削速度:150m/min.
送り速度:0.15mm/rev.
切込み:0.5mm
クーラント:WET
切削方法:外径連続切削
評価方法:欠損に至るまでの切削距離(km)を導出する。切削距離が長いほど、耐欠損性に優れ、工具寿命が長いことを示す。
結果を表3の「切削試験」欄に示す。
試料1~試料36の立方晶窒化硼素焼結体は実施例に該当し、試料1-1~試料1-3の立方晶窒化硼素焼結体は比較例に該当する。試料1~試料36(実施例)は、試料1-1~試料1-3(比較例)に比べて、工具寿命が長いことが確認された。
<立方晶窒化硼素焼結体の作製>
試料50~試料60の立方晶窒化硼素焼結体を以下の手順で作製した。
実施例1と同様の方法で、No.A~Iの立方晶窒化硼素粉末及び結合材原料粉末を準備した。cBN粉末及び結合材原料粉末の量を、作製される立方晶窒化硼素焼結体のcBN粒子の含有率が表5の「cBN粒子[体積%]」欄に記載の百分率となるように準備した。
次に、準備した結合材原料粉末を表4の「混合方法」欄に記載の方法で、「1次混合[hr]」欄に記載の時間混合して粉砕した(1次混合)。
上記の混合粉末をWC-6%Coの超硬合金製円盤とCo(コバルト)箔とに接した状態で、Ta(タンタル)製の容器に充填して真空シールする。Ta製容器に充填された混合粉末を、ベルト型超高圧高温発生装置を用いて、表4の「1次圧力[GPa]」欄に記載の圧力まで加圧した(1次加圧)後、「1次温度[℃]」欄に記載の温度まで加熱し(1次加熱)、加圧加熱後の圧力及び温度条件下で「1次保持時間[min]」欄に記載の時間保持した(1次保持)。続いて、表4の「2次圧力[GPa]」欄に記載の圧力まで加圧した(2次加圧)後、「2次温度[℃]」欄に記載の温度まで加熱(2次加熱)し、加圧加熱後の圧力及び温度条件下で「2次保持時間[min]」欄に記載の時間保持して(2次保持)、立方晶窒化硼素焼結体を得た。
得られた立方晶窒化硼素焼結体について、立方晶窒化硼素粒子の含有率(体積%)、結合材の含有率(体積%)及び空隙の含有率(体積%)、結合材組成、空隙の円相当径の平均並びに空隙間距離の平均を測定した。具体的な測定方法は実施形態1に示されているため、その説明は繰り返さない。結果を表5の「cBN粒子[体積%]」、「結合材[体積%]」、「結合材組成」、「空隙[体積%]」、「空隙円相当径平均[nm]」、「空隙間距離平均[μm]」欄に示す。「結合材[体積%]」欄の「残り」とは、立方晶窒化硼素焼結体全体(100体積%)からcBN粒子の含有率(体積%)及び空隙の含有率(体積%)を減じた残りが、結合材の含有率であることを意味する。
作製された各試料のcBN焼結体を用いて実施例1と同一条件で切削試験を行った。結果を表5の「切削試験」欄に示す。
試料50~試料60の立方晶窒化硼素焼結体は実施例に該当する。試料50~試料60(実施例)は、実施例1で作製された試料1-1~試料1-3(比較例)に比べて、工具寿命が長いことが確認された。
今回開示された実施の形態および実施例はすべての点で例示であって、制限的なものではないと考えられるべきである。本発明の範囲は上記した実施の形態および実施例ではなく請求の範囲によって示され、請求の範囲と均等の意味、および範囲内でのすべての変更が含まれることが意図される。
Claims (4)
- 立方晶窒化硼素粒子と、結合材と、を備える立方晶窒化硼素焼結体であって、
前記立方晶窒化硼素焼結体の前記立方晶窒化硼素粒子の含有率は、30体積%以上80体積%以下であり、
前記結合材は、
周期表の第4族元素、第5族元素、第6族元素、アルミニウム、珪素、鉄、コバルト及びニッケルからなる第1群より選ばれる1種の元素の単体、並びに、前記第1群より選ばれる2種以上の元素からなる合金及び金属間化合物、からなる第2群より選ばれる少なくとも1種を含み、又は
前記第1群より選ばれる1種の元素と、窒素、炭素、硼素及び酸素からなる第3群より選ばれる少なくとも1種の元素とからなる化合物、及び、前記化合物の固溶体、からなる第4群より選ばれる少なくとも1種を含み、
前記立方晶窒化硼素焼結体の空隙の含有率は、0.001体積%以上0.20体積%以下である、立方晶窒化硼素焼結体。 - 前記空隙の円相当径の平均は、3nm以上60nm以下である、請求項1に記載の立方晶窒化硼素焼結体。
- 前記立方晶窒化硼素焼結体は、複数の前記空隙を含み、
前記空隙間の距離の平均は、1.5μm以上15μm以下である、請求項1又は請求項2に記載の立方晶窒化硼素焼結体。 - 前記立方晶窒化硼素焼結体の前記立方晶窒化硼素粒子の含有率は、40体積%以上75体積%以下である、請求項1から請求項3のいずれか1項に記載の立方晶窒化硼素焼結体。
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JPH10182234A (ja) * | 1996-12-25 | 1998-07-07 | Agency Of Ind Science & Technol | 立方晶窒化硼素基焼結材及びその製造方法 |
WO2007010670A1 (ja) * | 2005-07-15 | 2007-01-25 | Sumitomo Electric Hardmetal Corp. | 複合焼結体 |
JP2014198637A (ja) * | 2013-03-29 | 2014-10-23 | 住友電工ハードメタル株式会社 | 立方晶窒化ホウ素焼結体の製造方法および立方晶窒化ホウ素焼結体 |
JP2016107396A (ja) | 2014-11-27 | 2016-06-20 | 三菱マテリアル株式会社 | 耐チッピング性、耐摩耗性にすぐれた表面被覆切削工具 |
JP2016528132A (ja) * | 2013-05-31 | 2016-09-15 | エレメント シックス リミテッド | Pcbn材料、それを備える工具要素、およびそれを使用するための方法 |
WO2021024737A1 (ja) * | 2019-08-06 | 2021-02-11 | 住友電工ハードメタル株式会社 | 切削工具 |
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JPH10182234A (ja) * | 1996-12-25 | 1998-07-07 | Agency Of Ind Science & Technol | 立方晶窒化硼素基焼結材及びその製造方法 |
WO2007010670A1 (ja) * | 2005-07-15 | 2007-01-25 | Sumitomo Electric Hardmetal Corp. | 複合焼結体 |
JP2014198637A (ja) * | 2013-03-29 | 2014-10-23 | 住友電工ハードメタル株式会社 | 立方晶窒化ホウ素焼結体の製造方法および立方晶窒化ホウ素焼結体 |
JP2016528132A (ja) * | 2013-05-31 | 2016-09-15 | エレメント シックス リミテッド | Pcbn材料、それを備える工具要素、およびそれを使用するための方法 |
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WO2021024737A1 (ja) * | 2019-08-06 | 2021-02-11 | 住友電工ハードメタル株式会社 | 切削工具 |
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