WO2023039719A1 - 发光基板及其制备方法和发光装置 - Google Patents

发光基板及其制备方法和发光装置 Download PDF

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Publication number
WO2023039719A1
WO2023039719A1 PCT/CN2021/118275 CN2021118275W WO2023039719A1 WO 2023039719 A1 WO2023039719 A1 WO 2023039719A1 CN 2021118275 W CN2021118275 W CN 2021118275W WO 2023039719 A1 WO2023039719 A1 WO 2023039719A1
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Prior art keywords
light
layer
light emitting
emitting device
color
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PCT/CN2021/118275
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English (en)
French (fr)
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梅文海
冯靖雯
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to PCT/CN2021/118275 priority Critical patent/WO2023039719A1/zh
Priority to CN202180002551.XA priority patent/CN113950753A/zh
Priority to EP21957010.8A priority patent/EP4300577A1/en
Publication of WO2023039719A1 publication Critical patent/WO2023039719A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present disclosure relates to the technical field of illumination and display, and in particular to a light-emitting substrate, a preparation method thereof, and a light-emitting device.
  • OLED Organic Light-Emitting Diode, organic light-emitting diode
  • QLED Quantum Dot Light Emitting Diodes, quantum dot light-emitting diodes
  • a light-emitting substrate including: a substrate; a plurality of light-emitting devices disposed on the substrate, the plurality of light-emitting devices including: at least one first light-emitting device and at least one second light-emitting device, the The at least one first light emitting device includes: a first color light emitting layer with a first thickness, the at least one second light emitting device includes a first color light emitting layer with a second thickness, and The first material layer and the second color light emitting layer are sequentially stacked on the first color light emitting layer included in the second light emitting device; wherein, the second thickness is smaller than the first thickness; and
  • the first material layer is configured to transport holes transported from the first color light emitting layer to the second color light emitting layer, and to transmit holes from the second color light emitting layer to the second color light emitting layer. or, the first material layer is configured to transmit the electrons transmitted from the first color light emitting layer to the second color light emit
  • the at least one second light-emitting device further includes: an electron transport layer disposed on a side of the light-emitting layer of the first color included in the second light-emitting device that is close to the substrate, and the first The material of a material layer includes a material having an electron transport function; or, the at least one second light-emitting device further includes: the first color light-emitting layer included in the second light-emitting device is disposed close to the substrate
  • the hole transport layer on the side, the material of the first material layer includes a material having a hole transport function.
  • the material of the first material layer is different from the material of the electron transport layer;
  • the material of the first material layer is different from the material of the hole transport layer.
  • the light-emitting layer of the second color is only disposed in the region where the second light-emitting device is located; or, the light-emitting layer of the second color includes a first part disposed in the region where the second light-emitting device is located and In the second part of the area where the first light emitting device is located, the second part is located on the first color light emitting layer included in the first light emitting device and is in contact with the first color light emitting layer, the The first portion has a third thickness, the second portion has a fourth thickness, the fourth thickness is less than the third thickness.
  • the fourth thickness is less than the second thickness.
  • the material of the first color light-emitting layer and the material of the second color light-emitting layer both include quantum dot light-emitting materials.
  • the plurality of light emitting devices further include: at least one third light emitting device; the at least one third light emitting device includes: the first color light emitting layer having a fifth thickness, and The direction of the substrate is sequentially stacked on the second material layer and the third color light emitting layer on the first color light emitting layer included in the third light emitting device, wherein the fifth thickness is smaller than the first color light emitting layer.
  • the second material layer is configured to transport holes transported from the first color light emitting layer to the third color light emitting layer, and The electrons transmitted from the three-color light-emitting layers are blocked, or the second material layer is configured to transmit the electrons transmitted from the first-color light-emitting layer to the third-color light-emitting layer, and block the electrons transmitted from the third color light-emitting layer. The holes transported by the color emitting layer are blocked.
  • the second material layer and the first material layer are connected as a continuous structure.
  • the second-color light-emitting layer when the second-color light-emitting layer includes a first portion and a second portion, the second-color light-emitting layer further includes a third portion disposed in a region where the third light-emitting device is located, and The third portion is located between the second material layer and the third color light emitting layer.
  • the third light emitting device further includes a third material layer, the third material layer is located between the third portion and the third color light emitting layer, the third material layer is configured In order to transport the holes transported from the third part to the third color light-emitting layer and block the electrons transported from the third color light-emitting layer, or, the second material layer is configured to Electrons transferred from the third portion are transferred to the third color light emitting layer, and holes transferred from the third color light emitting layer are blocked.
  • the material of the second material layer is different from the material of the first material layer.
  • the third color light emitting layer is only disposed in the region where the third light emitting device is located; or, the third color light emitting layer includes a third part disposed in the region where the third light emitting device is located, And the fourth part arranged in the area where the first light emitting device is located and the fifth part arranged in the area where the second light emitting device is located, and the fourth part is located in the first color included in the first light emitting device
  • the fifth part is located in the second color light emitting layer included in the second light emitting device above and in contact with the second color light-emitting layer
  • the third portion has a sixth thickness
  • the fourth portion and the fifth portion have a seventh thickness
  • the seventh thickness is smaller than the sixth thickness. thickness.
  • the material of the third color light emitting layer includes quantum dot light emitting material.
  • the first material layer is prepared by at least one electron transport material under electromagnetic radiation; the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxyl and alkyl
  • the first material layer is prepared by at least one electron transport material under electromagnetic radiation; the general structural formula of the hole transport material is shown in the following formula (II):
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • a light-emitting device including: the above-mentioned light-emitting substrate.
  • a method for preparing a light-emitting substrate including:
  • a plurality of light emitting devices are formed on a substrate, and the plurality of light emitting devices include at least one first light emitting device and at least one second light emitting device; the at least one first light emitting device includes: a first color light emitting device having a first thickness layer, the at least one second light-emitting device includes the first color light-emitting layer with a second thickness, and the first color light-emitting layer included in the second light-emitting device is sequentially stacked along the direction away from the substrate A first material layer and a second color light emitting layer on the color light emitting layer; wherein the second thickness is smaller than the first thickness; and in the second light emitting device, the first material layer is configured to Holes transported from the first-color light-emitting layer are transported to the second-color light-emitting layer, and electrons transported from the second-color light-emitting layer are blocked, or the first material layer is configured to Electrons transferred from the first color light emitting layer are transferred to the second color light emitting layer,
  • the step of forming the first material layer includes:
  • a first thin film is formed on the substrate on which the light emitting layer of the first color is formed; and the first thin film is patterned to form the first material layer in the region where the second light emitting device is located.
  • patterning the first film comprises:
  • Electromagnetic radiation is applied to the part of the first film located in the area where the second light-emitting device is located to change the solubility of the part of the first film located in the area where the second light-emitting device is located; The part outside the area where the second light emitting device is located is dissolved, and the part of the first film located outside the area where the second light emitting device is located is removed.
  • the material of the first film is an electron transport material or a hole transport material; the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • the step of forming the light-emitting layer of the first color includes:
  • a second thin film is formed on the substrate, and the material of the second thin film includes the first quantum dot luminescent material; electromagnetic radiation is performed on the part of the second thin film located in the region where the first light emitting device is located, changing the The solubility of the part of the second film located in the area where the first light-emitting device is located; dissolving the part of the second film located outside the area where the first light-emitting device is located, to obtain the light-emitting device contained in the first light-emitting device
  • the light emitting layer of the first color has a thickness and the light emitting layer of the first color included in the second light emitting device has a second thickness.
  • the step of forming the light-emitting layer of the second color includes:
  • a third thin film is formed on the substrate on which the first material layer is formed, the third thin film includes the second quantum dot luminescent material; and electromagnetically conducts the part of the third thin film located in the area where the second light emitting device is located. Radiation, changing the solubility of the part of the third film located in the area where the second light-emitting device is located; dissolving the part of the third film located outside the area where the second light-emitting device is located, so that the third film is located in the area where the second light-emitting device is located.
  • the area other than the area where the second light-emitting device is located is not covered, or, the third thin film forms a residual part with a thickness less than 5 nm in the area where the second light-emitting device is located.
  • the light-emitting substrate further includes: at least one third light-emitting device, the at least one third light-emitting device includes a first-color light-emitting layer with a fifth thickness, and is sequentially stacked along a direction away from the substrate The second material layer and the third color light emitting layer on the first color light emitting layer included in the third light emitting device, the preparation method further includes: sequentially forming the second material layer on the substrate and the step of the third color light-emitting layer.
  • the material of the second material layer is different from that of the first material layer, and the step of forming the second material layer on the substrate includes:
  • a fourth film is formed on the substrate on which the light-emitting layer of the second color is formed; patterning the fourth film is used to form the second material layer in the region where the third light-emitting device is located.
  • said patterning said fourth film includes:
  • Electromagnetic radiation is applied to the part of the fourth film located in the area where the third light-emitting device is located to change the solubility of the part of the fourth film located in the area where the third light-emitting device is located; The part outside the area where the third light emitting device is located is dissolved, and the part of the fourth film located outside the area where the third light emitting device is located is removed.
  • the second material layer and the first material layer are connected to form a continuous structure, and the step of forming the second material layer on the substrate includes:
  • Electromagnetic radiation is performed on the part of the first film located in the area where the second light-emitting device is located, and at the same time, electromagnetic radiation is also performed on the part of the first film located in the area where the third light-emitting device is located, changing the The solubility of the part of the first thin film located in the area where the third light emitting device is located.
  • the step of forming the third color light-emitting layer on the substrate includes:
  • a fifth thin film is formed on the substrate on which the second material layer is formed, the fifth thin film includes a third quantum dot luminescent material; and the part of the fifth thin film located in the area where the third light emitting device is located is subjected to electromagnetic irradiating, changing the solubility of the part of the fifth film located in the area where the third light-emitting device is located; dissolving the part of the fifth film located outside the area where the third light-emitting device is located, so that the fifth film is located in the The part outside the area where the third light-emitting device is located is not covered, or the fifth thin film forms a residual part with a thickness less than 5 nm in the area outside the area where the third light-emitting device is located.
  • the light-emitting layer of the second color further includes a residual portion formed in the area where the third light-emitting device is located, and the residual portion formed in the area where the third light-emitting device is located in the light-emitting layer of the second color
  • the third light emitting device further includes a first light emitting layer disposed between the second material layer and the third color light emitting layer.
  • the third material layer is formed.
  • the step of forming the third material layer includes:
  • a sixth thin film is formed on the substrate on which the light emitting layer of the second color is formed, and the sixth thin film is patterned to form the third material layer in a region where the third light emitting device is located.
  • said patterning said sixth film includes:
  • Electromagnetic radiation is applied to the part of the sixth film located in the area where the third light-emitting device is located to change the solubility of the part of the sixth film located in the area where the third light-emitting device is located; The part outside the area where the third light-emitting device is located is dissolved, and the part of the sixth film located outside the area where the third light-emitting device is located is removed.
  • Fig. 1A is a cross-sectional structure diagram of a light-emitting substrate according to some embodiments
  • Fig. 1B is a top structural view of a light-emitting substrate according to some embodiments.
  • FIG. 1C is an equivalent circuit diagram of a 3T1C according to some embodiments.
  • 2A is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • 2B is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • 2C is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • 2D is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • 2E is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • Fig. 2F is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • FIG. 3 is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • FIG. 4A is a flowchart of a part of a method of manufacturing a light-emitting substrate according to some embodiments
  • 4B is a flow chart of another part of a method of manufacturing a light-emitting substrate according to some embodiments.
  • 4C is a flowchart of another part of another method of manufacturing a light-emitting substrate according to some embodiments.
  • 4D is a flow chart of another part of a method of manufacturing a light-emitting substrate according to some embodiments.
  • 4E is a flowchart of another part of another method of manufacturing a light-emitting substrate according to some embodiments.
  • FIG. 4F is a flowchart of another part of a method of manufacturing a light-emitting substrate according to some embodiments.
  • 4G is a flowchart of another part of another method of manufacturing a light-emitting substrate according to some embodiments.
  • 4H is a flow chart of another part of a method of manufacturing a light-emitting substrate according to some embodiments.
  • 4I is a flowchart of another part of another method of manufacturing a light-emitting substrate according to some embodiments.
  • FIG. 4J is a flowchart of another part of a method of manufacturing a light-emitting substrate according to some embodiments.
  • 4K is a flow chart of another part of another method of manufacturing a light-emitting substrate according to some embodiments.
  • Fig. 4L is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • 4M is a cross-sectional structure diagram of another light-emitting substrate according to some embodiments.
  • FIG. 4N is a cross-sectional structure view of another light-emitting substrate according to some embodiments.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality” means two or more.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, A and B A combination of A and C, a combination of B and C, and a combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • Exemplary embodiments are described herein with reference to cross-sectional and/or plan views that are idealized exemplary drawings.
  • the thickness of layers and regions are exaggerated for clarity. Accordingly, variations in shape from the drawings as a result, for example, of manufacturing techniques and/or tolerances are contemplated.
  • example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have curved features.
  • the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
  • a light-emitting device which includes a light-emitting substrate, and of course may also include other components, such as a circuit for providing an electrical signal to the light-emitting substrate to drive the light-emitting substrate to emit light.
  • the circuit may be called For the control circuit, a circuit board and/or an IC (Integrate Circuit) electrically connected to the light-emitting substrate may be included.
  • the light emitting device may be a lighting device, and in this case, the light emitting device is used as a light source to realize the lighting function.
  • the light emitting device may be a backlight module in a liquid crystal display device, a lamp for internal or external lighting, or various signal lamps, etc.
  • the light-emitting device may be a display device.
  • the light-emitting substrate is a display substrate for realizing the function of displaying an image (ie, a picture).
  • a light emitting device may include a display or a product including a display.
  • the display may be a flat panel display (Flat Panel Display, FPD), a microdisplay, and the like. If divided according to whether the user can see the scene on the back of the display, the display can be a transparent display or an opaque display. According to whether the display can be bent or rolled, the display may be a flexible display or a common display (which may be called a rigid display).
  • Exemplary products that include displays may include: computer monitors, televisions, billboards, laser printers with display capabilities, telephones, cell phones, Personal Digital Assistants (PDAs), laptop computers, digital cameras, camcorders Recorders, viewfinders, vehicles, large walls, theater screens or stadium signage, etc.
  • PDAs Personal Digital Assistants
  • laptop computers digital cameras
  • camcorders Recorders viewfinders
  • vehicles large walls, theater screens or stadium signage, etc.
  • the light emitting substrate 1 includes a substrate 11 , a pixel defining layer 12 disposed on the substrate 11 and a plurality of light emitting devices 13 .
  • the pixel defining layer 12 has a plurality of openings Q, and a plurality of light emitting devices 13 can be arranged corresponding to the plurality of openings Q one by one.
  • the multiple light emitting devices 13 here may be all or part of the light emitting devices 13 included in the light emitting substrate 1 ; the multiple openings Q may be all or part of the openings on the pixel defining layer 12 .
  • Each light emitting device 13 may include a first electrode 131, a second electrode 132, and a light emitting functional layer 133 disposed between the first electrode 131 and the second electrode 132, and the light emitting functional layer 133 includes a light emitting layer.
  • the first electrode 131 may be an anode, and in this case, the second electrode 132 is a cathode. In other embodiments, the first electrode 131 may be a cathode, and in this case, the second electrode 132 is an anode.
  • the light-emitting principle of the light-emitting device 13 is: through the circuit connected by the anode and the cathode, the anode is used to inject holes into the light-emitting functional layer 133, and the cathode injects electrons into the light-emitting functional layer 133, and the formed electrons and holes form excitation in the light-emitting layer. Excitons radiatively transition back to the ground state, emitting photons.
  • the light-emitting functional layer 133 can also include: a hole transport layer (Hole Transport Layer, HTL) 133b, an electron transport layer (Electronic Transport Layer, ETL) 133c, at least one of a hole injection layer (Hole Injection Layer, HIL) 133d and an electron injection layer (Electronic Injection Layer, EIL) 133e.
  • HTL hole transport Layer
  • ETL electron transport layer
  • the light emitting functional layer 133 may include a hole transport layer (HTL) 133b disposed between the anode and the light emitting layer 133a, and an electron transport layer (ETL) 133c disposed between the cathode and the light emitting layer 133a.
  • the light-emitting functional layer 133 can also include a hole injection layer (HIL) 133d disposed between the anode and the hole transport layer 133b, and a hole injection layer (HIL) 133d disposed between the cathode and the electron transport layer.
  • Electron injection layer (EIL) 133e between 133c.
  • a drive circuit connected to each light emitting device 13 may also be provided on the light emitting substrate 1, and the drive circuit may be connected to a control circuit to drive each light emitting device 13 to emit light according to an electrical signal input from the control circuit.
  • the driving circuit can be an active driving circuit or a passive driving circuit.
  • the light-emitting substrate 1 can emit white light, monochromatic light (light of a single color), or light with adjustable colors.
  • the light-emitting substrate 1 can emit white light.
  • the plurality of light emitting devices 13 (for example, all the light emitting devices 13 ) contained in the light emitting substrate 1 all emit white light.
  • the material of the light emitting layer 133a in each light emitting device 13 may include a mixed material of a red light emitting material, a green light emitting material and a blue light emitting material.
  • white light can be realized by driving each light emitting device 13 to emit light.
  • the second case as shown in FIG.
  • a plurality of light emitting devices 13 include a light emitting device 13R emitting red light, a light emitting device 13G emitting green light and a light emitting device 13B emitting blue light, wherein the light emitting device 13R
  • the material of the light emitting layer 133a in the light emitting device 13G may include a red light emitting material
  • the material of the light emitting layer 133a in the light emitting device 13G may include a green light emitting material
  • the material of the light emitting layer 133a in the light emitting device 13B may include a blue light emitting material.
  • the brightness of the light emitting device 13R, the light emitting device 13G and the light emitting device 13B can be controlled so that the light emitting device 13R, the light emitting device 13G and the light emitting device 13B realize light mixing, so that the light emitting substrate 1 presents white light.
  • the light-emitting substrate 1 can be used for lighting, that is, it can be applied to a lighting device.
  • the light-emitting substrate 1 can emit monochromatic light.
  • the plurality of light-emitting devices 13 contained in the light-emitting substrate 1 (for example, all the light-emitting devices 13) all emit monochromatic light (such as red light).
  • the material of the light-emitting layer in each light-emitting device 13 Includes red luminescent material.
  • red light can be realized by driving each light emitting device 13 to emit light.
  • the structure of the light-emitting substrate 1 is similar to that of the plurality of light-emitting devices described in the second case in the first example. Achieve monochromatic light emission.
  • the light-emitting substrate 1 can be used for lighting, that is, it can be applied to a lighting device, and it can also be used to display a single-color image or picture, that is, it can be applied to a display device.
  • the light-emitting substrate 1 can emit light with adjustable color (i.e. colored light), and the structure of the light-emitting substrate 1 is similar to that of the plurality of light-emitting devices described in the second case in the first example Yes, by controlling the brightness of each light emitting device 13, the color and brightness of the mixed light emitted by the light emitting substrate 1 can be controlled, and colored light can be realized.
  • adjustable color i.e. colored light
  • the light-emitting substrate can be used to display images or pictures, that is, it can be applied to a display device.
  • the light-emitting substrate can also be used in a lighting device.
  • the display area A includes a plurality of sub-pixel areas Q', each sub-pixel area Q' corresponds to an opening Q, and an opening Q corresponds to a light-emitting device 13, and each sub-pixel area Q' is provided with a light-emitting device 13 for driving the corresponding A pixel driving circuit 200 that emits light.
  • the peripheral area S is used for wiring, such as connecting the gate driving circuit 100 of the pixel driving circuit 200 .
  • the pixel driving circuit 200 of the light-emitting substrate 1 may also have a 3T1C structure as shown in FIG. 1C .
  • the plurality of light emitting devices include: at least one first light emitting device 13a and at least one second light emitting device 13b.
  • at least one first light emitting device 13a may be a light emitting device 13R emitting red light
  • at least one second light emitting device 13b may be a light emitting device 13G emitting green light.
  • At least one first light emitting device 13a includes: a first color light emitting layer 133a_1 having a first thickness d1, at least one second light emitting device 13b includes a first color light emitting layer 133a_1 having a second thickness d2, and The first material layer 10 and the second color light emitting layer 133a_2 disposed on the first color light emitting layer 133a_1 included in the second light emitting device 13b are stacked in sequence. That is, the material of the first color light emitting layer 133a_1 is a red light emitting material, and the material of the second color light emitting layer 133a_2 is a green light emitting material.
  • the second thickness d2 is smaller than the first thickness d1, and in the second light emitting device 13b, the first material layer 10 is configured to transport holes transported from the first color light emitting layer 133a_1 to the second color light emitting layer 133a_2, And block electrons transmitted from the second color light emitting layer 133a_2, or, the first material layer 10 is configured to transmit electrons transmitted from the first color light emitting layer 133a_1 to the second color light emitting layer 133a_2, and block electrons transmitted from the second color light emitting layer 133a_1. The holes transported by the color light emitting layer 133a_2 are blocked.
  • the thickness of the first color light emitting layer 133a_1 included in the second light emitting device 13b is smaller than the thickness of the first color light emitting layer 133a_1 included in the first light emitting device 13a.
  • the first material layer 10 may function as an electron blocking layer or a hole blocking layer.
  • At least one second light emitting device 13 further includes: an electron transport layer 133b disposed on a side of the first color light emitting layer 133a_1 included in the second light emitting device 13b close to the substrate 11,
  • the material of the first material layer 10 includes a material having an electron transport function. That is, the light-emitting substrate is an "inverted" light-emitting substrate.
  • At least one second light-emitting device 13 further includes: a hole transport layer disposed on the side of the first-color light-emitting layer 133a_1 included in the second light-emitting device 13b that is close to the substrate 11 133c, the material of the first material layer 10 includes a material having a hole transport function. That is, the light-emitting substrate is a "upright" type light-emitting substrate.
  • the above-mentioned electron transport layer 133b and hole transport layer 133c may be a pattern formed in the area where the second light emitting device is located, or they may cover the whole layer.
  • the above-mentioned electron transport layer 133b and hole transport layer 133c may be in contact with or separated from the first color light emitting layer 133a_1 included in the second light emitting device 13b (such as in the case where the second light emitting device 13b includes the electron transport layer 133b In the case where the second light emitting device 13b includes a hole transport layer 133c, an electron blocking layer is separated therebetween).
  • the second light emitting device 13b includes the electron transport layer 133b, and the electron transport layer 133b covers the entire layer
  • the first The front film layer 20 of the one-color light emitting layer 133a_1 is the hole transport layer 133c.
  • the material of the first color light emitting layer 133a_1 may include a first quantum dot light emitting material, such as a red quantum dot light emitting material, and a second color light emitting material.
  • the material of the light emitting layer 133a_2 may include a second quantum dot light emitting material, such as a green quantum dot light emitting material.
  • the front film layer 20 of the quantum dot luminescent material is shown here is the electron transport layer 133b or the hole transport layer 133c, those skilled in the art can understand that the front film layer 20 of the quantum dot luminescent material can also be It is the electron injection layer 133d or the hole injection layer 133e.
  • the front film layer 20 of the quantum dot luminescent material as the electron transport layer 133b as an example
  • a plurality of cathodes, an electron injection layer, and an electron transport layer are sequentially formed on the substrate 11, wherein the plurality of cathodes They can be arranged at intervals, and are respectively located in one opening in one-to-one correspondence, and the electron injection layer and the electron transport layer are evenly covered by the entire layer.
  • a liquid film of the red quantum dot luminescent material is formed by spin coating, that is, the red quantum dot luminescent material is dispersed or dissolved in a solvent, and then spin-coated on the substrate.
  • the liquid film of the red quantum dot luminescent material is on the entire electron transport layer. Then, the liquid film of the red quantum dot light-emitting material is patterned. Specifically, taking the red quantum dot light-emitting material changing its solubility under the irradiation of ultraviolet light as an example, the liquid film of the red quantum dot light-emitting material is located in the first light-emitting device 13a The part where the area is located is irradiated with ultraviolet light, so that the liquid film of the red quantum dot luminescent material is not dissolved in the part where the first light emitting device 13a is located.
  • the red quantum dot luminescent material The part outside the area where the first light-emitting device 13a is located can be dissolved. However, in the actual dissolution process, the part of the red quantum dot light-emitting material outside the area where the first light-emitting device 13a is located cannot be completely dissolved. A region other than the region where the light emitting device 13a is located is left.
  • the first thickness d1 is 20 nm ⁇ 50 nm
  • the second thickness d2 is 5 nm ⁇ 15 nm. That is, FIG. 2A shows that the thickness of the part of the red quantum dot luminescent material located in the region where the first light emitting device is located is 20nm-50nm, and the thickness of the remaining red quantum dot luminescent material is 5nm-15nm.
  • the residual red quantum dot luminescent material emits light.
  • the light emitting devices 13 can be classified into “upright” type light emitting devices and "inverted” type light emitting devices.
  • the anode is closer to the substrate 11 than the cathode
  • the cathode is closer to the substrate 11 than the anode.
  • the distribution of the recombination region of electrons and holes can have two possible situations.
  • electrons and holes Transport balance, the recombination region of electrons and holes can fall in the superimposed structure of residual red quantum dot luminescent material and green quantum dot luminescent material, causing a part of electrons and holes to recombine and emit light in the residual red quantum dot luminescent material , and the other part recombines and emits light in the green quantum dot luminescent material.
  • the transport of electrons and holes is unbalanced. At this time, there are two possible cases.
  • the transport speed of electrons is greater than that of holes, and the recombination region of electrons and holes will flow to the remaining red quantum
  • the offset in the dot luminescent material causes most of the electrons and holes to recombine and emit light in the remaining red quantum dot luminescent material, and a small part of electrons and holes recombine and emit light in the green quantum dot luminescent material.
  • the hole transmission speed is greater than the electron transmission speed, and the recombination region of electrons and holes will shift to the green quantum dot luminescent material, causing most of the electrons and holes to recombine and emit light in the green quantum dot luminescent material. A small portion of electrons and holes recombine and emit light in the remaining red quantum dot luminescent material.
  • the distribution of the recombination region of electrons and holes can refer to the analysis process similar to that of the above-mentioned "upright” light-emitting device. The difference is that, compared with the "upright” light-emitting device mentioned above, the electrons of the "inverted” light-emitting device are transported from bottom to top, and holes are transported from top to bottom.
  • the recombination region of electrons and holes When the hole transport speed is low, the recombination region of electrons and holes will shift to the green quantum dot luminescent material, causing most of the electrons and holes to recombine and emit light in the green quantum dot luminescent material, and a small part of electrons and holes Recombine and emit light in the residual red quantum dot luminescent material.
  • the hole transmission speed is greater than the electron transmission speed, the recombination region of electrons and holes will shift to the remaining red quantum dot luminescent material, causing most of the electrons and holes to recombine and emit light in the remaining red quantum dot luminescent material , a small number of electrons and holes recombine and emit light in the green quantum dot luminescent material.
  • the first material layer 10 when the light-emitting device is a "upright" light-emitting device, by inserting the first material layer 10 between the remaining red quantum dot light-emitting material and the green quantum dot light-emitting material, the first The material layer 10 may be configured to transmit holes transmitted from the remaining red quantum dot light-emitting material to the green quantum dot light-emitting material, and block electrons transmitted from the green quantum dot light-emitting material.
  • the first material layer 10 The holes in the second light-emitting device 13b can be transported, and the electrons in the second light-emitting device 13b can be blocked, so that the recombination area of holes and electrons in the second light-emitting device 13b can be changed, such as the remaining The recombined holes and electrons in the red quantum dot luminescent material are transferred to the green quantum dot luminescent material for recombination, so that the remaining red quantum dot luminescent material can be prevented from emitting light.
  • the electrons can also be confined in the green quantum dot light-emitting material, preventing electrons from being directly transported to the remaining red quantum dot light-emitting material to recombine with holes to emit light. Improve the luminous efficiency of the green quantum dot luminescent material.
  • energy transfer between the green quantum dot luminescent material and the remaining red quantum dot luminescent material can also be avoided, thereby reducing the luminescence probability of the remaining red quantum dot luminescent material as a whole, reducing Bad display caused by color mixing.
  • the first material layer 10 when the light emitting device is an "inverted" light emitting device, by inserting the first material layer 10 between the remaining red quantum dot light emitting material and the green quantum dot light emitting material, the first material layer can be configured to The electrons transmitted from the remaining red quantum dot luminescent material are transmitted to the green quantum dot luminescent material, and the holes transmitted from the green quantum dot luminescent material are blocked, and the electrons and holes can also be confined in the green quantum dot luminescent material, Compared with the recombination of electrons and holes in the residual red quantum dot light-emitting material in the related art, the recombination probability of electrons and holes in the residual red quantum dot light-emitting material can be reduced, so that the remaining red quantum dots can be reduced. While improving the luminous efficiency of the luminescent material, the luminous efficiency of the green quantum dot luminescent material can be improved, thereby reducing display defects caused by color mixing.
  • the material of the first material layer 10 is different from that of the electron transport layer 133b. That is, the energy level of the material of the first material layer 10 is different from the energy level of the material of the electron transport layer 133b, and the material of the first material layer 10 can be selected to obtain the first material layer 10 with an appropriate energy level. , so that it can better play the role of transporting electrons and blocking holes.
  • the material of the first material layer 10 is different from the material of the hole transport layer 133c. That is, the energy level of the material of the first material layer 10 is different from the energy level of the material of the hole transport layer 133c, and the material of the first material layer 10 can be selected to obtain a first material layer with an appropriate energy level 10, so that it can better play the role of transporting holes and blocking electrons.
  • the first material layer 10 can be prepared by at least one electron transport material under electromagnetic radiation, and the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • the first material layer 10 acts as a hole blocking layer.
  • Electron-withdrawing groups are relative to electron-donating groups.
  • semiconductor materials quinoline groups, pyrimidine groups, imidazole groups, triazine groups, etc. are all electron-withdrawing groups.
  • Arylamine groups, carbazole groups, fluorene groups, etc. are all electron-donating groups.
  • the electron-withdrawing group is selected from substituted or unsubstituted benzimidazole groups.
  • B is selected from groups capable of changing solubility under electromagnetic radiation, which means that B can be any group capable of undergoing physical or chemical changes under electromagnetic radiation, so that the solubility of the electron transport material changes.
  • Electromagnetic waves are divided into different types according to frequency or wavelength, including: radio waves, microwaves, terahertz radiation, infrared radiation, visible light, ultraviolet light, X-rays and gamma rays.
  • the electromagnetic radiation here refers to irradiating the electron transport material with electromagnetic waves (may be electromagnetic waves of any waveband).
  • B may be any one of alkenyl, alkynyl, acrylate and epoxy. That is, B is a group that can undergo a crosslinking reaction under electromagnetic radiation. In this way, under electromagnetic radiation, the molecules of the electron transport material can be cross-linked into a network, thereby changing the solubility of the electron transport material.
  • alkenyl, alkynyl, epoxy and acrylate groups are shown below:
  • the electron transport material can have a structure as shown in the following formula:
  • the first material layer 10 when used as a hole blocking layer, the first material layer 10 not only needs to satisfy the above structural formula, but also meets a certain energy level requirement, so as to better function The role of transporting electrons and blocking holes.
  • the energy levels among the first material layer 10, the first color light emitting layer 133a_1 and the second color light emitting layer 133a_2 satisfy: the LUMO (Lowest Unoccupied Molecular Orbital, lowest unoccupied molecular orbital)
  • the difference between the energy level of the molecular orbital) and the LUMO energy level of the first color light emitting layer 133a_1, and the difference between the LUMO energy level of the second color light emitting layer 133a_2 and the LUMO energy level of the first material layer 10 are all less than or equal to the first preset Set a threshold, such as 0.3eV
  • the difference between the HOMO (Highest Occupied Molecular Orbital, the highest occupied molecular orbital) energy level of the second color light-emitting layer 133a_2 and the HOMO energy level of the first material layer 10 is greater than the second preset threshold, such as 0.3 eV.
  • the first material layer 10 can be prepared by at least one hole transport material under electromagnetic radiation; the general structural formula of the hole transport material is shown in the following formula (II):
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • the first material layer 10 acts as an electron blocking layer.
  • the electron-donating group may be any one of substituted or unsubstituted triphenylamine groups, diphenylamine groups, carbazolyl groups, and fluorenyl groups.
  • D is selected from groups that can change the solubility under electromagnetic radiation, which means that D can be any group that can undergo physical or chemical changes under electromagnetic radiation, so that the solubility of the hole transport material changes. group.
  • Electromagnetic waves are divided into different types according to frequency or wavelength, including: radio waves, microwaves, terahertz radiation, infrared radiation, visible light, ultraviolet light, X-rays and gamma rays.
  • the electromagnetic radiation here refers to irradiating the hole transport material with electromagnetic waves (may be electromagnetic waves of any waveband).
  • D may be selected from any one of alkenyl, alkynyl, acrylate and epoxy. That is, D is a group that can undergo a crosslinking reaction under electromagnetic radiation. In this way, under electromagnetic radiation, the molecules of the hole transport material can be cross-linked into a network, thereby changing the solubility of the hole transport material.
  • the hole transport material may have a structure as shown in the following formula:
  • the first material layer 10 when used as an electron blocking layer, in addition to satisfying the above conditions, the first material layer 10 can also meet a certain energy level requirement, so as to better function as an electron blocking layer. The role of transporting electrons and blocking holes.
  • the energy levels of the first material layer 10, the first color light emitting layer 133a_1 and the second color light emitting layer 133a_2 satisfy: the HOMO of the first material layer 10
  • the difference between the energy level and the HOMO energy level of the first color light-emitting layer 133a_1, and the difference between the HOMO energy level of the second color light-emitting layer 133a_2 and the HOMO energy level of the first material layer 10 are all less than or equal to the third preset threshold, such as 0.3eV
  • the difference between the LUMO energy level of the first material layer 10 and the LUMO energy level of the second color light emitting layer 133a_2 is greater than the fourth preset threshold, such as 0.3eV.
  • the second-color light-emitting layer 133a_2 is only disposed in the region where the second light-emitting device 13b is located, or, as shown in FIG. 2B, the second-color light-emitting layer 133a_2 includes The first part 133a_21 of the area where 13b is located and the second part 133a_22 arranged in the area where the first light-emitting device 13a is located, and the second part 133a_22 is located on the first color light-emitting layer 133a_1 included in the first light-emitting device, and is connected with the first color
  • the light emitting layer 133a_1 is in contact, wherein the first part 133a_21 has a third thickness d3, the second part 133a_22 has a fourth thickness d4, and the fourth thickness d4 is smaller than the third thickness d3.
  • the second color light emitting layer 133a_2 in the case where the second color light emitting layer 133a_2 is only disposed in the area where the second light emitting device 13b is located, the second color light emitting layer 133a_2 has no coverage in the area where the first light emitting device 13a is located, which may be due to the second
  • the material properties of the color light emitting layer 133a_2 and the first color light emitting layer 133a_1 are relatively similar.
  • the difference is that in the case of removing the part of the second color light emitting layer 133a_2 located in the area where the first light emitting device 13a is located by dissolving, since the second color light emitting layer 133a_2 Compared with the first-color light-emitting layer 133a_1, the material properties of its front film layer 20 are similar. Therefore, by selecting a suitable solvent, the second-color light-emitting layer 133a_2 can be completely removed, so that the second-color light-emitting layer can be completely removed.
  • 133a_2 has no purpose of covering the area where the first light emitting device 13a is located.
  • the thickness of the part of the second color light-emitting layer 133a_2 in the region where the first light-emitting device 13a is located can also be controlled, such as making the second part 133a_22 have a fourth Thickness d4, the fourth thickness d4 is smaller than the third thickness d3, and those skilled in the art can understand that, in the case where the second color light emitting layer 133a_2 remains in the region where the first light emitting device 13a is located, in order to prevent the second color from emitting light
  • the layer 133a_2 emits light in the region where the first light emitting device 13a is located, and optionally, the fourth thickness d4 is a thickness that does not affect display.
  • the fourth thickness d4 is smaller than the second thickness d2.
  • the third thickness d3 is 20 nm ⁇ 50 nm, and the fourth thickness d4 is less than 5 nm.
  • the thickness of the second-color light-emitting layer 133a_2 may be 20nm ⁇ 50nm.
  • the plurality of light emitting devices 13 further include: at least one third light emitting device 13c.
  • At least one third light-emitting device 13c includes: a first-color light-emitting layer 133a_1 having a fifth thickness d5, and sequentially stacked on the first-color light-emitting layer 133a_1 included in the third light-emitting device 13c The second material layer 30 and the third color light emitting layer 133a_3.
  • the fifth thickness d5 is smaller than the first thickness d1
  • the second material layer 30 in the third light emitting device 13c, is configured to transport holes transported from the first color light emitting layer 133a_1 to the third color light emitting layer 133a_3, And block electrons transmitted from the third color light emitting layer 133a_3, or, the second material layer 30 is configured to transmit electrons transmitted from the first color light emitting layer 133a_1 to the third color light emitting layer 133a_3, and block the electrons transmitted from the third color light emitting layer 133a_1 The holes transported by the color light emitting layer 133a_2 are blocked.
  • At least one first light emitting device 13a is a light emitting device 13R that emits red light
  • at least one second light emitting device 13b is a light emitting device 13G that emits green light
  • at least one third light emitting device The device 13c may be a blue-emitting light emitting device 13B.
  • the first light emitting device 13a, the second light emitting device 13b and the third light emitting device 13c may respectively be light emitting devices that emit light of any color.
  • the first light emitting device 13a may be a light emitting device emitting blue light
  • the second light emitting device 13b may be a light emitting device emitting yellow light
  • the third light emitting device 13c may be a light emitting device emitting red light.
  • the thickness of the first color light emitting layer 133a_1 included in the third light emitting device 13c is smaller than the thickness of the first color light emitting layer 133a_1 included in the first light emitting device 13a.
  • the second material layer 30 may function as an electron blocking layer or a hole blocking layer.
  • the material of the first color light emitting layer 133a_1 may include the first quantum dot light emitting material, such as red quantum dot light emitting material.
  • the material of the second color luminescent layer 133a_2 may include a second quantum dot luminescent material, such as a green quantum dot luminescent material
  • the material of the third color luminescent layer 133a_3 may include a third quantum dot luminescent material, such as a blue quantum dot luminescent material.
  • Luminescent material may include the first quantum dot light emitting material, such as red quantum dot light emitting material.
  • the material of the second color luminescent layer 133a_2 may include a second quantum dot luminescent material, such as a green quantum dot luminescent material
  • the material of the third color luminescent layer 133a_3 may include a third quantum dot luminescent material, such as a blue quantum dot luminescent material.
  • Luminescent material may include the first quantum dot light emitting material
  • the second material layer 30 can Play the same role as the first material layer 10 , for details, please refer to the description of the first material layer 10 , which will not be repeated here.
  • the second material layer 30 and the first material layer 10 are connected to form a continuous structure. That is, the material of the second material layer 30 and the first material layer 10 are the same, and they are connected into an integrated structure.
  • the first material layer 10 and the second material layer 30 can be formed by the same patterning process, that is, Forming the first material layer 10 and the second material layer 30 before forming the second color light emitting layer 133a_2 can save the preparation process and reduce the use of masks.
  • the first material layer 10 must not only It also satisfies a certain energy level relationship with the third color light emitting layer 133a_3.
  • the difference between the LUMO energy level of the first material layer and the LUMO energy level of the first color light-emitting layer, and the difference between the LUMO energy level of the second color light-emitting layer and The difference between the LUMO energy levels of the first material layer is less than or equal to the first preset threshold, such as 0.3eV, and the difference between the HOMO energy level of the second color light-emitting layer and the HOMO energy level of the first material layer is greater than the second preset threshold. , such as 0.3eV.
  • the difference between the LUMO energy level of the third color light-emitting layer and the LUMO energy level of the first material layer is less than or equal to the fifth preset threshold value, such as 0.3eV, the HOMO energy level of the third color light-emitting layer and the first material layer
  • the difference between the HOMO energy levels is greater than the sixth preset threshold, such as 0.3eV.
  • the difference between the HOMO energy level of the first material layer and the HOMO energy level of the first color light-emitting layer, and the difference between the HOMO energy level of the second color light-emitting layer and the first material layer is greater than the fourth preset threshold value, such as 0.3eV. .
  • the difference between the HOMO energy level of the third color light-emitting layer and the HOMO energy level of the first material layer is less than or equal to the seventh preset threshold, such as 0.3eV, and the difference between the LUMO energy level of the first material layer and the third color light-emitting layer
  • the difference between the LUMO energy levels is greater than the eighth preset threshold, such as 0.3eV.
  • the material of the first material layer 10 is different from the material of the second material layer 30 . That is, the first material layer 10 and the second material layer 30 may be formed through different patterning processes.
  • the material of the second material layer 30 may include at least one electron transport material, or the material of the second material layer 30 may include at least one hole transport material.
  • the general structural formula of the electron transport material may be shown in formula (I), and the general structural formula of the hole transport material may be shown in formula (II).
  • formula (I) The general structural formula of the electron transport material
  • formula (III) the general structural formula of the hole transport material
  • the material of the second material layer 10 can be obtained by changing the substituents in formula (I) or formula (II), so that the energy level of the second material layer 30 is the same as The energy levels of the first material layers 10 are different.
  • the second color light emitting layer 133a_2 when the second color light emitting layer 133a_2 includes a first part 133a_21 and a second part 133a_22, the second color light emitting layer 133a_2 further includes a The third part 133a_23.
  • the specific preparation method can refer to the preparation method of the second color light emitting layer 133a_2 above, the difference is that the second color light emitting layer 133a_2 is not only left in the area where the first light emitting device 13a is located, but also formed in the area where the third light emitting device 13c is located. residual.
  • the position of the third part 133a_23 in the area where the third light emitting device 13c is located has two situations.
  • the material of the second material layer 30 is different from the material of the first material layer 10, That is, the second material layer 30 may be formed after the second color light emitting layer 133a_2 is formed.
  • 133a_23) may be located between the second material layer 30 and the first color light emitting layer 133a_1.
  • the thickness d6 of the third portion 133a_23 is smaller than the second thickness d2.
  • the fourth thickness d4 is smaller than the second thickness d2
  • the properties of the material of the second color light emitting layer 133a_2 and the material of the first color light emitting layer 133a_1 are relatively similar, so that the The part of the second color light emitting layer 133a_2 disposed in the area where the third light emitting device 13c is located is dissolved to such a degree that only a small amount remains, so that the thickness of the third part 133a_23 can be made smaller than the second thickness d2.
  • the second material layer 30 and the first material layer 10 are connected as a continuous structure, that is, they are formed by the same patterning process before forming the second color light emitting layer 133a_2.
  • the first material layer 10 and the second material layer 30 are connected as a continuous structure, that is, they are formed by the same patterning process before forming the second color light emitting layer 133a_2.
  • the first material layer 10 and the second material layer 30 are connected as a continuous structure, that is, they are formed by the same patterning process before forming the second color light emitting layer 133a_2.
  • the first material layer 10 and the second material layer 30 are connected as a continuous structure, that is, they are formed by the same patterning process before forming the second color light emitting layer 133a_2.
  • the first material layer 10 and the second material layer 30 are connected as a continuous structure, that is, they are formed by the same patterning process before forming the second color light emitting layer 133a_2.
  • the first material layer 10 and the second material layer 30 are connected as
  • the properties of the material of the second color luminescent layer 133a_2 and the material of the second material layer 30 are quite different, so that the second color
  • the two-color light emitting layer 133a_2 forms a larger residue on the second material layer 30 , that is, the thickness of the third portion 133a_23 is greater than the thickness of the second portion 133a_22 .
  • the second-color light-emitting layer 133a_2 remains in the area where the first light-emitting device 13a is located. It should be noted that, according to the second-color light-emitting layer 133a_2, it may also not cover the area where the first light-emitting device 13a is located. It is known that the light-emitting substrate can also have a structure as shown in FIG. 2D. At this time, the second-color light-emitting layer 133a_2 only includes the first part 133a_21 arranged in the area where the second light-emitting device 13b is located and the first part 133a_21 arranged in the area where the third light-emitting device 13c is located. The third part 133a_23.
  • the third light emitting device 13c further includes a third material layer 40
  • the third material layer 40 is located between the third part 133a_23 and the third color light emitting layer 133a_3
  • the third material layer 40 is configured to transport holes transported from the third part 133a_23 to the third color light emitting layer 133a_3, and Block electrons transferred from the third color light emitting layer 133a_3, or the third material layer 40 is configured to transfer electrons transferred from the third part 133a_23 to the third color light emitting layer 133a_3, and block electrons transferred from the third color light emitting layer 133a_3.
  • the holes transported by 133a_3 are blocked.
  • the third material layer 40 can also serve as an electron blocking layer or a hole blocking layer, and the third material layer 40 may play a role similar to that of the first material layer 10 and the second material layer 30 , and details may refer to the description of the first material layer 10 , which will not be repeated here.
  • the third-color light-emitting layer 133a_3 is only disposed in the area where the third light-emitting device 13c is located, or, as shown in FIGS. 2E and 2F , the third-color light-emitting layer 133a_3 includes The third part 133a_31 arranged in the region where the third light emitting device 13c is located, the fourth part 133a_32 arranged in the region where the first light emitting device 13a is located and the fifth part 133a_33 arranged in the area where the second light emitting device 13b is located, and the fourth part 133a_32 is located on the first color light emitting layer 133a_1 or the second color light emitting layer 133a_2 included in the first light emitting device 13a, and is in contact with the first color light emitting layer 133a_1 or the second color light emitting layer 133a_2, and the fifth part 133a_33 is located on the second color light emit
  • the third-color light-emitting layer 133a_3 when the third-color light-emitting layer 133a_3 is only disposed on the area where the third light-emitting device 13a is located, the third-color light-emitting layer 133a_3 has no coverage on the area where the first light-emitting device 13a and the second light-emitting device 13b are located.
  • the material of the third color light emitting layer 133a_3 is relatively similar to the material properties of the first color light emitting layer 133a_1 and the second color light emitting layer 133a_1, such as the material of the third color light emitting layer 133a_3, the first color light emitting layer 133a_1
  • the material of the color luminescent layer 133a_1 and the material of the second color luminescent layer 133a_2 can both be quantum dot luminescent materials. During production, the solubility of the parts of the respective quantum dot luminescent materials that generate electromagnetic radiation are equivalent, and the parts that do not generate electromagnetic radiation have the same solubility.
  • Solubility in solvents of different properties is equivalent, so, by selecting a suitable solvent to dissolve the part of the quantum dot light-emitting material of the third color light-emitting layer 133a_3 that does not generate electromagnetic radiation, the seventh thickness d8 can be controlled to achieve the third color light-emitting layer 133a_3
  • the purpose of the color light emitting layer 133a_3 is to have no coverage or only a small amount of residue in the area where the first light emitting device 13a and the second light emitting device 13b are located.
  • the seventh thickness d8 is a thickness that does not affect the display.
  • the sixth thickness d7 is 20 nm ⁇ 50 nm, and the seventh thickness d8 is less than 5 nm.
  • the first material layer 10 between the part of the first color light emitting layer 133a_1 located in the area where the second light emitting device 13b is located and the second color light emitting layer 133a_2 included in the second light emitting device 13b, and
  • the second material layer 30 is provided between the part of the first-color light-emitting layer 133a_1 located in the area where the third light-emitting device 13c is located and the third-color light-emitting layer 133a_3 included in the third light-emitting device 13c, and the remaining part of the area where the second light-emitting device 13b is located
  • a first isolation layer is formed between the first color light emitting layer 133a_1 and the second color light emitting layer 133a_2, and a second isolation layer is formed between the remaining first color light emitting layer 133a_1 and the third color light emitting layer 133a_3 in the area where the third light emitting device 13c is located.
  • the first isolation layer can serve as the electron blocking layer or the hole blocking layer of the second light emitting device 13b, adjust the recombination region of electrons and holes in the second light emitting device 13b, and avoid electrons and holes remaining in the
  • the first color light-emitting layer 133a_1 of the first color light-emitting layer 133a_1 recombines light, so that it can play a role in preventing color mixing
  • the second spacer layer can also serve as an electron blocking layer or a hole blocking layer of the third light-emitting device 13c, for the third light-emitting device 13c
  • the recombination area of electrons and holes is adjusted to prevent electrons and holes from recombining and emitting light in the remaining first color light emitting layer 133a_1, which can also prevent color mixing.
  • the material of the first color light emitting layer 133a_1 is red quantum dot light emitting material
  • the material of the second color light emitting layer 133a_2 is green quantum dot light emitting material
  • the material of the third color light emitting layer 133a_3 is blue quantum dot light emitting material
  • the above only shows one of the respective arrangement areas of the first color light emitting layer 133a_1, the first material layer 10, the second material layer 30, the second color light emitting layer 133a_2, and the third color light emitting layer 133a_3.
  • the cross-sectional view those skilled in the art can understand that in an actual product, the light-emitting substrate also includes a pixel defining layer, therefore, the cross-sectional view of the actual product may be as shown in FIG. 3 . In FIG.
  • the first material layer 10, the second material layer 30, the second color light emitting layer 133a_2 and the third color light emitting layer 133a_3 can also be the first color light emitting layer 133a_1, the second color light emitting layer 133a_2 and the third color light emitting layer as shown in 1A As shown in the light emitting layer 133a_3, it also includes a part formed outside the opening Q.
  • the area where the first material layer 10 and the second color light emitting layer 133a_2 are located is the area where the second light emitting device 13b is located, and the second material layer 30
  • the area where the third color light emitting layer 133a_3 is disposed is the area where the third light emitting device 13c is located.
  • Some embodiments of the present disclosure provide a method for preparing a light-emitting substrate, including:
  • a plurality of light emitting devices 13 are formed on a substrate 11 .
  • the plurality of light emitting devices includes at least one first light emitting device 13a and at least one second light emitting device 13b.
  • At least one first light emitting device 13a includes: a first color light emitting layer 133a_1 having a first thickness d1
  • at least one second light emitting device 13b includes: a first color light emitting layer 133a_1 having a second thickness d2
  • the first material layer 10 and the second-color light-emitting layer 133a_2 formed on the first-color light-emitting layer 133a_1 included in the second light-emitting device 13b are sequentially stacked in a direction.
  • the second thickness d2 is smaller than the first thickness d1, and in the second light emitting device 13b, the first material layer 10 is configured to transport holes transported from the first color light emitting layer 133a_1 to the second color light emitting layer 133a_2, And block electrons transmitted from the second color light emitting layer 133a_2, or, the first material layer 10 is configured to transmit electrons transmitted from the first color light emitting layer 133a_1 to the second color light emitting layer 133a_2, and block electrons transmitted from the second color light emitting layer 133a_1. The holes transported by the color light emitting layer 133a_2 are blocked.
  • the substrate 11 may be a substrate on which the pixel driving circuit 200 , the pixel defining layer 12 , and a plurality of first electrodes 131 have been formed.
  • the first electrode 131 may be an anode or a cathode.
  • the material of the first electrode 131 may be a transparent oxide semiconductor material, such as ITO, ZnO and other high work function materials.
  • the material of the first electrode 131 may be a low work function material such as Al or Ag.
  • Forming a plurality of light emitting devices 13 on the substrate 11, as shown in FIGS. 4A to 4K , may include:
  • the hole injection layer 133d is formed on the substrate 11 on which a plurality of first electrodes 131 are formed;
  • the electron injection layer 133 e is formed on the substrate 11 of the first electrode 131 .
  • the hole injection layer 133d or the electron injection layer 133e may be formed by evaporation or spin coating.
  • the material of the hole injection layer 133d may include nickel oxide nanoparticles.
  • the material of the electron injection layer 133e may include zinc oxide nanoparticles.
  • the step of forming the first color light emitting layer 133a_1 may include:
  • the first quantum dot luminescent material may be a quantum dot luminescent material with a cross-linkable ligand (such as A ligand: R-2-amino-3-(S-thiobutyl) propionic acid).
  • the quantum dot luminescent material coordinated by the A ligand can be prepared by the oleic acid coordinated quantum dot luminescent material through a ligand exchange reaction.
  • An example of the first quantum dot luminescent material may be a red quantum dot luminescent material.
  • the first quantum dot light-emitting material contained in the part of the second film 300 located in the area where the first light-emitting device 13a is located is cross-linked into a network, thereby changing the area of the second film 300 located in the area where the first light-emitting device 13a is located. partial solubility.
  • the electromagnetic radiation here refers to irradiating the part of the second thin film 300 located in the area where the first light emitting device 13a is located by using electromagnetic waves.
  • electromagnetic waves For example, ultraviolet light may be used to irradiate the part of the second film 300 located in the area where the first light emitting device 13a is located, so that the first quantum dots included in the part of the second film 300 located in the area where the first light emitting device 13a is located emit light
  • the material undergoes a cross-linking reaction to form a network.
  • the first quantum dot luminescent materials included in the part not irradiated by ultraviolet light do not cross-link, or only a small amount of cross-link occurs.
  • an appropriate solvent can be selected to place the second thin film 300 on the first light emitting device. Parts other than the area where 13a is located are dissolved. However, it has been found through experiments that during this process, the part of the second thin film 300 outside the area where the first light-emitting device 13a is located will not be completely dissolved, but will form a residue on the part outside the area where the first light-emitting device 13a is located , that is to form the first color light emitting layer 133a_1 having the second thickness d2.
  • the step of forming the first material layer 10 includes:
  • the material of the first thin film 400 may include an electron transport material or a hole transport material.
  • the material of the first thin film 400 includes an electron transport material
  • the material of the first thin film 400 includes a hole transport material
  • the electron transport material or the hole transport material may be a material whose solubility can be changed under electromagnetic radiation, so that it can be changed according to subsequent changes.
  • the difference in solubility between the solubility fraction and the unaltered solubility fraction completely removes the unaltered solubility fraction.
  • the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • S302. Perform electromagnetic radiation on the part of the first thin film 400 located in the area where the second light emitting device 13b is located to change the solubility of the part of the first film 400 located in the area where the second light emitting device 13b is located.
  • the electron transport material or hole transport material contained in the part of the first thin film 400 located in the region where the second light emitting device 13b is located is cross-linked into a network.
  • ultraviolet light can be used to irradiate the part of the first film 400 located in the area where the second light-emitting device 13b is located, so that the first film 400 is located in the second light-emitting device 13b.
  • the hole transport material contained in the region where the light-emitting device 13b is located undergoes a cross-linking reaction to form a network.
  • no cross-linking occurs between the hole-transporting materials contained in the portion not irradiated by ultraviolet light, or only a small amount of cross-linking occurs.
  • ultraviolet light can be used to irradiate the part of the first film 400 located in the area where the second light-emitting device 13b is located, so that the first film 400 is located in the second light-emitting device 13b.
  • the electron transport material contained in the region where the light emitting device 13b is located undergoes a crosslinking reaction to form a network.
  • the electron transport materials included in the part not irradiated with ultraviolet light do not cross-link, or only a small amount of cross-link occurs.
  • the first solvent can be used to dissolve the part of the first film 400 outside the area where the second light-emitting device 13b is located, so that the first film 400 is located in the second light-emitting device 13b. Parts other than the area where the device 13b is located are completely removed to obtain the first material layer 10 .
  • the second solvent can be used to dissolve the part of the first film 400 outside the area where the second light emitting device 13b is located, so that the first film 400 is located where the second light emitting device 13b is located. Parts outside the region are completely removed to obtain the first material layer 10 .
  • the step of forming the second color light emitting layer 133a_2 may include:
  • the second quantum dot luminescent material may be a quantum dot luminescent material with a cross-linkable ligand (such as A ligand: R-2-amino-3-(S-thiobutyl) propionic acid).
  • the quantum dot luminescent material coordinated by the A ligand can be prepared by the oleic acid coordinated quantum dot luminescent material through a ligand exchange reaction.
  • An example of the second quantum dot luminescent material may be a green quantum dot luminescent material.
  • S402. Apply electromagnetic radiation to the part of the third thin film 500 located in the area where the second light emitting device 13b is located, to change the solubility of the part of the third film 500 located in the area where the second light emitting device 13b is located.
  • the second quantum dot luminescent material contained in the part of the third film 500 located in the region where the second luminescent device 13b is located is cross-linked into a network.
  • ultraviolet light can be used to irradiate the part of the third film 500 located in the area where the second light emitting device 13b is located, so that the third film 500 is located in the area where the second light emitting device 13b is located.
  • the second quantum dot luminescent material contained in the region where the second luminescent device 13b is located undergoes a cross-linking reaction to form a network. No cross-linking occurs between the second quantum dot luminescent materials included in the part not irradiated by ultraviolet light, or only a small amount of cross-linking occurs.
  • an appropriate solvent can be selected to dissolve the third quantum dot luminescent material.
  • the part of the thin film 500 outside the area where the second light emitting device 13b is located is dissolved away. At this time, it was found during the dissolution process that it may be because the material properties of the second color light emitting layer 133a_2 and the first color light emitting layer 133a_1 are relatively similar, and the organic solvent is used to arrange the second color light emitting layer 133a_2 on the second light emitting device.
  • the plurality of light emitting devices 13 further include: at least one third light emitting device 13c, at least one third light emitting device 13c includes a first color light emitting layer 133a_1 having a fifth thickness d5, and The second material layer 30 and the third color light emitting layer 133a_3 disposed on the first color light emitting layer 133a_1 of the third light emitting device 13c are stacked sequentially.
  • the preparation method also includes:
  • the material of the second material layer 30 is different from that of the first material layer 10.
  • the step of forming the second material layer 30 on the substrate 11 includes:
  • the material of the fourth thin film 600 may include an electron transport material or a hole transport material.
  • the material of the fourth thin film 600 includes a hole transport material
  • the material of the fourth thin film 600 includes an electron transport material
  • the electron transport material or the hole transport material can be a material whose solubility can be changed under electromagnetic radiation, so that it can be changed according to subsequent changes.
  • the difference in solubility between the solubility fraction and the unaltered solubility fraction completely removes the unaltered solubility fraction.
  • the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • the electron transport material or hole transport material contained in the part of the fourth thin film 600 located in the region where the third light emitting device 13c is located is cross-linked into a network.
  • the fourth film 600 when the fourth film 600 includes a hole transport material, ultraviolet light can be used to irradiate the part of the fourth film 600 located in the area where the third light-emitting device 13c is located, so that the fourth film 600 is located in the area where the third light-emitting device 13c is located.
  • the hole-transporting material contained in the part of the region undergoes a cross-linking reaction to form a network.
  • no cross-linking occurs between the hole-transporting materials contained in the portion not irradiated by ultraviolet light, or only a small amount of cross-linking occurs.
  • ultraviolet light can be used to irradiate the part of the fourth film 600 located in the region where the third light-emitting device 13c is located, so that the fourth film 600 is located in the third
  • the electron transport material contained in the region where the light emitting device 13c is located undergoes a crosslinking reaction to form a network.
  • the electron transport materials included in the portion not irradiated with ultraviolet light do not cross-link, or only a small amount of cross-link occurs.
  • a third solvent can be used to dissolve the part of the fourth film 600 outside the area where the third light-emitting device 13c is located, so that the fourth film 600 is located in the third light-emitting device 13c. Parts other than the area where the device 13c is located are completely removed to obtain the second material layer 30 .
  • a fourth solvent can be used to dissolve the part of the fourth film 600 outside the area where the third light emitting device 13c is located, so that the fourth film 600 is located where the third light emitting device 13c is located. Parts outside the region are completely removed to obtain the second material layer 30 .
  • the second material layer 30 and the first material layer 10 are connected to form a continuous structure.
  • the step of forming the second material layer 30 on the substrate 11 includes:
  • step S302 While performing step S302) to perform electromagnetic radiation on the part of the first film 400 located in the area where the second light-emitting device 13b is located, electromagnetic radiation is also performed on the part of the first film 400 located in the area where the third light-emitting device 13c is located, to change the first film 400 is the solubility of the part located in the area where the third light emitting device 13c is located. Therefore, the first material layer 10 and the second material layer 30 can be obtained when performing step S303) to remove the part of the first thin film 400 outside the area where the second light emitting device 13b is located.
  • the second material layer 30 and the first material layer 10 are formed through the same patterning process, which can save the number of mask plates.
  • the step of forming the third color light emitting layer 133a_3 on the substrate 11 includes:
  • the third quantum dot luminescent material may be a quantum dot luminescent material with a cross-linkable ligand (such as A ligand: R-2-amino-3-(S-thiobutyl)propionic acid).
  • the quantum dot luminescent material coordinated by the A ligand can be prepared by the oleic acid coordinated quantum dot luminescent material through a ligand exchange reaction.
  • An example of the third quantum dot luminescent material may be a blue quantum dot luminescent material.
  • S505 performing electromagnetic radiation on the part of the fifth film 700 located in the area where the third light emitting device 13c is located, to change the solubility of the part of the fifth film 700 located in the area where the third light emitting device 13c is located.
  • the third quantum dot luminescent material contained in the part of the fifth film 700 located in the region where the third luminescent device 13c is located is cross-linked into a network.
  • the third quantum dot luminescent material as an example of a blue quantum dot luminescent material coordinated by A ligand, ultraviolet light can be used to irradiate the part of the fifth film 700 located in the area where the third light emitting device 13c is located, so that the fifth film 700
  • the third quantum dot luminescent material contained in the area where the third luminescent device 13c is located undergoes a cross-linking reaction to form a network.
  • the third quantum dot luminescent material included in the part not irradiated by ultraviolet light does not have cross-linking, or only a small amount of cross-linking occurs.
  • an appropriate solvent can be selected to convert the fifth The part of the thin film 700 outside the area where the third light emitting device 13c is located is dissolved away.
  • the material properties of the third-color light-emitting layer 133a_3 are similar to those of the first-color light-emitting layer 133a_1 and the second-color light-emitting layer 133a_2.
  • the part outside the area where the third light-emitting device 13c is located is dissolved, it is more beneficial to remove the part of the third-color light-emitting layer 133a_3 formed outside the area where the third light-emitting device 13c is located, so that the third-color light-emitting layer 133a_3 emits light in the third light-emitting area.
  • the area where the device 13c is located has no coverage or only a small amount of residue, and the residue will not affect the display.
  • step S403 due to the difference in material properties between the second color light emitting layer 133a_2 and the second material layer 30 , so that the second color light emitting layer 133a_2 remains on the second material layer 30, so as to obtain the structure shown in step S403 in FIG. 4I.
  • the materials of the second color light emitting layer 133a_2 and the first color light emitting layer 133a_1 are similar, as shown in step S403 in FIG. 4I, the second color light emitting layer 133a_2 is in the first light emitting device 13a is not covered, or, as shown in step S403 in FIG.
  • the second color light emitting layer 133a_2 remains in the area where the first light emitting device 13a is located, and the second color light emitting layer 133a_2 is located in the area where the first light emitting device 13a is located.
  • the thickness of the remaining part is smaller than the thickness of the remaining part of the second color light emitting layer 133a_2 located in the area where the third light emitting device 13c is located.
  • the layer 133a_3 is disposed on the second material layer 30, so that the part of the first color light emitting layer 133a_1 disposed in the area where the third light emitting device 13c is located can avoid emitting light and causing color mixing.
  • the second color light emitting layer 133a_2 is also arranged in the area where the third light emitting device 13c is located.
  • the second color light emitting layer 133a_2 is directly arranged on the third light emitting
  • the third color light emitting layer 133a_3 is formed on the part of the area where the device 13c is located, and the third color light emitting layer 133a_3 is in direct contact with the part of the second color light emitting layer 133a_2 arranged in the area where the third light emitting device 13c is located.
  • the part of the layer 133a_1 disposed in the area where the third light emitting device 13c is located emits light to produce color mixing, but if the part of the second color light emitting layer 133a_2 disposed in the area where the third light emitting device 13c is located emits light, color mixing still occurs.
  • the second-color light-emitting layer 133a_2 also includes a residual portion formed in the region where the third light-emitting device 13c is located (that is, the part where the second-color light-emitting layer 133a_2 is disposed in the region where the third light-emitting device 13c is located ), and the second color light emitting layer 133a_2 is formed in the case where the remaining part of the third light emitting device 13c is located between the second material layer 30 and the third color light emitting layer 133a_3, the third light emitting device 13c also includes The third material layer 40 between the second material layer 30 and the third color light-emitting layer 133a_3; at this time, the preparation method further includes:
  • the step of forming the third material layer 40 includes:
  • the material of the sixth thin film 800 includes electron transport material or hole transport material.
  • the material of the sixth film 800 when the first electrode 131 is an anode, the material of the sixth film 800 includes a hole transport material, and when the first electrode 131 is a cathode, the material of the sixth film 800 includes an electron transfer material.
  • the electron transport material or hole transport material can be a material whose solubility can be changed under electromagnetic radiation, so that it can be changed according to subsequent changes.
  • the difference in solubility between the solubility fraction and the unaltered solubility fraction completely removes the unaltered solubility fraction.
  • the general structural formula of the electron transport material is shown in the following formula (I):
  • A is selected from any of trivalent substituted or unsubstituted electron-withdrawing groups
  • B is selected from groups that can change solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • C is selected from any of trivalent substituted or unsubstituted electron-donating groups
  • D is selected from groups capable of changing solubility under electromagnetic radiation
  • n is an integer greater than or equal to 1
  • the substituted substituent is selected from any of nitro, hydroxy and alkyl.
  • S602. Perform electromagnetic radiation on the part of the sixth film 800 located in the area where the third light emitting device 13c is located, to change the solubility of the part of the sixth film 800 located in the area where the third light emitting device 13c is located.
  • the electron transport material or hole transport material contained in the part of the sixth thin film 800 located in the region where the third light emitting device 13c is located is cross-linked into a network.
  • the electromagnetic radiation on the part of the sixth film 800 located in the area where the third light-emitting device 13c is located can refer to The above description of the part of the first thin film 400 located in the region where the second light emitting device 13b is located to perform electromagnetic radiation will not be repeated here.
  • the third color light emitting layer 133a_3 is formed to obtain structures as shown in FIG. 4L , FIG. 4M and FIG. 4N .
  • the first electrode 131 when the first electrode 131 is an anode, an electron transport layer 133c is formed, and when the first electrode 131 is a cathode, a hole transport layer 133b is formed.
  • the first electrode 131 when the first electrode 131 is an anode, an electron injection layer 133c is formed, and when the first electrode is a cathode, a hole injection layer 133b is formed.
  • the second electrode 132 may cover the entire layer.
  • the second electrode 132 when the first electrode 131 is an anode, the second electrode 132 is a cathode, and when the first electrode 131 is a cathode, the second electrode 132 is an anode.
  • the material of the encapsulation layer may be ultraviolet curable glue, and under the excitation of ultraviolet light, the ultraviolet curable glue is cured to encapsulate the light-emitting device.
  • the above is only an example of forming the quantum dot luminescent material on the substrate 11 of the hole injection layer 133d or the electron injection layer 133e.
  • hole transport layer 133b or electron transport layer 133c can also be formed before forming quantum dot luminescent material, and the same technical effect can be achieved by selecting appropriate materials as the first material layer 10 and the second material layer 30 , which will not be repeated here.
  • the material of the hole transport layer 133b can be selected from TFB (Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), poly(9,9-dioctylfluorene-CO-N-( 4-butylphenyl)diphenylamine)), NPB(N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine, N,N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine), 2,4,6-tris[3-(diphenylphosphinooxy)phenyl]-1 ,3,5-triazole, 4,4',4"-tris[N-(naphthalen-2-yl)-N-phenyl-amino)]triphenylamine, tris[2,4,
  • the quantum dots in the above-mentioned quantum dot luminescent materials are usually semiconductor nanocrystals, and the semiconductor forming the semiconductor nanocrystals may include group IV elements, II-VI group compounds, II-V group compounds, III-VI group compounds , III-V compounds, IV-VI compounds, III compounds. II-IV-VI compounds, II-IV-V compounds, alloys including any of the foregoing and/or mixtures comprising any of the foregoing, including ternary and quaternary mixtures or alloys. Wherein, the quantum dot luminescent material may also have a core-shell structure.
  • each coordination group M is selected from one of sulfur-containing groups, nitrogen-containing groups and oxygen-containing groups.
  • each coordinating group may be a mercapto group, an amino group, or a hydroxyl group.
  • the quantum dots in the quantum dot luminescent material include one or more of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgTe, InP, CuInS, CuInSe, CuInSeS and AgInS.
  • the quantum dots in the quantum dot luminescent material may also have a core-shell structure.
  • the core may include one or more of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgTe, InP, CuInS, CuInSe, CuInSeS and AgInS.
  • the shell may be a semiconductor material having a different composition than the core, wrapping around the core.
  • quantum dots with a core-shell structure include CdS/ZnS, CdSe/ZnS, CdSe/ZnSeS, CdSe/CdS, ZnSe/ZnS, InP/ZnS, CuInS/ZnS, (Zn)CuInS /ZnS, (Mn)CuInS/ZnS, AgInS/ZnS, (Zn)AgInS/ZnS, CuInSe/ZnS, CuInSeS/ZnS or PbS/ZnS, etc.
  • the core is before “/”
  • the shell is after "/”.
  • the quantum dots in the quantum dot luminescent material may also have ligands. At this point, the ligand binds to the quantum dot.
  • the surface of the quantum dot may have defect sites or places not covered by ligands, so that the coordinating group M can coordinate with the quantum dot.
  • the quantum dots of the red quantum dot luminescent material, the green quantum dot luminescent material and the blue quantum dot luminescent material are all cadmium selenide/zinc sulfide core-shell structures, and the ligands are A ligands ( That is, R-2-amino-3-(S-thiobutyl)propionic acid) will be described as an example.
  • Each quantum dot luminescent material is obtained by ligand exchange reaction.
  • Comparative Example 1 prepared a "upright" bottom-emission light-emitting substrate, and the specific preparation method was as follows:
  • ITO Indium Tin Oxides, indium tin oxide
  • Step 2 Spin-coat the solution of red quantum dot luminescent material in air (rotating speed of spin-coating 3000rpm, time 30s), wherein add 5% wt of 2,4-bis(trichloromethyl)-6-p-methoxy Styryl-S-triazine is used as a photoacid generator.
  • UV (ultraviolet, ultraviolet) exposure is 150mj (the energy used during exposure is 150mj).
  • the film layer is developed with chloroform, and the development is completed.
  • a red quantum dot film layer (HOMO is about -5.9ev, LUMO is about -3.9ev) is formed.
  • the thickness of the red quantum dot film layer is 20nm in the area where the red light emitting device
  • the thickness of the region where the light-emitting device for emitting light and the light-emitting device for emitting blue light are located is 10 nm.
  • Step 3 Spin-coat the solution of green quantum dot luminescent material in the air (rotating speed of spin-coating 3000rpm, time 30s), wherein add 5% wt of 2,4-bis(trichloromethyl)-6-p-methoxy Styryl-S-triazine is used as a photoacid generator. After spin coating, UV exposure is 150mj. After exposure, the film layer is developed with chloroform. After the development is completed, it is annealed at 120°C for 20 minutes to form a patterned green quantum dot film layer.
  • the thickness of the green quantum dot film layer is about 25nm in the area where the light-emitting device that emits green light is located. There is almost no residue in the area where the light-emitting device of the blue light is located.
  • Step 4) Spin-coat the solution of blue quantum dot luminescent material in the air (3000rpm spin-coating speed, 30s time), add 5%wt of 2,4-bis(trichloromethyl)-6-p-methoxy Styryl-S-triazine is used as photoacid generator. After spin coating, UV exposure is 150mj. After exposure, the film layer is developed with chloroform. After development, it is annealed at 120°C for 20min to form patterned blue quantum dots.
  • the film layer (the HOMO energy level is about -6.2eV, and the LUMO energy level is about -3.57eV), the thickness of the blue quantum dot film layer is about 25nm in the area where the light-emitting device that emits blue light The light-emitting device and the area where the green-emitting light-emitting device is located have almost no residue.
  • Step 5 spin-coating zinc oxide nanoparticles (rotational speed of spin coating 3000rpm, time 30s, concentration of zinc oxide nanoparticles 30mg/ml), annealing at 120°C for 20min to obtain an electron injection layer.
  • Step 6 Evaporate an aluminum electrode (cathode) with a thickness of 120 nm, and obtain a light-emitting substrate after packaging.
  • the preparation method of each step in Experimental Example 1 is basically the same as the preparation method of each step in Comparative Example 1. The difference is that between step 2) and step 3), a space is added to the area where the light-emitting device that emits green light is located.
  • the first step of the hole transport pattern is to form the above-mentioned first material layer 10 .
  • step 3) and step 4 add the step of forming the hole transport pattern 2 in the area where the light-emitting device emitting blue light is located, to form the above-mentioned second material layer 30 .
  • step 2) the chlorobenzene solution of hole transport material B1 is spin-coated, the concentration of hole transport material B1 is 15mg/ml, the rotating speed of spin coating is 2500rpm, and the HOMO energy level of hole transport material B1 is about It is about -5.8ev.
  • step 2) use 365nm ultraviolet light to expose the hole transport material (the energy used in the exposure is 50mj).
  • use chlorobenzene to develop the film layer.
  • the set Hole transport pattern one in the area where the light-emitting device emitting green light is located.
  • step 3 spin coating hole transport material B2 chlorobenzene solution, the concentration of hole transport material B2 is 15mg/ml, the rotating speed of spin coating is 2500rpm, the HOMO energy level of hole transport material B2 is about-5.9ev about.
  • use 365nm for exposure the energy used during exposure is 50mj.
  • use chlorobenzene to develop the film layer.
  • the holes set in the area where the light-emitting device emitting blue light Transfer pattern two.
  • the preparation method of each step in Experimental Example 2 is basically the same as the preparation method of each step in Experimental Example 1. The difference is that the chlorobenzene solution of the hole transport material C1 is used for the preparation of the hole transport pattern 1, and the hole transport material C1 The HOMO energy level is about -5.8ev.
  • the chlorobenzene solution of the hole transport material C2 is used in the preparation of the hole transport pattern 2, and the HOMO energy level of the hole transport material C2 is about -5.95 eV.
  • the preparation method of each step in Comparative Example 2 is basically the same as the preparation method of each step in Comparative Example 1. The difference is that what is prepared in Comparative Example 2 is a "upright" type top-emitting light-emitting substrate, and the anode in step 1) uses In the stack structure of ITO/Ag/ITO, in step 6), indium gallium zinc oxide (IGZO, indium gallium zinc oxide) is sputtered as a cathode with a thickness of 50nm.
  • IGZO indium gallium zinc oxide
  • the preparation method of each step in Experimental Example 3 is basically the same as the preparation method of each step in Comparative Example 1. The difference is that between step 2) and step 3), a space is added to the area where the light-emitting device that emits green light is located.
  • the first step of the hole transport pattern is to form the above-mentioned first material layer 10 .
  • step 3) and step 4 add the step of forming the hole transport pattern 2 in the area where the light-emitting device emitting blue light is located, to form the above-mentioned second material layer 30 .
  • hole transport pattern 1 and hole transport pattern 2 can refer to the description in Experimental Example 1 above, and will not be repeated here.
  • Comparative Example 3 The preparation method of each step in Comparative Example 3 is basically the same as the preparation method of each step in Comparative Example 1. The difference is that Comparative Example 3 also adds the step of preparing a hole transport layer between step 1) and step 2), specifically Yes, after step 1), spin-coat the chlorobenzene solution of cross-linked TFB (concentration 10mg/ml, containing 5% cross-linking agent, spin-coating speed 2000rpm, time 30s), and use 365nm UV light after spin-coating Irradiate 300mj to form a hole transport layer, and anneal at 170°C for 15min.
  • cross-linked TFB concentration 10mg/ml, containing 5% cross-linking agent, spin-coating speed 2000rpm, time 30s
  • 365nm UV light after spin-coating Irradiate 300mj to form a hole transport layer
  • anneal at 170°C for 15min anneal at 170°C for 15min.
  • TFB The structural formula of TFB is as follows:
  • the preparation method of each step in Experimental Example 4 is basically the same as the preparation method of each step in Comparative Example 1. The difference is that between step 2) and step 3), a space is added to the area where the light-emitting device that emits green light is located.
  • the first step of the hole transport pattern is to form the above-mentioned first material layer 10 .
  • step 3) and step 4 add the step of forming the hole transport pattern 2 in the area where the light-emitting device emitting blue light is located, to form the above-mentioned second material layer 30 .
  • hole transport pattern 1 and hole transport pattern 2 can refer to the description in Experimental Example 1 above, and will not be repeated here.
  • Comparative Example 4 prepared an "inverted" bottom-emitting light-emitting substrate, and the specific preparation method is as follows:
  • Step 1) on the ITO substrate formed with the ITO electrode as the substrate of the negative electrode
  • spin-coat zinc oxide nanoparticles (rotating speed 2000rpm of spin coating, time 30s, the concentration 25mg/ml of zinc oxide nanoparticles) in air, 120 °C annealing for 10 min to form an electron injection layer on the ITO substrate.
  • Step 2), step 3) and step 4) can refer to the preparation methods of step 2), step 3) and step 4) in the above comparative example 1, and will not be repeated here.
  • Step 5 preparing a hole transport layer and a hole injection layer by vapor deposition.
  • Step 6 Evaporate a silver electrode as an anode with a thickness of 120 nm, and obtain a light-emitting substrate after packaging.
  • the preparation method of each step in Experimental Example 5 is basically the same as the preparation method of each step in Comparative Example 4. The difference is that between step 2) and step 3), electrons formed in the region where the light-emitting device that emits green light is added. In the first step of transferring the pattern, the above-mentioned first material layer 10 is formed. And between step 3) and step 4), add the step of forming electron transport pattern 2 in the region where the light-emitting device emitting blue light is located, to form the above-mentioned second material layer 30 .
  • step 2) the chlorobenzene solution of the electron transport material D1 is spin-coated, the concentration of the electron transport material D1 is 15 mg/ml, the rotational speed of the spin coating is 2500 rpm, and the LUMO energy level of the electron transport material D1 is about -3.4 About eV, after the spin coating is completed, use 365nm ultraviolet light to expose the electron transport material D1 (the energy used during exposure is 50mj). After the exposure is completed, use chlorobenzene to develop the film layer. The electron transport pattern of the region where the light-emitting device is located.
  • step 3 spin-coat the chlorobenzene solution of the electron-transport material D1, the concentration of the electron-transport material D1 is 15 mg/ml, the spin-coating speed is 2500 rpm, and the LUMO energy level of the electron-transport material D1 is about -3.4eV.
  • the spin coating is completed, use 365nm for exposure (the energy used during exposure is 50mj).
  • D1 The structure of D1 is as follows:
  • Step 1) Put dibromotriphenylamine (1mmol) and bis-pinacol diboron (1.05mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heat up to 100 degrees under the protection of argon for reflux reaction for 12 hours, after the reaction is completed, pour into water to precipitate, filter and use dichloromethane and water for Extraction, three extractions followed by filtration using column chromatography to obtain the product (1).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 2 Dibromotriphenylamine (1mmol) and product (1) (1.05mmol) were placed in a 250ml three-necked flask, sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and 100ml toluene were added. React at 90°C for 12 hours under air protection. After the reaction is completed, pour into water to precipitate. After filtration, use dichloromethane and water to extract. After three extractions, use column chromatography to filter to obtain the product (2).
  • Step 3 Put the product (2) (1 mmol) and N-bromosuccinimide (NBS, 1.2 mmol) in a three-necked flask, add 100 ml of N, N-dimethylformamide, and react at room temperature for 24 hours, After pouring into water for precipitation, use a Soxhlet extractor and toluene to remove excess NBS, and then obtain product (3) by polymer column chromatography.
  • NBS N-bromosuccinimide
  • Step 4) put the product (3) (1mmol) and double pinacol diboron (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heated to 100°C under the protection of argon for reflux reaction for 12 hours, poured into water to precipitate after the reaction was completed, and used Soxhlet extractor and toluene The double-linked pinacol diboron is removed, and then the product (4) is obtained by polymer column chromatography.
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 5 Put the product (4) (1mmol) and vinyl bromide (1.1mmol) in a 250ml three-necked flask, add sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and 100ml toluene. React under protection at 90°C for 12 hours. After the reaction is completed, pour into water to precipitate, use a Soxhlet extractor and toluene to remove excess vinyl bromide, and then obtain the product (5) by polymer column chromatography.
  • Step 1) Put dibromotriphenylamine (1mmol) and bis-pinacol diboron (1.05mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heat up to 100 degrees under the protection of argon for reflux reaction for 12 hours, after the reaction is completed, pour into water to precipitate, filter and use dichloromethane and water for Extraction, three extractions followed by filtration using column chromatography to obtain the product (1).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 2 Dibromotriphenylamine (1mmol) and product (1) (1.05mmol) were placed in a 250ml three-necked flask, sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and 100ml toluene were added. React at 90°C for 12 hours under air protection. After the reaction is completed, pour into water to precipitate. After filtration, use dichloromethane and water to extract. After three extractions, use column chromatography to filter to obtain the product (2).
  • Step 3 Put the product (2) (1 mmol) and N-bromosuccinimide (NBS, 1.2 mmol) in a three-necked flask, add 100 ml of N, N-dimethylformamide, and react at room temperature for 24 hours, After pouring into water for precipitation, use a Soxhlet extractor and toluene to remove excess NBS, and then obtain product (3) by polymer column chromatography.
  • NBS N-bromosuccinimide
  • Step 4) Put the product (3) (1mmol) and acrylic acid (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100ml N,N-dimethylformamide (DMF), and raise the temperature under the protection of argon Reflux at 100°C for 12 hours. After the reaction is completed, pour into water to precipitate, use a Soxhlet extractor and toluene to remove excess acrylic acid, and then obtain the product (4) by polymer column chromatography.
  • potassium hydroxide 100ml N,N-dimethylformamide (DMF)
  • Step 1) Put 2,2'-dinitrodiphenylamine (1mmol) and vinyl bromide (1.1mmol) in a 250ml three-neck flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF ), under the protection of argon, the temperature was raised to 100 degrees for reflux reaction for 12 hours. After the reaction was completed, it was poured into water to precipitate, and after filtration, it was extracted with dichloromethane and water. After three extractions, it was filtered by column chromatography to obtain the product (1) .
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF )
  • Step 2 Put the product (1) (1 mmol) and N-bromosuccinimide (NBS, 1.2 mmol) in a three-necked flask, add 100 ml of N, N-dimethylformamide, and react at room temperature for 24 hours, After pouring into water to precipitate, filter and extract with dichloromethane and water, extract three times and then filter with column chromatography to obtain the product (2).
  • NBS N-bromosuccinimide
  • Step 3 Put the product (2) (1mmol) and double pinacol diboron (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heat up to 100 degrees under the protection of argon for reflux reaction for 12 hours, after the reaction is completed, pour into water to precipitate, filter and use dichloromethane and water for Extraction, extraction three times followed by filtration using column chromatography to obtain the product (3).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 4) Place product (2) (1mmol) and product (3) (1.05mmol) in a 250ml three-necked flask, add sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and after 100ml toluene, React under air protection at 90°C for 12 hours. After the reaction is completed, pour it into water to precipitate. After filtering, use a Soxhlet extractor and toluene to remove excess monomer reactants, and then obtain the product (4) by polymer column chromatography.
  • Step 1) Put bis(4-bromophenyl)amine (1mmol) and vinyl bromide (1.1mmol) in a 250ml three-neck flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF) , under the protection of argon, the temperature was raised to 100 degrees for reflux reaction for 12 hours. After the reaction was completed, it was poured into water to precipitate, and after filtration, it was extracted with dichloromethane and water. After extraction three times, it was filtered by column chromatography to obtain the product (1).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • Step 2 Put the product (1) (1mmol) and double pinacol diboron (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heat up to 100 degrees under the protection of argon for reflux reaction for 12 hours, after the reaction is completed, pour into water to precipitate, filter and use dichloromethane and water for Extraction, after three extractions and filtration using column chromatography, the product (2) is obtained.
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 3) put product (1) (1mmol) and product (2) (1.05mmol) in 250ml there-necked flask, add sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, after 100ml toluene, in argon React under air protection at 90°C for 12 hours. After the reaction is completed, pour it into water to precipitate. After filtering, use a Soxhlet extractor and toluene to remove excess monomer reactants, and then obtain the product (3) by polymer column chromatography.
  • Step 1) Put the product p-dibromobenzene (1mmol) and double pinacol diboron (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF) , 0.1g 1,1'-bisdiphenylphosphinoferrocene palladium dichloride, heated to 100 degrees under the protection of argon for reflux reaction for 12 hours, poured into water to precipitate after the reaction was completed, filtered and used dichloromethane and water Extraction was carried out, followed by three extractions followed by filtration using column chromatography to obtain the product (1).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF dimethylformamide
  • 0.1g 1,1'-bisdiphenylphosphinoferrocene palladium dichloride heated to 100 degrees under the protection of argon for reflux reaction for 12 hours, poured into water to precipitate
  • Step 2 Put the product (1) (1mmol) and vinyl bromide (1.05mmol) in a 250ml three-necked flask, add sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and 100ml toluene. React under protection at 90°C for 12 hours. After the reaction is completed, pour into water to precipitate, filter and extract with dichloromethane and water, extract three times and use column chromatography to filter to obtain the product (2).
  • Step 3 Put the product (2) (1mmol) and concentrated nitric acid (4mmol) in a 250ml three-necked flask, add concentrated sulfuric acid (2mmol), and react at 60°C for 12 hours under the protection of argon. After the reaction is completed, pour it into water to precipitate , filtered and then extracted with dichloromethane and water, extracted three times and then filtered by column chromatography to obtain the product (3).
  • Step 4) Place benzimidazole (1mmol) and N-bromosuccinimide (NBS, 1.2mmol) in a three-necked flask, add 100ml N,N-dimethylformamide, react at room temperature for 24 hours, pour After precipitation in water, filter and extract with dichloromethane and water, extract three times and then filter with column chromatography to obtain the product (4).
  • Step 5 Put the product (4) (1mmol) and double pinacol diboron (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), 0.1g of 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride, heat up to 100 degrees under the protection of argon for reflux reaction for 12 hours, after the reaction is completed, pour into water to precipitate, filter and use dichloromethane and water for Extraction, followed by three extractions and filtration using column chromatography, yields the product (5).
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)
  • DMF 1,1'-bisdiphenylphosphinoferrocenepalladium dichloride
  • Step 6 Put the product (4) (1mmol) and the product (5) (1.05mmol) in a 250ml three-necked flask, add sodium carbonate (1.05mmol), tetrakistriphenylphosphine palladium 0.1g, and 100ml toluene. React under air protection at 90°C for 12 hours. After the reaction is completed, pour it into water to precipitate. After filtering, use a Soxhlet extractor and toluene to remove excess monomer reactants, and then obtain the product (6) by polymer column chromatography.
  • Step 7) Put the product (6) (1mmol) and the product (3) (1.1mmol) in a 250ml three-necked flask, add 1.2mmol potassium hydroxide, 100mlN,N-dimethylformamide (DMF), under argon Under protection, the temperature was raised to 100 degrees for reflux reaction for 12 hours. After the reaction was completed, it was poured into water to precipitate, and the excess dinitro-p-bromostyrene was removed using a Soxhlet extractor and toluene, and the product (7) was obtained by polymer column chromatography .
  • potassium hydroxide 100mlN,N-dimethylformamide (DMF)

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Abstract

一种发光基板，包括：衬底；设置于衬底上的多个发光器件，多个发光器件包括：至少一个第一发光器件和至少一个第二发光器件，至少一个第一发光器件包括：具有第一厚度的第一颜色发光层，至少一个第二发光器件包括具有第二厚度的所述第一颜色发光层，以及沿远离衬底的方向依次层叠设置在第二发光器件所包含的第一颜色发光层上的第一材料层和第二颜色发光层；其中，第二厚度小于第一厚度；且第一材料层被配置为将从第一颜色发光层传输的空穴传输至第二颜色发光层，并对从第二颜色发光层传输的电子进行阻挡，或者，第一材料层被配置为将从第一颜色发光层传输的电子传输至第二颜色发光层，并对从第二颜色发光层传输的空穴进行阻挡。

Description

发光基板及其制备方法和发光装置 技术领域
本公开涉及照明和显示技术领域，尤其涉及一种发光基板及其制备方法和发光装置。
背景技术
相对于OLED(Organic Light-Emitting Diode，有机发光二极管)发光器件来说，QLED(Quantum Dot Light Emitting Diodes，量子点发光二极管)发光器件具有理论发光效率更高、颜色可调、色域更广、色彩饱和度和鲜艳度更好、能耗成本更低等优点。
发明内容
一方面，提供一种发光基板，包括：衬底；设置于所述衬底上的多个发光器件，所述多个发光器件包括：至少一个第一发光器件和至少一个第二发光器件，所述至少一个第一发光器件包括：具有第一厚度的第一颜色发光层，所述至少一个第二发光器件包括具有第二厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠设置在所述第二发光器件所包含的所述第一颜色发光层上的第一材料层和第二颜色发光层；其中，所述第二厚度小于所述第一厚度；且在所述第二发光器件中，所述第一材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的电子进行阻挡，或者，所述第一材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的空穴进行阻挡。
在一些实施例中，所述至少一个第二发光器件还包括：设置于所述第二发光器件所包含的所述第一颜色发光层靠近所述衬底一侧的电子传输层，所述第一材料层的材料包括具有电子传输功能的材料；或者，所述至少一个第二发光器件还包括：设置于所述第二发光器件所包含的所述第一颜色发光层靠近所述衬底一侧的空穴传输层，所述第一材料层的材料包括具有空穴传输功能的材料。
在一些实施例中，在所述至少一个第二发光器件还包括电子传输层的情况下，所述第一材料层的材料与所述电子传输层的材料不同；在所述至少一个第二发光器件还包括空穴传输层的情况下，所述第一材料层的材料与所述空穴传输层的材料不同。
在一些实施例中，所述第二颜色发光层仅设置在所述第二发光器件所在 区域；或者，所述第二颜色发光层包括设置在所述第二发光器件所在区域的第一部分和设置在所述第一发光器件所在区域的第二部分，所述第二部分位于所述第一发光器件所包含的第一颜色发光层之上，且与所述第一颜色发光层接触，所述第一部分具有第三厚度，所述第二部分具有第四厚度，所述第四厚度小于所述第三厚度。
在一些实施例中，所述第四厚度小于所述第二厚度。
在一些实施例中，所述第一颜色发光层的材料和所述第二颜色发光层的材料均包括量子点发光材料。
在一些实施例中，所述多个发光器件还包括：至少一个第三发光器件；所述至少一个第三发光器件包括：具有第五厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠设置于所述第三发光器件所包含的所述第一颜色发光层之上的第二材料层和第三颜色发光层，其中，所述第五厚度小于所述第一厚度，且在所述第三发光器件中，所述第二材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的电子进行阻挡，或者，所述第二材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的空穴进行阻挡。
在一些实施例中，所述第二材料层和所述第一材料层连接为连续的结构。
在一些实施例中，在所述第二颜色发光层包括第一部分和第二部分的情况下，所述第二颜色发光层还包括设置在所述第三发光器件所在区域的第三部分，且所述第三部分位于所述第二材料层和所述第三颜色发光层之间。
在一些实施例中，所述第三发光器件还包括第三材料层，所述第三材料层位于所述第三部分和所述第三颜色发光层之间，所述第三材料层被配置为将从所述第三部分传输的空穴传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的电子进行阻挡，或者，所述第二材料层被配置为将从所述第三部分传输的电子传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的空穴进行阻挡。
在一些实施例中，所述第二材料层的材料和所述第一材料层的材料不同。
在一些实施例中，所述第三颜色发光层仅设置在所述第三发光器件所在区域；或者，所述第三颜色发光层包括设置在所述第三发光器件所在区域的第三部分，以及设置在所述第一发光器件所在区域的第四部分和设置在所述第二发光器件所在区域的第五部分，且所述第四部分位于所述第一发光器件所包含的第一颜色发光层或第二颜色发光层之上，且与所述第一颜色发光层 或所述第二颜色发光层接触，所述第五部分位于所述第二发光器件所包含的第二颜色发光层之上，且与所述第二颜色发光层接触，所述第三部分具有第六厚度，所述第四部分和所述第五部分具有第七厚度，所述第七厚度小于所述第六厚度。
在一些实施例中，所述第三颜色发光层的材料包括量子点发光材料。
在一些实施例中，所述第一材料层通过至少一种电子传输材料在电磁辐射下制备获得；所述电子传输材料的结构通式如下式(I)所示：
Figure PCTCN2021118275-appb-000001
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种；
或者，所述第一材料层通过至少一种电子传输材料在电磁辐射下制备获得；所述空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000002
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
另一方面，提供一种发光装置，包括：如上所述的发光基板。
再一方面，提供一种发光基板的制备方法，包括：
在衬底上形成多个发光器件，所述多个发光器件包括至少一个第一发光器件和至少一个第二发光器件；所述至少一个第一发光器件包括：具有第一厚度的第一颜色发光层，所述至少一个第二发光器件包括具有第二厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠形成在所述第二发光器件所包含的所述第一颜色发光层上的第一材料层和第二颜色发光层；其中，所述第二厚度小于所述第一厚度；且在所述第二发光器件中，所述第一材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第二颜色发 光层，并对从所述第二颜色发光层传输的电子进行阻挡，或者，所述第一材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的空穴进行阻挡。
在一些实施例中，形成所述第一材料层的步骤包括：
在形成有第一颜色发光层的衬底上形成第一薄膜；对所述第一薄膜进行图案化，以在所述第二发光器件所在区域形成所述第一材料层。
在一些实施例中，对所述第一薄膜进行图案化，包括：
对所述第一薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，改变所述第一薄膜位于所述第二发光器件所在区域的部分的溶解度；对所述第一薄膜位于所述第二发光器件所在区域以外的部分进行溶解，将所述第一薄膜位于所述第二发光器件所在区域以外的部分去除。
在一些实施例中，所述第一薄膜的材料为电子传输材料或空穴传输材料；所述电子传输材料的结构通式如下式如下式(I)所示：
Figure PCTCN2021118275-appb-000003
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种。
所述空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000004
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
在一些实施例中，形成所述第一颜色发光层的步骤包括：
在所述衬底上形成第二薄膜，所述第二薄膜的材料包括第一量子点发光材料；对所述第二薄膜位于所述第一发光器件所在区域的部分进行电磁辐射，改变所述第二薄膜位于所述第一发光器件所在区域的部分的溶解度；对所述 第二薄膜位于所述第一发光器件所在区域以外的部分进行溶解，得到所述第一发光器件所包含的具有第一厚度的所述第一颜色发光层和所述第二发光器件所包含的具有第二厚度的所述第一颜色发光层。
在一些实施例中，形成所述第二颜色发光层的步骤包括：
在形成有所述第一材料层的衬底上形成第三薄膜，所述第三薄膜包括第二量子点发光材料；对所述第三薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，改变所述第三薄膜位于所述第二发光器件所在区域的部分的溶解度；对所述第三薄膜位于所述第二发光器件所在区域以外的部分进行溶解，使所述第三薄膜在所述第二发光器件所在区域以外的区域无覆盖，或者，，使所述第三薄膜在所述第二发光器件所在区域以外的区域形成厚度小于5nm的残留部。
在一些实施例中，所述发光基板还包括：至少一个第三发光器件，所述至少一个第三发光器件包括具有第五厚度的第一颜色发光层，以及沿远离衬底的方向依次层叠设置于所述第三发光器件所包含的所述第一颜色发光层之上的第二材料层和第三颜色发光层，所述制备方法还包括：在衬底上依次形成所述第二材料层和所述第三颜色发光层的步骤。
在一些实施例中，所述第二材料层的材料和所述第一材料层的材料不同，在衬底上形成所述第二材料层的步骤包括：
在形成有所述第二颜色发光层的衬底上形成第四薄膜；对所述第四薄膜进行图案化，有以在所述第三发光器件所在区域形成所述第二材料层。
在一些实施例中，所述对所述第四薄膜进行图案化，包括：
对所述第四薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第四薄膜位于所述第三发光器件所在区域的部分的溶解度；对所述第四薄膜位于所述第三发光器件所在区域以外的部分进行溶解，将所述第四薄膜位于所述第三发光器件所在区域以外的部分去除。
在一些实施例中，所述第二材料层和所述第一材料层连接成连续的结构，在衬底上形成所述第二材料层的步骤包括：
在对所述第一薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，的同时，还对所述第一薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第一薄膜位于所述第三发光器件所在区域的部分的溶解度。
在一些实施例中，在衬底上形成所述第三颜色发光层的步骤包括：
在形成有所述第二材料层的衬底上形成第五薄膜，所述第五薄膜包括第三量子点发光材料；对所述第五薄膜位于所述第三发光器件所在区域的部分 进行电磁辐射，改变所述第五薄膜位于所述第三发光器件所在区域的部分的溶解度；对所述第五薄膜位于所述第三发光器件所在区域以外的部分进行溶解，使所述第五薄膜在所述第三发光器件所在区域以外的部分无覆盖，或者，使所述第五薄膜在所述第三发光器件所在区域以外的区域形成厚度小于5nm的残留部。
在一些实施例中，在所述第二颜色发光层还包括形成在所述第三发光器件所在区域的残留部，且所述第二颜色发光层形成在所述第三发光器件所在区域的残留部位于所述第二材料层和所述第三颜色发光层之间的情况下，所述第三发光器件还包括设置于所述第二材料层和所述第三颜色发光层之间的第三材料层；所述制备方法还包括：
在形成所述第三颜色发光层的步骤之前，形成所述第三材料层。
在一些实施例中，形成所述第三材料层的步骤包括：
在形成有所述第二颜色发光层的衬底上形成第六薄膜，对所述第六薄膜进行图案化，以在所述第三发光器件所在区域形成所述第三材料层。
在一些实施例中，所述对所述第六薄膜进行图案化，包括：
对所述第六薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第六薄膜位于所述第三发光器件所在区域的部分的溶解度；对所述第六薄膜位于所述第三发光器件所在区域以外的部分进行溶解，将所述第六薄膜位于所述第三发光器件所在区域以外的部分去除。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1A为根据一些实施例的一种发光基板的剖视结构图；
图1B为根据一些实施例的一种发光基板的俯视结构图；
图1C为根据一些实施例的一种3T1C的等效电路图；
图2A为根据一些实施例的另一种发光基板的剖视结构图；
图2B为根据一些实施例的另一种发光基板的剖视结构图；
图2C为根据一些实施例的另一种发光基板的剖视结构图；
图2D为根据一些实施例的另一种发光基板的剖视结构图；
图2E为根据一些实施例的另一种发光基板的剖视结构图；
图2F为根据一些实施例的另一种发光基板的剖视结构图；
图3为根据一些实施例的另一种发光基板的剖视结构图；
图4A为根据一些实施例的一种发光基板的制备方法的一部分的流程图；
图4B为根据一些实施例的一种发光基板的制备方法的另一部分的流程图；
图4C为根据一些实施例的另一种发光基板的制备方法的另一部分的流程图；
图4D为根据一些实施例的一种发光基板的制备方法的另一部分的流程图；
图4E为根据一些实施例的另一种发光基板的制备方法的另一部分的流程图；
图4F为根据一些实施例的一种发光基板的制备方法的另一部分的流程图；
图4G为根据一些实施例的另一种发光基板的制备方法的另一部分的流程图；
图4H为根据一些实施例的一种发光基板的制备方法的另一部分的流程图；
图4I为根据一些实施例的另一种发光基板的制备方法的另一部分的流程图；
图4J为根据一些实施例的一种发光基板的制备方法的另一部分的流程图；
图4K为根据一些实施例的另一种发光基板的制备方法的另一部分的流程图；
图4L为根据一些实施例的另一种发光基板的剖视结构图；
图4M为根据一些实施例的另一种发光基板的剖视结构图；
图4N为根据一些实施例的另一种发光基板的剖视结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包 含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
另外，“基于”的使用意味着开放和包容性，因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层和区域的厚度。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
本公开的一些实施例提供了发光装置，该发光装置包括发光基板，当然还可以包括其他部件，例如可以包括用于向发光基板提供电信号，以驱动该发光基板发光的电路，该电路可以称为控制电路，可以包括与发光基板电连接的电路板和/或IC(Integrate Circuit，集成电路)。
在一些实施例中，该发光装置可以为照明装置，此时，发光装置用作光源，实现照明功能。例如，发光装置可以是液晶显示装置中的背光模组，用 于内部或外部照明的灯，或各种信号灯等。
在另一些实施例中，该发光装置可以为显示装置，此时，该发光基板为显示基板，用于实现显示图像(即画面)功能。发光装置可以包括显示器或包含显示器的产品。其中，显示器可以是平板显示器(Flat Panel Display，FPD)，微型显示器等。若按照用户能否看到显示器背面的场景划分，显示器可以是透明显示器或不透明显示器。若按照显示器能否弯折或卷曲，显示器可以是柔性显示器或普通显示器(可以称为刚性显示器)。示例的，包含显示器的产品可以包括：计算机显示器，电视，广告牌，具有显示功能的激光打印机，电话，手机，个人数字助理(Personal Digital Assistant，PDA)，膝上型计算机，数码相机，便携式摄录机，取景器，车辆，大面积墙壁，剧院的屏幕或体育场标牌等。
本公开的一些实施例提供了一种发光基板1，如图1A和图1B所示，该发光基板1包括衬底11、设置在衬底11上的像素界定层12和多个发光器件13。其中，该像素界定层12具有多个开口Q，多个发光器件13可以与多个开口Q一一对应设置。这里的多个发光器件13可以是发光基板1包含的全部或部分发光器件13；多个开口Q可以是像素界定层12上的全部或部分开口。
每个发光器件13可以包括第一电极131、第二电极132，以及设置于第一电极131和第二电极132之间的发光功能层133，该发光功能层133包括发光层。
在一些实施例中，该第一电极131可以为阳极，此时，该第二电极132为阴极。在另一些实施例中，该第一电极131可以为阴极，此时，该第二电极132为阳极。
该发光器件13的发光原理为：通过阳极和阴极连接的电路，利用阳极向发光功能层133注入空穴，阴极向发光功能层133注入电子，所形成的电子和空穴在发光层中形成激子，激子通过辐射跃迁回到基态，发出光子。
如图1A所示，为了提高电子和空穴注入发光层的效率，该发光功能层133还可以包括：空穴传输层(Hole Transport Layer，HTL)133b、电子传输层(Electronic Transport Layer，ETL)133c、空穴注入层(Hole Injection Layer，HIL)133d和电子注入层(Electronic Injection Layer，EIL)133e中的至少一个。示例的，该发光功能层133可以包括设置于阳极和发光层133a之间的空穴传输层(HTL)133b，以及设置于阴极和发光层133a之间的电子传输层(ETL)133c。为了进一步提高电子和空穴注入发光层133a的效率，发光功能层133还可以包括设置于阳极和空穴传输层133b之间的空穴注入层(HIL)133d， 以及设置于阴极和电子传输层133c之间的电子注入层(EIL)133e。
发光基板1上还可以设置连接各个发光器件13的驱动电路，驱动电路可以与控制电路连接，以根据控制电路输入的电信号，驱动各个发光器件13发光。该驱动电路可以为有源驱动电路或者无源驱动电路。
该发光基板1可以发白光、单色光(单一颜色的光)或颜色可调的光等。
在第一种示例中，该发光基板1可以发白光。此时，第一种情况，发光基板1包含的多个发光器件13(例如可以是全部的发光器件13)均发白光。此时，每个发光器件13中的发光层133a的材料可以包括红色发光材料、绿色发光材料和蓝色发光材料的混合材料。这时，可以通过驱动每个发光器件13发光，以实现发白光。第二种情况，如图1A所示，多个发光器件13包括发红色的光的发光器件13R，发绿色的光的发光器件13G和发蓝色的光的发光器件13B，其中，发光器件13R中的发光层133a的材料可以包括红色发光材料，发光器件13G中的发光层133a的材料可以包括绿色发光材料，发光器件13B中的发光层133a的材料可以包括蓝色发光材料。此时，可以通过控制发光器件13R、发光器件13G和发光器件13B发光的亮度，以使得发光器件13R、发光器件13G和发光器件13B实现混光，以使发光基板1呈现白光。
在该示例中，该发光基板1可用于照明，即可以应用于照明装置中。
在第二种示例中，该发光基板1可以发单色光。第一种情况，发光基板1包含的多个发光器件13(例如可以是全部的发光器件13)均发单色光(如红光)，此时，每个发光器件13中的发光层的材料包括红色发光材料。这时，可以通过驱动每个发光器件13发光，以实现发红光。第二种情况，该发光基板1与第一种示例中的第二种情况所描述的多个发光器件的结构相类似，此时，可以通过单独驱动发光器件13R、发光器件13G或发光器件13B实现单色发光。
在该示例中，该发光基板1可用于照明，即可以应用于照明装置中，也可以用于显示单一色彩的图像或画面，即可应用于显示装置中。
在第三种示例中，该发光基板1可以发颜色可调的光(即彩色光)，该发光基板1与第一种示例中的第二种情况所描述的多个发光器件的结构相类似的，通过对各个发光器件13的亮度进行控制，即可对该发光基板1发出的混合光的颜色和亮度进行控制，可实现彩色发光。
在该示例中，该发光基板可用于显示图像或画面，即可应用于显示装置中，当然，该发光基板也可以用于照明装置中。
在第三种示例中，以该发光基板1为显示基板为例，如全彩显示面板， 如图1A和图1B所示，该发光基板1包括显示区A和设置于显示区A周边的周边区S。显示区A包括多个亚像素区Q’，每个亚像素区Q’对应一个开口Q，一个开口Q对应一个发光器件13，每个亚像素区Q’中设置有用于驱动对应的发光器件13发光的像素驱动电路200。周边区S用于布线，如连接像素驱动电路200的栅极驱动电路100。
当然，如图1C所示，该发光基板1的像素驱动电路200还可以为如图1C所示的3T1C的结构。
在一些实施例中，如图2A所示，多个发光器件包括：至少一个第一发光器件13a和至少一个第二发光器件13b。其中，至少一个第一发光器件13a可以是发红色的光的发光器件13R，至少一个第二发光器件13b可以是发绿色的光的发光器件13G。
至少一个第一发光器件13a包括：具有第一厚度d1的第一颜色发光层133a_1，至少一个第二发光器件13b包括具有第二厚度d2的第一颜色发光层133a_1，以及沿远离衬底11的方向依次层叠设置在第二发光器件13b所包含的第一颜色发光层133a_1上的第一材料层10和第二颜色发光层133a_2。也即，第一颜色发光层133a_1的材料为红色发光材料，第二颜色发光层133a_2的材料为绿色发光材料。
其中，第二厚度d2小于第一厚度d1，且在第二发光器件13b中，第一材料层10被配置为将从第一颜色发光层133a_1传输的空穴传输至第二颜色发光层133a_2，并对从第二颜色发光层133a_2传输的电子进行阻挡，或者，第一材料层10被配置为将从第一颜色发光层133a_1传输的电子传输至第二颜色发光层133a_2，并对从第二颜色发光层133a_2传输的空穴进行阻挡。
也即，在这些实施例中，第二发光器件13b所包含的第一颜色发光层133a_1的厚度小于第一发光器件13a所包含的第一颜色发光层133a_1的厚度。第一材料层10可以作为电子阻挡层或空穴阻挡层。
在一些实施例中，如图2A所示，至少一个第二发光器件13还包括：设置于第二发光器件13b所包含的第一颜色发光层133a_1靠近衬底11一侧的电子传输层133b，第一材料层10的材料包括具有电子传输功能的材料。也即该发光基板为“倒置”式发光基板。
在另一些实施例中，如图2A所示，至少一个第二发光器件13还包括：设置于第二发光器件13b所包含的第一颜色发光层133a_1靠近衬底11一侧的空穴传输层133c，第一材料层10的材料包括具有空穴传输功能的材料。也即该发光基板为“正置”式发光基板。
其中，上述电子传输层133b和空穴传输层133c可以为形成在第二发光器件所在区域的图案，也可以整层覆盖。
另外，上述电子传输层133b和空穴传输层133c可以与第二发光器件13b所包含的第一颜色发光层133a_1接触或间隔有其他图案(如在第二发光器件13b包括电子传输层133b的情况下，间隔有空穴阻挡层，在第二发光器件13b包括空穴传输层133c的情况下，间隔有电子阻挡层)。这里，以电子传输层133b和空穴传输层133c与各发光器件所包含的第一颜色发光层133a_1接触为例，在第二发光器件13b包括电子传输层133b，且电子传输层133b整层覆盖的情况下，该第一颜色发光层133a_1的前膜层20是电子传输层133b，在第二发光器件13b包括空穴传输层133c，且空穴传输层133c整层覆盖的情况下，该第一颜色发光层133a_1的前膜层20是空穴传输层133c。
这里，以第一发光器件13a和第二发光器件13b均为量子点发光器件为例，第一颜色发光层133a_1的材料可以包括第一量子点发光材料，如红色量子点发光材料，第二颜色发光层133a_2的材料可以包括第二量子点发光材料，如绿色量子点发光材料。在制作发光基板时，若通过直接对量子点发光材料进行曝光、显影的方式进行图案化，则在显影过程中，容易发生量子点发光材料在前膜层20如电子传输层133b或空穴传输层133c等上的残留，这可能是由于量子点发光材料与已经形成在衬底11上的电子传输层133b或空穴传输层133c等的材料的性质等不同所致。
当然，这里仅示出了量子点发光材料的前膜层20为电子传输层133b或空穴传输层133c的情形，本领域技术人员能够理解的是，量子点发光材料的前膜层20还可以为电子注入层133d或空穴注入层133e。
在此，以量子点发光材料的前膜层20为电子传输层133b为例，在制作时，首先在衬底11上依次形成多个阴极、电子注入层、电子传输层，其中，多个阴极可以间隔排列，分别一一对应地位于一个开口中，电子注入层和电子传输层均整层覆盖。接着，在形成有电子传输层133b的衬底11上，通过旋涂形成红色量子点发光材料的液膜，也即，将红色量子点发光材料分散或溶解于溶剂中，然后旋涂在衬底11上，这时，红色量子点发光材料的液膜在整个电子传输层上。而后，对红色量子点发光材料的液膜进行图案化，具体的，以红色量子点发光材料在紫外光的照射下改变溶解度为例，对红色量子点发光材料的液膜位于第一发光器件13a所在区域的部分进行紫外光照射，使红色量子点发光材料的液膜位于第一发光器件13a所在区域的部分不被溶解掉，这样，在后续显影过程中利用合适的溶剂将红色量子点发光材料位于 第一发光器件13a所在区域以外的部分溶解即可，然而，在实际溶解过程中，红色量子点发光材料位于第一发光器件13a所在区域以外的部分并不能被完全溶解掉，而是在第一发光器件13a所在区域以外的区域形成残留。
其中，在一些实施例中，如图2A所示，第一厚度d1为20nm～50nm，第二厚度d2为5nm～15nm。也即，图2A示出了红色量子点发光材料位于第一发光器件所在区域的部分的厚度为20nm～50nm，残留的红色量子点发光材料的厚度为5nm～15nm的情形。
这样，在未设置第一材料层10的情况下，在后续制作第二发光器件13b所包含的绿色量子点发光图案时，就会在第二发光器件13b所在区域形成残留的红色量子点发光材料和绿色量子点发光材料叠加的结构，在发光时，电子和空穴的复合区域部分落在残留的红色量子点发光材料所在区域，造成残留的红色量子点发光材料发光，造成混色现象，不利于发光器件中色纯度的提高。
其中，残留的红色量子点发光材料发光，主要有两种可能的发光机制，第一种，电子和空穴直接在残留的红色量子点发光材料中复合而进行发光，第二种，电子和空穴在绿色量子点发光材料中复合，然后通过能量转移，使残留的红色量子点发光材料中的电子和空穴发光。
这里，根据以上发光器件的阳极和阴极的位置，发光器件13可以分为“正置”式发光器件和“倒置”式发光器件。对于“正置”式发光器件而言，阳极相对于阴极更靠近衬底11，而对于“倒置”式发光器件而言，阴极相对于阳极更靠近衬底11。
在发光器件为“正置”式发光器件的情况下，根据电子和空穴传输是否平衡，电子和空穴的复合区域的分布可以有两种可能的情况，第一种情况，电子和空穴传输平衡，电子和空穴的复合区域可以落在残留的红色量子点发光材料和绿色量子点发光材料叠加的结构中，造成电子和空穴中的一部分在残留的红色量子点发光材料中复合发光，另一部分在绿色量子点发光材料中复合发光。第二种情况，电子和空穴传输不平衡，这时，有两种可能的情形，第一种情形，电子传输速度大于空穴传输速度，电子和空穴的复合区域会向残留的红色量子点发光材料中偏移，造成大部分的电子和空穴在残留的红色量子点发光材料中复合发光，少部分的电子和空穴在绿色量子点发光材料中复合发光。第二种情形，空穴传输速度大于电子传输速度，电子和空穴的复合区域会向绿色量子点发光材料中偏移，造成大部分的电子和空穴在绿色量子点发光材料中复合发光，少部分的电子和空穴在残留的红色量子点发光材 料中复合发光。
在发光器件为“倒置”式发光器件的情况下，电子和空穴的复合区域的分布可以参照对上述发光器件为“正置”式发光器件相类似的分析过程。不同的是，与上述发光器件为“正置”式发光器件相比，“倒置”式发光器件的电子从下往上传输，空穴从上往下传输，这时，在电子传输速度大于空穴传输速度的情况下，电子和空穴的复合区域会向绿色量子点发光材料中偏移，造成大部分的电子和空穴在绿色量子点发光材料中复合发光，少部分的电子和空穴在残留的红色量子点发光材料中复合发光。而在空穴传输速度大于电子传输速度，电子和空穴的复合区域会向残留的红色量子点发光材料中偏移，造成大部分的电子和空穴在残留的红色量子点发光材料中复合发光，少部分的电子和空穴在绿色量子点发光材料中复合发光。
由此可见，在上述发光器件未设置第一材料层10的情况下，无论该发光器件是“正置”式发光器件还是“倒置”式发光器件，都或多或少存在空穴和电子在残留的红色量子点发光材料中发光的情况，从而造成混色。
在本公开的实施例中，在发光器件为“正置”式发光器件的情况下，通过在残留的红色量子点发光材料和绿色量子点发光材料之间插入第一材料层10，该第一材料层10可以被配置为将从残留的红色量子点发光材料传输的空穴传输给绿色量子点发光材料，并对从绿色量子点发光材料传输的电子进行阻挡，一方面，第一材料层10可以对第二发光器件13b中的空穴进行传输，并对第二发光器件13b中的电子进行阻挡，从而可以改变空穴和电子在第二发光器件13b中的复合区域，如将本身在残留的红色量子点发光材料中复合的空穴和电子转移到绿色量子点发光材料中进行复合，从而可以避免残留的红色量子点发光材料发光。另一方面，通过对第二发光器件13b中的电子进行阻挡，还可以将电子限制在绿色量子点发光材料中，避免电子直接传输到残留的红色量子点发光材料中与空穴复合进行发光，提高绿色量子点发光材料的发光效率。另外，通过设置第一材料层10，还能够避免绿色量子点发光材料和残留的红色量子点发光材料之间发生能量转移，从而能够从整体上降低残留的红色量子点发光材料的发光几率，降低混色所带来的显示不良。
反之，在发光器件为“倒置”式发光器件的情况下，通过在残留的红色量子点发光材料和绿色量子点发光材料之间插入第一材料层10，该第一材料层可以被配置为将从残留的红色量子点发光材料传输的电子传输给绿色量子点发光材料，并对从绿色量子点发光材料传输的空穴进行阻挡，同样能够将电子和空穴限制在绿色量子点发光材料中，与相关技术中电子和空穴在残留 的红色量子点发光材料中复合发光相比，可以减少电子和空穴在残留的红色量子点发光材料中的复合几率，从而可以在降低残留的红色量子点发光材料的发光效率的同时，提高绿色量子点发光材料的发光效率，进而可以降低混色所带来的显示不良。
在一些实施例中，如图2A所示，在至少一个第二发光器件13b还包括电子传输层133b的情况下，第一材料层10的材料与电子传输层133b的材料不同。也即，第一材料层10的材料的能级与电子传输层133b的材料的能级不同，可以通过对第一材料层10的材料进行选择，以得到具有合适能级的第一材料层10，从而可以更好地起到传输电子阻挡空穴的作用。
在另一些实施例中，在至少一个第二发光器件13b还包括空穴传输层133c的情况下，第一材料层10的材料与空穴传输层133c的材料不同。也即，第一材料层10的材料的能级与空穴传输层133c的材料的能级不同，可以通过对第一材料层10的材料进行选择，以得到具有合适能级的第一材料层10，从而可以更好地起到传输空穴阻挡电子的作用。
在一些实施例中，第一材料层10可以通过至少一种电子传输材料在电磁辐射下制备获得，电子传输材料的结构通式如下式(I)所示：
Figure PCTCN2021118275-appb-000005
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种。
也即，在这些实施例中，第一材料层10作为空穴阻挡层。
吸电子基团是相对于给电子基团而言的，在半导体材料中，例如喹啉类基团、嘧啶类基团、咪唑类基团、三嗪类基团等都属于吸电子基团，而芳胺类基团、咔唑类基团、芴类基团等则都属于给电子基团。示例的，在一些实施例中，吸电子基团选自取代或未取代的苯并咪唑基。
B选自能够在电磁辐射下改变溶解度的基团，是指，B可以是任何能够在电磁辐射下发生物理或化学变化，使得该电子传输材料的溶解度发生变化的基团。
电磁波向空中发射或泄露的现象，叫电磁辐射，电磁波按照频率或波长 分为不同类型，包括：无线电波，微波，太赫兹辐射，红外辐射，可见光，紫外光，X射线和伽玛射线等。这里的电磁辐射是指采用电磁波(可以是任意一个波段的电磁波)对电子传输材料进行辐照。
在一些实施例中，B可以为烯基、炔基、丙烯酸酯基和环氧基中的任一种。也即，B为可以在电磁辐射下发生交联反应的基团。这样，在电磁辐射下，可以使电子传输材料的分子交联成网状，从而可以改变该电子传输材料的溶解度。
其中，如下示出了烯基、炔基、环氧基和丙烯酸酯基的结构：
Figure PCTCN2021118275-appb-000006
在上述烯基、炔基、环氧基和丙烯酸酯基所示结构中虚线表示与A连接的键。
示例的，电子传输材料可以为如下式所示的结构：
Figure PCTCN2021118275-appb-000007
这里，还需要说明的是，在第一材料层10作为空穴阻挡层的情况下，该第一材料层10除需要满足以上结构式以外，还满足一定的能级要求，以更好地起到传输电子阻挡空穴的作用。
也即，在一些实施例中，第一材料层10、第一颜色发光层133a_1和第二颜色发光层133a_2之间的能级满足：第一材料层10的LUMO(Lowest Unoccupied Molecular Orbital，最低未占分子轨道)能级与第一颜色发光层133a_1的LUMO能级之差，以及第二颜色发光层133a_2的LUMO能级与第 一材料层10的LUMO能级之差均小于或等于第一预设阈值，如0.3eV，第二颜色发光层133a_2的HOMO(Highest Occupied Molecular Orbital，最高已占分子轨道)能级与第一材料层10的HOMO能级之差大于第二预设阈值，如0.3eV。
在另一些实施例中，在第一材料层10可以通过至少一种空穴传输材料在电磁辐射下制备获得；空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000008
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
也即，在这些实施例中，第一材料层10作为电子阻挡层。
其中，给电子基团可以参照上述描述，在此不再赘述。
在一些实施例中，给电子基团可以为取代或未取代的三苯胺基、二苯胺基、咔唑基和芴基中的任一种。
与上述相类似地，D选自能够在电磁辐射下改变溶解度的基团，是指，D可以是任何能够在电磁辐射下发生物理或化学变化，使得该空穴传输材料的溶解度发生变化的基团。
电磁波向空中发射或泄露的现象，叫电磁辐射，电磁波按照频率或波长分为不同类型，包括：无线电波，微波，太赫兹辐射，红外辐射，可见光，紫外光，X射线和伽玛射线等。这里的电磁辐射是指采用电磁波(可以是任意一个波段的电磁波)对空穴传输材料进行辐照。
示例的，D可以选自烯基、炔基、丙烯酸酯基和环氧基中的任一种。也即，D为可以在电磁辐射下发生交联反应的基团。这样，在电磁辐射下，可以使空穴传输材料的分子交联成网状，从而可以改变该空穴传输材料的溶解度。
其中，如下示出了三苯胺、二苯胺、咔唑和芴的结构：
Figure PCTCN2021118275-appb-000009
Figure PCTCN2021118275-appb-000010
示例的，空穴传输材料可以为如下式所示的结构：
Figure PCTCN2021118275-appb-000011
这里，还需要说明的是，在第一材料层10作为电子阻挡层的情况下，该第一材料层10除需要满足以上条件以外，还可以满足一定的能级要求，以更好地起到传输电子阻挡空穴的作用。
示例的，在第一材料层10作为电子阻挡层的情况下，第一材料层10、第一颜色发光层133a_1和第二颜色发光层133a_2的能级之间满足：第一材料层10的HOMO能级与第一颜色发光层133a_1的HOMO能级之差，以及第二颜色发光层133a_2的HOMO能级与第一材料层10的HOMO能级之差均小于或等于第三预设阈值，如0.3eV，第一材料层10的LUMO能级与第二颜色发光层133a_2的LUMO能级之差大于第四预设阈值，如0.3eV。
另外，还需要说明的是，为了对上面所列举的结构式进行充分说明，上面几种结构式的制备方法可以见文末所示的示例。
在一些实施例中，如图2A所示，第二颜色发光层133a_2仅设置在第二 发光器件13b所在区域，或者，如图2B所示，第二颜色发光层133a_2包括设置在第二发光器件13b所在区域的第一部分133a_21和设置在第一发光器件13a所在区域的第二部分133a_22，且第二部分133a_22位于第一发光器件所包含的第一颜色发光层133a_1之上，并与第一颜色发光层133a_1接触，其中，第一部分133a_21具有第三厚度d3，第二部分133a_22具有第四厚度d4，第四厚度d4小于第三厚度d3。
在这些实施例中，在第二颜色发光层133a_2仅设置在第二发光器件13b所在区域的情况下，第二颜色发光层133a_2在第一发光器件13a所在区域无覆盖，这可能是由于第二颜色发光层133a_2的材料和第一颜色发光层133a_1的材料性质比较相近所导致的，如第一颜色发光层133a_1的材料和第二颜色发光层133a_2的材料可以均为量子点发光材料，在制作时，与上述第一颜色发光层133a_1的制备方法类似，不同的是，在通过溶解去除第二颜色发光层133a_2位于第一发光器件13a所在区域的部分的情况下，由于第二颜色发光层133a_2相对于第一颜色发光层133a_1而言，与其前膜层20的材料性质接近，因此，通过选择合适的溶剂，即可将第二颜色发光层133a_2去除完全，从而可以达到使第二颜色发光层133a_2在第一发光器件13a所在区域无覆盖的目的。
同理，通过对溶剂进行选择，还可以对第二颜色发光层133a_2在第一发光器件13a所在区域的部分(也即第二部分133a_22)的厚度进行控制，如使得第二部分133a_22具有第四厚度d4，第四厚度d4小于第三厚度d3，而本领域技术人员能够理解的是，在第二颜色发光层133a_2在第一发光器件13a所在区域形成残留的情况下，为了防止第二颜色发光层133a_2在第一发光器件13a所在区域发光，可选的，第四厚度d4为不对显示产生影响的厚度。
示例的，在一些实施例中，第四厚度d4小于第二厚度d2。
具体的，如图2B所示，第三厚度d3为20nm～50nm，第四厚度d4小于5nm。
另外，在第二颜色发光层133a_2仅设置在第二发光器件13b所在区域的情况下，第二颜色发光层133a_2的厚度可以为20nm～50nm。
在一些实施例中，如图2A和图2B所示，多个发光器件13还包括：至少一个第三发光器件13c。至少一个第三发光器件13c包括：具有第五厚度d5的第一颜色发光层133a_1，以及沿远离衬底11的方向依次层叠设置于第三发光器件13c所包含的第一颜色发光层133a_1之上的第二材料层30和第三颜色发光层133a_3。其中，第五厚度d5小于第一厚度d1，且在第三发光器件13c 中，第二材料层30被配置为将从第一颜色发光层133a_1传输的空穴传输至第三颜色发光层133a_3，并对从第三颜色发光层133a_3传输的电子进行阻挡，或者，第二材料层30被配置为将从第一颜色发光层133a_1传输的电子传输至第三颜色发光层133a_3，并对从第三颜色发光层133a_2传输的空穴进行阻挡。
在这些实施例中，在上述至少一个第一发光器件13a是发红色的光的发光器件13R，至少一个第二发光器件13b是发绿色的光的发光器件13G的情况下，至少一个第三发光器件13c可以是发蓝色的光的发光器件13B。这里仅是示例，本领域技术人员能够理解的是，第一发光器件13a、第二发光器件13b和第三发光器件13c可以分别为发任意颜色的光的发光器件。如第一发光器件13a可以是发蓝色的光的发光器件，第二发光器件13b可以是发黄色的光的发光器件，第三发光器件13c可以是发红色的光的发光器件。
另外，第三发光器件13c所包含的第一颜色发光层133a_1的厚度小于第一发光器件13a所包含的第一颜色发光层133a_1的厚度。第二材料层30可以作为电子阻挡层或空穴阻挡层。
这里，仍然以第一发光器件13a、第二发光器件13b和第三发光器件13c均为量子点发光器件为例，第一颜色发光层133a_1的材料可以包括第一量子点发光材料，如红色量子点发光材料，第二颜色发光层133a_2的材料可以包括第二量子点发光材料，如绿色量子点发光材料，第三颜色发光层133a_3的材料可以包括第三量子点发光材料，如蓝色量子点发光材料。
也即，在这些实施例中，与上述第一材料层10相类似地，通过在第一颜色发光层133a_1和第三颜色发光层133a_3之间插入第二材料层30，第二材料层30可以起到与第一材料层10相同的作用，具体可参照第一材料层10的描述，在此不再赘述。
在一些实施例中，如图2C所示，第二材料层30和第一材料层10连接为连续的结构。也即，第二材料层30和第一材料层10的材料相同，且连接为一体结构，此时，第一材料层10和第二材料层30可以通过同一次图案化工艺形成，也即，在形成第二颜色发光层133a_2之前，形成第一材料层10和第二材料层30，可以节省制备工艺，减少掩膜板的使用。
这里，需要说明的是，在第一材料层10的材料和第二材料层30的材料相同的情况下，第一材料层10不仅要与第一颜色发光层133a_1和第二颜色发光层133a_2之间满足一定的能级关系，还要与第三颜色发光层133a_3之间满足一定的能级关系。
具体的，在第一材料层10作为空穴阻挡层的情况下，第一材料层的LUMO能级与第一颜色发光层的LUMO能级之差，以及第二颜色发光层的LUMO能级与第一材料层的LUMO能级之差均小于或等于第一预设阈值，如0.3eV，第二颜色发光层的HOMO能级与第一材料层的HOMO能级之差大于第二预设阈值，如0.3eV。同时，第三颜色发光层的LUMO能级与第一材料层的LUMO能级之差均小于或等于第五预设阈值，如0.3eV，第三颜色发光层的HOMO能级与第一材料层的HOMO能级之差大于第六预设阈值，如0.3eV。
在第一材料层10作为电子阻挡层的情况下，第一材料层的HOMO能级与第一颜色发光层的HOMO能级之差，以及第二颜色发光层的HOMO能级与第一材料层的HOMO能级之差均小于或等于第三预设阈值，如0.3eV，第一材料层的LUMO能级与第二颜色发光层的LUMO能级之差大于第四预设阈值，如0.3eV。同时，第三颜色发光层的HOMO能级与第一材料层的HOMO能级之差均小于或等于第七预设阈值，如0.3eV，第一材料层的LUMO能级与第三颜色发光层的LUMO能级之差大于第八预设阈值，如0.3eV。
在另一些实施例中，第一材料层10的材料和第二材料层30的材料不同。也即，第一材料层10和第二材料层30可以通过不同的图案化工艺形成。
这时，第二材料层30的材料可以包括至少一种电子传输材料，或者第二材料层30的材料可以包括至少一种空穴传输材料。
电子传输材料的结构通式可以如式(I)所示，空穴传输材料的结构通式可以如式(II)所示。具体可参照上述对式(I)和式(II)的描述。与上述第一材料层10的材料不同的是，第二材料层10的材料可以通过改变式(I)或式(II)中的取代基等得到，以使得第二材料层30的能级与第一材料层10的能级不同。
在一些实施例中，如图2B所示，在第二颜色发光层133a_2包括第一部分133a_21和第二部分133a_22的情况下，第二颜色发光层133a_2还包括设置在第三发光器件13c所在区域的第三部分133a_23。具体制备方法可以参照上述第二颜色发光层133a_2的制备方法，不同的是，第二颜色发光层133a_2除在第一发光器件13a所在区域形成残留之外，还在第三发光器件13c所在区域形成残留。
这时，第三部分133a_23在第三发光器件13c所在区域的位置有两种情况，第一种情况，如图2B所示，第二材料层30的材料和第一材料层10的材料不同，也即，可以在形成第二颜色发光层133a_2之后，再形成第二材料层30，在此情况下，第二颜色发光层133a_2设置在第三发光器件13c所在区域的部 分(也即第三部分133a_23)可以位于第二材料层30和第一颜色发光层133a_1之间。这时，第三部分133a_23的厚度d6小于第二厚度d2。与上述第四厚度d4小于第二厚度d2的原因类似，也即，第二颜色发光层133a_2的材料和第一颜色发光层133a_1的材料之间的性质较为相近，从而可以通过选择合适的溶剂将第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分溶解至只有少量残留的程度，从而可以使第三部分133a_23的厚度小于第二厚度d2。
第二种情况，如图2C和2D所示，第二材料层30和第一材料层10连接为连续的结构，也即，在形成第二颜色发光层133a_2之前，通过同一次图案化工艺形成第一材料层10和第二材料层30，在此情况下，如图2C所示，第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分(也即第三部分133a_23)位于第二材料层30和第三颜色发光层133a_3之间。这时，第三部分133a_23的厚度可以与第一颜色发光层133a_1设置在第二发光器件13b所在区域的部分的厚度(也即第二厚度d2)大致相同。也即，与相邻的两个材料层的材料均为量子点发光材料相比，第二颜色发光层133a_2的材料与第二材料层30的材料之间的性质相差较大，从而会使第二颜色发光层133a_2在第二材料层30上形成较大的残留，也即第三部分133a_23的厚度大于第二部分133a_22的厚度。
当然，这是第二颜色发光层133a_2在第一发光器件13a所在区域形成残留的情形，需要说明的是，根据第二颜色发光层133a_2也可以在第一发光器件13a所在区域无覆盖，可以得知，该发光基板还可以为如图2D所示结构，这时，第二颜色发光层133a_2仅包括设置在第二发光器件13b所在区域的第一部分133a_21和设置在第三发光器件13c所在区域的第三部分133a_23。
在一些实施例中，如图2C和图2D所示，在第三部分133a_23位于第二材料层30和第三颜色发光层133a_3之间的情况下，第三发光器件13c还包括第三材料层40，第三材料层40位于第三部分133a_23和第三颜色发光层133a_3之间，第三材料层40被配置为将从第三部分133a_23传输的空穴传输至第三颜色发光层133a_3，并对从第三颜色发光层133a_3传输的电子进行阻挡，或者，第三材料层40被配置为将从第三部分133a_23传输的电子传输至第三颜色发光层133a_3，并对从第三颜色发光层133a_3传输的空穴进行阻挡。
在这些实施例中，通过在第三部分133a_23和第三颜色发光层133a_3之间插入第三材料层40，第三材料层40同样也可以作为电子阻挡层或空穴阻挡层，第三材料层40可以起到与第一材料层10和第二材料层30类似的作用， 具体可参照第一材料层10的描述，在此不再赘述。
在一些实施例中，如图2A～图2D所示，第三颜色发光层133a_3仅设置在第三发光器件13c所在区域，或者，如图2E和图2F所示，第三颜色发光层133a_3包括设置在第三发光器件13c所在区域的第三部分133a_31，以及设置在第一发光器件13a所在区域的第四部分133a_32和设置在第二发光器件13b所在区域的第五部分133a_33，且第四部分133a_32位于第一发光器件13a所包含的第一颜色发光层133a_1或第二颜色发光层133a_2之上，且与第一颜色发光层133a_1或第二颜色发光层133a_2接触，第五部分133a_33位于第二发光器件13b所包含的第二颜色发光层133a_2之上，且与第二颜色发光层133a_2接触，第三部分133a_31具有第六厚度d7，第四部分133a_32和第五部分133a_33具有第七厚度d8，第七厚度d8小于第六厚度d7。
在这些实施例中，在第三颜色发光层133a_3仅设置在第三发光器件13a所在区域的情况下，第三颜色发光层133a_3在第一发光器件13a和第二发光器件13b所在区域均无覆盖，这可能是由于第三颜色发光层133a_3的材料与第一颜色发光层133a_1的材料和第二颜色发光层133a_1的材料性质比较相近所导致的，如第三颜色发光层133a_3的材料、第一颜色发光层133a_1的材料和第二颜色发光层133a_2的材料可以均为量子点发光材料，在制作时，各自的量子点发光材料发生电磁辐射的部分的溶解度相当，未发生电磁辐射的部分在相同性质的溶剂中的溶解度相当，这样，通过选择合适的溶剂对第三颜色发光层133a_3的量子点发光材料未发生电磁辐射的部分进行溶解，即可对第七厚度d8进行控制，达到使第三颜色发光层133a_3在第一发光器件13a和第二发光器件13b所在区域无覆盖或者仅有少量残留的目的。
本领域技术人员能够理解的是，在第三颜色发光层133a_3在第一发光器件13a和第二发光器件13b所在区域形成残留的情况下，为了防止第三颜色发光层133a_3在第一发光器件13a和第二发光器件13b所在区域发光，可选的，第七厚度d8为不对显示产生影响的厚度。
在一些示例中，如图2E和图2F所示，第六厚度d7为20nm～50nm，第七厚度d8小于5nm。
综上所述，通过在第一颜色发光层133a_1位于第二发光器件13b所在区域的部分和第二发光器件13b所包含的第二颜色发光层133a_2之间设置第一材料层10，并在第一颜色发光层133a_1位于第三发光器件13c所在区域的部分和第三发光器件13c所包含的第三颜色发光层133a_3之间设置第二材料层30，可以在第二发光器件13b所在区域的残留的第一颜色发光层133a_1和第 二颜色发光层133a_2之间形成第一隔离层，在第三发光器件13c所在区域的残留的第一颜色发光层133a_1和第三颜色发光层133a_3之间形成第二隔离层，第一隔离层可以充当第二发光器件13b的电子阻挡层或空穴阻挡层，对第二发光器件13b中的电子和空穴的复合区域进行调节，避免电子和空穴在残留的第一颜色发光层133a_1中复合发光，从而可以起到防止混色的作用，第二隔离层同样可以充当第三发光器件13c的电子阻挡层或空穴阻挡层，对第三发光器件13c中的电子和空穴的复合区域进行调节，避免电子和空穴在残留的第一颜色发光层133a_1中复合发光，同样可以起到防止混色的作用。这样一来，在第一颜色发光层133a_1的材料为红色量子点发光材料，第二颜色发光层133a_2的材料为绿色量子点发光材料，第三颜色发光层133a_3的材料为蓝色量子点发光材料的情况下，可以在保证各个发光器件13具有较高的色纯度的情况下，实现全彩发光，从而可以提高色域。
需要说明的是，上述仅示出了第一颜色发光层133a_1、第一材料层10、第二材料层30、第二颜色发光层133a_2和第三颜色发光层133a_3等各自的设置区域的一种剖视图，本领域技术人员能够理解的是，在实际产品中，发光基板还包括像素界定层，因此，实际产品的剖视图可以如图3所示。在图3中，仅示出了第一材料层10、第二材料层30、第二颜色发光层133a_2和第三颜色发光层133a_3仅形成在开口Q中的结构，本领域技术人员能够理解的是，第一材料层10、第二材料层30、第二颜色发光层133a_2和第三颜色发光层133a_3还可以如图1A中第一颜色发光层133a_1、第二颜色发光层133a_2和第三颜色发光层133a_3所示，还包括形成在开口Q外的部分，这时，第一材料层10和第二颜色发光层133a_2所设置的区域即为第二发光器件13b所在区域，第二材料层30和第三颜色发光层133a_3所设置的区域即为第三发光器件13c所在区域。
本公开的一些实施例提供一种发光基板的制备方法，包括：
在衬底11上形成多个发光器件13。多个发光器件包括至少一个第一发光器件13a和至少一个第二发光器件13b。至少一个第一发光器件13a包括：具有第一厚度d1的第一颜色发光层133a_1，至少一个第二发光器件13b包括：具有第二厚度d2的第一颜色发光层133a_1，以及沿远离衬底11的方向依次层叠形成在第二发光器件13b所包含的第一颜色发光层133a_1上的第一材料层10和第二颜色发光层133a_2。其中，第二厚度d2小于第一厚度d1，且在第二发光器件13b中，第一材料层10被配置为将从第一颜色发光层133a_1传输的空穴传输至第二颜色发光层133a_2，并对从第二颜色发光层133a_2传 输的电子进行阻挡，或者，第一材料层10被配置为将从第一颜色发光层133a_1传输的电子传输至第二颜色发光层133a_2，并对从第二颜色发光层133a_2传输的空穴进行阻挡。
其中，该衬底11可以为已经形成有像素驱动电路200、像素界定层12、多个第一电极131的衬底。
其中，第一电极131可以为阳极或阴极。在第一电极131为阳极的情况下，第一电极131的材料可以是透明氧化物半导体材料，例如ITO、ZnO等高功函数材料。在第一电极131为阴极的情况下，第一电极131的材料可以是Al、Ag等低功函数材料。
在衬底11上形成多个发光器件13，如图4A～图4K所示，可以包括：
S10、在形成有像素界定层的衬底11上形成空穴注入层133d或电子注入层133e，空穴注入层133d或电子注入层133e整层覆盖。
其中，在第一电极131为阳极的情况下，在形成有多个第一电极131的衬底11上形成空穴注入层133d，在第一电极131为阴极的情况下，在形成有多个第一电极131的衬底11上形成电子注入层133e。
空穴注入层133d或电子注入层133e可以通过蒸镀或旋涂形成。该空穴注入层133d的材料可以包括氧化镍纳米粒子。电子注入层133e的材料可以包括氧化锌纳米粒子。
S20、在形成有空穴注入层133d或电子注入层133e的衬底11上形成第一颜色发光层133a_1。
其中，如图4A所示，形成第一颜色发光层133a_1的步骤可以包括：
S201、在形成有空穴注入层133d或电子注入层133e的衬底11上形成第二薄膜300，第二薄膜300的材料包括第一量子点发光材料。
其中，第一量子点发光材料可以是具有可交联的配体(如A配体：R-2-氨基-3-(S-硫代丁基)丙酸)的量子点发光材料。A配体配位的量子点发光材料可以通过油酸配位的量子点发光材料通过配体交换反应制备获得。第一量子点发光材料示例的可以是红色量子点发光材料。
S202、对第二薄膜300位于第一发光器件13a所在区域的部分进行电磁辐射，改变第二薄膜300位于第一发光器件13a所在区域的部分的溶解度。
如在电磁辐射下，第二薄膜300位于第一发光器件13a所在区域的部分所包含的第一量子点发光材料交联成网状，从而改变第二薄膜300位于第一发光器件13a所在区域的部分的溶解度。
这里的电磁辐射是指采用电磁波对第二薄膜300位于第一发光器件13a 所在区域的部分进行辐照。示例的，可以是采用紫外光对第二薄膜300位于第一发光器件13a所在区域的部分进行辐照，使第二薄膜300位于第一发光器件13a所在区域的部分所包含的第一量子点发光材料发生交联反应生成网状。而未被紫外光照射的部分所包含的第一量子点发光材料之间不发生交联，或者仅有少量发生交联。
S203、对第二薄膜300位于第一发光器件13a所在区域以外的部分进行溶解，得到第一发光器件13a所包含的具有第一厚度d1的第一颜色发光层133a_1和第二发光器件13b所包含的具有第二厚度d2的第一颜色发光层133a_1。
这里，可以根据发生交联反应后的第一量子点发光材料和未发生交联反应的第一量子点发光材料在溶剂中的溶解度不同，选择合适的溶剂将第二薄膜300位于第一发光器件13a所在区域以外的部分进行溶解掉。然而，通过实验发现，在此过程中，第二薄膜300位于第一发光器件13a所在区域以外的部分并不会被完全溶解掉，而是会在第一发光器件13a所在区域以外的部分形成残留，也即形成具有第二厚度d2的第一颜色发光层133a_1。
S30、在形成有第一颜色发光层133a_1的衬底11上形成第一材料层10。
其中，如图4B所示，形成第一材料层10的步骤包括：
S301、在形成有第一颜色发光层133a_1的衬底上形成第一薄膜400。
其中，该第一薄膜400的材料可以包括电子传输材料或空穴传输材料。
在第一电极为阳极的情况下，第一薄膜400的材料包括电子传输材料，在第一电极为阴极的情况下，第一薄膜400的材料包括空穴传输材料。
其中，由于上述第一材料层10仅设置在第二发光器件13b所在区域，因此，电子传输材料或空穴传输材料可以是通过在电磁辐射下可发生溶解度改变的材料，这样，可以根据后续改变溶解度的部分和未改变溶解度的部分的溶解度不同将未改变溶解度的部分去除完全。
在一些实施例中，电子传输材料的结构通式如下式(I)所示：
Figure PCTCN2021118275-appb-000012
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代 的取代基选自硝基、羟基和烷基中的任一种。
其中，电子传输材料的具体结构可以参照上述对式(I)的描述，在此不再赘述。
在另一些实施例中，空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000013
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
其中，空穴传输材料的具体结构可以参照上述对式(II)的描述，在此不再赘述。
S302、对第一薄膜400位于第二发光器件13b所在区域的部分进行电磁辐射，改变第一薄膜400位于第二发光器件13b所在区域的部分的溶解度。
如在电磁辐射下，第一薄膜400位于第二发光器件13b所在区域的部分所包含的电子传输材料或空穴传输材料交联成网状。
其中，电磁辐射的定义可以参照上述描述，在此不再赘述。
在一些实施例中，在第一薄膜400包括空穴传输材料的情况下，可以采用紫外光对第一薄膜400位于第二发光器件13b所在区域的部分进行照射，使第一薄膜400位于第二发光器件13b所在区域的部分所包含的空穴传输材料发生交联反应生成网状。而未被紫外光照射的部分所包含的空穴传输材料之间不发生交联，或者仅有少量发生交联。
在另一些实施例中，在第一薄膜400包括电子传输材料的情况下，可以采用紫外光对第一薄膜400位于第二发光器件13b所在区域的部分进行照射，使第一薄膜400位于第二发光器件13b所在区域的部分所包含的电子传输材料发生交联反应生成网状。而未被紫外光照射的部分所包含的电子传输材料之间不发生交联，或者仅有少量发生交联。
这里，仅示出了上述电子传输材料或空穴传输材料在紫外光照射下发生交联的情形，本领域技术人员能够理解的是，用其他波段的光照射发生交联的情形也在本公开的保护范围之内。
S303、对第一薄膜400位于第二发光器件13b所在区域以外的部分进行 溶解，将第一薄膜400位于第二发光器件13b所在区域以外的部分去除，得到第一材料层10。
其中，在第一薄膜400包括空穴传输材料的情况下，可以采用第一溶剂对第一薄膜400位于第二发光器件13b所在区域以外的部分进行溶解，以将第一薄膜400位于第二发光器件13b所在区域以外的部分完全去除，得到第一材料层10。
在第一薄膜400包括电子传输材料的情况下，可以采用第二溶剂对第一薄膜400位于第二发光器件13b所在区域以外的部分进行溶解，以将第一薄膜400位于第二发光器件13b所在区域以外的部分完全去除，得到第一材料层10。
S40、在形成有第一材料层10的衬底11上形成第二颜色发光层133a_2。
其中，如图4C和图4D所示，形成第二颜色发光层133a_2的步骤可以包括：
S401、在形成有第一材料层10的衬底上形成第三薄膜500，第三薄膜500包括第二量子点发光材料。
其中，第二量子点发光材料可以是具有可交联的配体(如A配体：R-2-氨基-3-(S-硫代丁基)丙酸)的量子点发光材料。A配体配位的量子点发光材料可以通过油酸配位的量子点发光材料通过配体交换反应制备获得。第二量子点发光材料示例的可以是绿色量子点发光材料。
S402、对第三薄膜500位于第二发光器件13b所在区域的部分进行电磁辐射，改变第三薄膜500位于第二发光器件13b所在区域的部分的溶解度。
如在电磁辐射下，第三薄膜500位于第二发光器件13b所在区域的部分所包含的第二量子点发光材料交联成网状。
其中，电磁辐射的定义可以参照上述描述，在此不再赘述。
以第二量子点发光材料为A配体配位的绿色量子点发光材料为例，可以采用紫外光对第三薄膜500位于第二发光器件13b所在区域的部分进行照射，使第三薄膜500位于第二发光器件13b所在区域的部分所包含的第二量子点发光材料发生交联反应生成网状。而未被紫外光照射的部分所包含的第二量子点发光材料之间不发生交联，或者仅有少量发生交联。
S403、对第三薄膜500位于第二发光器件13b所在区域以外的部分进行溶解，使第三薄膜500在第二发光器件13b所在区域以外的区域无覆盖，或者，使第三薄膜500在第二发光器件13b所在区域以外的区域形成厚度小于5nm的残留部。
也即，在交联完成后，可以根据发生交联反应后的第二量子点发光材料和未发生交联反应的第二量子点发光材料在溶剂中的溶解度不同，选择合适的溶剂将第三薄膜500位于第二发光器件13b所在区域以外的部分进行溶解掉。这时，在溶解过程中发现，可能是因为第二颜色发光层133a_2的材料和第一颜色发光层133a_1的材料性质较为相近，在采用有机溶剂对第二颜色发光层133a_2设置在第二发光器件13b所在区域以外的部分进行溶解时，更有利于将第二颜色发光层133a_2设置在第二发光器件13b所在区域以外的部分去除掉，从而使得第二颜色发光层133a_2在第二发光器件13b所在区域无覆盖(如图4C中得到的结构所示)或者仅有少量的残留(如图4D中得到的结构所示)，且该残留不会对显示造成影响。
在一些实施例中，多个发光器件13还包括：至少一个第三发光器件13c，至少一个第三发光器件13c包括具有第五厚度d5的第一颜色发光层133a_1、以及沿远离衬底11的方向依次层叠设置于第三发光器件13c的第一颜色发光层133a_1之上的第二材料层30和第三颜色发光层133a_3。如图4E、4F和图4G所示，该制备方法还包括：
S50、在衬底11上依次形成第二材料层30和第三颜色发光层133a_3的步骤。
其中，在一些实施例中，第二材料层30的材料和第一材料层10的材料不同，如图4E所示，在衬底11上形成第二材料层30的步骤包括：
S501、在形成有第二颜色发光层133a_2的衬底11上形成第四薄膜600。
其中，第四薄膜600的材料可以包括电子传输材料或空穴传输材料。
在第一电极131为阳极的情况下，第四薄膜600的材料包括空穴传输材料，在第一电极131为阴极的情况下，第四薄膜600的材料包括电子传输材料。
其中，由于上述第二材料层30仅设置在第三发光器件13c所在区域，因此，电子传输材料或空穴传输材料可以是通过在电磁辐射下可发生溶解度改变的材料，这样，可以根据后续改变溶解度的部分和未改变溶解度的部分的溶解度不同将未改变溶解度的部分去除完全。
在一些实施例中，电子传输材料的结构通式如下式(I)所示：
Figure PCTCN2021118275-appb-000014
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种。
其中，电子传输材料的具体结构可以参照上述对式(I)的描述，在此不再赘述。
在另一些实施例中，空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000015
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
其中，空穴传输材料的具体结构可以参照上述对式(II)的描述，在此不再赘述。
S502、对第四薄膜600位于第三发光器件13c所在区域的部分进行电磁辐射，改变第四薄膜600位于第三发光器件13c所在区域的部分的溶解度。
如在电磁辐射下，第四薄膜600位于第三发光器件13c所在区域的部分所包含的电子传输材料或空穴传输材料交联成网状。
具体的，在第四薄膜600包括空穴传输材料的情况下，可以采用紫外光对第四薄膜600位于第三发光器件13c所在区域的部分进行照射，使第四薄膜600位于第三发光器件13c所在区域的部分所包含的空穴传输材料发生交联反应生成网状。而未被紫外光照射的部分所包含的空穴传输材料之间不发生交联，或者仅有少量发生交联。
在另一些实施例中，在第四薄膜600包括电子传输材料的情况下，可以采用紫外光对第四薄膜600位于第三发光器件13c所在区域的部分进行照射，使第四薄膜600位于第三发光器件13c所在区域的部分所包含的电子传输材料发生交联反应生成网状。而未被紫外光照射的部分所包含的电子传输材料 之间不发生交联，或者仅有少量发生交联。
S503、对第四薄膜600位于第三发光器件13c所在区域以外的部分进行溶解，将第四薄膜600位于第三发光器件13c所在区域以外的部分去除，得到第二材料层30。
其中，在第四薄膜600包括空穴传输材料的情况下，可以采用第三溶剂对第四薄膜600位于第三发光器件13c所在区域以外的部分进行溶解，以将第四薄膜600位于第三发光器件13c所在区域以外的部分完全去除，得到第二材料层30。
在第四薄膜600包括电子传输材料的情况下，可以采用第四溶剂对第四薄膜600位于第三发光器件13c所在区域以外的部分进行溶解，以将第四薄膜600位于第三发光器件13c所在区域以外的部分完全去除，得到第二材料层30。
在另一些实施例中，第二材料层30和第一材料层10连接成连续的结构。如图4F所示，在衬底11上形成第二材料层30的步骤包括：
在执行步骤S302)对第一薄膜400位于第二发光器件13b所在区域的部分进行电磁辐射的同时，还对第一薄膜400位于第三发光器件13c所在区域的部分进行电磁辐射，改变第一薄膜400位于第三发光器件13c所在区域的部分的溶解度。从而可以在执行步骤S303)将第一薄膜400位于第二发光器件13b所在区域以外的部分去除时，得到该第一材料层10和该第二材料层30。
在这些实施例中，第二材料层30与第一材料层10通过同一次图案化工艺形成，可以节省掩膜板的数量。
基于以上结构，在一些实施例中，如图4G和图4H所示，在衬底11上形成第三颜色发光层133a_3的步骤包括：
S504、在形成有第二材料层30的衬底上形成第五薄膜700，第五薄膜700包括第三量子点发光材料。
其中，第三量子点发光材料可以是具有可交联的配体(如A配体：R-2-氨基-3-(S-硫代丁基)丙酸)的量子点发光材料。A配体配位的量子点发光材料可以通过油酸配位的量子点发光材料通过配体交换反应制备获得。第三量子点发光材料示例的可以是蓝色量子点发光材料。
S505、对第五薄膜700位于第三发光器件13c所在区域的部分进行电磁辐射，改变第五薄膜700位于第三发光器件13c所在区域的部分的溶解度。
如在电磁辐射下，第五薄膜700位于第三发光器件13c所在区域的部分所包含的第三量子点发光材料交联成网状。
其中，电磁辐射的定义可以参照上述描述，在此不再赘述。
以第三量子点发光材料为A配体配位的蓝色量子点发光材料为例，可以采用紫外光对第五薄膜700位于第三发光器件13c所在区域的部分进行照射，使第五薄膜700位于第三发光器件13c所在区域的部分所包含的第三量子点发光材料发生交联反应生成网状。而未被紫外光照射的部分所包含的第三量子点发光材料之间不发生交联，或者仅有少量发生交联。
S506、对第五薄膜700位于第三发光器件13c所在区域以外的部分进行溶解，使第五薄膜700在第三发光器件13c所在区域以外的区域无覆盖(如图4G中得到的结构所示)，或者，使第五薄膜700在第三发光器件13c所在区域以外的区域形成厚度小于5nm的残留部(如图4H中得到的结构所示)。
也即，在交联完成后，可以根据发生交联反应后的第三量子点发光材料和未发生交联反应的第三量子点发光材料在溶剂中的溶解度不同，选择合适的溶剂将第五薄膜700位于第三发光器件13c所在区域以外的部分进行溶解掉。这时，可能是因为第三颜色发光层133a_3的材料与第一颜色发光层133a_1的材料和第二颜色发光层133a_2的材料性质较为相近，在采用有机溶剂对第三颜色发光层133a_3形成在第三发光器件13c所在区域以外的部分进行溶解时，更有利于将第三颜色发光层133a_3形成在第三发光器件13c所在区域以外的部分去除掉，从而使得第三颜色发光层133a_3在第三发光器件13c所在区域无覆盖或者仅有少量的残留，且该残留不会对显示造成影响。
在此，需要说明的是，若第二材料层30与第一材料层10连接为连续的结构，则在步骤S403中，由于第二颜色发光层133a_2与第二材料层30的材料性质的差异，使得第二颜色发光层133a_2在第二材料层30上形成残留，从而得到如图4I中步骤S403所示的结构。而与第二材料层30不同的，由于第二颜色发光层133a_2和第一颜色发光层133a_1的材料相近，因此，如图4I中步骤S403所示，第二颜色发光层133a_2在第一发光器件13a所在区域无覆盖，或者，如图4J中步骤S403所示，第二颜色发光层133a_2在第一发光器件13a所在区域形成残留，且第二颜色发光层133a_2位于第一发光器件13a所在区域的残留部的厚度小于第二颜色发光层133a_2位于第三发光器件13c所在区域的残留部的厚度。
有两种可能的情形，第一种情形，如图4I中S403得到的结构所示，第二颜色发光层133a_2仅设置在第二发光器件13b所在区域，这时，若直接使第三颜色发光层133a_3设置在第二材料层30上，则可以避免第一颜色发光层133a_1设置在第三发光器件13c所在区域的部分发光而产生混色。第二种情 形，如图4J中S403得到的结构所示，第二颜色发光层133a_2还设置在第三发光器件13c所在区域，这时，若直接在第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分上形成第三颜色发光层133a_3，则第三颜色发光层133a_3与第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分直接接触，虽然能够避免第一颜色发光层133a_1设置在第三发光器件13c所在区域的部分发光而产生混色，但是，若第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分发光，则仍然会产生混色。
基于此，在一些实施例中，在第二颜色发光层133a_2还包括形成在第三发光器件13c所在区域的残留部(也即第二颜色发光层133a_2设置在第三发光器件13c所在区域的部分)，且第二颜色发光层133a_2形成在第三发光器件13c所在区域的残留部位于第二材料层30和第三颜色发光层133a_3之间的情况下，第三发光器件13c还包括设置于第二材料层30和第三颜色发光层133a_3之间的第三材料层40；此时，制备方法还包括：
在形成第三颜色发光层133a_3的步骤之前，S60、形成第三材料层40。
其中，如图4K所示，形成第三材料层40的步骤包括：
S601、在形成有第二颜色发光层133a_2的衬底上形成第六薄膜800。
其中，第六薄膜800的材料包括电子传输材料或空穴传输材料。
其中，与上述相类似地，在第一电极131为阳极的情况下，第六薄膜800的材料包括空穴传输材料，在第一电极131为阴极的情况下，第六薄膜800的材料包括电子传输材料。
其中，由于上述第三材料层40仅设置在第三发光器件13c所在区域，因此，电子传输材料或空穴传输材料可以是通过在电磁辐射下可发生溶解度改变的材料，这样，可以根据后续改变溶解度的部分和未改变溶解度的部分的溶解度不同将未改变溶解度的部分去除完全。
在一些实施例中，电子传输材料的结构通式如下式(I)所示：
Figure PCTCN2021118275-appb-000016
其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种。
其中，电子传输材料的具体结构可以参照上述对式(I)的描述，在此不再赘述。
在另一些实施例中，空穴传输材料的结构通式如下式(II)所示：
Figure PCTCN2021118275-appb-000017
其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
其中，空穴传输材料的具体结构可以参照上述对式(II)的描述，在此不再赘述。
S602、对第六薄膜800位于第三发光器件13c所在区域的部分进行电磁辐射，改变第六薄膜800位于所述第三发光器件13c所在区域的部分的溶解度。
如在电磁辐射下，第六薄膜800位于所述第三发光器件13c所在区域的部分所包含的电子传输材料或空穴传输材料交联成网状。
这里，需要说明的是，由于第六薄膜800所包括的材料和第一薄膜400所包括的材料基本相同，因此，对第六薄膜800位于第三发光器件13c所在区域的部分进行电磁辐射可以参照上述对第一薄膜400位于第二发光器件13b所在区域的部分进行电磁辐射的描述，在此不再赘述。
S603、对第六薄膜800位于第三发光器件13c所在区域以外的部分进行溶解，将第六薄膜800位于第三发光器件13c所在区域以外的部分去除，得到第三材料层40。
具体也可参照上述对第一薄膜400位于第二发光器件13b所在区域以外的部分进行溶解的描述，在此不再赘述。
另外，在制备完第三材料层40之后，形成第三颜色发光层133a_3，得到如图4L、图4M和图4N所示的结构。该步骤可以参照上述在形成有第二材料层30的衬底11上形成第三颜色发光层133a_3的描述，在此不再赘述。
S70、在形成有第三颜色发光层133a_3的衬底11上形成电子传输层133c或空穴传输层133b。
其中，在第一电极131为阳极的情况下，形成电子传输层133c，在第一 电极131为阴极的情况下，形成空穴传输层133b。
S80、在形成有电子传输层133c或空穴传输层133b的衬底11上形成电子注入层133c或空穴注入层133b。
其中，在第一电极131为阳极的情况下，形成电子注入层133c，在第一电极为阴极的情况下，形成空穴注入层133b。
S90、在形成有电子注入层133c或空穴注入层133b的衬底11上形成第二电极132。第二电极132可以整层覆盖。
其中，在第一电极131为阳极的情况下，第二电极132为阴极，在第一电极131为阴极的情况下，第二电极132为阳极。
当然，还可以包括形成封装层。该封装层的材料可以为紫外固化胶，在紫外光激发下，使紫外固化胶固化对发光器件进行封装。
其中，上述仅是以在空穴注入层133d或电子注入层133e的衬底11上形成量子点发光材料进行的示例，本领域技术人员能够理解的是，在形成空穴注入层133或电子注入层133e之后，在形成量子点发光材料之前，也可以形成空穴传输层133b或电子传输层133c，通过选择合适的材料作为第一材料层10和第二材料层30均能够达到相同的技术效果，在此不再赘述。
其中，空穴传输层133b的材料可以选自TFB(Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine)，聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺))、NPB(N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine，N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4'-二胺)、2,4,6-三[3-(二苯基膦氧基)苯基]-1,3,5-三唑，4,4’,4”–三[N-(萘-2-基)-N-苯基-氨基)]三苯胺，三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷和4,6-双(3,5-二(3-吡啶)基苯基)-2-甲基嘧啶中的任一种或多种。电子传输层133c的材料可以选自氧化镁锌、氧化镓锌和氧化镁铝锌中的任意一种。
另外，上述所述的量子点发光材料中的量子点通常为半导体纳米晶体，形成该半导体纳米晶体的半导体可以包括IV族元素，II-VI族化合物，II-V族化合物，III-VI族化合物，III-V族化合物，IV-VI族化合物，III族化合物。II-IV-VI族化合物，II-IV-V族化合物，包括前述任一项的合金和/或包括前述任一项的混合物，包括三元和四元混合物或合金。其中，量子点发光材料也可以为核壳结构。
可选的，每个配位基团M选自含硫基团、含氮基团和含氧基团中的一种。示例性的，每个配位基团可以为巯基、氨基或羟基等。
示例性的，该量子点发光材料中的量子点包括ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、HgTe、InP、CuInS、CuInSe、CuInSeS和AgInS中的一种或多种。
可选的，该量子点发光材料中的量子点还可以具有核壳结构。其中，核可以包括ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、HgTe、InP、CuInS、CuInSe、CuInSeS和AgInS中的一种或多种。壳可以是具有与核的组成不同的半导体材料，包裹在核的外部。示例性的，在本实施例中，具有核壳结构的量子点包括CdS/ZnS、CdSe/ZnS、CdSe/ZnSeS、CdSe/CdS、ZnSe/ZnS、InP/ZnS、CuInS/ZnS、(Zn)CuInS/ZnS、(Mn)CuInS/ZnS、AgInS/ZnS、(Zn)AgInS/ZnS、CuInSe/ZnS、CuInSeS/ZnS或者PbS/ZnS等。此处，需要说明的是，“/”前为核，“/”后为壳。
在有一些实施例中，该量子点发光材料中的量子点还可以具有配体。此时，该配体与量子点结合。
在本实施例中，该量子点的表面可以具有缺陷位点或者有配体未覆盖的地方，以便于配位基团M与该量子点进行配位。
基于以上具体实施方式，为了对本公开提供的技术方案的技术效果进行客观评价，以下，将对比例和实验例对本公开提供的技术方案进行详细地示例性地描述。
在以下的对比例和实验例中，红色量子点发光材料、绿色量子点发光材料和蓝色量子点发光材料的量子点均为硒化镉/硫化锌核壳结构，配体为A配体(也即R-2-氨基-3-(S-硫代丁基)丙酸)为例进行说明。各量子点发光材料均通过配体交换反应获得，具体的，取1mL原始配体为油酸的量子点发光材料(浓度为20mg/ml)的辛烷溶液，吹干溶剂后用氯仿溶解并向其中加入0.33ml A配体(R-2-氨基-3-(S-硫代丁基)丙酸)，室温下(25℃～35℃)搅拌4小时完成配体交换，之后使用8ml甲醇对量子点发光材料进行沉淀，离心后弃去上清液；使用1ml氯仿溶解量子点发光材料，加入8ml甲醇对其进行沉淀，离心后丢弃上清液，80℃真空抽干后得到量子点发光材料的粉末。将量子点发光材料的粉末溶于甲苯中配制成浓度为5mg/ml的溶液，即得各量子点发光材料的溶液。
对比例1
对比例1制备的是“正置”式底发射型发光基板，具体制备方法如下：
步骤1)在ITO(Indium Tin Oxides，氧化铟锡)基板(形成有ITO电极(作为阳极)的衬底)上，在空气中旋涂氧化镍纳米粒子(旋涂的转速2000rpm， 时间30s，氧化镍纳米粒子的浓度25mg/ml)，120℃退火5min，在ITO基板上形成空穴注入层。
步骤2)在空气中旋涂红色量子点发光材料的溶液(旋涂的转速3000rpm，时间30s)，其中加入5％wt的2,4-双(三氯甲基)-6-对甲氧基苯乙烯基-S-三嗪作为光致生酸剂，完成旋涂后UV(ultraviolet，紫外线)曝光150mj(曝光时采用的能量是150mj)，曝光完后使用氯仿对膜层进行显影，显影完成后120℃退火20min，形成红色量子点膜层(HOMO为-5.9ev左右，LUMO为-3.9ev左右)，红色量子点膜层在发红光的发光器件所在区域的厚度为20nm，在发绿色的光的发光器件和发蓝色的光的发光器件所在区域的厚度为10nm。
步骤3)在空气中旋涂绿色量子点发光材料的溶液(旋涂的转速3000rpm，时间30s)，其中加入5％wt的2,4-双(三氯甲基)-6-对甲氧基苯乙烯基-S-三嗪作为光致生酸剂，完成旋涂后UV曝光150mj，曝光完后使用氯仿对膜层进行显影，显影完成后120℃退火20min形成图案化的绿色量子点膜层(HOMO能级为-6.1ev左右，LUMO能级为-3.85eV左右)绿色量子点膜层在发绿色的光的发光器件所在区域的厚度约为25nm，在发红色的光的发光器件和发蓝色的光的发光器件所在区域几乎无残留。
步骤4)在空气中旋涂蓝色量子点发光材料的溶液(旋涂的转速3000rpm，时间30s)，其中加入5％wt的2,4-双(三氯甲基)-6-对甲氧基苯乙烯基-S-三嗪作为光致生酸剂，完成旋涂后UV曝光150mj，曝光完后使用氯仿对膜层进行显影，显影完成后120℃退火20min形成图案化的蓝色量子点膜层(HOMO能级为-6.2eV左右，LUMO能级为-3.57eV左右)，蓝色量子点膜层在发蓝色的光的发光器件所在区域的厚度约为25nm，在发红色的光的发光器件和发绿色的光的发光器件所在区域几乎无残留。
步骤5)旋涂氧化锌纳米粒子(旋涂的转速3000rpm，时间30s，氧化锌纳米粒子的浓度30mg/ml)，120℃退火20min，得到电子注入层。
步骤6)蒸镀铝电极(阴极)，厚度为120nm，并经过封装后得到发光基板。
实验例1
实验例1中各步骤的制备方法与对比例1中各步骤的制备方法基本相同，不同的是，在步骤2)和步骤3)之间，加入在发绿色的光的发光器件所在区域形成空穴传输图案一的步骤，形成上述所述的第一材料层10。以及在步骤3)和步骤4)之间，加入在发蓝色的光的发光器件所在区域形成空穴传输图案二的步骤，形成上述所述的第二材料层30。
具体的，在步骤2)之后，旋涂空穴传输材料B1的氯苯溶液，空穴传输材料B1的浓度为15mg/ml，旋涂的转速为2500rpm，空穴传输材料B1的HOMO能级大约为-5.8ev左右，旋涂完成后使用365nm的紫外光对空穴传输材料进行曝光(曝光时采用的能量是50mj)，曝光完成后使用氯苯对膜层进行显影，显影完成后，得到设置在发绿色的光的发光器件所在区域的空穴传输图案一。
在步骤3)之后，旋涂空穴传输材料B2氯苯溶液，空穴传输材料B2的浓度为15mg/ml，旋涂的转速为2500rpm，空穴传输材料B2的HOMO能级大约为-5.9ev左右。旋涂完成后使用365nm进行曝光(曝光时采用的能量是50mj)，曝光完成后使用氯苯对膜层进行显影，显影完成后，得到设置在发蓝色的光的发光器件所在区域的空穴传输图案二。
B1和B2的结构如下所示：
Figure PCTCN2021118275-appb-000018
实验例2
实验例2中各步骤的制备方法与实验例1中各步骤的制备方法基本相同，不同的是，空穴传输图案一制备时采用空穴传输材料C1的氯苯溶液，空穴传输材料C1的HOMO能级大约为-5.8ev左右。空穴传输图案二制备时采用空穴传输材料C2的氯苯溶液，空穴传输材料C2的HOMO能级大约为-5.95ev左右。
C1和C2的结构如下所示：
Figure PCTCN2021118275-appb-000019
对比例2
对比例2中各步骤的制备方法与对比例1中各步骤的制备方法基本相同，不同的是，对比例2制备的是“正置”式顶发射型发光基板，在步骤1)中阳极采用ITO/Ag/ITO的叠层结构，步骤6)中溅射氧化铟镓锌(IGZO，indium gallium zinc oxide)作为阴极，厚度为50nm。
实验例3
实验例3中各步骤的制备方法与对比例1中各步骤的制备方法基本相同，不同的是，在步骤2)和步骤3)之间，加入在发绿色的光的发光器件所在区域形成空穴传输图案一的步骤，形成上述所述的第一材料层10。以及在步骤3)和步骤4)之间，加入在发蓝色的光的发光器件所在区域形成空穴传输图案二的步骤，形成上述所述的第二材料层30。
空穴传输图案一和空穴传输图案二的制备方法具体可参照上述实验例1中的描述，在此不再赘述。
对比例3
对比例3中各步骤的制备方法与对比例1中各步骤的制备方法基本相同，不同的是，对比例3还在步骤1)和步骤2)之间加入制备空穴传输层的步骤，具体的，在步骤1)之后，旋涂交联型TFB的氯苯溶液(浓度10mg/ml，含有5％交联剂，旋涂的转速2000rpm，时间30s)，旋涂完后使用365nm的UV光照射300mj，形成空穴传输层，并在170℃退火15min。
TFB的结构式如下所示：
Figure PCTCN2021118275-appb-000020
实验例4
实验例4中各步骤的制备方法与对比例1中各步骤的制备方法基本相同，不同的是，在步骤2)和步骤3)之间，加入在发绿色的光的发光器件所在区域形成空穴传输图案一的步骤，形成上述所述的第一材料层10。以及在步骤3)和步骤4)之间，加入在发蓝色的光的发光器件所在区域形成空穴传输图案二的步骤，形成上述所述的第二材料层30。
空穴传输图案一和空穴传输图案二的制备方法具体可参照上述实验例1中的描述，在此不再赘述。
对比例4
对比例4制备的是“倒置”式底发射型发光基板，具体制备方法如下：
步骤1)在ITO基板(形成有ITO电极作为阴极的衬底)上，在空气中旋涂氧化锌纳米粒子(旋涂的转速2000rpm，时间30s，氧化锌纳米粒子的浓度25mg/ml)，120℃退火10min，在ITO基板上形成电子注入层。
步骤2)、步骤3)和步骤4)可参照上述对比例1中步骤2)、步骤3)和步骤4)的制备方法，在此不再赘述。
步骤5)通过蒸镀制备空穴传输层和空穴注入层。
步骤6)蒸镀银电极作为阳极，厚度为120nm，并经过封装后得到发光基板。
实验例5
实验例5中各步骤的制备方法与对比例4中各步骤的制备方法基本相同，不同的是，在步骤2)和步骤3)之间，加入在发绿色的光的发光器件所在区域形成电子传输图案一的步骤，形成上述所述的第一材料层10。以及在步骤3)和步骤4)之间，加入在发蓝色的光的发光器件所在区域形成电子传输图案二的步骤，形成上述所述的第二材料层30。
具体的，在步骤2)之后，旋涂电子传输材料D1的氯苯溶液，电子传输 材料D1的浓度为15mg/ml，旋涂的转速为2500rpm，电子传输材料D1的LUMO能级大约为-3.4eV左右，旋涂完成后使用365nm的紫外光对电子传输材料D1进行曝光(曝光时采用的能量是50mj)，曝光完成后使用氯苯对膜层进行显影，显影完成后，得到设置在发绿色的光的发光器件所在区域的电子传输图案一。
在步骤3)之后，旋涂电子传输材料D1的氯苯溶液，电子传输材料D1的浓度为15mg/ml，旋涂的转速为2500rpm，电子传输材料D1的LUMO能级大约为-3.4eV左右。旋涂完成后使用365nm进行曝光(曝光时采用的能量是50mj)，曝光完成后使用氯苯对膜层进行显影，显影完成后，得到设置在发蓝色的光的发光器件所在区域的电子传输图案二。
D1的结构如下所示：
Figure PCTCN2021118275-appb-000021
将上述实验例和对比例进行色度测试后发现：在插入第一材料层10和第二材料层30之后，可以减少混色，提高色纯度，并提高色域。
在此，为了对本公开的实施例进行更充分地说明，将对上述所列举的电子传输材料D1和空穴传输材料B1、B2、C1和C2的制备方法进行示例性地说明。
1、B1的反应方程式和制备方法如下所示：
B1的反应方程式：
Figure PCTCN2021118275-appb-000022
B1的制备方法：
步骤1)将二溴三苯胺(1mmol)与双联频哪醇二硼(1.05mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(1)。
步骤2)将二溴三苯胺(1mmol)与产物(1)(1.05mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(2)。
步骤3)将产物(2)(1mmol)与N-溴代琥珀酰亚胺(NBS，1.2mmol)置于三口烧瓶中，加入100mlN,N-二甲基甲酰胺后，室温反应24小时后，倒入水中析出后，使用索氏提取器和甲苯将多余的NBS除去，再通过聚合物柱层析得到产物(3)。
步骤4)将产物(3)(1mmol)与双联频哪醇二硼(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，使用索氏提取器和甲苯将多余的双联频哪醇二硼除去，再通过聚合物柱层析得到产物(4)。
步骤5)将产物(4)(1mmol)与乙烯基溴(1.1mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩 气保护下90度反应12小时，反应完成后倒入水中析出，使用索氏提取器和甲苯将多余的乙烯基溴除去，再通过聚合物柱层析得到产物(5)。
2、B2的反应方程式和制备方法如下所示：
B2的反应方程式：
Figure PCTCN2021118275-appb-000023
B2的制备方法：
步骤1)将二溴三苯胺(1mmol)与双联频哪醇二硼(1.05mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(1)。
步骤2)将二溴三苯胺(1mmol)与产物(1)(1.05mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(2)。
步骤3)将产物(2)(1mmol)与N-溴代琥珀酰亚胺(NBS，1.2mmol)置于三口烧瓶中，加入100mlN,N-二甲基甲酰胺后，室温反应24小时后，倒入水中析出后，使用索氏提取器和甲苯将多余的NBS除去，再通过聚合物柱层析得到产物(3)。
步骤4)将产物(3)(1mmol)与丙烯酸(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，在氩气保 护下升温至100度回流反应12小时，反应完成后倒入水中析出，使用索氏提取器和甲苯将多余的丙烯酸除去，再通过聚合物柱层析得到产物(4)。
3、C1的反应方程式和制备方法如下所示：
C1的反应方程式：
Figure PCTCN2021118275-appb-000024
C1的制备方法：
步骤1)将2,2'-二硝基二苯胺(1mmol)与乙烯基溴(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(1)。
步骤2)将产物(1)(1mmol)与N-溴代琥珀酰亚胺(NBS，1.2mmol)置于三口烧瓶中，加入100mlN,N-二甲基甲酰胺后，室温反应24小时后，倒入水中析出后，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(2)。
步骤3)将产物(2)(1mmol)与双联频哪醇二硼(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(3)。
步骤4)将产物(2)(1mmol)与产物(3)(1.05mmol)置于250ml 三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用索氏提取器和甲苯将多余的单体反应物除去，再通过聚合物柱层析得到产物(4)。
4、C2的反应方程式和制备方法如下所示：
C2的反应方程式：
Figure PCTCN2021118275-appb-000025
C2的制备方法：
步骤1)将二(4-溴苯基)胺(1mmol)与乙烯基溴(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(1)。
步骤2)将产物(1)(1mmol)与双联频哪醇二硼(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(2)。
步骤3)将产物(1)(1mmol)与产物(2)(1.05mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用索氏提取器和甲苯将多余的单体反应物除去，再通过聚合物柱层析得到产物(3)。
5、D1的反应方程式和制备方法如下所示：
D1的反应方程式：
Figure PCTCN2021118275-appb-000026
D1的制备方法：
步骤1)将产物对二溴苯(1mmol)与双联频哪醇二硼(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(1)。
步骤2)将产物(1)(1mmol)与乙烯基溴(1.05mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(2)。
步骤3)将产物(2)(1mmol)与浓硝酸(4mmol)置于250ml三口烧瓶中，加入浓硫酸(2mmol)，，在氩气保护下60度反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(3)。
步骤4)将苯并咪唑(1mmol)与N-溴代琥珀酰亚胺(NBS，1.2mmol)置于三口烧瓶中，加入100mlN,N-二甲基甲酰胺后，室温反应24小时后，倒入水中析出后，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析 进行过滤，得到产物(4)。
步骤5)将产物(4)(1mmol)与双联频哪醇二硼(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，0.1g1,1'-双二苯基膦二茂铁二氯化钯，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，过滤后使用二氯甲烷和水进行萃取，萃取三次后使用柱层析进行过滤，得到产物(5)。
步骤6)将产物(4)(1mmol)与产物(5)(1.05mmol)置于250ml三口烧瓶中，加入碳酸钠(1.05mmol)，四三苯基膦钯0.1g，100ml甲苯后，在氩气保护下90度反应12小时，反应完成后倒入水中析出，过滤后使用索氏提取器和甲苯将多余的单体反应物除去，再通过聚合物柱层析得到产物(6)。
步骤7)将产物(6)(1mmol)与产物(3)(1.1mmol)置于250ml三口烧瓶中，加入1.2mmol氢氧化钾，100mlN,N-二甲基甲酰胺(DMF)，在氩气保护下升温至100度回流反应12小时，反应完成后倒入水中析出，使用索氏提取器和甲苯将多余的二硝基对溴苯乙烯除去，再通过聚合物柱层析得到产物(7)。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (29)

  1. 一种发光基板，包括：
    衬底；
    多个发光器件，设置于所述衬底上；
    所述多个发光器件包括：至少一个第一发光器件和至少一个第二发光器件，所述至少一个第一发光器件包括：具有第一厚度的第一颜色发光层，所述至少一个第二发光器件包括具有第二厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠设置在所述第二发光器件所包含的所述第一颜色发光层上的第一材料层和第二颜色发光层；
    其中，所述第二厚度小于所述第一厚度；且在所述第二发光器件中，所述第一材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的电子进行阻挡，或者，所述第一材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的空穴进行阻挡。
  2. 根据权利要求1所述的发光基板，其中，
    所述至少一个第二发光器件还包括：设置于所述第二发光器件所包含的所述第一颜色发光层靠近所述衬底一侧的电子传输层，所述第一材料层的材料包括具有电子传输功能的材料；
    或者，
    所述至少一个第二发光器件还包括：设置于所述第二发光器件所包含的所述第一颜色发光层靠近所述衬底一侧的空穴传输层，所述第一材料层的材料包括具有空穴传输功能的材料。
  3. 根据权利要求2所述的发光基板，其中，
    在所述至少一个第二发光器件还包括电子传输层的情况下，所述第一材料层的材料与所述电子传输层的材料不同；
    在所述至少一个第二发光器件还包括空穴传输层的情况下，所述第一材料层的材料与所述空穴传输层的材料不同。
  4. 根据权利要求1～3任一项所述的发光基板，其中，
    所述第二颜色发光层仅设置在所述第二发光器件所在区域；
    或者，
    所述第二颜色发光层包括设置在所述第二发光器件所在区域的第一部分和设置在所述第一发光器件所在区域的第二部分，所述第二部分位于所述第一发光器件所包含的第一颜色发光层之上，且与所述第一颜色发光层接触，所述第一部分具有第三厚度，所述第二部分具有第四厚度，所述第四厚度小 于所述第三厚度。
  5. 根据权利要求4所述的发光基板，其中，
    所述第四厚度小于所述第二厚度。
  6. 根据权利要求1～5任一项所述的发光基板，其中，
    所述第一颜色发光层的材料和所述第二颜色发光层的材料均包括量子点发光材料。
  7. 根据权利要求1～6任一项所述的发光基板，其中，
    所述多个发光器件还包括：至少一个第三发光器件；
    所述至少一个第三发光器件包括：具有第五厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠设置于所述第三发光器件所包含的所述第一颜色发光层之上的第二材料层和第三颜色发光层，其中，所述第五厚度小于所述第一厚度，且在所述第三发光器件中，所述第二材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的电子进行阻挡，或者，所述第二材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的空穴进行阻挡。
  8. 根据权利要求7所述的发光基板，其中，
    所述第二材料层和所述第一材料层连接为连续的结构。
  9. 根据权利要求8所述的发光基板，其中，
    在所述第二颜色发光层包括第一部分和第二部分的情况下，所述第二颜色发光层还包括设置在所述第三发光器件所在区域的第三部分，且所述第三部分位于所述第二材料层和所述第三颜色发光层之间。
  10. 根据权利要求9所述的发光基板，其中，
    所述第三发光器件还包括第三材料层，所述第三材料层位于所述第三部分和所述第三颜色发光层之间，所述第三材料层被配置为将从所述第三部分传输的空穴传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的电子进行阻挡，或者，所述第二材料层被配置为将从所述第三部分传输的电子传输至所述第三颜色发光层，并对从所述第三颜色发光层传输的空穴进行阻挡。
  11. 根据权利要求7所述的发光基板，其中，
    所述第二材料层的材料和所述第一材料层的材料不同。
  12. 根据权利要求7～11任一项所述的发光基板，其中，
    所述第三颜色发光层仅设置在所述第三发光器件所在区域；
    或者，
    所述第三颜色发光层包括设置在所述第三发光器件所在区域的第三部分，以及设置在所述第一发光器件所在区域的第四部分和设置在所述第二发光器件所在区域的第五部分，且所述第四部分位于所述第一发光器件所包含的第一颜色发光层或第二颜色发光层之上，且与所述第一颜色发光层或所述第二颜色发光层接触，所述第五部分位于所述第二发光器件所包含的第二颜色发光层之上，且与所述第二颜色发光层接触，所述第三部分具有第六厚度，所述第四部分和所述第五部分具有第七厚度，所述第七厚度小于所述第六厚度。
  13. 根据权利要求7～12任一项所述的发光基板，其中，
    所述第三颜色发光层的材料包括量子点发光材料。
  14. 根据权利要求1～13任一项所述的发光基板，其中，
    所述第一材料层通过至少一种电子传输材料在电磁辐射下制备获得；所述电子传输材料的结构通式如下式(I)所示：
    Figure PCTCN2021118275-appb-100001
    其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种；
    或者，
    所述第一材料层通过至少一种电子传输材料在电磁辐射下制备获得；所述空穴传输材料的结构通式如下式(II)所示：
    Figure PCTCN2021118275-appb-100002
    其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
  15. 一种发光装置，包括：如权利要求1～14任一项所述的发光基板。
  16. 一种发光基板的制备方法，包括：
    在衬底上形成多个发光器件，所述多个发光器件包括至少一个第一发光器件和至少一个第二发光器件；
    所述至少一个第一发光器件包括：具有第一厚度的第一颜色发光层，所述至少一个第二发光器件包括具有第二厚度的所述第一颜色发光层，以及沿远离所述衬底的方向依次层叠形成在所述第一发光器件所包含的所述第一颜色发光层上的第一材料层和第二颜色发光层；
    其中，所述第二厚度小于所述第一厚度；且在所述第二发光器件中，所述第一材料层被配置为将从所述第一颜色发光层传输的空穴传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的电子进行阻挡，或者，所述第一材料层被配置为将从所述第一颜色发光层传输的电子传输至所述第二颜色发光层，并对从所述第二颜色发光层传输的空穴进行阻挡。
  17. 根据权利要求16所述的发光基板的制备方法，其中，
    形成所述第一材料层的步骤包括：
    在形成有第一颜色发光层的衬底上形成第一薄膜；
    对所述第一薄膜进行图案化，以在所述第二发光器件所在区域形成所述第一材料层。
  18. 根据权利要求17所述的发光基板的制备方法，其中，
    对所述第一薄膜进行图案化，包括：
    对所述第一薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，改变所述第一薄膜位于所述第二发光器件所在区域的部分的溶解度；
    对所述第一薄膜位于所述第二发光器件所在区域以外的部分进行溶解，将所述第一薄膜位于所述第二发光器件所在区域以外的部分去除。
  19. 根据权利要求17或18所述的发光基板的制备方法，其中，
    所述第一薄膜的材料为电子传输材料或空穴传输材料；
    所述电子传输材料的结构通式如下式如下式(I)所示：
    Figure PCTCN2021118275-appb-100003
    其中，A选自三价的取代或未取代的吸电子基团中的任一种，B选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在A中，取代的取代基选自硝基、羟基和烷基中的任一种；
    所述空穴传输材料的结构通式如下式(II)所示：
    Figure PCTCN2021118275-appb-100004
    其中，C选自三价的取代或未取代的给电子基团中的任一种，D选自能够在电磁辐射下改变溶解度的基团，n为大于或等于1的整数，在C中，取代的取代基选自硝基、羟基和烷基中的任一种。
  20. 根据权利要求16～19任一项所述的发光基板的制备方法，其中，
    形成所述第一颜色发光层的步骤包括：
    在所述衬底上形成第二薄膜，所述第二薄膜包括第一量子点发光材料；
    对所述第二薄膜位于所述第一发光器件所在区域的部分进行电磁辐射，改变所述第二薄膜位于所述第一发光器件所在区域的部分的溶解度；
    对所述第二薄膜位于所述第一发光器件所在区域以外的部分进行溶解，得到所述第一发光器件所包含的具有第一厚度的所述第一颜色发光层和所述第二发光器件所包含的具有第二厚度的所述第一颜色发光层。
  21. 根据权利要求16～20任一项所述的发光基板的制备方法，其中，
    形成所述第二颜色发光层的步骤包括：
    在形成有所述第一材料层的衬底上形成第三薄膜，所述第三薄膜包括第二量子点发光材料；
    对所述第三薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，改变所述第三薄膜位于所述第二发光器件所在区域的部分的溶解度；
    对所述第三薄膜位于所述第二发光器件所在区域以外的部分进行溶解，使所述第三薄膜在所述第二发光器件所在区域以外的区域无覆盖，或者，使所述第三薄膜在所述第二发光器件所在区域以外的区域形成厚度小于5nm的残留部。
  22. 根据权利要求16～21任一项所述的发光基板的制备方法，其中，所述发光基板还包括：至少一个第三发光器件，所述至少一个第三发光器件包括具有第五厚度的第一颜色发光层，以及沿远离衬底的方向依次层叠设置于所述第三发光器件所包含的所述第一颜色发光层之上的第二材料层和第三颜色发光层，所述制备方法还包括：
    在衬底上依次形成所述第二材料层和所述第三颜色发光层的步骤。
  23. 根据权利要求22所述的发光基板的制备方法，其中，所述第二材料层的材料和所述第一材料层的材料不同，在衬底上形成所述第二材料层的步骤包括：
    在形成有所述第二颜色发光层的衬底上形成第四薄膜；
    对所述第四薄膜进行图案化，以在所述第三发光器件所在区域形成所述第二材料层。
  24. 根据权利要求23所述的发光基板的制备方法，其中，
    所述对所述第四薄膜进行图案化，包括：
    对所述第四薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第四薄膜位于所述第三发光器件所在区域的部分的溶解度；
    对所述第四薄膜位于所述第三发光器件所在区域以外的部分进行溶解，将所述第四薄膜位于所述第三发光器件所在区域以外的部分去除。
  25. 根据权利要求22所述的发光基板的制备方法，其中，所述第二材料层和所述第一材料层连接成连续的结构，在衬底上形成所述第二材料层的步骤包括：
    在对所述第一薄膜位于所述第二发光器件所在区域的部分进行电磁辐射，的同时，还对所述第一薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第一薄膜位于所述第三发光器件所在区域的部分的溶解度。
  26. 根据权利要求21～25任一项所述的发光基板的制备方法，其中，在衬底上形成所述第三颜色发光层的步骤包括：
    在形成有所述第二材料层的衬底上形成第五薄膜，所述第五薄膜包括第三量子点发光材料；
    对所述第五薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第五薄膜位于所述第三发光器件所在区域的部分的溶解度；
    对所述第五薄膜位于所述第三发光器件所在区域以外的部分进行溶解，使所述第五薄膜在所述第三发光器件所在区域以外的部分无覆盖，或者，使所述第五薄膜在所述第三发光器件所在区域以外的区域形成厚度小于5nm的残留部。
  27. 根据权利要求21～26任一项所述的发光基板的制备方法，其中，在所述第二颜色发光层还包括形成在所述第三发光器件所在区域的残留部，且所述第二颜色发光层形成在所述第三发光器件所在区域的残留部位于所述第二材料层和所述第三颜色发光层之间的情况下，所述第三发光器件还包括设置于所述第二材料层和所述第三颜色发光层之间的第三材料层；所述制备方 法还包括：
    在形成所述第三颜色发光层的步骤之前，形成所述第三材料层。
  28. 根据权利要求27所述的发光基板的制备方法，其中，
    形成所述第三材料层的步骤包括：
    在形成有所述第二颜色发光层的衬底上形成第六薄膜；
    对所述第六薄膜进行图案化，以在所述第三发光器件所在区域形成所述第三材料层。
  29. 根据权利要求28所述的发光基板的制备方法，其中，
    所述对所述第六薄膜进行图案化，包括：
    对所述第六薄膜位于所述第三发光器件所在区域的部分进行电磁辐射，改变所述第六薄膜位于所述第三发光器件所在区域的部分的溶解度；
    对所述第六薄膜位于所述第三发光器件所在区域以外的部分进行溶解，将所述第六薄膜位于所述第三发光器件所在区域以外的部分去除。
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