WO2023022210A1 - 基板洗浄装置、基板洗浄方法及び基板研磨装置 - Google Patents

基板洗浄装置、基板洗浄方法及び基板研磨装置 Download PDF

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Publication number
WO2023022210A1
WO2023022210A1 PCT/JP2022/031289 JP2022031289W WO2023022210A1 WO 2023022210 A1 WO2023022210 A1 WO 2023022210A1 JP 2022031289 W JP2022031289 W JP 2022031289W WO 2023022210 A1 WO2023022210 A1 WO 2023022210A1
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WIPO (PCT)
Prior art keywords
substrate
cleaning
cleaning liquid
supply unit
liquid supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/031289
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English (en)
French (fr)
Japanese (ja)
Inventor
直廉 半田
聡美 ▲浜▼田
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Ebara Corp
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Ebara Corp
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Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to US18/683,735 priority Critical patent/US20240351078A1/en
Publication of WO2023022210A1 publication Critical patent/WO2023022210A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Definitions

  • the present invention relates to an apparatus and method for cleaning a substrate after polishing.
  • CMP chemical mechanical polishing
  • a polishing apparatus that polishes a substrate is equipped with a substrate cleaning apparatus that cleans the surface of the substrate after polishing (see, for example, Japanese Unexamined Patent Application Publication No. 2001-35821).
  • substrate cleaning the substrate is cleaned by rotating the substrate after polishing and rotating a cleaning tool such as a roll sponge or pen sponge while spraying a chemical solution onto the substrate.
  • a cleaning tool such as a roll sponge or pen sponge
  • DIW pure water
  • the pH of the cleaning liquid supplied to the substrate surface is adjusted to the basic side in order to prevent particles from adhering to the substrate.
  • the flow velocity of the cleaning liquid in the vicinity of the substrate surface becomes very small. Therefore, it is difficult to discharge the particles floating in the cleaning liquid on the substrate surface to the outside of the substrate even by the rinsing process. there were.
  • the cleaning liquid with particles adhering thereto may drop from the cleaning tool onto the substrate during the rinsing process. As a result, particles adhering to the substrate remain during the rinsing process, possibly degrading the quality of the substrate after the polishing/cleaning process.
  • One aspect of the present invention is a substrate cleaning apparatus that performs scrub cleaning by bringing a cleaning tool into sliding contact with the surface of the substrate while rotating the substrate, wherein the cleaning tool is withdrawn from the surface of the substrate after the scrub cleaning. and a cleaning liquid supply unit for rinsing the substrate after scrub cleaning by spraying the cleaning liquid onto the surface of the substrate, wherein the temperature of the cleaning liquid in the rinsing process is 0°C to 20°C. It is characterized by being set.
  • One aspect of the present invention is a substrate cleaning apparatus that performs scrub cleaning by bringing a cleaning tool into sliding contact with the surface of the substrate while rotating the substrate, wherein a cleaning liquid is sprayed onto the surface of the substrate to clean the surface of the substrate after scrub cleaning.
  • a cleaning liquid supply unit for rinsing the substrate is provided, and the cleaning liquid supply unit includes a first cleaning liquid supply unit that supplies cleaning liquid toward the vicinity of the center of the substrate, and a cleaning liquid supply unit that supplies the cleaning liquid toward the vicinity of the center of the substrate and an area between the center and the edge of the substrate.
  • a second cleaning liquid supply unit configured to spray the cleaning liquid toward the surface of the substrate, wherein the injection angle of the cleaning liquid from the first cleaning liquid supply unit onto the surface of the substrate is defined as a first injection angle, and the second cleaning liquid onto the surface of the substrate.
  • the first injection angle is smaller than the second injection angle when the injection angle of the cleaning liquid by the supply unit is the second injection angle.
  • One aspect of the present invention is a substrate cleaning apparatus that performs scrub cleaning by bringing a cleaning tool into sliding contact with the surface of the substrate while rotating the substrate, wherein a cleaning liquid is sprayed onto the surface of the substrate to clean the surface of the substrate after scrub cleaning.
  • a cleaning liquid supply unit for rinsing the substrate; and a substrate rotation mechanism for rotating the substrate at a predetermined speed, wherein the substrate rotation mechanism rotates the substrate at a first speed during a first period during the rinsing, It is characterized in that the substrate is rotated at a second speed faster than the first speed in a second period following the first period.
  • FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus including a substrate cleaning apparatus according to one embodiment of the present invention
  • FIG. It is a perspective view which shows the structure of a board
  • FIG. 3 is a plan view showing the configuration of the substrate cleaning apparatus of FIG. 2; It is a functional block diagram of a substrate cleaning device. 7 is a graph showing an example of the relationship between the distance from the rotating substrate surface and the flow velocity of the cleaning liquid on the substrate.
  • FIG. 4 is an explanatory diagram showing how particles on a substrate are removed or reattached; 4 is a graph showing the relationship between the liquid temperature on the substrate and the mass transfer coefficient; 4 is a graph showing the relationship between the liquid temperature on the substrate and the ratio of the number of residual particles.
  • FIG. 4 is an explanatory diagram showing an example of the positional relationship between a pin-type nozzle and a spray-type nozzle;
  • FIG. 4 is an explanatory diagram showing the positional relationship between a pin-type nozzle and a spray-type nozzle and the ratio of the number of residual particles; 4 is a graph showing the relationship between the radial position of the substrate and the liquid film thickness on the substrate.
  • FIG. 4 is an explanatory diagram of simulation conditions for substrate rotation speed and rinsing processing;
  • FIG. 4 is an explanatory diagram showing how cleaning liquid flows from the edge of a substrate to the surface.
  • FIG. 1 schematically shows the configuration of a substrate processing apparatus including a substrate cleaning apparatus according to this embodiment.
  • a substrate processing apparatus 10 has a housing 12 and a load port 14 .
  • polishing units 16a to 16d Inside the housing 12 are a plurality of polishing units 16a to 16d for polishing (flattening) the substrate W, a first cleaning unit 18 and a second cleaning unit 20 for cleaning the substrate W after polishing, and a cleaning unit 20 for cleaning the substrate W after polishing.
  • a drying unit 22 for drying the subsequent substrate W is accommodated.
  • the polishing units 16a-16d are arranged along the longitudinal direction of the substrate processing apparatus 10, and the cleaning units 18 and 20 and the drying unit 22 are arranged parallel to the polishing units 16a-16d.
  • a first transfer robot 24 is arranged between the load port 14 and the polishing unit 16a and the drying unit 22 .
  • the first transport robot 24 receives the substrate W before polishing from the load port 14 and transfers it to the transport unit 24 , and also receives the substrate W after drying taken out from the drying unit 22 from the transport unit 24 .
  • a transport unit 26 is arranged between the polishing units 16 a to 16 d and the cleaning units 18 and 20 and the drying unit 22 .
  • a second transport robot 28 is arranged between the first cleaning unit 18 and the second cleaning unit 20 to transfer the substrate W therebetween.
  • a third transfer unit 30 is arranged between the second cleaning unit 20 and the drying unit 22 to transfer the substrate W therebetween.
  • a control unit 32 that controls the movement of each device of the substrate processing apparatus 10 is arranged inside the housing 12 .
  • the control unit 32 is, for example, a general-purpose computer device, and includes a CPU, memory for storing control programs, an input section, a display section, and the like.
  • the control unit 32 also has an input section 34 for receiving an external input.
  • the external input can include mechanical operation by the user and signal input from an external device by wire or wireless.
  • the control unit 32 controls the movement of each device of the substrate processing apparatus 10 by activating the control program stored in the storage section (memory) 36 .
  • a control program for controlling the operation of the substrate processing apparatus 10 may be pre-installed in a computer that constitutes the control unit 32, or may be stored in a storage medium such as a DVD, BD, or SSD. Furthermore, it may be installed in the control unit 32 via the Internet.
  • the cleaning units 18 and 20 of the present embodiment clean the substrate W by contacting the surface of the substrate W while rotating a cleaning tool, which will be described later, and perform a rinsing process by supplying a cleaning liquid after the cleaning process.
  • the cleaning units 18 and 20 may use a two-fluid jet cleaning device that cleans the surface of the substrate W with a two-fluid jet in combination with cleaning tools.
  • the drying unit 22 dries the substrate W by jetting IPA vapor from a nozzle (not shown) toward the rotating substrate W.
  • the substrate W may be dried by centrifugal force by rotating the substrate W at high speed.
  • a substrate cleaning apparatus 40 (corresponding to each of the substrate cleaning units 18 and 20 in FIG. 1) includes a substrate roller drive mechanism 42 for driving a substrate roller 50 that rotates the substrate W, a roll sponge 52 for brushing the substrate, 53, a pure water supply unit 46 for supplying pure water (DIW) as the cleaning liquid, and a chemical liquid supply unit 48 for supplying the chemical liquid as the cleaning liquid.
  • DIW pure water
  • the cleaning liquid examples include a rinse liquid such as pure water (DIW), an alkaline solution (ammonia water, ammonia hydrogen peroxide (SC1)), a surfactant, and a chelating agent, depending on the type of film on the target substrate surface. or a mixed chemical solution thereof can be used.
  • a chemical solution and pure water (DIW) are used as the cleaning liquid.
  • the substrate cleaning apparatus 40 includes four substrate rollers 50 arranged substantially on the same horizontal plane, a pair of substantially cylindrical roll sponges 52 and 53, deionized water (DIW) supply nozzles 54 and 55, a chemical solution supply nozzle 56, 57.
  • the two substrate cleaning apparatuses 40 are isolated from each other by a partition (not shown) or the like, so that the cleaning liquid (chemical solution, pure water) sprayed during the substrate cleaning process does not leak to the outside.
  • a shutter mechanism for taking the substrate W into and out of the substrate cleaning apparatus 40 can be provided on this partition.
  • a combination of the pure water supply nozzle 54 for supplying the cleaning liquid to the vicinity of the center of the substrate W and the chemical liquid supply nozzle 56 is called a first cleaning liquid supply section 61 .
  • a combination of the pure water supply nozzle 55 and the chemical solution supply nozzle 57 for supplying the cleaning solution to the area between the center and the edge of the substrate W is called a second cleaning solution supply part 62 .
  • Each of the substrate rollers 50 has a two-stage structure including a shoulder portion (support portion) 50A and a small-diameter holding portion 50B provided on the shoulder portion 50A.
  • the shoulder portion 50A supports the bottom surface of the substrate W. while holding the side surface (edge portion) of the substrate W by the holding portion 50B.
  • the substrate rollers 50 are movable toward and away from each other by an air cylinder (not shown) provided in the substrate roller driving mechanism 42 . By bringing the substrate rollers 50 close to each other, the substrate W can be held substantially horizontally by the holding portion 50B.
  • At least one of the substrate rollers 50 is configured to be rotationally driven by the substrate roller drive mechanism 42, thereby allowing the substrate W to rotate in the horizontal plane. Further, the rotational speed of the substrate roller 50 (that is, the rotational speed of the substrate W) can be appropriately adjusted by the control unit 32 .
  • the roll sponges 52 and 53 extend in the horizontal plane and come into contact with the substrate W held by the substrate rollers 50 to clean it.
  • the roll sponges 52 and 53 are rotated about their longitudinal direction by the sponge drive mechanism 44 .
  • the roll sponges 52 and 53 are attached to guide rails 58 that guide their vertical movement, and can be moved vertically along the guide rails 58 by a sponge driving mechanism 44. and a position at which the substrate W is retracted.
  • the pure water supply nozzles 54 and 55 are positioned obliquely above the substrate W and supply pure water to the upper surface of the substrate W.
  • the chemical liquid supply nozzles 56 and 57 are positioned obliquely above the substrate W and supply the chemical liquid to the upper surface of the substrate W.
  • the pure water supply nozzles 54 , 55 and the chemical solution supply nozzles 56 , 57 are supported by a support member 60 extending substantially parallel to the longitudinal direction of the roll sponges 52 , 53 .
  • the pure water supply nozzles 54 and 55 are connected to the pure water supply unit 46 via separate pure water supply pipes 64 and 65, respectively, and pure water is individually supplied.
  • the chemical liquid supply nozzles 56 and 57 are connected to the chemical liquid supply unit 48 via separate chemical liquid supply pipes 66 and 67, respectively, and chemical liquids are individually supplied.
  • the pure water supply unit 46 and the chemical solution supply unit 48 have a flow rate adjustment function and a temperature adjustment mechanism, and their operations are controlled by the control unit 32 .
  • the flow rate and temperature of the pure water and the chemical liquid supplied to the pure water supply nozzles 54 and 55 and the chemical liquid supply nozzles 56 and 57 can be appropriately adjusted.
  • the cleaning/rinsing process for the substrate W by the substrate cleaning apparatus 40 is performed as follows.
  • the substrate rollers 50 are positioned apart from each other.
  • the upper roll sponge 52 is held at a position raised from the substrate W transport position, and the lower roll sponge 53 is held at a position lowered from the substrate W transport position.
  • a substrate W transported by a transport unit (not shown) is first placed on the shoulder portion 50A of the substrate roller 50 . Thereafter, the roller drive mechanism 42 is driven to move the substrate rollers 50 toward each other (toward the substrate W), thereby holding the substrate W substantially horizontally by the holding portion 50B.
  • the sponge drive mechanism 44 when the sponge drive mechanism 44 is driven, the upper roll sponge 52 descends and contacts the upper surface of the substrate W, while the lower roll sponge 53 rises and contacts the lower surface of the substrate W.
  • the area including the center of the substrate W is sandwiched between the roll sponges 52 and 53 as shown in FIG.
  • the positions at which the roll sponges 52 and 53 contact the substrate W are not limited to the positions shown in FIG.
  • the pure water supply unit 46 and the chemical solution supply unit 48 are driven, and the pure water and chemical solutions whose flow rate and temperature are adjusted are supplied to the substrate W from the pure water supply nozzles 54 and 55 and the chemical solution supply nozzles 56 and 57. be.
  • the roller driving mechanism 42 and the sponge driving mechanism 44 are driven, and the substrate W is rotated at a set speed in the horizontal plane by the substrate roller 50, while the roll sponges 52 and 53 are rotated about their axes to rotate the substrate W.
  • the upper and lower surfaces of the substrate W are scrubbed by contacting the upper and lower surfaces of the substrate W, respectively.
  • the chemical liquid may be supplied only from the chemical liquid supply nozzles 56 and 57 .
  • the roll sponges 52 and 53 are retracted from the upper and lower surfaces of the substrate W, and pure water and chemical liquid are supplied to the substrate W from the pure water supply nozzles 54 and 55 and the chemical liquid supply nozzles 56 and 57. is rinsed. Details of the rinse process will be described later.
  • the substrate W is unloaded from the substrate cleaning apparatus 40 by a transport unit (not shown).
  • the substrate W is rotating clockwise when viewed from the top side, and the roll sponge 52 above the substrate W is rotating clockwise when viewed from the side.
  • the chemical liquid supply nozzles 56 and 57 are arranged above the pure water supply nozzles 54 and 55, and the cleaning liquid (chemical liquid, pure water) is placed near the area where the roll sponges 52 and 53 contact the substrate W. supply.
  • the directions in which the cleaning liquid is supplied by the pure water supply nozzles 54 and 55 and the chemical liquid supply nozzles 56 and 57 are substantially perpendicular to the longitudinal direction of the roll sponges 52 and 53 .
  • a configuration in which the pure water supply nozzles 54 and 55 are installed above the chemical solution supply nozzles 56 and 57 may also be used. Further, the position where the chemical solution is supplied to the substrate W by the chemical solution supply nozzles 56 and 57 and the position where the pure water supply nozzles 54 and 55 supply the pure water to the substrate W may be the same or different. can be For example, scrub cleaning can be performed more effectively by bringing the position where the chemical solution is sprayed onto the substrate W by the chemical solution supply nozzles 56 and 57 closer to the roll sponges 52 and 53 .
  • the first cleaning liquid supply unit 61 is a so-called pen-type injector, and supplies the cleaning liquid toward the vicinity of the center of the substrate W at a relatively small angle in the width direction substantially perpendicular to the longitudinal direction of the roll sponge 52 .
  • the cleaning liquid from the first cleaning liquid supply part 61 passes between the roll sponge 52 and the substrate W, the contact area between the substrate W and the roll sponge 52 is cleaned. After that, the cleaning liquid penetrates deep into the roll sponge 52 . Since the centrifugal force is not so large near the center of the substrate W, the cleaning liquid is returned toward the roll sponge 52 as the substrate W rotates (see arrow F1 in FIG. 3). As a result, the back side of the upper surface of the substrate W is also cleaned by the roll sponge 52 .
  • the second cleaning liquid supply part 62 is directed to a position slightly away from the center of the substrate W at an angle in the width direction larger than that of the first cleaning liquid supply part 61, substantially perpendicular to the longitudinal direction of the roll sponge 52, and , the cleaning liquid is sprayed in the same direction as the substrate W is rotated. Since the cleaning liquid is supplied in the form of a spray, the force of the cleaning liquid can be suppressed and the load on the substrate W can be reduced.
  • the cleaning liquid from the second cleaning liquid supply unit 62 passes between the roll sponge 52 and the substrate W, the contact area between the substrate W and the roll sponge 52 is cleaned in a portion slightly outside the center of the substrate W.
  • the rotation direction of the substrate W, the rotation direction of the roll sponge 52, and the cleaning liquid supply direction from the cleaning liquid supply section 62 match. As a result, the relative speed between them is reduced, the time during which the cleaning liquid is in contact with the substrate W and the roll sponge 52 is increased, and the cleaning power is improved.
  • the cleaning liquid from the second cleaning liquid supply section 62 penetrates deep into the roll sponge 52 .
  • the direction of supply of the cleaning liquid is perpendicular to the roll sponge 52, and the direction of rotation of the substrate W coincides with the direction of supply of the cleaning liquid.
  • the force causes it to fly outside the substrate W (see arrow F2 in FIG. 3). As a result, it is possible to prevent the cleaning liquid from remaining on the substrate W after being used for cleaning for a long period of time.
  • the supply direction from the first cleaning liquid supply section 61 and the supply direction from the second cleaning liquid supply section 62 match. If the cleaning liquid is supplied in the opposite direction, when the cleaning liquid from the first cleaning liquid supply section 61 collides with the cleaning liquid from the second cleaning liquid supply section 62, convection will occur and the cleaning liquid will be blown up. This is because the cleaning liquid containing dust or the like may land on the substrate W and contaminate the substrate.
  • FIG. 5 shows an example (calculated value) of the relationship between the distance from the surface of the substrate W and the liquid flow velocity (liquid flow velocity).
  • a case of 1 L/min is shown. It can be seen that the liquid flow is very small in the vicinity of the substrate W (region with a small distance from the surface) due to the friction between the substrate W and the liquid and the viscosity of the liquid.
  • FIG. 6 is an explanatory diagram showing the flow of the particles when the particles adhere to the liquid film of the cleaning liquid on the substrate W.
  • FIG. When the particles 70 remain on the upper layer of the liquid film 72, the particles flow out of the substrate W by the rinsing process that accompanies the rotation of the substrate W because the flow of the liquid in the upper layer is fast (the liquid flow velocity is large). easier to remove.
  • the particles when the particles reach the lower layer of the liquid film, the particles are less likely to be removed to the outside of the substrate W because the flow of the liquid in the lower layer is slow (the liquid flow velocity is small).
  • the amount of adhered particles in the spin rinse process depends on the mass transfer coefficient k (a coefficient that determines the amount of movement of particles in the vertical direction on the substrate surface).
  • FIG. 7 is a graph showing the temperature dependence of the mass transfer coefficient k, where (a) is the absolute value (calculated value) of the mass transfer coefficient k, and (b) is based on the mass transfer coefficient k at 20°C. It shows the ratio of mass transfer coefficients at each temperature. Calculation results are shown for a rotational speed of the substrate W of 100 rpm, a radial position r of the substrate W of 100 mm, and a liquid supply amount of 1 L/min. From the graph of FIG. 7, it can be seen that there is a tendency that the higher the temperature of the liquid, the higher the mass transfer coefficient k (that is, the particles of the liquid film tend to reattach to the substrate W).
  • FIG. 8 is a graph showing the ratio of the number of particles remaining on the substrate W after rinsing when the temperature of the cleaning liquid (pure water) supplied in the rinsing process is changed. It can be seen that the number of particles has decreased.
  • the temperature of the cleaning liquid supplied in the rinsing process is preferably 0° C. to 20° C., particularly preferably 0° C. to 15° C., when the rotation speed of the substrate W is 300 rpm or less. . Further, it is preferable to set the liquid temperature of the cleaning liquid in the rinsing process to be lower than the liquid temperature in the scrub cleaning process.
  • FIG. 9 shows an outline of a substrate cleaning apparatus according to the second embodiment, which is similar to the first embodiment described above except that the positional relationship between the first cleaning liquid supply section 61 and the second cleaning liquid supply section 62 is different. Since the form and configuration are the same, detailed description is omitted.
  • the angle of supply of the cleaning liquid (the angle ⁇ 1 between the central axis of the nozzle and the substrate W) by the nozzles constituting the first cleaning liquid supply section 61 composed of pin-type nozzles constitutes the second cleaning liquid supply section 62. It is configured to be smaller than the supply angle ⁇ 2 of the cleaning liquid by the nozzle.
  • FIG. 10 is a graph showing changes in the residual particle number ratio when the arrangement of the first cleaning liquid supply unit 61 is changed.
  • (b) show the residual particle number ratio under each condition.
  • the condition (1) is that the first cleaning liquid supply section 61 is arranged at the same position as in the first embodiment, and is approximately the same height (approximately the same injection angle) as the second cleaning liquid supply section. ), the cleaning liquid is supplied toward the center of the substrate W.
  • FIG. In the figure, the particle drop position indicates the position where the particle liquid was dropped in order to conduct an experiment simulating the discharge of the cleaning liquid falling from the roll sponge.
  • Condition (2) is a case where the angle of supply of the cleaning liquid by the first cleaning liquid supply section 61 composed of a pin-shaped nozzle is made smaller than that of the second cleaning liquid supply section 62 (see FIG. 9), and the first cleaning liquid supply section The cleaning liquid from 61 is easily discharged to the outside of the substrate W without being swept around by the rotation of the substrate W.
  • the cleaning liquid supply angle ⁇ 1 of the first cleaning liquid supply section 61 is set to 15°
  • the cleaning liquid supply angle ⁇ 2 of the second cleaning liquid supply section 62 is set to 30°.
  • Condition (3) sets the angle at which the cleaning liquid is supplied by the first cleaning liquid supply section 61 composed of a pin-shaped nozzle to the same angle as in Condition (2), and the cleaning liquid supplied by the first cleaning liquid supply section 61 is dropped as particle droplets. Feeding to position. Further, in the conditions (1) to (3), the rinse time with the chemical liquid is set to 10 seconds, the rinse time with pure water is set to 10 seconds, and the cleaning liquid is dropped for 5 seconds. Further, conditions such as the rotation speed of the substrate W, the flow rate and temperature of the cleaning liquid, and the radius of the substrate W are the same in conditions (1) to (3).
  • FIG. 10(b) shows the residual particle number ratio under each condition. It can be seen that the removal effect of the particles by the cleaning liquid is enhanced by forcibly discharging the upper particles by the cleaning liquid.
  • the supply angle ⁇ 1 of the cleaning liquid by the first cleaning liquid supply section 61 is preferably in the range of 0° to 30°, and more preferably in the range of 5° to 10°.
  • FIG. 11 shows an example of the film thickness of the cleaning liquid relative to the position in the radial direction of the substrate. The conditions are the same except that the rotation speed of the substrate W is set to 50 rpm and 150 rpm.
  • the vicinity of the center of the substrate W corresponds to the portion to which the cleaning liquid is supplied, and the film thickness is high, and the film thickness of the cleaning liquid is reduced toward the periphery of the substrate W.
  • the lower the rotation speed of the substrate W the smaller the centrifugal force acting on the cleaning liquid, and thus the larger the film thickness of the cleaning liquid.
  • FIG. 12 shows an example of the rinsing process when the conditions of the rotation speed of the substrate W are changed. showing.
  • condition (1) the same rotation speed (150 rpm) is used from the start to the end of rinsing (after 20 seconds), and in condition (2), the speed is low (50 rpm) for 5 seconds from the start of rinsing, and the condition ( The same speed (150 rpm) as in 1) is set.
  • condition (1) and (2) the rinse time with the chemical liquid is set to 10 seconds, the rinse time with pure water after that is set to 10 seconds, and the cleaning liquid is dropped for 5 seconds. Further, conditions such as the flow rate and temperature of the cleaning liquid and the radius of the substrate W are the same in condition (1) and condition (2).
  • FIG. 12(b) shows the residual particle number ratio under each condition.
  • condition (1) the film thickness of the cleaning liquid on the substrate W is increased by lowering the rotation speed of the substrate W. Therefore, the particles do not adhere to the substrate W and easily move to the peripheral portion of the substrate W. After that, by increasing the rotation speed of the substrate W, the particles are easily discharged to the outside of the substrate W due to the centrifugal force. As a result, it can be seen that the effect of removing particles by the cleaning liquid is high.
  • the rotation speed of the substrate W is 50 rpm as the low speed, but it is not limited to this, and is faster than the normal speed (150 rpm in this embodiment, but preferably 100 rpm or more).
  • a low speed is sufficient, for example, 30 rpm to 150 rpm is preferable.
  • the low speed time is not limited to 5 seconds, and can be adjusted in consideration of the throughput of the rinsing process and the flow rate of the cleaning liquid.
  • the rotation speed of the substrate W is changed in two steps, but the present invention is not limited to this, for example, in three steps (50 rpm, 100 rpm, 150 rpm in order), or in four or more steps. The speed may be switched.
  • the liquid adhering to the substrate W may move. This is because the liquid droplets are pulled toward the side where the solid surface energy is large and move. Since the surface of the substrate W is hydrophilic and the solid surface energy is high, the liquid droplets easily move to the surface. there is Therefore, during substrate cleaning, the cleaning liquid may move from the edge portion of the back surface of the substrate toward the edge portion of the front surface of the substrate. Further, the cleaning liquid adhering to the side surface of the substrate after cleaning the substrate may flow into the surface of the substrate W. As shown in FIG. As a result, particles derived from the cleaning liquid may adhere to the surface of the substrate W. As shown in FIG.
  • the side and back surfaces of the substrate W are hydrophilized in the substrate cleaning process or before the substrate cleaning process, thereby preventing the cleaning liquid adhering to the side surfaces and the back surface from reaching the surface of the substrate W.
  • a mixture of sulfuric acid and hydrogen peroxide, a hydrogen fluoride-based chemical, or an alcoholic liquid such as isopropyl alcohol is sprayed on the side and back surfaces, or ozone is applied to the side and back surfaces of the substrate W. Treatment, plasma treatment is preferred.
  • the effect of removing particles by the cleaning liquid is enhanced by adjusting the temperature of the cleaning liquid, the arrangement of the cleaning liquid supply part of the pin-type nozzle, and the rotation speed of the substrate W.
  • a plurality of these methods may be combined to further enhance the particle removal effect of the cleaning liquid.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/JP2022/031289 2021-08-19 2022-08-19 基板洗浄装置、基板洗浄方法及び基板研磨装置 Ceased WO2023022210A1 (ja)

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US18/683,735 US20240351078A1 (en) 2021-08-19 2022-08-19 Substrate cleaning device, substrate cleaning method, and substrate polishing apparatus

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JP2021-134075 2021-08-19
JP2021134075A JP7795884B2 (ja) 2021-08-19 2021-08-19 基板洗浄装置、基板洗浄方法及び基板研磨装置

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