WO2023004839A1 - 封装结构、显示面板及显示面板的制作方法 - Google Patents
封装结构、显示面板及显示面板的制作方法 Download PDFInfo
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- WO2023004839A1 WO2023004839A1 PCT/CN2021/110221 CN2021110221W WO2023004839A1 WO 2023004839 A1 WO2023004839 A1 WO 2023004839A1 CN 2021110221 W CN2021110221 W CN 2021110221W WO 2023004839 A1 WO2023004839 A1 WO 2023004839A1
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 96
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 42
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- 238000005538 encapsulation Methods 0.000 claims description 49
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- the present application relates to the field of display technology, in particular to a packaging structure, a display panel and a method for manufacturing the display panel.
- OLED displays are self-illuminating and do not require a backlight. Moreover, the OLED display has the advantages of high contrast, wide color gamut, thin thickness, fast response speed and can be used for flexible panels. However, since OLED devices are sensitive to water and oxygen, in order to realize the effective application of OLED displays, effective packaging of OLEDs is required. Thin-Film Encapsulation (TFE) is a commonly used effective packaging method.
- TFE Thin-Film Encapsulation
- the inventors of the present application found that in the thin film encapsulation structure, the organic layer is usually prepared by inkjet printing after depositing the inorganic thin film.
- Such a packaging structure requires multiple transfers of the substrate during the manufacturing process.
- the method of inkjet printing is likely to cause overflow of the organic layer, which will affect the encapsulation effect.
- the embodiments of the present application provide a packaging structure, a display panel and a manufacturing method of the display panel, which can improve the packaging effect.
- An embodiment of the present application provides a packaging structure, including an organic structure layer, the material used in the organic structure layer includes an organic structure material, and the structural formula of the organic structure material includes Among them, the R 1 group is The R2 group is One or more of -----O------, n is a positive integer greater than or equal to 1, x is -----H, ----SiH 3 and ---NH One or more of 2 .
- the ratio of the content of the organic structural material to the content of the inorganic material is 0.05 to 0.5.
- the organic structure layer has a thickness of 1 ⁇ m to 5 ⁇ m.
- the encapsulation structure further includes at least one inorganic layer, and the inorganic layer is made of one or more combinations of nitrides, oxides, and oxynitrides.
- the thickness of the inorganic layer is 20 nm to 1500 nm.
- the encapsulation structure includes three layers of the inorganic layer and two layers of the organic structure layer, and the three layers of the inorganic layer and the two layers of the organic structure layer are alternately stacked. .
- the encapsulation structure includes three layers of the inorganic layer, one organic structure layer and one organic layer, the inorganic layer, the organic structure layer, the inorganic layer, the organic layer and the inorganic layer are stacked in sequence, and the organic layer is made of ultraviolet photosensitive polymer, epoxy polymer or acrylic polymer.
- the embodiment of the present application also provides a display panel, including:
- the light emitting device layer is disposed on the array substrate;
- An encapsulation structure the encapsulation structure is arranged on the side of the light-emitting device layer away from the array substrate, the encapsulation structure includes an organic structure layer, the material used in the organic structure layer includes an organic structure material, and the organic structure material
- the structural formula includes Among them, the R 1 group is The R2 group is One or more of -----O------, n is a positive integer greater than or equal to 1, x is -----H, ----SiH 3 and ---NH One or more of 2 .
- the material used in the organic structure layer also includes inorganic materials, and the inorganic materials are one or more combinations of silicon nitride, silicon oxide, and silicon oxynitride,
- the inorganic materials are one or more combinations of silicon nitride, silicon oxide, and silicon oxynitride,
- a ratio of the content of the organic structure material to the content of the inorganic material is 0.01 to 0.75.
- the organic structure layer has a thickness of 1 ⁇ m to 5 ⁇ m.
- the encapsulation structure further includes at least one inorganic layer, and the inorganic layer is made of one or more combinations of nitrides, oxides, and oxynitrides.
- the thickness of the inorganic layer is 20 nm to 1500 nm.
- the encapsulation structure includes two inorganic layers, and the organic structure layer is disposed between the two inorganic layers.
- the encapsulation structure includes three layers of the inorganic layer and two layers of the organic structure layer, and the three layers of the inorganic layer and the two layers of the organic structure layer are alternately stacked. .
- the encapsulation structure includes three layers of the inorganic layer, one organic structure layer and one organic layer, the inorganic layer, the organic structure layer, the inorganic layer, the organic layer and the inorganic layer are stacked in sequence, and the organic layer is made of ultraviolet photosensitive polymer, epoxy polymer or acrylic polymer.
- the embodiment of the present application also provides a method for manufacturing a display panel, including:
- reaction gas is silane gas and nitrous oxide gas, or the reaction gas is silane gas and ammonia gas;
- the reactive plasma undergoes a chemical reaction and is deposited on the light-emitting device layer to form an organic structure layer; wherein, the material used in the organic structure layer includes an organic structure material, and the structural formula of the organic structure material includes Among them, the R 1 group is The R2 group is One or more of -----O------, n is a positive integer greater than or equal to 1, x is -----H, ----SiH 3 and ---NH One or more of 2 .
- Embodiments of the present application provide a packaging structure, a display panel, and a manufacturing method of the display panel.
- the encapsulation structure includes an organic structure layer.
- An organic structural material is included in the organic structural layer.
- Organic structural materials are inorganic materials with chain-like chemical bonds. Due to the chain chemical bonds, inorganic materials have the relevant characteristics of organic materials. For example, organic structured materials have lower stress and stronger step coverage.
- a material with organic characteristics is obtained by using an inorganic material manufacturing method, thereby obtaining an organic structure material with the water and oxygen barrier effect of the inorganic material and the cushioning property of the organic material. Therefore, the packaging structure of the present application can achieve a better packaging effect and improve the packaging reliability of the display panel.
- Fig. 2 is a second structural schematic diagram of the packaging structure provided by the embodiment of the present application.
- FIG. 3 is a schematic diagram of the third structure of the package structure provided by the embodiment of the present application.
- Figure 4 is a schematic diagram of the fourth structure of the packaging structure provided by the embodiment of the present application.
- Fig. 5 is a first structural schematic diagram of a display panel provided by an embodiment of the present application.
- FIG. 6 is a second structural schematic diagram of a display panel provided by an embodiment of the present application.
- FIG. 7 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present application.
- Embodiments of the present application provide a packaging structure, a display panel, and a manufacturing method of the display panel. Each will be described in detail below. It should be noted that the description order of the following embodiments is not as a limitation to the preferred order of the embodiments.
- FIG. 1 is a schematic structural diagram of a first package structure provided by an embodiment of the present application.
- the present application provides a packaging structure 10 .
- the package structure 10 includes an organic structure layer 101 .
- the material used in the organic structure layer 101 includes an organic structure material, and the structural formula of the organic structure material includes Among them, the R 1 group is The R2 group is One or more of -----O------, n is a positive integer greater than or equal to 1, x is -----H, ----SiH 3 and ---NH One or more of 2 .
- the encapsulation structure 10 provided in the present application includes an organic structure layer 101 .
- the organic structure layer 101 includes an organic structure material.
- Organic structural materials are inorganic materials with chain-like chemical bonds. Due to the chain chemical bonds, inorganic materials have the relevant characteristics of organic materials. For example, organic structural materials have lower stress and stronger step-coverage.
- a material with organic properties is obtained by using an inorganic material manufacturing method.
- the organic structure layer 101 not only has the cushioning properties of the organic encapsulation material, but also has the water and oxygen barrier effect of the inorganic encapsulation material. Therefore, the packaging structure 10 of the present application can achieve a better packaging effect and improve the packaging reliability of the display panel.
- the step coverage refers to the percentage of the ratio of the thickness of the film layer across the step to the film thickness at the flat place. The stronger the step coverage of the material, the better the encapsulation effect of the material.
- the thickness of the organic structure layer 101 is 1 ⁇ m to 5 ⁇ m. Specifically, the thickness of the organic structure layer 101 may be 1 ⁇ m, 1.5 ⁇ m, 2 ⁇ m, 2.5 ⁇ m, 3 ⁇ m, 3.5 ⁇ m, 4 ⁇ m, 4.5 ⁇ m or 5 ⁇ m. The above numerical values are merely examples, and the thickness of the organic structure layer 101 may also be other values in the range of 1 ⁇ m to 5 ⁇ m. The thickness of the organic structure layer 101 can be set according to packaging requirements.
- the R 1 group is The R2 group is And/or -----O------, n is a positive integer greater than or equal to 1, x is one of -----H, ----SiH 3 and ---NH 2 or more. That is, x in the R 1 group and the R 2 group can be arbitrarily selected from -----H, ---SiH 3 and ---NH 2 any one.
- the R group can also be -----O----.
- the R 1 group and the R 2 group in the organic structural material may be selected from two, three or four of the above groups.
- the organic structural material includes the structure --SiH 2 -NH-SiH 2 -NH-SiH 2 -...NH-SiH 2 -NH--.
- the R 1 group in the organic structural material is --Si--, --SiH 2 --, and the R 2 group is --NH--
- the organic structural material can include the structure --Si-NH -SiH 2 -NH- whil-Si-NH--, wherein, the other two bonds of --Si-- are connected to -----H, ----SiH 3 and ---NH 2
- One or more, here is a chain that embodies the chemical bond, other groups are not fully shown.
- the chain structure included in the above organic structure material is only an example. In fact, the organic structure material described in this application only needs to use inorganic materials to form a chain structure, and the specific arrangement is not limited.
- the materials used in the organic structure layer also include inorganic materials, and the inorganic materials are one or more combinations of silicon nitride, silicon oxide and silicon oxynitride.
- the organic structure layer is formed by plasma enhanced chemical vapor deposition. Specifically, silane, ammonia and water are introduced as reaction gases, and then the reaction gases are ionized by means of microwave or radio frequency to form plasma locally. Plasma is chemically active and reacts easily to form organic structural layers. Therefore, when the reaction gas is fed, microwave or radio frequency partially ionizes a part of the reaction gas into -----SiH 2 --, -----SiH 3 , -----NH 2 and -----O-----.
- reaction gas is completely ionized into Some of the above-mentioned groups form an organic structural material having chain chemical bonds. A portion of the fully ionized groups form inorganic materials such as silicon nitride, silicon oxide, and silicon oxynitride.
- the organic structural material may also form a cross-linked structure with the surrounding organic structural material.
- the specific organic structure material and inorganic material formed are related to the reactant gas introduced.
- the formed inorganic material is silicon nitride
- the formed organic structural material R group is One or more of -----SiH 2 -- and -----SiH 3
- the R 2 group is one or more of.
- the formation of the inorganic materials as silicon oxide and silicon oxynitride and the corresponding organic structural materials is similar to the above example, and will not be repeated here.
- the ratio of the content of the organic structure material to the content of the inorganic material is 0.01 to 0.75. Further, the ratio of the content of the organic structural material to the content of the inorganic material may be 0.05 to 0.5.
- organic structural materials and inorganic materials are formed by ionizing different plasma groups through microwave or radio frequency, and then undergoing chemical reactions. In the case of different gas flows, the types and quantities of plasma radicals generated by ionization are also different.
- the ratio of organic structural material to inorganic material is 0.01 to 0.75. That is, in the organic structure layer, the content of the organic structure material is 1% to 75% of the content of the inorganic material.
- the ratio of the content of the organic structural material to the content of the inorganic material is 0.01, 0.02, 0.03, 0.04, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7 or 0.75.
- the above values are only examples, and the ratio of the organic structural material to the inorganic material may also be other values between 0.01 and 0.75. Only when the ratio of the content of the organic structural material to the content of the inorganic material is between 0.01 and 0.75, can the organic structural layer have the properties of organic materials and excellent encapsulation properties.
- the encapsulation structure 10 may be provided with only one organic structure layer 101 for encapsulation.
- a layer of organic structure layer 101 used as the encapsulation structure 10 can reduce the thickness of the encapsulation structure 10 .
- the organic structure layer 101 is used in flexible display panel packaging, it can ensure the bendability of the panel.
- the thickness of the packaging structure 10 at the bend of the flexible display panel is small, which can effectively reduce the bending radius, narrow the frame, and prevent the film from cracking at the bend.
- the package structure 10 may further include at least one inorganic layer 102 .
- the material used for the inorganic layer 102 is one or more combinations of nitrides, oxides and oxynitrides.
- the nitride may be silicon nitride.
- the oxide may be aluminum oxide, silicon oxide, titanium oxide, zirconium oxide or zinc oxide.
- the oxynitride may be silicon oxynitride.
- the inorganic layer 102 is provided in the packaging structure 10, and the packaging is performed by combining inorganic materials and materials with organic properties, so that a better packaging effect can be obtained.
- the inorganic layer 102 is used to block water and oxygen, and utilizes the organic properties of the organic structure layer 101 to extend the water vapor intrusion path by using the organic structure layer 101 as an organic layer. At the same time, the organic structure layer 101 has good step coverage, and can well cover the film layers that need to be encapsulated. Combining the organic structure layer 101 and the inorganic layer 102 can improve the water and oxygen barrier capability of the encapsulation structure 10 , thereby increasing the lifespan of the display panel.
- the thickness of the inorganic layer 102 is 20 nm to 1500 nm.
- the thickness of the inorganic layer 102 may be 20nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm or 1500nm.
- the thickness of the inorganic layer 102 can be adaptively set according to packaging requirements. For example, when the organic structure layer 101 needs to be set relatively thin, the thickness of the inorganic layer 102 can be appropriately increased to ensure the encapsulation effect of the encapsulation structure.
- the package structure 10 includes two inorganic layers 102 .
- the organic structure layer 101 is disposed between two inorganic layers 102 . Disposing the organic structure layer 101 between the two inorganic layers 102 can make the inorganic layer 102 act like a barrier. After the organic structure layer 101 absorbs water and oxygen, the inorganic layer 102 can block water and oxygen in the organic structure layer 101 to form a barrier space that traps water and oxygen, thereby preventing water and oxygen from diffusing and intruding.
- Such an encapsulation structure 10 further improves the water and oxygen barrier performance and encapsulation reliability.
- FIG. 2 is a second structural schematic diagram of the packaging structure provided by the embodiment of the present application.
- the package structure 10 shown in FIG. 2 includes an inorganic layer 102 .
- the organic structure layer 101 can be disposed on any side of the inorganic layer 102 .
- the combination of the organic structure layer 101 and the inorganic layer 102 for encapsulation can enhance the water and oxygen barrier properties of the encapsulation structure 10 .
- FIG. 3 is a schematic structural diagram of a third package structure provided by an embodiment of the present application.
- the encapsulation structure 10 includes three inorganic layers 102 and two organic structure layers 101 . Three inorganic layers 102 and two organic structure layers 101 are alternately stacked.
- the film density of the organic structure layer 101 and the inorganic layer 102 is not particularly high, alternately setting the multilayer organic structure layer 101 and the inorganic layer 102 for encapsulation can improve the density of the encapsulation structure 10 and better prevent water and oxygen intrusion.
- setting two organic structure layers 101 can increase the way of water and oxygen intrusion.
- the inorganic layer 102 can trap water and oxygen in the organic structure layer 101 . Therefore, providing an alternate stacking structure of five layers of organic structure layers 101 and inorganic layers 102 can further improve the encapsulation effect.
- FIG. 4 is a schematic diagram of a fourth structure of the package structure provided by the embodiment of the present application.
- the encapsulation structure 10 includes three inorganic layers 102 , an organic structure layer 101 and an organic layer 103 .
- the inorganic layer 102 , the organic structure layer 101 , the inorganic layer 102 , the organic layer 103 and the inorganic layer 102 are sequentially stacked.
- the material used for the organic layer 103 is ultraviolet photosensitive polymer, epoxy polymer or acrylic polymer.
- the material used for the organic layer 103 can be epoxy resin, polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), polyethylene (PE), polyethylene Organic materials such as acrylate (PEA), polymethyl methacrylate (PMMA), etc.
- the organic layer 103 is made of organic materials. Combining the organic structure layer 101 and the organic layer 103 in the encapsulation structure 10 can better extend the water vapor intrusion path and effectively block water and oxygen. In addition, the surface of the organic layer 103 is smoother, the quality of the interface between the inorganic layer 102 and the organic layer 103 is improved, and the film layers can be effectively prevented from falling off.
- FIG. 5 is a schematic diagram of a first structure of a display panel provided by an embodiment of the present application.
- the display panel 100 includes an array substrate 20 , a light emitting device layer 30 and a packaging structure 10 .
- the light emitting device layer 30 is disposed on the array substrate 20 .
- the encapsulation structure 10 is disposed on a side of the light emitting device layer 30 away from the array substrate 20 .
- the package structure 10 is the package structure 10 described above.
- FIG. 6 is a second structural schematic diagram of a display panel provided by an embodiment of the present application.
- the array substrate 20 includes a substrate 201 and a thin film transistor layer 202 .
- the encapsulation structure 10 includes the laminated structure of the inorganic layer 102 , the organic structure layer 101 and the inorganic layer 102 as an example for illustration.
- the thickness and shape of each film layer in FIG. 5 are for illustration only, and are not intended to limit the structure of the display panel 100 .
- the substrate 201 may be glass, functional glass (sensor glass) or a flexible substrate.
- the specific film layers and assembly of the thin film transistor layer 202 are commonly used technical means in the field, and will not be repeated here.
- the organic structure layer 101 includes organic structure materials.
- Organic structural materials are inorganic materials with chain-like chemical bonds. Due to the chain chemical bonds, inorganic materials have the relevant characteristics of organic materials. For example, organic structured materials have lower stress and stronger step coverage.
- a material with organic properties is obtained by using an inorganic material manufacturing method.
- the organic structure layer 101 enhances the water and oxygen barrier effect of the organic packaging material. Therefore, the packaging structure 10 of the present application can enable the display panel 100 to achieve a better packaging effect and improve the packaging reliability of the display panel 100 .
- the packaging structure 10 provided in the present application is not only applied to the packaging of the display panel 100 , but also can be applied to related aspects of step coverage of other electronic components.
- it is used in electronic components with an undercut structure to cover related aspects such as steps generated by the undercut structure.
- FIG. 7 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present application.
- the manufacturing method of the display panel specifically includes the following steps:
- Step 11 providing an array substrate.
- the array substrate may include a substrate and a thin film transistor layer disposed on the substrate.
- the substrate can be glass, functional glass or flexible substrate.
- functional glass is obtained by sputtering transparent metal oxide conductive thin film coating on ultra-thin glass and undergoing high-temperature annealing treatment.
- Step 12 setting a light emitting device layer on the array substrate.
- Step 13 transferring the array substrate provided with the light-emitting device layer into the cavity, and introducing a reaction gas into the cavity.
- the reaction gas is silane gas (SiH 4 ) and nitrous oxide gas (N 2 O), or the reaction gas is silane gas and ammonia gas (NH 3 ). Since organic structural materials need to be reacted, the flow rate of the reaction gas introduced is increased to partially ionize the reaction gas. Specifically, compared with the gas flow rate for producing ordinary inorganic silicon nitride materials, silicon oxide materials, and silicon oxynitride materials, when used to generate organic structural materials, the gas flow rate is increased by 3 to 7 times. Increasing the flow rate of the reaction gas can partially ionize the reaction gas on the one hand, and increase the film forming speed on the other hand.
- Step 14 ionizing the reaction gas to form a reaction plasma.
- the ionized reaction gas can be ionized by microwave or radio frequency.
- the air pressure in the cavity and the power of radio frequency are adjusted, and the reaction gas is ionized by means of radio frequency.
- the air pressure may be 800 mTorr (mTorr) to 2000 mTorr.
- the radio frequency power may be 1 kilowatt (KW) to 2 kilowatts.
- Step 15 the reactive plasma undergoes a chemical reaction and is deposited on the light emitting device layer to form an organic structure layer.
- the materials used in the organic structure layer include organic structure materials, and the organic structure materials include Among them, the R 1 group is The R2 group is One or more of -----O------, n is a positive integer greater than or equal to 1, x is -----H, ----SiH 3 and ---NH One or more of 2 .
- the method of plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) is used to fabricate the organic structure layer, the preparation temperature is low, it will not affect the light emitting device layer, and the luminous efficiency of the light emitting device layer is guaranteed.
- a material with organic properties is formed by the method of making inorganic matter, an organic structural layer can be used instead of a film layer formed by an organic material for encapsulation.
- the PECVD method has a fast deposition rate and good film quality, and the formed packaging structure has fewer micropores and is not easy to crack, which can ensure a better packaging effect.
- the inorganic layer can be arranged on the side of the organic structure layer close to the light-emitting device layer, and the inorganic layer can also be arranged on the side of the organic structure layer away from the light-emitting device layer.
- the inorganic layer may be provided on both sides of the organic structure layer at the same time.
- the inorganic layer may be provided in one layer or in multiple layers.
- the inorganic layer is set on the side of the organic structure layer close to the light-emitting device layer for illustration.
- chemical vapor deposition Chemical Vapor Deposition, CVD
- atomic layer deposition Atomic layer deposition (ALD)
- plasma enhanced chemical vapor deposition method to set the inorganic layer.
- silicon nitride silicon nitride
- the array substrate provided with the light-emitting device layer is transferred into the chamber, and silane gas and ammonia gas are introduced. After the two gaseous raw materials are passed through, a chemical reaction occurs between them to form silicon nitride, which is deposited on the light-emitting device layer.
- An inorganic layer is formed.
- the inorganic layer manufactured by the PECVD method has a fast preparation speed, and the film layer of the inorganic layer is dense and has good adhesion.
- the PECVD method is used to continue fabricating the organic structure layer in the same cavity. In this way, there is no need to transfer after the inorganic layer is produced, avoiding damage to the film layer during the transfer process, and speeding up the production speed.
- PECVD method can be used to fabricate another inorganic layer on one side in the same cavity, so as to form a laminated packaging structure of inorganic barrier, organic buffer and inorganic barrier.
- the organic structure layer can be made by continuing to pass in silane gas and ammonia gas. Increase the gas flow rate to 3 to 7 times that of the inorganic layer before ionization. In this way, the gas in the chamber is uniform, and no other impurities will be produced, and the prepared packaging structure film layer has high purity and fewer defects, which is more conducive to improving the packaging effect. Similarly, after the organic structure layer is fabricated, the gas flow rate can be reduced, and then the silicon nitride inorganic layer can be fabricated.
- silane gas and ammonia gas as an example, and the production of other corresponding materials can refer to this example. It can be understood that the gases introduced during the fabrication of the inorganic layer and the organic structure layer may not be exactly the same.
- the organic layer can be arranged on the side of the inorganic layer close to the light-emitting device layer, and the organic layer can also be arranged between the organic structure layer and the inorganic layer.
- an organic layer may be disposed between two inorganic layers.
- the organic layer may be one layer or multiple layers. The present application does not limit the positions of the organic structure layer, the inorganic layer, and the organic layer.
- the organic layer is fabricated by inkjet printing or vapor deposition.
- the method of vapor deposition is simple, and the film has high purity and compactness.
- the inkjet printing method can precisely control the film-forming area, save materials, reduce costs, and improve product yield.
- the inorganic layer is manufactured by the CVD method
- the organic structure layer is manufactured by the PECVD method.
- Inorganic layers and organic structural layers with properties of organic materials can be fabricated in the same cavity.
- the manufacturing method of the display panel can reduce the transfer of the base material during the encapsulation process, avoid damage to the encapsulation structure or the base material during the transfer process, and increase the product yield of the display panel.
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Abstract
Description
Claims (20)
- 根据权利要求1所述的封装结构,其中,所述有机结构层采用的材料还包括无机材料,所述无机材料为氮化硅、氧化硅和氮氧化硅中的一种或多种组合,在所述有机结构层中,所述有机结构材料的含量与所述无机材料含量的比值为0.01至0.75。
- 根据权利要求2所述的封装结构,其中,所述有机结构材料的含量与所述无机材料含量的比值为0.05至0.5。
- 根据权利要求1所述的封装结构,其中,所述有机结构层的厚度为1μm至5μm。
- 根据权利要求1所述的封装结构,其中,所述封装结构还包括至少一无机层,所述无机层采用的材料为氮化物、氧化物和氮氧化物中的一种或多种组合。
- 根据权利要求5所述的封装结构,其中,所述无机层的厚度为20nm至1500nm。
- 根据权利要求5所述的封装结构,其中,所述封装结构包括两层所述无机层,所述有机结构层设置在两层所述无机层之间。
- 根据权利要求5所述的封装结构,其中,所述封装结构包括三层所述无机层以及两层所述有机结构层,三层所述无机层与两层所述有机结构层交替层叠设置。
- 根据权利要求5所述的封装结构,其中,所述封装结构包括三层所述无机层、一所述有机结构层以及一有机层,所述无机层、所述有机结构层、所述无机层、所述有机层以及所述无机层依次层叠设置,所述有机层采用的材料为紫外光敏聚合物、环氧系聚合物或亚克力系聚合物。
- 根据权利要求10所述的显示面板,其中,所述有机结构层采用的材料还包括无机材料,所述无机材料为氮化硅、氧化硅和氮氧化硅中的一种或多种组合,在所述有机结构层中,所述有机结构材料的含量与所述无机材料含量的比值为0.01至0.75。
- 根据权利要求10所述的显示面板,其中,所述有机结构层的厚度为1μm至5μm。
- 根据权利要求10所述的显示面板,其中,所述封装结构还包括至少一无机层,所述无机层采用的材料为氮化物、氧化物和氮氧化物中的一种或多种组合。
- 根据权利要求13所述的显示面板,其中,所述无机层的厚度为20nm至1500nm。
- 根据权利要求13所述的显示面板,其中,所述封装结构包括两层所述无机层,所述有机结构层设置在两层所述无机层之间。
- 根据权利要求13所述的显示面板,其中,所述封装结构包括三层所述无机层以及两层所述有机结构层,三层所述无机层与两层所述有机结构层交替层叠设置。
- 根据权利要求13所述的显示面板,其中,所述封装结构包括三层所述无机层、一所述有机结构层以及一有机层,所述无机层、所述有机结构层、所述无机层、所述有机层以及所述无机层依次层叠设置,所述有机层采用的材料为紫外光敏聚合物、环氧系聚合物或亚克力系聚合物。
- 根据权利要求18所述的显示面板的制作方法,其中,所述在所述阵列基板上设置发光器件层之后,还包括在所述发光器件层远离所述阵列基板的一侧沉积无机层。
- 根据权利要求19所述的显示面板的制作方法,其中,所述在所述阵列基板上设置发光器件层之后,还包括在所述无机层远离所述阵列基板的一侧沉积有机层。
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KR1020217029572A KR20230018290A (ko) | 2021-07-27 | 2021-08-03 | 밀봉포장 구조체, 디스플레이 패널 및 디스플레이 패널의 제조 방법 |
EP21819016.3A EP4380337A1 (en) | 2021-07-27 | 2021-08-03 | Packaging structure, display panel, and method for manufacturing display panel |
JP2021547103A JP7499776B2 (ja) | 2021-07-27 | 2021-08-03 | 封止構造、表示パネル及び表示パネルの製造方法 |
US17/598,849 US20240065075A1 (en) | 2021-07-27 | 2021-08-03 | Package structure, display panel, and manufacturing method of display panel |
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CN114566091B (zh) * | 2022-02-28 | 2023-12-29 | 京东方科技集团股份有限公司 | 显示模组及其制备方法、显示装置 |
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CN107768534A (zh) * | 2016-08-19 | 2018-03-06 | 上海和辉光电有限公司 | 一种柔性oled的薄膜封装结构及其制备方法 |
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- 2021-08-03 KR KR1020217029572A patent/KR20230018290A/ko not_active Application Discontinuation
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- 2021-08-03 EP EP21819016.3A patent/EP4380337A1/en active Pending
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CN113629210A (zh) | 2021-11-09 |
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EP4380337A1 (en) | 2024-06-05 |
JP7499776B2 (ja) | 2024-06-14 |
CN113629210B (zh) | 2024-06-11 |
US20240065075A1 (en) | 2024-02-22 |
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