WO2022267756A1 - 3d滤波电路与3d滤波器 - Google Patents
3d滤波电路与3d滤波器 Download PDFInfo
- Publication number
- WO2022267756A1 WO2022267756A1 PCT/CN2022/093484 CN2022093484W WO2022267756A1 WO 2022267756 A1 WO2022267756 A1 WO 2022267756A1 CN 2022093484 W CN2022093484 W CN 2022093484W WO 2022267756 A1 WO2022267756 A1 WO 2022267756A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- conductive
- filter circuit
- conductive layers
- multilayer structure
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 13
- 238000009413 insulation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0153—Electrical filters; Controlling thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0014—Capacitor filters, i.e. capacitors whose parasitic inductance is of relevance to consider it as filter
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
Definitions
- Embodiments of the present application provide a 3D filter circuit and a 3D filter, so as to meet design requirements for miniaturization and high performance of the filter circuit.
- the multilayer structure includes at least two conductive layers and at least one organic medium layer, and each organic medium layer is arranged between different conductive layers; the multilayer structure is configured to form at least one capacitor.
- an embodiment of the present application further provides a 3D filter, including the 3D filter circuit provided in any embodiment of the first aspect.
- FIG. 1 is a schematic structural diagram of a 3D filter circuit provided in an embodiment of the present application.
- FIG. 2 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application.
- FIG. 3 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application.
- FIG. 4 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application.
- Multilayer structure 110. Conductive layer; 111. First patterned structure; 112. Second patterned structure; 113. Third patterned structure; 120. Organic medium layer;
- Encapsulation layer 210. Insulation medium layer; 220. Conductive structure.
- the organic medium layer 120 used in the multilayer structure 100 has a wide variety of materials, strong selectivity, and low cost.
- the organic dielectric layer 120 has a variety of composition structures and wide adjustment space performance, which can well adjust the performance of the capacitor C, so that the capacitor C can meet the high performance requirement.
- the 3D filter circuit is composed of at least one multi-layer structure 100, which can increase the integration of the capacitor C, thereby realizing the miniaturization and high-performance design requirements of the filter circuit.
- FIG. 2 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application.
- the multilayer structure 100 is a three-dimensional structure composed of three conductive layers 110 and two organic medium layers 120 , wherein an organic medium layer 120 is arranged between every two conductive layers 110 .
- the multi-layer structure 100 of this solution can form three capacitors C.
- FIG. 1 exemplarily shows a multilayer structure 100 comprising two conductive layers 110 and an organic medium layer 120 to form a capacitor C
- FIG. 2 exemplarily shows a multilayer structure 100 Including three layers of conductive layers 110 and two layers of organic medium layers 120 to form a situation with three capacitors C
- the multilayer structure 100 includes conductive layers 110 and a conductive medium layer disposed between each layer of conductive layers 110 The number can be set according to actual needs, and the number of capacitors C formed in the multilayer structure 100 can be set according to actual needs.
- At least two conductive layers 110 include a plurality of first patterned structures 111, and vertical projections of the first patterned structures 111 in different conductive layers 110 on the organic medium layer 120 Overlapping, overlapping portions of vertical projections of the first patterned structures 111 in different conductive layers 110 on the organic medium layer 120 are set to form a plurality of capacitors C.
- one layer of conductive layer 110 in FIG. 1 includes a first patterned structure 111, wherein the first patterned structure 111 is: at least two layers of conductive layer 110 and at least one layer of organic medium layer 120 vertical projection overlap The conductive layer 110. If at least two conductive layers 110 include a plurality of first patterned structures 111, the overlapping portions of vertical projections of the plurality of first patterned structures 111 in different conductive layers 110 on the organic medium layer 120 can form a plurality of capacitors C .
- a plurality of capacitors C can be centrally arranged in the multi-layer structure 100, which not only meets the requirement of the 3D filter circuit for the capacitor C to ensure high performance of the 3D filter circuit, but also realizes the miniaturization of the 3D filter circuit.
- At least two conductive layers 110 are further configured to form at least one of the planar inductor L1 and the 3D inductor L2 .
- the conductive layer 110 in the multilayer structure 100 can form an inductor.
- types of inductors include planar inductors L1 and 3D inductors L2.
- the planar inductor L1 is composed of a single conductive layer 110
- the 3D inductor L2 is composed of at least two conductive layers 110 electrically connected.
- at least two conductive layers 110 in the multilayer structure 100 can centrally set at least one of the planar inductance L1 and the 3D inductance L2, which not only meets the demand for inductance of the 3D filter circuit to ensure the high performance design requirements of the 3D filter circuit , also realized the miniaturization of the 3D filter circuit.
- the multilayer structure 100 includes a 3D inductor L2, the organic medium layer 120 is provided with a first through hole T1, and the first through hole T1 is filled with a conductive material; each conductive layer 110 It includes at least one second patterned structure 112 , the second patterned structures 112 in different conductive layers 110 are connected through the first through hole T1 , and is configured to form at least one 3D inductor L2 .
- the multilayer structure 100 includes at least two conductive layers 110 and at least one organic medium layer 120, and the organic medium layer 120 is disposed between the at least two conductive medium layers.
- the multilayer structure 100 includes a 3D inductor L2, and at least two conductive layers 110 included in the multilayer structure 100 need to be electrically connected.
- a first through hole T1 can be provided on the organic medium layer 120, and a conductive material can be filled in the first through hole T1, so that the conductive layers 110 of different layers can be electrically connected through the first through hole T1, thereby forming a 3D Inductor L2.
- each conductive layer 110 included in the multilayer structure 100 includes at least one second patterned structure 112. If the second patterned structures 112 in different conductive layers 110 are connected through the first through hole T1, at least one 3D inductor can be formed. L2. To sum up, at least two conductive layers 110 in the multilayer structure 100 can be provided with at least one 3D inductor L2 collectively, which improves the compactness of the inductor arrangement and realizes the miniaturization of the 3D filter circuit.
- the material of the organic medium layer includes at least one of epoxy resin, PPE resin and PI resin.
- the material of the conductive layer includes copper foil or electroplated copper.
- copper foil or electroplated copper can be attached to various substrates, such as metals, insulating materials, etc., and has a wide temperature range. Place the conductive copper foil on the substrate surface, combined with the metal substrate, it has excellent conductivity, and provides the effect of electromagnetic shielding; the copper ions in the electrolyte are plated on the surface of the substrate, and a thinner, finer and smoother surface can be obtained. Copper plating with good electrical conductivity.
- the material of the conductive layer is copper foil or electroplated copper, which can not only ensure the lightness and thinness of the conductive layer, thereby reducing the volume of the conductive layer, but also ensure that the conductive layer has good conductivity.
- FIG. 3 is a schematic structural diagram of another 3D filter circuit provided by an embodiment of the present application. As shown in FIG. 3 , the 3D filter circuit further includes an encapsulation layer 200 ; the encapsulation layer 200 is configured to encapsulate the multilayer structure 100 .
- the encapsulation layer 200 is wrapped outside the multilayer structure 100, and the multilayer structure 100 is encapsulated in the encapsulation layer 200, which can protect the multilayer structure 100 and prevent the multilayer structure 100 from being affected by various adverse factors of the external environment.
- the working stability of the multilayer structure 100 is ensured, and the service life of the multilayer structure 100 is prolonged.
- the encapsulation layer 200 includes an insulating dielectric layer 210 and a conductive structure 220; the insulating dielectric layer 210 wraps the multilayer structure 100; the insulating dielectric layer 210 is provided with a second through hole T2, and the second through hole T2
- the conductive material is filled inside to form a conductive structure 220 , and at least two conductive layers 110 are connected to an external circuit through the second through hole T2 .
- the at least two conductive layers 110 further include at least one third patterned structure 113 , and the third patterned structure 113 is connected to the conductive structure 220 .
- the third patterned structure 113 can be used as the conductive layer 110 to form a part of the planar inductor L1 or The part in the conductive layer 110 is used to connect the capacitance C and the inductance in the multilayer structure 100 .
- At least two layers of conductive layers 110 include at least one third patterned structure 113, that is, at least two layers of conductive layers 110 can form at least one planar inductor L1 or include at least one conductive layer for connecting the capacitance C and the inductor in the multilayer structure 100. part.
- FIG. 1 , FIG. 2 and FIG. 3 are only exemplary schematic diagrams showing the structure of a 3D filter circuit including a multi-layer structure 100, and in other embodiments, the number of multi-layer structures 100 included in the 3D filter circuit may vary. Set according to actual needs.
- the 3D filter includes the 3D filter circuit provided by any embodiment of the present application, and thus has the beneficial effects of the 3D filter circuit provided by the embodiment of the present application, and details are not repeated here.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Coils Or Transformers For Communication (AREA)
- Filters And Equalizers (AREA)
Abstract
Description
Claims (10)
- 一种3D滤波电路,包括多层结构;所述多层结构包括至少两层导电层和至少一层有机介质层,每层所述有机介质层设置于不同的所述导电层之间;所述多层结构被设置为形成至少一个电容。
- 根据权利要求1所述的3D滤波电路,其中,至少两层所述导电层包括多个第一图案化结构,不同的所述导电层中的第一图案化结构在所述有机介质层上的垂直投影交叠,不同的所述导电层中的第一图案化结构在所述有机介质层上的垂直投影交叠部位被设置为形成多个电容。
- 根据权利要求1所述的3D滤波电路,其中,至少两层所述导电层还被设置为形成平面电感和3D电感中的至少一个。
- 根据权利要求3所述的3D滤波电路,其中,所述多层结构包括所述3D电感,所述有机介质层上设置有第一通孔,所述第一通孔内填充有导电材料;每一层所述导电层包括至少一个第二图案化结构,不同的所述导电层中的第二图案化结构通过所述第一通孔连接,被设置为形成至少一个所述3D电感。
- 根据权利要求1所述的3D滤波电路,其中,所述有机介质层的材料包括环氧树脂、PPE树脂和PI树脂中至少之一。
- 根据权利要求1所述的3D滤波电路,其中,所述导电层的材料包括铜箔或电镀铜。
- 根据权利要求1所述的3D滤波电路,还包括封装层;所述封装层被设置为封装所述多层结构。
- 根据权利要求7所述的3D滤波电路,其中,所述封装层包括绝缘介质层和导电结构;所述绝缘介质层包裹所述多层结构;所述绝缘介质层上设置有第二通孔,所述第二通孔内填充有导电材料被设置为形成所述导电结构,至少两层所述导电层通过所述第二通孔与外部电路连接。
- 根据权利要求8所述的3D滤波电路,其中,至少两层所述导电层还包括至少一个第三图案化结构,所述第三图案化结构与所述导电结构连接。
- 一种3D滤波器,包括权利要求1-9任一项所述的3D滤波电路。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020237009729A KR20230054861A (ko) | 2021-06-21 | 2022-05-18 | 3d 필터회로 및 3d 필터 |
US18/044,982 US20230370039A1 (en) | 2021-06-21 | 2022-05-18 | 3d filter circuit and 3d filter |
JP2023515089A JP7569519B2 (ja) | 2021-06-21 | 2022-05-18 | 3dフィルタ回路及び3dフィルタ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN202110685700.9 | 2021-06-21 | ||
CN202110685700.9A CN113381715B (zh) | 2021-06-21 | 2021-06-21 | 3d滤波电路与3d滤波器 |
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WO2022267756A1 true WO2022267756A1 (zh) | 2022-12-29 |
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PCT/CN2022/093484 WO2022267756A1 (zh) | 2021-06-21 | 2022-05-18 | 3d滤波电路与3d滤波器 |
Country Status (5)
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US (1) | US20230370039A1 (zh) |
JP (1) | JP7569519B2 (zh) |
KR (1) | KR20230054861A (zh) |
CN (1) | CN113381715B (zh) |
WO (1) | WO2022267756A1 (zh) |
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CN113381715B (zh) * | 2021-06-21 | 2024-06-28 | 安徽安努奇科技有限公司 | 3d滤波电路与3d滤波器 |
Citations (5)
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CN108766960A (zh) * | 2018-05-28 | 2018-11-06 | 哈尔滨工业大学 | 一种多用途电感-电容一体化结构 |
CN111181520A (zh) * | 2018-11-09 | 2020-05-19 | 恒劲科技股份有限公司 | 一种表面声波滤波器封装结构及其制作方法 |
CN212113714U (zh) * | 2020-05-29 | 2020-12-08 | 深圳陶陶科技有限公司 | 射频前端模组、射频通信装置和电子设备 |
CN112671366A (zh) * | 2021-01-20 | 2021-04-16 | 安徽安努奇科技有限公司 | 滤波电路、滤波器和多工器 |
CN113381715A (zh) * | 2021-06-21 | 2021-09-10 | 安徽安努奇科技有限公司 | 3d滤波电路与3d滤波器 |
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JP2002198629A (ja) | 2000-12-26 | 2002-07-12 | Kyocera Corp | 配線基板およびその製法 |
JP4177560B2 (ja) | 2001-03-16 | 2008-11-05 | 株式会社ルネサステクノロジ | 薄膜コンデンサ及び受動素子内蔵電子部品と高周波対応モジュール |
JP2005347782A (ja) | 2002-05-29 | 2005-12-15 | Ajinomoto Co Inc | Lc直列共振回路、lc直列共振回路内蔵基板、及びそれらの製造方法 |
JP2004311987A (ja) | 2003-03-27 | 2004-11-04 | Tdk Corp | 多層基板 |
JPWO2004089049A1 (ja) | 2003-03-28 | 2006-07-06 | Tdk株式会社 | 多層基板およびその製造方法 |
JP4200802B2 (ja) | 2003-04-11 | 2008-12-24 | 凸版印刷株式会社 | 素子内蔵基板及びその製造方法 |
JP2005109951A (ja) | 2003-09-30 | 2005-04-21 | Sony Corp | 共振器および誘電体フィルタ |
WO2014045775A1 (ja) | 2012-09-19 | 2014-03-27 | 株式会社村田製作所 | 回路内蔵基板および複合モジュール |
WO2016088540A1 (ja) | 2014-12-05 | 2016-06-09 | 三井金属鉱業株式会社 | 導電性組成物並びに配線基板及びその製造方法 |
US11114993B2 (en) * | 2018-12-20 | 2021-09-07 | Avx Corporation | High frequency multilayer filter |
CN111564426A (zh) * | 2020-05-29 | 2020-08-21 | 深圳陶陶科技有限公司 | 射频前端模组、射频通信装置和电子设备 |
-
2021
- 2021-06-21 CN CN202110685700.9A patent/CN113381715B/zh active Active
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2022
- 2022-05-18 WO PCT/CN2022/093484 patent/WO2022267756A1/zh active Application Filing
- 2022-05-18 KR KR1020237009729A patent/KR20230054861A/ko not_active Application Discontinuation
- 2022-05-18 JP JP2023515089A patent/JP7569519B2/ja active Active
- 2022-05-18 US US18/044,982 patent/US20230370039A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108766960A (zh) * | 2018-05-28 | 2018-11-06 | 哈尔滨工业大学 | 一种多用途电感-电容一体化结构 |
CN111181520A (zh) * | 2018-11-09 | 2020-05-19 | 恒劲科技股份有限公司 | 一种表面声波滤波器封装结构及其制作方法 |
CN212113714U (zh) * | 2020-05-29 | 2020-12-08 | 深圳陶陶科技有限公司 | 射频前端模组、射频通信装置和电子设备 |
CN112671366A (zh) * | 2021-01-20 | 2021-04-16 | 安徽安努奇科技有限公司 | 滤波电路、滤波器和多工器 |
CN113381715A (zh) * | 2021-06-21 | 2021-09-10 | 安徽安努奇科技有限公司 | 3d滤波电路与3d滤波器 |
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Publication number | Publication date |
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CN113381715A (zh) | 2021-09-10 |
KR20230054861A (ko) | 2023-04-25 |
JP7569519B2 (ja) | 2024-10-18 |
US20230370039A1 (en) | 2023-11-16 |
JP2023540348A (ja) | 2023-09-22 |
CN113381715B (zh) | 2024-06-28 |
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