WO2022257017A1 - 转移装置及其制作方法、检测方法及检测装置 - Google Patents

转移装置及其制作方法、检测方法及检测装置 Download PDF

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Publication number
WO2022257017A1
WO2022257017A1 PCT/CN2021/098972 CN2021098972W WO2022257017A1 WO 2022257017 A1 WO2022257017 A1 WO 2022257017A1 CN 2021098972 W CN2021098972 W CN 2021098972W WO 2022257017 A1 WO2022257017 A1 WO 2022257017A1
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Prior art keywords
colloidal crystal
protrusion
crystal layer
transfer device
transfer
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PCT/CN2021/098972
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English (en)
French (fr)
Inventor
翟峰
萧俊龙
蔡明达
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重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2021/098972 priority Critical patent/WO2022257017A1/zh
Priority to US17/941,036 priority patent/US20230005781A1/en
Publication of WO2022257017A1 publication Critical patent/WO2022257017A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other

Definitions

  • the present application relates to the field of chip transfer, in particular to a transfer device, a manufacturing method thereof, a detection method and a detection device.
  • Micro LED Due to its advantages of high brightness, wide color gamut and high contrast, Micro LED is sought after by various manufacturers. It is called the next generation display device, and its popularity has continued to rise in recent years; however, there are still many problems to be overcome in the actual production process. .
  • Micro The LED display panel includes several pixel areas, and in some application scenarios, each pixel area includes a red LED chip, a blue LED chip, and a green LED chip.
  • the transfer head In the production process of the Micro LED display panel, it is necessary to use the transfer head to transfer the red, green and blue LED chips from their respective growth substrates to the display backplane, and through the bonding process to the corresponding pads on the display backplane. electrical connection.
  • the bonding process currently used generally requires heating (mostly above 150°C) to realize the connection between the LED chip and the display backplane through pure metal solder.
  • PDMS Polydimethylsiloxane, polydimethylsiloxane
  • Micro-LED transfer which is divided into flat sheet transfer head and raised transfer head.
  • the transfer head is made by high-precision template method.
  • the protrusion of the raised transfer head prepared by this method is completely supported by PDMS adhesive material.
  • PDMS itself is a thermoplastic material, and it must withstand a certain temperature in actual use. And pressure, often cause the protrusion to be deformed due to heat and extrusion.
  • the bump-type transfer head Since the most critical factor of the bump-type transfer head is the flatness between the bumps, it is required that TTV (the height of the highest point - the height of the lowest point) ⁇ 2um, that is, the height difference between the bumps is required to be ⁇ 2um.
  • the protrusions of the protrusion-type transfer head are prone to irreversible deformation or damage and loss during the process of cyclic heating and pressure. In this application, the irreversible deformation or damage and loss are called abnormal protrusions. The generation of abnormal protrusions will cause TTV changes, making the raised transfer head unusable for the process. However, there is currently no effective means to detect whether abnormal protrusions appear on the raised transfer head.
  • the purpose of this application is to provide a transfer device and its manufacturing method, detection method and detection device, aiming to solve the problem of how to detect whether there are abnormal protrusions on the raised transfer head in the related art. question.
  • the application provides a transfer device, comprising a transfer head and a colloidal crystal layer arranged on the transfer head, wherein the transfer head includes:
  • Substrate at least one protrusion provided on the back of the substrate, the protrusion is used to attach and bond the chip to be transferred to pick up and transfer the chip to be transferred;
  • the colloidal crystal layer is formed on the protrusion, at least partially covering the side of the protrusion that is attached to the chip to be transferred, and the colloidal crystal layer includes colloidal crystal microspheres arranged in an orderly manner.
  • the Bragg reflection effect based on the colloidal crystal microsphere structure can present the characteristics of different light colors, so it can be based on the colloidal crystal layer on each protrusion.
  • the light reflected by Bragg reflection is used to determine whether the bumps are abnormal, thereby realizing the detection of whether there are abnormal bumps on the bump-type transfer head, and avoiding the transfer head with abnormal bumps from being used continuously to cause chip transfer failure or transfer failure. A qualifying situation occurs.
  • the present application also provides a method for manufacturing a transfer device, which is used to manufacture the transfer device as described above, including:
  • the transfer head mold including a template substrate body, a transfer head pattern formed on the template substrate body, the transfer head pattern including a groove forming the protrusion;
  • the transfer head mold is removed and the colloidal crystal layer remains on the transfer head.
  • a colloidal crystal layer is formed on the side where the protrusion of the transfer head is attached to the chip to be transferred, and the colloidal crystal layer includes colloidal crystal microspheres arranged in an orderly manner,
  • the Bragg reflection based on the colloidal crystal microsphere structure can present the characteristics of different light colors. It can be determined whether the protrusion is abnormal based on the light reflected by the Bragg reflection of the colloidal crystal layer on each protrusion, so as to realize whether the transfer head is Detection of abnormal protrusions.
  • the present application also provides a method for manufacturing a transfer device, which is used to manufacture the transfer device as described above, including:
  • the colloidal crystal layer is formed on the protrusions.
  • a colloidal crystal layer is also formed on the side where the protrusion of the transfer head is attached to the chip to be transferred, so it can also be based on the Bragg reflection of the colloidal crystal layer on the protrusion.
  • the reflected light is used to determine whether the bumps are abnormal, so that the detection of abnormal bumps on the transfer head can be realized.
  • the present application also provides a detection method for the transfer device as described above, including:
  • the light reflected by the colloidal crystal layer on the protrusion is detected, and whether the protrusion is abnormal is determined according to the detection result.
  • the transfer device is placed in a preset light environment, and the side of the transfer head where the protrusion and the chip to be transferred are attached faces the light incident direction, so that the colloidal crystal layer formed on the protrusion faces the light incident direction, Therefore, it can be determined whether the protrusion is abnormal according to the detection result of the light reflected by the colloid crystal layer on the detection protrusion, and the detection of whether there is an abnormal protrusion on the transfer head is realized.
  • the present application also provides a detection device for a transfer device, including:
  • a light detection device used to detect the light reflected by the colloidal crystal layer on the protrusion when the transfer device is placed in a preset light environment and the colloidal crystal layer on the protrusion faces the light incident direction. light, and determine whether the protrusion is abnormal according to the detection result.
  • the transfer device when the transfer device is placed in a preset light environment, and the side of the transfer head where the protrusion and the chip to be transferred are bonded faces the light incident direction, so that the colloidal crystal layer formed on the protrusion faces the light incident direction.
  • whether the protrusion is abnormal can be determined according to the detection result of the light reflected by the colloidal crystal layer on the detection protrusion, and the detection of whether there is an abnormal protrusion on the transfer head can be realized.
  • a colloidal crystal layer is formed on the side where the projection of the transfer head is attached to the chip to be transferred, and the colloidal crystal layer includes colloidal crystals arranged in order Crystal microspheres, based on the Bragg reflection of the colloidal crystal microsphere structure, can present the characteristics of different light colors, and can determine whether the protrusions are abnormal based on the light reflected by the Bragg reflection of the colloidal crystal layer on each protrusion, so as to realize Detection of abnormal protrusions on the transfer head.
  • Figure 1-1 is a schematic diagram of a transfer head in the related art
  • Figure 1-2 is a schematic diagram of the state of the transfer head in Figure 1-1 after use;
  • Fig. 2 is a schematic diagram of the first structure of the transfer head device provided by the embodiment of the present application.
  • Figure 3 is a schematic diagram of the orderly arrangement of colloidal crystal microspheres provided in the examples of the present application.
  • Figure 4 is a schematic diagram of the second structure of the transfer head device provided by the embodiment of the present application.
  • Figure 5 is a schematic diagram of the third structure of the transfer head device provided by the embodiment of the present application.
  • Fig. 6 is a schematic diagram 4 of the structure of the transfer head device provided by the embodiment of the present application.
  • Fig. 7 is a schematic diagram of a manufacturing method of a transfer head device provided in another optional embodiment of the present application.
  • FIG. 8 is a schematic flow diagram of forming alternate crystal layers provided by another alternative embodiment of the present application.
  • Fig. 9 is a schematic diagram of the manufacturing process of the transfer head device provided by another alternative embodiment of the present application.
  • Fig. 10-1 is a schematic diagram of a manufacturing method of a transfer head device provided in another optional embodiment of the present application.
  • Figure 10-2 is a schematic diagram of the manufacturing process of the transfer head device provided by another optional embodiment of the present application.
  • Fig. 11 is a schematic flow chart of forming alternate crystal layers provided by another optional embodiment of the present application.
  • Fig. 12 is a schematic diagram of a detection method of a transfer head device provided in another optional embodiment of the present application.
  • Fig. 13 is a schematic diagram of a mixed energy band structure provided by another optional embodiment of the present application.
  • Figure 14-1 is a schematic structural diagram of a transfer device without abnormal protrusions provided by another alternative embodiment of the present application.
  • Figure 14-2 is a schematic diagram of the light reflection area of the transfer device structure without abnormal protrusions provided by another alternative embodiment of the present application;
  • Fig. 14-3 is a schematic structural diagram of a transfer device with abnormal protrusions provided by another alternative embodiment of the present application.
  • Figure 14-4 is a schematic diagram of the light reflection area of the transfer device structure with abnormal protrusions provided by another alternative embodiment of the present application.
  • Fig. 15 is a schematic structural diagram of a detection device of another transferable device of the present application.
  • the protrusions of the protrusion-type transfer head tend to be irreversibly deformed or damaged and missing during the process of repeated heat and pressure, thus becoming abnormal protrusions.
  • the generation of abnormal protrusions will cause TTV changes, making the raised transfer head unusable for the process.
  • the transfer head shown in FIG. 1-1 the transfer head has a plurality of protrusions 1 for picking up chips to be transferred.
  • the protrusion 1 When the transfer head is used to pick up and transfer the chip to be transferred, the protrusion 1 is prone to irreversible deformation or damage and loss during the process of repeated heat and pressure, thus becoming an abnormal protrusion, for example, see Figure 1-2 As shown, a part of the protrusion A1 is missing, the protrusion A2 is tilted, and the protrusion A3 is deformed under pressure. These three protrusions are abnormal protrusions. When the abnormally protruding transfer head is continued to be used, it is easy to cause chip transfer failure or transfer failure. However, there is currently no effective means to detect whether abnormal protrusions appear on the raised transfer head.
  • This embodiment provides a transfer device, which includes a transfer head and a colloidal crystal layer, wherein the transfer head includes:
  • a substrate the substrate has a relative front and back; the transfer head also includes at least one protrusion located on the back of the substrate, the protrusion is used to attach and bond the chip to be transferred to pick up and transfer the chip to be transferred; in this embodiment
  • the substrate may include but not limited to a carrier substrate, the protrusion of the transfer head is disposed on the back of the carrier substrate; in some examples, the substrate may also include a support substrate attached to the front of the carrier substrate, or at least partially embedded in the carrier substrate,
  • the supporting substrate may be, but not limited to, a quartz substrate, a sapphire substrate, a glass substrate or a metal substrate.
  • the chips to be transferred in this embodiment may include but not limited to LED chips, and the LED chips may be but not limited to micro light emitting chips.
  • the micro light emitting chips in this embodiment refer to um level light emitting chips, for example may include but not Limited to Mini LED chips, Micro At least one of the LED chips.
  • the miniature light-emitting chip can also be replaced with a chip of other size according to the requirement, which will not be repeated here; and the chip in this embodiment is not limited to the light-emitting chip, and can also be replaced with other chips equivalently according to the requirement.
  • the number of protrusions on the back of the substrate can be flexibly set, and can be set as one protrusion according to application requirements, or as two or more protrusions according to requirements, and each protrusion The distance between them can be flexibly set according to specific application requirements, for example, it can be set correspondingly according to but not limited to the pad layout in the corresponding chip bonding area on the circuit backboard.
  • the circuit backplane in this embodiment may include, but not limited to, a display backplane and an illumination backplane.
  • the colloidal crystal layer of the transfer device is formed on the protrusion of the transfer head to at least partially cover the side of the protrusion adhering to the chip to be transferred, and the colloidal crystal layer includes colloidal crystal microspheres arranged in an orderly manner.
  • the Bragg reflection based on the colloidal crystal microsphere structure can present the characteristics of different light colors, so the light reflected based on the Bragg reflection of the colloidal crystal layer on each protrusion (for example, it can be based on but not limited to the color of the reflected light or wavelength) to determine whether the protrusion is abnormal, thereby realizing the detection of whether there is an abnormal protrusion on the raised transfer head, and avoiding the situation that the transfer head with abnormal protrusions is continued to be used and the chip transfer fails or the transfer is unqualified .
  • the colloidal crystal layer in this embodiment may cover the entire side of the transfer head where the protrusion is attached to the chip to be transferred, or may only cover a part thereof.
  • an exemplary transfer device is shown in FIG. 2, and its transfer head includes a substrate, the substrate includes a carrier substrate 12 and a support substrate 11 arranged on the carrier substrate 12, and a plurality of substrates formed on the back of the support substrate 11. Raised 13.
  • the transfer device also includes the process of covering the colloidal crystal layer 14 on the side where the protrusion 13 of the transfer head is attached to the chip to be transferred.
  • An example of colloidal crystal microspheres arranged in order in the colloidal crystal layer 14 is shown in FIG. 3 .
  • the colloidal crystal microspheres shown in Figure 3 can be but not limited to nanoscale colloidal crystal microspheres, for example, the particle size of the colloidal crystal microspheres can be greater than or equal to 173 nanometers, less than or equal to 190 nm; for example, in some application scenarios, the particle size of the colloidal crystal microspheres may be but not limited to 173 nm, 175 nm, 180 nm, 189 nm or 190 nm. And it should be understood that, in some application examples, the particle diameters of the colloidal crystal microspheres shown in FIG. 3 may be the same, or a part of the colloidal crystal microspheres may have different particle diameters. Of course, in some application scenarios in this embodiment, the particle size of the colloidal crystal microspheres can also be micron or smaller than nanometer.
  • FIG. 4 another example of this embodiment is shown in FIG. 4 .
  • the transfer device shown in this figure is mainly different in that the colloidal crystal layer 14 connects the protrusion 13 of the transfer head to the one to be treated. Partially cover the attached side of the transfer chip.
  • FIG. 5 Another example of this embodiment is shown in Figure 5.
  • the transfer device shown in this figure is mainly different in that the colloidal crystal layer 14 connects the protrusion 13 of the transfer head to the chip to be transferred.
  • the sides of the protrusions 13 are also covered, and the colloidal crystal layer 14 can cover all of the sides of the protrusions 13, or only partially cover the sides of the protrusions 13.
  • FIG. 6 Another example of this embodiment is shown in Figure 6.
  • the transfer device shown in this figure is mainly different in that the colloidal crystal layer 14 connects the bump 13 of the transfer head to the chip to be transferred.
  • the side of the protrusion 13 and the back of the carrier substrate 12 are also covered.
  • the colloidal crystal layer 14 can cover all the sides of the protrusion 13, and also can only partially cover the side of the protrusion 13; 12. The back part is covered.
  • the area covered by the colloidal crystal layer 14 in this embodiment is at least partially covered on the side where the protrusion 13 is attached to the chip to be transferred, and the colloidal crystal layer 14 satisfies the Bragg reflection effect.
  • the specific area covered by the layer 14 can be flexibly set, and is not limited to the coverage area shown in the above several examples.
  • the material of the colloidal crystal microspheres included in the colloidal crystal layer 14 can also be flexibly selected under the condition of satisfying the Bragg reflection effect.
  • the colloidal crystal microspheres include but are not limited to silicon dioxide SiO2 At least one of microspheres and polymer material microspheres, wherein polymer material microspheres can include but not limited to polystyrene microspheres, polyacrylic acid microspheres and nanoscale microspheres formed by copolymerization of various monomers at least one.
  • the colloidal crystal microspheres included in the colloidal crystal layer 14 can be colloidal crystal microspheres of a material, such as Sio2 microspheres, polystyrene microspheres, polyacrylic acid One of the nano-scale microspheres formed by the copolymerization of microspheres and various monomers.
  • the colloidal crystal microspheres included in the colloidal crystal layer 14 can also include colloidal crystal microspheres of various materials, such as Sio2 microspheres, polystyrene microspheres, polyacrylic acid microspheres and various monomers copolymerized At least two of the nanoscale microspheres.
  • the colloidal crystal layer disposed on the protrusion may further include: a preset material used to fill the gaps between the colloidal crystal microspheres of the colloidal crystal layer for forming the protrusion.
  • the colloidal crystal microspheres may occupy 74% of the space of the colloidal crystal layer, and the remaining 26% of the space is occupied by the predetermined material used to form the protrusions.
  • the space ratios of the colloidal crystal microspheres and the preset materials for forming protrusions can be flexibly set according to application requirements; the preset materials for forming protrusions are filled in the gaps between the colloidal crystal microspheres, which can ensure After the colloidal crystal layer is formed on the protrusion, it can still form reliable bonding with the chip to be transferred, so as to pick up and transfer the chip to be transferred.
  • the above protrusions can form adhesion through direct contact with the chip to be transferred, but not limited to, and through the adhesive force, the chip to be transferred can be separated from the temporary substrate or the chip on the growth substrate, from the temporary substrate or The growth substrate is detached and transferred to a circuit backplate.
  • the selection of the preset material for forming the protrusion can satisfy the adhesion force between the protrusion and the chip to be transferred, which is greater than the bonding force between the chip to be transferred and the temporary substrate or the growth substrate to realize chip pickup, and less than After the chips to be transferred are transferred to the circuit backplane or other circuit boards and bonded, the bonding force between the chips to be transferred and the circuit backplane or other circuits is completed to release the chips to be transferred.
  • the material of the protrusion may include but not limited to PDMS, and of course it may be replaced with other materials satisfying the above conditions.
  • the material of the carrying substrate may be the same as that of the protrusion, and at this time, the protrusion and the carrying substrate may be integrally formed or may not be integrally formed. Certainly, in some other examples, the material of the protrusion and the material of the supporting substrate may also be different.
  • the space between the colloidal crystal microspheres of the colloidal crystal layer disposed on the protrusion may not contain the predetermined material for forming the protrusion, and the space may remain empty.
  • the transfer device provided in this embodiment includes a raised transfer head with at least one protrusion formed on the substrate, and a colloidal crystal layer is formed on the protrusion of the raised transfer head, and the colloidal crystal layer includes ordered The colloidal crystal microspheres arranged, and at least partially cover the side where the protrusions are attached to the chip to be transferred; the Bragg reflection effect based on the colloidal crystal microsphere structure can present the characteristics of different light colors, so it can be based on each protrusion.
  • the light reflected by the Bragg reflection of the colloidal crystal layer is used to determine whether the bumps are abnormal, thereby realizing the detection of whether there are abnormal bumps on the bump transfer head, and avoiding the chip transfer caused by the continued use of the transfer head with abnormal bumps
  • the occurrence of failure or unqualified transfer is more conducive to improving the yield rate of lighting products or display products and reducing costs.
  • this embodiment provides an example method of manufacturing a transfer device, which is used to manufacture the transfer device shown above.
  • a colloidal crystal layer can be formed on the protrusions of the transfer head during the process of making the transfer head.
  • the production process is shown in Figure 7, which includes but is not limited to:
  • the transfer head mold prepared in this step includes a template substrate main body, a transfer head pattern formed on the template substrate body, and the transfer head pattern includes grooves for forming protrusions on the transfer head.
  • the stencil substrate body in this embodiment may be, but not limited to, a silicon substrate body, and may also be replaced by other materials.
  • the pattern of the transfer head can be formed by but not limited to etching and the like.
  • S702 Forming a colloidal crystal layer at least at the bottom of the groove of the transfer head pattern.
  • the formed colloidal crystal layer can completely cover the bottom of the groove to form the colloidal crystal layer 14 shown in FIG. Part of it is covered to form the colloidal crystal layer 14 shown in FIG. 4 .
  • the colloidal crystal layer can also cover the sidewall of the groove to form the colloidal crystal layer 14 shown in Figure 5, and can also cover the sidewall of the groove and the main body of the template substrate forming the transfer head pattern according to requirements to form a pattern. 6 shows the colloidal crystal layer 14 .
  • FIG. 8 the manner of forming a colloidal crystal layer at least at the bottom of the groove is shown in FIG. 8, which may include but not limited to:
  • Matching colloidal crystal microspheres are selected and dispersed in a volatile solvent to obtain a microsphere mixture.
  • the selected volatile solvent has no effect on the predetermined material for forming protrusions.
  • the predetermined material is PDMS material
  • the selected volatile solvent can be but not limited to an oil solvent.
  • isopropanol and other fast-volatile inert solvents oil phase solvent non-aqueous phase
  • disperse colloidal crystal microspheres such as SiO2 microspheres
  • Unaffected inert solvents yield microsphere mixtures.
  • the colloidal crystal microspheres self-assemble through gravity to form a three-dimensional ordered volume cubic or face cubic structure similar to that shown in FIG. 3 by utilizing the volatilization characteristics of the volatile solvent.
  • it can be evenly coated on the bottom of the groove by but not limited to inkjet printing technology or spraying technology.
  • the pattern of the transfer head can be filled with the preset material forming the transfer head by means of but not limited to embossing, spray coating, spin coating and the like.
  • the bump can use PDMS material, which can be used to bond the chip, and the adhesion is stronger than that of the bonding adhesive on the temporary substrate, but it is weaker than the soldering force of the metal solder after welding, and the PDMS material in this embodiment can be selected UV-curable silicone material: UV-curable silicone material has a low thermal curing shrinkage rate, and the actual cured array structure has the best match with the actual design, which can further improve the yield rate of bumps.
  • a transfer head pattern is formed on the stencil substrate main body 15 .
  • the transfer head pattern includes grooves 151 for forming protrusions.
  • S904 Filling the pattern of the transfer head with a preset material and curing it to obtain a transfer head.
  • the pre-filled materials include a substrate material 121 for forming a carrier substrate and a protrusion material 131 for forming protrusions.
  • S905 Paste the supporting substrate 11 on the filled preset material, and cure the preset material to obtain a transfer head.
  • the transfer device made by the above method has a colloidal crystal layer formed on the protrusions of the transfer device, and the Bragg reflection effect based on the colloidal crystal microsphere structure can present the characteristics of different light colors, so it can be based on the colloidal crystals on each protrusion.
  • the light reflected by the Bragg reflection of the layer is used to determine whether the bumps are abnormal, to detect whether there are abnormal bumps on the bump transfer head, and to avoid various problems caused by the continued use of the transfer head with abnormal bumps.
  • the transfer device can be used to pick up and transfer the chips to be transferred, and then the transfer head of the transfer device can be detected.
  • this embodiment provides another exemplary method for manufacturing a transfer device, which is used to manufacture the transfer device shown above.
  • the colloidal crystal layer can be formed on the protrusions of the transfer head after the transfer head is manufactured.
  • the production process is shown in Figure 10-1, which includes but is not limited to:
  • the manner of making the transfer head may be, but not limited to, the manner shown in FIG. 9 above, the difference being that S902 and S903 are omitted.
  • Figure 11 the process of forming a colloidal crystal layer on a protrusion is shown in Figure 11, which may include but not limited to:
  • This step may adopt, but is not limited to, the step shown in S801 above, which will not be repeated here.
  • S1102 Coating the microsphere mixture at least on the side where the protrusion is attached to the chip to be transferred. Through the volatilization of the volatile solvent, the colloidal crystal microspheres self-assemble to form a colloidal crystal layer by gravity.
  • the area where the microsphere mixture is coated on the protrusion can be flexibly selected according to requirements. For example, refer to the colloidal crystal layer shown in Figure 2, Figure 4-6, and coat the microsphere mixture on the corresponding area on the transfer head , which will not be repeated here.
  • the transfer head after the transfer head is manufactured in S1001 above, and before the colloidal crystal layer is formed on the protrusion, it may further include:
  • the prepared transfer head to transfer the chip to be transferred, so that the colloidal crystal layer can be directly made on the used transfer head, and the light reflected by the Bragg reflection of the colloidal crystal layer can be used to determine whether the protrusion is abnormal, and realize the convexity. Detection of abnormal protrusions on the lifting transfer head.
  • This embodiment provides a detection method for the transfer device shown in the above embodiments, as shown in Figure 12, which includes but is not limited to:
  • S1201 Place the transfer device in a preset light environment, and the colloidal crystal layer provided on the protrusion of the transfer device faces (that is, faces) the light incident direction, so that light can enter the colloidal crystal layer.
  • the preset light environment in S1201 can be a preset natural light environment, or a preset light source illumination environment; as long as the light incident on the colloidal crystal layer on the protrusion meets the detection conditions.
  • S1202 Detect the light reflected by the colloidal crystal layer on the protrusion, and determine whether the protrusion is abnormal according to the detection result.
  • k is a coefficient
  • D is the particle size of the colloidal crystal microsphere
  • n is the refractive index of the colloidal crystal microsphere
  • ⁇ is the light incident angle. Therefore, when the material of the colloidal crystal microsphere is selected, Its refractive index n can then be determined, and for a protrusion that does not appear abnormal, its normal light incident angle ⁇ can be obtained under a preset light environment; then a preset standard color can be selected to determine its wavelength. For example, when blue is selected, the wavelength ⁇ of blue can be determined; and then the above parameters can be substituted into the above formula (1) to obtain the value of the particle size D of the crystal microspheres.
  • the above-mentioned determined materials and particle sizes of the colloidal crystal microspheres can be used to form the colloidal crystal layer.
  • the color of the light reflected from the colloidal crystal layer on the bump is the same as the preset standard color or the difference is within the preset standard range and the color of the light reflected by the colloidal crystal layer on the abnormal protrusion is the same as the preset standard color, or is not within the preset standard range.
  • detecting the light reflected by the colloidal crystal layer on the protrusion, and determining whether the protrusion is abnormal according to the detection result may include:
  • the actual color of the light reflected by the colloidal crystal layer on the protrusion is observed, and whether the protrusion is abnormal is determined according to the difference between the observed actual color and the preset standard color.
  • the observation in this embodiment can be visual observation directly manually through vision, and the detection method is simple and effective.
  • colloidal crystal microspheres as Sio2 microspheres as an example, its n is a fixed value, and the particle diameter of the corresponding Sio2 microspheres selected is between 173 nanometers and 190 nanometers, and the colloidal crystal layer reflects The emitted light has a wavelength of 420 nanometers to 460 nanometers, and will appear blue. Therefore, in some examples, Sio2 microspheres with a particle size between 173 nm and 190 nm can be selected to form a colloidal crystal layer. If the preset standard color is set to blue, the reflection of the colloidal crystal layer on the protrusion can be observed. Whether the actual color of the emitted light is blue, if not, it can be determined whether the protrusion is abnormal.
  • the particle size of Sio2 microspheres is selected as 189nm, which shows a blue wavelength of 457nm; therefore, in some examples, the particle size of 189nm can be selected as Sio2 microspheres
  • the spheres form a layer of colloidal crystals, and the preset standard color is blue. It should be understood that on the basis of the above principles, the preset standard color can be adjusted by flexibly adjusting at least one of the material and particle size of the colloidal crystal microspheres, and is not limited to the Sio2 material and particle size of the above examples Correspondence with blue wavelength.
  • the detection of the light reflected by the colloidal crystal layer on the protrusion in the above S1202, and determining whether the protrusion is abnormal according to the detection result may also include:
  • the actual light incident angle ⁇ 1 of the bump is calculated by the following formula (2);
  • k is a coefficient
  • D is the particle diameter of the colloidal crystal microsphere
  • n is the refractive index of the colloidal crystal microsphere.
  • the standard light incident angle ⁇ 0 in this embodiment is the incident angle of light obtained under the above detection environment when no abnormality occurs in the protrusion. Therefore, according to the difference between the actual light incident angle ⁇ 1 and the preset standard light incident angle ⁇ 0 , it can be determined whether the corresponding protrusion is enough to be squeezed, deformed, missing or inclined; and according to the specific difference between the two The amount of deformation that characterizes the occurrence of the corresponding protrusion can be determined.
  • the actual light incident angle changes due to its deformation, that is, the formula (1)
  • ⁇ changes, so the color of the light reflected by the colloidal crystal layer changes, so that the color difference can be shown; and in some examples, the protrusions in different squeezes
  • the color of the light reflected by the colloidal crystal layer on it is different, and the specific extrusion situation can be further determined according to the corresponding light color through statistics, such as the colors corresponding to different deformation amounts, etc.; so that when testing , the usage status of the bumps can be intuitively judged according to the color of the light reflected by the colloidal crystal layer on each bump; the test is simple, efficient, low in cost, and high in accuracy.
  • each protrusion 13 on the transfer head is in a normal state, then under the preset light environment, the colloid on the protrusion
  • the reflected light regions 51 of the crystal layer are all blue.
  • the protrusion C1, the protrusion C2 and the protrusion C3 have abnormalities, and the protrusion C4 is a normal protrusion.
  • the reflected light areas corresponding to the protrusions C1, C2 and C3 are no longer blue, so the color of the reflected light areas corresponding to the protrusions is It can be visually determined whether the protrusion becomes abnormal during use.
  • This embodiment also provides a detection device for detecting the transfer device shown in the above embodiments, as shown in Figure 15, which includes but is not limited to:
  • Light detection equipment 61 used to detect the light reflected by the colloidal crystal layer on the protrusion when the transfer device is placed in a preset light environment, and when the side of the protrusion that is attached to the chip to be transferred is facing the light incident direction , and determine whether the protrusion is abnormal according to the detection result.
  • detection process reference may be made to but not limited to the above-mentioned examples, which will not be repeated here.
  • the detection device may further include a transport device for transporting the transfer device to be detected to a preset light environment, or a light source device for generating a corresponding light source, and the like.
  • the light detection device 61 may include but not limited to:
  • Wavelength collection device 611 used to collect the actual wavelength ⁇ 1 of the light reflected by the colloidal crystal layer on the protrusion; the wavelength collection device 611 can be but not limited to a spectrometer;
  • the analysis device 612 is used to calculate the actual light incident angle ⁇ 1 of the protrusion through the above formula ( 2 ) according to ⁇ 1, and determine whether the protrusion is abnormal.
  • This embodiment also provides a display screen, including a frame and a display panel; the display panel is fixed on the frame; the display panel includes a display backplane, and several micro light-emitting chips arranged on the display backplane, wherein the several micro light-emitting chips
  • the micro light-emitting chips on the display backplane have better consistency after bonding, thereby improving the display effect of the display screen.
  • the display screen can be applied to but not limited to various intelligent mobile terminals, vehicle-mounted terminals, PCs, monitors, electronic billboards and the like.
  • This embodiment also provides a spliced display screen, including that the spliced display screen can be formed by splicing at least two display screens as shown above. Since the micro light-emitting chips of the display screen have better consistency after bonding, it can be further improved. Ensure the consistency of the micro light-emitting chips between the spliced display screens after bonding, and improve the visual effect.

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Abstract

本申请涉及一种转移装置及其制作方法、检测方法及检测装置，转移装置包括转移头，转移头的凸起上形成有胶体晶体层，基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，根据各凸起上的胶体晶体层反射出的光确定凸起是否异常。

Description

转移装置及其制作方法、检测方法及检测装置 技术领域
本申请涉及芯片转移领域，尤其涉及一种转移装置及其制作方法、检测方法及检测装置。
 背景技术
Micro LED 由于其亮度高、色域覆盖广和对比对高等优势受到各家厂商的追捧，被称为次世代显示装置，近年来热度持续上升；但在实际的生产过程中还有诸多问题需要克服。例如，Micro LED显示面板上包括了若干像素区域，在一些应用场景中，每个像素区域包括红光LED芯片、蓝光LED芯片、绿光LED芯片。在Micro LED显示面板的制作过程中，需要利用转移头将红绿蓝三种LED芯片从各自的生长基板转移到显示背板上并通过绑定（bonding）工艺与显示背板上对应的焊盘电连接。目前采用的绑定工艺一般需要进行加热（大都在150℃以上）实现LED芯片和显示背板通过单纯金属焊料的连接。
PDMS（Polydimethylsiloxane，聚二甲基硅氧烷）转移头是实现Micro-LED转移的重要媒介，分为平片式转移头以及凸起式转移头。现阶段的转移头是通过高精度模板法来制作成型，由此制备的凸起式转移头的凸起完全是PDMS胶材支撑，PDMS本身材料是热塑性质，在实际使用时要承受一定的温度和压力，往往会导致凸起受热受挤压而发生变形。由于凸起式转移头最关键的因素是凸起之间的平整性，要求TTV（最高点高度-最低点高度）＜2um，也即要求各凸起之间的高度差＜2um。凸起式转移头的凸起在循环往复受热受压力过程中容易发生不可恢复的形变或受损缺失，本申请中称发生不可恢复的形变或受损缺失为异常凸起。异常凸起的产生会引起TTV变化，导致凸起式转移头无法应用于制程。而当前尚无有效手段来检测凸起式转移头上是否出现异常凸起。
因此，如何检测凸起式转移头上是否出现异常凸起是亟需解决的问题。
 技术问题
鉴于上述现有技术的不足，本申请的目的在于提供一种转移装置及其制作方法、检测方法及检测装置，旨在解决相关技术中，如何检测凸起式转移头上是否出现异常凸起的问题。
 技术解决方案
本申请提供一种转移装置，包括转移头和设于所述转移头上的胶体晶体层，其中，所述转移头包括：
基板，设于所述基板背面上的至少一个凸起，所述凸起用于与待转移芯片贴合粘接以拾取转移所述待转移芯片；
所述胶体晶体层形成于所述凸起上，将所述凸起与所述待转移芯片相贴合的一面至少部分覆盖，所述胶体晶体层包括有序排列的胶体晶体微球。
上述转移装置中，包括在基板上形成有至少一个凸起的凸起式转移头，且该凸起式转移头的凸起上形成有胶体晶体层，该胶体晶体层包括有序排列的胶体晶体微球，且将凸起与待转移芯片相贴合的一面至少部分覆盖；基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，因此可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，从而实现了凸起式转移头上是否出现异常凸起的检测，避免出现异常凸起的转移头被继续使用而造成芯片转移失败或转移不合格的情况发生。
基于同样的发明构思，本申请还提供一种转移装置制作方法，用于制作如上所述的转移装置，包括：
制作转移头模具，所述转移头模具包括模版基板主体，在所述模版基板主体上形成的转移头图案，所述转移头图案包括形成所述凸起的凹槽；
至少在所述凹槽的底部形成所述胶体晶体层；
在所述转移头图案上填充预设材料并固化处理得到所述转移头；
去除所述转移头模具，所述胶体晶体层保留在所述转移头上。
上述转移装置制作方法所制得的转移装置中，在转移头的凸起与待转移芯片相贴合的一面上，形成有胶体晶体层，该胶体晶体层包括有序排列的胶体晶体微球，基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，从而可实现转移头上是否出现异常凸起的检测。
基于同样的发明构思，本申请还提供一种转移装置制作方法，用于制作如上所述的转移装置，包括：
制作好所述转移头；
在所述凸起上形成所述胶体晶体层。
上述转移装置制作方法所制得的转移装置中，在转移头的凸起与待转移芯片相贴合的一面上也形成有胶体晶体层，因此也能基于凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，从而可实现转移头上是否出现异常凸起的检测。
基于同样的发明构思，本申请还提供一种如上所述的转移装置的检测方法，包括：
将所述转移装置置于预设光环境下，所述凸起上的所述胶体晶体层朝向光入射方向；
检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常。
上述检测方法中，将转移装置置于预设光环境下，且转移头的凸起与待转移芯片相贴合的一面朝向光入射方向，使得凸起上形成的胶体晶体层朝向光入射方向，从而可根据检测凸起上的胶体晶体层反射出的光的检测结果来确定凸起是否异常，实现转移头上是否出现异常凸起的检测。
基于同样的发明构思，本申请还提供一种转移装置的检测装置，包括：
光检测设备，用于在所述转移装置置于预设光环境下，且所述凸起上的所述胶体晶体层朝向光入射方向时，检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常。
上述检测光检测设备，在将转移装置置于预设光环境下，且转移头的凸起与待转移芯片相贴合的一面朝向光入射方向，使得凸起上形成的胶体晶体层朝向光入射方向时，可根据检测凸起上的胶体晶体层反射出的光的检测结果来确定凸起是否异常，实现转移头上是否出现异常凸起的检测。
 有益效果
本申请提供的转移装置及其制作方法、检测方法及检测装置，在转移头的凸起与待转移芯片相贴合的一面上，形成有胶体晶体层，该胶体晶体层包括有序排列的胶体晶体微球，基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，从而可实现转移头上是否出现异常凸起的检测。
 附图说明
图1-1为相关技术中的转移头示意图；
图1-2为图1-1中转移头使用后的状态示意图；
图2为本申请实施例提供的转移头装置结构示意图一；
图3为本申请实施例提供的胶体晶体微球有序排列示意图；
图4为本申请实施例提供的转移头装置结构示意图二；
图5为本申请实施例提供的转移头装置结构示意图三；
图6为本申请实施例提供的转移头装置结构示意图四；
图7为本申请另一可选实施例提供的转移头装置制作方法示意图；
图8为本申请另一可选实施例提供的形成交替晶体层的流程示意图；
图9为本申请另一可选实施例提供的转移头装置制作过程示意图；
图10-1为本申请又一可选实施例提供的转移头装置制作方法示意图；
图10-2为本申请另一可选实施例提供的转移头装置制作过程示意图；
图11为本申请又一可选实施例提供的形成交替晶体层的流程示意图；
图12为本申请另一可选实施例提供的转移头装置的检测方法示意图；
图13为本申请另一可选实施例提供的混合能带结构示意图；
图14-1为本申请另一可选实施例提供的无异常凸起的转移装置结构示意图；
图14-2为本申请另一可选实施例提供的无异常凸起的转移装置结构的光反射区域示意图；
图14-3为本申请另一可选实施例提供的有异常凸起的转移装置结构示意图；
图14-4为本申请另一可选实施例提供的有异常凸起的转移装置结构的光反射区域示意图；
图15为本申请另一可转移装置的检测装置结构示意图；
附图标记说明：
1，13-凸起，11-支撑基板，12-承载基板，121-基板材料，131-凸起材料，14-胶体晶体层，141-微球混合液，15-模版基板主体，151-凹槽，61-光检测设备，611-波长采集设备，612-分析设备。
 本发明的实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。
相关技术中，凸起式转移头的凸起在循环往复受热受压力过程中容易发生不可恢复的形变或受损缺失从而变为异常凸起。异常凸起的产生会引起TTV变化，导致凸起式转移头无法应用于制程。例如参见图1-1所示的转移头，该转移头具有多个用于拾取待转移芯片的凸起1。该转移头在用于拾取、转移待转移芯片的过程中，凸起1在循环往复受热受压力过程中容易发生不可恢复的形变或受损缺失从而变为异常凸起，例如参见图1-2所示，其中的凸起A1缺失了一部分，凸起A2发生了倾斜，凸起A3被加压变形，这三个凸起都是异常凸起。当出现异常凸起的转移头被继续使用时容易造成芯片转移失败或转移不合格的情况发生。而当前尚无有效手段来检测凸起式转移头上是否出现异常凸起。
基于此，本申请希望提供一种能够解决上述技术问题的方案，其详细内容将在后续实施例中得以阐述。
本实施例提供了一种转移装置，其包括转移头和胶体晶体层，其中，转移头包括：
基板，该基板具有相对的正面和背面；转移头还包括设于基板背面上的至少一个凸起，该凸起用于与待转移芯片贴合粘接以拾取转移待转移芯片；本实施例中的基板可包括但不限于承载基板，转移头的凸起设置于承载基板的背面上；在一些示例中，基板还可包括贴合在承载基板的正面上，或至少一部分嵌入承载基板的支撑基板，该支撑基板可采用但不限于石英基板、蓝宝石基板、玻璃基板或金属基板。
本实施例中的待转移芯片可以包括但不限于LED芯片，且该LED芯片可以为但不限于微型发光芯片，本实施例中的微型发光芯片是指um级的发光芯片，例如可包括但不限于Mini LED芯片、Micro LED芯片中的至少一种。当然，该微型发光芯片也可根据需求替换为其他尺寸的芯片，在此不再赘述；且本实施例中的芯片并不限于发光芯片，也可根据需求等同的替换为其他芯片。
本实施例中，设于基板背面上的凸起的个数可以灵活设置，可根据应用需求设置为一个凸起，也可根据需求设置为两个或两个以上的凸起，且各凸起之间的间距可根据具体应用需求灵活设置，例如可根据但不限于电路背板上对应的芯片键合区内的焊盘布局对应设置。本实施例中的电路背板可包括但不限于显示背板，照明背板。
本实施例中，转移装置的胶体晶体层形成于转移头的凸起上，将凸起与待转移芯片相贴合的一面至少部分覆盖，该胶体晶体层包括有序排列的胶体晶体微球。基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，因此可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光（例如可以但不限于基于反射出的光的颜色或波长）来确定凸起是否异常，从而实现了凸起式转移头上是否出现异常凸起的检测，避免出现异常凸起的转移头被继续使用而造成芯片转移失败或转移不合格的情况发生。
应当理解的是，本实施例中的胶体晶体层可以将转移头的凸起与待转移芯片相贴合的一面全部覆盖，也可仅覆盖其中的一部分。例如，一种示例的转移装置参见图2所示，其转移头包括基板，该基板包括承载基板12和设置于承载基板12之上的支撑基板11，以及形成于支撑基板11背面上的多个凸起13。该转移装置还包括将转移头的凸起13与待转移芯片相贴合的一面全部覆盖胶体晶体层14。胶体晶体层14包括的有序排列的胶体晶体微球的一种示例参见图3所示。
在本实施例中的一种示例中，图3所示的胶体晶体微球可为但不限于纳米级胶体晶体微球，例如该胶体晶体微球的粒径可为大于等于173纳米，小于等于190纳米；例如，一些应用场景中，胶体晶体微球的粒径可为但不限于173纳米，175纳米，180纳米，189纳米或190纳米。且应当理解的是，在一些应用示例中，图3所示的各胶体晶体微球的粒径可以相同，也可存在一部分胶体晶体微球的粒径不同。当然，本实施例中一些应用场景中，胶体晶体微球的粒径也可为微米级或小于纳米级。
又例如，本实施例的另一示例参见图4所示，该图所示的转移装置与图2所示的转移装置相比，主要区别在于胶体晶体层14将转移头的凸起13与待转移芯片相贴合的一面部分覆盖。
本实施例的又一示例参见图5所示，该图所示的转移装置与图2所示的转移装置相比，主要区别在于胶体晶体层14将转移头的凸起13与待转移芯片相贴合的一面全部覆盖外，还将凸起13的侧面覆盖，且胶体晶体层14可以将凸起13的侧面全部覆盖，也可仅将凸起13的侧面部分覆盖。
本实施例的另一示例参见图6所示，该图所示的转移装置与图2所示的转移装置相比，主要区别在于胶体晶体层14将转移头的凸起13与待转移芯片相贴合的一面全部覆盖外，还将凸起13的侧面覆盖以及将承载基板12的背面也覆盖。且胶体晶体层14可以将凸起13的侧面全部覆盖，也可仅将凸起13的侧面部分覆盖；同理，胶体晶体层14可以将承载基板12的背面全部覆盖，也可仅将承载基板12的背面部分覆盖。
根据以上各示例可知，本实施例中胶体晶体层14所覆盖的区域在满足将凸起13与待转移芯片相贴合的一面至少部分覆盖，且胶体晶体层14满足布拉格反射作用外，胶体晶体层14具体所覆盖的区域可灵活设置，且不限于上述几种示例所示的覆盖区域。
同样，在本实施例中，胶体晶体层14中所包括的胶体晶体微球的材质在满足布拉格反射作用的情况下，也可灵活选用，例如，胶体晶体微球包括但不限于二氧化硅Sio2微球和聚合物材质微球中的至少一种，其中聚合物材质微球可以包括但不限于聚苯乙烯微球，聚丙烯酸微球和多种单体共聚而成的纳米级微球中的至少一种。应当理解的是，在本实施例的一些示例中，胶体晶体层14中所包括的胶体晶体微球可以是一种材质的胶体晶体微球，例如Sio2微球，聚苯乙烯微球，聚丙烯酸微球和多种单体共聚而成的纳米级微球中的一种。当然，胶体晶体层14中所包括的胶体晶体微球也可包括多种材质的胶体晶体微球，例如Sio2微球，聚苯乙烯微球，聚丙烯酸微球和多种单体共聚而成的纳米级微球中的至少两种。
在本实施例的一些示例中，设置于凸起上的胶体晶体层还可包括：填充于胶体晶体层的各胶体晶体微球之间的空隙内，用于形成凸起的预设材料。在本实施例的一些示例中，胶体晶体微球可占用胶体晶体层的74%的空间，剩余的26%空间被用于形成凸起的预设材料占用。当然，胶体晶体微球和形成凸起的预设材料各自占用的空间比可根据应用需求灵活设置；用于形成凸起的预设材料填充于各胶体晶体微球之间的空隙内，可保证在凸起上形成胶体晶体层后仍可与待转移芯片形成可靠的粘接，以进行待转移芯片的拾取和转移。
在本实施例中，以上各凸起可通过但不限于与待转移芯片之间直接接触形成粘附，并通过粘附力将待转移芯片从临时基板或生长基板上的芯片，从临时基板或生长基板上脱离，并转移至电路背板上。此时，形成凸起的预设材料的选择，可满足凸起与待转移芯片之间的粘附力，大于待转移芯片与临时基板或生长基板之间的结合力以实现芯片的拾取，小于待转移芯片转移至电路背板或其他电路板上并完成键合后，待转移芯片与电路背板或其他电路之间的结合力，以完成待转移芯片的释放。例如，一种示例中该凸起的材质可以包括但不限于PDMS，当然也可替换成其他满足上述条件的材质。在本示例中，承载基板的材质可与凸起相同，此时凸起可与承载基板可采用一体成型的方式形成，也可不采用一体成型的方式形成。当然，在另一些示例中，凸起的材质与承载基板的材质也可不同。
在本实施例的另一些示例中，设置于凸起上的胶体晶体层的各胶体晶体微球之间的空隙内可不包括用于形成凸起的预设材料，该空隙可保持为空。
本实施例所提供的转移装置，包括在基板上形成有至少一个凸起的凸起式转移头，且该凸起式转移头的凸起上形成有胶体晶体层，该胶体晶体层包括有序排列的胶体晶体微球，且将凸起与待转移芯片相贴合的一面至少部分覆盖；基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，因此可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，从而实现了凸起式转移头上是否出现异常凸起的检测，避免出现异常凸起的转移头被继续使用而造成芯片转移失败或转移不合格的情况发生，更利于提升照明产品或显示产品的良品率，降低成本。
另一可选实施例：
为了便于理解，本实施例提供了一种示例的转移装置的制作方法，用于制作如上所示的转移装置。本实施例中，可以在制作转移头的过程，在转移头的凸起上形成胶体晶体层。该制作过程参见图7所示，其包括但不限于：
S701：制作转移头模具。
本步骤中制得的转移头模具包括模版基板主体，在模版基板主体上形成的转移头图案，该转移头图案包括用于形成转移头上的凸起所对应的凹槽。本实施例中的模版基板主体可以采用但不限于硅基板主体，也可采用其他材质替换。且可以采用但不限于蚀刻等方式形成转移头图案。
S702：至少在转移头图案的凹槽的底部形成胶体晶体层。
应当理解的是，在凹槽的底部形成胶体晶体层时，形成的胶体晶体层可以将凹槽的底部全部覆盖以形成图2所示的胶体晶体层14，也可以将凹槽的底部中的其中一部分覆盖以形成图4所示的胶体晶体层14。当然，胶体晶体层还可将凹槽的侧壁覆盖以形成图5所示的胶体晶体层14，还可根据需求将凹槽的侧壁和模版基板主体形成转移头图案的一面覆盖以形成图6所示的胶体晶体层14。
在本实施例中，至少在凹槽的底部形成胶体晶体层的方式参见图8所示，其可包括但不限于：
S801：将胶体晶体微球混合于易挥发溶剂中得到微球混合液。
选取匹配的胶体晶体微球分散于易挥发溶剂中得到微球混合液。且选择的易挥发溶剂对形成凸起的预设材料无影响，例如，预设材料为PDMS材料时，选择的易挥发溶剂可为但不限于油项溶剂。比如异丙醇等快速挥发性且对PDMS材料无影响的惰性溶剂（油相溶剂非水相），将胶体晶体微球（例如SiO2微球）分散于异丙醇等快速挥发性且对PDMS材料无影响的惰性溶剂得到微球混合液。
S802：至少在凹槽的底部涂覆微球混合液。
至少在凹槽的底部涂覆微球混合液后，利用易挥发溶剂的挥发特性，胶体晶体微球通过重力自组装形成类似图3所示的三维有序的体立方或者面立方结构。
在本实施例的一些示例中，可通过但不限于喷墨打印技术或者喷涂技术等将其均匀涂覆在凹槽的底部。
S703：在转移头图案上填充预设材料并固化处理得到转移头。
在本实施例中，在转移头图案上填充预设材料后，该预设材料的一部分填充于各胶体晶体微球之间的空隙内。
例如，一些示例中，可通过但不限于模压、喷涂、旋涂等方式在转移头图案上填充形成转移头的预设材料。本示例中凸起可采用PDMS材料，其可用于粘结芯片，且粘性要强临时基板上键合胶粘性，但弱于焊接后金属焊料的焊接力，且本实施例中的PDMS材料可选用UV固化型有机硅材料；UV固化型有机硅材料的热固化收缩率低，实际固化后的阵列结构与实际设计匹配性最佳，可进一步提升凸起的良品率。
S704：去除转移头模具，胶体晶体层保留在转移头上，从而得到转移装置。
为了便于进一步理解，本实施例下面结合图7所示的一种转移装置的具体制作过程为示例进行说明，参见图9所示，其包括但不限于：
S901：对模版基板主体15清洗后，在模版基板主体15上形成转移头图案。该转移头图案包括用于形成凸起的凹槽151。
S902：至少在转移头图案的凹槽的底部涂覆微球混合液141。
S903：在易挥发溶剂挥发后，胶体晶体微球通过重力自组装形成胶体晶体层14。
S904：在转移头图案上填充预设材料并固化处理得到转移头。
在本实施例中，在转移头图案上填充预设材料后，该预设材料的一部分填充于各胶体晶体微球之间的空隙内。参见图9所示，填充的预设材料包括用于形成承载基板的基板材料121和用于形成凸起的凸起材料131。
S905：在填充的预设材料上贴合支撑基板11，并对预设材料固化处理得到转移头。
S906：去除转移头模具，胶体晶体层14保留在转移头上，从而得到转移装置。
通过以上方法制得的转移装置，在转移装置的凸起上形成有胶体晶体层，基于胶体晶体微球结构的布拉格反射作用可以呈现不同光颜色的特性，因此可基于各凸起上的胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，实现凸起式转移头上是否出现异常凸起的检测，避免出现异常凸起的转移头被继续使用而造成的各种问题。在本实施例中，在制得转移装置后，可利用该转移装置进行待转移芯片的拾取转移后，再对该转移装置的转移头进行检测。
又一可选实施例：
为了便于理解，本实施例提供了另一种示例的转移装置的制作方法，用于制作如上所示的转移装置。本实施例中，可以在制得转移头后，再在转移头的凸起上形成胶体晶体层。该制作过程参见图10-1所示，其包括但不限于：
S1001：制作好转移头。
在一种示例中，制作转移头的方式可以采用但不限于上述图9所示的方式，区别在于省略S902和S903。
S1003：在转移头的凸起上形成胶体晶体层。
例如，一种示例中，在凸起上形成胶体晶体层的过程参见图11所示，其可包括但不限于：
S1101：将胶体晶体微球混合于易挥发溶剂中得到微球混合液。
本步骤可采用但不限于上述S801所示的步骤，在此不再赘述。
S1102：至少在凸起与待转移芯片相贴合的一面上涂覆微球混合液。通过易挥发溶剂的挥发，胶体晶体微球通过重力自组装形成胶体晶体层。
在凸起上涂覆微球混合液的区域可根据需求灵活选择，例如可参考图2、图4-图6中所示的胶体晶体层，在转移头上的对应区域涂覆微球混合液，在此不再赘述。
在本实施例的一些示例中，在上述S1001制作好转移头后，在凸起上形成胶体晶体层之前，还可包括：
利用制作好的转移头进行待转移芯片的转移，这样可以直接在使用后的转移头上制作胶体晶体层，并利用胶体晶体层的布拉格反射作用反射出的光来确定凸起是否异常，实现凸起式转移头上是否出现异常凸起的检测。
为了便于进一步理解，本实施例下面结合图10-1所示的一种转移装置的具体制作过程为示例进行说明，参见图10-2所示，其包括但不限于：
S1002：在制作好的转移头的凸起13上涂覆微球混合液141。
S1004：在易挥发溶剂挥发后，胶体晶体微球通过重力自组装在凸起13上形成胶体晶体层14。
另一可选实施例：
本实施例提供了一种检测上述各实施例所示的转移装置的检测方法，参见图12所示，其包括但不限于：
S1201：将转移装置置于预设光环境下，转移装置的凸起上所设置的胶体晶体层朝向（也即面向）光入射方向，以供光射入该胶体晶体层。
在本实施例中，S1201中的预设光环境可以为预设自然光环境，也可为预设光源照射环境；只要满足射入凸起上的胶体晶体层的光满足检测条件即可。
S1202：检测凸起上的胶体晶体层反射出的光，根据检测结果确定该凸起是否异常。
为了便于理解，本是示例下面对用布拉格反射原理进行说明，请参见以下布拉格公式（即以下公式（1））所示：
Figure 262197dest_path_image001
………………………………（1）
上述公式（1）中，k为系数， D为胶体晶体微球的粒径， n为胶体晶体微球的折射率，θ为光入射角，因此，当胶体晶体微球的材质选定后，其折射率n就能确定，对于未出现异常的凸起，在预设光环境下可获取其正常的光入射角θ；然后可以选定预设标准颜色从而确定其波长。例如，选择蓝色时，则可确定蓝色的波长λ；然后将以上参数代入上述公式（1），即可得到晶体微球的粒径D的值。进而在形成胶体晶体层时，则可采用上述确定的胶体晶体微球的材质和粒径形成胶体晶体层。这样当转移头在同样的检测环境下，对于转移头上未发生异常的凸起，从凸起上的胶体晶体层反射出的光的颜色与预设标准颜色相同或差异在预设的标准范围内；而出现异常的异常凸起上的胶体晶体层反射出的光的颜色则与预设标准颜色相同，或不在预设的标准范围内。
因此，在本实施例的一种示例中，S1202中检测凸起上的胶体晶体层反射出的光，根据检测结果确定凸起是否异常可包括：
观测凸起上的胶体晶体层反射出的光的实际颜色，根据观测到的实际颜色和预设标准颜色的差异，确定凸起是否异常。本实施例中的观测可以是直接人工通过视觉进行可视观测，检测方式简单有效。
例如，在一种示例中，以胶体晶体微球为Sio2微球为例，其n是定值，对应选用的Sio2微球的粒径在173纳米至190纳米之间，此时胶体晶体层反射出的光呈现出的波长是420纳米至460纳米的波段，会呈现蓝色。因此，在一些示例中，可以选用粒径在173纳米至190纳米之间的Sio2微球形成胶体晶体层，设定预设标准颜色为蓝色，则可通过观测凸起上的胶体晶体层反射出的光的实际颜色是否为蓝色，如否，则可确定凸起是否异常。
参见图13所示，为了便于理解，本实施例下面结合图13所示的混合能带结构示意图对其进行验证。
图13中，B所示区域表示的是面心立方结构的胶体晶体模板在Γ-L 区域的不完全带隙，并根据公式: λ = α/ω 计算所对应的波长范围，其中λ是指波长，α是指胶体晶体的归一化常数，ω是胶体晶体的归一化频率。通过软件仿真模拟可知：以189nm 面心立方结构的 SiO2 胶体晶体为例，其归一化频率范围是 0.62 至 0.66。通过计算，反射波长范围是 436 纳米至465纳米，而蓝光的波长457纳米在其理论反射范围以内，因此从理论计算以及模型模拟双方面能够验证本实施例中的上述检测方式可行且准确。
基于上述原理，经检测，针对具体的单一蓝光波长，选定Sio2微球的粒径为189nm，表现出来的是457nm的蓝色波长；因此在一些示例中，可以选用粒径为189nm为Sio2微球形成胶体晶体层，预设标准颜色为蓝色。应当理解的时，在上述原理基础上，可以通过灵活的调整胶体晶体微球的材质和粒径中的至少一种，来对应调整预设标准颜色，并不限于上述示例的Sio2材质以及粒径和蓝色波长的对应关系。
在本实施例的又一示例中，上述S1202中检测凸起上的胶体晶体层反射出的光，根据检测结果确定凸起是否异常还可包括：
获取凸起上的胶体晶体层反射出的光的实际波长λ1；
根据λ1，通过以下公式（2）计算出凸起的实际光入射角θ1；
Figure 329510dest_path_image002
……………………………（2）
上述公式（2）中，k为系数，D为胶体晶体微球的粒径，n为胶体晶体微球的折射率。
根据实际光入射角θ1和预设的标准光入射角θ 0的差异，确定凸起是否异常。本实施例中的标准光入射角θ 0为凸起未发生异常时在上述检测环境下的得到的光的入射角。因此根据实际光入射角θ1和预设的标准光入射角θ 0的差异，可以确定对应凸起是够被挤压变形、缺失或产生倾斜等情况；且根据二者之间的具体差值还可确定表征出对应凸起发生的变形量。
可见，通过本实施例提供的检测方法，当转移头上的凸起受压发生变形后，由于不能恢复，根据布拉格公式，由于其变形导致其实际光入射角度发生变化，也即公式（1）中的θ变化，在D跟n确定的情况下，λ发生变化，所以导致胶体晶体层反射出的光的颜色发生变化，从而能够表现出来颜色差异；且在一些示例中，凸起在不同挤压情况下，其上的胶体晶体层反射出的光的颜色不同，通过统计还可进一步根据相应的光颜色确定出具体的挤压情况，例如不同变形量各自对应的颜色等；从而在检测时，可直观的根据各凸起上的胶体晶体层反射出的光的颜色来判断凸起的使用状态；测试简单，效率高，成本低，且准确率高。
为了便于理解，下面结合图14-1至图14-4所示为示例进行说明。
参见图14-1至图14-2所示，在图14-1所示的状态中，转移头上的各凸起13都处于正常状态，则在预设光环境下，凸起上的胶体晶体层的反射光区域51都为蓝色。
参见图14-3所示，将图14-1中的转移装置使用一段时间后，其中的凸起C1、凸起C2和凸起C3产生了异常，凸起C4为正常凸起。在相同的检测环境下，参见图14-4所示，凸起C1、凸起C2和凸起C3对应的反射光区域则不再为蓝色，因此根据凸起对应的反射光区域的颜色就可直观的确定该凸起是否在使用过程中变为异常凸起。
本实施例还提供了一种检测如上各实施例所示的转移装置的检测装置，参见图15所示，其包括但不限于：
光检测设备61，用于在转移装置置于预设光环境下，且凸起与所述待转移芯片相贴合的一面朝向光入射方向时，检测凸起上的胶体晶体层反射出的光，根据检测结果确定凸起是否异常。其中检测过程可参见但不限于上述示例，在此不再赘述。
在本实施例的另一些示例中，检测装置还可包括将待检测的转移装置输送到预设光环境下的输送装置，或产生相应光源的光源装置等。
参见图15所示，在本实施例的一些示例中，光检测设备61可包括但不限于：
波长采集设备611，用于采集凸起上的胶体晶体层反射出的光的实际波长λ1；波长采集设备611可以为但不限于光谱仪；
分析设备612，用于根据λ1，通过以上公式（2）计算出凸起的实际光入射角θ1，并根据实际光入射角θ1和预设的标准光入射角θ 0的差异，确定凸起是否异常。
又一可选实施例：
本实施例还提供了一种显示屏，包括框架和显示面板；显示面板固定在框架上；显示面板包括显示背板，以及设置于显示背板上的若干微型发光芯片，其中该若干微型发光芯片通过上述各实施例中的转移装置转移至显示背板上，从而使得显示背板上的微型发光芯片键合后一致性更好，进而可提升显示屏的显示效果。该显示屏可应用于但不限于各种智能移动终端，车载终端、PC、显示器、电子广告板等。
本实施例还提供了一种拼接显示屏，包括该拼接显示屏可通过至少两个如上所示的显示屏拼接而成，由于显示屏的微型发光芯片键合后一致性更好，因此可进一步保证拼接后的显示屏之间的微型发光芯片键合后的一致性，提升视觉效果。
应当理解的是，本申请的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本申请所附权利要求的保护范围。

Claims (19)

  1. 一种转移装置，包括：转移头和设于所述转移头上的胶体晶体层，其中，所述转移头包括：
    基板，设于所述基板背面上的至少一个凸起，所述凸起用于与待转移芯片贴合粘接以拾取转移所述待转移芯片；
    所述胶体晶体层形成于所述凸起上，将所述凸起与所述待转移芯片相贴合的一面至少部分覆盖，所述胶体晶体层包括有序排列的胶体晶体微球。
  2. 如权利要求1所述的转移装置，其中，所述胶体晶体微球为纳米级胶体晶体微球，所述胶体晶体微球的粒径大于等于173纳米，小于等于190纳米。
  3. 如权利要求2所述的转移装置，其中，所述胶体晶体微球的粒径为189纳米。
  4. 如权利要求1所述的转移装置，其中，所述胶体晶体微球包括二氧化硅微球和聚合物材质微球中的至少一种。
  5. 如权利要求1所述的转移装置，其中，所述胶体晶体层将所述凸起与所述待转移芯片相贴合的一面全部覆盖。
  6. 如权利要求1所述的转移装置，其中，所述胶体晶体层还包括填充于各所述胶体晶体微球之间的空隙内，用于形成所述凸起的预设材料。
  7. 一种转移装置制作方法，用于制作如权利要求1所述的转移装置，包括：
    制作转移头模具，所述转移头模具包括模版基板主体，在所述模版基板主体上形成的转移头图案，所述转移头图案包括形成所述凸起的凹槽；
    至少在所述凹槽的底部形成所述胶体晶体层；
    在所述转移头图案上填充预设材料并固化处理得到所述转移头；
    去除所述转移头模具，所述胶体晶体层保留在所述转移头上。
  8. 如权利要求7所述的转移装置制作方法，其中，所述至少在所述凹槽的底部形成所述胶体晶体层包括：
    将胶体晶体微球混合于易挥发溶剂中得到微球混合液；
    至少在所述凹槽的底部涂覆所述微球混合液，通过所述易挥发溶剂的挥发，所述胶体晶体微球通过重力自组装形成所述胶体晶体层。
  9. 如权利要求8所述的转移装置制作方法，其中，所述预设材料包括聚二甲基硅氧烷，所述易挥发溶剂为油项溶剂。
  10. 一种转移装置制作方法，用于制作如权利要求1所述的转移装置，包括：
    制作好所述转移头；
    在所述凸起上形成所述胶体晶体层。
  11. 如权利要求10所述的转移装置制作方法，其中，所述在所述凸起上形成所述胶体晶体层包括：
    将胶体晶体微球混合于易挥发溶剂中得到微球混合液；
    至少在所述凸起与所述待转移芯片相贴合的一面上涂覆所述微球混合液，通过所述易挥发溶剂的挥发，所述胶体晶体微球通过重力自组装形成所述胶体晶体层。
  12. 如权利要求10所述的转移装置制作方法，其中，所述制作好所述转移头后，在所述凸起上形成所述胶体晶体层之前，还包括：
    利用制作好的所述转移头进行待转移芯片的转移。
  13. 一种如权利要求1所述的转移装置的检测方法，包括：
    将所述转移装置置于预设光环境下，所述凸起上的所述胶体晶体层朝向光入射方向；
    检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常。
  14. 如权利要求13所述的转移装置的检测方法，其中，所述预设光环境为预设自然光环境，或预设光源照射环境。
  15. 如权利要求13所述的转移装置的检测方法，其中，所述检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常包括：
    观测所述凸起上的胶体晶体层反射出的光的实际颜色，根据所述实际颜色和预设标准颜色的差异，确定所述凸起是否异常。
  16. 如权利要求15所述的转移装置的检测方法，其中，所述胶体晶体微球的粒径大于等于173纳米，小于等于190纳米，所述预设标准颜色为蓝色。
  17. 如权利要求13所述的转移装置的检测方法，其中，所述检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常包括：
    获取所述凸起上的胶体晶体层反射出的光的实际波长λ1；
    根据所述λ1，通过以下公式计算出所述凸起的实际光入射角θ1；
    Figure 239590dest_path_image001
    ，所述k为系数，所述D为所述胶体晶体微球的粒径，所述n为所述胶体晶体微球的折射率；
    根据所述实际光入射角θ1和预设的标准光入射角θ 0的差异，确定所述凸起是否异常。
  18. 一种检测如权利要求1所述的转移装置的检测装置，包括：
    光检测设备，用于在所述转移装置置于预设光环境下，且所述凸起上的所述胶体晶体层朝向光入射方向时，检测所述凸起上的胶体晶体层反射出的光，根据检测结果确定所述凸起是否异常。
  19. 如权利要求18所述的转移装置的检测装置，其中，所述光检测设备包括：
    波长采集设备，用于采集所述凸起上的胶体晶体层反射出的光的实际波长λ1；
    分析设备，用于根据所述λ1，通过以下公式计算出所述凸起的实际光入射角θ1，并根据所述实际光入射角θ1和预设的标准光入射角θ 0的差异，确定所述凸起是否异常；
    Figure 563255dest_path_image001
    ，所述k为系数，所述D为所述胶体晶体微球的粒径，所述n为所述胶体晶体微球的折射率。
     
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