WO2022249873A1 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Definitions
- the present disclosure relates to a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having a structure in which a plurality of columnar semiconductor layers are embedded with a p-type embedded semiconductor layer, and a method for manufacturing the semiconductor light emitting device.
- Patent Document 1 An n-type nanowire core, an active layer and a p-type layer are grown on a growth substrate, a tunnel junction layer is formed on the side surface of the p-type layer, and an n-type buried A semiconductor light emitting device embedded with a semiconductor layer has been proposed.
- the active layer In the semiconductor light emitting device in which the active layer is formed on the outer periphery of the nanowire core disclosed in Patent Document 1, crystal defects and threading dislocations are less than those in which the active layer is formed on the entire surface of the growth substrate, and high-quality crystals are obtained. In addition, since m-plane growth is possible, the external quantum efficiency can be improved at high current densities. In addition, in the semiconductor light-emitting device using the nanowire core of Patent Document 1, the active layer can be formed of high-quality crystals, so it is expected to increase the In composition of the active layer to increase the wavelength. Also, by forming a tunnel junction layer around the nanowire and embedding the nanowire with an n-type embedded semiconductor layer, current diffusion in the embedded semiconductor layer and good carrier injection from the tunnel junction layer to the p-type layer can be achieved. be able to.
- the p-type layer and the tunnel junction layer are formed as part of the columnar semiconductor including the nanowires, and the p+ layer included in the p-type layer and the tunnel junction layer is the n-type semiconductor layer. Embedded inside. Therefore, there is a problem that it is difficult to remove the hydrogen atoms contained inside the p-type layer and the p+ layer in the manufacturing process to activate the p-type impurity and increase the carrier concentration. If the carrier concentrations in the p-type layer and the p+ layer are low, it becomes difficult to inject carriers into the p-type layer, making it difficult to increase the current density of the semiconductor light emitting device to increase the amount of light.
- the present disclosure has been made in view of the above-described conventional problems. It is an object of the present invention to provide a semiconductor light-emitting device and a method for manufacturing a semiconductor light-emitting device capable of performing
- the semiconductor light emitting device of the present disclosure includes: a growth substrate; a plurality of columnar semiconductor layers formed on the growth substrate; a p-type buried semiconductor layer covering a layer, a tunnel junction layer formed on the buried semiconductor layer, and an n-type semiconductor layer formed on the tunnel junction layer, the buried semiconductor layer; A mesa structure is formed in the tunnel junction layer and the n-type semiconductor layer, and the tunnel junction layer is formed extending to the side surface of the mesa structure.
- the tunnel junction layer is formed on the p-type buried semiconductor layer, and the tunnel junction layer is formed extending to the side surface of the mesa structure. Hydrogen can be desorbed through the buried semiconductor layer and the tunnel junction layer exposed to the side surface of the structure, and the activation rate of the p-type impurity contained in the p+ layer of the buried semiconductor layer and the tunnel junction layer is increased. current diffusion and carrier injection can be performed.
- the tunnel junction layer has a stacked structure of n+ layers and p+ layers, and a groove is formed from the surface of the mesa structure to reach at least the p+ layer.
- the trench is formed to reach the embedded semiconductor layer.
- the groove is formed to reach the growth substrate side from the top surface of the columnar semiconductor layer.
- the groove is formed in a region avoiding the columnar semiconductor in plan view.
- the grooves are formed in a dot shape or a linear shape.
- a method for manufacturing a semiconductor light emitting device includes a first growth step of forming a plurality of columnar semiconductor layers and p-type buried semiconductor layers on a growth substrate; a second growth step of forming a tunnel junction layer and an n-type semiconductor layer on a layer; and forming a mesa structure in the buried semiconductor layer, the tunnel junction layer and the n-type semiconductor layer to form the tunnel junction layer. It is characterized by comprising a mesa forming step of exposing from the side surface of the mesa structure, and an activating step of activating the p+ layer included in the tunnel junction layer after the mesa forming step.
- a trench etching step is performed to form a trench reaching at least the p+ layer from the surface of the mesa structure by etching.
- a mask is formed on a portion of the embedded semiconductor layer, and the tunnel junction layer and the n-type semiconductor layer are grown by selective growth using the mask. and after the second growing step and before the activating step, a groove portion mask removing step of removing the mask to form a groove portion is provided.
- a semiconductor light emitting device and a semiconductor light emitting device capable of increasing the activation rate of the p-type impurity contained in the p-type layer and the p+ layer contained in the tunnel junction layer and performing good current diffusion and carrier injection A manufacturing method can be provided.
- FIG. 1 is a schematic diagram showing a semiconductor light emitting device 10 according to a first embodiment
- FIG. 2A and 2B are partial enlarged views schematically showing structural examples of a groove portion 19 formed in the semiconductor light emitting device 10, FIG.
- An example of forming up to the semiconductor layer 15 is shown
- FIG. 2C shows an example of forming up to the nanowire layer 13 .
- 3(a) is a mask formation step
- FIG. 3(b) is a nanowire growth step
- FIG. 3(c) is an active layer.
- the growth step, (d) of FIG. 3 shows the embedded semiconductor layer growth step.
- 4A is a second growth step
- FIG. 4B is a mesa formation step
- FIG. 4 shows an electrode forming process.
- 5(a) is a mask formation step
- FIG. 5(b) is a second growth step
- FIG. 5(c) is a 5(d) shows a mesa formation process and an activation process
- FIG. 5(e) shows an electrode formation process.
- It is a plan view schematically showing the formation pattern of the groove portion 19 in the third embodiment
- FIG. 6 (a) is a round dot shape
- FIG. 6 (b) is a polygonal dot shape
- FIG. 6(d) shows a high-density arrangement of linear shapes.
- FIG. 7A is a plan view schematically showing a formation pattern of grooves 19 and nanowire layers 13 in the fourth embodiment
- FIG. 7A is an example in which round dot-shaped grooves 19 are arranged between columnar semiconductors; 7(b) is an example in which linear grooves 19 are arranged along the direction connecting the electrodes, and FIG. 7(c) is an example in which linear grooves 19 are arranged in a direction crossing the electrodes. be.
- FIG. 1 is a schematic diagram showing a semiconductor light emitting device 10 according to the first embodiment.
- a semiconductor light emitting device 10 includes a growth substrate 11, a mask 12, a nanowire layer 13, an active layer 14, a buried semiconductor layer 15, a tunnel junction layer 16, and an n-type semiconductor layer 17. , a mesa groove 18 , a groove portion 19 , a cathode electrode 20 and an anode electrode 21 .
- the nanowire layer 13 and the active layer 14 are selectively grown in a direction perpendicular to the growth substrate 11 to have a columnar shape, and constitute a columnar semiconductor layer in the present disclosure.
- part of the semiconductor light emitting device 10 has the embedded semiconductor layer 15 removed from the surface to the growth substrate 11 to form a mesa groove 18 (mesa structure), and the surface of the growth substrate 11 is exposed. and the cathode electrode 20 is formed. An anode electrode 21 is formed on the n-type semiconductor layer 17 .
- the mesa structure refers to a structure in which a groove is formed through a plurality of semiconductor layers so as to surround a predetermined region, so that the laminated structure cross section of each semiconductor layer is exposed from the side surface.
- the growth substrate 11 is a substantially flat member made of a material capable of crystal growth of a semiconductor material, and a mask 12 is formed on the main surface side. A part of the growth substrate 11 is exposed and a cathode electrode 20 is formed.
- the semiconductor light-emitting device 10 is made of a nitride-based semiconductor, it is preferable to use a GaN substrate as the growth substrate 11.
- a c-plane GaN substrate is used because the cavity plane can be easily formed by cleavage.
- a heterosubstrate such as a c-plane sapphire substrate or a Si substrate made of a material different from the semiconductor material grown as the growth substrate 11 is used, and a plurality of semiconductor layers such as a buffer layer and a base layer are grown thereon.
- a buffer layer is a layer formed between a single crystal substrate and an underlying layer to alleviate lattice mismatch between the two.
- GaN is preferably used for the buffer layer, but AlN, AlGaN, or the like may also be used.
- the underlying layer is a single-crystal semiconductor layer formed on the growth substrate 11 and the buffer layer.
- Non-doped GaN is formed with a thickness of several ⁇ m, and an n-type semiconductor layer such as an n-type contact layer is formed thereon. It is preferable to configure with a plurality of layers provided.
- the n-type contact layer is a semiconductor layer doped with n-type impurities, such as Si-doped n-type Al 0.05 GaN 0.95 .
- the mask 12 is a layer made of a dielectric material formed on the surface of the growth substrate 11 or the underlying layer.
- a material that is difficult to grow a semiconductor crystal from is selected from the mask 12.
- SiO 2 , SiN x and Al 2 O 3 are suitable.
- a plurality of openings, which will be described later, are formed in the mask 12, and the semiconductor layer can be grown from the surface of the growth substrate 11 or the underlying layer partially exposed through the openings.
- the columnar semiconductor layer is a semiconductor layer crystal-grown in the opening provided in the mask 12 , and the substantially columnar semiconductor layer is formed vertically with respect to the main surface of the growth substrate 11 .
- Such a columnar semiconductor layer can be obtained by setting appropriate growth conditions according to the semiconductor material to be formed, and performing selective growth in which a specific crystal plane orientation is grown.
- the columnar semiconductor layers are also formed two-dimensionally and periodically on the growth substrate 11 .
- the nanowire layer 13 is a columnar semiconductor layer selectively grown on the growth substrate 11 exposed from the opening of the mask 12 or on the underlying layer, and is made of GaN doped with n-type impurities, for example.
- GaN GaN
- the nanowire layer 13 selectively grown on the growth substrate 11 has a substantially hexagonal prism shape with six m-planes formed as facets. In FIG. 1, it seems that the nanowire layer 13 is grown only in the region where the opening is formed. A hexagonal prism is formed.
- the opening is formed as a circle with a diameter of about 150 nm
- GaN GaInN may be used as the nanowire layer 13 for this purpose.
- AlGaN AlGaN as the nanowire layer 13, or to change the well layer and the barrier layer of the active layer 14 to AlGaN having different compositions. be.
- the active layer 14 is a semiconductor layer grown on the outer periphery of the nanowire layer 13.
- a multi-quantum well active layer in which a GaInN quantum well layer with a thickness of 5 nm and a GaN barrier layer with a thickness of 10 nm are stacked five times.
- a multiple quantum well active layer is mentioned here, a single quantum well structure or a bulk active layer may be used. Since the active layer 14 is formed on the side and top surfaces of the nanowire layer 13, the area of the active layer 14 can be secured. The higher the ratio of In taken into the active layer, the longer the emission wavelength of the semiconductor light emitting device 10. By setting the In composition ratio to 0.10 or more, the emission wavelength can be 480 nm or more.
- the emission wavelength can be set to 500 nm or more.
- the active layer 14 formed on the side surfaces is also a non-polar surface having m-planes, which can improve droop characteristics.
- the buried semiconductor layer 15 is a semiconductor layer grown on the outer periphery of the active layer 14, and is made of GaN doped with p-type impurities, for example.
- a buried semiconductor layer 15 is formed so as to cover the side and top surfaces of the active layer 14 and extend to the growth substrate 11 or underlying layer.
- the nanowire layer 13, the active layer 14, and the buried semiconductor layer 15 constitute a double heterostructure, and carriers can be well confined in the active layer 14 to improve the probability of radiative recombination.
- FIG. 1 shows an example in which the embedded semiconductor layer 15 is composed of a single layer. It may be a structure.
- the tunnel junction layer 16 is a semiconductor layer formed on the buried semiconductor layer 15, and includes, for example, a p+ layer 16p (not shown in FIG. 1) that is doped with a p-type impurity at a high concentration and is in contact with the buried semiconductor layer 15. , and an n+ layer 16n (not shown in FIG. 1) doped with an n-type impurity at a high concentration and formed on the p+ layer 16p are grown in order to form a two-layer structure.
- the p+ layer 16p is a semiconductor layer heavily doped with p-type impurities, and can be made of GaN with a thickness of 5 nm and a Mg concentration of 2 ⁇ 10 20 cm ⁇ 3 , for example.
- n+ layer 16n for example, GaN with a thickness of 10 nm and a Si concentration of 2 ⁇ 10 20 cm ⁇ 3 can be used.
- the two layers, the p+ layer 16p and the n+ layer 16n, constitute the tunnel junction layer 16 in this disclosure, since the p+ layer and the n+ layer form a tunnel junction.
- the n-type semiconductor layer 17 is an n-type semiconductor layer formed on the tunnel junction layer 16, and an anode electrode 21 is formed on part of the surface.
- the n-type semiconductor layer 17 may be composed of a single layer or a laminated structure of multiple layers. Also, the material forming the n-type semiconductor layer 17 is not limited, and for example, n-type GaN, n-type AlGaN, or the like can be used. Since the anode electrode 21 is formed on the n-type semiconductor layer 17 , it is preferable to form a contact layer having a high concentration of n-type impurities on the outermost surface of the n-type semiconductor layer 17 .
- the mesa groove 18 is a groove formed through each semiconductor layer from the n-type semiconductor layer 17 to the growth substrate 11 or underlying layer, and divides the light emitting region of the semiconductor light emitting device 10 to form a mesa structure.
- the peripheries of the n-type semiconductor layer 17, tunnel junction layer 16 (n+ layer 16n, p+ layer 16p), and buried semiconductor layer 15 are exposed from the side surface of the mesa groove 18.
- FIG. Therefore, the tunnel junction layer 16 is formed extending to the side surfaces of the mesa structure defined by the mesa grooves 18 .
- each semiconductor layer to the side surface of the mesa structure means that the periphery of each semiconductor layer extends to the side surface of the mesa structure when the mesa groove 18 is formed.
- a passivation film or other structures formed in the mesa groove 18 are also included.
- An element isolation groove is further formed in the mesa groove 18 to separate the semiconductor light emitting elements 10 individually.
- the groove portion 19 is a groove formed from the surface of the mesa-structured n-type semiconductor layer 17 to reach at least the p+ layer 16p of the tunnel junction layer 16 .
- 2A and 2B are partial enlarged views schematically showing structural examples of the groove 19 formed in the semiconductor light emitting device 10.
- FIG. ) shows an example in which even the buried semiconductor layer 15 is formed
- FIG. 2C shows an example in which even the nanowire layer 13 is formed.
- the p+ layer 16p is exposed at the bottom and side portions of the trench 19. As shown in FIG. 2(a), since the exposed area of the p+ layer 16p in the trench 19 is large, the hydrogen atoms incorporated in the p+ layer 16p are easily released from the trench 19 in the activation step described later.
- the p+ layer 16p is exposed at the side of the groove 19, and the buried semiconductor layer 15 is formed in the groove. 19 are exposed on the bottom and sides.
- the hydrogen atoms incorporated in the p+ layer 16p in the activation process can be released from the groove 19.
- the embedded semiconductor layer 15 is exposed at the bottom and side portions of the trench 19 , the hydrogen atoms incorporated in the embedded semiconductor layer 15 in the activation process can be released from the trench 19 .
- the groove 19 may be formed deep from the top surface of the columnar semiconductor layer to the growth substrate 11 side and may be formed to reach a part of the nanowire layer 13 . Further, the groove portion 19 may be formed to be deeper than the top surface of the nanowire layer 13 at a position avoiding the nanowire layer 13 . In these structures, the p+ layer 16p and the buried semiconductor layer 15 are exposed at the side of the trench 19, and the hydrogen atoms taken in during the activation process can be released from the trench 19. FIG.
- the cathode electrode 20 is an electrode formed in the region where the growth substrate 11 or the underlying layer is exposed, and is composed of a laminated structure of a metal material and a pad electrode that make ohmic contact with the exposed semiconductor layer.
- the anode electrode 21 is an electrode formed on a portion of the n-type semiconductor layer 17, and is composed of a layered structure of a metal material that makes ohmic contact with the outermost surface of the n-type semiconductor layer 17 and a pad electrode.
- a known structure such as covering the surface of the semiconductor light emitting device 10 with a passivation film may be applied as necessary.
- a transparent electrode may be formed by extending the anode electrode 21 over the entire n-type semiconductor layer 17 .
- FIG. 3A and 3B are schematic diagrams showing the first growth step in the method for manufacturing the semiconductor light emitting device 10.
- FIG. 3A is the mask formation step
- FIG. 3B is the nanowire growth step
- FIG. ) shows the active layer growing step
- FIG. 3(d) shows the embedded semiconductor layer growing step.
- 4A and 4B are schematic diagrams showing a method for manufacturing the semiconductor light emitting device 10 according to the present embodiment, in which FIG. 4A shows the second growth step, FIG. c) shows the groove etching step and the activation step, and FIG. 4(d) shows the electrode forming step.
- a mask 12 made of SiO 2 is deposited on a growth substrate 11 made of n-type GaN by a sputtering method to a thickness of about 30 nm, and a fine pattern such as nanoimprinting lithography is applied.
- a forming method is used to form an opening 12a having a diameter of about 150 nm.
- a heterogeneous substrate such as sapphire
- a buffer layer, a base layer and an n-type semiconductor layer may be formed on the sapphire substrate and the surface of the n-type semiconductor layer may be used as the surface of the growth substrate 11. good.
- the growth conditions for the buffer layer are, for example, TMA (Trimethylaluminium), TMG (TrimethylGallium) and ammonia are used as material gases, the growth temperature is 1100° C., the V/III ratio is 1000, hydrogen is used as a carrier gas and the pressure is 10 hPa.
- the growth conditions for the underlying layer and the n-type semiconductor layer are, for example, a growth temperature of 1050° C., a V/III ratio of 1000, and a pressure of 500 hPa using hydrogen as a carrier gas.
- a nanowire layer 13 made of GaN is grown on the growth substrate 11 exposed from the opening 12a by selective growth by MOCVD.
- the growth conditions for the nanowire layer 13 are, for example, using TMG and ammonia as material gases, a growth temperature of 1050° C., a V/III ratio of 10, and a pressure of 100 hPa using hydrogen as a carrier gas.
- a GaInN quantum well layer with a thickness of 5 nm and a GaN barrier layer with a thickness of 10 nm are stacked five times on the side and top surfaces of the nanowire layer 13 using the MOCVD method.
- the active layer 14 is grown.
- the growth conditions for the active layer 14 are, for example, a growth temperature of 800° C., a V/III ratio of 3000, a pressure of 1000 hPa with nitrogen as a carrier gas, and TMG, TMI (Trimethylindium) and ammonia as source gases.
- the buried semiconductor layer 15 made of GaN doped with p-type impurities is grown, and the periphery of the columnar semiconductor layer composed of the nanowire layer 13 and the active layer 14 is grown. And the upper surface is buried with the buried semiconductor layer 15 .
- the embedded semiconductor layer 15 is grown under conditions of, for example, a growth temperature of 950° C., a V/III ratio of 1000, a pressure of 300 hPa using hydrogen as a carrier gas, and TMG, Cp 2 Mg (biscyclopentadienylmagnesium) and ammonia as source gases.
- the growth conditions of the buried semiconductor layer 15 are preferably conditions that promote c-plane growth, which is growth in the vertical direction.
- the embedded semiconductor layer 15 must be grown on the mask 12 provided between the columnar semiconductor layers, and there is a possibility that a gap will be formed under the columnar semiconductor layer when the embedded semiconductor layer 15 is grown. have a nature. Therefore, in the growth of the buried semiconductor layer 15, it is preferable to use TMG, silane, and ammonia as raw material gases and grow at a low temperature and a low V/III ratio that promote growth of the m-plane, which is lateral growth, in the initial stage.
- a low temperature and low V/III ratio is a V/III ratio of 100 or less at 800° C. or less and a pressure of 200 hPa using hydrogen as a carrier gas.
- the buried semiconductor layer 15 is grown at a high temperature and a high V/III ratio to promote the growth of the c-plane, which is the vertical growth. is preferred.
- a high temperature and high V/III ratio is a V/III ratio of 2000 or more at 1000° C. or more and a pressure of 500 hPa using hydrogen as a carrier gas. From the mask formation step of FIG. 3(a) to the embedded semiconductor layer growth step of FIG. 3(d), it corresponds to the first growth step in the present disclosure.
- the p+ layer 16p and the n+ layer 16n of the tunnel junction layer 16 and the n-type semiconductor layer 17 are grown on the embedded semiconductor layer 15.
- the growth conditions for the tunnel junction layer 16 are, for example, a growth temperature of 800° C., a V/III ratio of 3000, and a pressure of 500 hPa using nitrogen as a carrier gas.
- the p+ layer 16p may be GaN with a thickness of 5 nm and a Mg concentration of 2 ⁇ 10 20 cm ⁇ 3
- the n+ layer 16n may be GaN with a thickness of 10 nm and a Si concentration of 2 ⁇ 10 20 cm ⁇ 3 . be done.
- the tunnel junction layer 16 and the buried semiconductor layer 15 are partially removed from the n-type semiconductor layer 17 by selective dry etching, and the top surface of the growth substrate 11 is removed.
- a mesa groove 18 is formed by exposing. By forming the mesa groove 18 as described above, the area surrounded by the mesa groove 18 is defined as the light emitting area of the semiconductor light emitting device 10 .
- a groove portion 19 reaching from the n-type semiconductor layer 17 to at least the p+ layer 16p of the tunnel junction layer 16 is selectively formed by dry etching.
- an activation process is performed to desorb hydrogen from the buried semiconductor layer 15 and the p+ layer 16p that reach the side surfaces of the mesa structure and are exposed.
- hydrogen is released from the p+ layer 16p exposed in the trench 19 to accelerate the activation process.
- the activation treatment method is not limited, but one example is heat treatment (annealing) at 600° C. in an air atmosphere. Annealing in an air atmosphere is shown here, but heat treatment may be performed in an atmosphere in which atomic hydrogen that can activate the buried semiconductor layer 15 and the tunnel junction layer 16 does not exist.
- a cathode electrode 20 is formed on the surface of the growth substrate 11 and an anode electrode 21 is formed on the n-type semiconductor layer 17 . Further, if necessary, annealing after electrode formation, formation of a passivation film, and element division are performed to obtain the semiconductor light emitting element 10 .
- the semiconductor light emitting device 10 of this embodiment when a voltage is applied between the cathode electrode 20 and the anode electrode 21, the n-type semiconductor layer 17, the tunnel junction layer 16, the buried semiconductor layer 15, the active layer 14, the nanowire layer 13, A current flows through the growth substrate 11 and light is generated in the active layer 14 by radiative recombination. Light emitted from the active layer 14 is extracted to the outside of the semiconductor light emitting device 10 .
- the side surfaces of the nanowire layer 13 are m-planes formed by selective growth, the active layer 14 and the embedded semiconductor layer 15 formed on the outer periphery are also in contact with each other on the m-planes. Since the m-plane is a non-polar plane and does not cause polarization, the luminous efficiency in the active layer 14 is high, and since all the side surfaces of the hexagonal prism are m-planes, the luminous efficiency of the semiconductor light-emitting device 10 can be improved. Furthermore, since the film thickness of the active layer can be increased, the volume of the active layer 14 can be increased to about 3 to 10 times that of the conventional semiconductor light emitting device, and the injection carrier density can be reduced to reduce efficiency droop. can be significantly reduced.
- the tunnel junction layer 16 is formed extending to the side surface of the mesa structure, and the trench 19 is formed at least up to the p+ layer 16p. Therefore, hydrogen atoms can be released from the buried semiconductor layer 15 and the tunnel junction layer 16 exposed on the side surface of the mesa structure in the activation process, and the p-type impurity contained in the buried semiconductor layer 15 and the p+ layer 16p can be activated. It is possible to increase the conversion rate and perform good current diffusion and carrier injection.
- a groove portion etching step is performed to form the groove portion 19 by etching, and the groove portion 19 reaching at least the p+ layer 16p is formed.
- hydrogen atoms can be released from the p+ layer 16p exposed on the side surface of the trench 19 in the activation process, and the p+ layer can be removed not only in the vicinity of the outer periphery of the mesa structure but also in the inner region. It is possible to increase the activation rate of the p-type impurity contained in 16p and perform good current diffusion and carrier injection.
- FIG. 5A and 5B are schematic diagrams showing a method for manufacturing the semiconductor light emitting device 10 according to the present embodiment.
- FIG. 5A shows a mask forming step
- FIG. FIG. 5(d) shows a mesa formation process and an activation process
- FIG. 5(e) shows an electrode formation process.
- This embodiment differs from the first embodiment in that the second growth step is performed by selective growth using a mask after the first growth step shown in FIG.
- a mask 22 is formed on a portion of the embedded semiconductor layer 15 after the embedded semiconductor layer growth step shown in FIG. 3(d).
- a dielectric material is selected that makes crystal growth of the tunnel junction layer 16 difficult from above the mask 22.
- SiO 2 , SiN x and Al 2 O 3 are suitable.
- the region where the mask 22 is formed is the region where the groove 19 is formed.
- the p+ layer 16p and the n+ layer 16n of the tunnel junction layer 16 and the n-type semiconductor layer 17 are formed on the buried semiconductor layer 15 by selective growth using a mask 22. to grow. At this time, the p+ layer 16p and the n+ layer 16n of the tunnel junction layer 16 are not grown on the mask 22, and the mask 22 remains on the bottom of the trench 19.
- FIG. 5B shows that the p+ layer 16p and the n+ layer 16n of the tunnel junction layer 16 and the n-type semiconductor layer 17 are formed on the buried semiconductor layer 15 by selective growth using a mask 22. to grow. At this time, the p+ layer 16p and the n+ layer 16n of the tunnel junction layer 16 are not grown on the mask 22, and the mask 22 remains on the bottom of the trench 19.
- the mask 22 is removed by etching to form the groove portion 19 and expose the surface of the embedded semiconductor layer 15 at the bottom portion of the groove portion 19 .
- the p+ layer 16p of the tunnel junction layer 16 is exposed at the side portions of the groove portion 19.
- the mask 22 can be removed by wet etching that removes only the material of the mask 22 without etching the semiconductor material forming the n-type semiconductor layer 17 and the tunnel junction layer 16 .
- the tunnel junction layer 16 and the buried semiconductor layer 15 are partially removed from the n-type semiconductor layer 17 by selective dry etching, and the top surface of the growth substrate 11 is removed.
- a mesa groove 18 is formed by exposing.
- the area surrounded by the mesa groove 18 is defined as the light emitting area of the semiconductor light emitting device 10 .
- an activation process is performed to remove hydrogen from the buried semiconductor layer 15 and the p+ layer 16p that reach the side surfaces of the mesa structure and are exposed, thereby performing activation.
- hydrogen is released from the buried semiconductor layer 15 and the p+ layer 16p exposed in the trench 19 to accelerate the activation process.
- a cathode electrode 20 is formed on the surface of the growth substrate 11 and an anode electrode 21 is formed on the n-type semiconductor layer 17 . Further, if necessary, annealing after electrode formation, formation of a passivation film, and element division are performed to obtain the semiconductor light emitting element 10 .
- the groove 19 is formed in the second growth step of selective growth using the mask 22 and the mask removal step, and the groove 19 reaching at least the p+ layer 16p is formed.
- hydrogen atoms can be released from the p+ layer 16p exposed on the side surface of the trench 19 in the activation process, and the p+ layer can be removed not only in the vicinity of the outer periphery of the mesa structure but also in the inner region. It is possible to increase the activation rate of the p-type impurity contained in 16p and perform good current diffusion and carrier injection.
- FIG. 6A and 6B are plan views schematically showing formation patterns of the groove portions 19 in the present embodiment.
- FIG. 6A shows a round dot shape
- FIG. 6B shows a polygonal dot shape
- FIG. 6C shows a linear low-density arrangement
- FIG. 6D shows a linear high-density arrangement.
- the mesa structure defined by the mesa groove 18 is assumed to have a rectangular shape of 300 ⁇ m ⁇ 300 ⁇ m.
- the depth of the groove 19 may be any of the examples shown in FIGS. 2(a) to 2(c).
- grooves 19 are formed in circular dot shapes, cathode electrodes 20 and anode electrodes 21 are formed diagonally in 3 rows and 3 columns at intervals of 100 ⁇ m, and the remaining seven It is a pattern in which grooves 19 are arranged.
- the diameter of the grooves 19 is 20 ⁇ m
- the total area of the grooves 19 is about 2200 ⁇ m 2
- the area ratio of the grooves 19 to the chip area is about 2.44%.
- Another example is a pattern in which the cathode electrode 20 and the anode electrode 21 are formed diagonally in 4 rows and 4 columns at intervals of 50 ⁇ m, and the groove portions 19 are arranged in the remaining 14 locations.
- the diameter of the grooves 19 is 5 ⁇ m
- the total area of the grooves 19 is about 274 ⁇ m 2
- the area ratio of the grooves 19 to the chip area is about 0.73%.
- the grooves 19 are formed in a square dot shape, the cathode electrodes 20 and the anode electrodes 21 are formed at the diagonals of 3 rows and 3 columns at intervals of 100 ⁇ m, and the remaining seven It is a pattern in which grooves 19 are arranged.
- the total area of the grooves 19 is 2800 ⁇ m 2 , and the area ratio of the grooves 19 to the chip area is about 3.10%.
- Another example is a pattern in which the cathode electrode 20 and the anode electrode 21 are formed diagonally in 4 rows and 4 columns at intervals of 50 ⁇ m, and the groove portions 19 are arranged in the remaining 14 locations.
- the total area of the grooves 19 is about 350 ⁇ m 2
- the area ratio of the grooves 19 to the chip area is about 0.39%.
- the example shown in FIG. 6C is a pattern in which three grooves 19 are formed in stripes (lines) at intervals of 100 ⁇ m parallel to one side wall of the mesa structure.
- the width of the stripe is 5 ⁇ m
- the length of the central stripe is 250 ⁇ m
- the length of the other stripes is 150 ⁇ m
- the total area of the grooves 19 is 2750 ⁇ m 2
- the ratio is approximately 3.06%.
- the example shown in FIG. 6D is a pattern in which five grooves 19 are formed in a stripe (line) shape at intervals of 50 ⁇ m in parallel to one side wall of the mesa structure.
- the width of the stripe is 5 ⁇ m
- the length of the central stripe is 250 ⁇ m
- the length of the other stripes is 150 ⁇ m
- the total area of the grooves 19 is 4250 ⁇ m 2
- the ratio is about 4.72%.
- the area ratio of the trench 19 to the chip area is less than 5%, and the tunnel junction layer 16 fills 95% or more of the area.
- a good and uniform current can be injected into the semiconductor light emitting device 10.
- the interval between the adjacent grooves 19 is about 50 to 100 ⁇ m, the area of the p+ layer 16p capable of desorbing hydrogen from the grooves 19 can be secured, and the p+ layer 16p can be activated over the entire surface. Also, the time required for the activation process can be shortened.
- FIG. 7A and 7B are plan views schematically showing formation patterns of the grooves 19 and the nanowire layers 13 in this embodiment.
- FIG. 7A shows an example in which the round dot-shaped grooves 19 are arranged between the columnar semiconductors.
- FIG. 7B shows an example in which linear grooves 19 are arranged along the direction connecting the electrodes, and
- FIG. 7C shows an example in which linear grooves 19 are arranged in a direction crossing the electrodes. This is an example of
- grooves 19 are formed in regions avoiding the nanowire layer 13 in plan view.
- the depth for forming the groove 19 may be any of the examples shown in FIGS. 2A to 2C. Particularly, as shown in FIG. When forming the groove 19 to a position deeper than the top surface of the layer), it is preferable to employ these arrangements because the active layer 14 is not removed by the groove 19 .
- the grooves 19 are formed in the shape of round dots, and the grooves 19 are arranged in the center of the nanowire layers 13 (columnar semiconductor layers) arranged in a triangular lattice.
- the p+ layer 16p can be uniformly activated over substantially the entire chip region.
- the grooves 19 are linear, and the nanowire layers 13 are arranged in a triangular lattice along the direction connecting the anode electrode 21 and the cathode electrode 20.
- a groove portion 19 is arranged between 13 .
- the activation rate of the p+ layer 16p can be increased along the path of current flowing from the anode electrode 21 to the cathode electrode 20, and current injection can be further improved.
- the groove 19 is linear and arranged between the nanowire layers 13 parallel to one side wall of the mesa structure.
- the groove portion 19 can be formed from one side of the chip region to the other opposite side, the activation rate of the p+ layer 16p can be increased over substantially the entire chip region.
- FIGS. 6(c) and 6(d) and FIGS. 7(b) and 7(c) linear grooves 19 are shown, but curved grooves may be used.
- the groove portion 19 may be formed along the branch electrode.
- a semiconductor light-emitting device and a semiconductor light-emitting device capable of increasing the activation rate of p-type impurities contained in a p-type layer and a p+ layer contained in a tunnel junction layer and performing good current diffusion and carrier injection A device manufacturing method can be provided.
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Abstract
Description
以下、本開示の実施の形態について、図面を参照して詳細に説明する。各図面に示される同一または同等の構成要素、部材、処理には、同一の符号を付すものとし、適宜重複した説明は省略する。図1は、第1実施形態に係る半導体発光素子10を示す模式図である。
次に、本開示の第2実施形態について図5を用いて説明する。第1実施形態と重複する内容は説明を省略する。図5は、本実施形態に係る半導体発光素子10の製造方法を示す模式図であり、図5の(a)はマスク形成工程、図5の(b)は第2成長工程、図5の(c)は溝部マスク除去工程、図5の(d)はメサ形成工程と活性化工程、図5の(e)は電極形成工程を示している。本実施形態では、図3に示した第1成長工程の後に、マスクを用いた選択成長で第2成長工程を実施する点が第1実施形態と異なっている。
次に、本開示の第3実施形態について図6を用いて説明する。第1実施形態と重複する内容は説明を省略する。図6は、本実施形態における溝部19の形成パターンを模式的に示す平面図であり、図6の(a)は丸ドット形状、図6の(b)は多角形ドット形状、図6の(c)は線形状の低密度な配置、図6の(d)は線形状の高密度な配置を示している。
次に、本開示の第4実施形態について図7を用いて説明する。第1実施形態と重複する内容は説明を省略する。図7は、本実施形態における溝部19とナノワイヤ層13の形成パターンを模式的に示す平面図であり、図7の(a)は丸ドット形状の溝部19を柱状半導体の間に配置した例であり、図7の(b)は電極間を結ぶ方向に沿って線形状の溝部19を配置した例であり、図7の(c)は電極間を横断する方向に線形状の溝部19を配置した例である。
次に、本開示の第5実施形態について説明する。第1実施形態と重複する内容は説明を省略する。図6の(c)、(d)および図7の(b)、(c)では、線形状の溝部19として直線形状のものを示したが、曲線形状を用いてもよい。特に、アノード電極21の一部として電流拡散用の枝電極を分岐させている場合には、枝電極に沿って溝部19を形成してもよい。
11…成長基板
12…マスク
12a…開口部
13…ナノワイヤ層
14…活性層
15…埋込半導体層
16…トンネル接合層
17…n型半導体層
18…メサ溝
19…溝部
20…カソード電極
21…アノード電極
22…マスク
Claims (9)
- 成長基板と、前記成長基板上に形成された複数の柱状半導体層と、前記柱状半導体層の側面に接触して複数の前記柱状半導体層を覆うp型の埋込半導体層と、前記埋込半導体層上に形成されたトンネル接合層と、前記トンネル接合層上に形成されたn型半導体層とを備え、前記埋込半導体層、前記トンネル接合層および前記n型半導体層にはメサ構造が形成されており、前記トンネル接合層が前記メサ構造の側面まで延伸して形成されていることを特徴とする半導体発光素子。
- 前記トンネル接合層は、n+層とp+層の積層構造を有しており、前記メサ構造の表面から、少なくとも前記p+層にまで到達する溝部が形成されていることを特徴とする、請求項1に記載の半導体発光素子。
- 前記溝部は、前記埋込半導体層にまで到達して形成されていることを特徴とする、請求項2に記載の半導体発光素子。
- 前記溝部は、前記柱状半導体層の頂面より前記成長基板側にまで到達して形成されていることを特徴とする、請求項3に記載の半導体発光素子。
- 前記溝部は、平面視において前記柱状半導体を避けた領域に形成されていることを特徴とする、請求項1から4の何れか一項に記載の半導体発光素子。
- 前記溝部は、ドット形状または線形状に形成されていることを特徴とする、請求項1から5の何れか一項に記載の半導体発光素子。
- 成長基板上に複数の柱状半導体層およびp型の埋込半導体層を形成する第1成長工程と、前記埋込半導体層上に、トンネル接合層およびn型半導体層を形成する第2成長工程と、前記埋込半導体層、前記トンネル接合層および前記n型半導体層にメサ構造を形成して、前記トンネル接合層を前記メサ構造の側面から露出させるメサ形成工程と、前記メサ形成工程の後に、前記トンネル接合層に含まれるp+層を活性化する活性化工程とを備えることを特徴とする半導体発光素子の製造方法。
- 前記第2成長工程の後で、かつ前記活性化工程の前に、前記メサ構造の表面から少なくとも前記p+層にまで到達する溝部をエッチングで形成する溝部エッチング工程を備えることを特徴とする、請求項7に記載の半導体発光素子の製造方法。
- 前記第2成長工程では、前記埋込半導体層上の一部にマスクを形成し、前記マスクを用いた選択成長により前記トンネル接合層および前記n型半導体層を成長させ、前記第2成長工程の後で、かつ前記活性化工程の前に、前記マスクを除去して溝部を形成する溝部マスク除去工程を備えることを特徴とする、請求項7に記載の半導体発光素子の製造方法。
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JP2020504449A (ja) * | 2016-12-29 | 2020-02-06 | アルディア | 発光ダイオードを備えた光電子デバイス |
JP2020077817A (ja) * | 2018-11-09 | 2020-05-21 | 学校法人 名城大学 | 半導体発光素子 |
JP2021044329A (ja) * | 2019-09-10 | 2021-03-18 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
JP2021061272A (ja) * | 2019-10-03 | 2021-04-15 | 株式会社小糸製作所 | 半導体発光素子および半導体発光素子の製造方法 |
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JP2019012744A (ja) * | 2017-06-29 | 2019-01-24 | 学校法人 名城大学 | 半導体発光素子および半導体発光素子の製造方法 |
JP2020077817A (ja) * | 2018-11-09 | 2020-05-21 | 学校法人 名城大学 | 半導体発光素子 |
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