WO2022220450A1 - Dispositif à semi-conducteur ayant une tension de seuil régulée et son procédé de fabrication - Google Patents

Dispositif à semi-conducteur ayant une tension de seuil régulée et son procédé de fabrication Download PDF

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WO2022220450A1
WO2022220450A1 PCT/KR2022/004478 KR2022004478W WO2022220450A1 WO 2022220450 A1 WO2022220450 A1 WO 2022220450A1 KR 2022004478 W KR2022004478 W KR 2022004478W WO 2022220450 A1 WO2022220450 A1 WO 2022220450A1
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cobalt
titanium
metal gate
semiconductor device
content
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PCT/KR2022/004478
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Korean (ko)
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최창환
이주현
최문석
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한양대학교 산학협력단
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Definitions

  • the present invention relates to a semiconductor device with a controlled threshold voltage and a method for manufacturing the same, and more particularly, to a technical idea of controlling a work function of a metal gate by controlling the content of a metal gate material of the semiconductor device.
  • the metal gate has the advantage of being able to improve the high sheet resistance characteristic, which is a problem of the conventionally used polysilicon.
  • a pure metal having a high work function in order to apply the metal gate to a semiconductor device requiring a high work function, such as a PMOS transistor, a pure metal having a high work function must be used as the metal gate.
  • a pure metal having a high work function has difficulties in the etching process, There is a disadvantage that thermal stability may be poor, which may cause a diffusion problem into the gate insulating layer.
  • titanium nitride (TiN) used is the gate of the NMOS transistor and the PMOS transistor. It has a disadvantage in that it has an insufficient work function to be used as an electrode.
  • titanium nitride is a material having a mid-gap work function, and it is separately It is necessary to use the doping process of
  • An object of the present invention is to provide a semiconductor device having a metal gate having a work function required for a PMOS region by controlling the cobalt content in titanium-cobalt nitride (TiCoN), and a method for manufacturing the same.
  • TiCoN titanium-cobalt nitride
  • Another object of the present invention is to provide a semiconductor device capable of obtaining a low threshold voltage by applying a metal gate having a required work function to a PMOS region, and a method for manufacturing the same.
  • Another object of the present invention is to provide a semiconductor device capable of stably maintaining a work function corresponding to a PMOS region even after heat treatment, and a method for manufacturing the same.
  • Another object of the present invention is to provide a semiconductor device capable of securing excellent resistance characteristics (sheet resistance characteristics and resistivity characteristics) by providing a titanium-cobalt nitride-based metal gate with an optimized cobalt content, and a method for manufacturing the same.
  • a semiconductor device includes a substrate, a gate insulating layer formed on the substrate, and a metal gate formed on the gate insulating layer and including titanium-cobalt nitride (TiCoN), wherein the metal gate is titanium-cobalt.
  • TiCoN titanium-cobalt nitride
  • the work function may be adjusted according to the content of cobalt in the nitride.
  • the relative content of cobalt relative to titanium in titanium-cobalt nitride may be 0% ⁇ C Co /( Ti +Co) ⁇ 64%.
  • the titanium content (C Ti ) in the titanium-cobalt nitride is 13% ⁇ C Ti ⁇ 36%, and the cobalt content (C co ) may be 0% ⁇ C co ⁇ 23% .
  • the metal gate may have a work function of 4.8 eV to 5.3 eV.
  • the gate insulating layer is at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), and tantalum oxide (Ta 2 O 5 ) It may include a high-k dielectric material.
  • the gate insulating layer may be formed in a multi-layer structure of a first insulating layer corresponding to silicon oxide and a second insulating layer corresponding to at least one high-k material.
  • a method of manufacturing a semiconductor device includes forming a gate insulating film on a substrate and forming a metal gate including titanium-cobalt nitride (TiCoN) on the gate insulating film, wherein the metal
  • TiCoN titanium-cobalt nitride
  • the gate may have a work function adjusted according to the content of cobalt in the titanium-cobalt nitride.
  • the step of forming the metal gate is performed such that the relative content of cobalt relative to titanium (C Co /( Ti +Co) ) in titanium-cobalt nitride is 0% ⁇ C Co /( Ti +Co) ⁇ 64%.
  • a metal gate may be formed.
  • the titanium content (C Ti ) in the titanium-cobalt nitride becomes 13% ⁇ C Ti ⁇ 36%, and the cobalt content (C co ) is 0% ⁇ C co ⁇
  • a metal gate can be formed so as to be 23%.
  • the forming of the metal gate may control the content of cobalt in the titanium-cobalt nitride through atomic layer deposition (ALD).
  • ALD atomic layer deposition
  • the content of cobalt in the titanium-cobalt nitride may be controlled by adjusting the deposition ratio of the titanium nitride layer (TiN layer) and the cobalt layer (Co layer) through the atomic layer deposition method.
  • the step of forming the metal gate is to form a titanium nitride layer through an atomic layer deposition method based on a TiCl 4 precursor and NH 3 reaction gas, Co(MeCp) 2 Atomic layer based on the precursor and NH 3 reaction gas
  • a cobalt layer may be formed through a vapor deposition method.
  • the present invention may provide a semiconductor device including a metal gate having a work function required for a PMOS region by controlling the cobalt content in titanium-cobalt nitride (TiCoN).
  • a low threshold voltage can be obtained by applying a metal gate having a required work function to the PMOS region.
  • the present invention can stably maintain a work function corresponding to the PMOS region even after heat treatment.
  • the present invention can secure excellent resistance characteristics (sheet resistance characteristics and resistivity characteristics) by applying a titanium-cobalt nitride-based metal gate with an optimized cobalt content.
  • FIG. 1 is a view for explaining a semiconductor device according to an embodiment.
  • FIG. 2 is a view for explaining an example of controlling a composition ratio of a metal gate provided in a semiconductor device according to an embodiment.
  • FIG 3 is a view for explaining resistivity characteristics according to an increase in cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • FIG. 4 is a view for explaining capacitance characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • FIG. 5 is a diagram for explaining flat band voltage characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • FIG. 6 is a diagram for explaining effective work function characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • FIG. 7 is a view for explaining effective work function characteristics according to a cobalt content and a heat treatment temperature in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • FIGS. 8A to 8B are diagrams for explaining a TEM analysis result of a semiconductor device according to an exemplary embodiment.
  • FIG. 9 is a view for explaining a method of manufacturing a semiconductor device according to an exemplary embodiment.
  • an (eg, first) component When an (eg, first) component is referred to as being “(functionally or communicatively) connected” or “connected” to another (eg, second) component, that component is It may be directly connected to the element, or may be connected through another element (eg, a third element).
  • the expression “a device configured to” may mean that the device is “capable of” with other devices or components.
  • a processor configured (or configured to perform) A, B, and C refers to a dedicated processor (eg, an embedded processor) for performing the operations, or by executing one or more software programs stored in a memory device.
  • a dedicated processor eg, an embedded processor
  • a general-purpose processor eg, a CPU or an application processor
  • FIG. 1 is a view for explaining a semiconductor device according to an embodiment.
  • a semiconductor device 100 may include a metal gate having a work function required for a PMOS region by controlling the cobalt content in titanium-cobalt nitride (TiCoN).
  • TiCoN titanium-cobalt nitride
  • the semiconductor device 100 may obtain a low threshold voltage by applying a metal gate having a required work function to the PMOS region, and may stably maintain a work function corresponding to the PMOS region even after heat treatment.
  • the semiconductor device 100 includes a titanium-cobalt nitride-based metal gate with an optimized cobalt content, thereby securing excellent resistance characteristics (sheet resistance characteristics and resistivity characteristics).
  • the semiconductor device 100 may include a substrate 110 , a gate insulating layer 120 formed on the substrate 110 , and a metal gate 130 formed on the gate insulating layer 120 .
  • the semiconductor device 100 is a PMOS transistor
  • the substrate 110 includes an N-type well layer (N-well)
  • the gate insulating film 120 is formed in the center of the upper surface of the N-type well layer, and the gate insulating film ( A metal gate 130 may be formed on 130 .
  • the substrate 110 is silicon (silicon, Si), aluminum oxide (aluminum oxide, Al 2 O 3 ), magnesium oxide (magnesium oxide, MgO), silicon carbide (silicon carbide, SiC), silicon nitride (silicon nitride) , SiN), glass, quartz, sapphire, graphite, graphene, and polyimide (PI) may include at least one of, but preferably a substrate (100) may be a silicon substrate.
  • the gate insulating layer 120 may include at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), and tantalum oxide (Ta 2 O 5 ).
  • the gate insulating layer 120 may include hafnium oxide as a high-k material.
  • the gate insulating layer 120 when the gate insulating layer 120 includes a high-k material, it has an equivalent oxide thickness (EOT) electrically equal to that of silicon oxide and physically prevents tunneling while implementing a thick thin film. This is possible, and through this, the leakage current can be reduced.
  • EOT equivalent oxide thickness
  • the gate insulating layer 120 may be formed in a multilayer structure of a first insulating layer corresponding to silicon oxide and a second insulating layer corresponding to at least one high-k material.
  • the thickness of the first insulating layer may be reduced through a dry cleaning process using plasma.
  • a metal oxide film eg, HfO 2
  • PDA post-deposition annealing
  • the gate insulating layer 120 after forming the second insulating layer corresponding to the high-k material, activated fluorine through a dry cleaning process using plasma reacts with the first insulating layer corresponding to the silicon oxide Through this, the thickness of the first insulating layer can be reduced to obtain the effect of increasing the capacitance and reducing the leakage current.
  • the gate insulating layer 120 is activated using NH 4 F and HF as intermediate oxides.
  • fluorine (F) is formed, and fluorine diffuses through the first insulating layer (ie, HfO 2 layer) and reacts with the second insulating layer (ie, SiO 2 layer) to form highly volatile SiFx.
  • the decomposed oxygen is diffused into the first insulating layer to compensate for the oxygen deficiency, so that the thickness of the second insulating layer may be reduced and the film quality of the first insulating layer may be improved.
  • the metal gate 130 includes titanium-cobalt nitride (TiCoN), and the work function may be adjusted according to the content of cobalt in the titanium-cobalt nitride.
  • TiCoN titanium-cobalt nitride
  • the metal gate 130 may have a higher work function and a lower sheet resistance as the content of cobalt in the titanium-cobalt nitride increases.
  • the metal gate 130 includes titanium-cobalt nitride, but by optimizing the titanium content in the titanium-cobalt nitride, the sheet resistance of the TiAlN, TaAlN and TaSiN thin films provided in the metal gate of the existing PMOS transistor. This high problem can be solved.
  • the metal gate 130 is atomic layer deposition (ALD), vacuum deposition (vacuum deposition), chemical vapor deposition (chemical vapor deposition), physical vapor deposition (physical vapor deposition), sputtering (sputtering) And it may be formed through at least one method of spin coating (spincoating).
  • ALD atomic layer deposition
  • vacuum deposition vacuum deposition
  • chemical vapor deposition chemical vapor deposition
  • physical vapor deposition physical vapor deposition
  • sputtering sputtering
  • spincoating spin coating
  • the content of titanium, cobalt, and nitrogen in the titanium-cobalt nitride may be controlled through an atomic layer deposition method.
  • the work function of the metal gate 130 may be controlled by controlling the composition of titanium, cobalt, and nitrogen in the titanium-cobalt nitride using the atomic layer deposition method.
  • the cobalt content of the metal gate 130 may be controlled to have a work function of 4.8 eV to 5.3 eV through an atomic layer deposition method.
  • the metal gate 130 may have a work function of 5.1 eV suitable for a PMOS transistor.
  • the titanium content (C Ti ) in the titanium-cobalt nitride is 13% ⁇ C Ti ⁇ 36%
  • the cobalt content (C co ) is 0% ⁇ C co ⁇ 23%
  • the relative content of cobalt relative to titanium in the titanium-cobalt nitride may be 0% ⁇ C Co /( Ti +Co) ⁇ 64%.
  • the relative content of cobalt (C Co /( Ti +Co) ) may be 47% ⁇ C Co /( Ti +Co) ⁇ 64%.
  • the relative content of cobalt may mean the number of atoms of Co to the sum of the number of atoms of titanium and the number of atoms of cobalt (Ti + Co).
  • FIG. 2 is a view for explaining an example of controlling a composition ratio of a metal gate provided in a semiconductor device according to an embodiment.
  • reference numeral 200 denotes a titanium-cobalt nitride (TiCoN) based metal gate by controlling a deposition subcycle ratio (ie, deposition ratio) in a deposition process using an atomic layer deposition method, so that the relative content of cobalt in the gate.
  • a deposition subcycle ratio ie, deposition ratio
  • C Co /( Ti +Co) An example of controlling (C Co /( Ti +Co) ) is shown.
  • the titanium-cobalt nitride-based metal gate of the semiconductor device may be formed by alternately depositing a titanium nitride layer (TiN layer) and a cobalt layer (Co layer) using an atomic layer deposition method.
  • the content of cobalt in titanium-cobalt nitride (C Co ) can be adjusted in the range of 0% ⁇ C co ⁇ 23% by adjusting the deposition ratio (subcycle ratio), and the relative content of cobalt (C Co / ( Ti + Co) ) may be adjusted in the range of 0% ⁇ C Co/(Ti+Co) ⁇ 64%.
  • FIG 3 is a view for explaining resistivity characteristics according to an increase in cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • reference numeral 300 denotes a change in resistivity according to a change in the relative content of cobalt (C Co / ( Ti +Co) ) in a titanium-cobalt nitride (TiCoN)-based metal gate.
  • the cobalt content in the titanium-cobalt nitride based metal gate increases, and the content of titanium and nitrogen may decrease, in which case the cobalt content is As it increases, it can be seen that the resistivity of the titanium-cobalt nitride-based metal gate decreases.
  • FIG. 4 is a view for explaining capacitance characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • reference numeral 400 denotes a titanium-cobalt nitride (TiCoN) based metal gate with a relative content of cobalt (C Co / ( Ti +Co ) ) and a capacitance according to a change in the gate voltage. ) shows the change in characteristics.
  • the change in capacitance characteristic shown at reference numeral 400 is a silicon oxide (SiO 2 ) and hafnium oxide (HfO 2 ) on a substrate on a gate insulating film formed in a multilayered titanium-cobalt nitride-based metal gate electrode by depositing a metal gate electrode, and a metal gate electrode After tungsten was deposited on the tungsten, both ends of the substrate and the tungsten were connected and measured.
  • the titanium-cobalt nitride-based metal gate has little difference in the oxide capacitance (Co x ) value according to the change in the relative content of cobalt (C Co /( Ti +Co) ). have.
  • titanium-cobalt nitride-based metal gate can prevent unintentional change in equivalent oxide thickness (EOT) due to oxygen scavenging that occurs in the conventional Al-added electrodes such as TiAlN and TaAlN. it means.
  • EOT equivalent oxide thickness
  • FIG. 5 is a diagram for explaining flat band voltage characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • reference numeral 500 denotes a titanium-cobalt nitride (TiCoN) based metal gate with a relative content of cobalt (C Co / ( Ti +Co ) ) according to a change in flatband voltage (V FB ) Shows the change in characteristics.
  • TiCoN titanium-cobalt nitride
  • V FB flatband voltage
  • the change in the flat band voltage characteristic shown at reference numeral 500 is a silicon oxide (SiO 2 ) and hafnium oxide (HfO 2 ) on a substrate on a gate insulating film formed in a multilayered titanium-cobalt nitride-based metal gate electrode by depositing a metal gate electrode, After tungsten was deposited on the gate electrode, both ends of the substrate and the tungsten were connected and measured.
  • the flat band voltage is relatively positively shifted as the content of cobalt in the titanium-cobalt nitride-based metal gate increases.
  • Titanium-cobalt nitride according to an embodiment
  • the base metal gate can realize a flat band voltage shift of about 160 mV just by adjusting the cobalt content to 47% or more.
  • FIG. 6 is a diagram for explaining effective work function characteristics according to a cobalt content in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • reference numeral 600 denotes an effective work function according to a change in the relative content of cobalt (C Co / ( Ti +Co) ) in a titanium-cobalt nitride (TiCoN)-based metal gate. The results confirmed through the V FB -EOT plot method are shown.
  • silicon oxide (SiO 2 ) and hafnium oxide (HfO 2 ) When the same titanium-cobalt nitride based metal gate is used on two gate insulating layers, the relative content of cobalt (C Co / ( Ti + Co) ), it can be seen that the effective work function increases at a similar rate with little difference.
  • the titanium-cobalt nitride-based metal gate has a work function suitable for a PMOS transistor stably in both oxides.
  • FIG. 7 is a view for explaining effective work function characteristics according to a cobalt content and a heat treatment temperature in a metal gate provided in a semiconductor device according to an exemplary embodiment.
  • reference numeral 700 denotes a transistor device having a titanium-cobalt nitride (TiCoN)-based metal gate in a forming gas (H 2 5% + N 2 ) atmosphere for about 30 minutes at 400° C. and It shows effective work function characteristics when heat treated at a temperature of 500°C.
  • TiCoN titanium-cobalt nitride
  • the effective work function of the titanium-cobalt nitride-based metal gate decreases as the heat treatment temperature increases.
  • FIGS. 8A to 8B are diagrams for explaining a TEM analysis result of a semiconductor device according to an exemplary embodiment.
  • reference numeral 810 denotes a titanium-cobalt nitride (TiCoN)-based metal gate having a relative content of cobalt (C Co/(Ti+Co) ) of 47%, and then heat treatment is not performed.
  • a TEM (transmission electron microscope) image of a semiconductor device that has not been used is shown, and reference numeral 820 denotes a metal gate formed in the same manner as that of reference numeral 810, followed by heat treatment at a temperature of 500° C. for about 30 minutes in a forming gas atmosphere.
  • TEM of a semiconductor device show the image.
  • 'Si' denotes a substrate
  • 'HfO 2 ' denotes a gate insulating layer
  • 'TiCoN' denotes a metal gate
  • W denotes a low resistance material and a capping layer.
  • the titanium-cobalt nitride-based metal gate according to the embodiment can secure excellent thermal stability while having overall low sheet resistance, specific resistance, and high work function.
  • the titanium-cobalt nitride-based metal gate according to an embodiment can be applied to a metal gate in the PMOS region of a CMOS device requiring a high work function, and is used for all semiconductor devices requiring a high work function in addition to the CMOS device. It can also be applied to the gate.
  • the titanium-cobalt nitride-based metal gate according to an embodiment is applied to replace titanium nitride (TiN) and tantalum nitride (TaN), which are currently used as barrier metals, to lower specific resistance. can be used for
  • the titanium-cobalt nitride-based metal gate may be used in various devices requiring low resistivity in addition to the gate material.
  • FIG. 9 is a view for explaining a method of manufacturing a semiconductor device according to an exemplary embodiment.
  • FIG. 9 is a view for explaining a method of manufacturing a semiconductor device according to an exemplary embodiment described with reference to FIGS. 1 to 8B .
  • the contents described with reference to FIG. 9 below the contents described with reference to FIGS. 1 to 8B .
  • a description that overlaps with will be omitted.
  • a gate insulating layer may be formed on a substrate.
  • the substrate is silicon (silicon, Si), aluminum oxide (aluminum oxide, Al 2 O 3 ), magnesium oxide (magnesium oxide, MgO), silicon carbide (silicon carbide, SiC), silicon nitride (silicon nitride, SiN) , may include at least one of glass, quartz, sapphire, graphite, graphene, and polyimide (PI), but preferably the substrate is a silicon substrate can be
  • the gate insulating layer has a high dielectric constant of at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), and tantalum oxide (Ta 2 O 5 ). It may include a high-k dielectric material, but is not limited thereto, and may include various high-k dielectric materials in addition to the above-described materials.
  • the gate insulating layer may include hafnium oxide as a high-k material.
  • a metal gate including titanium-cobalt nitride may be formed on the gate insulating layer, wherein the metal gate according to the embodiment is titanium-cobalt nitride (TiCoN).
  • the work function may be adjusted according to the content of the cobalt material in the cobalt nitride.
  • the metal gate may have a higher work function and a lower sheet resistance as the content of cobalt in the titanium-cobalt nitride increases.
  • the method of manufacturing a semiconductor device may include atomic layer deposition (ALD), vacuum deposition, chemical vapor deposition, and physical vapor deposition.
  • the metal gate may be formed through at least one of vapor deposition, sputtering, and spin coating.
  • the content of titanium, cobalt, and nitrogen in the titanium-cobalt nitride may be controlled through an atomic layer deposition method.
  • step 920 the method of manufacturing a semiconductor device according to an embodiment adjusts the deposition ratio of a titanium nitride layer (TiN layer) and a cobalt layer (Co layer) through an atomic layer deposition method, thereby titanium-cobalt material in cobalt nitride. content can be controlled.
  • TiN layer titanium nitride layer
  • Co layer cobalt layer
  • a titanium nitride layer is formed through an atomic layer deposition method based on a TiCl 4 precursor and an NH 3 reaction gas, and a Co(MeCp) 2 precursor and an NH 3 reaction gas are formed.
  • a cobalt layer can be formed through an atomic layer deposition method based on
  • the content (C Ti ) of the titanium material in the titanium-cobalt nitride becomes 13% ⁇ C Ti ⁇ 36%, and the content of the cobalt material (C A metal gate may be formed such that co ) is 0% ⁇ C co ⁇ 23%.
  • the relative content (C Co /( Ti +Co) ) of the cobalt material relative to the titanium material in the titanium-cobalt nitride is 0% ⁇ C Co/(Ti+)
  • a metal gate may be formed such that Co) ⁇ 64%.
  • the method of manufacturing a semiconductor device according to an embodiment is such that the relative content of the cobalt material (C Co /( Ti +Co) ) is 47% ⁇ C Co /( Ti +Co) ⁇ 64%
  • a metal gate may be formed.
  • the present invention it is possible to provide a semiconductor device having a metal gate having a work function required for the PMOS region by controlling the cobalt content in the titanium-cobalt nitride (TiCoN).
  • a low threshold voltage can be obtained by applying a metal gate having a required work function to the PMOS region, and the work function corresponding to the PMOS region can be stably maintained even after heat treatment.

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Abstract

La présente invention concerne un dispositif à semi-conducteur ayant une tension de seuil régulée et son procédé de fabrication. Le dispositif à semi-conducteur selon un mode de réalisation peut comprendre : un substrat ; une couche d'isolation de grille formée sur le substrat ; et une grille métallique formée sur la couche d'isolation de grille et comprenant du nitrure de titane-cobalt (TiCoN), la grille métallique ayant une fonction de travail qui est commandée en fonction de la teneur en cobalt dans le nitrure de titane-cobalt.
PCT/KR2022/004478 2021-04-15 2022-03-30 Dispositif à semi-conducteur ayant une tension de seuil régulée et son procédé de fabrication WO2022220450A1 (fr)

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KR20150092542A (ko) * 2014-02-05 2015-08-13 에스케이하이닉스 주식회사 트랜지스터의 문턱전압조절을 위한 방법 및 게이트구조물
KR20180060983A (ko) * 2016-11-28 2018-06-07 에이에스엠 아이피 홀딩 비.브이. 토폴로지상 제한된 플라즈마-강화 순환 증착의 방법
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KR20150092542A (ko) * 2014-02-05 2015-08-13 에스케이하이닉스 주식회사 트랜지스터의 문턱전압조절을 위한 방법 및 게이트구조물
KR20180060983A (ko) * 2016-11-28 2018-06-07 에이에스엠 아이피 홀딩 비.브이. 토폴로지상 제한된 플라즈마-강화 순환 증착의 방법
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