WO2022220235A1 - 電解コンデンサおよびその製造方法 - Google Patents
電解コンデンサおよびその製造方法 Download PDFInfo
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- WO2022220235A1 WO2022220235A1 PCT/JP2022/017574 JP2022017574W WO2022220235A1 WO 2022220235 A1 WO2022220235 A1 WO 2022220235A1 JP 2022017574 W JP2022017574 W JP 2022017574W WO 2022220235 A1 WO2022220235 A1 WO 2022220235A1
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- solid electrolyte
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- electrolytic capacitor
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Definitions
- the present invention relates to an electrolytic capacitor and its manufacturing method.
- An electrolytic capacitor has a capacitor element, and the capacitor element includes an anode body, a dielectric layer covering the anode body, and a solid electrolyte layer covering the dielectric layer.
- the solid electrolyte layer contains a conductive polymer, and polypyrrole, for example, is used as the conductive polymer (eg, Patent Document 1).
- ESR equivalent series resistance
- One aspect of the present invention includes an anode body, a dielectric layer covering the anode body, a first solid electrolyte layer covering the dielectric layer, and a second solid electrolyte layer covering the first solid electrolyte layer.
- the first solid electrolyte layer includes a first conductive polymer having a polythiophene basic skeleton
- the second solid electrolyte layer includes a second conductive polymer having a polypyrrole basic skeleton
- the first It relates to an electrolytic capacitor, wherein the conductivity of the solid electrolyte layer is 2 S/cm or less.
- Another aspect of the present invention includes a first step of preparing an anode body having a dielectric layer formed thereon, and a first solid electrolyte containing a first conductive polymer having a polythiophene as a basic skeleton on the dielectric layer. a second step of forming a layer; and electropolymerizing a precursor of a second conductive polymer having polypyrrole as a basic skeleton on the first solid electrolyte layer to form a second conductive polymer containing the second conductive polymer. and a third step of forming a solid electrolyte layer, wherein the electrical conductivity of the first solid electrolyte layer is 2 S/cm or less.
- the ESR of electrolytic capacitors can be reduced.
- FIG. 1 is a cross-sectional view schematically showing an electrolytic capacitor according to one embodiment of the present invention
- FIG. FIG. 2 is an enlarged cross-sectional view schematically showing a region II in FIG. 1;
- an electrolytic capacitor according to the present disclosure will be described below with examples, but the present disclosure is not limited to the examples described below.
- specific numerical values and materials may be exemplified, but other numerical values and materials may be applied as long as the effects of the present disclosure can be obtained.
- the description "numerical value A to numerical value B" includes numerical value A and numerical value B, and can be read as “numerical value A or more and numerical value B or less”.
- any of the illustrated lower limits and any of the illustrated upper limits can be arbitrarily combined as long as the lower limit is not greater than or equal to the upper limit. .
- a plurality of materials are exemplified, one of them may be selected and used alone, or two or more may be used in combination.
- the present disclosure encompasses a combination of matters described in two or more claims arbitrarily selected from the multiple claims described in the attached claims. In other words, as long as there is no technical contradiction, the matters described in two or more claims arbitrarily selected from the multiple claims described in the attached claims can be combined.
- Electrolytic capacitor may be read as “solid electrolytic capacitor”
- capacitor may be read as “capacitor”.
- An electrolytic capacitor comprises an anode body, a dielectric layer covering the anode body, a first solid electrolyte layer covering the dielectric layer, a second solid electrolyte layer covering the first solid electrolyte layer, Prepare.
- the first solid electrolyte layer (hereinafter also referred to as the first layer) contains a first conductive polymer (hereinafter also referred to as a polythiophene-based polymer) having a polythiophene as a basic skeleton, and has a flow rate of 2 S/cm or less. It has electrical conductivity.
- the second solid electrolyte layer (hereinafter also referred to as the second layer) contains a second conductive polymer (hereinafter also referred to as a polypyrrole-based polymer) having polypyrrole as a basic skeleton.
- the second layer containing a polypyrrole-based polymer is formed by forming a conductive first layer on the dielectric layer formed on the surface of the anode body, and then electrolytically polymerizing a precursor of the polypyrrole-based polymer on the first layer. formed by letting The first layer functions as an electrode during electropolymerization. A good second layer is formed by electropolymerization.
- the present inventors have made extensive studies on the first layer. As a result, when the first layer contains the polythiophene-based polymer and has a conductivity of 2 S/cm or less, the ESR of the electrolytic capacitor provided with the second layer containing the polypyrrole-based polymer is reduced. newly found.
- an electrolytic capacitor with a second layer containing a polypyrrole-based polymer has a specifically low ESR. Although the detailed reason is unknown, the following points are presumed to be factors for the low ESR.
- Crystalization and cracks that occur in part of the dielectric layer can cause a short circuit and allow a high current to flow.
- a part of the conductive polymer is insulated by a high current to suppress a short circuit.
- the insulation increases the resistance of the solid electrolyte layer and raises the ESR.
- the conductivity of the first layer is as small as 2 S/cm or less, so that it is easily insulated, and the insulation of the first layer suppresses the insulation of the second layer.
- the first layer is used as an electrode during electrolytic polymerization, it is formed sufficiently thinner than the second layer. By locally insulating the first layer with a small thickness, the influence of the insulating on the entire solid electrolyte layer can be reduced. Therefore, the resistance of the second layer can be kept low, and an increase in ESR is suppressed.
- the deterioration of the first layer is likely to affect the ESR.
- the first layer is composed of a polythiophene-based polymer film having excellent thermal stability and durability, an increase in ESR due to deterioration of the first layer is suppressed.
- polypyrrole-based polymer film formed by electrolytic polymerization is compared with the case where the first layer is a polypyrrole-based polymer film formed by chemical polymerization or a polyaniline-based polymer film.
- the difference in energy level (work function) between the system polymer film (second layer) is small. This is also presumed to be one of the factors for the low ESR.
- the conductivity of the first layer is preferably 0.1 S/cm or more and 2 S/cm or less, more preferably 0.1 S/cm or more and 1 S/cm or less, and still more preferably. is 0.1 S/cm or more and 0.5 S/cm or less.
- the conductivity of the first layer is 0.1 S/cm or more, the decrease in capacity is easily suppressed.
- the conductivity of the first layer can be obtained by the following method.
- the electrolytic capacitor is disassembled, the capacitor element is taken out, and the components of the first layer are analyzed.
- the first treatment liquid may be analyzed.
- TEM transmission electron microscope
- ELS electron energy loss spectroscopy
- NMR nuclear magnetic resonance spectroscopy
- Raman spectroscopy and the like can be used.
- a sample film (for example, thickness 20 ⁇ m to 40 ⁇ m) containing the same components as the first layer is formed, and the conductivity of the sample film is obtained as the conductivity of the first layer.
- the sample film can be formed by preparing a sample solution (aqueous solution) containing the same component as the first layer (for example, self-doping polythiophene-based polymer), applying the sample solution to the substrate, and drying it. .
- a sample film may be formed using the first treatment liquid. Loresta GX and PSP probes manufactured by Nitto Seiko Analyticc Co., Ltd. can be used as conductivity measuring devices.
- the first layer has low conductivity. However, by forming the first layer thin, an increase in ESR can be suppressed. From the viewpoint of reducing ESR, the thickness T1 of the first layer is preferably 10 nm or less, more preferably 5 nm or less. The lower limit of the thickness T1 of the first layer is, for example, 1 nm.
- the thickness T1 of the first layer means the thickness (thickness T1 in FIG. 2) of the first layer covering the inner wall surface of the porous portion of the anode body through the dielectric layer.
- the thickness of the first layer can be obtained by the following method. First, the electrolytic capacitor is disassembled, the capacitor element is taken out, and a cross-sectional image of the capacitor element is obtained using a transmission electron microscope (TEM). Using the image, the thickness of the first layer covering the inner wall surface of the porous portion is measured at arbitrary 10 points. An average value of the measured values of the thickness is calculated.
- the first layer and the second layer can be confirmed by, for example, TEM-EDX (energy dispersive X-ray spectroscopy) analysis (elemental mapping).
- the second layer has a larger thickness and a higher electrical conductivity than the first layer.
- the conductivity of the second layer may be 30 S/cm or higher, or 60 S/cm or higher.
- the conductivity of the second layer may be 300 S/cm or less, or 150 S/cm or less.
- the conductivity of the second layer may be in a range in which the above upper and lower limits are arbitrarily combined, for example, 30 S / cm or more and 300 S / cm or less, cm or less, or 30 S/cm or more and 150 S/cm or less.
- the thickness T2 of the second layer may be 50 nm or more, or may be 50 nm or more and 100 nm or less.
- the ratio of the thickness T2 of the second layer to the thickness T1 of the first layer: T2/T1 may be 10 or more.
- the thickness T2 of the second layer refers to the thickness of the second layer (thickness T2 ).
- the thickness of the second layer can be obtained by the same method as for the thickness of the first layer.
- the conductivity of the second layer can be obtained by the same method as for the first layer. Based on the analysis results, a sample film (for example, 20 ⁇ m to 40 ⁇ m thick) containing the same components as the second layer is formed, and the conductivity of the sample film is obtained as the conductivity of the second layer.
- a sample film for example, 20 ⁇ m to 40 ⁇ m thick
- the second layer is formed by electrolytically polymerizing a polypyrrole polymer precursor in the presence of a second dopant. Therefore, a sample film having the same components (polypyrrole-based polymer and second dopant) as the second layer was obtained by preparing a sample solution containing a polypyrrole-based polymer precursor and a second dopant, and immersing a metal substrate in the sample solution. , can be formed by applying an electric current to the metal substrate and electropolymerizing the precursor. Further, when the second layer is formed using the second treatment liquid in the third step described later, the second treatment liquid may be analyzed, and the sample film may be formed using the second treatment liquid. .
- the electrolytic capacitor and its manufacturing method will be described in more detail below.
- the anode body can contain a valve action metal, an alloy containing a valve action metal, a compound containing a valve action metal, and the like. These materials may be used singly or in combination of two or more. For example, aluminum, tantalum, niobium, and titanium are preferably used as valve metals.
- the anode body may have a porous portion on its surface. Such an anode body can be obtained, for example, by roughening the surface of a base material (such as a foil-like or plate-like base material) containing a valve metal by etching or the like.
- the anode body may be a molded body of particles containing a valve metal or a sintered body thereof. Since the sintered body has a porous structure, the entire anode body can be the porous portion.
- the dielectric layer is formed, for example, by chemically converting (anodizing) an anode body containing a valve action metal.
- the dielectric layer may be formed so as to cover at least part of the anode body.
- a dielectric layer is usually formed on the surface of the anode body.
- the dielectric layer is formed on the surface of the porous portion of the anode body, along the outer surface of the porous portion and the inner wall surfaces of the holes (pits).
- the dielectric layer contains an oxide of a valve metal.
- the dielectric layer contains Ta 2 O 5 when tantalum is used as the valve metal, and the dielectric layer contains Al 2 O 3 when aluminum is used as the valve metal.
- the dielectric layer is not limited to this, and may be any material as long as it functions as a dielectric.
- a solid electrolyte layer is formed to cover the dielectric layer.
- the solid electrolyte layer does not necessarily need to cover the entire dielectric layer (entire surface), and may be formed to cover at least a portion of the dielectric layer.
- the solid electrolyte layer includes a first layer containing polythiophene-based polymer and a second layer containing polypyrrole-based polymer formed on the first layer. If there is a region on the dielectric layer where the first layer is not formed, the second layer may be formed on the dielectric layer in this region.
- the first layer contains a polythiophene-based polymer.
- Polythiophene-based polymers include polythiophene and derivatives thereof. Examples of polythiophene-based polymers include poly(3,4-ethylenedioxythiophene) (PEDOT).
- the weight average molecular weight of the polythiophene-based polymer may be 100,000 or less, or 30,000 or less, from the viewpoint of facilitating impregnation into the pores of the porous portion.
- the weight-average molecular weight of the polythiophene-based polymer is, for example, 1,000 or more.
- the weight average molecular weight is the polystyrene-based weight average molecular weight measured by gel permeation chromatography (GPC).
- the first layer may contain a self-doping polythiophene-based polymer having a conductivity of 2 S/cm or less. Particles of the self-doping polythiophene polymer tend to be small. Therefore, in this case, it is easy to prepare a polythiophene-based polymer dispersion or a polythiophene-based polymer solution as the first treatment liquid. In addition, it is easy to impregnate the pores of the porous portion with a dispersion (solution) of the polythiophene-based polymer.
- the self-doping polythiophene-based polymer refers to a conductive polymer having an anionic group directly or indirectly bound to the polythiophene skeleton of the conductive polymer by covalent bonding. Since the anionic group of the conductive polymer itself functions as a dopant for the conductive polymer, it is called a self-doping type.
- Anionic groups include, for example, acidic groups (acid form) or their conjugated anionic groups (salt form).
- anionic groups possessed by polythiophene-based polymers include sulfonic acid groups, carboxyl groups, phosphoric acid groups, phosphonic acid groups, and salts thereof (salts with inorganic bases, salts with organic bases, etc.).
- the polythiophene-based polymer may have one type of anionic group, or may have two or more types of anionic groups.
- the anionic group is preferably a sulfonic acid group or a salt thereof, and may be a combination of a sulfonic acid group or a salt thereof and an anionic group other than a sulfonic acid group or a salt thereof.
- the amount of anionic groups contained in the polythiophene-based polymer is, for example, preferably 1 to 3, preferably 1 or 2 (especially 1) per molecule corresponding to the main skeleton of the polythiophene-based polymer. More preferred.
- the first layer may contain a non-self-doped polythiophene-based polymer and may contain a first dopant.
- the first layer may include a polythiophene-based polymer composite of a polythiophene-based polymer and a first dopant, having a conductivity of 2 S/cm or less.
- the first dopant may be contained in the form of an anion or in the form of a salt.
- Non-self-doping polythiophene-based polymers include, for example, anionic groups (specifically, sulfonic acid groups, carboxyl groups, phosphorus acid groups, phosphonic acid groups, and salts thereof).
- the first dopant for example, a dopant capable of forming a polyanion is used.
- the first dopant include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyacrylsulfonic acid, polymethacrylsulfonic acid, and the like.
- the first layer may contain a conductive polymer other than the polythiophene-based polymer, it is preferable that the content of the polythiophene-based polymer is large.
- the ratio of the polythiophene-based polymer to the entire conductive polymer contained in the first layer is, for example, 90% by mass or more, and may be 100% by mass.
- the first layer may be a single layer or may be composed of multiple layers.
- the polythiophene-based polymer contained in each layer may be the same or different.
- the first layer may further contain other components within a range that does not impair the effects of the present invention.
- the second layer contains a polypyrrole-based polymer.
- Polypyrrole-based polymers include polypyrrole and derivatives thereof.
- the weight average molecular weight of the polypyrrole-based polymer is not particularly limited, but is, for example, 1,000 or more and 1,000,000 or less.
- the second layer may contain a non-self-doping polypyrrole-based polymer and may contain a second dopant.
- a non-self-doping polypyrrole-based polymer for example, an anionic group (specifically, a sulfonic acid group, a carboxy group , phosphate groups, phosphonate groups, and salts thereof).
- a dopant capable of forming an anion for example, a dopant capable of forming an anion is used.
- second dopants include sulfuric acid, nitric acid, phosphoric acid, boric acid, organic sulfonic acids, and the like.
- organic sulfonic acids include aromatic sulfonic acids.
- Aromatic sulfonic acids include benzenesulfonic acid, alkylbenzenesulfonic acid, naphthalenesulfonic acid, and alkylnaphthalenesulfonic acid.
- the second dopant may form a polypyrrole-based polymer composite with the polypyrrole-based polymer.
- the second dopant may be contained in the form of an anion or in the form of a salt.
- the second layer may contain a conductive polymer other than polypyrrole-based polymer, it is preferable that the content of polypyrrole-based polymer is large.
- the ratio of the polypyrrole-based polymer to the entire conductive polymer contained in the second layer is, for example, 90% by mass or more, and may be 100% by mass.
- the second layer may be a single layer or may be composed of multiple layers.
- the polypyrrole-based polymer contained in each layer may be the same or different.
- the second layer may further contain other components within a range that does not impair the effects of the present invention.
- FIG. 1 is a cross-sectional view schematically showing the structure of an electrolytic capacitor according to one embodiment of the present invention.
- FIG. 2 is an enlarged cross-sectional view schematically showing region II in FIG.
- the electrolytic capacitor 1 includes a capacitor element 2 , a resin sealing material (armor) 3 that seals the capacitor element 2 , and an anode terminal 4 and a cathode terminal that are at least partially exposed to the outside of the resin sealing material 3 . 5 and .
- the anode terminal 4 and the cathode terminal 5 can be made of, for example, metal (copper or copper alloy, etc.).
- the resin encapsulant 3 has a substantially rectangular parallelepiped outer shape, and the electrolytic capacitor 1 also has a substantially rectangular parallelepiped outer shape. Epoxy resin, for example, can be used as the material of the resin sealing material 3 .
- Capacitor element 2 includes anode body 6 , dielectric layer 7 covering anode body 6 , and cathode portion 8 covering dielectric layer 7 .
- the cathode section 8 includes a solid electrolyte layer 9 covering the dielectric layer 7 and a cathode extraction layer 10 covering the solid electrolyte layer 9 .
- Cathode extraction layer 10 has carbon layer 11 and silver paste layer 12 .
- the anode body 6 has a porous portion 6a and includes a region facing the cathode portion 8 and a region not facing the cathode portion 8.
- the porous portion 6a includes a large number of holes P. As shown in FIG.
- the holes P may be sponge-like pits or tunnel-like pits.
- An insulating separation layer 13 is formed so as to cover the surface of the anode body 6 in a strip shape in a portion adjacent to the cathode part 8 in the region of the anode body 6 not facing the cathode part 8 , so that the cathode part 8 and the anode are separated from each other. Contact with the body 6 is restricted.
- the other portion of the region of anode body 6 that does not face cathode portion 8 is electrically connected to anode terminal 4 by welding.
- the cathode terminal 5 is electrically connected to the cathode section 8 via an adhesive layer 14 made of a conductive adhesive.
- the main surfaces 4S and 5S of the anode terminal 4 and the cathode terminal 5 are exposed from the same surface of the resin sealing material 3. This exposed surface is used for solder connection with a board (not shown) on which the electrolytic capacitor 1 is to be mounted.
- the carbon layer 11 only needs to be conductive, and can be configured using a conductive carbon material (such as graphite), for example.
- a conductive carbon material such as graphite
- a composition containing silver powder and a binder resin such as an epoxy resin
- the configuration of the cathode extraction layer 10 is not limited to this, and may be any configuration having a current collecting function.
- the solid electrolyte layer 9 is formed so as to cover the dielectric layer 7 .
- Dielectric layer 7 is formed along the surface of anode body 6 (outer surface S of porous portion 6a and inner wall surfaces of holes P).
- the surface of dielectric layer 7 has an uneven shape corresponding to the shape of the surface of anode body 6 .
- the solid electrolyte layer 9 is preferably formed so as to fill such unevenness of the dielectric layer 7 .
- the solid electrolyte layer 9 includes a first layer 9a and a second layer 9b.
- the first layer 9a is formed to cover the outer surface S of the porous portion 6a and the inner wall surfaces of the holes P with the dielectric layer 7 interposed therebetween.
- the second layer 9b is formed to cover the outer surface S of the porous portion 6a via the dielectric layer 7 and the first layer 9a.
- the second layer 9b is also formed in the hole P of the porous portion 6a so as to cover the inner wall surface of the hole P via the dielectric layer 7 and the first layer 9a.
- the first layer 9a contains a polythiophene-based polymer
- the second layer 9b contains a polypyrrole-based polymer.
- the conductivity of the first layer 9a is 2 S/cm or less.
- the first layer 9a and the second layer 9b have a thickness T1 and a thickness T2, respectively.
- the electrolytic capacitor according to this embodiment is not limited to the electrolytic capacitor having the above structure, and can be applied to electrolytic capacitors having various structures.
- the present invention can be applied to a wound type electrolytic capacitor, an electrolytic capacitor using a sintered body of metal powder as an anode, and the like.
- the anode body may be a porous body in which a part of the anode lead is embedded, and the anode terminal and the anode lead may be electrically connected.
- a method for manufacturing an electrolytic capacitor according to an embodiment of the present invention comprises a first step of preparing an anode body having a dielectric layer formed thereon, a second step of forming a first layer on the dielectric layer, a first and a third step of forming a second layer on the layer.
- the first layer contains a polythiophene-based polymer and the second layer contains a polypyrrole-based polymer.
- the conductivity of the first layer is 2 S/cm or less.
- a solid electrolyte layer including a first layer and a second layer is formed by the second step and the third step.
- the method for manufacturing an electrolytic capacitor may include a step of preparing an anode body prior to the first step.
- the manufacturing method may further include forming a cathode extraction layer and/or sealing the capacitor element.
- the anode body is formed by a known method depending on the type of anode body.
- the anode body can be prepared, for example, by roughening the surface of a foil-like or plate-like base material containing a valve metal.
- the surface roughening forms a porous portion in the surface layer of the anode body.
- Roughening may be performed by forming unevenness on the surface of the base material, for example, by etching (eg, electrolytic etching) the surface of the base material.
- a powder of a valve metal for example, tantalum
- a rod-shaped anode lead is formed into a desired shape (for example, a block shape) with one longitudinal end of the anode lead embedded in the powder.
- a shaped body is obtained.
- the first step is to form a dielectric layer on the anode body.
- the dielectric layer is formed by anodizing the anode body.
- Anodization can be performed by a known method such as chemical conversion treatment.
- the chemical conversion treatment for example, the surface of the anode body is impregnated with the chemical conversion liquid by immersing the anode body in the chemical conversion liquid, and a voltage is applied between the anode body used as the anode and the cathode immersed in the chemical conversion liquid. It can be done by As the conversion liquid, for example, it is preferable to use an aqueous solution of phosphoric acid.
- the second step may include step a of preparing a first treatment liquid and step b of applying the first treatment liquid to the dielectric layer to form the first layer.
- step b for example, the anode body having the dielectric layer formed thereon may be immersed in the first treatment liquid and then dried to form the first layer.
- the first treatment liquid may be applied or dropped onto the anode body on which the dielectric layer is formed, and then dried to form the first layer.
- the first treatment liquid may contain a self-doping polythiophene-based polymer (self-doping type) having a conductivity of 2 S/cm or less.
- a dispersion containing fine particles of the polythiophene-based polymer or a solution of the polythiophene-based polymer can be easily prepared as the first treatment liquid, and the pores of the porous portion are impregnated with the dispersion (solution) of the polythiophene-based polymer. easy.
- the first treatment liquid may also contain a polythiophene-based polymer composite (a composite of a polythiophene-based polymer and a first dopant) having an electrical conductivity of 2 S/cm or less. As the polythiophene-based polymer and the first dopant, those exemplified above can be used.
- the first treatment liquid may further contain other components.
- the first treatment liquid for example, a dispersion (or solution) of a polythiophene-based polymer or a dispersion (or solution) of a polythiophene-based polymer composite of a polythiophene-based polymer and a first dopant may be used.
- the first treatment liquid can be obtained, for example, by oxidative polymerization of a polythiophene-based polymer precursor in a dispersion medium (or solvent). Examples of this precursor include a monomer constituting a polythiophene-based polymer and/or an oligomer in which several monomers are linked.
- the first treatment liquid containing the polythiophene-based polymer composite can be obtained by oxidative polymerization of a polythiophene-based polymer precursor in the presence of the first dopant in a dispersion medium (or solvent).
- the conductivity of the first layer can be adjusted by, for example, the polymerization conditions of the polythiophene-based polymer precursor (for example, the type of polythiophene-based polymer precursor, oxidizing agent, or catalyst), the type of the first dopant, and the like. can be done.
- the polymerization conditions of the polythiophene-based polymer precursor for example, the type of polythiophene-based polymer precursor, oxidizing agent, or catalyst
- the type of the first dopant and the like.
- Examples of the dispersion medium (or solvent) for the first treatment liquid include water, organic solvents, and mixtures thereof.
- organic solvents include monohydric alcohols (methanol, ethanol, propanol, etc.), polyhydric alcohols (ethylene glycol, glycerin, etc.), or aprotic polar solvents (N,N-dimethylformamide, dimethylsulfoxide, acetonitrile, acetone , benzonitrile, etc.).
- the average particle diameter of the particles of the polythiophene-based polymer (or polythiophene-based polymer composite) dispersed in the first treatment liquid is 100 nm or less. It may be 50 nm or less. Although the lower limit of the average particle size is not particularly limited, it is, for example, 5 nm or more.
- the average particle size here means the median size (D50) in the volume-based particle size distribution.
- the average particle size of the polythiophene-based polymer (or polythiophene-based polymer composite) can be determined, for example, from the particle size distribution by dynamic light scattering (DLS).
- the particle size distribution of particles was measured on a volume basis with a dynamic light scattering particle size distribution analyzer (LB-550, manufactured by HORIBA). , and its median diameter (D50) is defined as the average particle diameter.
- a polypyrrole-based polymer precursor is electropolymerized on the first layer to form a second layer containing the polypyrrole-based polymer.
- a polypyrrole-based polymer (non-self-doping type) precursor is electropolymerized on the first layer in the presence of the second dopant to form a second layer containing the polypyrrole-based polymer and the second dopant. may be formed.
- the second layer is formed by electrolytic polymerization using the second treatment liquid.
- the second layer is formed, for example, by immersing the anode body on which the dielectric layer and the first layer are formed in the second treatment liquid, and supplying power from the supply electrode using the first layer as an electrode.
- the second treatment liquid contains, for example, a polypyrrole-based polymer precursor, a second dopant, and a dispersion medium (or solvent).
- the first layer has low conductivity, a large overvoltage may occur during electrolytic polymerization. This point may affect the formation of the second layer.
- polypyrrole-based polymer and the second dopant those exemplified above can be used.
- polypyrrole-based polymer precursors include monomers constituting the polypyrrole-based polymer and/or oligomers in which several monomers are linked.
- dispersion medium or solvent
- those exemplified for the first treatment liquid can be used.
- the second treatment liquid may further contain other components.
- Step of forming cathode extraction layer In this step, a cathode extraction layer is formed by successively laminating a carbon layer and a silver paste layer on the second solid electrolyte layer formed in the third step. A capacitor element can be obtained by forming a cathode extraction layer.
- a conductive adhesive layer is arranged on the surface of the cathode extraction layer, and one end of the cathode terminal is electrically connected to the capacitor element via this adhesive layer.
- an electrode terminal used in an electrolytic capacitor can be used without any particular limitation, and for example, what is called a lead frame may be used.
- Step of encapsulating capacitor element with resin encapsulant The formed capacitor element is sealed with a resin material together with a part of each of the anode terminal and the cathode terminal, for example.
- a resin sealing material is formed by this sealing.
- the resin material a thermosetting resin (such as an epoxy resin) or a resin composition is preferable.
- the resin sealing material includes a thermosetting resin or a cured product of a resin composition.
- ⁇ Examples 1 to 5 and Comparative Examples 1 to 2>> (Step of forming a dielectric layer on the surface of the anode body)
- a tantalum sintered body porous body in which a part of the anode lead was embedded was prepared.
- the tantalum sintered body was a rectangular parallelepiped, and the anode lead was planted from one end face of the rectangular parallelepiped.
- the anode body was anodized in a phosphoric acid aqueous solution to form a dielectric layer containing tantalum oxide (Ta 2 O 5 ) on the surface of the anode body.
- Step a an aqueous dispersion (first treatment liquid) containing a self-doping polythiophene-based polymer having the conductivity shown in Table 1 was prepared (step a).
- the concentration of the polythiophene-based polymer in the first treatment liquid was set to 4% by mass.
- the particles of the polythiophene-based polymer were very small particles at a level (particle diameter of less than 1 nm) difficult to measure by the DLS method.
- the self-doping polythiophene polymer PEDOT having a sulfonic acid group directly bonded to the PEDOT skeleton was used.
- the anode body with the dielectric layer formed thereon was immersed in the first treatment liquid and dried to form the first layer (step b).
- Step of forming second layer An aqueous dispersion (second treatment liquid) containing pyrrole and a dopant (a sulfonate having a naphthalene skeleton) was prepared.
- the pyrrole concentration in the second treatment liquid can be appropriately selected, for example, in the range of 1 to 6% by mass, and the dopant concentration in the second treatment liquid is, for example, in the range of 3 to 12% by mass. can be selected as appropriate.
- the anode body on which the dielectric layer and the first layer are formed is immersed in a second treatment liquid, and electropolymerization of pyrrole is allowed to proceed using the first layer as an electrode to form a second layer containing polypyrrole (conductivity: 60 S/cm). ) was formed.
- a solid electrolyte layer composed of the first layer and the second layer was formed.
- the thickness T1 of the first layer was 5 nm.
- the thickness T2 of the second layer was 100 nm.
- Step of forming cathode extraction layer A carbon layer was formed by applying a dispersion of graphite particles in water to the surface of the solid electrolyte layer and then drying it. Next, after applying a silver paste containing silver particles and a binder resin (epoxy resin) to the surface of the carbon layer, the binder resin was cured by heating to form a silver paste layer. In this manner, a cathode extraction layer composed of a carbon layer and a silver paste layer was formed. Thus, a capacitor element was obtained.
- a binder resin epoxy resin
- Step of encapsulating the capacitor element An anode terminal (anode lead frame) was welded to the anode lead, a cathode terminal (cathode lead frame) was connected to the cathode lead layer with a conductive adhesive, and the capacitor element was sealed with a resin sealing material. Thus, an electrolytic capacitor was produced.
- a self-doping polythiophene-based polymer having a different conductivity is used as the first conductive polymer contained in the first treatment liquid, and the conductivity of the first layer is shown in Table 1. Electrolytic capacitors were produced by changing the values shown. A1 to A5 in Table 1 indicate the electrolytic capacitors of Examples 1 to 5. B1-B2 indicate the electrolytic capacitors of Comparative Examples 1-2.
- a first treatment liquid containing a self-doping polyaniline polymer (conductivity of 0.1 S/cm) is used as the first conductive polymer, and the anode on which the dielectric layer is formed.
- the body was immersed in the first treatment liquid and dried to form a first layer containing a polyaniline polymer.
- the self-doping type polyaniline polymer polyaniline having a sulfonic acid group directly bonded to the polyaniline skeleton was used.
- An electrolytic capacitor B3 of Comparative Example 3 was produced in the same manner as in Example 1 except for the above.
- the initial ESR (m ⁇ ) at a frequency of 100 kHz was measured in an environment of 20° C. using a four-terminal measurement LCR meter for the electrolytic capacitors of Examples and Comparative Examples produced above. Also, the capacitance ( ⁇ F) at a frequency of 120 Hz was measured. Furthermore, the current flowing through the electrolytic capacitor was measured when the rated voltage was maintained for 40 seconds, and the current value was obtained as the leakage current. Table 1 shows the evaluation results.
- the ESR values are shown as relative values when the ESR value of the electrolytic capacitor A5 is 100.
- the capacity of the electrolytic capacitor A5 is taken as 100%, and when the capacity is 90% or more of the capacity of the electrolytic capacitor A5, it is indicated by ⁇ , and when it is less than 90% of the capacity of the electrolytic capacitor A5, it is indicated by x.
- the leakage current is indicated by ⁇ when it is 100 ⁇ A or less, and is indicated by x when it is greater than 100 ⁇ A.
- electrolytic capacitors A1 to A5 in which the conductivity of the first layer containing the polythiophene-based polymer is 2 S/cm or less, obtained a lower ESR than the electrolytic capacitors B1 to B3, and the leakage current was also small.
- the ESR increased and the leakage current also increased. This is considered to be due to the fact that the conductivity of the first layer is greater than 2 S/cm, making it difficult to insulate the first layer.
- the conductivity of the first layer was 2 S/cm or less, but the ESR was increased because the polyaniline polymer film was formed as the first layer.
- the electrolytic capacitor according to the present invention is suitable for applications requiring low ESR.
- 1 electrolytic capacitor
- 2 capacitor element
- 3 resin sealing material
- 4 anode terminal
- 4S main surface of anode terminal
- 5 cathode terminal
- 5S main surface of cathode terminal
- 6 anode body
- 7 Dielectric layer
- 8 cathode portion
- 9 solid electrolyte layer
- 9a first layer
- 9b second layer
- 10 cathode extraction layer
- 11 carbon layer
- 12 silver paste layer
- 13 separation layer
- 14 adhesive layer
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Abstract
Description
電解コンデンサを分解して、コンデンサ素子を取り出し、第1層の成分について分析を行う。後述の第2工程で第1処理液を用いて第1層を形成する場合、第1処理液について分析を行ってもい。分析法としては、TEM(透過型電子顕微鏡)-EELS法(電子エネルギー損失分光法)、NMR法(核磁気共鳴分光法)、ラマン分光法などを用いることができる。
[電解コンデンサ]
(陽極体)
陽極体は、弁作用金属、弁作用金属を含む合金、および弁作用金属を含む化合物などを含むことができる。これらの材料は、一種を単独で用いてもよく、二種以上を組み合わせて用いてもよい。弁作用金属としては、例えば、アルミニウム、タンタル、ニオブ、チタンが好ましく使用される。陽極体は、表層に多孔質部を備えてもよい。このような陽極体は、例えば、エッチングなどにより弁作用金属を含む基材(箔状または板状の基材など)の表面を粗面化することで得られる。また、陽極体は、弁作用金属を含む粒子の成形体またはその焼結体でもよい。焼結体は、多孔質構造を有するため、陽極体の全体が多孔質部となり得る。
誘電体層は、例えば、弁作用金属を含む陽極体を化成処理(陽極酸化処理)することにより形成される。誘電体層は、陽極体の少なくとも一部を覆うように形成されていればよい。誘電体層は、通常、陽極体の表面に形成される。誘電体層は、陽極体の多孔質部の表面に形成され、多孔質部の外表面および孔(ピット)の内壁面に沿って形成される。
固体電解質層は、誘電体層を覆うように形成される。固体電解質層は、必ずしも誘電体層の全体(表面全体)を覆う必要はなく、誘電体層の少なくとも一部を覆うように形成されていればよい。固体電解質層には、ポリチオフェン系高分子を含む第1層と、第1層上に形成されたポリピロール系高分子を含む第2層とが含まれる。誘電体層上に、第1層が形成されていない領域が存在する場合には、この領域において、誘電体層上に第2層が形成されていてもよい。
第1層は、ポリチオフェン系高分子を含む。ポリチオフェン系高分子は、ポリチオフェンおよびその誘導体を含む。ポリチオフェン系高分子としては、例えば、ポリ(3,4-エチレンジオキシチオフェン)(PEDOT)が挙げられる。
第2層は、ポリピロール系高分子を含む。ポリピロール系高分子は、ポリピロールおよびその誘導体を含む。ポリピロール系高分子の重量平均分子量は、特に限定されないが、例えば、1,000以上、1,000,000以下である。
本発明の一実施形態に係る電解コンデンサの製造方法は、誘電体層が形成された陽極体を準備する第1工程と、誘電体層上に第1層を形成する第2工程と、第1層上に第2層を形成する第3工程とを含む。第1層はポリチオフェン系高分子を含み、第2層はポリピロール系高分子を含む。また、第1層の導電率は、2S/cm以下である。第2工程および第3工程により、第1層と第2層とを備える固体電解質層を形成する。また、電解コンデンサの製造方法は、第1工程に先立って、陽極体を準備する工程を含んでもよい。製造方法は、さらに陰極引出層を形成する工程、および/またはコンデンサ素子を封止する工程を含んでもよい。
以下に、各工程についてより詳細に説明する。
この工程では、陽極体の種類に応じて、公知の方法により陽極体を形成する。
陽極体は、例えば、弁作用金属を含む箔状または板状の基材の表面を粗面化することにより準備することができる。粗面化により、陽極体の表層に多孔質部が形成される。粗面化は、基材表面に凹凸を形成できればよく、例えば、基材表面をエッチング(例えば、電解エッチング)することにより行ってもよい。
第1工程では、陽極体上に誘電体層を形成する。誘電体層は、陽極体を陽極酸化することにより形成される。陽極酸化は、公知の方法、例えば、化成処理などにより行うことができる。化成処理は、例えば、陽極体を化成液中に浸漬することにより、陽極体の表面に化成液を含浸させ、陽極体をアノードとして、化成液中に浸漬したカソードとの間に電圧を印加することにより行うことができる。化成液としては、例えば、リン酸水溶液などを用いることが好ましい。
第2工程は、第1処理液を準備する工程aと、第1処理液を誘電体層に付着させて第1層を形成する工程bと、を含んでもよい。工程bでは、例えば、誘電体層が形成された陽極体を第1処理液に浸漬した後、乾燥させて、第1層を形成してもよい。工程bでは、誘電体層が形成された陽極体に第1処理液を塗布または滴下した後、乾燥させて、第1層を形成してもよい。
第3工程では、第1層上でポリピロール系高分子の前駆体を電解重合させて、ポリピロール系高分子を含む第2層を形成する。第3工程では、第2ドーパントの存在下、第1層上でポリピロール系高分子(非自己ドープ型)の前駆体を電解重合させて、ポリピロール系高分子および第2ドーパントを含む第2層を形成してもよい。
この工程では、第3工程で形成された第2固体電解質層上に、カーボン層と銀ペースト層とを順次積層することにより陰極引出層を形成する。陰極引出層を形成することにより、コンデンサ素子を得ることができる。
形成されたコンデンサ素子は、例えば、陽極端子および陰極端子のそれぞれの一部とともに樹脂材料で封止される。この封止により、樹脂封止材が形成される。樹脂材料としては、熱硬化性樹脂(エポキシ樹脂など)または樹脂組成物が好ましい。なお、樹脂封止材は、熱硬化性樹脂または樹脂組成物の硬化物を含む。
以下、本発明を実施例および比較例に基づいて具体的に説明するが、本発明は以下の実施例に限定されるものではない。
(陽極体の表面に誘電体層を形成する工程)
陽極体として、陽極リードの一部が埋設されたタンタル焼結体(多孔質体)を準備した。タンタル焼結体は直方体であり、陽極リードが直方体の一端面より植立されていた。陽極体についてリン酸水溶液中で陽極酸化を行い、陽極体の表面に酸化タンタル(Ta2O5)を含む誘電体層を形成した。
第1導電性高分子として、表1に示す導電率を有する、自己ドープ型のポリチオフェン系高分子を含む水分散液(第1処理液)を準備した(工程a)。第1処理液中のポリチオフェン系高分子の濃度は4質量%とした。ポリチオフェン系高分子の粒子は、DLS法で測定が困難なレベル(粒子径が1nm未満)の非常に小さい粒子であった。自己ドープ型のポリチオフェン系高分子としては、PEDOT骨格に直接結合したスルホン酸基を有するPEDOTを用いた。誘電体層が形成された陽極体を、第1処理液に浸漬し、乾燥させ、第1層を形成した(工程b)。
ピロールと、ドーパント(ナフタレン骨格を有するスルホン酸塩)とを含む水分散液(第2処理液)を調製した。なお、第2処理液中のピロールの濃度は、例えば、1~6質量%の範囲で適宜選択することができ、第2処理液中のドーパントの濃度は、例えば、3~12質量%の範囲で適宜選択することができる。
固体電解質層の表面に、黒鉛粒子を水に分散した分散液を塗布した後、乾燥することによりカーボン層を形成した。次いで、カーボン層の表面に、銀粒子とバインダ樹脂(エポキシ樹脂)とを含む銀ペーストを塗布した後、加熱してバインダ樹脂を硬化させ、銀ペースト層を形成した。このようにして、カーボン層と銀ペースト層とで構成される陰極引出層を形成した。このようにして、コンデンサ素子を得た。
陽極リードに陽極端子(陽極リードフレーム)を溶接し、陰極引出層に陰極端子(陰極リードフレーム)を導電性接着剤により接続し、コンデンサ素子を樹脂封止材で封止した。このようにして、電解コンデンサを作製した。
第1層を形成する工程において、第1導電性高分子として自己ドープ型のポリアニリン系高分子(導電率0.1S/cm)を含む第1処理液を用い、誘電体層が形成された陽極体を、第1処理液に浸漬し、乾燥させ、ポリアニリン系高分子を含む第1層を形成した。自己ドープ型のポリアニリン系高分子としては、ポリアニリン骨格に直接結合したスルホン酸基を有するポリアニリンを用いた。上記以外、実施例1と同様にして、比較例3の電解コンデンサB3を作製した。
上記で作製した実施例および比較例の電解コンデンサについて、20℃の環境下で、4端子測定用のLCRメータを用いて、周波数100kHzにおける初期のESR(mΩ)を測定した。また、周波数120Hzにおける容量(μF)を測定した。さらに、定格電圧で40秒保持した際に電解コンデンサに流れる電流を測定し、その電流値を漏れ電流として求めた。評価結果を表1に示す。
Claims (10)
- 陽極体と、
前記陽極体を覆う誘電体層と、
前記誘導体層を覆う第1固体電解質層と、
前記第1固体電解質層を覆う第2固体電解質層と、
を備え、
前記第1固体電解質層は、ポリチオフェンを基本骨格とする第1導電性高分子を含み、
前記第2固体電解質層は、ポリピロールを基本骨格とする第2導電性高分子を含み、
前記第1固体電解質層の導電率は、2S/cm以下である、電解コンデンサ。 - 前記第1固体電解質層の導電率は、0.1S/cm以上、0.5S/cm以下である、請求項1に記載の電解コンデンサ。
- 前記第1固体電解質層の厚みは、10nm以下である、請求項1または2に記載の電解コンデンサ。
- 前記第2固体電解質層の厚みは、50nm以上、100nm以下である、請求項1~3のいずれか1項に記載の電解コンデンサ。
- 前記第2固体電解質層は、前記第1固体電解質層よりも導電率が高い、請求項1~4のいずれか1項に記載の電解コンデンサ。
- 前記第2固体電解質層の導電率は、30S/cm以上、300S/cm以下である、請求項5に記載の電解コンデンサ。
- 前記第1固体電解質層は、2S/cm以下の導電率を有する、自己ドープ型の前記第1導電性高分子を含む、請求項1~6のいずれか1項に記載の電解コンデンサ。
- 前記第2固体電解質層は、非自己ドープ型の前記第2導電性高分子を含む、請求項1~7のいずれか1項に記載の電解コンデンサ。
- 誘電体層が形成された陽極体を準備する第1工程と、
前記誘電体層上に、ポリチオフェンを基本骨格とする第1導電性高分子を含む第1固体電解質層を形成する第2工程と、
前記第1固体電解質層上で、ポリピロールを基本骨格とする第2導電性高分子の前駆体を電解重合させて、前記第2導電性高分子を含む第2固体電解質層を形成する第3工程と、を含み、
前記第1固体電解質層の導電率は、2S/cm以下である、電解コンデンサの製造方法。 - 前記第2工程は、
2S/cm以下の導電率を有する、自己ドープ型の前記第1導電性高分子を含む第1処理液を準備する工程と、
前記第1処理液を前記誘電体層に付着させて、前記第1導電性高分子を含む前記第1固体電解質層を形成する工程と、
を含む、請求項9に記載の電解コンデンサの製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001148328A (ja) * | 1999-11-19 | 2001-05-29 | Nec Corp | 固体電解コンデンサの製造方法 |
JP2002252149A (ja) * | 2001-02-23 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサとその製造方法 |
JP2007110074A (ja) * | 2005-06-27 | 2007-04-26 | Showa Denko Kk | 固体電解コンデンサ及びその製造方法 |
JP2011192688A (ja) * | 2010-03-12 | 2011-09-29 | Sumitomo Metal Mining Co Ltd | 固体電解コンデンサ及びその製造方法 |
JP2011199266A (ja) * | 2010-02-25 | 2011-10-06 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
WO2018221096A1 (ja) * | 2017-05-31 | 2018-12-06 | パナソニックIpマネジメント株式会社 | 電解コンデンサおよびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001148328A (ja) * | 1999-11-19 | 2001-05-29 | Nec Corp | 固体電解コンデンサの製造方法 |
JP2002252149A (ja) * | 2001-02-23 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサとその製造方法 |
JP2007110074A (ja) * | 2005-06-27 | 2007-04-26 | Showa Denko Kk | 固体電解コンデンサ及びその製造方法 |
JP2011199266A (ja) * | 2010-02-25 | 2011-10-06 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
JP2011192688A (ja) * | 2010-03-12 | 2011-09-29 | Sumitomo Metal Mining Co Ltd | 固体電解コンデンサ及びその製造方法 |
WO2018221096A1 (ja) * | 2017-05-31 | 2018-12-06 | パナソニックIpマネジメント株式会社 | 電解コンデンサおよびその製造方法 |
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