WO2022210155A1 - 積層体、樹脂組成物、および半導体装置の製造方法 - Google Patents

積層体、樹脂組成物、および半導体装置の製造方法 Download PDF

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WO2022210155A1
WO2022210155A1 PCT/JP2022/013454 JP2022013454W WO2022210155A1 WO 2022210155 A1 WO2022210155 A1 WO 2022210155A1 JP 2022013454 W JP2022013454 W JP 2022013454W WO 2022210155 A1 WO2022210155 A1 WO 2022210155A1
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Prior art keywords
resin film
resin
formula
laminate
substrate
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PCT/JP2022/013454
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English (en)
French (fr)
Japanese (ja)
Inventor
有本由香里
中嶋里沙乃
越野美加
荒木斉
富川真佐夫
藤原健典
青島健太
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Toray Industries Inc
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Toray Industries Inc
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Priority to EP22780370.7A priority Critical patent/EP4316816A4/en
Priority to KR1020237028984A priority patent/KR20230167345A/ko
Priority to CN202280014325.8A priority patent/CN116868319A/zh
Priority to JP2022520439A priority patent/JP7806689B2/ja
Priority to US18/284,195 priority patent/US20240186172A1/en
Publication of WO2022210155A1 publication Critical patent/WO2022210155A1/ja
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Definitions

  • Patent Documents 3 and 4 in order to avoid the residue of the adhesive layer on the surface of the semiconductor element, it is necessary to irradiate an excessive laser beam and remove the entire adhesive layer by ablation, and the adhesive layer scatters.
  • the problem was damage such as contamination of the substrate and breakage of the semiconductor element (hereinafter, the residue of the adhesive layer on the surface of the semiconductor element is sometimes referred to as adhesive residue, and the scattered residue of the adhesive layer is sometimes referred to as debris).
  • Patent Document 5 by separating the adhesive layer and the laser absorption layer, the transfer can be performed with low energy and the damage to the semiconductor element can be reduced.
  • the energy range of the laser that can be transferred with good positional accuracy is narrow, and there was a problem with the processing margin to realize practical transfer.
  • cross-linking agents include compounds having an alkoxymethyl group or methylol group, such as DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML- OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DMLBisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TP
  • imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-n-propylimidazole, 2-undecyl-1H-imidazole, 2-heptadecyl-1H-imidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-1H-imidazole, 4-methyl-2-phenyl-1H-imidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methyl imidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl -4-methylimidazolium trimellitate, 1-
  • the film thickness of the resin film is 0.7 ⁇ m or more and 30 ⁇ m or less.
  • the thickness is 0.7 ⁇ m or more, it is possible to reduce the heat generated when irradiating the laser beam from being transmitted to the semiconductor element, suppress damage to the semiconductor element, and furthermore, the resin film is broken and debris is generated. As a result, it is possible to prevent the counter substrate from being soiled.
  • R 1 and R 3 represent tetracarboxylic acid residues.
  • tetracarboxylic acid residues constituting R 1 or R 3 (COOR 5 ) include pyromellitic acid, 3,3′,4,4′-biphenyltetracarboxylic acid, 2,3,3′,4′ -biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-benzophenonetetracarboxylic acid, 2,2',3,3'-benzophenonetetracarboxylic acid , 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, 2,2-bis(2,3-dicarboxyphenyl)hexafluoropropane, 1,1-bis(3,4-dicarboxyphenyl ) ethane, 1,1-bis(2,3
  • acid anhydrides Preferable examples of such acid anhydrides, acid chlorides, and monocarboxylic acids include known ones such as phthalic anhydride, maleic anhydride, and nadic anhydride.
  • Di-tert-butyl dicarbonate and the like are also preferably used as the reactive terminal. You may use 2 or more types of these.
  • siloxane diamine residue represented by formula (9) examples include those derived from the following diamines. Specifically, ⁇ , ⁇ -bis(3-aminopropyl)polydimethylsiloxane, ⁇ , ⁇ -bis(3-aminopropyl)polydiethylsiloxane, ⁇ , ⁇ -bis(3-aminopropyl)polydipropylsiloxane, ⁇ , ⁇ -bis(3-aminopropyl)polydibutylsiloxane, ⁇ , ⁇ -bis(3-aminopropyl)polydiphenoxysiloxane, ⁇ , ⁇ -bis(2-aminoethyl)polydimethylsiloxane, ⁇ , ⁇ -bis (2-aminoethyl)polydiphenoxysiloxane, ⁇ , ⁇ -bis(4-aminobutyl)polydimethylsiloxane, ⁇ , ⁇ - ⁇
  • R 10 to R 13 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
  • l, m and n each independently represent an integer of 4 to 40;
  • p represents an integer of 10-40.
  • o represents an integer of 1 to 16;
  • an alignment mark on the substrate 2 side for transfer alignment there may be an alignment mark on the substrate 2 side for transfer alignment.
  • the laminate 2 of the present invention By using the laminate 2 of the present invention, transfer is possible even with low energy, and even when the energy density of the laser beam is changed, the influence on position accuracy, debris, and adhesive residue can be reduced.
  • the energy density of the laser light to be irradiated may have uneven output, and in order to reduce the influence of the uneven output on the transferability, the laminate 2 has the same degree of energy density regardless of the energy density of the laser light. It preferably has transferability.
  • the range of the energy density of the laser light having the same level of transferability it is more preferable that there is a margin of 30 mJ/cm 2 or more, and from the viewpoint of practicality, 50 ⁇ m/cm 2 or more is particularly preferable.
  • the sample was pulled using Tensilon RTM-100 (manufactured by Orientec Co., Ltd.) at a tensile speed of 50 mm / min at room temperature of 23.0 ° C. and humidity of 45.0% RH, and breaking elongation at room temperature of 23.0 ° C. was measured. The measurement was performed on 10 strips per sample, and the average value of the top 5 points in each result was obtained.
  • the laser light source, the laminate 2 prepared by the method described above, and the opposing substrate were arranged in this order.
  • the surface of the laminated body 2 on which the dummy chip is held and the surface of the counter substrate on which the adhesive layer is formed were held facing each other so that the gap between the surface of the dummy chip and the surface of the adhesive layer was 50 ⁇ m.
  • the laminate 2 and the opposing substrate were aligned using their respective alignment marks.
  • the spot size of the laser beam is a square of 120 ⁇ m ⁇ 220 ⁇ m, and the positions of the laser light source and the laminate are adjusted so that one dummy chip is placed in the center of the spot of the laser beam. I kept it out of the light.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Laminated Bodies (AREA)
PCT/JP2022/013454 2021-04-01 2022-03-23 積層体、樹脂組成物、および半導体装置の製造方法 Ceased WO2022210155A1 (ja)

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EP22780370.7A EP4316816A4 (en) 2021-04-01 2022-03-23 LAMINATE, RESIN COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
KR1020237028984A KR20230167345A (ko) 2021-04-01 2022-03-23 적층체, 수지 조성물 및 반도체 장치의 제조 방법
CN202280014325.8A CN116868319A (zh) 2021-04-01 2022-03-23 层叠体、树脂组合物、及半导体装置的制造方法
JP2022520439A JP7806689B2 (ja) 2021-04-01 2022-03-23 積層体、樹脂組成物、および半導体装置の製造方法
US18/284,195 US20240186172A1 (en) 2021-04-01 2022-03-23 Laminate, resin composition, and method for manufacturing semiconductor device

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US20240186172A1 (en) 2024-06-06
JP7806689B2 (ja) 2026-01-27
CN116868319A (zh) 2023-10-10
EP4316816A1 (en) 2024-02-07
EP4316816A4 (en) 2025-07-16
KR20230167345A (ko) 2023-12-08

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