WO2022205496A1 - 晶圆清洗设备及定位治具 - Google Patents

晶圆清洗设备及定位治具 Download PDF

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Publication number
WO2022205496A1
WO2022205496A1 PCT/CN2021/086377 CN2021086377W WO2022205496A1 WO 2022205496 A1 WO2022205496 A1 WO 2022205496A1 CN 2021086377 W CN2021086377 W CN 2021086377W WO 2022205496 A1 WO2022205496 A1 WO 2022205496A1
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WO
WIPO (PCT)
Prior art keywords
positioning
cleaning
wafer
scale line
center
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PCT/CN2021/086377
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English (en)
French (fr)
Inventor
晁萌
杨晶峰
Original Assignee
台湾积体电路制造股份有限公司
台积电(中国)有限公司
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Application filed by 台湾积体电路制造股份有限公司, 台积电(中国)有限公司 filed Critical 台湾积体电路制造股份有限公司
Publication of WO2022205496A1 publication Critical patent/WO2022205496A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • the present application belongs to the field of semiconductor technology, and in particular relates to a wafer cleaning equipment and a positioning fixture.
  • the wafer needs to be cleaned after chemical mechanical polishing (CMP), usually the cleaning solution is continuously dripped on the rotating wafer, but often the cleaning solution does not drip. In the case of the center of the wafer, the surface of the wafer is cleaned unevenly or incompletely.
  • CMP chemical mechanical polishing
  • the purpose of this application is to provide a wafer cleaning equipment and a positioning fixture, which can assist in adjusting the drop position of the cleaning liquid on the wafer.
  • an embodiment of the present application provides a wafer cleaning device, including: a positioning base, including a rotatable clamp, the clamp is used to fix the wafer; a positioning fixture, detachably fixed on the fixture, the positioning fixture It includes a positioning surface arranged parallel to the horizontal plane, a plurality of concentric circles and a scale line based on the centers of the plurality of concentric circles are arranged on the positioning surface, and the center of the circle is located on the rotation center line of the fixture; and a cleaning device, and a positioning base Relatively arranged, the cleaning device includes a movable cleaning nozzle, which can drop droplets toward the positioning surface, and adjust the position of the cleaning nozzle through the deviation between the coordinate position shown by the scale line on the positioning surface and the center of the circle. , so that the droplet falls on the center of the circle.
  • the scale line of the positioning jig includes a first scale line and a second scale line, the first scale line passes through the center of the circle and extends in a first direction, and the second scale line is along a plurality of concentric circles distribution in the circumferential direction.
  • the scale line of the positioning jig includes a first scale line and a third scale line
  • the first scale line passes through the center of the circle and extends in the first direction
  • the third scale line passes through the center of the circle and extends along the first direction. It extends in two directions, and the first direction and the second direction intersect.
  • the first direction and the second direction are arranged at a right angle.
  • the first direction is a horizontal direction or a vertical direction within the positioning plane.
  • the plurality of concentric circles on the positioning surface are distributed at equal intervals along their radial direction.
  • the scale line of the positioning jig includes a plurality of scale marks, and the distance between two adjacent scale marks is set in a millimeter level or a micrometer level.
  • the positioning fixture is a plate-like structure, and the shape is a circle or a regular polygon.
  • the cleaning device further includes a cleaning disk, and the cleaning nozzles are arranged through the cleaning disk.
  • an embodiment of the present application provides a positioning jig.
  • the positioning jig includes a positioning surface arranged parallel to a horizontal plane.
  • the positioning surface is provided with a plurality of concentric circles and a scale line based on the centers of the plurality of concentric circles.
  • the wafer cleaning equipment includes a positioning base, a positioning fixture and a cleaning device, and the positioning fixture is detachably fixed on the rotatable fixture of the positioning base 1 ,
  • the cleaning nozzle of the cleaning device and the positioning base are arranged opposite to the positioning base.
  • the positioning surface of the positioning fixture is provided with a plurality of concentric circles and scale lines based on the centers of the plurality of concentric circles. After the positioning jig is fixed on the jig, the cleaning nozzle is made to drop the cleaning liquid to the positioning jig to obtain the landing point of the cleaning liquid on the positioning jig.
  • the concentric circles and scale lines on the positioning surface quantitatively obtain the deviation of the cleaning nozzle relative to the rotation center of the fixture, so as to adjust the relative position between the fixture and the cleaning nozzle, so that the cleaning liquid from the cleaning nozzle can drip onto the wafer. It ensures the uniformity and thoroughness of wafer surface cleaning and improves the pass rate of wafer production.
  • FIG. 1 is a schematic diagram of cleaning droplets falling on a wafer in the related art
  • FIG. 2 is a schematic diagram of a wafer cleaning apparatus according to an embodiment of the present application.
  • FIG. 3 is a schematic top-view structural diagram of a positioning fixture according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a scene in which the positioning jig shown in FIG. 3 obtains the coordinate position of the droplet;
  • FIG. 5 is a schematic diagram of the assembly effect of the positioning jig and the fixture shown in FIG. 3;
  • FIG. 6 is a schematic top-view structural diagram of a positioning jig according to another alternative embodiment of the present application.
  • FIG. 7 is a schematic diagram of a scene in which the positioning jig shown in FIG. 6 obtains the coordinate position of the droplet;
  • FIG. 8 is a schematic diagram illustrating a comparison of defect rates between the wafer cleaning equipment using the related art in the art and the wafer cleaning apparatus according to an embodiment of the present application.
  • Cleaning device 31. Cleaning nozzle; 32. Adjustment mechanism; 33. Cleaning liquid supply device; 331, First pipeline; 332, Second pipeline; 333, First cleaning liquid source; source; 34, cleaning plate;
  • FIG. 1 is a schematic diagram of cleaning droplets falling on a wafer in the related art of the present application.
  • CMP chemical mechanical polishing
  • the embodiments of the present application provide a wafer cleaning equipment and a positioning jig, the positioning jig can realize the positioning of the cleaning nozzle, so that the cleaning liquid 4 can be dropped on the center of the wafer 5, thereby improving the crystallinity of the wafer.
  • the cleaning effect of the circle 5 cleaning is provided.
  • FIG. 2 is a schematic diagram of a wafer cleaning apparatus according to an embodiment of the application
  • FIG. 3 is a schematic top-view structural diagram of a positioning jig according to an embodiment of the application.
  • an embodiment of the present application provides a wafer cleaning apparatus, including a positioning base 1 , a positioning fixture 2 and a cleaning device 3 .
  • the positioning base 1 includes a rotatable clamp 12 for fixing the wafer 5 .
  • the positioning base 1 is used as a mounting and positioning carrier for the wafer 5 .
  • the positioning base 1 further includes a rotation mechanism 11 , and the rotation mechanism 11 drives the wafer 5 to rotate through the clamp 12 .
  • the positioning fixture 2 is detachably fixed on the fixture 12.
  • the positioning fixture 2 includes a positioning surface 23 arranged parallel to the horizontal plane.
  • the positioning surface 23 is provided with a plurality of concentric circles 21 and the center O of the plurality of concentric circles 21 is used as a reference. tick mark 22, and the circle center O is located on the rotation center line of the fixture 12.
  • the cleaning device 3 is disposed opposite to the positioning base 1 , and the cleaning device 3 includes a movable cleaning nozzle 31 .
  • the cleaning nozzle 31 can drop droplets toward the positioning surface 23 , and is shown by the scale line 22 on the positioning surface 23 of the droplets.
  • the deviation between the coordinate position and the center O of the circle adjusts the position of the cleaning nozzle so that the droplets fall on the center O of the circle.
  • the cleaning device 3 further includes an adjustment mechanism 32 , and the cleaning device 3 adjusts the position of the cleaning nozzle 31 relative to the positioning base 1 through the adjustment mechanism 32 .
  • the adjustment mechanism 32 can have three degrees of freedom, such as two translation degrees of freedom in the horizontal direction and the vertical direction in the positioning surface 23 and a translation degree of freedom in the vertical direction perpendicular to the plane where the positioning surface 23 is located; The translational freedom in a certain direction within the positioning surface 23 , the translational freedom in the vertical direction perpendicular to the plane where the positioning surface 23 is located, and the rotational freedom around the axis of the vertical direction.
  • the translational degree of freedom in the vertical direction perpendicular to the plane where the positioning surface 23 is located is used to move the cleaning nozzle 31 closer to the positioning surface 23 or away from the positioning surface 23
  • the other two degrees of freedom are used to adjust the relative position of the cleaning nozzle 31 to the positioning surface 23 .
  • the positioning surface 23 of the positioning fixture 2 is provided with a plurality of concentric circles 21 and a scale line 22 based on the center O of the plurality of concentric circles 21, it is possible to quantitatively obtain the droplets of the cleaning solution 4 falling on the positioning surface 23.
  • the positioning fixture 2 is removed from the fixture 12, and the wafer 5 is fixed on the fixture 12. Since the relative position between the cleaning nozzle 31 and the fixture 12 has passed the positioning fixture 2 After the adjustment, the center of the wafer 5 is aligned with the rotation center of the fixture 12 , therefore, it can be ensured that the cleaning solution 4 dropped by the positioning nozzle falls on the center of the wafer 5 .
  • the jig 12 drives the wafer 5 to rotate under the driving of the rotating mechanism 11 , the cleaning solution 4 can be evenly coated on the entire surface of the wafer 5 , thereby improving the cleaning cleanliness and uniformity of the wafer 5 .
  • the clamp 12 includes at least three jaws 121 that are evenly distributed along its circumference. Each jaw 121 can move in the radial direction of the jig 12 to synchronously move away from or close to the rotation centerline of the jig 12 , so that the center of the positioning jig 2 or the center of the wafer 5 is also located on the rotation centerline of the jig 12 . In this way, the position of the cleaning nozzle 31 is adjusted according to the deviation between the coordinate position of the droplet dropped by the cleaning nozzle 31 on the positioning surface 23 of the positioning jig 2 and the center O of the circle, that is, the position of the cleaning nozzle 31 is adjusted by the adjustment mechanism 32 .
  • the cleaning device 3 further includes a cleaning solution supply device 33 , and the cleaning solution supply device 33 is configured to provide the cleaning device 3 with the cleaning solution 4 .
  • the cleaning liquid supply device 33 includes a first pipeline 331 , a second pipeline 332 , a first cleaning liquid source 333 and a second cleaning liquid source 334 .
  • One end of the first pipeline 331 is communicated with the cleaning nozzle 31 , and the other end is communicated with the first cleaning liquid source 333 .
  • One end of the second pipeline 332 is communicated with the cleaning nozzle 31 , and the other end is communicated with the second cleaning liquid source 334 .
  • the cleaning liquid 4 may be deionized water mixed with hot nitrogen gas
  • the first cleaning liquid source 333 is a nitrogen gas source
  • the second cleaning liquid source 334 is a deionized water source.
  • the hot nitrogen gas and the deionized water are mixed in the cleaning nozzle 31 and dropped on the wafer 5 together for cleaning the wafer 5 .
  • the wafer cleaning equipment provided in the embodiment of the present application includes a positioning base 1, a positioning fixture 2 and a cleaning device 3.
  • the positioning fixture 2 is detachably fixed on the rotatable fixture 12 of the positioning base 1, and the cleaning device
  • the cleaning nozzle 31 of 3 is arranged opposite to the positioning base 1 .
  • the positioning surface 23 of the positioning jig 2 is provided with a plurality of concentric circles 21 and a scale line 22 based on the center O of the plurality of concentric circles 21 . After the positioning jig 2 is fixed on the fixture 12 of the positioning base 1 , the cleaning nozzle 31 is made to drop the cleaning liquid 4 onto the positioning jig 2 to obtain the landing point of the cleaning liquid 4 on the positioning jig 2 .
  • the deviation of the cleaning nozzle 31 relative to the rotation center line of the fixture 12 is quantitatively obtained, so as to adjust the relative position between the fixture 12 and the cleaning nozzle 31, so that the cleaning nozzle 31 flows out
  • the cleaning solution 4 can be dropped on the center of the wafer 5 to ensure the uniformity and thoroughness of the surface cleaning of the wafer 5, thereby improving the pass rate of the wafer 5 production.
  • the cleaning device 3 further includes a cleaning tray 34 , and the cleaning nozzles 31 are arranged through the cleaning tray 34 .
  • the cleaning tray 34 can be made of transparent material, such as polycarbonate PC or glass. During the positioning process of the cleaning nozzle 31 , the drop position of the droplet on the positioning fixture 2 can be observed through the transparent cleaning disk 34 to obtain the deviation between the coordinate position of the droplet on the positioning surface 23 and the center O of the circle amount, and then adjust the position of the cleaning nozzle 31 by the adjustment mechanism 32 .
  • the adjustment mechanism 32 is also used to adjust the height dimension of the cleaning nozzle 31 along the direction perpendicular to the positioning fixture 2 .
  • the cleaning disk 34 is placed close to the surface of the wafer 5 , the cleaning nozzle 31 is arranged through the cleaning disk 34 , and the droplets dropped by the cleaning nozzle 31 are between the cleaning disk 34 and the positioning surface 23 of the positioning jig 2 .
  • a liquid film is formed.
  • the jig 12 drives the wafer 5 to rotate, the liquid film gradually spreads out in a circular shape from the center O on the entire surface of the wafer 5, so that the cleaning liquid can evenly spread over the entire surface of the wafer 5, improving the cleaning effect.
  • the adjustment mechanism 32 drives the cleaning nozzle 31 to move away from the positioning fixture 2 in a direction perpendicular to the positioning surface 23 (vertical direction), so as to facilitate the removal of the positioning fixture 2 from the fixture 12 and at the same time It is convenient to fix the wafer 5 on the fixture 12 .
  • the adjustment mechanism 32 drives the cleaning nozzle 31 to approach the wafer 5 to clean the wafer 5 .
  • the plurality of concentric circles 21 on the positioning surface 23 are equally spaced along their radial direction.
  • the plurality of concentric circles 21 are equally spaced along their radial direction, and the distance between two adjacent concentric circles 21 can be more easily determined.
  • the coordinate position of the droplet can be estimated through the detailed tick mark values.
  • the scale line 22 of the positioning jig 2 includes a plurality of scale marks, and the distance between two adjacent scale marks is set in a millimeter level or a micrometer level. If the positioning accuracy of the wafer cleaning equipment is required to be high, the distance between two adjacent scale marks is set to a micrometer level, for example, 1 ⁇ m. If the positioning accuracy of the wafer cleaning equipment is low, the distance between two adjacent scale marks is set to a millimeter level, for example, 1 mm, so as to improve the positioning accuracy of the cleaning nozzle 31 .
  • FIG. 4 is a schematic diagram of a scene where the positioning jig 2 shown in FIG. 3 acquires the coordinate positions of the droplets.
  • the scale line 22 of the positioning fixture 2 includes a first scale line 221 and a second scale line 222 , and the first scale line 221 passes through the center O and extends along the first direction X , the second scale lines 222 are distributed at intervals along the circumferential direction of the plurality of concentric circles 21 .
  • the first direction X is a horizontal direction within the positioning surface 23 .
  • the first direction X is a vertical direction within the positioning surface 23 .
  • the description will be given by taking the first direction X as the horizontal direction in the positioning surface 23 as an example.
  • the scale line 22 of the positioning fixture 2 includes a first scale line 221 and a second scale line 222 .
  • the first scale line 221 passes through the center O and extends along the first direction X.
  • the first scale line 221 can quantitatively display the radial deviation distance L0 from any position on the positioning surface 23 to the center O of the concentric circle 21 .
  • the droplet of the cleaning liquid drops on a certain point on the positioning surface 23, the droplet landing point is converted into a certain point on the first scale line 221 through the concentric circle 21, so as to quantitatively obtain the position on the positioning surface 23.
  • the radial distance L0 from the point to the center O of the concentric circle 21 .
  • the second scale lines 222 are distributed at intervals along the circumferential direction of the plurality of concentric circles 21 , and the second scale lines 222 can quantitatively display the circumferential angle between the line connecting any position on the positioning surface 23 and the center O of the concentric circles 21 and the first direction X theta. According to the landing point of the droplet on the positioning surface 23, a line connecting the landing point and the center O of the concentric circle 21 can be obtained.
  • the included angle between a scale line 221 is the circumferential angle ⁇ between the connecting line and the first direction X. As shown in FIG.
  • the coordinate position of the droplet on the positioning surface 23 can be determined according to the radial distance L0 and the circumferential angle ⁇ , and then the position of the cleaning nozzle 31 can be adjusted by the adjustment mechanism 32, The cleaning nozzle 31 can be moved to the rotation center line of the fixture 12 to realize the positioning of the cleaning nozzle 31 .
  • FIG. 5 is a schematic diagram of an assembly effect of the positioning jig and the fixture shown in FIG. 3 .
  • the positioning fixture 2 is a plate-like structure, and the shape is a circle or a regular polygon. Considering that the clamping jaws 121 of the fixture 12 can synchronously approach or move away from the rotation centerline of the fixture 12 , when the positioning fixture 2 is supported by the clamping jaws 121 , the center of the positioning fixture 2 is located on the rotation centerline of the fixture 12 . At this time, the center O of the concentric circles 21 coincides with the center of the positioning jig 2 , that is, the positioning jig 2 has a rotationally symmetrical structure, which can reduce the processing difficulty of the positioning jig 2 .
  • the fixture 12 can clamp any position of the positioning fixture 2; when the positioning fixture 2 is a regular polygon, the regular polygon can be, for example, a square, a regular hexagon, etc.
  • the number of sides of the polygon should be an integer multiple of the number of clamping jaws 121, and the clamping jaws 121 clamp the sides of the regular polygon.
  • the number of clamping jaws 121 is 3, the positioning fixture 2 is a regular hexagon, the number of sides is twice the number of clamping jaws 121 , and the clamping jaws 121 clamp the sides of the positioning fixture 2 .
  • the edge of the plate-like structure may scratch the wafer 5, and may also cause safety hazards to other items or operators. horn.
  • FIG. 6 is a schematic top-view structural diagram of a positioning jig 2 according to another alternative embodiment of the present application
  • FIG. 7 is a schematic diagram of a scene in which the positioning jig 2 shown in FIG. 6 acquires the coordinate positions of droplets.
  • another alternative embodiment of the present application further provides a positioning fixture 2 , which is similar in structure to the structure shown in FIGS. 3 to 5 , and the difference lies in the way in which the scale lines 22 are arranged. different.
  • the scale line 22 of the positioning fixture 2 includes a first scale line 221 and a third scale line 223.
  • the first scale line 221 passes through the center O and extends along the first direction X
  • the third scale line 223 passes through the center of the circle. O extends along the second direction, and the first direction X and the second direction intersect.
  • the first direction X and the second direction Y are set at a right angle.
  • the coordinate system formed by the first scale line 221 and the third scale line 223 is a plane rectangular coordinate system. Compared with the non-rectangular coordinate system, it is easier to obtain the coordinates of a certain point on the positioning surface 23 .
  • the adjustment mechanism 32 of the cleaning nozzle 31 usually adopts the form of orthogonal multiple degrees of freedom to move the cleaning nozzle 31, when the first direction X and the second direction Y are perpendicular to each other, the coordinates of a certain point on the positioning surface 23 are more It can be easily converted into the movement amount of the adjustment mechanism 32 .
  • the first scale line 221 and the third scale line 223 form a coordinate system in the positioning surface 23, and the center O of the concentric circles 21 is the origin of the coordinate system.
  • the position of any point in the positioning surface 23 can be converted into coordinates relative to the first direction X and the second direction Y. According to the coordinates, the first deviation L1 of the point relative to the origin along the first direction X and the second deviation L2 of the second direction Y can be obtained quantitatively.
  • the cleaning nozzle 31 After obtaining the first deviation amount L1 along the first direction X and the second deviation amount L2 in the second direction Y, it is only necessary to drive the cleaning nozzle 31 to move the distance L1 along the first direction X through the adjustment mechanism 32 according to L1 and L2 And the distance L2 is moved along the second direction Y, so that the cleaning nozzle 31 can be moved to the rotation center line of the fixture 12 to realize the positioning of the cleaning nozzle 31 . For example, if a droplet falls on the positioning surface 23 of the positioning jig 2, the droplet droplet can be directly obtained through the first scale line 221 and the third scale line 223 according to the droplet's landing point on the positioning surface 23.
  • the center O moves 3 mm and moves 4 mm toward the center O of the concentric circle 21 along the second direction, so that the cleaning nozzle 31 is located above the center O of the concentric circle 21 , that is, the cleaning nozzle 31 is located on the rotation centerline of the fixture 12 .
  • the positioning jig 2 may include a first scale line 221 , a second scale line 222 and a third scale line 223 at the same time.
  • the first scale line 221 can be matched with the second scale line or the first scale line 221 can be matched with the third scale line 223 .
  • the first direction X may be any direction within the positioning surface 23 .
  • the first direction X is the horizontal direction or the vertical direction within the positioning surface 23 .
  • the positioning process of the cleaning nozzle 31 and the cleaning process of the wafer 5 are included.
  • the positioning process of the cleaning nozzle 31 includes:
  • Step S1.1 first fix the positioning fixture 2 by the clamp 12, and then move the cleaning nozzle 31 to the top of the positioning fixture 2;
  • Step S1.2 make the cleaning nozzle 31 drip the cleaning liquid 4, and record the drop point of the cleaning liquid 4 on the positioning fixture 2;
  • Step S1.3 obtain the movement amount of the cleaning nozzle 31 in the first direction X and the second direction Y according to the deviation between the coordinate position shown by the scale line 22 on the positioning surface 23 and the center O of the circle;
  • Step S1.4 according to the movement amount of the cleaning nozzle 31 in the first direction X and the second direction Y, move the cleaning nozzle 31 through the adjustment mechanism 32, so that the clear nozzle 31 is located on the rotation center line of the fixture 12;
  • step S1.5 the cleaning nozzle 31 is moved away from the positioning jig 2 in a direction up to the positioning surface 23 by the adjusting mechanism 32, and the positioning jig 2 is removed from the jig 12.
  • the cleaning process for wafer 5 includes:
  • Step S2.1 fixing the wafer 5 to be cleaned on the fixture 12;
  • step S2.2 the cleaning nozzle 31 is moved downward and close to the wafer 5 by the adjustment mechanism;
  • Step S2.3 turning on the cleaning device 3, so that the cleaning nozzle 31 continuously drips the cleaning liquid 4;
  • Step S2.4 rotating the fixture 12 to clean the wafer 5 .
  • the wafer cleaning apparatus of the embodiment of the present application has a good cleaning effect.
  • FIG. 8 is a schematic diagram illustrating a comparison of defect rates between the wafer cleaning equipment using the related art in the art and the wafer cleaning apparatus according to an embodiment of the present application.
  • Wafers 5 are cleaned continuously by using the wafer cleaning apparatus of the embodiment of the present application, and each 1 million wafers 5 are used as a group. Each time a group of wafers 5 is cleaned, the group of wafers 5 is inspected once, and the number of defective wafers 5 is recorded to obtain the defect rate of the wafers 5 .
  • the first 7 groups use the related technology of the present application to clean the wafer 5
  • the cleaning nozzle 31 is positioned first and then the wafer 5 is cleaned.
  • the average defect rate of wafer 5 in the first 7 groups is 13.85 wafers/106 wafers (13.85ea/M).
  • the average defect rate of wafer 5 in groups 8 to 12 is 9.2 wafers/10 wafers. 6 pieces (9.2ea/M), the overall defect rate decreased by about 33%.
  • the wafer cleaning apparatus of the embodiment of the present application significantly reduces the defect rate of the wafer 5 by improving the cleaning effect of the wafer 5 .
  • the embodiment of the present application provides a wafer cleaning equipment, by setting a plurality of concentric circles 21 on the positioning surface 23 of the positioning fixture 2 and a scale line 22 based on the center O of the plurality of concentric circles 21, to In addition to improving the cleaning effect of the wafer 5 .
  • the wafer cleaning apparatus of the embodiment of the present application can also obtain cleaning nozzles more accurately and quantitatively by combining the first scale line 221 and the second scale line 222, or by combining the first scale line 221 and the third scale line 223
  • the offset of the 31 relative to the center O of the concentric circle 21 can further improve the positioning accuracy of the cleaning nozzle 31 , and ultimately further improve the cleaning effect of the wafer 5 .

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Abstract

本申请涉及一种晶圆清洗设备及定位治具，该晶圆清洗设备包括：定位基座，包括可转动的夹具，夹具用于固定晶圆；定位治具，可拆卸地固定于夹具上，定位治具包括平行于水平面设置的定位面，定位面上设置有多个同心圆和以多个同心圆的圆心为基准的刻度线，且圆心位于夹具的旋转中心线上；清洗装置，与定位基座相对设置，清洗装置包括可移动的清洗喷嘴，清洗喷嘴能够朝向定位面滴落液滴，并通过液滴示出的坐标位置与圆心之间的偏差调整清洗喷嘴的位置，以使液滴落在圆心上。本申请通过在定位治具的定位面上设置多个同心圆和以多个同心圆的圆心为基准的刻度线，能够定量获取清洗喷嘴与可转动夹具的位置偏差，提高清洗喷嘴的定位准确性。

Description

晶圆清洗设备及定位治具
相关申请的交叉引用
本申请要求享有于2021年4月2日提交的名称为“晶圆清洗设备及定位治具”的中国专利申请202120682638.3的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请属于半导体技术领域，尤其涉及一种晶圆清洗设备及定位治具。
背景技术
在半导体制造业中，对晶圆进行化学机械抛光(Chemical Mechanical Polishing，CMP)后需要对晶圆进行清洗，通常是在旋转的晶圆上连续滴落清洗液，但经常出现清洗液未滴落在晶圆中心的情况，导致晶圆的表面清洗不均匀或不彻底。
发明内容
本申请的目的旨在提供一种晶圆清洗设备及定位治具，该定位治具能够辅助调整清洗液在晶圆上的滴落位置。
第一方面，本申请实施例提供一种晶圆清洗设备，包括：定位基座，包括可转动的夹具，夹具用于固定晶圆；定位治具，可拆卸地固定于夹具上，定位治具包括平行于水平面设置的定位面，定位面上设置有多个同心圆和以多个同心圆的圆心为基准的刻度线，且圆心位于夹具的旋转中心线上；以及清洗装置，与定位基座相对设置，清洗装置包括可移动的清洗喷嘴，清洗喷嘴能够朝向定位面滴落液滴，并通过液滴在定位面上的刻度线示出的坐标位置与圆心之间的偏差调整清洗喷嘴的位置，以使液滴落在圆心上。
根据本申请实施例的一个方面，定位治具的刻度线包括第一刻度线和第二刻度线，第一刻度线经过圆心且沿第一方向延伸，第二刻度线沿多个同心圆的圆周方向间隔分布。
根据本申请实施例的一个方面，定位治具的刻度线包括第一刻度线和第三刻度线，第一刻度线经过圆心且沿第一方向延伸，第三刻度线经过圆心且沿第二方向延伸，第一方向与第二方向相交设置。
根据本申请实施例的一个方面，第一方向与第二方向之间呈直角设置。
根据本申请实施例的一个方面，第一方向为在定位面内的水平方向或者竖直方向。
根据本申请实施例的一个方面，定位面上的多个同心圆沿自身径向等间距分布。
根据本申请实施例的一个方面，定位治具的刻度线包括多个刻度标记，相邻的两个刻度标记之间的距离呈毫米级或者微米级设置。
根据本申请实施例的一个方面，定位治具为板状结构，形状为圆形或者正多边形。
根据本申请实施例的一个方面，清洗装置还包括清洗盘，清洗喷嘴贯穿清洗盘设置。
第二方面，本申请实施例提供一种定位治具，定位治具包括平行于水平面设置的定位面，定位面上设置有多个同心圆和以多个同心圆的圆心为基准的刻度线。
根据本申请实施例提供的晶圆清洗设备及定位治具，晶圆清洗设备包括定位基座、定位治具和清洗装置，定位治具可拆卸地固定于定位基座1的可转动夹具上，清洗装置的清洗喷嘴与定位基座相对设置该定位治具的定位面上设有多个同心圆和以多个同心圆的圆心为基准的刻度线。在将定位治具固定在夹具上后，使清洗喷嘴向定位治具滴落清洗液，获得清洗液在定位治具上的落点。根据定位面上的同心圆和刻度线，定量地获取清洗喷嘴相对夹具的旋转中心的偏差量，从而调整夹具与清洗喷嘴之间的相对位置，使得清洗喷嘴流出的清洗液能够滴落在晶圆的中心，保证晶圆表面清洗的均匀性和彻底性，提高晶圆生产的合格率。
附图说明
从下面结合附图对本申请的具体实施方式的描述中可以更好地理解本申请，其中，通过阅读以下参照附图对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显，相同或相似的附图标记表示相同或相似的特征。
图1为相关技术中清洗液滴落在晶圆上的示意图；
图2为本申请一个实施例的晶圆清洗设备的示意图；
图3为根据本申请一个实施例的定位治具的俯视结构示意图；
图4为图3所示的定位治具获取液滴的坐标位置的场景示意图；
图5为图3所示的定位治具与夹具的组装效果示意图；
图6为根据本申请另一替代实施例的定位治具的俯视结构示意图；
图7为图6所示的定位治具获取液滴的坐标位置的场景示意图；
图8为使用本领域相关技术与使用本申请实施例的晶圆清洗设备的缺陷率对比示意图。
附图标记说明：
1、定位基座；11、转动机构；12、夹具；121、夹爪；
2、定位治具；21、同心圆；22、刻度线；221、第一刻度线；222、第二刻度线；223、第三刻度线；23、定位面；
3、清洗装置；31、清洗喷嘴；32、调整机构；33、清洗液供给装置；331、第一管路；332、第二管路；333、第一清洗液源；334、第二清洗液源；34、清洗盘；
4、清洗液；
5、晶圆；
X、第一方向；Y、第二方向。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例。下面的详细描述中公开了许多具体细节，以便全面理解本申请。但是，对于本领域 技术人员来说，很明显的是，本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请的更好的理解。本申请决不限于下面所提出的任何具体配置和算法，而是在不脱离本申请的精神的前提下覆盖了元素、部件和算法的任何修改、替换和改进。在附图和下面的描述中，没有示出公知的结构和技术，以便避免对本申请造成不必要的模糊。
图1为本申请相关技术中清洗液滴落在晶圆上的示意图。
在进行半导体加工时，通常会采用化学机械抛光(Chemical Mechanical Polishing，CMP)来对晶圆的表面进行抛光处理，然后再清理残存在晶圆表面上的杂质。如图1所示，在清理晶圆5前，将晶圆5固定在夹具上，再将清洗喷嘴移动至晶圆5的上方。然后清洗喷嘴向晶圆5连续滴落清洗液4，同时通过旋转夹具来旋转晶圆5，从而实现对晶圆5的清洗。如果清洗液的滴落位置相对于晶圆5的中心出现偏差，容易导致晶圆5的表面清洗不均匀或不彻底。相关技术中，通常通过肉眼来判断清洗喷嘴滴落的清洗液是否位于晶圆5的中心，并根据清洗液的偏移量调整清洗喷嘴的位置。由于肉眼判断并不准确，而且效率低，需要花费较多的时间来回调整清洗喷嘴的位置，导致晶圆清洗不彻底，降低了晶圆的清洗效率。
鉴于上述原因，本申请实施例提供了一种晶圆清洗设备及定位治具，该定位治具能够实现清洗喷嘴的定位，使清洗液4能够滴落在晶圆5的中心处，从而提高晶圆5清洗的清洗效果。
图2为本申请一个实施例的晶圆清洗设备的示意图，图3为根据本申请一个实施例的定位治具的俯视结构示意图。
参考图2和图3，本申请实施例提供了一种晶圆清洗设备，包括定位基座1、定位治具2和清洗装置3。
定位基座1包括可转动的夹具12，夹具12用于固定晶圆5。定位基座1作为晶圆5的安装和定位载体使用。定位基座1还包括转动机构11，转动机构11通过夹具12带动晶圆5旋转。
定位治具2可拆卸地固定于夹具12上，定位治具2包括平行于水平面设置的定位面23，定位面23上设置有多个同心圆21和以多个同心圆21的圆心O为基准的刻度线22，且圆心O位于夹具12的旋转中心线上。
清洗装置3与定位基座1相对设置，清洗装置3包括可移动的清洗喷嘴31，清洗喷嘴31能够朝向定位面23滴落液滴，并通过液滴在定位面23上的刻度线22示出的坐标位置与圆心O之间的偏差调整清洗喷嘴的位置，以使液滴落在圆心O上。
可选地，清洗装置3还包括调整机构32，清洗装置3通过调整机构32来调整清洗喷嘴31相对定位基座1的位置。调整机构32可以具有三个自由度，例如在定位面23内的水平方向和竖直方向的两个平移自由度及垂直于定位面23所在平面的竖直方向的平移自由度；或者，具有在定位面23内的某一方向的平移自由度、垂直于定位面23所在平面的竖直方向的平移自由度以及绕竖直方向的轴的旋转自由度。其中，垂直于定位面23所在平面的竖直方向的平移自由度用于将清洗喷嘴31靠近定位面23或者远离定位面23，另外两个自由度用于调整清洗喷嘴31相对于定位面23的位置。
由于定位治具2的定位面23上设置有多个同心圆21和以多个同心圆21的圆心O为基准的刻度线22，可以定量地获得清洗液4液滴落在定位面23上的具体坐标位置，并根据该坐标位置调整清洗喷嘴31相对于夹具12的位置，以使液滴最终滴落于定位面23上的圆心O的位置，从而完成清洗喷嘴31的位置调整。
在完成清洗喷嘴31的位置调整后，将定位治具2从夹具12上拆卸下来，将晶圆5固定于夹具12上，由于清洗喷嘴31与夹具12之间的相对位置已通过定位治具2调整好，且晶圆5的中心与夹具12的旋转中心对齐设置，因此，可以保证定位喷嘴滴落的清洗液4液滴落在晶圆5的中心处。当夹具12在转动机构11的带动下带动晶圆5旋转时，可以使清洗液4均匀地涂覆于晶圆5的整个表面上，提高晶圆5的清洗清洁度和均匀性。
在一些实施例中，夹具12包括沿自身周向均布的至少三个夹爪121。每个夹爪121都能够沿夹具12的径向移动，以同步远离或靠近夹具12的 旋转中心线，从而使得定位治具2的中心或者晶圆5的中心也位于夹具12的旋转中心线上。由此，根据清洗喷嘴31滴落的液滴在定位治具2的定位面23上的坐标位置与圆心O之间的偏差调整清洗喷嘴31的位置，即通过调整机构32调整清洗喷嘴31的位置，以使清洗喷嘴31滴落的清洗液4能够滴落在定位面23的圆心O处，即将清洗喷嘴31移动至夹具12的旋转中心线上，进而可以保证清洗晶圆时清洗液4能够滴落在晶圆5的中心处。
在一些实施例中，清洗装置3还包括清洗液供给装置33，清洗液供给装置33用于为清洗装置3提供清洗液4。清洗液供给装置33包括第一管路331、第二管路332、第一清洗液源333和第二清洗液源334。第一管路331的一端与清洗喷嘴31连通，另一端与第一清洗液源333连通。第二管路332的一端与清洗喷嘴31连通，另一端与第二清洗液源334连通。示例性地，清洗液4可以为混合热氮气的去离子水，第一清洗液源333为氮气源，第二清洗液源334为去离子水源。热氮气和去离子水在清洗喷嘴31中混合并一同滴落在晶圆5上，用于清洗晶圆5。
本申请实施例提供的一种晶圆清洗设备，包括定位基座1、定位治具2和清洗装置3，定位治具2可拆卸地固定于定位基座1的可转动夹具12上，清洗装置3的清洗喷嘴31与定位基座1相对设置。定位治具2的定位面23上设有多个同心圆21和以多个同心圆21的圆心O为基准的刻度线22。在将定位治具2固定在定位基座1的夹具12上后，使清洗喷嘴31向定位治具2滴落清洗液4，获得清洗液4在定位治具2上的落点。根据定位面23上的同心圆21和刻度线22，定量地获取清洗喷嘴31相对夹具12的旋转中心线的偏差量，从而调整夹具12与清洗喷嘴31之间的相对位置，使得清洗喷嘴31流出的清洗液4能够滴落在晶圆5的中心，保证晶圆5表面清洗的均匀性和彻底性，从而提高了晶圆5生产的合格率。
进一步地，清洗装置3还包括清洗盘34，清洗喷嘴31贯穿清洗盘34设置。
清洗盘34可以采用透明材质制成，例如聚碳酸酯PC或者玻璃。在进行清洗喷嘴31的定位过程中，可以通过透明的清洗盘34来观察定位治具 2上液滴的落点位置，以获取液滴在定位面23上的坐标位置与圆心O之间的偏差量，进而通过调整机构32调整清洗喷嘴31的位置。
另外，调整机构32还用于调整清洗喷嘴31沿垂直于定位治具2方向的高度尺寸。在清洗晶圆5时，将清洗盘34靠近晶圆5的表面，清洗喷嘴31贯穿清洗盘34设置，清洗喷嘴31滴落的液滴在清洗盘34与定位治具2的定位面23之间形成一层液膜。随着夹具12带动晶圆5转动，液膜在晶圆5的整个表面上由圆心O处逐渐向外呈环形铺开，从而清洗液可以均匀地铺满晶圆5的整个表面，提高晶圆的清洗效果。在完成清洗喷嘴31的定位后，调整机构32驱动清洗喷嘴31沿垂直于定位面23的方向(竖直方向)远离定位治具2，以方便将定位治具2从夹具12上取下，同时方便将晶圆5固定在夹具12上。在将晶圆5固定在夹具12上后，调整机构32驱动清洗喷嘴31靠近晶圆5，清洗晶圆5。
下面结合附图进一步详细描述定位治具2的具体结构。
在一些实施例中，定位面23上的多个同心圆21沿自身径向等间距分布。多个同心圆21沿自身径向等距分布，可以更容易地确定相邻的两个同心圆21之间的距离，当清洗液的液滴滴落于两个同心圆21之间时，不需要通过详细的刻度线数值即可估算出该液滴的坐标位置。
在一些实施例中，定位治具2的刻度线22包括多个刻度标记，相邻的两个刻度标记之间的距离呈毫米级或者微米级设置。如果晶圆清洗设备的定位精度要求较高，相邻的两个刻度标记之间的距离设置为微米级，例如1μm。如果晶圆清洗设备的定位精度要求较低，相邻的两个刻度标记之间的距离设置为毫米级，例如1mm，从而提高清洗喷嘴31的定位精度。
图4为图3所示的定位治具2获取液滴的坐标位置的场景示意图。
在一些实施例中，如图4所示，定位治具2的刻度线22包括第一刻度线221和第二刻度线222，第一刻度线221经过圆心O且沿第一方向X延伸，第二刻度线222沿多个同心圆21的圆周方向间隔分布。
可选地，第一方向X为在定位面23内的水平方向。可选地，第一方向X为在定位面23内的竖直方向。以第一方向X为在定位面23内的水平方向为例进行说明。
如图3和图4所示，定位治具2的刻度线22包括第一刻度线221和第二刻度线222。第一刻度线221经过圆心O且沿第一方向X延伸，第一刻度线221能够定量显示定位面23上任一位置到同心圆21的圆心O的径向偏差距离L0。当清洗液的液滴滴落在定位面23上的某一点时，液滴的落点通过同心圆21来转换成第一刻度线221上的某一点，从而定量地获得定位面23上该点到同心圆21的圆心O的径向距离L0。第二刻度线222沿多个同心圆21的圆周方向间隔分布，第二刻度线222能够定量显示定位面23上任一位置与同心圆21的圆心O的连线与第一方向X的周向角度θ。根据该液滴在定位面23上的落点，可以获取落点与同心圆21的圆心O的连线，由于第二刻度线222沿同心圆21的周向间隔设置，因此该连线与第一刻度线221之间的夹角，即为该连线与第一方向X的周向角度θ。在获取了径向距离L0和周向角度θ后，可以根据径向距离L0和周向角度θ确定液滴在定位面23上的坐标位置，进而可以通过调整机构32调整清洗喷嘴31的位置，使清洗喷嘴31能够移动至夹具12的旋转中心线上，实现对清洗喷嘴31的定位。
例如，某一液滴滴落在定位治具2上，其落点对应于第二刻度线的周向角度θ＝+30°和径向距离L0＝5mm，那么其落点在定位面23上的位置坐标为(4.33，2.5)。如果调整机构32具有如前所述的三个方向的平移自由度，通过调整机构32可以先将清洗喷嘴31沿第一方向X朝向圆心O移动L1＝4.33mm，再将清洗喷嘴31沿第二方向Y朝向圆心O移动L2＝2.5mm，或者，先将清洗喷嘴31沿第二方向Y朝向圆心O移动L2＝2.5mm，再将清洗喷嘴31第一方向X朝向圆心O移动L1＝4.33mm，即可将清洗喷嘴31移动至圆心O的正上方，实现清洗喷嘴31的定位。如果调整机构32具有如前所述的两个方向平移自由度和绕一个轴的旋转自由度，则调整机构32可以先将清洗喷嘴31绕竖直方向的轴旋转θ＝+30°，再将清洗喷嘴31朝向圆心O沿径向移动径向距离L0＝5mm，即可将清洗喷嘴31移动至圆心O的正上方，实现清洗喷嘴31的定位。
图5为图3所示的定位治具与夹具的组装效果示意图。
参考图5，可选地，定位治具2为板状结构，形状为圆形或者正多边 形。考虑到夹具12的夹爪121能够同步地靠近或远离夹具12的旋转中心线，当定位治具2被夹爪121加持时，定位治具2的中心处位于夹具12的旋转中心线上。此时同心圆21的圆心O与定位治具2的中心重合，即定位治具2为旋转对称的结构，能够降低定位治具2的加工难度。示例性地，当定位治具2为圆形时，夹具12可以夹持定位治具2的任意位置；当定位治具2为正多边形时，正多边形例如可以为正方形、正六边形等，正多边形的边数应当为夹爪121个数的整数倍，夹爪121夹持正多边形的侧边处。例如，参考图5，夹爪121的数量为3个，定位治具2为正六边形，边数为夹爪121个数的2倍，夹爪121夹住定位治具2的侧边。
考虑到定位治具2为板状结构，板状结构的边缘可能会划伤晶圆5，也可能对其他物品或操作人员造成安全隐患，本申请实施例中，板状结构的边缘设有倒角。
图6为根据本申请另一替代实施例的定位治具2的俯视结构示意图，图7为图6所示的定位治具2获取液滴的坐标位置的场景示意图。
如图6和图7所示，本申请另一替代实施例还提供了一种定位治具2，其与图3至图5所示的结构类似，不同之处在于，刻度线22的设置方式不同。
具体来说，定位治具2的刻度线22包括第一刻度线221和第三刻度线223，第一刻度线221经过圆心O且沿第一方向X延伸，第三刻度线223经过圆心O且沿第二方向延伸，第一方向X与第二方向相交设置。
可选地，第一方向X与第二方向Y之间呈直角设置，此时，第一刻度线221和第三刻度线223形成的坐标系为平面直角坐标系。相对于非直角坐标系，更容易获取定位面23上某一点的坐标。此外，考虑到清洗喷嘴31的调整机构32通常采用正交的多自由度的形式来移动清洗喷嘴31，当第一方向X和第二方向Y互相垂直时，定位面23上某一点的坐标更容易转换为调整机构32的移动量。
参考图6和图7，第一刻度线221和第三刻度线223在定位面23内形成坐标系，同心圆21的圆心O为该坐标系的原点。定位面23内任一点的位置都能够转换成相对第一方向X和第二方向Y的坐标。根据坐标即可定 量地获得该点相对原点沿第一方向X的第一偏差量L1和第二方向Y的第二偏差量L2。在获得了沿第一方向X的第一偏差量L1和第二方向Y的第二偏差量L2后，只需要根据L1、L2，通过调整机构32驱动清洗喷嘴31沿第一方向X移动距离L1及沿第二方向Y移动距离L2，从而能够使清洗喷嘴31能够移动至夹具12的旋转中心线上，实现对清洗喷嘴31的定位。例如，某液滴滴落在定位治具2的定位面23上，可以直接根据液滴的落点，通过第一刻度线221和第三刻度线223获得该落点在定位面23上的坐标(3，4)，获取沿第一方向X的第一偏差量L1＝3mm，第二方向Y的第二偏差量L2＝4mm，那么将清洗喷嘴31沿第一方向X朝向同心圆21的圆心O移动3mm、沿第二方向朝向同心圆21的圆心O移动4mm，可使得清洗喷嘴31位于同心圆21的圆心O的上方，即清洗喷嘴31位于夹具12的旋转中心线上。
需要说明的是，定位治具2可以同时包括第一刻度线221、第二刻度线222和第三刻度线223。在调整清洗喷嘴31位置时，可以选用第一刻度线221和第二度线配合或第一刻度线221和第三刻度线223配合。此外，第一方向X可以为定位面23内的任意方向。优选地，为了简化调整机构32对清洗喷嘴31的位置移动量计算，第一方向X为在定位面23内的水平方向或者竖直方向。
下面描述本申请上述实施例的晶圆清洗设备的使用方法。
在使用本申请实施例的晶圆清洗设备时，包括清洗喷嘴31的定位过程和晶圆5的清洗过程。
清洗喷嘴31定位过程包括：
步骤S1.1、先通过夹具12固定定位治具2，再将清洗喷嘴31移动至定位治具2的上方；
步骤S1.2、使清洗喷嘴31滴流清洗液4，并记录清洗液4液滴在定位治具2上的落点；
步骤S1.3、根据落点在定位面23上的刻度线22示出的坐标位置与圆心O之间的偏差获得清洗喷嘴31在第一方向X和第二方向Y上的移动量；
步骤S1.4、根据清洗喷嘴31在第一方向X和第二方向Y上的移动量，通过调整机构32移动清洗喷嘴31，使清晰喷嘴31位于夹具12的旋转中心线上；
步骤S1.5、通过调整机构32使清洗喷嘴31沿直至于定位面23的方向远离定位治具2，将定位治具2从夹具12上取下。
上述步骤S1.1至步骤S1.4至少重复进行一次，使清洗液4液滴落在圆心O上，完成清洗喷嘴31在定位面23上的定位过程。此时，清洗喷嘴31位于夹具12的旋转中心线上。
晶圆5的清洗过程包括：
步骤S2.1、将待清洗的晶圆5固定至夹具12上；
步骤S2.2、通过调整机构将清洗喷头31向下移动靠近晶圆5；
步骤S2.3、开启清洗装置3，使清洗喷嘴31连续滴流清洗液4；
步骤S2.4、旋转夹具12，对晶圆5进行清洗。
由于清洗液4滴落在晶圆5的中心处，使得整个晶圆5的表面都能够进行充分均匀的清洗，使得本申请实施例的晶圆清洗设备具备良好的清洗效果。
图8为使用本领域相关技术与使用本申请实施例的晶圆清洗设备的缺陷率对比示意图。
使用本申请实施例的晶圆清洗设备连续进行晶圆5清洗，并每100万片晶圆5作为一组。每完成一组晶圆5的清洗，对该组晶圆5进行一次检测，并记录存在缺陷的晶圆5的片数，获得晶圆5的缺陷率。参考图8，前7组均使用本申请的相关技术进行晶圆5清洗，从第8组开始使用本申请实施例的晶圆清洗设备，先进行清洗喷嘴31定位再进行晶圆5清洗。前7组的晶圆5缺陷率平均为13.85片/10 6片(13.85ea/M)，使用本申请实施例后，第8组至第12组的晶圆5缺陷率平均为9.2片/10 6片(9.2ea/M)，整体的缺陷率降低了约33％。本申请实施例的晶圆清洗设备通过提升对晶圆5的清洗效果，明显地降低了晶圆5的缺陷率。
由此，本申请实施例提供了一种晶圆清洗设备，通过定位治具2的定位面23上设置多个同心圆21和以多个同心圆21的圆心O为基准的刻度线 22，来提高晶圆5的清洗效果以外。本申请实施例的晶圆清洗设备还可以通过第一刻度线221和第二刻度线222结合，或者通过第一刻度线221和第三刻度线223的结合，更加准确地定量获取清洗喷嘴31相对同心圆21的圆心O的偏移量，能够进一步提高清洗喷嘴31的定位精度，最终进一步提高晶圆5的清洗效果。
本领域技术人员应能理解，上述实施例均是示例性而非限制性的。在不同实施例中出现的不同技术特征可以进行组合，以取得有益效果。本领域技术人员在研究附图、说明书及权利要求书的基础上，应能理解并实现所揭示的实施例的其他变化的实施例。在权利要求书中，术语“包括”并不排除其他装置或步骤；物品没有使用数量词修饰时旨在包括一个/种或多个/种物品，并可以与“一个/种或多个/种物品”互换使用”；术语“第一”、“第二”用于标示名称而非用于表示任何特定的顺序。权利要求中的任何附图标记均不应被理解为对保护范围的限制。权利要求中出现的多个部分的功能可以由一个单独的硬件或软件模块来实现。某些技术特征出现在不同的从属权利要求中并不意味着不能将这些技术特征进行组合以取得有益效果。

Claims (10)

  1. 一种晶圆清洗设备，包括：
    定位基座，包括可转动的夹具，所述夹具用于固定晶圆；
    定位治具，可拆卸地固定于所述夹具上，所述定位治具包括平行于水平面设置的定位面，所述定位面上设置有多个同心圆和以所述多个同心圆的圆心为基准的刻度线，且所述圆心位于所述夹具的旋转中心线上；以及
    清洗装置，与所述定位基座相对设置，所述清洗装置包括可移动的清洗喷嘴，所述清洗喷嘴能够朝向所述定位面滴落液滴，并通过所述液滴在所述定位面上的所述刻度线示出的坐标位置与所述圆心之间的偏差调整所述清洗喷嘴的位置，以使所述液滴落在所述圆心上。
  2. 根据权利要求1所述的晶圆清洗设备，其中，所述定位治具的所述刻度线包括第一刻度线和第二刻度线，所述第一刻度线经过所述圆心且沿第一方向延伸，所述第二刻度线沿所述多个同心圆的圆周方向间隔分布。
  3. 根据权利要求1所述的晶圆清洗设备，其中，所述定位治具的所述刻度线包括第一刻度线和第三刻度线，所述第一刻度线经过所述圆心且沿第一方向延伸，所述第三刻度线经过所述圆心且沿第二方向延伸，所述第一方向与所述第二方向相交设置。
  4. 根据权利要求3所述的晶圆清洗设备，其中，所述第一方向与所述第二方向之间呈直角设置。
  5. 根据权利要求2至4任一项所述的晶圆清洗设备，其中，所述第一方向为在所述定位面内的水平方向或者竖直方向。
  6. 根据权利要求1所述的晶圆清洗设备，其中，所述定位面上的所述多个同心圆沿自身径向等间距分布。
  7. 根据权利要求1所述的晶圆清洗设备，其中，所述定位治具的所述刻度线包括多个刻度标记，相邻的两个所述刻度标记之间的距离呈毫米级或者微米级设置。
  8. 根据权利要求1所述的晶圆清洗设备，其中，所述定位治具为板状结构，形状为圆形或者正多边形。
  9. 根据权利要求1所述的晶圆清洗设备，其中，所述清洗装置还包括清洗盘，所述清洗喷嘴贯穿所述清洗盘设置。
  10. 一种定位治具，所述定位治具包括平行于水平面设置的定位面，所述定位面上设置有多个同心圆和以所述多个同心圆的圆心为基准的刻度线。
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