WO2022193492A1 - 一种hemt射频器件及其制作方法 - Google Patents

一种hemt射频器件及其制作方法 Download PDF

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Publication number
WO2022193492A1
WO2022193492A1 PCT/CN2021/105294 CN2021105294W WO2022193492A1 WO 2022193492 A1 WO2022193492 A1 WO 2022193492A1 CN 2021105294 W CN2021105294 W CN 2021105294W WO 2022193492 A1 WO2022193492 A1 WO 2022193492A1
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Prior art keywords
comb
gate
barrier layer
tooth
layer
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PCT/CN2021/105294
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English (en)
French (fr)
Inventor
刘胜厚
蔡文必
孙希国
蔡仙清
张辉
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厦门市三安集成电路有限公司
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Publication of WO2022193492A1 publication Critical patent/WO2022193492A1/zh
Priority to US18/353,469 priority Critical patent/US20230361186A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Definitions

  • the invention relates to the field of semiconductor devices, in particular to a HEMT radio frequency device and a manufacturing method thereof.
  • 5G communication technology is the latest generation of cellular mobile communication technology, which is an extension of 4G (LTE-A, WiMax), 3G (UMTS, LTE) and 2G (GSM) systems.
  • 5G communication technology will be widely used in smart home, telemedicine, distance education, industrial manufacturing, and the Internet of Things, including gigabit mobile broadband data access, 3D video, high-definition video, cloud services, augmented reality (AR), virtual Typical business applications such as reality (VR), industrial manufacturing automation, emergency rescue, autonomous driving, and modern logistics.
  • high-definition video, AR, VR, telemedicine, industrial manufacturing automation, modern logistics management, etc. mainly occur in indoor scenes of buildings.
  • GaN gallium nitride
  • GaN has the advantages of wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate and higher radiation resistance, and has a very broad application in high temperature, high frequency and microwave high power semiconductor devices. application prospects. Low ohmic contact resistance is critical for output power, high efficiency, high frequency and noise performance.
  • GaN has been widely used in the RF industry due to its higher power output and smaller footprint at high frequencies.
  • GaN HEMT RF devices are lateral planar devices.
  • the transconductance (gm) of GaN HEMT devices varies with gate voltage (Vgs). As the gate input voltage increases, the transconductance When gm decreases, the corresponding gain decreases; transconductance gm refers to the ratio between the change value of the output current and the change value of the input voltage.
  • the nonlinearity of the PA leads to significant band-edge leakage, premature output power saturation, signal distortion, etc. , which affects the characteristics of the system and increases the complexity of the system design.
  • the purpose of the present invention is to provide a HEMT radio frequency device and a manufacturing method thereof in view of the problems of the prior art.
  • a HEMT radio frequency device comprising a substrate, a buffer layer, a channel layer, and a potential barrier layer that are sequentially stacked from bottom to top, wherein the channel layer and the potential barrier layer form a heterojunction; a source electrode and a drain electrode at the upper active region, and a gate electrode, the gate electrode includes a comb-teeth gate structure disposed at the gate region between the source electrode and the drain electrode at the active region; the comb-teeth The gate structure includes a comb handle part and at least two or more comb tooth parts, the comb tooth part is connected with the comb handle part, and the comb tooth parts are arranged at intervals; the comb handle part is arranged on the barrier layer and is connected with the comb handle part.
  • the source or drain is parallel; the spacing between several adjacent comb teeth along the gate width direction is irregularly distributed, that is, the comb teeth are unevenly arranged, including at least two or more different phases.
  • the gate is arranged symmetrically along the gate length direction, that is, the comb tooth portion is symmetrically arranged along the gate length direction; the transverse cross-section of the comb tooth portion in the gate length direction is smaller than the gate region in the gate length direction. Size; the transverse section of the comb tooth portion includes any one of circle, ellipse, rectangle, square, racetrack, and polygon.
  • the thickness of the barrier layer ranges from 3 nm to 50 nm
  • the comb-tooth portion penetrates the barrier layer and penetrates deep into the channel layer
  • the comb-tooth portion penetrates deep into the channel layer
  • the depth ranges from 1 nm to 200 nm, and the depth range refers to the distance from the surface of the channel layer to the bottom of the comb tooth portion.
  • the size of the transverse cross-section of the comb-tooth portion in the gate width direction ranges from 20 nm to 1000 nm.
  • the HEMT radio frequency device is a gallium nitride based HEMT radio frequency device.
  • the cross section of the comb handle portion in the middle of the adjacent comb tooth portions is T-shaped, and the gate metal layer of the grid at this place includes a grid cap and a comb handle grid foot.
  • the bottom of the shank foot is on the surface of the barrier layer.
  • the cross section of the comb tooth portion is T-shaped, and the gate metal layer of the gate here includes a gate cap and a comb tooth grid foot, and the bottom of the comb tooth grid foot is located at the potential. within the barrier.
  • the cross section of the comb handle portion in the middle of the adjacent comb tooth portions is T-shaped, and the gate metal layer of the gate at this place includes the gate electrode.
  • a cap and a comb handle grid foot, the bottom of the comb handle grid foot is located on the surface of the barrier layer;
  • the cross section of the comb tooth portion is T-shaped, and the gate metal layer of the grid at this place includes a grid cap and a comb tooth grid foot , the bottom of the comb-tooth gate foot is located in the channel layer.
  • the present invention also provides a manufacturing method of the HEMT radio frequency device, comprising the following steps:
  • Step 1 forming a channel layer, a buffer layer, and a barrier layer in sequence on the semiconductor substrate;
  • Step 2 depositing a dielectric layer on the barrier layer
  • Step 3 in the etching of the dielectric layer, the source region window and the drain region window are correspondingly formed in the source region and the drain region above the barrier layer;
  • Step 4 forming ohmic contact metal on the window of the source region and the window of the drain region, and annealing at high temperature to form the source and the drain;
  • Step 5 Through a photolithography process, a plurality of grooves are formed in the barrier layer at the gate region between the source electrode and the drain electrode at the active region along the gate width direction, at least two or more of the plurality of grooves are formed.
  • the groove depths of the two or more grooves are the same; the gate is arranged on the barrier layer of the gate region and on the groove; a plurality of grooves are irregularly arranged along the width direction of the grid, and a plurality of adjacent comb teeth are arranged between each other.
  • the spacing between them is irregularly distributed, at least including the spacing between two or more different adjacent comb teeth; the groove depth is greater than or equal to half the thickness of the barrier layer;
  • Step 6 Obtain a gate area window through a photolithography process, form a Schottky contact metal on the gate area window, and form a gate, the gate includes a source electrode and a drain electrode disposed at the active region.
  • the present invention also provides another method for fabricating a HEMT radio frequency device, which is different from the above solution in that in step 5, a gate is formed between the source electrode and the drain electrode at the active region through a photolithography process.
  • the barrier layer at the pole region forms several grooves along the gate width direction, the grooves pass through the barrier layer and go deep into the channel layer, and the depth of the groove deep into the channel layer is 1 nm-200 nm, the groove depth range refers to the distance from the surface of the channel layer to the bottom of the groove.
  • the HEMT radio frequency device and the manufacturing method thereof provided by the present invention have the following beneficial effects:
  • the same groove depth is formed under the gate region of the same device to form comb teeth of the same length, which are distributed along the gate width direction to form the source disposed at the active region.
  • the comb-tooth gate structure between the pole and the drain electrode; the comb-tooth gate structure comprises a comb handle part and at least two or more comb tooth parts, the comb tooth parts are arranged at intervals, and the adjacent comb tooth parts are along the The spacing between adjacent comb teeth in the gate width direction is randomly arranged and distributed.
  • the grid between the i-th comb-tooth part and the i+1-th comb-tooth part is the gate of a region, and the j-th comb-tooth part to the j+1-th comb Between the teeth is the gate of another region (where i ⁇ j), which ensures that the drain current is evenly distributed when the overall device is in the open state, and at the same time, the smoothness of the transconductance of the device is achieved, so that the device can follow the radio frequency operation. As the input power increases, the gain of the device remains unchanged and the linearity improves.
  • the comb-tooth portion of the present invention penetrates the barrier layer and penetrates deep into the channel layer, and the comb-tooth portion passes through the two-dimensional electron gas layer and enters the device channel layer, so that the longitudinal dimension Enhance the control of the gate on the channel; distribute along the gate width direction to form a comb-tooth gate structure disposed between the source 5 and the drain 6 at the active region 100;
  • the comb-tooth gate structure includes a comb The handle portion and at least two or more comb tooth portions, the comb tooth portions are arranged at intervals, and the spacing between adjacent comb tooth portions along the grid width direction is randomly arranged and distributed, and the i-th comb tooth portion is arranged randomly.
  • a gate of a region Between the i+1 th comb tooth portion is a gate of a region, and between the j th comb tooth portion and the j+1 th comb tooth portion is a gate electrode of another region (where i ⁇ j).
  • Arbitrary arrangement of spacing can prevent the current from being located in the local part of the device when the device is turned on, and ensure that the drain current is evenly distributed when the overall device is in the on state.
  • the successive conduction of different regions under the gate makes the transconductance of the device in a stable region, so that the device gain remains unchanged and the linearity is improved with the increase of input power during radio frequency operation.
  • Fig. 1 is a graph showing the variation of transconductance with gate voltage of an existing GaN HEMT radio frequency device
  • FIG. 2 is a schematic diagram 1 of a HEMT radio frequency device in Embodiment 1 of the present invention (wherein the small rectangular dotted line frame represents the comb tooth portion);
  • FIG. 3 is a schematic cross-sectional view along the B1 direction of the schematic diagram 1 of the HEMT radio frequency device in the first embodiment of the present invention
  • FIG. 4 is a schematic cross-sectional view along the A1 direction of the schematic diagram 1 of the HEMT radio frequency device in the first embodiment of the present invention
  • FIG. 5 is a schematic cross-sectional view along the A2 direction of the schematic diagram 1 of the HEMT radio frequency device in the first embodiment of the present invention
  • FIG. 6 is a schematic cross-sectional view along the B1 direction of the schematic diagram 1 of the HEMT radio frequency device in the second embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view along the A1 direction of the schematic diagram 1 of the HEMT radio frequency device according to the second embodiment of the present invention.
  • the terms “upper”, “lower”, “left”, “right”, “vertical”, “horizontal”, “inner”, “outer”, etc. indicate the orientation or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship that the product of the invention is usually placed when it is used. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the device referred to. Or elements must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention. Furthermore, the terms “first”, “second”, “third”, etc. are only used to differentiate the description and should not be construed as indicating or implying relative importance.
  • the HEMT radio frequency device of the present invention includes a substrate 1, a buffer layer 2, a channel layer 3, and a barrier layer 4 sequentially stacked from bottom to top, and the channel layer and the barrier layer are formed Heterojunction; also includes a source electrode 5 and a drain electrode 6 oppositely disposed at the active region above the barrier layer, and a gate electrode 7, the gate electrode includes a source electrode 5 and a drain electrode disposed at the active region 100
  • the comb-tooth gate structure at the gate region between The comb part is connected to the comb handle; the comb handle 71 is arranged on the barrier layer and is parallel to the source or drain electrode, the comb tooth part 72 penetrates into the barrier layer, and the comb tooth part penetrates into the barrier layer , the depths of the comb-tooth portions 72 into the barrier layer are equal, and the depth of the comb-tooth portions 72 into the barrier layer is greater than or equal to half the thickness of the barrier layer; the comb-tooth portions 72 are adjacent to the comb-tooth along
  • Linear and regular arrangement that is, the spacing between adjacent comb-tooth parts along the grid width direction is sometimes wide and narrow; the spacing between several adjacent comb-tooth parts along the grid width direction is regularly distributed as a number of combs The spacing between adjacent comb teeth along the grid width direction is gradually widened, gradually narrowed, or arranged at equal intervals.
  • FIG. 3 a schematic cross-sectional view along the B1 direction, the plurality of comb-tooth portions 72 are symmetrically arranged along the grid length direction.
  • six comb-tooth portions are used as an example for description.
  • the first comb-tooth portion and the second comb-tooth portion The distance between the parts is s1, the distance between the second comb-tooth part and the third comb-tooth part is s2, the distance between the third comb-tooth part and the fourth comb-tooth part is s3, and the fourth comb-tooth part and the The distance between the fifth comb-tooth portion is s4, the distance between the fifth comb-tooth portion and the sixth comb-tooth portion is s5, and s1, s2, s3, s4, and s5 are not equal to each other, where S4>S1 >S2>S3>S5.
  • the size of the transverse cross-section of the comb tooth portion in the gate width direction ranges from 20 nm to 1000 nm, as shown in the icons a in FIGS. 2 and 3 .
  • the cross-sectional interface of the comb-tooth portion 72 is a rectangle (such as the dotted line 72 of the gate 7 in FIG. 2 ), and the dimension x of the transverse cross-section of the comb-tooth portion 72 in the gate length direction is smaller than that of the gate region in the gate length direction.
  • the size of x0 that is, x ⁇ x0
  • the value range of x/x0 is 0.6-0.9.
  • the cross-sectional interface of the comb-tooth portion 72 of the present invention is a rectangle, which is a preferred embodiment, and may be in a shape including a circle, an ellipse, a rectangle, a square, a racetrack, and a polygon.
  • the HEMT radio frequency device of the present invention is a nitride HEMT radio frequency device.
  • a heterojunction channel can be formed between the channel layer and the barrier layer, so that a two-dimensional electron gas can be formed at the contact interface between the two.
  • the channel layer may be a gallium nitride material and the barrier layer may be an aluminum gallium nitride material.
  • the channel layer and the barrier layer constituting the heterojunction structure may also be a gallium nitride material and an indium gallium nitride material, etc., and here the specific materials of the channel layer and the barrier layer are There is no limitation as long as a heterojunction structure can be formed.
  • the barrier layer may be AlGaN, aluminum nitride, aluminum indium nitride, aluminum gallium nitride, indium gallium nitride or aluminum indium gallium nitride, etc., and the thickness of the barrier layer ranges from 3 nm to 50 nm.
  • FIG. 4 is a schematic cross-sectional view along the A1 direction, the cross-sectional schematic view of the gate at this place is T-shaped, and the gate foot of the gate is inserted into the barrier layer, that is, the comb-tooth portion 72 is along the gate length direction.
  • the cross-section of the gate metal layer is a T-shaped structure, and the gate metal layer at the comb-tooth portion 72 includes a gate cap and a comb-tooth gate foot, where the bottom of the comb-tooth gate foot is located in the barrier layer, and the edge of the gate cap is in contact with the potential.
  • a dielectric layer is arranged between the barrier layers.
  • the cross-sectional schematic view of the gate is T-shaped, and the bottom of the gate foot is located on the surface of the barrier layer. That is, the cross-section of the gate metal layer along the gate length direction between the adjacent comb tooth portions is a T-shaped structure, including a gate cap and a comb handle gate foot, and the bottom of the comb handle gate foot is arranged on the upper surface of the barrier layer. On the top, a dielectric layer is arranged between the edge of the gate cap and the barrier layer.
  • the substrate 1 may be silicon (Si), silicon carbide (SiC), or sapphire (Saphhire), the buffer layer 2 is a GaN layer, and the channel layer is a GaN layer.
  • the barrier layer is an AlGaN layer, and the thickness of the barrier layer is 3 nm to 50 nm;
  • the substrate 1 is silicon with a thickness of 100 ⁇ m; the buffer layer 2 is a GaN layer; the channel layer 3 is a GaN layer with a thickness of 50 nm; the barrier layer 4 is an AlGaN layer , the thickness of the barrier layer is 30 nm; the buffer layer contains GaN material, and a nitride nucleation layer (not shown) and a nitride buffer layer are arranged between the substrate and the nitride channel layer.
  • the source electrode 5 and the drain electrode 6 may partially penetrate into the barrier layer, or the source electrode 5 and the drain electrode 6 may be disposed on the barrier layer.
  • the substrate 1 is sapphire with a thickness of 60 ⁇ m; the buffer layer 2 is a GaN layer; the channel layer 3 is a GaN layer with a thickness of 50 nm; the barrier layer 4 is an AlGaN layer.
  • the present invention also enumerates a manufacturing method of a GaN HEMT radio frequency device according to an embodiment, which specifically includes the following steps:
  • AlGaN barrier layer 4 On the GaN channel layer 3, grow an AlGaN barrier layer 4 with a thickness of 20 nm;
  • the windows required for etching are formed in the source and drain regions by a photolithography process, and the Si 3 N 4 thin film dielectric layer 8 in the source and drain regions is removed by a reactive ion etching process to form the source and drain regions windows;
  • ohmic contact metal such as Ti/Al/Ni/Au or Ti/Al/Mo/Au
  • a number of adjacent grooves are formed at the barrier layer at the gate region of the active region by a photolithography etching process, and the depth of each groove is the same; a number of adjacent grooves at the active region; reference As shown in Figure 2, in this embodiment, six grooves are provided, the distance between the first groove and the second groove is s1, the distance between the second groove and the third groove is s2, and the distance between the third groove and the fourth groove is s2.
  • the distance between the grooves is s3, the distance between the fourth groove and the fifth groove is s4, and the distance between the fifth groove and the sixth groove is s5, where S4>S1>S2>S3>S5, in the embodiment of the present invention, Including more than three different distances between adjacent comb tooth parts, specifically the distance between five different adjacent comb tooth parts;
  • a gate area window is obtained by a photolithography process, Schottky contact metals Ni and Au are formed on the gate area window, and a gate 7 is formed, which is located between the source 5 and the drain 6 of the active area 100
  • the comb-tooth gate structure includes a plurality of comb-tooth portions 72 with irregularly distributed spacings between adjacent comb-tooth portions along the gate width direction, including at least two or more different spacings between adjacent comb-tooth portions; The plurality of comb tooth portions 72 are symmetrically arranged along the grid length direction.
  • the cross-sectional interface of the comb-tooth portion 72 is rectangular, and the dimension of the transverse cross-section of the comb-tooth portion 72 in the gate length direction is smaller than the dimension of the gate region in the gate length direction, that is, x ⁇ x0.
  • the same groove depth is formed under the gate region of the same device, distributed along the gate width direction, and formed between the source electrode 5 and the drain electrode 6 disposed at the active region 100
  • the spacings between adjacent comb-tooth parts are randomly arranged and distributed, the grid between the i-th comb-tooth part and the i+1-th comb-tooth part is a grid of a region, and the area between the j-th comb-tooth part to the j+1-th comb-tooth part is the grid of a region.
  • the gap is the gate of another region (where i ⁇ j), which ensures that the drain current is evenly distributed when the overall device is in the on state, and at the same time realizes the flatness of the transconductance of the device, so that the device can follow the input power during RF operation. increase, the device gain remains the same and the linearity improves.
  • the HEMT radio frequency device of this embodiment is a nitride HEMT radio frequency device.
  • the difference from the first embodiment is that further, the comb-tooth portion penetrates the barrier layer and penetrates deep into the channel layer; the thickness of the barrier layer is d0, the value is, the thickness of the channel layer ranges from 5 nm to 1000 nm, the depth range d of the comb-tooth portion deep into the channel layer is 1 nm to 200 nm, and the depth of the comb-tooth portion deep into the channel layer is 1 nm to 200 nm.
  • the spacing between adjacent comb teeth of a plurality of comb teeth 72 is irregularly distributed along the grid width direction, including at least two or more different spacings between adjacent comb teeth; irregular distribution, that is, random distribution Arrangement, there is no linear regular arrangement; irregular arrangement refers to non-linear regular arrangement, that is, the spacing between adjacent comb tooth parts along the grid width direction is sometimes wide or narrow; The spacing between several adjacent comb teeth in the direction is regularly distributed such that the spacing between adjacent comb teeth along the grid width direction gradually widens, gradually narrows or is equally spaced, as shown in Figure 6 -7, the present invention will not be repeated here.
  • the manufacturing method of a nitride HEMT radio frequency device of this embodiment is the same as that of the first embodiment, and the difference lies in step 7),
  • step 7 through the photolithography process, several grooves (the depth of the groove is d0+d) are formed in the barrier layer at the gate region between the source electrode and the drain electrode at the active region along the gate width direction. , that is, the groove depth ranges from 4 nm to 250 nm), the groove passes through the barrier layer and goes deep into the channel layer, and the depth d of the groove deep into the channel layer ranges from 1 nm to 200 nm.
  • the semiconductor manufacturing process of the HEMT radio frequency device of the present invention realizes that the same groove depth is formed under the gate region of the same device, and the groove depth passes through the two-dimensional electron gas layer and enters the device channel layer.
  • the upper enhanced gate controls the channel; distributed along the gate width direction, a comb-tooth gate structure disposed between the source and the drain at the active region is formed; the comb-tooth gate structure includes a comb handle portion and at least two or more comb-tooth parts, the comb-tooth parts are arranged at intervals, and the spacing between adjacent comb-tooth parts along the grid width direction between adjacent comb-tooth parts is randomly arranged and distributed.
  • i+1 comb-tooth portion is a gate of one region
  • jth comb-tooth portion to the j+1-th comb-tooth portion is a gate of another region (where i ⁇ j).
  • Arbitrary arrangement of spacing can prevent the current from being located in the local part of the device when the device is turned on, and ensure that the drain current is evenly distributed when the overall device is in the on state.
  • the successive conduction of different regions under the gate makes the transconductance of the device in a stable region, so that the device gain remains unchanged and the linearity is improved with the increase of input power during radio frequency operation.

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Abstract

本发明涉及一种HEMT射频器件及其制作方法，该器件包含从下至上依次层叠设置的衬底、缓冲层、沟道层、势垒层，栅极包括梳齿栅极结构；梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，梳齿部与梳柄部相连，梳齿部间隔设置；梳柄部设置于势垒层上并与源极或漏极平行；沿着栅宽方向若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；梳齿部深入势垒层或沟道层中，本发明的间距任意排列可避免器件在导通时电流位于器件的局部，保证总体器件在开态时，漏极电流均匀分布。同时，栅极下方不同区域的接连导通，使器件的跨导处于平稳区，使器件在射频工作时随着输入功率的增加，器件增益保持不变，线性度提高。

Description

一种HEMT射频器件及其制作方法 技术领域
本发明涉及半导体器件领域，特别涉及一种HEMT射频器件及其制作方法。
 背景技术
5G通信技术是最新一代蜂窝移动通信技术，是4G(LTE-A、WiMax)、3G(UMTS、LTE)和2G(GSM)系统后的延伸。5G通信技术将广泛用于智慧家庭、远程医疗、远程教育、工业制造和物联网领域，具体包括千兆级移动宽带数据接入、3D视频、高清视频、云服务、增强现实（AR）、虚拟现实（VR）、工业制造自动化、紧急救援、自动驾驶、现代物流等典型业务应用。其中，高清视频、AR、VR、远程医疗、工业制造自动化、现代物流管理等主要发生在建筑物室内场景。
GaN材料的研究与应用是目前全球半导体研究的前沿和热点，是研制微电子器件、光电子器件的新型半导体材料，并与SIC、金刚石等半导体材料一起，被誉为是继第一代Ge、Si半导体材料、第二代GaAs、InP化合物半导体材料之后的第三代半导体材料。氮化镓(GaN)具有宽禁带宽度，高击穿电场，高热导率，高电子饱和速率以及更高的抗辐射能力等优点，在高温、高频和微波大功率半导体器件中有着十分广阔的应用前景。低欧姆接触电阻对于输出功率，高效率，高频和噪声性能起到至关重要的作用。近年来，GaN凭借高频下更高的功率输出和更小的占位面积，被射频行业大量应用。
GaN射频器件在应用中，GaNHEMT射频器件为横向平面器件，如附图1所示，GaN HEMT器件的跨导（gm）随栅电压（Vgs）变化曲线，随着栅极输入电压增加，跨导gm下降，对应增益降低；跨导gm是指输出端电流的变化值与输入端电压的变化值之间的比值其PA的非线性导致显著的带边泄露、输出功率过早饱和、信号失真等，影响系统的特性及增加了系统设计的复杂度。
 技术解决方案
本发明的目的在于针对现有技术问题，提供一种HEMT射频器件及其制作方法。
为了实现以上目的，本发明的技术方案如下：
一种HEMT射频器件，包含从下至上依次层叠设置的衬底、缓冲层、沟道层、势垒层，所述沟道层与势垒层构成异质结；还包括相对设置在势垒层上方有源区处的源极和漏极，以及栅极，所述栅极包括设置于有源区处的源极与漏极之间栅极区域处的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，所述梳齿部与梳柄部相连，梳齿部间隔设置；所述梳柄部设置于势垒层上并与源极或漏极平行；沿着栅宽方向若干相邻梳齿部之间的间距不规则分布，即梳齿部之间形成疏密不均排布，至少包含两种及其以上不同的相邻梳齿部之间的间距；所述梳齿部深入势垒层中，若干梳齿部深入势垒层中的深度相等；所述梳齿部深入势垒层的深度大于或等于一半的势垒层厚度。
进一步的，所述栅极沿着栅长方向对称设置，即梳齿部沿着栅长方向对称设置；所述梳齿部的横向截面在栅长方向的尺寸小于栅极区域在栅长方向的尺寸；所述梳齿部的横向截面包含圆形、椭圆形、矩形、方形、跑道型、多边形中的任意一种。
进一步的，在本发明另一实施例中，所述势垒层的厚度范围为3nm-50nm，所述梳齿部贯穿势垒层并深入沟道层中；所述梳齿部深入沟道层的深度范围为1nm-200nm，该深度范围是指从沟道层表面至梳齿部的底部之间的距离。
进一步的，所述梳齿部的横向截面在栅宽方向的尺寸的取值范围为20nm~1000nm。
进一步的，所述HEMT射频器件为氮化镓基HEMT射频器件。
进一步的，沿着栅长方向的剖视图看，相邻梳齿部中间的梳柄部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳柄栅足，该梳柄栅足的底部位于势垒层的表面上。
进一步的，沿着栅长方向的剖视图看，梳齿部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳齿栅足，该梳齿栅足的底部位于势垒层内。
进一步的，在本发明另一实施例中，沿着栅长方向的剖视图看，相邻梳齿部中间的梳柄部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳柄栅足，该梳柄栅足的底部位于势垒层的表面上；梳齿部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳齿栅足，该梳齿栅足的底部位于沟道层内。
与上述HEMT射频器件相应的，本发明还提供了一种HEMT射频器件的制作方法，包括如下步骤：
步骤一，在半导体衬底上依次形成沟道层、缓冲层、势垒层；
步骤二，在势垒层上沉积介质层；
步骤三，在刻蚀介质层，在势垒层上方的源极区域和漏极区域相应形成源极区域窗口、漏极区域窗口；
步骤四，在源极区域窗口、漏极区域窗口上形成欧姆接触金属，并高温退火形成源极和漏极；
步骤五，通过光刻工艺，于有源区处的源极与漏极之间栅极区域处的势垒层在沿着栅宽方向形成若干个凹槽，若干个凹槽中至少两个或两个以上凹槽的凹槽深度相同；所述栅极设置在栅极区域的势垒层上及凹槽上；若干个凹槽沿着栅宽方向不规则排列，若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；凹槽深度大于或等于一半的势垒层厚度；
步骤六，通过光刻工艺在得到栅极区域窗口，在栅极区域窗口上形成肖特基接触金属，形成栅极，所述栅极包括设置于有源区处的源极与漏极之间栅极区域处的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，所述梳齿部与梳柄部相连，梳齿部间隔设置；所述梳柄部设置于势垒层上并与源极或漏极平行；沿着栅宽方向若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距。
进一步的，本发明还提供了另一种的HEMT射频器件的制作方法，与上述方案不同之处在于，步骤五中，通过光刻工艺，于有源区处的源极与漏极之间栅极区域处的势垒层在沿着栅宽方向形成若干个凹槽，所述凹槽穿过势垒层并深入沟道层中，深入沟道层的凹槽深度范围为1 nm-200 nm，该凹槽深度范围是指从沟道层表面至凹槽底部之间的距离。
 有益效果
与现有技术相比，本发明提供的HEMT射频器件及其制作方法具备如下有益效果：
本发明的HEMT射频器件的通过半导体制造工艺，实现同一器件的栅极区域下方形成相同凹槽深度，以形成相同长度的梳齿，沿着栅宽方向分布，形成设置于有源区处的源极与漏极之间的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，梳齿部间隔设置，相邻梳齿部沿着栅宽方向相邻梳齿部之间的间距逐任意排列分布，第i梳齿部至第i+1梳齿部之间为一区域的栅极，第j梳齿部至第j+1梳齿部之间为另一区域的栅极（其中i≠j），保证总体器件在开态时，漏极电流均匀分布的同时，实现器件跨导的平整性，使器件在射频工作时随着输入功率的增加，器件增益保持不变，线性度提高。
进一步的，在本发明另一实施例中，本发明所述梳齿部贯穿势垒层并深入沟道层中，梳齿部穿过二维电子气层进入器件沟道层，从而纵向维度上增强栅极对沟道的控制；沿着栅宽方向分布，形成设置于有源区处100的源极5与漏极6之间的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，梳齿部间隔设置，相邻梳齿部沿着栅宽方向相邻梳齿部之间的间距逐任意排列分布，第i梳齿部至第i+1梳齿部之间为一区域的栅极，第j梳齿部至第j+1梳齿部之间为另一区域的栅极（其中i≠j）。间距任意排列可避免器件在导通时电流位于器件的局部，保证总体器件在开态时，漏极电流均匀分布。同时，栅极下方不同区域的接连导通，使器件的跨导处于平稳区，使器件在射频工作时随着输入功率的增加，器件增益保持不变，线性度提高。
 附图说明
图1为现有GaNHEMT射频器件的跨导随栅电压变化曲线图；
图2为本发明的实施例一中HEMT射频器件的示意图一（其中小矩形虚线框示意梳齿部）；
图3为本发明的实施例一中HEMT射频器件的示意图一的B1方向的剖面示意图；
图4为本发明的实施例一中HEMT射频器件的示意图一的A1方向的剖面示意图；
图5为本发明的实施例一中HEMT射频器件的示意图一的A2方向的剖面示意图；
图6为本发明的实施例二中HEMT射频器件的示意图一的B1方向的剖面示意图；
图7为本发明的实施例二中HEMT射频器件的示意图一的A1方向的剖面示意图。
 本发明的实施方式
以下结合附图和具体实施例对本发明做进一步解释。
在本发明的描述中，需要说明的是，术语“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
实施例一
参考附图2-3，本发明的HEMT射频器件，包含从下至上依次层叠设置的衬底1、缓冲层2、沟道层3、势垒层4，所述沟道层与势垒层构成异质结；还包括相对设置在势垒层上方有源区处的源极5和漏极6，以及栅极7，所述栅极包括设置于有源区处100的源极5与漏极6之间栅极区域处的梳齿栅极结构；所述梳齿栅极结构包含梳柄部71和至少两个或两个以上的梳齿部72，梳齿部间隔设置，所述梳齿部与梳柄部相连；所述梳柄部71设置于势垒层上并与源极或漏极平行，所述梳齿部72深入势垒层中，所述梳齿部深入势垒层中，若干梳齿部深入势垒层中的深度相等，所述梳齿部72深入势垒层的深度大于或等于一半的势垒层厚度；若干梳齿部72沿着栅宽方向相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；不规则分布，即随机排布，不具备线性规则排布；不规则排列是指非线性规律排列，即若干梳齿部沿着栅宽方向相邻梳齿部之间的间距忽宽忽窄；所述沿着栅宽方向若干相邻梳齿部之间的间距规则分布为若干梳齿部沿着栅宽方向相邻梳齿部之间的间距逐渐变宽、逐渐变窄分布或等间距排布。
如附图3，B1方向的剖面示意图，所述若干梳齿部72沿着栅长方向对称设置，本实施例以6个梳齿部为例进行说明，第一梳齿部与第二梳齿部之间的距离为s1，第二梳齿部与第三梳齿部之间的距离为s2，第三梳齿部与第四梳齿部之间的距离为s3，第四梳齿部与第五梳齿部之间的距离为s4，第五梳齿部与第六梳齿部之间的距离为s5，s1、s2、s3、s4、s5之间互不相等，其中，S4＞S1＞S2＞S3＞S5。其中，所述梳齿部的横向截面在栅宽方向的尺寸的取值范围为20nm~1000nm，如附图2、3的图标a所示。
所述梳齿部72的截面界面为矩形（如附图2位于的栅极7的虚线72），所述梳齿部72的横向截面在栅长方向的尺寸x小于栅极区域在栅长方向的尺寸x0，即x＜x0，x/ x0的取值范围0.6-0.9。需要说明的是，本发明所述梳齿部72的截面界面为矩形，为优选实施例，可以为包含圆形、椭圆形、矩形、方形、跑道型、多边形等形状。
本发明的HEMT射频器件为一种氮化物HEMT射频器件中，沟道层和势垒层之间能够形成异质结沟道，使得两者的接触界面处能够形成二维电子气。示例地，沟道层可以为氮化镓材料而势垒层为铝镓氮材料。当然，在本发明实施例中，构成异质结结构的沟道层和势垒层还可以分别为氮化镓材料和铟镓氮材料等，此处对于沟道层和势垒层的具体材料不做限制，只要能够构成异质结结构即可。所述势垒层可以为AlGaN、氮化铝、铝铟氮化物、铝镓氮化物、铟镓氮化物或铝铟镓氮化物等，势垒层厚度范围为3 nm~50 nm。
其中，图4为沿着A1方向的剖面示意图，该处栅极的剖面示意图为T型，该处栅极的栅足插入势垒层中，即所述梳齿部72沿着栅长方向的栅极金属层横截面为T型结构，所述梳齿部72处的栅极金属层包括栅帽和梳齿栅足，该处梳齿栅足底部位于势垒层中，栅帽边沿与势垒层之间设置有介质层。
其中，图5为沿着A2方向的剖面示意图，该处栅极的剖面示意图为T型，该处的栅足底部位于势垒层的表面上。即相邻梳齿部之间处的沿着栅长方向的栅极金属层横截面为T型结构，包括栅帽和梳柄栅足，该处梳柄栅足底部设置于势垒层上表面上，栅帽边沿与势垒层之间设置有介质层。
所述衬底1可以为硅（Si）、碳化硅（SiC）、蓝宝石（Saphhire），缓冲层2为GaN层，所述沟道层为GaN层。
所述势垒层为AlGaN层，势垒层厚度3 nm~ 50 nm；
在一具体实施实施例中，所述衬底1为硅，厚度为100μm；缓冲层2为GaN层；所述沟道层3为GaN层，厚度为50nm；所述势垒层4为AlGaN层，势垒层厚度为30nm；所述缓冲层包含GaN材料，所述衬底和氮化物沟道层之间设有氮化物成核层(未图示)和氮化物缓冲层。
需要说明的是，在以上实施例中，源极5和漏极6可以部分深入到势垒层中，也可以源极5和漏极6可以设置在势垒层上。在具体实施实施例中，所述衬底1为蓝宝石，其厚度为60 μm；缓冲层2为GaN层；所述沟道层3为GaN层，其厚度为50 nm；所述势垒层4为AlGaN层。
相应的，本发明也列举了某一实施例的GaN HEMT射频器件的制作方法，具体包括如下步骤：
1）在蓝宝石衬底1上，利用金属有机化学气相沉积工艺生长GaN缓冲层2；
2）在GaN缓冲层2上，生长GaN沟道层3，厚度为20 nm；
3）GaN沟道层3上，生长AlGaN势垒层4，厚度20 nm；
4）在AlGaN势垒层(4)上，采用PECVD沉积工艺在300℃下沉积厚度为100 nm的Si 3N 4介质薄膜介质层8；
5）通过光刻工艺在源、漏区域形成刻蚀所需的窗口，采用反应离子刻蚀工艺去除源、漏极区域的Si 3N 4薄膜介质层8，形成源、漏极区域窗口；
6）采用电子束蒸发工艺，在源、漏极区域窗口上形成欧姆接触金属（例如Ti/Al/Ni/Au或Ti/Al/Mo/Au），并高温退火形成源极5和漏极6；
7)采用光刻蚀刻工艺在有源区的栅极区域处的势垒层处形成若干相邻凹槽，每个凹槽的深度都是相同；有源区处的若干相邻凹槽；参考附图2所示，本实施例中，设置6个凹槽，第一凹槽与第二凹槽距离为s1，第二凹槽与第三凹槽距离为s2，第三凹槽与第四凹槽距离为s3，第四凹槽与第五凹槽距离为s4，第五凹槽与第六凹槽距离为s5，其中，S4＞S1＞S2＞S3＞S5，本发明实施例中，包含了三种以上的不同的相邻梳齿部之间的间距，具体为五种不同的相邻梳齿部之间的距离；
8）通过光刻工艺在得到栅极区域窗口，在栅极区域窗口上形成肖特基接触金属Ni和Au，形成栅极7，位于有源区处100的源极5与漏极6之间的梳齿栅极结构包含若干梳齿部72沿着栅宽方向相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；所述若干梳齿部72沿着栅长方向对称设置。所述梳齿部72的截面界面为矩形，所述梳齿部72的横向截面在栅长方向的尺寸小于栅极区域在栅长方向的尺寸，即x＜x0。
本发明的HEMT射频器件的通过半导体制造工艺，实现同一器件的栅极区域下方形成相同凹槽深度，沿着栅宽方向分布，形成设置于有源区处100的源极5与漏极6之间的梳齿栅极结构；所述梳齿栅极结构包含梳柄部71和至少两个或两个以上的梳齿部72，梳齿部间隔设置，相邻梳齿部沿着栅宽方向相邻梳齿部之间的间距逐任意排列分布，第i梳齿部至第i+1梳齿部之间为一区域的栅极，第j梳齿部至第j+1梳齿部之间为另一区域的栅极（其中i≠j），保证总体器件在开态时，漏极电流均匀分布的同时，实现器件跨导的平整性，使器件在射频工作时随着输入功率的增加，器件增益保持不变，线性度提高。
实施例二
本实施例的HEMT射频器件为一种氮化物HEMT射频器件，与上述实施例一不同之处在于，进一步的，所述梳齿部贯穿势垒层并深入沟道层中；势垒层厚度为d0，取值为，所述沟道层的厚度范围5 nm-1000 nm，所述梳齿部深入沟道层的深度范围d为1nm-200 nm，若干梳齿部深入沟道层中的深度相等，若干梳齿部72沿着栅宽方向相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；不规则分布，即随机排布，不具备线性规则排布；不规则排列是指非线性规律排列，即若干梳齿部沿着栅宽方向相邻梳齿部之间的间距忽宽忽窄；所述沿着栅宽方向若干相邻梳齿部之间的间距规则分布为若干梳齿部沿着栅宽方向相邻梳齿部之间的间距逐渐变宽、逐渐变窄分布或等间距排布，如附图6-7所示，本发明在此不再赘述。
相应地，本实施例的一种氮化物HEMT射频器件的制作方法和实施例一相同，不同之处在于步骤7），
步骤7）中，通过光刻工艺，于有源区处的源极与漏极之间栅极区域处的势垒层在沿着栅宽方向形成若干个凹槽（凹槽深度为d0+d，即凹槽深度范围为4 nm~250 nm），所述凹槽穿过势垒层并深入沟道层，深入沟道层的凹槽深度d范围为1 nm-200 nm。
上述实施例中，本发明的HEMT射频器件的通过半导体制造工艺，实现同一器件的栅极区域下方形成相同凹槽深度，凹槽深度穿过二维电子气层进入器件沟道层，从纵向维度上增强栅极对沟道的控制；沿着栅宽方向分布，形成设置于有源区处的源极与漏极之间的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，梳齿部间隔设置，相邻梳齿部沿着栅宽方向相邻梳齿部之间的间距逐任意排列分布，第i梳齿部至第i+1梳齿部之间为一区域的栅极，第j梳齿部至第j+1梳齿部之间为另一区域的栅极（其中i≠j）。间距任意排列可避免器件在导通时电流位于器件的局部，保证总体器件在开态时，漏极电流均匀分布。同时，栅极下方不同区域的接连导通，使器件的跨导处于平稳区，使器件在射频工作时随着输入功率的增加，器件增益保持不变，线性度提高。
上述实施例仅用来进一步说明本发明HEMT射频器件及其制作方法，但本发明并不局限于实施例，凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均落入本发明技术方案的保护范围内。

Claims (10)

  1. 一种HEMT射频器件，其特征在于，
    包含从下至上依次层叠设置的衬底、缓冲层、沟道层、势垒层，所述沟道层与势垒层构成异质结；还包括相对设置在势垒层上方有源区处的源极和漏极，以及栅极，
    所述栅极包括设置于有源区处的源极与漏极之间栅极区域处的梳齿栅极结构；
    所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，所述梳齿部与梳柄部相连，梳齿部间隔设置；
    所述梳柄部设置于势垒层上并与源极或漏极平行；
    沿着栅宽方向若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；
    所述梳齿部深入势垒层中，若干梳齿部深入势垒层中的深度相等；
    所述梳齿部深入势垒层的深度大于或等于一半的势垒层厚度。
  2. 根据权利要求1所述的HEMT射频器件，其特征在于，
    所述栅极沿着栅长方向对称设置，即梳齿部沿着栅长方向对称设置；所述梳齿部的横向截面在栅长方向的尺寸小于栅极区域在栅长方向的尺寸；所述梳齿部的横向截面包含圆形、椭圆形、矩形、方形、跑道型、多边形中的任意一种。
  3. 根据权利要求1所述的HEMT射频器件，其特征在于，
    所述势垒层的厚度范围为3nm-50 nm，所述梳齿部贯穿势垒层并深入沟道层中；所述势垒层的厚度范围为5 nm-1000 nm，所述梳齿部深入沟道层的深度范围为1 nm-200 nm。
  4. 根据权利要求1所述的HEMT射频器件，其特征在于，
    所述梳齿部的横向截面在栅宽方向的尺寸的取值范围为20nm~1000nm。
  5. 根据权利要求1所述的HEMT射频器件，其特征在于，
    所述HEMT射频器件为氮化镓基HEMT射频器件。
  6. 根据权利要求1所述的HEMT射频器件，其特征在于，
    沿着栅长方向的剖视图看，相邻梳齿部中间的梳柄部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳柄栅足，该梳柄栅足的底部位于势垒层的表面上。
  7. 根据权利要求1所述的HEMT射频器件，其特征在于，
    沿着栅长方向的剖视图看，梳齿部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳齿栅足，该梳齿栅足的底部位于势垒层内。
  8. 根据权利要求3所述的HEMT射频器件，其特征在于，
    沿着栅长方向的剖视图看，相邻梳齿部中间的梳柄部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳柄栅足，该梳柄栅足的底部位于势垒层的表面上；梳齿部的横截面为T型状，该处栅极的栅极金属层包括栅帽和梳齿栅足，该梳齿栅足的底部位于沟道层内。
  9. 一种HEMT射频器件的制作方法，其特征在于，包括如下步骤：
    步骤一，在半导体衬底上依次形成沟道层、缓冲层、势垒层；
    步骤二，在势垒层上沉积介质层；
    步骤三，在刻蚀介质层，在势垒层上方的源极区域和漏极区域相应形成源极区域窗口、漏极区域窗口；
    步骤四，在源极区域窗口、漏极区域窗口上形成欧姆接触金属，并高温退火形成源极和漏极；
    步骤五，通过光刻工艺，于有源区处的源极与漏极之间栅极区域处的势垒层在沿着栅宽方向形成若干个凹槽，若干个凹槽中至少两个或两个以上凹槽的凹槽深度相同；所述栅极设置在栅极区域的势垒层上及凹槽上；若干个凹槽沿着栅宽方向不规则排列，若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距；凹槽深度大于或等于一半的势垒层厚度；
    步骤六，通过光刻工艺在得到栅极区域窗口，在栅极区域窗口上形成肖特基接触金属，形成栅极，所述栅极包括设置于有源区处的源极与漏极之间栅极区域处的梳齿栅极结构；所述梳齿栅极结构包含梳柄部和至少两个或两个以上的梳齿部，所述梳齿部与梳柄部相连，梳齿部间隔设置；所述梳柄部设置于势垒层上并与源极或漏极平行；沿着栅宽方向若干相邻梳齿部之间的间距不规则分布，至少包含两种及其以上不同的相邻梳齿部之间的间距。
  10. 根据权利要求9所述的HEMT射频器件的制作方法，其特征在于，
    步骤五中，通过光刻工艺，于有源区处的源极与漏极之间栅极区域处的势垒层在沿着栅宽方向形成若干个凹槽，所述凹槽穿过势垒层并深入沟道层中，深入沟道层的凹槽深度范围为1 nm-200 nm。
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