WO2022168787A1 - 半導体装置用Ａｌボンディングワイヤ - Google Patents

半導体装置用Ａｌボンディングワイヤ Download PDF

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Publication number
WO2022168787A1
WO2022168787A1 PCT/JP2022/003575 JP2022003575W WO2022168787A1 WO 2022168787 A1 WO2022168787 A1 WO 2022168787A1 JP 2022003575 W JP2022003575 W JP 2022003575W WO 2022168787 A1 WO2022168787 A1 WO 2022168787A1
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Prior art keywords
wire
less
bonding wire
bonding
mass
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Ceased
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PCT/JP2022/003575
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English (en)
French (fr)
Japanese (ja)
Inventor
裕弥 須藤
智裕 宇野
哲哉 小山田
大造 小田
基稀 江藤
佑仁 栗原
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Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
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Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
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Application filed by Nippon Micrometal Corp, Nippon Steel Chemical and Materials Co Ltd filed Critical Nippon Micrometal Corp
Priority to JP2022579524A priority Critical patent/JP7784390B2/ja
Priority to CN202280013190.3A priority patent/CN116918049A/zh
Priority to EP22749659.3A priority patent/EP4289983A4/en
Priority to US18/275,177 priority patent/US20240071978A1/en
Publication of WO2022168787A1 publication Critical patent/WO2022168787A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950°C
    • B23K35/286—Al as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01565—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]

Definitions

  • the present invention relates to Al bonding wires for semiconductor devices.
  • bonding wires are used as wiring materials that are responsible for electrical connection between semiconductor elements and external substrates.
  • Aluminum (Al) is mainly used as a material for bonding wires used in power devices because of the requirements for excellent bonding with electrodes on semiconductor elements and external substrates, electrical conductivity, and low cost.
  • the Al bonding wire is required to have mechanical properties such as breaking strength and elongation, thermal conductivity, and the like depending on the purpose of use.
  • bonding wires are used to connect the electrodes formed on the semiconductor chip with the electrodes on the lead frame or substrate.
  • Bonding wires made mainly of aluminum (Al) are used in power devices.
  • Al bonding wires wedge bonding is used for both the first connection with the electrodes on the semiconductor chip and the second connection with the electrodes on the lead frame and the substrate as the bonding method.
  • Patent Document 1 discloses a bonding wire containing one or more of Pd and Pt in the range of 0.001 to 0.08% in Al
  • Patent Document 2 discloses one or more of Rh and Pd. Bonding wires containing a total of 10 to 200 mass ppm are described, respectively, and these bonding wires are good at high temperature and high temperature in an accelerated evaluation test called PCT (Pressure Cooker Test) at a temperature of 121 ° C. and a relative humidity of 100%. It is disclosed to exhibit wet life.
  • PCT Pressure Cooker Test
  • Patent Document 1 does not disclose heat treatment conditions
  • Patent Document 2 discloses that heat treatment is performed as necessary with a wire diameter before reaching the final wire diameter. and heat treatment for 1 hour at a temperature range of 200 to 300° C. at the final wire diameter.
  • Bonding wires used in power devices are required to satisfy basic properties such as wedge bondability, electrical conductivity, and heat resistance, and to achieve good high-temperature, high-humidity life.
  • HAST Highly Accelerated
  • RH Relative Humidity
  • unbiased-HAST (unbiased-HAST ( hereinafter also referred to as uHAST) test was performed.
  • unbiased-HAST hereinafter also referred to as uHAST
  • uHAST unbiased-HAST
  • uHAST has a higher test temperature than PCT, which accelerates the formation rate of the above-mentioned corrosion products, and uHAST is required to have a high-temperature, high-humidity life that is more than twice that of PCT. A demand for improved high temperature and high humidity life in motion aware uHAST is anticipated.
  • An object of the present invention is to provide an Al bonding wire that exhibits a good high-temperature, high-humidity life in the high-temperature, high-humidity environment required for next-generation in-vehicle power devices.
  • the present inventors have found that the total content of one or more of Pd and Pt is 3 mass ppm or more and 500 mass ppm or less, and in a cross section parallel to the wire axial direction, found that an Al bonding wire having an orientation ratio of ⁇ 100> crystal orientation in a specific range with an angle difference of 15 degrees or less can solve the above problems, and based on such findings, the present invention was completed by further studies. did.
  • the present invention includes the following contents.
  • the Al bonding wire for a semiconductor device has an orientation ratio of 30% or more and 90% or less of ⁇ 100> crystal orientation with an angle difference of 15 degrees or less with respect to the wire axis direction.
  • the Al bonding wire for semiconductor devices according to [1] which has a tensile strength of 25 MPa or more and 85 MPa or less.
  • an Al bonding wire that exhibits a good high-temperature, high-humidity life in the high-temperature, high-humidity environment required for next-generation in-vehicle power devices.
  • the present invention can improve properties such as loop straightness when forming a long-span loop and shear strength of the wedge joint.
  • FIG. 1 is a schematic diagram for explaining a measurement target surface (inspection surface) when measuring the orientation ratio of the ⁇ 100> crystal orientation of an Al bonding wire.
  • the Al bonding wire for a semiconductor device of the present invention is an Al bonding wire for a semiconductor device containing one or more of Pd and Pt in a total of 3 ppm by mass or more and 500 ppm by mass or less, and including the wire axis of the bonding wire
  • the orientation ratio of ⁇ 100> crystal orientation with an angle difference of 15 degrees or less with respect to the wire axis direction is 30% or more and 90% or less.
  • the aluminum bonding wires used in cutting-edge power devices, especially next-generation automotive power devices require uHAST at a temperature of 150°C and 85% RH, which are accelerated evaluation conditions for operation in higher temperature environments.
  • Demand for improved high temperature and high humidity life is expected in the accelerated evaluation test called. It has been difficult to improve the high-temperature, high-humidity life of such uHAST only by the effects of additive elements. It was confirmed that the life of the Al bonding wire is more strongly affected by temperature in a high humidity environment. For example, as an accelerated evaluation test in a high-temperature environment, there is also a PCT at a temperature of 121 ° C.
  • the present inventors have found that the total amount of one or more of Pd and Pt is 3 mass ppm or more and 500 mass ppm or less, and in a cross section parallel to the wire axis direction including the wire axis, Al bonding wires with an orientation ratio of 30% or more and 90% or less of ⁇ 100> crystal orientation with an angle difference of 15 degrees or less exhibit good high-temperature and high-humidity life even in uHAST. It was found that even after 2000 hours had passed, wire corrosion could be suppressed and good electrical connection could be maintained.
  • the higher the temperature the higher the effect of suppressing corrosion.
  • controlling the crystal orientation is effective for suppressing corrosion in environments exceeding 140°C.
  • the above-described effects are sufficiently effective not only in unbiased-HAST, in which no bias voltage is applied to the junction, but also in biased-HAST, in which bias voltage is applied to the junction.
  • the wire axis means an axis passing through the center of the wire and parallel to the longitudinal direction of the wire.
  • the Al bonding wire for semiconductor devices of the present invention (hereinafter also simply referred to as “bonding wire” or “wire”) can withstand high temperatures and high temperatures required for state-of-the-art power devices, especially next-generation automotive power devices. It can exhibit a good high-temperature, high-humidity life even in a humid environment, and significantly contributes to the improvement of the high-temperature, high-humidity resistance of power devices.
  • the bonding wire of the present invention can provide a good high-temperature, high-humidity life in uHAST.
  • Al oxide and Al hydroxide were formed and corroded on the surface of the bonding wire in a high temperature and high humidity environment as a cause of the deterioration of the high temperature and high humidity life.
  • the formation of Al oxide and Al hydroxide is presumed to be due to chemical reaction between Al and H2O .
  • the bonding wire of the present invention contains a predetermined amount of one or more of Pd and Pt, and further has a ⁇ 100> crystal orientation ratio of Al in a cross section parallel to the wire axis direction. It is presumed that the orientation acted synergistically and suppressed the corrosion in uHAST.
  • the total concentration of one or more of Pd and Pt in the bonding wire of the present invention is 3 ppm by mass or more, more preferably 5 ppm by mass or more, and still more preferably 10 ppm by mass.
  • the total concentration of one or more of Pd and Pt is 500 mass ppm or less, preferably less than 500 mass ppm or 450 mass ppm or less, more preferably 400 mass ppm or less, 350 mass ppm or less, 300 mass ppm or less , 250 mass ppm or less, or 200 mass ppm or less.
  • An ICP (Inductively Coupled Plasma) emission spectrometer or an ICP mass spectrometer can be used to analyze the concentration of the elements contained in the bonding wire. If elements originating from atmospheric contaminants such as oxygen and carbon are adsorbed on the surface of the bonding wire, it is effective to wash it with an acid or alkali before analysis.
  • ICP Inductively Coupled Plasma
  • the angle difference with respect to the wire axis direction is 15 degrees or less ⁇ 100>
  • the orientation ratio of crystal orientation is 30% or more, preferably 40% or more, more preferably 50% or more, and still more preferably 55% or more or 60% or more.
  • uHAST tends to fail to provide a sufficient high-temperature, high-humidity life.
  • the orientation ratio of the ⁇ 100> crystal orientation is 90% or less, preferably less than 90% or 88% or less, more preferably 86% or less, 85% or less, 84% or less, 82% or less or 80% It is below.
  • Electron backscattered diffraction can be used as a technique for measuring crystal orientation.
  • An apparatus used for the EBSD method consists of a scanning electron microscope and a detector attached thereto.
  • the EBSD method is a technique for determining the crystal orientation at each measurement point by projecting a diffraction pattern of backscattered electrons generated when a sample is irradiated with an electron beam onto a detector and analyzing the diffraction pattern.
  • Dedicated software (such as OIM analysis manufactured by TSL Solutions Co., Ltd.) can be used to analyze the data obtained by the EBSD method.
  • the cross section including the wire axis and parallel to the wire axis direction (the cross section parallel to the longitudinal direction of the bonding wire) is used as the inspection surface, and the analysis software attached to the device is used to calculate the orientation ratio of a specific crystal orientation.
  • the wire axis of the bonding wire and the cross section including the wire axis and parallel to the wire axis direction refer to FIG. It is as described below.
  • the orientation ratio of ⁇ 100> crystal orientation is defined as the area ratio of ⁇ 100> crystal orientation when the measured area is the population.
  • the area ratio of the ⁇ 100> crystal orientation which is calculated as a population of the area of only the crystal orientations that can be identified based on a certain degree of reliability, is calculated as the orientation ratio of the ⁇ 100> crystal orientation. and In the process of obtaining the orientation ratio, calculation was performed by excluding portions where the crystal orientation could not be measured, or portions where the crystal orientation could be measured but the reliability of the orientation analysis was low.
  • the orientation ratio of the ⁇ 100> crystal orientation is the arithmetic mean of the orientation ratio values obtained by measuring five or more locations.
  • the crystal orientation measurement region by the EBSD method has a length of 300 ⁇ m or more and less than 600 ⁇ m in the wire axial direction, and the length in the direction perpendicular to the wire axial direction is the entire wire.
  • wire- Bonding wires used in power devices are required to exhibit good loop straightness when a long-span loop is formed.
  • the wire bonding portion that is, the first bonding portion with the electrode on the semiconductor chip
  • the wire bent in the direction perpendicular to the straight line connecting the lead frame and the second joint with the electrode on the substrate, and the required performance could not be satisfied.
  • the present inventors have found that the total amount of one or more of Pd and Pt is 3 mass ppm or more and 500 mass ppm or less, and the cross section parallel to the wire axis direction including the wire axis has an angle difference of 15 with respect to the wire axis direction. degree or less, the orientation ratio of the ⁇ 100> crystal orientation is 30% or more and 90% or less. It was found that the straightness of the loop was improved when the was formed.
  • the reason why the wire tensile strength of the bonding wire of the present invention is 25 MPa or more and 85 MPa or less improves the straightness of the loop when a long-span loop is formed is presumed as follows. That is, the effect of increasing the yield stress in the wire axial direction by including a predetermined amount of one or more of Pd and Pt is that the orientation ratio of the ⁇ 100> crystal orientation in the cross section parallel to the wire axial direction is controlled within a predetermined range. The effect of reducing the variation in mechanical strength in the axial direction of the wire, and the effect of increasing the yield stress in the axial direction of the wire by controlling the tensile strength of the wire within a predetermined range. It is presumed that the
  • the tensile strength of the bonding wire of the present invention is preferably 25 MPa or more, more preferably 26 MPa or more or 28 MPa or more, and still more preferably 30 MPa or more. 32 MPa or more, 34 MPa or more, 36 MPa or more, 38 MPa or more, or 40 MPa or more. If the tensile strength of the wire of the bonding wire of the present invention is less than 25 MPa, there is a tendency that sufficient loop straightness cannot be obtained when a long-span loop is formed. This is believed to be due to excessive softening of the wire.
  • the tensile strength of the wire is preferably 85 MPa or less, more preferably 84 MPa or less, 82 MPa or less, 80 MPa or less, 78 MPa or less, 76 MPa or less or 75 MPa or less.
  • the tensile strength of bonding wires can be measured using a tensile test.
  • a commercially available tensile tester (TENSILON RTF-1225 manufactured by A&D) can be used for the tensile test. Measurement can be performed with a gauge length of 100 mm, a tensile speed of 10 mm/min, and a load cell rated load of 250 N.
  • tensile strength means maximum stress in a tensile test.
  • the bonding wire of the present invention may further contain one or more of Si, Au and Ag in a total amount of 3 ppm by mass or more and 10000 ppm by mass or less. As a result, even better high-temperature, high-humidity life can be achieved.
  • the reason why the high-temperature and high-humidity life is further improved by containing a total of 3 mass ppm or more and 10000 mass ppm or less of one or more of Si, Au, and Ag is as follows. It is conceivable that the addition of one or more of Si, Au, and Ag, that is, the combined addition of Pd, Pt and one or more of Si, Au, and Ag developed the catalytic action.
  • the total concentration of one or more of Si, Au, and Ag contained in the bonding wire of the present invention is preferably 3 mass ppm or more, more preferably 5 mass ppm or more. , more preferably 6 mass ppm or more, 8 mass ppm or more, 10 mass ppm or more, 12 mass ppm or more, 14 mass ppm or more, or 15 mass ppm or more.
  • the total concentration of one or more of Si, Au, and Ag is preferably 1000 mass ppm or less, more preferably less than 1000 mass ppm, 950 mass ppm or less, 900 mass ppm or less, 850 mass ppm or less, and 800 mass ppm. ppm or less, 750 mass ppm or less, 700 mass ppm or less, 650 mass ppm or less, or 600 mass ppm or less.
  • the bonding wire of the present invention further contains one or more of Si, Au, and Ag in the above preferred range, thereby suppressing corrosion of the wire and maintaining good electrical connection even after 3000 hours in uHAST. I found what I can do.
  • the bonding wire of the present invention may further contain one or more of Fe and Mg in a total amount of 3 ppm by mass or more and 700 ppm by mass or less. This can further improve the shear strength of the wedge joint.
  • the reason why the shear strength of the wedge joint portion is improved by further containing a predetermined amount of one or more of Fe and Mg is that the yield stress in the wire axial direction is increased mainly by solid solution strengthening. It is speculated that
  • the total concentration of one or more of Fe and Mg contained in the bonding wire of the present invention is preferably 3 ppm by mass or more, more preferably 5 ppm by mass or more, and still more preferably 6 mass ppm or more, 8 mass ppm or more, 10 mass ppm or more, 12 mass ppm or more, 14 mass ppm or more, or 15 mass ppm or more.
  • the total concentration of one or more of Fe and Mg is preferably 700 mass ppm or less, more preferably less than 700 mass ppm, 650 mass ppm or less, 600 mass ppm or less, 550 mass ppm or less, 500 mass ppm or less. , 450 mass ppm or less, or 400 mass ppm or less.
  • the balance of the bonding wire of the present invention contains Al.
  • Al having a purity of 4N Al: 99.99% by mass or more
  • Al Al having a purity of 4N (Al: 99.99% by mass or more)
  • Al Al: 99.999% by mass or more
  • the remainder of the bonding wire of the present invention may contain elements other than Al as long as the effects of the present invention are not impaired.
  • the Al content is not particularly limited as long as it does not inhibit the effects of the present invention, but is preferably 95% by mass or more, 96% by mass or more, or 97% by mass or more, and more preferably 98% by mass or more, 98.5% by mass or more, 98.6% by mass or more, 98.8% by mass or more, or 99% by mass or more.
  • the balance of the bonding wire of the present invention consists of Al and unavoidable impurities.
  • the bonding wire of the present invention does not have a coating mainly composed of a metal other than Al on the outer circumference of the wire.
  • coating containing a metal other than Al as a main component refers to a coating containing 50% by mass or more of a metal other than Al.
  • the bonding wire of the present invention satisfies basic properties such as wedge bondability, electrical conductivity, and heat resistance, and has a good high-temperature, high-humidity life in the high-temperature, high-humidity environment required for next-generation automotive power devices. can bring. Therefore, the bonding wire of the present invention can be suitably used as an Al bonding wire for semiconductor devices, particularly for power semiconductor devices (especially for power semiconductor devices for vehicles).
  • the wire diameter of the bonding wire of the present invention is not particularly limited, and may be, for example, 50 to 600 ⁇ m.
  • the method for manufacturing the Al wiring material of the present invention is not particularly limited, and for example, it may be manufactured using known processing methods such as extrusion, swaging, wire drawing, and rolling.
  • processing methods such as extrusion, swaging, wire drawing, and rolling.
  • wire drawing When the wire diameter becomes small to some extent, it is preferable to perform wire drawing using a diamond die.
  • Cold working in which wire drawing is performed at room temperature, requires a relatively simple configuration, such as a manufacturing apparatus, and is excellent in workability.
  • hot working in which wire is drawn by heating may be used.
  • Al and pure metals of each additive element are weighed as starting materials so that the content of each additive element is within a specific range, and then mixed, melted and solidified to produce an ingot.
  • a master alloy containing the additive element at a high concentration may be used as a raw material for each additive element.
  • Batch type and continuous casting type can be used in the melting process for making this ingot.
  • the diameter of the cylindrical ingot is preferably ⁇ 8 mm or less (for example, ⁇ 3 mm or more and 8 mm or less) in consideration of workability in subsequent processing steps.
  • Wire drawing or the like can be performed on the obtained cylindrical ingot to manufacture a wire with a predetermined wire diameter. It is preferable to perform the refining heat treatment at the wire diameter before reaching the final wire diameter (hereinafter referred to as "intermediate wire diameter") or at the final wire diameter. Refining heat treatment can remove processing strain and cause recrystallization. Conditions for the refining heat treatment include, for example, heating in a temperature range of 300° C. or higher and 600° C. or lower for 1 second or longer and shorter than 600 seconds.
  • the orientation ratio of ⁇ 100> crystal orientation with an angle difference of 15 degrees or less with respect to the wire axis direction is 30% or more and 90%
  • a method of continuously sweeping the wire can be used for the intermediate heat treatment.
  • it is effective to perform intermediate heat treatment multiple times in the temperature range of 300° C. or higher and 550° C. or lower with an intermediate wire diameter. It is effective to set the heat treatment time during the intermediate heat treatment to 1 second or more and less than 600 seconds. It is effective to perform the intermediate heat treatment once each with a wire diameter of 1.3 to 2.0 times and 2.3 to 4.0 times the final wire diameter.
  • the heat treatment atmosphere is preferably an inert atmosphere such as an Ar gas atmosphere in order to prevent oxidation.
  • the reason why this method is effective for controlling the orientation ratio of the ⁇ 100> crystal orientation to 30% or more and 90% or less will be explained.
  • the crystal grains having the ⁇ 100> crystal orientation are formed by recrystallization in the intermediate heat treatment or the heat treatment process at the final wire diameter. Therefore, it is important to control the grain growth by performing the intermediate heat treatment process with a predetermined wire diameter.
  • the growth of crystal grains is driven by the strain energy accumulated in the material during wire drawing, so it is important to perform an intermediate heat treatment with a predetermined wire diameter to control the growth of crystal grains. be.
  • the growth rate of crystal grains increases as the heat treatment temperature increases, it is important to control the heat treatment temperature and heat treatment time.
  • the growth of crystal grains can be controlled by performing the intermediate heat treatment step with a predetermined wire diameter, heat treatment temperature, and heat treatment time, and the ⁇ 100> crystal orientation of the wire manufactured through the final heat treatment step can be controlled. It is considered that the azimuth ratio can be controlled within the target range.
  • a semiconductor device can be manufactured by connecting electrodes on a semiconductor chip to external electrodes on a lead frame or a substrate using the bonding wires of the present invention.
  • a semiconductor device of the present invention includes a circuit board, a semiconductor chip, and a bonding wire for electrically connecting the circuit board and the semiconductor chip, wherein the bonding wire is the bonding wire of the present invention. do.
  • the circuit board and semiconductor chip are not particularly limited, and known circuit boards and semiconductor chips that can be used to configure the semiconductor device may be used.
  • a lead frame may be used instead of the circuit board.
  • the configuration of the semiconductor device may include a lead frame and a semiconductor chip mounted on the lead frame.
  • Semiconductor devices are used in electrical products (e.g., computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.) and vehicles (e.g., motorcycles, automobiles, trains, ships, aircraft, etc.).
  • electrical products e.g., computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.
  • vehicles e.g., motorcycles, automobiles, trains, ships, aircraft, etc.
  • power semiconductor devices power semiconductor devices
  • power semiconductor devices especially power semiconductor devices for in-vehicle use, are suitable.
  • Al used as a raw material had a purity of 4N (99.99% by mass or more) and the balance was composed of unavoidable impurities.
  • Pd, Pt, Si, Au, Ag, Fe, and Mg used had a purity of 99.9% by mass or more and the balance was composed of unavoidable impurities.
  • the Al alloy used for the bonding wire was manufactured by charging an alumina crucible with an inner diameter of ⁇ 40 mm or more and less than 70 mm with raw materials to be alloyed with the Al raw materials and melting them using a high-frequency melting furnace.
  • the atmosphere in the furnace during melting was an Ar atmosphere, and the maximum temperature reached during melting was in the range of 1050°C or more and less than 1300°C.
  • a batch-type high-frequency melting furnace was used in the melting process for making this ingot. Cooling after dissolution was air cooling. If organic matter or the like adhered to the surface of the melted ingot, it was polished, degreased, and pickled as necessary.
  • a cylindrical ingot with a diameter of 3 mm or more and 8 mm or less was obtained by melting, and wire drawing or the like was performed on the ingot using a die to produce a wire of ⁇ 300 ⁇ m.
  • a commercially available lubricating liquid was used during wire drawing to ensure lubricity at the contact interface between the wire and the die.
  • the area reduction rate per die during wire drawing was set to 10% or more and less than 15%.
  • the area reduction rate is a value expressed as a percentage of the ratio of the cross-sectional area of the wire reduced by the wire drawing to the cross-sectional area of the wire before the wire drawing.
  • the wire feed speed during wire drawing was 10 m/min or more and less than 300 m/min.
  • the intermediate heat treatment at the intermediate wire diameter and the final heat treatment at the final wire diameter were performed under the conditions described below.
  • the intermediate heat treatment was performed while continuously sweeping the wire.
  • the atmosphere during the intermediate heat treatment was an Ar gas atmosphere.
  • the heat treatment temperature of the intermediate heat treatment was 300° C. or more and 550° C. or less, and the heat treatment time was 1 second or more and less than 600 seconds.
  • the intermediate heat treatment was performed once each with a wire diameter of 1.3 to 2.0 times and 2.3 to 4.0 times the final wire diameter.
  • the drawn wire was subjected to a final heat treatment so that the final tensile strength was 25 MPa or more and 85 MPa or less and the breaking elongation was 15% or more and less than 25%.
  • the final heat treatment was performed while sweeping the wire continuously.
  • the atmosphere during the final heat treatment was an Ar gas atmosphere.
  • the heat treatment temperature of the final heat treatment was 400° C. or more and 600° C. or less, and the heat treatment time was 1 second or more and less than 600 seconds.
  • the intermediate heat treatment temperature was 250°C and the heat treatment time was 5 seconds.
  • the intermediate heat treatment was performed once each with wire diameters of 500 ⁇ m and 900 ⁇ m.
  • the final heat treatment temperature was less than 400° C., and the heat treatment time was less than 1 second.
  • the intermediate heat treatment temperature was 350° C., and the heat treatment time was 8 seconds.
  • the intermediate heat treatment was performed once each with wire diameters of 450 ⁇ m and 1100 ⁇ m.
  • the final heat treatment temperature was 450° C., and the heat treatment time was 4 seconds.
  • the intermediate heat treatment temperature was set to 570° C., and the heat treatment time was set to 400 seconds.
  • the intermediate heat treatment was performed once each with wire diameters of 600 ⁇ m and 1000 ⁇ m.
  • the final heat treatment temperature was 600° C. or higher, and the heat treatment time was 600 seconds or longer.
  • the content of elements in the bonding wire is measured by ICP-OES ("PS3520UVDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS ("Agilent 7700x ICP-MS” manufactured by Agilent Technologies) as an analyzer. was measured using ICP-OES ("PS3520UVDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS ("Agilent 7700x ICP-MS” manufactured by Agilent Technologies) as an analyzer. was measured using ICP-OES ("PS3520UVDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS ("Agilent 7700x ICP-MS” manufactured by Agilent Technologies) as an analyzer. was measured using ICP-OES ("PS3520UVDDII” manufactured by Hitachi High-Tech Science Co., Ltd.) or ICP-MS ("Agilent 7700x ICP-MS” manufactured by Agilent Technologies) as an analyzer. was
  • a cross section including the wire axis of the bonding wire and parallel to the wire axis was used as an inspection plane, and the orientation ratio of the ⁇ 100> crystal orientation was measured.
  • the wire axis means the axis A shown in FIG. 1, that is, the central axis of the bonding wire.
  • a cross section parallel to the wire axial direction means a plane B shown in FIG. 1, that is, a cross section including the central axis of the bonding wire and parallel to the wire axial direction (wire longitudinal direction).
  • the value of the orientation ratio of the ⁇ 100> crystal orientation was the arithmetic mean of the values obtained in the five measurement regions.
  • measurement samples were obtained at intervals of 1 m or more in the wire axial direction and used for measurement.
  • the measurement area had a length of 300 ⁇ m or more and less than 600 ⁇ m in the axial direction of the wire, and the entire length of the wire in a direction perpendicular to the axial direction of the wire.
  • the EBSD method was used as a method for measuring the crystal orientation.
  • Dedicated software (such as OIM analysis manufactured by TSL Solutions Co., Ltd.) was used to analyze the data obtained by the EBSD method.
  • the measurement results are shown in the column of "orientation ratio of ⁇ 100> crystal orientation" in Tables 1-1, 1-2, 1-3, 1-4 and 2-1.
  • the tensile strength of the bonding wire was measured by a tensile test.
  • the tensile test was performed using a commercially available tensile tester (TENSILON RTF-1225 manufactured by A&D) under the conditions of a gauge length of 100 mm, a tensile speed of 10 mm/min, and a load cell rated load of 250 N.
  • the maximum stress in the tensile test was taken as the tensile strength.
  • the arithmetic mean value of the tensile strength of ten bonding wires is shown in the "Tensile Strength" column of Tables 1-1, 1-2, 1-3, 1-4 and 2-1.
  • the wire diameter of the bonding wire used for evaluation was set to ⁇ 300 ⁇ m.
  • a Ni-plated Al substrate was used as the substrate.
  • a commercially available wire bonder (REBO-7 manufactured by Ultrasonic Industry Co., Ltd.) was used for joining the bonding wires.
  • the temperature during bonding was normal temperature, and the atmosphere during bonding was an air atmosphere.
  • the high-temperature, high-humidity life was evaluated by uHAST, which is an accelerated evaluation test under a high-temperature, high-humidity environment. Considering operation in a higher temperature environment, the uHAST conditions were set to 150° C. and 85% RH, which are higher than usual.
  • the location to check the presence or absence of corrosion was the entire field of view to be observed. After 2000 hours, the entire cross section of the five wires was observed at a magnification of 200 times, and if even one wire was found to have corrosion of 10% or more in terms of area ratio, it was judged that there was a problem in practical use. In both cases, when the area ratio of wire corrosion was less than 10%, it was judged that there was no practical problem and was evaluated as "good".
  • the area ratio is a value calculated by dividing the corroded area in the field of view to be observed by the cross-sectional area of the wire. Furthermore, when corrosion of all five wires was less than 10% in terms of area ratio after 3000 hours, it was judged to be excellent and was evaluated as "A".
  • the evaluation results are shown in the column of "high temperature and high humidity life" in Tables 1-1, 1-2, 1-3, 1-4 and 2-1. x is unacceptable, and o and ⁇ are acceptable.
  • the shear strength of the wedge joints was evaluated by performing wedge joints at 10 locations under general joining conditions and measuring the shear strength of the wedge joints.
  • a commercially available microshear strength tester was used to measure the shear strength.
  • the shear rate was 200 ⁇ m/sec, and the height of the shear tool from the substrate was 10 ⁇ m.
  • the shear strength was measured by fixing the wire-bonded substrate with a jig. If there is even one place where the shear strength value obtained by the shear strength test of the wedge joint is less than 9 N, it is judged to be unacceptable, and all 10 places are obtained by the shear strength test of the wedge joint.
  • Tables 1-1, 1-2, 1-3 and 1-4 summarize the composition, orientation ratio (%) of ⁇ 100> crystal orientation, tensile strength, and evaluation results of the bonding wires according to the examples.
  • Table 2-1 shows the composition of the bonding wire according to the comparative example.
  • Example no. All of the bonding wires 1 to 96 contain at least one type of Pd and Pt in total of 3 ppm by mass or more and 500 ppm by mass or less, and in a cross section parallel to the wire axial direction including the wire axis, with respect to the wire axial direction The orientation ratio of the ⁇ 100> crystal orientation with an angle difference of 15 degrees or less is 30% or more and 90% or less. did.
  • Example No. 1 in which the tensile strength of the wire is 25 MPa or more and 85 MPa or less. It was confirmed that the bonding wires of 1 to 38 and 45 to 96 can obtain excellent loop straightness when forming long-span loops.
  • Example No. 1 containing at least one of Si, Au, and Ag in total of 3 ppm by mass or more and 10000 ppm by mass or less. It was confirmed that bonding wires of 45 to 64 and 74 to 96 can realize even better high temperature and high humidity life in the high temperature and high humidity environment required for power devices. Furthermore, Example No. 1 containing at least one of Fe and Mg in total of 3 mass ppm or more and 700 mass ppm or less. It was confirmed that the bonding wires Nos. 74 to 89 are excellent in shear strength of the wedge joint. On the other hand, Comparative Example No.
  • Bonding wires 1 to 12 have a total concentration of one or more of Pd and Pt and an orientation ratio of ⁇ 100> crystal orientation outside the scope of the present invention, and corrosion progresses in a high temperature and high humidity environment required for power devices. It was confirmed that sufficient high-temperature and high-humidity life could not be obtained.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
PCT/JP2022/003575 2021-02-05 2022-01-31 半導体装置用Ａｌボンディングワイヤ Ceased WO2022168787A1 (ja)

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JP2022579524A JP7784390B2 (ja) 2021-02-05 2022-01-31 半導体装置用Ａｌボンディングワイヤ
CN202280013190.3A CN116918049A (zh) 2021-02-05 2022-01-31 半导体装置用Al接合线
EP22749659.3A EP4289983A4 (en) 2021-02-05 2022-01-31 Al bonding wire for semiconductor devices
US18/275,177 US20240071978A1 (en) 2021-02-05 2022-01-31 Al BONDING WIRE FOR SEMICONDUCTOR DEVICES

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WO2024122384A1 (ja) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
JP7600475B1 (ja) * 2022-12-05 2024-12-16 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
JP7600474B1 (ja) * 2022-12-05 2024-12-16 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
WO2025115916A1 (ja) * 2023-11-27 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
TWI922860B (zh) 2022-12-05 2026-04-21 日商日鐵化學材料股份有限公司 Al連接材料

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JPS60177667A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体装置
JPS6132444A (ja) 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
JP2002246542A (ja) 2001-02-15 2002-08-30 Matsushita Electric Ind Co Ltd パワーモジュール及びその製造方法
JP2008311383A (ja) * 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
JP2014224283A (ja) 2013-05-15 2014-12-04 田中電子工業株式会社 耐食性アルミニウム合金ボンディングワイヤ

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JPS6095948A (ja) * 1983-10-31 1985-05-29 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用Ａｌ線
JPS60177667A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体装置
JPS6132444A (ja) 1984-07-24 1986-02-15 Hitachi Ltd 集積回路装置
JP2002246542A (ja) 2001-02-15 2002-08-30 Matsushita Electric Ind Co Ltd パワーモジュール及びその製造方法
JP2008311383A (ja) * 2007-06-14 2008-12-25 Ibaraki Univ ボンディングワイヤ、それを使用したボンディング方法及び半導体装置並びに接続部構造
JP2014224283A (ja) 2013-05-15 2014-12-04 田中電子工業株式会社 耐食性アルミニウム合金ボンディングワイヤ

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Cited By (17)

* Cited by examiner, † Cited by third party
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WO2025115258A1 (ja) * 2022-12-05 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
EP4534709A4 (en) * 2022-12-05 2025-07-23 Nippon Steel Chemical & Mat Co Ltd AL ALLOY BINDING WIRE
WO2024122380A1 (ja) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
WO2024122381A1 (ja) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
JP7600475B1 (ja) * 2022-12-05 2024-12-16 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
JP7600474B1 (ja) * 2022-12-05 2024-12-16 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
JP7626905B2 (ja) 2022-12-05 2025-02-04 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
TWI922860B (zh) 2022-12-05 2026-04-21 日商日鐵化學材料股份有限公司 Al連接材料
JPWO2024122381A1 (https=) * 2022-12-05 2024-06-13
WO2025115257A1 (ja) * 2022-12-05 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
WO2024122384A1 (ja) * 2022-12-05 2024-06-13 日鉄ケミカル＆マテリアル株式会社 Ａｌ接続材
WO2025115913A1 (ja) * 2023-11-27 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
WO2025115914A1 (ja) * 2023-11-27 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
JP7733858B1 (ja) * 2023-11-27 2025-09-03 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
JP7742006B1 (ja) * 2023-11-27 2025-09-18 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
JP7742005B1 (ja) * 2023-11-27 2025-09-18 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン
WO2025115916A1 (ja) * 2023-11-27 2025-06-05 日鉄ケミカル＆マテリアル株式会社 Ａｌボンディングワイヤ又はＡｌボンディングリボン

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EP4289983A1 (en) 2023-12-13
EP4289983A4 (en) 2025-03-05
JPWO2022168787A1 (https=) 2022-08-11

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