WO2022162494A1 - 表示装置、及び表示装置の作製方法 - Google Patents
表示装置、及び表示装置の作製方法 Download PDFInfo
- Publication number
- WO2022162494A1 WO2022162494A1 PCT/IB2022/050365 IB2022050365W WO2022162494A1 WO 2022162494 A1 WO2022162494 A1 WO 2022162494A1 IB 2022050365 W IB2022050365 W IB 2022050365W WO 2022162494 A1 WO2022162494 A1 WO 2022162494A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- light
- film
- display device
- emitting
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 238000002347 injection Methods 0.000 claims abstract description 86
- 239000007924 injection Substances 0.000 claims abstract description 86
- 230000005525 hole transport Effects 0.000 claims abstract description 66
- 239000010410 layer Substances 0.000 claims description 923
- 239000004065 semiconductor Substances 0.000 claims description 143
- 230000006870 function Effects 0.000 claims description 89
- 238000005530 etching Methods 0.000 claims description 44
- 239000011241 protective layer Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 30
- 239000002346 layers by function Substances 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 13
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 357
- 239000000758 substrate Substances 0.000 description 113
- 239000000463 material Substances 0.000 description 111
- 239000013078 crystal Substances 0.000 description 38
- 239000000126 substance Substances 0.000 description 38
- 230000032258 transport Effects 0.000 description 37
- 230000001681 protective effect Effects 0.000 description 34
- 238000005401 electroluminescence Methods 0.000 description 23
- 239000011701 zinc Substances 0.000 description 23
- 239000012535 impurity Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 150000002894 organic compounds Chemical class 0.000 description 18
- 239000012790 adhesive layer Substances 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 238000005755 formation reaction Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- -1 aromatic amine compounds Chemical class 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 239000000872 buffer Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052727 yttrium Inorganic materials 0.000 description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 102000001554 Hemoglobins Human genes 0.000 description 6
- 108010054147 Hemoglobins Proteins 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000003086 colorant Substances 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910003472 fullerene Inorganic materials 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 150000002484 inorganic compounds Chemical class 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000002159 nanocrystal Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- XESMNQMWRSEIET-UHFFFAOYSA-N 2,9-dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC(C=2C=C3C=CC=CC3=CC=2)=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=C(C=3C=C4C=CC=CC4=CC=3)N=C21 XESMNQMWRSEIET-UHFFFAOYSA-N 0.000 description 3
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 150000001454 anthracenes Chemical class 0.000 description 3
- 150000004982 aromatic amines Chemical class 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000001716 carbazoles Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical group [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000002790 naphthalenes Chemical class 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 150000003222 pyridines Chemical class 0.000 description 3
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 3
- 150000003230 pyrimidines Chemical class 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 150000003252 quinoxalines Chemical class 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical class N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 238000007766 curtain coating Methods 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000004826 dibenzofurans Chemical class 0.000 description 2
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical class C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 150000002240 furans Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002390 heteroarenes Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical class [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 150000007978 oxazole derivatives Chemical class 0.000 description 2
- 125000002971 oxazolyl group Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000005041 phenanthrolines Chemical class 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 125000003373 pyrazinyl group Chemical group 0.000 description 2
- 150000003220 pyrenes Chemical class 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003248 quinolines Chemical class 0.000 description 2
- 125000002943 quinolinyl group Chemical class N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 150000007979 thiazole derivatives Chemical class 0.000 description 2
- 150000003577 thiophenes Chemical class 0.000 description 2
- 125000005580 triphenylene group Chemical group 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical class C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical group C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- AEJARLYXNFRVLK-UHFFFAOYSA-N 4H-1,2,3-triazole Chemical group C1C=NN=N1 AEJARLYXNFRVLK-UHFFFAOYSA-N 0.000 description 1
- JWBHNEZMQMERHA-UHFFFAOYSA-N 5,6,11,12,17,18-hexaazatrinaphthylene Chemical compound C1=CC=C2N=C3C4=NC5=CC=CC=C5N=C4C4=NC5=CC=CC=C5N=C4C3=NC2=C1 JWBHNEZMQMERHA-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 208000033986 Device capturing issue Diseases 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910012294 LiPP Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229940054051 antipsychotic indole derivative Drugs 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YVVVSJAMVJMZRF-UHFFFAOYSA-N c1cncc(c1)-c1cccc(c1)-c1cccc(c1)-c1nc(nc(n1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1 Chemical compound c1cncc(c1)-c1cccc(c1)-c1cccc(c1)-c1nc(nc(n1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1)-c1cccc(c1)-c1cccc(c1)-c1cccnc1 YVVVSJAMVJMZRF-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- 150000001907 coumarones Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000005331 diazinyl group Chemical group N1=NC(=CC=C1)* 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- VVVPGLRKXQSQSZ-UHFFFAOYSA-N indolo[3,2-c]carbazole Chemical class C1=CC=CC2=NC3=C4C5=CC=CC=C5N=C4C=CC3=C21 VVVPGLRKXQSQSZ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002361 inverse photoelectron spectroscopy Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000005359 phenylpyridines Chemical class 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Chemical class 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000004059 quinone derivatives Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical class [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- OPCPDIFRZGJVCE-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Zn+2].[In+3].[Ti+4] OPCPDIFRZGJVCE-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/771—Integrated devices comprising a common active layer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
- H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Definitions
- One embodiment of the present invention relates to a display device.
- One embodiment of the present invention relates to a method for manufacturing a display device.
- one aspect of the present invention is not limited to the above technical field.
- Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input/output devices, and driving methods thereof. , or methods for producing them, can be mentioned as an example.
- a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
- display devices have been used in various devices such as smartphones, tablet terminals, information terminal devices such as laptop PCs, television devices, and monitor devices.
- display devices that have various functions in addition to displaying images, such as a function as a touch sensor or a function of capturing fingerprints for authentication.
- An object of one embodiment of the present invention is to provide a display device having a function of detecting an object in contact with or in proximity to a display portion, and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a display device having a function of performing authentication and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a display device with a high aperture ratio and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a small display device and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a highly reliable display device and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a novel display device and a manufacturing method thereof.
- One embodiment of the present invention includes a light-emitting element and a light-receiving element, and the light-emitting element includes a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode.
- the light-receiving element has a second pixel electrode, a second functional layer, a light-receiving layer, a common layer, and a common electrode
- the first functional layer is a hole injection layer or an electron It has one of the injection layers
- the second functional layer has one of the hole-transport layer and the electron-transport layer
- the common layer serves as the other of the hole-injection layer and the electron-injection layer in the light-emitting device. It is a display device having a function.
- the first transistor and the second transistor are included, one of the source and the drain of the first transistor is electrically connected to the first pixel electrode, and the second transistor may be electrically connected to the second pixel electrode, and the first transistor and the second transistor may have silicon or metal oxide in channel formation regions.
- a first step of forming a first pixel electrode, a second pixel electrode, and a connection electrode light emission is performed over the first pixel electrode and the second pixel electrode.
- a second step of forming a film; a third step of forming a first sacrificial film on the light-emitting film and the connection electrode; etching the first sacrificial film and the light-emitting film; a fourth step of exposing two pixel electrodes and forming a light-emitting layer on the first pixel electrode and a first sacrificial layer on the light-emitting layer and on the connection electrode; on the light-emitting layer; and a fifth step of forming a light-receiving film on the light-receiving film and the second pixel electrode; a sixth step of forming a second sacrificial film on the light-receiving film and on the connection electrode; , and the light-receiving film are
- the common layer functions as either a hole-injection layer or an electron-injection layer in a light-emitting element having a first pixel electrode, a light-emitting layer, a common layer, and a common electrode.
- an eleventh step of forming a first functional film on the first pixel electrode and the second pixel electrode is provided between the first step and the second step.
- etching the first functional film to form a first functional layer on the first pixel electrode in a fourth step, etching the first functional film to form a first functional layer on the first pixel electrode; a twelfth step of forming a second functional film on the layer and on the second pixel electrode; wherein the first functional layer has the other of the hole-injection layer or the electron-injection layer, and the second functional layer has one of the hole-transport layer or the electron-transport layer.
- the light-emitting film, the light-receiving film, and the common layer may be formed by a vapor deposition method using a shielding mask.
- the first sacrificial film and the second sacrificial film include the same metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film; is etched by dry etching using an etching gas that does not contain oxygen as a main component. , oxalic acid, phosphoric acid, acetic acid, nitric acid, or wet etching using a mixed liquid thereof.
- the above aspect may have a fourteenth step of forming a protective layer on the common electrode after the tenth step.
- a display device having a function of detecting an object in contact with or in proximity to a display portion and a manufacturing method thereof can be provided.
- a display device having a function of performing authentication and a manufacturing method thereof can be provided.
- a display device with a high aperture ratio and a manufacturing method thereof can be provided.
- a small display device and a manufacturing method thereof can be provided.
- a highly reliable display device and a manufacturing method thereof can be provided.
- a novel display device and a manufacturing method thereof can be provided.
- FIG. 1A to 1E are cross-sectional views showing configuration examples of a display device.
- FIG. 1F is a diagram showing an example of a captured image.
- 2A and 2B are top views showing configuration examples of the display device.
- 3A and 3B are top views showing configuration examples of the display device.
- FIG. 4A is a top view showing a configuration example of a display device.
- FIG. 4B is a diagram showing the light receiving range of the light receiving element.
- FIG. 5 is a top view showing a configuration example of a display device.
- 6A to 6E are cross-sectional views showing configuration examples of the display device.
- 7A to 7D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- FIG. 8A to 8C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 9A to 9D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 11A to 11C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- FIG. 12A is a top view showing a configuration example of a display device.
- 12B and 12C are cross-sectional views showing configuration examples of the display device.
- FIG. 13A is a top view showing a configuration example of a display device.
- FIG. 13B is a cross-sectional view showing a configuration example of a display device.
- FIG. 13A is a top view showing a configuration example of a display device.
- FIG. 13B is a cross-sectional view showing a configuration example of a display device.
- FIG. 14 is a perspective view showing a configuration example of a display device.
- FIG. 15 is a cross-sectional view showing a configuration example of a display device.
- FIG. 16 is a cross-sectional view showing a configuration example of a display device.
- FIG. 17 is a cross-sectional view showing a configuration example of a display device.
- FIG. 18 is a cross-sectional view showing a configuration example of a display device.
- FIG. 19 is a cross-sectional view showing a configuration example of a display device.
- 20A to 20D are cross-sectional views showing configuration examples of light-emitting elements.
- 21A and 21B are diagrams showing configuration examples of a display device.
- 22A to 22G are diagrams showing configuration examples of display devices.
- 23A to 23E are diagrams illustrating examples of electronic devices.
- film and the term “layer” can be interchanged with each other.
- conductive layer or “insulating layer” may be interchangeable with the terms “conductive film” or “insulating film.”
- an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer) or a laminate including a light-emitting layer. .
- a display panel which is one aspect of a display device, has a function of displaying (outputting) an image, for example, on a display surface. Therefore, the display panel is one aspect of the output device.
- the substrate of the display panel is attached with a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or an IC is sometimes called a display panel module, a display module, or simply a display panel.
- a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package)
- an IC is sometimes called a display panel module, a display module, or simply a display panel.
- a display device of one embodiment of the present invention includes a display portion in which pixels are arranged in matrix.
- a pixel has a plurality of sub-pixels, and one light-emitting element (also referred to as a light-emitting device) is provided for each sub-pixel.
- a plurality of sub-pixels provided in the same pixel can have a function of emitting lights of different colors.
- Each light-emitting element has a pair of electrodes and a light-emitting layer therebetween.
- the light-emitting element is preferably an organic EL element (organic electroluminescence element).
- Two or more light-emitting elements that emit different colors have light-emitting layers each containing a different material.
- a full-color display device can be realized by including three types of light-emitting elements that emit red (R), green (G), and blue (B) light.
- a light-emitting layer is processed into a fine pattern without using a shadow mask such as a metal mask.
- the sub-pixels can be miniaturized and the aperture ratio of the pixels can be increased as compared with the case where the light-emitting layers are separately formed by using the shadow mask.
- the light-emitting layers can be separately formed, a display device with extremely vivid, high-contrast, and high-quality display can be realized.
- a pixel can be provided with a sub-pixel having a light-receiving element (also referred to as a light-receiving device) in addition to the sub-pixel having a light-emitting element.
- the display device of one embodiment of the present invention can prevent the pixel density from becoming small.
- the pixel density can be 400 ppi or greater, 1000 ppi or greater, 3000 ppi or greater, or 5000 ppi or greater.
- a light-receiving element included in the display device of one embodiment of the present invention functions as an optical sensor. Therefore, the display device of one embodiment of the present invention can display an image with a light-emitting element and detect an object that is in contact with or close to the display portion, for example, with a light-receiving element. For example, when a finger of a user of the display device is in contact with the display portion of the display device of one embodiment of the present invention, authentication can be performed based on the fingerprint of the finger.
- the light-receiving element in the display unit, there is no need to externally attach the sensor to the display device. Therefore, since the number of parts of the display device can be reduced, the size and weight of the display device can be reduced.
- the light-receiving element can detect light emitted by the light-emitting element, applied to an object, and reflected by the object. Therefore, even in a dark place, for example, an object that is in contact with or close to the display can be detected, and authentication such as fingerprint authentication can be performed.
- devices manufactured using metal masks or FMM are sometimes referred to as devices with MM (metal mask) structures.
- MM metal mask
- a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
- a light-emitting element capable of emitting white light is sometimes referred to as a white light-emitting element.
- the white light-emitting element can be combined with a colored layer (for example, a color filter) to provide a full-color display light-emitting element.
- the light-emitting element can be roughly classified into a single structure and a tandem structure.
- a single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
- the light-emitting unit preferably includes one or more light-emitting layers.
- the emission color of the first light-emitting layer and the emission color of the second light-emitting layer it is possible to obtain a configuration in which the entire light-emitting element emits white light.
- a light-emitting element having three or more light-emitting layers are examples of the entire light-emitting element having three or more light-emitting layers.
- a tandem structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers.
- each light-emitting unit preferably includes one or more light-emitting layers.
- a structure in which white light emission is obtained by combining light from the light emitting layers of a plurality of light emitting units may be employed. Note that the structure for obtaining white light emission is the same as the structure of the single structure.
- the white light emitting element when comparing the white light emitting element (single structure or tandem structure) and the light emitting element having the SBS structure, the light emitting element having the SBS structure can consume less power than the white light emitting element. Therefore, in order to suppress the power consumption of the display device, it is preferable to use a light-emitting element having an SBS structure.
- the manufacturing process of the white light emitting element is simpler than that of the SBS structure light emitting element, so that the manufacturing cost can be reduced or the manufacturing yield can be increased.
- FIGS. 1A to 1E are cross-sectional views illustrating structural examples of a display device of one embodiment of the present invention.
- a display device 10A shown in FIG. 1A has a layer 53 having light receiving elements and a layer 57 having light emitting elements between substrates 51 and 59 .
- a display device 10B shown in FIG. 1B has a layer 55 having a transistor, a layer 53 having a light receiving element, and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.
- FIG. 1B A display device 10B shown in FIG. 1B has a layer 55 having a transistor, a layer 53 having a light receiving element, and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.
- the display device 10A and the display device 10B have a configuration in which red (R), green (G), and blue (B) lights are emitted from the layer 57 having light emitting elements.
- a display device of one embodiment of the present invention includes a plurality of pixels arranged in a matrix in a display portion.
- One pixel has one or more sub-pixels.
- One sub-pixel has one light-emitting element or one light-receiving element.
- a pixel can have four sub-pixels.
- one pixel can be configured to have a light-emitting element of three colors of R, G, and B and a light-receiving element, and yellow (Y), cyan (C), and magenta ( M) can be configured to have three color light-emitting elements and light-receiving elements.
- the pixel can have a structure having five sub-pixels.
- one pixel can be configured to have four-color light-emitting elements of R, G, B, and white (W) and a light-receiving element.
- W white
- a configuration including light emitting elements of four colors of R, G, B, and infrared (IR) and light receiving elements can be employed.
- the light receiving element may be provided in all the pixels, or may be provided in some of the pixels.
- one pixel may have a plurality of light receiving elements.
- a display device of one embodiment of the present invention may have a function of detecting an object such as a finger in contact with the display device. For example, as shown in FIGS. 1C and 1D, light emitted by a light emitting element in a layer 57 having a light emitting element is reflected by a finger 52 in contact with the display device 10B, so that light is received by a layer 53 having a light receiving element. An element detects the reflected light. Thereby, in the case shown in FIG. 1C, it is possible to detect that the finger 52 touches the display device 10B. Also, in the case shown in FIG. 1D, it is possible to detect that the finger 52 has approached the display device 10B.
- the display device of one embodiment of the present invention can function as a touch sensor (also referred to as a direct touch sensor), or a near touch sensor (hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). It can have the function as
- the finger 52 can be detected when the finger 52 approaches the display device 10B even if the finger 52 does not touch the display device 10B.
- the display device 10B can detect the finger 52 when the distance between the display device 10B and the finger 52 is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
- the display device 10B can be operated without the finger 52 directly touching it, in other words, the display device 10B can be operated without contact (touchless).
- the display device of one embodiment of the present invention can have a function of detecting the fingerprint of the finger 52, for example.
- FIG. 1E schematically shows an enlarged view of the contact portion when the finger 52 is in contact with the substrate 59.
- FIG. 1E shows how layers 57 having light emitting elements and layers 53 having light receiving elements are alternately arranged.
- a fingerprint is formed on the finger 52 by concave portions and convex portions. Therefore, the convex portion of the fingerprint touches the substrate 59 as shown in FIG. 1E.
- Specularly reflected light is highly directional light whose incident angle and reflected angle are the same, and diffusely reflected light is light with low angle dependence of intensity and low directivity.
- the light reflected from the surface of the finger 52 is dominated by the diffuse reflection component of the specular reflection and the diffuse reflection.
- the light reflected from the interface between the substrate 59 and the atmosphere is predominantly a specular reflection component.
- the intensity of the light reflected by the contact surface or the non-contact surface between the finger 52 and the substrate 59 and incident on the layer 53 located directly below them is the sum of specularly reflected light and diffusely reflected light.
- the specularly reflected light (indicated by the solid line arrow) is dominant. indicated by dashed arrows) becomes dominant. Therefore, the intensity of light received by the light-receiving element of the layer 53 located directly below the recess is higher than the intensity of light received by the light-receiving element of the layer 53 located directly below the protrusion. Therefore, the fingerprint of the finger 52 can be imaged using the light receiving element.
- the arrangement interval of the light receiving elements of the layer 53 is set to be smaller than the distance between two protrusions of the fingerprint, preferably smaller than the distance between adjacent recesses and protrusions, so that a clear fingerprint image can be obtained. can be done. Since the distance between concave and convex portions of a human fingerprint is approximately 150 ⁇ m to 250 ⁇ m, for example, the array interval of light receiving elements is 400 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, and even more preferably 120 ⁇ m or less. More preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less. Although the arrangement interval is preferably as small as possible, it can be, for example, 1 ⁇ m or more, 10 ⁇ m or more, or 20 ⁇ m or more.
- FIG. 1F is an example of a fingerprint image captured by the display device of one embodiment of the present invention.
- the contour of the finger 52 is indicated by a dashed line in the region 65
- the contour of the contact portion 69 is indicated by a dashed line.
- a high-contrast fingerprint 67 can be imaged due to the difference in the amount of light incident on the light-receiving element.
- the light-receiving element can detect light emitted by the light-emitting element, applied to an object such as the finger 52, and reflected by the object. Therefore, even in a dark place, for example, an object that is in contact with or close to the display can be detected, and authentication such as fingerprint authentication can be performed.
- the light-receiving element in the display unit, it is no longer necessary to externally attach the sensor to the display device. Therefore, since the number of parts of the display device can be reduced, the size and weight of the display device can be reduced.
- FIG. 2A is a schematic top view illustrating a configuration example of the display device 10 of one embodiment of the present invention.
- the display device 10 has a plurality of light emitting elements 110R that emit red light, a plurality of light emitting elements 110G that emit green light, a plurality of light emitting elements 110B that emit blue light, and a plurality of light receiving elements 150, respectively.
- the light emitting regions of the light emitting elements 110 are labeled with R, G, and B.
- the light-receiving region of each light-receiving element 150 is denoted by PD.
- the term "display device 10" is simply used. That is, the configuration and the like of the display device 10 can be applied to both the display device 10A shown in FIG. 1A and the display device 10B shown in FIG. 1B. The same is true for other elements.
- the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 150 are each arranged in a matrix.
- FIG. 2A shows an example in which a light emitting element 110R, a light emitting element 110G, and a light emitting element 110B are arranged in the X direction, and a light receiving element 150 is arranged below them.
- FIG. 2A also shows, as an example, a configuration in which the light emitting elements 110 that emit light of the same color are arranged in the Y direction that intersects with the X direction. In the display device 10 shown in FIG.
- a pixel 20 can be configured by a sub-pixel having a light-receiving element 150 .
- EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) are preferably used as the light emitting elements 110R, 110G, and 110B.
- the light-emitting substance of the EL element includes a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescence material), an inorganic compound (for example, quantum dot material), or a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescent (thermally activated delayed fluorescence: TADF) material) and the like.
- a pn-type or pin-type photodiode can be used as the light receiving element 150 .
- the light receiving element 150 functions as a photoelectric conversion device that detects light incident on the light receiving element 150 and generates charges. The amount of charge generated is determined based on the amount of incident light.
- organic photodiode having a layer containing an organic compound as the light receiving element 150 .
- Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
- an organic EL device is used as the light emitting element 110 and an organic photodiode is used as the light receiving element 150 .
- An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
- FIG. 2A shows the common electrode 123 and the connection electrode 111C.
- the connection electrode 111 ⁇ /b>C is electrically connected to the common electrode 123 .
- the connection electrode 111C is provided outside the display section where the light emitting elements 110 and the light receiving elements 150 are arranged. Further, in FIG. 2A, the common electrode 123 having a region overlapping with the light emitting element 110, the light receiving element 150, and the connection electrode 111C is indicated by a dashed line.
- connection electrode 111C can be provided along the outer periphery of the display section. For example, it may be provided along one side of the outer periphery of the display section, or may be provided over two or more sides of the outer periphery of the display section. That is, when the top surface shape of the display portion is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), frame-shaped, or the like.
- FIG. 2B is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 2A.
- the display device 10 shown in FIG. 2B is different from the display device 10 shown in FIG. 2A in that it has light-emitting elements 110IR that emit infrared light.
- the light emitting element 110IR can emit, for example, near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less).
- the light emitting element 110IR is arranged in the X direction, and the light receiving element 150 is arranged thereunder. Further, the light receiving element 150 has a function of detecting infrared light.
- FIG. 3A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 2B.
- the display device 10 shown in FIG. 3A differs from the display device 10 shown in FIG. 2B in that the light receiving elements 150 and the light emitting elements 110IR are alternately arranged in the X direction.
- the light emitting elements 110R, 110G, and 110B and the light emitting elements 110IR are arranged in different rows. Therefore, the widths (the lengths in the X direction) of the light emitting elements 110R, 110G, and 110B can be increased, so that the luminance of light emitted from the pixels 20 can be increased.
- FIG. 3B is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 3A.
- the display device 10 shown in FIG. 3A differs from the display device 10 shown in FIG. 3A in that the light-emitting elements 110 are arranged in the order of G, B, and R in the X direction instead of the order of R, G, and B.
- 3A in that the light receiving element 150 is provided under the light emitting element 110G and the light emitting element 110B, and the light emitting element 110IR is provided under the light emitting element 110R.
- the area occupied by the light receiving element 150 in the display device 10 shown in FIG. 3B is larger than the area occupied by the light receiving element 150 in the display device 10 shown in FIG. 3A. Therefore, the light detection sensitivity of the light receiving element 150 can be enhanced. Therefore, for example, when the display device 10 has a function as a touch sensor or a near-touch sensor, an object that touches or approaches the display device 10 can be detected with high accuracy. In particular, when the display device 10 has a function as a near-touch sensor, the light detection sensitivity of the light receiving element 150 greatly affects the object detection accuracy, so it is preferable to increase the area occupied by the light receiving element 150 .
- FIG. 4A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 3B.
- the display device 10 shown in FIG. 4A is similar to the display device 10 shown in FIG. different from
- the area occupied by the light receiving element 150 in the display device 10 shown in FIG. 4A is smaller than the area occupied by the light receiving element 150 in the display device 10 shown in FIG. 3B.
- the light receiving range of each light receiving element 150 can be narrowed.
- overlapping of light receiving ranges between different light receiving elements 150, for example, between adjacent light receiving elements 150 can be reduced. Therefore, it is possible to prevent blurring of an image captured using the light receiving element 150 and failure to capture a clear image.
- FIG. 4B is a cross-sectional view showing changes in the light receiving range of the light receiving element 150 when the area occupied by the light receiving element 150, specifically the length in the X direction, is changed.
- the light receiving element 150 is shown on the lower surface side of the layer 71 and the light shielding layer 73 is shown on the upper surface side of the layer 71 .
- substrate 59 is shown on layer 71 .
- a light-receiving element having a length in the X direction approximately three times that of the light-receiving element 150 is referred to as a light-receiving element 150L.
- light incident on the light receiving element 150 is designated as light 75 and indicated by a solid line.
- Light 77 that does not enter the light receiving element 150 but does enter the light receiving element 150L is indicated by a dashed line.
- a light receiving range 80 is defined as a light receiving range of one light receiving element 150
- a light receiving range 81 is defined as a light receiving range of one light receiving element 150L.
- FIG. 5 is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 2A.
- the display device 10 shown in FIG. 5 is different from the display device 10 shown in FIG. 2A in that only some of the pixels 20 are provided with light receiving elements 150 .
- the pixel 20 in which the light receiving element 150 is not provided is referred to as the pixel 20a.
- the driving frequency of the display device 10 can be increased. Therefore, for example, when the display device 10 has a function as a touch sensor or a near-touch sensor, it is possible to quickly detect the position of an object that contacts or approaches the display device 10 . Therefore, for example, the movement of an object that contacts or approaches the display device 10 can be detected at high speed and with high accuracy.
- FIG. 6A is a cross-sectional view corresponding to the dashed-dotted line A1-A2 in FIG. 2A
- FIG. 6B is a cross-sectional view corresponding to the dashed-dotted line B1-B2 in FIG. 2A
- 6C is a cross-sectional view corresponding to the dashed-dotted line C1-C2 in FIG. 2A
- FIG. 6D is a cross-sectional view corresponding to the dashed-dotted line D1-D2 in FIG. 2A
- FIG. 6E is a cross-sectional view corresponding to the dashed-dotted line B3-B4 in FIG. 3A.
- the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 150 are provided on the substrate 101.
- FIG. Also, when the display device 10 has the light emitting element 110 IR, the light emitting element 110 IR is provided on the substrate 101 .
- FIG. 6A shows a cross-sectional configuration example of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B. Also, FIG. 6B shows a cross-sectional configuration example of the light receiving element 150 .
- the light emitting element 110R has a pixel electrode 111R, a hole injection layer 113R, a hole transport layer 115R, a light emitting layer 117R, an electron transport layer 119R, a common layer 121, and a common electrode 123.
- the light emitting element 110G has a pixel electrode 111G, a hole injection layer 113G, a hole transport layer 115G, a light emitting layer 117G, an electron transport layer 119G, a common layer 121, and a common electrode 123.
- the light emitting element 110B has a pixel electrode 111B, a hole injection layer 113B, a hole transport layer 115B, a light emitting layer 117B, an electron transport layer 119B, a common layer 121, and a common electrode 123.
- the light receiving element 150 has a pixel electrode 111 PD, a hole transport layer 115 PD, a light receiving layer 157 , an electron transport layer 119 PD, a common layer 121 and a common electrode 123 .
- the common layer 121 functions as an electron injection layer in the light emitting device 110 .
- the common layer 121 functions as an electron transport layer in the light receiving element 150 . Therefore, the light receiving element 150 may not have the electron transport layer 119PD.
- the hole injection layer 113, the hole transport layer 115, the electron transport layer 119, and the common layer 121 can also be called functional layers.
- the pixel electrode 111, the hole injection layer 113, the hole transport layer 115, the light emitting layer 117, and the electron transport layer 119 can be separately provided for each element.
- the common layer 121 and the common electrode 123 are commonly provided for the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 150.
- the light emitting element 110 and the light receiving element 150 may have a hole blocking layer and an electron blocking layer in addition to the layers shown in FIGS. 6A and 6B. Further, the light-emitting element 110 and the light-receiving element 150 may have a layer containing a bipolar substance (a substance with high electron-transport properties and high hole-transport properties) or the like.
- a gap is provided between the common layer 121 and the insulating layer 131 . This can prevent the common layer 121 from contacting the side surfaces of the light-emitting layer 117 , the light-receiving layer 157 , the hole-transport layer 115 , and the hole-injection layer 113 . As a result, short circuits in the light emitting element 110 and short circuits in the light receiving element 150 can be suppressed.
- the distance is 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less, the gap can be preferably formed.
- the light-emitting element 110 includes, from the bottom, a pixel electrode 111, a hole-injection layer 113, a hole-transport layer 115, a light-emitting layer 117, an electron-transport layer 119, a common layer 121 (electron-injection layer), and a common electrode.
- the light receiving element 150 is provided with a pixel electrode 111PD, a hole transport layer 115PD, a light receiving layer 157, an electron transport layer 119PD, a common layer 121, and a common electrode 123 in this order from the bottom.
- one aspect of the present invention is not limited to this.
- the light emitting element 110 is provided with a pixel electrode, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and a common electrode in order from the bottom layer
- the light receiving element 150 is provided with the A pixel electrode, an electron transport layer, a light receiving layer, a hole transport layer, and a common electrode may be provided in order.
- the hole injection layer included in the light emitting element 110 can be used as a common layer, and the common layer can be provided between the hole transport layer included in the light receiving element 150 and the common electrode.
- the electron injection layer can be separated for each element.
- the electron-transporting layer is provided above the hole-transporting layer. Even if the transport layer is provided below the hole transport layer, the following description can be applied.
- the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
- highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
- the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
- a hole-transporting layer is a layer containing a hole-transporting material.
- the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
- hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other hole-transporting materials. High material is preferred.
- the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
- the electron-transporting layer is a layer containing an electron-transporting material.
- an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
- electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, and imidazole derivatives.
- oxazole derivatives thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other nitrogen-containing heteroaromatic compounds
- a material having a high electron-transport property such as an electron-deficient heteroaromatic compound can be used.
- the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
- Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
- a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
- Examples of the electron injection layer include lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2 -pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenoratritium (abbreviation: LiPPP) , lithium oxide (LiO x ), cesium carbonate, etc., alkaline earth metals, or compounds thereof.
- Liq lithium, cesium, lithium fluoride
- CsF cesium fluoride
- CaF 2 calcium fluoride
- Liq 8-(quinolinolato)lithium
- LiPP 2-(2 -pyridyl)phenoratritium
- LiPPy 2-(2-pyr
- a material having an electron transport property may be used as the electron injection layer.
- a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
- a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
- the lowest unoccupied molecular orbital (LUMO) of the organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less.
- CV cyclic voltammetry
- photoelectron spectroscopy optical absorption spectroscopy
- inverse photoemission spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
- BPhen 4,7-diphenyl-1,10-phenanthroline
- NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
- HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3
- Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
- fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. mentioned.
- Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
- organometallic complexes especially iridium complexes
- platinum complexes, rare earth metal complexes, etc. which are used as ligands, can be mentioned.
- the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
- One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
- Bipolar materials or TADF materials may also be used as one or more organic compounds.
- the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
- ExTET Exciplex-Triplet Energy Transfer
- a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized at the same time.
- the light-emitting layer 117R of the light-emitting element 110R contains a light-emitting organic compound that emits light having an intensity in at least the red wavelength range.
- a light-emitting layer 117G included in the light-emitting element 110G includes a light-emitting organic compound that emits light having an intensity in at least a green wavelength range.
- the light-emitting layer 117B included in the light-emitting element 110B contains a light-emitting organic compound that emits light having an intensity in at least a blue wavelength range.
- the light-receiving layer 157 of the light-receiving element 150 contains, for example, an organic compound having detection sensitivity in the visible light wavelength range.
- a conductive film that is transparent to visible light is used for one of the pixel electrode 111 and the common electrode 123, and a conductive film that is reflective is used for the other.
- the display device 10 can be a bottom emission type display device.
- the display device 10 can be a top emission type display device.
- the display device 10 can be a dual emission type display device.
- the light emitting device 110 preferably has a micro optical resonator (microcavity) structure.
- the light emitted from the light emitting layer 117 can be resonated between the pixel electrode 111 and the common electrode 123, and the light emitted from the light emitting element 110 can be enhanced.
- one of the common electrode 123 and the pixel electrode 111 is an electrode having both translucent and reflective properties (semi-transmissive/semi-reflective electrode).
- the other is preferably a reflective electrode (reflective electrode).
- the semi-transmissive/semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode (also referred to as a transparent electrode) having transparency to visible light.
- the transparent electrode can be called an optical adjustment layer.
- the light transmittance of the transparent electrode is set to 40% or more.
- the light-emitting element 110 preferably uses an electrode having a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm).
- the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
- the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
- the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
- the transmittance and reflectance of these electrodes for near-infrared light are preferably within the above numerical range. .
- An insulating layer 131 is provided to cover the edge of the pixel electrode 111R, the edge of the pixel electrode 111G, the edge of the pixel electrode 111B, and the edge of the pixel electrode 111PD.
- the ends of the insulating layer 131 are preferably tapered. Note that the insulating layer 131 may be omitted if unnecessary.
- the hole injection layer 113R, the hole injection layer 113G, the hole injection layer 113B, and the hole transport layer 115PD each have a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131.
- the edge of the hole injection layer 113R, the edge of the hole injection layer 113G, the edge of the hole injection layer 113B, and the edge of the hole transport layer 115PD are located on the insulating layer 131.
- a gap is provided between the light emitting elements 110 that emit light of different colors, for example, between two light emitting layers 117 .
- the light-emitting layer 117R, the light-emitting layer 117G, and the light-emitting layer 117B are preferably provided so as not to be in contact with each other. This can suitably prevent current from flowing through two adjacent light-emitting layers 117 and causing unintended light emission. Therefore, the contrast of the display device 10 can be increased, and thus the display quality of the display device 10 can be increased.
- a protective layer 125 is provided on the common electrode 123 .
- the protective layer 125 has a function of preventing impurities such as water from diffusing into each light emitting element from above.
- the protective layer 125 can have, for example, a single layer structure or a laminated structure including at least an inorganic insulating film.
- inorganic insulating films include oxide films and nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films.
- a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used for the protective layer 125 .
- a silicon oxynitride film indicates a film containing more oxygen than nitrogen as its composition.
- a silicon oxynitride film is a film containing more nitrogen than oxygen.
- the upper surface of the protective layer 125 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 125, an uneven shape due to the structure below may be formed. This is preferable because it can reduce the impact.
- a structure for example, a color filter, an electrode of a touch sensor, or a lens array
- FIG. 6C shows a cross-sectional configuration example of the display device 10 in the Y direction, and specifically shows a cross-sectional configuration example of the light emitting element 110R and the light receiving element 150.
- FIG. The light emitting elements 110G and 110B can also be arranged in the Y direction in the same manner as the light emitting elements 110R.
- FIG. 6D shows the connection portion 130 where the connection electrode 111C and the common electrode 123 are electrically connected.
- the common electrode 123 is provided on the connection electrode 111 ⁇ /b>C so as to be in contact therewith, and the protective layer 125 is provided to cover the common electrode 123 .
- an insulating layer 131 is provided to cover the end of the connection electrode 111C.
- FIG. 6E shows a cross-sectional configuration example of the light emitting element 110IR in addition to the cross-sectional configuration example of the light receiving element 150.
- the light emitting element 110IR has a pixel electrode 111IR, a hole injection layer 113IR, a hole transport layer 115IR, a light emitting layer 117IR, an electron transport layer 119IR, a common layer 121, and a common electrode 123.
- FIGS. 2A and 6A to 6D are cross-sectional schematic diagrams in each step of the manufacturing method of the display device illustrated below.
- 7A to 10C show a cross section corresponding to the dashed line A1-A2, a cross section corresponding to the dashed line B1-B2, and a cross section corresponding to the dashed line D1-D2 in FIG. 2A.
- the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). deposition) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like.
- the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, or the like. Also, one of the thermal CVD methods is the metal organic CVD (MOCVD) method.
- the thin film that constitutes the display device for example, a photolithography method can be used.
- the thin film may be processed by a nanoimprint method, a sandblast method, or a lift-off method.
- a photolithography method there are typically the following two methods.
- One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask.
- the other is a method of forming a photosensitive thin film, then performing exposure and development to process the thin film into a desired shape.
- the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
- ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
- extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
- An electron beam can also be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
- a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
- a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
- the substrate 101 is prepared.
- a substrate having heat resistance enough to withstand at least heat treatment performed later can be used.
- an insulating substrate is used as the substrate 101
- a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
- a semiconductor substrate such as a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium or the like, or an SOI substrate made of silicon, silicon carbide, or the like can be used.
- a pixel electrode 111R, a pixel electrode 111G, a pixel electrode 111B, a pixel electrode 111PD, and a connection electrode 111C are formed on the substrate 101.
- a conductive film to be a pixel electrode is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. After that, by removing the resist mask, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B can be formed.
- each pixel electrode When a conductive film that reflects visible light is used as each pixel electrode, it is preferable to use a material (for example, silver or aluminum) that has as high a reflectance as possible over the entire wavelength range of visible light. Thereby, not only can the light extraction efficiency of the light emitting element be improved, but also the color reproducibility can be improved.
- a material for example, silver or aluminum
- an insulating layer 131 is formed to cover end portions of the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, and the pixel electrode 111PD (FIG. 7A).
- an organic insulating film or an inorganic insulating film can be used as the insulating layer 131.
- the insulating layer 131 preferably has a tapered end in order to improve the step coverage of a film to be formed later.
- it is preferable to use a photosensitive material because the shape of the end portion can be easily controlled depending on the exposure and development conditions.
- an inorganic insulating film may be used as the insulating layer 131 .
- a functional film 113Rf that will later become the hole injection layer 113R is formed on the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the pixel electrode 111PD, and the insulating layer 131.
- a functional film 115Rf to be the hole transport layer 115R, a light emitting film 117Rf to be the light emitting layer 117R, and a functional film 119Rf to be the electron transport layer 119R are formed in this order.
- the functional film 113Rf, the functional film 115Rf, the light-emitting film 117Rf, and the functional film 119Rf can be formed by vapor deposition, sputtering, or inkjet, for example. Note that the method is not limited to this, and the film forming method described above can be used as appropriate.
- the functional film 113Rf, the functional film 115Rf, the light emitting film 117Rf, and the functional film 119Rf are preferably formed so as not to be provided on the connection electrode 111C.
- the functional film 113Rf, the functional film 115Rf, the light-emitting film 117Rf, and the functional film 119Rf are formed by vapor deposition or sputtering, the functional film 113Rf, the functional film 115Rf, the light-emitting film 117Rf, and the functional film are formed on the connection electrode 111C. It is preferable to use a shielding mask so that 119Rf is not deposited.
- a sacrificial film 141a is formed on the functional film 119Rf. Also, the sacrificial film 141a can be provided in contact with the upper surface of the connection electrode 111C.
- the sacrificial film 141a can be a film that can be removed by a wet etching method that causes little damage to the functional film 119Rf, the light emitting film 117Rf, the functional film 115Rf, and the functional film 113Rf.
- the sacrificial film 141a for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or the metal materials can be used.
- metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or the metal materials can be used.
- a low melting point material such as aluminum or silver.
- element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium
- M is preferably one or more selected from gallium, aluminum, and yttrium.
- an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide can be used.
- a material that can be dissolved in a chemically stable solvent as the sacrificial film 141a at least for the functional film 119Rf.
- a material that dissolves in water or alcohol can be suitably used for the sacrificial film 141a.
- the solvent can be removed at a low temperature in a short period of time by performing heat treatment in a reduced pressure atmosphere, thereby reducing thermal damage to the functional film 119Rf, the light emitting film 117Rf, the functional film 115Rf, and the functional film 113Rf. It is possible and preferable.
- a wet film formation method that can be used to form the sacrificial film 141a includes spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or the like. There are knife courts, etc.
- a protective film 143a is formed on the sacrificial film 141a (FIG. 7B).
- the protective film 143a is a film used as a hard mask when etching the sacrificial film 141a later. Further, the sacrificial film 141a is exposed when the protective film 143a is processed later. Therefore, the sacrificial film 141a and the protective film 143a are selected from a combination of films having a high etching selectivity. Therefore, a film that can be used for the protective film 143a can be selected according to the etching conditions for the sacrificial film 141a and the etching conditions for the protective film 143a.
- a gas containing fluorine also referred to as a fluorine-based gas
- An alloy containing molybdenum and niobium, an alloy containing molybdenum and tungsten, or the like can be used for the protective film 143a.
- films that can provide a high etching selectivity (that is, can reduce the etching rate) in dry etching using a fluorine-based gas include metal oxide films such as IGZO and ITO. This can be used for the sacrificial film 141a.
- the protective film 143a is not limited to this, and can be selected from various materials according to the etching conditions for the sacrificial film 141a and the etching conditions for the protective film 143a. For example, it can be selected from films that can be used for the sacrificial film 141a.
- a nitride film for example, can be used as the protective film 143a.
- a nitride film of silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, germanium nitride, or the like can also be used.
- the protective film 143a for example, an organic film that can be used for the light emitting film 117Rf may be used.
- an organic film for example, the light-emitting film 117Rf and a film forming apparatus can be used in common, which is preferable.
- a resist mask 145a is formed on the protective film 143a at a position overlapping with the pixel electrode 111R and at a position overlapping with the connection electrode 111C (FIG. 7C).
- the resist mask 145a can use a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.
- the resist mask 145a is formed on the sacrificial film 141a without forming the protective film 143a, if defects such as pinholes are present in the sacrificial film 141a, the solvent of the resist material dissolves the functional film 119Rf, for example. there is a risk of it happening.
- Using the protective film 143a can prevent such a problem from occurring.
- the resist mask 145a may be formed directly on the sacrificial film 141a without using the protective film 143a.
- a portion of the protective film 143a not covered with the resist mask 145a is removed by etching to form a protective layer 149a.
- a protective layer 149a is also formed on the connection electrode 111C at the same time.
- etching the protective film 143a it is preferable to use etching conditions with a high selectivity so that the sacrificial film 141a is not removed by the etching.
- Etching of the protective film 143a can be performed by wet etching or dry etching. By using dry etching, reduction of the pattern of the protective film 143a can be suppressed.
- the removal of the resist mask 145a can be performed by wet etching or dry etching.
- the resist mask 145a is preferably removed by dry etching (also referred to as plasma ashing) using an oxygen gas as an etching gas.
- the removal of the resist mask 145a is performed with the sacrificial film 141a provided on the functional film 119Rf. ing.
- the electrical characteristics may be adversely affected, so this is suitable for etching using oxygen gas such as plasma ashing.
- a portion of the sacrificial film 141a not covered with the protective layer 149a is removed by etching to form a sacrificial layer 147a (FIG. 8A).
- a sacrificial layer 147a is also formed on the connection electrode 111C at the same time.
- Etching of the sacrificial film 141a can be performed by wet etching or dry etching, but it is preferable to use a dry etching method because pattern shrinkage can be suppressed.
- the protective layer 149a is removed by etching, and parts of the functional film 119Rf, the light-emitting film 117Rf, the functional film 115Rf, and the functional film 113Rf that are not covered with the sacrificial layer 147a are removed by etching, and the electron transporting layers 119R and 113Rf are removed by etching.
- Emissive layer 117R, hole transport layer 115R, and hole injection layer 113R are formed (FIG. 8B).
- the functional film 119Rf, the light-emitting film 117Rf, the functional film 115Rf, and the functional film 113Rf are preferably etched by dry etching using an etching gas that does not contain oxygen as a main component.
- an etching gas that does not contain oxygen as a main component.
- the etching gas containing no oxygen as a main component include noble gases such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , H 2 and He.
- a mixed gas of the above gas and a diluent gas that does not contain oxygen can be used as an etching gas.
- a functional film 113Gf that will later become the hole injection layer 113G and later the hole transport layer 115G will be formed.
- a functional film 115Gf, a light-emitting film 117Gf that will later become the light-emitting layer 117G, and a functional film 119Gf that will later become the electron transport layer 119G are formed in this order.
- the description of the method of forming the functional film 113Rf, the functional film 115Rf, the light-emitting film 117Rf, and the functional film 119Rf is incorporated. can.
- a sacrificial film 141b is formed on the functional film 119Gf.
- the sacrificial film 141b can be formed by a method similar to that of the sacrificial film 141a. In particular, it is preferable to use the same material as the sacrificial film 141a for the sacrificial film 141b.
- a sacrificial film 141b is formed on the connection electrode 111C to cover the sacrificial layer 147a.
- a protective film 143b is formed on the sacrificial film 141b.
- the protective film 143b can be formed by the same method as the protective film 143a. In particular, it is preferable to use the same material as the protective film 143a for the protective film 143b.
- a resist mask 145b is formed on the protective film 143b in a region overlapping with the pixel electrode 111G and a region overlapping with the connection electrode 111C (FIG. 8C).
- the resist mask 145b can be formed by a method similar to that of the resist mask 145a.
- a portion of the protective film 143b that is not covered with the resist mask 145b is removed by etching to form a protective layer 149b.
- the protective layer 149b is also formed on the connection electrode 111C at the same time.
- the description of the protective film 143a can be used.
- the resist mask 145a is removed (FIG. 9A).
- the description of the resist mask 145a can be used.
- a portion of the sacrificial film 141b not covered with the protective layer 149b is removed by etching to form a sacrificial layer 147b.
- a sacrificial layer 147b is also formed on the connection electrode 111C at the same time.
- a sacrificial layer 147a and a sacrificial layer 147b are laminated on the connection electrode 111C.
- the above description of the sacrificial film 141a can be used.
- the protective layer 149b is removed by etching, and parts of the functional film 119Gf, the light emitting film 117Gf, the functional film 115Gf, and the functional film 113Gf that are not covered with the sacrificial layer 147b are removed by etching, and the electron transport layer 119G, Emissive layer 117G, hole transport layer 115G, and hole injection layer 113G are formed (FIG. 9B).
- the description of the functional film 119Rf, the light-emitting film 117Rf, the functional film 115Rf, the functional film 113Gf, and the protective layer 149b is used. can do.
- the electron-transporting layer 119R, the light-emitting layer 117R, the hole-transporting layer 115R, and the hole-injecting layer 113R are protected by the sacrificial layer 147a. It is possible to prevent the film 113Gf from being damaged in the etching process.
- the hole-injection layer 113R, the hole-transport layer 115R, the light-emitting layer 117R, and the electron-transport layer 119R, the hole-injection layer 113G, the hole-transport layer 115G, the light-emitting layer 117G, and the electron-transport layer 119G are formed. can be produced separately with high positional accuracy.
- a hole injection layer 113B, a hole transport layer 115B, a light emitting layer 117B, an electron transport layer 119B, and a sacrificial layer 147c can be formed by steps similar to those described above (FIG. 9C).
- a sacrificial layer 147a, a sacrificial layer 147b, and a sacrificial layer 147c are stacked on the connection electrode 111C.
- the hole-transporting layer 115PD, the light-receiving layer 157, the electron-transporting layer 115PD, the light-receiving layer 157, and the Layer 119PD and sacrificial layer 147d are formed (FIG. 9D).
- a sacrificial layer 147a, a sacrificial layer 147b, a sacrificial layer 147c, and a sacrificial layer 147d are laminated on the connection electrode 111C. Note that the electron transport layer 119PD may not be formed.
- the hole-transporting layer 113B, the hole-transporting layer 115B, the light-emitting layer 117B, the electron-transporting layer 119B, and the sacrificial layer 147c are formed, and then the hole-transporting layer is formed.
- a hole-injecting layer 113IR, a hole-transporting layer 115IR, a light-emitting layer 117IR, and an electron-transporting layer 119IR are formed by steps similar to those described above. , and a sacrificial layer. In this case, five sacrificial layers are laminated on the connection electrode 111C.
- the sacrificial layer 147a, the sacrificial layer 147b, the sacrificial layer 147c, and the sacrificial layer 147d are removed, and the top surface of the electron-transporting layer 119R, the top surface of the electron-transporting layer 119G, the top surface of the electron-transporting layer 119B, and the electron-transporting layer 119PD are removed.
- the top surface is exposed (FIG. 10A).
- the upper surface of the connection electrode 111C is also exposed at the same time.
- the sacrificial layer 147a, the sacrificial layer 147b, the sacrificial layer 147c, and the sacrificial layer 147d can be removed by wet etching or dry etching. At this time, it is preferable to use a method that does not damage the hole-injection layer 113, the hole-transport layer 115, the light-emitting layer 117, the light-receiving layer 157, and the electron-transport layer 119 as much as possible. In particular, it is preferable to use a wet etching method.
- TMAH tetramethylammonium hydroxide aqueous solution
- sacrificial layer 147a it is preferable to remove the sacrificial layer 147a, the sacrificial layer 147b, the sacrificial layer 147c, and the sacrificial layer 147d by dissolving them in a solvent such as water or alcohol.
- a solvent such as water or alcohol.
- various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol capable of dissolving the sacrificial layers 147a, 147b, 147c, and 147d. can.
- a drying treatment is preferably performed to remove water.
- heat treatment is preferably performed in an inert gas atmosphere or a reduced pressure atmosphere.
- the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 120° C.
- a reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
- the light-emitting layer 117R, the light-emitting layer 117G, the light-emitting layer 117B, the light-receiving layer 157, and the like can be separately produced.
- the common layer 121 is formed on the electron transport layer 119R, the electron transport layer 119G, the electron transport layer 119B, and the electron transport layer 119PD. As described above, an air gap may be formed between the common layer 121 and the insulating layer 131 .
- the common layer 121 can be formed, for example, by a vapor deposition method, a sputtering method, an inkjet method, or the like. When forming the common layer 121 by vapor deposition, it is preferable to use a shielding mask so that the common layer 121 is not formed on the connection electrode 111C.
- a common electrode 123 is formed covering the common layer 121 and the connection electrode 111C (FIG. 10B).
- the common electrode 123 can be formed by a film forming method such as vapor deposition or sputtering. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be stacked. At this time, it is preferable to form the common electrode 123 so as to include the region where the common layer 121 is formed. That is, the end portion of the common layer 121 can overlap with the common electrode 123 .
- the common electrode 123 is preferably formed using a shielding mask.
- the common electrode 123 is electrically connected to the connection electrode 111C outside the display section.
- a protective layer 125 is formed on the common electrode 123 (FIG. 10C).
- a sputtering method, a PECVD method, or an ALD method is preferably used for forming the inorganic insulating film used for the protective layer 125 .
- the ALD method is preferable because it has excellent step coverage and hardly causes defects such as pinholes.
- the display device 10 can be manufactured.
- the common electrode 123 and the common layer 121 are formed so as to have different upper surface shapes has been described above, they may be formed in the same region.
- FIG. 11A shows a schematic cross-sectional view after removing the sacrificial layer in the above. Subsequently, as shown in FIG. 11B, a common layer 121 and a common electrode 123 are formed using the same shielding mask or without using a shielding mask. This can reduce manufacturing costs compared to using different shielding masks.
- the common layer 121 is sandwiched between the connection electrode 111C and the common electrode 123 in the connection portion 130 .
- the common layer 121 it is preferable to use a material with as low electric resistance as possible.
- a protective layer 125 is formed.
- a protective layer 125 it is preferable to provide a protective layer 125 so as to cover the ends of the common electrode 123 and the ends of the common layer 121 . This can effectively prevent impurities such as water or oxygen from diffusing into the common layer 121 and the interface between the common layer 121 and the common electrode 123 from the outside.
- the light-emitting elements 110 can be manufactured separately without using a shadow mask such as a metal mask. Accordingly, the sub-pixels can be miniaturized and the aperture ratio of the pixels can be increased as compared with the case where the light-emitting elements 110 are separately manufactured using a shadow mask. In addition, since the light-emitting layer 117 can be formed separately, a display device with extremely vivid, high-contrast, and high-quality display can be realized.
- a pixel can be provided with a sub-pixel having a light-receiving element 150, and a pixel can be provided with a sub-pixel having a light-emitting element 110IR that emits infrared light.
- the display device of one embodiment of the present invention can prevent the pixel density from becoming small even in the case where a sub-pixel that does not contribute to display is provided in a pixel.
- the pixel density can be 400 ppi or greater, 1000 ppi or greater, 3000 ppi or greater, or 5000 ppi or greater.
- Configuration example 2 A configuration example of a display device that is partially different from configuration example 1 will be described below. In the following, explanations of parts that overlap with the above may be omitted.
- FIG. 12A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 2A.
- the display device 10 shown in FIG. 12A differs from the display device 10 shown in FIG. 2A in the shape of the common layer 121 and the shape of the common electrode 123 .
- the outlines of the common electrode 123 and the common layer 121 are indicated by dashed lines.
- FIG. 12B is a cross-sectional view corresponding to the dashed-dotted line C3-C4 in FIG. 12A, showing a cross section in the Y direction.
- common layers 121 and common electrodes 123 are separated between adjacent pixels.
- the common layer 121 and the common electrode 123 have ends in regions overlapping with the insulating layer 131 .
- FIG. 12C is an enlarged cross-sectional view of a part of the light receiving element 150 and the light emitting element 110R provided in adjacent pixels from FIG. 12B.
- a concave portion may be formed in a portion of the upper surface of the insulating layer 131 .
- the protective layer 125 is provided along the surface of the concave portion of the insulating layer 131 so as to be in contact therewith. This is preferable because the contact area between the insulating layer 131 and the protective layer 125 is increased and the adhesion between them is improved.
- a gap (also referred to as gap or space) 127 may be provided above the insulating layer 131 .
- the voids 127 are formed during the deposition of the protective layer 125 due to the high aspect ratio of the openings separating adjacent pixels.
- the air gap 127 may be under reduced pressure or at atmospheric pressure. It may also contain gas such as air, nitrogen, noble gas, or a film-forming gas used for film-forming the protective layer 125 .
- the light emitting element 110G and the light emitting element 110B can also have the same configuration.
- FIG. 13A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 12A.
- FIG. 13B is a cross-sectional view corresponding to the dashed-dotted line C5-C6 in FIG. 13A, showing a cross section in the Y direction.
- the common layer 121 and the common electrode 123 are separated not only between adjacent pixels but also between the same pixels. is different from the display device 10 shown in FIG.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- FIG. 14 is a perspective view showing a configuration example of the display device 100. As shown in FIG. The display device 100 has a structure in which a substrate 151 and a substrate 152 are bonded together. In FIG. 14, the substrate 152 is indicated by dashed lines.
- the display device 100 has a display section 162, a circuit 164, wiring 165, and the like.
- 14 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100. As shown in FIG. Therefore, the configuration shown in FIG. 14 can also be called a display module having a display device, an IC, and an FPC.
- the circuit 164 can be, for example, a gate driver.
- a signal and power can be supplied to the circuit 164 and the like through the wiring 165 .
- the signal and power can be input to the wiring 165 via the FPC 172 from the outside of the display device 10, for example.
- the signal and power can be generated by IC 173 and output to wiring 165 .
- FIG. 14 shows an example in which the IC 173 is provided on the substrate 151 by the COG (Chip On Glass) method, a TCP (Tape Carrier Package) method, a COF (Chip On Film) method, or the like may be used.
- COG Chip On Glass
- TCP Transmission Carrier Package
- COF Chip On Film
- FIG. 15 shows part of the area including the FPC 172, part of the area including the circuit 164, part of the area including the display section 162, and part of the area including the edge of the display device 100 shown in FIG. It is a figure which shows an example of a cross section. Note that the display device 100 shown in FIG. 15 is referred to as a display device 100A.
- the display device 100A has a transistor 201, a transistor 141, a transistor 142, a light emitting element 110, a light receiving element 150, and the like between the substrate 151 and the substrate 152.
- the substrate 152 and the insulating layer 214 are bonded via an adhesive layer 242 .
- a solid sealing structure, a hollow sealing structure, or the like can be applied for sealing the light emitting element 110 and the light receiving element 150 .
- a space 143 surrounded by the substrate 152, the adhesive layer 242, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, or the like) and has a hollow sealing structure.
- the adhesive layer 242 may be provided so as to overlap with the light emitting element 110 .
- a region surrounded by the substrate 152 , the adhesive layer 242 , and the insulating layer 214 may be filled with a resin different from the adhesive layer 242 .
- the pixel electrode 111 of the light emitting element 110 is electrically connected to the conductive layer 222b of the transistor 142 through an opening provided in the insulating layer 214.
- the transistor 142 has a function of controlling driving of the light emitting element 110 .
- a pixel electrode 111PD included in the light receiving element 150 is electrically connected to a conductive layer 222b included in the transistor 141 through an opening provided in the insulating layer 214 .
- the light emitted by the light emitting element 110 is emitted to the substrate 152 side.
- Light enters the light receiving element 150 through the substrate 152 and the space 143 . It is preferable to use a material having high transparency to visible light and infrared light for the substrate 152 .
- a light shielding layer 148 is provided on the surface of the substrate 152 on the substrate 151 side.
- the light shielding layer 148 has openings at positions overlapping with the light receiving element 150 and positions overlapping with the light emitting element 110 .
- a filter 146 for cutting ultraviolet light is provided at a position overlapping with the light receiving element 150 . Note that a configuration without the filter 146 is also possible.
- the transistors 201 , 141 , and 142 are all formed over the substrate 151 . These transistors can be made with the same material and the same process.
- An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided on the substrate 151 in this order.
- Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
- Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
- An insulating layer 215 is provided over the transistor.
- An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
- a material in which impurities such as water or hydrogen are difficult to diffuse for at least one insulating layer covering the transistor.
- inorganic insulating films are preferably used.
- the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
- a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film may be used.
- two or more of the insulating films described above may be laminated and used.
- An organic insulating film is preferably used for the insulating layer 214 that functions as a planarizing layer.
- materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
- the organic insulating film preferably has openings near the ends of the display device 100A. Thereby, it is possible to suppress diffusion of impurities from the end portion of the display device 100A through the organic insulating film.
- the organic insulating film may be formed so that the edges of the organic insulating film are positioned inside the edges of the display device 100A so that the organic insulating film is not exposed at the edges of the display device 100A.
- An opening is formed in the insulating layer 214 in a region 228 shown in FIG. As a result, even when an organic insulating film is used for the insulating layer 214 , diffusion of impurities from the outside into the display section 162 through the insulating layer 214 can be suppressed. Therefore, the reliability of the display device 100A can be improved.
- the transistor 201, the transistor 141, and the transistor 142 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as sources and drains, a semiconductor layer 231, and a gate insulating layer. It has an insulating layer 213 functioning as a gate and a conductive layer 223 functioning as a gate.
- the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
- the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
- the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
- the structure of the transistor included in the display device of this embodiment There is no particular limitation on the structure of the transistor included in the display device of this embodiment.
- a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
- a top-gate transistor structure or a bottom-gate transistor structure may be used.
- gates may be provided above and below a semiconductor layer in which a channel is formed.
- a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 , 141 , and 142 .
- a transistor may be driven by connecting two gates and applying the same signal to them.
- one of the two gates may be supplied with a potential for controlling the threshold voltage of the transistor and the other may be supplied with a potential for driving.
- crystallinity of a semiconductor material used for a transistor there is no particular limitation on the crystallinity of a semiconductor material used for a transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having a crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystal region in part) can be used. semiconductor) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration of transistor characteristics can be suppressed.
- a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
- the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon, crystalline silicon (low temperature polysilicon, single crystal silicon, etc.), and the like.
- the metal oxide preferably contains at least indium or zinc as described above. In particular, it preferably contains indium and zinc.
- aluminum, gallium, yttrium, tin, or the like is preferably contained.
- one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
- the transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures.
- the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
- the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
- a connecting portion 204 is provided in a region on the substrate 151 where the substrate 152 does not overlap.
- the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 244 .
- a conductive layer 166 obtained by processing the same conductive film as the pixel electrode 111 is exposed on the upper surface of the connection portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 244 .
- optical members can be arranged outside the substrate 152 .
- optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, and light collecting films.
- an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, or an impact absorption layer, etc. are arranged on the outside of the substrate 152 .
- Glass, quartz, ceramics, sapphire, resin, or the like can be used for the substrates 151 and 152 .
- various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used.
- these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
- a material with low moisture permeability such as epoxy resin is preferable.
- a two-liquid mixed type resin may be used.
- an adhesive sheet may be used.
- connection layer 244 an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.
- ACF anisotropic conductive film
- ACP anisotropic conductive paste
- materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer structure or a laminated structure.
- conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-containing zinc oxide can be used, or graphene can be used.
- metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing these metal materials can be used.
- a nitride of the metal material for example, titanium nitride
- it is preferably thin enough to have translucency.
- a stacked film of any of the above materials can be used as the conductive layer.
- a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.
- These can also be used for various wirings and conductive layers such as electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) included in display elements.
- Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
- FIG. 16 is a cross-sectional view showing a configuration example of the display device 100B, which is a modification of the display device 100A.
- the display device 100B differs from the display device 100A in that it has a substrate 153, an adhesive layer 155, and an insulating layer 212 instead of the substrate 151, and a substrate 154, an adhesive layer 156, and an insulating layer 158 instead of the substrate 152. different from
- a substrate 153 and an insulating layer 212 are bonded together by an adhesive layer 155. Also, the substrate 154 and the insulating layer 158 are bonded together by an adhesive layer 156 .
- a second manufacturing substrate provided with a filter 146 and the like is attached with an adhesive layer 242 .
- a substrate 153 is attached using an adhesive layer 155 to the surface exposed by peeling the first manufacturing substrate.
- each component formed over the first manufacturing substrate is transferred to the substrate 153 .
- a substrate 154 is attached using an adhesive layer 156 to the surface exposed by peeling the second manufacturing substrate.
- each component formed over the second manufacturing substrate is transferred to the substrate 154 .
- each of the substrates 153 and 154 has flexibility. This allows the display device 100B to have flexibility. That is, the display device 100B can be used as a flexible display.
- the inorganic insulating films that can be used for the insulating layers 211, 213, and 215 can be used for the insulating layers 212 and 158, respectively.
- FIG. 17 is a cross-sectional view showing a configuration example of the display device 100C.
- the display device 100C has a substrate 301, a light emitting element 110, a light receiving element 150, a capacitor 240, and a transistor 310.
- the substrate 301 corresponds to the substrate 151 in FIG. 14, for example.
- a transistor 310 is a transistor having a channel formation region in the substrate 301 .
- the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
- Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
- the conductive layer 311 functions as a gate electrode.
- An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
- the low resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain.
- the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
- a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
- An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .
- the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
- the conductive layer 241 functions as one electrode of the capacitor 240
- the conductive layer 245 functions as the other electrode of the capacitor 240
- the insulating layer 243 functions as the dielectric of the capacitor 240 .
- the conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254 .
- the conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 embedded in the insulating layer 261 .
- An insulating layer 243 is provided over the conductive layer 241 .
- the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
- An insulating layer 255 is provided to cover the capacitor 240 , and the light emitting element 110 , the light receiving element 150 and the like are provided on the insulating layer 255 .
- a protective layer 125 is provided on the light-emitting element 110 and the light-receiving element 150 , and a substrate 420 is attached to the upper surface of the protective layer 125 with a resin layer 419 .
- the substrate 420 corresponds to the substrate 152 in FIG. 14, for example.
- the pixel electrode 111 of the light-emitting element 110 and the pixel electrode 111PD of the light-receiving element 150 are connected to the insulating layer 255 and the plug 256 embedded in the insulating layer 243, the conductive layer 241 embedded in the insulating layer 254, and the insulating layer 261. It is electrically connected to one of the source or drain of transistor 310 by buried plug 271 .
- FIG. 18 is a cross-sectional view showing a configuration example of the display device 100D.
- the display device 100D mainly differs from the display device 100C in that the transistor configuration is different. Note that the description of the same parts as those of the display device 100C may be omitted.
- the transistor 320 is a transistor in which a metal oxide is applied to a semiconductor layer in which a channel is formed (hereinafter also referred to as an OS transistor).
- the transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.
- the substrate 331 corresponds to the substrate 151 in FIG. 14, for example.
- An insulating layer 332 is provided on the substrate 331 .
- the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
- a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
- the semiconductor layer 321 is provided on the insulating layer 326 .
- the semiconductor layer 321 preferably has a metal oxide film having semiconductor properties.
- a pair of conductive layers 325 are provided on and in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.
- An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325, the side surface of the semiconductor layer 321, and the like, and the insulating layer 264 is provided over the insulating layer 328.
- the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
- an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
- An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
- the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
- the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
- the upper surface of the conductive layer 324, the upper surface of the insulating layer 323, and the upper surface of the insulating layer 264 are planarized so that their heights are approximately the same, and the insulating layers 329 and 265 are provided to cover them.
- the insulating layers 264 and 265 function as interlayer insulating layers.
- the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
- an insulating film similar to the insulating layers 328 and 332 can be used.
- a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 , 264 and 328 .
- the plug 274 includes a conductive layer 274a that covers the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
- the configuration from the insulating layer 254 to the substrate 420 in the display device 100D is similar to that of the display device 100C.
- FIG. 19 is a cross-sectional view showing a configuration example of the display device 100E.
- the display device 100E has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked. It should be noted that descriptions of portions similar to those of the display device 100C or the display device 100D may be omitted.
- a pixel circuit not only a pixel circuit but also a driver circuit and the like can be formed directly under the light-emitting element, so that the size of the display device can be reduced compared to the case where the driver circuit is provided around the display portion. becomes possible.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a structure having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 20A is called a single structure in this specification.
- FIG. 20B is a modification of the EL layer 686 included in the light emitting element shown in FIG. 20A. Specifically, the light-emitting element shown in FIG. layer 4420-1, layer 4420-2 on layer 4420-1, and electrode 688 on layer 4420-2. For example, if electrode 672 were the anode and electrode 688 was the cathode, layer 4430-1 would function as a hole injection layer, layer 4430-2 would function as a hole transport layer, and layer 4420-1 would function as an electron transport layer. and layer 4420-2 functions as an electron injection layer.
- layer 4430-1 functions as an electron-injecting layer
- layer 4430-2 functions as an electron-transporting layer
- layer 4420-1 functions as a hole-transporting layer. function
- layer 4420-2 functions as a hole injection layer.
- tandem structure a structure in which a plurality of light emitting units (EL layers 686a and 686b) are connected in series via an intermediate layer (charge generating layer) 4440 is referred to as a tandem structure in this specification.
- the configuration as shown in FIG. 20D is referred to as a tandem structure, but the configuration is not limited to this, and for example, the tandem structure may be referred to as a stack structure. Note that a light-emitting element capable of emitting light with high luminance can be obtained by adopting a tandem structure.
- the layers 4420 and 4430 may have a laminated structure of two or more layers as shown in FIG. 20B.
- the power consumption can be reduced in the order of the SBS structure, the tandem structure, and the single structure. If it is desired to keep the power consumption low, it is preferable to use the SBS structure.
- the single structure and the tandem structure are preferable because the manufacturing process is simpler than the SBS structure, so that the manufacturing cost can be reduced or the manufacturing yield can be increased.
- the emission color of the light-emitting element can be red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material forming the EL layer 686 .
- the color purity can be further increased by providing the light-emitting element with a microcavity structure.
- a light-emitting element that emits white light preferably has a structure in which two or more kinds of light-emitting substances are contained in the light-emitting layer.
- two or more kinds of light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
- a light-emitting element that emits white light as a whole can be obtained.
- the light-emitting layer preferably contains two or more light-emitting substances that emit light such as R (red), G (green), B (blue), Y (yellow), or O (orange).
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- a display device of one embodiment of the present invention includes a top-emission type in which light is emitted in a direction opposite to a substrate provided with a light-emitting element, a bottom-emission type in which light is emitted toward a substrate provided with a light-emitting element, and a double-sided display device. It may be of any dual-emission type that emits light to .
- a top emission type display device will be described as an example.
- a light-emitting layer 383 may be used when describing items common to the light-emitting layer 383R, the light-emitting layer 383G, and the like.
- the display device 380A shown in FIG. 21A includes a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.
- Each light emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, a light emitting layer, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 which are stacked in this order.
- the light emitting element 370R has a light emitting layer 383R
- the light emitting element 370G has a light emitting layer 383G
- the light emitting element 370B has a light emitting layer 383B.
- the light-emitting layer 383R has a light-emitting material that emits red light
- the light-emitting layer 383G has a light-emitting material that emits green light
- the light-emitting layer 383B has a light-emitting material that emits blue light.
- the light-emitting element is an electroluminescence element that emits light toward the common electrode 375 by applying a voltage between the pixel electrode 371 and the common electrode 375 .
- the light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 which are laminated in this order.
- the light receiving element 370PD is a photoelectric conversion element that receives light incident from the outside of the display device 380A and converts it into an electric signal.
- the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode in both the light-emitting element and the light-receiving element.
- the light receiving element by driving the light receiving element with a reverse bias applied between the pixel electrode 371 and the common electrode 375, the light incident on the light receiving element can be detected, electric charge can be generated, and the electric charge can be extracted as a current.
- an organic compound is used for the active layer 373 of the light receiving element 370PD.
- the light-receiving element 370PD can share layers other than the active layer 373 with those of the light-emitting element. Therefore, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light-emitting element. Also, the light emitting element and the light receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing steps.
- the display device 380A shows an example in which the light receiving element 370PD and the light emitting element have a common configuration except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are separately formed.
- the configuration of the light receiving element 370PD and the light emitting element is not limited to this.
- the light receiving element 370PD and the light emitting element may have layers that are made separately from each other. It is preferable that the light-receiving element 370PD and the light-emitting element have at least one layer (common layer) used in common. As a result, the light-receiving element 370PD can be incorporated in the display device without significantly increasing the number of manufacturing steps.
- a conductive film that transmits visible light is used for the electrode on the light extraction side of the pixel electrode 371 and the common electrode 375 .
- a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
- the light-emitting element has at least a light-emitting layer 383 .
- layers other than the light-emitting layer 383 include a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, and an electron-blocking material.
- a layer containing a bipolar substance a substance with high electron-transport properties and high hole-transport properties
- the light-emitting element and the light-receiving element may have one or more layers in common among the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
- the light-emitting element and the light-receiving element can each have one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.
- n-type semiconductor material of the active layer 373 examples include electron-accepting organic semiconductor materials such as fullerene (for example, C 60 or C 70 ) or fullerene derivatives.
- Fullerenes have a soccer ball-like shape, which is energetically stable.
- Fullerene has both deep (low) HOMO and LUMO levels. Since fullerene has a deep LUMO level, it has an extremely high electron-accepting property (acceptor property).
- acceptor property Normally, like benzene, when the ⁇ -electron conjugation (resonance) spreads in the plane, the electron-donating property (donor property) increases. , the electron acceptability becomes higher.
- a high electron-accepting property is useful as a light-receiving element because charge separation occurs quickly and efficiently.
- Both C 60 and C 70 have broad absorption bands in the visible light region, and C 70 is particularly preferable because it has a larger ⁇ -electron conjugated system than C 60 and has a wide absorption band in the long wavelength region.
- Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, or quinone derivatives etc.
- Materials for the p-type semiconductor of the active layer 373 include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin Electron-donating organic semiconductor materials such as phthalocyanine (SnPc) and quinacridone are included.
- CuPc copper
- DBP tetraphenyldibenzoperiflanthene
- ZnPc zinc phthalocyanine
- Electron-donating organic semiconductor materials such as phthalocyanine (SnPc) and quinacridone are included.
- Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
- materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives and the like.
- the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
- the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
- a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
- the active layer 373 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
- the active layer 373 may be formed by laminating an n-type semiconductor and a p-type semiconductor.
- Both low-molecular-weight compounds and high-molecular-weight compounds can be used for the light-emitting element and the light-receiving element, and inorganic compounds may be included.
- the layers constituting the light-emitting element and the light-receiving element can each be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
- hole-transporting materials include polymer compounds such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), molybdenum oxide, and copper iodide (CuI).
- Inorganic compounds such as can be used.
- an inorganic compound such as zinc oxide (ZnO) can be used as the electron-transporting material.
- Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2 functioning as a donor is added to the active layer 373.
- Polymer compounds such as 1,3-diyl]]polymer (abbreviation: PBDB-T) or PBDB-T derivatives can be used.
- PBDB-T 1,3-diyl]
- PBDB-T PBDB-T
- PBDB-T derivatives can be used.
- a method of dispersing an acceptor material in PBTB-T or a PBDB-T derivative can be used.
- the active layer 373 may be made by mixing three or more kinds of materials.
- a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
- the third material may be a low-molecular compound or a high-molecular compound.
- a display device 380B shown in FIG. 21B differs from the display device 380A in that the light receiving element 370PD and the light emitting element 370R have the same configuration.
- the light receiving element 370PD and the light emitting element 370R have the active layer 373 and the light emitting layer 383R in common.
- the light-receiving element 370PD has a common configuration with a light-emitting element that emits light with a longer wavelength than the light to be detected.
- the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting elements 370R and 370G.
- the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.
- the number of film forming processes and the number of masks are reduced compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have layers that are separately formed. can be reduced. Therefore, manufacturing steps and manufacturing costs of the display device can be reduced.
- the margin for misalignment can be narrowed compared to a structure in which the light receiving element 370PD and the light emitting element 370R have separate layers. .
- the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. This can extend the life of the light emitting element.
- the display device can express high luminance. Also, it is possible to increase the definition of the display device.
- the light-emitting layer 383R has a light-emitting material that emits red light.
- the active layer 373 comprises an organic compound that absorbs light of wavelengths shorter than red (eg, one or both of green light and blue light).
- the active layer 373 preferably contains an organic compound that hardly absorbs red light and absorbs light with a wavelength shorter than that of red light. As a result, red light is efficiently extracted from the light emitting element 370R, and the light receiving element 370PD can detect light with a shorter wavelength than red light with high accuracy.
- the display device 380B an example in which the light emitting element 370R and the light receiving element 370PD have the same configuration is shown, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers with different thicknesses.
- a display device 380C shown in FIGS. 22A and 22B has a light receiving/emitting element 370SR, a light emitting element 370G, and a light emitting element 370B which emit red (R) light and have a light receiving function.
- the display device 380A can be used for the configuration of the light emitting element 370G and the light emitting element 370B.
- the light emitting/receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.
- the light emitting/receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.
- FIG. 22A shows a case where the light emitting/receiving element 370SR functions as a light emitting element.
- FIG. 22A shows an example in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light receiving/emitting element 370SR emits red light.
- FIG. 22B shows a case where the light emitting/receiving element 370SR functions as a light receiving element.
- FIG. 22B shows an example in which the light receiving/emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.
- the light emitting element 370B, the light emitting element 370G, and the light emitting/receiving element 370SR each have a pixel electrode 371 and a common electrode 375.
- a case where the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode will be described as an example.
- the light emitting/receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, thereby detecting light incident on the light emitting/receiving element 370SR, generating electric charge, and extracting it as a current. .
- the light emitting/receiving element 370SR can be said to have a structure in which an active layer 373 is added to the light emitting element.
- the light emitting/receiving element 370SR can be formed in parallel with the formation of the light emitting element simply by adding the step of forming the active layer 373 to the manufacturing process of the light emitting element.
- the light emitting element and the light emitting/receiving element can be formed on the same substrate. Therefore, one or both of an imaging function and a sensing function can be imparted to the display portion without significantly increasing the number of manufacturing steps.
- the stacking order of the light emitting layer 383R and the active layer 373 is not limited. 22A and 22B show an example in which an active layer 373 is provided on a hole transport layer 382 and a light emitting layer 383R is provided on the active layer 373. FIG. The stacking order of the light emitting layer 383R and the active layer 373 may be changed.
- the light receiving and emitting element may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
- the light receiving and emitting device may have other functional layers such as a hole blocking layer and an electron blocking layer.
- a conductive film that transmits visible light is used for the electrode on the light extraction side.
- a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
- each layer constituting the light emitting/receiving element is the same as the functions and materials of the layers constituting the light emitting element and the light receiving element, so detailed description thereof will be omitted.
- 22C to 22G show examples of laminated structures of light receiving and emitting elements.
- the light emitting and receiving element shown in FIG. 22C includes a first electrode 377, a hole injection layer 381, a hole transport layer 382, a light emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and a second electrode. 378.
- FIG. 22C is an example in which a light emitting layer 383R is provided on the hole transport layer 382 and an active layer 373 is laminated on the light emitting layer 383R.
- the active layer 373 and the light emitting layer 383R may be in contact with each other.
- a buffer layer is preferably provided between the active layer 373 and the light emitting layer 383R.
- the buffer layer preferably has hole-transporting properties and electron-transporting properties.
- at least one of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole block layer, an electron block layer, and the like can be used as the buffer layer.
- FIG. 22D shows an example of using a hole transport layer 382 as a buffer layer.
- a buffer layer between the active layer 373 and the light emitting layer 383R By providing a buffer layer between the active layer 373 and the light emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light emitting layer 383R to the active layer 373.
- the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light emitting/receiving element having a buffer layer between the active layer 373 and the light emitting layer 383R can provide high light emitting efficiency.
- FIG. 22E is an example having a layered structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light emitting layer 383R are layered on the hole injection layer 381 in this order.
- the hole transport layer 382-2 functions as a buffer layer.
- the hole transport layer 382-1 and the hole transport layer 281-2 may contain the same material, or may contain different materials. Further, the above layer that can be used for the buffer layer may be used instead of the hole-transport layer 281-2. Also, the positions of the active layer 373 and the light emitting layer 383R may be exchanged.
- the light emitting/receiving element shown in FIG. 22F differs from the light emitting/receiving element shown in FIG. 22A in that it does not have a hole transport layer 382 .
- the light receiving and emitting device may not have at least one of the hole injection layer 381, the hole transport layer 382, the electron transport layer 384, and the electron injection layer 385.
- the light receiving and emitting device may have other functional layers such as a hole blocking layer and an electron blocking layer.
- the light emitting/receiving element shown in FIG. 22G differs from the light emitting/receiving element shown in FIG. 22A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves both as a light emitting layer and an active layer.
- Layers that serve as both a light-emitting layer and an active layer include, for example, an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R.
- a layer containing three materials can be used.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc.
- aluminum, gallium, yttrium, tin, or the like is preferably contained.
- one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
- the metal oxide can be formed by sputtering, CVD such as MOCVD, or ALD.
- Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (polycrystal) and the like.
- the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
- XRD X-ray diffraction
- it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
- GIXD Gram-Incidence XRD
- the GIXD method is also called a thin film method or a Seemann-Bohlin method.
- the shape of the peak of the XRD spectrum is almost bilaterally symmetrical.
- the peak shape of the XRD spectrum is left-right asymmetric.
- the asymmetric shape of the peaks in the XRD spectra clearly indicates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
- the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
- a diffraction pattern also referred to as a nano beam electron diffraction pattern
- NBED nano beam electron diffraction
- a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state.
- a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is neither crystalline nor amorphous, but in an intermediate state and cannot be concluded to be in an amorphous state.
- oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
- CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
- a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
- CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
- the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
- each of the plurality of crystal regions is composed of one or more minute crystals (crystals having a maximum diameter of less than 10 nm).
- the maximum diameter of the crystalline region is less than 10 nm.
- the size of the crystal region may be about several tens of nanometers.
- CAAC-OS contains indium (In) and oxygen.
- a tendency to have a layered crystal structure also referred to as a layered structure in which a layer (hereinafter referred to as an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter referred to as a (M, Zn) layer) are stacked.
- the (M, Zn) layer may contain indium.
- the In layer contains the element M.
- the In layer may contain Zn.
- the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
- a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
- a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
- the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit cell is not always a regular hexagon and may be a non-regular hexagon. Moreover, the distortion may have a lattice arrangement of pentagons, heptagons, or the like. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, or the bond distance between atoms changes due to the substitution of metal atoms. It is considered to be for
- a crystal structure in which clear grain boundaries are confirmed is called a polycrystal.
- a crystal grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-state current of a transistor, a decrease in field-effect mobility, or the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
- a structure containing Zn is preferable for forming a CAAC-OS.
- In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
- CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
- a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
- CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
- nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
- the nc-OS has minute crystals.
- the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
- nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
- an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
- an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
- an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
- an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
- an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
- An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
- An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
- CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
- one or more metal elements are unevenly distributed in the metal oxide, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
- the mixed state is also called a mosaic shape or a patch shape.
- CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
- the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In--Ga--Zn oxide are denoted by [In], [Ga], and [Zn], respectively.
- the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
- the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
- the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
- the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
- the first region is a region whose main components are indium oxide, indium zinc oxide, and the like.
- the second region is a region containing gallium oxide, gallium zinc oxide, and the like as main components. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
- a clear boundary between the first region and the second region may not be observed.
- the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
- a CAC-OS can be formed, for example, by a sputtering method under the condition that the substrate is not intentionally heated.
- a sputtering method one or more selected from inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film formation gas. good.
- inert gas typically argon
- oxygen gas oxygen gas
- nitrogen gas nitrogen gas
- a region containing In as a main component is obtained by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
- EDX energy dispersive X-ray spectroscopy
- the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
- the second region is a region with higher insulation than the first region.
- the leakage current can be suppressed by distributing the second region in the metal oxide.
- CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act in a complementary manner to provide a switching function (turning ON/OFF). functions) can be given to the CAC-OS.
- a part of the material has a conductive function
- a part of the material has an insulating function
- the whole material has a semiconductor function.
- CAC-OS is most suitable for various semiconductor devices including display devices.
- Oxide semiconductors have a variety of structures, each with different characteristics.
- An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
- an oxide semiconductor with low carrier concentration is preferably used for a transistor.
- the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
- the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
- a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
- an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
- the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
- Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
- the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
- the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
- the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
- the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
- oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
- part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
- the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- the display device of one embodiment of the present invention can be provided in various electronic devices.
- electronic devices with relatively large screens such as televisions, desktop or notebook computers, tablet computers, monitors for computers, digital signage, large game machines such as pachinko machines, and digital cameras , a digital video camera, a digital photo frame, a portable game machine, a personal digital assistant, a sound player, or the like can be provided with the display device of one embodiment of the present invention.
- Structural examples of electronic devices which can be provided with the display device of one embodiment of the present invention are described with reference to FIGS. 23A to 23E.
- FIG. 23A is a diagram showing an example of the oxygen concentration meter 900.
- the oximeter 900 has a housing 911 and a light emitting/receiving device 912 .
- a housing 911 is provided with a cavity, and a light emitting/receiving device 912 is provided so as to be in contact with the wall surface of the cavity.
- the light receiving and emitting device 912 has a function as a light source that emits light and a function as a sensor that detects light. For example, when an object is placed in the hollow portion of the housing 911, the light receiving/emitting device 912 can detect light emitted by the light emitting/receiving device 912, applied to the object, and reflected from the object.
- the oximeter 900 can measure the oxygen saturation by detecting the intensity of the reflected light with the light emitting/receiving device 912 .
- the oximeter 900 can be, for example, a pulse oximeter.
- the display device of one embodiment of the present invention can be applied to the light receiving and emitting device 912 .
- the light emitting/receiving device 912 has at least a light emitting element that emits red light (R).
- the light receiving and emitting device 912 preferably has a light emitting element that emits infrared light (IR).
- the red light (R) reflectance of hemoglobin bound to oxygen differs significantly from the red light (R) reflectance of hemoglobin not bound to oxygen.
- the difference between the infrared light (IR) reflectance of hemoglobin bound with oxygen and the infrared light (IR) reflectance of hemoglobin not bound with oxygen is small.
- the light receiving and emitting device 912 has not only a light emitting element that emits red light (R) but also a light emitting element that emits infrared light (IR), so that the oximeter 900 can measure the oxygen saturation with high accuracy. be able to.
- the light emitting and receiving device 912 preferably has flexibility. Since the light emitting/receiving device 912 has flexibility, the light emitting/receiving device 912 can have a curved shape. As a result, for example, the finger can be irradiated with light with good uniformity, and oxygen saturation can be measured with high accuracy, for example.
- FIG. 23B is a diagram showing an example of a portable data terminal 9100.
- FIG. A portable data terminal 9100 includes a display portion 9110, a housing 9101, keys 9102, speakers 9103, and the like.
- Portable data terminal 9100 may be, for example, a tablet.
- a key such as the key 9102 can be a key for switching on/off of power, for example. That is, a key such as key 9102 can be, for example, a power switch.
- the keys such as the key 9102 can be operation keys used for causing the electronic device to perform desired operations, for example.
- the display unit 9110 can display information 9104, operation buttons (also referred to as operation icons or simply icons) 9105, and the like.
- the display portion 9110 can function as a touch sensor or a near-touch sensor.
- FIG. 23C is a diagram showing an example of the digital signage 9200.
- the digital signage 9200 can be configured such that a display portion 9210 is attached to a pillar 9201 .
- the display portion 9210 can function as a touch sensor or a near-touch sensor.
- FIG. 23D is a diagram showing an example of a mobile information terminal 9300.
- FIG. A mobile information terminal 9300 includes a display portion 9310, a housing 9301, a speaker 9302, a camera 9303, keys 9304, connection terminals 9305, 9306, and the like.
- the mobile information terminal 9300 can be a smart phone, for example.
- the connection terminal 9305 can be, for example, microUSB, lighting, Type-C, or the like.
- the connection terminal 9306 can be an earphone jack, for example.
- an operation button 9307 can be displayed on the display unit 9310.
- Information 9308 can be displayed on the display portion 9310 .
- An example of the information 9308 is a display that notifies an incoming e-mail, SNS (social networking service), or a phone call, the title of the e-mail or SNS, the name of the sender of the e-mail or SNS, the date and time, the battery remaining amount, radio wave strength, etc.
- FIG. 23E is a diagram showing an example of a wristwatch-type mobile information terminal 9400.
- FIG. A portable information terminal 9400 includes a display portion 9410, a housing 9401, a wristband 9402, keys 9403, connection terminals 9404, and the like.
- the connection terminals 9404 can be, for example, microUSB, lighting, or Type-C, like the connection terminals 9305 and the like.
- the display portion 9410 can function as a touch sensor or a near-touch sensor.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Human Computer Interaction (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
図2A及び図2Bは、表示装置の構成例を示す上面図である。
図3A及び図3Bは、表示装置の構成例を示す上面図である。
図4Aは、表示装置の構成例を示す上面図である。図4Bは、受光素子の受光範囲を示す図である。
図5は、表示装置の構成例を示す上面図である。
図6A乃至図6Eは、表示装置の構成例を示す断面図である。
図7A乃至図7Dは、表示装置の作製方法例を示す断面図である。
図8A乃至図8Cは、表示装置の作製方法例を示す断面図である。
図9A乃至図9Dは、表示装置の作製方法例を示す断面図である。
図10A乃至図10Cは、表示装置の作製方法例を示す断面図である。
図11A乃至図11Cは、表示装置の作製方法例を示す断面図である。
図12Aは、表示装置の構成例を示す上面図である。図12B及び図12Cは、表示装置の構成例を示す断面図である。
図13Aは、表示装置の構成例を示す上面図である。図13Bは、表示装置の構成例を示す断面図である。
図14は、表示装置の構成例を示す斜視図である。
図15は、表示装置の構成例を示す断面図である。
図16は、表示装置の構成例を示す断面図である。
図17は、表示装置の構成例を示す断面図である。
図18は、表示装置の構成例を示す断面図である。
図19は、表示装置の構成例を示す断面図である。
図20A乃至図20Dは、発光素子の構成例を示す断面図である。
図21A及び図21Bは、表示装置の構成例を示す図である。
図22A乃至図22Gは、表示装置の構成例を示す図である。
図23A乃至図23Eは、電子機器の一例を示す図である。
本実施の形態では、本発明の一態様の表示装置の構成例、及び表示装置の作製方法の一例について説明する。
図2Aは、本発明の一態様の表示装置10の構成例を示す上面概略図である。表示装置10は、赤色光を発する発光素子110R、緑色光を発する発光素子110G、青色光を発する発光素子110B、及び受光素子150をそれぞれ複数有する。図2Aでは、各発光素子110の区別を簡単にするため、各発光素子110の発光領域内にR、G、Bの符号を付している。また、各受光素子150の受光領域内にPDの符号を付している。
以下では、本発明の一態様の表示装置の作製方法の一例について、図面を参照して説明する。ここでは、図2A、及び図6A乃至図6Dに示す表示装置10の作製方法を例に挙げて説明する。図7A乃至図10Cは、以下で例示する表示装置の作製方法の、各工程における断面概略図である。図7A乃至図10Cでは、図2A中の一点鎖線A1−A2に対応する断面、一点鎖線B1−B2に対応する断面、及び一点鎖線D1−D2に対応する断面を示している。
以下では、上記構成例1とは一部の構成が異なる表示装置の構成例について説明する。以下では上記と重複する部分については説明を省略する場合がある。
本実施の形態では、本発明の一態様の表示装置の構成例について説明する。
図14は、表示装置100の構成例を示す斜視図である。表示装置100は、基板151と基板152が貼り合わされた構成を有する。図14では、基板152を破線で示している。
図16は、表示装置100Bの構成例を示す断面図であり、表示装置100Aの変形例である。表示装置100Bは、基板151の代わりに基板153、接着層155、及び絶縁層212を有する点、及び基板152の代わりに基板154、接着層156、及び絶縁層158を有する点が、表示装置100Aと異なる。
図17は、表示装置100Cの構成例を示す断面図である。表示装置100Cは、基板301、発光素子110、受光素子150、容量240、及びトランジスタ310を有する。基板301は、例えば図14における基板151に相当する。
図18は、表示装置100Dの構成例を示す断面図である。表示装置100Dは、トランジスタの構成が異なる点で、表示装置100Cと主に相違する。なお、表示装置100Cと同様の部分については説明を省略することがある。
図19は、表示装置100Eの構成例を示す断面図である。表示装置100Eは、基板301にチャネルが形成されるトランジスタ310と、チャネルが形成される半導体層に金属酸化物を含むトランジスタ320とが積層された構成を有する。なお、表示装置100C、又は表示装置100Dと同様の部分については説明を省略することがある。
本実施の形態では、本発明の一態様の表示装置に用いることができる発光素子について説明する。
図20Aに示すように、発光素子は、一対の電極(電極672、電極688)の間に、EL層686を有する。EL層686は、層4420、発光層4411、及び層4430等の複数の層で構成することができる。層4420は、例えば電子注入性の高い物質を含む層(電子注入層)及び電子輸送性の高い物質を含む層(電子輸送層)等を有することができる。発光層4411は、例えば発光性の化合物を有する。層4430は、例えば正孔注入性の高い物質を含む層(正孔注入層)及び正孔輸送性の高い物質を含む層(正孔輸送層)を有することができる。
本実施の形態では、本発明の一態様の表示装置に用いることができる、発光素子、受光素子、及び受発光素子の詳細な構成について説明する。
本実施の形態では、上記の実施の形態で説明したOSトランジスタに用いることができる金属酸化物について説明する。
酸化物半導体の結晶構造としては、アモルファス(completely amorphousを含む)、CAAC(c−axis−aligned crystalline)、nc(nanocrystalline)、CAC(cloud−aligned composite)、単結晶(single crystal)、及び多結晶(polycrystal)等が挙げられる。
なお、酸化物半導体は、構造に着目した場合、上記とは異なる分類となる場合がある。例えば、酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、上述のCAAC−OS、及びnc−OSがある。また、非単結晶酸化物半導体には、多結晶酸化物半導体、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)、及び非晶質酸化物半導体等が含まれる。
CAAC−OSは、複数の結晶領域を有し、当該複数の結晶領域はc軸が特定の方向に配向している酸化物半導体である。なお、特定の方向とは、CAAC−OS膜の厚さ方向、CAAC−OS膜の被形成面の法線方向、又はCAAC−OS膜の表面の法線方向である。また、結晶領域とは、原子配列に周期性を有する領域である。なお、原子配列を格子配列とみなすと、結晶領域とは、格子配列の揃った領域でもある。さらに、CAAC−OSは、a−b面方向において複数の結晶領域が連結する領域を有し、当該領域は歪みを有する場合がある。なお、歪みとは、複数の結晶領域が連結する領域において、格子配列の揃った領域と、別の格子配列の揃った領域と、の間で格子配列の向きが変化している箇所を指す。つまり、CAAC−OSは、c軸配向し、a−b面方向には明らかな配向をしていない酸化物半導体である。
nc−OSは、微小な領域(例えば、1nm以上10nm以下の領域、特に1nm以上3nm以下の領域)において原子配列に周期性を有する。別言すると、nc−OSは、微小な結晶を有する。なお、当該微小な結晶の大きさは、例えば、1nm以上10nm以下、特に1nm以上3nm以下であることから、当該微小な結晶をナノ結晶ともいう。また、nc−OSは、異なるナノ結晶間で結晶方位に規則性が見られない。そのため、膜全体で配向性が見られない。従って、nc−OSは、分析方法によっては、a−like OS、又は非晶質酸化物半導体と区別が付かない場合がある。例えば、nc−OS膜に対し、XRD装置を用いて構造解析を行うと、θ/2θスキャンを用いたOut−of−plane XRD測定では、結晶性を示すピークが検出されない。また、nc−OS膜に対し、ナノ結晶よりも大きいプローブ径(例えば50nm以上)の電子線を用いる電子線回折(制限視野電子線回折ともいう。)を行うと、ハローパターンのような回折パターンが観測される。一方、nc−OS膜に対し、ナノ結晶の大きさと近いかナノ結晶より小さいプローブ径(例えば1nm以上30nm以下)の電子線を用いる電子線回折(ナノビーム電子線回折ともいう。)を行うと、ダイレクトスポットを中心とするリング状の領域内に複数のスポットが観測される電子線回折パターンが取得される場合がある。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。a−like OSは、鬆又は低密度領域を有する。即ち、a−like OSは、nc−OS及びCAAC−OSと比べて、結晶性が低い。また、a−like OSは、nc−OS及びCAAC−OSと比べて、膜中の水素濃度が高い。
次に、上述のCAC−OSの詳細について、説明を行う。なお、CAC−OSは材料構成に関する。
CAC−OSとは、例えば、金属酸化物を構成する元素が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、一つ又は複数の金属元素が偏在し、該金属元素を有する領域が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで混合した状態をモザイク状、又はパッチ状ともいう。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では、本発明の一態様の表示装置を有する電子機器について説明する。
Claims (11)
- 発光素子と、受光素子と、を有し、
前記発光素子は、第1の画素電極と、第1の機能層と、発光層と、共通層と、共通電極と、を有し、
前記受光素子は、第2の画素電極と、第2の機能層と、受光層と、前記共通層と、前記共通電極と、を有し、
前記第1の機能層は、正孔注入層又は電子注入層の一方を有し、
前記第2の機能層は、正孔輸送層又は電子輸送層の一方を有し、
前記共通層は、前記発光素子において、前記正孔注入層、又は前記電子注入層の他方としての機能を有する表示装置。 - 請求項1において、
前記第1の機能層と、前記第2の機能層と、は互いに分離される表示装置。 - 請求項1又は2において、
第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の画素電極と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の画素電極と電気的に接続され、
前記第1のトランジスタ、及び前記第2のトランジスタは、チャネル形成領域にシリコンを有する表示装置。 - 請求項1又は2において、
第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の画素電極と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の画素電極と電気的に接続され、
前記第1のトランジスタ、及び前記第2のトランジスタは、チャネル形成領域に金属酸化物を有する表示装置。 - 第1の画素電極、第2の画素電極、及び接続電極を形成する第1の工程と、
前記第1の画素電極上、及び前記第2の画素電極上に、発光膜を成膜する第2の工程と、
前記発光膜上、及び前記接続電極上に、第1の犠牲膜を形成する第3の工程と、
前記第1の犠牲膜、及び前記発光膜をエッチングして、前記第2の画素電極を露出させ、且つ、前記第1の画素電極上に発光層と、前記発光層上、及び前記接続電極上の第1の犠牲層と、を形成する第4の工程と、
前記発光層上、及び前記第2の画素電極上に、受光膜を成膜する第5の工程と、
前記受光膜上、及び前記接続電極上に、第2の犠牲膜を形成する第6の工程と、
前記第2の犠牲膜、及び前記受光膜をエッチングして、前記第2の画素電極上の受光層と、前記受光層上、及び前記接続電極上の第2の犠牲層と、を形成する第7の工程と、
前記第1の犠牲層、及び前記第2の犠牲層を除去する第8の工程と、
前記発光層上、及び前記受光層上に、共通層を形成する第9の工程と、
前記共通層、及び前記接続電極と接する領域を有するように、共通電極を形成する第10の工程と、を有する表示装置の作製方法。 - 請求項5において、
前記共通層は、前記第1の画素電極と、前記発光層と、前記共通層と、前記共通電極と、を有する発光素子において、正孔注入層又は電子注入層の一方としての機能を有する表示装置の作製方法。 - 請求項6において、
前記第1の工程と前記第2の工程の間に、前記第1の画素電極上、及び前記第2の画素電極上に第1の機能膜を成膜する第11の工程を有し、
前記第4の工程において、前記第1の機能膜をエッチングして、前記第1の画素電極上の第1の機能層を形成し、
前記第4の工程と前記第5の工程の間に、前記第1の犠牲層上、及び前記第2の画素電極上に第2の機能膜を成膜する第12の工程を有し、
前記第7の工程において、前記第2の機能膜をエッチングして、前記第2の画素電極上の第2の機能層を形成し、
前記第1の機能層は、前記正孔注入層又は前記電子注入層の他方を有し、
前記第2の機能層は、正孔輸送層又は電子輸送層の一方を有する表示装置の作製方法。 - 請求項5乃至7のいずれか一項において、
前記発光膜、前記受光膜、及び前記共通層は、遮蔽マスクを用いた蒸着法により形成する表示装置の作製方法。 - 請求項5乃至8のいずれか一項において、
前記第1の犠牲膜と前記第2の犠牲膜は、同一の金属膜、合金膜、金属酸化物膜、半導体膜、又は無機絶縁膜を含み、
前記第4の工程において、前記発光膜は、酸素を主成分に含まないエッチングガスを用いたドライエッチングによりエッチングされ、
前記第8の工程において、前記第1の犠牲層、及び前記第2の犠牲層は、水酸化テトラメチルアンモニウム水溶液、希フッ酸、シュウ酸、リン酸、酢酸、硝酸、又はこれらの混合液体を用いたウェットエッチングにより除去される表示装置の作製方法。 - 請求項9において、
前記第1の犠牲膜、及び前記第2の犠牲膜は、酸化アルミニウムを含む表示装置の作製方法。 - 請求項5乃至10のいずれか一において、
前記第10の工程より後に、前記共通電極上に保護層を形成する第14の工程を有する表示装置の作製方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022577807A JPWO2022162494A1 (ja) | 2021-01-28 | 2022-01-18 | |
US18/273,085 US20240090303A1 (en) | 2021-01-28 | 2022-01-18 | Display device and manufacturing method of display device |
KR1020237027909A KR20230137363A (ko) | 2021-01-28 | 2022-01-18 | 표시 장치 및 표시 장치의 제작 방법 |
CN202280010956.2A CN116806447A (zh) | 2021-01-28 | 2022-01-18 | 显示设备以及显示设备的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021011705 | 2021-01-28 | ||
JP2021-011705 | 2021-01-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022162494A1 true WO2022162494A1 (ja) | 2022-08-04 |
Family
ID=82654199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2022/050365 WO2022162494A1 (ja) | 2021-01-28 | 2022-01-18 | 表示装置、及び表示装置の作製方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240090303A1 (ja) |
JP (1) | JPWO2022162494A1 (ja) |
KR (1) | KR20230137363A (ja) |
CN (1) | CN116806447A (ja) |
WO (1) | WO2022162494A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4376580A1 (en) * | 2022-11-24 | 2024-05-29 | Samsung Electronics Co., Ltd. | Sensor embedded display panel and electronic device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332051A (ja) * | 2002-05-09 | 2003-11-21 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子の製造方法 |
JP2004055367A (ja) * | 2002-07-22 | 2004-02-19 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子形成用基板 |
WO2020053692A1 (ja) * | 2018-09-14 | 2020-03-19 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
US20200212138A1 (en) * | 2018-12-26 | 2020-07-02 | Samsung Display Co., Ltd. | Display device |
WO2020136495A1 (ja) * | 2018-12-28 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN112802799A (zh) * | 2021-01-14 | 2021-05-14 | 合肥维信诺科技有限公司 | 显示面板的制备方法、显示面板和显示装置 |
CN112993139A (zh) * | 2020-11-10 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 显示面板及其制作方法和显示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102079188B1 (ko) | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
-
2022
- 2022-01-18 US US18/273,085 patent/US20240090303A1/en active Pending
- 2022-01-18 CN CN202280010956.2A patent/CN116806447A/zh active Pending
- 2022-01-18 WO PCT/IB2022/050365 patent/WO2022162494A1/ja active Application Filing
- 2022-01-18 KR KR1020237027909A patent/KR20230137363A/ko unknown
- 2022-01-18 JP JP2022577807A patent/JPWO2022162494A1/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332051A (ja) * | 2002-05-09 | 2003-11-21 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子の製造方法 |
JP2004055367A (ja) * | 2002-07-22 | 2004-02-19 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子形成用基板 |
WO2020053692A1 (ja) * | 2018-09-14 | 2020-03-19 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
US20200212138A1 (en) * | 2018-12-26 | 2020-07-02 | Samsung Display Co., Ltd. | Display device |
WO2020136495A1 (ja) * | 2018-12-28 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN112993139A (zh) * | 2020-11-10 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 显示面板及其制作方法和显示装置 |
CN112802799A (zh) * | 2021-01-14 | 2021-05-14 | 合肥维信诺科技有限公司 | 显示面板的制备方法、显示面板和显示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4376580A1 (en) * | 2022-11-24 | 2024-05-29 | Samsung Electronics Co., Ltd. | Sensor embedded display panel and electronic device |
Also Published As
Publication number | Publication date |
---|---|
CN116806447A (zh) | 2023-09-26 |
KR20230137363A (ko) | 2023-10-04 |
US20240090303A1 (en) | 2024-03-14 |
JPWO2022162494A1 (ja) | 2022-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2022162494A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022248984A1 (ja) | 表示装置 | |
JP2022183125A (ja) | 表示装置および表示装置の作製方法 | |
CN116745835A (zh) | 显示装置、显示模块、电子设备及显示装置的制造方法 | |
WO2022229781A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022248974A1 (ja) | 表示装置 | |
WO2022162495A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022162493A1 (ja) | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 | |
US20240324392A1 (en) | Display Device And Method For Manufacturing Display Device | |
WO2022167882A1 (ja) | 表示装置、表示モジュール、及び電子機器 | |
WO2022248971A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2023281345A1 (ja) | 表示装置 | |
WO2022167892A1 (ja) | 表示装置の作製方法 | |
WO2023012571A1 (ja) | 表示装置 | |
WO2022248973A1 (ja) | 表示装置 | |
WO2023100022A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022189916A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022162492A1 (ja) | 表示装置 | |
WO2022238808A1 (ja) | 表示装置、及び表示装置の作製方法 | |
WO2022175781A1 (ja) | 表示装置、表示モジュール、及び電子機器 | |
WO2022172115A1 (ja) | 表示装置 | |
US20240164166A1 (en) | Display apparatus, display module, and electronic device | |
WO2022189882A1 (ja) | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 | |
WO2022185150A1 (ja) | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 | |
WO2022263969A1 (ja) | 表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22745450 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2022577807 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 18273085 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202280010956.2 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 20237027909 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020237027909 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 22745450 Country of ref document: EP Kind code of ref document: A1 |