WO2022162495A1 - 表示装置、及び表示装置の作製方法 - Google Patents
表示装置、及び表示装置の作製方法 Download PDFInfo
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- WO2022162495A1 WO2022162495A1 PCT/IB2022/050366 IB2022050366W WO2022162495A1 WO 2022162495 A1 WO2022162495 A1 WO 2022162495A1 IB 2022050366 W IB2022050366 W IB 2022050366W WO 2022162495 A1 WO2022162495 A1 WO 2022162495A1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Definitions
- One embodiment of the present invention relates to a display device.
- One embodiment of the present invention relates to a method for manufacturing a display device.
- one aspect of the present invention is not limited to the above technical field.
- Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input/output devices, and driving methods thereof. , or methods for producing them, can be mentioned as an example.
- a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.
- display devices have been used in various devices such as smartphones, tablet terminals, information terminal devices such as laptop PCs, television devices, and monitor devices.
- display devices that have various functions in addition to displaying images, such as a function as a touch sensor or a function of capturing fingerprints for authentication.
- a light-emitting device having a light-emitting element has been developed.
- a light-emitting element also referred to as an EL element or an EL device
- EL electroluminescence
- Patent Document 1 discloses a flexible light-emitting device to which an organic EL element (also referred to as an organic EL device) is applied.
- An object of one embodiment of the present invention is to provide a display device having a function of detecting an object in contact with or in proximity to a display portion, and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a display device having a function of performing authentication and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a display device with a high aperture ratio and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a small display device and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a highly reliable display device and a manufacturing method thereof.
- An object of one embodiment of the present invention is to provide a novel display device and a manufacturing method thereof.
- the present invention includes a light-emitting element and a light-receiving element.
- the light-emitting element includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a light-emitting layer over the first light-emitting layer. a second light-emitting layer on the intermediate layer; a common layer on the second light-emitting layer; and a common electrode on the common layer; It has a light-receiving layer on the second pixel electrode, a common layer on the light-receiving layer, and a common electrode on the common layer, and the common layer serves as either a hole injection layer or an electron injection layer in the light emitting element. and the common layer functions as either a hole-transporting layer or an electron-transporting layer in the light-receiving element.
- the first light-emitting layer and the second light-emitting layer may have the function of emitting light of the same color.
- the first transistor and the second transistor are included, one of the source and the drain of the first transistor is electrically connected to the first pixel electrode, and the second transistor may be electrically connected to the second pixel electrode, and the first transistor and the second transistor may have silicon or metal oxide in channel formation regions.
- one embodiment of the present invention is a first step of forming a first pixel electrode, a second pixel electrode, and a connection electrode, and forming a second pixel electrode over the first pixel electrode and the second pixel electrode.
- the first light-emitting film, the second light-emitting film, and the light-receiving film may be formed by vapor deposition using a shielding mask.
- the first sacrificial film and the second sacrificial film include the same metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film
- the first The light-emitting film and the second light-emitting film are etched by dry etching using an etching gas that does not contain oxygen as a main component
- the first sacrificial layer and the second sacrificial layer are It may be removed by wet etching using a tetramethylammonium hydroxide aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof.
- the first sacrificial film and the second sacrificial film may contain aluminum oxide.
- the above aspect may have a tenth step of forming a protective layer on the common electrode after the ninth step.
- a display device having a function of detecting an object in contact with or in proximity to a display portion and a manufacturing method thereof can be provided.
- a display device having a function of performing authentication and a manufacturing method thereof can be provided.
- a display device with a high aperture ratio and a manufacturing method thereof can be provided.
- a small display device and a manufacturing method thereof can be provided.
- a highly reliable display device and a manufacturing method thereof can be provided.
- a novel display device and a manufacturing method thereof can be provided.
- FIG. 1A to 1E are cross-sectional views showing configuration examples of a display device.
- FIG. 1F is a diagram showing an example of a captured image.
- 2A and 2B are cross-sectional views showing configuration examples of the display device.
- 3A and 3B are cross-sectional views showing configuration examples of the display device.
- FIG. 4 is a cross-sectional view showing a configuration example of a display device.
- 5A and 5B are cross-sectional views showing configuration examples of the display device.
- 6A to 6C are cross-sectional views showing configuration examples of the display device.
- 7A and 7B are top views showing configuration examples of the display device.
- 8A and 8B are top views showing configuration examples of the display device.
- FIG. 9A is a top view showing a configuration example of a display device.
- FIG. 9A is a top view showing a configuration example of a display device.
- FIG. 9B is a diagram showing the light receiving range of the light receiving element.
- FIG. 10 is a top view showing a configuration example of a display device.
- 11A to 11E are cross-sectional views showing configuration examples of display devices.
- 12A to 12D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 13A to 13C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 14A to 14D are cross-sectional views illustrating an example of a method for manufacturing a display device.
- 15A to 15C are cross-sectional views illustrating an example of a method for manufacturing a display device.
- FIG. 16 is a perspective view showing a configuration example of a display device.
- FIG. 17 is a cross-sectional view showing a configuration example of a display device.
- FIG. 18 is a cross-sectional view showing a configuration example of a display device.
- FIG. 19 is a cross-sectional view showing a configuration example of a display device.
- FIG. 20 is a cross-sectional view showing a configuration example of a display device.
- FIG. 21 is a cross-sectional view showing a configuration example of a display device.
- 22A and 22B are diagrams illustrating examples of electronic devices.
- 23A and 23B are diagrams illustrating examples of electronic devices.
- 24A to 24E are diagrams illustrating examples of electronic devices.
- film and the term “layer” can be interchanged with each other.
- conductive layer or “insulating layer” may be interchangeable with the terms “conductive film” or “insulating film.”
- an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer) or a laminate including a light-emitting layer. .
- a display panel which is one aspect of a display device, has a function of displaying (outputting) an image, for example, on a display surface. Therefore, the display panel is one aspect of the output device.
- the substrate of the display panel is attached with a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or an IC is sometimes called a display panel module, a display module, or simply a display panel.
- a connector such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package)
- an IC is sometimes called a display panel module, a display module, or simply a display panel.
- a display device of one embodiment of the present invention includes a display portion in which pixels are arranged in matrix.
- a pixel has a plurality of sub-pixels, and one light-emitting element (also referred to as a light-emitting device) is provided for each sub-pixel.
- a plurality of sub-pixels provided in the same pixel can have a function of emitting lights of different colors.
- Each light-emitting element has a pair of electrodes and a light-emitting layer therebetween.
- the light-emitting element is preferably an organic EL element (organic electroluminescence element).
- Two or more light-emitting elements that emit different colors have light-emitting layers each containing a different material.
- a full-color display device can be realized by including three types of light-emitting elements that emit red (R), green (G), and blue (B) light.
- a light-emitting layer is processed into a fine pattern without using a shadow mask such as a metal mask.
- the sub-pixels can be miniaturized and the aperture ratio of the pixels can be increased as compared with the case where the light-emitting layers are separately formed by using the shadow mask.
- the light-emitting layers can be separately formed, a display device with extremely vivid, high-contrast, and high-quality display can be realized.
- a pixel can be provided with a sub-pixel having a light-receiving element (also referred to as a light-receiving device) in addition to the sub-pixel having a light-emitting element.
- the display device of one embodiment of the present invention can prevent the pixel density from becoming small.
- the pixel density can be 400 ppi or greater, 1000 ppi or greater, 3000 ppi or greater, or 5000 ppi or greater.
- a light-receiving element included in the display device of one embodiment of the present invention functions as an optical sensor. Therefore, the display device of one embodiment of the present invention can display an image with a light-emitting element and detect an object that is in contact with or close to the display portion, for example, with a light-receiving element. For example, when a finger of a user of the display device is in contact with the display portion of the display device of one embodiment of the present invention, authentication can be performed based on the fingerprint of the finger.
- the light-receiving element in the display unit, there is no need to externally attach the sensor to the display device. Therefore, since the number of parts of the display device can be reduced, the size and weight of the display device can be reduced.
- the light-receiving element can detect light emitted by the light-emitting element, applied to an object, and reflected by the object. Therefore, for example, even in a dark place, it is possible to detect an object that is in contact with or close to the display unit, and to perform authentication such as fingerprint authentication.
- devices manufactured using metal masks or FMM are sometimes referred to as devices with MM (metal mask) structures.
- MM metal mask
- a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
- a light-emitting element capable of emitting white light is sometimes referred to as a white light-emitting element.
- a white light-emitting element can be combined with a colored layer (for example, a color filter) to realize a full-color display device.
- the light-emitting element can be roughly classified into a single structure and a tandem structure.
- a single-structure light-emitting element preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers.
- the light-emitting unit preferably includes one or more light-emitting layers.
- the emission color of the first light-emitting layer and the emission color of the second light-emitting layer it is possible to obtain a configuration in which the entire light-emitting element emits white light.
- a light-emitting element having three or more light-emitting layers are examples of the entire light-emitting element having three or more light-emitting layers.
- a tandem-structured light-emitting element preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers.
- each light-emitting unit preferably includes one or more light-emitting layers.
- a structure in which white light emission is obtained by combining light from the light emitting layers of a plurality of light emitting units may be employed. Note that the structure for obtaining white light emission is the same as the structure of the single structure.
- an intermediate layer such as a charge-generating layer is preferably provided between a plurality of light-emitting units.
- the white light emitting element when comparing the white light emitting element (single structure or tandem structure) and the light emitting element having the SBS structure, the light emitting element having the SBS structure can consume less power than the white light emitting element. Therefore, when it is desired to suppress the power consumption of the display device, it is preferable to use a light-emitting element having an SBS structure.
- the manufacturing process of the white light emitting element is simpler than that of the SBS structure light emitting element, so that the manufacturing cost can be reduced or the manufacturing yield can be increased.
- FIGS. 1A to 1E are cross-sectional views illustrating structural examples of a display device of one embodiment of the present invention.
- a display device 10A shown in FIG. 1A has a layer 53 having light receiving elements and a layer 57 having light emitting elements between substrates 51 and 59 .
- a display device 10B shown in FIG. 1B has a layer 55 having a transistor, a layer 53 having a light receiving element, and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.
- FIG. 1B A display device 10B shown in FIG. 1B has a layer 55 having a transistor, a layer 53 having a light receiving element, and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.
- the display device 10A and the display device 10B have a configuration in which red (R), green (G), and blue (B) lights are emitted from the layer 57 having light emitting elements.
- a display device of one embodiment of the present invention includes a plurality of pixels arranged in a matrix in a display portion.
- One pixel has one or more sub-pixels.
- One sub-pixel has one light-emitting element or one light-receiving element.
- a pixel can have four sub-pixels.
- one pixel can be configured to have a light-emitting element of three colors of R, G, and B and a light-receiving element, and yellow (Y), cyan (C), and magenta ( M) can be configured to have three color light-emitting elements and light-receiving elements.
- the pixel can have a structure having five sub-pixels.
- one pixel can be configured to have four-color light-emitting elements of R, G, B, and white (W) and a light-receiving element.
- W white
- a configuration including light emitting elements of four colors of R, G, B, and infrared (IR) and light receiving elements can be employed.
- the light receiving element may be provided in all the pixels, or may be provided in some of the pixels.
- one pixel may have a plurality of light receiving elements.
- a display device of one embodiment of the present invention may have a function of detecting an object such as a finger in contact with the display device.
- the finger 52 touching the display device 10B reflects the light emitted by the light emitting element in the layer 57 having the light emitting element, and the light receiving element in the layer 53 having the light receiving element reflects the light. Detect light.
- the light emitted by the light emitting element in the layer 57 is reflected by the finger 52 close to the display device 10B, and the light receiving element in the layer 53 detects the reflected light.
- the display device of one embodiment of the present invention can function as a touch sensor (also referred to as a direct touch sensor), or a near touch sensor (hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). It can have the function as
- the finger 52 can be detected when the finger 52 approaches the display device 10B even if the finger 52 does not touch the display device 10B.
- the display device 10B can detect the finger 52 when the distance between the display device 10B and the finger 52 is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
- the display device 10B can be operated without the finger 52 directly touching it, in other words, the display device 10B can be operated without contact (touchless).
- the display device of one embodiment of the present invention can have a function of detecting the fingerprint of the finger 52, for example.
- FIG. 1E schematically shows an enlarged view of the contact portion when the finger 52 is in contact with the substrate 59.
- FIG. 1E shows how layers 57 having light emitting elements and layers 53 having light receiving elements are alternately arranged.
- a fingerprint is formed on the finger 52 by concave portions and convex portions. Therefore, the convex portion of the fingerprint touches the substrate 59 as shown in FIG. 1E.
- Specularly reflected light is highly directional light whose incident angle and reflected angle are the same, and diffusely reflected light is light with low angular dependence of intensity and low directivity.
- the light reflected from the surface of the finger 52 is dominated by the diffuse reflection component of the specular reflection and the diffuse reflection.
- the light reflected from the interface between the substrate 59 and the atmosphere is predominantly a specular reflection component.
- the intensity of the light reflected by the contact surface or the non-contact surface between the finger 52 and the substrate 59 and incident on the layer 53 located directly below them is the sum of specularly reflected light and diffusely reflected light.
- the specularly reflected light (indicated by the solid line arrow) is dominant. indicated by dashed arrows) becomes dominant. Therefore, the intensity of light received by the light-receiving element of the layer 53 located directly below the recess is higher than the intensity of light received by the light-receiving element of the layer 53 located directly below the protrusion. Therefore, the fingerprint of the finger 52 can be imaged using the light receiving element.
- the arrangement interval of the light receiving elements of the layer 53 is set to be smaller than the distance between two protrusions of the fingerprint, preferably smaller than the distance between adjacent recesses and protrusions, so that a clear fingerprint image can be obtained. can be done. Since the distance between concave and convex portions of a human fingerprint is approximately 150 ⁇ m to 250 ⁇ m, for example, the array interval of light receiving elements is 400 ⁇ m or less, preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, and even more preferably 120 ⁇ m or less. More preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less. Although the arrangement interval is preferably as small as possible, it can be, for example, 1 ⁇ m or more, 10 ⁇ m or more, or 20 ⁇ m or more.
- FIG. 1F is an example of a fingerprint image captured by the display device of one embodiment of the present invention.
- the contour of the finger 52 is indicated by a dashed line in the region 65
- the contour of the contact portion 69 is indicated by a dashed line.
- a high-contrast fingerprint 67 can be imaged due to the difference in the amount of light incident on the light-receiving element.
- the light-receiving element can detect light emitted by the light-emitting element, applied to an object such as the finger 52, and reflected by the object. Therefore, even in a dark place, for example, an object that is in contact with or close to the display can be detected, and authentication such as fingerprint authentication can be performed.
- the light-receiving element in the display unit, it is no longer necessary to externally attach the sensor to the display device. Therefore, since the number of parts of the display device can be reduced, the size and weight of the display device can be reduced.
- FIG. 2A shows a schematic cross-sectional view of the display device 10 .
- the display device 10 has a light-emitting element 550R that emits red light, a light-emitting element 550G that emits green light, a light-emitting element 550B that emits blue light, and a light-receiving element 560.
- FIG. 550R shows a schematic cross-sectional view of the display device 10 .
- the display device 10 has a light-emitting element 550R that emits red light, a light-emitting element 550G that emits green light, a light-emitting element 550B that emits blue light, and a light-receiving element 560.
- the light-emitting element 550R has a structure in which two light-emitting units 512R (light-emitting unit 512R_1 and light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501R, electrode 502) via an intermediate layer 531R.
- the light-emitting element 550G has a structure in which two light-emitting units 512G (light-emitting unit 512G_1 and light-emitting unit 512G_2) are stacked between a pair of electrodes (electrode 501G, electrode 502) via an intermediate layer 531G. .
- the light emitting element 550B has a structure in which two light emitting units 512B (light emitting unit 512B_1 and light emitting unit 512B_2) are stacked between a pair of electrodes (electrode 501B, electrode 502) with an intermediate layer 531B interposed therebetween.
- the light receiving element 560 is provided with a light receiving unit 542 between a pair of electrodes (electrode 501PD, electrode 502).
- the term "display device 10" is simply used. That is, the configuration and the like of the display device 10 can be applied to both the display device 10A shown in FIG. 1A and the display device 10B shown in FIG. 1B. The same is true for other elements.
- the electrode 501 functions as a pixel electrode and is provided for each light emitting element 550 and each light receiving element 560 .
- the electrode 502 functions as a common electrode and is provided in common to the plurality of light emitting elements 550 and light receiving elements 560 .
- the light emitting unit 512R_1 includes layers 521, 522, 523R, 524, and the like.
- the light-emitting unit 512R_2 includes a layer 522, a light-emitting layer 523R, a layer 524, and the like.
- the light emitting element 550R has a layer 525R between the light emitting unit 512R_2 and the electrode 502, for example. Note that the layer 525R can also be considered part of the light emitting unit 512R_2.
- the layer 521 has, for example, a layer (hole injection layer) containing a highly hole-injecting substance.
- the layer 522 has, for example, a layer containing a substance with a high hole-transport property (hole-transport layer).
- the layer 524 has, for example, a layer containing a highly electron-transporting substance (electron-transporting layer).
- the layer 525 has, for example, a layer containing a highly electron-injecting substance (electron-injection layer).
- the layer 521 may have an electron injection layer
- the layer 522 may have an electron transport layer
- the layer 524 may have a hole transport layer
- the layer 525 may have a hole injection layer.
- the layer 522, the light emitting layer 523R, and the layer 524 may have the same configuration (material, film thickness, etc.) in the light emitting unit 512R_1 and the light emitting unit 512R_2, or may have different configurations.
- the present invention is not limited to this.
- the layer 521 has a function of both a hole-injection layer and a hole-transport layer, or when the layer 521 has a function of both an electron-injection layer and an electron-transport layer , the layer 522 may be omitted.
- the intermediate layer 531R has a function of injecting electrons into one of the light emitting unit 512R_1 and the light emitting unit 512R_2 and injecting holes into the other when a voltage is applied between the electrode 501 and the electrode 502. .
- the intermediate layer 531R can also be called a charge generation layer.
- the light-emitting unit 512R has been specified, but the same configuration can be applied to the light-emitting unit 512G and the light-emitting unit 512B.
- the light-emitting layer 523R included in the light-emitting element 550R includes a light-emitting substance that emits red light
- the light-emitting layer 523G included in the light-emitting element 550G includes a light-emitting substance that emits green light
- the light-emitting element 550B includes the light-emitting layer 523G.
- Layer 523B has a luminescent material that exhibits blue emission.
- the light emitting element 550G and the light emitting element 550B each have a configuration in which the light emitting layer 523R of the light emitting element 550R is replaced with a light emitting layer 523G and a light emitting layer 523B, and other configurations are the same as those of the light emitting element 550R. .
- the layers 521, 522, 524, and 525 may have the same configuration (material, film thickness, etc.) in the light emitting elements of each color, or may have different configurations.
- a configuration in which a plurality of light-emitting units are connected in series via an intermediate layer 531, such as the light-emitting element 550R, the light-emitting element 550G, and the light-emitting element 550B, is called a tandem structure in this specification and the like.
- a structure having one light-emitting unit between a pair of electrodes is called a single structure.
- the structure is referred to as a tandem structure, but the structure is not limited to this.
- the tandem structure may be referred to as a stack structure.
- a light-emitting element capable of emitting light with high luminance can be obtained by adopting a tandem structure.
- the tandem structure can reduce the current required to obtain the same luminance as compared with the single structure, so that the reliability of the display device can be improved.
- a structure in which a light-emitting layer is separately formed for each light-emitting element is sometimes called an SBS structure.
- the material and structure can be optimized for each light-emitting element, so the degree of freedom in selecting the material and structure increases, and it becomes easy to improve luminance and reliability.
- the display device 10 of one embodiment of the present invention has a tandem structure and an SBS structure. Therefore, it is possible to have both the merit of the tandem structure and the merit of the SBS structure.
- the display device 10 of one embodiment of the present invention may be referred to as a two-stage tandem structure because it has a structure in which two light-emitting units are arranged in series as illustrated in FIG. 2A. Further, in the two-stage tandem structure shown in FIG. 2A, the structure is such that the second light-emitting unit having the red light-emitting layer is stacked on the first light-emitting unit having the red light-emitting layer. Similarly, in the two-stage tandem structure shown in FIG.
- the structure is such that the second light-emitting unit having a green light-emitting layer is stacked on the first light-emitting unit having a green light-emitting layer, and the blue light-emitting layer A second light-emitting unit having a blue light-emitting layer is stacked on the first light-emitting unit having .
- a light-receiving unit 542 of the light-receiving element 560 has a layer 522, a light-receiving layer 543, a layer 524, and the like.
- the light receiving unit 542 can be configured without a hole injection layer and an electron injection layer.
- the layers 522 and 524 included in the light-receiving unit 542 may have the same configuration (material, film thickness, etc.) as the layers 522 and 524 included in the light-emitting unit 512, or may have different configurations.
- FIG. 2B is a modification of the display device 10 shown in FIG. 2A.
- the display device 10 shown in FIG. 2B is an example in which the layer 525 is commonly provided between the light emitting elements 550 and the light receiving elements 560 similarly to the electrodes 502 .
- layer 525 can be referred to as a common layer.
- the layer 525 functions as an electron injection layer for the light emitting element 550.
- the light receiving element 560 it functions as an electron transport layer. Therefore, when the display device 10 has the configuration shown in FIG. 2B, the light receiving unit 542 does not need to be provided with the layer 524 functioning as an electron transport layer.
- the display device 10 shown in FIG. 3A is an example in which three light emitting units are stacked.
- the light emitting element 550R has a light emitting unit 512R_3 laminated on the light emitting unit 512R_2 via an intermediate layer 531R.
- the light emitting unit 512R_3 has the same configuration as the light emitting unit 512R_2. The above is the same for the light-emitting unit 512G_3 included in the light-emitting element 550G and the light-emitting unit 512B_3 included in the light-emitting element 550B.
- FIG. 3B shows an example of stacking n light-emitting units (n is an integer of 2 or more).
- the luminance obtained from the light-emitting element with the same amount of current can be increased according to the number of stacked layers. Further, by increasing the number of stacked light-emitting units, the current required to obtain the same luminance can be reduced, so that the power consumption of the light-emitting element can be reduced according to the number of stacked layers.
- FIG. 4 is a modification of the display device 10 shown in FIG. 2A.
- the display device 10 shown in FIG. 4 is an example in which the light receiving element 560 has two light receiving units 542 (a light receiving unit 542_1 and a light receiving unit 542_2).
- the light receiving unit 542_1 and the light receiving unit 542_2 are laminated via the intermediate layer 531PD.
- FIG. 4 although the structure which laminated
- the electrodes 502 are provided along the side surfaces of the light-emitting unit 512, the intermediate layer 531, the light-receiving unit 542, and the like. shows an example of
- the intermediate layer 531 and the electrode 502 come into contact with each other, an electrical short may occur. Therefore, it is preferable to insulate the intermediate layer 531 and the electrode 502 .
- FIG. 5A shows an example in which an insulating layer 541 is provided to cover the electrode 501, the side surface of each light emitting unit 512, the side surface of the intermediate layer 531, and the side surface of the light receiving unit 542.
- the insulating layer 541 can be called a sidewall protective layer, a sidewall insulating film, or the like.
- the intermediate layer 531 and the electrode 502 can be electrically insulated.
- each light emitting unit 512, the side surface of the intermediate layer 531, and the side surface of the light receiving unit 542 are preferably perpendicular or substantially perpendicular to the formation surface.
- the angle formed by the surface to be formed and these side surfaces be 60 degrees or more and 90 degrees or less.
- FIG. 5B shows an example in which the layer 525 and the electrode 502 are provided along the side surface of the light emitting unit 512, the side surface of the intermediate layer 531, and the side surface of the light receiving unit 542. Furthermore, the side wall protective layer has a two-layer structure of an insulating layer 541 and an insulating layer 544 .
- FIG. 6A is a modification of FIG. 5B.
- 6B is an enlarged view of region 503 shown in FIG. 6A.
- 6A and 5B differ in the shape of the end of the insulating layer 544.
- the shape of the edge of the insulating layer 544 is different, and the layer 525 and the electrode 502 are formed along the shape of the insulating layer 544, so the shapes of the layer 525 and the electrode 502 are also different.
- 6A and 5B are different in thickness of the insulating layer 541 and the insulating layer 544.
- FIG. In FIG. 6A, the insulating layer 544 is thicker than the insulating layer 541 .
- the shape of the end of the insulating layer 544 is round as shown in FIG.
- the end portion of the insulating layer 544 is rounded as shown in FIG. Become.
- the coverage of the layer 525 and the electrode 502 is improved, which is preferable.
- the shape of the end portion may be easily rounded.
- the insulating layer 541 and the insulating layer 544 that function as side wall protective layers can prevent electrical shorts between the electrode 502 and the intermediate layer 531 .
- electrical shorting between the electrodes 501 and 502 can be prevented. This can prevent electrical short-circuiting at the four corners of the light-emitting element.
- An inorganic insulating film is preferably used for each of the insulating layers 541 and 544 .
- oxide or nitride films such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, or hafnium oxide can be used.
- yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, or the like may be used.
- the insulating layer 541 and the insulating layer 544 are formed by various film forming methods such as sputtering, vapor deposition, chemical vapor deposition (CVD), and atomic layer deposition (ALD). can be done.
- the ALD method causes little film formation damage to a layer to be formed
- the insulating layer 541 that is directly formed over the light-emitting unit and the intermediate layer 531 is preferably formed by the ALD method.
- an aluminum oxide film formed by an ALD method can be used for the insulating layer 541, and a silicon nitride film formed by a sputtering method can be used for the insulating layer 544.
- one or both of the insulating layer 541 and the insulating layer 544 have a function as a barrier insulating film against at least one of water and oxygen.
- one or both of the insulating layer 541 and the insulating layer 544 preferably have a function of suppressing diffusion of at least one of water and oxygen.
- one or both of the insulating layer 541 and the insulating layer 544 preferably have a function of capturing or fixing at least one of water and oxygen (also referred to as gettering).
- a barrier insulating film indicates an insulating film having barrier properties.
- barrier property refers to a function of suppressing diffusion of a corresponding substance (also referred to as low permeability).
- the corresponding substance has a function of capturing or fixing (also called gettering).
- Either one or both of the insulating layer 541 and the insulating layer 544 have the function of the barrier insulating film or the gettering function, so that impurities (typically water , or oxygen) can be suppressed. With such a structure, a highly reliable display device can be provided.
- the display device 10 may be configured without the insulating layer 541 and the insulating layer 544 functioning as sidewall protective layers.
- a layer 525 is provided on the side of each light emitting unit 512 , the side of the intermediate layer 531 and the side of the light receiving unit 542 .
- each light-emitting element can be red, green, blue, cyan, magenta, yellow, white, or the like depending on the material forming the light-emitting layer 523 or the like.
- the color purity can be further increased by providing the light-emitting element with a microcavity structure.
- the light-emitting layer contains two or more kinds of light-emitting substances.
- two or more kinds of light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
- a light-emitting element that emits white light as a whole can be obtained.
- the light-emitting layer preferably contains two or more light-emitting substances that emit light such as R (red), G (green), B (blue), Y (yellow), or O (orange).
- a light-emitting element has at least a light-emitting layer. Further, in the light-emitting element, layers other than the light-emitting layer include a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, an electron-blocking material, and a substance with a high electron-injection property.
- a layer containing a substance, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
- Either a low-molecular-weight compound or a high-molecular-weight compound can be used for the light-emitting element, and an inorganic compound may be included.
- Each of the layers constituting the light-emitting element can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
- the light-emitting element can be configured to have one or more layers selected from a hole injection layer, a hole transport layer, a hole block layer, an electron block layer, an electron transport layer, and an electron injection layer.
- the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
- highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
- the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
- a hole-transporting layer is a layer containing a hole-transporting material.
- the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
- hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other hole-transporting materials. High material is preferred.
- the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
- the electron-transporting layer is a layer containing an electron-transporting material.
- an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
- electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ electrons containing oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other nitrogen-containing heteroaromatic compounds
- a material having a high electron-transport property such as a deficient heteroaromatic compound can be used.
- the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
- Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
- a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
- the electron injection layer examples include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), and 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latotium (abbreviation: LiPPP), lithium oxide (LiO x ), or cesium carbonate, alkaline earth metals, or compounds thereof can be used.
- the electron injection layer may have a laminated structure of two or more layers. As the laminated structure, for example, lithium fluoride can be used for the first layer and ytterbium can be used for the second layer.
- a material having an electron transport property may be used as the electron injection layer.
- a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
- a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
- the lowest unoccupied molecular orbital (LUMO) of the organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less.
- CV cyclic voltammetry
- photoelectron spectroscopy optical absorption spectroscopy
- inverse photoelectron spectroscopy and the like are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
- BPhen 4,7-diphenyl-1,10-phenanthroline
- NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
- HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1, 3,5-triazine
- TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3
- a light-emitting layer is a layer containing a light-emitting substance.
- the emissive layer can have one or more emissive materials.
- As the light-emitting substance a substance emitting light of blue, purple, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as appropriate.
- a substance that emits near-infrared light can be used as the light-emitting substance.
- Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
- fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like. mentioned.
- Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
- organometallic complexes especially iridium complexes
- platinum complexes, rare earth metal complexes, etc. which serve as ligands, may be mentioned.
- the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
- One or both of a hole-transporting material and an electron-transporting material can be used as the one or more organic compounds.
- Bipolar materials or TADF materials may also be used as one or more organic compounds.
- the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
- ExTET Exciplex-Triplet Energy Transfer
- a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized at the same time.
- a material that can be applied to an electron injection layer such as lithium
- a material applicable to the hole injection layer can be preferably used.
- a layer containing a hole-transporting material and an acceptor material can be used for the intermediate layer.
- a layer containing an electron-transporting material and a donor material can be used for the intermediate layer.
- the light-emitting material of the light-emitting layer is not particularly limited.
- the light-emitting layer 523R included in the light-emitting unit 512R_1 includes a phosphorescent material
- the light-emitting layer 523R included in the light-emitting unit 512R_2 includes a phosphorescent material
- the light-emitting layer 523G included in the light-emitting unit 512G_1 includes
- the light-emitting layer 523G of the light-emitting unit 512G_2 contains a fluorescent material
- the light-emitting layer 523B of the light-emitting unit 512B_1 contains a fluorescent material
- the light-emitting layer 523B of the light-emitting unit 512B_2 contains A configuration including a fluorescent material may be used.
- the light-emitting layer 523R included in the light-emitting unit 512R_1 includes a phosphorescent material
- the light-emitting layer 523R included in the light-emitting unit 512R_2 includes a phosphorescent material
- the light-emitting layer 523G included in the light-emitting unit 512G_1 includes The light-emitting layer 523G of the light-emitting unit 512G_2 contains a phosphorescent material
- the light-emitting layer 523B of the light-emitting unit 512B_1 contains a fluorescent material
- the light-emitting layer 523B of the light-emitting unit 512B_2 contains A configuration including a fluorescent material may be used.
- the display device of one embodiment of the present invention has a structure in which all the light-emitting layers of the display device 10 illustrated in FIG. 2A are made of a fluorescent material, or a structure in which all the light-emitting layers of the display device 10 illustrated in FIG. 2A are made of a phosphorescent material. may be
- the display device of one embodiment of the present invention has a structure in which the light-emitting layer 523R included in the light-emitting unit 512R_1 is a phosphorescent material and the light-emitting layer 523R included in the light-emitting unit 512R_2 is a fluorescent material in the display device 10 illustrated in FIG.
- the light-emitting layer 523R of the light-emitting unit 512R_1 is made of a fluorescent material
- the light-emitting layer 523R of the light-emitting unit 512R_2 is made of a phosphorescent material.
- a configuration different from the light-emitting material used may be used.
- the light receiving layer 543 included in the light receiving element 560 contains a semiconductor.
- the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
- an organic semiconductor is used as the semiconductor included in the light-receiving layer 543 is shown.
- the use of an organic semiconductor is preferable because the light-emitting layer 523 and the light-receiving layer 543 can be formed by the same method (eg, vacuum deposition method) and a manufacturing apparatus can be shared.
- n-type semiconductor material included in the absorption layer 543 examples include electron-accepting organic semiconductor materials such as fullerene (for example, C60 or C70 ) and fullerene derivatives.
- Fullerenes have a soccer ball-like shape, which is energetically stable.
- Fullerene has both deep (low) HOMO and LUMO levels. Since fullerene has a deep LUMO level, it has an extremely high electron-accepting property (acceptor property).
- acceptor property Normally, like benzene, when the ⁇ -electron conjugation (resonance) spreads in the plane, the electron-donating property (donor property) increases. , the electron acceptability becomes higher.
- a high electron-accepting property is useful as a light-receiving element because charge separation occurs quickly and efficiently.
- Both C 60 and C 70 have broad absorption bands in the visible light region, and C 70 is particularly preferable because it has a larger ⁇ -electron conjugate system than C 60 and has a wide absorption band in the long wavelength region.
- [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), or 1' , 1′′,4′,4′′-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene -C60 (abbreviation: ICBA) and the like.
- PC70BM [6,6]-Phenyl-C71-butylic acid methyl ester
- PC60BM [6,6]-Phenyl-C61-butylic acid methyl ester
- ICBA 1,6]fullerene -C60
- Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, or quinone derivatives etc.
- Materials of the p-type semiconductor included in the absorption layer 543 include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), and tin. Electron-donating organic semiconductor materials such as phthalocyanine (SnPc) and quinacridone are included.
- Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
- materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives and the like.
- the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
- the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
- a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
- the absorption layer 543 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
- the absorption layer 543 may be formed by laminating an n-type semiconductor and a p-type semiconductor.
- FIG. 7A is a schematic top view showing a configuration example of the display device 10.
- the display device 10 has a plurality of light emitting elements 550R emitting red light, light emitting elements 550G emitting green light, light emitting elements 550B emitting blue light, and light receiving elements 560, respectively.
- the light emitting regions of the light emitting elements 550 are labeled with R, G, and B.
- the light-receiving region of each light-receiving element 560 is labeled with PD.
- the light-emitting elements 550R, the light-emitting elements 550G, the light-emitting elements 550B, and the light-receiving elements 560 are arranged in a matrix.
- FIG. 7A shows an example in which a light emitting element 550R, a light emitting element 550G, and a light emitting element 550B are arranged in the X direction, and a light receiving element 560 is arranged below them.
- FIG. 7A also shows, as an example, a configuration in which light emitting elements 550 that emit light of the same color are arranged in the Y direction that intersects with the X direction.
- a pixel 20 can be configured by a sub-pixel having a light-receiving element 560 .
- FIG. 7A shows the connection electrode 501C.
- the connection electrode 501C is provided outside the display section in which the light emitting elements 550 and the light receiving elements 560 are arranged.
- connection electrode 501C can be provided along the outer periphery of the display section. For example, it may be provided along one side of the outer periphery of the display section, or may be provided over two or more sides of the outer periphery of the display section. That is, when the top surface shape of the display section is rectangular, the top surface shape of the connection electrode 501C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), frame-shaped, or the like.
- FIG. 7B is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 7A.
- the display device 10 shown in FIG. 7B is different from the display device 10 shown in FIG. 7A in that it has light emitting elements 550IR that emit infrared light.
- the light emitting element 550IR can emit, for example, near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less).
- the light emitting element 550IR is arranged in the X direction, and the light receiving element 560 is arranged thereunder. Further, the light receiving element 560 has a function of detecting infrared light.
- FIG. 8A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 7B.
- the display device 10 shown in FIG. 8A differs from the display device 10 shown in FIG. 7B in that the light receiving elements 560 and the light emitting elements 550IR are alternately arranged in the X direction.
- the light emitting elements 550R, 550G, and 550B and the light emitting elements 550IR are arranged in different rows. Therefore, the widths (the lengths in the X direction) of the light emitting elements 550R, 550G, and 550B can be increased, so that the luminance of light emitted from the pixel 20 can be increased.
- FIG. 8B is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 8A.
- the display device 10 shown in FIG. 8B is different from the display device 10 shown in FIG. 8A in that the light-emitting elements 550 are arranged in the order of G, B, and R in the X direction instead of the order of R, G, and B.
- 8A in that the light receiving element 560 is provided under the light emitting element 550G and the light emitting element 550B, and the light emitting element 550IR is provided under the light emitting element 550R.
- the area occupied by the light receiving element 560 in the display device 10 shown in FIG. 8B is larger than the area occupied by the light receiving element 560 in the display device 10 shown in FIG. 8A. Therefore, the light detection sensitivity of the light receiving element 560 can be enhanced. Therefore, for example, when the display device 10 has a function as a touch sensor or a near-touch sensor, an object that touches or approaches the display device 10 can be detected with high accuracy. In particular, when the display device 10 has a function as a near-touch sensor, the light detection sensitivity of the light receiving element 560 greatly affects the accuracy of object detection.
- FIG. 9A is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 8B.
- the display device 10 shown in FIG. 9A differs from the display device 10 shown in FIG. 8B in that the light receiving element 560 is provided under the light emitting element 550G and the light emitting element 550IR is provided under the light emitting elements 550B and 550R. different from
- the area occupied by the light receiving element 560 in the display device 10 shown in FIG. 9A is smaller than the area occupied by the light receiving element 560 in the display device 10 shown in FIG. 8B.
- the light receiving range of each light receiving element 560 can be narrowed.
- overlapping of light receiving ranges between different light receiving elements 560, for example, between adjacent light receiving elements 560 can be reduced. Therefore, it is possible to prevent blurring of an image captured using the light receiving element 560 and failure to capture a clear image.
- FIG. 9B is a cross-sectional view showing changes in the light receiving range of the light receiving element 560 when the area occupied by the light receiving element 560, specifically the length in the X direction, is changed.
- the light receiving element 560 is shown on the lower surface side of the layer 71
- the light blocking layer 73 is shown on the upper surface side of the layer 71.
- substrate 59 is also shown on layer 71 .
- a light-receiving element having a length in the X direction approximately three times that of the light-receiving element 560 is referred to as a light-receiving element 560L.
- light incident on the light receiving element 560 is designated as light 75 and indicated by a solid line.
- Light 77 that does not enter the light receiving element 560 but does enter the light receiving element 560L is indicated by a broken line.
- the light receiving range of one light receiving element 560 is defined as a light receiving range 80
- the light receiving range of one light receiving element 560L is defined as a light receiving range 81 .
- the light receiving range 80 of the light receiving element 560 is narrower than the light receiving range 81 of the light receiving element 560L.
- the light receiving range per light receiving element becomes narrower, and the overlapping of light receiving ranges between different light receiving elements is reduced.
- FIG. 9B shows an example in which the light receiving ranges 80 do not overlap between the adjacent light receiving elements 560 on the surface of the substrate 59, but the light receiving ranges 81 partially overlap between the adjacent light receiving elements 560L.
- FIG. 10 is a schematic top view showing a configuration example of the display device 10, which is a modification of the display device 10 shown in FIG. 7A.
- the display device 10 shown in FIG. 10 is different from the display device 10 shown in FIG. 7A in that only some of the pixels 20 are provided with light receiving elements 560 .
- the driving frequency of the display device 10 can be increased. Therefore, for example, when the display device 10 has a function as a touch sensor or a near-touch sensor, it is possible to quickly detect the position of an object that contacts or approaches the display device 10 . Therefore, for example, the movement of an object that contacts or approaches the display device 10 can be detected at high speed and with high accuracy.
- 11A is a cross-sectional view corresponding to the dashed-dotted line A1-A2 in FIG. 7A
- FIG. 11B is a cross-sectional view corresponding to the dashed-dotted line B1-B2 in FIG. 7A
- 11C is a cross-sectional view corresponding to the dashed-dotted line C1-C2 in FIG. 7A
- FIG. 11D is a cross-sectional view corresponding to the dashed-dotted line D1-D2 in FIG. 7A
- FIG. 11E is a cross-sectional view corresponding to the dashed-dotted line B3-B4 in FIG. 8A. 11A to 11E show configuration examples corresponding to FIG. 2A.
- the light emitting element 550R, the light emitting element 550G, the light emitting element 550B, and the light receiving element 560 are provided on the substrate 101. Further, when the display device 10 has the light-emitting element 550IR, the light-emitting element 550IR is provided over the substrate 101 .
- FIG. 11A shows a cross-sectional configuration example of a light-emitting element 550R, a light-emitting element 550G, and a light-emitting element 550B. Also, FIG. 11B shows a cross-sectional configuration example of the light receiving element 560 .
- the light-emitting element 550R has the electrode 501R, the light-emitting unit 512R_1, the intermediate layer 531R, the light-emitting unit 512R_2, the layer 525R, and the electrode 502.
- the light-emitting element 550G has an electrode 501G, a light-emitting unit 512G_1, an intermediate layer 531G, a light-emitting unit 512G_2, a layer 525G, and an electrode 502.
- the light-emitting element 550B has an electrode 501B, a light-emitting unit 512B_1, an intermediate layer 531B, a light-emitting unit 512B_2, a layer 525B, and an electrode 502.
- the light receiving element 560 has an electrode 501 PD, a light receiving unit 542 and an electrode 502 .
- a gap is provided between the electrode 502 and the insulating layer 131 . This can prevent the electrode 502 from contacting the side surface of the light emitting unit 512 and the side surface of the light receiving unit 542 . As a result, a short circuit in the light emitting element 550 and a short circuit in the light receiving element 560 can be suppressed.
- the distance is 1 ⁇ m or less, preferably 500 nm or less, more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less, the gap is It can be formed suitably.
- An insulating layer 131 is provided to cover the end of the electrode 501R, the end of the electrode 501G, the end of the electrode 501B, and the end of the electrode 501PD.
- the ends of the insulating layer 131 are preferably tapered. Note that the insulating layer 131 may be omitted if unnecessary.
- the light-emitting unit 512R_1, the light-emitting unit 512G_1, the light-emitting unit 512B_1, and the light-receiving unit 542 each have a region in contact with the upper surface of the electrode 501 and a region in contact with the surface of the insulating layer 131. Also, the end of the light emitting unit 512R_1, the end of the light emitting unit 512G_1, the end of the light emitting unit 512B_1, and the end of the light receiving unit 542 are located on the insulating layer 131.
- a gap is provided between light-emitting elements 550 that emit light of different colors, for example, between two light-emitting units 512 .
- the light emitting unit 512R_1, the light emitting unit 512G_1, and the light emitting unit 512B_1 are preferably provided so as not to contact each other.
- the light emitting unit 512R_2, the light emitting unit 512G_2, and the light emitting unit 512B_2 are preferably provided so as not to contact each other. Accordingly, it is possible to preferably prevent current from flowing through the two adjacent light emitting units 512 and unintended light emission from occurring. Therefore, the contrast of the display device 10 can be increased, and thus the display quality of the display device 10 can be increased.
- a protective layer 125 is provided on the electrode 502 .
- the protective layer 125 has a function of preventing impurities such as water from diffusing into the light emitting element 550 and the light receiving element 560 from above.
- the protective layer 125 can have, for example, a single layer structure or a laminated structure including at least an inorganic insulating film.
- inorganic insulating films include oxide films and nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. be done.
- a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 125 .
- a silicon oxynitride film is a film containing more oxygen than nitrogen.
- a silicon oxynitride film is a film containing more nitrogen than oxygen.
- the protective layer 125 a laminated film of an inorganic insulating film and an organic insulating film can be used.
- a structure in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable.
- the organic insulating film functions as a planarizing film. As a result, the upper surface of the organic insulating film can be flattened, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier property can be enhanced.
- the upper surface of the protective layer 125 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 125, an uneven shape due to the structure below may be formed. This is preferable because it can reduce the impact.
- a structure for example, a color filter, an electrode of a touch sensor, or a lens array
- FIG. 11C shows a cross-sectional configuration example of the display device 10 in the Y direction, and specifically shows a cross-sectional configuration example of the light emitting element 550R and the light receiving element 560.
- FIG. 11D shows the connection portion 130 where the connection electrode 501C and the electrode 502 are electrically connected.
- electrode 502 is provided on connection electrode 501 ⁇ /b>C in contact with electrode 502
- protective layer 125 is provided to cover electrode 502 .
- an insulating layer 131 is provided to cover the end of the connection electrode 501C.
- FIG. 11E shows a cross-sectional configuration example of the light-emitting element 550IR in addition to the cross-sectional configuration example of the light-receiving element 560.
- FIG. Light-emitting element 550 IR has electrode 501 IR, light-emitting unit 512 IR_ 1 , intermediate layer 531 IR, light-emitting unit 512 IR_ 2 , layer 525 IR, and electrode 502 .
- the light-emitting unit 512IR_1 and the light-emitting unit 512IR_2 of the light-emitting element 550IR include a light-emitting organic compound that emits light having intensity in at least the infrared wavelength range.
- the light-emitting unit 512IR_1 and the light-emitting unit 512IR_2 include a light-emitting organic compound that emits light having an intensity in the near-infrared wavelength range.
- the light receiving unit 542 included in the light receiving element 560 includes an organic compound having detection sensitivity in the wavelength range of infrared light, for example, near infrared light.
- FIGS. 7A and 11A to 11D are schematic cross-sectional views in each step of a method for manufacturing a display device illustrated below.
- 12A to 15C show a section corresponding to the dashed-dotted line A1-A2, a section corresponding to the dashed-dotted line B1-B2, and a section corresponding to the dashed-dotted line D1-D2 in FIG. 7A.
- the thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device are formed by sputtering, CVD, vacuum deposition, pulsed laser deposition (PLD), ALD, or the like.
- the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, or the like.
- PECVD plasma enhanced CVD
- thermal CVD thermal CVD
- MOCVD metal organic CVD
- thin films that make up the display device can be formed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, It can be formed by a method such as curtain coating or knife coating.
- the thin film when processing the thin film that constitutes the display device, for example, a photolithography method can be used.
- the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
- a photolithography method there are typically the following two methods.
- One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask.
- the other is a method of forming a thin film having photosensitivity and then exposing and developing the thin film to process the thin film into a desired shape.
- the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
- ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
- extreme ultraviolet (EUV: Extreme Ultra-violet) light, X-rays, or the like may be used.
- An electron beam can also be used instead of the light used for exposure.
- the use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
- a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
- a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
- the substrate 101 is prepared.
- a substrate having heat resistance enough to withstand at least heat treatment performed later can be used.
- an insulating substrate is used as the substrate 101
- a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
- a semiconductor substrate such as a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium or the like, or an SOI substrate made of silicon, silicon carbide, or the like can be used.
- an electrode 501R, an electrode 501G, an electrode 501B, an electrode 501PD, and a connection electrode 501C are formed on the substrate 101.
- a conductive film is formed, a resist mask is formed by a photolithography method, and unnecessary portions of the conductive film are removed by etching. After that, by removing the resist mask, the electrode 501R, the electrode 501G, and the electrode 501B can be formed.
- a material for example, silver or aluminum
- a material that has as high a reflectance as possible over the entire wavelength range of visible light.
- an insulating layer 131 is formed to cover the ends of the electrodes 501R, 501G, 501B, and 501PD (FIG. 12A).
- an organic insulating film or an inorganic insulating film can be used as the insulating layer 131.
- the insulating layer 131 preferably has a tapered end in order to improve the step coverage of a film to be formed later.
- an organic insulating film it is preferable to use a photosensitive material because the shape of the end portion can be easily controlled depending on the exposure and development conditions.
- an inorganic insulating film may be used as the insulating layer 131 .
- the display device 10 can be a high-definition display device.
- a layer 512Rf_1 that will later become the light emitting unit 512R_1 is formed.
- a film to be the layer 521, a film to be the layer 522, a light-emitting film to be the light-emitting layer 523R, and a film to be the layer 524 are formed in this order.
- an intermediate film 531Rf, which later becomes the intermediate layer 531R, is formed on the layer 512Rf_1.
- a layer 512Rf_2 that will later become the light emitting unit 512R_2 is formed on the intermediate film 531Rf. Specifically, a film that will later become the layer 522, a light-emitting film that will later become the light-emitting layer 523R, and a film that will later become the layer 524 are formed. After that, a film 525Rf that will later become the layer 525R is formed on the layer 512Rf_2.
- the film of the layer 512Rf_1, the intermediate film 531Rf, the film of the layer 512Rf_2, and the film 525Rf can be formed by, for example, vapor deposition, sputtering, or inkjet. Note that the method is not limited to this, and the film forming method described above can be used as appropriate.
- the layer 512Rf_1, the intermediate film 531Rf, the layer 512Rf_2, and the film 525Rf are preferably formed so as not to be provided over the connection electrode 501C.
- the film included in the layer 512Rf_1, the intermediate film 531Rf, the film included in the layer 512Rf_2, and the film 525Rf are formed by vapor deposition or sputtering
- the film included in the layer 512Rf_1, the intermediate film 531Rf, and the layer 512Rf_2 are formed on the connection electrode 501C.
- the film 525Rf are preferably formed using a shielding mask.
- a sacrificial film 141a is formed on the film 525Rf. Also, the sacrificial film 141a can be provided in contact with the upper surface of the connection electrode 501C.
- the sacrificial film 141a a film having high etching resistance to the film included in the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1, that is, a film having a high etching selectivity can be used.
- the sacrificial film 141a can be a film having a high etching selectivity with respect to a protective film such as a protective film 143a to be described later.
- a film that can be removed by a wet etching method that causes less damage to the films included in the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 can be used.
- the sacrificial film 141a for example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.
- the sacrificial film 141a can be formed by various film formation methods such as a sputtering method, a vapor deposition method, a CVD method, or an ALD method.
- the sacrificial film 141a for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or the metal materials can be used.
- metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or the metal materials can be used.
- a low melting point material such as aluminum or silver.
- a metal oxide such as indium gallium zinc oxide (In--Ga--Zn oxide, also referred to as IGZO) can be used.
- indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn -Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or the like can be used.
- indium tin oxide containing silicon or the like can be used.
- element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , or one or more selected from magnesium).
- an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide can be used.
- the sacrificial film 141a it is preferable to use a material that can be dissolved in a chemically stable solvent at least for the film 525Rf.
- a material that dissolves in water or alcohol can be suitably used for the sacrificial film 141a.
- the solvent can be removed at a low temperature in a short time by performing heat treatment in a reduced-pressure atmosphere, so that thermal damage to the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 can be reduced. It is possible and preferable.
- a wet film formation method that can be used to form the sacrificial film 141a includes spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or the like. There are knife courts, etc.
- an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.
- PVA polyvinyl alcohol
- polyvinyl butyral polyvinylpyrrolidone
- polyethylene glycol polyglycerin
- pullulan polyethylene glycol
- pullulan polyglycerin
- pullulan water-soluble cellulose
- alcohol-soluble polyamide resin water-soluble polyamide resin
- a protective film 143a is formed on the sacrificial film 141a (FIG. 12B).
- the protective film 143a is a film used as a hard mask when etching the sacrificial film 141a later. Further, the sacrificial film 141a is exposed when the protective film 143a is processed later. Therefore, the sacrificial film 141a and the protective film 143a are selected from a combination of films having a high etching selectivity. Therefore, a film that can be used for the protective film 143a can be selected according to the etching conditions for the sacrificial film 141a and the etching conditions for the protective film 143a.
- a gas containing fluorine also referred to as a fluorine-based gas
- An alloy containing molybdenum and niobium, an alloy containing molybdenum and tungsten, or the like can be used for the protective film 143a.
- a film that can provide a high etching selectivity (that is, can slow down the etching rate) in dry etching using a fluorine-based gas there is, for example, a metal oxide film such as IGZO or ITO. can be used for the sacrificial film 141a.
- the protective film 143a is not limited to this, and can be selected from various materials according to the etching conditions for the sacrificial film 141a and the etching conditions for the protective film 143a. For example, it can be selected from films that can be used for the sacrificial film 141a.
- a nitride film for example, can be used as the protective film 143a.
- nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can also be used.
- an oxide film can be used as the protective film 143a.
- an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used.
- a resist mask 145a is formed on the protective film 143a at a position overlapping with the electrode 501R and a position overlapping with the connection electrode 501C (FIG. 12C).
- the resist mask 145a can use a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.
- the resist mask 145a is formed on the sacrificial film 141a without forming the protective film 143a, if a defect such as a pinhole exists in the sacrificial film 141a, the solvent of the resist material dissolves the film 525Rf, for example. There is a risk of Using the protective film 143a can prevent such a problem from occurring.
- the resist mask 145a may be formed directly on the sacrificial film 141a without using the protective film 143a.
- a portion of the protective film 143a not covered with the resist mask 145a is removed by etching to form a protective layer 149a.
- the protective layer 149a is also formed on the connection electrode 501C at the same time.
- etching the protective film 143a it is preferable to use etching conditions with a high selectivity so that the sacrificial film 141a is not removed by the etching.
- Etching of the protective film 143a can be performed by wet etching or dry etching. By using dry etching, reduction of the pattern of the protective film 143a can be suppressed.
- the removal of the resist mask 145a can be performed by wet etching or dry etching.
- the resist mask 145a is preferably removed by dry etching (also referred to as plasma ashing) using an oxygen gas as an etching gas.
- the removal of the resist mask 145a is performed with the sacrificial film 141a provided on the film 525Rf, so the effect on the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 is suppressed.
- the electrical characteristics may be adversely affected, so this is suitable for etching using an oxygen gas such as plasma ashing.
- a portion of the sacrificial film 141a not covered with the protective layer 149a is removed by etching to form a sacrificial layer 147a (FIG. 13A).
- a sacrificial layer 147a is also formed on the connection electrode 501C at the same time.
- Etching of the sacrificial film 141a can be performed by wet etching or dry etching, but it is preferable to use a dry etching method because pattern shrinkage can be suppressed.
- the protective layer 149a is removed by etching, and portions of the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 that are not covered with the sacrificial layer 147a are removed by etching to remove the layer 525R, the light emitting unit 512R_2, and the intermediate layer 512R_2.
- Form layer 531R and light emitting unit 512R_1 (FIG. 13B).
- the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 are preferably etched by dry etching using an etching gas that does not contain oxygen as its main component. Accordingly, deterioration of the film 525Rf, the layer 512Rf_2, the intermediate film 531Rf, and the layer 512Rf_1 can be suppressed, and a highly reliable display device can be realized.
- Etching gases containing no oxygen as a main component include, for example, CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , H 2 , or noble gases. Helium, for example, can be used as the noble gas.
- a mixed gas of the above gas and a diluent gas that does not contain oxygen can be used as an etching gas.
- an intermediate film 531Gf that will later become the intermediate layer 531G and a light-emitting unit 512G_2.
- a layer 512Gf_2 that will become a layer 512Gf_2 and a film 525Gf that will later become a layer 525G are formed in this order. At this time, it is preferable not to provide the layer 512Gf_1, the intermediate film 531Gf, the layer 512Gf_2, and the film 525Gf over the connection electrode 501C.
- the method of forming the film of the layer 512Gf_1, the intermediate film 531Gf, the film of the layer 512Gf_2, and the film 525Gf are described in the film formation of the film of the layer 512Rf_1, the intermediate film 531Rf, the film of the layer 512Rf_2, and the film 525Rf. The description of the method and the like can be used.
- a sacrificial film 141b is formed on the film 525Gf.
- the sacrificial film 141b can be formed by a method similar to that of the sacrificial film 141a. In particular, it is preferable to use the same material as the sacrificial film 141a for the sacrificial film 141b.
- a sacrificial film 141b is formed on the connection electrode 501C to cover the sacrificial layer 147a.
- a protective film 143b is formed on the sacrificial film 141b.
- the protective film 143b can be formed by the same method as the protective film 143a. In particular, it is preferable to use the same material as the protective film 143a for the protective film 143b.
- a resist mask 145b is formed on the protective film 143b in a region overlapping with the electrode 501G and a region overlapping with the connection electrode 501C (FIG. 13C).
- the resist mask 145b can be formed by a method similar to that of the resist mask 145a.
- a portion of the protective film 143b that is not covered with the resist mask 145b is removed by etching to form a protective layer 149b.
- the protective layer 149b is also formed on the connection electrode 501C at the same time.
- the description of the protective film 143a can be used.
- the resist mask 145b is removed (FIG. 14A).
- the description of the resist mask 145a can be used.
- a portion of the sacrificial film 141b not covered with the protective layer 149b is removed by etching to form a sacrificial layer 147b.
- a sacrificial layer 147b is also formed on the connection electrode 501C at the same time.
- a sacrificial layer 147a and a sacrificial layer 147b are laminated on the connection electrode 501C.
- the above description of the sacrificial film 141a can be used.
- the protective layer 149b is removed by etching, and portions of the film 525Gf, the layer 512Gf_2, the intermediate film 531Gf, and the layer 512Gf_1 that are not covered with the sacrificial layer 147b are removed by etching, and the layer 525G, the light emitting unit 512G_2, and the intermediate layer 525G are removed.
- Layer 531G and light emitting unit 512G_1 are formed (FIG. 14B).
- the description of the film 525Rf, the layer 512Gf_2, the intermediate film 531Gf, the layer 512Gf_1, and the protective layer 149b can be used.
- the layer 525R, the light-emitting unit 512R_2, the intermediate layer 531R, and the light-emitting unit 512R_1 are protected by the sacrificial layer 147a, they are damaged during the etching process of the film 525Gf, the layer 512Gf_2, the intermediate film 531Gf, and the layer 512Gf_1. can be prevented.
- the light-emitting unit 512R_1, the intermediate layer 531R, the light-emitting unit 512R_2, and the layer 525R and the light-emitting unit 512G_1, the intermediate layer 531G, the light-emitting unit 512G_2, and the layer 525G can be separately manufactured with high positional accuracy.
- a light-emitting unit 512B_1, an intermediate layer 531B, a light-emitting unit 512B_2, a layer 525B, and a sacrificial layer 147c can be formed by steps similar to those described above (FIG. 14C).
- a sacrificial layer 147a, a sacrificial layer 147b, and a sacrificial layer 147c are stacked on the connection electrode 501C.
- the light-receiving unit 542 and the sacrificial layer 147d are formed (FIG. 14D).
- a sacrificial layer 147a, a sacrificial layer 147b, a sacrificial layer 147c, and a sacrificial layer 147d are laminated on the connection electrode 501C.
- the light-receiving unit 542 and the sacrificial layer 147d are formed.
- a light emitting unit 512IR_1, an intermediate layer 531IR, a light emitting unit 512IR_2, a layer 525IR, and a sacrificial layer are formed by steps similar to those described above. In this case, five sacrificial layers are laminated on the connection electrode 501C.
- sacrificial layer 147a, sacrificial layer 147b, sacrificial layer 147c, and sacrificial layer 147d are removed to expose the top surface of layer 525R, the top surface of layer 525G, the top surface of layer 525B, and the top surface of light receiving unit 542 (FIG. 15A).
- the upper surface of the connection electrode 501C is also exposed at the same time.
- the sacrificial layer 147a, the sacrificial layer 147b, the sacrificial layer 147c, and the sacrificial layer 147d can be removed by wet etching or dry etching. At this time, it is preferable to use a method that does not damage the light-emitting unit 512, the intermediate layer 531, the layer 525, and the light-receiving unit 542 as much as possible. In particular, it is preferable to use a wet etching method.
- TMAH tetramethylammonium hydroxide
- sacrificial layer 147a it is preferable to remove the sacrificial layer 147a, the sacrificial layer 147b, the sacrificial layer 147c, and the sacrificial layer 147d by dissolving them in a solvent such as water or alcohol.
- a solvent such as water or alcohol.
- various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol capable of dissolving the sacrificial layers 147a, 147b, 147c, and 147d. can.
- drying treatment is performed in order to remove water contained inside the light-emitting unit 512, the light-receiving unit 542, and the like, and water adsorbed to the surface.
- heat treatment is preferably performed in an inert gas atmosphere or a reduced pressure atmosphere.
- the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 120° C.
- a reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
- the light emitting unit 512R, the light emitting unit 512G, the light emitting unit 512B, the light receiving unit 542, etc. can be made separately.
- electrodes 502 are formed on the layer 525R, the layer 525G, the layer 525B, the light receiving unit 542, and the connection electrode 501C (FIG. 15B). As mentioned above, an air gap can be formed between the electrode 502 and the insulating layer 131 .
- the electrode 502 can be formed by a film forming method such as vapor deposition or sputtering. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be stacked. Electrode 502 is preferably formed using a shielding mask.
- the electrode 502 is electrically connected to the connection electrode 501C outside the display section.
- a protective layer 125 is formed on the electrode 502 (FIG. 15C).
- a sputtering method, a PECVD method, or an ALD method is preferably used for forming the inorganic insulating film used for the protective layer 125 .
- the ALD method is preferable because it has excellent step coverage and hardly causes defects such as pinholes.
- the display device 10 can be manufactured.
- the light-emitting elements 550 can be manufactured separately without using a shadow mask such as a metal mask. Accordingly, the sub-pixels can be miniaturized and the aperture ratio of the pixels can be increased as compared with the case where the light-emitting elements 550 are separately formed using the shadow mask. In addition, since the light-emitting units 512 can be separately manufactured, a display device with extremely vivid, high-contrast, and high-quality display can be realized.
- a pixel can be provided with a sub-pixel having a light-receiving element 560, and a pixel can be provided with a sub-pixel having a light-emitting element 550IR that emits infrared light.
- the display device of one embodiment of the present invention can prevent the pixel density from becoming small even in the case where a sub-pixel that does not contribute to display is provided in a pixel.
- the pixel density can be 400 ppi or greater, 1000 ppi or greater, 3000 ppi or greater, or 5000 ppi or greater.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- FIG. 16 is a perspective view showing a configuration example of the display device 100. As shown in FIG. The display device 100 has a structure in which a substrate 151 and a substrate 152 are bonded together. In FIG. 16, the substrate 152 is indicated by dashed lines.
- the display device 100 has a display section 162, a circuit 164, wiring 165, and the like. Also, FIG. 16 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100 . Therefore, the configuration shown in FIG. 16 can also be called a display module having a display device, an IC, and an FPC.
- the circuit 164 can be, for example, a gate driver.
- circuit 164 can be supplied with signals and power through line 165 .
- the signal and power can be input to the wiring 165 via the FPC 172 from the outside of the display device 10, for example.
- the signal and power can be generated by IC 173 and output to wiring 165 .
- FIG. 16 shows an example in which the IC 173 is provided on the substrate 151 by the COG (Chip On Glass) method, a TCP (Tape Carrier Package) method, a COF (Chip On Film) method, or the like may be used.
- COG Chip On Glass
- TCP Transmission Carrier Package
- COF Chip On Film
- FIG. 17 shows part of the area including the FPC 172, part of the area including the circuit 164, part of the area including the display section 162, and part of the area including the edge of the display device 100 shown in FIG. It is a figure which shows an example of a cross section. Note that the display device 100 shown in FIG. 17 is referred to as a display device 100A.
- the display device 100A has a transistor 201, a transistor 141, a transistor 142, a light emitting element 550, a light receiving element 560, and the like between the substrate 151 and the substrate 152.
- the substrate 152 and the insulating layer 214 are bonded via an adhesive layer 242 .
- a solid sealing structure, a hollow sealing structure, or the like can be applied for sealing the light emitting element 550 and the light receiving element 560.
- a space 143 surrounded by the substrate 152, the adhesive layer 242, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, or the like) and has a hollow sealing structure.
- the adhesive layer 242 may be provided so as to overlap with the light emitting element 550 .
- a region surrounded by the substrate 152 , the adhesive layer 242 , and the insulating layer 214 may be filled with a resin different from the adhesive layer 242 .
- the electrode 501 included in the light-emitting element 550 is electrically connected to the conductive layer 222b included in the transistor 141 through an opening provided in the insulating layer 214.
- the transistor 142 has a function of controlling driving of the light emitting element 550 .
- the electrode 501PD included in the light receiving element 560 is electrically connected to the conductive layer 222b included in the transistor 142 through an opening provided in the insulating layer 214.
- the light emitted by the light emitting element 550 is emitted to the substrate 152 side.
- a light shielding layer 148 is provided on the surface of the substrate 152 on the substrate 151 side.
- the light shielding layer 148 has openings at positions overlapping with the light receiving element 560 and positions overlapping with the light emitting element 550 .
- a filter 146 for cutting ultraviolet light is provided at a position overlapping the light receiving element 560 . Note that a configuration without the filter 146 is also possible.
- the transistors 201 , 141 , and 142 are all formed over the substrate 151 . These transistors can be made with the same material and the same process.
- An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided on the substrate 151 in this order.
- Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
- Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
- An insulating layer 215 is provided over the transistor.
- An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
- a material in which impurities such as water or hydrogen are difficult to diffuse for at least one insulating layer covering the transistor.
- inorganic insulating films are preferably used.
- the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
- a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film may be used.
- two or more of the insulating films described above may be laminated and used.
- An organic insulating film is preferably used for the insulating layer 214 that functions as a planarizing layer.
- materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
- the organic insulating film preferably has openings near the ends of the display device 100A. Thereby, it is possible to suppress diffusion of impurities from the end portion of the display device 100A through the organic insulating film.
- the organic insulating film may be formed so that the edges of the organic insulating film are positioned inside the edges of the display device 100A so that the organic insulating film is not exposed at the edges of the display device 100A.
- An opening is formed in the insulating layer 214 in a region 228 shown in FIG. As a result, even when an organic insulating film is used for the insulating layer 214 , diffusion of impurities from the outside into the display section 162 through the insulating layer 214 can be suppressed. Therefore, the reliability of the display device 100A can be improved.
- the transistor 201, the transistor 141, and the transistor 142 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as sources and drains, a semiconductor layer 231, and a gate insulating layer. It has an insulating layer 213 functioning as a gate and a conductive layer 223 functioning as a gate.
- the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
- the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
- the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
- the structure of the transistor included in the display device of this embodiment There is no particular limitation on the structure of the transistor included in the display device of this embodiment.
- a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
- a top-gate transistor structure or a bottom-gate transistor structure may be used.
- gates may be provided above and below a semiconductor layer in which a channel is formed.
- a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 , 141 , and 142 .
- a transistor may be driven by connecting two gates and applying the same signal to them.
- one of the two gates may be supplied with a potential for controlling the threshold voltage of the transistor and the other may be supplied with a potential for driving.
- crystallinity of a semiconductor material used for a transistor there is no particular limitation on the crystallinity of a semiconductor material used for a transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having a crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystal region in part) can be used. semiconductor) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration of transistor characteristics can be suppressed.
- a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
- the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
- the metal oxide preferably contains at least indium or zinc as described above. In particular, it preferably contains indium and zinc.
- aluminum, gallium, yttrium, tin, or the like is preferably contained.
- one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
- the transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures.
- the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
- the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
- a connecting portion 204 is provided in a region on the substrate 151 where the substrate 152 does not overlap.
- the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 244 .
- a conductive layer 166 obtained by processing the same conductive film as the electrode 501 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 244 .
- optical members can be arranged outside the substrate 152 .
- optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, and light collecting films.
- an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, or a shock absorbing layer, etc. are arranged on the outside of the substrate 152 .
- Glass, quartz, ceramics, sapphire, resin, or the like can be used for the substrates 151 and 152 .
- various curable adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, or an anaerobic adhesive can be used.
- these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
- a material with low moisture permeability such as epoxy resin is preferable.
- a two-liquid mixed type resin may be used.
- an adhesive sheet may be used.
- connection layer 244 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
- ACF anisotropic conductive film
- ACP anisotropic conductive paste
- materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer structure or a laminated structure.
- conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-containing zinc oxide can be used, or graphene can be used.
- metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing these metal materials can be used.
- a nitride of the metal material for example, titanium nitride
- it is preferably thin enough to have translucency.
- a stacked film of any of the above materials can be used as the conductive layer.
- a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.
- These can also be used for various wirings and conductive layers such as electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) included in display elements.
- Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
- FIG. 18 is a cross-sectional view showing a configuration example of a display device 100B, which is a modification of the display device 100A.
- the display device 100B differs from the display device 100A in that it has a substrate 153, an adhesive layer 155, and an insulating layer 212 instead of the substrate 151, and a substrate 154, an adhesive layer 156, and an insulating layer 158 instead of the substrate 152. different from
- a substrate 153 and an insulating layer 212 are bonded together by an adhesive layer 155. Also, the substrate 154 and the insulating layer 158 are bonded together by an adhesive layer 156 .
- a second manufacturing substrate provided with a filter 146 and the like is attached with an adhesive layer 242 .
- a substrate 153 is attached using an adhesive layer 155 to the surface exposed by peeling the first fabrication substrate.
- each component formed over the first manufacturing substrate is transferred to the substrate 153 .
- a substrate 154 is attached using an adhesive layer 156 to the surface exposed by peeling the second formation substrate.
- each component formed over the second manufacturing substrate is transferred to the substrate 154 .
- each of the substrates 153 and 154 has flexibility. This allows the display device 100B to have flexibility. That is, the display device 100B can be used as a flexible display.
- the inorganic insulating films that can be used for the insulating layers 211, 213, and 215 can be used for the insulating layers 212 and 158, respectively.
- FIG. 19 is a cross-sectional view showing a configuration example of the display device 100C.
- the display device 100C includes a substrate 301, a light emitting element 550, a light receiving element 560, a capacitor 240, and a transistor 310.
- the substrate 301 corresponds to the substrate 151 in FIG. 16, for example.
- a transistor 310 is a transistor having a channel formation region in the substrate 301 .
- the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
- Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
- the conductive layer 311 functions as a gate electrode.
- An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
- the low resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain.
- the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
- a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
- An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .
- the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
- the conductive layer 241 functions as one electrode of the capacitor 240
- the conductive layer 245 functions as the other electrode of the capacitor 240
- the insulating layer 243 functions as the dielectric of the capacitor 240 .
- the conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254 .
- the conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 embedded in the insulating layer 261 .
- An insulating layer 243 is provided over the conductive layer 241 .
- the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
- An insulating layer 255 is provided to cover the capacitor 240 , and a light emitting element 550 , a light receiving element 560 and the like are provided on the insulating layer 255 .
- a protective layer 125 is provided over the light-emitting element 550 and the light-receiving element 560 , and the substrate 420 is attached to the upper surface of the protective layer 125 with a resin layer 419 .
- the substrate 420 corresponds to the substrate 152 in FIG. 16, for example.
- the electrode 501 of the light-emitting element 550 and the electrode 501PD of the light-receiving element 560 are embedded in the insulating layer 255 and the plug 256 embedded in the insulating layer 243, the conductive layer 241 embedded in the insulating layer 254, and the insulating layer 261. It is electrically connected to one of the source and drain of the transistor 310 by a plug 271 .
- FIG. 20 is a cross-sectional view showing a configuration example of the display device 100D.
- the display device 100D mainly differs from the display device 100C in that the transistor configuration is different. Note that the description of the same parts as those of the display device 100C may be omitted.
- the transistor 320 is a transistor in which a metal oxide is applied to a semiconductor layer in which a channel is formed (hereinafter also referred to as an OS transistor).
- the transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.
- the substrate 331 corresponds to the substrate 151 in FIG. 16, for example.
- An insulating layer 332 is provided on the substrate 331 .
- the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
- a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
- a conductive layer 327 is provided over the insulating layer 332 , and an insulating layer 326 is provided to cover the conductive layer 327 .
- the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
- An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
- the upper surface of the insulating layer 326 is preferably planarized.
- the semiconductor layer 321 is provided on the insulating layer 326 .
- the semiconductor layer 321 preferably has a metal oxide film having semiconductor properties.
- a pair of conductive layers 325 are provided on and in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.
- An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325, the side surface of the semiconductor layer 321, and the like, and the insulating layer 264 is provided over the insulating layer 328.
- the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
- an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
- An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
- the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
- the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
- the upper surface of the conductive layer 324, the upper surface of the insulating layer 323, and the upper surface of the insulating layer 264 are planarized so that their heights are approximately the same, and the insulating layers 329 and 265 are provided to cover them.
- the insulating layers 264 and 265 function as interlayer insulating layers.
- the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
- an insulating film similar to the insulating layers 328 and 332 can be used.
- a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 , 264 and 328 .
- the plug 274 includes a conductive layer 274a that covers the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
- the configuration from the insulating layer 254 to the substrate 420 in the display device 100D is similar to that of the display device 100C.
- FIG. 21 is a cross-sectional view showing a configuration example of the display device 100E.
- the display device 100E has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked. It should be noted that descriptions of portions similar to those of the display device 100C or the display device 100D may be omitted.
- An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
- An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
- the conductive layers 251 and 252 each function as wirings.
- An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
- An insulating layer 265 is provided to cover the transistor 320 , and the capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
- the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
- a pixel circuit not only a pixel circuit but also a driver circuit, for example, can be formed directly under the light-emitting element, so that the size of the display device can be reduced compared to the case where the driver circuit is provided around the display portion. becomes possible.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc.
- aluminum, gallium, yttrium, tin, or the like is preferably contained.
- one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
- the metal oxide can be formed by sputtering, CVD such as MOCVD, or ALD.
- Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (polycrystal) and the like.
- the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
- XRD X-ray diffraction
- it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
- GIXD Gram-Incidence XRD
- the GIXD method is also called a thin film method or a Seemann-Bohlin method.
- the shape of the peak of the XRD spectrum is almost bilaterally symmetrical.
- the peak shape of the XRD spectrum is left-right asymmetric.
- the asymmetric shape of the peaks in the XRD spectra clearly indicates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
- the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nano beam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
- a diffraction pattern also referred to as a nano beam electron diffraction pattern
- NBED nano beam electron diffraction
- a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state.
- a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is neither crystalline nor amorphous, but in an intermediate state and cannot be concluded to be in an amorphous state.
- oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
- CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
- a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
- CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
- the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
- each of the plurality of crystal regions is composed of one or more minute crystals (crystals having a maximum diameter of less than 10 nm).
- the maximum diameter of the crystalline region is less than 10 nm.
- the size of the crystal region may be about several tens of nanometers.
- CAAC-OS contains indium (In) and oxygen.
- a tendency to have a layered crystal structure also referred to as a layered structure in which a layer (hereinafter referred to as an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter referred to as a (M, Zn) layer) are stacked.
- the (M, Zn) layer may contain indium.
- the In layer contains the element M.
- the In layer may contain Zn.
- the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
- a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
- a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
- the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit cell is not always a regular hexagon and may be a non-regular hexagon. Moreover, the distortion may have a lattice arrangement of pentagons, heptagons, or the like. Note that in CAAC-OS, no clear crystal grain boundary can be observed even near the strain. That is, it can be seen that the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, or the bond distance between atoms changes due to the substitution of metal atoms. It is considered to be for
- a crystal structure in which clear grain boundaries are confirmed is called a polycrystal.
- a crystal grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-state current of a transistor, a decrease in field-effect mobility, or the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
- a structure containing Zn is preferable for forming a CAAC-OS.
- In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
- CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
- a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
- CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
- nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
- the nc-OS has minute crystals.
- the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
- nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
- an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
- an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
- an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
- an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
- an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
- An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
- An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
- CAC-OS relates to material composition.
- CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
- one or more metal elements are unevenly distributed in the metal oxide, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
- the mixed state is also called a mosaic shape or a patch shape.
- CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
- the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In--Ga--Zn oxide are denoted by [In], [Ga], and [Zn], respectively.
- the first region is a region where [In] is larger than [In] in the composition of the CAC-OS.
- the second region is a region in which [Ga] is larger than [Ga] in the CAC-OS composition.
- the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
- the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
- the first region is a region whose main components are indium oxide, indium zinc oxide, and the like.
- the second region is a region containing gallium oxide, gallium zinc oxide, and the like as main components. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
- a clear boundary between the first region and the second region may not be observed.
- the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
- a CAC-OS can be formed, for example, by a sputtering method under the condition that the substrate is not intentionally heated.
- a sputtering method one or more selected from inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film formation gas. good.
- inert gas typically argon
- oxygen gas oxygen gas
- nitrogen gas nitrogen gas
- a region containing In as a main component is obtained by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
- EDX energy dispersive X-ray spectroscopy
- the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
- the second region is a region with higher insulation than the first region.
- the leakage current can be suppressed by distributing the second region in the metal oxide.
- CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act in a complementary manner to provide a switching function (turning ON/OFF). functions) can be given to the CAC-OS.
- a part of the material has a conductive function
- a part of the material has an insulating function
- the whole material has a semiconductor function.
- CAC-OS is most suitable for various semiconductor devices including display devices.
- Oxide semiconductors have a variety of structures, each with different characteristics.
- An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
- an oxide semiconductor with low carrier concentration is preferably used for a transistor.
- the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
- the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
- a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
- an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
- the trap level density may also be low.
- the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
- Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.
- the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
- the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
- the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
- the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
- oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
- part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
- the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
- the display device of one embodiment of the present invention can be provided in various electronic devices.
- electronic devices with relatively large screens such as televisions, desktop or notebook computers, tablet computers, monitors for computers, digital signage, large game machines such as pachinko machines, and digital cameras , a digital video camera, a digital photo frame, a portable game machine, a personal digital assistant, a sound player, or the like can be provided with the display device of one embodiment of the present invention.
- FIGS. 22A, 22B, 23A, and 23B An example of a wearable device that can be worn on the head will be described with reference to FIGS. 22A, 22B, 23A, and 23B.
- These wearable devices have one or both of a function of displaying AR (Augmented Reality) content and a function of displaying VR (Virtual Reality) content.
- these wearable devices may have the function of displaying SR (Substitutional Reality) or MR (Mixed Reality) content.
- SR Substitutional Reality
- MR Mated Reality
- the electronic device has a function of displaying content such as AR, VR, SR, or MR, it is possible to enhance the sense of immersion for the user of the electronic device.
- Electronic device 700A shown in FIG. 22A and electronic device 700B shown in FIG. It has a control section (not shown), a sensor section 725 , a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
- the sensor unit 725 can be provided in the housing 721, for example.
- the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
- the electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.
- the electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front as an imaging unit. Further, each of the electronic devices 700A and 700B includes an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756. You can also
- the communication unit has a wireless communication device, and can supply video signals, for example, with the wireless communication device.
- a connector capable of connecting a cable to which the video signal and the power supply potential are supplied may be provided.
- the electronic device 700A and the electronic device 700B are provided with batteries, and can be charged wirelessly and/or wiredly.
- the sensor unit 725 has a function of detecting that the outer surface of the housing 721 is touched, for example.
- the sensor unit 725 can detect a user's tap operation, slide operation, or the like, and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and it is possible to perform fast-forward or fast-reverse processing by a slide operation. Further, by providing the sensor unit 725 in each of the two housings 721, the range of operations can be expanded.
- the display device of one embodiment of the present invention can be applied to the sensor portion 725 .
- the sensor portion 725 can be provided with a light receiving element that can be included in the display device of one embodiment of the present invention.
- a light receiving element can be manufactured using the method for manufacturing the display device of one embodiment of the present invention.
- the sensor unit 725 can be a touch sensor having a light receiving element with a high aperture ratio. Therefore, the sensor unit 725 can be a touch sensor with high detection sensitivity.
- Electronic device 800A shown in FIG. 23A and electronic device 800B shown in FIG. It has a pair of imaging units 825 and a pair of lenses 832 .
- the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
- the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
- Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
- a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
- the electronic device 800A and the electronic device 800B each have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. Further, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
- the wearing part 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.
- the shape is illustrated as a temple of spectacles (also referred to as a joint, a temple, or the like), but the shape is not limited to this.
- the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
- the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 .
- the imaging portion 825 can be provided with a light receiving element that can be included in the display device of one embodiment of the present invention.
- a light-receiving element can be manufactured using the manufacturing method of the display device of one embodiment of the present invention. Accordingly, since a light receiving element with a high aperture ratio can be provided in the imaging section 825, the imaging section 825 can perform imaging with high sensitivity. Therefore, the imaging unit 825 can perform imaging with a high S/N ratio even under low illuminance, for example.
- a distance measuring sensor capable of measuring the distance of an object
- the imaging unit 825 is one aspect of the detection unit.
- the detection unit for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging) can be used.
- LIDAR Light Detection and Ranging
- the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
- a vibration mechanism that functions as bone conduction earphones.
- one or more of the display portion 820, the housing 821, and the mounting portion 823 can be provided with the vibration mechanism.
- the electronic device 800A and the electronic device 800B may each have an input terminal.
- a video signal from a video output device and a cable for supplying power for charging a battery provided in the electronic device can be connected to the input terminal.
- the electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750.
- Earphone 750 has a communication unit (not shown) and has a wireless communication function.
- the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
- information eg, audio data
- electronic device 700A shown in FIG. 22A has a function of transmitting information to earphone 750 by a wireless communication function.
- electronic device 800A shown in FIG. 23A has a function of transmitting information to earphone 750 by a wireless communication function.
- the electronic device may have an earphone section.
- Electronic device 700B shown in FIG. 22B has earphone section 727 .
- the earphone section 727 and the control section can be configured to be wired to each other.
- a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
- the electronic device 800B shown in FIG. 23B has an earphone section 827.
- the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
- a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
- the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
- the electronic device may have an audio output terminal to which earphones, headphones, or the like can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
- the voice input mechanism for example, a sound collecting device such as a microphone can be used.
- the electronic device may function as a so-called headset.
- the electronic device of one embodiment of the present invention includes both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). preferred.
- the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.
- FIG. 24A is a diagram showing an example of the oxygen concentration meter 900.
- the oximeter 900 has a housing 911 and a light emitting/receiving device 912 .
- a housing 911 is provided with a cavity, and a light emitting/receiving device 912 is provided so as to be in contact with the wall surface of the cavity.
- the light receiving and emitting device 912 has a function as a light source that emits light and a function as a sensor that detects light. For example, when an object is placed in the hollow portion of the housing 911, the light receiving/emitting device 912 can detect light emitted by the light emitting/receiving device 912, applied to the object, and reflected from the object.
- the color of the blood changes depending on the oxygen saturation of the hemoglobin contained in the blood (the ratio of hemoglobin bound to oxygen). Therefore, when a finger is put into the hollow portion of the housing 911, the intensity of light reflected by the finger and detected by the light emitting/receiving device 912 changes. For example, the intensity of red light detected by the light receiving and emitting device 912 changes.
- the oximeter 900 can measure the oxygen saturation by detecting the intensity of the reflected light with the light emitting/receiving device 912 .
- the oximeter 900 can be, for example, a pulse oximeter.
- the display device of one embodiment of the present invention can be applied to the light receiving and emitting device 912 .
- the light emitting/receiving device 912 has at least a light emitting element that emits red light (R).
- the light receiving and emitting device 912 preferably has a light emitting element that emits infrared light (IR).
- the red light (R) reflectance of hemoglobin bound to oxygen differs significantly from the red light (R) reflectance of hemoglobin not bound to oxygen.
- the difference between the infrared light (IR) reflectance of hemoglobin bound with oxygen and the infrared light (IR) reflectance of hemoglobin not bound with oxygen is small.
- the light receiving and emitting device 912 has not only a light emitting element that emits red light (R) but also a light emitting element that emits infrared light (IR), so that the oximeter 900 can measure the oxygen saturation with high accuracy. be able to.
- the light emitting and receiving device 912 preferably has flexibility. Since the light emitting/receiving device 912 has flexibility, the light emitting/receiving device 912 can have a curved shape. As a result, for example, the finger can be irradiated with light with good uniformity, and oxygen saturation can be measured with high accuracy, for example.
- FIG. 24B is a diagram showing an example of a portable data terminal 9100.
- FIG. A portable data terminal 9100 includes a display portion 9110, a housing 9101, keys 9102, speakers 9103, and the like.
- Portable data terminal 9100 may be, for example, a tablet.
- a key such as the key 9102 can be a key for switching on/off of power, for example. That is, a key such as key 9102 can be, for example, a power switch.
- the keys such as the key 9102 can be operation keys used for causing the electronic device to perform desired operations, for example.
- the display unit 9110 can display information 9104, operation buttons (also referred to as operation icons or simply icons) 9105, and the like.
- the display portion 9110 can function as a touch sensor or a near-touch sensor.
- FIG. 24C is a diagram showing an example of the digital signage 9200.
- the digital signage 9200 can be configured such that a display portion 9210 is attached to a pillar 9201 .
- the display portion 9210 can function as a touch sensor or a near-touch sensor.
- FIG. 24D is a diagram showing an example of a mobile information terminal 9300.
- FIG. A mobile information terminal 9300 includes a display portion 9310, a housing 9301, a speaker 9302, a camera 9303, keys 9304, connection terminals 9305, 9306, and the like.
- the mobile information terminal 9300 can be a smart phone, for example.
- the connection terminal 9305 can be, for example, microUSB, lighting, Type-C, or the like.
- the connection terminal 9306 can be an earphone jack, for example.
- an operation button 9307 can be displayed on the display unit 9310.
- Information 9308 can be displayed on the display portion 9310 .
- An example of the information 9308 is a display that notifies an incoming e-mail, SNS (social networking service), or a phone call, the title of the e-mail or SNS, the name of the sender of the e-mail or SNS, the date and time, the battery remaining amount, radio wave strength, etc.
- the display portion 9310 can function as a touch sensor or a near-touch sensor.
- FIG. 24E is a diagram showing an example of a wristwatch-type mobile information terminal 9400.
- FIG. A portable information terminal 9400 includes a display portion 9410, a housing 9401, a wristband 9402, keys 9403, connection terminals 9404, and the like.
- the connection terminal 9404 can be, for example, microUSB, lighting, or Type-C, like the connection terminals 9305 and the like.
- the display unit 9410 can display information 9406, operation buttons 9407, and the like.
- FIG. 24E shows an example in which time is displayed on the display unit 9410 as information 9406 .
- the display portion 9410 can function as a touch sensor or a near-touch sensor.
- This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
Abstract
Description
図2A及び図2Bは、表示装置の構成例を示す断面図である。
図3A及び図3Bは、表示装置の構成例を示す断面図である。
図4は、表示装置の構成例を示す断面図である。
図5A及び図5Bは、表示装置の構成例を示す断面図である。
図6A乃至図6Cは、表示装置の構成例を示す断面図である。
図7A及び図7Bは、表示装置の構成例を示す上面図である。
図8A及び図8Bは、表示装置の構成例を示す上面図である。
図9Aは、表示装置の構成例を示す上面図である。図9Bは、受光素子の受光範囲を示す図である。
図10は、表示装置の構成例を示す上面図である。
図11A乃至図11Eは、表示装置の構成例を示す断面図である。
図12A乃至図12Dは、表示装置の作製方法例を示す断面図である。
図13A乃至図13Cは、表示装置の作製方法例を示す断面図である。
図14A乃至図14Dは、表示装置の作製方法例を示す断面図である。
図15A乃至図15Cは、表示装置の作製方法例を示す断面図である。
図16は、表示装置の構成例を示す斜視図である。
図17は、表示装置の構成例を示す断面図である。
図18は、表示装置の構成例を示す断面図である。
図19は、表示装置の構成例を示す断面図である。
図20は、表示装置の構成例を示す断面図である。
図21は、表示装置の構成例を示す断面図である。
図22A及び図22Bは、電子機器の一例を示す図である。
図23A及び図23Bは、電子機器の一例を示す図である。
図24A乃至図24Eは、電子機器の一例を示す図である。
本実施の形態では、本発明の一態様の表示装置の構成例、及び表示装置の作製方法の一例について説明する。
図2Aに、表示装置10の断面概略図を示す。表示装置10は、赤色の光を発する発光素子550R、緑色の光を発する発光素子550G、青色の光を発する発光素子550B、及び受光素子560を有する。
各発光素子の発光色は、発光層523等を構成する材料によって、赤、緑、青、シアン、マゼンタ、黄、又は白等とすることができる。また、発光素子にマイクロキャビティ構造を付与することにより、色純度をさらに高めることができる。
受光素子560が有する受光層543は、半導体を含む。当該半導体としては、シリコン等の無機半導体、及び、有機化合物を含む有機半導体が挙げられる。本実施の形態では、受光層543が有する半導体として、有機半導体を用いる例を示す。有機半導体を用いることで、発光層523と、受光層543と、を同じ方法(例えば、真空蒸着法)で形成することができ、製造装置を共通化できるため好ましい。
図7Aは、表示装置10の構成例を示す上面概略図である。表示装置10は、赤色光を発する発光素子550R、緑色光を発する発光素子550G、青色光を発する発光素子550B、及び受光素子560をそれぞれ複数有する。図7Aでは、各発光素子550の区別を簡単にするため、各発光素子550の発光領域内にR、G、Bの符号を付している。また、各受光素子560の受光領域内にPDの符号を付している。
図11Aは、図7A中の一点鎖線A1−A2に対応する断面図であり、図11Bは、図7A中の一点鎖線B1−B2に対応する断面図である。また、図11Cは、図7A中の一点鎖線C1−C2に対応する断面図であり、図11Dは、図7A中の一点鎖線D1−D2に対応する断面図である。さらに、図11Eは、図8A中の一点鎖線B3−B4に対応する断面図である。図11A乃至図11Eには、図2Aに対応する構成例を示している。
以下では、本発明の一態様の表示装置の作製方法の一例について、図面を参照して説明する。ここでは、図7A、及び図11A乃至図11Dに示す表示装置10の作製方法を例に挙げて説明する。図12A乃至図15Cは、以下で例示する表示装置の作製方法の、各工程における断面概略図である。図12A乃至図15Cでは、図7A中の一点鎖線A1−A2に対応する断面、一点鎖線B1−B2に対応する断面、及び一点鎖線D1−D2に対応する断面を示している。
本実施の形態では、本発明の一態様の表示装置の構成例について説明する。
図16は、表示装置100の構成例を示す斜視図である。表示装置100は、基板151と基板152が貼り合わされた構成を有する。図16では、基板152を破線で示している。
図18は、表示装置100Bの構成例を示す断面図であり、表示装置100Aの変形例である。表示装置100Bは、基板151の代わりに基板153、接着層155、及び絶縁層212を有する点、及び基板152の代わりに基板154、接着層156、及び絶縁層158を有する点が、表示装置100Aと異なる。
図19は、表示装置100Cの構成例を示す断面図である。表示装置100Cは、基板301、発光素子550、受光素子560、容量240、及びトランジスタ310を有する。基板301は、例えば図16における基板151に相当する。
図20は、表示装置100Dの構成例を示す断面図である。表示装置100Dは、トランジスタの構成が異なる点で、表示装置100Cと主に相違する。なお、表示装置100Cと同様の部分については説明を省略することがある。
図21は、表示装置100Eの構成例を示す断面図である。表示装置100Eは、基板301にチャネルが形成されるトランジスタ310と、チャネルが形成される半導体層に金属酸化物を含むトランジスタ320とが積層された構成を有する。なお、表示装置100C、又は表示装置100Dと同様の部分については説明を省略することがある。
本実施の形態では、上記の実施の形態で説明したOSトランジスタに用いることができる金属酸化物について説明する。
酸化物半導体の結晶構造としては、アモルファス(completely amorphousを含む)、CAAC(c−axis−aligned crystalline)、nc(nanocrystalline)、CAC(cloud−aligned composite)、単結晶(single crystal)、及び多結晶(polycrystal)等が挙げられる。
なお、酸化物半導体は、構造に着目した場合、上記とは異なる分類となる場合がある。例えば、酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、上述のCAAC−OS、及びnc−OSがある。また、非単結晶酸化物半導体には、多結晶酸化物半導体、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)、及び非晶質酸化物半導体等が含まれる。
CAAC−OSは、複数の結晶領域を有し、当該複数の結晶領域はc軸が特定の方向に配向している酸化物半導体である。なお、特定の方向とは、CAAC−OS膜の厚さ方向、CAAC−OS膜の被形成面の法線方向、又はCAAC−OS膜の表面の法線方向である。また、結晶領域とは、原子配列に周期性を有する領域である。なお、原子配列を格子配列とみなすと、結晶領域とは、格子配列の揃った領域でもある。さらに、CAAC−OSは、a−b面方向において複数の結晶領域が連結する領域を有し、当該領域は歪みを有する場合がある。なお、歪みとは、複数の結晶領域が連結する領域において、格子配列の揃った領域と、別の格子配列の揃った領域と、の間で格子配列の向きが変化している箇所を指す。つまり、CAAC−OSは、c軸配向し、a−b面方向には明らかな配向をしていない酸化物半導体である。
nc−OSは、微小な領域(例えば、1nm以上10nm以下の領域、特に1nm以上3nm以下の領域)において原子配列に周期性を有する。別言すると、nc−OSは、微小な結晶を有する。なお、当該微小な結晶の大きさは、例えば、1nm以上10nm以下、特に1nm以上3nm以下であることから、当該微小な結晶をナノ結晶ともいう。また、nc−OSは、異なるナノ結晶間で結晶方位に規則性が見られない。そのため、膜全体で配向性が見られない。従って、nc−OSは、分析方法によっては、a−like OS、又は非晶質酸化物半導体と区別が付かない場合がある。例えば、nc−OS膜に対し、XRD装置を用いて構造解析を行うと、θ/2θスキャンを用いたOut−of−plane XRD測定では、結晶性を示すピークが検出されない。また、nc−OS膜に対し、ナノ結晶よりも大きいプローブ径(例えば50nm以上)の電子線を用いる電子線回折(制限視野電子線回折ともいう。)を行うと、ハローパターンのような回折パターンが観測される。一方、nc−OS膜に対し、ナノ結晶の大きさと近いかナノ結晶より小さいプローブ径(例えば1nm以上30nm以下)の電子線を用いる電子線回折(ナノビーム電子線回折ともいう。)を行うと、ダイレクトスポットを中心とするリング状の領域内に複数のスポットが観測される電子線回折パターンが取得される場合がある。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。a−like OSは、鬆又は低密度領域を有する。即ち、a−like OSは、nc−OS及びCAAC−OSと比べて、結晶性が低い。また、a−like OSは、nc−OS及びCAAC−OSと比べて、膜中の水素濃度が高い。
次に、上述のCAC−OSの詳細について、説明を行う。なお、CAC−OSは材料構成に関する。
CAC−OSとは、例えば、金属酸化物を構成する元素が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、一つ又は複数の金属元素が偏在し、該金属元素を有する領域が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、又はその近傍のサイズで混合した状態をモザイク状、又はパッチ状ともいう。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では、本発明の一態様の表示装置を有する電子機器について説明する。
Claims (9)
- 発光素子と、受光素子と、を有し、
前記発光素子は、第1の画素電極と、前記第1の画素電極上の第1の発光層と、前記第1の発光層上の中間層と、前記中間層上の第2の発光層と、前記第2の発光層上の共通層と、前記共通層上の共通電極と、を有し、
前記受光素子は、第2の画素電極と、前記第2の画素電極上の受光層と、前記受光層上の前記共通層と、前記共通層上の前記共通電極と、を有し、
前記共通層は、前記発光素子において、正孔注入層又は電子注入層の一方としての機能を有し、
前記共通層は、前記受光素子において、正孔輸送層又は電子輸送層の一方としての機能を有する表示装置。 - 請求項1において、
前記第1の発光層と、前記第2の発光層と、は同一の色の光を発する機能を有する表示装置。 - 請求項1又は2において、
第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の画素電極と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の画素電極と電気的に接続され、
前記第1のトランジスタ、及び前記第2のトランジスタは、チャネル形成領域にシリコンを有する表示装置。 - 請求項1又は2において、
第1のトランジスタと、第2のトランジスタと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第1の画素電極と電気的に接続され、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の画素電極と電気的に接続され、
前記第1のトランジスタ、及び前記第2のトランジスタは、チャネル形成領域に金属酸化物を有する表示装置。 - 第1の画素電極、第2の画素電極、及び接続電極を形成する第1の工程と、
前記第1の画素電極上、及び前記第2の画素電極上に、第1の発光膜と、中間膜と、第2の発光膜と、を順に成膜する第2の工程と、
前記第2の発光膜上、及び前記接続電極上に、第1の犠牲膜を形成する第3の工程と、
前記第1の犠牲膜、前記第2の発光膜、前記中間膜、及び前記第1の発光膜をエッチングして、前記第2の画素電極を露出させ、且つ、前記第1の画素電極上に第1の発光層と、前記第1の発光層上の中間層と、前記中間層上の第2の発光層と、前記第2の発光層上、及び前記接続電極上の第1の犠牲層と、を形成する第4の工程と、
前記第1の犠牲層上、及び前記第2の画素電極上に、受光膜を成膜する第5の工程と、
前記受光膜上に、第2の犠牲膜を形成する第6の工程と、
前記第2の犠牲膜、及び前記受光膜をエッチングして、前記第2の画素電極上の受光層と、前記受光層上の第2の犠牲層と、を形成する第7の工程と、
前記第1の犠牲層、及び前記第2の犠牲層を除去する第8の工程と、
前記接続電極と接する領域を有するように、前記第2の発光層上、及び前記受光層上に共通電極を形成する第9の工程と、を有する表示装置の作製方法。 - 請求項5において、
前記第1の発光膜、前記第2の発光膜、及び前記受光膜は、遮蔽マスクを用いた蒸着法により形成する表示装置の作製方法。 - 請求項5又は6において、
前記第1の犠牲膜と前記第2の犠牲膜は、同一の金属膜、合金膜、金属酸化物膜、半導体膜、又は無機絶縁膜を含み、
前記第4の工程において、前記第1の発光膜、及び前記第2の発光膜は、酸素を主成分に含まないエッチングガスを用いたドライエッチングによりエッチングされ、
前記第8の工程において、前記第1の犠牲層、及び前記第2の犠牲層は、水酸化テトラメチルアンモニウム水溶液、希フッ酸、シュウ酸、リン酸、酢酸、硝酸、又はこれらの混合液体を用いたウェットエッチングにより除去される表示装置の作製方法。 - 請求項7において、
前記第1の犠牲膜、及び前記第2の犠牲膜は、酸化アルミニウムを含む表示装置の作製方法。 - 請求項5乃至8のいずれか一において、
前記第9の工程より後に、前記共通電極上に保護層を形成する第10の工程を有する表示装置の作製方法。
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