WO2022157958A1 - Guide d'ondes optique et son procédé de production - Google Patents

Guide d'ondes optique et son procédé de production Download PDF

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Publication number
WO2022157958A1
WO2022157958A1 PCT/JP2021/002385 JP2021002385W WO2022157958A1 WO 2022157958 A1 WO2022157958 A1 WO 2022157958A1 JP 2021002385 W JP2021002385 W JP 2021002385W WO 2022157958 A1 WO2022157958 A1 WO 2022157958A1
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WIPO (PCT)
Prior art keywords
optical waveguide
clad layer
deuterium
amorphous
plasma
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PCT/JP2021/002385
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English (en)
Japanese (ja)
Inventor
泰 土澤
達郎 開
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日本電信電話株式会社
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Priority to PCT/JP2021/002385 priority Critical patent/WO2022157958A1/fr
Priority to PCT/JP2021/024832 priority patent/WO2022158001A1/fr
Priority to JP2022576949A priority patent/JPWO2022158001A1/ja
Publication of WO2022157958A1 publication Critical patent/WO2022157958A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films

Definitions

  • the present invention relates to an optical waveguide using amorphous silicon and a manufacturing method thereof.
  • Recent advances in silicon photonics technology have led to the development of waveguide fabrication technology that uses high-refractive-index silicon waveguides to allow light to propagate with low loss even in extremely fine and sharp bends, and has achieved compatibility with electronic devices and materials.
  • waveguide fabrication technology that uses high-refractive-index silicon waveguides to allow light to propagate with low loss even in extremely fine and sharp bends, and has achieved compatibility with electronic devices and materials.
  • This optoelectronics convergence technology is gaining importance as a key technology for realizing high speed, miniaturization, low power consumption, and low cost of devices in the field of communication.
  • silicon waveguides are also suitable for optical coupling with light-emitting devices and light-receiving devices made of compound semiconductors with similar refractive indices.
  • Technology development for integration is also progressing.
  • the present invention was made to solve this problem, and aims to realize an optical waveguide using amorphous silicon with low optical loss, high heat resistance, and high stability, and a manufacturing method thereof.
  • a method for manufacturing an optical waveguide according to the present invention includes steps of generating plasma of an inert gas and deuterium gas, and irradiating a silicon target with the plasma to cause sputtering. depositing silicon particles generated by the sputtering on the lower clad layer to form an amorphous silicon film containing deuterium; processing the amorphous silicon film into an optical waveguide core; and forming an upper cladding layer over the core.
  • the method for manufacturing an optical waveguide includes the steps of irradiating a silicon target with plasma of an inert gas to cause sputtering, depositing silicon particles generated by the sputtering on a lower clad layer, forming a first amorphous silicon film; introducing deuterium gas into the plasma to form a second amorphous silicon film; forming the first amorphous silicon film and the second amorphous silicon film;
  • the method includes a step of processing a silicon film into an optical waveguide core, and a step of forming an upper clad layer so as to cover the optical waveguide core.
  • an optical waveguide according to the present invention includes, in order, a lower clad layer, an optical waveguide core having amorphous silicon containing deuterium, and an upper clad layer covering the optical waveguide core.
  • an optical waveguide using amorphous silicon with low optical loss and high stability and a manufacturing method thereof can be provided.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of an optical waveguide according to a first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of a film forming apparatus in the optical waveguide manufacturing method according to the first embodiment of the present invention.
  • FIG. 3 is a flowchart of a film forming method in the optical waveguide manufacturing method according to the first embodiment of the present invention.
  • FIG. 4 is a diagram for explaining the method of manufacturing the optical waveguide according to the first embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional view showing the configuration of an optical waveguide according to a second embodiment of the invention.
  • FIG. 6 is a flow chart of a film forming method in the optical waveguide manufacturing method according to the second embodiment of the present invention.
  • FIG. 1 An optical waveguide according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4.
  • FIG. 1 An optical waveguide according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4.
  • FIG. 1 An optical waveguide according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4.
  • FIG. 1 An optical waveguide according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4.
  • the optical waveguide 10 sequentially covers a silicon (Si) substrate 11, a lower clad (SiO 2 ) layer 12, an optical waveguide core 13, and an optical waveguide core 13. and a cladding layer 14 .
  • the optical waveguide core 13 is made of amorphous Si containing deuterium, and has a width of about 300 to 500 nm and a thickness of about 200 to 300 nm, for example.
  • the clad layer 14 is made of SiO 2 and has a thickness of about 2 to 3 ⁇ m, for example.
  • FIG. 2 shows a cross-sectional view of an example of an ECR sputtering apparatus used as a film forming apparatus in this embodiment.
  • An amorphous Si thin film which will be the core material of the optical waveguide, is deposited by the ECR sputtering apparatus 100 .
  • the ECR sputtering apparatus 100 includes, in order, a chamber 101, a plasma generation chamber 102, a vacuum waveguide 106, and a waveguide 108, which are in communication with each other.
  • the chamber 101 communicates with an evacuation device (not shown), and the inside thereof together with the plasma generation chamber 102 is evacuated by the evacuation device.
  • the chamber 101 is provided with a sample table 104 on which a substrate 103 on which a film is to be formed is fixed.
  • the sample stage 104 tilts and rotates at a desired angle.
  • the sample table 104 is rotatable by a rotating mechanism (not shown).
  • a ring-shaped silicon target 105 is provided so as to surround the opening region in the chamber 101 where the plasma from the plasma generation chamber 102 is introduced.
  • the silicon target 105 is placed in a container 105 a made of an insulator, and the inner surface is exposed inside the chamber 101 .
  • the plasma generation chamber 102 communicates with a vacuum waveguide 106 , and the vacuum waveguide 106 is connected to a waveguide 108 via a quartz window 107 .
  • Waveguide 108 communicates with a microwave generator (not shown). The microwave generator, the waveguide 108, the quartz window 107, and the vacuum waveguide 106 constitute microwave supply means.
  • a magnetic coil 110 is also provided around and above the plasma generation chamber 102 . Note that there is also a configuration in which a mode converter is provided in the middle of the waveguide 108 .
  • a silicon substrate 103 on which a 3 ⁇ m thick thermal oxide film is formed is placed on a sample table 104 in a chamber 101 .
  • the silicon substrate 103 corresponds to the silicon substrate 11 in the optical waveguide 10 and the thermal oxide film corresponds to the lower clad layer (SiO 2 ) 12 .
  • argon gas which is an inert gas, is introduced into the plasma generation chamber 102 from the inert gas introduction unit 111 .
  • deuterium is introduced into the chamber 101 through a gas introduction section 112 installed separately from the inert gas introduction section, and the pressure inside the plasma generation chamber 102 is set to about 10-3 Pa, for example.
  • the ECR plasma forms a plasma flow in the direction of the sample stage 104 due to the divergent magnetic field from the magnetic coil 110 .
  • the microwave power supplied from the microwave generation unit is branched at the waveguide 108, and the plasma generation is performed in the vacuum waveguide 106 above the plasma generation chamber 102. It is coupled from chamber 102 through quartz window 107 .
  • This configuration can prevent scattering particles from the silicon target 105 from adhering to the quartz window 107, and can greatly improve the running time.
  • a high-frequency voltage is applied to the ring-shaped silicon target 105 provided between the plasma generation chamber 102 and the sample table 104, thereby attracting the plasma to the surface of the silicon target 105 and irradiating it. to cause sputtering.
  • particles of the target material fly out from the surface of the silicon target 105 and reach the substrate 103 together with the plasma emitted from the plasma generation chamber 102 .
  • deuterium gas activated by plasma also reaches the substrate 103 together with the particles.
  • amorphous Si containing deuterium is deposited on the substrate 103, and an amorphous Si film is formed on the thermal oxide film of the substrate 103 (step 2_12).
  • the film thickness to be deposited can be controlled by checking the deposition rate in advance and controlling the sputtering time. For example, the sputtering is stopped when the film thickness of the amorphous Si to be deposited reaches 200 nm (step 2_13). As a result, an amorphous Si film with a thickness of 200 nm is formed on the thermal oxide film with a thickness of 3 ⁇ m.
  • an oxide film (SiO 2 ) 12 is formed on a silicon substrate 11 (step 1).
  • an amorphous Si thin film 13_1 is formed on the oxide film (SiO 2 ) 12 by the film forming method described above (step 2).
  • a mask pattern 15 of SiO 2 is formed on the amorphous Si thin film 13_1 by a normal lithographic technique (step 3).
  • a silicon oxide film is formed on an amorphous Si thin film by plasma CVD.
  • a resist mask pattern is formed on the silicon oxide film by lithography.
  • the silicon oxide film is selectively etched by dry etching using a mixed gas of SF6 gas and a gas containing carbon and fluorine such as C2F6 . Subsequently, the remaining resist pattern is removed by, for example, ashing with ozone. As a result, a mask pattern 15 made of a silicon oxide film having a rectangular cross section is formed.
  • Step 4 by dry etching using a gas containing carbon and fluorine such as CF 4 gas, a mask pattern 15 made of a silicon oxide film is used to hide the amorphous Si thin film 13_1, thereby forming an optical waveguide made of amorphous silicon having a rectangular cross section. A core 13 is formed.
  • an upper clad layer 14 made of silicon oxide is formed by plasma CVD to cover the optical waveguide core 13 (step 5).
  • the SiO 2 mask pattern 15 may or may not be removed before forming the upper clad layer 14 . If not removed, the remaining SiO 2 mask pattern 15 forms the upper cladding layer together with the overlying upper cladding layer 14 .
  • a deuterated (deuterium-containing) gas as a material gas for film formation.
  • the upper cladding layer 14 has silicon oxide containing deuterium.
  • the upper cladding layer 14 may be entirely made of silicon oxide (SiO 2 ) containing deuterium, or may partially contain silicon oxide (SiO 2 ) containing hydrogen.
  • a high-quality film can be formed at a low temperature of 200° C. or less, so the film can be formed without damaging the optical waveguide core made of amorphous Si during film formation.
  • amorphous Si containing deuterium for the core is explained below. Since amorphous Si has a large optical loss due to light absorption by dangling bonds, it is difficult to practically use amorphous Si for waveguide cores.
  • deuterium in amorphous Si and terminating dangling bonds with deuterium by including deuterium in amorphous Si and terminating dangling bonds with deuterium, light absorption can be suppressed and light loss can be reduced.
  • deuterium since deuterium has a stronger bond with the dangling bonds of amorphous Si than hydrogen, the deuterium-terminated dangling bonds are maintained even when external energy is input. As a result, optical losses do not increase.
  • an optical waveguide that does not lose light due to temperature rise in the fabrication process of optical integrated devices can be realized by using amorphous Si containing deuterium for the core.
  • an optical waveguide with high heat resistance, stability, and low loss is realized by using amorphous Si containing deuterium as the optical waveguide core.
  • amorphous Si containing deuterium as the optical waveguide core.
  • SiO 2 containing deuterium as a clad, it is possible to realize an optical waveguide with higher heat resistance, stability, and low loss.
  • this optical waveguide can be applied to an optical integrated device, and high performance of the optical integrated device can be realized.
  • the optical waveguide core is made of amorphous Si containing deuterium, but the optical waveguide core may partially contain amorphous Si or Si (crystal) that does not contain deuterium.
  • the optical waveguide core may have amorphous Si containing deuterium.
  • FIG. 5 and 6 An optical waveguide according to a second embodiment of the present invention will be described with reference to FIGS. 5 and 6.
  • FIG. The optical waveguide 20 and its manufacturing method according to the present embodiment are substantially the same as those of the first embodiment, but differ in the configuration of the optical waveguide core.
  • the optical waveguide 20 includes, in order, a Si (silicon) substrate 21, a SiO2 layer (lower clad layer) 22, an optical waveguide core 23, and an optical waveguide core 23. and an overlying upper cladding layer 24 .
  • the optical waveguide core 23 is made of amorphous Si, and has a width of approximately 300 to 500 nm and a thickness of approximately 200 to 300 nm, for example.
  • the cladding layer 24 is made of SiO 2 and has a thickness of, for example, about 2 to 3 ⁇ m.
  • the optical waveguide core 23 sequentially comprises a lower core 231 in contact with the SiO 2 layer 22 and an upper core 232 .
  • the lower core 231 does not contain deuterium D
  • the upper core 232 contains deuterium D.
  • Amorphous Si containing high deuterium can be formed on the lower cladding layer 22 .
  • the upper core 232 is made thicker than the lower core 231 so that light is guided through the upper core 232 mainly containing deuterium.
  • the thicknesses of the lower core 231 and the upper core 232 can be controlled by adjusting the time to start introducing deuterium and the sputtering time in the manufacturing method described later.
  • a silicon substrate 103 having a thermal oxide film of 3 ⁇ m formed thereon is placed on a sample table 104 in a chamber 101.
  • the silicon substrate 103 corresponds to the silicon substrate 21 in the optical waveguide 20 and the thermal oxide film corresponds to the lower clad layer (SiO 2 ) 22 .
  • a shutter is installed directly above the sample table 104 and the shutter is closed (a state in which the plasma is blocked).
  • argon gas which is an inert gas
  • the inert gas introduction unit 111 is introduced from the inert gas introduction unit 111 at a flow rate of 20 sccm, and the pressure in the plasma generation chamber 102 is set to about 10 to 3 Pa. do.
  • ECR electron cyclotron resonance
  • the shutter is opened to irradiate the substrate 103 with plasma to start forming an amorphous Si film on the substrate 103 for a predetermined time, for example, about 2 minutes (for example, during the film forming time of 10 nm thick amorphous Si). equivalent) is maintained (step 2_221).
  • deuterium is introduced from the gas introduction part 112 at a flow rate of 5 sccm and maintained for a predetermined time, for example, about 15 minutes (step 2_222). Then close the shutter. As a result, amorphous Si containing deuterium is continuously formed on the 10 nm-thick amorphous Si to a total thickness of 200 nm.
  • step 2_23 the microwave and magnetic field are stopped to stop plasma generation.
  • the introduction of the gas is stopped, and the substrate is taken out from the chamber after a predetermined time has passed.
  • An optical waveguide is manufactured in the same steps as in the first embodiment using the amorphous Si film formed in the steps 2_21 to 2_23 described above.
  • the stability of the optical waveguide core is made of amorphous Si containing deuterium, which has excellent adhesion to the lower clad layer and the substrate, and has low loss. It is possible to realize an optical waveguide with a high Furthermore, this optical waveguide can be applied to an optical integrated device, and high performance of the optical integrated device can be realized.
  • the upper core of the optical waveguide core is made of amorphous Si containing deuterium
  • the upper core may partially contain amorphous Si or Si (crystal) that does not contain deuterium.
  • the upper core may have amorphous Si containing deuterium.
  • the lower core of the optical waveguide core is made of amorphous Si that does not contain deuterium
  • the lower core may also contain amorphous Si or Si (crystal) that partially contains deuterium.
  • the lower core may have amorphous Si that does not contain deuterium.
  • SiN x silicon nitride
  • SiN x O y silicon nitride
  • Any dielectric material may be used as long as it has a dielectric constant lower than the dielectric constant of amorphous Si, which is the optical waveguide core, and can confine guided light in the optical waveguide core.
  • argon gas is used as an inert gas in the embodiment of the present invention
  • a rare gas such as xenon or krypton may be used.
  • the present invention is not limited to this.
  • Other materials may be used for the substrate.
  • a glass substrate such as quartz may be used.
  • the substrate since the substrate becomes the lower clad layer, it is not necessary to form a lower clad layer made of SiO2 or the like on the substrate.
  • a Si substrate having an oxide film on its surface as a lower cladding layer is installed in a film forming apparatus, but the present invention is not limited to this, and a substrate (for example, a Si substrate) is installed in a film forming apparatus. Then, a lower clad layer may be formed on the substrate by a film forming apparatus.
  • the shutter is used in the film forming apparatus in the second embodiment, but of course the shutter may be used in the film forming apparatus in the first embodiment.
  • the present invention can be applied to silicon photonics devices and can be applied to devices for optical communication systems.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Un procédé de production d'un guide d'ondes optique selon la présente invention comprend : une étape de génération de plasma de gaz de deutérium et de gaz inerte ; une étape consistant à provoquer une pulvérisation par irradiation d'une cible de silicium avec un plasma ; une étape consistant à déposer, sur une couche de revêtement inférieure (12), des particules de silicium générées par la pulvérisation et formant un film de silicium amorphe qui contient du deutérium ; une étape pour traiter le film de silicium amorphe dans un noyau de guide d'ondes optique (13) ; et une étape de formation d'une couche de revêtement supérieure (14) de manière à recouvrir le noyau de guide d'ondes optique (13).　En conséquence, le procédé de production d'un guide d'ondes optique selon la présente invention permet la fourniture d'un guide d'ondes optique qui utilise du silicium amorphe qui présente une faible perte optique et une stabilité élevée.
PCT/JP2021/002385 2021-01-25 2021-01-25 Guide d'ondes optique et son procédé de production WO2022157958A1 (fr)

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PCT/JP2021/002385 WO2022157958A1 (fr) 2021-01-25 2021-01-25 Guide d'ondes optique et son procédé de production
PCT/JP2021/024832 WO2022158001A1 (fr) 2021-01-25 2021-06-30 Guide d'ondes optique et son procédé de production
JP2022576949A JPWO2022158001A1 (fr) 2021-01-25 2021-06-30

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PCT/JP2021/002385 WO2022157958A1 (fr) 2021-01-25 2021-01-25 Guide d'ondes optique et son procédé de production

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040240821A1 (en) * 2003-05-30 2004-12-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
US20070147762A1 (en) * 2005-10-07 2007-06-28 Kwakernaak Martin H Interface for a-Si waveguides and III/V waveguides
US20080253728A1 (en) * 2006-09-07 2008-10-16 Massachusetts Institute Of Technology Microphotonic waveguide including core/cladding interface layer
JP2010263153A (ja) * 2009-05-11 2010-11-18 Sumitomo Electric Ind Ltd 半導体集積光デバイス及びその作製方法
WO2019225329A1 (fr) * 2018-05-21 2019-11-28 日本電信電話株式会社 Dispositif optique intégré et son procédé de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3197036B2 (ja) * 1991-11-14 2001-08-13 鐘淵化学工業株式会社 結晶質シリコン薄膜の形成方法
JPH06326030A (ja) * 1993-05-13 1994-11-25 Canon Inc 半導体製造方法及び製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040240821A1 (en) * 2003-05-30 2004-12-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
US20070147762A1 (en) * 2005-10-07 2007-06-28 Kwakernaak Martin H Interface for a-Si waveguides and III/V waveguides
US20080253728A1 (en) * 2006-09-07 2008-10-16 Massachusetts Institute Of Technology Microphotonic waveguide including core/cladding interface layer
JP2010263153A (ja) * 2009-05-11 2010-11-18 Sumitomo Electric Ind Ltd 半導体集積光デバイス及びその作製方法
WO2019225329A1 (fr) * 2018-05-21 2019-11-28 日本電信電話株式会社 Dispositif optique intégré et son procédé de fabrication

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