WO2022126479A1 - 可印刷曲面钙钛矿太阳能电池及其制备方法 - Google Patents

可印刷曲面钙钛矿太阳能电池及其制备方法 Download PDF

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WO2022126479A1
WO2022126479A1 PCT/CN2020/137186 CN2020137186W WO2022126479A1 WO 2022126479 A1 WO2022126479 A1 WO 2022126479A1 CN 2020137186 W CN2020137186 W CN 2020137186W WO 2022126479 A1 WO2022126479 A1 WO 2022126479A1
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porous
layer
electron transport
curved
slurry
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PCT/CN2020/137186
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English (en)
French (fr)
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盛余松
戴佳坤
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湖北万度光能有限责任公司
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Priority to CN202080061401.1A priority Critical patent/CN115039245A/zh
Priority to EP20951832.3A priority patent/EP4266391A4/en
Priority to JP2022515653A priority patent/JP7430781B2/ja
Priority to PCT/CN2020/137186 priority patent/WO2022126479A1/zh
Priority to US17/688,812 priority patent/US11776763B2/en
Publication of WO2022126479A1 publication Critical patent/WO2022126479A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a printable curved surface perovskite solar cell, and also relates to a preparation method of the printable curved surface perovskite solar cell.
  • the mainstream solar cell technology is mainly used in large-scale photovoltaic power stations to realize large-scale power generation systems, while the development of portable solar cell technology is relatively backward.
  • portable solar cell technology Considering the troubles caused by the loss of car batteries, the exhaustion of mobile phones, and the urgent demand for power in field activities, it is very important to develop portable solar cell technology, especially the integration of solar cells with car roofs, mobile phone casings, portable tents, etc. Integration can play an important role at a specific moment, so it has important development prospects and can bring significant economic benefits.
  • CN107146847A discloses a carbon counter electrode perovskite solar cell, comprising from bottom to top a transparent conductive substrate, a photoanode, an insulating layer, a first carbon layer and a second carbon layer, the first carbon layer is a porous carbon layer, and the second carbon layer is a porous carbon layer.
  • the carbon layer is a low temperature carbon layer.
  • the preparation method of the perovskite solar cell includes the following steps: (1) preparing a dense layer on a transparent conductive substrate; (2) preparing a layer of TiO2 mesoporous layer and a layer of TiO2 mesoporous layer on the dense layer in turn by screen printing ZrO 2 insulating layer; (3) preparing a porous first carbon layer on the insulating layer; (4) dropping the perovskite precursor slurry onto the surface of the first carbon layer, filling it to the dense layer, TiO 2 interlayer In the porous thin film layers of the porous layer, the ZrO 2 insulating layer and the first carbon layer; (5) preparing a second carbon layer on the first carbon layer.
  • the substrate of the above-mentioned perovskite solar cell is in the shape of a flat plate.
  • the above preparation method cannot prepare curved perovskite solar cells.
  • CN108550705A discloses a perovskite solar cell module, comprising a conductive substrate, a perovskite light absorbing layer and a counter electrode; a hole blocking layer, an electron transport layer and an insulating layer are arranged between the conductive substrate and the perovskite light absorbing layer; A hole transport layer is provided between the counter electrode and the perovskite light absorbing layer.
  • the preparation method of the perovskite solar cell includes the following steps: preparing a TiO2 dense layer on a FTO glass substrate; screen printing a titanium dioxide paste on the dense layer as an electron transport layer, wherein the solvent is terpineol; The zirconium dioxide slurry was screen-printed on the layer, and the solvent was terpineol; the solvent of CH 3 NH 3 PbI 3 perovskite precursor slurry was dimethyl sulfoxide and DMF, and the perovskite was prepared by spin coating Light absorbing layer; on the perovskite light absorbing layer, screen-printed carbon paste is used as a hole transport layer, the solvent is terpineol, and the counter electrode is formed of a normal temperature release conductive tape to obtain a perovskite solar cell.
  • the above perovskite solar cell needs to be provided with a hole blocking layer and a hole transport layer, and the substrate is in the shape of a flat plate.
  • the above preparation method cannot prepare
  • An object of the present invention is to provide a printable curved surface perovskite solar cell, the substrate of which is a curved surface. Such cells can be easily integrated with other items, expanding the use of perovskite solar cells.
  • Another object of the present invention is to provide a preparation method of a printable curved perovskite solar cell, which can prepare a curved perovskite solar cell. Further, the surface perovskite solar cells prepared by this method have high uniformity of each functional layer.
  • the present invention provides a printable curved perovskite solar cell comprising a curved conductive substrate, a porous electron transport layer, a porous insulating spacer layer, a porous back electrode layer and a perovskite filler;
  • the curved conductive substrate includes a curved transparent substrate and a conductive layer deposited on the curved transparent substrate;
  • porous electron transport layer, the porous insulating spacer layer and the porous back electrode layer are sequentially deposited on the conductive layer from bottom to top;
  • the perovskite filler is filled in the pores of the porous electron transport layer, the porous insulating spacer layer and the porous back electrode layer.
  • the thickness of the porous electron transport layer is 300-1000 nm
  • the thickness of the porous insulating spacer layer is 1-6 ⁇ m
  • the thickness of the porous back electrode layer is 300-1000 nm. 10 to 40 ⁇ m.
  • the present invention provides a preparation method of a printable curved perovskite solar cell, comprising the following steps:
  • the perovskite precursor slurry is applied on the porous back electrode layer of the third preform, so that the perovskite precursor slurry is filled into the porous electron transport layer, the porous insulating spacer layer, and the porous back electrode layer. In the pores, a printable curved perovskite solar cell is obtained.
  • the first hot-melt adhesive and the second hot-melt adhesive are independently selected from polyurethane, polyolefin elastomer, polyethersulfone resin, copolyamide, ethylene-acrylic acid copolymer or ethylene-acetic acid One of the ethylene copolymers.
  • the porous electron transport layer slurry includes an electron transport material and terpineol, and the solid content of the electron transport material in the porous electron transport layer slurry is 2-10wt%; the The terpineol contains alpha-terpineol, and the content of the alpha-terpineol in the terpineol is more than 30wt%; the electron transport material is selected from titanium dioxide, tin dioxide, zinc oxide or barium stannate one or more of.
  • the slurry for the porous insulating spacer layer comprises insulating material, ethyl cellulose and terpineol; wherein, the mass ratio of insulating material to ethyl cellulose is 1:0.15-0.4, The mass ratio of insulating material to terpineol is 1:2 to 6; the insulating material is selected from one or more of zirconium dioxide, silicon dioxide, alumina or barium titanate; terpineol contains ⁇ -pine oleyl alcohol, and the content of the ⁇ -terpineol in the terpineol is more than 30wt%; the porous back electrode layer slurry includes graphite, carbon black, zirconium dioxide, ethyl cellulose and terpineol; The mass ratio of graphite to carbon black is 1:0.15-0.5, the mass ratio of graphite to zirconium dioxide is 1:0.1-0.5, and the mass ratio of graphite to
  • the porous insulating spacer layer slurry further comprises glacial acetic acid, and the mass ratio of the insulating material to the glacial acetic acid is 1:0.05-1; the porous back electrode layer slurry further comprises glacial acetic acid , the mass ratio of the graphite to the glacial acetic acid is 1:0.01-0.6.
  • the first preform with the porous electron transport layer is annealed at 300 ⁇ 600° C. for 10 ⁇ 60 min, and then used in step (3).
  • the etching line P2 is located on the left side of the etching line P1, and is tangent to the etching line P1; the width of the etching line P2 is 0.3-1 mm.
  • Laser etching is performed on the third preform with the porous back electrode layer to form an etching line P3, and then annealed at 300-600° C. for 10-60 min;
  • the etching line P3 is located on the left side of the etching line P2, and is tangent to the etching line P2, and the width of the etching line P3 is 0.05-0.3 mm.
  • the substrate of the printable perovskite solar cell of the present invention is a curved surface, which is convenient for integration with other items (eg, car roof, mobile phone case, portable tent, etc.), can be used in portable solar cells, and expands the printable perovskite The scope of use of solar cells.
  • the present invention covers the coating slurry with a hot-melt adhesive film, so that the coating slurry can be fixed on the curved surface substrate, the coating slurry is prevented from being deposited along the curvature of the substrate, and the uniformity of each functional layer is improved.
  • the coating slurry has suitable fluidity, and the uniformity of each functional layer is further improved.
  • FIG. 1 is a physical view of the printable curved perovskite solar cell obtained in Example 1.
  • FIG. 2 is a schematic structural diagram of a printable curved perovskite solar cell of the present invention.
  • Example 3 is a graph showing the viscosity of the porous electron transport layer slurry of Example 1 and Example 2 as a function of temperature.
  • FIG. 4 is a graph showing the viscosity of the porous insulating spacer layer pastes of Example 1 and Example 2 as a function of temperature.
  • FIG. 5(A) is a top view of a three-dimensional profile topography of the porous electron transport layer of Example 1.
  • FIG. 5(B) is a front view of a three-dimensional profile topography of the porous electron transport layer of Example 1.
  • FIG. 6(A) is a top view of the three-dimensional profile topography of the porous electron transport layer of Example 2.
  • FIG. 6(A) is a top view of the three-dimensional profile topography of the porous electron transport layer of Example 2.
  • FIG. 6(B) is a front view of a three-dimensional profile topography of the porous electron transport layer of Example 2.
  • FIG. 6(B) is a front view of a three-dimensional profile topography of the porous electron transport layer of Example 2.
  • FIG. 7(A) is a top view of the three-dimensional profile topography of the multi-insulation spacer layer of Example 1.
  • FIG. 7(B) is a front view of a three-dimensional topography of the multi-insulating spacer layer of Example 1.
  • FIG. 8(A) is a top view of a three-dimensional profile topography of the multiple insulating spacer layers of Example 2.
  • FIG. 8(A) is a top view of a three-dimensional profile topography of the multiple insulating spacer layers of Example 2.
  • FIG. 8(B) is a front view of a three-dimensional profile topography of the multi-insulating spacer layer of Example 2.
  • FIG. 8(B) is a front view of a three-dimensional profile topography of the multi-insulating spacer layer of Example 2.
  • 1-curved transparent substrate 2-conductive layer; 3-porous electron transport layer; 4-porous insulating spacer layer; 5-porous back electrode layer.
  • the substrate of the printable curved perovskite solar cell of the present invention has a certain curvature. This is different from existing printable perovskite solar cells that use planar materials as substrates. Because the substrate has a certain curvature, it greatly increases the fluidity of the printed wet film, which makes the fabrication of perovskite solar cells extremely difficult. Although printable planar perovskite solar cells have been widely used, printable curved perovskite solar cells have not yet been reported.
  • the printable curved perovskite solar cell of the present invention comprises a curved conductive substrate, a porous electron transport layer, a porous insulating spacer layer, a porous back electrode layer and a perovskite filler.
  • the porous electron transport layer, the porous insulating spacer layer, and the porous back electrode layer are also curved structures.
  • Perovskite fillers are filled in the voids of the porous electron transport layer, the porous insulating spacer layer, and the porous back electrode layer.
  • the printable perovskite solar cells of the present invention may also include an encapsulation layer.
  • a printable curved perovskite solar cell consists of a curved conductive substrate, a porous electron transport layer, a porous insulating spacer layer, a porous back electrode layer, and a perovskite filler.
  • the printable curved perovskite solar cells consist of a curved conductive substrate, a porous electron transport layer, a porous insulating spacer layer, a porous back electrode layer, a perovskite filler, and an encapsulation layer.
  • the curved conductive substrate of the present invention may include a curved transparent substrate and a conductive layer. Conductive layers can be deposited on curved transparent substrates.
  • the curved conductive substrate of the present invention is composed of a curved transparent substrate and a conductive layer deposited on the curved transparent substrate.
  • the so-called "surface” refers to the trajectory formed by a moving line moving continuously in space.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes but is not limited to one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the curved transparent substrate can be transparent glass or transparent polymer.
  • transparent polymers include, but are not limited to, polyvinyl chloride, polymethyl methacrylate, polycarbonate, polystyrene, polyethylene, ethylene vinyl acetate.
  • the curved transparent substrate is transparent glass.
  • the conductive layer can be formed of fluorine-doped tin oxide, tin-doped indium oxide, aluminum-doped zinc oxide, graphene, transparent metal conductive film, and the like. According to one embodiment of the present invention, the conductive layer is formed of fluorine-doped tin oxide.
  • the porous electron transport layer of the present invention can be deposited on a conductive layer.
  • the porous electron transport layer can also be curved.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes but is not limited to one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the porous electron transport layer may be formed of titanium dioxide, tin dioxide, zinc oxide, or barium stannate. According to one embodiment of the present invention, the porous electron transport layer is formed of titanium dioxide.
  • the thickness of the porous electron transport layer may be 300-1000 nm; preferably 400-800 nm; more preferably 500-600 nm.
  • the pore size of the porous electron transport layer may be 2-100 nm; preferably 15-50 nm; more preferably 25-35 nm.
  • the grain size of the porous electron transport layer may be 10-50 nm; preferably 15-35 nm; more preferably 25-35 nm.
  • the porous insulating spacer layer of the present invention can be deposited on the porous electron transport layer.
  • the porous insulating spacer layer can also be curved.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes but is not limited to one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the porous insulating spacer layer may be formed of zirconium dioxide, silicon dioxide, aluminum oxide, or barium titanate. According to one embodiment of the present invention, the porous insulating spacer layer is formed of zirconium dioxide.
  • the thickness of the porous insulating spacer layer may be 1-6 ⁇ m; preferably 2-5 ⁇ m; more preferably 3-4 ⁇ m.
  • the pore size of the porous electron transport layer may be 10-500 nm; preferably 30-200 nm; more preferably 50-100 nm.
  • the grain size of the porous insulating spacer layer may be 10-500 nm; preferably 30-200 nm; more preferably 100-200 nm.
  • the porous back electrode layer of the present invention can be deposited on a porous insulating spacer layer.
  • the porous back electrode layer is also curved.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes but is not limited to one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the porous back electrode layer may be formed of a raw material including a porous electrode material.
  • the porous electrode material may be a porous carbon electrode material or a porous conductive oxide electrode material.
  • Examples of porous carbon electrode materials include, but are not limited to, graphite, carbon black, activated carbon, graphene, carbon nanotubes.
  • Porous conductive oxide electrode materials include, but are not limited to, fluorine-doped tin oxide, tin-doped indium oxide, and aluminum-doped zinc oxide.
  • the porous back electrode layer is formed of graphite, carbon black and zirconia.
  • the mass ratio of graphite to carbon black may be 1:0.15-0.5; preferably 1:0.25-0.4; more preferably 1:0.3-0.35.
  • the mass ratio of graphite to zirconium dioxide may be 1:0.1-0.5; preferably 1:0.1-0.3; more preferably 1:0.15-0.2. In this way, better curing and strengthening effects can be achieved, thereby improving the quality of the film, thereby improving the electrical properties and filling properties of the film.
  • the thickness of the porous back electrode layer may be 10-50 ⁇ m; preferably 15-40 ⁇ m; more preferably 20-30 ⁇ m.
  • the size of the porous back electrode graphite sheet may be 1-100 ⁇ m; preferably 5-50 ⁇ m; more preferably 10-20 ⁇ m.
  • the perovskite filler of the present invention is filled in the pores of the porous electron transport layer, the porous insulating spacer layer and the porous backplane electrode layer.
  • the perovskite filler is a compound having the structure shown in formula (I).
  • A is selected from cations formed by alkylamine, formamidine or alkali metals; preferably, A is selected from cations formed by methylamine, formamidine, cesium or rubidium. More preferably, A is a cation formed from methylamine.
  • B is selected from lead or tin formed cations. Preferably, B is a lead-forming cation.
  • X is selected from iodine, bromine, chlorine or halogen-like anions. Examples of halogen-like species include, but are not limited to, cyanogen, thiocyanate, selenocyanide, oxycyanogen, and carbon azide disulfide.
  • X is an iodide ion.
  • the compound having a perovskite structure is lead iodide methylamine (CH 3 NH 3 PbI 3 ).
  • the encapsulation layer of the present invention may include a hot melt adhesive film and a flexible backsheet.
  • a hot melt adhesive film covers the porous back electrode layer.
  • the flexible backsheet is covered with hot melt adhesive film.
  • the hot melt adhesive film of the present invention may be formed of polyurethane or ethylene-vinyl acetate copolymer.
  • the hot melt adhesive film can also be curved.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes, but is not limited to, one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the flexible backsheet of the present invention can be a flexible functional film with waterproof and insulating function.
  • the flexible backplane can also be curved.
  • the curved surface of the present invention may be a ruled curved surface or a hyperbolic curved surface.
  • the ruled surface includes but is not limited to one of a cylindrical surface, a conical surface, an elliptical cylindrical surface, an elliptical conical surface, a conical surface or a cylindrical surface.
  • Hyperbolic surfaces include but are not limited to spherical surfaces and torus surfaces. According to one embodiment of the present invention, the curved surface is a cylindrical surface.
  • the preparation method of the curved perovskite solar cell of the present invention comprises the following steps: (1) the step of forming the etching line P1; (2) the step of forming the porous electron transport layer; (3) the step of forming the porous insulating spacer layer; ( 4) the step of forming the porous back electrode layer; (5) the step of filling the perovskite.
  • the preparation method of the present invention further includes (6) an encapsulation step.
  • the porous electron transport layer, the porous insulating spacer layer, and the porous back electrode layer can be annealed separately, or two layers can be annealed together, or three layers can be annealed together. A detailed description is given below.
  • the cleaned curved conductive substrate is laser etched to form an etched line P1.
  • the cleaned curved conductive substrate refers to the curved conductive substrate after surface stains are removed.
  • the curved conductive substrate is placed in a cleaning agent for ultrasonic cleaning, then placed in ethanol for cleaning, and dried on the curved conductive substrate after cleaning to obtain a clean curved conductive substrate.
  • the cleaning agent can be selected from Willows, Mr. Wittmann, Jessica, LOPO, Jingan, White Cat, Liby, Kleen MCT511 and III one or more of the cleaning solutions; preferably, the cleaning agent is selected from Jingan, Baimao, Liby, Kleen MCT511 and one or more of III cleaning solutions; more preferably III cleaning solution.
  • the time of ultrasonic cleaning in the cleaning agent may be 5-30 min; preferably 10-25 min; more preferably 15-20 min.
  • the time of ultrasonic cleaning in ethanol can be 1-20 min; preferably 3-15 min; more preferably 3-10 min.
  • the drying temperature can be 50-80°C; preferably 55-75°C; more preferably 55-60°C. This enables more thorough removal of stains on the curved conductive substrate.
  • a nanosecond laser etching machine can be used to laser-etch the curved conductive substrate to form an etching line P1.
  • the width of the etching line P1 may be 0.02-0.15 mm; preferably 0.03-0.1 mm; more preferably 0.05-0.1 mm.
  • the curved conductive substrate with the etched line P1 is cleaned. Specifically, the curved conductive substrate with the etching line P1 was placed in deionized water for ultrasonic cleaning, and then placed in ethanol for ultrasonic cleaning. Dry the cleaned curved conductive substrate until its surface is free of moisture and spot impurities.
  • the time of ultrasonic cleaning in deionized water can be 5-30 min; preferably 10-25 min; more preferably 15-20 min.
  • the time of ultrasonic cleaning in ethanol can be 1-20 min; preferably 3-15 min; more preferably 3-10 min.
  • the drying temperature can be 50-80°C; preferably 55-75°C; more preferably 60-70°C. This ensures the cleanliness of the site to be deposited to ensure the smooth progress of subsequent steps.
  • the cleaned curved conductive substrate with the etched line P1 is treated with ultraviolet rays and ozone.
  • the treatment time may be 5-30 min; preferably 10-20 min; more preferably 10-15 min.
  • Ultraviolet and ozone can clean the organic matter on the surface of the curved conductive substrate and improve the wettability of the surface of the curved conductive substrate.
  • the porous electron transport layer slurry is covered on the conductive layer of the curved conductive substrate with the etched line P1, and then hot melt adhesive is covered on the porous electron transport layer slurry to form a first hot melt adhesive film; After the melt adhesive film is removed, a first preform having a porous electron transport layer is obtained.
  • the conductive layer of the curved conductive substrate with the etched line P1 is uniformly covered with the porous electron transport layer slurry, and then the first hot melt adhesive is uniformly coated on the porous electron transport layer slurry, and the first hot melt is obtained by drying. Melting the adhesive film, and removing the first hot-melting adhesive film to obtain a first prefabricated product with a porous electron transport layer.
  • the manner of removing the first hot-melt adhesive film is not particularly limited, and conventional methods in the art can be used.
  • the slurry for the porous electron transport layer can be covered on the conductive layer of the curved conductive substrate with the etched lines P1 by techniques such as screen printing, slot coating, blade coating, inkjet printing, spray deposition, and the like.
  • the porous electron transport layer paste is printed on the conductive layer of the curved conductive substrate having the etched lines P1 by using a screen printing technique. Screen printing technology can be achieved by curved screen printers.
  • the porous electron transport layer slurry may include the electron transport material and terpineol.
  • the electron transport material may be selected from one of titanium dioxide, tin dioxide, zinc oxide or barium stannate. Preferably, the electron transport material is titanium dioxide.
  • the pore size of the electron transport material may be 2 to 50 nm; preferably 15 to 35 nm; more preferably 25 to 35 nm.
  • the grain size of the electron transport material may be 10-40 nm; preferably 15-35 nm; more preferably 25-35 nm.
  • the terpineol may be selected from one or more of alpha-terpineol, beta-terpineol or gamma-terpineol.
  • alpha-terpineol is included in the terpineol. More preferably, the terpineol is alpha-terpineol.
  • the dosage of ⁇ -terpineol in terpineol is 30wt% or more; preferably 80wt% or more; more preferably 90wt% or more.
  • the slurry prepared with ⁇ -terpineol is jelly-like at room temperature, but has good fluidity when the temperature is higher than 40 °C, which is beneficial to the formation of a uniform porous electron transport layer on the curved conductive substrate.
  • the porous electron transport layer slurry includes titanium dioxide and alpha-terpineol.
  • Titanium dioxide can be provided from titanium dioxide slurries. Titanium dioxide slurries can be purchased from Greatcellsolar. Preferably, the original titanium dioxide slurry is selected from NR-18 or NR30 of Greatcellsolar Company. According to one embodiment of the present invention, the titanium dioxide original slurry is a titanium dioxide original slurry of the model NR-30 purchased from Greatcellsolar Company.
  • the solid content of the electron transport material in the slurry of the porous electron transport layer may be 2-10 wt %; preferably 3-7 wt %; more preferably 4-5 wt %.
  • the porous electron transport layer slurry is configured in a mixed manner.
  • the step of vacuum defoaming is also included after mixing.
  • the vacuum defoaming time can be 20-80 min; preferably 30-70 min; more preferably 40-50 min. This can improve the uniformity of film formation.
  • the porous electron transport layer slurry After the porous electron transport layer slurry is covered on the conductive layer of the curved conductive substrate with the etched line P1, it can be allowed to stand at room temperature for 3 to 20 minutes, preferably 5 to 15 minutes, more preferably 10 to 15 minutes;
  • the electron transport layer paste is coated with a first thermal sol.
  • the first hot melt adhesive may be applied first, and then allowed to stand at room temperature.
  • the first hot melt adhesive can also be directly applied without standing at room temperature. Standing can increase the flatness of the film surface, and the film without standing is rough.
  • the first hot melt adhesive may be selected from one of polyurethane hot melt adhesive, polyolefin elastomer, polyethersulfone resin, copolyamide, ethylene-acrylic acid copolymer, and ethylene-vinyl acetate copolymer hot melt adhesive.
  • the first hot melt adhesive is a polyurethane hot melt adhesive.
  • the first hot-melt adhesive is selected from HSL-U60 type hot-melt adhesive of Shenzhen Hengshenglong Plastic Products Co., Ltd., XJU-5C type hot-melt adhesive of Shanghai Xingxia Polymer Products Co., Ltd., Jiangsu Hehexin One of the LV368B-10-FQ type hot melt adhesives from Materials Co., Ltd.
  • the first hot-melt adhesive is XJU-5C type hot-melt adhesive from Shanghai Xingxia Polymer Products Co., Ltd.
  • the first hot-melt adhesive can help fix the slurry of the porous electron transport layer on the curved conductive substrate, improve the uniformity of the porous electron transport layer, be easy to remove after drying, and will not affect the performance of the perovskite solar cell.
  • Drying can be carried out in a vacuum drying oven.
  • the drying temperature may be 80-130°C; preferably 90-120°C; more preferably 90-110°C.
  • the drying time may be 5-20 min; preferably 10-20 min; more preferably 13-17 min. In this way, the hot melt adhesive can be formed into a solid film for easy removal, and the porous electron transport layer can be deposited on the curved conductive substrate.
  • the first preform with the porous electron transport layer is annealed.
  • the annealing temperature may be 300-600°C; preferably 400-600°C; more preferably 450-550°C.
  • the annealing time may be 10-60 min; preferably 20-50 min; more preferably 20-40 min. This can enhance the performance of the porous electron transport layer.
  • the porous insulating spacer layer slurry is covered on the porous electron transport layer of the first preform, and then the second hot-melt adhesive is covered on the porous insulating spacer layer slurry to form a second hot-melt adhesive film; After the adhesive film is removed, a second preform having a porous insulating spacer layer is obtained. Specifically, the porous insulating spacer layer slurry is covered on the porous electron transport layer of the first preform, and then the second hot-melt adhesive is uniformly covered on the porous insulating spacer layer, and a second hot-melt adhesive film is formed after drying; The second hot-melt adhesive film is removed to obtain a second preform with a porous insulating spacer layer.
  • the manner of removing the second hot-melt adhesive film is not particularly limited, and conventional methods in the art can be used.
  • the slurry for the porous insulating spacer layer can be covered on the porous electron transport layer of the first preform by techniques such as screen printing, slot coating, blade coating, ink jet printing, and spray deposition.
  • the porous insulating spacer layer paste is printed on the porous electron transport layer of the first preform using a screen printing technique. Screen printing technology can be achieved by curved screen printers.
  • the porous insulating spacer slurry may include insulating material, ethyl cellulose, and terpineol.
  • the slurry for the porous insulating spacer layer may also include glacial acetic acid.
  • the slurry of the porous insulating spacer layer can be prepared by ball milling dispersion by planetary ball mill, shear dispersion by high-speed shearing machine, dispersion by sand mill, rotation and revolution mixer, nano-grinding dispersion and other processes.
  • a step of vacuum defoaming may also be included.
  • the vacuum defoaming time can be 20-80 min; preferably 30-70 min; more preferably 40-50 min. This can improve the uniformity of film formation.
  • the insulating material may be selected from one of zirconia, silica, alumina or barium titanate.
  • the insulating material is zirconium dioxide.
  • the insulating material has a porous structure, and its pore diameter can be 10-500 nm; preferably 30-200 nm; more preferably 50-100 nm.
  • the grain size of the raw material with insulating function may be 10-500 nm; preferably 30-200 nm; more preferably 50-200 nm.
  • the viscosity of the ethyl cellulose may be 8 to 60 cP (centipoise), preferably 10 to 55 cP, more preferably 10 to 46 cP (centipoise).
  • the ethyl cellulose may be selected from one or more of ethyl cellulose with a viscosity of 10 cP, ethyl cellulose with a viscosity of 20 cP, ethyl cellulose with a viscosity of 46 cP, or ethyl cellulose with a viscosity of 55 cP.
  • the ethyl fibers are selected from one or more of ethyl cellulose having a viscosity of 10 cP or ethyl cellulose having a viscosity of 46 cP. More preferably, the ethyl cellulose is a mixture of ethyl cellulose having a viscosity of 10 cP and ethyl cellulose having a viscosity of 46 cP.
  • the mass ratio of ethyl cellulose with a viscosity of 10 cP and ethyl cellulose with a viscosity of 46 cP may be 1:0.01-1; preferably 1:0.3-1; more preferably 1:0.5-1. This can adjust the fluidity of the porous insulating spacer layer slurry and improve the uniformity of the porous insulating spacer layer.
  • the terpineol may be selected from one or more of alpha-terpineol, beta-terpineol or gamma-terpineol.
  • alpha-terpineol is included in the terpineol.
  • the terpineol is alpha-terpineol.
  • the dosage of ⁇ -terpineol in terpineol is 30wt% or more; preferably 80wt% or more; more preferably 90wt% or more.
  • the slurry prepared with ⁇ -terpineol is jelly-like at room temperature, but has good fluidity when the temperature is higher than 40 °C, which is beneficial to form a uniform porous insulating spacer layer on the curved conductive substrate.
  • the mass ratio of insulating material to ethyl cellulose may be 1:0.15-0.4; preferably 1:0.2-0.35; more preferably 1:0.25-0.3. In this way, the fluidity of the slurry of the porous insulating spacer layer can be improved, and the uniformity of the porous insulating spacer layer can be improved.
  • the mass ratio of insulating material to terpineol may be 1:2-6; preferably 1:2-5; more preferably 1:3-5. In this way, the fluidity of the slurry of the porous insulating spacer layer can be improved, and the uniformity of the porous insulating spacer layer can be improved.
  • the mass ratio of insulating material to glacial acetic acid may be 1:0.05-1; preferably 1:0.2-0.8; more preferably 1:0.3-0.6.
  • Glacial acetic acid can improve the dispersibility of the slurry and improve the stability of the slurry, thereby improving the uniformity of the porous insulating spacer layer.
  • the porous insulating spacer layer slurry on the porous electron transport layer of the first preform After covering the porous insulating spacer layer slurry on the porous electron transport layer of the first preform, let it stand at room temperature for 3 to 20 minutes, preferably 5 to 15 minutes, more preferably 10 to 15 minutes;
  • the slurry is coated with a first hot sol.
  • the first hot melt adhesive may be applied first, and then allowed to stand at room temperature.
  • the first hot melt adhesive can also be directly applied without standing. Standing can increase the flatness of the film surface, and the film without standing is rough.
  • the second hot melt adhesive can be selected from one of polyurethane hot melt adhesive, polyolefin elastomer, polyethersulfone resin, copolyamide, ethylene-acrylic acid copolymer, and ethylene-vinyl acetate copolymer hot melt adhesive.
  • the second hot melt adhesive is a polyurethane hot melt adhesive.
  • the second hot-melt adhesive is selected from HSL-U60 type hot-melt adhesive of Shenzhen Hengshenglong Plastic Products Co., Ltd., XJU-5C type hot-melt adhesive of Shanghai Xingxia Polymer Products Co., Ltd., Jiangsu Hehexin One of the LV368B-10-FQ type hot melt adhesives from Materials Co., Ltd.
  • the second hot-melt adhesive is XJU-5C type hot-melt adhesive from Shanghai Xingxia Polymer Products Co., Ltd.
  • the second hot-melt adhesive can fix the porous insulating spacer slurry on the curved conductive substrate, improve the uniformity of the porous insulating spacer layer, and is easy to remove after drying, and does not affect the performance of the perovskite solar cell.
  • Drying can be carried out in a vacuum drying oven.
  • the drying temperature may be 80-130°C; preferably 90-120°C; more preferably 90-110°C.
  • the drying time may be 5-20 min; preferably 10-20 min; more preferably 13-17 min.
  • the second hot-melt adhesive can be formed into a solid film, which is easy to remove, and the porous insulating spacer layer can be deposited on the curved conductive substrate.
  • the second preform with the porous insulating spacer layer is laser etched to form etched lines P2.
  • the etching line P2 is located on the left side of the etching line P1 and is tangent to the etching line P1.
  • the width of the etching line P2 may be 0.3-1 mm; preferably 0.4-0.7 mm; more preferably 0.4-0.6 mm.
  • the second preform with the porous insulating spacer layer is annealed or the second preform with the etch line P2 is annealed.
  • the annealing temperature may be 300-600°C; preferably 400-600°C; more preferably 450-550°C.
  • the annealing time may be 10-60 min; preferably 20-50 min; more preferably 20-40 min. This enhances the performance of the porous insulating spacer layer.
  • the porous back electrode layer slurry is covered on the porous insulating spacer layer of the second preform to form a porous back electrode layer, and a third preform having a porous back electrode layer is obtained.
  • the porous back electrode layer slurry is covered on the porous insulating spacer layer of the second preform, and after drying, the porous back electrode layer is formed to obtain the third preform having the porous back electrode layer.
  • the slurry for the porous back electrode layer can be covered on the porous insulating spacer layer of the second preform by techniques such as screen printing, slot coating, blade coating, ink jet printing, and spray deposition.
  • the porous back electrode layer paste is printed on the porous insulating spacer layer of the second preform using a screen printing technique. Screen printing technology can be achieved by curved screen printers.
  • the porous back electrode layer slurry may include a porous electrode material, zirconium dioxide, ethyl cellulose, and terpineol. In certain embodiments, the porous back electrode layer slurry may also include glacial acetic acid.
  • the slurry of the porous back electrode layer can be prepared by ball milling and dispersion with a planetary ball mill, shearing and dispersion with a high-speed shearing machine, dispersion with a sand mill, and nano-grinding and dispersion with an autorotation and revolution mixer.
  • the porous electrode material can be selected from one or more of graphite, carbon black, activated carbon, graphene, carbon nanotubes, fluorine-doped tin oxide, tin-doped indium oxide, and aluminum-doped zinc oxide.
  • the porous electrode material is a mixture of graphite and carbon black.
  • the mass ratio of graphite and carbon black may be 1:0.15-0.5; preferably 1:0.25-0.4; more preferably 1:0.3-0.35.
  • the particle size of the graphite may be 1-100 ⁇ m; preferably 5-50 ⁇ m; more preferably 10-20 ⁇ m.
  • Zirconium dioxide is zirconium dioxide powder.
  • the grain size of the zirconium dioxide may be 10-500 nm; preferably 30-200 nm; more preferably 100-200 nm.
  • the mass ratio of graphite to zirconium dioxide may be 1:0.1-0.5; preferably 1:0.1-0.3; more preferably 1:0.15-0.2.
  • Zirconium dioxide can strengthen and solidify, improve the quality of the film after sintering, and then improve the electrical properties and filling properties of the back electrode layer.
  • the viscosity of the ethyl cellulose may be 8 to 60 cP (centipoise), preferably 10 to 55 cP, more preferably 10 to 46 cP (centipoise).
  • the ethyl cellulose can be selected from one or more of ethyl cellulose with a viscosity of 10 cP, ethyl cellulose with a viscosity of 20 cP, ethyl cellulose with a viscosity of 46 cP, or ethyl cellulose with a viscosity of 55 cP.
  • the ethyl fibers are selected from one or more of ethyl cellulose having a viscosity of 10 cP or ethyl cellulose having a viscosity of 46 cP. More preferably, the ethyl cellulose is a mixture of ethyl cellulose having a viscosity of 10 cP and ethyl cellulose having a viscosity of 46 cP.
  • the mass ratio of ethyl cellulose with a viscosity of 10 cP and ethyl cellulose with a viscosity of 46 cP may be 1:0.01-3; preferably 1:0.05-2; more preferably 1:0.7-1.2.
  • the mass ratio of graphite to ethyl cellulose may be 1:0.1-0.5; preferably 1:0.1-0.3; more preferably 1:0.15-0.2.
  • the porous back electrode layer can be firmly deposited on the curved conductive substrate, the fluidity of the slurry of the porous back electrode layer can be adjusted, and the uniformity of the porous back electrode layer can be improved.
  • the terpineol can be selected from one or more of ⁇ -terpineol, ⁇ -terpineol or ⁇ -terpineol; preferably ⁇ -terpineol and ⁇ -terpineol.
  • the mass ratio of ⁇ -terpineol and ⁇ -terpineol may be 1:0.01-3; preferably 1:0.5-2; more preferably 1:0.8-1.3. This facilitates the formation of a uniform porous back electrode layer on the curved conductive substrate.
  • the mass ratio of graphite to terpineol can be 1:2-6; preferably 1:2-5; more preferably 1:3-5. In this way, the fluidity of the slurry of the porous back electrode layer can be improved, and the uniformity of the porous back electrode layer can be improved.
  • the mass ratio of graphite to glacial acetic acid can be 1:0.01-0.6; preferably 1:0.05-0.4; more preferably 1:0.1-0.2.
  • Glacial acetic acid can improve the dispersibility of the slurry, improve the stability of the slurry, and can improve the uniformity of the porous back electrode layer.
  • Drying can be carried out in a vacuum drying oven.
  • the drying temperature may be 80-130°C; preferably 90-120°C; more preferably 90-110°C.
  • the drying time may be 5-20 min; preferably 10-20 min; more preferably 13-17 min.
  • the third preform with the porous back electrode layer is laser etched to form etched lines P3.
  • the etching line P3 is located on the left side of the etching line P2 and is tangent to the etching line P2.
  • the width of the etching line P3 may be 0.05-0.3 mm; preferably 0.07-0.14 mm; more preferably 0.08-0.12 mm.
  • the third preform of the porous back electrode layer is annealed or the third preform with etch line P3 is annealed.
  • the annealing temperature may be 300-600°C; preferably 300-500°C; more preferably 350-450°C.
  • the annealing time may be 10-60 min; preferably 20-50 min; more preferably 20-40 min. This can enhance the mechanical properties of the porous mesoporous film to facilitate the filling of the perovskite precursor slurry.
  • the perovskite precursor slurry includes a compound having a perovskite structure and a solvent.
  • the compound with perovskite structure is shown in formula (I):
  • A is selected from alkylamines, formamidines or alkali metal-forming cations.
  • A is selected from cations formed from methylamine, formamidine, cesium or rubidium. More preferably, A is a cation formed from methylamine.
  • B is selected from lead or tin formed cations.
  • B is a lead-forming cation.
  • X is selected from iodine, bromine, chlorine or halogen-like anions. Examples of halogen-like species include, but are not limited to, cyanogen, thiocyanate, selenocyanide, oxycyanide, carbon azide disulfide.
  • X is an anion formed by iodine.
  • the compound having a perovskite structure is lead iodide methylamine (CH 3 NH 3 PbI 3 ).
  • the solvent may be selected from one or more of ⁇ -butyrolactone, N,N-dimethylformamide, N-methylformamide, methylpyrrolidone or dimethylsulfoxide.
  • the solvent is selected from one or more of ⁇ -butyrolactone, N,N-dimethylformamide, and N-methylformamide. More preferably, the solvent is gamma-butyrolactone.
  • the mass fraction of the solute in the perovskite precursor slurry may be 15-45 wt%; preferably 20-40 wt%; more preferably 25-35 wt%.
  • the perovskite precursor slurry may be applied on the porous back electrode layer of the third preform by dispensing. After the perovskite precursor slurry is filled into the porous structure of the porous electron transport layer, the porous insulating spacer layer and the porous back electrode layer, annealing is performed.
  • the annealing temperature may be 50 to 150°C; preferably 50 to 100°C; more preferably 50 to 70°C.
  • the annealing time can be 0.5-24h; preferably 1-12h; more preferably 6-12h.
  • a hot-melt adhesive film is covered on the porous back electrode layer of the printable curved perovskite solar cell, and then a flexible back sheet is placed, and the encapsulation of the printable curved perovskite solar cell is completed after vacuum lamination.
  • the flexible backplane layer can be a flexible functional film with waterproof and insulating function.
  • the hot melt adhesive film can be polyurethane hot melt adhesive or ethylene-vinyl acetate copolymer hot melt adhesive.
  • the thickness of the hot melt adhesive film can be 0.3 to 0.8 mm.
  • the vacuum lamination temperature may be 90 to 120°C.
  • the vacuum lamination time may be 5 to 15 minutes.
  • the present invention increases the viscosity of the slurry at room temperature by proportioning the type and dosage of terpineol and ethyl cellulose in the slurry, while maintaining the good fluidity of the slurry at the printing temperature, and improving the printing of curved films. controllability.
  • the surface is covered with hot melt adhesive to fix the printed curved film, which increases the uniformity of film formation.
  • the model of hot melt adhesive is XJU-5C, purchased from Shanghai Xingxia Polymer Products Co., Ltd.
  • the model of curved screen printing machine is ATMAOE67, purchased from Dongyuan Machinery Industry (Kunshan) Co., Ltd.
  • the model of the second laser etching machine is ET660, purchased from Wuhan Topyin Optoelectronics Technology Co., Ltd.
  • the model of femtosecond laser etching machine is ETG1370, purchased from Wuhan Yuanlu Optoelectronics Technology Co., Ltd.
  • the curved conductive substrate is made of curved transparent glass substrate and It is composed of a fluorine-doped tin oxide conductive layer deposited on a curved transparent glass substrate
  • the titanium dioxide puree model is NR-30, purchased from Greatcellsolar, Australia, the grain size of titanium dioxide is 30nm; the grain size of zirconium dioxide powder is 50nm .
  • the particle size of graphite was 15 ⁇
  • FIG. 2 is a schematic structural diagram of a printable curved perovskite solar cell of the present invention.
  • Printable curved perovskite solar cells have curved conductive substrates.
  • the curved conductive substrate includes a curved transparent substrate 1 and a conductive layer 2 deposited on the curved transparent substrate 1 .
  • the porous electron transport layer 3 , the porous insulating spacer layer 4 and the porous back electrode layer 5 are sequentially deposited on the conductive layer 2 from bottom to top.
  • the perovskite filler is filled in the pores of the porous electron transport layer 2 , the porous insulating spacer layer 3 and the porous back electrode layer 4 .
  • the fabrication method of the printable curved perovskite solar cells is as follows:
  • the cleaned curved conductive substrate was dried at 55° C. to obtain a clean curved conductive substrate. Place the clean curved conductive substrate on the profiling fixture and fix it by vacuum suction.
  • a nanosecond laser etching machine is used to laser-etch the conductive layer of the curved conductive substrate to form an etching line P1.
  • the width of the etching line P1 is 0.08 mm.
  • the curved conductive substrate with the etched line P1 was placed in deionized water, and ultrasonically cleaned for 15 minutes; then ultrasonically cleaned in ethanol for 5 minutes.
  • the cleaned curved conductive substrate with the etched line P1 was dried at 60° C. to make the surface free of moisture and speckle impurities.
  • the dried curved conductive substrate with the etching line P1 was treated with ultraviolet and ozone for 15 minutes.
  • the composition of the porous electron transport layer slurry is shown in Table 1.
  • the porous electron transport layer paste was printed on the conductive layer of the curved conductive substrate with the etched lines P1 using a screen flexographic printer.
  • the curved conductive substrate after printing the slurry of the porous electron transport layer was allowed to stand for 10 minutes at room temperature, and then the polyurethane hot-melt adhesive was evenly covered on the slurry of the porous electron transport layer, and then placed in a vacuum drying oven under vacuum at 100 ° C. Dry for 15 minutes. After the vacuum drying is completed, the polyurethane film is removed to obtain a first preform having a porous electron transport layer.
  • the first preform with the porous electron transport layer was annealed at 500 °C for 30 min.
  • the raw material of the porous insulating spacer layer slurry is uniformly dispersed by a planetary ball mill, and defoamed by vacuum for 45 minutes to obtain the porous insulating spacer layer slurry.
  • the composition of the porous insulating spacer layer paste is shown in Table 2.
  • the porous insulating spacer layer paste was printed on the porous electron transport layer of the first preform using a screen flexographic printer.
  • the first preform after printing the slurry for the porous insulating spacer was allowed to stand for 10 minutes at room temperature, and then the polyurethane hot-melt adhesive was evenly covered on the slurry for the porous insulating spacer, and then placed in a vacuum drying oven at 100°C. Vacuum dry for 15 min. After the vacuum drying is completed, the polyurethane film is removed to obtain a second preform having a porous insulating spacer layer.
  • the slurry of the porous back electrode layer is dispersed by a planetary ball mill, and the composition of the slurry of the porous back electrode layer is shown in Table 3.
  • the porous back electrode layer paste was printed on the porous insulating spacer layer of the second preform using a screen flexographic printer.
  • the second preform printed with the slurry of the porous back electrode layer was placed in a vacuum drying oven, and vacuum-dried at 100° C. for 15 minutes to obtain a third preform with a porous back electrode layer.
  • the third preform with the porous back electrode layer was annealed at 400° C. for 30 min and cooled to room temperature.
  • the lead iodine methylamine precursor slurry (the solvent is ⁇ -butyrolactone, the mass fraction of the solute is 30wt%) is applied on the porous back electrode layer by dispensing, and it penetrates into the porous electron transport layer, the porous insulating spacer layer and the pores of the porous back electrode layer.
  • the resulting product was annealed at 50 °C for 10 h to obtain a printable curved perovskite solar cell. The real thing is shown in Figure 1.
  • Example 2 The difference between Example 2 and Example 1 lies in steps (2) to (3). Details are as follows:
  • the cleaned curved conductive substrate was dried at 55° C. to obtain a clean curved conductive substrate. Place the clean curved conductive substrate on the profiling fixture and fix it by vacuum suction.
  • a nanosecond laser etching machine is used to laser-etch the conductive layer of the curved conductive substrate to form an etching line P1.
  • the width of the etching line P1 is 0.08 mm.
  • the curved conductive substrate with the etched line P1 was placed in deionized water, and ultrasonically cleaned for 15 minutes; then ultrasonically cleaned in ethanol for 5 minutes.
  • the cleaned curved conductive substrate with the etched line P1 was dried at 60° C. to make the surface free of moisture and speckle impurities.
  • the dried curved conductive substrate with the etching line P1 was treated with ultraviolet and ozone for 15 minutes.
  • the composition of the porous electron transport layer slurry is shown in Table 1.
  • the porous electron transport layer paste was printed on the conductive layer of the curved conductive substrate with the etched lines P1 using a screen flexographic printer.
  • the polyurethane hot-melt adhesive was uniformly covered on the slurry of the porous electron transport layer, then placed in a vacuum drying oven, and vacuum-dried at 100° C. for 15 min. After the vacuum drying is completed, the polyurethane film is removed to obtain a first preform having a porous electron transport layer.
  • the first preform with the porous electron transport layer was annealed at 500 °C for 30 min.
  • the raw material of the porous insulating spacer layer slurry is uniformly dispersed by a planetary ball mill, and defoamed by vacuum for 45 minutes to obtain the porous insulating spacer layer slurry.
  • the composition of the porous insulating spacer layer paste is shown in Table 2.
  • the porous insulating spacer layer paste was printed on the porous electron transport layer of the first preform using a screen flexographic printer.
  • the polyurethane hot-melt adhesive was evenly covered on the slurry of the porous insulating spacer layer, and then placed in a vacuum drying oven, and vacuum-dried at 100° C. for 15 min. After the vacuum drying is completed, the polyurethane film is removed to obtain a second preform having a porous insulating spacer layer.
  • the slurry of the porous back electrode layer is dispersed by a planetary ball mill, and the composition of the slurry of the porous back electrode layer is shown in Table 3.
  • the porous back electrode layer paste was printed on the porous insulating spacer layer of the second preform using a screen flexographic printer.
  • the second preform printed with the slurry of the porous back electrode layer was placed in a vacuum drying oven, and vacuum-dried at 100° C. for 15 minutes to obtain a third preform with a porous back electrode layer.
  • the third preform with the porous back electrode layer was annealed at 400° C. for 30 min and cooled to room temperature.
  • the lead iodine methylamine precursor slurry (the solvent is ⁇ -butyrolactone, the mass fraction of the solute is 30wt%) is applied on the porous back electrode layer by dispensing, and it penetrates into the porous electron transport layer, the porous insulating spacer layer and the pores of the porous back electrode layer.
  • the resulting product was annealed at 50 °C for 10 h to obtain a printable curved perovskite solar cell.
  • the viscosities of the porous electron transport layer slurry and the porous insulating spacer layer slurry are relatively low at room temperature.
  • the paste After printing the above-mentioned paste, if it is left to stand at room temperature, the paste will flow seriously due to the curved surface structure of the substrate, which is not conducive to the formation of the film. Therefore, in this embodiment, the step of leaving the paste at room temperature after printing the paste is omitted. This enables the production of printable curved solar cells.
  • the surface of the resulting film is relatively rough and has poor flatness.
  • Example 3 The difference between Example 3 and Example 1 lies in steps (3) to (4). Details are as follows:
  • the cleaned curved conductive substrate was dried at 55° C. to obtain a clean curved conductive substrate. Place the clean curved conductive substrate on the profiling fixture and fix it by vacuum suction.
  • a nanosecond laser etching machine is used to laser-etch the conductive layer of the curved conductive substrate to form an etching line P1.
  • the width of the etching line P1 is 0.08 mm.
  • the curved conductive substrate with the etched line P1 was placed in deionized water, and ultrasonically cleaned for 15 minutes; then ultrasonically cleaned in ethanol for 5 minutes.
  • the cleaned curved conductive substrate with the etched line P1 was dried at 60° C. to make the surface free of moisture and speckle impurities.
  • the dried curved conductive substrate with the etching line P1 was treated with ultraviolet and ozone for 15 minutes.
  • the composition of the porous electron transport layer slurry is shown in Table 1.
  • the porous electron transport layer paste was printed on the conductive layer of the curved conductive substrate with the etched lines P1 using a screen flexographic printer.
  • the curved conductive substrate after printing the slurry of the porous electron transport layer was allowed to stand for 10 minutes at room temperature, and then the polyurethane hot-melt adhesive was evenly covered on the slurry of the porous electron transport layer, and then placed in a vacuum drying oven under vacuum at 100 ° C. Dry for 15 minutes. After the vacuum drying is completed, the polyurethane film is removed to obtain a first preform having a porous electron transport layer.
  • the first preform with the porous electron transport layer was annealed at 500 °C for 30 min.
  • the raw material of the porous insulating spacer layer slurry is uniformly dispersed by a planetary ball mill, and defoamed by vacuum for 45 minutes to obtain the porous insulating spacer layer slurry.
  • the composition of the porous insulating spacer layer paste is shown in Table 2.
  • the porous insulating spacer layer paste was printed on the porous electron transport layer of the first preform using a screen flexographic printer.
  • the first preform after printing the slurry for the porous insulating spacer was allowed to stand for 10 minutes at room temperature, and then the polyurethane hot-melt adhesive was evenly covered on the slurry for the porous insulating spacer, and then placed in a vacuum drying oven at 100°C. Vacuum dry for 15 min.
  • the polyurethane film is removed to obtain a second preform having a porous insulating spacer layer.
  • the second preform is etched by a femtosecond laser etching machine to form an etching line P2.
  • the etching line P2 is located on the left side of the etching line P1 and is tangent to the etching line P1.
  • the width of the etching line P2 is 0.5mm.
  • the slurry of the porous back electrode layer is dispersed by a planetary ball mill, and the composition of the slurry of the porous back electrode layer is shown in Table 3.
  • the porous back electrode layer paste was printed on the porous insulating spacer layer of the second preform with etched lines P2 using a screen flexographic printer.
  • the second preform printed with the slurry of the porous back electrode layer was placed in a vacuum drying oven, vacuum dried at 100° C. for 15 min, and cooled to room temperature to obtain a third preform with a porous back electrode layer.
  • a femtosecond laser etching machine is used to etch the third preform to form an etching line P3.
  • the etching line P3 is located on the left side of the etching line P2 and is tangent to the etching line P2.
  • the width of the etching line P3 is 0.1mm.
  • the third preform with the etched line P3 was annealed at 400° C. for 30 min and cooled to room temperature.
  • the lead iodine methylamine precursor slurry (the solvent is ⁇ -butyrolactone, the mass fraction of the solute is 30wt%) is applied on the porous back electrode layer by dispensing, and it penetrates into the porous electron transport layer, the porous insulating spacer layer, and the pores of the porous back electrode layer, and then annealed at 50 °C for 10 h to obtain a printable curved perovskite solar cell.
  • Example 1 Example 2
  • Example 3 solvent Alpha-terpineol gamma-terpineol
  • Example 1 Example 2
  • Example 3 Zirconium dioxide powder/weight part 1 1 1 Ethyl cellulose (viscosity is 10cP)/weight part 0.2 -- 0.2 Ethyl cellulose (viscosity 46cP)/weight part 0.1 0.3 0.1
  • Example 1 Example 2
  • Example 3 Graphite powder 1 1 1 carbon black powder 0.3 0.35 0.3 Zirconium dioxide powder 0.15 0.2 0.15 Ethyl cellulose (viscosity is 10cP)/weight part 0.1 -- 0.1 Ethyl cellulose (viscosity 46cP)/weight part 0.05 0.15 0.05 Alpha-terpineol/weight part 2 -- 2 ⁇ -Terpineol/weight part 2 4 2 Glacial acetic acid/weight part 0.15 0.3 0.15
  • Comparative Example 1 The difference between Comparative Example 1 and Example 1 is that the step of uniformly covering the polyurethane hot-melt adhesive on the slurry of the porous electron transport layer is omitted. Details are as follows:
  • the cleaned curved conductive substrate was dried at 55° C. to obtain a clean curved conductive substrate. Place the clean curved conductive substrate on the profiling fixture and fix it by vacuum suction.
  • a nanosecond laser etching machine is used to laser-etch the conductive layer of the curved conductive substrate to form an etching line P1.
  • the width of the etching line P1 is 0.08 mm.
  • the curved conductive substrate with the etched line P1 was placed in deionized water, and ultrasonically cleaned for 15 minutes; then ultrasonically cleaned in ethanol for 5 minutes.
  • the cleaned curved conductive substrate with the etched line P1 was dried at 60° C. to make the surface free of moisture and speckle impurities.
  • the dried curved conductive substrate with the etching line P1 was treated with ultraviolet and ozone for 15 minutes.
  • the slurry viscosity of the porous electron transport layer decreased at 100°C. Since the conductive substrate is a curved surface, without the auxiliary fixation of the polyurethane film, the slurry flows seriously. After drying, it is impossible to form a thin film on the curved conductive substrate, and the first preform with a porous electron transport layer cannot be obtained, and the curved perovskite cannot be prepared. Mine solar cells.
  • the slurry of the porous electron transport layer is significantly affected by the temperature, and the viscosity of the slurry of the porous electron transport layer decreases as the temperature increases.
  • the viscosity of T10 is only 110cP, and the viscosity of T11 is about 510cP.
  • the fluidity of T10 and T11 can meet the conditions of curved printing, but the controllability of T11 is stronger, which is conducive to the uniformity of film formation.
  • the T10 viscosity is about 450 cP and the T11 viscosity is about 1800 cP.
  • the viscosity of T11 is significantly increased and the fluidity is significantly reduced, which is beneficial to the controllability of the film at room temperature, resulting in a more uniform film formation.
  • the porous insulating spacer layer slurry is significantly affected by temperature, and the viscosity of the porous insulating spacer layer slurry decreases as the temperature increases.
  • the viscosity of Z11 is about 50000cP, and its fluidity is much lower than that of Z10.
  • Z11 can not only meet the requirements of curved printing, but also improve the controllability of energy production.
  • the viscosity of Z11 is about 100000cP
  • the viscosity of Z10 is about 50000cP
  • the viscosity of Z11 is about twice that of Z10.
  • the film formed by Z11 has strong controllability, which is beneficial to increase the uniformity of film formation.
  • FIG. 5 is a three-dimensional topography diagram of the porous electron transport layer of Example 1
  • FIG. 6 is a three-dimensional topography diagram of the porous electron transport layer of Example 2.
  • the thickness of the porous electron transport layer of Example 1 is about 550 nm, the surface and surrounding are relatively flat, and the film uniformity is good.
  • the thickness of the porous electron transport layer in Example 2 is about 600 nm, the surface thickness fluctuates greatly, the slurry loss is serious at the edge position, and the film thickness is only 300 nm, which is more than 300 nm away from the central position.
  • the step meter measures the thickness of the porous electron transport layer. According to the film thickness data of the porous electron transport layer in the test surface, the three-dimensional profile and topography of the porous electron transport layer was drawn.
  • FIG. 7 is a three-dimensional topography diagram of the porous electron transport layer of Example 1
  • FIG. 8 is a three-dimensional topography diagram of the porous electron transport layer of Example 2.
  • the thickness of the porous insulating spacer layer of Example 1 is about 2.2 ⁇ m, the surface and surrounding are relatively flat, and the uniformity of the porous film is good.
  • the thickness of the porous insulating spacer layer in Example 2 fluctuates greatly, and the film thickness distribution in the test area is between 2.0 and 4.0 ⁇ m. This is mainly due to the good fluidity of the slurry, which causes the slurry to flow and aggregate.
  • the film thickness at the edge is 4.0 ⁇ m, and the film thickness at the center is 2.0 ⁇ m, and the thickness difference exceeds 2.0 ⁇ m.

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Abstract

本发明提供了一种可印刷曲面钙钛矿太阳能电池，其包括曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层和钙钛矿填充物；所述曲面导电基底包括曲面透明基底和沉积在曲面透明基底上的导电层；所述多孔电子传输层、多孔绝缘间隔层和多孔背电极层自下至上依次沉积在导电层上；所述钙钛矿填充物填充在多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中。该太阳电池便于与其他物品集成。本发明还提供了上述可印刷曲面钙钛矿太阳能电池的制备方法。

Description

可印刷曲面钙钛矿太阳能电池及其制备方法 技术领域
本发明涉及一种可印刷曲面钙钛矿太阳能电池，还涉及一种可印刷曲面钙钛矿太阳能电池的制备方法。
背景技术
随着社会的快速发展，人类对能源的需求不断增加，使得能源供给形式不断调整，逐渐从化石能源为主过渡到以电力能源为主。当前电气化设备与智能化设备日益普及，在给我们生活带来便利的同时，也对电力供应形式的多样化提出了更多的要求。发展便携式自发电电源对日常使用的各类电子终端产品有着极为重要的意义，可以有效弥补储能电源续航能力短的问题。由于太阳能取之不尽用之不竭且分布广泛，太阳能电池被认为是极具潜力的便携式自发电电源。
主流太阳能电池技术主要用于大型光伏发电站，实现规模化发电系统，便携式太阳能电池技术的发展相对较为落后。考虑到汽车电瓶亏电、手机电量用尽、野外活动对电力的迫切需求给我们带来的困扰，发展便携式太阳能电池技术十分重要，特别是将太阳电池与汽车车顶、手机外壳、便携式帐篷等进行集成，可以在特定时刻发挥重要作用，因而具有重要的发展前景，能够带来显著的经济效益。
当前主流的晶硅太阳能电池技术已经成熟，但在与其它设备进行集成、制作成便携式电源方面存在较大挑战，这主要受限于硅基材料自身的机械性能。有机太阳能电池技术在集成为便携式电源方面具有显著的技术优势，但有机太阳能电池光电转换效率欠佳，制约了其应用。钙钛矿材料兼具无机半导体材料和有机半导体材料优异的半导体性能与加工性能的优势，使得钙钛矿太阳能电池技术取得了快速发展。基于平面基底的钙钛矿太阳能电池的光电转换效率已突破至25.2％，因而，发展钙钛矿太阳能电池与其他设备的集成技术具有重要意义。
CN107146847A公开了一种碳对电极钙钛矿太阳能电池，自下而上包括透明导电基底、光阳极、绝缘层、第一碳层和第二碳层，第一碳层为多孔碳层，第二碳层为低温碳层。该钙钛矿太阳能电池的制备方法包括如下步骤：(1)在透明导电基底上制备一层致密层；(2)在致密层上通过丝网印刷依次制备一层TiO 2介孔层和一层ZrO 2绝缘层；(3)在绝缘层上制备多孔第一碳层；(4)将钙钛矿前驱体浆料滴至所述第一碳层表面，使其填充至致密层、TiO 2介孔层、ZrO 2绝缘层以及第一碳层各层的多孔薄膜层中；(5)在第一碳层上制备第二碳层。上述钙钛矿太阳能电池的基底为平板状。上述制备方法无法制备曲面钙钛矿太阳能电池。
CN108550705A公开了一种钙钛矿太阳能电池模块，包括导电基底、钙钛矿吸光层和对电极；在导电基底和钙钛矿吸光层之间设有空穴阻挡层、电子传输层和绝缘层；所述对电极和所述钙钛矿吸光层之间设有空穴传输层。该钙钛矿太阳能电池的制备方法包括如下步骤：在FTO玻璃基板上 制备TiO 2致密层；在致密层上丝网印刷二氧化钛浆料作为电子传输层，其中的溶剂为松油醇；在电子传输层上丝网印刷二氧化锆浆料，其中的溶剂为松油醇；配制CH 3NH 3PbI 3钙钛矿前驱体浆料溶剂为二甲亚砜和DMF，采用旋涂法制备钙钛矿吸光层；在钙钛矿吸光层上，丝网印刷碳浆料作为空穴传输层，其中的溶剂为松油醇，对电极由常温离型导电胶带形成，得到钙钛矿太阳能电池。上述钙钛矿太阳能电池需设置有空穴阻挡层和空穴传输层，且基底为平板状。上述制备方法无法制备曲面钙钛矿太阳能电池。
发明内容
本发明的一个目的在于提供一种可印刷曲面钙钛矿太阳能电池，其基底为曲面。这样的电池便于与其他物品集成，扩大了钙钛矿太阳能电池的使用范围。本发明的另一个目的在于提供一种可印刷曲面钙钛矿太阳能电池的制备方法，该方法能够制备得到曲面钙钛矿太阳能电池。进一步地，该方法所制得的曲面钙钛矿太阳能电池的各功能层均匀性高。
一方面，本发明提供了一种可印刷曲面钙钛矿太阳能电池，其包括曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层和钙钛矿填充物；
所述曲面导电基底包括曲面透明基底和沉积在曲面透明基底上的导电层；
所述多孔电子传输层、多孔绝缘间隔层和多孔背电极层自下至上依次沉积在导电层上；
所述钙钛矿填充物填充在多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中。
根据本发明的可印刷曲面钙钛矿太阳能电池，优选地，所述多孔电子传输层的厚度为300～1000nm，所述多孔绝缘间隔层的厚度为1～6μm，所述多孔背电极层的厚度为10～40μm。
另一方面，本发明提供了一种可印刷曲面钙钛矿太阳能电池的制备方法，包括如下步骤：
(1)将清洁的曲面导电基底激光刻蚀，形成刻蚀线P1；
(2)将多孔电子传输层浆料覆盖在具有刻蚀线P1的曲面导电基底的导电层上，然后将热熔胶覆盖在多孔电子传输层浆料上以形成第一热熔胶膜；将第一热熔胶膜取下后得到具有多孔电子传输层的第一预制品；
(3)将多孔绝缘间隔层浆料覆盖在第一预制品的多孔电子传输层上，然后将第二热熔胶覆盖在多孔绝缘间隔层浆料上以形成第二热熔胶膜；将第二热熔胶膜取下后得到具有多孔绝缘间隔层的第二预制品；
(4)将多孔背电极层浆料覆盖在第二预制品的多孔绝缘间隔层上以形成多孔背电极层，得到具有多孔背电极层的第三预制品；
(5)将钙钛矿前驱体浆料施加于第三预制品的多孔背电极层上，以使得钙钛矿前驱体浆料填充至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中，得到可印刷曲面钙钛矿太阳能电 池。
根据本发明的制备方法，优选地，第一热熔胶和第二热熔胶分别独立地选自聚氨酯、聚烯烃弹性体、聚醚砜树脂、共聚酰胺、乙烯-丙烯酸共聚物或乙烯-醋酸乙烯共聚物中的一种。
根据本发明的制备方法，优选地，所述多孔电子传输层浆料包括电子传输材料和松油醇，所述多孔电子传输层浆料中电子传输材料的固含量为2～10wt％；所述松油醇中含有α-松油醇，且所述α-松油醇在松油醇中的含量在30wt％以上；所述电子传输材料选自二氧化钛、二氧化锡、氧化锌或锡酸钡中的一种或多种。
根据本发明的制备方法，优选地，所述多孔绝缘间隔层浆料包括绝缘材料、乙基纤维素和松油醇；其中，绝缘材料与乙基纤维素的质量比为1:0.15～0.4，绝缘材料与松油醇的质量比为1:2～6；绝缘材料选自二氧化锆、二氧化硅、氧化铝或钛酸钡中的一种或多种；松油醇中含有α-松油醇，且所述α-松油醇在松油醇中的含量在30wt％以上；所述多孔背电极层浆料包括石墨、炭黑、二氧化锆、乙基纤维素和松油醇；所述石墨与炭黑的质量比为1:0.15～0.5，所述石墨与二氧化锆的质量比为1:0.1～0.5，所述石墨与乙基纤维素的质量比为1:0.1～0.5，所述石墨与松油醇的质量比为1:2～6。
根据本发明的制备方法，优选地，所述多孔绝缘间隔层浆料还包括冰醋酸，绝缘材料与冰醋酸的质量比为1:0.05～1；所述多孔背电极层浆料还包括冰醋酸，所述石墨与冰醋酸的质量比为1:0.01～0.6。
根据本发明的制备方法，优选地，还包括如下步骤：
将具有多孔电子传输层的第一预制品在300～600℃下退火10～60min，然后用于步骤(3)。
根据本发明的制备方法，优选地，还包括如下步骤：
在具有多孔绝缘间隔层的第二预制品上激光刻蚀以形成刻蚀线P2；
其中，所述刻蚀线P2位于所述刻蚀线P1的左侧，且与刻蚀线P1相切；所述刻蚀线P2的宽度为0.3～1mm。
根据本发明的制备方法，优选地，还包括如下步骤：
在具有多孔背电极层的第三预制品上激光刻蚀以形成刻蚀线P3，然后在300～600℃下退火10～60min；
其中，所述刻蚀线P3位于所述刻蚀线P2的左侧，且与刻蚀线P2相切，所述刻蚀线P3的宽度为0.05～0.3mm。
本发明的可印刷钙钛矿太阳能电池的基底为曲面，这样便于与其他物品集成(例如，汽车车顶、手机外壳、便携式帐篷等)，可以用于便携式太阳能电池，扩大了可印刷钙钛矿太阳能电池的使用范围。本发明在涂层浆料上覆盖热熔胶膜，这样能够将涂层浆料固定于曲面基底上，防止涂层浆料 沿着基底的弧度沉积，提高了各功能层的均匀性。根据本发明优选的技术方案，通过调控涂层浆料的组成，从而使涂层浆料具有合适的流动性，进一步提高各功能层的均匀性。
附图说明
图1为实施例1所得的可印刷曲面钙钛矿太阳能电池的实物图。
图2为本发明的一种可印刷曲面钙钛矿太阳能电池的结构示意图。
图3为实施例1和实施例2的多孔电子传输层浆料粘度随温度变化图。
图4为实施例1和实施例2的多孔绝缘间隔层浆料粘度随温度变化图。
图5(A)为实施例1的多孔电子传输层的三维轮廓形貌图的俯视图。
图5(B)为实施例1的多孔电子传输层的三维轮廓形貌图的正视图。
图6(A)为实施例2的多孔电子传输层的三维轮廓形貌图的俯视图。
图6(B)为实施例2的多孔电子传输层的三维轮廓形貌图的正视图。
图7(A)为实施例1的多绝缘间隔层的三维轮廓形貌图的俯视图。
图7(B)为实施例1的多绝缘间隔层的三维轮廓形貌图的正视图。
图8(A)为实施例2的多绝缘间隔层的三维轮廓形貌图的俯视图。
图8(B)为实施例2的多绝缘间隔层的三维轮廓形貌图的正视图。
附图标记详细如下：
1-曲面透明基底；2-导电层；3-多孔电子传输层；4-多孔绝缘间隔层；5-多孔背电极层。
具体实施方式
下面对本发明进行详细描述，但本发明不限于此。
＜可印刷曲面钙钛矿太阳能电池＞
如图1所示，本发明的可印刷曲面钙钛矿太阳能电池的基底具有一定的弧度。这不同于现有的以平面材料作为基底的可印刷钙钛矿太阳能电池。由于其基底具有一定的弧度，极大地增加了印刷湿膜的流动性，给钙钛矿太阳能电池的制备造成了极大的困难。虽然可印刷平面钙钛矿太阳能电池已经被广泛应用，但是可印刷曲面钙钛矿太阳能电池尚未有报道。
本发明的可印刷曲面钙钛矿太阳能电池包括曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层和钙钛矿填充物。实际上，多孔电子传输层、多孔绝缘间隔层、多孔背电极层也为曲面结构。钙钛矿填充物填充在多孔电子传输层、多孔绝缘间隔层、多孔背电极层的空隙中。本发明的可印刷钙钛矿太阳能电池还可以包括封装层。在某些实施方式中，可印刷曲面钙钛矿太阳能电池 由曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层和钙钛矿填充物组成。在另一些实施方式中，可印刷曲面钙钛矿太阳能电池由曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层、钙钛矿填充物和封装层组成。
曲面导电基底
本发明的曲面导电基底可以包括曲面透明基底和导电层。导电层可以沉积在曲面透明基底上。优选地，本发明的曲面导电基底由曲面透明基底和沉积在曲面透明基底上的导电层组成。所谓“曲面”是指一条动线在空间连续运动所形成的轨迹。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。
曲面透明基底可以为透明玻璃或透明聚合物。透明聚合物的实例包括但不限于聚氯乙烯、聚甲基丙烯酸甲酯、聚碳酸酯、聚苯乙烯、聚乙烯、乙烯-醋酸乙烯共聚物。根据本发明的一个实施方式，曲面透明基底为透明玻璃。
导电层可以由掺氟氧化锡、掺锡氧化铟、掺铝氧化锌、石墨烯、透明金属导电薄膜等形成。根据本发明的一个实施方式，导电层由掺氟氧化锡形成。
多孔电子传输层
本发明的多孔电子传输层可以沉积在导电层上。多孔电子传输层也可以为曲面。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。
多孔电子传输层可以由二氧化钛、二氧化锡、氧化锌或锡酸钡形成。根据本发明的一个实施方式，所述多孔电子传输层由二氧化钛形成。多孔电子传输层的厚度可以为300～1000nm；优选为400～800nm；更优选为500～600nm。多孔电子传输层的孔径可以为2～100nm；优选为15～50nm；更优选为25～35nm。多孔电子传输层的晶粒尺寸可以为10～50nm；优选为15～35nm；更优选为25～35nm。
多孔绝缘间隔层
本发明的多孔绝缘间隔层可以沉积在多孔电子传输层上。多孔绝缘间隔层也可以为曲面。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。
多孔绝缘间隔层可以由二氧化锆、二氧化硅、氧化铝或钛酸钡形成。根据本发明的一个实施方 式，多孔绝缘间隔层由二氧化锆形成。多孔绝缘间隔层的厚度可以为1～6μm；优选为2～5μm；更优选为3～4μm。多孔电子传输层的孔径可以为10～500nm；优选为30～200nm；更优选为50～100nm。多孔绝缘间隔层的晶粒尺寸可以为10～500nm；优选为30～200nm；更优选为100～200nm。
多孔背电极层
本发明的多孔背电极层可以沉积在多孔绝缘间隔层上。多孔背电极层也为曲面。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。
多孔背电极层可以由包括多孔电极材料的原料形成。多孔电极材料可以为多孔碳电极材料或多孔导电氧化物电极材料。多孔碳电极材料的实例包括但不限于石墨、炭黑、活性炭、石墨烯、碳纳米管。多孔导电氧化电极材料包括但不限于掺氟氧化锡、掺锡氧化铟、掺铝氧化锌。根据本发明的一个实施方式，多孔背电极层由石墨、炭黑和氧化锆形成。石墨与炭黑的质量比可以为1:0.15～0.5；优选为1:0.25～0.4；更优选为1:0.3～0.35。石墨与二氧化锆的质量比可以为1:0.1～0.5；优选为1:0.1～0.3；更优选为1:0.15～0.2。这样能够达到更好的固化和强化的效果，从而提高膜的质量，进而提升膜的电学性能和填充性能。
多孔背电极层的厚度可以为10～50μm；优选为15～40μm；更优选为20～30μm。多孔背电极石墨片的尺寸可以为1～100μm；优选为5～50μm；更优选为10～20μm。
钙钛矿填充物
本发明的钙钛矿填充物填充在多孔电子传输层、多孔绝缘间隔层和多孔背板电极层的孔隙中。钙钛矿填充物为具有如式(I)所示结构的化合物。
ABX 3    (I)
其中，A选自烷基胺、甲脒或碱金属形成的阳离子；优选地，A选自甲胺、甲脒、铯或铷形成的阳离子。更优选地，A为甲胺形成的阳离子。B选自铅或锡形成的阳离子。优选地，B为铅形成的阳离子。X选自碘、溴、氯或类卤素形成的阴离子。类卤素的实例包括但不限于，氰、硫氰、硒氰、氧氰、叠氮二硫化碳。优选地，X为碘离子。根据本发明的一个实施方式，具有钙钛矿结构的化合物为碘铅甲胺(CH 3NH 3PbI 3)。
封装层
本发明的封装层可以包括热熔胶膜和柔性背板。热熔胶膜覆盖在多孔背电极层上。柔性背板覆盖在热熔胶膜上。本发明的热熔胶膜可以由聚氨酯或乙烯-醋酸乙烯共聚物形成。热熔胶膜也可以为曲面。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、 椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。本发明的柔性背板可以为具有防水绝缘作用的柔性功能膜。柔性背板也可以为曲面。本发明的曲面可以为直纹曲面也可以为双曲曲面。直纹曲面包括但不限于圆柱面、圆锥面、椭圆柱面、椭圆锥面、锥状面或柱状面中的一种。双曲曲面包括但不限于球面、环面。根据本发明的一个实施方式曲面为圆柱面。
＜制备方法＞
本发明的曲面钙钛矿太阳能电池的制备方法包括如下步骤：(1)形成刻蚀线P1的步骤；(2)形成多孔电子传输层的步骤；(3)形成多孔绝缘间隔层的步骤；(4)形成多孔背电极层的步骤；(5)填充钙钛矿的步骤。任选地，本发明的制备方法还包括(6)封装步骤。在本发明中，多孔电子传输层、多孔绝缘间隔层、多孔背电极层可以分别进行退火处理，也可以将其中两层一起进行退火处理，还可以三层一起进行退火处理。下面进行详细描述。
形成刻蚀线P1的步骤
将清洁的曲面导电基底激光刻蚀，形成刻蚀线P1。
激光刻蚀之前，曲面导电基底需要进行清洁处理。清洁的曲面导电基底指去除表面污渍后的曲面导电基底。将曲面导电基底置于清洗剂中超声清洗，然后再置于乙醇中清洗，将清洗后在曲面导电基底烘干，得到清洁的曲面导电基底。清洁剂可以选自威露士、威猛先生、洁士奇、LOPO、净安、白猫、立白、Kleen MCT511和
Figure PCTCN2020137186-appb-000001
III清洗液中的一种或多种；优选地，清洗剂选自净安、白猫、立白、Kleen MCT511和
Figure PCTCN2020137186-appb-000002
III清洗液中的一种或多种；更优选为
Figure PCTCN2020137186-appb-000003
III清洗液。清洗剂中超声清洗的时间可以为5～30min；优选为10～25min；更优选为15～20min。在乙醇中超声清洗的时间可以为1～20min；优选为3～15min；更优选为3～10min。烘干温度可以为50～80℃；优选为55～75℃；更优选为55～60℃。这样能够使曲面导电基底上的污渍去除更彻底。
可以采用纳秒激光刻蚀机对曲面导电基底激光刻蚀，形成刻蚀线P1。刻蚀线P1的宽度可以为0.02～0.15mm；优选为0.03～0.1mm；更优选为0.05～0.1mm。
将具有刻蚀线P1的曲面导电基底进行清洗。具体地，将具有刻蚀线P1的曲面导电基底置于去离子水中超声清洗，然后再置于乙醇中超声清洗。将清洗后的曲面导电基底烘干至其表面无水分和斑点杂质。在去离子水中超声清洗的时间可以为5～30min；优选为10～25min；更优选为15～20min。在乙醇中超声清洗的时间可以为1～20min；优选为3～15min；更优选为3～10min。烘干温度可以为50～80℃；优选为55～75℃；更优选为60～70℃。这样确保待沉积部位的清洁度以确保后续步骤的顺利进行。
将清洗后的具有刻蚀线P1的曲面导电基底采用紫外和臭氧进行处理。处理时间可以为5～ 30min；优选为10～20min；更优选为10～15min。紫外和臭氧可以清洗曲面导电基底表面的有机物，改善曲面导电基底表面的浸润性。
形成多孔电子传输层的步骤
将多孔电子传输层浆料覆盖在具有刻蚀线P1的曲面导电基底的导电层上，然后将热熔胶覆盖在多孔电子传输层浆料上以形成第一热熔胶膜；将第一热熔胶膜取下后得到具有多孔电子传输层的第一预制品。具体地，在具有刻蚀线P1的曲面导电基底的导电层上均匀覆盖多孔电子传输层浆料，然后将第一热熔胶均匀覆在多孔电子传输层浆料上，经过干燥得到第一热熔胶膜，将第一热熔胶膜取下，得到具有多孔电子传输层的第一预制品。取下第一热熔胶膜的方式并没有特别限制，可以采用本领域的常规的方法。
多孔电子传输层浆料可以采用丝网印刷、狭缝涂布、刮涂、喷墨打印、喷雾沉积等技术覆盖在具有刻蚀线P1的曲面导电基底的导电层上。根据本发明的一个实施方式，采用丝网印刷技术将多孔电子传输层浆料印刷在具有刻蚀线P1的曲面导电基底的导电层上。丝网印刷技术可以通过曲面丝网印刷机实现。
多孔电子传输层浆料可以包括电子传输材料和松油醇。电子传输材料可以选自二氧化钛、二氧化锡、氧化锌或锡酸钡中的一种。优选地，电子传输材料为二氧化钛。电子传输材料的孔径可以为2～50nm；优选为15～35nm；更优选为25～35nm。电子传输材料的晶粒尺寸可以为10～40nm；优选为15～35nm；更优选为25～35nm。松油醇可以选自α-松油醇、β-松油醇或γ-松油醇中的一种或多种。优选地，松油醇中包含α-松油醇。更优选地，松油醇为α-松油醇。α-松油醇在松油醇中的用量为30wt％以上；优选为80wt％以上；更优选为90wt％以上。α-松油醇配制的浆料在室温下呈果冻状，但当温度大于40℃时具有良好的流动性，这样有利于在曲面导电基底上形成均匀的多孔电子传输层。根据本发明的一个实施方式，多孔电子传输层浆料包括二氧化钛和α-松油醇。二氧化钛可以由二氧化钛原浆提供。二氧化钛原浆可以购买自Greatcellsolar公司。优选地，二氧化钛原浆选自Greatcellsolar公司的NR-18或NR30。根据本发明的一个实施方式，二氧化钛原浆为购买自Greatcellsolar公司型号为NR-30的二氧化钛原浆。多孔电子传输层浆料中电子传输材料的固含量可以为2～10wt％；优选为3～7wt％；更优选为4～5wt％。
多孔电子传输层浆料采用混合的方式进行配置。优选地，混合后还包括真空除泡的步骤。真空除泡的时间可以为20～80min；优选为30～70min；更优选为40～50min。这样可以提高成膜的均匀性。
将多孔电子传输层浆料覆盖在具有刻蚀线P1的曲面导电基底的导电层上后，可以先在室温静置3～20min，优选为5～15min，更优选为10～15min；然后在多孔电子传输层浆料上涂覆第一热溶胶。 也可以先涂覆第一热熔胶，再在室温下静置。此外，还可以不经室温下静置直接涂覆第一热熔胶。静置可以增加薄膜表面的平坦度，未经静置的薄膜较为粗糙。
第一热熔胶可以选自聚氨酯热熔胶、聚烯烃弹性体、聚醚砜树脂、共聚酰胺、乙烯-丙烯酸共聚物、乙烯-醋酸乙烯共聚物热熔胶中的一种。优选地，第一热熔胶为聚氨酯热熔胶。更优选地，第一热熔胶选自深圳市恒升龙胶制品有限公司的HSL-U60型热熔胶、上海星霞高分子制品有限公司的XJU-5C型热熔胶、江苏和和新材料股份有限公司的LV368B-10-FQ型热熔胶中的一种。根据本发明的一个实施方式，第一热熔胶为上海星霞高分子制品有限公司的XJU-5C型热熔胶。第一热熔胶能够将多孔电子传输层浆料辅助固定于曲面导电基底上，提高多孔电子传输层的均匀性，干燥后便于取下，且不会影响钙钛矿太阳能电池的性能。
干燥可以在真空干燥箱中进行。干燥温度可以为80～130℃；优选为90～120℃；更优选为90～110℃。干燥时间可以为5～20min；优选为10～20min；更优选为13～17min。这样能够将热熔胶形成固态薄膜便于取下，且能够将多孔电子传输层沉积于曲面导电基底上。
在某些实施方案中，具有多孔电子传输层的第一预制品进行退火。退火温度可以为300～600℃；优选为400～600℃；更优选为450～550℃。退火时间可以为10～60min；优选为20～50min；更优选为20～40min。这样可以增强多孔电子传输层的性能。
形成多孔绝缘间隔层的步骤
将多孔绝缘间隔层浆料覆盖在第一预制品的多孔电子传输层上，然后将第二热熔胶覆盖在多孔绝缘间隔层浆料上以形成第二热熔胶膜；将第二热熔胶膜取下后得到具有多孔绝缘间隔层的第二预制品。具体的，在第一预制品的多孔电子传输层上覆盖多孔绝缘间隔层浆料，然后将第二热熔胶均匀覆盖在多孔绝缘间隔层上，干燥后形成第二热熔胶膜；将第二热熔胶膜取下，得到具有多孔绝缘间隔层的第二预制品。取下第二热熔胶膜的方式并没有特别限制，可以采用本领域的常规的方法。
多孔绝缘间隔层浆料可以采用丝网印刷、狭缝涂布、刮涂、喷墨打印、喷雾沉积等技术覆盖在第一预制品的多孔电子传输层上。根据本发明的一个实施方式，采用丝网印刷技术将多孔绝缘间隔层浆料印刷在第一预制品的多孔电子传输层上。丝网印刷技术可以通过曲面丝网印刷机实现。
多孔绝缘间隔层浆料可以包括绝缘材料、乙基纤维素和松油醇。在某些实施方式中，多孔绝缘间隔层的浆料还可以包括冰醋酸。多孔绝缘间隔层浆料可以采用行星球磨机球磨分散、高速剪切机剪切分散、砂磨机分散、自转公转搅拌机、纳米粉碎分散等工艺制备而成。此外，还可以包括真空除泡的步骤。真空除泡的时间可以为20～80min；优选为30～70min；更优选为40～50min。这样可以提高成膜的均匀性。
绝缘材料可以选自二氧化锆、二氧化硅、氧化铝或钛酸钡中的一种。优选地，绝缘材料为二氧 化锆。绝缘材料具有多孔结构，其孔径可以为10～500nm；优选为30～200nm；更优选为50～100nm。具有绝缘功能的原料的晶粒尺寸可以为10～500nm；优选为30～200nm；更优选为50～200nm。
乙基纤维素的粘度可以为8～60cP(厘泊)，优选为10～55cP，更优选为10～46cP(厘泊)。乙基纤维素可以选自粘度为10cP的乙基纤维素、粘度为20cP的乙基纤维素、粘度为46cP的乙基纤维素或粘度为55cP的乙基纤维素中的一种或多种。优选地，乙基纤维选自粘度为10cP的乙基纤维素或粘度为46cP的乙基纤维素的一种或多种。更优选地，乙基纤维素为粘度为10cP的乙基纤维素和粘度为46cP的乙基纤维素的混合物。粘度为10cP的乙基纤维素和粘度为46cP的乙基纤维素的质量比可以为1:0.01～1；优选为1:0.3～1；更优选为1:0.5～1。这样够调节多孔绝缘间隔层浆料的流动性，提高多孔绝缘间隔层的均匀性。
松油醇可以选自α-松油醇、β-松油醇或γ-松油醇中的一种或多种。优选地，松油醇中包含α-松油醇。更优选地，松油醇为α-松油醇。α-松油醇在松油醇中的用量为30wt％以上；优选为80wt％以上；更优选为90wt％以上。α-松油醇配制的浆料在室温下呈果冻状，但当温度大于40℃时具有良好的流动性，这样有利于在曲面导电基底上形成均匀的多孔绝缘间隔层。
绝缘材料与乙基纤维素的质量比可以为1:0.15～0.4；优选为1:0.2～0.35；更优选为1:0.25～0.3。这样能够改善多孔绝缘间隔层浆料的流动性，提高多孔绝缘间隔层的均匀性。
绝缘材料与松油醇的质量比可以为1:2～6；优选为1:2～5；更优选为1:3～5。这样能够改善多孔绝缘间隔层浆料的流动性，提高多孔绝缘间隔层的均匀性。
绝缘材料与冰醋酸的质量比可以为1:0.05～1；优选为1:0.2～0.8；更优选为1:0.3～0.6。冰醋酸能够改善浆料的分散性，提高浆料的稳定性，从而能够提高多孔绝缘间隔层的均匀性。
将多孔绝缘间隔层浆料覆盖在第一预制品的多孔电子传输层上后，先在室温静置3～20min，优选为5～15min，更优选为10～15min；然后再在多孔电子传输层浆料上涂覆第一热溶胶。也可以先涂覆第一热熔胶，再在室温下静置。或者，还可以不经静置直接涂覆第一热熔胶。静置可以增加薄膜表面的平坦度，未经静置的薄膜较为粗糙。第二热熔胶可以选自聚氨酯热熔胶、、聚烯烃弹性体、聚醚砜树脂、共聚酰胺、乙烯-丙烯酸共聚物、乙烯-醋酸乙烯共聚物热熔胶中的一种。优选地，第二热熔胶为聚氨酯热熔胶。更优选地，第二热熔胶选自深圳市恒升龙胶制品有限公司的HSL-U60型热熔胶、上海星霞高分子制品有限公司的XJU-5C型热熔胶、江苏和和新材料股份有限公司的LV368B-10-FQ型热熔胶中的一种。根据本发明的一个实施方式，第二热熔胶为上海星霞高分子制品有限公司的XJU-5C型热熔胶。第二热熔胶能够将多孔绝缘间隔浆料固定于曲面导电基底上，提高多孔绝缘间隔层的均匀性，干燥后便于取下，且不会影响钙钛矿太阳能电池的性能。
干燥可以在真空干燥箱中进行。干燥温度可以为80～130℃；优选为90～120℃；更优选为90～110℃。干燥时间可以为5～20min；优选为10～20min；更优选为13～17min。这样能够将第二热熔胶形成固态薄膜便于取下，且能够将多孔绝缘间隔层沉积于曲面导电基底上。
在某些实施方案中，在具有多孔绝缘间隔层的第二预制品上激光刻蚀以形成刻蚀线P2。刻蚀线P2位于刻蚀线P1的左侧且与刻蚀线P1相切。刻蚀线P2的宽度可以为0.3～1mm；优选为0.4～0.7mm；更优选为0.4～0.6mm。
在某些实施方案中，对具有多孔绝缘间隔层的第二预制品进行退火或者对具有刻蚀线P2的第二预制品进行退火。退火温度可以为300～600℃；优选为400～600℃；更优选为450～550℃。退火时间可以为10～60min；优选为20～50min；更优选为20～40min。这样可以增强多孔绝缘间隔层的性能。
形成多孔背电极层的步骤
将多孔背电极层浆料覆盖在第二预制品的多孔绝缘间隔层上以形成多孔背电极层，得到具有多孔背电极层的第三预制品。具体地，将多孔背电极层浆料覆盖在第二预制品的多孔绝缘间隔层上，干燥后形成多孔背电极层，得到具有多孔背电极层的第三预制品。
多孔背电极层浆料可以采用丝网印刷、狭缝涂布、刮涂、喷墨打印、喷雾沉积等技术覆盖在第二预制品的多孔绝缘间隔层上。根据本发明的一个实施方式，采用丝网印刷技术将多孔背电极层浆料印刷在第二预制品的多孔绝缘间隔层上。丝网印刷技术可以通过曲面丝网印刷机实现。
多孔背电极层浆料可以包括具有多孔电极材料、二氧化锆、乙基纤维素和松油醇。在某些实施方式中，多孔背电极层浆料还可以包括冰醋酸。多孔背电极层浆料可以采用行星球磨机球磨分散、高速剪切机剪切分散、砂磨机分散、自转公转搅拌机纳米粉碎分散等工艺制备而成。
多孔电极材料可以选自石墨、炭黑、活性炭、石墨烯、碳纳米管、掺氟氧化锡、掺锡氧化铟、掺铝氧化锌中的一种或多种。根据本发明的一个实施方式，多孔电极材料为石墨和炭黑的混合物。石墨和炭黑的质量比可以为1:0.15～0.5；优选为1:0.25～0.4；更优选为1:0.3～0.35。石墨的粒径可以为1～100μm；优选为5～50μm；更优选为10～20μm。
二氧化锆为二氧化锆粉体。二氧化锆的晶粒尺寸可以为10～500nm；优选为30～200nm；更优选为100～200nm。石墨与二氧化锆的质量比可以为1:0.1～0.5；优选为1:0.1～0.3；更优选为1:0.15～0.2。二氧化锆能够起到强化和固化的作用，改善烧结后膜的质量，进而提高背电极层的电学性能和填充性能。
乙基纤维素的粘度可以为8～60cP(厘泊)，优选为10～55cP，更优选为10～46cP(厘泊)。乙基纤维素可以选自粘度为10cP的乙基纤维素、粘度为20cP的乙基纤维素、粘度为46cP的乙基纤维素 或粘度为55cP的乙基纤维素中的一种或多种。优选地，乙基纤维选自粘度为10cP的乙基纤维素或粘度为46cP的乙基纤维素的一种或多种。更优选地，乙基纤维素为粘度为10cP的乙基纤维素和粘度为46cP的乙基纤维素的混合物。粘度为10cP的乙基纤维素和粘度为46cP的乙基纤维素的质量比可以为1:0.01～3；优选为1:0.05～2；更优选为1:0.7～1.2。石墨与乙基纤维素的质量比可以为1:0.1～0.5；优选为1:0.1～0.3；更优选为1:0.15～0.2。这样既能够使多孔背电极层牢固地沉积在曲面导电基底上，还能够调节多孔背电极层浆料的流动性，提高多孔背电极层的均匀性。
松油醇可以选自α-松油醇、β-松油醇或γ-松油醇中的一种或多种；优选为α-松油醇和γ-松油醇。α-松油醇和γ-松油醇的质量比可以为1:0.01～3；优选为1:0.5～2；更优选为1:0.8～1.3。这样有利于在曲面导电基底上形成均匀的多孔背电极层。石墨与松油醇的质量比可以为1:2～6；优选为1:2～5；更优选为1:3～5。这样能够改善多孔背电极层浆料的流动性，提高多孔背电极层的均匀性。
石墨与冰醋酸的质量比可以为1:0.01～0.6；优选为1:0.05～0.4；更优选为1:0.1～0.2。冰醋酸能够改善浆料的分散性，提高浆料的稳定性，从能能够提高多孔背电极层的均匀性。
干燥可以在真空干燥箱中进行。干燥温度可以为80～130℃；优选为90～120℃；更优选为90～110℃。干燥的时间可以为5～20min；优选为10～20min；更优选为13～17min。
在某些实施方案中，在具有多孔背电极层的第三预制品上激光刻蚀以形成刻蚀线P3。刻蚀线P3位于刻蚀线P2的左侧且与刻蚀线P2相切。刻蚀线P3的宽度可以为0.05～0.3mm；优选为0.07～0.14mm；更优选为0.08～0.12mm。
在某些实施方案中，对多孔背电极层的第三预制品进行退火或者对具有刻蚀线P3的第三预制品进行退火。退火温度可以为300～600℃；优选为300～500℃；更优选为350～450℃。退火时间可以为10～60min；优选为20～50min；更优选为20～40min。这样可以增强多孔介孔膜的机械性能，以利于钙钛矿前驱体浆料的填充。
填充钙钛矿的步骤
将钙钛矿前驱体浆料施加于第三预制品的多孔背电极层上，以使得钙钛矿前驱体浆料填充至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中，得到可印刷曲面钙钛矿太阳能电池。
钙钛矿前驱体浆料包括具有钙钛矿结构的化合物和溶剂。具有钙钛矿结构的化合物如式(I)所示：
ABX 3(I)。
A选自烷基胺、甲脒或碱金属形成的阳离子。优选地，A选自甲胺、甲脒、铯或铷形成的阳离子。更优选地，A为甲胺形成的阳离子。B选自铅或锡形成的阳离子。优选地，B为铅形成的阳离子。X选自碘、溴、氯或类卤素形成的阴离子。类卤素的实例包括但不限于，氰、硫氰、硒氰、氧氰、 叠氮二硫化碳。优选地，X为碘形成的阴离子。根据本发明的一个实施方式，具有钙钛矿结构的化合物为碘铅甲胺(CH 3NH 3PbI 3)。溶剂可以选自γ-丁内酯、N,N-二甲基甲酰胺、N-甲基甲酰胺、甲基吡咯烷酮或二甲亚砜中的一种或多种。优选地，溶剂选自γ-丁内酯、N,N-二甲基甲酰胺、N-甲基甲酰胺中的一种或多种。更优选地，溶剂为γ-丁内酯。钙钛矿前驱体浆料中溶质的质量分数可以为15～45wt％；优选为20～40wt％；更优选为25～35wt％。
可以采用点胶的方式将钙钛矿前驱体浆料施加于第三预制品的多孔背电极层上。待钙钛矿前驱体浆料填充至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的多孔结构中后，进行退火。退火温度可以为50～150℃；优选为50～100℃；更优选为50～70℃。退火时间可以为0.5～24h；优选为1～12h；更优选为6～12h。
封装的步骤
在可印刷曲面钙钛矿太阳能电池的多孔背电极层上覆盖热熔胶膜，然后放置柔性背板，真空层压后完成可印刷曲面钙钛矿太阳能电池的封装。柔性背板层可以为具有防水绝缘作用的柔性功能膜。热熔胶膜可以为聚氨酯热熔胶或乙烯-醋酸乙烯共聚物热熔胶。热熔胶膜涂膜厚度可以为0.3～0.8mm。真空层压温度可以为90～120℃。真空层压时间可以为5～15min。
本发明通过对浆料中松油醇和乙基纤维素的型号与用量的配比，增大了浆料在室温的粘度，同时保持了浆料在印刷温度下良好的流动性，提高了曲面薄膜印刷的可控性。采用表面覆盖热熔胶的方式固定印刷后的曲面薄膜，增加了成膜的均匀性。
以下通过具体实施例对本发明的实施方式做进一步说明。
以下实施例和对比例中热熔胶型号为XJU-5C，购买自上海星霞高分子制品有限公司；曲面丝网印刷机型号为ATMAOE67，购买自东远机械工业(昆山)有限公司；纳秒激光刻蚀机型号为ET660，购买自武汉拓普银光电技术有限公司；飞秒激光刻蚀机型号为ETG1370，购买自武汉元禄光电技术有限公司；曲面导电基底由曲面透明玻璃基底和沉积在曲面透明玻璃基底上的掺氟氧化锡导电层组成；二氧化钛原浆型号为NR-30，购买自澳大利亚Greatcellsolar公司，二氧化钛的晶粒尺寸为30nm；二氧化锆粉体的晶粒尺寸为50nm。石墨的粒径为15μm。
实施例1
图2为本发明的一种可印刷曲面钙钛矿太阳能电池的结构示意图。可印刷曲面钙钛矿太阳能电池具有曲面导电基底。曲面导电基底包括曲面透明基底1和沉积在曲面透明基底1上的导电层2。多孔电子传输层3、多孔绝缘间隔层4和多孔背电极层5自下至上依次沉积在导电层2上。钙钛矿填充物填充在多孔电子传输层2、多孔绝缘间隔层3和多孔背电极层4的孔隙中。可印刷曲面钙钛矿太阳能电池的制备方法如下：
(1)将曲面导电基底放置在
Figure PCTCN2020137186-appb-000004
III清洗剂中，超声清洗15min；然后在乙醇中超声清洗10min。将清洗后的曲面导电基底在55℃下烘干，得到清洁的曲面导电基底。将清洁的曲面导电基底放置于仿形治具上，利用真空吸附固定。采用纳秒激光刻蚀机对曲面导电基底的导电层激光刻蚀，形成刻蚀线P1。刻蚀线P1的宽度为0.08mm。将具有刻蚀线P1的曲面导电基底放置于去离子水中，超声清洗15min；然后在乙醇中超声清洗5min。将清洗后的具有刻蚀线P1的曲面导电基底在60℃下烘干，使其表面无水分和斑点杂质。将烘干后的具有刻蚀线P1的曲面导电基底采用紫外和臭氧处理15min。
(2)将多孔电子传输层浆料的原料混合，真空除泡45min，得到多孔电子传输层浆料。多孔电子传输层浆料的组成如表1所示。采用丝网曲面印刷机在具有刻蚀线P1的曲面导电基底的导电层上印刷多孔电子传输层浆料。将印刷多孔电子传输层浆料后的曲面导电基底在室温下静置10min，再将聚氨酯热熔胶均匀覆盖在多孔电子传输层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔电子传输层的第一预制品。将具有多孔电子传输层的第一预制品在500℃下退火30min。
(3)将多孔绝缘间隔层浆料的原料采用行星球磨机分散均匀，真空除泡45min，得到多孔绝缘间隔层浆料。多孔绝缘间隔层浆料的组成如表2所示。采用丝网曲面印刷机在第一预制品的多孔电子传输层上印刷多孔绝缘间隔层浆料。将印刷多孔绝缘间隔层浆料后的第一预制品在室温下静置10min，再将聚氨酯热熔胶均匀覆盖在多孔绝缘间隔层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔绝缘间隔层的第二预制品。
(4)多孔背电极层浆料采用行星球磨机分散而成，多孔背电极层浆料的组成如表3所示。采用丝网曲面印刷机在第二预制品的多孔绝缘间隔层上印刷多孔背电极层浆料。将印刷有多孔背电极层浆料的第二预制品放置于真空干燥箱中，在100℃下真空干燥15min，得到具有多孔背电极层的第三预制品。将具有多孔背电极层的第三预制品在400℃下退火30min，冷却至室温。
(5)采用点胶的方式将碘铅甲胺前驱体浆料(溶剂为γ-丁内酯，溶质的质量分数为30wt％)施加在多孔背电极层上，并使其渗透至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中。所得产物在50℃退火10h，得到可印刷曲面钙钛矿太阳能电池。实物如图1所示。
(6)在可印刷曲面钙钛矿太阳能电池的多孔背电极层上覆盖聚氨酯膜(涂膜厚度为0.5mm)，放置柔性背板，然后在110℃下层压15min，完成可印刷曲面钙钛矿太阳能电池的封装。
实施例2
实施例2与实施例1的区别在于步骤(2)～步骤(3)。详情如下：
(1)将曲面导电基底放置在
Figure PCTCN2020137186-appb-000005
III清洗剂中，超声清洗15min；然后在乙醇中超声清洗10min。将清洗后的曲面导电基底在55℃下烘干，得到清洁的曲面导电基底。将清洁的曲面导电基底放置于仿形治具上，利用真空吸附固定。采用纳秒激光刻蚀机对曲面导电基底的导电层激光刻蚀，形成刻蚀线P1。刻蚀线P1的宽度为0.08mm。将具有刻蚀线P1的曲面导电基底放置于去离子水中，超声清洗15min；然后在乙醇中超声清洗5min。将清洗后的具有刻蚀线P1的曲面导电基底在60℃下烘干，使其表面无水分和斑点杂质。将烘干后的具有刻蚀线P1的曲面导电基底采用紫外和臭氧处理15min。
(2)将多孔电子传输层浆料的原料混合，真空除泡45min，得到多孔电子传输层浆料。多孔电子传输层浆料的组成如表1所示。采用丝网曲面印刷机在具有刻蚀线P1的曲面导电基底的导电层上印刷多孔电子传输层浆料。将聚氨酯热熔胶均匀覆盖在多孔电子传输层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔电子传输层的第一预制品。将具有多孔电子传输层的第一预制品在500℃下退火30min。
(3)将多孔绝缘间隔层浆料的原料采用行星球磨机分散均匀，真空除泡45min，得到多孔绝缘间隔层浆料。多孔绝缘间隔层浆料的组成如表2所示。采用丝网曲面印刷机在第一预制品的多孔电子传输层上印刷多孔绝缘间隔层浆料。将聚氨酯热熔胶均匀覆盖在多孔绝缘间隔层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔绝缘间隔层的第二预制品。
(4)多孔背电极层浆料采用行星球磨机分散而成，多孔背电极层浆料的组成如表3所示。采用丝网曲面印刷机在第二预制品的多孔绝缘间隔层上印刷多孔背电极层浆料。将印刷有多孔背电极层浆料的第二预制品放置于真空干燥箱中，在100℃下真空干燥15min，得到具有多孔背电极层的第三预制品。将具有多孔背电极层的第三预制品在400℃下退火30min，冷却至室温。
(5)采用点胶的方式将碘铅甲胺前驱体浆料(溶剂为γ-丁内酯，溶质的质量分数为30wt％)施加在多孔背电极层上，并使其渗透至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中。所得产物在50℃退火10h，得到可印刷曲面钙钛矿太阳能电池。
(6)在可印刷曲面钙钛矿太阳能电池的多孔背电极层上覆盖聚氨酯膜(涂膜厚度为0.5mm)，放置柔性背板，然后在110℃下层压15min，完成可印刷曲面钙钛矿太阳能电池的封装。
本实施例中，多孔电子传输层浆料和多孔绝缘间隔层浆料在室温下的粘度较低。印刷上述浆料后，如果在室温中静置，由于基底为曲面结构，浆料流淌严重，这不利于薄膜的形成。因此，本实施例省略了印刷上述浆料后室温静置的步骤。这样能够制得可印刷曲面太阳能电池。但是，所得薄 膜表面会比较粗糙，平整度不好。
实施例3
实施例3与实施例1的区别在于步骤(3)～步骤(4)。详情如下：
(1)将曲面导电基底放置在
Figure PCTCN2020137186-appb-000006
III清洗剂中，超声清洗15min；然后在乙醇中超声清洗10min。将清洗后的曲面导电基底在55℃下烘干，得到清洁的曲面导电基底。将清洁的曲面导电基底放置于仿形治具上，利用真空吸附固定。采用纳秒激光刻蚀机对曲面导电基底的导电层激光刻蚀，形成刻蚀线P1。刻蚀线P1的宽度为0.08mm。将具有刻蚀线P1的曲面导电基底放置于去离子水中，超声清洗15min；然后在乙醇中超声清洗5min。将清洗后的具有刻蚀线P1的曲面导电基底在60℃下烘干，使其表面无水分和斑点杂质。将烘干后的具有刻蚀线P1的曲面导电基底采用紫外和臭氧处理15min。
(2)将多孔电子传输层浆料的原料混合，真空除泡45min，得到多孔电子传输层浆料。多孔电子传输层浆料的组成如表1所示。采用丝网曲面印刷机在具有刻蚀线P1的曲面导电基底的导电层上印刷多孔电子传输层浆料。将印刷多孔电子传输层浆料后的曲面导电基底在室温下静置10min，再将聚氨酯热熔胶均匀覆盖在多孔电子传输层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔电子传输层的第一预制品。将具有多孔电子传输层的第一预制品在500℃下退火30min。
(3)将多孔绝缘间隔层浆料的原料采用行星球磨机分散均匀，真空除泡45min，得到多孔绝缘间隔层浆料。多孔绝缘间隔层浆料的组成如表2所示。采用丝网曲面印刷机在第一预制品的多孔电子传输层上印刷多孔绝缘间隔层浆料。将印刷多孔绝缘间隔层浆料后的第一预制品在室温下静置10min，再将聚氨酯热熔胶均匀覆盖在多孔绝缘间隔层浆料上，然后放置于真空干燥箱中，在100℃下真空干燥15min。真空干燥完成后，将聚氨酯膜取下，得到具有多孔绝缘间隔层的第二预制品。采用飞秒激光刻蚀机在第二预制品上刻蚀，形成刻蚀线P2，刻蚀线P2位于刻蚀线P1的左侧且与刻蚀线P1相切，刻蚀线P2的宽度为0.5mm。
(4)多孔背电极层浆料采用行星球磨机分散而成，多孔背电极层浆料的组成如表3所示。采用丝网曲面印刷机在具有刻蚀线P2的第二预制品的多孔绝缘间隔层上印刷多孔背电极层浆料。将印刷有多孔背电极层浆料的第二预制品放置于真空干燥箱中，在100℃下真空干燥15min，冷却至室温，得到具有多孔背电极层的第三预制品。采用飞秒激光刻蚀机在第三预制品上刻蚀，形成刻蚀线P3，刻蚀线P3位于刻蚀线P2的左侧且与刻蚀线P2相切，刻蚀线P3的宽度为0.1mm。将具有刻蚀线P3的第三预制品在400℃下退火30min，冷却至室温。
(5)采用点胶的方式将碘铅甲胺前驱体浆料(溶剂为γ-丁内酯，溶质的质量分数为30wt％)施加在多孔背电极层上，并使其渗透至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中，然后在50℃退火10h，得到可印刷曲面钙钛矿太阳能电池。
(6)在可印刷曲面钙钛矿太阳能电池的多孔背电极层上覆盖聚氨酯膜(涂膜厚度为0.5mm)，放置柔性背板，然后在110℃下层压15min，完成可印刷曲面钙钛矿太阳能电池的封装。
表1
  实施例1 实施例2 实施例3
溶剂 α-松油醇 γ-松油醇 α-松油醇
二氧化钛固含量/wt％ 4.5 4.5 4.5
表2
  实施例1 实施例2 实施例3
二氧化锆粉体/重量份 1 1 1
乙基纤维素(粘度为10cP)/重量份 0.2 -- 0.2
乙基纤维素(粘度为46cP)/重量份 0.1 0.3 0.1
α-松油醇/重量份 4 -- 4
γ-松油醇/重量份 -- 4 --
冰醋酸/重量份 0.5 1 0.5
表3
  实施例1 实施例2 实施例3
石墨粉体 1 1 1
炭黑粉体 0.3 0.35 0.3
二氧化锆粉体 0.15 0.2 0.15
乙基纤维素(粘度为10cP)/重量份 0.1 -- 0.1
乙基纤维素(粘度为46cP)/重量份 0.05 0.15 0.05
α-松油醇/重量份 2 -- 2
γ-松油醇/重量份 2 4 2
冰醋酸/重量份 0.15 0.3 0.15
对比例1
对比例1与实施例1的区别在于省略将聚氨酯热熔胶均匀覆盖在多孔电子传输层浆料上的步骤。详情如下：
(1)将曲面导电基底放置在
Figure PCTCN2020137186-appb-000007
III清洗剂中，超声清洗15min；然后在乙醇中超声清洗10min。将清洗后的曲面导电基底在55℃下烘干，得到清洁的曲面导电基底。将清洁的曲面导电基底放置于仿形治具上，利用真空吸附固定。采用纳秒激光刻蚀机对曲面导电基底的导电层激光刻蚀，形成刻蚀线P1。刻蚀线P1的宽度为0.08mm。将具有刻蚀线P1的曲面导电基底放置于去离子水中，超声清洗15min；然后在乙醇中超声清洗5min。将清洗后的具有刻蚀线P1的曲面导电基底在60℃下烘干，使其表面无水分和斑点杂质。将烘干后的具有刻蚀线P1的曲面导电基底采用紫外和臭氧处理15min。
(2)将多孔电子传输层浆料的原料混合，真空除泡45min，得到多孔电子传输层浆料。多孔电子传输层浆料的组成如表1所示。采用丝网曲面印刷机在具有刻蚀线P1的曲面导电基底的导电层上印刷多孔电子传输层浆料。将印刷多孔电子传输层浆料后的曲面导电基底在室温下静置10min，然后放置于真空干燥箱中，在100℃下真空干燥15min。
多孔电子传输层浆料在100℃下浆料粘度降低。由于导电基底为曲面，没有聚氨酯膜的辅助固定，浆料流淌严重，经过干燥后已经无法在曲面导电基底上形成薄膜，无法得到具有多孔电子传输层的第一预制品，进而无法制备曲面钙钛矿太阳能电池。
实验例
1.1浆料的粘度测试
采用美国博勒飞Brookfield DV2TLV型粘度计对浆料在18～40℃下的粘度进行测试。所的结果如图3和图4所示。
T11代表实施例1的多孔电子传输层浆料；T10代表将实施例2的多孔电子传输层浆料；Z11代表实施例1的多孔绝缘间隔层浆料；Z10代表实施例2的多孔绝缘间隔层浆料。
由图3可知，多孔电子传输层浆料受温度影响较为显著，温度升高，多孔电子传输层浆料粘度下降。当温度上升至40℃，T10粘度仅为110cP，T11粘度约为510cP，T10和T11的流动性均能满足曲面印刷条件，但T11的可控性更强，有利于成膜的均匀性。在室温(25℃)下，T10粘度约为450cP，T11粘度约为1800cP。T11粘度显著增大，流动性显著降低，这有利于薄膜在室温下的可控性，从而使成膜更加均匀。
由图4可知，多孔绝缘间隔层浆料受温度影响较为显著，温度升高，多孔绝缘间隔层浆料粘度下降。当温度上升至38℃时，Z11的粘度约为50000cP，其流动性远低于Z10，Z11既能满足曲面印刷的要求，又能够提高能成的可控性。在室温(25℃)下，Z11粘度约为100000cP，Z10粘度约为50000cP，Z11粘度约为Z10粘度的两倍，Z11所形成的薄膜可控性能强，有利于增加成膜的均匀性。
1.2多孔电子传输层膜厚度测试
将第一预制品冷却至室温，在第一预制品的表面选取10cm×10cm区域，采用飞秒激光刻蚀机在选取区域内刻蚀出十字交叉的刻蚀网络，然后采用德国布鲁克探针式台阶仪(型号为Dektak XT)测试多孔电子传输层的厚度。根据测试曲面内多孔电子传输层膜厚度数据，绘制多孔电子传输层三维轮廓形貌图。
图5为实施例1的多孔电子传输层的三维轮廓形貌图，图6为实施例2的多孔电子传输层的三维轮廓形貌图。
由图5和图6可知，实施例1的多孔电子传输层的厚度约为550nm，表面及四周较为平整，薄膜均匀度好。实施例2的多孔电子传输层的厚度大约为600nm，表面厚度起伏较大，边缘位置浆料流失严重，膜厚仅为300nm，与中心位置相差超过300nm。
1.3多孔绝缘间隔层膜厚度测试
将第二预制品冷却至室温，在第二预制品的表面选取10cm×10cm区域，采用飞秒激光刻蚀机在选取区域内刻蚀出十字交叉的刻蚀网络，然后采用德国布鲁克探针式台阶仪测试多孔电子传输层的厚度。根据测试曲面内多孔电子传输层膜厚度数据，绘制多孔电子传输层三维轮廓形貌图。
图7为实施例1的多孔电子传输层的三维轮廓形貌图，图8为实施例2的多孔电子传输层的三维轮廓形貌图。
由图7和图8可知，实施例1的多孔绝缘间隔层的厚度约为2.2μm，表面及四周较为平整，多孔薄膜均匀度好。实施例2的多孔绝缘间隔层厚度起伏较大，测试区域内膜厚分布介于2.0～4.0μm。这主要是由浆料流动性较好，造成浆料流动聚集所致，边缘薄膜厚度4.0μm，中心位置膜厚2.0μm，厚度相差超过2.0μm。
本发明并不限于上述实施方式，在不背离本发明的实质内容的情况下，本领域技术人员可以想到的任何变形、改进、替换均落入本发明的范围。

Claims (10)

  1. 一种可印刷曲面钙钛矿太阳能电池，其特征在于，包括曲面导电基底、多孔电子传输层、多孔绝缘间隔层、多孔背电极层和钙钛矿填充物；
    所述曲面导电基底包括曲面透明基底和沉积在曲面透明基底上的导电层；
    所述多孔电子传输层、多孔绝缘间隔层和多孔背电极层自下至上依次沉积在导电层上；
    所述钙钛矿填充物填充在多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中。
  2. 根据权利要求1所述的可印刷曲面钙钛矿太阳能电池，其特征在于，所述多孔电子传输层的厚度为300～1000nm，所述多孔绝缘间隔层的厚度为1～6μm，所述多孔背电极层的厚度为10～40μm。
  3. 一种权利要求1或2所述的可印刷曲面钙钛矿太阳能电池的制备方法，其特征在于，包括如下步骤：
    (1)将清洁的曲面导电基底激光刻蚀，形成刻蚀线P1；
    (2)将多孔电子传输层浆料覆盖在具有刻蚀线P1的曲面导电基底的导电层上，然后将热熔胶覆盖在多孔电子传输层浆料上以形成第一热熔胶膜；将第一热熔胶膜取下后得到具有多孔电子传输层的第一预制品；
    (3)将多孔绝缘间隔层浆料覆盖在第一预制品的多孔电子传输层上，然后将第二热熔胶覆盖在多孔绝缘间隔层浆料上以形成第二热熔胶膜；将第二热熔胶膜取下后得到具有多孔绝缘间隔层的第二预制品；
    (4)将多孔背电极层浆料覆盖在第二预制品的多孔绝缘间隔层上以形成多孔背电极层，得到具有多孔背电极层的第三预制品；
    (5)将钙钛矿前驱体浆料施加于第三预制品的多孔背电极层上，以使得钙钛矿前驱体浆料填充至多孔电子传输层、多孔绝缘间隔层和多孔背电极层的孔隙中，得到可印刷曲面钙钛矿太阳能电池。
  4. 根据权利要求3所述的制备方法，其特征在于，第一热熔胶和第二热熔胶分别独立地选自聚氨酯、聚烯烃弹性体、聚醚砜树脂、共聚酰胺、乙烯-丙烯酸共聚物或乙烯-醋酸乙烯共聚物中的一种。
  5. 根据权利要求3所述的制备方法，其特征在于，所述多孔电子传输层浆料包括电子传输材料和松油醇，所述多孔电子传输层浆料中电子传输材料的固含量为2～10wt％；
    所述松油醇中含有α-松油醇，且所述α-松油醇在松油醇中的含量在30wt％以上；
    所述电子传输材料选自二氧化钛、二氧化锡、氧化锌或锡酸钡中的一种或多种。
  6. 根据权利要求3所述的制备方法，其特征在于：
    所述多孔绝缘间隔层浆料包括绝缘材料、乙基纤维素和松油醇；其中，绝缘材料与乙基纤维素的质量比为1:0.15～0.4，绝缘材料与松油醇的质量比为1:2～6；绝缘材料选自二氧化锆、二氧化硅、氧化铝或钛酸钡中的一种或多种；松油醇中含有α-松油醇，且所述α-松油醇在松油醇中的含量在30wt％以上；
    所述多孔背电极层浆料包括石墨、炭黑、二氧化锆、乙基纤维素和松油醇；所述石墨与炭黑的质量比为1:0.15～0.5，所述石墨与二氧化锆的质量比为1:0.1～0.5，所述石墨与乙基纤维素的质量比为1:0.1～0.5，所述石墨与松油醇的质量比为1:2～6。
  7. 根据权利要求6所述的制备方法，其特征在于：
    所述多孔绝缘间隔层浆料还包括冰醋酸，绝缘材料与冰醋酸的质量比为1:0.05～1；
    所述多孔背电极层浆料还包括冰醋酸，所述石墨与冰醋酸的质量比为1:0.01～0.6。
  8. 根据权利要求3所述的制备方法，其特征在于，还包括如下步骤：
    将具有多孔电子传输层的第一预制品在300～600℃下退火10～60min，然后用于步骤(3)。
  9. 根据权利要求3所述的制备方法，其特征在于，还包括如下步骤：
    在具有多孔绝缘间隔层的第二预制品上激光刻蚀以形成刻蚀线P2；
    其中，所述刻蚀线P2位于所述刻蚀线P1的左侧，且与刻蚀线P1相切；所述刻蚀线P2的宽度为0.3～1mm。
  10. 根据权利要求9所述的制备方法，其特征在于，还包括如下步骤：
    在具有多孔背电极层的第三预制品上激光刻蚀以形成刻蚀线P3，然后在300～600℃下退火10～60min；
    其中，所述刻蚀线P3位于所述刻蚀线P2的左侧，且与刻蚀线P2相切，所述刻蚀线P3的宽度为0.05～0.3mm。
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