WO2020135739A1 - 钙钛矿薄膜太阳能组件及其制备方法 - Google Patents

钙钛矿薄膜太阳能组件及其制备方法 Download PDF

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WO2020135739A1
WO2020135739A1 PCT/CN2019/129280 CN2019129280W WO2020135739A1 WO 2020135739 A1 WO2020135739 A1 WO 2020135739A1 CN 2019129280 W CN2019129280 W CN 2019129280W WO 2020135739 A1 WO2020135739 A1 WO 2020135739A1
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layer
transport layer
transparent conductive
electron transport
photoactive
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PCT/CN2019/129280
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English (en)
French (fr)
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沈承焕
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蜂巢能源科技有限公司
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Priority to KR1020217022431A priority Critical patent/KR102577149B1/ko
Priority to EP19903299.6A priority patent/EP3896750A4/en
Priority to JP2021538414A priority patent/JP7418443B2/ja
Priority to US17/309,889 priority patent/US20220044878A1/en
Publication of WO2020135739A1 publication Critical patent/WO2020135739A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2022—Light-sensitive devices characterized by he counter electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the field of photovoltaic devices, in particular to a perovskite solar module and a preparation method thereof.
  • Perovskite solar cells are a type of solar cell that is rapidly developing at present, and has the characteristics of high efficiency, low cost, and simple preparation. Perovskite solar cells are divided into plane structure and mesoporous structure according to the structure, mainly including transparent electrode, electron transport layer, perovskite light absorbing material, hole transport layer, counter electrode and so on. The perovskite material absorbs light and generates photogenerated electrons and holes, which are transmitted to the electron transport layer and the hole transport layer, respectively, connected to an external circuit to form a loop, and output electrical energy.
  • the present invention aims to propose a perovskite solar module and a preparation method thereof.
  • the perovskite solar module can effectively solve the problem of shunt caused by the direct contact between the photoactive layer and the electrode, and significantly improve the performance of the perovskite solar module.
  • the invention proposes a perovskite solar module.
  • the perovskite solar module includes: a substrate; a transparent conductive oxide layer provided on at least a part of the surface of the substrate; an electron transport layer provided on the electron transport layer At least a part of the surface of the transparent conductive oxide layer away from the substrate; a photoactive layer provided on at least a part of the surface of the electron transport layer away from the transparent conductive oxide layer; a hole transport layer , The hole transport layer is provided on at least a part of the surface of the photoactive layer away from the electron transport layer; an electrode, the electrode is provided on at least a part of the surface of the hole transport layer away from the photoactive layer; The electrode has a protrusion, and the protrusion passes through the hole transport layer, the photoactive layer, and the electron transport layer and is connected to the transparent conductive oxide layer; and a barrier layer, the barrier layer is provided In the photoactive layer and space the photoactive layer from the protru
  • the perovskite solar module of the above embodiment of the present invention has at least the following advantages:
  • the barrier layer in the photoactive layer, can be used to separate the photoactive layer from the electrode to prevent photogenerated electrons or holes generated in the photoactive layer from flowing into the metal electrode. Thereby improving the performance of perovskite solar modules.
  • the barrier layer is used to isolate the photoactive layer from the electrode, which can also avoid the adverse effects of degradation or damage to the photoactive layer caused by chemical reactions that may occur during laser or physical scribing.
  • the barrier layer can be formed at the same time as the photoactive layer is formed, and the preparation method is simple.
  • a first scribe area is formed in the transparent conductive oxide layer, a part of the electron transport layer is provided in the first scribe area; or, the transparent conductive oxide layer and the electron A first scribe area is formed in the transmission layer, and a part of the barrier layer is provided in the first scribe area.
  • the photoactive layer is formed of perovskite
  • the barrier layer is formed of at least one of a halide-based material, an oxide-based material, a nitride-based material, and a carbide-based material.
  • the band gap of the barrier layer is larger than the band gap of the photoactive layer.
  • the band gap of the barrier layer is not less than 2.5 eV, and the band gap of the photoactive layer is 1.5 to 1.8 eV.
  • the perovskite solar module further includes: a second scribing area, the second scribing area is located in the electron transport layer, the photoactive layer, the hole transport layer, and the blocking layer, The protrusion of the electrode is provided in the second scribe area.
  • the present invention provides a method for preparing the above-mentioned perovskite solar module.
  • the method includes: (1) forming a transparent conductive oxide layer on a substrate, and forming a first scribed region in the transparent conductive oxide layer by scribing, after the transparent conductive Forming an electron transport layer on the oxide layer; (2) forming a barrier layer and a photoactive layer on the electron transport layer; (3) forming a hole transport layer on the barrier layer and the photoactive layer; (4) An electrode is provided on the hole transport layer.
  • the barrier layer material and the photoactive layer material are further applied on the electron transport layer, and by making the barrier layer
  • the material and/or the photoactive layer material undergo a selective phase change to obtain a barrier layer and a photoactive layer.
  • the perovskite solar module of the above embodiment is obtained. Compared with the traditional preparation process of the perovskite solar module, this method does not need to increase the number of steps too much. Using this method, the perovskite solar module of the above embodiment can be obtained simply and efficiently.
  • step (1) after the transparent conductive oxide layer and the electron transport layer are sequentially formed on the substrate, a first scribing is formed in the transparent conductive oxide layer and the electron transport layer by scribing area.
  • step (2) a barrier layer and a photoactive layer are simultaneously formed on the electron transport layer.
  • the method further includes: forming a second scribed region in the electron transport layer, the hole transport layer, and the barrier layer by scoring, and then locating the hole An electrode is provided on the transmission layer, and the protrusion of the electrode is provided in the second scribe area.
  • FIG. 1 is a schematic structural view of a perovskite solar module according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a perovskite solar module according to yet another embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a perovskite solar module according to yet another embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a perovskite solar module according to yet another embodiment of the present invention.
  • FIG. 5 is a schematic flowchart of a method for preparing a perovskite solar module according to an embodiment of the present invention
  • FIG. 6 is a schematic flowchart of a method for preparing a perovskite solar module according to yet another embodiment of the present invention.
  • FIG. 7 is a schematic diagram of a method for coating a barrier layer material and a photoactive layer material using an extrusion coater according to an embodiment of the present invention
  • FIG. 8 is a schematic diagram of another perspective of a method for coating a barrier layer material and a photoactive layer material using an extrusion coater according to an embodiment of the present invention
  • FIG. 9 is a schematic flowchart of a method of forming a barrier layer and a photoactive layer according to an embodiment of the present invention.
  • FIG. 10 is a schematic flowchart of a method for forming a barrier layer and a photoactive layer according to yet another embodiment of the present invention.
  • 100 substrate; 200: transparent conductive oxide layer; 300: electron transport layer;
  • 500 hole transport layer
  • 600 electrode
  • 610 protrusion
  • barrier layer 700: barrier layer
  • halide-based material 710: halide-based material
  • 720 oxide-based material, nitride-based material or carbide-based material
  • 810 first scribe area
  • 820 second scribe area
  • 830 third scribe area
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may include at least one of the features explicitly or implicitly.
  • the meaning of “plurality” is at least two, such as two, three, etc., unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed”, etc. should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection, Or integrated; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediary, may be the connection between two elements or the interaction between two elements, unless otherwise specified limited.
  • installation can be a fixed connection or a detachable connection, Or integrated; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediary, may be the connection between two elements or the interaction between two elements, unless otherwise specified limited.
  • the first feature is "on” or “below” the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly through an intermediary contact.
  • the first feature is “above”, “above” and “above” the second feature may be that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • the invention proposes a perovskite solar module.
  • the perovskite solar module includes: a substrate 100, a transparent conductive oxide layer 200, an electron transport layer 300, a photoactive layer 400, a hole transport layer 500, an electrode 600 and Barrier layer 700.
  • the transparent conductive oxide layer 200 is provided on at least a part of the surface of the substrate 100; the electron transport layer 300 is provided on at least a part of the surface of the transparent conductive oxide layer 200 away from the substrate 100; the photoactive layer 400 is provided on the electron transport layer 300 away from the transparent conductive At least a part of the surface of the oxide layer 200; the hole transport layer 500 is provided on at least a part of the surface of the photoactive layer 400 away from the electron transport layer 300; the electrode 600 is provided on at least a part of the surface of the hole transport layer 500 away from the photoactive layer 400; The electrode 600 has a protrusion 610 which passes through the hole transport layer 500, the light active layer 400 and the electron transport layer 300 and is connected to the transparent conductive oxide layer 200; the barrier layer 700 is provided in the light active layer 400 and The photoactive layer 400 is spaced from the protrusion 610 of the electrode 600.
  • the perovskite solar module according to the embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 4.
  • the transparent conductive oxide layer 200 may be formed on the substrate 100 first, and then the transparent conductive oxide layer 200 may be scribed to obtain the first scribe Engraved area (Scheme 1); You can also form a transparent conductive oxide layer 200 and an electron transport layer 300 on the substrate 100, and then scribe the transparent conductive oxide layer 200 and the electron transport layer 300 to obtain the first scribed area (Option II). Therefore, in the first solution above, the first scribe region is formed in the transparent conductive oxide layer 200, and further, when the electron transport layer 300 is further formed on the transparent conductive oxide layer 200, a part of the electron transport layer 300 is formed In the first scribing area, as shown in Figure 1.
  • both the transparent conductive oxide layer 200 and the electron transport layer 300 are formed with the first scribe region, and then, when the barrier layer 700 is further formed on the electron transport layer, a part of the barrier layer 700 is formed on the first Within a scribe area, as shown in Figure 2.
  • the photoactive layer 400 is a layer perovskite, may be formed, for example, CH 3 NH 3 PbI x, CH 3 NH 3 PbBr x perovskite-like crystal form obtained; the barrier layer 700 by a halide group At least one of a material, an oxide-based material, a nitride-based material, and a carbide-based material is formed.
  • the halide-based material may be, for example, chloride (such as lead chloride), bromide (such as cyanogen bromide), or iodide (such as lead iodide), and the oxide-based material may be, for example, Al 2 O 3 , SiO 2, or the like.
  • the halide-based material uses bromide or iodide, so that the barrier layer 700 formed of bromide or iodide can passivate the edge of the photoactive layer 400 (perovskite layer) to a certain extent To further improve the stability of the photoactive layer 400.
  • the band gap of the barrier layer 700 is larger than the band gap of the photoactive layer 400.
  • the blocking layer 700 can effectively block the photo-generated electrons and holes in the photoactive layer 400 from flowing into the electrode, thereby improving the reliability of the entire solar module.
  • the band gap of the barrier layer 700 is not less than 2.5 eV, and the band gap of the photoactive layer 400 is 1.5 to 1.8 eV.
  • the blocking layer 700 has a better blocking effect on photogenerated electrons and holes generated in the photoactive layer 400.
  • the perovskite solar module may further include: a second scribe area, the second scribe area passes through the electron transport layer 300, the photoactive layer 400, the hole transport layer 500, and the barrier layer 700 is obtained by scribing, and thus is located in the electron transport layer 300, the photoactive layer 400, the hole transport layer 500, and the barrier layer 700, and the protrusion 610 of the electrode 600 is provided in the second scribing area.
  • the perovskite solar module of the present invention does not specifically limit the specific types or materials of the substrate, the transparent conductive oxide layer, the electron transport layer, the hole transport layer, and the electrode, and those skilled in the art can Obtained according to conventional options.
  • the substrate may be a glass substrate;
  • the transparent conductive oxide layer may be made of aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), gallium-doped zinc oxide (GZO), gallium-doped zinc aluminum oxide (GAZO), fluorine-doped At least one of tin oxide (FTO), tin-doped indium oxide (ITO), tungsten-doped indium oxide (IWO) and titanium-doped indium oxide (ITIO);
  • the electron transport layer may be formed of a fullerene derivative PCBM; empty
  • the hole transport layer can be formed of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS);
  • the electrode can be a metal electrode (such as Ag electrode, Cu electrode, Au electrode, etc.), oxidation
  • the material electrode, the carbon material electrode, or the composite electrode since the barrier layer can separate the photoactive layer from the
  • the perovskite solar module of the present invention may also have conventional structures such as encapsulation and backplane, which will not be repeated here.
  • the electrode and the hole transport layer may be further scribed to obtain a third scribed region 830, as shown in FIGS. 3 and 4.
  • the present invention proposes a method for preparing the perovskite solar module of the above embodiment.
  • the method includes: (1) forming a transparent conductive oxide layer on the substrate, and forming the first scribed region in the transparent conductive oxide layer by scribing, and then on the transparent conductive oxide layer Forming an electron transport layer; (2) forming a barrier layer and a photoactive layer on the electron transport layer; (3) forming a hole transport layer on the barrier layer and the photoactive layer; (4) providing an electrode on the hole transport layer.
  • the barrier layer material and the photoactive layer material are further applied on the electron transport layer, and by making the barrier layer
  • the material and/or the photoactive layer material undergo a selective phase change to obtain a barrier layer and a photoactive layer.
  • the perovskite solar module of the above embodiment is obtained. Compared with the traditional preparation process of the perovskite solar module, this method does not need to increase the number of steps too much. Using this method, the perovskite solar module of the above embodiment can be obtained simply and efficiently.
  • the first conductive layer may be formed in the transparent conductive oxide layer and the electron transport layer by scribing Scratch the area.
  • the transparent conductive oxide layer 200 may be formed on the substrate 100 first, and then the transparent conductive oxide layer 200 may be scribed to obtain the first scribed region 810 ( As shown in FIG. 5); the transparent conductive oxide layer 200 and the electron transport layer 300 may be formed on the substrate 100 first, and then the transparent conductive oxide layer 200 and the electron transport layer 300 may be scribed to obtain the first scribed region 810 (as shown in Figure 6).
  • a transparent conductive oxide layer 200 may be formed on the substrate 100 first, and then, after the first scribed region 810 is formed on the transparent conductive oxide layer 200 by laser or physical scribing, An electron transport layer 300 is further formed on the transparent conductive oxide layer 200, whereby a part of the electron transport layer 300 is formed in the first scribe region 810.
  • a transparent conductive oxide layer 200 and an electron transport layer 300 may be formed on the substrate 100 in sequence, and then, the transparent conductive oxide layer 200 and the electron transport layer may be scribed on the transparent conductive oxide layer 200 by laser or physical A first scribe area 810 is formed on 300.
  • a part of the barrier layer 700 will be formed in the first scribe area 810.
  • the method of forming the transparent conductive oxide layer 200 and the electron transport layer 300 is not particularly limited, and those skilled in the art can choose according to actual needs, for example, a conventional transparent conductive oxide layer, electron transport layer can be used
  • the materials are formulated into solutions or slurries, respectively, and formed by coating to form the transparent conductive oxide layer 200 and the electron transport layer 300 in sequence, or by chemical vapor deposition or other methods.
  • a photoactive layer 400 and a barrier layer 700 are formed on the electron transport layer 300.
  • the method for forming the photoactive layer 400 and the barrier layer 700 is not particularly limited, and those skilled in the art can choose according to actual needs.
  • conventional materials suitable for forming the perovskite layer and the barrier layer may be formulated into solutions or slurries, respectively, and the photoactive layer and the barrier layer may be coated Formed on the electron transport layer.
  • the material used to form the perovskite layer is converted into a perovskite crystal structure by using an appropriate processing method (eg, heat treatment).
  • a multi-slot extrusion coater 900 may be used to simultaneously apply the photoactive layer material and the barrier layer material to the electron transport layer 300.
  • the extrusion coating machine 900 includes a plurality of first notches 910 and a plurality of second notches 920, the first notches 910 and the second notches 920 are sequentially spaced apart, and are suitable for outputting different materials, thereby achieving At the same time, the photoactive layer 400 and the barrier layer 700 are formed on the electron transport layer 300.
  • a hole transport layer 500 is formed on the photoactive layer 400 and the barrier layer 700.
  • the method for forming the hole transport layer 500 is not particularly limited, and those skilled in the art can choose according to actual needs.
  • a conventional hole transport layer material can be formulated into a solution or slurry, which is formed in turn by coating.
  • the hole transport layer 500 can also be obtained by chemical vapor deposition or other methods.
  • a second scribe region 820 is formed in the electron transport layer 300, the hole transport layer 500, and the barrier layer 700 by scribing, and then the electrode 600 is provided on the hole transport layer 500, and The protrusion 610 of the electrode 600 is provided in the second scribe area 820. Since the solar module of the present invention is provided with a barrier layer, in this step, the barrier layer 700 can be scribed without scoring the photoactive layer 400, which can meet the requirement of providing the electrode 600, thereby further improving solar energy Component reliability.
  • the electrode 600 and the hole transport layer 500 may be further scribed to obtain a third scribed region 830, as shown in FIGS. 3 and 4.
  • the present invention also proposes a method of forming the barrier layer 700 and the photoactive layer 400 by “selective phase change”.
  • 710 represents a halide-based material (such as lead chloride and/or lead bromide)
  • 720 represents an oxide-based material, a nitride-based material, or a carbide-based material
  • 410 represents a material used to form calcium Titanium ore photoactive layer material.
  • the materials used to form the perovskite photoactive layer may include methyl iodide (MAI) and halides.
  • the barrier layer 700 and the photoactive layer 400 may be formed at the same time. Specifically, using the multi-slot extrusion coater as described above, the barrier layer material and the photoactive layer material are separately extruded and coated through different slots. According to a specific example of the present invention, further, by heat-treating the material for forming the perovskite photoactive layer, a perovskite photoactive layer can be obtained.
  • the barrier layer 700 and the photoactive layer 400 may be formed in steps. Specifically, when a halide-based material is used as the barrier layer material, a layer of barrier layer material 710 may be coated on the electron transport layer 300 first, and then spaced apart using a multi-slot extrusion coating machine as described above The material 410 for forming the perovskite photoactive layer is coated on the barrier layer material 710, and then through heat treatment, the material 410 for forming the perovskite photoactive layer can form a perovskite with the barrier layer 710 located below The photoactive layer, and since the material 410 used to form the perovskite photoactive layer is coated at intervals, the barrier layer material that is not covered with the 410 part will form a barrier layer.
  • the barrier material When using an oxide-based material, a nitride-based material or a carbide-based material as the barrier material, you can first use the multi-slot extrusion coater as described above to separately apply the barrier through different slots The layer material and the halide in the perovskite photoactive layer material, and then the barrier layer material and the halide material are coated with other materials for forming the perovskite photoactive layer. Further, through heat treatment, other materials used to form the perovskite photoactive layer and the halide material form a perovskite photoactive layer without reacting with the barrier layer material 720, thereby obtaining a barrier layer and a photoactive layer.
  • the materials used to form the perovskite photoactive layer can also be replaced by MAI with CAI or Rb, FAI with Cs or Rb, or with other halides. Replace lead iodide and lead bromide.
  • KI or HI can also be added to the material used to form the perovskite photoactive layer, so that I can be used to fill possible defects in the perovskite crystal form, thereby further improving the photoactivity
  • the selective phase change effect of the layer material further improves the performance of the perovskite solar module.
  • 710 is lead bromide and 720 is alumina; 410 is a mixed material of MAI, lead iodide, and lead bromide.
  • 710 is lead bromide and 720 is alumina; 410 is a mixed material of MAI, KI or HI, lead iodide and lead bromide.

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Abstract

提供了钙钛矿太阳能组件及其制备方法。该钙钛矿太阳能组件包括：基底；透明导电氧化物层，其设在基底的至少一部分表面；电子传输层，其设在透明导电氧化物层远离基底的至少一部分表面；光活性层，其设在电子传输层远离透明导电氧化物层的至少一部分表面；空穴传输层，其设在光活性层远离电子传输层的至少一部分表面；电极，其设在空穴传输层远离光活性层的至少一部分表面；以及阻挡层，其设在光活性层中且将光活性层与电极的凸出部间隔开。该钙钛矿太阳能组件通过设置阻挡层，可有效解决光活性层与电极直接接触引起的分流等问题，显著提高钙钛矿太阳能组件的性能。

Description

钙钛矿薄膜太阳能组件及其制备方法 技术领域
本发明涉及光伏器件领域，特别涉及一种钙钛矿太阳能组件及其制备方法。
背景技术
钙钛矿太阳能电池是目前快速发展的一类太阳能电池，具有效率高、成本低、制备简单等特点。钙钛矿太阳能电池按照结构划分为平面结构和介孔结构，主要包括透明电极、电子传输层、钙钛矿吸光材料、空穴传输层、对电极等。钙钛矿材料吸光后产生光生电子和空穴，分别传到电子传输层和空穴传输层，与外电路相连形成回路，输出电能。
然而，现有的钙钛矿太阳能电池仍有待改进。
发明内容
有鉴于此，本发明旨在提出一种钙钛矿太阳能组件及其制备方法。该钙钛矿太阳能组件通过设置阻挡层，可有效解决光活性层与电极直接接触引起的分流等问题，显著提高钙钛矿太阳能组件的性能。
为达到上述目的，本发明的技术方案是这样实现的：
根据本发明的一个方面，本发明提出了一种钙钛矿太阳能组件。根据本发明的实施例，该钙钛矿太阳能组件包括：基底；透明导电氧化物层，所述透明导电氧化物层设在所述基底的至少一部分表面；电子传输层，所述电子传输层设在所述透明导电氧化物层远离所述基底的至少一部分表面；光活性层，所述光活性层设在所述电子传输层远离所述透明导电氧化物层的至少一部分表面；空穴传输层，所述空穴传输层设在所述光活性层远离所述电子传输层的至少一部分表面；电极，所述电极设在所述空穴传输层远离所述光活性层至少一部分表面；所述电极具有凸出部，所述凸出部穿过所述空穴传输层、所述光活性层和所述电子传输层与所述透明导电氧化物层相连；以及阻挡层，所述阻挡层设在所述光活性层中且将所述光活性层与所述凸出部间隔开。
相对于现有技术，本发明上述实施例的钙钛矿太阳能组件至少具有以下优势：
根据本发明实施例的钙钛矿太阳能组件通过在光活性层中设置阻挡层，可以利用阻挡层将光活性层与电极间隔开，避免光活性层中产生的光生电子或空穴流入金属电极，从而提高钙钛矿太阳能组件的性能。同时，利用阻挡层将光活性层与电极隔离，还可以避免激光或物理划刻过程中可能发生的化学反应对光活性层造成的降解、损坏等不利影 响。另外，该阻挡层可在形成光活性层的同时形成，制备方法简单。
进一步的，所述透明导电氧化物层中形成有第一划刻区域，所述电子传输层的一部分设在所述第一划刻区域内；或者，所述透明导电氧化物层和所述电子传输层中形成有第一划刻区域，所述阻挡层的一部分设在所述第一划刻区域内。
进一步的，所述光活性层由钙钛矿形成，所述阻挡层由卤化物基材料、氧化物基材料、氮化物基材料和碳化物基材料中的至少之一形成。
进一步的，所述阻挡层的带隙大于所述光活性层的带隙。
进一步的，所述阻挡层的带隙不小于2.5eV，所述光活性层的带隙为1.5～1.8eV。
进一步的，所述钙钛矿太阳能组件进一步包括：第二划刻区域，所述第二划刻区域位于电子传输层、所述光活性层、所述空穴传输层和所述阻挡层中，所述电极的凸出部设在所述第二划刻区域内。
根据本发明的另一方面，本发明提出了一种制备上述钙钛矿太阳能组件的方法。根据本发明的实施例，该方法包括：(1)在基底上形成透明导电氧化物层，并通过划刻在所述透明导电氧化物层中形成第一划刻区域后，在所述透明导电氧化物层上形成电子传输层；(2)在所述电子传输层上形成阻挡层和光活性层；(3)在所述阻挡层和所述光活性层上形成空穴传输层；(4)在所述空穴传输层上设置电极。
根据本发明实施例的制备钙钛矿太阳能组件的方法，在形成透明导电氧化物层和电子传输层后，进一步地将阻挡层材料和光活性层材料施加在电子传输层上，并通过使阻挡层材料和/或光活性层材料发生选择性相变，得到阻挡层和光活性层。后续在阻挡层和光活性层上形成空穴传输层，并设置电极后，得到上述实施例的钙钛矿太阳能组件。该方法相对于传统的钙钛矿太阳能组件制备工艺，不需要过多地增加工序，采用该方法可以简便高效地获得上述实施例的钙钛矿太阳能组件。
进一步的，步骤(1)中，也可以在基底上依次形成透明导电氧化物层和电子传输层后，通过划刻在所述透明导电氧化物层和所述电子传输层中形成第一划刻区域。
进一步的，步骤(2)中，在所述电子传输层上同时形成阻挡层和光活性层。
进一步的，所述方法在步骤(4)之前进一步包括：通过划刻在所述电子传输层、所述空穴传输层和所述阻挡层中形成第二划刻区域，然后在所述空穴传输层上设置电极，并将所述电极的凸出部设在所述第二划刻区域内。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得 明显，或通过本发明的实践了解到。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是根据本发明一个实施例的钙钛矿太阳能组件的结构示意图；
图2是根据本发明再一个实施例的钙钛矿太阳能组件的结构示意图；
图3是根据本发明又一个实施例的钙钛矿太阳能组件的结构示意图；
图4是根据本发明又一个实施例的钙钛矿太阳能组件的结构示意图；
图5是根据本发明一个实施例的制备钙钛矿太阳能组件的方法流程示意图；
图6是根据本发明再一个实施例的制备钙钛矿太阳能组件的方法流程示意图；
图7是根据本发明一个实施例的利用挤出式涂布机涂布阻挡层材料和光活性层材料的方法示意图；
图8是根据本发明一个实施例的利用挤出式涂布机涂布阻挡层材料和光活性层材料的方法另一视角示意图；
图9是根据本发明一个实施例的形成阻挡层和光活性层的方法流程示意图；
图10是根据本发明再一个实施例的形成阻挡层和光活性层的方法流程示意图。
附图标记：
100：基底；200：透明导电氧化物层；300：电子传输层；
400：光活性层；410：光活性层材料；
500：空穴传输层；600：电极；610：凸出部；
700：阻挡层；
710：卤化物基材料；720：氧化物基材料、氮化物基材料或碳化物基材料；
810：第一划刻区域；820：第二划刻区域；830：第三划刻区域；
900：挤出式涂布机；910：第一槽口；920：第二槽口。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。实 施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。所用试剂或仪器未注明生产厂商者，均为可以通过市购获得的常规产品。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
根据本发明的一个方面，本发明提出了一种钙钛矿太阳能组件。根据本发明的实施例，参考图1和2，该钙钛矿太阳能组件包括：基底100、透明导电氧化物层200、电子传输层300、光活性层400、空穴传输层500、电极600和阻挡层700。其中，透明导电氧化物层200设在基底100的至少一部分表面；电子传输层300设在透明导电氧化物层200远离基底100的至少一部分表面；光活性层400设在电子传输层300远离透明导电氧化物层200的至少一部分表面；空穴传输层500设在光活性层400远离电子传输层300的至少一部分表面；电极600设在空穴传输层500远离所述光活性层400至少一部分表面；电极600具有凸出部610，凸出部610穿过空穴传输层500、光活性层400和电子传输层300并与透明导电氧化物层200相连；阻挡层700设在光活性层400中且将 光活性层400与电极600的凸出部610间隔开。
下面进一步参考图1～4对根据本发明实施例的钙钛矿太阳能组件进行详细描述。
根据本发明的实施例，在该钙钛矿太阳能组件的制备方法中，既可以先在基底100上形成透明导电氧化物层200，然后对透明导电氧化物层200进行划刻，得到第一划刻区域(方案一)；也可以先在基底100上形成透明导电氧化物层200和电子传输层300，然后对透明导电氧化物层200和电子传输层300进行划刻，得到第一划刻区域(方案二)。由此，在上述方案一中，透明导电氧化物层200中形成有第一划刻区域，进而，在透明导电氧化物层200上进一步形成电子传输层300时，电子传输层300的一部分会形成在第一划刻区域内，如图1所示。在上述方案二中，透明导电氧化物层200和电子传输层300中均形成有第一划刻区域，进而，在电子传输层上进一步形成阻挡层700时，阻挡层700的一部分会形成在第一划刻区域内，如图2所示。
根据本发明的实施例，上述光活性层400为钙钛矿层，例如可以由CH 3NH 3PbI x、CH 3NH 3PbBr x等形成钙钛矿晶型得到；上述阻挡层700由卤化物基材料、氧化物基材料、氮化物基材料和碳化物基材料中的至少之一形成。卤化物基材料例如可以为氯化物(如氯化铅)、溴化物(如溴化氰)或碘代物(如碘化铅)，氧化物基材料例如可以是Al 2O 3、SiO 2等。优选的，卤化物基材料采用溴化物或碘代物，由此，以溴化物或碘代物形成的阻挡层700可以在一定程度上对光活性层400(钙钛矿层)的边缘起到钝化作用，从而进一步提高光活性层400的稳定性。
根据本发明的实施例，阻挡层700的带隙大于光活性层400的带隙。由此，阻挡层700可以有效地阻挡光活性层400中的光生电子和空穴流入电极，从而提高太阳能组件整体的可靠性。
根据本发明的优选实施例，阻挡层700的带隙不小于2.5eV，光活性层400的带隙为1.5～1.8eV。由此，阻挡层700对光活性层400中产生的光生电子和空穴的阻挡效果更佳。
根据本发明的实施例，该钙钛矿太阳能组件还可以进一步包括：第二划刻区域，该第二划刻区域通过对电子传输层300、光活性层400、空穴传输层500和阻挡层700进行划刻得到，由此位于电子传输层300、光活性层400、空穴传输层500和阻挡层700中，电极600的凸出部610设在该第二划刻区域内。
另外，需要说明的是，本发明的钙钛矿太阳能组件对基底、透明导电氧化物层、电子传输层、空穴传输层和电极的具体种类或材料并不做特别限制，本领域技术人员可以根据常规选择得到。例如，基底可以采用玻璃基底；透明导电氧化物层可以由掺铝氧化 锌(AZO)、掺硼氧化锌(BZO)、掺镓氧化锌(GZO)、掺镓铝氧化锌(GAZO)、掺氟氧化锡(FTO)、掺锡氧化铟(ITO)、掺钨氧化铟(IWO)和掺钛氧化铟(ITIO)中的至少之一形成；电子传输层可以由富勒烯衍生物PCBM形成；空穴传输层可以由聚(3,4-乙撑二氧噻吩)-聚苯乙烯磺酸形成(PEDOT:PSS)形成；电极可以采用金属电极(如Ag电极、Cu电极、Au电极等)、氧化物电极、碳材料电极或复合电极，由于阻挡层可以将光活性层与电极隔开，本发明的太阳能组件中对电极材料有更大的选择范围。
根据本发明的一些实施例，本发明的钙钛矿太阳能组件还可以具有封装、背板等常规结构，在此不再一一赘述。为了便于对钙钛矿太阳能组件进行封装或设置背板，可以进一步地对电极和空穴传输层进行划刻，得到第三划刻区域830，如图3和4所示。
根据本发明的另一方面，本发明提出了一种制备上述实施例的钙钛矿太阳能组件的方法。根据本发明的实施例，该方法包括：(1)在基底上形成透明导电氧化物层，并通过划刻在透明导电氧化物层中形成第一划刻区域后，在透明导电氧化物层上形成电子传输层；(2)在电子传输层上形成阻挡层和光活性层；(3)在阻挡层和光活性层上形成空穴传输层；(4)在空穴传输层上设置电极。
根据本发明实施例的制备钙钛矿太阳能组件的方法，在形成透明导电氧化物层和电子传输层后，进一步地将阻挡层材料和光活性层材料施加在电子传输层上，并通过使阻挡层材料和/或光活性层材料发生选择性相变，得到阻挡层和光活性层。后续在阻挡层和光活性层上形成空穴传输层，并设置电极后，得到上述实施例的钙钛矿太阳能组件。该方法相对于传统的钙钛矿太阳能组件制备工艺，不需要过多地增加工序，采用该方法可以简便高效地获得上述实施例的钙钛矿太阳能组件。
根据本发明的实施例，步骤(1)中，也可以在基底上依次形成透明导电氧化物层和电子传输层后，通过划刻在透明导电氧化物层和所述电子传输层中形成第一划刻区域。具体的，在该钙钛矿太阳能组件的制备方法中，既可以先在基底100上形成透明导电氧化物层200，然后对透明导电氧化物层200进行划刻，得到第一划刻区域810(如图5所示)；也可以先在基底100上形成透明导电氧化物层200和电子传输层300，然后对透明导电氧化物层200和电子传输层300进行划刻，得到第一划刻区域810(如图6所示)。
下面分别参考图5和6对根据本发明实施例的制备钙钛矿太阳能组件的方法进行详细描述。
参考图5，根据本发明的实施例，可以首先在基底100上形成透明导电氧化物层200， 进而，通过激光或物理划刻在透明导电氧化物层200上形成第一划刻区域810后，在透明导电氧化层200上进一步形成电子传输层300，由此，电子传输层300的一部分形成在第一划刻区域810内。
参考图6，根据本发明的实施例，可以首先依次在基底100上形成透明导电氧化物层200和电子传输层300，进而，通过激光或物理划刻在透明导电氧化物层200和电子传输层300上形成第一划刻区域810。由此，在后续形成光活性层400和阻挡层700时，阻挡层700的一部分会形成在第一划刻区域810内。
需要说明的是，形成透明导电氧化物层200和电子传输层300的方法并不受特别限制，本领域技术人员可以根据实际需要进行选择，例如可以利用常规的透明导电氧化物层、电子传输层材料分别配制成溶液或浆液，并通过涂覆的方法形成依次形成透明导电氧化物层200和电子传输层300，也可以通过化学气相沉积等方法。
进一步地，参考图5和6，在电子传输层300上形成光活性层400和阻挡层700。形成光活性层400和阻挡层700的方法并不受特别限制，本领域技术人员可以根据实际需要进行选择。在一些实施例中，为了形成钙钛矿光活性层，可以利用常规的适于形成钙钛矿层的材料、阻挡层分别配制成溶液或浆液，并通过涂覆的方法将光活性层和阻挡层形成在电子传输层上。根据本发明的一些实施例，在涂覆钙钛矿层的材料后，通过采用适当的处理方法(例如热处理)，使用于形成钙钛矿层的材料转变为钙钛矿晶体结构。
根据本发明的具体示例，参考图7和8，可以采用多槽口的挤出式涂布机900同时将光活性层材料和阻挡层材料施加到电子传输层300上。挤出式涂布机900上包括多个第一槽口910和多个第二槽口920，第一槽口910和第二槽口920依次间隔设置，且适于输出不同的材料，从而实现同时在电子传输层300上光活性层400和阻挡层700。
进一步地，参考图5和6，在光活性层400和阻挡层700上形成空穴传输层500。形成空穴传输层500的方法并不受特别限制，本领域技术人员可以根据实际需要进行选择，例如可以利用常规的空穴传输层材料配制成溶液或浆液，并通过涂覆的方法形成依次形成空穴传输层500，也可以通过化学气相沉积等方法。
进一步地，参考图5和6，通过划刻在电子传输层300、空穴传输层500和阻挡层700中形成第二划刻区域820，然后在空穴传输层500上设置电极600，并将电极600的凸出部610设在第二划刻区域820内。由于本发明的太阳能组件设置了阻挡层，在该步骤中，可对阻挡层700进行划刻，而无需对光活性层400进行划刻，即可满足设置电极600的要求，从而进一步提高了太阳能组件的可靠性。
进一步地，还可以对太阳能组件进行封装或设置背板等常规加工，在此不再一一赘 述。为了便于对太阳能组件进行封装或设置背板，可以进一步地对电极600和空穴传输层500进行划刻，得到第三划刻区域830，如图3和4所示。
另外，根据本发明的实施例，参考图9和10，本发明还提出一种通过“选择性相变”形成阻挡层700和光活性层400的方法。在图9和图10中，710表示卤化物基材料(例如氯化铅和/或溴化铅)，720表示氧化物基材料、氮化物基材料或碳化物基材料，410表示用于形成钙钛矿光活性层的材料。其中，用于形成钙钛矿光活性层的材料可包括碘化甲胺(MAI)和卤化物。
参考图9，阻挡层700和光活性层400可以同时形成。具体的，利用如前所述的多槽口挤出式涂布机，通过不同槽口分别挤出涂布阻挡层材料和光活性层材料。根据本发明的具体示例，进而，通过对用于形成钙钛矿光活性层的材料进行热处理，可以获得钙钛矿光活性层。
参考图10，阻挡层700和光活性层400可以分步形成。具体的，当使用卤化物基材料作为阻挡层材料时，可以先在电子传输层300上涂覆一层阻挡层材料710，然后利用如前所述的多槽口挤出式涂布机间隔地在阻挡层材料710上涂覆用于形成钙钛矿光活性层的材料410，进而通过热处理，用于形成钙钛矿光活性层的材料410可以与位于其下的阻挡层710形成钙钛矿光活性层，而由于用于形成钙钛矿光活性层的材料410为间隔涂覆，未覆盖有410部分的阻挡层材料则会形成阻挡层。当使用氧化物基材料、氮化物基材料或碳化物基材料作为阻挡层材料时，可以先利用如前所述的多槽口挤出式涂布机，通过不同槽口分别挤出涂布阻挡层材料和钙钛矿光活性层材料中的卤化物，然后在阻挡层材料和卤化物材料上涂覆用于形成钙钛矿光活性层的其他材料。进而通过热处理，用于形成钙钛矿光活性层的其他材料和卤化物材料形成钙钛矿光活性层，而不会与阻挡层材料720反应，从而获得阻挡层和光活性层。
另外，用于形成钙钛矿光活性层的材料中也可以用碘化甲脒(FAI)、含Cs或Rb的MAI、含Cs或Rb的FAI来替换MAI，或是采用其他的卤化物来替换碘化铅和溴化铅。在图10所示方法中，用于形成钙钛矿光活性层的材料中还可以加入KI或HI，从而利用I来填补钙钛矿晶型可能存在的缺陷，由此可进一步提高光活性层材料的选择性相变效果，进一步提高钙钛矿太阳能组件的性能。
根据本发明的一个具体示例，在图9所示方法中，710为溴化铅，720为氧化铝；410为MAI、碘化铅和溴化铅的混合材料。在图10所示方法中，710为溴化铅，720为氧化铝；410为MAI、KI或HI、碘化铅和溴化铅的混合材料。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (10)

  1. 一种钙钛矿太阳能组件，其特征在于，包括：
    基底；
    透明导电氧化物层，所述透明导电氧化物层设在所述基底的至少一部分表面；
    电子传输层，所述电子传输层设在所述透明导电氧化物层远离所述基底的至少一部分表面；
    光活性层，所述光活性层设在所述电子传输层远离所述透明导电氧化物层的至少一部分表面；
    空穴传输层，所述空穴传输层设在所述光活性层远离所述电子传输层的至少一部分表面；
    电极，所述电极设在所述空穴传输层远离所述光活性层至少一部分表面；所述电极具有凸出部，所述凸出部穿过所述空穴传输层、所述光活性层和所述电子传输层与所述透明导电氧化物层相连；以及
    阻挡层，所述阻挡层设在所述光活性层中且将所述光活性层与所述凸出部间隔开。
  2. 根据权利要求1所述的钙钛矿太阳能组件，其特征在于，所述透明导电氧化物层中形成有第一划刻区域，所述电子传输层的一部分设在所述第一划刻区域内；
    或者，所述透明导电氧化物层和所述电子传输层中形成有第一划刻区域，所述阻挡层的一部分设在所述第一划刻区域内。
  3. 根据权利要求1所述的钙钛矿太阳能组件，其特征在于，所述光活性层由钙钛矿形成，所述阻挡层由卤化物基材料、氧化物基材料、氮化物基材料和碳化物基材料中的至少之一形成。
  4. 根据权利要求3所述的钙钛矿太阳能组件，其特征在于，所述阻挡层的带隙大于所述光活性层的带隙。
  5. 根据权利要求3所述的钙钛矿太阳能组件，其特征在于，所述阻挡层的带隙不小于2.5eV，所述光活性层的带隙为1.5～1.8eV。
  6. 根据权利要求1～5任一项所述的钙钛矿太阳能组件，其特征在于，进一步包括：
    第二划刻区域，所述第二划刻区域位于电子传输层、所述光活性层、所述空穴传输层和所述阻挡层中，所述电极的凸出部设在所述第二划刻区域内。
  7. 一种制备权利要求1～6任一项所述的钙钛矿太阳能组件的方法，其特征在于，包括：
    (1)在基底上形成透明导电氧化物层，并通过划刻在所述透明导电氧化物层中形成第 一划刻区域后，在所述透明导电氧化物层上形成电子传输层；
    (2)在所述电子传输层上形成阻挡层和光活性层；
    (3)在所述阻挡层和所述光活性层上形成空穴传输层；
    (4)在所述空穴传输层上设置电极。
  8. 根据权利要求7所述的方法，其特征在于，步骤(1)中，在基底上依次形成透明导电氧化物层和电子传输层后，通过划刻在所述透明导电氧化物层和所述电子传输层中形成第一划刻区域。
  9. 根据权利要求7所述的方法，其特征在于，步骤(2)中，在所述电子传输层上同时形成阻挡层和光活性层。
  10. 根据权利要求7所述的方法，其特征在于，在步骤(4)之前进一步包括：通过划刻在所述电子传输层、所述空穴传输层和所述阻挡层中形成第二划刻区域，然后在所述空穴传输层上设置电极，并将所述电极的凸出部设在所述第二划刻区域内。
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