WO2024099114A1 - 光电器件的制备方法、光电器件与电子设备 - Google Patents

光电器件的制备方法、光电器件与电子设备 Download PDF

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WO2024099114A1
WO2024099114A1 PCT/CN2023/127383 CN2023127383W WO2024099114A1 WO 2024099114 A1 WO2024099114 A1 WO 2024099114A1 CN 2023127383 W CN2023127383 W CN 2023127383W WO 2024099114 A1 WO2024099114 A1 WO 2024099114A1
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layer
functional layer
annealing
depth
annealing treatment
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PCT/CN2023/127383
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English (en)
French (fr)
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敖资通
洪佳婷
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Tcl科技集团股份有限公司
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Publication of WO2024099114A1 publication Critical patent/WO2024099114A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • the present application relates to the field of optoelectronic technology, and in particular to a method for preparing an optoelectronic device, an optoelectronic device and an electronic device.
  • Photoelectric devices refer to a type of device made using the photoelectric effect or thermoelectric effect of semiconductors, including but not limited to photovoltaic cells, photoelectric devices, etc.
  • OLED organic light-emitting diodes
  • QLED quantum dot light-emitting diodes
  • OLED or QLED has a "sandwich" structure, that is, it includes an anode, a cathode and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode.
  • the light-emitting principle of the light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.
  • the preparation process of at least some functional layers cannot involve high temperature (higher than 40°C), especially when the material of the lower functional layer is a thermosensitive material, which leads to poor performance of the functional layer and thus has a negative impact on the working performance of the optoelectronic device.
  • the present application provides a method for preparing an optoelectronic device, an optoelectronic device and an electronic device to improve the adverse effects of the preparation process of the functional layer on the performance of the optoelectronic device.
  • the present application provides a method for preparing an optoelectronic device, comprising the following steps:
  • the prefabricated device comprising a cured functional layer
  • the functional layer includes one or more film layers, and a first annealing treatment with a controllable annealing depth is performed on at least one of the film layers.
  • the present application provides a photoelectric device, wherein the photoelectric device is a positive structure, and the photoelectric device comprises:
  • a bottom electrode and a top electrode are arranged opposite to each other;
  • a light-emitting layer is disposed between the bottom electrode and the top electrode.
  • An electronic functional layer disposed between the light-emitting layer and the top electrode, the electronic functional layer comprising an electron transport layer;
  • the method for preparing the optoelectronic device comprises the following steps:
  • the prefabricated device comprising a cured electron transport layer
  • the electron transport layer includes one or more film layers, and a first annealing treatment with a controllable annealing depth is performed on at least one of the film layers.
  • the present application provides a photoelectric device, wherein the photoelectric device is an inverted structure, and the photoelectric device comprises:
  • a bottom electrode and a top electrode are arranged opposite to each other;
  • a light-emitting layer is disposed between the bottom electrode and the top electrode.
  • a hole functional layer is disposed between the light emitting layer and the top electrode, and the hole functional layer includes a hole transport layer;
  • the method for preparing the optoelectronic device comprises the following steps:
  • the prefabricated device comprising a cured hole transport layer
  • the hole transport layer includes one or more film layers, and a first annealing treatment with a controllable annealing depth is performed on at least one of the film layers.
  • the method for preparing the optoelectronic device at least one film layer in the functional layer is subjected to a first annealing treatment with a controllable annealing depth, which effectively avoids the adverse effects of the annealing process on the performance of the underlying film, especially when the material of the underlying film is a heat-sensitive material, and ensures that the film layer is fully annealed to improve the performance of the film layer.
  • the optoelectronic device prepared by the method for preparing the optoelectronic device has better optoelectronic performance and service life, and the maximum brightness, maximum current efficiency and device life are significantly improved.
  • FIG. 1 is a schematic diagram of a first functional layer annealing method provided in an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a second functional layer annealing method provided in an embodiment of the present application.
  • FIG. 3 is a schematic diagram of a third functional layer annealing method provided in an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a fourth functional layer annealing method provided in an embodiment of the present application.
  • FIG5 is a schematic diagram of the structure of a first optoelectronic device provided in an embodiment of the present application.
  • FIG. 6 is a schematic diagram of the structure of a second optoelectronic device provided in an embodiment of the present application.
  • FIG. 7 is a schematic diagram of the structure of a third optoelectronic device provided in an embodiment of the present application.
  • FIG8 is a schematic diagram of the structure of a fourth optoelectronic device provided in an embodiment of the present application.
  • the embodiments of the present application provide a quantum dot light-emitting layer and a method for preparing the same, and a quantum dot light-emitting diode device.
  • the following are described in detail. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.
  • the term "including” means “including but not limited to”.
  • the terms first, second, third, etc. are used only as labels, and no numerical requirements or order is imposed.
  • a and/or B can represent three situations: the first situation is that A exists alone; the second situation is that A and B exist at the same time; the third situation is that B exists alone, where A and B can be singular or plural, respectively.
  • At least one means one or more, and "a plurality of” means two or more. "At least one of the following” or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, “at least one of a, b or c" or “at least one of a, b and c” can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or plural, respectively.
  • layer A is formed on one side of layer B
  • layer A is formed on the side of layer B away from layer C
  • similar descriptions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B.
  • layer A is arranged on one side of layer B
  • layer A is arranged on the side of layer B away from layer C
  • layer A is in direct contact with layer B, or that other spacing structure layers are arranged between layer A and layer B
  • layer A is arranged between layer B and layer C
  • layer A is in direct contact with layer B and layer A is in direct contact with layer C
  • layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C
  • one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C
  • one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.
  • An embodiment of the present application provides a method for preparing a photoelectric device, wherein the photoelectric device includes but is not limited to a light-emitting device, a photovoltaic cell, and a photodetector, and comprises the steps of: providing a prefabricated device, wherein the prefabricated device includes a cured functional layer; wherein the functional layer includes one or more film layers, and performing a first annealing treatment with a controllable annealing depth on at least one of the film layers.
  • At least one film layer in the functional layer undergoes a first annealing treatment with a controllable annealing depth, which effectively avoids the annealing process from having an adverse effect on the performance of the underlying film, especially when the material of the underlying film is a heat-sensitive material, and ensures that the film layer is fully annealed to improve the performance of the film layer.
  • the method for preparing at least one film layer includes the steps of: forming a cured film, and performing a first annealing treatment with a controllable annealing depth on the cured film.
  • the prefabricated device includes a thermosensitive material layer, and the functional layer is formed on one side of the thermosensitive material layer. It is understandable that when the functional layer is a single-layer structure, that is, the functional layer is composed of only one film layer, the method for preparing the functional layer includes the steps of: forming a cured film, and performing a first annealing treatment with a controllable annealing depth on the cured film.
  • the method for preparing at least the film layer closest to the thermosensitive material layer among the multiple film layers includes the steps of: forming a cured film, and performing a first annealing treatment with a controllable annealing depth on the cured film. It is understandable that when the functional layer includes multiple film layers, the materials of each of the film layers may be completely the same, may be different from each other, or may be only partially the same.
  • the first annealing treatment with controllable annealing depth may be an atomic layer annealing treatment, an electron beam annealing treatment, or an infrared laser irradiation treatment.
  • the first annealing treatment is selected from atomic layer annealing treatment, and the first annealing treatment with controllable annealing depth is performed on the film layer, comprising the steps of: bombarding the film layer with argon plasma.
  • the average power of the argon plasma bombardment is 50W to 450W, for example, 50W to 100W, 100W to 150W, 150W to 200W, 200W to 250W, 250W to 300W, 300W to 350W, 350W to 400W, or 400W to 450W.
  • the number of argon plasma bombardments is 1 to 20, for example, 1 to 5, 5 to 10, 10 to 15, or 15 to 20.
  • the time of a single argon plasma bombardment is 0.01s to 0.1s, for example, 0.01s to 0.03s, 0.03s to 0.05s, 0.05s to 0.07s, 0.07s to 0.09s, or 0.09s to 0.1s.
  • the time interval between adjacent argon plasma bombardments is 10s to 30s.
  • the first annealing treatment is selected from electron beam annealing treatment.
  • the average power of the electron beam spot in the first annealing treatment is 10 3 W/cm 2 to 10 4 W/cm 2 , for example, 10 3 W/cm 2 to 2 ⁇ 10 3 W/cm 2 , 2 ⁇ 10 3 W/cm 2 to 3 ⁇ 10 3 W/cm 2 , 3 ⁇ 10 3 W/cm 2 to 4 ⁇ 10 3 W/cm 2 , 4 ⁇ 10 3 W/cm 2 to 5 ⁇ 10 3 W/cm 2 , 5 ⁇ 10 3 W/cm 2 to 6 ⁇ 10 3 W/cm 2 , 6 ⁇ 10 3 W/cm 2 to 7 ⁇ 10 3 W/cm 2 , 7 ⁇ 10 3 W/cm 2 to 8 ⁇ 10 3 W/cm 2 , or 8 ⁇ 10 3 W/cm 2 to 9 ⁇ 10 3 W/
  • the electron beam scans the cured film for a time of 0.01s to 0.1s, for example, 0.01s to 0.03s, 0.03s to 0.05s, 0.05s to 0.07s, 0.07s to 0.09s, or 0.09s to 0.1s.
  • the accelerating voltage of the electron beam is 100V to 1000V, for example, 100V to 300V, 300V to 500V, 500V to 700V, 700V to 1000V.
  • the first annealing treatment is selected from infrared laser irradiation treatment, and the process parameters of the infrared laser irradiation treatment are: laser wavelength is 1000nm to 1064nm, pulse width is 100fs to 120fs, repetition frequency is 1kHz to 1.5kHz, beam quality factor is 1 to 1.2, and the laser scanning time of the cured film is 0.01s to 0.1s.
  • the step of forming a cured film comprises the following steps:
  • the deposition method of the solution containing the material of the film layer includes but is not limited to at least one of spin coating, coating, inkjet printing, doctor blading, dip pulling, immersion, spraying, rolling or casting.
  • the material of the film layer includes but is not limited to a hole injection material, a hole transport material, an electron transport material or an electron injection material.
  • the solvent of the solution is a material in which the material of the film layer can be well dispersed, for example, an organic solvent.
  • the solvent of the solution can be selected from at least one of dimethyl sulfoxide, methanol, ethanol, ethylene glycol, glycerol, isopropanol, butanol, pentanol, octanol, N-methylformamide, N,N-dimethylformamide, N-methylpyrrolidone, 2-methoxyethanol, 2-ethoxyethanol or 2-methoxybutanol.
  • the concentration of the material of the film layer in the solution is 20 mg/mL to 80 mg/mL, for example, 20 mg/mL, 30 mg/mL, 40 mg/mL, 50 mg/mL, 60 mg/mL, 70 mg/mL, or 80 mg/mL.
  • drying treatment includes all processes that can make the deposited solution of the material containing the film layer obtain higher energy and solidify into a film, and does not involve high-temperature heat treatment processes, and high temperature refers to a temperature higher than 80°C.
  • Drying treatment can be, for example, vacuum drying treatment, and the vacuum degree of vacuum drying treatment is, for example, 10-2 Mpa to 10-7 Mpa, and the time of vacuum drying treatment is, for example, 10min to 60min. In at least one embodiment of the present application, the vacuum degree of vacuum drying treatment is 10-2 Mpa, and the vacuum drying time is 15min. Drying treatment can also be, for example, low-temperature heat treatment, and the temperature of low-temperature heat treatment is 20°C to 40°C, and the time of low-temperature heat treatment is, for example, 5min to 60min.
  • the annealing of the film layer is not sufficient. If no further controllable depth annealing process is performed, the performance of the film layer is poor. Taking the film layer as an example, if the electron transport layer is not annealed sufficiently, the conductivity of the electron transport layer will decrease, causing abnormal charge accumulation in the device containing the electron transport layer during operation. In severe cases, multiple film layers of the device will have abnormal charge accumulation, and the abnormal charge accumulation cannot be eliminated by effective means, thereby adversely affecting the performance and service life of the device.
  • the prefabricated device further includes a light-emitting layer, the material of the light-emitting layer is a thermosensitive material, and the functional layer is formed on one side of the light-emitting layer.
  • the single film layer includes a first surface and a second surface arranged oppositely, the second surface is closer to the light-emitting layer than the first surface, and the light-emitting layer includes a third surface and a fourth surface arranged oppositely, the third surface is closer to the functional layer than the fourth surface.
  • the material of the light-emitting layer is, for example, selected from organic light-emitting materials or quantum dots, and the thickness of the light-emitting layer can be, for example, 15nm to 30nm.
  • the organic light-emitting material includes but is not limited to at least one of diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, TBPe fluorescent materials, TTPA fluorescent materials, TBRb fluorescent materials or DBP fluorescent materials.
  • Quantum dots include but are not limited to at least one of red quantum dots, green quantum dots or blue quantum dots, and quantum dots include but are not limited to at least one of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots.
  • the average particle size of the quantum dots can be, for example, 5nm to 10nm, and the average particle size of the quantum dots can be, for example, 5nm, 6nm, 7nm, 8nm, 9nm or 10nm.
  • the material of the single-component quantum dots, the material of the core of the core-shell quantum dots or the material of the shell of the core-shell quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, Hg
  • the chemical formula provided indicates the elemental composition, but does not indicate the content of each element.
  • CdZnS only indicates that it is composed of three elements: Cd, Zn and S.
  • inorganic perovskite quantum dots the general structural formula of inorganic perovskite quantum dots is AMX 3 , wherein A is a Cs + ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .
  • the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX 3 , wherein B is an organic amine cation, including but not limited to CH 3 (CH 2 ) n -2NH 3+ (n ⁇ 2) or NH 3 (CH 2 ) n NH 3 2+ (n ⁇ 2), M is a divalent metal cation, M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , and X is a halogen anion, including but not limited to Cl - , Br - or I - .
  • the material of the light-emitting layer when the material of the light-emitting layer includes quantum dots, the material of the light-emitting layer also includes ligands connected to the surface of the quantum dots, and the ligands include but are not limited to at least one of amine ligands, carboxylic acid ligands, thiol ligands, (oxygen) phosphine ligands, phospholipids, soft phospholipids or polyvinyl pyridine.
  • the amine ligands are, for example, selected from at least one of oleylamine, n-butylamine, n-octylamine, octaamine, 1,2-ethylenediamine or octadecylamine
  • the carboxylic acid ligands are, for example, selected from at least one of oleic acid, acetic acid, butyric acid, valeric acid, caproic acid, arachidic acid, decacarboxylic acid, undecylenic acid, tetradecanoic acid or stearic acid
  • the thiol ligands are, for example, selected from at least one of ethanethiol, propylthiol, mercaptoethanol, benzenethiol, octanethiol, octadecylthiol, dodecylthiol or octadecylthiol, and the (oxygen) phosphin
  • the annealing direction of the first annealing treatment is a direction perpendicular to the first surface pointing to the third surface
  • the depth of the first annealing treatment is not greater than the first depth
  • the first depth is a vertical distance between the first surface and the third surface.
  • the first depth is the thickness of the cured film; when other film layers are provided between the cured film and the light-emitting layer, the first depth is the sum of the thickness of the cured film and the total thickness of all film layers between the cured film and the light-emitting layer.
  • the prefabricated device further includes a bottom electrode, which is located on a side of the light-emitting layer away from the functional layer
  • the method for preparing the optoelectronic device further includes the steps of: forming a top electrode on a side of the functional layer away from the light-emitting layer, one of the bottom electrode and the top electrode being an anode and the other being a cathode.
  • the top electrode In the direction from the light-emitting layer to the top electrode, the top electrode includes a fifth face and a sixth face that are relatively arranged, and the fifth face is closer to the functional layer than the sixth face.
  • the method for preparing the optoelectronic device further includes the steps of: performing a second annealing treatment with a controllable annealing depth on the functional layer and the top electrode, the annealing direction of the second annealing treatment being a vertical direction from the sixth face to the third face, the depth of the second annealing treatment being no greater than the second depth, and the second depth being the vertical distance between the sixth face and the third face.
  • the second annealing treatment refers to the description of the first annealing treatment.
  • the second depth is the sum of the thickness of the top electrode and the thickness of the functional layer.
  • the second depth is the sum of the thickness of all film layers between the light-emitting layer and the functional layer and/or the thickness of all film layers between the functional layer and the top electrode, the thickness of the top electrode, and the thickness of the functional layer.
  • the bottom electrode is an anode and the top electrode is a cathode.
  • a hole functional layer may be provided between the bottom electrode and the light-emitting layer.
  • the hole functional layer includes but is not limited to a hole injection layer and/or a hole transport layer.
  • the corresponding functional layer is an electronic functional layer.
  • the electronic functional layer includes but is not limited to an electron transport layer or an electron injection layer.
  • the photoelectric device is an inverted structure
  • the bottom electrode is a cathode and the top electrode is an anode.
  • An electronic functional layer may be provided between the bottom electrode and the light-emitting layer.
  • the corresponding functional layer is a hole functional layer.
  • the prefabricated device may also include a substrate.
  • the substrate is provided on the side of the bottom electrode away from the light-emitting layer.
  • the material of the substrate may be a rigid material or a flexible material.
  • the light-emitting layer is a quantum dot light-emitting layer, which includes a plurality of stacked quantum dot layers, and the thickness of each quantum dot layer is the average particle size of the quantum dots contained therein, wherein the plurality of stacked quantum dot sublayers include a first quantum dot sublayer and an Nth quantum dot sublayer, N is a positive integer greater than or equal to two, and among the plurality of stacked quantum dot sublayers, the first quantum dot sublayer is closest to the functional layer, and the Nth quantum dot sublayer is farthest from the functional layer.
  • the light-emitting layer 13 includes a first quantum dot layer 131, a second quantum dot layer 132 and a third quantum dot layer 133 which are stacked in sequence, wherein the third quantum dot layer 133 is closer to the bottom electrode 11 than the first quantum dot layer 131; the material of the first quantum dot layer 131 is the first quantum dot, and the thickness of the first quantum dot layer 131 is the average particle size of the first quantum dot; the material of the second quantum dot layer 132 is the second quantum dot, and the thickness of the second quantum dot layer 132 is the average particle size of the second quantum dot; the material of the third quantum dot layer 133 is the third quantum dot, and the thickness of the third quantum dot layer 133 is the average particle size of the third quantum dot.
  • the thickness of the light-emitting layer is 15nm to 30nm
  • the thickness of each quantum dot layer is 5nm to 12nm, for example, it can be 5nm to 7nm, 7nm to 9nm, 9nm to 11nm, or 11nm to 12nm
  • the thickness of each quantum dot layer is 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, or 12nm.
  • the thickness of each quantum dot layer can be different from each other, or the thickness of at least some quantum dot layers can be the same as each other.
  • the annealing direction of the first annealing treatment is the vertical direction from the first surface to the first quantum dot sublayer, and the depth of the first annealing treatment is not greater than the third depth; the third depth is the sum of the vertical spacing between the first surface and the third surface, and the thickness of the first quantum dot sublayer.
  • the third depth is the sum of the thickness of the functional layer and the thickness of the first quantum dot sublayer; when other film layers are provided between the functional layer and the light-emitting layer, the third depth is the sum of the thickness of all film layers between the functional layer and the light-emitting layer, the thickness of the functional layer, and the thickness of the first quantum dot sublayer.
  • the functional layer 100 is formed on the side of the light-emitting layer 13 away from the bottom electrode 11, and the functional layer 100 is in direct contact with the light-emitting layer 13.
  • the functional layer 100 includes a first surface 1011 and a second surface 1012 arranged opposite to each other, and the second surface 1012 is closer to the light-emitting layer 13 than the first surface 1011.
  • the annealing direction of the first annealing is the vertical direction F1 from the first surface 1011 to the first quantum dot layer 131, and the annealing depth of the functional layer 100 is not greater than the third depth H1.
  • the third depth H1 is the sum of the thickness D1 of the functional layer 100 and the thickness D2 of the first quantum dot layer 131.
  • the annealing depth of the functional layer 100 can be, for example, D1, and the annealing depth of the functional layer 100 can be, for example, H1.
  • the functional layer 100 is composed of a first film layer 101 and a second film layer 102 that are stacked, the first film layer 101 is closer to the light-emitting layer 13 than the second film layer 102, and the method of performing a first annealing treatment with a controllable depth on the first film layer 101 can refer to the above example; in the step of performing a first annealing treatment with a controllable depth on the second film layer 102, the annealing direction of the second film layer 102 is a vertical direction F2 in which a side of the second film layer 102 away from the first film layer 101 points to the first quantum dot layer 131, and the annealing depth of the second film layer 102 is not greater than the sum of the thickness D1 of the first film layer 101, the thickness D3 of the second film layer 102, and the thickness D2 of the first quantum dot layer 131.
  • the annealing depth of the second film layer 102 can be, for example, the sum of D1, D2 and D3, and the annealing depth of the second film layer 102 can be, for example, the sum of D1 and D3, and the annealing depth of the second film layer 102 can be, for example, D3. It is understandable that only the first film layer 101 may be subjected to a first annealing treatment with a controllable depth, and the second film layer 102 may be prepared by a conventional method.
  • the method for preparing the optoelectronic device further includes the steps of: A top electrode is formed on the side of the functional layer away from the light-emitting layer, one of the bottom electrode and the top electrode is an anode, and the other is a cathode. In the direction from the light-emitting layer to the top electrode, the top electrode includes a fifth face and a sixth face that are arranged opposite to each other, and the fifth face is closer to the functional layer than the sixth face.
  • the method for preparing the optoelectronic device also includes the steps of: performing a second annealing treatment with a controllable annealing depth on the functional layer and the top electrode, the annealing direction of the second annealing treatment is the vertical direction from the sixth face to the third face, and the depth of the second annealing treatment is not greater than the fourth depth; the fourth depth is the sum of the vertical spacing between the sixth face and the third face, and the thickness of the first quantum dot sublayer.
  • the fourth depth is the sum of the thickness of the top electrode, the thickness of the functional layer and the thickness of the first quantum dot sublayer.
  • the fourth depth is the sum of the thickness of all film layers between the light-emitting layer and the functional layer and/or the thickness of all film layers between the functional layer and the top electrode, the thickness of the top electrode, the thickness of the functional layer and the thickness of the first quantum dot sublayer.
  • the functional layer 100 is formed on the side of the light-emitting layer 13 away from the bottom electrode 11, and the top electrode 12 is formed on the side of the functional layer 100 away from the light-emitting layer 13.
  • the top electrode 12 includes a fifth surface 121 and a sixth surface 122 arranged opposite to each other, and the fifth surface 121 is closer to the functional layer 100 than the sixth surface 122.
  • the annealing direction of the second annealing treatment is the vertical direction F3 from the sixth surface 122 to the first quantum dot layer 131.
  • the annealing depth of the second annealing treatment is not greater than the fourth depth H2, and the fourth depth H2 is the sum of the thickness D1 of the functional layer 100, the thickness D4 of the top electrode 12, and the thickness D2 of the first quantum dot layer 131.
  • the annealing depth of the second annealing treatment can be, for example, the sum of D1 and D4.
  • the annealing depth of the second annealing treatment can also be, for example, the sum of D1, D2, and D4.
  • the first annealing treatment may not be performed and only the second annealing treatment may be performed; or the second annealing treatment may not be performed and only the first annealing treatment may be performed.
  • the functional layer 100 is composed of a first film layer 101 and a second film layer 102 that are stacked, the first film layer 101 is closer to the light-emitting layer 13 than the second film layer 102, in the step of performing a second annealing treatment with a controllable annealing depth on the functional layer 100 and the top electrode 12, in the step of performing a second annealing treatment with a controllable annealing depth on the functional layer 100 and the top electrode 12, the top electrode 12 includes a fifth surface 121 and a sixth surface 122 that are relatively arranged, the fifth surface 121 is closer to the functional layer 100 than the sixth surface 122, the annealing direction of the second annealing treatment is the vertical direction F4 from the sixth surface 122 to the first quantum dot layer 131, the annealing depth of the second annealing treatment is not greater than the fourth depth H2, and the fourth depth H2 is the sum of the thickness D2 of the first quantum dot layer 131, the thickness
  • the material of each film layer is a metal oxide arranged in a single layer, and the thickness of each film layer is the average particle size of the metal oxide contained.
  • the thickness of the functional layer can be 7nm to 70nm, for example, 7nm to 10nm, 10nm to 20nm, 20nm to 30nm, 30nm to 40nm, 40nm to 50nm, 50nm to 60nm, or 60nm to 70nm, exemplified by 7nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm or 70nm.
  • the average particle size of the metal oxide is 2nm to 100nm, for example, it can be 2nm to 10nm, 10nm to 20nm, 20nm to 30nm, 30nm to 40nm, 40nm to 50nm, 50nm to 60nm, 60nm to 0nm, 70nm to 80nm, 80nm to 90nm, or 90nm to 100nm.
  • the optoelectronic device is of an upright structure
  • the functional layer is an electronic functional layer
  • the material of the functional layer is selected from at least one of ZnO, TiO 2 , SnO 2 , BaO, Al 2 O 3 , Ta 2 O 3 , ZrO 2 , TiLiO, ZnGaO, ZnAlO, ZnMgO, ZnSnO, ZnLiO, InSnO, AlZnO, ZnOCl, ZnOF or ZnMgLiO.
  • the optoelectronic device is an inverted structure
  • the functional layer is a hole functional layer
  • the material of the functional layer is selected from poly (9,9-dioctylfluorene-CO-N-(4-butylphenyl) diphenylamine), 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), poly [bis (4-phenyl) (4-butylphenyl) amine], poly (N, N'-di (4-butylphenyl) -N, N'-diphenyl-1,4-phenylenediamine-CO-9,9-dioctylfluorene), 4,4',4"-tri(carbazole-9-yl)triphenylamine, 4,4'-di(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-b
  • the embodiments of the present application also provide a photoelectric device, which is prepared by any one of the preparation methods described in the embodiments of the present application.
  • the photoelectric device 1 is a positive structure, and the photoelectric device 1 includes a bottom electrode 11, a top electrode 12, a light-emitting layer 13 and an electronic functional layer 14.
  • the bottom electrode 11 and the top electrode 12 are arranged opposite to each other, the bottom electrode 11 is an anode and the top electrode 12 is a cathode, the light-emitting layer 13 is arranged between the bottom electrode 11 and the top electrode 12, and the electronic functional layer 14 is arranged between the top electrode 12 and the light-emitting layer 13.
  • the materials of the bottom electrode 11 and the top electrode 12 are independently selected from at least one of a metal, a carbon material or a metal oxide
  • the metal is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca or Mg
  • the carbon material is selected from at least one of graphite, carbon nanotubes, graphene or carbon fiber
  • the metal oxide can be a doped or undoped metal oxide, for example, selected from at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) or magnesium-doped zinc oxide (MZO).
  • the bottom electrode 11 or the top electrode 12 may also be selected from a composite electrode of metal sandwiched between doped or undoped transparent metal oxides, the composite electrode including but not limited to at least one of AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO 2 /Ag/TiO 2 , TiO 2 /Al/TiO 2 , ZnS/Ag/ZnS, ZnS/Al/ZnS, TiO 2 /Ag/TiO 2 or TiO 2 /Al/TiO 2.
  • the thickness of the bottom electrode 11 may be, for example, 20 nm to 200 nm
  • the thickness of the top electrode 12 may be, for example, 20 nm to 200 nm.
  • the electronic functional layer 14 can be a single-layer structure or a stacked structure.
  • the electronic functional layer 14 is, for example, a single-layer structure, and the electronic functional layer 14 is an electron injection layer or an electron transport layer.
  • the electronic functional layer 14 is the functional layer in the above-mentioned preparation method.
  • the electronic functional layer 14 is a stacked structure, and the electronic functional layer 14 is composed of a stacked electron injection layer and an electron transport layer, the electron injection layer is closer to the top electrode 12 than the electron transport layer, and the electron transport layer is closer to the light-emitting layer 13 than the electron injection layer.
  • the electron transport layer is the functional layer in the above-mentioned preparation method.
  • the material of the electron injection layer includes but is not limited to at least one of alkali metal halides, alkali metal organic complexes or organic phosphine compounds, alkali metal halides include but are not limited to LiF, alkali metal organic complexes include but are not limited to 8-hydroxyquinoline lithium, and organic phosphine compounds include but are not limited to at least one of organic phosphorus oxides, organic thiophosphine compounds or organic selenophosphine compounds.
  • the material of the electron transport layer includes, but is not limited to, metal oxides, and the metal oxides include, but are not limited to, at least one of ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , ZrO 2 , TiLiO, ZnGaO, ZnAlO, ZnMgO, ZnSnO, ZnLiO, InSnO, AlZnO, ZnOCl, or ZnOF.
  • the doped metal oxides the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element, for example: ZnMgO only indicates that it is composed of three elements: Zn, Mg, and O.
  • the average particle size of the metal oxide can be, for example, 2 nm to 15 nm, exemplified by 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, or 15 nm.
  • the photoelectric device 1 also includes a hole functional layer 15 , and the hole functional layer 15 is arranged between the bottom electrode 11 and the light-emitting layer 13 .
  • the hole functional layer 15 may be a single layer structure or a stacked layer structure.
  • the hole functional layer 15 is a single layer structure, and the hole functional layer 15 is a hole injection layer or a hole transport layer.
  • the hole functional layer is a stacked layer structure, and the hole functional layer 15 is composed of a stacked hole injection layer and a hole transport layer, the hole injection layer is closer to the bottom electrode than the hole transport layer, and the hole transport layer is closer to the light-emitting layer than the hole injection layer.
  • the material of the hole injection layer is, but is not limited to, at least one of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4'-tris[2-naphthylphenylamino]triphenylamine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, transition metal oxides or transition metal sulfide compounds, wherein the transition metal oxide is selected from NiO x , At least one of MoOx , WOx , CrOx and CuOx ; and the transition metal sulfide compound
  • the materials of the hole transport layer include, but are not limited to, poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB, CAS No. 220797-16-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (PVK, CAS No. 25067-59-8), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD, CAS No.
  • poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene) (PFB, CAS
  • the invention can be selected from the group consisting of at least one of 4,4',4"-tris(carbazole-9-yl)triphenylamine (TCTA, CAS No. 139092-78-7), 4,4'-di(9-carbazole)biphenyl (CBP, CAS No.
  • N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine TPD, CAS No. 65181-78-4
  • N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine NBP, CAS No. 123847-85-8
  • the photoelectric device is an inverted structure, as shown in Figure 6, the photoelectric device includes a bottom electrode 11, a top electrode 12, a light-emitting layer 13 and a hole functional layer 15, the bottom electrode 11 and the top electrode 12 are arranged opposite to each other, the bottom electrode 11 is a cathode and the top electrode 12 is an anode, the light-emitting layer 13 is arranged between the bottom electrode 11 and the top electrode 12, and the hole functional layer 15 is arranged between the top electrode 12 and the light-emitting layer 13.
  • the structural composition of the bottom electrode 11, the top electrode 12, the light-emitting layer 13 and the hole functional layer 15 can refer to the above description.
  • the hole functional layer 15 is, for example, a single-layer structure, and the hole functional layer 15 is a hole injection layer or a hole transport layer.
  • the hole functional layer 15 is the functional layer in the above preparation method.
  • the hole functional layer 15 is a stacked structure, and the hole functional layer 15 is composed of a stacked hole injection layer and a hole transport layer.
  • the hole transport layer is the functional layer in the above preparation method.
  • the photoelectric device 1 further includes an electronic functional layer 14, and the electronic functional layer 14 is disposed between the top electrode 12 and the light-emitting layer 13.
  • the structural composition of the electronic functional layer 14 is described above.
  • the optoelectronic device is of an upright structure or an inverted structure, during the preparation of the optoelectronic device, at least the film layer located on the side of the light-emitting layer away from the bottom electrode and in direct contact with the light-emitting layer is fully annealed using an annealing process with a controllable annealing depth.
  • the present application also provides an electronic device, which includes an optoelectronic device prepared by any one of the preparation methods described in the present application.
  • the electronic device can be, for example, any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.
  • VR virtual reality
  • the present embodiment provides a photoelectric device and a preparation method thereof, wherein the photoelectric device is a quantum dot light emitting diode of an upright structure, as shown in FIG7 , in a direction from bottom to top, the photoelectric device 1 comprises a substrate 10, a bottom electrode 11, a hole functional layer 15, a light emitting layer 13, an electron functional layer 14 and a top electrode 12 which are stacked in sequence, wherein the bottom electrode 11 is an anode, the top electrode 12 is a cathode, the hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 which are stacked, the hole injection layer 151 is closer to the bottom electrode 11 than the hole transport layer 152, the hole transport layer 152 is closer to the light emitting layer 13 than the hole injection layer 151, and the electron functional layer 14 is an electron transport layer.
  • the materials and thicknesses of the various layers in the optoelectronic device 1 are as follows:
  • the material of the substrate 10 is glass, and the thickness of the substrate 10 is 3 mm;
  • the material of the bottom electrode 11 is ITO, and the thickness of the bottom electrode 11 is 15 nm;
  • the material of the top electrode 12 is Ag, and the thickness of the top electrode 12 is 20 nm;
  • the light-emitting layer 13 is composed of a first quantum dot layer 131, a second quantum dot layer 132 and a third quantum dot layer 133 which are stacked in sequence.
  • the first quantum dot layer 131 is closer to the electronic functional layer 14 than the third quantum dot layer 133.
  • the material of the first quantum dot layer 131 is the first quantum dot
  • the material of the second quantum dot layer 132 is the second quantum dot
  • the material of the third quantum dot layer 133 is the third quantum dot.
  • the first quantum dot, the second quantum dot and the third quantum dot are all the same, that is, they are all CdS quantum dots, the luminescent color is green, and the particle size is 10 nm.
  • the thickness of the corresponding first quantum dot layer 131, the second quantum dot layer 132 and the third quantum dot layer 133 are all 10 nm
  • the thickness of the light-emitting layer 13 is 30 nm.
  • the material of the hole injection layer 151 is PEDOT:PSS, and the thickness of the hole injection layer 151 is 65 nm;
  • the material of the hole transport layer 152 is TFB, and the thickness of the hole transport layer 152 is 25 nm;
  • the material of the electronic functional layer 14 is ZnO with an average particle size of 10 nm, and the thickness of the electronic functional layer 14 is 50 nm.
  • S1.1 Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including a bottom electrode (anode);
  • a ZnO-ethanol solution with a concentration of 30 mg/mL is inkjet printed on the side of the light-emitting layer away from the hole transport layer, and then placed in a vacuum environment of 10 -2 Mpa for 15 minutes to obtain a 50 nm electronic functional layer;
  • the electronic functional layer is treated with an atomic layer annealing process, that is, the top electrode and the electronic functional layer are bombarded with argon plasma.
  • the average power of the argon plasma bombardment is 260 W
  • the number of bombardments is 20 times
  • the time of each bombardment is 0.01 s
  • each bombardment is naturally cooled for 20 s (that is, the time interval between adjacent bombardments is 20 s).
  • the depth of each bombardment is the sum of the thickness of the top electrode (20 nm) and the thickness of the electronic functional layer (50 nm) (70 nm), and then epoxy resin is used for encapsulation to obtain a photoelectric device.
  • This embodiment provides a photoelectric device and a method for preparing the same.
  • the structure and composition of the photoelectric device in this embodiment are the same as those in Embodiment 1.
  • step S1.5 is replaced by "in an environment where the water oxygen content is less than 0.1ppm, a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the light-emitting layer away from the hole transport layer, and then placed in a vacuum environment of 10-2 Mpa for 15 minutes to obtain a 50nm electronic functional layer, and then the electronic functional layer is treated with an atomic layer annealing process, that is, the electronic functional layer is bombarded with argon plasma, the average power of the argon plasma bombardment is 150W, the number of bombardments is 20 times, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is the thickness of the electronic functional layer (50nm)", and step S1.7 is omitted, and packaging is performed
  • This embodiment provides a photoelectric device and a method for preparing the same.
  • the structure and composition of the photoelectric device in this embodiment are the same as those in Embodiment 1.
  • Step S1.7 is replaced by "using an atomic layer annealing process to treat the electronic functional layer, that is, using argon plasma to bombard the top electrode, the electronic functional layer and the first quantum dot layer, the average power of the argon plasma bombardment is 300W, the number of bombardments is 20 times, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s).
  • the depth of each bombardment is the sum of the thickness of the top electrode (20nm), the thickness of the electronic functional layer (50nm) and the thickness of the first quantum dot layer (10nm) (80nm), and then epoxy resin encapsulation is performed to obtain a photoelectric device.”
  • This embodiment provides a photoelectric device and a method for preparing the same.
  • the structure and composition of the photoelectric device in this embodiment are the same as those in Embodiment 1.
  • step S1.5 is replaced by "in an environment where the water oxygen content is less than 0.1ppm, a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the light-emitting layer away from the hole transport layer, and then placed in a vacuum environment of 10-2 Mpa for 15 minutes to obtain a 50nm electronic functional layer, and then the electronic functional layer is treated with an atomic layer annealing process, that is, the electronic functional layer and the first quantum dot layer are bombarded with argon plasma, the average power of the argon plasma bombardment is 200W, the number of bombardments is 20 times, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is the sum of the thickness of the electronic functional layer (50nm) and the thickness of
  • the present embodiment provides a photoelectric device and a preparation method thereof, as shown in FIG8 , compared with the photoelectric device in Example 1, the difference of the photoelectric device in the present embodiment is only that: the electronic functional layer 14 is composed of a first ZnO atomic layer 141, a second ZnO atomic layer 142, a third ZnO atomic layer 143, a fourth ZnO atomic layer 144 and a fifth ZnO atomic layer 145 which are stacked in sequence, the first ZnO atomic layer 141 is closer to the top electrode 12 than the fifth ZnO atomic layer 145, the fifth ZnO atomic layer 145 is closer to the light-emitting layer 13 than the first ZnO atomic layer 141, the material of the first ZnO atomic layer 141 to the fifth ZnO atomic layer 145 are all ZnO with a particle size of 10 nm, and the thickness of each ZnO atomic layer is 10 nm.
  • step S5.1 refer to step S1.1;
  • step S5.2 refer to step S1.2;
  • step S5.3 refer to step S1.3;
  • a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the light-emitting layer away from the hole transport layer, and then placed in a vacuum environment of 10-2 Mpa for 15min to obtain a fifth ZnO atomic layer of 10nm, and then the fifth ZnO atomic layer is treated by an atomic layer annealing process, that is, the fifth ZnO atomic layer and the first quantum dot layer are bombarded with argon plasma, the average power of the argon plasma bombardment is 50W, the number of bombardments is 20, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is the sum of the thickness of the fifth ZnO atomic layer (10nm) and the thickness of the first quantum dot layer (10nm) (20nm);
  • a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the fifth ZnO atomic layer away from the light-emitting layer, and then placed in a vacuum environment of 10-2 Mpa for 15min to obtain a 10nm fourth ZnO atomic layer, and then the fourth ZnO atomic layer is treated by an atomic layer annealing process, that is, the fifth ZnO atomic layer, the fourth ZnO atomic layer and the first quantum dot layer are bombarded with argon plasma, the average power of the argon plasma bombardment is 80W, the number of bombardments is 20, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is 30nm;
  • a ZnO-ethanol solution with a concentration of 30 mg/mL is inkjet printed on the side of the fourth ZnO atomic layer away from the fifth ZnO atomic layer, and then placed in a vacuum environment of 10 -2 Mpa for 15 minutes to obtain a third ZnO atomic layer of 10 nm.
  • the third ZnO atomic layer is then treated with an atomic layer annealing process, that is, argon plasma is used to bombard the third ZnO atomic layer to the fifth ZnO atomic layer and the first quantum dot layer.
  • the argon plasma The average power of the bombardment was 110 W, the number of bombardments was 20, the duration of each bombardment was 0.01 s, and after each bombardment treatment, the substrate was naturally cooled for 20 s (i.e., the time interval between adjacent bombardments was 20 s). The depth of each bombardment was 40 nm.
  • a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the third ZnO atomic layer away from the fourth ZnO atomic layer, and then placed in a vacuum environment of 10-2 Mpa for 15min to obtain a 10nm second ZnO atomic layer, and then the second ZnO atomic layer is treated by an atomic layer annealing process, that is, the second ZnO atomic layer to the fifth ZnO atomic layer and the first quantum dot layer are bombarded with argon plasma, the average power of the argon plasma bombardment is 150W, the number of bombardments is 20, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is 50nm;
  • a ZnO-ethanol solution with a concentration of 30mg/mL is inkjet printed on the side of the second ZnO atomic layer away from the third ZnO atomic layer, and then placed in a vacuum environment of 10-2 Mpa for 15min to obtain a first ZnO atomic layer of 10nm, and then the first ZnO atomic layer is treated by an atomic layer annealing process, that is, the first ZnO atomic layer to the fifth ZnO atomic layer and the first quantum dot layer are bombarded with argon plasma, the average power of the argon plasma bombardment is 200W, the number of bombardments is 20, the time of each bombardment is 0.01s, and each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s), and the depth of each bombardment is 60nm;
  • the average power of argon plasma bombardment is 300W
  • the number of bombardments is 20 times
  • the time of each bombardment is 0.01s
  • each bombardment treatment is naturally cooled for 20s (that is, the time interval between adjacent bombardments is 20s).
  • the depth of each bombardment is the sum of the thickness of the top electrode (20nm), the total thickness of the electronic functional layer (50nm) and the thickness of the first quantum dot layer (10nm) (80nm), and then epoxy resin encapsulation is performed to obtain a photoelectric device.
  • This embodiment provides a photoelectric device and a method for preparing the same.
  • the structure and composition of the photoelectric device in this embodiment are the same as those in Embodiment 1.
  • the preparation method of this example is different only in that step S1.7 is replaced by "using a continuous electron beam annealing process to treat the electronic functional layer, the annealing time is 0.01 s, the acceleration voltage of the electron beam is 221 kV, the average power of the electron beam is 2 ⁇ 10 3 W/cm 2 , and then epoxy resin encapsulation is performed to obtain the optoelectronic device".
  • This embodiment provides a photoelectric device and a method for preparing the same.
  • the structure and composition of the photoelectric device in this comparative example are the same as those in Example 1.
  • step S1.5 is replaced by "in an environment where the water oxygen content is less than 0.1 ppm, inkjet print a ZnO-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer, and then place it in a vacuum environment of 10-2 Mpa and let it stand for 15 minutes", and step S1.7 is omitted, and packaging is performed after the top electrode is prepared.
  • the performance of the optoelectronic devices of Examples 1 to 6 and the comparative examples was tested, and the start-up voltage, current, brightness, luminescence spectrum and other parameters of each optoelectronic device were obtained by measuring the optical property of each optoelectronic device using FPD optical property measuring equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 ⁇ m, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc.). Then, key parameters such as external quantum efficiency and power efficiency were calculated, and the service life of each of the above-mentioned optoelectronic devices was tested using life test equipment.
  • FPD optical property measuring equipment including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 ⁇ m, device
  • the test method for service life is as follows: under the drive of constant current (2mA), a 128-channel QLED life test system is used to perform electroluminescent life analysis on each optoelectronic device, and the time required for each optoelectronic device to decay from the maximum brightness to 95% (T95, h) is recorded. The time required for the brightness of each optoelectronic device to decay from 100% to 95% at a brightness of 1000nit is calculated through the attenuation fitting formula (T95@1000nit, h).
  • the optoelectronic performance and service life of the optoelectronic devices in Examples 1 to 6 have significant advantages.
  • the L max of the optoelectronic device in Example 5 is twice that of the optoelectronic device in the comparative example
  • the T95 of the optoelectronic device in Example 5 is 2.4 times that of the optoelectronic device in the comparative example
  • the T95@1000nit of the optoelectronic device in Example 5 is 7.7 times that of the T95@1000nit of the optoelectronic device in the comparative example
  • the CE max of the optoelectronic device in Example 5 is 1.4 times that of the CE max of the optoelectronic device in the comparative example.
  • a functional wet film is first prepared by a solution method, and then a vacuum drying treatment is performed to form a solid functional layer, and an annealing process with controllable annealing depth is used to treat the solid functional layer.
  • This can not only avoid the adverse effects of the annealing process on the performance of the light-emitting layer, but also ensure that the solid functional layer is fully annealed, effectively improving the adverse effects of traditional annealing methods (heat treatment or vacuum drying treatment) on the performance of optoelectronic devices, and improving the optoelectronic performance and service life of optoelectronic devices.
  • the reason may be that not only the electronic functional layer is fully annealed to effectively reduce the defects of the electronic functional layer, but also the interface between the electronic functional layer and the top electrode is fully annealed, which is beneficial to improving the ohmic contact between the electronic functional layer and the top electrode, and can reduce the electron injection barrier and improve the electron injection level.
  • the comprehensive performance of the optoelectronic devices in Examples 3 and 4 is better than that of the optoelectronic devices in Examples 1 and 2, which shows that: compared with the annealing depth being the vertical distance between the side of the top electrode away from the light-emitting layer and the light-emitting layer close to the electronic functional layer, the annealing depth is the sum of the vertical distance between the side of the top electrode away from the light-emitting layer and the light-emitting layer close to the electronic functional layer and the thickness of the first quantum dot layer, which can further improve the comprehensive performance of the optoelectronic device.
  • the reason may be that: in QLED, since the electron injection level is generally greater than the hole injection level, a quantum dot layer (first quantum dot layer) of the light-emitting layer close to the electronic functional layer is not in the region where electron-hole recombination forms excitons.
  • controlling the annealing depth to the first quantum dot layer can fully process the interface between the electronic functional layer and the light-emitting layer and the electronic functional layer, and has the effect of promoting the diffusion of part of the first quantum dots and part of the ZnO, thereby effectively reducing the energy level gradient; in addition, the injection barrier between the cathode and the electronic functional layer is not Under the premise of change, electrons are more easily injected from the electronic functional layer to the light-emitting layer, which reduces the degree of charge accumulation caused by excessive electron injection, thereby improving the phenomenon of "excessive charge accumulation".
  • the comprehensive performance of the optoelectronic devices in Examples 1 to 5 is better than the comprehensive performance of the optoelectronic device in Example 6. It can be seen that: compared with the electron beam annealing process for treating the electronic functional layer, the atomic layer annealing process for treating the electronic functional layer can further improve the comprehensive performance of the optoelectronic device. The reason is that: the atomic layer annealing process can accurately adjust the annealing depth to the nanometer level.
  • the electronic functional layer and the light-emitting layer are respectively formed by superposition of multiple atomic layers, and the thickness of a single atomic layer is nanometer level, so the atomic layer annealing process can improve the annealing accuracy, and the film layer treated by the atomic layer annealing process has a higher density, for example, the film layer density can be increased by 10% to 15%; in addition, the atomic layer annealing process for treating the electronic functional layer can improve the undesirable crystal phase of ZnO in the electronic functional layer, and make the arrangement of ZnO more orderly.

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Abstract

本申请公开一种光电器件的制备方法、光电器件与电子设备，所述光电器件的制备方法包括步骤：提供预制器件，所述预制器件包括固化的功能层，其中，功能层包括一个或多个膜层，对至少一个膜层进行可控退火深度的第一退火处理，有效避免退火工艺对下层膜的性能造成不利影响，并且确保膜层充分退火以提高膜层的性能。

Description

光电器件的制备方法、光电器件与电子设备
本申请要求于2022年11月9日在中国专利局提交的、申请号为202211398932.7、申请名称为“光电器件的制备方法、光电器件与电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光电技术领域，具体涉及一种光电器件的制备方法、光电器件与电子设备。
背景技术
光电器件是指利用半导体的光电效应或热电效应制成的一类器件，包括但不限于是光电池、光电器件等。以发光器件为例，有机发光二极管(Organic Light-Emitting Diode,OLED)和量子点发光二极管(Quantum Dot Light Emitting Diodes,QLED)均属于发光器件，OLED或QLED具有类似“三明治”的结构，即包括阳极、阴极以及发光层，其中，阳极与阴极相对设置，发光层设置于阳极与阴极之间。发光器件的发光原理是：电子从器件的阴极注入至发光区，空穴从器件的阳极注入至发光区，电子和空穴在发光区复合形成激子，复合后的激子通过辐射跃迁的形式释放光子，从而发光。
技术问题
目前，在光电器件的制备过程中，至少部分功能层的的制备工艺不能涉及高温(高于40℃)，尤其是当下层功能层的材料为热敏性材料时，导致功能层的性能不佳，从而对光电器件的工作性能造成负面影响。
技术解决方案
鉴于此，本申请提供了一种光电器件的制备方法、光电器件与电子设备，以改善功能层的制备工艺对光电器件性能的不利影响。
第一方面，本申请提供了一种光电器件的制备方法，包括如下步骤：
提供预制器件，所述预制器件包括固化的功能层；
其中，所述功能层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
第二方面，本申请提供了一种光电器件，所述光电器件为正置型结构，所述光电器件包括：
相对设置的底电极和顶电极；
发光层，设置于底电极与顶电极之间；以及
电子功能层，设置于发光层与顶电极之间，所述电子功能层包括电子传输层；
其中，所述光电器件的制备方法包括如下步骤：
提供预制器件，所述预制器件包括固化的电子传输层；
其中，所述电子传输层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
第三方面，本申请提供了一种光电器件，所述光电器件为倒置型结构，所述光电器件包括：
相对设置的底电极和顶电极；
发光层，设置于底电极与顶电极之间；以及
空穴功能层，设置于发光层与顶电极之间，所述空穴功能层包括空穴传输层；
其中，所述光电器件的制备方法包括如下步骤：
提供预制器件，所述预制器件包括固化的空穴传输层；
其中，所述空穴传输层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
有益效果
在所述光电器件的制备方法中，功能层中的至少一个膜层经可控退火深度的第一退火处理，有效避免退火工艺对下层膜的性能造成不利影响，尤其是下层膜的材料为热敏材料，并且确保膜层充分退火以提高膜层的性能。相较于常规方法制得的光电器件，采用所述光电器件的制备方法制得的光电器件的光电性能和使用寿命更佳，最大亮度、最大电流效率以及器件寿命显著提升。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例中提供的第一种功能层退火方式的示意图。
图2为本申请实施例中提供的第二种功能层退火方式的示意图。
图3为本申请实施例中提供的第三种功能层退火方式的示意图。
图4为本申请实施例中提供的第四种功能层退火方式的示意图。
图5为本申请实施例中提供的第一种光电器件的结构示意图。
图6为本申请实施例中提供的第二种光电器件的结构示意图。
图7为本申请实施例中提供的第三种光电器件的结构示意图。
图8为本申请实施例中提供的第四种光电器件的结构示意图。
本申请的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请实施例提供一种量子点发光层及其制备方法和量子点发光二极管器件。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。用语第一、第二、第三等仅仅作为标示使用，并没有强加数字要求或建立顺序。本发明的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本发明范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所数范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。
在本申请中，术语“包括”是指“包括但不限于”。
术语“和/或”用于描述关联对象的关联关系，表示可以存在三种关系，例如，“A和/或B”可以表示三种情况：第一种情况是单独存在A；第二种情况是同时存在A和B；第三种情况是单独存在B的情况，其中，A和B分别可以是单数或者复数。
术语“至少一种”是指一种或多种，“多种”是指两种或两种以上。术语“至少一个”、“以 下至少一项(个)”或其类似表达，指的是这些项中的任意组合，包括单项(个)或复数项(个)的任意组合。例如，“a、b或c中的至少一项(个)”或“a,b和c中的至少一项(个)”均可表示为：a、b、c、a-b(即a和b)、a-c、b-c或a-b-c，其中，a,b和c分别可以是单个或多个。
术语“A层形成于B层的一侧”、“A层形成于B层远离C层的一侧”或其类似描述可以表示为A层直接地形成于B层的一侧或B层远离C层的一侧，即A层与B层直接接触，或者表示为A层间接地形成于B层的一侧或B层远离C层的一侧，即A层与B层之间还可以形成有其他的间隔结构层。同理，“A层设置于B层的一侧”、“A层设置于B层远离C层的一侧”可以表示为A层与B层直接接触，或者表示为A层与B层之间还设有其他的间隔结构层；“A层设置于B层与C层之间”可以表示为A层与B层直接接触且A层与C层直接接触、或者A层与B层直接接触且A层与C层之间设有一个或多个间隔结构层、或者A层与B层之间设有一个或多个间隔结构层且A层与C层之间设有一个或多个间隔结构层、或者A层与B层设有一个或多个间隔结构层且A层与C层直接接触。
本申请实施例提供了一种光电器件的制备方法，光电器件包括但不限于是发光器件、光伏电池和光电探测器，包括步骤：提供预制器件，所述预制器件包括固化的功能层；其中，功能层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
在本申请实施例的制备方法中，功能层中的至少一个膜层经可控退火深度的第一退火处理，有效避免退火工艺对下层膜的性能造成不利影响，尤其是下层膜的材料为热敏材料，并且确保膜层充分退火以提高膜层的性能。
在本申请的一些实施例中，至少一个膜层的制备方法包括步骤：形成固化膜，对固化膜进行可控退火深度的第一退火处理。
在本申请的一些实施例中，预制器件包括热敏材料层，功能层形成于热敏材料层的一侧。可以理解的是，当功能层为单层结构时，即功能层仅由一个膜层组成，则功能层的制备方法包括步骤：形成固化膜，对固化膜进行可控退火深度的第一退火处理。当功能层为多层结构时，即功能层包括多个膜层，则多个膜层中至少最靠近热敏材料层的膜层的制备方法包括步骤：形成固化膜，对固化膜进行可控退火深度的第一退火处理。可以理解的是，当功能层包括多个膜层时，各个所述膜层的材料可以完全相同，也可以彼此不相同，还可以仅部分相同。
在本申请的一些实施例中，所述可控退火深度的第一退火处理可以是原子层退火处理、电子束退火处理或红外激光辐照处理。
在本申请的一些实施例中，第一退火处理选自原子层退火处理，对膜层进行可控退火深度的第一退火处理，包括步骤：采用氩等离子体轰击膜层。氩等离子体轰击的平均功率为50W至450W，例如为50W至100W、100W至150W、150W至200W、200W至250W、250W至300W、300W至350W、350W至400W、或者400W至450W。氩等离子体轰击的次数为1至20，例如为1至5、5至10、10至15、或者15至20。单次氩等离子体轰击的时间为0.01s至0.1s，例如为0.01s至0.03s、0.03s至0.05s、0.05s至0.07s、0.07s至0.09s、或者0.09s至0.1s。氩等离子体轰击的次数大于等于2时，相邻氩等离子体轰击的时间间隔为10s至30s。
在本申请的另一些实施例中，第一退火处理选自电子束退火处理，在对膜层进行可控退火深度的第一退火处理的步骤中，第一退火处理中电子束斑的平均功率为103W/cm2至104W/cm2，例如为103W/cm2至2×103W/cm2、2×103W/cm2至3×103W/cm2、3×103W/cm2至4×103W/cm2、4×103W/cm2至5×103W/cm2、5×103W/cm2至6×103W/cm2、6×103W/cm2至7×103W/cm2、7×103W/cm2至8×103W/cm2、8×103W/cm2至9×103W/cm2、或者9×103W/cm2至104W/cm2。电子束扫描固化膜的时间为0.01s至0.1s，例如为0.01s至0.03s、0.03s至0.05s、0.05s至0.07s、0.07s至0.09s、或者0.09s至0.1s。电子束的加速电压为100V至1000V，例如为 100V至300V、300V至500V、500V至700V、700V至1000V。
在本申请的另一些实施例中，第一退火处理选自红外激光辐照处理，红外激光辐照处理的工艺参数为：激光波长为1000nm至1064nm，脉冲宽度为100fs至120fs，重复频率为1kHz至1.5kHz，光束质量因子为1至1.2，激光扫描所述固化膜的时间为0.01s至0.1s。
在本申请的一些实施例中，所述形成固化膜的步骤包括如下步骤：
S1、沉积包含膜层的材料的溶液；
S2、对沉积的所述包含所述膜层的材料的溶液进行干燥处理，获得固化膜。
在步骤S1中，所述包含膜层的材料的溶液的沉积方法包括但不限于是旋涂、涂布、喷墨打印、刮涂、浸渍提拉、浸泡、喷涂、滚涂或浇铸中的至少一种。
在步骤S1中，所述膜层的材料包括但不限于是空穴注入材料、空穴传输材料、电子传输材料或电子注入材料。所述溶液的溶剂为能够使膜层的材料在其中分散性能良好的材料，例如可以是有机溶剂。以膜层的材料为金属氧化物为例，溶液的溶剂例如可以选自二甲基亚砜、甲醇、乙醇、乙二醇、丙三醇、异丙醇、丁醇、戊醇、辛醇、N-甲基甲酰胺、N,N-二甲基甲酰胺、N-甲基吡咯烷酮、2-甲氧基乙醇、2-乙氧基乙醇或2-甲氧基丁醇中的至少一种。
为了提高膜层的成膜质量，在本申请的一些实施例中，所述溶液中膜层的材料的浓度为20mg/mL至80mg/mL，例如为20mg/mL、30mg/mL、40mg/mL、50mg/mL、60mg/mL、70mg/mL、或者80mg/mL。
在步骤S2中，“干燥处理”包括所有能使沉积的所述包含所述膜层的材料的溶液得更高能量而固化成膜的工序，并且不涉及高温热处理工序，高温是指温度高于80℃。干燥处理例如可以是真空干燥处理，真空干燥处理的真空度例如为10-2Mpa至10-7Mpa，真空干燥处理的时间例如为10min至60min。在本申请的至少一个实施例中，真空干燥处理的真空度为10-2Mpa，真空干燥时间为15min。干燥处理又如还可以是低温热处理，低温热处理的温度为20℃至40℃，低温热处理的时间例如为5min至60min。
需要说明的是，在完成上述干燥处理之后，膜层的退火并不充分，若不进行进一步地可控深度退火处理，则膜层的性能不佳。膜层为电子传输层为例，电子传输层若退火不充分，会导致电子传输层的导电性能下降，使得包含电子传输层的器件在运作过程中会出现异常的电荷累积现象，严重时器件的多个膜层均出现异常的电荷累积现象，并且异常的电荷累积现象无法通过有效手段消除，从而器件的性能和使用寿命造成不利影响。
在本申请的一些实施例中，预制器件还包括发光层，发光层的材料属于热敏材料，功能层形成于发光层的一侧。沿着发光层指向功能层的方向上，单个膜层包括相对设置的第一面和第二面，第二面较第一面更靠近发光层，发光层包括相对设置的第三面和第四面，第三面较第四面更靠近功能层。发光层的材料例如选自有机发光材料或量子点，发光层的厚度例如可以为15nm至30nm。
其中，有机发光材料包括但不限于是二芳香基蒽衍生物、二苯乙烯芳香族衍生物、芘衍生物或芴衍生物、TBPe荧光材料、TTPA荧光材料、TBRb荧光材料或DBP荧光材料中的至少一种。
量子点包括但不限于是红色量子点、绿色量子点或蓝色量子点中的至少一种，并且量子点包括但不限于是单一组分量子点、核壳结构量子点、无机钙钛矿量子点或有机-无机杂化钙钛矿量子点的至少一种，量子点的平均粒径例如可以为5nm～10nm，量子点的平均粒径例如可以为5nm、6nm、7nm、8nm、9nm或10nm。
对于单一组分量子点和核壳结构量子点，单一组分量子点的材料、核壳结构量子点的核的材料或核壳结构量子点的壳的材料包括但不限于是II-VI族化合物、III-V族化合物、IV-VI族化合物或I-III-VI族化合物中的至少一种，其中，所述II-VI族化合物选自CdS、CdSe、 CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe或HgZnSTe中的至少一种，所述III-V族化合物选自GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs或InAlPSb中的至少一种，所述IV-VI族化合物选自SnS、SnSe、SnTe、PbS、PbSe、PbTe、SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe、SnPbTe、SnPbSSe、SnPbSeTe或SnPbSTe中的至少一种，所述I-III-VI族化合物选自CuInS、CuInSe或AgInS中的至少一种。需要说明的是，对于单一组分量子点的材料、核壳结构量子点的核的材料或核壳结构量子点的壳的材料，提供的化学式仅示明了元素组成，并未示明各个元素的含量，例如：CdZnS仅表示由Cd、Zn和S三种元素组成。
对于无机钙钛矿量子点，无机钙钛矿量子点的结构通式为AMX3，其中A为Cs+离子，M为二价金属阳离子，M包括但不限于是Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+或Eu2+，X为卤素阴离子，包括但不限于Cl-、Br-或I-。
对于有机-无机杂化钙钛矿量子点，有机-无机杂化钙钛矿量子点的结构通式为BMX3，其中B为有机胺阳离子，包括但不限于是CH3(CH2)n-2NH3+(n≥2)或NH3(CH2)nNH3 2+(n≥2)，M为二价金属阳离子，M包括但不限于是Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+或Eu2+，X为卤素阴离子，包括但不限于Cl-、Br-或I-。
可以理解的是，当发光层的材料包括量子点时，发光层的材料还包括连接于量子点表面的配体，配体包括但不限于是胺类配体、羧酸类配体、硫醇类配体、(氧)膦配体、磷脂、软磷脂或聚乙烯基吡啶中的至少一种，胺类配体例如选自油胺、正丁胺、正辛胺、八胺、1,2-乙二胺或十八胺中的至少一种，羧酸类配体例如选自油酸、乙酸、丁酸、戊酸、己酸、花生酸、十酸、十一烯酸、十四酸或硬脂酸中的至少一种，硫醇类配体例如选自乙硫醇、丙硫醇、巯基乙醇、苯硫醇、辛硫醇、八烷基硫醇、十二烷基硫醇或十八烷基硫醇中的至少一种，(氧)膦配体选自三辛基膦或三辛基氧膦中的至少一种。
在本申请的一些实施例中，在对膜层进行可控退火深度的第一退火处理的步骤中，第一退火处理的退火方向为第一面指向第三面的垂直方向，第一退火处理的深度不大于第一深度，第一深度为第一面与第三面之间的垂直间距。可以理解的是，当固化膜与发光层直接接触时，第一深度为固化膜的厚度；当固化膜与发光层之间还设有其他膜层时，第一深度为固化膜的厚度以及位于固化膜与发光层之间的所有膜层的总厚度的两者之和。
在本申请的一些实施例中，预制器件还包括底电极，底电极位于发光层远离功能层的一侧，光电器件的制备方法还包括步骤：在功能层远离发光层的一侧形成顶电极，底电极和顶电极中的一者为阳极，另一者为阴极。沿着发光层指向顶电极的方向上，顶电极包括相对设置的第五面和第六面，第五面相较于第六面更靠近功能层。光电器件的制备方法还包括步骤：对功能层和顶电极进行可控退火深度的第二退火处理，第二退火处理的退火方向为第六面指向第三面的垂直方向，第二退火处理的深度不大于第二深度，第二深度为第六面与第三面之间的垂直间距。第二退火处理参照第一退火处理的描述。
需要说明的是，当发光层、功能层以及顶电极依次层叠设置时，第二深度为顶电极的厚度和功能层的厚度的两者之和。当发光层与功能层之间还设有其他膜层和/或功能层与顶电极之间还设有其他膜层时，第二深度为位于发光层与功能层之间所有膜层的厚度和/或位于功能层与顶电极之间所有膜层的厚度、以及顶电极的厚度、以及功能层的厚度之和。
可以理解的是，底电极和发光层之间还可以设置其他功能层，例如：当光电器件为正置型结构时，底电极为阳极且顶电极为阴极，底电极与发光层之间还可以设有空穴功能层，空穴功能层包括但不限于是空穴注入层和/或空穴传输层，对应功能层为电子功能层，电子功能层包括但不限于是电子传输层或电子注入层；又如：当光电器件为倒置型结构时，底电极为阴极且顶电极为阳极，底电极与发光层之间还可以设有电子功能层，对应功能层为空穴功能层。预制器件还可以包括衬底，衬底设置于底电极远离发光层的一侧，衬底的材料可以是刚性材料或柔性材料。
在本申请的一些实施例中，发光层为量子点发光层，发光层包括多个层叠设置的量子点层，每一量子点层的厚度为所包含量子点的平均粒径，其中，多个层叠设置的量子点子层包括第一量子点子层和第N量子点子层，N为大于等于二的正整数，在多个层叠设置的量子点子层中，第一量子点子层最靠近功能层，第N量子点子层与功能层的距离最远。
作为示例，如图1所示，发光层13包括依次层叠设置的第一量子点层131、第二量子点层132和第三量子点层133，其中，第三量子点层133较第一量子点层131更靠近底电极11；第一量子点层131的材料为第一量子点，第一量子点层131的厚度为第一量子点的平均粒径；第二量子点层132的材料为第二量子点，第二量子点层132的厚度为第二量子点的平均粒径；第三量子点层133的材料为第三量子点，第三量子点层133的厚度为第三量子点的平均粒径。
在本申请的一些实施例中，发光层的厚度为15nm至30nm，每一量子点层的厚度为5nm至12nm，例如可以是5nm至7nm、7nm至9nm、9nm至11nm、或者11nm至12nm，每一量子点层的厚度示例为5nm、6nm、7nm、8nm、9nm、10nm、11nm、或者12nm。各个量子点层的厚度可以彼此不相同，或者至少部分量子点层的厚度彼此相同。
在本申请的一些实施例中，在对膜层进行可控退火深度的第一退火处理的步骤中，第一退火处理的退火方向为第一面指向第一量子点子层的垂直方向，第一退火处理的深度不大于第三深度；第三深度为第一面与第三面之间的垂直间距，以及第一量子点子层的厚度的两者之和。可以理解的时，当功能层与发光层直接接触时，第三深度为功能层的厚度以及第一量子点子层的厚度的两者之和；当功能层与发光层之间还设有其他膜层时，第三深度为位于功能层与发光层之间的所有膜层的厚度、功能层的厚度以及第一量子点子层的厚度的三者之和。
作为示例，继续参阅图2，功能层100形成于发光层13远离底电极11的一侧，功能层100与发光层13直接接触，功能层100包括相对设置的第一面1011和第二面1012，第二面1012较第一面1011更靠近发光层13，在对功能层100进行可控深度的第一退火处理步骤中，第一退火处理的退火方向为第一面1011指向第一量子点层131的垂直方向F1，对功能层100的退火深度不大于第三深度H1。第三深度H1为功能层100的厚度D1以及第一量子点层131的厚度D2的两者之和，对功能层100的退火深度例如可以是D1，对功能层100的退火深度又如可以是H1。
作为示例，请参阅图2，功能层100由层叠设置的第一膜层101和第二膜层102组成，第一膜层101较第二膜层102更靠近发光层13，对第一膜层101进行可控深度的第一退火处理的方式可参照前述示例；在对第二膜层102进行可控深度的第一退火处理步骤中，对第二膜层102的退火方向为第二膜层102远离第一膜层101的一面指向第一量子点层131的垂直方向F2，对第二膜层102的退火深度不大于第一膜层101的厚度D1、第二膜层102的厚度D3以及第一量子点层131的厚度D2的三者之和，第二膜层102的退火深度例如可以是D1、D2以及D3的三者之和，第二膜层102的退火深度又如可以是D1以及D3的两者之和，第二膜层102的退火深度又如可以是D3。可以理解的是，可以仅对第一膜层101进行可控深度的第一退火处理，第二膜层102采用常规方法制备。
作为替代性实施方案，当预制器件还包括底电极时，光电器件的制备方法还包括步骤： 在功能层远离发光层的一侧形成顶电极，底电极和顶电极中的一者为阳极，另一者为阴极。沿着发光层指向顶电极的方向上，顶电极包括相对设置的第五面和第六面，第五面相较于第六面更靠近功能层。光电器件的制备方法还包括步骤：对功能层和顶电极进行可控退火深度的第二退火处理，第二退火处理的退火方向为第六面指向第三面的垂直方向，第二退火处理的深度不大于第四深度；第四深度为第六面与第三面之间的垂直间距，以及第一量子点子层的厚度的两者之和。
需要说明的是，当发光层、功能层以及顶电极依次层叠设置时，第四深度为顶电极的厚度、功能层的厚度以及第一量子点子层的厚度的三者之和。当发光层与功能层之间还设有其他膜层和/或功能层与顶电极之间还设有其他膜层时，第四深度为位于发光层与功能层之间所有膜层的厚度和/或位于功能层与顶电极之间所有膜层的厚度、以及顶电极的厚度、以及功能层的厚度、以及第一量子点子层的厚度之和。
作为示例，请参阅图3，功能层100形成于发光层13远离底电极11的一侧，顶电极12形成于功能层100远离发光层13的一侧，在对功能层100和顶电极12进行可控退火深度的第二退火处理的步骤中，顶电极12包括相对设置的第五面121和第六面122，第五面121相较于第六面122更靠近功能层100，第二退火处理的退火方向为第六面122指向第一量子点层131的垂直方向F3，第二退火处理的退火深度不大于第四深度H2，第四深度H2为功能层100的厚度D1、顶电极12的厚度D4以及第一量子点层131的厚度D2的三者之和，第二退火处理的退火深度例如可以是D1和D4两者之和，第二退火处理的退火深度又如可以是D1、D2和D4三者之和。需要说明的是，在光电器件的形成过程中，可以不进行第一退火处理，仅进行第二退火处理；也可以不进行第二退火处理，仅进行第一退火处理。
作为示例，请参照图4，功能层100由层叠设置的第一膜层101和第二膜层102组成，第一膜层101较第二膜层102更靠近发光层13，在对功能层100和顶电极12进行可控退火深度的第二退火处理的步骤中，在对功能层100和顶电极12进行可控退火深度的第二退火处理的步骤中，顶电极12包括相对设置的第五面121和第六面122，第五面121相较于第六面122更靠近功能层100，第二退火处理的退火方向为第六面122指向第一量子点层131的垂直方向F4，第二退火处理的退火深度不大于第四深度H2，第四深度H2为第一量子点层131的厚度D2、第一膜层101的厚度D1、第二膜层102的厚度D3以及顶电极12的厚度D4的四者之和。
在本申请的一些实施例中，当功能层包括多个膜层时，每一膜层的材料为单层排布的金属氧化物，每一膜层的厚度为所包含的金属氧化物的平均粒径。功能层的厚度可以是7nm至70nm，例如可以是7nm至10nm、10nm至20nm、20nm至30nm、30nm至40nm、40nm至50nm、50nm至60nm、或者60nm至70nm，示例为7nm、10nm、20nm、30nm、40nm、50nm、60nm或70nm。
在本申请的一些实施例中，金属氧化物的平均粒径为2nm至100nm，例如可以是2nm至10nm、10nm至20nm、20nm至30nm、30nm至40nm、40nm至50nm、50nm至60nm、60nm至0nm、70nm至80nm、80nm至90nm、或者90nm至100nm。
在本申请的一些实施例中，光电器件为正置型结构，功能层为电子功能层，功能层的材料选自ZnO、TiO2、SnO2、BaO、Al2O3、Ta2O3、ZrO2、TiLiO、ZnGaO、ZnAlO、ZnMgO、ZnSnO、ZnLiO、InSnO、AlZnO、ZnOCl、ZnOF或ZnMgLiO中的至少一种。
在本申请的另一些实施例中，光电器件为倒置型结构，功能层为空穴功能层，功能层的材料选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)、3-己基取代聚噻吩、聚(9-乙烯咔唑)、聚[双(4-苯基)(4-丁基苯基)胺]、聚(N,N'-二(4-丁基苯基)-N,N'-二苯基-1,4-苯二胺-CO-9,9-二辛基芴)、4,4',4”-三(咔唑-9-基)三苯胺、4,4'-二(9-咔唑)联苯、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺、聚(3,4-乙烯二氧基噻吩)：聚(苯乙烯磺酸)、掺杂或非掺杂的石墨烯、C60、NiO、MoO3、WO3、V2O5、 CrO3、CuO或P型氮化镓中的至少一种。
本申请实施例还提供了一种光电器件，光电器件采用本申请实施例中任意一种所述的制备方法制得。
在本申请的一些实施例中，如图5所示，光电器件1为正置型结构，光电器件1包括底电极11、顶电极12、发光层13以及电子功能层14，底电极11与顶电极12相对设置，底电极11为阳极且顶电极12为阴极，发光层13设置于底电极11与顶电极12之间，电子功能层14设置于顶电极12与发光层13之间。
在本申请实施例的光电器件中，底电极11和顶电极12的材料彼此独立地选自金属、碳材料或金属氧化物中的至少一种，金属选自Al、Ag、Cu、Mo、Au、Ba、Ca或Mg中的至少一种；碳材料选自石墨、碳纳米管、石墨烯或碳纤维中的至少一种；金属氧化物可以是掺杂或非掺杂金属氧化物，例如选自氧化铟锡(ITO)、氟掺杂氧化锡(FTO)、氧化锡锑(ATO)、铝掺杂的氧化锌(AZO)、镓掺杂的氧化锌(GZO)、铟掺杂的氧化锌(IZO)或镁掺杂的氧化锌(MZO)中的至少一种。底电极11或顶电极12也可以选自掺杂或非掺杂透明金属氧化物之间夹着金属的复合电极，复合电极包括但不限于是AZO/Ag/AZO、AZO/Al/AZO、ITO/Ag/ITO、ITO/Al/ITO、ZnO/Ag/ZnO、ZnO/Al/ZnO、TiO2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2或TiO2/Al/TiO2中的至少一种。底电极11的厚度例如可以是20nm至200nm，顶电极12的厚度例如可以是20nm至200nm。
在本申请实施例的光电器件中，电子功能层14可以是单层结构，也可以是叠层结构。电子功能层14例如为单层结构，电子功能层14为电子注入层或电子传输层，对应地，电子功能层14为上述制备方法中的功能层。又如，电子功能层14为叠层结构，电子功能层14由层叠设置的电子注入层和电子传输层组成，电子注入层较电子传输层更靠近顶电极12，电子传输层较电子注入层更靠近发光层13，对应地，电子传输层为上述制备方法中的功能层。
电子注入层的材料包括但不限于是碱金属卤化物、碱金属有机络合物或有机膦化合物中的至少一种，碱金属卤化物包括但不限于是LiF，碱金属有机络合物包括但不限于是8-羟基喹啉锂，有机膦化合物包括但不限于是有机氧化磷、有机硫代膦化合物或有机硒代膦化合物中的至少一种。
电子传输层的材料包括但不限于是金属氧化物，金属氧化物包括但不限于是ZnO、TiO2、SnO2、BaO、Ta2O3、ZrO2、TiLiO、ZnGaO、ZnAlO、ZnMgO、ZnSnO、ZnLiO、InSnO、AlZnO、ZnOCl或ZnOF中的至少一种。对于掺杂的金属氧化物，提供的化学式仅示明了元素组成，并未示明各个元素的含量，例如：ZnMgO仅表示由Zn、Mg和O三种元素组成。金属氧化物的平均粒径例如可以是2nm至15nm，示例为2nm、3nm、4nm、5nm、6nm、7nm、8nm、9nm、10nm、11nm、12nm、13nm、14nm、或者15nm。
为了进一步地提升光电器件的光电性能和使用寿命，在本申请的一些实施例中，继续参阅图5，在图5所示正置型结构的光电器件的基础上，光电器件1还包括空穴功能层15，空穴功能层15设置于底电极11与发光层13之间。
空穴功能层15可以是单层结构，也可以是叠层结构。空穴功能层15例如为单层结构，空穴功能层15为空穴注入层或空穴传输层。又如，空穴功能层为叠层结构，空穴功能层15由层叠设置的空穴注入层和空穴传输层组成，空穴注入层较空穴传输层更靠近底电极，空穴传输层较空穴注入层更靠近发光层。
空穴注入层的材料包括但不限于是聚(3,4-乙烯二氧基噻吩):聚(苯乙烯磺酸)、酞菁铜、酞菁氧钛、4,4',4'-三(N-3-甲基苯基-N-苯基氨基)三苯胺、4,4',4'-三[2-萘基苯基氨基]三苯基胺、2,3,5,6-四氟-7,7',8,8'-四氰二甲基对苯醌、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲、过渡金属氧化物或过渡金属硫系化合物中的至少一种，其中，过渡金属氧化物选自NiOx、 MoOx、WOx、CrOx或CuOx中的至少一种，过渡金属硫系化合物选自MoSx、MoSex、WSx、WSex或CuSx中的至少一种。
空穴传输层的材料包括但不限于是聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB,CAS号为220797-16-0)、3-己基取代聚噻吩(CAS号为104934-50-1)、聚(9-乙烯咔唑)(PVK,CAS号为25067-59-8)、聚[双(4-苯基)(4-丁基苯基)胺](Poly-TPD,CAS号为472960-35-3)、聚(N,N'-二(4-丁基苯基)-N,N'-二苯基-1,4-苯二胺-CO-9,9-二辛基芴)(PFB,CAS号为223569-28-6)、4,4',4”-三(咔唑-9-基)三苯胺(TCTA,CAS号为139092-78-7)、4,4'-二(9-咔唑)联苯(CBP,CAS号为58328-31-7)、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺(TPD,CAS号为65181-78-4)以及N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺(NPB,CAS号为123847-85-8)、C60、NiO、MoO3、WO3、V2O5、CrO3或CuO中的至少一种。
在本申请的另一些实施例中，光电器件为倒置型结构，如图6所示，光电器件包括底电极11、顶电极12、发光层13以及空穴功能层15，底电极11与顶电极12相对设置，底电极11为阴极且顶电极12为阳极，发光层13设置于底电极11与顶电极12之间，空穴功能层15设置于顶电极12与发光层13之间。
底电极11、顶电极12、发光层13以及空穴功能层15的结构组成可参照前文描述。空穴功能层15例如为单层结构，空穴功能层15为空穴注入层或空穴传输层，对应地，空穴功能层15为上述制备方法中的功能层。又如，空穴功能层15为叠层结构，空穴功能层15由层叠设置的空穴注入层和空穴传输层组成，对应地，空穴传输层为上述制备方法中的功能层。
为了进一步地提升光电器件的光电性能和使用寿命，在本申请的一些实施例中，继续参阅图5，在图6所示倒置型结构的光电器件的基础上，光电器件1还包括电子功能层14，电子功能层14设置于顶电极12与发光层13之间。电子功能层14的结构组成参照前文描述。
需要说明的是，无论光电器件为正置型结构，还是倒置型结构。在光电器件的制备过程中，至少位于发光层远离底电极的一侧且与发光层直接接触的膜层采用可控退火深度的退火工艺实现充分退火。
本申请实施例还提供了一种电子设备，电子设备包括本申请实施例中任意一种所述的制备方法制得的光电器件。电子设备例如可以是任何具有显示功能的电子产品，包括但不限于是智能手机、平板电脑、笔记本电脑、数码相机、数码摄像机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机或电子书阅读器，其中，智能可穿戴设备例如可以是智能手环、智能手表、虚拟现实(Virtual Reality,VR)头盔等。
下面通过具体实施例、对比例和实验例对本申请的技术方案及技术效果进行详细说明，以下实施例仅仅是本申请的部分实施例，并非对本申请作出具体限定。
实施例1
本实施例提供了一种光电器件及其制备方法，所述光电器件为正置型结构的量子点发光二极管，如图7所示，在由下至上的方向上，光电器件1包括依次层叠设置的衬底10、底电极11、空穴功能层15、发光层13、电子功能层14以及顶电极12，其中，底电极11为阳极，顶电极12为阴极，空穴功能层15由层叠设置的空穴注入层151和空穴传输层152组成，空穴注入层151较空穴传输层152更靠近底电极11，空穴传输层152较空穴注入层151更靠近发光层13，电子功能层14为电子传输层。
光电器件1中各个层的材料与厚度如下：
衬底10的材料为玻璃，衬底10的厚度为3mm；
底电极11的材料为ITO，底电极11的厚度为15nm；
顶电极12的材料为Ag，顶电极12的厚度为20nm；
发光层13由依次层叠设置的第一量子点层131、第二量子点层132和第三量子点层133组成，第一量子点层131较第三量子点层133更靠近电子功能层14，第一量子点层131的材料为第一量子点，第二量子点层132的材料为第二量子点，第三量子点层133的材料为第三量子点，第一量子点、第二量子点和第三量子点均相同，即均为CdS量子点，发光颜色为绿色，且粒径为10nm，对应第一量子点层131、第二量子点层132和第三量子点层133的厚度均为10nm，发光层13的厚度为30nm；
空穴注入层151的材料为PEDOT:PSS，空穴注入层151的厚度为65nm；
空穴传输层152的材料为TFB，空穴传输层152的厚度为25nm；
电子功能层14的材料为平均粒径是10nm的ZnO，电子功能层14的厚度为50nm。
本实施例中光电器件的制备方法包括如下步骤：
S1.1、提供衬底，在衬底的一侧溅射ITO以获得ITO层，用棉签蘸取少量肥皂水擦拭ITO层表面以去除表面肉眼可见的杂质，然后将包括ITO的衬底依次采用去离子水超声清洗15min、丙酮超声清洗15min、乙醇超声清洗15min以及异丙醇超声清洗15min，烘干后采用紫外-臭氧表面处理15min，获得包括底电极(阳极)的衬底；
S1.2、在常温常压的空气环境下，在阳极远离衬底的一侧旋涂PEDOT：PSS水溶液，然后置于150℃下恒温热处理15min，获得空穴注入层；
S1.3、在水氧含量小于0.1ppm的环境下，在空穴注入层远离阳极的一侧喷墨打印8mg/mL的TFB-氯苯溶液，然后置于120℃下恒温热处理10min，获得空穴传输层；
S1.4、在水氧含量小于0.1ppm的环境下，在空穴传输层远离空穴注入层的一侧喷墨打印浓度为20mg/mL的CdS量子点-正辛烷溶液，然后置于120℃下恒温热处理5min，获得发光层；
S1.5、在水氧含量小于0.1ppm的环境下，在发光层远离空穴传输层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得50nm的电子功能层；
S1.6、将包含电子功能层的预制器件置于真空度不高于3x10-4Pa的蒸镀仓中，通过掩膜板在电子传输层远离发光层的一侧热蒸镀Ag，获得顶电极(阴极)；
S1.7、采用原子层退火工艺处理电子功能层，即采用氩等离子体轰击顶电极和电子功能层，氩等离子体轰击的平均功率为260W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为顶电极的厚度(20nm)和电子功能层的厚度(50nm)之和(70nm)，然后环氧树脂封装以获得光电器件。
实施例2
本实施例提供了一种光电器件及其制备方法，本实施例中光电器件的结构组成与实施例1相同。
相较于实施例1中光电器件的制备方法，本实施例的制备方法的区别之处仅在于：将步骤S1.5替换为“在水氧含量小于0.1ppm的环境下，在发光层远离空穴传输层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得50nm的电子功能层，接着采用原子层退火工艺处理电子功能层，即采用氩等离子体轰击电子功能层，氩等离子体轰击的平均功率为150W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为电子功能层的厚度(50nm)”，并且省略步骤S1.7，以及制备完成顶电极之后进行封装。
实施例3
本实施例提供了一种光电器件及其制备方法，本实施例中光电器件的结构组成与实施例1相同。
相较于实施例1中光电器件的制备方法，本实施例的制备方法的区别之处仅在于：将 步骤S1.7替换为“采用原子层退火工艺处理电子功能层，即采用氩等离子体轰击顶电极、电子功能层以及第一量子点层，氩等离子体轰击的平均功率为300W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为顶电极的厚度(20nm)、电子功能层的厚度(50nm)以及第一量子点层的厚度(10nm)之和(80nm)，然后环氧树脂封装以获得光电器件”。
实施例4
本实施例提供了一种光电器件及其制备方法，本实施例中光电器件的结构组成与实施例1相同。
相较于实施例1中光电器件的制备方法，本实施例的制备方法的区别之处仅在于：将步骤S1.5替换为“在水氧含量小于0.1ppm的环境下，在发光层远离空穴传输层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得50nm的电子功能层，接着采用原子层退火工艺处理电子功能层，即采用氩等离子体轰击电子功能层和第一量子点层，氩等离子体轰击的平均功率为200W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为电子功能层的厚度(50nm)以及第一量子点层的厚度(10nm)之和(60nm)”，并且省略步骤S1.7，以及制备完成顶电极之后进行封装。
实施例5
本实施例提供了一种光电器件及其制备方法，如图8所示，相较于实施例1中光电器件，本实施例中光电器件的区别之处仅在于：电子功能层14由依次层叠设置的第一ZnO原子层141、第二ZnO原子层142、第三ZnO原子层143、第四ZnO原子层144以及第五ZnO原子层145组成，第一ZnO原子层141较第五ZnO原子层145更靠近顶电极12，第五ZnO原子层145较第一ZnO原子层141更靠近发光层13，第一ZnO原子层141至第五ZnO原子层145的材料均为粒径是10nm的ZnO，且各个ZnO原子层的厚度均为10nm。
本实施例中光电器件的制备方法包括如下步骤：
S5.1、参照步骤S1.1；
S5.2、参照步骤S1.2；
S5.3、参照步骤S1.3；
S5.4、在水氧含量小于0.1ppm的环境下，在发光层远离空穴传输层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得10nm的第五ZnO原子层，接着采用原子层退火工艺处理第五ZnO原子层，即采用氩等离子体轰击第五ZnO原子层和第一量子点层，氩等离子体轰击的平均功率为50W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为第五ZnO原子层的厚度(10nm)和第一量子点层的厚度(10nm)之和(20nm)；
S5.5、在水氧含量小于0.1ppm的环境下，在第五ZnO原子层远离发光层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得10nm的第四ZnO原子层，接着采用原子层退火工艺处理第四ZnO原子层，即采用氩等离子体轰击第五ZnO原子层、第四ZnO原子层和第一量子点层，氩等离子体轰击的平均功率为80W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为30nm；
S5.6、在水氧含量小于0.1ppm的环境下，在第四ZnO原子层远离第五ZnO原子层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得10nm的第三ZnO原子层，接着采用原子层退火工艺处理第三ZnO原子层，即采用氩等离子体轰击第三ZnO原子层至第五ZnO原子层以及第一量子点层，氩等离子体 轰击的平均功率为110W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为40nm；
S5.7、在水氧含量小于0.1ppm的环境下，在第三ZnO原子层远离第四ZnO原子层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得10nm的第二ZnO原子层，接着采用原子层退火工艺处理第二ZnO原子层，即采用氩等离子体轰击第二ZnO原子层至第五ZnO原子层以及第一量子点层，氩等离子体轰击的平均功率为150W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为50nm；
S5.8、在水氧含量小于0.1ppm的环境下，在第二ZnO原子层远离第三ZnO原子层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min，获得10nm的第一ZnO原子层，接着采用原子层退火工艺处理第一ZnO原子层，即采用氩等离子体轰击第一ZnO原子层至第五ZnO原子层以及第一量子点层，氩等离子体轰击的平均功率为200W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为60nm；
S5.9、将包含电子功能层的预制器件置于真空度不高于3x10-4Pa的蒸镀仓中，通过掩膜板在电子传输层远离发光层的一侧热蒸镀Ag，获得顶电极(阴极)；
S6.0、采用氩等离子体轰击和电子功能层，氩等离子体轰击的平均功率为300W，轰击次数为20次，每次轰击的时间为0.01s，每次轰击处理后自然冷却20s(即相邻轰击的时间间隔为20s)，每次轰击的深度为顶电极的厚度(20nm)、电子功能层的总厚度(50nm)以及第一量子点层的厚度(10nm)之和(80nm)，然后环氧树脂封装以获得光电器件。
实施例6
本实施例提供了一种光电器件及其制备方法，本实施例中光电器件的结构组成与实施例1相同。
相较于实施例1中光电器件的制备方法，本实施例的制备方法的区别之处仅在于：将步骤S1.7替换为“采用连续式电子束退火工艺处理电子功能层，退火时间为0.01s，电子束的加速电压为221kV，电子束的平均功率为2×103W/cm2，然后环氧树脂封装以获得光电器件”。
对比例
本实施例提供了一种光电器件及其制备方法，本对比例中光电器件的结构组成与实施例1相同。
相较于实施例1中光电器件的制备方法，本对比例的制备方法的区别之处仅在于：将步骤S1.5替换为“在水氧含量小于0.1ppm的环境下，在发光层远离空穴传输层的一侧喷墨打印浓度为30mg/mL的ZnO-乙醇溶液，然后置于10-2Mpa的真空环境下静置15min”，并且省略步骤S1.7，以及制备完成顶电极之后进行封装。
实验例
对实施例1至实施例6以及对比例的光电器件进行性能检测，采用弗士达FPD光学特性测量设备(包括海洋光学USB2000、LabView控制QE-PRO光谱仪、Keithley 2400、高精度数字源表Keithley 6485、内径为50μm的光纤、器件测试探针与夹具、相关各类连接线与数据卡、效率测试暗盒和数据采集系统等元件搭建的效率测试系统)检测获得各个光电器件的启亮电压、电流、亮度、发光光谱等参数，然后计算获得外量子效率、功率效率等关键参数，并采用寿命测试设备测试上述的各个光电器件的使用寿命。
其中，电流效率的测试方法为：设定发光面积为2mm×2mm＝4mm2，间断地采集驱动电压为0V至8V范围内光电器件的亮度值，初始采集亮度的电压值为3V，每隔0.2V采集一次，每次采集的亮度值除以对应的电流密度即获得该次采集条件下的光电器件的电流效率，获 得最大电流效率(C.Emax,cd/A)。
使用寿命的测试方法为：在恒定电流(2mA)的驱动下，采用128路QLED寿命测试系统对各个光电器件进行电致发光寿命分析，记录各个光电器件由最大亮度衰减至95％所需的时间(T95,h)，并通过衰减拟合公式计算获得各个光电器件在1000nit的亮度下亮度由100％衰减至95％所需的时间(T95@1000nit,h)。
各个光电器件的性能检测数据详见下表1：
表1实施例1至实施例6以及对比例中光电器件的性能检测数据一览表
由表1可知，相较于对比例中光电器件，实施例1至实施例6中光电器件的光电性能和使用寿命具有显著的优势，以实施例5为例，实施例5中光电器件的Lmax是对比例中光电器件的Lmax的2倍，且实施例5中光电器件的T95是对比例中光电器件的T95的2.4倍，且实施例5中光电器件的T95@1000nit是对比例中光电器件的T95@1000nit的7.7倍，且实施例5中光电器件的C.Emax是对比例中光电器件的C.Emax的1.4倍。由此说明：在位于发光层远离底电极的一侧的上层功能层的形成过程中，先采用溶液法制备功能湿膜，然后真空干燥处理形成固态功能层，并采用退火深度可控的退火工艺处理固态功能层，既能避免退火工艺对发光层的性能造成不利影响，又能确保固态功能层充分退火，有效改善了传统的退火方式(热处理或真空干燥处理)对光电器件性能的不利影响，提高了光电器件的光电性能和使用寿命。
由实施例1与实施例2中光电器件的性能检测数据可知，实施例1中光电器件的综合性能略优于实施例2中光电器件的综合性能，此外，由实施例3与实施例4中光电器件的性能检测数据可知，实施例3中光电器件的综合性能略优于实施例4中光电器件的综合性能，由此说明：相较于形成电子功能层之后立即对电子功能层进行退火处理，形成顶电极之后再对电子功能层和顶电极一起进行退火处理能够进一步地提升光电器件的综合性能，原因可能在于：不但对电子功能层进行了充分退火处理以有效减少电子功能层的缺陷，而且对电子功能层与顶电极之间的界面也进行了充分退火处理，有利于提升电子功能层与顶电极之间的欧姆接触，并且能够降低电子注入势垒，提高了电子注入水平。
由实施例1至实施例4中光电器件的性能检测数据可知，实施例3和实施例4中光电器件的综合性能较实施例1和实施例2中光电器件的综合性能更佳，由此说明：相较于退火深度为顶电极远离发光层的一侧与发光层靠近电子功能层之间的垂直间距，退火深度为顶电极远离发光层的一侧与发光层靠近电子功能层之间的垂直间距以及第一量子点层的厚度之和，能够进一步地提升光电器件的综合性能，原因可能在于：在QLED中，由于一般电子注入水平大于空穴注入水平，所以发光层靠近电子功能层的一层量子点层(第一量子点层)并不处于电子-空穴复合形成激子的区域，因此，将退火深度控制至第一量子点层能够充分处理电子功能层与发光层之间的界面以及电子功能层，具有促进部分第一量子点和部分ZnO扩散的作用，从而有效降低了能级梯度；此外，在阴极与电子功能层之间注入势垒不 变的前提下，电子更容易从电子功能层注入至发光层是，使得因过量电子注入而导致的电荷累积程度降低，从而改善了“电荷过度累积”的现象。
由实施例1至实施例5中光电器件的性能检测数据可知，实施例5中光电器件的综合性能最佳，由此可知：在电子功能层的制备过程中，依次制备形成单层ZnO原子层直至叠合至电子功能层所需的厚度，并且在每一ZnO原子层制备完成之后均对该ZnO原子层进行原子层退火处理，有效地提高了电子功能层的退火程度，从而进一步地提升了电子功能层的电子迁移性能。
由实施例1至实施例6中光电器件的性能检测数据可知，实施例1至实施例5中光电器件的综合性能均优于实施例6中光电器件的综合性能，由此可知：相较于采用电子束退火工艺处理电子功能层，采用原子层退火工艺处理电子功能层能够进一步地提升光电器件的综合性能，原因在于：原子层退火工艺能够将退火深度精确至纳米级别，针对电子功能层和发光层分别由多个原子层叠加形成，而单个原子层的厚度是纳米级，所以采用原子层退火工艺能够提高退火精准度，并且经原子层退火工艺处理的膜层具有更高的致密度，例如可将膜层致密度提升10％至15％；此外，采用经原子层退火工艺处理电子功能层，能够改善电子功能层中ZnO的不良晶相，促使ZnO的排布更加有序。
以上对本申请实施例所提供的一种光电器件的制备方法、光电器件与电子设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种光电器件的制备方法，其中，包括如下步骤：
    提供预制器件，所述预制器件包括固化的功能层；
    其中，所述功能层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
  2. 根据权利要求1所述的制备方法，其中，至少一个所述膜层的制备方法包括步骤：形成固化膜，对所述固化膜进行可控退火深度的所述第一退火处理。
  3. 根据权利要求2所述的制备方法，其中，所述形成固化膜的步骤，包括如下步骤：
    沉积包含所述膜层的材料的溶液；以及
    对沉积的所述包含所述膜层的材料的溶液进行干燥处理，获得固化膜。
  4. 根据权利要求3所述的制备方法，其中，所述干燥处理为真空干燥处理；
    或者，所述干燥处理为热处理，所述热处理的温度为20℃至40℃。
  5. 根据权利要求1至4任一项中所述的制备方法，其中，所述第一退火处理选自原子层退火处理、电子束退火处理或红外激光辐照处理中的至少一种。
  6. 根据权利要求5所述的制备方法，其中，所述第一退火处理选自所述原子层退火处理，对所述膜层进行可控退火深度的第一退火处理，包括步骤：采用氩等离子体轰击所述膜层，其中，所述氩等离子体轰击的平均功率为50W至450W，所述氩等离子体轰击的次数为1至20，单次所述氩等离子体轰击的时间为0.01s至0.1s，所述氩等离子体轰击的次数大于等于2时，相邻所述氩等离子体轰击的时间间隔为10s至30s；
    或者，所述第一退火处理选自所述电子束退火处理，在对所述膜层进行可控退火深度的第一退火处理的步骤中，所述第一退火处理中电子束斑的平均功率为103W/cm2至104W/cm2，电子束扫描所述膜层的时间为0.01s至0.1s，电子束的加速电压为100V至1000V；
    或者，所述第一退火处理选自所述红外激光辐照处理，所述红外激光辐照处理的工艺参数为：激光波长为1000nm至1064nm，脉冲宽度为100fs至120fs，重复频率为1kHz至1.5kHz，光束质量因子为1至1.2，激光扫描所述膜层的时间为0.01s至0.1s。
  7. 根据权利要求1至6任一项中所述的制备方法，其中，所述预制器件还包括发光层，所述功能层形成于所述发光层的一侧；
    其中，沿着所述发光层指向所述功能层的方向上，单个所述膜层包括相对设置的第一面和第二面，所述第二面较所述第一面更靠近所述发光层，所述发光层包括相对设置的第三面和第四面，所述第三面较所述第四面更靠近所述功能层。
  8. 根据权利要求7所述的制备方法，其中，在对所述膜层进行可控退火深度的第一退火处理的步骤中，所述第一退火处理的退火方向为所述第一面指向所述第三面的垂直方向，所述第一退火处理的深度不大于第一深度，所述第一深度为所述第一面与所述第三面之间的垂直间距。
  9. 根据权利要求7或8所述的制备方法，其中，所述预制器件还包括底电极，所述底电极位于所述发光层远离所述功能层的一侧，所述制备方法还包括步骤：
    在所述功能层远离所述发光层的一侧形成顶电极；
    其中，所述底电极和所述顶电极中的一者为阳极，另一者为阴极；沿着所述发光层指向所述顶电极的方向上，所述顶电极包括相对设置的第五面和第六面，所述第五面相较于所述第六面更靠近所述功能层；
    所述制备方法还包括步骤：对所述功能层和所述顶电极进行可控退火深度的第二退火处理，所述第二退火处理的退火方向为所述第六面指向所述第三面的垂直方向，所述第二退火处理的深度不大于第二深度，所述第二深度为所述第六面与所述第三面之间的垂直间 距。
  10. 根据权利要求7至9任一项中所述的制备方法，其中，所述发光层为量子点发光层，所述发光层包括多个层叠设置的量子点子层，每一所述量子点子层的量子点呈单层排布，每一所述量子点子层的厚度为所包含的量子点的平均粒径；
    其中，所述多个层叠设置的量子点子层包括第一量子点子层和第N量子点子层，所述N为大于等于二的正整数，在所述多个层叠设置的量子点子层中，所述第一量子点子层最靠近所述功能层，所述第N量子点子层与所述功能层的距离最远；
    在对所述膜层进行可控退火深度的第一退火处理的步骤中，所述第一退火处理的退火方向为所述第一面指向所述第一量子点子层的垂直方向，所述第一退火处理的深度不大于第三深度；所述第三深度为所述第一面与所述第三面之间的垂直间距，以及所述第一量子点子层的厚度的两者之和。
  11. 根据权利要求10所述的制备方法，其中，所述预制器件还包括底电极，所述底电极位于所述发光层远离所述功能层的一侧，所述制备方法还包括步骤：
    在所述功能层远离所述发光层的一侧形成顶电极；
    其中，所述底电极和所述顶电极中的一者为阳极，另一者为阴极；沿着所述发光层指向所述顶电极的方向上，所述顶电极包括相对设置的第五面和第六面，所述第五面相较于所述第六面更靠近所述功能层；
    所述制备方法还包括步骤：对所述功能层和所述顶电极进行可控退火深度的第二退火处理，所述第二退火处理的退火方向为所述第六面指向所述第三面的垂直方向，所述第二退火处理的深度不大于第四深度；所述第四深度为所述第六面与所述第三面之间的垂直间距，以及所述第一量子点子层的厚度的两者之和。
  12. 根据权利要求10或11所述的制备方法，其中，每一所述量子点子层的材料选自单一组分量子点、核壳结构量子点、无机钙钛矿量子点或有机-无机杂化钙钛矿量子点的至少一种；当每一所述量子点层的材料选自单一组分量子点或核壳结构量子点时，所述单一组分量子点的材料、所述核壳结构量子点的核的材料以及所述核壳结构量子点的壳的材料彼此独立地选自II-VI族化合物、III-V族化合物、IV-VI族化合物或I-III-VI族化合物中的至少一种，其中，所述II-VI族化合物选自CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe或HgZnSTe中的至少一种，所述III-V族化合物选自GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs或InAlPSb中的至少一种，所述IV-VI族化合物选自SnS、SnSe、SnTe、PbS、PbSe、PbTe、SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe、SnPbTe、SnPbSSe、SnPbSeTe或SnPbSTe中的至少一种，所述I-III-VI族化合物选自CuInS、CuInSe或AgInS中的至少一种。
  13. 根据权利要求10至12任一项中所述的制备方法，其中，所述发光层的厚度为15nm至30nm；
    和/或，每一所述量子点层的厚度为5nm至12nm。
  14. 根据权利要求1至13任一项中所述的制备方法，其中，所述光电器件为正置型结构，且所述功能层为电子功能层，所述功能层的材料选自ZnO、TiO2、SnO2、BaO、Al2O3、 Ta2O3、ZrO2、TiLiO、ZnGaO、ZnAlO、ZnMgO、ZnSnO、ZnLiO、InSnO、AlZnO、ZnOCl、ZnOF或ZnMgLiO中的至少一种；
    或者，所述光电器件为倒置型结构，且所述功能层为空穴功能层，所述功能层的材料选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)、3-己基取代聚噻吩、聚(9-乙烯咔唑)、聚[双(4-苯基)(4-丁基苯基)胺]、聚(N,N'-二(4-丁基苯基)-N,N'-二苯基-1,4-苯二胺-CO-9,9-二辛基芴)、4,4',4”-三(咔唑-9-基)三苯胺、4,4'-二(9-咔唑)联苯、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺、聚(3,4-乙烯二氧基噻吩)：聚(苯乙烯磺酸)、掺杂或非掺杂的石墨烯、C60、NiO、MoO3、WO3、V2O5、CrO3、CuO或P型氮化镓中的至少一种。
  15. 根据权利要求1至14任一项中所述的制备方法，其中，当所述功能层包括多个膜层时，每一所述膜层的材料为单层排布的金属氧化物，每一所述膜层的厚度为所包含的金属氧化物的平均粒径；
    和/或，所述功能层的厚度为7nm至70nm。
  16. 根据权利要求15所述的制备方法，其中，所述金属氧化物的平均粒径为2nm至100nm。
  17. 一种光电器件，其中，所述光电器件为正置型结构，所述光电器件包括：
    相对设置的底电极和顶电极；
    发光层，设置于底电极与顶电极之间；以及
    电子功能层，设置于发光层与顶电极之间，所述电子功能层包括电子传输层；
    其中，所述光电器件的制备方法包括如下步骤：
    提供预制器件，所述预制器件包括固化的电子传输层；
    其中，所述电子传输层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
  18. 根据权利要求17所述的光电器件，其中，所述第一退火处理选自原子层退火处理、电子束退火处理或红外激光辐照处理中的至少一种。
  19. 一种光电器件，其中，所述光电器件为倒置型结构，所述光电器件包括：
    相对设置的底电极和顶电极；
    发光层，设置于底电极与顶电极之间；以及
    空穴功能层，设置于发光层与顶电极之间，所述空穴功能层包括空穴传输层；
    其中，所述光电器件的制备方法包括如下步骤：
    提供预制器件，所述预制器件包括固化的空穴传输层；
    其中，所述空穴传输层包括一个或多个膜层，对至少一个所述膜层进行可控退火深度的第一退火处理。
  20. 根据权利要求19所述的光电器件，其中，所述第一退火处理选自原子层退火处理、电子束退火处理或红外激光辐照处理中的至少一种。
PCT/CN2023/127383 2022-11-09 2023-10-27 光电器件的制备方法、光电器件与电子设备 WO2024099114A1 (zh)

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CN112038224A (zh) * 2020-09-11 2020-12-04 中国科学院微电子研究所 一种退火方法及装置
WO2022126479A1 (zh) * 2020-12-17 2022-06-23 湖北万度光能有限责任公司 可印刷曲面钙钛矿太阳能电池及其制备方法

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