WO2022110054A1 - Photodétecteur, son procédé de fabrication, puce et dispositif optique - Google Patents

Photodétecteur, son procédé de fabrication, puce et dispositif optique Download PDF

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Publication number
WO2022110054A1
WO2022110054A1 PCT/CN2020/132411 CN2020132411W WO2022110054A1 WO 2022110054 A1 WO2022110054 A1 WO 2022110054A1 CN 2020132411 W CN2020132411 W CN 2020132411W WO 2022110054 A1 WO2022110054 A1 WO 2022110054A1
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Prior art keywords
layer
electrode
electrode contact
contact layer
photodetector
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PCT/CN2020/132411
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English (en)
Chinese (zh)
Inventor
曹均凯
曹高奇
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华为技术有限公司
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Priority to CN202080102963.6A priority Critical patent/CN115943335A/zh
Priority to PCT/CN2020/132411 priority patent/WO2022110054A1/fr
Publication of WO2022110054A1 publication Critical patent/WO2022110054A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Definitions

  • the present application relates to the technical field of optical communication, and in particular, to a photodetector, a preparation method thereof, a chip and an optical device.
  • the working mechanism of the wavelength-selective switches (WSS) structure is that the colored light beams are incident on the free space in the WSS structure from the input fiber, and then the colored light beams are regularly transmitted through the action of various optical elements set in the free space. Dispersed into monochromatic beams of different wavelengths, and then through the action of geometric optics, the monochromatic beams of different wavelengths enter different output fibers. Therefore, the WSS structure can select different output wavelengths according to actual application needs, and can adjust the output optical power independently.
  • the light beam is transmitted in free space in the WSS structure, only the entrance and exit are provided with optical fibers.
  • a fiber tap detection device on the input or output fiber of the WSS structure.
  • the detection of the optical signal transmitted in the optical fiber 1 can be realized without destroying the optical path of the original optical fiber 1 .
  • the input fiber and output fiber of the WSS structure are usually fiber arrays (Fiber Array), it is necessary to install a large number of fiber tap detection devices 2 to meet the requirements of real-time detection.
  • using a large number of optical fiber tap detection devices 2 requires a large installation space, which will lead to increased volume, complex structure, and increased cost of the optical fiber communication system.
  • the present application provides a photodetector, a preparation method thereof, a chip and an optical device, which are used to provide a new type of photodetector.
  • a photodetector provided by the present application includes: a substrate, a first electrode contact layer, a photosensitive layer, a second electrode contact layer, and a passivation layer that are sequentially stacked on the substrate;
  • the first electrode and the second electrode on the chemical layer; the first electrode contact layer and the second electrode contact layer are doped semiconductor layers with opposite polarities, for example, the first electrode contact layer is a P-type doped semiconductor layer, and the second electrode contact layer is a P-type doped semiconductor layer.
  • the contact layer is an N-type doped semiconductor layer, or the first electrode contact layer is an N-type doped semiconductor layer, and the second electrode contact layer is a P-type doped semiconductor layer.
  • the photodetector also includes a through hole penetrating at least the photosensitive layer and the second electrode contact layer; the orthographic projections of the first electrode and the second electrode on the substrate are respectively located outside the orthographic projection of the through hole on the substrate, and the first electrode and the second electrode are insulated from each other, the first electrode is electrically connected to the first electrode contact layer through a first groove penetrating the film layer between the first electrode and the first electrode contact layer, and the second electrode is electrically connected to the first electrode contact layer through the passivation layer.
  • the second groove is electrically connected to the second electrode contact layer.
  • the first electrode contact layer and the second electrode contact layer form a PN junction.
  • the photosensitive layer captures the light passing through the via hole V0
  • the PN junction can convert the optical signal into an electrical signal, thereby realizing Detection of optical signals.
  • the photodetector is not limited in structure to a photodiode (Photodiode, PD), an avalanche photodiode (Avalanche Photodiode, APD) or a heterojunction phototransistor (Hetero junction Photodiode, HPT) and the like.
  • the orthographic projections of the first electrode and the second electrode on the substrate are respectively located outside the orthographic projection of the through hole on the substrate, so that the orthographic projection of the first electrode on the substrate and the first Neither of the orthographic projections of the two electrodes on the substrate can cover the through hole, thus preventing the first electrode and the second electrode from blocking light passing through the through hole.
  • the photodetector of the present application can be applied to various structures based on the transmission of light in free space.
  • the photodetector can be arranged on the transmission path of monochromatic light in free space, and the monochromaticity and direction of the transmission of these light beams can be used. Due to the characteristics of the Gaussian distribution of light intensity and light intensity, when the monochromatic beam passes through the photodetector, a small number of photons at the edge of the beam will enter the photodetector, so that the light signal can be detected in real time without interfering with the light transmission.
  • the photodetector is arranged on the transmission path of the monochromatic light in the free space of the WSS structure.
  • the photodetector can directly obtain photons from the transmission path of monochromatic light without the help of other devices, it can be fixed on the transmission path of monochromatic light without complex mechanical fixing parts, which is different from using existing devices. Compared with the optical fiber tap detection device, the overall structure complexity and cost can be reduced.
  • the electrical contact performance between the P-type doped semiconductor layer and the metal electrode is generally not as good as the electrical contact performance between the N-type doped semiconductor layer and the metal electrode. Therefore, for the P-type doped semiconductor layer, a metal contact electrode can be formed first between the P-type doped semiconductor layer and the metal electrode. Therefore, in the present application, if the first electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the first electrode contact layer and the first electrode. If the second electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the second electrode contact layer and the second electrode. It is not limited here.
  • the second electrode contact layer is generally set as a P-type doped semiconductor layer. Therefore, in this application, the second electrode contact layer is a P-type doped semiconductor layer, and the photodetector further includes a layer located on the second electrode. The metal contacts the electrode with the second electrode contact layer to improve the electrical contact performance between the second electrode and the second electrode contact layer.
  • the present application does not limit the shapes of the first electrode and the second electrode.
  • the second electrode has a closed annular structure surrounding the through hole;
  • the first electrode has an annular structure arranged around the second electrode and having an opening.
  • the opening of the first electrode is to avoid a short circuit between the first electrode and the second electrode, and the first electrode and the second electrode are drawn out from two sides of the through hole respectively.
  • the shape of the groove can be set to be similar to the shape of the electrode.
  • the shape of the second groove is a closed ring surrounding the through hole;
  • the shape of a groove is an annular shape with an opening arranged around the second groove.
  • the through hole in order to avoid the photodetector from affecting the light passing through the area where the through hole is located, the through hole can penetrate all the film layers along the thickness direction of the substrate, that is, the through hole penetrates through the passivation layer, the second electrode contact layer, A photosensitive layer, a first electrode contact layer and a substrate.
  • the through hole may only penetrate the second electrode contact layer, the photosensitive layer and the first electrode contact layer.
  • the through hole can only penetrate the second electrode contact layer and the photosensitive layer.
  • the shape of the through hole is not limited in the present application, and it may be any shape, such as polymorphic shape, circular shape, oval shape, and the like.
  • shape of the through hole is circular, it can be ensured that the distance from the center of the through hole to the boundary of the through hole is the same. Moreover, the circular via is easier to realize in the process.
  • the photodetector when the second electrode contact layer is formed, a capping layer can be formed first, and then the capping layer can be doped. If the doping area covers the area where the via hole is located, the via hole will penetrate the remaining doping area after the doping area. It is the second electrode contact layer. If the doped region does not cover the region where the through hole is located, the doped region is the second electrode contact layer. Therefore, in the present application, the photodetector further includes a cover layer provided in the same layer as the second electrode contact layer, the shape of the second electrode contact layer is annular, and the cover layer is arranged around the second electrode contact layer; The intrinsic material of the second electrode contact layer and the cover layer is the same, but the doping concentration is different.
  • the cover layer is generally lightly doped, and the second electrode contact layer is generally heavily doped.
  • the intrinsic material of the second electrode contact layer and the cover layer are the same, and the electrical doping types of the two are different, for example, the cover layer is N-type doped, the second electrode contact layer is P-type doping, or the cover layer is P-type doping type doping, and the second electrode contact layer is N-type doped.
  • a chip provided by the present application includes a drive circuit, and at least one photodetector of any of the above-mentioned embodiments of the present application connected to the drive circuit.
  • the photoelectric energy detector can convert the captured optical signal into an electrical signal
  • the driving circuit can amplify the electrical signal and output it to realize the detection of the optical signal.
  • the present application provides an optical device comprising a wavelength selective switch structure and at least one photodetector, wherein the photodetector is arranged on a transmission path of monochromatic light in the free space of the wavelength selective switch structure.
  • the photodetector can directly obtain photons from the transmission path of monochromatic light without the help of other devices, it can be fixed on the transmission path of monochromatic light without complex mechanical fixing parts, which is different from using existing devices.
  • the optical fiber tap detection device the overall cost and overall structural complexity can be reduced.
  • the present application provides a method for preparing a photodetector, comprising: firstly forming a first electrode contact layer, a photosensitive layer and a second electrode contact layer on a substrate in sequence, and forming at least a through photosensitive layer and a through hole of the second electrode contact layer; then a first passivation layer is formed on the second electrode contact layer, and a first groove and a through passivation penetrating the first passivation layer and deep to the surface of the first electrode contact layer are formed The second groove of the passivation layer; finally, the first electrode and the second electrode are formed on the first passivation layer; wherein, the orthographic projections of the first electrode and the second electrode on the substrate are respectively located on the positive side of the through hole on the substrate.
  • the first electrode contact layer and the second electrode contact layer are doped semiconductor layers with opposite polarities, for example, the first electrode contact layer is a P-type doped semiconductor layer, and the second electrode contact layer is an N-type doped semiconductor layer, Alternatively, the first electrode contact layer is an N-type doped semiconductor layer, and the second electrode contact layer is a P-type doped semiconductor layer.
  • the first electrode contact layer and the second electrode contact layer form a PN junction.
  • the PN junction can convert the optical signal Converted into electrical signals, so as to realize the detection of optical signals.
  • the photodetector is not limited in structure to a photodiode (Photodiode, PD), an avalanche photodiode (Avalanche Photodiode, APD) or a heterojunction phototransistor (Hetero junction Photodiode, HPT) and the like.
  • the first electrode contact layer, the photosensitive layer and the second electrode contact layer are sequentially formed on the substrate, and through holes at least penetrating through the photosensitive layer and the second electrode contact layer are formed, which may include : First, the first electrode contact layer, the photosensitive layer and the cover layer are formed on the substrate in sequence; then the second passivation layer is formed on the cover layer, and the via hole passing through the second passivation layer is formed, so that the exposed cover The layer is annular or circular; then the exposed cover layer is doped to form a second electrode contact layer; and then a through hole penetrating at least the photosensitive layer and the second electrode contact layer is formed.
  • the first electrode contact layer, the photosensitive layer, and the second electrode contact layer are sequentially formed on the substrate, and a through hole penetrating at least the photosensitive layer and the second electrode contact layer is formed , which may include: firstly forming a first electrode contact layer, a photosensitive layer and a cover layer on the area of the substrate except the central area; then forming a second passivation layer on the cover layer, and forming a second passivation layer through The via hole of the chemical layer is formed, so that the exposed cover layer is annular; and then the exposed cover layer is doped to form a second electrode contact layer.
  • the method further includes: removing the central region of the substrate, so that in the formed photodetector, there is no film in the region where the through hole is located Floor.
  • a first passivation layer is formed on the second electrode contact layer, and a first groove that penetrates the first passivation layer and is deep to the surface of the first electrode contact layer and penetrates the passivation layer is formed
  • the second groove may include: first forming a third groove penetrating the second passivation layer, the cover layer and the photosensitive layer; then forming the first passivation layer on the second electrode contact layer, so that the first passivation layer can be formed.
  • the passivation layer covers the sidewall of the third groove to protect the sidewall of the third groove; then a second groove is formed through the first passivation layer, and a second groove through the third groove is formed in the area where the third groove is located.
  • the depth of the third groove is relatively deep, and the first electrode needs to climb over the sidewall of the third groove and the first electrode.
  • the contact layer is electrically connected. If the depth of the sidewall is deep, the first electrode is likely to be disconnected at the sidewall. Therefore, optionally, in this application, the first electrode contact layer, the photosensitive layer and the second electrode are sequentially formed on the substrate.
  • the method may further include: removing the second passivation layer, the cover layer and the photosensitive layer in the preset area, so that the remaining cover layer and the photosensitive layer are removed.
  • the sensitive layer has a ring structure. Therefore, the subsequently formed first electrode only needs to penetrate the first groove of the first passivation layer to be electrically connected to the first electrode contact layer.
  • one electrode contact layer is a P-type doped semiconductor layer
  • the other electrode contact layer is an N-type doped semiconductor layer.
  • the electrical contact performance between the P-type doped semiconductor layer and the metal electrode is not as good as the electrical contact performance between the N-type doped semiconductor layer and the metal electrode. Therefore, for the P-type doped semiconductor layer, a metal contact electrode can be formed first between the P-type doped semiconductor layer and the metal electrode. Therefore, in the present application, if the first electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the first electrode contact layer and the first electrode. If the second electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the second electrode contact layer and the second electrode. It is not limited here.
  • the second electrode contact layer is generally set as a P-type doped semiconductor layer. Therefore, in this application, after the first electrode contact layer, the photosensitive layer and the second electrode contact layer are sequentially formed on the substrate , before forming the first passivation layer on the second electrode contact layer, may further include: forming a ring-shaped metal contact electrode on the second electrode contact layer, and annealing the metal contact electrode, so that the second electrode to be formed The second electrode contact layer is electrically connected through the metal contact electrode.
  • FIG. 1 is a schematic diagram of the detection performed by an optical fiber tap detection device in the related art
  • Fig. 2 is the structural representation that the optical fiber tap detection device is applied in the WSS structure in the related art
  • FIG. 3a is a schematic top-view structural diagram of a photodetector in an embodiment of the present application.
  • Fig. 3b is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 3a along the AA' direction;
  • Fig. 3c is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 3a along the BB' direction;
  • FIG. 4 is a schematic flowchart of a method for preparing a photodetector according to an embodiment of the present application
  • FIG. 5 is a schematic flowchart of a method for preparing a photodetector provided by another embodiment of the present application.
  • 6a is a top view of a structure formed after performing the steps of the preparation method in the present application.
  • Figure 6b is a schematic cross-sectional structure diagram of the structure shown in Figure 6a along the AA' direction;
  • 7a is a top view of a structure formed after performing the steps of the preparation method in the present application.
  • Fig. 7b is a schematic cross-sectional structure diagram of the structure shown in Fig. 7a along the AA' direction;
  • FIG. 8a is a top view of a structure formed after performing the steps of the preparation method in the present application.
  • Fig. 8b is a schematic cross-sectional structure diagram of the structure shown in Fig. 8a along the AA' direction;
  • 9a is a top view of a structure formed after performing the steps of the preparation method in the present application.
  • Figure 9b is a schematic cross-sectional structure diagram of the structure shown in Figure 9a along the AA' direction;
  • 10a is a top view of a structure formed after performing the steps of the preparation method in the present application.
  • Fig. 10b is a schematic cross-sectional structure diagram of the structure shown in Fig. 10a along the AA' direction;
  • 11a is a top view of the structure formed after performing the steps of the preparation method in the present application.
  • Figure 11b is a schematic cross-sectional structure diagram of the structure shown in Figure 11a along the AA' direction;
  • Fig. 11c is a schematic cross-sectional structure diagram of the structure shown in Fig. 11a along the BB' direction;
  • Figure 12a is a top view of the structure formed after performing the steps of the preparation method in the present application.
  • Figure 12b is a schematic cross-sectional structure diagram of the structure shown in Figure 12a along the AA' direction;
  • Figure 12c is a schematic cross-sectional structure diagram of the structure shown in Figure 12a along the BB' direction;
  • Figure 13a is a top view of the structure formed after performing the steps of the preparation method in the present application.
  • Figure 13b is a schematic cross-sectional structure diagram of the structure shown in Figure 13a along the AA' direction;
  • Figure 13c is a schematic cross-sectional structure diagram of the structure shown in Figure 13a along the BB' direction;
  • FIG. 14a is a schematic top-view structural diagram of a photodetector in yet another embodiment of the present application.
  • Fig. 14b is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 14a along the AA' direction;
  • Fig. 14c is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 14a along the BB' direction;
  • FIG. 15a is a schematic top-view structural diagram of a photodetector in yet another embodiment of the present application.
  • Fig. 15b is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the AA' direction;
  • Fig. 15c is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the BB' direction;
  • 16 is a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application.
  • Figure 17a is a top view of the structure formed after performing the steps of the preparation method of the present application.
  • Fig. 17b is a schematic cross-sectional structure diagram of the structure shown in Fig. 17a along the AA' direction;
  • Fig. 18a is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 14a along the AA' direction;
  • Fig. 18b is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 14a along the BB' direction;
  • Fig. 19a is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the AA' direction;
  • Fig. 19b is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the BB' direction;
  • FIG. 20 is a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application.
  • Figure 21a is a top view of the structure formed after performing the steps of the preparation method in the present application.
  • Figure 21b is a schematic cross-sectional structure diagram of the structure shown in Figure 21a along the AA' direction;
  • Fig. 22a is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the AA' direction;
  • Fig. 22b is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the BB' direction;
  • FIG. 23 is a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application.
  • Fig. 24a is another schematic cross-sectional structure diagram of the photodetector shown in Fig. 15a along the AA' direction;
  • Figure 24b is another schematic cross-sectional structure diagram of the photodetector shown in Figure 15a along the BB' direction;
  • FIG. 25 is a schematic structural diagram of a chip provided by an embodiment of the application.
  • 26 is a schematic diagram of an arrangement of a plurality of photodetectors in a chip provided by an embodiment of the application;
  • FIG. 27 is a schematic diagram of an arrangement of a plurality of photodetectors in a chip according to another embodiment of the present application.
  • the photodetectors provided in the embodiments of the present application can be widely used in various structures based on free space transmission of light.
  • the photodetector when applied to the WSS structure, the photodetector is arranged on the transmission path of monochromatic light in the free space of the WSS structure.
  • the monochromatic beam passes through the photodetector, a small number of photons at the edge of the beam will enter the photodetector, thereby Capable of real-time tap detection of optical signals without interfering with optical transmission.
  • the photodetector can also be applied in the aerospace field.
  • the communication between some satellite devices will use free space optical communication technology, and the photodetector can perform real-time detection on these optical communications.
  • Fig. 3a exemplarily shows a schematic top view structure of a photodetector in an embodiment of the present application
  • Fig. 3b is a schematic cross-sectional structure diagram of the photodetector shown in Fig. 3a along the AA' direction
  • Fig. 3c is a photodetector shown in Fig. 3a Schematic diagram of the cross-sectional structure of the device along the BB' direction.
  • the photodetector 10 provided by the present application includes: a substrate 11, a first electrode contact layer 12, a photosensitive layer 13, a second electrode contact layer 14 and The passivation layer 15, and the first electrode 161 and the second electrode 162 located on the passivation layer 15; wherein, the first electrode contact layer 12 and the second electrode contact layer 14 are doped semiconductor layers with opposite polarities, such as the first electrode contact layer 12 and the second electrode contact layer 14.
  • An electrode contact layer 12 is a P-type doped semiconductor layer
  • the second electrode contact layer 14 is an N-type doped semiconductor layer
  • the first electrode contact layer 12 is an N-type doped semiconductor layer
  • the second electrode contact layer 14 is P-type doped semiconductor layer.
  • the photodetector 10 further includes a through hole V0 penetrating at least the photosensitive layer 13 and the second electrode contact layer 14;
  • the outer side of the orthographic projection of 11; the first electrode 161 and the second electrode 162 are insulated from each other, and the first electrode 161 passes through the first groove V1 and the first electrode 161 through the film layer between the first electrode 161 and the first electrode contact layer 12.
  • An electrode contact layer 12 is electrically connected, and the second electrode 162 is electrically connected to the second electrode contact layer 14 through the second groove V2 penetrating the passivation layer 15 .
  • the first electrode contact layer 12 and the second electrode contact layer 14 form a PN junction, which can convert the optical signal into an electrical signal when the photosensitive layer 13 captures the light passing through the via V0 , so as to realize the detection of the optical signal, and ensure that the light passing through the through hole V0 is not disturbed.
  • the photodetector is not limited in structure to a photodiode (Photodiode, PD), an avalanche photodiode (Avalanche Photodiode, APD) or a heterojunction phototransistor (Hetero junction Photodiode, HPT) and the like.
  • the photodetector of the present application can be applied to various structures based on the transmission of light in free space.
  • the photodetector can be arranged on the transmission path of monochromatic light in free space, and the monochromaticity and direction of the transmission of these light beams can be used. After the monochromatic beam passes through the through-hole area of the photodetector, a small number of photons at the edge of the beam will enter the photodetector, so that the optical signal can be detected in real time without interfering with the optical transmission.
  • the photodetector when applied to the WSS structure, the photodetector is arranged on the transmission path of the monochromatic light in the free space of the WSS structure.
  • the photodetector can directly obtain photons from the transmission path of monochromatic light without the help of other devices, it can be fixed on the transmission path of monochromatic light without complex mechanical fixing parts, which is different from using existing devices. Compared with the optical fiber tap detection device, the overall structure complexity and cost can be reduced.
  • FIG. 4 exemplarily shows a schematic flowchart of a method for fabricating a photodetector provided by an embodiment of the present application. As shown in Figure 4, the method mainly includes the following steps:
  • the contact layer is a doped semiconductor layer of opposite polarity.
  • step S401 sequentially forms the first electrode contact layer, the photosensitive layer and the second electrode contact layer on the substrate, and forms at least through holes penetrating the photosensitive layer and the second electrode contact layer, It may include: firstly forming a first electrode contact layer, a photosensitive layer and a cover layer on the substrate in sequence; then forming a second passivation layer on the cover layer, and forming a via hole penetrating the second passivation layer, so as to expose the The cover layer is annular or circular; then the exposed cover layer is doped to form a second electrode contact layer; and then a through hole penetrating at least the photosensitive layer and the second electrode contact layer is formed.
  • step S401 sequentially forms a first electrode contact layer, a photosensitive layer and a second electrode contact layer on the substrate, and forms at least through holes penetrating the photosensitive layer and the second electrode contact layer , may include: firstly forming the first electrode contact layer, the photosensitive layer and the cover layer on the substrate except the central area, so that while the first electrode contact layer, the light sensitive layer and the cover layer are formed, A through hole is formed in the central area through the first electrode contact layer, the photosensitive layer and the cover layer; then a second passivation layer is formed on the cover layer, and a via hole through the second passivation layer is formed, so that the exposed cover The layer is annular; the exposed cap layer is then doped to form a second electrode contact layer.
  • the central area is the area where the through hole is located, which may be a circular area. Further, after doping the exposed capping layer to form the second electrode contact layer, the method further includes: removing the central region of the substrate, so that the through hole still penetrates the substrate.
  • step S402 forms a first passivation layer on the second electrode contact layer, and forms a first groove and a through passivation penetrating the first passivation layer and deep to the surface of the first electrode contact layer
  • the second groove of the passivation layer may include: firstly forming a third groove penetrating the second passivation layer, the cover layer and the photosensitive layer; then forming the first passivation layer on the second electrode contact layer, so that the first passivation layer can be formed.
  • a passivation layer covers the sidewall of the third groove to protect the sidewall of the third groove; then a second groove is formed through the first passivation layer, and is formed in the area where the third groove is located The first groove penetrates through the first passivation layer, so that the first groove penetrates through the first passivation layer and is deep to the surface of the first electrode contact layer.
  • the depth of the third groove is relatively deep, and the first electrode needs to climb over the sidewall of the third groove and the first electrode.
  • the contact layer is electrically connected. If the depth of the sidewall is deep, the first electrode is likely to be disconnected at the sidewall. Therefore, optionally, in this application, the first electrode contact layer, the photosensitive layer and the second electrode are sequentially formed on the substrate.
  • the method may further include: removing the second passivation layer, the cover layer and the photosensitive layer in the preset area, so that the remaining cover layer and the photosensitive layer are removed.
  • the sensitive layer has a ring structure. Therefore, the subsequently formed first electrode only needs to penetrate the first groove of the first passivation layer to be electrically connected to the first electrode contact layer.
  • one electrode contact layer is a P-type doped semiconductor layer
  • the other electrode contact layer is an N-type doped semiconductor layer.
  • the electrical contact performance between the P-type doped semiconductor layer and the metal electrode is not as good as the electrical contact performance between the N-type doped semiconductor layer and the metal electrode. Therefore, for the P-type doped semiconductor layer, a metal contact electrode can be formed first between the P-type doped semiconductor layer and the metal electrode. Therefore, in the present application, if the first electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the first electrode contact layer and the first electrode. If the second electrode contact layer is a P-type doped semiconductor layer, a metal contact electrode may be provided between the second electrode contact layer and the second electrode. It is not limited here.
  • the second electrode contact layer is generally set as a P-type doped semiconductor layer. Therefore, in this application, the second electrode contact layer is a P-type doped semiconductor layer, and the first electrodes are sequentially formed on the substrate.
  • the method may further include: forming a ring-shaped metal contact electrode on the second electrode contact layer, and contacting the metal The contact electrode is annealed so that the second electrode to be formed is electrically connected to the second electrode contact layer through the metal contact electrode.
  • the first electrode contact layer as an N-type doped semiconductor layer
  • the second electrode contact layer as a P-type doped semiconductor layer
  • a metal contact electrode disposed between the second electrode contact layer and the second electrode as an example
  • FIG. 5 exemplarily shows a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application. As shown in Figure 5, the method mainly includes the following steps:
  • FIG. 6a is a top view of the structure formed after performing the steps of the preparation method in the present application
  • FIG. 6b is a schematic cross-sectional structure diagram of the structure shown in FIG. 6a along the AA' direction.
  • the first electrode contact layer 12 may be epitaxially grown on the substrate 11
  • the photosensitive layer 13 may be epitaxially grown on the first electrode contact layer 12
  • the cover layer 17 may be epitaxially grown on the photosensitive layer 13 .
  • the materials of the first electrode contact layer 12 , the photosensitive layer 13 and the capping layer 17 may be InP/InGaAs, Ge/Si, GaN, GaAs and other material systems, but are not limited thereto.
  • FIG. 7a is a top view of the structure formed after performing the steps of the preparation method in the present application
  • FIG. 7b is a schematic cross-sectional structure diagram of the structure shown in FIG. 7a along the AA' direction.
  • a second passivation layer 152 may be formed on the capping layer 17 first, and the second passivation layer 152 may be patterned to form via holes penetrating the second passivation layer 152 , so that the exposed cover layer 17 is annular or circular or regular polygon as shown in FIG. 7 a , which is not limited herein.
  • Figure 8a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • Figure 8b is a schematic cross-sectional structure diagram of the structure shown in Figure 8a along the AA' direction.
  • the second electrode contact layer 14 may be formed by doping the exposed capping layer 17 through a diffusion or ion implantation process. That is, the epitaxial materials of the second electrode contact layer 14 and the cover layer 17 are the same, the intrinsic materials of the two are the same, but the doping concentration is different, the cover layer 17 is generally lightly doped, and the second electrode contact layer 14 is generally heavily doped .
  • the intrinsic material of the second electrode contact layer 14 and the cover layer 17 are the same, and the electrical doping types of the two are different, for example, the cover layer 17 is N-type doped, and the second electrode contact layer 14 is P-type doped, or, The capping layer 17 is P-type doped, and the second electrode contact layer 14 is N-type doped.
  • the boundary shape of the second electrode contact layer and the shape of the subsequently formed through hole can be designed to be the same, and the center of the second electrode contact layer and the center of the subsequently formed through hole can be designed to overlap, so as to ensure photoelectric detection.
  • the performance of the device in the same plane perpendicular to the light passing direction is as centrosymmetric as possible.
  • Figure 9a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • Figure 9b is a schematic cross-sectional structure diagram of the structure shown in Figure 9a along the AA' direction.
  • a ring-shaped metal contact electrode 18 is formed on the second electrode contact layer 14, and the metal contact electrode 18 is annealed. The center of the metal contact electrode 18 may coincide with the center of the through hole to be formed.
  • FIG. 10a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • FIG. 10b is a schematic cross-sectional structure diagram of the structure shown in FIG. 10a along the AA' direction.
  • the through hole V0 may penetrate through the second electrode contact layer 14 , the photosensitive layer 13 , the first electrode contact layer 12 and the substrate 11 .
  • the through hole V0 may only penetrate the second electrode contact layer 14 , the photosensitive layer 13 and the first electrode contact layer 12 .
  • the through hole V0 may only penetrate the second electrode contact layer 14 and the photosensitive layer 13 .
  • the shape of the through hole is not limited in the present application, and it may be any shape, such as polymorphic shape, circular shape, oval shape, and the like.
  • shape of the through hole V0 is a circle, it can be ensured that the distance from the center of the through hole V0 to the boundary of the through hole V0 is the same.
  • the circular via is easier to realize in the process.
  • the cover layer 17 is arranged around the second electrode contact layer 14, and the through hole V0 penetrates through the second electrode contact layer 14 to ensure that the functional area of the photodetector (ie the first electrode contacts Layer 12 , photosensitive layer 13 and second electrode contact layer 14 are facing the edge of the via hole V0 ), so that the photons passing through the via hole V0 are easily captured, thereby improving the sensitivity.
  • FIG. 11a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • FIG. 11b is a schematic cross-sectional structure diagram of the structure shown in FIG. 11a along the AA' direction
  • FIG. 11c is the structure shown in FIG. 11a.
  • a third groove V3 is formed through the second passivation layer 152 , the photosensitive layer 13 and the capping layer 17 .
  • FIG. 12a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • FIG. 12b is a schematic cross-sectional structure diagram of the structure shown in FIG. 12a along the direction AA'
  • FIG. 12c is the structure shown in FIG. 12a Schematic diagram of the cross-sectional structure along the BB' direction.
  • the first passivation layer 151 formed on the metal contact electrode 18 may cover the sidewalls of the via hole V0 and the sidewalls of the third groove V3, so as to protect the epitaxial material at the via hole V0 and the third groove V3 to protection.
  • FIG. 13a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • FIG. 13b is a schematic cross-sectional structure diagram of the structure shown in FIG. 13a along the AA' direction
  • FIG. 13c is the structure shown in FIG. 13a. Schematic diagram of the cross-sectional structure along the BB' direction.
  • a photolithography process can be used to form the second groove V2 penetrating the first passivation layer 151, and a photolithography process can be used to form the first groove V1 penetrating the first passivation layer 151 in the region where the third groove V3 is located, so as to The first groove V1 penetrates through the first passivation layer 151 and is deep to the surface of the first electrode contact layer 12 .
  • the second groove V2 and the first groove V1 penetrating through the first passivation layer 151 may be formed simultaneously by one photolithography process.
  • FIG. 14a is a top view of a structure formed after performing the steps of the preparation method in the present application
  • FIG. 14b is a schematic cross-sectional structure diagram of the structure shown in FIG. 14a along the direction AA'
  • FIG. 14c is the structure shown in FIG. 14a Schematic diagram of the cross-sectional structure along the BB' direction.
  • the orthographic projection of the first electrode 161 and the second electrode 162 located on the first passivation layer 151 on the substrate 11 is located outside the orthographic projection of the through hole V0 on the substrate 11, and the first electrode 161 and the second electrode 162 are mutually Insulation, the first electrode 161 is electrically connected to the first electrode contact layer 12 through the first groove V1, and the second electrode 162 is electrically connected to the metal contact electrode 18 through the second groove V2.
  • the shapes of the first electrode and the second electrode are not limited.
  • the second electrode 162 has a closed annular structure surrounding the through hole V0;
  • the first electrode 161 has an annular structure arranged around the second electrode 162 and having an opening, The opening of the first electrode 161 is to prevent the first electrode 161 and the second electrode 162 from being short-circuited, and the first electrode 161 and the second electrode 162 are drawn out from two sides of the through hole, respectively.
  • the shape of the groove can be set to be similar to the shape of the electrode.
  • the shape of the second groove V2 is a closed ring surrounding the through hole V0; the first groove
  • the shape of V1 is an annular shape provided around the second groove V2 and having an opening.
  • the photodetector in the present application is formed.
  • the passivation layer is formed by two passivation layers, a first passivation layer and a second passivation layer.
  • Figures 14a to 14c can be seen for the case where the through hole V0 penetrates all the film layers.
  • the through hole V0 does not penetrate all the film layers, please refer to FIG. 15a to FIG. 15c.
  • FIG. 16 exemplarily shows a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application. As shown in Figure 16, the method mainly includes the following steps:
  • FIG. 17a is a top view of the structure formed after performing the steps of the preparation method in the present application
  • FIG. 17b is a schematic cross-sectional structure diagram of the structure shown in FIG. 17a along the AA' direction.
  • the second passivation layer 152 , the cover layer 17 and the photosensitive layer 13 in the preset area S1 are removed, so that the remaining cover layer 17 and the photosensitive layer 13 have a ring structure.
  • step S1506 is different from step S506 in the first example, and other steps can be referred to in the first embodiment, which will not be repeated here.
  • the photodetector in the present application is formed.
  • the passivation layer is formed by two passivation layers, a first passivation layer and a second passivation layer. 14a and 18a and 18b.
  • FIG. 18a is a schematic cross-sectional structure diagram of the structure shown in FIG. 14a along the AA' direction
  • FIG. 18b is the structure shown in FIG. 14a along the BB' direction.
  • FIG. 19a is a schematic cross-sectional structure diagram of the structure shown in FIG. 15a along the direction AA'
  • FIG. 19b is the structure shown in FIG. 15a along BB Schematic diagram of the cross-sectional structure in the 'direction'.
  • FIG. 20 exemplarily shows a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application. As shown in Figure 20, the method mainly includes the following steps:
  • FIG. 21a is a top view of the structure formed after performing the steps of the preparation method in the present application
  • FIG. 21b is a schematic cross-sectional structure diagram of the structure shown in FIG. 21a along the AA' direction.
  • a first electrode contact layer 12 , a photosensitive layer 13 and a capping layer 17 are epitaxially grown on the substrate 11 on regions other than the central region in sequence.
  • a through hole V0 penetrating the first electrode contact layer 12 , the photosensitive layer 13 and the capping layer 17 is formed in the central region.
  • the central area is the area where the through hole is located, which may be a circular area.
  • this example is only different from step S2001 and step S501 in the first embodiment.
  • this example has been formed in step S2001, and the through hole only penetrates the first electrode contact layer 12, the photosensitive layer 13 and the The second electrode contacts 17. Therefore, compared with Example 1, step S505 is omitted, and other steps can be referred to in Example 1, which will not be repeated here.
  • FIGS. 15a, 22a and 22b are schematic cross-sectional structure diagram of the structure shown in FIG. 15a along the direction AA', and FIG. 22b is the structure shown in FIG. 15a along BB Schematic diagram of the cross-sectional structure in the 'direction'.
  • step 2004, before step S2005 it may further include removing the central region of the substrate. Therefore, in the photodetector finally formed, the through hole penetrates through all the film layers, as shown in FIG. 14a to FIG. 14c for details.
  • FIG. 23 exemplarily shows a schematic flowchart of a method for fabricating a photodetector provided by another embodiment of the present application. As shown in Figure 23, the method mainly includes the following steps:
  • step S2305 is different from the step S2005 in the third example.
  • step S2005 refers to the third embodiment, which will not be repeated here.
  • FIG. 24a is a schematic cross-sectional structure diagram of the structure shown in FIG. 15a along the direction AA'
  • FIG. 24b is the structure shown in FIG. 15a along BB Schematic diagram of the cross-sectional structure in the 'direction'.
  • step S2304 before step S2005, it may further include removing the central region of the substrate. Therefore, in the photodetector finally formed, the through holes penetrate through all the film layers, as shown in FIG. 14a to FIG. 14c for details.
  • the first electrode contact layer, the photosensitive layer and the second electrode contact layer are stacked and arranged around the through hole, and when the photosensitive layer captures the light passing through the through hole, it can The optical signal is converted into an electrical signal, thereby realizing the detection of the optical signal.
  • the present application also provides a chip 100 , the chip 100 includes a driving circuit 101 and at least one photodetector 10 provided in any of the above-mentioned embodiments connected to the driving circuit 101 (in FIG. 25 , a photoelectric detector 10
  • the detector 10 is shown as an example).
  • the photoelectric energy detector 10 can convert the captured optical signal into an electrical signal, and the driving circuit 101 can amplify the electrical signal and output it to realize the detection of the optical signal.
  • the number and arrangement of the photodetectors 10 can be designed according to the actual application, which is not limited herein.
  • a plurality of the photodetectors 10 are arranged along the first direction.
  • a plurality of the photodetectors 10 are arranged along the first direction. arranged in a matrix.
  • the present application also provides an optical device, comprising a wavelength selective switch structure and at least one photodetector, wherein the photodetector is arranged on a transmission path of monochromatic light in the free space of the wavelength selective switch structure.
  • the monochromatic optical signal be guaranteed not to be disturbed, but also the volume of the WSS structure can be guaranteed not to increase.
  • the photodetector can directly obtain photons from the transmission path of monochromatic light without the help of other devices, it can be fixed on the transmission path of monochromatic light without complex mechanical fixing parts, which is different from using existing devices. Compared with the optical fiber tap detection device, the overall cost and overall structural complexity can be reduced.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention porte sur un photodétecteur (10), son procédé de fabrication, une puce (100) et un dispositif optique. Le photodétecteur (10) comprend : un substrat (11) ; une première couche de contact d'électrode (12), une couche photosensible (13), une deuxième couche de contact d'électrode (14), et une couche de passivation (15) qui sont empilées séquentiellement sur le substrat (11) ; et une première électrode (161) et une deuxième électrode (162). Le photodétecteur (10) comprend en outre un trou traversant (V0) au moins pénétrant à travers la couche photosensible (13) et la deuxième couche de contact d'électrode (14) ; la première couche de contact d'électrode (12) et la deuxième couche de contact d'électrode (14) sont des couches semi-conductrices dopées ayant des polarités opposées ; la première électrode (161) et la deuxième électrode (162) sont isolées l'une de l'autre ; la première électrode (161) est électriquement connectée à la première couche de contact d'électrode (12) au moyen d'un premier évidement (V1) ; la deuxième électrode (162) est électriquement connectée à la deuxième couche de contact d'électrode (14) au moyen d'un deuxième évidement (V2). Dans le photodétecteur (10), lorsque la lumière à détecter passe à travers le trou traversant (V0), la couche photosensible (13) peut capturer une partie des photons passant à travers le trou traversant (V0) pour convertir un signal optique en un signal électrique, ce qui permet d'obtenir la détection de la lumière à détecter, et de garantir que la lumière à détecter n'est pas perturbée.
PCT/CN2020/132411 2020-11-27 2020-11-27 Photodétecteur, son procédé de fabrication, puce et dispositif optique WO2022110054A1 (fr)

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PCT/CN2020/132411 WO2022110054A1 (fr) 2020-11-27 2020-11-27 Photodétecteur, son procédé de fabrication, puce et dispositif optique

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