CN115428152A - 一种单光子雪崩二极管及其制造方法、光检测器件及系统 - Google Patents
一种单光子雪崩二极管及其制造方法、光检测器件及系统 Download PDFInfo
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- CN115428152A CN115428152A CN202080099985.1A CN202080099985A CN115428152A CN 115428152 A CN115428152 A CN 115428152A CN 202080099985 A CN202080099985 A CN 202080099985A CN 115428152 A CN115428152 A CN 115428152A
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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Abstract
本申请实施例提供一种单光子雪崩二极管及其制造方法、光检测器件及系统，第一掺杂结构形成于第二掺杂结构的一侧水平表面以及侧壁，第一掺杂结构与第二掺杂结构相邻近的区域用于形成雪崩区，而第二掺杂结构和第一掺杂结构相邻近的拐角区域的高场区更容易形成雪崩区，即雪崩效应发生在第二掺杂结构和第一掺杂结构的边缘区，因此产生雪崩效应的概率较大，而覆盖材料能够提供使第一掺杂材料层中的多子从边缘向中心运动的电场，利于第一掺杂材料层中的光生载流子向雪崩区移动，因此在一定程度上提高电荷收集效率，因此该器件具有较高的量子效率，从而可以具有较高的光探测效率。
Description
PCT国内申请，说明书已公开。
Claims (19)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/102783 WO2022011701A1 (zh) | 2020-07-17 | 2020-07-17 | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115428152A true CN115428152A (zh) | 2022-12-02 |
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| CN202080099985.1A Pending CN115428152A (zh) | 2020-07-17 | 2020-07-17 | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 |
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| Country | Link |
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| CN (1) | CN115428152A (zh) |
| WO (1) | WO2022011701A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024517315A (ja) | 2021-05-10 | 2024-04-19 | エヌアイ・システムズ・インコーポレイテッド | ２次元シリコン・フォトニックｍｅｍｓスイッチ・アレイを有する擬似モノスタティックｌｉｄａｒ |
| CN117597603A (zh) * | 2021-05-19 | 2024-02-23 | 尼亚系统有限公司 | 具有微透镜阵列及集成光子开关阵列的lidar |
| CN116884981B (zh) * | 2023-06-07 | 2024-04-23 | 边际科技(珠海)有限公司 | 一种响应0.85微米雪崩二极管与平面透镜的集成结构及其制程 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4034153B2 (ja) * | 2002-09-20 | 2008-01-16 | ユーディナデバイス株式会社 | 半導体受光装置 |
| CN106298816A (zh) * | 2016-10-11 | 2017-01-04 | 天津大学 | 集成淬灭电阻的单光子雪崩二极管及其制造方法 |
| CN107946389A (zh) * | 2017-11-14 | 2018-04-20 | 重庆邮电大学 | 一种针对长波段微弱光的cmos单光子雪崩二极管 |
| CN108550592B (zh) * | 2018-04-02 | 2020-08-04 | 重庆邮电大学 | 一种低暗计数率cmos spad光电器件 |
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- 2020-07-17 WO PCT/CN2020/102783 patent/WO2022011701A1/zh active Application Filing
- 2020-07-17 CN CN202080099985.1A patent/CN115428152A/zh active Pending
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| WO2022011701A1 (zh) | 2022-01-20 |
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