CN115443545A - 一种单光子雪崩二极管及其制造方法、光检测器件及系统 - Google Patents
一种单光子雪崩二极管及其制造方法、光检测器件及系统 Download PDFInfo
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- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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Abstract
一种单光子雪崩二极管，包括第一掺杂结构(111)、第二掺杂结构(130)、第一掺杂材料层(110)、第二掺杂材料层(120)和覆盖材料(141)。第一掺杂结构(111)和第一掺杂材料层(110)的掺杂类型相反，第一掺杂结构(111)的存在会改变第一掺杂材料层(110)内部的电场，尤其是改变了第一掺杂材料层(110)中的横向电场，使第一掺杂材料层(110)中的横向电势梯度增大，同时覆盖材料促进光生载流子从边缘向中心移动，促进光生载流子向第二掺杂结构(130)的聚集，从而容易经过雪崩区被第二掺杂结构(130)所接收，降低了有效吸收区与高电场区域的大小的关联度。从而可以减少载流子移动时间，降低移动载流子移动过程中的损耗，提高电荷收集效率，提高光探测效率，减少时间抖动，提高测距精度。
Description
PCT国内申请，说明书已公开。
Claims (26)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/102748 WO2022011694A1 (zh) | 2020-07-17 | 2020-07-17 | 一种单光子雪崩二极管及其制造方法、光检测器件及系统 |
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| Publication Number | Publication Date |
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| CN115443545A true CN115443545A (zh) | 2022-12-06 |
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| WO (1) | WO2022011694A1 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114497265B (zh) * | 2022-02-11 | 2023-03-28 | 中国科学院半导体研究所 | 一种雪崩光电探测器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150028443A1 (en) * | 2013-07-23 | 2015-01-29 | Sifotonics Technologies Co., Ltd. | A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region |
| CN105810775A (zh) * | 2014-12-31 | 2016-07-27 | 湘潭大学 | 一种基于cmos图像传感器工艺的np型单光子雪崩二极管 |
| CN106449770A (zh) * | 2016-12-07 | 2017-02-22 | 天津大学 | 防止边缘击穿的环形栅单光子雪崩二极管及其制备方法 |
| CN109411550A (zh) * | 2018-10-11 | 2019-03-01 | 重庆亚川电器有限公司 | 一种p阱/逆掺杂深n阱的cmos spad光电器件 |
| US10424568B1 (en) * | 2018-06-19 | 2019-09-24 | Globalfoundries Singapore Pte. Ltd. | Image sensor with stacked SPAD and method for producing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094398B (zh) * | 2013-02-05 | 2015-05-20 | 武汉电信器件有限公司 | 一种免扩散的雪崩光电二极管及其制备方法 |
| CN104810377B (zh) * | 2015-03-04 | 2018-03-06 | 南京邮电大学 | 一种高集成度的单光子雪崩二极管探测器阵列单元 |
| CN106298816A (zh) * | 2016-10-11 | 2017-01-04 | 天津大学 | 集成淬灭电阻的单光子雪崩二极管及其制造方法 |
-
2020
- 2020-07-17 CN CN202080099980.9A patent/CN115443545A/zh active Pending
- 2020-07-17 WO PCT/CN2020/102748 patent/WO2022011694A1/zh active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150028443A1 (en) * | 2013-07-23 | 2015-01-29 | Sifotonics Technologies Co., Ltd. | A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region |
| CN105810775A (zh) * | 2014-12-31 | 2016-07-27 | 湘潭大学 | 一种基于cmos图像传感器工艺的np型单光子雪崩二极管 |
| CN106449770A (zh) * | 2016-12-07 | 2017-02-22 | 天津大学 | 防止边缘击穿的环形栅单光子雪崩二极管及其制备方法 |
| US10424568B1 (en) * | 2018-06-19 | 2019-09-24 | Globalfoundries Singapore Pte. Ltd. | Image sensor with stacked SPAD and method for producing the same |
| CN109411550A (zh) * | 2018-10-11 | 2019-03-01 | 重庆亚川电器有限公司 | 一种p阱/逆掺杂深n阱的cmos spad光电器件 |
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| Publication number | Publication date |
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| WO2022011694A1 (zh) | 2022-01-20 |
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