WO2022095794A1 - 承载装置及半导体反应腔室 - Google Patents

承载装置及半导体反应腔室 Download PDF

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Publication number
WO2022095794A1
WO2022095794A1 PCT/CN2021/127291 CN2021127291W WO2022095794A1 WO 2022095794 A1 WO2022095794 A1 WO 2022095794A1 CN 2021127291 W CN2021127291 W CN 2021127291W WO 2022095794 A1 WO2022095794 A1 WO 2022095794A1
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Prior art keywords
focus ring
ring
groove
carrying device
focusing ring
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PCT/CN2021/127291
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English (en)
French (fr)
Inventor
许金基
茅兴飞
Original Assignee
北京北方华创微电子装备有限公司
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Priority to KR1020237015320A priority Critical patent/KR102642283B1/ko
Priority to JP2023526912A priority patent/JP7457209B2/ja
Publication of WO2022095794A1 publication Critical patent/WO2022095794A1/zh
Priority to US18/313,027 priority patent/US20230274917A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, and in particular, to a carrier device and a semiconductor reaction chamber.
  • an electrostatic chuck and a focusing ring are arranged in the semiconductor reaction chamber of the etching machine.
  • the electrostatic chuck is used to support the wafer, and the focusing ring is arranged around the electrostatic chuck.
  • the plasma is concentrated, so that the etching uniformity can be improved.
  • the drive mechanism can be used to drive the thimble to lift the focus ring, so as to compensate the etched part of the focus ring by increasing the height of the focus ring , so as to ensure etching uniformity.
  • the position of the focus ring on the ejector pin may be offset, causing the shifted focus ring to lift up the wafer, causing the wafer to be lifted up.
  • the height of the wafer changes, which may affect the adsorption and position accuracy of the wafer, thereby affecting the etching process; As a result, the safety of the semiconductor reaction chamber is poor.
  • the invention discloses a carrying device and a semiconductor reaction chamber, so as to solve the problems that the focus ring affects the wafer adsorption and position accuracy and the safety of the semiconductor reaction chamber is poor.
  • the present invention adopts the following technical solutions:
  • a carrying device for carrying wafers in a semiconductor reaction chamber comprising a chuck, a focus ring assembly and a plurality of focus ring thimbles, wherein the chuck is arranged in the semiconductor reaction chamber for carrying the wafer;
  • the focus ring assembly includes: an upper focus ring and a lower focus ring, wherein the lower focus ring is arranged around the chuck; the upper surface of the lower focus ring is provided with a groove, and the upper focus ring The upper surface of the lower focusing ring, and the area inside the groove is a support area, and the support area is flush with the upper surface of the chuck, used for supporting the wafer together; when the upper focusing ring is located in the groove, the upper surface of the upper focusing ring is higher than the supporting area; the lower surface of the upper focusing ring is provided with a first a limiting portion, the first limiting portion is disposed corresponding to the groove;
  • a plurality of the focus ring thimbles are distributed at intervals along the circumference of the upper focus ring, and each of the focus ring thimbles is arranged in the carrying device in a liftable manner, and penetrates the lower focus ring and is located in the concave the bottom part of the groove, so as to be able to lift the upper focus ring when rising; the upper end of the focus ring thimble is provided with a second limit part, and the second limit part can be held up by the focus ring thimble
  • the upper focus ring cooperates with the first limiting portion to limit the horizontal position of the upper focus ring on the focus ring thimble.
  • a semiconductor reaction chamber includes the above-mentioned carrying device.
  • the carrying device disclosed in the present invention adopts a split focus ring assembly, that is, it includes an upper focus ring and a lower focus ring, the upper surface of the lower focus ring is provided with a groove, and the upper surface of the lower focus ring is located on the upper surface of the lower focus ring.
  • the area inside the groove is a support area, and the support area is flush with the upper surface of the chuck for supporting the wafer together.
  • the upper focusing ring can be raised and lowered in the above-mentioned groove, so that the height of the upper focusing ring can be increased by raising the upper focusing ring to compensate the etched part of the upper focusing ring and ensure the etching uniformity; at the same time, since the wafer is made of The lower focus ring is supported, but the lower focus ring does not rise with the upper focus ring, so as to avoid the situation that the upper focus ring pushes up the wafer, and thus will not affect the adsorption and position accuracy of the wafer.
  • each thimble of the focusing ring is arranged in the carrying device in a liftable manner, and The part of the lower focusing ring located at the bottom of the groove is penetrated, so as to be able to lift the upper focusing ring when rising; at the same time, the second limiting part can cooperate with the first limiting part when the thimble of the focusing ring lifts the upper focusing ring , to define the horizontal position of the upper focus ring on the focus ring thimble, so as to prevent the position of the upper focus ring on the focus ring thimble from shifting and tilting, so that the upper focus ring is not easy to fall from the focus ring thimble,
  • the safety of the semiconductor reaction chamber is improved.
  • the semiconductor reaction chamber disclosed in the present invention by adopting the above-mentioned bearing device disclosed in the present invention, not only can the influence on the adsorption and position accuracy of the wafer be avoided, but also the upper focusing ring can not easily fall from the thimble of the focusing ring, Thus, the safety of the semiconductor reaction chamber is improved.
  • FIG. 1 is a schematic structural diagram of a semiconductor anti-chamber disclosed in an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a carrying device disclosed in an embodiment of the present invention.
  • Fig. 3 is a partial enlarged view of Fig. 2;
  • FIG. 4 is a partial cross-sectional view of the lower focus ring in the carrying device disclosed in the embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view of the upper focus ring in the carrying device disclosed in the embodiment of the present invention.
  • FIG. 6 is a partial enlarged view of a focus ring thimble of the carrying device disclosed in an embodiment of the present invention.
  • FIG. 7 to 13 are schematic structural diagrams of a driving device of a carrying device disclosed in an embodiment of the present invention.
  • 200-carrying device 210-chuck, 220-focus ring assembly, 221-upper focus ring, 2211-limiting groove, 222-lower focus ring, 2221-inner focus ring, 2222-outer focus ring, 2222a-through hole , 223-groove, 2231-first open groove, 2232-second open groove, 2233-first mating surface, 2234-second mating surface, 2235-third mating surface, 230-base ring;
  • 400-drive device 410-first drive source, 420-first fixing bracket, 430-first adapter, 441-first slide rail assembly, 442-second slide rail assembly, 450-second drive source, 460 - the second fixing bracket, 470 - the second adapter, 480 - the third slide rail assembly, 491 - the first sensor, 492 - the second sensor;
  • an embodiment of the present invention discloses a carrying device, and the disclosed carrying device 200 is used for carrying a wafer 600 in a semiconductor reaction chamber 100 .
  • the disclosed carrier device 200 includes a chuck 210 , a focus ring assembly 220 and a plurality of focus ring thimbles 300 .
  • the chuck 210 is disposed in the semiconductor reaction chamber 100 and used to carry the wafer 600 .
  • the chuck 210 is, for example, an electrostatic chuck, which is used to fix the wafer 600 by electrostatic adsorption, so as to prevent the wafer 600 from being displaced during processing.
  • the focus ring assembly 220 includes an upper focus ring 221 and a lower focus ring 222 , wherein the lower focus ring 222 is arranged around the chuck 210 .
  • a groove 223 is provided on the upper surface of the lower focus ring 222 , and the upper focus ring 221 is arranged in the groove 223 in a liftable manner. That is to say, at least a part of the upper focusing ring 221 may descend into the groove 223 or rise outside the groove 223 .
  • the area on the upper surface of the lower focus ring 222 and inside the groove 223 is a support area, which is flush with the upper surface of the chuck 210 for supporting the wafer 600 together.
  • This focus ring assembly 220 adopts a split structure, that is, includes an upper focus ring 221 and a lower focus ring 222, wherein the lower focus ring 222 and the chuck 210 are used to jointly support the wafer 600, and at the same time, the upper focus ring is used to support the wafer 600.
  • the height of the upper focusing ring 221 can be increased by raising the upper focusing ring 221 to compensate the etched part of the upper focusing ring 221 to ensure the etching uniformity; It is supported by the lower focus ring 222, and the lower focus ring does not rise with the upper focus ring, so as to avoid the situation that the upper focus ring lifts the wafer, so that the adsorption and position accuracy of the wafer 600 will not be affected, and thus will not affect the wafer 600. etching process.
  • the upper focusing ring 221 when the upper focusing ring 221 is located in the above-mentioned groove 223, the upper surface of the upper focusing ring 221 is higher than the above-mentioned supporting area, and the part of the upper focusing ring 221 higher than the supporting area can play the role of shielding the plasma, so that the wafer can be blocked.
  • the edge etch rate is reduced, so that the etch uniformity can be improved.
  • the diameter of the inner annular surface of the upper focus ring 221 is larger than the diameter of the wafer 600 .
  • there is an annular gap between the upper focusing ring 221 and the wafer 600 and the annular gap can make the edge of the wafer more accessible to plasma, which helps to speed up the etching rate of the edge portion of the wafer.
  • the part of the upper focusing ring 221 higher than the support area can play the role of shielding the plasma and reduce the etching rate of the edge of the wafer, the upper surface of the upper focusing ring 221 and the upper surface of the wafer 600 The effect of the height difference between them is opposite to the effect of the above-mentioned annular gap.
  • the upper focusing ring 221 with the corresponding height difference and annular gap size can be selected according to specific process requirements.
  • the height difference may be greater than or equal to 2 mm and less than or equal to 4 mm; the radial width of the annular gap may be greater than or equal to 1 mm and less than or equal to 3 mm.
  • the lower surface of the upper focusing ring 221 is provided with a first limiting portion, and the first limiting portion is disposed corresponding to the groove 223; that is, when the upper focusing ring 221 is located in the groove 223, the limiting groove 2211 is also located within groove 223.
  • the plurality of focus ring thimbles 300 are distributed along the circumference of the upper focus ring 221 at intervals, so that the upper focus ring 221 can be uniformly stressed, thereby preventing the upper focus ring 221 from tilting.
  • the number of focus ring thimbles 300 may be four. Of course, in practical applications, the number of focus ring thimbles 300 may also be two, three, or more than five.
  • the carrying device further includes a driving device 400 for driving a plurality of focus ring thimbles 300 to rise and fall synchronously.
  • the driving device 400 may be a power structure such as a servo motor, an air cylinder, etc. Of course, other power structures may also be used, which are not limited herein.
  • Each focus ring thimble 300 is arranged in the above-mentioned carrying device 200 in a liftable manner, and penetrates the part of the lower focus ring 222 at the bottom of the above-mentioned groove 223, so as to be able to lift the upper focus ring 221 when rising; the focus ring thimble 300
  • the upper end of the upper focusing ring is provided with a second limiting portion, and the second limiting portion can cooperate with the above-mentioned first limiting portion when the focus ring thimble 300 lifts the upper focusing ring 221, so as to limit the upper focusing ring 221 on the focus ring thimble 300 horizontal position.
  • the horizontal position of the upper focus ring 221 on the focus ring thimble 300 is defined by the above-mentioned first and second limit parts, so that the position of the upper focus ring 221 on the focus ring thimble 300 can be prevented from being shifted and tilted, so that the The upper focus ring 221 is not easily dropped from the focus ring thimble 300, thereby improving the safety of the semiconductor reaction chamber.
  • the first limiting part is a limiting groove 2211 formed on the lower surface of the upper focus ring 221 ; as shown in FIG. 6 , the second limiting part
  • the outer surface 301 of the device is matched with the inner surface of the limiting groove 2211 , and the specific matching method is shown in FIG. 3 .
  • the position of the upper focus ring 221 in the horizontal direction can be limited by matching the limiting groove 2211 with the above-mentioned second limiting portion.
  • the moving direction of the focus ring ejector pin 300 is the vertical direction, and the focus ring ejector pin 300 is limited and matched with the limiting groove 2211 in the horizontal direction through the second limiting portion.
  • both the outer surface 301 of the second limiting portion and the inner surface of the limiting groove 2211 may be flat surfaces, that is, the upward facing surface 301 of the second limiting portion may be flat.
  • the end face is a plane, and the inner surface of the limiting groove 2211 is also a plane facing downward.
  • the shape of the orthographic projection of the outer surface 301 of the second limiting portion and the inner surface of the limiting groove 2211 on the vertical plane Both are arc-shaped, that is, the outer surface 301 of the second limiting portion is an arc-shaped convex surface, and the inner surface of the limiting groove 2211 is an arc-shaped concave surface.
  • the outer surface 301 of the second limiting portion is relatively smooth, and it is not easy to interfere with the edge of the limiting groove 2211 , so that it is not easy to cause the upper focusing ring 221 to tilt, thereby further improving the safety and reliability of the carrying device 200 . sex.
  • the orthographic projection shapes of the outer surface 301 of the second limiting portion and the inner surface of the limiting groove 2211 on the vertical plane both arc-shaped, it is helpful to improve the second limiting portion and the limiting groove.
  • the positioning accuracy of the 2211 makes the upper focus ring 221 have a high coaxiality.
  • the limiting groove 2211 is an annular groove, and the annular groove and the upper focusing ring 221 are arranged concentrically.
  • the upper focusing ring 221 can be rotated along the center of the annular groove, so that the position of the upper focusing ring 221 can be adjusted by itself by rotating, thereby further improving the This improves the stability of the upper focus ring 221 rising and falling.
  • the lower focus ring 222 may be a one-piece structure.
  • the side of the lower focus ring 222 close to the wafer 600 is easy to be etched, that is, the position where the support region in the above is located is easy to be etched. After the support area is etched, the entire lower focus ring 222 needs to be replaced, so that the service life of the lower focus ring 222 is short and the economic performance of the carrying device 200 is poor.
  • the lower focus ring 222 may include an inner focus ring 2221 and an outer focus ring 2222 , wherein the outer focus ring 2222 is arranged around the inner focus ring 2221 .
  • a groove 223 is formed on at least one of the upper surface of the inner focus ring 2221 and the upper surface of the outer focus ring 2222, and the upper surface of the inner focus ring 2221 forms the above-mentioned support area.
  • the groove 223 is divided into two parts (eg, the first open groove 2231 and the second open groove 2232 shown in FIG.
  • the grooves 223 may also be formed only on the upper surface of the inner focus ring 2221 or the upper surface of the outer focus ring 2222 .
  • the inner focus ring 2221 is disposed close to the wafer 600, so the inner focus ring 2221 is easily etched.
  • the outer focus ring 2222 is far away from the wafer 600, so the outer focus ring 2222 is not easily etched. At this time, when the outer focus ring 2222 has not been etched, only the inner focus ring 2221 can be replaced, so that the service life of the lower focus ring 222 can be improved, so that the carrying device 200 has better economic performance.
  • the diameter of the outer annular surface of the inner focusing ring 2221 and the diameter of the inner annular surface of the outer focusing ring 2222 are equal to ensure that there is no gap between them.
  • the outer ring surface of the inner focusing ring 2221 is located inside the circle where the plurality of focusing ring thimbles 300 are located; and the part of the outer focusing ring 2222 located at the bottom of the groove 223 is provided with a plurality of through holes 2222a, the number of the through holes 2222a is related to the focus
  • the number of the ring thimbles 300 is the same, and each focusing ring thimble 300 passes through each through hole 2222 a in a one-to-one correspondence so as to be able to extend into the groove 223 .
  • the distance between the focus ring ejector pin 300 and the wafer 600 can be increased, and the movement of the focus ring ejector pin 300 can prevent the wafer 600 from being affected.
  • the inner focus ring 2221 can be made of an etch-resistant material, and this solution can improve the service life of the inner focus ring 2221 .
  • the inner focusing ring 2221 can be made of materials such as quartz or silicon carbide. Quartz and silicon carbide have the advantages of extremely small thermal expansion coefficient, less generation of polluting particles, high processing performance and chemical stability.
  • the inner focus ring 2221 can also use other corrosion-resistant materials, which are not limited herein.
  • the upper focusing ring 221 can be made of an etching-resistant material, and this solution can improve the service life of the upper focusing ring 221, thereby improving the economic performance of the carrying device 200, and at the same time ensuring the etching process continuity.
  • the upper focus ring 221 can be made of silicon carbide material.
  • the upper focus ring 221 can also be made of other materials, which are not limited herein.
  • the outer ring side surface of the groove 223 is a first stepped surface, as shown in FIG.
  • the outer annular surface of the focusing ring 221 is a second stepped surface, and the second stepped surface cooperates with the first stepped surface to define the position of the upper focusing ring 221 in the groove 223 .
  • the installation positions of the upper focus ring 221 and the lower focus ring 222 can be limited, thereby improving the assembly accuracy of the upper focus ring 221 and the lower focus ring 222.
  • the upper focusing ring 221 and the lower focusing ring 222 have better coaxiality.
  • the above-mentioned first stepped surface may include, for example, a first matching surface 2233 , a second matching surface 2234 and a third matching surface 2235 connected in sequence from top to bottom, wherein the first matching surface 2233 and The third matching surfaces 2235 are all perpendicular to the upper surface of the lower focus ring 222, and the diameter of the third matching surface 2235 is smaller than the diameter of the first matching surface 2233; the diameter of the second matching surface 2234 decreases from top to bottom.
  • the above-mentioned second stepped surface includes a fourth mating surface, a fifth mating surface and a sixth mating surface that are sequentially connected from top to bottom, and the three are respectively matched with the first mating surface 2233 , the second mating surface 2234 and the third mating surface. face 2235 to match.
  • the diameter of the second matching surface 2234 decreases from top to bottom, forming a ring-shaped slope, and the upper focusing ring 221 can cooperate with the second matching surface 221 under the action of its own gravity.
  • the relative sliding occurs on the surface 2234, which can automatically correct its own position, so that when the upper focusing ring 221 is lowered into the groove 223, it can automatically reach the coaxial position with the upper focusing ring 221, thereby further improving the upper focusing ring. 221 and the coaxiality of the lower focus ring 222.
  • the diameter of the third mating surface 2235 smaller than the diameter of the first mating surface 2233, the opening size of the groove 223 can be increased, and the slope formed by the second mating surface 2234 can make the upper focusing ring 221 and the lower
  • the focus ring 222 is less likely to interfere during the descending process of the upper focus ring 221 , thereby further improving the safety of the carrying device 200 .
  • the carrying device 200 disclosed in the embodiment of the present invention may further include a casing 500 , and the casing 500 may form a closed space with the lower surface of the chuck 210 .
  • the driving device 400 set in the enclosed space.
  • the casing 500 is used to cover the driving device 400 inside, so as to prevent the driving device 400 from being directly exposed to the plasma environment.
  • the side wall of the casing 500 and the inner wall of the reaction chamber 100 can be sealed and connected through the aluminum base, which can be placed in the atmospheric state to facilitate the connection of the aluminum base to the required cables, pipelines, and the like.
  • the driving device 400 may include a first driving source 410 , a first fixing bracket 420 , a first adapter 430 , a first sliding rail assembly 441 and a second sliding rail Component 442 .
  • the fixed end of the first driving source 410 is fixedly connected with the casing 500, and of course, it can also be fixedly connected with other components such as the first fixing bracket 420, as long as it can be fixed under the chuck 210, the first driving source
  • the driving end of 410 is connected to the focus ring thimble 300 through the first adapter 430 .
  • the first drive source 410 drives the first adapter 430 to move, and the first adapter 430 drives the focus ring ejector 300 to move.
  • the first fixing bracket 420 is fixedly connected with the casing 500 , and of course, it can also be fixedly connected with other components such as the fixed end of the first driving source 410 , as long as it can be fixed under the chuck 210 That is, the first fixing bracket 420 may have a first installation surface and a second installation surface, the first installation surface and the second installation surface are both parallel to the moving direction of the focus ring thimble 300, and the first installation surface and the second installation surface are perpendicular to each other .
  • the first slide rail assembly 441 and the second slide rail assembly 442 are respectively disposed on the first mounting surface and the second mounting surface, and are slidably connected with the first adapter 430 to limit the moving direction of the focus ring ejector pin 300 .
  • the first mounting surface and the second mounting surface are perpendicular to each other, so the plane where the opening of the track of the first slide rail assembly 441 is located is perpendicular to the plane where the opening of the track of the second slide rail assembly 442 is located.
  • the directions of the rails of the slide rail assembly are oriented in two vertical directions, so that the tolerances of the rails can be prevented from accumulating in the same direction, so that the moving accuracy of the focus ring ejector pin 300 can be improved.
  • the structure of the double slide rail assembly can increase the rigidity of the focus ring thimble 300 in its moving direction, thereby making the movement of the upper focus ring 221 more stable.
  • the first slide rail assembly 441 may include a guide rail and a slider, the guide rail and the slider are slidably matched, the guide rail is mounted on the first fixing bracket 420 , and the slider is connected with the first adapter 430 .
  • the structure of the second slide rail assembly 442 is the same as that of the first slide rail assembly 441 , and details are not described herein.
  • the driving device 400 may further include a first sensor 491 and a first control unit, wherein the first sensor 491 may be used to detect the position information of the focus ring thimble 300 and feed back the position information to the first control unit; the first control unit is used to control the operation of the first driving source 410 according to the position information.
  • the first driving source 410 may be an electric cylinder, and the above-mentioned first control unit is a controller integrated in the electric cylinder.
  • the electric cylinder since the electric cylinder is not easy to generate a backlash phenomenon due to the combination of the connecting components, the electric cylinder has better positioning accuracy, thereby further improving the moving accuracy of the upper focus ring 221 .
  • the driving device 400 drives the upper focus ring 221 to raise a preset height, and the preset height is equal to The upper focus ring 221 is etched by the same amount.
  • the preset height can be between 0 and 2 mm.
  • the driving device 400 drives the upper focus ring 221 to descend until the focus ring thimble 300 moves to the lowest position, and then the driving device 400 drives the focus ring thimble 300 to rise again until the upper focus ring 221 rises to a preset height.
  • the movement gap of the focus ring thimble 300 can be eliminated, thereby improving the movement accuracy of the upper focus ring 221 .
  • the semiconductor reaction chamber 100 may further include a transfer robot 700, and the transfer robot 700 may be used to transfer the upper focus ring 221 and the wafer 600.
  • the replacement operation of the upper focusing ring 221 does not need to open the semiconductor reaction chamber 100 , thereby improving the replacement efficiency of the upper focusing ring 221 and further improving the process efficiency of the semiconductor reaction chamber 100 .
  • the upper focusing ring 221 is replaced by the transmission manipulator 700, which also reduces the labor intensity of the operator.
  • the driving device 400 is firstly controlled to drive the upper focus ring 221 to lift to a certain height, and then the transfer robot 700 is controlled to pass through the side of the semiconductor reaction chamber 100 .
  • the opening on the wall extends into the semiconductor reaction chamber 100 , and at the same time, the transfer manipulator 700 is controlled to move to the lower side of the upper focus ring 221 , and then the driving device 400 is controlled to drive the upper focus ring 221 to descend, so that the upper focus ring 221 is transferred to the transfer manipulator 700 , and then control the transfer robot 700 to transfer out of the semiconductor reaction chamber 100 through the opening on the side wall of the semiconductor reaction chamber 100 .
  • the upper focus ring 221 When the upper focus ring 221 needs to be moved into the semiconductor reaction chamber 100 , the upper focus ring 221 is placed on the transfer robot 700 , and the transfer robot 700 is controlled to protrude into the semiconductor reaction chamber 100 through the opening on the side wall of the semiconductor reaction chamber 100 Then, the driving device 400 is controlled to drive the focus ring thimble 300 to lift up, so that it pushes up the upper focus ring 221 . At this time, the upper focus ring 221 can be transferred to the focus ring thimble 300 , and then withdrawn from the transfer manipulator 700 . Then, the driving device 400 is controlled to drive the focus ring thimble 300 to descend, so as to lower the focus ring to a preset position, so as to complete the replacement operation of the upper focus ring 221 .
  • the carrier device 200 disclosed in the present invention further includes a plurality of wafer ejectors 800 , which are distributed along the circumferential direction of the chuck 210 at intervals.
  • the wafer ejector pin 800 is used to drive the wafer 600 to move up and down.
  • the lifting and lowering operation of the wafer ejector pin 800 can be realized by the driving device 400 .
  • the driving device 400 may further include a second driving source 450 , a second fixing bracket 460 , a second adapter 470 and a third sliding rail assembly 480 , wherein the fixed end of the second driving source 450 is connected to the casing 500
  • the fixed connection of course, can also be fixedly connected with other components, as long as it can be fixed under the chuck 210 .
  • the second driving source 450 drives the second adapter 470 to move, and the second adapter 470 drives the wafer ejector 800 to move.
  • the second fixing bracket 460 is fixedly connected to the fixed end of the second driving source 450, and of course, it can also be fixedly connected to other components, as long as it can be fixed under the chuck 210, the second fixing bracket 460 may have a third mounting surface, The third mounting surface is parallel to the moving direction of the wafer ejector pins 800 .
  • the third sliding rail assembly 480 is disposed on the third mounting surface and is slidably connected with the second adapter 470 to limit the moving direction of the wafer ejector pin 800 .
  • the matching precision of the slide rail assembly is high, which can improve the rigidity and stability of the lifting and lowering of the wafer ejector pin 800, so that the wafer 600 is not easily slipped when it is lifted, so that the wafer 600 is not easy to be lifted. drop, thereby improving the reliability of the semiconductor reaction chamber 100 .
  • the number of the wafer ejector pins 800 may be three, and the three wafer ejector pins 800 are evenly distributed along the circumferential direction of the chuck 210, so that the wafer 600 can be evenly supported, so that the wafer 600 can be evenly supported.
  • the support is more stable.
  • the number of wafer ejectors 800 may also be other, which is not limited herein.
  • the structure of the third slide rail assembly 480 is the same as that of the first slide rail assembly 441 , the guide rail in the third slide rail assembly 480 is connected to the second fixing bracket 460 , and the slider in the third slide rail assembly 480 Connect with the second adapter 470 .
  • the driving device 400 may further include a second sensor 492 and a second control unit, wherein the second sensor 492 may be used to detect the position information of the wafer ejector 800, and feed back the position information to the second control unit;
  • the second control unit is used to control the operation of the second driving source 450 according to the position information.
  • the second driving source 450 may be an electric cylinder, and the above-mentioned second control unit is a controller integrated in the electric cylinder.
  • the driving device 400 may adopt a dual-axis driving source, and the first driving source 410 and the second driving source 450 are two different driving shafts on the dual-axis driving source. That is to say, the drive device 400 is provided with a drive source, the first adapter 430 and the second adapter 470 are connected to different drive shafts on the drive source, and the drive shaft connected to the first adapter 430 is used for For driving the focus ring ejector 300 , the drive shaft connected to the second adapter 470 is used to drive the wafer ejector 800 .
  • the first fixing bracket 420 and the second fixing bracket 460 may have an integrated structure.
  • the first sliding rail assembly 441 , The second slide rail assembly 442 and the third slide rail assembly 480 are both mounted on the same fixed bracket, so that the components of the carrying device 200 are less, and the composition structure of the carrying device 200 is simplified.
  • the carrier device 200 disclosed in the embodiment of the present invention may further include a base ring 230 , the base ring 230 is disposed around the chuck 210 , and the base ring 230 is used to support the lower focus ring 222 .
  • the bottom of the base ring 230 is provided with an interface disk, the focusing ring thimble 300 is inserted from one side of the interface disk, the bellows is sheathed on the focusing ring thimble 300, one end of the bellows is connected with the focusing ring thimble 300 and the other end is connected with the interface disk, keeping the The sealing effect of the focus ring thimble 300 during the moving process.
  • an embodiment of the present invention further discloses a semiconductor reaction chamber, and the disclosed semiconductor includes the carrier device of any of the above embodiments.
  • the semiconductor reaction chamber disclosed in the present invention by adopting the above-mentioned carrying device disclosed in the present invention, not only can the upper focus ring be raised and the wafer adsorption and positional accuracy be prevented from being affected, but also the upper focus ring can not be easily removed from the chamber. The thimble of the focus ring falls off, thereby improving the safety of the semiconductor reaction chamber.

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Abstract

本发明公开一种承载装置及半导体反应腔室，该承载装置中，聚焦环组件包括：上聚焦环和下聚焦环，下聚焦环的上表面设有凹槽，上聚焦环可升降地设置于凹槽内；下聚焦环的上表面上，且位于凹槽内侧的区域为支撑区域，支撑区域和卡盘的上表面相平齐，用于共同支撑晶圆；上聚焦环在位于凹槽内时，上聚焦环的上表面高于支撑区域；上聚焦环的下表面设有第一限位部，第一限位部对应凹槽设置；每个聚焦环顶针的上端设有第二限位部，第二限位部能够在聚焦环顶针托起上聚焦环时与第一限位部相配合，以限定上聚焦环在聚焦环顶针上的水平位置。上述方案能够解决聚焦环对晶圆的吸附和位置精度产生影响和半导体反应腔室的安全性能较差的问题。

Description

承载装置及半导体反应腔室 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种承载装置及半导体反应腔室。
背景技术
随着科技的快速发展，智能手机、平板电脑等电子产品已经成为现代人生活中不可或缺的产品。这些电子产品内部包括有许多半导体芯片，而半导体芯片的主要制造材料就是晶圆。晶圆需要刻蚀出线路图案，通常采用半导体工艺设备对晶圆进行刻蚀。
以刻蚀机为例，刻蚀机的半导体反应腔室内设置有静电卡盘和聚焦环，静电卡盘用来支撑晶圆，聚焦环环绕静电卡盘设置，聚焦环能够对半导体反应腔室内的等离子体进行汇聚，从而能够提高刻蚀均匀性。
然而，在半导体反应腔室刻蚀晶圆的过程中，由于聚焦环的顶面以及凹槽上表面也会被刻蚀，导致聚焦环的厚度减小，从而使得晶圆的边缘的刻蚀速率加快，进而使得晶圆的边缘区域与晶圆的中心区域的刻蚀速率相差较大，从而造成刻蚀均匀性较差。为了提高刻蚀均匀性，当聚焦环的顶面以及凹槽上表面被刻蚀后，可以利用驱动机构驱动顶针顶起聚焦环，以通过增加聚焦环的高度来补偿聚焦环被刻蚀的部分，从而保证刻蚀均匀性。
但是，由于聚焦环只是放置在顶针上，一方面，在驱动机构驱动顶针顶起聚焦环时，聚焦环在顶针上的位置可能出现偏移，导致偏移后的聚焦环顶起晶圆，使晶圆的高度产生变化，从而可能对晶圆的吸附和位置精度产生影响，进而影响刻蚀工艺；另一方面，聚焦环在受到顶针顶升的冲击力时，很容易从顶针上掉落，从而造成半导体反应腔室的安全性较差。
发明内容
本发明公开一种承载装置及半导体反应腔室，以解决聚焦环对晶圆的吸附和位置精度产生影响和半导体反应腔室的安全性较差的问题。
为了解决上述问题，本发明采用下述技术方案：
一种承载装置，用于半导体反应腔室中承载晶圆，包括卡盘、聚焦环组件和多个聚焦环顶针，其中，所述卡盘设置于所述半导体反应腔室内，用于承载所述晶圆；
所述聚焦环组件包括：上聚焦环和下聚焦环，其中，所述下聚焦环环设于所述卡盘的周围；所述下聚焦环的上表面设有凹槽，所述上聚焦环可升降地设置于所述凹槽内；所述下聚焦环的上表面上，且位于所述凹槽内侧的区域为支撑区域，所述支撑区域和所述卡盘的上表面相平齐，用于共同支撑所述晶圆；所述上聚焦环在位于所述凹槽内时，所述上聚焦环的上表面高于所述支撑区域；所述上聚焦环的下表面设有第一限位部，所述第一限位部对应所述凹槽设置；
多个所述聚焦环顶针沿所述上聚焦环的周向间隔分布，每个所述聚焦环顶针以可升降的方式设置于所述承载装置内，并贯穿所述下聚焦环位于所述凹槽底部的部分，以能够在上升时托起所述上聚焦环；所述聚焦环顶针的上端设有第二限位部，所述第二限位部能够在所述聚焦环顶针托起所述上聚焦环时与所述第一限位部相配合，以限定所述上聚焦环在所述聚焦环顶针上的水平位置。
一种半导体反应腔室，包括上述的承载装置。
本发明采用的技术方案能够达到以下有益效果：
本发明公开的承载装置中，其采用分体式的聚焦环组件，即，包括上聚焦环和下聚焦环，该下聚焦环的上表面设有凹槽，且下聚焦环的上表面上，位于凹槽内侧的区域为支撑区域，该支撑区域和卡盘的上表面相平齐，用于 共同支撑晶圆。上聚焦环可升降地设置于上述凹槽内，从而可以通过使上聚焦环上升来增加其高度，以补偿上聚焦环被刻蚀的部分，保证刻蚀均匀性；同时，由于晶圆是由下聚焦环支撑，而下聚焦环不随上聚焦环上升，这样可以避免出现上聚焦环顶起晶圆的情况，从而不会对晶圆的吸附和位置精度产生影响。此外，通过在上聚焦环的下表面设有第一限位部，且在聚焦环顶针的上端设有第二限位部，每个聚焦环顶针以可升降的方式设置于承载装置内，并贯穿下聚焦环位于凹槽底部的部分，以能够在上升时托起上聚焦环；同时，上述第二限位部能够在聚焦环顶针托起上聚焦环时与上述第一限位部相配合，以限定上聚焦环在聚焦环顶针上的水平位置，从而能够防止上聚焦环在聚焦环顶针上的位置发生偏移以及发生倾斜，从而使得上聚焦环不容易从聚焦环顶针上掉落，进而提高了半导体反应腔室的安全性。
本发明公开的半导体反应腔室，其通过采用本发明公开的上述承载装置，不仅可以避免对晶圆的吸附和位置精度产生影响，而且可以使得上聚焦环不容易从聚焦环顶针上掉落，进而提高了半导体反应腔室的安全性。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本发明实施例公开的半导体反腔室的结构示意图；
图2为本发明实施例公开的承载装置的结构示意图；
图3为图2的局部放大图；
图4为本发明实施例公开的承载装置中，下聚焦环的局部剖视图；
图5为本发明实施例公开的承载装置中，上聚焦环的局部剖视图；
图6为本发明实施例公开的承载装置的聚焦环顶针的局部放大图；
图7～图13为本发明实施例公开的承载装置的驱动装置的结构示意图。
附图标记说明：
100-半导体反应腔室；
200-承载装置、210-卡盘、220-聚焦环组件、221-上聚焦环、2211-限位槽、222-下聚焦环、2221-内聚焦环、2222-外聚焦环、2222a-通孔、223-凹槽、2231-第一开口槽、2232-第二开口槽、2233-第一配合面、2234-第二配合面、2235-第三配合面、230-基环；
300-聚焦环顶针、301-第二限位部的外表面；
400-驱动装置、410-第一驱动源、420-第一固定支架、430-第一转接件、441-第一滑轨组件、442-第二滑轨组件、450-第二驱动源、460-第二固定支架、470-第二转接件、480-第三滑轨组件、491-第一传感器、492-第二传感器；
500-机壳；
600-晶圆；
700-传输机械手；
800-晶圆顶针。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
以下结合附图，详细说明本发明各个实施例公开的技术方案。
如图1和图2所示，本发明实施例公开一种承载装置，所公开的承载装置200用于在半导体反应腔室100中承载晶圆600。所公开的承载装置200包括卡盘210、聚焦环组件220和多个聚焦环顶针300。
卡盘210设置于半导体反应腔室100内，且用于承载晶圆600。该卡盘 210例如为静电卡盘，用于采用静电吸附的方式固定晶圆600，防止晶圆600在加工的过程中发生位置偏移。
聚焦环组件220包括上聚焦环221和下聚焦环222，其中，下聚焦环222环设于卡盘210的周围。如图3所示，下聚焦环222的上表面设有凹槽223，上聚焦环221可升降地设置于凹槽223内。也就是说，上聚焦环221的至少一部分可以下降至凹槽223内，也可以上升至凹槽223外。下聚焦环222的上表面上，且位于上述凹槽223内侧的区域为支撑区域，该支撑区域和卡盘210的上表面相平齐，用于共同支撑晶圆600。此种聚焦环组件220通过采用分体式结构，即，包括上聚焦环221和下聚焦环222，其中，利用下聚焦环222与卡盘210用于共同支撑晶圆600，同时通过使上聚焦环221可升降地设置于上述凹槽223内，可以通过使上聚焦环221上升来增加其高度，以补偿上聚焦环221被刻蚀的部分，保证刻蚀均匀性；同时，由于晶圆600是由下聚焦环222支撑，而下聚焦环不随上聚焦环上升，这样可以避免出现上聚焦环顶起晶圆的情况，从而不会对晶圆600的吸附和位置精度产生影响，进而不会影响刻蚀工艺。
而且，上聚焦环221在位于上述凹槽223内时，上聚焦环221的上表面高于上述支撑区域，上聚焦环221高出支撑区域的部分可以起到遮挡等离子体的作用，使圆晶的边缘刻蚀速率降低，从而可以提高刻蚀均匀性。
在一些可选的实施例中，上聚焦环221的内环面的直径大于晶圆600的直径。这样，上聚焦环221与晶圆600之间具有环形间隙，该环形间隙可以使晶圆的边缘处更加容易接触到等离子体，有助于加快晶圆的边缘部分的刻蚀速率。需要说明的是，由于上聚焦环221高出支撑区域的部分可以起到遮挡等离子体的作用，使圆晶的边缘刻蚀速率降低，因此上聚焦环221的上表面与晶圆600的上表面之间的高度差所起到的作用与上述环形间隙的作用相反，因此在实际应用中，可以根据具体的工艺需求选择相应高度差和环形间 隙尺寸的上聚焦环221。可选的，上述高度差可以大于等于2mm，且小于等于4mm；上述环形间隙的径向宽度可以大于等于1mm，且小于等于3mm。
此外，上聚焦环221的下表面设有第一限位部，该第一限位部对应凹槽223设置；也就是说，当上聚焦环221位于凹槽223内的情况下，限位槽2211也位于凹槽223内。多个聚焦环顶针300沿上聚焦环221的周向间隔分布，以能够使得上聚焦环221受力均匀，从而防止上聚焦环221发生倾斜现象。可选地，聚焦环顶针300的数量可以为四个，当然，在实际应用中，聚焦环顶针300的数量还可以为两个、三个或者五个以上。
在一些可选的实施例中，承载装置还包括驱动装置400，用于驱动多个聚焦环顶针300同步升降。可选地，驱动装置400可以为伺服电机、气缸等动力结构，当然，还可以采用其他动力结构，本文对此不作限制。
每个聚焦环顶针300以可升降的方式设置于上述承载装置200内，并贯穿下聚焦环222位于上述凹槽223底部的部分，以能够在上升时托起上聚焦环221；聚焦环顶针300的上端设有第二限位部，该第二限位部能够聚焦环顶针300托起上聚焦环221时与上述第一限位部相配合，以限定上聚焦环221在聚焦环顶针300上的水平位置。借助上述第一限位部和第二限位部限定上聚焦环221在聚焦环顶针300上的水平位置，能够防止上聚焦环221在聚焦环顶针上的位置发生偏移以及发生倾斜，从而使得上聚焦环221不容易从聚焦环顶针300上掉落，进而提高了半导体反应腔室的安全性。
在一些可选的实施例中，如图5所示，上述第一限位部为形成在上聚焦环221的下表面上的限位槽2211；如图6所示，上述第二限位部的外表面301与限位槽2211的内表面相配合，具体配合方式如图3所示。通过使限位槽2211与上述第二限位部相配合，可以限制上聚焦环221在水平方向上的位置。具体地，聚焦环顶针300的移动方向为竖直方向，聚焦环顶针300通过上述第二限位部与限位槽2211沿水平方向限位配合。
在一些可选的实施例中，上述第二限位部的外表面301与限位槽2211的内表面均可以为平面，也就是说，上述第二限位部的外表面301中朝上的端面为平面，而限位槽2211的内表面中朝下的表面也为平面，此时，聚焦环顶针300在伸入限位槽2211的过程中，上述第二限位部的端面容易与限位槽2211的边缘发生干涉，从而容易造成上聚焦环221倾斜，进而容易使得上聚焦环221掉落。
基于此，在另一种可选的实施例中，如图5和图6所示，上述第二限位部的外表面301与限位槽2211的内表面在竖直面上的正投影形状均为弧形，即，上述第二限位部的外表面301为弧形凸面，限位槽2211的内表面为弧形凹面。此时，上述第二限位部的外表面301相对平滑，不容易与限位槽2211的边缘发生干涉，从而不容易造成上聚焦环221倾斜，进而进一步提高了承载装置200的安全性和可靠性。另外，通过使上述第二限位部的外表面301与限位槽2211的内表面在竖直面上的正投影形状均为弧形，有助于提高上述第二限位部与限位槽2211的定位精度，使得上聚焦环221具有较高的同轴度。
在一些可选的实施例中，限位槽2211为环形凹槽，且该环形凹槽和上聚焦环221同心设置。此方案能够在限制上聚焦环221在水平方向上的位置的基础上，使上聚焦环221可以沿环形凹槽的中心转动，从而可以上聚焦环221的位置可以通过旋转自行调整，进而进一步提高了上聚焦环221升降的稳定性。
在一些可选的实施例中，下聚焦环222可以为一体式结构件。然而，下聚焦环222靠近晶圆600的一侧容易被刻蚀，也就是上文中的支撑区域所在的位置容易被刻蚀。当支撑区域被刻蚀后需要更换整个下聚焦环222，从而使得下聚焦环222的使用寿命较短，承载装置200的经济性能较差。
基于此，在另一种可选的实施例中，下聚焦环222可以包括内聚焦环2221和外聚焦环2222，其中，外聚焦环2222环设于内聚焦环2221的周围。 在内聚焦环2221的上表面和外聚焦环2222的上表面中的至少一者上形成凹槽223，且内聚焦环2221的上表面形成上述支撑区域。例如，如图4所示，凹槽223分为两个部分(例如图4中示出的第一开口槽2231和第二开口槽2232)分别形成在内聚焦环2221的上表面和外聚焦环2222的上表面上，这样，可以减小凹槽223分别在内聚焦环2221和外聚焦环2222上占用的空间，从而可以提高内聚焦环2221和外聚焦环2222的强度。当然，在实际应用中，凹槽223也可以仅形成在内聚焦环2221的上表面或者外聚焦环2222的上表面上。此方案中，内聚焦环2221靠近晶圆600设置，因此内聚焦环2221容易被刻蚀。外聚焦环2222离晶圆600的位置较远，因此外聚焦环2222不容易被刻蚀。此时，在外聚焦环2222还未被刻蚀的情况下，可以仅更换内聚焦环2221，从而可以提高下聚焦环222的使用寿命，从而使得承载装置200具有较好的经济性能。
在一些可选的实施例中，如图4所示，内聚焦环2221的外环面的直径和外聚焦环2222的内环面的直径相等，以保证二者之间没有间隙。而且，内聚焦环2221的外环面位于多个聚焦环顶针300所在圆周的内侧；并且，外聚焦环2222位于凹槽223底部的部分设置有多个通孔2222a，通孔2222a的数量与聚焦环顶针300的数量相同，且各个聚焦环顶针300一一对应地穿过各个通孔2222a，以能够伸入凹槽223。通过将通孔2222a设置在外聚焦环2222上，可以增加聚焦环顶针300与晶圆600之间的距离，而且可以避免聚焦环顶针300的运动对晶圆600产生影响。
由于内聚焦环2221容易被刻蚀，因此，在另一种可选的实施例中，内聚焦环2221可以为耐刻蚀材质，此方案能够提高内聚焦环2221的使用寿命。可选地，内聚焦环2221可以采用石英或者碳化硅等材料制作，石英与碳化硅具有热膨胀系数极小、不容易产生污染颗粒物、较高的加工性能以及化学性稳定的优点。当然内聚焦环2221还可以采用其他耐刻蚀材料，本文不作限制。
在另一种可选的实施例中，上聚焦环221可以为耐刻蚀材质，此方案能够提高上聚焦环221的使用寿命，从而提高承载装置200的经济性能，同时还能够保证刻蚀工艺的连续性。可选地，由于上聚焦环221极易被刻蚀，因此上聚焦环221可以采用碳化硅材料制作。当然，上聚焦环221还可以采用其他材料制作，本文不作限制。
在一些可选的实施例中，为了提高上聚焦环221和下聚焦环222的装配精度，如图4所示，凹槽223的外环侧面为第一阶梯面，如图3所示，上聚焦环221的外环面为第二阶梯面，该第二阶梯面与第一阶梯面相配合，以限定上聚焦环221在凹槽223中的位置。此方案中，借助上述第二阶梯面与第一阶梯面相配合，能够对上聚焦环221与下聚焦环222的安装位置进行限定，从而提高了上聚焦环221与下聚焦环222的装配精度，使得上聚焦环221与下聚焦环222具有较好的同轴度。
进一步地，如图4所示，上述第一阶梯面例如可以包括由上而下依次连接的第一配合面2233、第二配合面2234和第三配合面2235，其中，第一配合面2233和第三配合面2235均垂直于下聚焦环222的上表面，且第三配合面2235的直径小于第一配合面2233的直径；第二配合面2234的直径由上而下递减。对应地，上述第二阶梯面包括由上而下依次连接的第四配合面、第五配合面和第六配合面，三者分别与第一配合面2233、第二配合面2234和第三配合面2235相配合。此时，当上聚焦环221与下聚焦环222装配时，由于第二配合面2234的直径由上而下递减，形成环形坡面，上聚焦环221可以在自身重力的作用下在第二配合面2234上发生相对滑动，进而能够对自身的位置自动校正，从而能够在上聚焦环221下降至凹槽223内时，自动到达与上聚焦环221同轴的位置处，从而进一步提高上聚焦环221和下聚焦环222的同轴度。另外，通过使第三配合面2235的直径小于第一配合面2233的直径，可以增大凹槽223的开口尺寸，且利用第二配合面2234形成的坡面，可 以使得上聚焦环221与下聚焦环222在上聚焦环221下降的过程中不容易发生干涉，从而进一步提高了承载装置200安全性。
在一些可选的实施例中，如图1所示，本发明实施例公开的承载装置200还可以包括机壳500，该机壳500可以与卡盘210的下表面构成封闭空间，驱动装置400设置于该封闭空间内。此时，机壳500用于将驱动装置400罩设在内部，从而防止驱动装置400直接暴露在等离子环境中。进一步地，机壳500的侧壁和反应腔室100的内壁可以通过铝基座密封相连，可使铝基座置于大气状态下，方便铝基座连接所需要的电缆、管路等。
本文公开一种驱动装置400的具体结构，当然还可以采用其他结构，本文对此不作限制。具体地，如图7、图8和图9所示，驱动装置400可以包括第一驱动源410、第一固定支架420、第一转接件430、第一滑轨组件441和第二滑轨组件442。其中，第一驱动源410的固定端与机壳500固定连接，当然也可以与诸如第一固定支架420等的其他部件固定连接，只要能够固定于卡盘210的下方即可，第一驱动源410的驱动端通过第一转接件430与聚焦环顶针300连接。
具体的操作过程中，第一驱动源410驱动第一转接件430移动，第一转接件430带动聚焦环顶针300移动。
如图10至图13所示，第一固定支架420与机壳500固定连接，当然也可以与诸如第一驱动源410的固定端等的其他部件固定连接，只要能够固定于卡盘210的下方即可，第一固定支架420可以具有第一安装面和第二安装面，第一安装面和第二安装面均平行聚焦环顶针300的移动方向，且第一安装面和第二安装面相垂直。第一滑轨组件441和第二滑轨组件442分别设置于第一安装面和第二安装面上，且均与第一转接件430滑动连接，用以限定聚焦环顶针300的移动方向。
此方案中，第一安装面和第二安装面相垂直，因此第一滑轨组件441的 轨道的开口所在的平面与第二滑轨组件442的轨道的开口所在的平面相垂直，此时两个滑轨组件的轨道的方向朝向两个垂直的方向上，因此能够避免轨道的公差在同一个方向上累加，从而能够提高聚焦环顶针300的移动精度。另外，双滑轨组件的结构能够增加聚焦环顶针300在其移动方向上的刚度，进而使得上聚焦环221移动更加平稳。
可选地，第一滑轨组件441可以包括导轨和滑块，导轨与滑块滑动配合，导轨安装于第一固定支架420上，滑块与第一转接件430相连接。上文中的第二滑轨组件442与第一滑轨组件441的结构相同，本文不作赘述。
在另一种可选的实施例中，驱动装置400还可以包括第一传感器491和第一控制单元，其中，第一传感器491可以用于检测聚焦环顶针300的位置信息，并将位置信息反馈至第一控制单元；该第一控制单元用于根据位置信息控制第一驱动源410的工作。此方案中，借助第一传感器491和第一控制单元，能够精确的控制聚焦环顶针300移动，进而使得上聚焦环221的移动精度较高。例如，第一驱动源410可以为电动缸，上述第一控制单元为集成在电动缸中的控制器。另外，由于电动缸不容易因为连接部件组合而产生齿间隙现象，因此电动缸具有更好的定位精度，从而进一步提高了上聚焦环221的移动精度。
为了提高上聚焦环221的补偿精度，在另一种可选的实施例中，当上聚焦环221首次被刻蚀后，驱动装置400驱动上聚焦环221升高预设高度，预设高度与上聚焦环221被刻蚀量相同。预设高度可以为0～2mm之间。驱动装置400驱动上聚焦环221下降，直至聚焦环顶针300运动至最低位置，然后驱动装置400再次驱动聚焦环顶针300上升，直至上聚焦环221上升至预设高度。此时，通过两次抬升上聚焦环221，可以消除聚焦环顶针300的移动间隙，从而提高上聚焦环221的移动精度。
为了方便更换上聚焦环221，在另一种可选的实施例中，半导体反应腔 室100还可以包括传输机械手700，传输机械手700可以用于传输上聚焦环221和晶圆600。此方案中，上聚焦环221的更换操作无需打开半导体反应腔室100，从而提高了上聚焦环221更换的效率，进而提高了半导体反应腔室100的工艺效率。另外，上聚焦环221通过传输机械手700更换，也降低了操作人员的劳动强度。
具体的操作过程中，当需要将上聚焦环221移出半导体反应腔室100时，首先控制驱动装置400驱动上聚焦环221抬升至一定的高度，再控制传输机械手700通过半导体反应腔室100的侧壁上的开口伸入半导体反应腔室100内，同时控制传输机械手700移动至上聚焦环221的下侧，然后控制驱动装置400驱动上聚焦环221下降，使上聚焦环221转载至传输机械手700上，再控制传输机械手700由半导体反应腔室100的侧壁上的开口传输出半导体反应腔室100之外。
当需要将上聚焦环221移入半导体反应腔室100时，上聚焦环221被放置在传输机械手700上，控制传输机械手700通过半导体反应腔室100的侧壁上的开口伸入半导体反应腔室100内，再控制驱动装置400驱动聚焦环顶针300上升，以使其顶起上聚焦环221，此时上聚焦环221可以转载至聚焦环顶针300上，然后撤出传输机械手700。再控制驱动装置400驱动聚焦环顶针300下降，以将聚焦环下降至预设位置，从而完成上聚焦环221的更换操作。
本发明公开的承载装置200还包括多个晶圆顶针800，且沿卡盘210的周向间隔分布。该晶圆顶针800用于驱动晶圆600升降。晶圆顶针800的升降操作可以通过驱动装置400实现。可选地，驱动装置400还可以包括第二驱动源450、第二固定支架460和第二转接件470和第三滑轨组件480，其中，第二驱动源450的固定端与机壳500固定连接，当然也可以与其他部件固定连接，只要能够固定于卡盘210的下方即可，第二驱动源450的驱动端通过 第二转接件470与晶圆顶针800连接。
具体的操作过程中，第二驱动源450驱动第二转接件470移动，第二转接件470带动晶圆顶针800组件移动。
第二固定支架460与第二驱动源450的固定端固定连接，当然也可以与其他部件固定连接，只要能够固定于卡盘210的下方即可，第二固定支架460可以具有第三安装面，该第三安装面平行于晶圆顶针800的移动方向。第三滑轨组件480设置于第三安装面上，且与第二转接件470滑动连接，用以限定晶圆顶针800的移动方向。
此方案中，滑轨组件的配合精度较高，进而能够提高晶圆顶针800的升降的刚度和平稳性，从而使得晶圆600在被顶起时不容易发生滑动，从而使得晶圆600不容易掉落，进而提高半导体反应腔室100的可靠性。
可选的，晶圆顶针800的数量可以为三个，三个晶圆顶针800沿卡盘210的周向均匀分布，从而可以使晶圆600能够受到均匀地支撑力，使得对晶圆600的支撑更加稳定。当然，晶圆顶针800还可以为其他数量，本文对此不作限制。
可选地，第三滑轨组件480的结构与第一滑轨组件441的结构相同，第三滑轨组件480中的导轨与第二固定支架460连接，第三滑轨组件480中的滑块与第二转接件470连接。
上述实施例中，驱动装置400还可以包括第二传感器492和第二控制单元，其中，第二传感器492可以用于检测晶圆顶针800的位置信息，并将位置信息反馈至第二控制单元；该第二控制单元用于根据位置信息控制第二驱动源450的工作。此方案中，借助第二传感器492和第二控制单元，能够精确的控制晶圆顶针800移动，进而使得晶圆600的移动精度较高。例如，第二驱动源450可以为电动缸，上述第二控制单元为集成在电动缸中的控制器。
可选地，驱动装置400可以采用双轴驱动源，第一驱动源410和第二驱 动源450为双轴驱动源上的两个不同的驱动轴。也就是说，驱动装置400中设置有一个驱动源，第一转接件430和第二转接件470与驱动源上不同的驱动轴相连接，第一转接件430所连接的驱动轴用于驱动聚焦环顶针300，第二转接件470所连接的驱动轴用于驱动晶圆顶针800。
上述实施例中，由于第一固定支架420和第二固定支架460均为非运动件，因此第一固定支架420和第二固定支架460可以为一体式结构，此时，第一滑轨组件441、第二滑轨组件442和第三滑轨组件480均安装于同一个固定支架上，因此使得承载装置200的零部件较少，进而简化了承载装置200的组成结构。
本发明实施例公开的承载装置200还可以包括基环230，基环230环绕卡盘210设置，基环230用于支撑下聚焦环222。基环230的下方设置有接口盘，聚焦环顶针300从接口盘一侧插入，波纹管外套于聚焦环顶针300上，波纹管的一端与聚焦环顶针300连接和另一端与接口盘连接，保持对聚焦环顶针300在移动过程中的密封效果。
基于本发明上述任一实施例的承载装置，本发明实施例还公开一种半导体反应腔室，所公开的半导体包括上述任一实施例的承载装置。
本发明公开的半导体反应腔室，其通过采用本发明公开的上述承载装置，不仅可以避免因上聚焦环的上升而对晶圆的吸附和位置精度产生影响，而且可以使得上聚焦环不容易从聚焦环顶针上掉落，进而提高了半导体反应腔室的安全性。
本发明上文实施例中重点描述的是各个实施例之间的不同，各个实施例之间不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
以上所述仅为本发明的实施例而已，并不用于限制本发明。对于本领域技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原理之 内所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (14)

  1. 一种承载装置，用于在半导体反应腔室中承载晶圆，其特征在于，包括卡盘、聚焦环组件和多个聚焦环顶针，其中，所述卡盘设置于所述半导体反应腔室内，用于承载所述晶圆；
    所述聚焦环组件包括：上聚焦环和下聚焦环，其中，所述下聚焦环环设于所述卡盘的周围；所述下聚焦环的上表面设有凹槽，所述上聚焦环可升降地设置于所述凹槽内；所述下聚焦环的上表面上，且位于所述凹槽内侧的区域为支撑区域，所述支撑区域和所述卡盘的上表面相平齐，用于共同支撑所述晶圆；所述上聚焦环在位于所述凹槽内时，所述上聚焦环的上表面高于所述支撑区域；所述上聚焦环的下表面设有第一限位部，所述第一限位部对应所述凹槽设置；
    多个所述聚焦环顶针沿所述上聚焦环的周向间隔分布，每个所述聚焦环顶针以可升降的方式设置于所述承载装置内，并贯穿所述下聚焦环位于所述凹槽底部的部分，以能够在上升时托起所述上聚焦环；所述聚焦环顶针的上端设有第二限位部，所述第二限位部能够在所述聚焦环顶针托起所述上聚焦环时与所述第一限位部相配合，以限定所述上聚焦环在所述聚焦环顶针上的水平位置。
  2. 根据权利要求1所述的承载装置，其特征在于，所述下聚焦环包括内聚焦环和外聚焦环，所述外聚焦环环设于所述内聚焦环的周围；
    在所述内聚焦环的上表面和所述外聚焦环的上表面中的至少一者上形成所述凹槽，所述内聚焦环的上表面形成所述支撑区域。
  3. 根据权利要求2所述的承载装置，其特征在于，所述内聚焦环的外环面的直径和所述外聚焦环的内环面的直径相等，且所述内聚焦环的外环面位于多个所述聚焦环顶针所在圆周的内侧；并且，所述外聚焦环位于所述凹 槽底部的部分设置有多个通孔，所述通孔的数量与所述聚焦环顶针的数量相同，且各个所述聚焦环顶针一一对应地穿过各个所述通孔，以能够伸入所述凹槽。
  4. 根据权利要求1-3任意一项所述的承载装置，其特征在于，所述凹槽的外环侧面为第一阶梯面，所述上聚焦环的外环面为第二阶梯面，所述第二阶梯面与所述第一阶梯面相配合，以限定所述上聚焦环在所述凹槽中的位置。
  5. 根据权利要求4所述的承载装置，其特征在于，所述第一阶梯面包括由上而下依次连接的第一配合面、第二配合面和第三配合面，其中，所述第一配合面和所述第三配合面均垂直于所述下聚焦环的上表面，且所述第三配合面的直径小于所述第一配合面的直径；所述第二配合面的直径由上而下递减；
    所述第二阶梯面包括由上而下依次连接的第四配合面、第五配合面和第六配合面，三者分别与所述第一配合面、第二配合面和第三配合面相配合。
  6. 根据权利要求1-3任意一项所述的承载装置，其特征在于，所述第一限位部为限位槽；所述第二限位部的外表面与所述限位槽的内表面相配合。
  7. 根据权利要求6所述的承载装置，其特征在于，所述第二限位部的外表面与所述限位槽的内表面在竖直面上的正投影形状均为弧形。
  8. 根据权利要求6所述的承载装置，其特征在于，所述限位槽为环形凹槽，且所述环形凹槽和所述上聚焦环同心设置。
  9. 根据权利要求1-3任意一项所述的承载装置，其特征在于，所述上聚焦环的内环面的直径大于所述晶圆的直径。
  10. 根据权利要求2或3所述的承载装置，其特征在于，所述内聚焦环为耐刻蚀材质；和/或，
    所述上聚焦环为耐刻蚀材质。
  11. 根据权利要求1-3任意一项所述的承载装置，其特征在于，所述承载装置还包括用于驱动多个所述聚焦环顶针同步升降的驱动装置；
    所述驱动装置包括第一驱动源、第一固定支架、第一转接件、第一滑轨组件和第二滑轨组件；其中，
    所述第一驱动源的固定端固定于所述卡盘下方，所述第一驱动源的驱动端通过所述第一转接件与所述聚焦环顶针连接；
    所述第一固定支架固定于所述卡盘下方，所述第一固定支架具有第一安装面和第二安装面，所述第一安装面和所述第二安装面均平行所述聚焦环顶针的移动方向，且所述第一安装面和所述第二安装面相垂直；
    所述第一滑轨组件和所述第二滑轨组件分别设置于所述第一安装面和第二安装面上，且均与所述第一转接件滑动连接，用以限定所述聚焦环顶针的移动方向。
  12. 根据权利要求11所述的承载装置，其特征在于，所述驱动装置还包括第一传感器和第一控制单元，其中，所述第一传感器用于检测所述聚焦环顶针的位置信息，并将位置信息反馈至所述第一控制单元；所述第一控制单元用于根据所述位置信息控制所述第一驱动源的工作。
  13. 根据权利要求11所述的承载装置，其特征在于，所述承载装置还包括机壳，所述机壳与所述卡盘的下表面构成封闭空间，所述驱动装置设置 于所述封闭空间内；其中，所述第一驱动源的固定端与所述机壳或者所述第一固定支架固定连接；所述第一固定支架与所述机壳固定连接。
  14. 一种半导体反应腔室，其特征在于，包括权利要求1至13中任一项所述的承载装置。
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