JP7457209B2 - 載置装置及び半導体反応チャンバ - Google Patents
載置装置及び半導体反応チャンバ Download PDFInfo
- Publication number
- JP7457209B2 JP7457209B2 JP2023526912A JP2023526912A JP7457209B2 JP 7457209 B2 JP7457209 B2 JP 7457209B2 JP 2023526912 A JP2023526912 A JP 2023526912A JP 2023526912 A JP2023526912 A JP 2023526912A JP 7457209 B2 JP7457209 B2 JP 7457209B2
- Authority
- JP
- Japan
- Prior art keywords
- focus ring
- groove
- push
- pin
- mounting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000006243 chemical reaction Methods 0.000 title claims description 38
- 238000005530 etching Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 65
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
半導体反応チャンバにウェハを載置するための載置装置であって、
チャックと、フォーカスリングアセンブリと、複数のフォーカスリング突き上げピンと、を含み、
前記チャックは、前記半導体反応チャンバ内に設けられ、前記ウェハを載置することに用いられ、
前記フォーカスリングアセンブリは、上部フォーカスリング及び下部フォーカスリングを含み、前記下部フォーカスリングは前記チャックの周囲に設けられ、前記下部フォーカスリングの上面に凹溝が設けられ、前記上部フォーカスリングは前記凹溝内に昇降可能に設けられ、前記下部フォーカスリングの上面において且つ前記凹溝の内側に位置する領域は支持領域であり、前記支持領域は前記チャックの上面と面一であり、前記ウェハを共同で支持することに用いられ、前記上部フォーカスリングが前記凹溝内に位置する場合、前記上部フォーカスリングの上面は前記支持領域よりも高く、前記上部フォーカスリングの下面に第1ストッパ部が設けられ、前記第1ストッパ部は前記凹溝に対応して設けられ、
前記複数のフォーカスリング突き上げピンは、前記上部フォーカスリングの周方向に沿って間隔を空けて分布し、上昇時に前記上部フォーカスリングを押し上げることができるように、各前記フォーカスリング突き上げピンは前記載置装置内に昇降可能に設けられ、前記下部フォーカスリングの前記凹溝の底部に位置する部分を貫通し、前記フォーカスリング突き上げピンの上端に第2ストッパ部が設けられ、前記第2ストッパ部は前記フォーカスリング突き上げピンが前記上部フォーカスリングを押し上げる時に、前記第1ストッパ部と係合して前記上部フォーカスリングの前記フォーカスリング突き上げピンにおける水平位置を限定する。
200 載置装置
210 チャック
220 フォーカスリングアセンブリ
221 上部フォーカスリング
2211 ストッパ溝
222 下部フォーカスリング
2221 内部フォーカスリング
2222 外部フォーカスリング
2222a 貫通孔
223 凹溝
2231 第1開口溝
2232 第2開口溝
2233 第1係合面
2234 第2係合面
2235 第3係合面
230 ベースリング
300 フォーカスリング突き上げピン
301 第2ストッパ部の外面
400 駆動装置
410 第1駆動源
420 第1固定ブラケット
430 第1アダプタ
441 第1スライドレールアセンブリ
442 第2スライドレールアセンブリ
450 第2駆動源
460 第2固定ブラケット
470 第2アダプタ
480 第3スライドレールアセンブリ
491 第1センサ
492 第2センサ
500 ハウジング
600 ウェハ
700 搬送マニピュレーター
800 ウェハ突き上げピン
Claims (10)
- 半導体反応チャンバにウェハを載置するための載置装置であって、
チャックと、フォーカスリングアセンブリと、複数の複数のフォーカスリング突き上げピンと、を含み
前記チャックは、前記半導体反応チャンバ内に設けられ、前記ウェハを載置することに用いられ、
前記フォーカスリングアセンブリは、上部フォーカスリング及び下部フォーカスリングを含み、前記下部フォーカスリングは前記チャックの周囲に設けられ、前記下部フォーカスリングの上面に凹溝が設けられ、前記上部フォーカスリングは前記凹溝内に昇降可能に設けられ、前記下部フォーカスリングの上面において且つ前記凹溝の内側に位置する領域は支持領域であり、前記支持領域は前記チャックの上面と面一であり、前記ウェハを共同で支持することに用いられ、前記上部フォーカスリングが前記凹溝内に位置する場合、前記上部フォーカスリングの上面は前記支持領域よりも高く、前記上部フォーカスリングの下面に第1ストッパ部が設けられ、前記第1ストッパ部は前記凹溝に対応して設けられ、
複数のフォーカスリング突き上げピンは、前記上部フォーカスリングの周方向に沿って間隔を空けて分布し、上昇時に前記上部フォーカスリングを押し上げることができるように、各前記フォーカスリング突き上げピンは前記載置装置内に昇降可能に設けられ、前記下部フォーカスリングの前記凹溝の底部に位置する部分を貫通し、前記フォーカスリング突き上げピンの上端に第2ストッパ部が設けられ、前記第2ストッパ部は前記フォーカスリング突き上げピンが前記上部フォーカスリングを押し上げる時に、前記第1ストッパ部と係合して前記上部フォーカスリングの前記フォーカスリング突き上げピンにおける水平位置を限定し、
前記下部フォーカスリングは内部フォーカスリング及び外部フォーカスリングを含み、前記外部フォーカスリングは前記内部フォーカスリングの周囲に周設され、
前記内部フォーカスリングの上面及び前記外部フォーカスリングの上面の少なくとも一方に前記凹溝が形成され、前記内部フォーカスリングの上面が前記支持領域とされ、
前記内部フォーカスリングの外周面の直径が前記外部フォーカスリングの内周面の直径に等しく、且つ前記内部フォーカスリングの外周面は複数の前記フォーカスリング突き上げピンが所在する円周の内側に位置し、そして、前記外部フォーカスリングの前記凹溝の底部に位置する部分に複数の貫通孔が設けられ、前記貫通孔の数が前記フォーカスリング突き上げピンの数と同じであり、且つ前記凹溝に伸びることができるように、各前記フォーカスリング突き上げピンは各前記貫通孔を1対1で対応して貫通し、
前記凹溝の外周の側面は第1階段面であり、前記上部フォーカスリングの外周面は第2階段面であり、前記第2階段面は前記第1階段面と係合して、前記上部フォーカスリングの前記凹溝における位置を限定し、
前記第1階段面は上から下へ順次接続された第1係合面、第2係合面及び第3係合面を含み、前記第1係合面及び前記第3係合面はいずれも前記下部フォーカスリングの上面に垂直であり、且つ前記第3係合面の直径が前記第1係合面の直径よりも小さく、前記第2係合面の直径が上から下へ徐々に小さくなり、
前記第2階段面は上から下へ順次接続された第4係合面、第5係合面及び第6係合面を含み、三者はそれぞれ前記第1係合面、前記第2係合面及び前記第3係合面と係合することを特徴とする載置装置。 - 前記第1ストッパ部はストッパ溝であり、前記第2ストッパ部の外面は前記ストッパ溝の内面に係合することを特徴とする請求項1に記載の載置装置。
- 前記第2ストッパ部の外面と前記ストッパ溝の内面の垂直面における正投影形状はいずれも円弧状であることを特徴とする請求項2に記載の載置装置。
- 前記ストッパ溝は環状凹溝であり、且つ前記環状凹溝と前記上部フォーカスリングは同心に設けられることを特徴とする請求項2に記載の載置装置。
- 前記上部フォーカスリングの内周面の直径が前記ウェハの直径よりも大きいことを特徴とする請求項1に記載の載置装置。
- 前記内部フォーカスリングは耐エッチング材質であり、及び/又は、
前記上部フォーカスリングは耐エッチング材質であることを特徴とする請求項1に記載の載置装置。 - 複数の前記フォーカスリング突き上げピンを駆動して同期昇降させるための駆動装置をさらに含み、
前記駆動装置は第1駆動源、第1固定ブラケット、第1アダプタ、第1スライドレールアセンブリ及び第2スライドレールアセンブリを含み、
前記第1駆動源の固定側が前記チャックの下方に固定され、前記第1駆動源の駆動側が前記第1アダプタを介して前記フォーカスリング突き上げピンに接続され、
前記第1固定ブラケットは前記チャックの下方に固定され、前記第1固定ブラケットは第1取り付け面と第2取り付け面を有し、前記第1取り付け面と前記第2取り付け面はいずれも前記フォーカスリング突き上げピンの移動方向に平行であり、且つ前記第1取り付け面と前記第2取り付け面は垂直であり、
前記第1スライドレールアセンブリと前記第2スライドレールアセンブリは前記第1取り付け面と前記第2取り付け面にそれぞれ設けられ、且ついずれも前記第1アダプタに摺動接続され、前記フォーカスリング突き上げピンの移動方向を限定することに用いられることを特徴とする請求項1に記載の載置装置。 - 前記駆動装置は第1センサ及び第1制御ユニットをさらに含み、前記第1センサは前記フォーカスリング突き上げピンの位置情報を検出し、位置情報を前記第1制御ユニットにフィードバックすることに用いられ、前記第1制御ユニットは前記位置情報に基づいて前記第1駆動源の動作を制御することに用いられることを特徴とする請求項7に記載の載置装置。
- ハウジングをさらに含み、前記ハウジングと前記チャックの下面は密閉空間を構成し、前記駆動装置は前記密閉空間内に設けられ、前記第1駆動源の固定側が前記ハウジング又は前記第1固定ブラケットに固定接続され、前記第1固定ブラケットは前記ハウジングに固定接続されることを特徴とする請求項7に記載の載置装置。
- 半導体反応チャンバであって、請求項1乃至9のいずれか1項に記載の載置装置を含むことを特徴とする半導体反応チャンバ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011224676.0A CN112397366B (zh) | 2020-11-05 | 2020-11-05 | 一种承载装置及半导体反应腔室 |
CN202011224676.0 | 2020-11-05 | ||
PCT/CN2021/127291 WO2022095794A1 (zh) | 2020-11-05 | 2021-10-29 | 承载装置及半导体反应腔室 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023543943A JP2023543943A (ja) | 2023-10-18 |
JP7457209B2 true JP7457209B2 (ja) | 2024-03-27 |
Family
ID=74598836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023526912A Active JP7457209B2 (ja) | 2020-11-05 | 2021-10-29 | 載置装置及び半導体反応チャンバ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230274917A1 (ja) |
JP (1) | JP7457209B2 (ja) |
KR (1) | KR102642283B1 (ja) |
CN (1) | CN112397366B (ja) |
TW (1) | TWI805051B (ja) |
WO (1) | WO2022095794A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397366B (zh) * | 2020-11-05 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 一种承载装置及半导体反应腔室 |
US11881375B2 (en) | 2021-04-15 | 2024-01-23 | Applied Materials, Inc. | Common substrate and shadow ring lift apparatus |
CN114927461B (zh) * | 2022-07-01 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 晶圆承载装置和半导体工艺设备 |
CN115418625B (zh) * | 2022-08-02 | 2023-09-29 | 拓荆科技股份有限公司 | 晶圆托盘、气相沉积设备及薄膜制备方法 |
CN117476539B (zh) * | 2023-10-07 | 2024-05-03 | 昆山日月同芯半导体有限公司 | 一种便于调节顶针座高度的调节机构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244274A (ja) | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2012146743A (ja) | 2011-01-07 | 2012-08-02 | Tokyo Electron Ltd | 基板処理装置 |
JP2019505088A (ja) | 2016-01-26 | 2019-02-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハエッジリングの持ち上げに関する解決 |
WO2020036613A1 (en) | 2018-08-13 | 2020-02-20 | Lam Research Corporation | Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features |
JP2020053538A (ja) | 2018-09-26 | 2020-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2020522134A (ja) | 2017-05-31 | 2020-07-27 | ラム リサーチ コーポレーションLam Research Corporation | 調整可能/交換可能なエッジ結合リングのための検出システム |
JP2021027123A (ja) | 2019-08-02 | 2021-02-22 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US7311784B2 (en) * | 2002-11-26 | 2007-12-25 | Tokyo Electron Limited | Plasma processing device |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
CN108369922B (zh) * | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
CN107093569B (zh) * | 2016-02-18 | 2019-07-05 | 北京北方华创微电子装备有限公司 | 一种晶片定位装置及反应腔室 |
US11404249B2 (en) * | 2017-03-22 | 2022-08-02 | Tokyo Electron Limited | Substrate processing apparatus |
WO2019088204A1 (ja) * | 2017-11-06 | 2019-05-09 | 日本碍子株式会社 | 静電チャックアセンブリ、静電チャック及びフォーカスリング |
US11201037B2 (en) * | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
CN109192696B (zh) * | 2018-08-10 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 升降针系统、真空反应腔室以及半导体加工设备 |
CN111508805B (zh) * | 2020-04-07 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 半导体设备中的晶片升降结构及半导体设备 |
CN112397366B (zh) * | 2020-11-05 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 一种承载装置及半导体反应腔室 |
-
2020
- 2020-11-05 CN CN202011224676.0A patent/CN112397366B/zh active Active
-
2021
- 2021-10-29 TW TW110140455A patent/TWI805051B/zh active
- 2021-10-29 WO PCT/CN2021/127291 patent/WO2022095794A1/zh active Application Filing
- 2021-10-29 JP JP2023526912A patent/JP7457209B2/ja active Active
- 2021-10-29 KR KR1020237015320A patent/KR102642283B1/ko active IP Right Grant
-
2023
- 2023-05-05 US US18/313,027 patent/US20230274917A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244274A (ja) | 2007-03-28 | 2008-10-09 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2012146743A (ja) | 2011-01-07 | 2012-08-02 | Tokyo Electron Ltd | 基板処理装置 |
JP2019505088A (ja) | 2016-01-26 | 2019-02-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハエッジリングの持ち上げに関する解決 |
JP2020522134A (ja) | 2017-05-31 | 2020-07-27 | ラム リサーチ コーポレーションLam Research Corporation | 調整可能/交換可能なエッジ結合リングのための検出システム |
WO2020036613A1 (en) | 2018-08-13 | 2020-02-20 | Lam Research Corporation | Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features |
JP2020053538A (ja) | 2018-09-26 | 2020-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2021027123A (ja) | 2019-08-02 | 2021-02-22 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2023543943A (ja) | 2023-10-18 |
TW202220097A (zh) | 2022-05-16 |
KR20230082663A (ko) | 2023-06-08 |
TWI805051B (zh) | 2023-06-11 |
US20230274917A1 (en) | 2023-08-31 |
KR102642283B1 (ko) | 2024-02-29 |
CN112397366B (zh) | 2023-07-14 |
WO2022095794A1 (zh) | 2022-05-12 |
CN112397366A (zh) | 2021-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7457209B2 (ja) | 載置装置及び半導体反応チャンバ | |
KR101937283B1 (ko) | 지지 장치 및 플라즈마 공정 장치 | |
JP7457756B2 (ja) | ウエハエッジにおける方位角方向の厚さの均一性を向上させるためのポケット内ウエハのセンタリング | |
JP2011204784A (ja) | 被処理体の支持機構、支持方法およびそれを備えた搬送システム | |
TW202111853A (zh) | 一種電漿處理器、晶片頂升裝置及其頂升方法 | |
CN111508805A (zh) | 半导体设备中的晶片升降结构及半导体设备 | |
US11784075B2 (en) | Batch substrate support with warped substrate capability | |
JP4824588B2 (ja) | 基板アライメント装置 | |
KR20090116867A (ko) | 기판 리프트 어셈블리 | |
JP2017092309A (ja) | 基板のアライメント装置 | |
JP2019029467A (ja) | ウエハ搬送機構、ウエハプローバおよびウエハ搬送機構の搬送位置調整方法 | |
CN106206399B (zh) | 压环装置及反应腔室 | |
JP2008177454A (ja) | 基板処理装置および基板処理方法 | |
US11892778B2 (en) | Device for adjusting wafer, reaction chamber, and method for adjusting wafer | |
KR20210116003A (ko) | 기판 리프팅 장치 및 기판 리프팅 장치를 포함하는 기판 처리 장치 | |
CN111725111B (zh) | 半导体工艺设备的反应腔室及半导体工艺设备 | |
CN113451191B (zh) | 定位装置及蚀刻装置 | |
US20230178342A1 (en) | Mid-chamber flow optimizer | |
KR20230053957A (ko) | 기판 승강 장치 및 기판 처리 장치 | |
KR20230119598A (ko) | 기판 처리 장치 및 위치 어긋남 보정 방법 | |
KR20060078744A (ko) | 플라즈마 장비의 웨이퍼 척 | |
CN118099072A (zh) | 半导体工艺腔室、晶圆传送件、半导体工艺设备及方法 | |
CN112563184A (zh) | 承载装置和半导体工艺设备 | |
KR20050075791A (ko) | 반도체 소자 제조 장치 | |
KR20020075584A (ko) | 플레이트 어셈블리 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230502 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230921 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20230921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240314 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7457209 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |