WO2022088794A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2022088794A1
WO2022088794A1 PCT/CN2021/108751 CN2021108751W WO2022088794A1 WO 2022088794 A1 WO2022088794 A1 WO 2022088794A1 CN 2021108751 W CN2021108751 W CN 2021108751W WO 2022088794 A1 WO2022088794 A1 WO 2022088794A1
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layer
display panel
area
inorganic film
blocking
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PCT/CN2021/108751
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English (en)
French (fr)
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王杰
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合肥维信诺科技有限公司
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Priority to KR1020227040500A priority Critical patent/KR20220161490A/ko
Publication of WO2022088794A1 publication Critical patent/WO2022088794A1/zh
Priority to US17/986,304 priority patent/US20230071744A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel and a display device.
  • OLED display panels have the characteristics of self-illumination, high contrast, thin thickness, fast response speed, wide viewing angle, low power consumption, and flexible display. Therefore, they are widely used in In display devices, and with the continuous improvement and technological change of high PPI and high refresh technologies in the display field, users have higher and higher demands on the battery life of mobile terminal products.
  • LTPS devices are usually formed on the substrate first, and then IGZO devices are formed on the substrate, so that the display panel has the advantages of low leakage of IGZO and high mobility of LTPS at the same time. It can be used in the display panel, which greatly improves the battery life of the product.
  • a larger size display panel motherboard is usually produced first, and then a cutting device is used to cut the display panel motherboard into several independent display panels, and the silicon oxide covering the IGZO device is exposed.
  • a cutting device is used to cut the display panel motherboard into several independent display panels, and the silicon oxide covering the IGZO device is exposed.
  • the display panel manufactured in the above-mentioned manner external water vapor or oxygen can easily penetrate into the display area from the side of the display panel, affecting the display of the display panel.
  • embodiments of the present application provide a display panel and a display device, which are used to prevent moisture or oxygen from invading into the display panel and ensure the display of the display panel.
  • a first aspect of the embodiments of the present application provides a display panel, which is provided with a pixel area, a driving area and a non-display area, and the non-display area surrounds the pixel area in a direction parallel to the light-emitting surface of the display panel and the driving area;
  • the display panel includes a substrate, a barrier layer, an encapsulation layer stacked on the non-display area, and a blocking groove located in the non-display area, the blocking groove emits light along parallel to the display panel
  • the direction of the surface surrounds the pixel region and the driving region, and the blocking groove extends at least to the blocking layer in the thickness direction, and the encapsulation layer has an extension portion that at least covers the blocking groove and is close to the blocking groove.
  • the encapsulation layer and the blocking layer form a sealed space surrounding the driving region and the pixel region.
  • a second aspect of the embodiments of the present application provides a display device including the above-mentioned display panel.
  • the blocking groove in the non-display area and surrounding the driving area and the pixel area in a direction parallel to the light-emitting surface of the display panel, the blocking groove extends at least to the thickness of the blocking groove in the thickness direction. layer, so that part of the barrier layer is exposed in the barrier groove, and at the same time, the extension of the encapsulation layer covers at least the first side of the barrier groove close to the driving area and is connected with the barrier layer, so that the encapsulation layer and the barrier layer form a sealed space. to surround the drive area and the pixel area.
  • the water vapor or oxygen When external water vapor or oxygen invades from the side of the display panel, the water vapor or oxygen will be blocked by the barrier layer and the extension on the first side to prevent the water vapor or oxygen from being transmitted to the driving area and the pixel area, ensuring the display panel. display.
  • FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional view of a display panel provided by an embodiment of the present application.
  • FIG. 3 is another schematic cross-sectional view of the display panel method provided by the embodiment of the present application.
  • FIG. 4 is another schematic cross-sectional view of the display panel provided by the embodiment of the present application.
  • the encapsulation layer is usually the uppermost film layer of the display panel, which is used to prevent water vapor or oxygen from entering the driving area and the pixel area.
  • the encapsulation layer cannot Covered on the side of the display panel, so that the silicon oxide in the display panel is exposed to the outside, so that external water vapor or oxygen easily invades the driving area and the pixel area from the side of the display panel, affecting the display of the display panel.
  • embodiments of the present application provide a display panel and a display device.
  • the blocking groove is thicker than the display panel.
  • the direction extends at least to the blocking layer, so that part of the blocking layer is exposed in the blocking groove, and at the same time, the extension of the encapsulation layer covers at least the first side of the blocking groove close to the driving area, so that the encapsulation layer and the blocking layer form a sealed space, the sealed space Used to surround the drive area and the pixel area.
  • the water vapor or oxygen When external water vapor or oxygen invades from the side of the display panel, the water vapor or oxygen will be blocked by the barrier layer and the extension located on the first side to prevent the water vapor or oxygen from being transmitted to the driving area and the pixel area, ensuring the display panel. show.
  • the display panel provided by the embodiment of the present application includes a pixel area 300 , a driving area 200 and a non-display area 100 .
  • the non-display area 100 surrounds the pixel area 300 and the driving area 200 in a direction parallel to the light-emitting surface of the display panel. , wherein the pixel area 300 is disposed on the side of the driving area 200 away from the non-display area 100 .
  • the enclosing in this embodiment can be understood as semi-enclosing, that is, the non-display area 100 can be relatively disposed in the driving area 200
  • the two sides, or the surrounding can be understood as full surrounding, that is, the non-display area 100 is arranged around the driving area 200 .
  • the non-display area 100 includes a stacked substrate 10 , a barrier layer 20 and an encapsulation layer 30 .
  • the substrate 10 serves as a support member of the display panel for supporting devices disposed thereon.
  • the substrate 10 may be a flexible substrate, such as a flexible substrate including polyimide (Polyimide, PI for short).
  • the substrate is not limited to the above-mentioned materials.
  • the substrate 10 may also include a first flexible substrate 11 , a silicon oxide layer 12 and a second flexible substrate 13 that are stacked in sequence. While the substrate 10 is flexible, the support force of the substrate 10 can also be enhanced by using the silicon oxide layer 12 .
  • the barrier layer 20 is disposed on the substrate 10 and can be made of silicon nitride. Silicon nitride has both insulating properties and a strong ability to block water vapor or oxygen. Therefore, in this embodiment, the barrier layer 20 is used to block the outside world. The water vapor or oxygen in the environment prevents the water vapor or oxygen from diffusing into the pixel area 300 and the driving area 200 to ensure the display of the display panel.
  • the blocking layer 20 can be disposed in the same layer as the silicon nitride in the lowermost layer of the TFT array substrate in the pixel area, so that when water vapor or oxygen intrudes from the side of the display panel, when the water vapor enters the direction perpendicular to the substrate 10 .
  • the barrier layer 20 will block water vapor or oxygen between the substrate 10 and the barrier layer 20 to prevent the water vapor or oxygen from diffusing into the driving region 200 and the pixel region 300 located on the barrier layer 20 , ensuring display panel display.
  • the display panel In order to prevent water vapor or oxygen from intruding into the driving area 200 and the pixel area 300 from the top of the display panel, the display panel usually further includes an encapsulation layer 30 , and the encapsulation layer 30 covers the driving area 200 and the pixel area 300 for realizing the driving area 200 And the pixel area 300 is isolated from the external environment to prevent water vapor or oxygen from entering the driving area 200 and the pixel area 300 and affecting the display of the display panel.
  • the encapsulation layer 30 can be an inorganic thin film or an organic thin film, wherein the inorganic thin film can be a ceramic film, such as a silicon nitride film.
  • the organic film may be a polymer film, and may be formed by stacking two or more polymer films.
  • the non-display area 100 is provided with a blocking groove 40 surrounding the driving area 200 and the pixel area 300 in a direction parallel to the light-emitting surface of the display panel.
  • the blocking groove 40 extends at least to the blocking layer 20 in the thickness direction, so that Part of the barrier layer 20 is exposed in the barrier groove 40, and the encapsulation layer 30 has an extension portion 31, the extension portion 31 at least covers the first side 41 of the barrier groove 40 close to the driving area, and the extension portion 31 is connected with the barrier layer 20, so that the encapsulation
  • the layer 30 and the blocking layer 20 form a sealed space for surrounding the driving region 200 and the pixel region 300 .
  • the cross section of the blocking groove 40 can be circular or square. Taking the orientation shown in FIG. 2 as an example, the blocking groove 40 is away from the left side of the substrate. The area surrounded by the edge of the surface is used for arranging the pixel area 300 and the driving area 200, and the thickness direction is the direction from the substrate to the encapsulation layer, that is, the Y direction in FIG. 3 .
  • Part of the water vapor or oxygen above the barrier layer 20 will touch the extension 31 on the first side surface 41 when it diffuses in the horizontal direction, and the extension 31 can block the water vapor between the edge of the display panel and the barrier groove 40 . During this time, the transfer of water vapor or oxygen into the pixel area 300 and the driving area 200 is prevented, so as to ensure the display of the display panel.
  • the material of the barrier layer 20 and the material of the encapsulation layer 30 may be the same or different.
  • the The layer 30 can be silicon nitride at the same time, or both are silicon oxynitride; when the material of the barrier layer 20 and the encapsulation layer 30 are different, the material of the barrier layer 20 can be silicon nitride, and the material of the encapsulation layer 30 can be Silicon oxynitride, the barrier layer 20 and the encapsulation layer 30 are connected by nitrogen bonds.
  • the extension portion 31 also covers the second side surface 42 of the blocking groove 40 facing away from the driving area 200 and the groove bottom 43 of the blocking groove 40 .
  • the shape of the longitudinal section of the extension part 31 is U-shaped, and part of the water vapor or oxygen above the barrier layer 20 will preferentially touch the second side when spreading in the horizontal direction.
  • the extension 31 on the 42, the extension 31 can block water vapor or oxygen between the edge of the display panel and the second side 42, if there is still a small part of water vapor or oxygen diffused to the first side 41, the small part of the Water vapor or oxygen will be blocked by the extension 31 on the first side 41, so that the extension 31 is improved by the double blocking effect of the extension 31 on the first side 41 and the extension 31 on the second side 42.
  • the groove bottom 43 of the blocking groove 40 is also covered with the extension portion 31 , which is equivalent to increasing the thickness of the blocking layer 20 , thereby improving the ability of the blocking layer 20 to block water vapor or oxygen, thereby ensuring the display of the display panel.
  • the coverage area of the extension part 31 is not limited to the above description, it may only cover the second side surface 42 of the blocking groove 40 away from the driving area, or the extension part 31 may cover the second side surface 42 of the blocking groove 40 On one side 41 and the second side 42 .
  • the longitudinal section of the blocking groove 40 is a trapezoid, and the size of the notch of the blocking groove 40 is larger than the size of the groove bottom of the blocking groove 40, that is, the blocking groove 40 is a trapezoidal structure with a large upper and a small lower.
  • the longitudinal cross-sectional shape of the blocking groove 40 is an inverted trapezoid, which facilitates the manufacture of the blocking groove 40 and simplifies the manufacturing process of the blocking groove 40 .
  • the number of the blocking grooves 40 may be multiple, and the multiple blocking grooves 40 may be arranged at intervals in the non-display area, that is, the multiple blocking grooves 40 may be arranged at intervals along the length direction of the display panel.
  • the setting of the blocking grooves 40 can block the external water vapor or oxygen to prevent the external water vapor or oxygen from diffusing into the pixel area 300 and the driving area 200 , thereby ensuring the normal display of the display panel.
  • the length direction of the display panel may be the X direction in FIG. 3 .
  • the distance between two adjacent blocking grooves 40 may be the same or different.
  • the barrier grooves 40 in the non-display area 100 can be simultaneously formed, so that it is not necessary to separately form the barrier grooves 40 using a manufacturing process, which simplifies the manufacture of the display panel Process and production costs.
  • the non-display area 100 further includes a first inorganic film layer 50 and a second inorganic film layer 60 , wherein the first inorganic film layer 50 is disposed on the side of the substrate 10 close to the barrier layer 20 , and the barrier layer 20 is disposed On the side of the first inorganic film layer 50 facing away from the substrate 10 , the second inorganic film layer 60 is disposed on the side of the barrier layer 20 facing away from the first inorganic film layer 50 .
  • the first inorganic film layer 50 , the barrier layer 20 and the second inorganic film layer 60 are stacked on the substrate 10 .
  • the barrier groove 40 penetrates the second inorganic film layer 60 in the thickness direction and extends to the barrier layer 20 , that is, the bottom 43 of the barrier groove 40 is located on the upper surface of the barrier layer 20 to increase the extension
  • the contact area between the portion 31 and the blocking layer 20 reduces the probability of water vapor or oxygen intruding from the side diffusing to the pixel region 300 and the driving region 200, thereby ensuring the display of the display panel.
  • the barrier groove 40 penetrates the second inorganic film layer 60 and the barrier layer 20 in the thickness direction, and extends into the first inorganic film layer 50 or on the substrate 10 .
  • the groove bottom 43 of the blocking groove 40 may be located in the first inorganic film layer 50 or may be located on the substrate 10 .
  • the depth of the blocking groove 40 can be increased to increase the length of the extension 31 covering the first side surface 41 and the second side surface 42, thereby reducing the diffusion of water vapor or oxygen intruding from the side surface to the pixel The probability of the area 300 and the driving area 200 is ensured, thereby ensuring the display of the display panel.
  • both the first inorganic film layer 50 and the second inorganic film layer 60 may be in a stacked structure, wherein the first inorganic film layer 50 may include a plurality of first sub-inorganic film layers, adjacent first sub-inorganic film layers.
  • the material of the inorganic film layer is different.
  • the first inorganic film layer 50 provided in this embodiment includes two first sub-inorganic film layers, and the material of the first sub-inorganic film layer close to the substrate 10 may be silicon oxide.
  • the material of the first sub-inorganic film layer facing away from the substrate 10 may be a combination of silicon oxide, silicon nitride and single crystal silicon, so that the first inorganic film layer 50 also includes silicon nitride.
  • the first inorganic film The layer 50 also has the function of blocking water vapor or oxygen, which provides a guarantee for the normal display of the display panel.
  • the barrier groove 40 extends to the first inorganic film layer 50 in the thickness direction, it can be understood that the groove bottom 43 of the barrier groove 40 is located in any one of the first sub-inorganic film layers.
  • the second inorganic film layer 60 includes a plurality of second sub-inorganic film layers arranged in layers, and the materials of the adjacent second sub-inorganic film layers are different.
  • the second inorganic film layer 60 provided in this embodiment includes two second sub-inorganic film layers, and the material of the second sub-inorganic film layer close to the substrate 10 may be silicon oxide.
  • the material of the second sub-inorganic film layer facing away from the substrate 10 may be silicon nitride, so on the one hand, the second inorganic film layer 60 also includes silicon nitride, and correspondingly, the first inorganic film layer 50 also has the ability to block water vapor or The function of oxygen provides a guarantee for the normal display of the display panel.
  • the second inorganic film layer 60 and the encapsulation layer 30 are both silicon nitride, which can improve the bonding force between the second inorganic film layer 60 and the encapsulation layer 30, thereby improving the ability of the encapsulation layer 30 to block water vapor or oxygen.
  • a third inorganic film layer 70 is disposed between the first inorganic film layer 50 and the blocking layer 20 , wherein the material of the third inorganic film layer 70 is silicon nitride.
  • the second inorganic film layer 60 , the barrier layer 20 and the first inorganic film layer 50 are all formed together with the array substrate in the display panel.
  • the array substrate includes switching thin film transistors and driving thin film transistors.
  • the thin film transistor is insulated from the driving thin film transistor, and an insulating layer needs to be provided between the switching thin film transistor and the driving thin film transistor.
  • the insulating layer extends to the non-display area to form the third inorganic film layer 70 .
  • the display panel further includes an encapsulation dam 80, the encapsulation dam 80 is disposed between the blocking groove 40 and the driving area 200, and surrounds the driving area 200 and the pixel area 300 in the direction of the light emitting surface of the display panel, so that the driving area 200 and the pixel area 300 are located in the area surrounded by the encapsulation dam 80 , so that when the material of the encapsulation layer 30 is evaporated, the encapsulation layer 30 can cover the encapsulation dam 80 .
  • the encapsulation dam 80 by setting the encapsulation dam 80 , it is possible to prevent excess material of the encapsulation layer 30 from being evaporated into the area outside the encapsulation dam 80 , thereby ensuring the thickness of the encapsulation layer 30 in the pixel area 300 and the driving area 200 , thereby ensuring the thickness of the encapsulation layer 30 in the pixel area 300 and the driving area 200 .
  • the probability of failure of the light emitting device in the pixel region 300 caused by external water vapor or oxygen is further reduced, and the service life of the display panel is prolonged.
  • the number of the encapsulation dams 80 can be multiple, and the multiple encapsulation dams 80 can be arranged around the driving area 200 at intervals, so as to ensure the thickness of the encapsulation layer 30 in the driving area 200 and the pixel area 300, thereby ensuring the display of the display panel.
  • the driving area 200 can be used to set peripheral circuits, and the peripheral circuits are used to provide control signals to the light emitting devices and the thin film transistors in the pixel area 300 .
  • a substrate with a larger size is usually fabricated first, and a plurality of pixel regions 300 and a plurality of driving regions 200 are formed on the substrate.
  • One pixel region 300 and one driving region 200 form an independent
  • a plurality of display panels are arranged at intervals, wherein the display panel includes an array substrate, an OLED layer arranged on the display substrate, and an encapsulation bank 80 arranged on the OLED layer.
  • a mask plate needs to be set on the substrate, wherein the openings of the mask plate are used to expose the pixel area and the driving area, and then a process such as deposition or sputtering is used to form a mask covering the pixel area and the driving area.
  • a process such as deposition or sputtering is used to form a mask covering the pixel area and the driving area.
  • the material of the encapsulation layer will also overflow to the gap between the mask and the encapsulation bank 80 .
  • the outside of the bank 80 is encapsulated and deposited into the barrier trench 40 to form the extension 31 .
  • the extended portion 31 is formed by using overflowed silicon nitride or silicon oxynitride, thereby achieving the advantages of simplifying the fabrication process of the extending portion 31 and saving production costs.
  • the encapsulation bank 80 includes an insulating layer 81 and a support pad 82 disposed in a stack, and the encapsulation layer 30 covers the top surface of the support pad 82 and the side surfaces of the insulating layer 81 and the support pad 82 .
  • the insulating layer 81 can be a single film layer, or can be formed by stacking multiple film layers.
  • the insulating layer 81 includes two sub-insulating layers, one of which can be made of silicon oxide, and the other is made of silicon oxide.
  • the material of the sub-insulating layer can be silicon nitride.
  • the insulating layer 81 is also provided with a support pad 82 , through which the wear between the insulating layer 81 and the mask plate can be reduced, and the service life of the mask plate can be improved.
  • a second aspect of the embodiments of the present application provides a display device, including the display panel in the above embodiments.
  • the display device can be applied to a smart phone, a tablet computer, a notebook computer, a mobile terminal with a display panel, or other terminal equipment.

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请提供一种显示面板及显示装置。该显示面板包括像素区、驱动区以及沿平行于显示面板出光面的方向包围像素区和驱动区的非显示区；非显示区包括层叠设置的衬底、阻隔层和封装层，本申请在非显示区内设置围绕驱动区和像素区的阻挡槽，阻挡槽在厚度方向上至少延伸至阻隔层，使得部分阻隔层暴露在阻挡槽内，同时封装层的延伸部至少覆盖阻挡槽靠近驱动区的第一侧面，并与阻隔层连接，便于封装层与阻隔层形成密封空间，该密封空间用于包围像素区和驱动区，当外界的水汽或氧气从显示面板的侧面入侵时，水汽或氧气会受到阻隔层以及位于第一侧面上的延伸部的阻挡，防止水汽或氧气传递至驱动区和像素区内，保证了显示面板的显示。

Description

显示面板及显示装置
本申请要求于2020年10月30日提交中国专利局、申请号为202011189761.8、申请名称为“显示面板及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板及显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，简称为OLED)显示面板具有自发光、对比度高、厚度薄、响应速度快、宽视角、低功耗、可实现柔性显示等特性，因此，被广泛应用于显示装置中，并且随着显示领域高PPI、高刷新技术的不断提升与技术更迭，用户对于移动终端产品的续航能力提出越来越高的需求。
在LTPO面板技术中，通常是先在衬底形成LTPS器件，然后再在衬底上形成IGZO器件，以使得显示面板同时具备IGZO低漏电和LTPS高迁移率的优势，使低频显示在中小尺寸的显示面板中得以应用，极大的提高了产品的续航能力。
但是在显示面板的制作过程中，通常是先制作尺寸较大的显示面板母板，然后利用切割装置，将显示面板母板切割成若干个独立的显示面板，覆盖在IGZO器件上的氧化硅裸露在显示面板的侧面，因此采用上述的方式制作的显示面板，外界的水汽或氧气极易从显示面板的侧面侵入显示区内，影响显示面板的显示。
发明内容
鉴于上述问题，本申请实施例提供一种显示面板及显示装置，用于阻止外界的水汽或氧气侵入显示面板内，保证了显示面板的显示。
为了实现上述目的，本申请实施例的第一方面提供一种显示面板，设 有像素区、驱动区以及非显示区，所述非显示区沿平行于显示面板出光面的方向包围所述像素区和所述驱动区；所述显示面板包括层叠设置于所述非显示区的衬底、阻隔层、封装层，以及位于所述非显示区的阻挡槽，所述阻挡槽沿平行于显示面板出光面的方向围绕所述像素区和驱动区，且所述阻挡槽在厚度方向上至少延伸至所述阻隔层，所述封装层具有延伸部，所述延伸部至少覆盖所述阻挡槽靠近所述驱动区的第一侧面，所述封装层与所述阻隔层形成包围所述驱动区和所述像素区的密封空间。
本申请实施例的第二方面提供一种显示装置，其包括如上所述的显示面板。
本申请实施例所提供的显示面板及显示装置中，通过在非显示区内设置沿平行于显示面板出光面的方向围绕驱动区和像素区的阻挡槽，阻挡槽在厚度方向上至少延伸至阻隔层，使得部分阻隔层暴露在阻挡槽内，同时封装层的延伸部至少覆盖阻挡槽靠近驱动区的第一侧面，并与阻隔层连接，使得封装层与阻隔层形成密封空间，该密封空间用于包围驱动区和像素区。当外界的水汽或氧气从显示面板的侧面入侵时，水汽或氧气会受到阻隔层以及位于第一侧面上的延伸部的阻挡，防止水汽或氧气传递至驱动区及像素区内，保证了显示面板的显示。
附图说明
图1为本申请实施例提供的显示面板的结构示意图。
图2为本申请实施例提供的显示面板的一种截面示意图。
图3为本申请实施例提供的显示面板法的另一截面示意图。
图4为本申请实施例提供的显示面板的又一截面示意图。
具体实施方式
封装层通常为显示面板最上层的膜层，用于防止水汽或氧气进入驱动区和像素区内，当利用切割装置切割显示面板母板，形成若干个独立的显示面板时，会致使封装层无法覆盖在显示面板的侧面，使得显示面板中氧化硅裸露在外部，这样外界的水汽或氧气容易从显示面板的侧面侵入驱动区和像素区内，影响显示面板的显示。
针对上述的技术问题，本申请实施例提供了一种显示面板及显示装置，通过在非显示区内设置沿平行于显示面板出光面的方向围绕驱动区和像素区的阻挡槽，阻挡槽在厚度方向上至少延伸至阻隔层，使得部分阻隔层暴露在阻挡槽内，同时，封装层的延伸部至少覆盖阻挡槽靠近驱动区的第一侧面，使得封装层与阻隔层形成密封空间，该密封空间用于包围驱动区和像素区。当外界的水汽或氧气从显示面板的侧面入侵时，水汽或氧气会受到阻隔层以及位于第一侧面上延伸部的阻挡，防止水汽或氧气传递至驱动区和像素区内，保证了显示面板的显示。
为了使本申请实施例的上述目的、特征和优点能够更加明显易懂，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。
如图1所示，本申请实施例提供的显示面板，包括像素区300、驱动区200以及非显示区100，非显示区100沿平行于显示面板出光面的方向包围像素区300和驱动区200，其中，像素区300设置在驱动区200远离非显示区100的一侧上，此外，本实施例中的包围可以为理解半包围，也就是说，非显示区100可以相对设置在驱动区200的两侧，或者是，包围可以为理解全包围，即非显示区100环绕驱动区200设置。
如图2所示，非显示区100包括层叠设置的衬底10、阻隔层20以及封装层30。衬底10作为显示面板的支撑部件，用于支撑设置在其上的器件。其中，衬底10可以为柔性衬底，如包括聚酰亚胺(Polyimide，简称PI)的柔性衬底。但是，衬底并不仅限于上述的材质，例如，如图2所示，衬底10还可以包括依次层叠设置的第一柔性衬底11、氧化硅层12以及第二柔性衬底13，在保证衬底10具有柔性的同时，也可以利用氧化硅层12增强衬底10的支撑力。
阻隔层20设置在衬底10上，其材质可以为氮化硅，氮化硅同时具备绝缘性和较强的阻隔水汽或氧气的能力，因此，本实施例中，利用阻隔层20来阻隔外界环境中水汽或氧气，防止水汽或氧气扩散至像素区300和驱动区200内，保证显示面板的显示。
可以理解的，阻隔层20可以与位于像素区内TFT阵列基板的最下层的氮化硅同层设置，这样当水汽或氧气从显示面板的侧面侵入时，当水汽沿垂直于衬底10的方向扩散至阻隔层20时，阻隔层20会将水汽或氧气阻 隔在衬底10与阻隔层20之间，防止水汽或氧气扩散至位于阻隔层20之上的驱动区200和像素区300中，保证了显示面板的显示。
为了防止水汽或氧气从显示面板的顶部侵入驱动区200和像素区300中，显示面板中通常还包括封装层30，封装层30覆盖在驱动区200和像素区300上，用于实现驱动区200和像素区300与外界环境隔离，防止水汽或氧气进入驱动区200和像素区300中，影响显示面板的显示。
封装层30可以为无机薄膜、有机薄膜，其中，无机薄膜可以为陶瓷膜，例如氮化硅膜。此外，有机薄膜可以为聚合物薄膜，而且可以是两种或两种以上的聚合物薄膜叠加形成。
在本实施例中，非显示区100内设有沿平行于显示面板出光面的方向围绕驱动区200和像素区300的阻挡槽40，阻挡槽40在厚度方向上至少延伸至阻隔层20，使得部分阻隔层20暴露在阻挡槽40内，同时封装层30具有延伸部31，该延伸部31至少覆盖阻挡槽40靠近驱动区的第一侧面41上，延伸部31与阻隔层20连接，使得封装层30与阻隔层20形成密封空间，该密封空间用于包围驱动区200和像素区300。
需要说明的是，以平行于衬底的平面为横截面，阻挡槽40的横截面可以为圆环形或者是方形，以图2所示的方位为例，阻挡槽40背离衬底的左侧面的边缘围成的区域，用于设置像素区300和驱动区200，厚度方向为从衬底到封装层的方向，即图3中Y方向。
当外界的水汽或氧气从显示面板的侧面入侵时，位于阻隔层20下方的部分水汽，会被阻隔层20阻隔在衬底10与阻隔层20之间，防止水汽扩散至位于阻隔层20之上的像素区300和驱动区200中，保证了显示面板的显示。
位于阻隔层20上方的部分水汽或氧气，在沿水平方向扩散时，会碰触位于第一侧面41上的延伸部31，该延伸部31能够将水汽阻隔在显示面板的边缘与阻挡槽40之间，防止水汽或氧气传递至像素区300和驱动区200内，保证了显示面板的显示。
进一步地，为了提高阻隔层20的阻隔水汽或氧气的能力，阻隔层20的材质和封装层30的材质可以相同或者不同，当阻隔层20和封装层30的材质相同时，阻隔层20和封装层30可以为同时为氮化硅，或者上述两者同时为氮氧化硅；当阻隔层20与封装层30的材质不同时，阻隔层20 的材质可以氮化硅，封装层30的材质可以是氮氧化硅，阻隔层20与封装层30之间通过氮键连接。
在一些实施例中，如图3所示，延伸部31还覆盖在阻挡槽40背离驱动区200的第二侧面42上以及阻挡槽40的槽底43上。
以垂直于衬底10的平面为纵截面，使得延伸部31纵截面的形状为U型，位于阻隔层20上方的部分水汽或氧气，在沿水平方向扩散时，会优先碰触位于第二侧面42上的延伸部31，该延伸部31能够将水汽或氧气阻隔在显示面板的边缘与第二侧面42之间，若仍有少部分的水汽或氧气扩散至第一侧面41，该少部分的水汽或氧气会受到位于第一侧面41上的延伸部31的阻挡，这样通过位于第一侧面41上延伸部31和位于第二侧面42上的延伸部31的双重阻挡作用，提高了延伸部31阻隔水汽或氧气的能力，进而保证了显示面板的显示。
同时，阻挡槽40的槽底43也覆盖有延伸部31，相当于增加了阻隔层20的厚度，从而提高阻隔层20的阻隔水汽或氧气的能力，进而保证了显示面板的显示。
需要说明的是，延伸部31的覆盖区域并不仅限于上述的描述方式，其可以只覆盖在阻挡槽40背离驱动区的第二侧面42上，或者是，延伸部31覆盖在阻挡槽40的第一侧面41和第二侧面42上。
在一些实施例中，以垂直于衬底10的平面为纵截面，阻挡槽40的纵截面形状为梯形，阻挡槽40的槽口的尺寸大于阻挡槽40的槽底的尺寸，即，阻挡槽40为上大下小的梯形结构，或者说，阻挡槽40的纵截面形状为倒梯形，这样便于阻挡槽40的制作，简化了阻挡槽40的制作工艺。
阻挡槽40的个数可以为多个，多个阻挡槽40间隔设置在非显示区内，也就是说，多个阻挡槽40可以沿着显示面板的长度方向间隔设置，本实施例通过多个阻挡槽40的设置，可以对外界的水汽或氧气进行多重阻挡，避免外界的水汽或氧气扩散至像素区300和驱动区200内，保证了显示面板的正常显示。
需要说明的是，显示面板的长度方向可以为图3中X方向。另外，相相邻的两个阻挡槽40之间的距离可以相同，也可以不同。
在本实施例中，在像素区300和驱动区200内形成阵列基板时，可以同步形成位于非显示区100内阻挡槽40，这样不必利用制备工艺单独形成 阻挡槽40，简化了显示面板的制作工艺及制作成本。
继续参考图3，非显示区100还包括第一无机膜层50和第二无机膜层60，其中，第一无机膜层50设置在衬底10靠近阻隔层20的一侧，阻隔层20设置在第一无机膜层50背离衬底10的一侧上，第二无机膜层60设置在阻隔层20背离第一无机膜层50的一侧上。
也就是说，第一无机膜层50、阻隔层20和第二无机膜层60层叠设置在衬底10上。
如图3所示，阻挡槽40在厚度方向上贯穿第二无机膜层60，并延伸至阻隔层20，也就是说，阻挡槽40的槽底43位于阻隔层20的上表面，以增加延伸部31与阻隔层20的接触面积，降低从侧面侵入的水汽或氧气扩散至像素区300和驱动区200的几率，进而保证了显示面板的显示。
如图4所示，阻挡槽40在厚度方向上贯穿第二无机膜层60和阻隔层20，并延伸至第一无机膜层50内或者衬底10上。
也就是说，阻挡槽40的槽底43可以位于第一无机膜层50内，也可以位于衬底10上。
本实施例通过上述的设置，可以增大阻挡槽40的深度，以增加覆盖在第一侧面41和第二侧面42上的延伸部31的长度，从而降低从侧面侵入的水汽或氧气扩散至像素区300和驱动区200的几率，进而保证了显示面板的显示。
在一些实施例中，第一无机膜层50和第二无机膜层60均可以为堆叠结构，其中，第一无机膜层50可以包括多个第一子无机膜层，相邻的第一子无机膜层的材质不同。例如，如图3和图4所示，本实施例提供的第一无机膜层50包括两个第一子无机膜层，靠近衬底10的第一子无机膜层的材质可以为氧化硅，背离衬底10的第一子无机膜层的材质可以为氧化硅、氮化硅以及单晶硅的组合物，使得第一无机膜层50中也包含氮化硅，相应地，第一无机膜层50也具备阻隔水汽或氧气的功能，为显示面板的正常显示提供了保障。
当阻挡槽40在厚度方向延伸至第一无机膜层50时，可以理解为，阻挡槽40的槽底43位于其中任意一个第一子无机膜层内。
此外，第二无机膜层60包括层叠设置的多个第二子无机膜层，相邻的第二子无机膜层的材质不同。
例如，如图3和图4所示，本实施例提供的第二无机膜层60包括两个第二子无机膜层，靠近衬底10的第二子无机膜层的材质可以为氧化硅，背离衬底10的第二子无机膜层的材质可以为氮化硅，这样一方面使得第二无机膜层60中也包含氮化硅，相应地，第一无机膜层50也具备阻隔水汽或氧气的功能，为显示面板的正常显示提供了保障。另一方面，第二无机膜层60和封装层30同时为氮化硅，可以提高第二无机膜层60和封装层30之间的结合力，进而提高封装层30阻隔水汽或氧气的能力。
在一些实施例中，第一无机膜层50与阻隔层20之间设置第三无机膜层70，其中，第三无机膜层70的材质为氮化硅。
在本实施例中，第二无机膜层60、阻隔层20以及第一无机膜层50均是随着显示面板内阵列基板一起形成的，阵列基板包括开关薄膜晶体管和驱动薄膜晶体管，为了实现开关薄膜晶体管与驱动薄膜晶体管之间绝缘设置，需要在开关薄膜晶体管和驱动薄膜晶体管之间设置绝缘层，该绝缘层向非显示区延伸以形成了第三无机膜层70。
在一些实施例中，显示面板还包括封装堤坝80，封装堤坝80设置在阻挡槽40与驱动区200之间，并沿显示面板出光面的方向环绕驱动区200和像素区300，以使得驱动区200和像素区300位于封装堤坝80所围成的区域内，这样在蒸镀封装层30的材料时，封装层30可以覆盖在封装堤坝80上。
本实施例通过封装堤坝80的设置，可以防止过多的封装层30的材料蒸镀到封装堤坝80外的区域内，保证了位于像素区300和驱动区200内的封装层30的厚度，从而进一步地降低了外界水汽或氧气造成像素区300内的发光器件失效的概率，延长了显示面板的使用寿命。
封装堤坝80的个数可以为多个，多个封装堤坝80可以环绕驱动区200间隔设置，这样可以保证位于驱动区200和像素区300内的封装层30的厚度，进而保证显示面板的显示。
需要理解的是，驱动区200可以用于设置外围电路，外围电路用于给像素区300内发光器件和薄膜晶体管提供控制信号。
在制作显示面板母板的过程中，通常是先制作尺寸较大的衬底，在衬底上形成多个像素区300和多个驱动区200，一个像素区300和一个驱动区200形成一个独立的显示面板，多个显示面板间隔设置的，其中，显示面板包括阵列基板、设置在陈列基板上的OLED层以及设置在OLED层上 的封装堤坝80。
当需要制备封装层30时，需要在衬底上设置掩膜板，其中，掩膜板的开口用于暴露像素区和驱动区，然后利用沉积或者溅射等工艺形成覆盖像素区和驱动区的封装层30。
由于掩膜板与封装堤坝80之间具有间隙，在像素区300和驱动区200上形成封装层30的同时，封装层的材料也会沿着掩膜板与封装堤坝80之间的间隙溢出到封装堤坝80的外侧，并沉积到阻挡槽40内，以形成延伸部31。
在本实施例中，通过在形成封装层30时，利用外溢的氮化硅或者氮氧化硅来形成延伸部31，达到简化延伸部31的制作工艺和节约生产成本的优势。
在一些实施例中，封装堤坝80包括层叠设置绝缘层81和支撑垫82，封装层30覆盖支撑垫82的顶面以及绝缘层81和支撑垫82的侧面上。
绝缘层81可以为单一膜层，也可以为多个膜层堆叠形成，例如，如图3所示，绝缘层81包括两个子绝缘层，其中一个子绝缘层的材质可以为氧化硅，另一个子绝缘层的材质可以为氮化硅。
绝缘层81上还设置有支撑垫82，通过支撑垫82可以降低绝缘层81与掩膜板之间磨损，提高掩膜板的使用寿命。
本申请实施例的第二方面提供了一种显示装置，包括上述实施例中的显示面板。其中，显示装置可以应用于智能手机、平板电脑、笔记本电脑以及具有显示面板的移动终端或者其他终端设备。

Claims (16)

  1. 一种显示面板，设有像素区、驱动区以及非显示区，所述非显示区沿平行于显示面板出光面的方向包围所述像素区和所述驱动区；
    所述显示面板包括层叠设置于所述非显示区的衬底、阻隔层、封装层，以及位于所述非显示区的阻挡槽，所述阻挡槽沿平行于显示面板出光面的方向围绕所述像素区和驱动区，且所述阻挡槽在厚度方向上至少延伸至所述阻隔层；
    所述封装层具有延伸部，所述延伸部至少覆盖所述阻挡槽靠近所述驱动区的第一侧面，所述封装层与所述阻隔层形成包围所述像素区和所述驱动区的密封空间。
  2. 根据权利要求1所述的显示面板，其中，所述延伸部还覆盖在所述阻挡槽背离所述驱动区的第二侧面以及所述阻挡槽的槽底上。
  3. 根据权利要求2所述的显示面板，其中，还包括位于所述非显示区的第一无机膜层和第二无机膜层，所述第一无机膜层设置在所述衬底靠近所述阻隔层的一侧；
    所述阻隔层设置在所述第一无机膜层背离所述衬底的一侧；
    所述第二无机膜层设置在所述阻隔层背离所述第一无机膜层的一侧。
  4. 根据权利要求3所述的显示面板，其中，所述阻挡槽在厚度方向上贯穿所述第二无机膜层，并延伸至所述阻隔层；
    或者，所述阻挡槽在厚度方向上贯穿所述第二无机膜层和所述阻隔层，并延伸至所述第一无机膜层内或所述衬底。
  5. 根据权利要求4所述的显示面板，其中，所述第一无机膜层包括层叠设置的多个第一子无机膜层，相邻的所述第一子无机膜层的材质不同；所述阻挡槽在厚度方向上延伸至任意一个所述第一子无机膜层内。
  6. 根据权利要求4所述的显示面板，其中，所述第二无机膜层包括层叠设置的多个第二子无机膜层，相邻的所述第二子无机膜层的材质不同。
  7. 根据权利要求3所述的显示面板，其中，所述第一无机膜层与所述阻隔层之间还设置有第三无机膜层。
  8. 根据权利要求7所述的显示面板，其中，所述像素区和所述驱动区内设置有阵列基板，所述阵列基板包括开关晶体管和驱动晶体管，所述开 关晶体管与所述驱动晶体管之间设置有绝缘层，所述绝缘层向所述非显示区延伸形成所述第三无机膜层。
  9. 根据权利要求7或8所述的显示面板，其中，所述阻挡层与所阵列基板同步形成。
  10. 根据权利要求1-8任一项所述的显示面板，其中，所述封装层的材质与所述阻隔层的材质不同。
  11. 根据权利要求10所述的显示面板，其中，所述封装层的材质为氮氧化硅，所述阻隔层的材质为氮化硅，所述封装层和所述阻隔层之间通过氮键连接。
  12. 根据权利要求1-8任一项所述的显示面板，其中，以垂直于所述衬底的平面为纵截面，所述阻挡槽的纵截面形状为梯形；
    所述阻挡槽的槽口的尺寸大于所述阻挡槽的槽底的尺寸。
  13. 根据权利要求12所述的显示面板，其中，所述阻挡槽的个数为多个，多个所述阻挡槽在显示面板的长度方向上间隔设置在所述非显示区内。
  14. 根据权利要求1-8任一项所述的显示面板，其中，所述显示面板还包括封装堤坝，所述封装堤坝设置在所述阻挡槽与所述驱动区之间，并沿显示面板出光面的方向环绕所述驱动区，所述封装层覆盖在所述封装堤坝上。
  15. 根据权利要求14所述的显示面板，其中，所述封装堤坝包括层叠设置绝缘层和支撑垫，所述封装层覆盖所述支撑垫的顶面以及所述绝缘层的侧面和所述支撑垫的侧面。
  16. 一种显示装置，包括如权利要求1-15任一项所述的显示面板。
PCT/CN2021/108751 2020-10-30 2021-07-27 显示面板及显示装置 WO2022088794A1 (zh)

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