WO2022065422A1 - 基板処理装置、基板処理方法、半導体装置の製造方法及び記録媒体 - Google Patents

基板処理装置、基板処理方法、半導体装置の製造方法及び記録媒体 Download PDF

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Publication number
WO2022065422A1
WO2022065422A1 PCT/JP2021/035033 JP2021035033W WO2022065422A1 WO 2022065422 A1 WO2022065422 A1 WO 2022065422A1 JP 2021035033 W JP2021035033 W JP 2021035033W WO 2022065422 A1 WO2022065422 A1 WO 2022065422A1
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Prior art keywords
boat
gas
processing chamber
substrate processing
gas supply
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Ceased
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PCT/JP2021/035033
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English (en)
French (fr)
Japanese (ja)
Inventor
靖則 江尻
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Kokusai Electric Corp
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Kokusai Electric Corp
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Filing date
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Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP2022552063A priority Critical patent/JP7536106B2/ja
Priority to CN202180051749.7A priority patent/CN116114048B/zh
Priority to KR1020237003933A priority patent/KR102928729B1/ko
Publication of WO2022065422A1 publication Critical patent/WO2022065422A1/ja
Priority to US18/105,404 priority patent/US12354848B2/en
Anticipated expiration legal-status Critical
Priority to US19/228,249 priority patent/US20250299933A1/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H01J37/32577—Electrical connecting means
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    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
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    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
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    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity

Definitions

  • the present disclosure relates to a substrate processing device, a method for manufacturing a semiconductor device, and a recording medium, and more particularly to a technique for processing a substrate using plasma.
  • the present disclosure aims at suppressing the deterioration of the in-plane uniformity of the thin film formed on the surface of the substrate in consideration of the above circumstances.
  • a processing chamber a processing gas supply system for supplying the processing gas to the processing chamber, an exhaust system for exhausting the processing chamber, and a plasma generation structure for supplying plasma to the processing chamber.
  • a rotating shaft that rotatably supports a boat that has conductivity and holds a plurality of substrates in the processing chamber, and an internal conductor provided inside the tubular rotating shaft and electrically connected to the boat.
  • FIG. 1 is a perspective view showing a substrate processing apparatus according to an embodiment.
  • FIG. 2 is a sectional view taken along the line BB of FIG. 4 showing the processing furnace shown in FIG.
  • FIG. 3 is a vertical cross-sectional view showing the boat shown in FIG. 2 and the boat rotation mechanism.
  • FIG. 4 is a cross-sectional view taken along the line AA of the processing furnace shown in FIG.
  • FIG. 5 is a perspective view showing a portion C in FIG.
  • FIG. 6 is a block diagram showing a controller used in the substrate processing apparatus shown in FIG. 1 and each member controlled by the controller.
  • FIG. 7 is a flowchart showing the flow of a manufacturing process for forming a silicon oxide film on the surface of a wafer in the substrate processing apparatus shown in FIG.
  • the substrate processing device 101 is, for example, a semiconductor manufacturing device used for manufacturing a semiconductor device.
  • a pod 110 containing a wafer 200 which is an example of a substrate, is used.
  • the wafer 200 is made of a material such as semiconductor silicon.
  • the board processing device 101 includes a housing 111.
  • a pod stage 114 is installed inside the housing 111.
  • the pod 110 is carried onto the pod stage 114 or carried out from the pod stage 114 by an in-process transfer device (not shown).
  • the arrows shown in FIG. 1 indicate the vertical direction, the front-rear direction, and the left-right direction of the substrate processing device 101 (housing 111), respectively.
  • the pod 110 is placed on the pod stage 114 by an in-process transfer device (not shown). At this time, the pod 110 is placed on the pod stage 114 so that the wafer 200 in the pod 110 is in a vertical position and the wafer loading / unloading port of the pod 110 faces upward.
  • the seal cap 219 is configured to vertically support the boat 217 and to close the opening at the lower end of the processing furnace 202.
  • the boat elevator 115 By raising and lowering the seal cap 219 by the boat elevator 115, the boat 217 supported by the seal cap 219 is carried in and out of the processing chamber 201. Further, the plurality of wafers 200 held in the boat 217 are heated to a predetermined temperature by a heater 207 described later in a state of being inserted into the processing chamber 201.
  • the boat 217 is made of non-metal and is configured to be able to hold a plurality of (for example, about 50 to 150) wafers 200 in a horizontal posture and at predetermined intervals (equal intervals) in the vertical direction (vertical direction). Has been done. Further, the boat 217 holds the plurality of wafers 200 so that the centers of the plurality of wafers 200 are coaxially located.
  • a clean unit 134a that supplies clean air is installed above the pod shelf 105.
  • a clean unit 134b for supplying clean air is installed at the left end of the housing 111.
  • the processing furnace 202 is provided with a heater 207 which is a heating device (heating means) for heating the wafer 200.
  • the heater 207 includes a cylindrical heat insulating member whose upper part is closed, and a plurality of heater strands provided in the heat insulating member. Inside the heater 207, a quartz reaction tube 203 is provided concentrically with the heater 207.
  • a seal cap 219 is provided as a furnace palate body capable of airtightly closing the opening at the lower end of the reaction tube 203.
  • the seal cap 219 is in contact with the lower end of the reaction tube 203 from below in the vertical direction (vertical direction). Further, the seal cap 219 is made of a metal such as stainless steel and is formed in a disk shape.
  • An annular flange is provided at the lower end of the reaction tube 203.
  • An airtight member (hereinafter referred to as an O-ring) 220 is arranged between the lower surface of the flange and the upper surface of the seal cap 219. The gap between the flange and the seal cap 219 is airtightly sealed by the O-ring 220.
  • the processing chamber 201 of the present embodiment includes the reaction tube 203 and the seal cap 219.
  • a boat 217 holding a plurality of wafers 200 is arranged above the seal cap 219.
  • the boat 217 is supported by a boat support 218 described later.
  • the boat 217 has a bottom plate 210, a top plate 211, a plurality of columns 212, and a plurality of electrode plates 214 (see FIG. 3).
  • a plurality of columns 212 are erected on the bottom plate 210.
  • a top plate 211 is provided at the upper end of these columns 212.
  • a plurality of electrode plates 214 are provided on the plurality of columns 212.
  • the plurality of electrode plates 214 are formed in a ring shape.
  • a through hole 214A is formed in the central portion of the plurality of electrode plates 214.
  • These electrode plates 214 are supported by a plurality of columns 212 in a horizontal posture and at predetermined intervals in the vertical direction.
  • a wafer 200 is placed on the upper surface of these electrode plates 214.
  • Support grooves 213 into which the outer peripheral portion of the wafer 200 is inserted are formed in each of the plurality of columns 212.
  • Each support groove 213 is arranged adjacent to the upper surface of the outer peripheral portion of the electrode plate 214.
  • the upper surface of the outer peripheral portion of the electrode plate 214 is exposed in each support groove 213.
  • the outer peripheral portion of the wafer 200 is placed on the upper surface of the electrode plate 214.
  • the through hole 214A of the electrode plate 214 is closed by the wafer 200.
  • the processing space 215 is formed between the wafers 200 adjacent to each other in the vertical direction. The processing gas and plasma described later are supplied to each processing space 215.
  • the bottom plate 210, the plurality of columns 212, and the plurality of electrode plates 214 constituting the boat 217 are formed of, for example, dope silicon carbide having conductivity and heat resistance. As a result, when the wafer 200 is placed on the plurality of electrode plates 214, the boat 217 and the plurality of wafers 200 can be electrically connected (conducted).
  • the back surfaces of the electrode plate 214 and the bottom plate 210 may be electrically conductive, and only a part of the front surface may have conductivity. Therefore, the boat 217 may be formed, for example, by coating the surface of heat-resistant quartz, silicon carbide, or the like with a refractory metal coat having conductivity. Further, the electrode plate 214 and the top plate 211 are not essential. In particular, if the back surface of the wafer 200 is capable of ohmic contact or conduction by tunneling, the wafer 200 can be placed directly in the support groove 213.
  • the seal cap 219 is provided with a boat rotation mechanism 267 that rotates the boat 217.
  • the boat rotation mechanism 267 has a rotation shaft 264 and a drive source (not shown) such as a motor for rotating the rotation shaft 264.
  • the rotary shaft 264 penetrates the seal cap 219 in the vertical direction, is arranged inside and outside the processing chamber 201, and may be connected to the body of the boat rotary mechanism 267 via a bearing (not shown). Further, the gap between the rotating shaft 264 and the body of the boat rotating mechanism 267 can be sealed by, for example, a magnetic fluid.
  • connection portion 224 is formed in a columnar shape, for example.
  • the connecting portion 224 extends downward from the lower surface of the contact portion 223 and is electrically connected (conducted) to the upper end portion of the internal conductor 266.
  • the wafer 200 supported by the boat 217 and the internal conductor 266 are electrically connected via the metal member 222.
  • electrical connection does not require that the wafer 200 be conductive, it is sufficient if some conductor following the internal conductor 266 reaches the wafer 200.
  • the downstream end of the gas supply pipe 310 is connected to the lower end of the nozzle 410.
  • the nozzle 410 extends in the vertical direction along the inner wall surface of the reaction tube 203. Further, a plurality of gas supply holes 411 for supplying the processing gas (raw material gas) to the wafer 200 are provided on the side surface of the nozzle 410.
  • the plurality of gas supply holes 411 open the side surface of the nozzle 410 so as to face the wafer 200 side inserted in the reaction tube 203. Further, the plurality of gas supply holes 411 are arranged at intervals in the vertical direction so as to face the plurality of processing spaces 215 formed in the boat 217. As a result, the processing gas is supplied from the plurality of gas supply holes 411 to the plurality of processing spaces 215, respectively.
  • a carrier gas supply pipe 510 for supplying a carrier gas (inert gas) is connected to the downstream side of the valve 313 in the gas supply pipe 310.
  • the carrier gas supply pipe 510 is provided with a mass flow controller 512 and a valve 513.
  • the carrier gas supply system (inert gas supply system) 501 is mainly composed of the carrier gas supply pipe 510, the mass flow controller 512, and the valve 513.
  • the liquid raw material whose flow rate is adjusted by the liquid mass flow controller 312 is supplied to the vaporizer 315. Then, the liquid raw material vaporized by the vaporizer 315 becomes a processing gas and is supplied to the gas supply pipe 310.
  • the valve 612 when supplying the processing gas to the processing chamber 201, the valve 612 is closed and the valve 313 is opened to supply the processing gas to the gas supply pipe 310. Further, in the carrier gas supply system 501, the carrier gas whose flow rate is adjusted by the mass flow controller 512 is supplied to the carrier gas supply pipe 510 via the valve 513. Then, the carrier and the raw material gas are merged at the gas supply pipe 310 on the downstream side of the valve 313 and supplied to the processing chamber 201 via the nozzle 410.
  • the nozzle 420 is provided in the buffer chamber 423, which is a gas dispersion space (discharge chamber, discharge space).
  • the buffer chamber 423 In the buffer chamber 423, electrode protection tubes 451 and 452, which will be described later, are provided. A nozzle 420, an electrode protection tube 451 and an electrode protection tube 452 are arranged in this order in the buffer chamber 423.
  • the buffer chamber 423 is formed by the inner wall of the reaction tube 203 and the buffer chamber wall 424.
  • the buffer chamber wall 424 extends vertically along the inner wall of the reaction tube 203.
  • the horizontal cross-sectional shape of the buffer chamber wall 424 is C-shaped.
  • the buffer chamber wall 424 is provided from the lower part to the upper part of the inner wall of the reaction tube 203.
  • the buffer chamber wall 424 has an facing wall facing the wafer 200 inserted in the reaction tube 203.
  • a plurality of gas supply holes 425 for supplying plasma to the wafer 200 are provided on the facing wall.
  • the plurality of gas supply holes 425 open facing walls between the electrode protection tube 451 and the electrode protection tube 452.
  • the nozzle 420 is arranged on one end side of the buffer chamber 423.
  • the nozzle 420 extends in the vertical direction along the inner wall of the reaction tube 203.
  • a plurality of gas supply holes 421 for injecting gas are provided on the side surface of the nozzle 420.
  • the plurality of gas supply holes 421 open the side surface of the nozzle 420 so as to face the center of the buffer chamber 423.
  • the plurality of gas supply holes 421 are arranged at intervals in the vertical direction, similarly to the gas supply holes 425 of the buffer chamber 423.
  • the opening area and pitch of the plurality of gas supply holes 421 can be the same from the upstream side (lower part) to the downstream side (upper part) of the nozzle 420.
  • the opening area of the plurality of gas supply holes 421 may be increased or the pitch of the plurality of gas supply holes 421 may be decreased from the upstream side to the downstream side of the nozzle 420.
  • the valve 622 when supplying the processing gas to the processing chamber 201, the valve 622 is closed and the valve 323 is opened to supply the processing gas to the gas supply pipe 320. Further, in the carrier gas supply system 502, the carrier gas whose flow rate is adjusted by the mass flow controller 522 is supplied to the carrier gas supply pipe 520 via the valve 523. Then, the carrier and the processing gas are merged at the gas supply pipe 320 on the downstream side of the valve 323 and supplied to the processing chamber 201 via the nozzle 420 and the buffer chamber 423.
  • the configuration of the gas supply system 303 is basically the same as that of the gas supply system 302.
  • the gas supply pipe 330 is provided with a mass flow controller 332, which is a flow control device, and a valve 333, which is an on-off valve, in this order from the upstream side.
  • a vent line 630 and a valve 632 connected to the exhaust pipe 232 are provided between the valve 333 and the mass flow controller 332 in the gas supply pipe 330.
  • the gas supply system 303 is mainly composed of a gas supply pipe 330, a mass flow controller 332, a valve 333, a nozzle 430, a buffer chamber 433, a vent line 630, and a valve 632.
  • the downstream end of the gas supply pipe 330 is connected to the lower end of the nozzle 430.
  • the nozzle 430 is provided in the buffer chamber 433, which is a gas dispersion space (discharge chamber, discharge space).
  • the buffer chamber 433 In the buffer chamber 433, electrode protection tubes 461 and 462, which will be described later, are provided.
  • the electrode protection tube 461, and the electrode protection tube 462 are arranged in this order.
  • the buffer chamber 433 and its internal configuration are formed plane-symmetrically with the buffer chamber 423, and detailed description thereof will be omitted.
  • the buffer chamber wall 434 has an facing wall facing the wafer 200 inserted in the reaction tube 203.
  • a plurality of gas supply holes 435 for supplying plasma to the wafer 200 are provided on the facing wall.
  • the plurality of gas supply holes 435 open facing walls between the electrode protection tube 461 and the electrode protection tube 462.
  • the plurality of gas supply holes 435 are opened so as to face the wafer 200 side.
  • the plurality of gas supply holes 435 are arranged at intervals in the vertical direction so as to face the plurality of processing spaces 215.
  • a carrier gas supply pipe 530 for supplying a carrier gas (inert gas) is connected to the downstream side of the valve 333 in the gas supply pipe 330.
  • the carrier gas supply pipe 530 is provided with a mass flow controller 532 and a valve 533.
  • the carrier gas supply system (inert gas supply system) 503 is mainly composed of the carrier gas supply pipe 530, the mass flow controller 532, and the valve 533.
  • the configuration of the carrier gas supply system 503 is basically the same as that of the carrier gas supply system 502.
  • the gas raw material gas whose flow rate is adjusted by the mass flow controller 332 is supplied to the gas supply pipe 330.
  • a rod-shaped electrode 471 and a rod-shaped electrode 472 having an elongated structure are provided in the buffer chamber 423.
  • the rod-shaped electrode 471 and the rod-shaped electrode 472 extend in the vertical direction from the lower part to the upper part of the reaction tube 203.
  • the rod-shaped electrode 471 and the rod-shaped electrode 472 are provided substantially parallel to the nozzle 420.
  • the rod-shaped electrode 471 and the rod-shaped electrode 472 are covered with electrode protection tubes 451 and 452 as protection tubes.
  • the rod-shaped electrode 471 is connected to a radio frequency (RF: Radio Frequency) power supply 270 via a matching device 271.
  • the rod-shaped electrode 472 is connected to the ground 272 which is a reference potential. Then, when electric power is supplied from the high frequency power supply 270 to the rod-shaped electrode 471, plasma is generated in the plasma generation region between the rod-shaped electrode 471 and the rod-shaped electrode 472.
  • RF Radio Frequency
  • the first remote plasma generation structure 429 is mainly composed of the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451 and the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425. .. Further, in the present embodiment, the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451 and the electrode protection tube 452, the matching unit 271, and the high-frequency power supply 270 are mainly used as the first plasma generator (plasma generator).
  • a remote plasma source is configured. The first remote plasma source functions as an activation mechanism for activating the gas with plasma.
  • the buffer chamber 423 functions as a plasma generation chamber.
  • a rod-shaped electrode 481 and a rod-shaped electrode 482 having an elongated structure are provided in the buffer chamber 433, a rod-shaped electrode 481 and a rod-shaped electrode 482 having an elongated structure.
  • the rod-shaped electrode 481 and the rod-shaped electrode 482 extend in the vertical direction from the lower part to the upper part of the reaction tube 203.
  • the rod-shaped electrode 481 and the rod-shaped electrode 482 are provided substantially parallel to the nozzle 430.
  • the rod-shaped electrode 481 and the rod-shaped electrode 482 are covered with electrode protection tubes 461 and 462 as protection tubes.
  • the rod-shaped electrode 481 is connected to the high frequency power supply 270 via the matching unit 271.
  • the rod-shaped electrode 482 is connected to the ground 272 which is a reference potential. Then, when electric power is supplied from the high frequency power supply 270 to the rod-shaped electrode 481, plasma is generated in the plasma generation region between the rod-shaped electrode 481 and the rod-shaped electrode 482.
  • the electrode protection tube 461 and the electrode protection tube 462 are inserted into the buffer chamber 423 via the through holes 204 and 205 formed in the reaction tube 203 near the lower part of the boat support 218. ing.
  • the electrode protection tube 461 and the electrode protection tube 462 are fixed to the reaction tube 203 in the through holes 204 and 205.
  • the electrode protection tube 461 and the electrode protection tube 462 are fixed to the mounting plate 401 in a state of penetrating the holes 402 and 403 of the mounting plate 401 provided in the buffer chamber 423.
  • the mounting plate 401 is fixed to the reaction tube 203 and the buffer chamber wall 424.
  • the electrode protection tube 451 and the electrode protection tube 452 have the same configuration as the electrode protection tube 461 and the electrode protection tube 462.
  • the inside of the electrode protection tube 451 and the electrode protection tube 452 is isolated from the atmosphere of the buffer chamber 423.
  • the inside of the electrode protection tube 461 and the electrode protection tube 462 is isolated from the atmosphere of the buffer chamber 433.
  • the rod-shaped electrodes 471, 472, 481, 482 inserted into the electrode protection tubes 451, 452, 461, 462, respectively, may be oxidized by the heat of the heater 207. Therefore, the electrode protection tubes 451 and 452,461,462 are provided with an inert gas purge mechanism for suppressing the oxidation of the rod-shaped electrodes 471,472,481,482.
  • remote plasma is used for the substrate processing of this embodiment.
  • the plasma generated in the buffer chambers 423 and 433 partitioned from the processing chamber 201 is supplied to the processing chamber 201, and the wafer 200 in the processing chamber 201 is plasma-processed.
  • two rod-shaped electrodes 471 and 472 are housed in the buffer chamber 423, and two rod-shaped electrodes 481 and 482 are housed in the buffer chamber 433. Since the rod-shaped electrodes 472 and 482 are grounded and fed in an unbalanced manner, most of the electric lines of electric force extending from the rod-shaped electrodes 471 and 481 go to the rod-shaped electrodes 472 and 482, but the other part is a grounded heater. It faces the cover of the housing 207 and the housing 111.
  • a region of a strong electric field is formed so as to surround the two rod-shaped electrodes 471 and 472, and more specifically, a region of a strong electric field is formed so as to surround the electrode protection tubes 451 and 452, in which plasma is formed. Is generated.
  • an electric field is generated so as to surround the two rod-shaped electrodes 481 and 482, and more specifically, so as to surround the two electrode protection tubes 461 and 462, and plasma is generated. That is, the gas supplied from the nozzles 420 and 430 and filling the buffer chambers 423 and 433 is turned into plasma, and active species (plasma active species) are generated.
  • a weak electric field is also generated in a place other than the buffer chambers 423 and 433 in the processing chamber 201, and a small amount of plasma can be generated. Such a technique is called soft plasma.
  • the active species thus produced reach the surface of each wafer 200.
  • the buffer chambers 423 and 433 By providing the buffer chambers 423 and 433 on the inner wall surface of the reaction tube 203 and using soft plasma, in the present embodiment, when the buffer chambers 423 and 433 are provided on the outer wall surface of the reaction tube 203 or soft. Compared with the case where plasma is not used, the plasma active species can be reached on the surface of the wafer 200 without being deactivated.
  • the substrate processing apparatus 101 of the present embodiment includes two remote plasma generation structures, a first remote plasma generation structure 429 and a second remote plasma generation structure 439. .. Therefore, in the present embodiment, even if the high frequency power supplied to the first remote plasma generation structure 429 and the second remote plasma generation structure 439 is smaller than that in the case of one remote plasma generation structure, a sufficient amount is sufficient. Plasma can be generated. Therefore, in the present embodiment, when the wafer 200 is plasma-treated, the damage to the wafer 200 or the film formed on the surface of the wafer 200 can be reduced. Moreover, in the present embodiment, the processing temperature of the wafer 200 can be lowered.
  • first remote plasma generation structure 429 and the second remote plasma generation structure 439 are provided plane-symmetrically with respect to a vertical plane passing through the center of the wafer 200 (the center of the reaction tube 203).
  • plasma can be more uniformly supplied to the upper surface of the wafer 200 from the first remote plasma generation structure 429 and the second remote plasma generation structure 439.
  • a more uniform film can be formed on the surface of the wafer 200.
  • the gas supply hole 411 and the exhaust port 230 of the nozzle 410 are arranged so as to face each other with the wafer 200 in between.
  • the processing gas supplied from the gas supply hole 411 flows across the surface of the wafer 200 toward the exhaust pipe 231, so that the processing gas is more uniformly supplied to the entire surface of the wafer 200. be able to.
  • a more uniform film can be formed on the surface of the wafer 200.
  • the controller 280 may include a display 288 for displaying an operation menu or the like, and an operation input unit 290 having a plurality of keys and inputting various information and operation instructions.
  • the ROM 282 and the HDD 284 are a kind of computer-readable recording medium, and the controller 280 reads a program or the like recorded in them and exerts a predetermined function. A new program or the like recorded on an external recording medium can be loaded into the ROM 282 or the HDD 284.
  • the temperature control unit 291, the pressure control unit 294, the vacuum pump 246, the boat rotation mechanism 267, the boat elevator 115, the liquid mass flow controller 312, the mass flow controller 322,332,512,522,532, and the valve control unit 299 are communication interface units. They are connected to each other via 285, and various information is transmitted and received via the communication interface unit 285.
  • the temperature control unit 291 is a communication I / F unit 293 that transmits and receives various information such as set temperature information between the heater 207, the heating power supply 250 that supplies electric power to the heater 207, the temperature sensor 263, and the controller 280. It also includes a heater control unit 292 that controls the power supplied from the heating power supply 250 to the heater 207 based on the received set temperature information and the temperature information from the temperature sensor 263.
  • the heater control unit 292 is realized by a computer.
  • the communication I / F unit 293 of the temperature control unit 291 and the communication I / F unit 285 of the controller 280 are connected by a cable 751.
  • the valve control unit 299 includes valves 313,314,323,333,513,523,533,612,622,632, which are air valves, and valves 313,314,323,333,513,523,533,612,622. It is equipped with a solenoid valve group 298 that controls the supply of air to the 632.
  • the solenoid valve group 298 includes solenoid valves 297 corresponding to valves 313,314,323,333,513,523,533,612,622,632, respectively.
  • the solenoid valve group 298 and the communication I / F unit 285 of the controller 280 are connected via a cable 763.
  • Each member such as the power supply 250, the temperature sensor 263, the pressure sensor 245, the vacuum pump 246, the boat rotation mechanism 267, the boat elevator 115, and the high frequency power supply 270 is connected to the controller 280.
  • a plurality of types of gases containing a plurality of elements constituting a film to be formed are simultaneously supplied to a silicon wafer. Further, in the cyclic deposition method, a plurality of types of gases containing a plurality of elements constituting the film to be formed are alternately supplied to the silicon wafer. Then, a silicon oxide film (SiO film) or a silicon nitride film (SiN film) is formed by controlling the processing conditions such as the supply flow rate of gas and the like, the supply time, and the plasma power.
  • the treatment conditions for the purpose of making the composition ratio of the film to be formed a predetermined composition ratio different from the stoichiometric composition. That is, the treatment conditions are controlled for the purpose that at least one element among the plurality of elements constituting the film to be formed is excessive with respect to the stoichiometric composition as compared with the other elements. It is also possible to form a film while controlling the ratio of a plurality of elements constituting the film formed in this way, that is, the composition ratio of the film. In the following, an example of a sequence in which a plurality of types of gases containing different types of elements are alternately supplied to form a silicon oxide film having a stoichiometric composition will be described.
  • the heating power supply 250 that supplies electric power to the heater 207 is controlled, and the temperature in the processing chamber 201 is maintained at a temperature of 200 ° C. or lower, more preferably 100 ° C. or lower, for example, 100 ° C. ..
  • a plurality of wafers 200 on which a resist pattern is formed are loaded (wafer charged) into the boat 217 (step S201).
  • step S202 the furnace opening shutter 147 (see FIG. 1) is opened.
  • the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat load) (step S202).
  • the seal cap 219 is in a state of sealing the lower end of the reaction tube 203 via the O-ring 220.
  • the boat 217 is rotated by the boat rotation mechanism 267, and a plurality of wafers 200 held by the boat 217 are rotated.
  • the valve 612 when supplying the SI raw material gas to the processing chamber 201, the valve 612 is closed and the valve 313 is opened to supply the SI raw material gas to the gas supply pipe 310 downstream of the valve 313. Further, the valve 513 is opened to supply the carrier gas (N 2 ) from the carrier gas supply pipe 510. At this time, the flow rate of the carrier gas (N 2 ) is adjusted by the mass flow controller 512. Then, the SI raw material gas and the carrier gas (N 2 ) are merged and mixed at the gas supply pipe 310 on the downstream side of the valve 313, and are exhausted while being supplied to the processing chamber 201 through the gas supply hole 411 of the nozzle 410. It is exhausted from the pipe 231.
  • the APC valve 243 is appropriately adjusted to maintain the pressure in the processing chamber 201 in the range of 50 to 900 Pa, for example, 300 Pa. Further, the supply amount of the SI raw material gas controlled by the liquid mass flow controller 312 is in the range of 0.05 to 3.00 g / min, for example, 1.00 g / min.
  • the notation of a numerical range such as "50 to 900 Pa" in the present specification means that the lower limit value and the upper limit value are included in the range. Therefore, "50 to 900 Pa” means "50 Pa or more and 900 Pa or less". The same applies to other numerical ranges.
  • the gas flowing in the processing chamber 201 is only the SI raw material gas and the inert gas N 2 , and O 2 does not exist. Therefore, the SI raw material gas does not cause a gas phase reaction, but undergoes a surface reaction (chemical adsorption) with the surface or base film of the wafer 200 to cause an adsorption layer or Si layer (hereinafter, Si-containing) of the raw material (SI raw material gas). Layer) is formed.
  • the chemisorption layer of the SI raw material gas includes a continuous adsorption layer of SI raw material gas molecules and a discontinuous chemisorption layer.
  • the Si layer includes not only a continuous layer composed of Si but also a Si thin film formed by overlapping these layers. A continuous layer composed of Si may be referred to as a Si thin film.
  • valve 523 when the valve 523 is opened and N 2 (inert gas) is flowed from the carrier gas supply pipe 520 to the middle of the gas supply pipe 320, SI is sent to the nozzle 420, the buffer chamber 423, and the gas supply pipe 320 on the oxygen-containing gas side. It is possible to prevent the raw material gas from wrapping around.
  • the valve 533 when the valve 533 is opened and N 2 (inert gas) flows from the carrier gas supply pipe 530 to the gas supply pipe 330 in the middle, the nozzle 430 on the oxygen-containing gas side, the buffer chamber 433, and the gas supply pipe It is possible to prevent the SI raw material gas from wrapping around the 330. Since the SI raw material gas is prevented from wrapping around, the flow rate of N 2 (inert gas) controlled by the mass flow controller 522 and 532 may be small.
  • step S206 oxygen-containing gas is supplied from the gas supply pipe 320 of the gas supply system 302 into the buffer chamber 423 through the gas supply hole 421 of the nozzle 420.
  • high-frequency power is applied between the rod-shaped electrode 471 and the rod-shaped electrode 472 from the high-frequency power supply 270 via the matching unit 271.
  • the oxygen-containing gas supplied into the buffer chamber 423 is plasma-excited, supplied into the processing chamber 201 from the gas supply hole 425 as an active species, and exhausted from the exhaust pipe 231.
  • the flow rate of the oxygen-containing gas supplied in the buffer chamber 423 is adjusted by the mass flow controller 322.
  • oxygen-containing gas is supplied from the gas supply pipe 330 of the gas supply system 303 into the buffer chamber 433 through the gas supply hole 431 of the nozzle 430.
  • high-frequency power is applied between the rod-shaped electrode 481 and the rod-shaped electrode 482 from the high-frequency power supply 270 via the matching unit 271.
  • the oxygen-containing gas supplied into the buffer chamber 433 is plasma-excited, supplied into the processing chamber 201 as an active species from the gas supply hole 435, and exhausted from the exhaust pipe 231.
  • the flow rate of the oxygen-containing gas supplied into the buffer chamber 433 is adjusted by the mass flow controller 332.
  • valve 323 Before supplying the oxygen-containing gas to the buffer chamber 423, the valve 323 is closed and the valve 622 is opened to allow the oxygen-containing gas to flow to the vent line 620 via the valve 622.
  • valve 333 before supplying the oxygen-containing gas to the buffer chamber 433, the valve 333 is closed and the valve 632 is opened to allow the oxygen-containing gas to flow to the vent line 630 via the valve 632.
  • the valve 622 When supplying the oxygen-containing gas to the buffer chamber 423, the valve 622 is closed and the valve 323 is opened to supply the oxygen-containing gas to the gas supply pipe 320 downstream of the valve 323, and the valve 523 is opened to open the carrier gas.
  • Carrier gas (N 2 ) is supplied from the supply pipe 520 to the gas supply pipe 320.
  • the flow rate of the carrier gas (N 2 ) is adjusted by the mass flow controller 522.
  • the oxygen-containing gas and the carrier gas (N 2 ) are merged and mixed at the gas supply pipe 320 on the downstream side of the valve 323, and are supplied to the buffer chamber 423 via the nozzle 420.
  • the valve 632 When supplying the oxygen-containing gas to the buffer chamber 433, the valve 632 is closed and the valve 333 is opened to supply the oxygen-containing gas to the gas supply pipe 330 downstream of the valve 333, and the valve 533 is opened to open the carrier gas.
  • Carrier gas (N 2 ) is supplied from the supply pipe 530 to the gas supply pipe 330.
  • the flow rate of the carrier gas (N 2 ) is adjusted by the mass flow controller 532.
  • the oxygen-containing gas and the carrier gas (N 2 ) are merged and mixed at the gas supply pipe 330 on the downstream side of the valve 333, and are supplied to the buffer chamber 433 via the nozzle 430.
  • the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, 500 Pa, which is in the range of 50 to 900 Pa. ..
  • the supply flow rate of the oxygen-containing gas controlled by the mass flow controller 322 is, for example, a flow rate in the range of 2000 to 9000 sccm, and is set to, for example, 6000 sccm.
  • the supply flow rate of the oxygen-containing gas controlled by the mass flow controller 332 is, for example, a flow rate in the range of 2000 to 9000 sccm, for example, 6000 sccm.
  • the time for exposing the wafer 200 to the active species obtained by plasma-exciting the oxygen-containing gas that is, the gas supply time is, for example, a time within the range of 3 to 20 seconds, and is, for example, 9 seconds.
  • the high-frequency power applied between the high-frequency power supply 270 and the rod-shaped electrode 471 and the rod-shaped electrode 472 is, for example, a power in the range of 20 to 600 W, and is set to be, for example, 200 W.
  • the high frequency power applied between the rod-shaped electrode 481 and the rod-shaped electrode 482 from the high-frequency power supply 270 is set to be, for example, 200 W, which is in the range of 20 to 600 W.
  • High frequency power may be supplied continuously or intermittently during the gas supply time. By intermittently exciting on the order of several microseconds, the electron temperature can be lowered and the generation of negative ions can be promoted.
  • the heating power source 250 that supplies electric power to the heater 207 is controlled to keep the temperature in the processing chamber 201 at 200 ° C. or lower, more preferably 100 ° C. or lower, for example, 100 ° C. ..
  • the oxygen-containing gas has a high reaction temperature as it is, and it is difficult to react at the temperature and pressure in the processing chamber 201 as described above. Therefore, by plasma-exciting the oxygen-containing gas to make it an active species and then flowing it into the processing chamber 201, the temperature inside the processing chamber 201 can be set in the low temperature range as described above. However, since it takes time to change the temperature in the processing chamber 201, it is preferable that the temperature in the processing chamber 201 is the same as the temperature at which the Si raw material gas is supplied.
  • the active species produced in each of the buffer chambers 423 and 433 are supplied from the plurality of gas supply holes 425 and 435 to the plurality of processing spaces 215 in the boat 217, respectively, together with the gas flow.
  • the gas flowing in the treatment chamber 201 is a mixed gas containing oxygen and N 2 , and contains excited (metastable) O 2 molecules, O atoms, O + ions and the like as active species.
  • the SI raw material gas is not flowing in the processing chamber 201. Therefore, the oxygen-containing gas does not cause a gas phase reaction.
  • the oxygen-containing gas that has become an active species or has been activated reacts with the silicon-containing layer as the first layer formed on the wafer 200 in step S204.
  • the silicon-containing layer is oxidized and reformed into a silicon oxide layer (SiO layer) as a second layer containing silicon (first element) and oxygen (second element).
  • N 2 inert gas
  • the flow rate of N 2 (inert gas) controlled by the mass flow controller 512 may be small in order to prevent the oxygen content from sneaking around.
  • a sheath is formed on the surface of the wafer 200 due to the potential difference between the plasma space and the wafer 200.
  • This sheath makes it difficult for the active species (plasma active species) to flow to the wafer 200 side or dissociate, so that the in-plane uniformity of the thin film deposited on the surface of the wafer 200 may decrease. be.
  • the processing space 215 is too far from the plasma space and the density of charged particles is low and homogenization of the incident of the active species cannot be expected due to self-bias, or when the deactivation of the active species is progressing, the in-plane uniformity is achieved. The sex may be reduced.
  • a DC bias is applied from the DC power supply 269 to the plurality of wafers 200 via the boat rotation mechanism 267 and the boat 217, respectively, and the sheath or the surrounding electric field formed on the surface of each wafer 200 is applied. Control. Even if the back side of the wafer 200 is an insulator, the electrode plate 214 can form a rotationally symmetric bias electric field around the wafer 200 to substantially bias the wafer 200.
  • the boat 217 has conductivity and is electrically connected to a plurality of wafers 200. The boat 217 is electrically connected to a DC power supply 269 via a metal member 222 of the boat support 218, an internal conductor 266 of the boat rotation mechanism 267, and a slip ring 268.
  • the polarity and voltage of the DC bias can be selected so as to suppress the deterioration of the in-plane uniformity of the silicon oxide layer deposited on the surface of the wafer 200.
  • step S207 residual gas such as residual oxygen-containing gas that has not reacted or has contributed to oxidation is removed from the treatment chamber 201.
  • the valve 323 of the gas supply pipe 320 is closed to stop the supply of the oxygen-containing gas to the processing chamber 201, and the valve 622 is opened to allow the oxygen-containing gas to flow to the vent line 620.
  • the valve 333 of the gas supply pipe 330 is closed to stop the supply of the oxygen-containing gas to the processing chamber 201, the valve 632 is opened, and the oxygen-containing gas flows to the vent line 630.
  • the inert gas such as N 2 is supplied to the processing chamber 201 and exhausted to purge the inside of the processing chamber 201 with the inert gas (gas purge: step S210).
  • the APC valve 243 is closed and the valves 513, 523, 533 are opened to supply the inert gas such as N 2 into the processing chamber 201, and the valves 513, 523 and 523. It is preferable to repeat the steps of opening the APC valve 243 and drawing a vacuum in the processing chamber 201 with the 533 closed and the supply of the inert gas such as N 2 to the processing chamber 201 stopped.
  • Step S212 After that, the seal cap 219 is lowered by the boat elevator 115 to open the opening at the lower end of the reaction tube 203, and the boat 217 is carried out from the opened opening to the outside of the processing chamber 201 (boat unloading: step S214). do. After that, the opening at the lower end of the reaction tube 203 is closed by the furnace opening shutter 147. After that, the vacuum pump 246 is stopped. After that, the plurality of processed wafers 200 are taken out from the boat 217 (wafer discharge: step S216). As a result, one film forming process (batch process) is completed.
  • N 2 replacement of the inert gas
  • step S206 the controller 280 controls the DC power supply 269 and applies a DC bias from the DC power supply 269 to the plurality of wafers 200 via the boat rotation mechanism 267 and the boat 217. do.
  • the sheath formed on the surface of the wafer 200 shrinks, and the plasma active species are easily drawn into the surface of the wafer 200 and are easily dissociated.
  • the reaction between the plasma active species and the silicon-containing layer on the surface of the wafer 200 is promoted. Therefore, the deterioration of the in-plane uniformity of the silicon oxide layer deposited on the surface of the wafer 200 is suppressed.
  • the DC power supply 269 is electrically connected to the internal conductor 266 of the boat rotation mechanism 267 via a slip ring 268 by a DC coupling. With this slip ring 268, DC power can be stably supplied from the DC power supply 269 to the rotating internal conductor 266.
  • the boat 217 is electrically connected to the inner conductor 266 via the metal member 222 of the boat support 218. More specifically, the boat support 218 has an insulating member 221 and a metal member 222. The lower surface of the bottom plate 210 of the boat 217 is fixed to the upper surface 221U of the insulating member 221 in a state of being mounted. A contact portion 223 of the metal member 222 is provided inside the insulating member 221. The contact surface 223U of the contact portion 223 is exposed from the upper surface 221U of the insulating member 221 and is in contact with the lower surface of the bottom plate 210 of the boat 217.
  • the entire surface of the contact surface 223U of the contact portion 223 is covered with the lower surface of the bottom plate 210 of the boat 217.
  • the lower surface of the bottom plate 210 protects the contact surface 223U of the contact portion 223 from processing gas, plasma, and the like.
  • the reaction tube 203 is provided with two remote plasma generation structures, a first remote plasma generation structure 429 and a second remote plasma generation structure 439.
  • the reaction tube 203 can be provided with at least one remote plasma generation structure.
  • N 2 nitrogen
  • He helium
  • Ne neon
  • Ar argon
  • He gas tends to generate negative ions.

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  • Analytical Chemistry (AREA)
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  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
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