WO2022059167A1 - 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料 - Google Patents

半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料 Download PDF

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Publication number
WO2022059167A1
WO2022059167A1 PCT/JP2020/035462 JP2020035462W WO2022059167A1 WO 2022059167 A1 WO2022059167 A1 WO 2022059167A1 JP 2020035462 W JP2020035462 W JP 2020035462W WO 2022059167 A1 WO2022059167 A1 WO 2022059167A1
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Prior art keywords
temperature
prepreg
laminate
mass
substrate material
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PCT/JP2020/035462
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English (en)
French (fr)
Japanese (ja)
Inventor
一行 満倉
俊亮 大竹
正樹 高橋
広明 藤田
伸治 島岡
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Resonac Corp
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Showa Denko Materials Co Ltd
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Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Priority to PCT/JP2020/035462 priority Critical patent/WO2022059167A1/ja
Priority to JP2022534621A priority patent/JP7239065B2/ja
Priority to US18/245,347 priority patent/US20230331946A1/en
Priority to KR1020237009217A priority patent/KR20230058428A/ko
Priority to PCT/JP2021/033973 priority patent/WO2022059716A1/ja
Priority to TW110134525A priority patent/TWI918719B/zh
Publication of WO2022059167A1 publication Critical patent/WO2022059167A1/ja
Priority to JP2023031149A priority patent/JP7764871B2/ja
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
    • C08J5/241—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres
    • C08J5/244—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs using inorganic fibres using glass fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/14—Layered products comprising a layer of metal next to a fibrous or filamentary layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/02—Composition of the impregnated, bonded or embedded layer
    • B32B2260/021—Fibrous or filamentary layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/04—Impregnation, embedding, or binder material
    • B32B2260/046—Synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/07—Parts immersed or impregnated in a matrix
    • B32B2305/076—Prepregs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B32B2307/737—Dimensions, e.g. volume or area
    • B32B2307/7375—Linear, e.g. length, distance or width
    • B32B2307/7376—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2463/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials

Definitions

  • the present invention relates to a method for manufacturing a substrate material for a semiconductor package, a prepreg, and a substrate material for a semiconductor package.
  • a wiring board for a semiconductor package In order to realize high-speed transmission and miniaturization of semiconductor devices, it is required to connect a wiring board for a semiconductor package and a semiconductor chip at high density.
  • a wiring board for a semiconductor package As a wiring board for a semiconductor package, a structure capable of connecting different types of semiconductor chips in parallel by a fine wiring layer and a structure capable of mounting a semiconductor chip having fine bumps have been proposed.
  • a wiring board for a semiconductor package on which a semiconductor chip is mounted is often manufactured by forming wiring on a copper foil of a substrate material for a semiconductor package.
  • the substrate material for a semiconductor package is manufactured by laminating several prepregs and copper foil.
  • the wiring board for a semiconductor package may be required to have fine wiring with a width of 10 ⁇ m or less.
  • fine wiring may be required to have fine wiring with a width of 10 ⁇ m or less.
  • minute variations in the width of the wiring may become apparent as a problem that cannot be ignored.
  • one aspect of the present invention is to provide a substrate material for a semiconductor package that enables stable formation of fine wiring while suppressing variation in wiring width.
  • One aspect of the present invention has a metal leaf, one or more prepregs, and a metal leaf, and raises the temperature of the laminated body in which these are laminated in this order to a hot press temperature while pressurizing the laminated body.
  • the insulating substrate formed from the prepreg and the metal provided on both sides of the insulating substrate.
  • a method for producing a substrate material for a semiconductor package which comprises a step of forming a substrate material having a foil and in this order.
  • the prepreg contains an inorganic fiber base material and a thermosetting resin composition impregnated in the inorganic fiber base material.
  • thermosetting resin composition The content of the thermosetting resin composition is 40 to 80% by mass based on the mass of the prepreg.
  • the laminate is heated under the condition that the minimum melt viscosity of the prepreg is 5000 Pa ⁇ s or less.
  • the minimum melt viscosity of a prepreg changes depending on the influence of heating conditions such as the rate of temperature rise.
  • a laminate containing a prepreg having a specific resin content is provided under the condition that the minimum melt viscosity of the prepreg is 5000 Pa ⁇ s or less.
  • the minimum melt viscosity of the prepreg is 5000 Pa ⁇ s or less.
  • thermosetting resin composition impregnated in the inorganic fiber base material.
  • the content of the thermosetting resin composition is 40 to 80% by mass based on the mass of the prepreg.
  • the minimum melt viscosity of the prepreg measured at a heating rate of 4 ° C./min is 5000 Pa ⁇ s or less.
  • Yet another aspect of the present invention includes an insulating resin layer, an insulating substrate having an inorganic fiber base material provided in the insulating resin layer, and metal foils provided on both sides of the insulating substrate. , Provides substrate materials for semiconductor packages.
  • the content of the insulating resin layer is 40 to 80% by mass with respect to the mass of the insulating substrate.
  • the standard deviation of the thickness of the substrate material is 4 ⁇ m or less.
  • the substrate material for a semiconductor package according to one aspect of the present invention has a small variation in thickness, it is possible to form wiring while suppressing variation in wiring width.
  • a substrate material for a semiconductor package that enables stable formation of fine wiring while suppressing variation in wiring width. Since the variation in wiring width is small, high-density fine particles can easily form wiring. Since the substrate material for a semiconductor package according to one aspect of the present invention has a small variation in thickness, wiring for transmitting a signal having a high frequency can be easily formed.
  • the substrate material for a semiconductor package according to one aspect of the present invention is also excellent in terms of warpage reduction.
  • the wiring board formed from the substrate material for a semiconductor package according to one aspect of the present invention makes it possible to mount a semiconductor chip having fine bumps with high reliability and good productivity.
  • FIG. 1 is a cross-sectional view showing an embodiment of a prepreg.
  • the prepreg 1 shown in FIG. 1 includes an inorganic fiber base material 11 and a thermosetting resin composition 12 impregnated in the inorganic fiber base material 11.
  • the inorganic fiber base material 11 can be, for example, a woven fabric or a non-woven fabric containing the inorganic fiber.
  • the inorganic fiber constituting the inorganic fiber base material 11 may be a glass fiber, a carbon fiber, or a combination thereof.
  • the inorganic fiber base material 11 may be a glass cloth made of glass fibers.
  • the ratio of the glass fiber to the inorganic fiber constituting the inorganic fiber base material may be 80 to 100% by mass, 90 to 100% by mass, 95 to 100% by mass, or 99 to 100% by mass.
  • the glass fiber may be, for example, E glass, S glass, or quartz glass.
  • the thickness of the inorganic fiber base material 11 may be 0.01 to 0.20 ⁇ m.
  • the minimum melt viscosity of prepreg 1 measured at a heating rate of 4 ° C./min may be 5000 Pa ⁇ s or less.
  • the minimum melt viscosity of the prepreg is 10 Hz in shear mode while sandwiching the prepreg test piece between two parallel plates with a diameter of 8 mm and raising the temperature from 20 ° C to 200 ° C or higher at a predetermined heating rate. It is the lowest value of the melt viscosity when the dynamic viscoelasticity measurement of is performed.
  • the thickness of the test piece for measurement is 10 to 400 ⁇ m, and if necessary, the test piece is produced by laminating two or more prepregs.
  • ARES manufactured by Leometrics Scientific FE Co., Ltd.
  • the minimum melt viscosity of the prepreg 1 measured at a heating rate of 4 ° C./min may be 3000 Pa ⁇ s or less, or 1000 Pa ⁇ s or more.
  • the temperature at which the prepreg 1 exhibits the minimum melt viscosity may be 80 ° C. or higher from the viewpoint of handleability of the prepreg, or 120 ° C. or higher from the viewpoint of storage stability.
  • the temperature at which the prepreg 1 exhibits the minimum melt viscosity may be 200 ° C. or lower from the viewpoint of productivity, or 180 ° C. or lower from the viewpoint of warpage reduction. From the above, the temperature at which the prepreg 1 exhibits the minimum melt viscosity may be 120 to 180 ° C.
  • the content of the thermosetting resin composition 12 in the prepreg 1 may be 40 to 80% by mass.
  • a prepreg containing the thermosetting resin composition 12 in a proportion of 40 to 80% by mass a substrate material for a semiconductor package having a small variation in thickness can be easily produced by a method described later.
  • the content of the thermosetting resin composition 12 can be adjusted, for example, by the amount of the curable resin composition applied according to the thickness of the inorganic fiber base material 11.
  • thermosetting resin composition 12 in the prepreg 1 is divided into a region of the inorganic fiber base material 11 and a region of the thermosetting resin composition 12 by binarization treatment, for example, in a cross-sectional photograph of the prepreg 1. , Each can be determined by a method including calculating the area. In that case, the density of the inorganic fiber base material 11 and the density of the thermosetting resin composition 12 may be considered to be the same.
  • the thermosetting resin composition 12 may contain an inorganic component in addition to the thermosetting resin component.
  • the ratio of the resin component in the thermosetting resin composition 12 may be 20 to 100% by mass with respect to the mass of the thermosetting resin composition 12, and is 20 to 80% by mass from the viewpoint of reducing the linear expansion coefficient. It may be 30 to 100% by mass from the viewpoint of reducing voids after lamination, and may be 40 to 100% by mass from the viewpoint of further improving the flatness of the substrate material. From the above, the ratio of the resin component in the thermosetting resin composition 12 may be 40 to 80% by mass with respect to the mass of the thermosetting resin composition 12. That is, the ratio of the resin component in the prepreg 1 may be 16 to 64% by mass.
  • the ratio of the resin component contained in the thermosetting resin composition 12 can be calculated by a method such as ash content measurement.
  • the ash content measurement is a method of calculating the ratio of the resin component by carbonizing the resin component at a high temperature.
  • thermosetting resin composition 12 the components excluding the inorganic component may be regarded as the resin component.
  • An example of an inorganic component is an inorganic filler.
  • the component excluding the inorganic filler may be regarded as the resin component.
  • the minimum melt viscosity of prepreg 1 can be controlled by the resin component.
  • the minimum melt viscosity is not particularly limited, but is, for example, the ratio of the resin component to the inorganic component, the molecular weight and glass transition temperature of the high molecular weight component contained in the resin component, the type of thermosetting resin and its blending ratio, and the curing accelerator. It can be controlled by adjusting the type and blending ratio.
  • the molecular weight and glass transition temperature of the high molecular weight component contained in the resin component, and the type and blending ratio of the curing accelerator can greatly affect the behavior of the melt viscosity of the prepreg.
  • the glass transition temperature of the high molecular weight component may be lower than the temperature at which the curing reaction of the thermosetting resin composition is activated.
  • the glass transition temperature of the high molecular weight component is the dynamic viscoelasticity of the strip-shaped molded body of the high molecular weight component in the temperature range of 40 to 350 ° C. under the conditions of a distance between chucks of 20 mm, a frequency of 10 Hz, and a heating rate of 5 ° C./min.
  • a dynamic viscoelasticity measuring device manufactured by UBM can be used.
  • the temperature at which the curing reaction of the thermosetting resin composition is activated is, for example, when the differential scanning calorimetry of the thermosetting resin composition is performed in the temperature range of 40 to 350 ° C. at a heating rate of 5 ° C./min.
  • the temperature may be such that the calorific value due to the curing reaction shows the maximum value.
  • a differential scanning calorimetry apparatus manufactured by PerkinElmer can be used.
  • the glass transition temperature of the high molecular weight component may be 10 to 80 ° C. lower than the temperature at which the curing reaction of the thermosetting resin composition is activated. From the viewpoint of reducing the influence of temperature variation when laminating the prepreg, the glass transition temperature of the high molecular weight component may be 20 to 80 ° C. lower than the temperature at which the curing reaction of the thermosetting resin composition is activated. From the viewpoint of suppressing voids when laminating prepregs, the glass transition temperature of the high molecular weight component may be 10 to 60 ° C. lower than the temperature at which the curing reaction of the thermosetting resin composition is activated. From the above, the glass transition temperature of the high molecular weight component may be 20 to 60 ° C. lower than the temperature at which the curing reaction of the thermosetting resin composition is activated.
  • the thermosetting resin composition 12 may contain a thermoplastic resin as a high molecular weight component.
  • the thermoplastic resin is not particularly limited as long as it is a resin that softens by heating, and may have one or more reactive functional groups at the molecular end or in the molecular chain.
  • the reactive functional group include an epoxy group, a hydroxyl group, a carboxyl group, an amino group, an amide group, an isocyanato group, an acryloyl group, a methacryloyl group, a vinyl group, and a maleic anhydride group.
  • the thermoplastic resin may be at least one selected from, for example, acrylic resin, polyamide resin, polyimide resin, and polyurethane resin.
  • the content of the thermoplastic resin may be, for example, 20 to 80% by mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12.
  • the thermoplastic resin may contain a resin having a siloxane group.
  • a resin having a siloxane group may be a silicone resin.
  • the thermoplastic resin may contain a polyimide resin having a siloxane group.
  • the polyimide resin having a siloxane group may be, for example, a polymer produced by a reaction between a siloxane diamine and a tetracarboxylic acid dianhydride, or a polymer produced by a reaction between a siloxane diamine and a bismaleimide.
  • the siloxane diamine may be, for example, a compound represented by the following general formula (5).
  • Q4 and Q9 each independently indicate a phenylene group which may have an alkylene group or a substituent having 1 to 5 carbon atoms, and Q5, Q6 , Q7 and Q8 are independent of each other.
  • An alkyl group having 1 to 5 carbon atoms, a phenyl group or a phenoxy group, and d represents an integer of 1 to 5.
  • siloxane diamines examples include “PAM-E” (amino group equivalent 130 g / mol), “KF-8010” (amino group equivalent 430 g / mol), and "X-22-", which have amino groups at both ends.
  • siloxane diamine in terms of reactivity with the maleimide group, "PAM-E”, “KF-8010", “X-22-161A”, “X-22-161B”, “BY-16-853U” and You may select siloxane diamine from “BY-16-853".
  • siloxane diamine in terms of dielectric properties, siloxane diamine may be selected from “PAM-E”, “KF-8010”, “X-22-161A”, “BY-16-853U”, and “BY-16-853". From the viewpoint of varnish compatibility, siloxane diamine may be selected from “KF-8010", “X-22-161A” and "BY-16-853".
  • the content of the siloxane group in the polyimide resin having a siloxane group is not particularly limited, but may be 5 to 50% by mass based on the mass of the polyimide resin from the viewpoint of reactivity and compatibility.
  • the content of the siloxane group may be 5 to 30% by mass from the viewpoint of heat resistance, and may be 10 to 30% by mass from the viewpoint of further reducing the hygroscopicity.
  • the polyimide resin may be a polymer synthesized from a diamine other than siloxane diamine, or may be a polymer synthesized from a combination of siloxane diamine and other diamines.
  • the other diamines used as raw materials for the polyimide resin are not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, and 3,4'-.
  • aliphatic ether diamine represented by the above general formula (4) the following general formula; Examples thereof include an aliphatic diamine represented by the above, and an aliphatic ether diamine represented by the following general formula (12).
  • equation (12) e represents an integer from 0 to 80.
  • Examples of the aliphatic diamine represented by the general formula (11) are 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, and 1,6-.
  • Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, and 1,2-diamino Cyclohexane can be mentioned.
  • the diamines exemplified above can be used alone or in combination of two or more.
  • Tetracarboxylic dianhydride can be used as a raw material for the polyimide resin.
  • tetracarboxylic acid dianhydrides include pyromellitic acid dianhydride, 3,3', 4,4'-biphenyltetracarboxylic acid dianhydride, 2,2', 3,3'-biphenyltetracarboxylic acid.
  • the tetracarboxylic acid dianhydride represented by the above general formula (7) can be synthesized from anhydrous trimellitic acid monoclonalide and the corresponding diol, and specifically 1,2- (ethylene) bis.
  • the tetracarboxylic dianhydride may contain a tetracarboxylic dianhydride represented by the following general formula (6) or (8) from the viewpoint of imparting good solubility in a solvent and moisture resistance reliability. ..
  • tetracarboxylic dianhydride as described above, one type can be used alone or two or more types can be used in combination.
  • Bismaleimide can be used as a raw material for the polyimide resin.
  • Bismaleimide is not particularly limited, and examples thereof include bis (4-maleimidephenyl) methane, polyphenylmethanemaleimide, bis (4-maleimidephenyl) ether, and bis (4-maleimidephenyl) sulfone, 3,3-.
  • Dimethyl-5,5-diethyl-4,4-diphenylmethanebismaleimide, 4-methyl-1,3-phenylenebismaleimide, m-phenylenebismaleimide, 2,2-bis (4- (4-maleimidephenoxy) phenyl) Examples include propane. These can be used alone or in admixture of two or more.
  • Bismaleimide has high reactivity and can further improve dielectric properties and lineability.
  • Bis (4-maleimidephenyl) methane, bis (4-maleimidephenyl) sulfone, 3,3-dimethyl-5,5-diethyl-4, 4-Diphenylmethanebismaleimide, 2,2-bis (4- (4-maleimidephenoxy) phenyl) propane may be selected, and 3,3-dimethyl-5,5-diethyl from the viewpoint of solubility in a solvent.
  • -Maleimide phenyl) methane may be selected, 2,2-bis (4- (4-maleimide phenoxy) phenyl) propane and Digigner Moleculars Incorporated BMI-3000 (product name) from the viewpoint of lineability. ) May be selected.
  • the thermosetting resin composition 12 contains a thermosetting resin which is a compound that forms a crosslinked polymer by heating.
  • Thermosetting resins usually have a reactive functional group that causes a cross-linking reaction.
  • the reactive functional group may be, for example, an epoxy group, a hydroxyl group, a carboxyl group, an amino group, an amide group, an isocyanato group, an acryloyl group, a methacryloyl group, a vinyl group, a maleic anhydride group, or a combination thereof.
  • the content of the thermosetting resin may be, for example, 20 to 80% by mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12.
  • the thermosetting resin composition 12 may contain an epoxy resin as the thermosetting resin.
  • the epoxy resin may be a compound containing two or more epoxy groups.
  • the epoxy resin may be a phenolic glycidyl ether type epoxy resin from the viewpoint of curability and cured product properties.
  • phenolic glycidyl ether type epoxy resins include biphenyl aralkyl type epoxy resin, bisphenol A type (or AD type, S type, F type) glycidyl ether, water-added bisphenol A type glycidyl ether, and ethylene oxide adduct bisphenol.
  • epoxy resin examples include glycidyl ester of dimer acid, trifunctional (or tetrafunctional) glycidylamine, naphthalene resin glycidylamine and the like. These may be used alone or in combination of two or more.
  • the thermosetting resin composition 12 may contain an acrylate compound as the thermosetting resin.
  • the acrylate compound may have two or more (meth) acryloyl groups.
  • Examples of acrylate compounds include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, and trimethylolpropane triacrylate.
  • Trimethylol Propane Dimethacrylate Trimethylol Propanetrimethacrylate, 1,4-Butanediol Diacrylate, 1,6-Hexanediol Diacrylate, 1,4-Butanediol Dimethacrylate, 1,6-Hexanediol Dimethacrylate, Penta Ellislitol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, 2-hydroxyethylacrylate, 2-hydroxyethylmethacrylate, 1,3-acryloyloxy- Triacrylate of 2-hydroxypropane, 1,2-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide,
  • R 41 and R 42 each independently represent a hydrogen atom or a methyl group
  • f and g each independently represent an integer of 1 or more.
  • a radiation-polymerizable compound having a glycol skeleton as represented by the formula (13) can impart solvent resistance after curing.
  • Urethane acrylate, urethane methacrylate, isocyanuric acid-modified di / triacrylate and methacrylate can impart high adhesiveness after curing.
  • the thermosetting resin composition 12 is a thermosetting resin selected from a styrene-based elastomer, an olefin-based elastomer, a urethane-based elastomer, a polyester-based elastomer, a polyamide-based elastomer, an acrylic-based elastomer, and a silicone-based elastomer as the thermosetting resin. May include.
  • the thermosetting elastomer is composed of a hard segment component and a soft segment component. Generally, the hard segment component contributes to heat resistance and strength, and the soft segment component contributes to flexibility and toughness. These thermosetting elastomers can be used alone or in admixture of two or more.
  • thermosetting elastomer may be selected from styrene-based elastomers, olefin-based elastomers, polyamide-based elastomers, and silicone-based elastomers from the viewpoint of heat resistance and insulation reliability, and styrene-based elastomers and olefins from the viewpoint of dielectric properties. You may choose from system elastomers.
  • Thermosetting elastomer has a reactive functional group at the molecular end or in the molecular chain.
  • the reactive functional group include an epoxy group, a hydroxyl group, a carboxyl group, an amino group, an amide group, an isocyanato group, an acryloyl group, a methacryloyl group, a vinyl group, and a maleic anhydride group.
  • the reactive functional group of the thermosetting elastoma may be an epoxy group, an amino group, an acryloyl group, a methacryloyl group, a vinyl group, or a maleic anhydride group, and may be an epoxy group, from the viewpoint of compatibility and fibrinolysis.
  • thermosetting elastomer may be 10 to 70% by mass based on the mass of the thermosetting resin composition, and 20 to 60% by mass from the viewpoint of dielectric properties and compatibility of the varnish. May be good.
  • the thermosetting resin composition may contain a curing accelerator that promotes the curing reaction of the thermosetting resin, if necessary.
  • curing accelerators include peroxides, imidazole compounds, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These can be used alone or in combination of two or more.
  • the curing accelerator may be, for example, an imidazole compound.
  • the content of the curing accelerator may be 0.1 to 10% by mass based on the total mass of the components other than the inorganic filler in the thermosetting fat composition, and has a dielectric property and prepreg handling property. May be 0.5 to 5% by mass, or 0.75 to 3% by mass.
  • the thermosetting resin composition 12 may contain an adhesion aid.
  • adhesion aids include silane coupling agents, triazole compounds, and tetrazole compounds.
  • the silane coupling agent may be a compound having a nitrogen atom in order to improve the adhesion with a metal.
  • Examples of silane coupling agents are N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane.
  • 3-Aminopropyltriethoxysilane 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, Tris- (trimethoxysilylpropyl) Examples thereof include isocyanurate, 3-ureidopropyltrialkoxysilane, and 3-isocyanuppropyltriethoxysilane.
  • the content of the silane coupling agent is 0.1 to 20 mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12 from the viewpoint of the effect of addition, heat resistance, manufacturing cost and the like. May be%.
  • triazole compounds examples include 2- (2'-hydroxy-5'-methylphenyl) benzotriazole, 2- (2'-hydroxy-3'-tert-butyl-5'-methylphenyl) -5-chlorobenzo.
  • tetrazole compounds include 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 1-methyl-5-ethyl-1H-tetrazole, 1-methyl.
  • the content of the triazole compound and the tetrazole compound is 0.1 to 20 mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12 from the viewpoint of the effect of addition, heat resistance and manufacturing cost. May be%.
  • silane coupling agent the triazole compound, and the tetrazole compound may be used alone or in combination.
  • the thermosetting resin composition 12 may contain an ion scavenger.
  • an ion scavenger By adsorbing ionic impurities in the organic insulating layer with an ion scavenger, the insulation reliability at the time of moisture absorption can be improved.
  • ion trapping agents include triazine thiol compounds, compounds known as copper damage inhibitors for preventing copper from being ionized and dissolved out, such as phenol-based reducing agents, and bismuth-based, antimony-based, and magnesium-based compounds. , Aluminum-based, zirconium-based, calcium-based, titanium-based, tin-based, or a mixture thereof.
  • Examples of commercially available ion scavengers include inorganic ion scavengers manufactured by Toa Synthetic Co., Ltd. (trade names: IXE-300 (antimony), IXE-500 (bismuth), IXE-600 (antimony, bismuth mixed system). ), IXE-700 (magnesium / aluminum mixed system), IXE-800 (zylconyl system), and IXE-1100 (calcium system)). One of these may be used alone, or two or more thereof may be mixed and used.
  • the content of the ion scavenger is 0.01 to 10% by mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12 from the viewpoint of the effect of addition, heat resistance, manufacturing cost and the like. May be.
  • the thermosetting resin composition 12 may contain a filler in order to impart low hygroscopicity and low moisture permeability.
  • the filler may be an inorganic filler, an organic filler, or a combination thereof.
  • the inorganic filler can be added for the purpose of imparting thermal conductivity, low thermal expansion, low hygroscopicity, etc. to the insulating substrate.
  • the organic filler can be added for the purpose of imparting toughness or the like to the insulating substrate.
  • inorganic fillers are alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, crystalline silica, amorphous. Examples include silica, boron nitride, titania, glass, iron oxide, ceramics, and carbon.
  • organic fillers include rubber-based fillers. These inorganic fillers or organic fillers may be used alone or in combination of two or more.
  • the thermosetting resin composition 12 may contain a silica filler and / or an alumina filler.
  • the average particle size of the filler may be 10 ⁇ m or less or 5 ⁇ m or less.
  • the maximum particle size of the filler may be 30 ⁇ m or less, or 20 ⁇ m or less. If the average particle size exceeds 10 ⁇ m and the maximum particle size exceeds 30 ⁇ m, it tends to be difficult to obtain the effect of improving fracture toughness.
  • the lower limit of the average particle diameter and the maximum particle diameter is not particularly limited, but is usually 0.001 ⁇ m.
  • the filler may satisfy both an average particle diameter of 10 ⁇ m or less and a maximum particle diameter of 30 ⁇ m or less.
  • a filler having a maximum particle size of 30 ⁇ m or less but an average particle size of more than 10 ⁇ m tends to relatively reduce the adhesive strength.
  • a filler having an average particle size of 10 ⁇ m or less but a maximum particle size of more than 30 ⁇ m tends to increase the variation in adhesive strength.
  • the average particle size and the maximum particle size of the filler can be measured by, for example, using a scanning electron microscope (SEM) to measure the particle size of about one filler.
  • SEM scanning electron microscope
  • a cured product obtained by heat-curing a thermosetting resin composition may be produced, and the cross section of the central portion of the cured product may be observed by SEM.
  • the probability of existence of a filler having a particle diameter of 30 ⁇ m or less may be 80% or more of all the fillers.
  • the content of the filler (particularly the inorganic filler) may be, for example, 40 to 300% by mass based on the total mass of the components other than the filler in the thermosetting resin composition 12.
  • the thermosetting resin composition may contain an antioxidant for storage stability, prevention of electromigration, and prevention of corrosion of metal conductor circuits.
  • antioxidants include benzophenone-based, benzoate-based, hindered amine-based, benzotriazole-based, or phenol-based antioxidants.
  • the content of the antioxidant is 0.01 to 10% by mass based on the total mass of the components other than the inorganic filler in the thermosetting resin composition 12 from the viewpoint of the effect of addition, heat resistance, cost and the like. There may be.
  • the dielectric constant of the cured product of the thermosetting resin composition 12 at 10 GHz may be 3.0 or less, and may be 2.8 or less in that the reliability of the electric signal can be further improved.
  • the dielectric loss tangent of the cured product of the thermosetting resin composition 12 at 10 GHz may be 0.005 or less.
  • the dielectric constant can be measured using a test piece having a length of 60 mm, a width of 2 mm, and a thickness of 300 ⁇ m, which is a cured product of a thermosetting resin composition.
  • the test piece may be vacuum dried at 30 ° C. for 6 hours before measurement.
  • the dielectric loss tangent can be calculated from the resonance frequency obtained at 10 GHz and the no-load Q value.
  • the measuring device may be a vector type network analyzer E8364B manufactured by Keysight Technology, a Kanto Electronics application developable CP531 (10 GHz resonator) and a CPMAV2 (program).
  • the measurement temperature may be 25 ° C.
  • the glass transition temperature of the cured product formed by the thermosetting of the thermosetting resin composition 12 may be 120 ° C. or higher from the viewpoint of suppressing cracks during the temperature cycle, and the stress on the wiring can be relaxed. It may be 140 ° C. or higher.
  • the glass transition temperature of the cured product may be 240 ° C. or lower in terms of enabling laminating at a low temperature, and may be 220 ° C. or lower in terms of suppressing curing shrinkage.
  • the width of the prepreg 1 may be, for example, 200 to 1,300 mm.
  • the thickness of the prepreg 1 may be, for example, 15 to 300 ⁇ m. When the thickness of the prepreg 1 is less than 15 ⁇ m, the unevenness derived from the inorganic fiber base material 11 remains and the flatness tends to be relatively lowered. If the thickness of the prepreg 1 exceeds 300 ⁇ m, the warp tends to increase.
  • the prepreg 1 is obtained by a usual method, for example, a method including impregnating an inorganic fiber base material 11 with a resin varnish containing a thermosetting resin composition 12 and a solvent, and removing the solvent from the resin varnish. Can be done.
  • FIGS. 2 and 3 are cross-sectional views showing an embodiment of a method for manufacturing a substrate material for a semiconductor package.
  • the method shown in FIGS. 2 and 3 has a metal foil 3, two or more prepregs 1, and a metal foil 3, and the temperature of the laminated body 5 in which these are laminated in this order is added to the laminated body 5.
  • Two or more prepregs 1 are integrated by heating the laminate 5 at a temperature equal to or higher than the hot press temperature while pressing the laminate 5 in the thickness direction and the step of raising the laminate 5 to the hot press temperature.
  • the steps of forming the insulating substrate 10 formed by the above and the substrate material 100 for a semiconductor package having the metal foils 3 provided on both sides of the insulating substrate 10 are included in this order.
  • the laminate 5 In the step of raising the temperature of the laminate 5 to the hot press temperature while pressurizing the laminate 5, the laminate 5 is heated under the condition that the minimum melt viscosity of the prepreg 1 is 5000 Pa ⁇ s or less.
  • the substrate material 100 for a semiconductor package having a small variation in thickness can be easily manufactured.
  • the semiconductor package substrate material 100 it is possible to manufacture a semiconductor device for transmitting a high frequency signal, in which fine wiring is formed and chips having fine bumps are connected, with high reliability and productivity. ..
  • the obtained substrate material 100 for a semiconductor package is also excellent in terms of reducing warpage.
  • the laminate 5 may be heated under the condition that the minimum melt viscosity of the prepreg 1 is 1000 Pa ⁇ s or more and 5000 Pa ⁇ s or less. ..
  • the minimum melt viscosity of the prepreg 1 in the process of raising the temperature is 1000 Pa ⁇ s or more, the variation in the thickness of the substrate material 100 for a semiconductor package tends to be further reduced.
  • FIG. 4 is a graph showing an example of the measurement result of the melt viscosity of the prepreg.
  • FIG. 4 is a graph showing the relationship between the melt viscosity (Complex Viscosity) of the prepreg and the temperature, and the same prepreg is melted at a heating rate of 3 ° C./min, 4 ° C./min or 6 ° C./min. Shows viscosity. As illustrated in FIG.
  • the heating rate in the step of raising the laminate 5 to the hot press temperature while pressurizing it may be, for example, 2 ° C./min or more, 3 ° C./min or more, or 4 ° C./min or more, and 8 ° C./min or less. It may be 7 ° C./min or less, or 6 ° C./min or less.
  • the temperature of the laminated body 5 is raised to the hot press temperature, starting from a temperature in the range of, for example, 20 to 120 ° C. ..
  • the temperature at which the prepreg 1 exhibits the minimum melt viscosity may be 80 ° C. or higher or 120 ° C. or higher, 200 ° C. or lower, or 200 ° C. or lower. It may be 180 ° C. or lower.
  • the step of raising the temperature of the laminate 5 to the hot press temperature while pressurizing the laminate 5 is such that the temperature of the laminate 5 is higher than the hot press temperature within the range of ⁇ 20 ° C., which is the temperature at which the prepreg 1 shows the minimum melt viscosity. It may include raising to a low holding temperature, holding the laminate 5 at the holding temperature for 5 to 90 minutes, and raising the temperature of the laminate 5 from the holding temperature to the hot press temperature in this order. During these processes, the laminate 5 is usually continuously pressurized.
  • the substrate material 100 for a semiconductor package is formed by a hot press in which the laminate 5 whose temperature has risen to the hot press temperature is further heated and pressurized at a temperature equal to or higher than the hot press temperature.
  • the curing reaction of the thermosetting resin composition in the prepreg 1 proceeds during heating and pressurization at a temperature higher than the hot press temperature, and the insulating resin layer 12A and the insulating resin which are the cured products of the thermosetting resin composition proceed.
  • the insulating substrate 10 including the inorganic fiber base material 11 arranged in the layer 12A is formed.
  • the hot press temperature may be, for example, 100 to 250 ° C. or 150 to 300 ° C.
  • the heating and pressurizing time after the temperature rise may be, for example, 0.1 to 5 hours.
  • the substrate material 100 after heating and pressurization may be further heated if necessary.
  • the content of the insulating resin layer 12A in the insulating substrate 10 is substantially the same as the content of the thermosetting resin composition 12 in the prepreg 1, and is, for example, 40 to 80% by mass with respect to the insulating substrate 10 mass. You may.
  • the laminate 5 is continuously pressurized from the temperature rise to the heating and pressurization at the hot press temperature.
  • the pressure applied to the laminate 5 from the temperature rise to the heating and pressurization at the hot press temperature may be, for example, 0.2 to 10 MPa.
  • the metal leaf 3 is an alloy containing copper, gold, silver, nickel, platinum, molybdenum, ruthenium, aluminum, tungsten, iron, titanium, chromium, or at least one of these metal elements from the viewpoint of conductivity. It may be included.
  • the metal foil 3 may be a copper foil, an aluminum foil, or a copper foil.
  • the device for heating and pressurizing the laminate 5 may be, for example, a multi-stage press, a multi-stage vacuum press, continuous forming, or an autoclave forming machine.
  • the laminated body 5 is heated under the condition that the maximum value among the minimum melt viscosities indicated by two or more kinds of prepregs is 5000 P ⁇ s or less.
  • the laminated body to be heated and pressed is arranged on one or more prepregs having a minimum melt viscosity of 5000 Pa ⁇ s or less and both sides thereof. It may contain one or more prepregs having a minimum melt viscosity of 3000 Pa or less.
  • the width of the substrate material 100 for a semiconductor package may be 200 to 1,300 mm from the viewpoint of productivity.
  • the thickness of the substrate material 10 for a semiconductor package may be 200 to 1500 ⁇ m.
  • the substrate material 100 for a semiconductor package can have a thickness with little variation.
  • the standard deviation of the thickness of the substrate material for a semiconductor package may be 4 ⁇ m or less, 3.5 ⁇ m or less, 3 ⁇ m or less, 2.5 ⁇ m or less, or 2 ⁇ m or less, or 0.1 ⁇ m or more.
  • the standard deviation of the thickness of the substrate material 100 for a semiconductor package is a value calculated by the following formula from the thicknesses T 1 , T 2 , ..., T n of the substrate material 100 for a semiconductor package at any n positions. It may be ⁇ .
  • the position where the thickness of the substrate material 100 for a semiconductor package is measured is, for example, the entire main surface of the substrate material 100 for a semiconductor package divided into a plurality of regions having an area of 2500 mm 2 and one or more selected from each region. Can be done. The entire main surface of the substrate material 100 for a semiconductor package is divided so that the number of the plurality of regions having an area of 2500 mm 2 is maximized.
  • the thickness is measured, for example, using a micrometer.
  • the semiconductor package substrate material 100 can be used, for example, as a core material for forming a semiconductor package wiring board on which a semiconductor chip is mounted. By forming the wiring using the metal foil 3 of the substrate material 100 for the semiconductor package, it is possible to manufacture the wiring board for the semiconductor package having fine wiring.
  • the wiring board for a semiconductor package includes, for example, a method including forming wiring on a metal foil 3 by a subtractive method, or removing the metal foil 3 if necessary and then forming wiring by a semi-additive method. It can be obtained by the method. If necessary, a through hole may be formed through the insulating substrate 10 to form a conductive via to fill the through hole.
  • a semiconductor package is manufactured by mounting a semiconductor chip, memory, etc. at a predetermined position on a wiring board for a semiconductor package. Since the thickness of the wiring board for a semiconductor package obtained by using the substrate material for a semiconductor package according to the present embodiment is small, the yield of the process of mounting the semiconductor chip tends to be improved. In addition, a semiconductor chip having minute solder bumps can be more easily mounted on a wiring board.
  • a build-up layer may be formed on the wiring board for a semiconductor package.
  • wiring connected to the semiconductor chip can be formed on the build-up layer.
  • the method for forming the build-up layer is, for example, a subtractive method, a full additive method, a semi-additive method (SAP: Semi Adaptive Process), a modified semi-additive method (m-SAP: modified Semi Adaptive Process), or a trench method. May be good.
  • the trench method is a method including forming a build-up material or a photosensitive insulating material layer having a pattern including a groove on a wiring board, and filling the groove with a conductive material.
  • the conductive material formed outside the groove is removed by a method such as CMP or a fly-cut method.
  • the total concentration of the polyimide resin and the epoxy resin in the resin varnish was 65% by mass.
  • the obtained resin varnish is impregnated into a glass cloth (thickness 0.1 mm) formed of E glass fiber and dried by heating at 150 ° C. for 10 minutes to obtain a resin content (content of a thermosetting resin composition). Obtained 50% by mass of prepreg A.
  • Pre-preg B A prepreg B was produced in the same manner as the prepreg A except that the resin content was changed to 70% by mass.
  • Pre-preg C 10.3 g of 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 1,4-butanediol bis (3-aminopropyl) in a flask equipped with a stirrer, thermometer, and nitrogen replacement device.
  • ether trade name "B-12", manufactured by Tokyo Kasei
  • 101 g of N-methylpyrrolidone were added.
  • 20.5 g of 1,2- (ethylene) bis (trimeritate anhydride) was added.
  • a reflux condenser with a water receptor was attached to the flask.
  • the polyimide resin 2 was produced by raising the temperature of the reaction solution to 180 ° C. while blowing nitrogen gas, maintaining the temperature for 5 hours, and proceeding the reaction while removing water.
  • the polyimide resin solution was cooled to room temperature.
  • the total concentration of the polyimide resin and the epoxy resin in the resin varnish was 65% by mass.
  • the obtained resin varnish was impregnated into a glass cloth (thickness 0.1 mm) formed of E glass fiber, and dried by heating at 150 ° C. for 10 minutes to obtain prepreg C having a resin content of 50% by mass.
  • Pre-preg D A prepreg D was produced in the same manner as the prepreg C except that the resin content was changed to 70% by mass.
  • prepreg E was produced in the same manner as the prepreg A except that the resin content was changed to 35% by mass.
  • Pre-preg F An epoxy resin solution in which a polyimide solution containing polyimide resin 1 (polyimide content: 50 g) and 60 g of biphenyl aralkyl type epoxy resin (trade name "NC-3000-H", manufactured by Nippon Kayaku) are dissolved in propylene glycol monomethyl ether. , 1.5 g of curing accelerator (imidazole compound, trade name "2P4MZ", manufactured by Shikoku Kasei), silica slurry containing 50 g of silica filler (trade name "SC2050-KNK", manufactured by Admatex), and N- Methylpyrrolidone was mixed and the mixture was stirred for 30 minutes to give a resin varnish.
  • curing accelerator imidazole compound, trade name "2P4MZ”
  • silica slurry containing 50 g of silica filler trade name "SC2050-KNK", manufactured by Admatex
  • N- Methylpyrrolidone was mixed and the mixture was stir
  • the total concentration of the polyimide resin and the epoxy resin in the resin varnish was 65% by mass.
  • the obtained resin varnish was impregnated into a glass cloth (thickness 0.1 mm) formed of E glass fiber and dried by heating at 150 ° C. for 10 minutes to obtain prepreg F having a resin content of 50% by mass.
  • Condition A Temperature rise from 20 ° C to 250 ° C at a temperature rise rate of 4 ° C / min
  • Condition B Temperature rise from 20 ° C to 250 ° C at a temperature rise rate of 6 ° C / min The temperature at which prepreg A showed the lowest melt viscosity is The temperature was 135 ° C. under condition A and 145 ° C. under condition B.
  • the temperature of the press device was raised under the following conditions A, B or C, and then the laminate was heated and pressurized at 230 ° C. for 2 hours. Then, the end portion having a width of 25 mm along the four sides of the laminated body was cut off using a cut-and-sew to obtain a substrate material having a square main surface having a side of 200 mm.
  • Table 2 shows the combination of the prepreg and the heating conditions applied in each Example or Comparative Example.
  • Condition A Temperature rise from room temperature (about 25 ° C) to 230 ° C at a temperature rise rate of 4 ° C / min
  • Condition B Temperature rise from room temperature (about 25 ° C) to 230 ° C at a temperature rise rate of 6 ° C / min
  • the flatness (variation in thickness) of the substrate material, connectivity of solder bumps, fine wiring formability, and variation in wiring width were evaluated by the following methods. The evaluation results are shown in Table 2.
  • the minimum melt viscosity of the prepreg shown in Table 2 is the minimum melt viscosity measured under the temperature rise condition corresponding to the temperature rise condition adopted in each Example or Comparative Example.
  • the main surface of the substrate material is divided into 16 square areas with a side of 50 mm, and the thickness at a position 2 mm inward from the corners of the four corners of each area is measured using a micrometer (Mitutoyo, ID-C112X). did. The average value and standard deviation were calculated from the measured values of the thickness at a total of 64 locations.
  • a test substrate material having a square main surface with a side of 50 mm was cut out from the substrate material by dicing.
  • the substrate material was immersed in a sulfuric acid aqueous solution having a concentration of 10% by mass for 1 minute.
  • a flux agent SPARCLE FLUX WF-6317, manufactured by Senju Metal Industry Co., Ltd.
  • a semiconductor chip having a solder bump is placed on the surface of a substrate material coated with a flux agent, and heated in a reflow device (SNR-1065GT manufactured by Senju Metal Industry Co., Ltd.) in which the maximum temperature is set to 260 ° C. under a nitrogen atmosphere.
  • a semiconductor chip was mounted on the substrate material.
  • the semiconductor chip used here has a copper pillar having a diameter of 75 ⁇ m and a height of 45 ⁇ m and a solder bump (SnAg) having a height of 15 ⁇ m provided on the copper pillar, and has connection terminals arranged at a pitch of 150 ⁇ m.
  • the semiconductor chip has a square main surface having a side of 25 mm obtained by dicing a silicon wafer (manufactured by Waltz, FBW150-00SnAg01JY) having a thickness of 725 ⁇ m.
  • the substrate material and the chips mounted therein were cleaned using an ultrasonic cleaner at a frequency of 45 kHz and a cleaning time of 10 minutes to remove the flux agent, and then dried by heating at 100 ° C. for 30 minutes. .. Subsequently, an underfill was injected between the substrate material and the semiconductor chip on a hot plate heated to 110 ° C., and further heated at 150 ° C. for 2 hours to obtain a semiconductor package for evaluation.
  • the cross sections of the solder bumps located at the four corners of the semiconductor chip in the obtained semiconductor package were observed at 10 points each with a scanning electron microscope, and the connection between the solder bumps and the copper foil of the substrate material was confirmed. A total of 120 locations were observed for the three semiconductor packages manufactured by the same procedure. Among them, the ratio of the places where the connection between the solder bump and the copper foil of the substrate material was confirmed was calculated. When this ratio was 90% or more, it was determined as "A", and when this ratio was less than 90%, it was determined as "B".
  • Fine wiring formability A test substrate material having a square main surface with a side of 50 mm was cut out from the substrate material by dicing. The copper foil was removed from the substrate material by etching by immersing it in an aqueous solution of ammonium persulfate. A photosensitive insulating material (Hitachi Kasei, AR5100) was applied to the exposed insulating substrate with a slit coater, and the coating film was dried by heating at 120 ° C. for 1 minute, and then dried at 230 ° C. for 2 hours under a nitrogen atmosphere. Was cured by heating to form an insulating resin layer having a thickness of 5 ⁇ m.
  • a seed layer composed of a titanium layer (thickness 50 nm) and a copper layer (thickness 150 nm) was formed on the insulating resin layer by sputtering.
  • a photoresist (RY-5107UT) layer is formed on the seed layer, and a projection exposure device (Therma Precision Co., Ltd., S6Ck exposure machine) is used to cover a 70 mm square range of the photoresist with UV. Exposed.
  • the photoresist after exposure was developed by spraying a 1% by mass aqueous solution of sodium carbonate using a spin developer (ultra-high pressure spin developer manufactured by Blue Ocean Technology Co., Ltd.).
  • the exposed seed layer was washed at 23 ° C. for 30 seconds with an aqueous solution prepared by mixing a copper etching solution (manufactured by Mitsubishi Gas Chemical Company, WLC-C2) and pure water at a mass ratio of 1: 1. .. Subsequently, the titanium etching solution (manufactured by Mitsubishi Gas Chemical Company, WLC-T) and a 23% aqueous ammonia solution were immersed in an aqueous solution at 23 ° C. adjusted by a mass ratio of 50: 1 for 10 minutes. The copper layer and titanium layer were removed. By the above operation, 20 sets of wiring composed of 20 linear portions were formed. Of the total of 400 straight lines of the formed wiring, the ratio of the ones in which the fall was confirmed was calculated. When this ratio is 80% or more and 100% or less, it is "A”, when this ratio is 50% or more and less than 80%, it is "B”, and when this ratio is 0% or more and less than 50%. It was determined to be "C”.

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PCT/JP2020/035462 2020-09-18 2020-09-18 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料 Ceased WO2022059167A1 (ja)

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JP2022534621A JP7239065B2 (ja) 2020-09-18 2021-09-15 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料
US18/245,347 US20230331946A1 (en) 2020-09-18 2021-09-15 Method for manufacturing substrate material for semiconductor package, prepreg, and substrate material for semiconductor package
KR1020237009217A KR20230058428A (ko) 2020-09-18 2021-09-15 반도체 패키지용 기판 재료를 제조하는 방법, 프리프레그, 및 반도체 패키지용 기판 재료
PCT/JP2021/033973 WO2022059716A1 (ja) 2020-09-18 2021-09-15 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料
TW110134525A TWI918719B (zh) 2020-09-18 2021-09-16 製造半導體封裝用基板材料之方法、預浸體及半導體封裝用基板材料
JP2023031149A JP7764871B2 (ja) 2020-09-18 2023-03-01 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料

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WO2022059167A1 (ja) * 2020-09-18 2022-03-24 昭和電工マテリアルズ株式会社 半導体パッケージ用基板材料を製造する方法、プリプレグ、及び半導体パッケージ用基板材料
KR20240053065A (ko) * 2021-09-15 2024-04-23 가부시끼가이샤 레조낙 반도체 패키지용 기판 재료를 제조하는 방법, 프리프레그, 및 프리프레그의 응용
KR20250120288A (ko) * 2022-12-07 2025-08-08 가부시끼가이샤 레조낙 금속장 적층판, 프린트 배선판 및 반도체 패키지
JP7635894B2 (ja) * 2022-12-07 2025-02-26 株式会社レゾナック 金属張り積層板、プリント配線板及び半導体パッケージ
WO2025154213A1 (ja) * 2024-01-17 2025-07-24 株式会社レゾナック 半導体パッケージを製造する方法、半導体パッケージ用基板材料、及び半導体パッケージ用基板材料を製造する方法
WO2025154212A1 (ja) * 2024-01-17 2025-07-24 株式会社レゾナック 半導体パッケージ用基板及びその製造方法、配線基板、並びに半導体パッケージ

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