WO2022054817A1 - Composition de résine d'étanchéité et son procédé de production - Google Patents

Composition de résine d'étanchéité et son procédé de production Download PDF

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WO2022054817A1
WO2022054817A1 PCT/JP2021/032937 JP2021032937W WO2022054817A1 WO 2022054817 A1 WO2022054817 A1 WO 2022054817A1 JP 2021032937 W JP2021032937 W JP 2021032937W WO 2022054817 A1 WO2022054817 A1 WO 2022054817A1
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resin composition
sealing resin
composition
less
mass
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PCT/JP2021/032937
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English (en)
Japanese (ja)
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千佳 荒山
康成 冨田
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パナソニックＩｐマネジメント株式会社
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Priority to CN202180053481.0A priority Critical patent/CN116018370A/zh
Priority to JP2022547614A priority patent/JPWO2022054817A1/ja
Publication of WO2022054817A1 publication Critical patent/WO2022054817A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/20—Compounding polymers with additives, e.g. colouring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
    • C08K13/02—Organic and inorganic ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/10—Esters; Ether-esters
    • C08K5/101—Esters; Ether-esters of monocarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/5399—Phosphorus bound to nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape

Definitions

  • the present disclosure relates to a sealing resin composition and a method for producing the same, and more particularly to a sealing resin composition capable of rapid curing at a low temperature and a method for producing the same.
  • Patent Document 1 discloses an epoxy resin composition having excellent low-temperature curability.
  • This epoxy resin composition contains an epoxy resin, a curing agent, an inorganic filler, and a curing accelerator.
  • the content of the epoxy resin is 8% by mass or more and 20% by mass or less with respect to the total solid content of the epoxy resin composition, and the content of the imidazole-based curing accelerator is relative to the total solid content of the epoxy resin. It is 4.0% by mass or more and 12.0% by mass or less.
  • the epoxy resin composition has a maximum exothermic peak temperature of 80 ° C. in the DSC curve obtained when the temperature is raised from 30 ° C. to 200 ° C. under the condition of a temperature rise rate of 10 ° C./min using a differential scanning calorimeter. The temperature is 145 ° C or lower.
  • the melt viscosity becomes high due to the low temperature of the resin melting, and unfilling under the component occurs.
  • the continuous productivity may deteriorate due to poor curing.
  • the object of the present disclosure is to provide a sealing resin composition having good curability and filling property and excellent continuous productivity when molding for sealing at a low temperature, and a method for producing the same.
  • the sealing resin composition according to one aspect of the present disclosure is a sealing resin composition that can be rapidly cured at a temperature of 150 ° C. or lower.
  • T1 the time until the torque value measured while heating at a predetermined temperature reaches 0.0098 Nm
  • T2 the time until the torque value reaches 70% of the maximum value
  • T2 the equation (1) holds.
  • the shore D hardness (HS) of the cured product obtained by heating at the predetermined temperature for a time of 2.5 ⁇ T1 satisfies the formula (2).
  • the method for producing a sealing resin composition comprises the sealing resin composition containing an epoxy resin, a curing catalyst, a filler, a curing agent, and a low viscosity agent. It is a manufacturing method. It includes a primary mixing step of heat-kneading components other than the curing catalyst to prepare a kneaded product, and a secondary mixing step of mixing the curing catalyst with the kneaded product at 95 ° C. or lower.
  • FIG. 1 is a graph showing changes over time in measured torque values of the sealing resin composition according to the present embodiment.
  • FIG. 2 is a cross-sectional view showing an example of a semiconductor package using the sealing resin composition according to the present embodiment.
  • the semiconductor package can control the warp behavior that occurs during sealing by using a semiconductor encapsulation material with physical characteristics that match the package structure.
  • warpage behavior has been controlled by adjusting the molding shrinkage value of the semiconductor encapsulating material according to the structure such as the size of the semiconductor package and the chip size.
  • the solder ball is generally mounted by reflow processing, but in recent years, lead-free solder has been used, and the temperature of the reflow processing is used. Is mounted at a high temperature of 260 ° C. or higher.
  • SiP system-in-package
  • the warp of the package generated during encapsulation molding is large, so that mounting defects may occur during mounting reflow performed multiple times, or low-temperature solder may melt and flow out during molding. There are cases where it will be done.
  • the present inventors have developed a sealing resin composition that can be sealed by molding at a low temperature when producing a semiconductor package, and has excellent continuous moldability and filling property.
  • the sealing resin composition according to the present embodiment can be rapidly cured at a low temperature by satisfying the condition of the formula 1 represented by T2 ⁇ 2.5 ⁇ T1 at a temperature of 150 ° C. or lower.
  • T1 is the time until the torque value measured while heating the sealing resin composition at a predetermined temperature reaches 0.0098 Nm (0.1 kgf cm).
  • T2 is the time until the torque value measured while heating the sealing resin composition at a predetermined temperature reaches 70% of the maximum value.
  • the "predetermined temperature” is the molding temperature in the sealing molding to which the sealing resin composition according to the present embodiment is applied.
  • This molding temperature is a temperature of 150 ° C. or lower, for example, 130 ° C.
  • the "maximum value” means a value when the torque value measured while heating the sealing resin composition according to the present embodiment at a predetermined temperature does not increase. That is, as shown in FIG. 1, when the sealing resin composition is heated at a predetermined temperature, the torque value increases with the passage of time, but the increase in the torque value disappears and is constant. The value when the torque value of is reached is taken as the maximum value of the torque value. That is, when the sealing resin composition is heated at a predetermined temperature, the curing progresses with the passage of time, and the measured torque value becomes the maximum value. 70% of the maximum value can be calculated with the maximum value as 100%.
  • the shore D hardness (HS) of the cured product obtained by heating at the above-mentioned predetermined temperature for 2.5 ⁇ T1 is expressed by the formula 2 of 80 ⁇ HS.
  • the shore D hardness (HS) can be measured with a type D durometer, for example, in accordance with JIS K6253-3.
  • composition (X) the sealing resin composition according to the present embodiment (hereinafter, may be referred to as composition (X)) will be described in detail.
  • the composition (X) of the present embodiment is a sealing resin composition that can be rapidly cured at a temperature of 150 ° C. or lower.
  • T1 the time until the torque value measured while heating at a predetermined temperature reaches 0.0098 Nm
  • T2 the time until the torque value reaches 70% of the maximum value is set.
  • T2 the formula (1) is established, and the sealing resin composition is a cured product obtained by heating at the predetermined temperature for a time of 2.5 ⁇ T1 (HS).
  • the equation (2) is satisfied. Equation 1 is represented by T2 ⁇ 2.5 ⁇ T1. Equation 2 is represented by 80 ⁇ HS.
  • the above-mentioned predetermined temperature is a molding temperature when the resin composition (X) is used in sealing molding, for example, 130 ° C.
  • the torque value can be measured by, for example, a curast meter (registered trademark) VPS manufactured by JSR Trading Co., Ltd.
  • the shore D hardness HS is measured as follows. First, the composition (X) is injected into a mold heated to a temperature at which the formula (1) is established (that is, the above-mentioned "predetermined temperature") at an injection pressure of 6.9 MPa, and heat-treated for T2 hours. , A disk having a diameter of 50 mm and a thickness of 3 mm is formed. Subsequently, 10 seconds after being taken out from the mold, the shore D hardness HS of the disk, which is a semi-cured product of the molded composition (X), can be measured using an Asker rubber hardness tester D mold.
  • the coefficient of T1 is 2.5, but in a general sealing resin composition, the coefficient of T1 tends to be 3.0 or more.
  • the composition (X) having a T1 coefficient of 2.5 or less in the formula (1) has a heating time of 20% or more in molding as compared with the sealing resin composition having a T1 coefficient of 3.0 or more. Can be shortened. That is, the formula (1) can be an index for evaluating the quick-curing property of the sealing resin composition. Further, in the formula (1), T2 can be used as a heat treatment time during which the composition (X) can be taken out as a cured product when the composition (X) is molded.
  • T2 is a time that satisfies the condition of the formula (2) when the composition (X) is molded at a predetermined temperature. That is, if the formulas (1) and (2) are established at a low temperature, the heat treatment time (molding time) when molding the composition (X) at a low temperature can be shortened, and the composition (X) is continuously good. Easy to have formability. As described above, the composition (X) satisfying the formulas (1) and (2) can shorten the heat treatment time in molding and has good curability, even at a low temperature of 150 ° C. or lower. It can be cured quickly and tends to have good continuous moldability.
  • the melt viscosity of the composition (X) is suppressed to a low level during molding, it is easy to flow, and the filling property when sealing the semiconductor component is improved. Cheap.
  • the value of the slit viscosity defined as the pressure measured when the composition (X) flows is preferably 30 Pa ⁇ s or less.
  • the viscosity of the composition (X) at a low temperature is low and the flowability is good, and the composition (X) is suitably used as a mold underfill material.
  • the mold underfill material is a sealing material that fills the space under the component (the space between the substrate and the component) mounted on the surface of the substrate.
  • the slit viscosity is measured, for example, as follows. That is, using a molding machine (Single Pot Molding System manufactured by Daiichi Seiko Co., Ltd.), a slit having a thickness of 0.2 mm in a mold heated to a temperature satisfying the formulas (1) and (2) is sheared at a shear rate of 50 s. At -1, the pressure at which the composition (X) flows is measured.
  • a molding machine Single Pot Molding System manufactured by Daiichi Seiko Co., Ltd.
  • the value of the slit viscosity of the composition (X) is more preferably 20 Pa ⁇ s or less, and particularly preferably 15 Pa ⁇ s or less.
  • the slit viscosity value of the composition (X) is preferably 0.5 Pa ⁇ s or more.
  • the composition (X) is measured with the sealing resin composition after being stored at 20 ° C. for 24 hours, as opposed to the spiral flow measured with the sealing resin composition before being stored at 20 ° C. for 24 hours. It is preferable that the rate of change of the spiral flow is 30% or less. In this case, the storage stability of the composition (X) tends to be good. Based on ASTM D3123, it is possible to measure how much the composition (X) flows at a mold temperature of 130 ° C. and an injection pressure of 6.9 MPa, and use the length (cm) as a spiral flow. The rate of change of the spiral flow is more preferably 20% or less, and particularly preferably 15% or less.
  • composition of resin composition for encapsulation The above characteristics of the composition (X) can be achieved by the composition of the composition (X) described below. That is, the composition (X) preferably contains an epoxy resin (A), a curing catalyst (B), and a filler (C).
  • the epoxy resin (A) is preferably a compound having two or more epoxy groups in one molecule.
  • the epoxy resin (A) is, for example, a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, a biphenyl type epoxy compound, an o-cresol novolac type epoxy compound, a dicyclopentadiene type epoxy compound, a naphthalene ring-containing epoxy compound, an alicyclic type. It can contain at least one component of an epoxy compound, a brom-containing epoxy compound, and a hydrogenated product thereof.
  • the epoxy resin (A) is, for example, a solid at room temperature. In this case, the melting point of the epoxy resin (A) is preferably low.
  • the content ratio of the epoxy resin (A) is preferably 4% by mass or more and 35% by mass or less with respect to the total solid content of the composition (X).
  • the content ratio of the epoxy resin (A) is more preferably 4% by mass or more and 30% by mass or less, and preferably 4% by mass or more and 25% by mass or less, based on the total solid content of the composition (X). Especially preferable.
  • the curing catalyst (B) accelerates the curing of the epoxy resin (A).
  • the curing catalyst (B) preferably contains a latent catalyst containing phosphorus and a heterocyclic compound having a partial structure of amidine.
  • the latent catalyst is a curing catalyst in which curing is started by an external stimulus trigger such as heat or light.
  • the heterocyclic compound having a partial structure of amidine is a compound having a structure in which one carbon has one nitrogen atom in a double bond and one nitrogen atom in a single bond in a part of the heterocycle.
  • DBU diazabicycloundecene
  • DBN diazabicyclononene
  • imidazole pyrimidine
  • purine examples of the curing catalyst include amines, imidazole compounds, nitrogen-containing heterocyclic compounds, quaternary ammonium compounds, quaternary phosphonium compounds, and arsonium compounds in addition to the above two types.
  • the curing catalyst (B) is a latent catalyst containing phosphorus, a heterocyclic compound having a partial structure of amidine, and the composition (X) tends to have a low viscosity and has good curability at a low temperature. Easy to have. Therefore, the composition (X) tends to flow during molding, the filling property when sealing a semiconductor package or the like tends to be good, and the storage stability of the composition (X) tends to be improved.
  • the content ratio of the curing catalyst (B) is preferably 0.3% by mass or more and 1.0% by mass or less with respect to the total solid content of the composition (X).
  • the composition (X) tends to have good curability. Continuous formability is likely to improve.
  • the content ratio of the curing catalyst (B) is 1.0% by mass or less with respect to the total solid content of the composition (X)
  • the composition (X) tends to have a low melt viscosity and has fluidity. Is likely to be good, so that the filling property when sealing a semiconductor component is likely to be good.
  • the content ratio of the curing catalyst (B) is more preferably 0.3% by mass or more and 0.8% by mass or less, and 0.3% by mass or more and 0, based on the total solid content of the composition (X). It is particularly preferable that it is 6.6% by mass or less.
  • the filler (C) is, for example, silica such as molten silica, spherical molten silica, and crystalline silica; high dielectric constant filler such as aluminum oxide, magnesium oxide, boron nitride, aluminum nitride, high dielectric barium titanate, and titanium oxide; hard ferrite and the like.
  • Magnetic fillers; inorganic flame retardants such as magnesium hydroxide, aluminum hydroxide, antimony trioxide, antimony pentoxide, guanidine salts, zinc borate, molybdenum compounds, zinc tinate; talc; barium sulfate; calcium carbonate; and from mica flour.
  • the average particle size of the filler (C) is preferably 0.5 ⁇ m or more and 7.0 ⁇ m or less. In this case, the composition (X) tends to have good fluidity during molding.
  • the average particle size is a volume-based cumulative medium diameter (median diameter d50) based on the measured value of the particle size distribution by the laser diffraction / scattering method using a laser diffraction / scattering type particle size distribution measuring device. It is more preferable that the average particle size of the filler (C) is 1.0 ⁇ m or more and 6.5 ⁇ m or less, and particularly preferably 1.5 ⁇ m or more and 6.0 ⁇ m or less.
  • the filler (C) may contain two or more components having different average particle diameters in order to adjust the melt viscosity of the composition (X) at the time of molding, the physical properties of the encapsulant, and the like.
  • the content ratio of the filler (C) is preferably 60% by mass or more and 93% by mass or less with respect to the total solid content of the composition (X).
  • the content ratio of the filler (C) is more preferably 70% by mass or more and 93% by mass or less, and particularly preferably 80% by mass or more and 93% by mass or less, based on the total solid content of the composition (X).
  • the composition (X) may further contain a curing agent (D).
  • the curing agent (D) is used to cure the epoxy resin (A).
  • the curing agent (D) is a resin having a viscosity measured at 150 ° C. by a cone plate type viscometer of 9 mPa ⁇ s or more and 65 mPa ⁇ s or less, which is 50% by mass or more and 95% by mass with respect to the entire curing agent (D). It is preferable to include it in a ratio of% or less.
  • the composition (X) is molded when the proportion of the curing agent (D) containing the resin having a viscosity of 9 mPa ⁇ s or more and 65 mPa ⁇ s or less is 50% by mass or more with respect to the entire curing agent (D). Sometimes it tends to have good curability, and the continuous moldability of the composition (X) tends to be enhanced.
  • the composition (X) is molded when the proportion of the curing agent (D) containing the resin having a viscosity of 9 mPa ⁇ s or more and 65 mPa ⁇ s or less is 95% by mass or less with respect to the entire curing agent (D). Sometimes it is easy to have good fluidity, and it is easy to improve the filling property when sealing semiconductor parts.
  • the resin examples include phenolic resins.
  • the components other than the resin having a viscosity of 9 mPa ⁇ s or more and 65 mPa ⁇ s or less may contain one or more components selected from the group consisting of acid anhydrides and functional compounds that generate phenolic hydroxyl groups. preferable.
  • the proportion of the resin containing the resin having a viscosity of 9 mPa ⁇ s or more and 65 mPa ⁇ s or less is more preferably 30% by mass or more and 98% by mass or less, more preferably 40% by mass or more and 98% by mass or less, based on the entire curing agent (D). % Or less is particularly preferable.
  • the content ratio of the curing agent (D) is preferably 1.0% by mass or more and 10% by mass or less with respect to the total solid content of the composition (X).
  • the content ratio of the curing agent (D) is 1.0% by mass or more with respect to the total solid content of the composition (X)
  • the composition (X) tends to have good curability at the time of molding.
  • the continuous formability of the composition (X) is likely to be improved.
  • the content ratio of the curing agent (D) is 10.0% by mass or less with respect to the total solid content of the composition (X)
  • the composition (X) tends to have good fluidity at the time of molding.
  • the content ratio of the curing agent (D) is more preferably 2.0% by mass or more and 8.0% by mass or less, and 3.0% by mass or more and 5. It is particularly preferable that it is 0% by mass or less.
  • the composition (X) may further contain a low viscosity agent (E).
  • a low viscosity agent (E) When the composition (X) contains the low viscosity agent (E), the fluidity of the composition (X) is further improved, and the filling property when sealing the semiconductor device is likely to be improved.
  • the low viscosity agent (E) preferably contains at least one selected from the group consisting of a terminal phenol-modified silane coupling agent, a long-chain fatty acid ester, and cyclic phosphazene.
  • the affinity between the epoxy resin (A) and the filler (C) is improved, and the melt viscosity of the composition (X) is low. It is suppressed and tends to have good fluidity.
  • a long-chain fatty acid ester or cyclic phosphazene as the low-viscosity agent (E), these are melted to a sufficiently low viscosity at the molding temperature and act as a plasticizer, so that the composition (X) becomes more at the time of molding. It tends to have good fluidity.
  • the content ratio of the low viscosity agent (E) is preferably 0.1% by mass or more and 3.0% by mass or less with respect to the total solid content of the composition (X). In this case, the composition (X) tends to have good fluidity during molding.
  • the content ratio of the low viscosity agent (E) is more preferably 0.2% by mass or more and 2.0% by mass or less, still more preferably 0.3% by mass, based on the total solid content of the composition (X). It is 1.0% by mass or less.
  • composition (X) may contain components other than the above components as long as the effects of the present embodiment are not impaired.
  • components other than the above include pigments, ion trap materials, silane coupling agents and the like.
  • the pigment can contain, for example, at least one component selected from the group consisting of carbon black, red iron oxide, titanium oxide, phthalocyanine and perylene black.
  • the ion trap material is an ion exchanger, and can contain, for example, at least one of a magnesium-aluminum ion exchanger and a hydrotalcite ion exchanger.
  • the composition (X) can be produced by mixing the constituents of the composition (X) as described above. More specifically, for example, a raw material containing an epoxy resin (A), a curing catalyst (B), a filler (C), a curing agent (D), and a low viscosity agent (E) is sufficiently uniformed with a mixer, a blender, or the like. The mixture is mixed until it becomes, and then melt-mixed while being heated by a kneader such as a hot roll or a kneader, and then cooled to room temperature.
  • the powdery composition (X) can be produced by pulverizing the resulting mixture by a known means.
  • the composition (X) does not have to be in the form of powder, and may be in the form of a tablet, for example. It is preferable that the composition (X) in the form of a tablet has dimensions and mass suitable for molding conditions.
  • the method for producing the composition (X) includes a primary mixing step and a secondary mixing step.
  • the primary mixing step components other than the curing catalyst (B) are heat-kneaded to prepare a kneaded product.
  • the secondary mixing step the curing catalyst (B) is mixed with the kneaded product at 95 ° C. or lower.
  • the kneading temperature in the secondary mixing step is preferably 95 ° C. or lower.
  • the temporary mixture and the curing catalyst (B) can be sufficiently melted and dispersed, and the encapsulant can be produced without proceeding with the curing reaction.
  • the kneading temperature is more preferably in the range of 65 ° C. or higher and 95 ° C. or lower, and particularly preferably in the range of 80 ° C. or higher and 90 ° C. or lower.
  • the composition (X) is preferably solid at 25 ° C.
  • a sealing material can be produced by molding the composition (X) by a pressure molding method such as an injection molding method, a transfer molding method, or a compression molding method. It is more preferable if the composition (X) is solid at any temperature within the range of 15 ° C. or higher and 25 ° C. or lower, and particularly preferably if it is solid at any temperature within the range of 5 ° C. or higher and 35 ° C. or lower.
  • FIG. 2 shows an example of the semiconductor device 100.
  • the semiconductor device 100 is a system-in-package (SiP) of a double-sided mounting substrate (Double-sided FC substrate) in which a plurality of electronic components 11 such as semiconductor chips are mounted on both sides of the substrate 10 in the thickness direction.
  • Each of the electronic components 11 is electrically and mechanically connected to the circuit of the substrate 10 by a bump 12, a bonding wire 13, or a solder joint 14.
  • the substrate 10 and each electronic component 11 are sealed with a sealing material 16.
  • the encapsulant 16 is a cured product of the composition (X) according to the present embodiment.
  • the semiconductor device 100 is provided with an external bump 15 that can be mounted on another substrate or the like on the lower surface thereof.
  • the semiconductor device as described above is manufactured as follows, for example. That is, electronic components such as semiconductor chips are mounted on the first surface, which is one side of the substrate, and wire bonding or flip chip bonding is performed. Next, electronic components are mounted on the second surface, which is the surface opposite to the first surface of the substrate, and wire bonding and flip-chip bonding using bumps are performed. Then, the electronic component on the substrate is sealed with the composition (X).
  • the semiconductor element on the substrate is sealed, for example, by transfer molding. In this case, after the substrate on which the electronic component is mounted is placed in the cavity of the mold, the melted composition (X) is injected into the cavity at a predetermined pressure to fill the cavity.
  • the injection pressure at this time can be set, for example, 3 MPa or more and 10 MPa or less
  • the mold temperature can be set, for example, 120 ° C. or more and 150 ° C. or less
  • the molding time can be set, for example, 10 seconds or more and 60 seconds or less.
  • the above mold temperature is realized by the composition (X) satisfying the formulas (1) and (2) and having good curability and filling property at a low temperature.
  • a semiconductor device is manufactured by performing post-curing (post-curing) with the mold closed and then opening the mold to take out a molded product, that is, a semiconductor device.
  • composition (X) The method for producing the composition (X) in Formulations AD in Table 1 was carried out by a two-stage kneading having a primary mixing step and a secondary mixing step. First, the components other than the curing catalyst (B), that is, the epoxy resin (A), the filler (C), the curing agent (D), the low viscosity agent (E), and other components as necessary are blended. Then, the mixture was sufficiently uniformly mixed using a mixer, and then a primary mixing step of hot kneading was performed using a twin-screw kneader to obtain a mixture.
  • B the components other than the curing catalyst
  • the components other than the curing catalyst (B) that is, the epoxy resin (A), the filler (C), the curing agent (D), the low viscosity agent (E), and other components as necessary are blended. Then, the mixture was sufficiently uniformly mixed using a mixer, and then a primary mixing step of hot kneading was performed using
  • this mixture was cooled to room temperature, pulverized, a curing catalyst (B) was added, and a secondary mixing step of hot kneading was performed using a twin-screw kneader.
  • the temperature was adjusted so that the temperature of the material was within the range of 65 to 95 ° C. Then, the mixture obtained in the secondary mixing step was cooled to room temperature and then pulverized to obtain a composition (X).
  • Epoxy resin C Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, "YL6810", epoxy equivalent 165 to 180 g / eq.
  • Phenol resin A Biphenyl aralkyl-like epoxy "MEHC-7841-4S” manufactured by Meiwa Kasei Co., Ltd., OH equivalent 161 to 171 g / eq.
  • -Phenol resin B manufactured by Meiwa Kasei Co., Ltd., "DL-92” OH equivalent 103-109 g / eq. -Pigment: Mitsubishi Chemical Corporation, carbon black, "MA600", particle diameter 20 nm (arithmetic mean diameter).
  • -Ion trap material "IXE-700F” (Mg, Al system) manufactured by Toagosei Co., Ltd.
  • -Curing catalyst A Organophosphorus curing agent "RP-701” manufactured by Sun Appro Co., Ltd.
  • -Curing catalyst B manufactured by San-Apro Co., Ltd., 1,8-diazabicyclo (5,4,0) -Undesen-7, "SA851".
  • -Curing catalyst C "2P4MHZ-PW", an imidazole-based epoxy curing agent manufactured by Shikoku Chemicals Corporation.
  • -Silane coupling agent 3-mercaptopropyltrimethoxysilane, "KBM-803” manufactured by Shin-Etsu Chemical Co., Ltd.
  • -Low viscosity agent A N-phenyl-3 aminopropyltrimethoxysilane, "KBM-573” manufactured by Shin-Etsu Chemical Co., Ltd.
  • -Low viscosity agent B Organic phosphazene derivative, "Ravitor FP-100” manufactured by Fushimi Pharmaceutical Co., Ltd.
  • -Low viscosity agent C Long-chain fatty acid ester manufactured by Dainichi Chemical Industry Co., Ltd., "EPL-6".
  • T1 and T2 The torque value was measured while heating the composition (X) at 130 ° C. using a curast meter VPS type manufactured by JSR Trading Co., Ltd. The time required from the start of heating until the measured torque value reached 0.0098 (Nm) was defined as T1 (seconds), and the time required for the torque value to reach 70% from the maximum value was defined as T2 (seconds).
  • composition (X) is injected into a mold heated to 130 ° C. at an injection pressure of 6.9 MPa, and the thickness is 50 mm from the composition (X) in a predetermined curing time shown in Table 1.
  • a 3 mm disk was molded, and the shore D hardness of the molded product 10 seconds after being removed from the mold was measured using an Asker rubber hardness tester D mold.
  • Example 3 The compositions (X) were prepared in the blending amounts shown in Tables 2 to 4, and the above evaluation was performed. The results are shown in Tables 2-4. In Examples and Comparative Examples other than Example 8, the above two-stage kneading was performed.
  • the production of the sealing resin composition using the one-stage kneading method in which one-stage kneading was performed requires the above-mentioned thermosetting resin, curing agent, curing catalyst, inorganic filler, pigment, and necessary.
  • other components are mixed and mixed sufficiently uniformly using a mixer, blender, etc., and then melt-mixed in a heated state using a heat roll, kneader, or the like. Then, it can be produced by cooling it to room temperature and then pulverizing it.

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Abstract

La présente invention concerne une composition de résine d'étanchéité ayant des propriétés de durcissement et des propriétés de remplissage favorables et une excellente productivité en continu lors de la réalisation d'un moulage pour l'étanchéité à basse température. La présente invention concerne une composition de résine d'étanchéité qui est rapidement durcissable à une température d'au plus 150 ºC. Lorsque le temps jusqu'à ce que la valeur de couple de la composition de résine d'étanchéité mesurée en utilisant un rhéomètre tout en chauffant à une température prédéterminée atteint 0,0098 N∙m est défini comme T1, et le temps jusqu'à ce que la valeur de couple atteint 70 % de la valeur maximale est défini comme T2, l'expression (1) est satisfaite, et la dureté Shore D (HS) d'un produit durci obtenu par chauffage de la composition de résine d'étanchéité à une température prédéterminée pendant un temps de 2,5 x T1 satisfait l'expression (2). (Expression 1) T2 < 2,5 x T1 (Expression 2) 80 < HS
PCT/JP2021/032937 2020-09-14 2021-09-08 Composition de résine d'étanchéité et son procédé de production WO2022054817A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016050215A (ja) * 2014-08-28 2016-04-11 ナミックス株式会社 封止材組成物、それを用いた半導体装置
WO2018083885A1 (fr) * 2016-11-02 2018-05-11 住友ベークライト株式会社 Composition et structure de résine époxyde
JP2019506509A (ja) * 2016-02-11 2019-03-07 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 燃料電池用熱硬化性シーラント

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016050215A (ja) * 2014-08-28 2016-04-11 ナミックス株式会社 封止材組成物、それを用いた半導体装置
JP2019506509A (ja) * 2016-02-11 2019-03-07 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 燃料電池用熱硬化性シーラント
WO2018083885A1 (fr) * 2016-11-02 2018-05-11 住友ベークライト株式会社 Composition et structure de résine époxyde

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