WO2022047785A1 - 一种晶片承载盘 - Google Patents

一种晶片承载盘 Download PDF

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Publication number
WO2022047785A1
WO2022047785A1 PCT/CN2020/113763 CN2020113763W WO2022047785A1 WO 2022047785 A1 WO2022047785 A1 WO 2022047785A1 CN 2020113763 W CN2020113763 W CN 2020113763W WO 2022047785 A1 WO2022047785 A1 WO 2022047785A1
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Prior art keywords
groove
center
protruding structure
wafer carrier
edge
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Application number
PCT/CN2020/113763
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English (en)
French (fr)
Inventor
程凯
张丽旸
Original Assignee
苏州晶湛半导体有限公司
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Filing date
Publication date
Application filed by 苏州晶湛半导体有限公司 filed Critical 苏州晶湛半导体有限公司
Priority to PCT/CN2020/113763 priority Critical patent/WO2022047785A1/zh
Priority to CN202080103959.1A priority patent/CN116096939A/zh
Publication of WO2022047785A1 publication Critical patent/WO2022047785A1/zh
Priority to US18/074,419 priority patent/US20230098865A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Definitions

  • the present invention relates to a semiconductor manufacturing equipment, and relates to a wafer carrier for MOCVD.
  • Graphite disk is a very important accessory in MOCVD equipment.
  • the commonly used graphite disks are round, and some grooves are distributed on the graphite disk. These grooves are used to place the substrate, and then the epitaxial layer is grown on the substrate.
  • the graphite disc is made of high-purity graphite and coated with SiC on the surface.
  • the graphite disk containing the substrate is heated by radiation through the heating wire.
  • FIG. 1 is a schematic diagram of a conventional wafer carrier.
  • the wafer carrier 10 includes three grooves 20 , wherein a wafer 30 is placed in one of the grooves 20 .
  • Figure 2 shows a schematic view of the structure at the section A-A' in Figure 1, and the bottom of the groove is generally flat, convex, and concave.
  • the buffer layer needs to be grown by stress engineering technology, and the epitaxial wafer is convexly warped when the active region is grown. Therefore, for the light-emitting structure of GaN-on-silicon, convex grooves are generally used.
  • the problem of using the convex groove is: when the wafer 30 is in the groove 20, since the wafer carrier 10 rotates at a high speed during the growth of the wafer 30, the wafer 30 in the groove 20 is affected by centrifugal force, and the wafer 30 will be affected by centrifugal force. 30 moves in a direction away from the center C of the wafer carrier, and the protruding structure at the bottom of the groove will make the gap between the part of the wafer 30 far from the center C of the wafer carrier 10 and the bottom of the wafer carrier 10 is relatively large, that is, the wafer 30 will have a relatively large gap.
  • the distance between the 30 and the bottom of the groove 20 is quite different, resulting in a very obvious phenomenon of uneven heating during the growth of the wafer 30, which has an impact on the quality of the wafer 30, and the wavelength of the III-V nitride light-emitting wafer 30 is more sensitive to temperature. , it is easy to cause a large wavelength difference in the wafer 30 , which will greatly increase the time and cost and reduce the yield for the subsequent chip manufacturing process and sorting work.
  • the purpose of the present invention is to provide a wafer carrier that adjusts the shape of the bottom of the groove to effectively improve the uniformity of the epitaxial heating of the wafer, improves the quality and epitaxy of III-V nitride epitaxial growth, and the on-chip wavelength of the optoelectronic epitaxial wafer uniformity.
  • the present invention provides a wafer carrying tray, comprising at least one groove, and the groove includes:
  • the bottom of the groove divides the bottom of the groove into a first area close to the center of the wafer carrier and a second area away from the center of the wafer carrier by a first dividing line passing through the center of the groove.
  • the bottom of the groove includes a bottom surface of the groove and a protruding structure formed on the bottom surface of the groove. The point where the edge of the protruding structure is closest to the center of the wafer carrier is the first edge point. The point where the edge of the protruding structure is farthest from the center of the wafer carrier is the second edge point;
  • the average height of the protruding structures located in the second region is higher than the average height of the protruding structures located in the first region.
  • the groove further includes a side portion of the groove, and the edge of the protruding structure is connected to the side portion of the groove.
  • the first dividing line is a straight line, and the first dividing line is perpendicular to a first center line passing through the center of the crystal carrier plate and the center of the groove.
  • the first dividing line is a circular arc with the center of the crystal carrying plate as the center of the circle and the distance from the center of the crystal carrying plate to the center of the groove as the radius.
  • the surface of the protruding structure is a curved surface, the curved surface has a vertex, and the projection of the vertex on the horizontal plane is located in the second region at the bottom of the groove.
  • the projection of the vertex on the horizontal plane is located on the first center line.
  • the curved surface of the protruding structure is composed of countless curves starting from the vertex to the edge of the protruding structure, and the radius of curvature of each curve in the countless curves is a fixed value, wherein , the radius of curvature of the countless curves gradually decreases from the first edge point along the edge of the protruding structure to the second edge point.
  • the curved surface of the protruding structure is composed of innumerable curves passing through the vertex and both ends of which are located at the edge of the protruding structure, and one end of each of the curves is close to the center of the crystal carrier plate is the first end, and one end of each of the curves away from the center of the crystal carrier is the second end, wherein the radius of curvature of each of the curves gradually decreases from the first end to the second end.
  • the height of the edge of the protruding structure gradually increases from the first edge point to the second edge point along the edge of the protruding structure.
  • the slope of the tangent line from the second edge point to the vertex is a positive value, and from the vertex to the first edge point The slope of the tangent line between the curves changes from positive to negative.
  • the present invention has the following technical effects:
  • the groove bottom of the wafer carrier of the present invention divides the groove bottom into a first area close to the center of the wafer carrier and a second area away from the center of the wafer carrier by a first dividing line passing through the center of the groove.
  • the bottom includes a bottom surface of the groove and a protruding structure formed on the bottom surface of the groove.
  • the surface of the protruding structure is a curved surface, and the apex of the curved surface is located in the second area of the bottom of the groove. Therefore, the protruding structure located in the second area is The average height of is higher than the average height of the protruding structures located in the first region.
  • the design structure of the groove bottom of the wafer carrier can better match the problem of the large gap between the wafer and the groove bottom caused by the centrifugal force and the protruding structure of III-V nitride wafers, so that the wafers affected by the centrifugal force of the wafer carrier rotate Always maintain a reasonable gap with the wafer carrier, reduce the impact of centrifugal force on wafer growth, ensure stable temperature and airflow, and make the temperature field distribution more uniform, thereby improving the quality of epitaxial wafers and improving the wavelength uniformity of luminescent epitaxial wafers. Improving yield has broad application prospects in the field of semiconductor manufacturing equipment design and manufacturing.
  • FIG. 1 is a schematic diagram of a conventional wafer carrier
  • Fig. 2 is the structural representation at the section A-A' in Fig. 1;
  • FIG. 3 is a schematic top view of a wafer carrier in an embodiment of the present application.
  • 4a is a schematic diagram showing the position of the first dividing line at the bottom of the groove in the embodiment of the present invention.
  • 4b is a schematic diagram showing the position of the first dividing line at the bottom of the groove according to another embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a single groove in an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a single groove in another embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a single groove in another embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a single groove in yet another embodiment of the present invention.
  • Chip carrier tray 10 The center C of the chip carrier tray
  • the first edge point O1 The second edge point O2
  • the protruding structure 210 The first area S1
  • FIG. 3 is a schematic top view of the wafer carrier 10 according to an embodiment of the application.
  • the wafer carrier 10 includes at least one groove 20 , and the number of the grooves 20 in FIG. 3 is three.
  • the wafers are arranged in an orderly manner around the center C of the wafer carrier 10 .
  • the present application does not limit the number, size and distribution of the grooves of the wafer carrier 20 .
  • Those skilled in the art should know that the number, size and arrangement of the grooves 20 can be flexibly set according to the size of the wafer 30 .
  • the groove bottom of the groove 20 is divided into a first area S1 close to the center C of the wafer carrier and a second area S2 away from the center C of the wafer carrier with the first dividing line L1 as the boundary.
  • the bottom of the groove includes a bottom surface of the groove and a protruding structure 210 formed on the bottom surface of the groove.
  • the point where the edge of the protruding structure 210 is closest to the center C of the wafer carrier is the first edge point, and the protruding structure The point of the edge of 210 farthest from the center C of the wafer carrier is the second edge point.
  • the average height of the protruding structures 210 located in the second region S2 is higher than the average height of the protruding structures 210 located in the first region S1 .
  • the wafer 30 Due to the centrifugal force of the rotation of the wafer carrier 10, the wafer 30 will move in a direction away from the center C of the wafer carrier, and the protruding structure at the bottom of the groove will make the part of the wafer 30 away from the center C of the wafer carrier 10 and the wafer
  • the gap at the bottom of the carrier plate 10 is relatively large, that is, the distance between the wafer and the bottom of the groove 20 is relatively large.
  • the present invention adjusts the height of the protruding structure 210 at the bottom of the groove so that the protruding structure is far away from the center C of the wafer carrier plate.
  • the height of the part is appropriately increased, so that the wafer 30 subjected to the centrifugal force of the rotation of the wafer carrier plate always maintains a reasonable gap with the groove 20 of the wafer carrier plate 10, which reduces the influence of centrifugal force on the growth of the wafer, and ensures stable temperature and airflow. Make the temperature field distribution more uniform, thereby improving the quality of epitaxial wafers.
  • FIG. 4a and 4b are schematic diagrams of the position of the first dividing line at the bottom of the groove 20 in the embodiment of the present invention.
  • the first dividing line L1 is a straight line, and the first dividing line L1 is connected to the center C and the center of the crystal carrier plate.
  • the first center lines L2 of the groove center O are perpendicular to each other.
  • the first area S1 and the second area S2 are equal in area, wherein the first area S1 is close to the center C of the crystal carrier, and the second area S2 is far from the center C of the crystal carrier.
  • the first dividing line L1 is an arc with the center C of the crystal carrier as the center and the distance from the center C of the crystal carrier to the center O of the groove as the radius.
  • the first dividing line L1 divides the bottom of the groove into two parts with unequal areas, the first area S1 and the second area S2 are equal in area, wherein the first area S1 is close to the center C of the crystal carrier, and the second area S2 is far away from the crystal carrier. Center C.
  • the edge of the protruding structure 210 is in contact with the side of the groove 20 .
  • the surface of the protruding structure 210 is a curved surface, and the curved surface has a vertex H.
  • the groove 20 surrounds the vertex H
  • the surrounding curves can be regarded as contour lines. From the position distribution of the contour lines in FIG. 3 , it can be seen that the average height of the protruding structures 210 in the second region S2 is higher than the average height of the protruding structures 210 in the first region S1 .
  • the projection of the vertex H on the horizontal plane is located on the first center line L2 of the second region S2 at the bottom of the groove.
  • FIG. 5 is a schematic structural diagram of a single groove 20 in an embodiment.
  • the projection of the vertex H on the horizontal plane is located on the first center line L2 of the second area S2 at the bottom of the groove.
  • the curved surface of the protruding structure 210 is composed of innumerable curves starting from the vertex H to the edge of the protruding structure 210 , and the radius of curvature of each curve in the innumerable curves is a fixed value, wherein the innumerable curves The curvature radius of the curve gradually decreases from the first edge point along the edge of the protruding structure 210 to the second edge point. Five curves k1-k5 are shown in FIG. 5.
  • the curvature radii of the five curves k1-k5 are r1, r2, r3, r4 and r5, respectively, protruding from the first edge point O1 near the center C of the wafer carrier. From the edge of the structure 210 to the second edge point O2, it gradually becomes smaller, that is, r5 ⁇ r4 ⁇ r3 ⁇ r2 ⁇ r1.
  • FIG. 6 is a schematic structural diagram of a single groove 20 according to another embodiment of the present invention. It was mentioned in the previous embodiment that the surface of the protruding structure 210 is composed of countless curves passing through the vertex H. The curved surface of the structure 210 can also be considered to be composed of countless curves passing through the vertex H and both ends are located at the edges of the protruding structure 210. In FIG. And the projection of the above-mentioned countless curves passing through the vertex H on the horizontal plane is a straight line.
  • each of the curves close to the center C of the crystal carrier is the first end
  • the end of each of the curves away from the center C of the crystal carrier is the second end
  • each of the curves starts from The radius of curvature from the first end to the second end gradually decreases.
  • the point O1, the point A1 and the point B1 are the first ends of the curves O1O2, A1A2 and B1B2, and the points O2, A2 and B2 are the second ends of the curves O1O2, A1A2 and B1B2 , for curves O1O2, A1A2 and B1B2, the curvature radius of each curve extends from the first end to the second end is time-varying, and the curvature radius from the first end to the second end gradually decreases.
  • FIG. 7 is a schematic cross-sectional structure diagram of the groove 20 in another embodiment of the present invention. As shown in FIG. 7 , the height of the edge of the protruding structure 210 is from the first edge point O1 along the edge of the protruding structure 210 to The second edge point O2 gradually rises.
  • FIG. 8 is a schematic cross-sectional structure diagram of the groove 20 in another embodiment of the present invention.
  • the tangent slope of the curve is a positive value
  • the tangent slope of the curve from the vertex H to the first edge point O1 changes from a positive value to a negative value, that is, the curve from the vertex H to the first edge point O1 has an inflection point, so that The tangent slope of the curve before and after the inflection point changes from positive to negative.
  • the positive value of the tangent slope of the curve means that the curve is peak-shaped
  • the negative value of the curvature means that the curve is valley-shaped.
  • the height distribution of the protruding structure 210 at the bottom of the groove is adjusted by adjusting the position of the vertex H of the protruding structure 210 and the curvature radius of the curved surface in different regions, so that the protruding structure is far away from the center C of the wafer carrier.
  • the height of the part of the wafer is appropriately increased, so that the wafer 30 subjected to the centrifugal force of the rotation of the wafer carrier always maintains a reasonable gap with the groove 20 of the wafer carrier 10, which reduces the influence of centrifugal force on the growth of the wafer.
  • the bottom of the groove of the wafer carrier of the present invention is divided into a first area close to the center of the wafer carrier and a second area away from the center of the wafer carrier by the first dividing line passing through the center of the groove.
  • the bottom of the groove includes a bottom surface of the groove and a protruding structure formed on the bottom surface of the groove, the surface of the protruding structure is a curved surface, and the apex of the curved surface is located in the second region of the bottom of the groove, so it is located in the second region.
  • the average height of the protruding structures in the region is higher than the average height of the protruding structures in the first region.
  • the design structure of the groove bottom of the wafer carrier can better match the warpage of the III-V nitride wafer, so that the wafer subjected to the centrifugal force of the wafer carrier rotation always maintains a reasonable gap between the wafer carrier and the wafer carrier, reducing the impact of centrifugal force.
  • the influence of wafer growth ensures stable temperature and airflow, and makes the temperature field distribution more uniform, thereby improving the quality of epitaxial wafers, improving the wavelength uniformity of light-emitting epitaxial wafers, and improving yield. It has a wide range of application prospects in the field of semiconductor manufacturing equipment design and manufacturing. .
  • the material of the wafer carrier can be graphite.
  • the present application does not specifically limit the material of the wafer carrier, and those skilled in the art know that other materials can be selected according to design requirements.
  • the above descriptions are only preferred embodiments of the present application, and are not intended to limit the present application.
  • the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

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Abstract

一种晶片承载盘(10)，晶片承载盘(10)的凹槽底部以经过凹槽中心(O)的第一分界线(L1)将凹槽底部分为靠近所述晶片承载盘中心(C)的第一区域(S1)和远离晶片承载盘中心(C)的第二区域(S2)，凹槽底部包括凹槽底面以及形成在凹槽底面上的凸出结构(210)，凸出结构(210)的表面为曲面，曲面顶点(H)位于凹槽底部的所述第二区域(S2)，位于第二区域(S2)的凸出结构的平均高度高于位于第一区域的所述凸出结构的平均高度。晶片承载盘(10)凹槽底部的设计结构能较好匹配III-V族氮化物晶片有源区外延过程中的翘曲，使温场分布更均匀，从而提升提高发光外延片的波长均匀性。

Description

一种晶片承载盘 技术领域
本发明涉及一种半导体制造设备，涉及一种用于MOCVD的晶片承载盘。
背景技术
石墨盘是MOCVD设备中非常重要的配件，目前常用的石墨盘都是圆形，在石墨盘上分布有一些凹槽，这些凹槽用于放置衬底，随后在衬底上生长外延层。石墨盘是由高纯石墨制成，并在表面镀有SiC涂层。外延生长过程，在MOCVD的反应腔中，通过加热丝对盛放有衬底的石墨盘进行辐射加热。
图1所示为现有的晶片承载盘的示意图，晶片承载盘10包括3个凹槽20，其中1个凹槽20中放置了晶片30。图2所示为图1中A-A’截面处的结构示意图，凹槽的底部一般为平、凸、凹三种。针对硅上氮化镓工艺，需要采用应力工程技术生长缓冲层，在生长有源区时，外延片呈凸型翘曲。所以对于硅上GaN的发光结构，一般采用凸型凹槽。但是使用凸型凹槽会存在的问题为:晶片30至于凹槽20中时，由于晶片30生长过程中，晶片承载盘10高速旋转，凹槽20内的晶片30受离心力的影响，会把晶片30向远离晶片承载盘中心C的方向移动，而凹槽底部的凸出结构，会使得晶片30其远离晶片承载盘10中心C的部分与晶片承载盘10底部的间隙相对较大，即导致晶片30与凹槽20的底部的距离差异较大，造成晶片30生长过程中受热不均匀现象非常明显，对晶片30的质量有影响，并且III-V族氮 化物发光晶片30的波长对温度较为敏感，容易造成晶片30内波长差异较大，会对后续的芯片制程以及分选工作造成时间和成本的大幅增加及良率的降低。
基于以上所述，提供一种可以有效提高晶片外延受热均匀性的用于MOCVD设备中的晶片承载盘结构实属必要。
发明内容
本发明的目的在于提供一种调整凹槽的底部的形状以有效提高晶片外延受热均匀性的晶片承载盘，改善III-V族氮化物外延生长的品质与外延、以及光电外延片的片内波长均匀性。
本发明提供一种晶片承载盘，包括至少一个凹槽，所述凹槽包括：
凹槽底部，所述凹槽底部以经过所述凹槽中心的第一分界线将所述凹槽底部分为靠近所述晶片承载盘中心的第一区域和远离所述晶片承载盘中心的第二区域，所述凹槽底部包括凹槽底面以及形成在所述凹槽底面上的凸出结构，所述凸出结构的边缘最接近所述晶片承载盘中心的点为第一边缘点，所述凸出结构的边缘最远离所述晶片承载盘中心的点为第二边缘点；
其中，位于所述第二区域的所述凸出结构的平均高度高于位于所述第一区域的所述凸出结构的平均高度。
作为可选的技术方案，所述凹槽还包括凹槽侧部，所述凸出结构的边缘与所述凹槽的侧部相接。
作为可选的技术方案，所述第一分界线为直线，所述第一分界线与经过所述晶体承载盘中心和所述凹槽中心的第一中心线相互垂直。
作为可选的技术方案，所述第一分界线为以所述晶体承载盘中心为圆心且以所述晶体承载盘中心至所述凹槽中心的距离为半径的圆弧。
作为可选的技术方案，所述凸出结构的表面为曲面，所述曲面具有一个顶点，所述顶点在水平面上的投影位于所述凹槽底部的所述第二区域。
作为可选的技术方案，所述顶点在水平面上的投影位于第一中心线上。
作为可选的技术方案，所述凸出结构的曲面为无数从所述顶点出发至所述凸出结构的边缘的曲线组成，所述无数曲线中每一条曲线的曲率半径均为固定值，其中，所述无数曲线的曲率半径从所述第一边缘点沿着所述凸出结构边缘至所述第二边缘点逐渐变小。
作为可选的技术方案，所述凸出结构的曲面为无数经过所述顶点且两端位于所述凸出结构的边缘的曲线组成，每一所述曲线中靠近所述晶体承载盘中心的一端为第一端，每一所述曲线中远离所述晶体承载盘中心的一端为第二端，其中，每一所述曲线从所述第一端至所述第二端曲率半径逐渐变小。
作为可选的技术方案，所述凸出结构边缘高度从所述第一边缘点沿着所述凸出结构边缘至所述第二边缘点逐渐升高。
作为可选的技术方案，在所述凸出结构的曲面上，从所述第二边缘点至所述顶点之间的曲线的切线斜率为正值，从所述顶点至所述第一边缘点之间的曲线的切线斜率由正值变负值。
与现有技术相比，本发明具有以下技术效果：
本发明的晶片承载盘的凹槽底部以经过凹槽中心的第一分界线将凹槽底部分为靠近所述晶片承载盘中心的第一区域和远离晶片承载盘中心的第二区域，凹槽底部包括凹槽底面以及形成在凹槽底面上的凸出结构，所述凸出结构的表面为曲面，曲面顶点位于凹槽底部的所述第二区域，因此，位于第二区域的凸出结构的平均高度高于位于第一区域的所述凸出结构的平均高度。晶片承载盘凹槽底部的设计结构能较好匹配III-V族氮化物晶片因为离心力以及凸出结构而导致的晶片与凹槽底部间隙较大的问题，使受晶片承载盘转动离心力作用的晶片始终保持与晶片承载盘间存在合理的间隙，降低了离心力对晶片生长的影响，保证温度与气流稳定，使温场分布更均匀，从而提升外延层晶片质量，提高发光外延片的波长均匀性，提高良率，在半导体制造设备设计制造领域具有广泛的应用前景。
为使本申请的上述和其他目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合附图，作详细说明如下。
附图说明
图1所示为现有的晶片承载盘的示意图；
图2所示为图1中A-A’截面处的结构示意图；
图3所示为本申请一实施例中的晶片承载盘的俯视示意图；
图4a所示为本发明实施例中第一分界线在凹槽底部的位置示意图；
图4b所示为本发明另一实施例第一分界线在凹槽底部的位置示意图；
图5所示为本发明一实施例中单个凹槽的结构示意图；
图6所示为本发明另一实施例中单个凹槽的结构示意图；
图7所示为本发明又一实施例中单个凹槽的结构示意图；
图8所示为本发明再一实施例中单个凹槽的结构示意图；
为方便理解本发明，以下列出本发明中出现的所有附图标记：
晶片承载盘10                  晶片承载盘中心C
凹槽20                        凹槽中心O
第一边缘点O1                  第二边缘点O2
凸出结构210                   第一区域S1
曲线k1、k2、k3、k4以及k5      第二区域S2
曲线O1O2、A1A2以及B1B2        第一分界线L1
曲率半径r1、r2、r3、r4以及r5  第一中心线L2
凸出结构顶点H
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整的描述。
图3所示为本申请一实施例中的晶片承载盘10的俯视示意图，如图3以所示，晶片承载盘10包括至少一个凹槽20，图3中凹槽20的数目为3个，围绕着晶片承载盘10的中心C有序排列，然而本申请对晶片承载盘20的凹槽个数、大小及分布都不作限制。本领域人员应当知晓，可以根据晶片30的大小，灵活设置凹槽20的数量、大小和排布。凹槽20的凹槽底部以第一分界线L1为界将凹槽底部分为靠近晶片承载盘中心C的第一区域S1和远离晶片承载盘中心C的第二区域S2。凹槽底部包括凹槽底面以及形成在凹槽底面上 的凸出结构210，所述凸出结构210的边缘最接近所述晶片承载盘中心C的点为第一边缘点，所述凸出结构210的边缘最远离所述晶片承载盘中心C的点为第二边缘点。位于所述第二区域S2的所述凸出结构210的平均高度高于位于所述第一区域S1的所述凸出结构210的平均高度。
由于晶片承载盘10转动离心力的作用，会把晶片30向远离晶片承载盘中心C的方向移动，而凹槽底部的凸出结构，会使得晶片30其远离晶片承载盘10中心C的部分与晶片承载盘10底部的间隙相对较大，即导致晶片与凹槽20的底部的距离差异较大，本发明通过调整凹槽底部凸出结构210的高度，使得凸出结构远离晶片承载盘中心C的部分的高度适当增大，使受晶片承载盘转动离心力作用的晶片30始终保持与晶片承载盘间10的凹槽20存在合理的间隙，降低了离心力对晶片生长的影响，保证温度与气流稳定，使温场分布更均匀，从而提升外延层晶片质量。
图4a以及图4b为本发明实施例中第一分界线在凹槽20底部位置示意图，如图4a所示，第一分界线L1为直线，第一分界线L1与经过晶体承载盘中心C和凹槽中心O的第一中心线L2相互垂直。第一区域S1和第二区域S2面积相等，其中第一区域S1靠近晶体承载盘中心C，第二区域S2远离晶体承载盘中心C。在另一实施例中，如4b所示，第一分界线L1为以晶体承载盘中心C为圆心且以晶体承载盘中心C至凹槽中心O的距离为半径的圆弧，圆弧型的第一分界线L1将凹槽底部分成两个面积不相等的部分，第一区域S1和第二区域S2面积相等，其中第一区域S1靠近晶体承载盘中心C，第二区域S2远离晶体承载盘中心C。
如图3所示，凸出结构210的边缘与凹槽20的侧部相接，凸出结构210的表面为曲面，曲面具有一个顶点H，图3俯视图中凹槽20内的围绕着顶点H周围的曲线，可视为等高线，从图3中等高线位置分布可以看出凸出结构210的在第二区域S2的平均高度高于凸出结构210在第一区域S1的平均高度。顶点H在水平面上的投影位于凹槽底部的第二区域S2的第一中心线L2上。
图5为一实施例中单个凹槽20的结构示意图，如图5所示，顶点H在水平面上的投影位于凹槽底部的第二区域S2的第一中心线L2上。所述凸出结构210的曲面为无数从所述顶点H出发至所述凸出结构210的边缘的曲线组成，所述无数曲线中每一条曲线的曲率半径均为固定值，其中，所述无数曲线的曲率半径从所述第一边缘点沿着所述凸出结构210边缘至所述第二边缘点逐渐变小。图5中示出了k1-k5五条曲线，k1-k5五条曲线的曲率半径分别为r1、r2、r3、r4以及r5，分别从靠近晶片承载盘中心C的第一边缘点O1沿着凸出结构210边缘至第二边缘点O2逐渐变小，即r5＜r4＜r3＜r2＜r1。
图6为本发明另一实施例单个凹槽20的结构示意图，上个实施例提到凸出结构210的表面有无数经过顶点H的曲线组成，相较而言，本实施例中，凸出结构210的曲面也可视为无数经过所述顶点H且两端位于所述凸出结构210的边缘的曲线组成，图6中示例性的画出O1O2、A1A2以及B1B2三条经过顶点H的曲线，且上述无数条经过顶点H的曲线在水平面上的投影为直线。每一所述曲线中靠近所述晶体承载盘中心C的一端为第一端，每一所述曲线中远离所述晶体承载盘中心C的一端为第二端，其中，每一所述曲线从所述第一端至所述第二端曲率半径逐渐变小。具体的，如图6所述，点O1、点A1以及点B1均为曲线O1O2、A1A2以及B1B2的第一端，点O2、点A2以 及点B2均为曲线O1O2、A1A2以及B1B2的第二端，对于曲线的O1O2、A1A2以及B1B2而言，每一条的曲线的曲率半径从第一端延伸至第二端均为时刻变化的，第一端至所述第二端曲率半径逐渐变小。
在一实施例中，图7为本发明另一实施例中凹槽20的截面结构示意图，如图7所示，凸出结构210边缘高度从第一边缘点O1沿着凸出结构210边缘至第二边缘点O2逐渐升高。
在一实施例中，图8位本发明又一实施例中凹槽20的截面结构示意图，如图8所示，在凸出结构210的曲面上，从第二边缘点O2至顶点H之间的曲线的切线斜率为正值，从顶点H至第一边缘点O1之间的曲线的切线斜率由正值变负值，即从顶点H至第一边缘点O1之间的曲线存在拐点，使得拐点前后曲线的切线斜率由正值变为负值。其中，曲线的切线斜率为正值的含义为曲线为山峰状，曲率为负值的含义为曲线为山谷状。
本发明上述实施例，通过调整凸出结构210的顶点H位置以及曲面在不同区域的曲率半径，以调整凸出结构210在凹槽底部的高度分布，从而使得凸出结构远离晶片承载盘中心C的部分的高度适当增大，使受晶片承载盘转动离心力作用的晶片30始终保持与晶片承载盘间10的凹槽20存在合理的间隙，降低了离心力对晶片生长的影响。
综上所述，本发明的晶片承载盘的凹槽底部以经过凹槽中心的第一分界线将凹槽底部分为靠近所述晶片承载盘中心的第一区域和远离晶片承载盘中心的第二区域，凹槽底部包括凹槽底面以及形成在凹槽底面上的凸出结构，所述凸出结构的表面为曲面，曲面顶点位于凹槽底部的所述第二区域，因此，位于第二区域的凸出结构的平均高度高于位于第一区域的所述 凸出结构的平均高度。晶片承载盘凹槽底部的设计结构能较好匹配III-V族氮化物晶片的翘曲，使受晶片承载盘转动离心力作用的晶片始终保持与晶片承载盘间存在合理的间隙，降低了离心力对晶片生长的影响，保证温度与气流稳定，使温场分布更均匀，从而提升外延层晶片质量，提高发光外延片的波长均匀性，提高良率，在半导体制造设备设计制造领域具有广泛的应用前景。
本申请中，晶片承载盘的材料可为石墨。然而本申请对晶片承载盘的材料不作特别限制，本领域人员知晓，可根据设计需求选择其他的材料。以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (10)

  1. 一种晶片承载盘，包括至少一个凹槽，其特征在于，所述凹槽包括：
    凹槽底部，所述凹槽底部以经过所述凹槽中心的第一分界线将所述凹槽底部分为靠近所述晶片承载盘中心的第一区域和远离所述晶片承载盘中心的第二区域，所述凹槽底部包括凹槽底面以及形成在所述凹槽底面上的凸出结构，所述凸出结构的边缘最接近所述晶片承载盘中心的点为第一边缘点，所述凸出结构的边缘最远离所述晶片承载盘中心的点为第二边缘点；
    其中，位于所述第二区域的所述凸出结构的平均高度高于位于所述第一区域的所述凸出结构的平均高度。
  2. 根据权利要求1所示的晶片承载盘，其特征在于：所述凹槽还包括凹槽侧部，所述凸出结构的边缘与所述凹槽侧部相接。
  3. 根据权利要求2所示的晶片承载盘，其特征在于：所述第一分界线为直线，所述第一分界线与经过所述晶体承载盘中心和所述凹槽中心的第一中心线相互垂直。
  4. 根据权利要求2所示的晶片承载盘，其特征在于：所述第一分界线为以所述晶体承载盘中心为圆心且以所述晶体承载盘中心至所述凹槽中心的距离为半径的圆弧。
  5. 根据权利要求2所示的晶片承载盘，其特征在于：所述凸出结构的表面为曲面，所述曲面具有一个顶点，所述顶点在水平面上的投影位于所述凹槽底部的所述第二区域。
  6. 根据权利要求5所示的晶片承载盘，其特征在于：所述顶点在水平面上的投影位于第一中心线上。
  7. 根据权利要求6所示的晶片承载盘，其特征在于：所述凸出结构的曲面为无数从所述顶点出发至所述凸出结构的边缘的曲线组成，所述无数曲线中每一条曲线的曲率半径均为固定值，其中，所述无数曲线的曲率半径从所述第一边缘点沿着所述凸出结构边缘至所述第二边缘点逐渐变小。
  8. 根据权利要求6所示的晶片承载盘，其特征在于：所述凸出结构的曲面为无数经过所述顶点且两端位于所述凸出结构的边缘的曲线组成，每一所述曲线中靠近所述晶体承载盘中心的一端为第一端，每一所述曲线中远离所述晶体承载盘中心的一端为第二端，其中，每一所述曲线从所述第一端至所述第二端曲率半径逐渐变小。
  9. 根据权利要求6所示的晶片承载盘，其特征在于：所述凸出结构边缘高度从所述第一边缘点沿着所述凸出结构边缘至所述第二边缘点逐渐升高。
  10. 根据权利要求6所示的晶片承载盘，其特征在于：在所述凸出结构的曲面上，从所述第二边缘点至所述顶点之间的曲线的切线斜率为正值，从所述顶点至所述第一边缘点之间的曲线的切线斜率由正值变负值。
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