WO2022044756A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
WO2022044756A1
WO2022044756A1 PCT/JP2021/029102 JP2021029102W WO2022044756A1 WO 2022044756 A1 WO2022044756 A1 WO 2022044756A1 JP 2021029102 W JP2021029102 W JP 2021029102W WO 2022044756 A1 WO2022044756 A1 WO 2022044756A1
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WO
WIPO (PCT)
Prior art keywords
gas
substrate
processing apparatus
substrate processing
liquid nozzle
Prior art date
Application number
PCT/JP2021/029102
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English (en)
French (fr)
Japanese (ja)
Inventor
秀一 柴田
章 堀越
美佳 上野
弥生 竹市
隆明 柳田
健二 中西
茂 高辻
貴弘 木村
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2022044756A1 publication Critical patent/WO2022044756A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches

Definitions

  • This application relates to a substrate processing device.
  • Patent Document 1 a substrate processing device for removing a resist formed on the main surface of a substrate has been proposed (for example, Patent Document 1).
  • Patent Document 1 a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied to the main surface of the substrate. When sulfuric acid and hydrogen peroxide solution are mixed, they react to produce caroic acid. This caroic acid can efficiently remove the resist on the substrate.
  • the substrate processing apparatus it is conceivable to provide a nozzle for supplying the processing liquid to the main surface of the substrate and a unit for supplying the active species to the main surface of the substrate.
  • the active species can be supplied to the treatment liquid that has landed on the main surface of the substrate. Therefore, the active species can act on the treatment liquid on the main surface of the substrate to improve the treatment capacity of the treatment liquid.
  • the main surface of the substrate can be efficiently processed with high processing capacity.
  • a first aspect of the substrate processing apparatus is a substrate holding portion that rotates the substrate around a rotation axis passing through a central portion of the substrate while holding the substrate, and a main substrate held by the substrate holding portion.
  • a processing liquid nozzle that discharges the processing liquid toward the surface, a plasma generation unit provided at a position adjacent to the processing liquid nozzle in a plan view along the rotation axis, and integrally connected to the processing liquid nozzle, and a head.
  • the plasma generation unit includes a unit main body that forms a gas flow path through which gas flows, and an electrode group having a plurality of electrodes provided on the downstream side of the gas flow path, and the plasma generation unit includes the electrode group.
  • the gas via the electric field space for plasma formed by is supplied to the main surface of the substrate held by the substrate holding portion, and the head moving mechanism causes the processing liquid nozzle and the plasma generation unit.
  • the substrate is integrally reciprocated in the moving direction along the main surface of the substrate held by the substrate holding portion.
  • the second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, in which the plurality of electrodes are provided side by side at intervals in a plan view.
  • the third aspect of the substrate processing apparatus is the substrate processing apparatus according to the first or second aspect, and the electrode group is provided at a position adjacent to the processing liquid nozzle in the moving direction.
  • the fourth aspect of the substrate processing apparatus is the substrate processing apparatus according to the third aspect, and the electrode group is provided on both sides of the processing liquid nozzle in the moving direction.
  • a fifth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, further comprising a dielectric partition member provided between the plurality of electrodes.
  • the sixth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, and the width of the outlet of the gas flow path in the direction orthogonal to the moving direction is the said. It is larger than the diameter of the substrate.
  • a seventh aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the unit main body divides the gas flow path into a plurality of gases in a horizontal partition direction. Includes a flow path partition that partitions the flow path.
  • the eighth aspect of the substrate processing apparatus is the substrate processing apparatus according to the seventh aspect, wherein the gas supply unit for supplying the gas to the gas flow path is provided, and the plurality of gas split flow paths are the first.
  • the distance between the first gas dividing flow path and the processing liquid nozzle includes the gas dividing flow path and the second gas dividing flow path, and the distance between the first gas dividing flow path and the processing liquid nozzle is between the second gas dividing flow path and the processing liquid nozzle.
  • the gas supply unit is so that the first flow velocity of the gas in the first gas splitting flow path is higher than the second flow velocity of the gas in the second gas splitting flow path.
  • the gas is supplied to the 1 gas split flow path and the second gas split flow path.
  • a ninth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the unit main body is provided on the upstream side of the electrode group in the gas flow path. Further includes a first plate-like body having a plurality of openings facing the electrode group.
  • a tenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the ninth aspect, wherein the plurality of openings include a first opening and a second opening, and the first opening and the processing liquid nozzle.
  • the distance from the second opening is shorter than the distance between the second opening and the treatment liquid nozzle, and the area of the first opening is smaller than the area of the second opening.
  • the eleventh aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to tenth aspects, and the unit main body is the gas flow path provided on the downstream side of the electrode group. Further includes a shutter that opens and closes the outlet of the.
  • a twelfth aspect of the substrate processing apparatus is the substrate processing apparatus according to the eleventh aspect, wherein the unit main body further includes a second plate-like body having a plurality of outlets as outlets of the gas flow path. ..
  • a thirteenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the twelfth aspect, wherein the plurality of outlets include a first outlet and a second outlet, and the first outlet and the outlet.
  • the distance between the treatment liquid nozzle and the treatment liquid nozzle is shorter than the distance between the second outlet and the treatment liquid nozzle, and the area of the first outlet is smaller than the area of the second outlet.
  • a fourteenth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to thirteenth aspects, wherein the first electric field space and the processing among the electric field spaces between the plurality of electrodes are provided.
  • the distance between the liquid nozzle and the second electric field space in the electric field space is shorter than the distance between the second electric field space and the processing liquid nozzle, and in the first electric field space, the electric field applied to the second electric field space is used.
  • An electric field is applied with an electric field strength higher than that of the electric field strength of.
  • the fifteenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the fourteenth aspect, and the magnitude of the voltage applied between the two electrodes forming the first electric field space among the plurality of electrodes is , The magnitude of the voltage applied between the two electrodes forming the second electric field space among the plurality of electrodes.
  • the sixteenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the fourteenth or fifteenth aspect, and the distance between the two electrodes forming the first electric field space among the plurality of electrodes is the plurality of electrodes. It is narrower than the distance between the two electrodes forming the second electric field space.
  • the head moving mechanism moves the processing liquid nozzle and the plasma generation unit integrally. Therefore, the supply positions of the treatment liquid and the gas can be integrally moved on the main surface of the substrate. According to this, the scan process can be performed with a simple configuration. By this scanning process, the processing liquid and the gas can be supplied to the entire surface of the substrate, so that the substrate can be processed more uniformly.
  • the area of the electric field space in a plan view can be increased, and by extension, plasma can be generated in a wider range. Therefore, it is possible to generate active species by plasma in a wider range.
  • the electrode group moves above the liquid landing position immediately after the processing liquid has landed on the main surface of the substrate. Can be. As a result, the active species can be rapidly acted on the treatment liquid.
  • the electrode group immediately after the treatment liquid has landed on the main surface of the substrate, the electrode group moves above the liquid landing position, so that the active species can be quickly applied to the treatment liquid. Can act.
  • the substrate processing apparatus it is possible to suppress the arc discharge generated between the electrodes.
  • gas and active species can be supplied to the substrate in a wider range.
  • the flow rate can be adjusted for each gas split flow path.
  • the eighth aspect of the substrate processing apparatus more active species are acted on the main surface of the substrate on the main surface of the substrate on which the active species have not yet acted, more rapidly and at a higher first flow rate. Then, the treatment liquid once acted with the active species is allowed to act with less active species at a lower second flow rate. According to this, it is possible to reduce the gas consumption as compared with the case where the gas is supplied at a high flow rate in all the gas split flow paths, while improving the processing capacity of the processing liquid more quickly. In addition, the processing on the main surface of the substrate can be made uniform.
  • the active species can be supplied more uniformly to the main surface of the substrate.
  • the flow rate of the gas passing through the first opening near the processing liquid nozzle can be increased, and the flow rate of the gas passing through the second opening far from the processing liquid nozzle can be decreased. .. Therefore, more active species are allowed to act more quickly on the treatment liquid which has landed on the main surface of the substrate and the active seeds have not yet acted on the main surface, and less on the treatment liquid on which the active seeds have once acted. Active species can act.
  • the gas stays in the gas flow path and more active species can be generated.
  • more active species can be supplied to the main surface of the substrate.
  • the gas and the active species can be more uniformly supplied to the main surface of the substrate.
  • the flow rate of the gas passing through the first outlet near the processing liquid nozzle is increased, and the flow rate of the gas passing through the second outlet far from the processing liquid nozzle is decreased.
  • the flow rate of the gas passing through the first outlet near the processing liquid nozzle is increased, and the flow rate of the gas passing through the second outlet far from the processing liquid nozzle is decreased.
  • Active species can act.
  • the fourteenth aspect of the substrate processing apparatus since the electric field strength at a position close to the processing liquid nozzle is high, more plasma can be generated at a position close to the processing liquid nozzle, and thus more activity. Seeds can be generated. Therefore, more active species are allowed to act more quickly on the treatment liquid which has landed on the main surface of the substrate and the active seeds have not yet acted on the main surface, and less on the treatment liquid on which the active seeds have once acted. Active species can act.
  • an electric field having a high electric field strength can be applied at a position close to the processing liquid nozzle.
  • an electric field having a high electric field strength can be applied at a position close to the processing liquid nozzle.
  • ordinal numbers such as “first” or “second” may be used in the description described below, these terms are used to facilitate understanding of the contents of the embodiments. It is used for convenience, and is not limited to the order that can occur due to these ordinal numbers.
  • the expression indicating the shape not only expresses the shape strictly geometrically, but also, for example, to the extent that the same effect can be obtained. It shall also represent a shape having irregularities and chamfers.
  • the expressions “equipped”, “equipped”, “equipped”, “included”, or “have” one component are not exclusive expressions that exclude the existence of other components.
  • the expression “at least one of A, B and C” includes A only, B only, C only, any two of A, B and C, and all of A, B and C.
  • FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing system 100.
  • the substrate processing system 100 is a single-wafer processing apparatus that processes the substrate W to be processed one by one.
  • the substrate processing system 100 processes the substrate W, which is a disk-shaped semiconductor substrate, and then performs a drying process.
  • a resist is formed on the main surface of the substrate W, and the substrate processing system 100 removes the resist as a process for the substrate W.
  • the substrate W is not necessarily limited to the semiconductor substrate.
  • the substrate W includes a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a FED (Field Emission Display), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and the like.
  • Various substrates can be applied.
  • the shape of the substrate is not limited to the disk shape, and various shapes such as a rectangular plate shape can be adopted.
  • the board processing system 100 includes a load port 101, an indexer robot 110, a main transfer robot 120, a plurality of processing units 130, and a control unit 90.
  • a plurality of load ports 101 are arranged side by side.
  • Carrier C is carried into each load port 101.
  • a FOUP Front Opening Unified Pod
  • SMIF Standard Mechanical Inter Face
  • OC Open Cassette
  • the indexer robot 110 transfers the substrate W between the carrier C and the main transfer robot 120.
  • the main transfer robot 120 transfers the substrate W to the processing unit 130.
  • the processing unit 130 processes the substrate W. Twelve processing units 130 are arranged in the substrate processing system 100 according to the present embodiment.
  • each of which is stacked in the vertical direction is arranged so as to surround the circumference of the main transfer robot 120.
  • FIG. 1 schematically shows one of the processing units 130 stacked in three stages.
  • the number of processing units 130 in the substrate processing system 100 is not limited to 12, and may be changed as appropriate.
  • the main transfer robot 120 is installed in the center of four towers in which the processing units 130 are stacked.
  • the main transfer robot 120 carries the substrate W to be processed received from the indexer robot 110 into each processing unit 130. Further, the main transfer robot 120 carries out the processed substrate W from each processing unit 130 and passes it to the indexer robot 110.
  • the control unit 90 controls the operation of each component of the substrate processing system 100.
  • FIG. 2 is a functional block diagram schematically showing an example of the internal configuration of the control unit 90.
  • the control unit 90 is an electronic circuit, and includes, for example, a data processing unit 91 and a storage medium 92.
  • the data processing unit 91 and the storage medium 92 are connected to each other via the bus 93.
  • the data processing unit 91 may be, for example, an arithmetic processing unit such as a CPU (Central Processor Unit).
  • the storage medium 92 may have a non-temporary storage medium (for example, ROM (Read Only Memory) or hard disk) 921 and a temporary storage medium (for example, RAM (Random Access Memory)) 922.
  • the non-temporary storage medium 921 may store, for example, a program that defines the processing executed by the control unit 90. By executing this program by the data processing unit 91, the control unit 90 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 90 may be executed by the hardware.
  • FIG. 2 an embodiment in which the indexer robot 110, the main transfer robot 120, and the processing unit 130 are connected to the bus 93 is schematically shown as an example.
  • FIG. 3 is a side view schematically showing an example of the configuration of the substrate processing apparatus 1.
  • the substrate processing apparatus 1 corresponds to one of a plurality of processing units 130.
  • the plurality of processing units 130 may have the same configuration as each other, or may have different configurations from each other.
  • the substrate processing device 1 includes a substrate holding portion 2, a nozzle head 3, and a head moving mechanism 30.
  • a substrate holding portion 2 As illustrated in FIG. 3, the substrate processing device 1 includes a substrate holding portion 2, a nozzle head 3, and a head moving mechanism 30.
  • a head moving mechanism 30 As illustrated in FIG. 3, the substrate processing device 1 includes a substrate holding portion 2, a nozzle head 3, and a head moving mechanism 30.
  • each configuration will be outlined first and then detailed.
  • the substrate holding portion 2 rotates the substrate W around the rotation axis Q1 while holding the substrate W in a horizontal posture.
  • the horizontal posture referred to here is a posture in which the thickness direction of the substrate W is along the vertical direction.
  • the rotation axis Q1 is an axis that passes through the center of the substrate W and is along the vertical direction.
  • Such a substrate holding portion 2 is also called a spin chuck.
  • the radial direction and the circumferential direction of the rotation axis Q1 may be simply referred to as the radial direction and the circumferential direction.
  • the nozzle head 3 supplies the processing liquid to the main surface of the substrate W held by the substrate holding portion 2, and also supplies the gas via the electric field space for plasma described later to the main surface of the substrate W.
  • the processing liquid flowing from the nozzle head 3 toward the substrate W is schematically indicated by a broken line arrow
  • the gas flowing from the nozzle head 3 toward the substrate W is schematically indicated by a solid line arrow.
  • the electric field space means a space to which an electric field for generating plasma is applied, as will be described in detail later.
  • various active species for example, oxygen radicals
  • the active species moves along the flow of gas and is supplied to the main surface of the substrate W.
  • the nozzle head 3 is provided vertically above the substrate W held by the substrate holding portion 2, and supplies the treatment liquid and the gas to the upper surface of the substrate W.
  • the nozzle head 3 includes a processing liquid nozzle 4 and a plasma generation unit 5.
  • the treatment liquid nozzle 4 has a discharge port 4a on the lower end surface thereof, and discharges the treatment liquid from the discharge port 4a toward the main surface of the substrate W.
  • sulfuric acid is assumed as the treatment liquid, but for example, a liquid containing at least one of sulfate, peroxosulfate and peroxosulfate, or a chemical liquid such as a liquid containing hydrogen peroxide may be used.
  • the treatment liquid is typically an aqueous solution.
  • the plasma generation unit 5 is provided at a position adjacent to the processing liquid nozzle 4 when viewed along the rotation axis Q1 (that is, in a plan view), and is integrally connected to the processing liquid nozzle 4.
  • Gas is supplied to the plasma generation unit 5 from the gas supply unit 50, and the gas flows through the gas flow path 60 in the plasma generation unit 5 toward the main surface of the substrate W.
  • an oxygen-containing gas containing oxygen can be applied to the gas.
  • the oxygen-containing gas includes, for example, oxygen gas, ozone gas, carbon dioxide gas, air, or a mixed gas of at least two of these.
  • the gas may further contain an inert gas.
  • the inert gas includes, for example, nitrogen gas, argon gas, neon gas, helium gas, or a mixed gas of at least two of these.
  • the plasma generation unit 5 has an electrode group 7 on the downstream side of the gas flow path 60 as described later, and an electric field is applied to the electric field space around the electrode group 7 by the electrode group 7. As the gas passes through the electric field space, the electric field acts on the gas. As a result, a part of the gas is ionized to generate plasma (plasma generation processing). For example, an inert gas such as argon gas is ionized to generate plasma.
  • plasma is generated under atmospheric pressure.
  • the atmospheric pressure referred to here is, for example, 80% or more of the standard pressure and 120% or less of the standard pressure.
  • plasma ions or electrons act on an oxygen-containing gas to generate oxygen radicals.
  • active species move along the flow of gas and flow out from the lower end of the plasma generating unit 5 toward the main surface of the substrate W held by the substrate holding portion 2.
  • the nozzle head 3 is provided so as to be movable by the head moving mechanism 30.
  • the head moving mechanism 30 moves the nozzle head 3 at least along the moving direction D1 along the main surface of the board W held by the board holding portion 2. For example, in a plan view, the head moving mechanism 30 reciprocates the nozzle head 3 along the diameter of the substrate W.
  • the head moving mechanism 30 may include a linear motion mechanism such as a linear motor or a ball screw mechanism.
  • the head moving mechanism 30 may include an arm type moving mechanism instead of the linear moving mechanism.
  • the nozzle head 3 is connected to the tip of an arm extending in the horizontal direction.
  • the base end of the arm is connected to a support column extending along the vertical direction.
  • This support column is connected to a motor and rotates around the central axis of the support column along the vertical direction.
  • the arm swirls in the horizontal plane around the central axis, and the nozzle head 3 provided at the tip of the arm moves in an arc around the central axis in the horizontal plane. do.
  • the head moving mechanism 30 is configured so that the arc-shaped moving path follows the diameter of the substrate W in a plan view. In this way, the head moving mechanism 30 can move the nozzle head 3 in parallel with the main surface of the substrate W.
  • the head moving mechanism 30 can also move the nozzle head 3 between the standby position and the processing position on the moving path.
  • the standby position is a position where the nozzle head 3 does not interfere with the transport path of the substrate W when the substrate W is carried in and out, and is, for example, a position radially outside the substrate holding portion 2 in a plan view.
  • the processing position is a position where the nozzle head 3 supplies the processing liquid and the gas to the substrate W, and the nozzle head 3 is a position where the nozzle head 3 faces the main surface of the substrate W in the vertical direction.
  • the head moving mechanism 30 can also reciprocate the nozzle head 3 within the moving range in which the processing liquid nozzle 4 faces the main surface of the substrate W.
  • the treatment liquid nozzle 4 faces the first peripheral edge position on one side in the radial direction of the substrate W, and the treatment liquid nozzle 4 faces the other peripheral edge portion on the other side of the substrate W.
  • the nozzle head 3 can be reciprocated to and from the peripheral position.
  • the treatment liquid nozzle 4 in a state where the nozzle head 3 is located at the first peripheral edge position is schematically shown by a two-dot chain line.
  • the processing liquid and gas can be supplied to the main surface of the rotating substrate W while the nozzle head 3 is reciprocated (so-called scan processing).
  • scan processing the processing liquid and the gas can be supplied to the entire surface of the main surface of the substrate W, and the substrate W can be processed more uniformly.
  • the nozzle head 3 does not necessarily have to reciprocate between the first peripheral edge position and the second peripheral edge position.
  • the head moving mechanism 30 may reciprocate the nozzle head 3 between the central position where the processing liquid nozzle 4 faces the central portion of the substrate W and the first peripheral edge position.
  • the treatment liquid and the gas can be supplied to the entire surface of the main surface of the substrate W.
  • the treatment liquid flows radially outward on the main surface of the substrate W and scatters outward from the peripheral edge of the substrate W. Therefore, in the example of FIG. 3, the cup 8 is provided in the substrate processing apparatus 1.
  • the cup 8 has a cylindrical shape that surrounds the substrate holding portion 2.
  • the central axis of the tubular shape of the cup 8 coincides with the rotation axis Q1.
  • the treatment liquid scattered outward from the peripheral edge of the substrate W collides with the inner peripheral surface of the cup 8 and flows downward to be collected by a collection mechanism (not shown) or drained to the outside by a drainage mechanism (not shown). Or something.
  • the substrate processing apparatus 1 is provided with an exhaust port (not shown) outside the substrate holding portion 2 in the radial direction.
  • the cup 8 may be provided with an exhaust port. The active species and gas supplied to the main surface of the substrate W flow radially outward along the main surface of the substrate W and are exhausted from the exhaust port.
  • the substrate holding portion 2 includes a base 21, a plurality of chucks 22, and a rotation mechanism 23.
  • the base 21 has a disk shape centered on the rotation axis Q1, and a plurality of chucks 22 are erected on the upper surface thereof.
  • the plurality of chucks 22 are provided at equal intervals along the peripheral edge of the substrate W.
  • the chuck 22 can be driven between a chuck position abutting on the peripheral edge of the substrate W and a release position away from the peripheral edge of the substrate W.
  • the plurality of chucks 22 hold the peripheral edge of the substrate W in a state where the plurality of chucks 22 are stopped at the respective chuck positions.
  • the chuck drive unit (not shown) that drives the plurality of chucks 22 is composed of, for example, a link mechanism, a magnet, or the like, and is controlled by the control unit 90.
  • the rotation mechanism 23 includes a motor 231.
  • the motor 231 is connected to the lower surface of the base 21 via the shaft 232 and is controlled by the control unit 90. As the motor 231 rotates the shaft 232 and the base 21 around the rotation axis Q1, the substrate W held by the plurality of chucks 22 also rotates around the rotation axis Q1.
  • the substrate holding portion 2 does not necessarily have to include the chuck 22.
  • the substrate holding portion 2 may hold the substrate W by, for example, an attractive force or an electrostatic force.
  • FIG. 4 is a cross-sectional view schematically showing an example of the configuration of the nozzle head 3.
  • FIG. 4 shows a cross section taken along the line AA of FIG.
  • the nozzle head 3 will be described with reference to FIGS. 3 and 4.
  • the treatment liquid nozzle 4 of the nozzle head 3 is formed of, for example, a resin (for example, PTFE (polytetrafluoroethylene)) or an insulator (dielectric) such as quartz, and has a cylindrical shape in the illustrated example. .. From the viewpoint of preventing elution due to exposure to plasma, it is preferable to form the treatment liquid nozzle 4 with quartz or ceramics instead of resin.
  • the treatment liquid nozzle 4 has a discharge port 4a on its lower end surface.
  • the treatment liquid flow path 4b inside the treatment liquid nozzle 4 extends along the vertical direction, and the lower end opening of the treatment liquid flow path 4b corresponds to the discharge port 4a.
  • One end of the processing liquid supply pipe 45 is connected to the processing liquid nozzle 4.
  • the upper end of the processing liquid nozzle 4 is connected to one end of the processing liquid supply pipe 45. That is, the upper end opening 4c of the processing liquid flow path 4b is connected to one end opening of the processing liquid supply pipe 45.
  • the other end of the processing liquid supply pipe 45 is connected to the processing liquid supply source 47.
  • the treatment liquid supply source 47 includes, for example, a tank for storing the treatment liquid.
  • a valve 46 is interposed in the processing liquid supply pipe 45.
  • the valve 46 is controlled by the control unit 90, and when the valve 46 is opened, the processing liquid flows from the processing liquid supply source 47 inside the processing liquid supply pipe 45 and is supplied to the processing liquid nozzle 4.
  • This treatment liquid flows from the upper side to the lower side in the treatment liquid flow path 4b, and is discharged from the discharge port 4a toward the main surface of the substrate W.
  • the valve 46 is closed, the discharge of the treatment liquid from the discharge port 4a of the treatment liquid nozzle 4 is stopped.
  • the substrate processing apparatus 1 may have a configuration in which a plurality of types of processing liquids are supplied to the main surface of the substrate W.
  • the treatment liquid nozzle 4 may have a plurality of treatment liquid flow paths. In this case, each treatment liquid flow path is individually connected to each type of treatment liquid supply source.
  • the substrate processing device 1 may include a nozzle separately from the nozzle head 3.
  • the plurality of types of treatment liquids for example, in addition to chemical liquids such as sulfuric acid, rinse liquids such as pure water, ozone water, carbonated water, and isopropyl alcohol can be adopted.
  • the treatment liquid nozzle 4 has a plurality of treatment liquid flow paths.
  • the plasma generation unit 5 includes a unit main body 6 and an electrode group 7.
  • the unit main body 6 forms a gas flow path 60 for flowing the gas from the gas supply unit 50 toward the main surface of the substrate W.
  • the electrode group 7 is provided on the downstream side of the gas flow path 60, and is configured to allow gas to pass through as described later.
  • the electrode group 7 applies a voltage to the surrounding space (electric field space). When the gas passes through the electric field space, an electric field is applied to the gas, and the application of the electric field causes a part of the gas to be ionized to generate plasma.
  • Various active species are generated during the generation of this plasma, and these active species are supplied to the main surface of the substrate W along the flow of gas.
  • the unit body 6 is formed of, for example, an insulator (dielectric) such as quartz or ceramics.
  • the unit body 6 includes an upper surface portion 61 and a side wall portion 62.
  • the upper surface portion 61 has, for example, a plate shape, and is arranged in a posture in which the thickness direction thereof is along the vertical direction.
  • the upper surface portion 61 has, for example, a rectangular shape in a plan view.
  • One side of the upper surface portion 61 is arranged in a posture along, for example, the moving direction D1 of the nozzle head 3.
  • a through hole 61a is formed in the central portion of the upper surface portion 61.
  • the through hole 61a penetrates the upper surface portion 61 along the vertical direction, and the treatment liquid nozzle 4 is arranged through the through hole 61a. As a result, the treatment liquid nozzle 4 is fixed to the upper surface portion 61.
  • the side wall portion 62 is erected on the entire circumference of the peripheral edge of the upper surface portion 61, and extends vertically downward from the peripheral edge of the upper surface portion 61.
  • the side wall portion 62 has a square tube shape surrounding the treatment liquid nozzle 4.
  • the space surrounded by the upper surface portion 61 and the side wall portion 62 corresponds to the gas flow path 60.
  • the unit main body 6 is formed with an inflow port 611 communicating with the gas flow path 60.
  • the inflow port 611 is formed on the upper surface portion 61.
  • the inflow port 611 is connected to the gas supply unit 50, and the gas supply unit 50 supplies gas to the gas flow path 60 via the inflow port 611.
  • the unit main body 6 further includes one or more flow path partition portions 63 that partition the gas flow path 60 into a plurality of gas split flow paths 60a to 60d in the moving direction D1 of the nozzle head 3.
  • three flow path partition portions 63a to 63c are provided as the flow path partition portions 63, and the gas flow path 60 is partitioned into four gas split flow paths 60a to 60d.
  • Each flow path partition 63 has, for example, a plate shape, and is arranged in a posture in which the thickness direction thereof is along the moving direction D1.
  • the flow path partition portions 63a to 63c are arranged in this order from one side to the other side in the moving direction D1.
  • the upper end surface of each flow path partition portion 63 is connected to the lower surface of the upper surface portion 61, and both end faces of the flow path partition portion 63 are connected to the inner surface of the side wall portion 62.
  • the gas split flow paths 60a to 60d are formed in this order in the moving direction D1 by the three flow path partition portions 63a to 63c.
  • the flow path partition portion 63b is formed with a through hole 631 through which the treatment liquid nozzle 4 is arranged. Therefore, the gas dividing flow paths 60a and 60b are located on one side of the moving direction D1 with respect to the processing liquid nozzle 4, and the gas dividing flow paths 60c and 60d are located on the other side of the moving direction D1 with respect to the processing liquid nozzle 4. do. That is, gas flow paths 60 are formed on both sides of the processing liquid nozzle 4 in the moving direction D1.
  • the gas dividing flow paths 60b and 60c are formed at positions closer to the processing liquid nozzle 4 in the moving direction D1, and the gas dividing flow paths 60a and 60d are formed at positions farther from the processing liquid nozzle 4 in the moving direction D1.
  • the distance between each gas dividing flow path 60b, 60c and the processing liquid nozzle 4 is shorter than the distance between each gas dividing flow path 60a, 60d and the processing liquid nozzle 4.
  • inflow ports 611a to 611d are formed as inflow ports 611 connected to the gas flow path 60.
  • the inflow port 611a is connected to the gas dividing flow path 60a
  • the inflow port 611b is connected to the gas dividing flow path 60b
  • the inflow port 611c is connected to the gas dividing flow path 60c
  • the inflow port 611d is connected to the gas dividing flow path 60d.
  • the gas supply unit 50 supplies gas to the gas split flow paths 60a to 60d via the inflow ports 611a to 611d.
  • the gas supply unit 50 includes gas supply pipes 51a and 51b and valves 52a and 52b.
  • the gas supply pipe 51a includes two branch pipes and a common pipe, one end of the branch pipe is connected to the inlets 611a and 611d, respectively, and the other end of the branch pipe is commonly connected to one end of the common pipe.
  • the other end of the common pipe is connected to the gas supply source 53.
  • the gas supply pipe 51a connects the inflow ports 611a and 611d to the gas supply source 53.
  • the gas supply pipe 51b also includes two branch pipes and a common pipe, and like the gas supply pipe 51a, connects the inflow ports 611b and 611c to the gas supply source 53.
  • the valve 52a is interposed in the common pipe of the gas supply pipe 51a and is controlled by the control unit 90.
  • the valve 52a opens, the gas from the gas supply source 53 flows inside the gas supply pipe 51a and flows into the gas dividing flow paths 60a and 60d via the inflow ports 611a and 611d, respectively.
  • the valve 52a is closed, the supply of gas to the gas dividing flow paths 60a and 60d is stopped.
  • the valve 52a may be a flow rate adjusting valve capable of adjusting the flow rate of the gas flowing inside the gas supply pipe 51a. Alternatively, a flow rate adjusting valve may be provided separately from the valve 52a.
  • the valve 52b is interposed in the common pipe of the gas supply pipe 51b and is controlled by the control unit 90.
  • the valve 52b opens, the gas from the gas supply source 53 flows inside the gas supply pipe 51b and flows into the gas dividing flow paths 60b and 60c via the inflow ports 611b and 611c, respectively.
  • the valve 52b is closed, the supply of gas to the gas dividing flow paths 60b and 60c is stopped.
  • the valve 52b may be a flow rate adjusting valve capable of adjusting the flow rate of the gas flowing inside the gas supply pipe 51b. Alternatively, a flow rate adjusting valve may be provided separately from the valve 52b.
  • the flow rate of the gas flowing in the gas dividing flow paths 60a and 60d and the flow rate of the gas flowing in the gas dividing flow paths 60c and 60b can be individually adjusted. That is, the flow rate of the gas in the gas dividing flow paths 60b and 60c near the processing liquid nozzle 4 can be adjusted independently of the gas flow rate in the gas dividing flow paths 60a and 60d far from the processing liquid nozzle 4. For example, each flow rate can be adjusted so that the flow velocity of the gas in the gas dividing channels 60b, 60c is higher than the flow velocity of the gas in the gas dividing channels 60a, 60d. This effect will be described in detail later.
  • the gas supply unit 50 collectively adjusts the flow rate in the gas dividing flow paths 60b and 60c, but has a configuration in which the flow rate in the gas dividing flow paths 60b and 60c can be adjusted independently of each other. May be. The same applies to the gas split flow paths 60a and 60d.
  • the width of the gas flow path 60 (gas split flow paths 60a to 60d) in the direction orthogonal to the moving direction D1 is wider than the width of the discharge port 4a of the treatment liquid nozzle 4, for example, the radius of the substrate W.
  • the above is more preferably the diameter of the substrate W or more.
  • the width of the gas flow path 60 may differ depending on the position in the moving direction D1 due to manufacturing variations and the like. In that case, the maximum value of the width of the gas flow path 60 may be wider than the width of the discharge port 4a of the treatment liquid nozzle 4, for example, the radius of the substrate W or more, more preferably the diameter of the substrate W or more.
  • the plasma generation unit 5 can supply the gas to the main surface of the substrate W in a wider range in a plan view. That is, the gas can be more uniformly supplied to the main surface of the substrate W.
  • the unit body 6 further includes the first plate-shaped body 64.
  • the first plate-shaped body 64 is provided in the gas flow path 60. Specifically, the first plate-shaped body 64 is provided on the upstream side of the gas flow with respect to the electrode group 7, and is provided at a position facing the electrode group 7 in the vertical direction.
  • the first plate-like body 64 has a plate-like shape, and is arranged in a posture in which the thickness direction thereof is along the vertical direction.
  • a plurality of openings 641 are formed in the first plate-shaped body 64, and the gas passes through the plurality of openings 641 and flows toward the electrode group 7.
  • first plate-shaped bodies 64a and 64b are provided as the first plate-shaped body 64.
  • the first plate-shaped body 64a is provided corresponding to the gas dividing flow paths 60a and 60b.
  • the lower end of the flow path partition portion 63a is connected to the upper surface of the first plate-shaped body 64a.
  • the peripheral edge of the first plate-shaped body 64a is connected to the side wall portion 62 and the flow path partition portion 63b.
  • the first plate-shaped body 64b is provided corresponding to the gas dividing flow paths 60c and 60d.
  • the lower end of the flow path partition portion 63c is connected to the upper surface of the first plate-shaped body 64b.
  • the peripheral edge of the first plate-shaped body 64b is connected to the side wall portion 62 and the flow path partition portion 63b.
  • the plurality of openings 641 penetrate the first plate-shaped body 64 in the vertical direction, and have, for example, a circular shape in a plan view.
  • the plurality of openings 641 are arranged two-dimensionally in a plan view, for example, in a matrix.
  • the gas flowing through the gas dividing flow paths 60a and 60b passes through the plurality of openings 641 of the first plate-shaped body 64a and flows toward the electrode group 7a.
  • the gas flowing through the gas dividing flow paths 60c and 60d passes through the plurality of openings 641 of the first plate-shaped body 64b and flows toward the electrode group 7b.
  • the gas can flow more uniformly toward the electrode group 7. If the distance between the first plate-shaped body 64 and the electrode group 7 becomes long, the uniformity of the gas may decrease. Therefore, the distance may be set in consideration of the uniformity of the gas.
  • the electrode group 7 is provided on the downstream side of the gas flow path 60 as described above, and is provided in a region overlapping the gas flow path 60 in a plan view. When the gas passes through the electrode group 7, the electrode group 7 applies an electric field to the gas. As a result, a part of the gas is ionized to generate plasma.
  • two electrode groups 7a and 7b are provided as the electrode group 7.
  • the electrode group 7a is provided on the downstream side of the gas dividing flow paths 60a and 60b
  • the electrode group 7b is provided on the downstream side of the gas dividing flow paths 60c and 60d.
  • the electrode group 7a faces the gas dividing flow paths 60a and 60b in the vertical direction
  • the electrode group 7b faces the gas dividing flow paths 60c and 60d in the vertical direction. That is, in the example of FIG. 3, the electrode groups 7a and 7b are provided on opposite sides of the treatment liquid nozzle 4 in the moving direction D1 of the nozzle head 3.
  • the electrode group 7 is provided at a position adjacent to the processing liquid nozzle 4 in the moving direction D1, and is provided on both sides of the processing liquid nozzle 4 in the moving direction D1 in the illustrated example.
  • FIGS. 5 and 6 are diagrams schematically showing an example of the configuration of the electrode group 7.
  • FIG. 5 is a plan view showing an example of the configuration of the electrode group 7, and
  • FIG. 6 shows a cross section taken along the line CC of FIG.
  • the electrode group 7 will be described with reference to FIGS. 5 and 6.
  • the electrode group 7 includes a plurality of electrodes 71.
  • the plurality of electrodes 71 are formed of a conductor such as metal, and are provided side by side at intervals in a plan view.
  • each electrode 71 has a horizontally long elongated shape.
  • the long shape referred to here means a shape in which the size of the electrode 71 in the longitudinal direction is longer than the size in the horizontal direction orthogonal to the longitudinal direction thereof.
  • the plurality of electrodes 71 are arranged in a posture in which the longitudinal direction thereof is orthogonal to the moving direction D1.
  • the plurality of electrodes 71 are arranged side by side at intervals in the horizontal arrangement direction (here, the moving direction D1) orthogonal to the longitudinal direction thereof.
  • the horizontal arrangement direction here, the moving direction D1
  • four electrodes 71a to 71d are shown as the plurality of electrodes 71.
  • the electrodes 71a to 71d are arranged in this order from one side to the other side in the arrangement direction.
  • the electrodes 71a to 71d are arranged, for example, in the same plane.
  • Electrodes 71a and 71c arranged in odd numbers from one side in the arrangement direction are connected to the first output terminal 81 of the power supply 80, and the electrodes 71b and 71d arranged in even numbers are the first of the power supply 80. 2 Connected to the output terminal 82.
  • the electrodes 71a and 71c are connected to each other via the connecting portion 711a at one end in the longitudinal direction.
  • the connecting portion 711a has, for example, a plate shape, and is integrally formed of, for example, the same material as the electrodes 71a and 71c.
  • the electrodes 71b and 71d are connected to each other via a connecting portion 711b at the other end in the longitudinal direction.
  • the connecting portion 711b has, for example, a plate shape, and is integrally formed of, for example, the same material as the electrodes 71b and 71d. According to this, the plurality of electrodes 71 are arranged in a comb-teeth shape.
  • the connecting portion 711a is connected to the first output end 81 of the power supply 80 via a lead wire
  • the connecting portion 711b is connected to the second output end 82 of the power supply 80 via a lead wire.
  • the power supply 80 includes, for example, a switching power supply circuit (for example, an inverter circuit) and is controlled by the control unit 90.
  • the power supply 80 applies a voltage (for example, a high frequency voltage) between the first output terminal 81 and the second output end 82. As a result, an electric field is generated in the space (electric field space) between the plurality of electrodes 71.
  • the gas flowing along the gas flow path 60 passes through the electric field space between the plurality of electrodes 71.
  • the electric field acts on the gas, and a part of the gas is ionized to generate plasma (plasma generation processing).
  • plasma generation processing Various active species are generated during the generation of this plasma, and these active species move toward the main surface of the substrate W along the gas flow.
  • the distance between the electrode group 7 and the substrate W is set to such a distance that an arc discharge does not occur between the electrode group 7 and the substrate W.
  • the distance between the electrode group 7 and the substrate W is set to, for example, about 2 mm or more and about 5 mm or less.
  • the width of the electrode group 7 in the direction orthogonal to the moving direction D1 (here, the length in the longitudinal direction of the electrode 71) is wider than the width of the discharge port 4a of the treatment liquid nozzle 4 (see FIG. 5), for example, the substrate W. It is equal to or greater than the radius, and more preferably equal to or greater than the diameter of the substrate W. According to this, in a plan view, plasma can be generated in a wider range with respect to the substrate W, and active species can be supplied in a wider range with respect to the main surface of the substrate W.
  • each electrode 71 is covered with a dielectric protective member 72.
  • the dielectric protection member 72 is formed of an insulator (dielectric) such as quartz or ceramics, and covers the surface of the electrode 71.
  • the dielectric protection member 72 is in close contact with the surface of the electrode 71.
  • the dielectric protection member 72 may be a dielectric film formed on the surface of the electrode 71.
  • the dielectric protection member 72 can protect the electrode 71 from plasma.
  • each electrode 71 has a circular cross-sectional shape, and each dielectric protection member 72 has an annular cross-sectional shape.
  • a dielectric partition member 73 is provided between two adjacent electrodes 71. Specifically, the dielectric partition member 73 is provided between all two of the plurality of electrodes 71.
  • the dielectric partition member 73 is formed of, for example, an insulator (dielectric) such as quartz or ceramics, and is provided at a distance from each electrode 71.
  • the dielectric partition member 73 has, for example, a plate shape, and is provided in a posture in which the thickness direction thereof is along the arrangement direction of the electrodes 71 (here, the moving direction D1).
  • the main surface of the dielectric partition member 73 has, for example, a rectangular shape long in the longitudinal direction of the electrode 71.
  • the upper end of the dielectric partition member 73 is located above the upper end of the electrode 71, and the lower end of the dielectric partition member 73 is located below the lower end of the electrode 71.
  • the lowest upper end position of the plurality of dielectric partition members 73 is higher than the highest upper end position of the plurality of electrodes 71, and the highest lower end position of the plurality of dielectric partition members 73 is. , It is lower than the lowest lower end position among the plurality of electrodes 71.
  • the insulation distance between the plurality of electrodes 71 can be lengthened. According to this, it is possible to suppress the generation of arc discharge between the plurality of electrodes 71 while increasing the voltage of the plurality of electrodes 71 to generate plasma more efficiently.
  • the dielectric partition member 73 is connected to the frame body 74.
  • the frame body 74 is also formed of, for example, an insulator (dielectric material) such as quartz or ceramics, and has, for example, a square annular shape in a plan view.
  • the frame body 74 surrounds a plurality of dielectric partition members 73 in a plan view, and both ends of each dielectric partition member 73 in the longitudinal direction are connected to the inner surface of the frame body 74.
  • the frame body 74 also substantially surrounds the plurality of electrodes 71.
  • the connecting portions 711a and 711b are located outside the frame body 74, and the electrodes 71a and 71c are connected to the connecting portion 711a through the frame body 74 on one side in the longitudinal direction thereof.
  • Each of the electrodes 71b and 71c penetrates the frame body 74 on the other side in the longitudinal direction thereof and is connected to the connecting portion 711b.
  • most of the electrodes 71 are located inside the frame body 74, and the electric field space is formed inside the frame body 74 in a plan view.
  • the frame body 74 is connected to, for example, the lower end of the side wall portion 62 of the unit body 6.
  • the gas passes through the electrode group 7 in the frame body 74. Specifically, the gas passes downward through the space between the plurality of electrodes 71 and the plurality of dielectric partition members 73.
  • an electric field generated in the electric field space between the plurality of electrodes 71 acts on the gas, a part of the gas is ionized to generate plasma.
  • Various active species are generated when this plasma is generated. These active species move downward along the gas flow and flow out towards the main surface of the substrate W.
  • the nozzle head 3 can supply the treatment liquid and the gas to the main surface of the substrate W by the treatment liquid nozzle 4 and the plasma generation unit 5.
  • FIG. 7 is a flowchart showing an example of the operation of the substrate processing device 1.
  • the unprocessed substrate W is carried into the substrate processing apparatus 1 by the main transfer robot 120 (step S1).
  • a resist is formed on the upper surface of the substrate W.
  • the board holding portion 2 of the board processing device 1 holds the carried-in board W.
  • the substrate holding portion 2 starts rotating the substrate W around the rotation axis Q1 (step S2).
  • step S3 chemical treatment is performed (step S3). Specifically, first, the head moving mechanism 30 moves the nozzle head 3 from the standby position to the processing position. Next, the valves 46, 52a and 52b are opened, the power supply 80 applies a voltage to the electrode 71, and the head moving mechanism 30 reciprocates the nozzle head 3 along the moving direction D1 (so-called scan processing). For example, the head moving mechanism 30 reciprocates the nozzle head 3 between the first peripheral edge position and the second peripheral edge position.
  • the treatment liquid here, a chemical liquid such as sulfuric acid
  • the treatment liquid nozzle 4 When the valve 46 opens, the treatment liquid (here, a chemical liquid such as sulfuric acid) is discharged from the discharge port 4a of the treatment liquid nozzle 4 toward the upper surface of the substrate W.
  • the chemical solution deposited on the upper surface of the rotating substrate W flows radially outward along the upper surface of the substrate W and scatters outward from the peripheral edge of the substrate W.
  • gas here, a mixed gas of oxygen-containing gas and rare gas
  • gas supply unit 50 gas supply unit 50 to the gas flow path 60 via the inflow port 611. More specifically, the gas flows into the gas split flow paths 60a to 60d via the inflow ports 611a to 611d.
  • gas is supplied to the gas dividing flow paths 60a and 60d far from the processing liquid nozzle 4 at the first flow rate, and the gas dividing flow paths 60b and 60c near the processing liquid nozzle 4 have a larger flow rate than the first flow rate. Gas is supplied at two flow rates.
  • the gas flowing downward through the gas split flow paths 60a and 60b passes through the plurality of openings 641 of the first plate-shaped body 64a. As a result, the gas is rectified and flows more uniformly toward the electrode group 7a. Similarly, the gas flowing downward through the gas dividing flow paths 60c and 60d passes through the plurality of openings 641 of the first plate-shaped body 64b. As a result, the gas is rectified and flows more uniformly toward the electrode group 7b.
  • the power supply 80 applies a voltage to the electrodes 71, an electric field is generated in the electric field space between the electrodes 71 in each of the electrode groups 7a and 7b.
  • an electric field acts on the gas, and a part of the gas is ionized to generate plasma.
  • various reactions such as dissociation and excitation of molecules and atoms due to electron collision reaction occur, and various active species (for example, oxygen radicals) such as highly reactive neutral radicals are generated.
  • active species for example, oxygen radicals
  • argon gas is turned into plasma by an electric field, and the plasma acts on an oxygen-containing gas to generate oxygen radicals.
  • These active species eg, oxygen radicals
  • the active species acts on the chemical solution on the upper surface of the substrate W.
  • an oxygen radical acts on the sulfuric acid on the upper surface of the substrate W
  • peroxomonosulfuric acid is produced by the oxidizing power of the oxygen radical.
  • carboic acid can effectively remove the resist on the upper surface of the substrate W. In other words, the action of the active species on the drug solution improves the processing capacity of the drug solution.
  • the active species can act directly not only on the chemical solution on the main surface of the substrate W but also on the substrate W. For example, even if the oxygen radical acts directly on the resist of the substrate W, the resist can be removed by the oxidizing power of the oxygen radical.
  • the valves 46, 52a and 52b are closed and the power supply 80 stops the voltage output.
  • the discharge of the chemical liquid from the treatment liquid nozzle 4 is stopped, and the outflow of gas from the plasma generation unit 5 is also stopped.
  • the head moving mechanism 30 stops the reciprocating movement of the nozzle head 3.
  • the substantial chemical solution treatment here, the resist removal treatment
  • the rinsing process is performed (step S4). Specifically, for example, the head moving mechanism 30 moves the nozzle head 3 so that the treatment liquid nozzle 4 faces the central portion of the substrate W, and the substrate processing device 1 moves from, for example, the treatment liquid nozzle 4 toward the upper surface of the substrate W. And discharge the rinse liquid. As a result, the chemical solution on the upper surface of the substrate W is replaced with the rinse solution.
  • the head moving mechanism 30 may reciprocate the nozzle head 3 in this rinsing process (so-called scan process).
  • the discharge of the rinse solution from the treatment solution nozzle 4 is stopped, and the head moving mechanism 30 moves the nozzle head 3 to the standby position.
  • step S5 a drying process is performed (step S5).
  • the substrate holding portion 2 increases the rotation speed of the substrate W.
  • the rinsing liquid on the upper surface of the substrate W is shaken off from the peripheral edge of the substrate W, and the substrate W dries (so-called spin drying).
  • step S6 the substrate holding portion 2 ends the rotation of the substrate W.
  • step S7 the processed substrate W is carried out from the substrate processing apparatus 1 by the main transfer robot 120 (step S7).
  • the processing liquid nozzle 4 and the plasma generation unit 5 are arranged adjacent to each other in a plan view. Therefore, the gas from the plasma generation unit 5 is supplied to the processing liquid discharged from the processing liquid nozzle 4 and landed on the main surface of the substrate W.
  • the active species can act on the treatment liquid on the main surface of the substrate W. Therefore, the processing capacity of the processing liquid can be improved on the main surface of the substrate W. Therefore, the processing liquid acts on the main surface of the substrate W in a state where the processing capacity is improved, and the substrate W can be processed in a shorter time. Further, since the active species can act directly on the main surface of the substrate W, the substrate W can be processed in a shorter time.
  • the processing liquid nozzle 4 and the plasma generation unit 5 are integrally connected to each other. Therefore, the head moving mechanism 30 can move the processing liquid nozzle 4 and the plasma generation unit 5 integrally. Therefore, the supply positions of the treatment liquid and the gas can be integrally moved on the main surface of the substrate W. According to this, the scan process can be performed with a simple configuration. That is, unlike the present embodiment, when the treatment liquid nozzle 4 and the plasma generation unit 5 are not connected to each other, a moving mechanism for individually moving them is required. On the other hand, in the present embodiment, a single head moving mechanism 30 is sufficient. Therefore, the scan process can be performed with a simple configuration, and the device size and the manufacturing cost can be reduced.
  • the processing liquid and the gas can be uniformly supplied to the entire surface of the main surface of the substrate W. Therefore, the substrate W can be processed more uniformly.
  • the plurality of electrodes 71 of the electrode group 7 are arranged side by side in a plan view.
  • a plurality of electrodes 71 having a long horizontal shape are arranged side by side at intervals in the lateral direction (arrangement direction).
  • the area of the electrode group 7 in a plan view can be easily increased. Therefore, plasma can be generated in a wide range in a plan view, and the active species can be supplied in a wide range to the main surface of the substrate W. Therefore, the substrate W can be processed more uniformly.
  • the gas flow path 60 and the electrode group 7 are provided at positions adjacent to the treatment liquid nozzle 4 in the moving direction D1 of the nozzle head 3, and are provided on both sides as a more specific example.
  • the active species are supplied to the main surface of the substrate W on both sides of the treatment liquid nozzle 4 in the moving direction D1.
  • the region to which the active species is supplied is referred to as an outflow region in a plan view
  • outflow regions exist on both sides of the treatment liquid nozzle 4. According to this, during the reciprocating movement of the nozzle head 3, one of the outflow regions quickly reaches the discharge position immediately after the treatment liquid nozzle 4 discharges the treatment liquid. Therefore, the active species can be made to act more quickly on the treatment liquid which has landed on the main surface of the substrate W and has not yet acted on the active species. As a result, the processing time of the substrate W can be shortened.
  • the first plate-shaped body 64 having a plurality of openings 641 is provided on the upstream side with respect to the electrode group 7. According to this, the gas that has passed through the plurality of openings 641 passes through the electrode group 7 more uniformly. Therefore, the gas passes through the electric field space more uniformly, and plasma is generated more uniformly. As a result, the active species can be generated more uniformly and the active species can be more uniformly supplied to the main surface of the substrate W. Therefore, the substrate W can be processed more uniformly.
  • the flow path partition portion 63 for dividing the gas flow path 60 into a plurality of gas split flow paths 60a to 60d in the moving direction D1 is provided. According to this, it is possible to adjust the flow rate of the gas in the gas split flow paths 60a to 60d. For example, the flow rate of the gas in the gas dividing flow paths 60b and 60c near the processing liquid nozzle 4 is higher than the flow rate of the gas in the gas dividing flow paths 60a and 60d far from the processing liquid nozzle 4. The flow rate in 60a to 60d can be adjusted.
  • more active species can be allowed to act on the treatment liquid discharged from the treatment liquid nozzle 4 and landed on the main surface of the substrate W. That is, more active species are allowed to act on the treatment liquid discharged from the treatment liquid nozzle 4 on which the active species have not yet acted, and less active species are allowed to act on the treatment liquid once the active species have acted.
  • the gas consumption can be reduced as compared with the case where the gas is supplied at a high flow rate in all the gas split flow paths 60a to 60d. Can be done.
  • the substrate W can be treated more uniformly by allowing a small amount of active species to act on the treatment liquid on which the active species have acted.
  • the dielectric partition member 73 is provided between the electrodes 71. According to this, it is possible to suppress the arc discharge between the electrodes 71 while increasing the voltage applied to the electrodes 71 to promote the generation of plasma.
  • FIG. 8 is a cross-sectional view schematically showing another example of the configuration of the electrode group 7.
  • the electrode 71 has a rectangular cross-sectional shape.
  • the width (that is, the height) of the electrodes 71 in the vertical direction is wider than the width in the arrangement direction of the electrodes 71 (here, the moving direction D1). Since the gas flows along the vertical direction in the electric field space between the electrodes 71, if the vertical width of the electrodes 71 is wide, the electric field can be applied to the gas for a longer period of time. As a result, plasma can be generated in a wider range in the vertical direction, and more active species can be generated.
  • the dielectric protection member 72 also has a rectangular cross section.
  • the width (that is, the height) of the dielectric protection member 72 in the vertical direction is also wider than the width in the arrangement direction. According to this, it is possible to arrange the flow of gas flowing along the vertical direction between the dielectric protection members 72.
  • the dielectric partition member 73 is not provided. In this case, by setting the width of the dielectric protection members 72 in the arrangement direction to be relatively wide, it is possible to suppress the arc discharge between the electrodes 71.
  • the areas of the plurality of openings 641 of the first plate-shaped body 64 in a plan view are substantially the same as each other (see FIG. 4), but are not necessarily limited to this.
  • the area of the opening 641 near the treatment liquid nozzle 4 may be smaller than the area of the opening 641 far from the treatment liquid nozzle 4.
  • FIG. 9 is a cross-sectional view schematically showing another example of the configuration of the nozzle head 3.
  • FIG. 9 shows another example of the AA cross section of FIG.
  • the area of the opening 641 in the gas dividing flow path 60b close to the processing liquid nozzle 4 in the moving direction D1 is the area of the opening 641 in the gas dividing flow path 60a far from the processing liquid nozzle 4 in the moving direction D1. Smaller than.
  • the first opening 641 one opening 641 in the gas dividing flow path 60b
  • the second opening 641 one opening 641 in the gas dividing flow path 60a
  • the distance between the first opening 641 and the processing liquid nozzle 4 in the moving direction D1 is shorter than the distance between the second opening 641 and the processing liquid nozzle 4 in the moving direction D1, and the area of the first opening 641 is the second opening 641. Is smaller than the area of.
  • the area of the opening 641 in the gas dividing flow path 60c near the processing liquid nozzle 4 in the moving direction D1 is smaller than the area of the opening 641 in the gas dividing flow path 60d far from the processing liquid nozzle 4 in the moving direction D1. ..
  • the flow velocity of the gas can be increased at a position close to the treatment liquid nozzle 4 in the moving direction D1. Therefore, more active species can be allowed to act more quickly on the treatment liquid landed on the main surface of the substrate W. As a result, the substrate W can be processed more uniformly while rapidly improving the processing capacity of the processing liquid.
  • FIG. 10 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 1 according to the second embodiment.
  • the substrate processing apparatus 1 according to the second embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment, except for the configuration of the unit main body 6.
  • the unit main body 6 accommodates the electrode group 7. That is, the electrode group 7 is provided inside the unit main body 6. Also in the example of FIG. 10, two electrode groups 7a and 7b are provided as the electrode group 7.
  • the electrode group 7a is provided inside the unit main body 6 on the downstream side of the gas dividing flow paths 60a and 60b.
  • the electrode group 7b is provided inside the unit main body 6 on the downstream side of the gas dividing flow paths 60c and 60d.
  • the unit body 6 further includes a shutter 65.
  • the shutter 65 is provided at the lower end of the side wall portion 62 on the downstream side of the electrode group 7.
  • the shutter 65 is controlled by the control unit 90 to open and close the outlet of the gas flow path 60 formed at the lower end of the side wall portion 62.
  • two shutters 65a and 65b are provided as the shutter 65.
  • the shutter 65a is provided on the downstream side of the electrode group 7a, and the shutter 65b is provided on the downstream side of the electrode group 7b.
  • the configuration of the shutter 65 is not particularly limited, an example thereof will be briefly described below.
  • FIG. 11 is a side sectional view schematically showing an example of the configuration in the vicinity of the outlet of the gas flow path 60.
  • the unit main body 6 is provided with the second plate-shaped body 66.
  • the second plate-shaped body 66 is provided on the downstream side of the gas flow path 60 with respect to the electrode group 7, and is provided in a posture in which the thickness direction thereof is along the vertical direction.
  • the two electrode groups 7a and 7b are provided, the two second plate-shaped bodies 66 are provided.
  • the peripheral edge of the second plate-shaped body 66 is connected to the side wall portion 62 of the unit main body 6 and the flow path partition portion 63b.
  • the second plate-shaped body 66 is formed with a plurality of openings 661 that serve as outlets for the gas flow path 60.
  • the opening 661 is also referred to as an outlet 661.
  • the plurality of outlets 661 penetrate the second plate-shaped body 66 in the thickness direction thereof.
  • the plurality of outlets 661 are arranged, for example, two-dimensionally in a plan view, and as a more specific example, they are arranged in a matrix.
  • Each outlet 661 has, for example, a circular shape in a plan view.
  • the shutter 65 switches the opening and closing of the outlet 661.
  • the shutter 65 has, for example, a plate shape, and is arranged in a posture in which the thickness direction thereof is along the vertical direction.
  • the shutter 65 is provided so as to overlap the second plate-shaped body 66, for example.
  • the shutter 65 is also provided with a plurality of openings 651.
  • the plurality of openings 651 penetrate the shutter 65 in the vertical direction.
  • the plurality of openings 651 are formed in the same arrangement as the outlet 661 in a plan view.
  • the plurality of openings 651 have, for example, a circular shape, and the diameter of the openings 651 is, for example, the diameter of the outlet 661 or more.
  • the shutter 65 is provided so as to be movable horizontally with respect to the second plate-shaped body 66.
  • the shutter 65 may reciprocate between a first position in which the plurality of openings 651 are displaced horizontally from the plurality of outlets 661 and a second position in which the plurality of openings 651 face the plurality of outlets 661, respectively. can.
  • a portion of the shutter 65 other than the opening 651 faces the plurality of outlets 661 and closes the outlet 661.
  • FIG. 11 shows a state in which the shutter 65 is stopped at the first position.
  • the opening 651 of the shutter 65 faces the corresponding outlet 661, and the outlet 661 connects to the exterior space through the corresponding opening 651. That is, the outlet 661 opens.
  • the drive unit 67 is controlled by the control unit 90 and can drive the shutter 65.
  • the drive unit 67 reciprocates the shutter 65 between the first position and the second position.
  • the drive unit 67 has a drive mechanism such as a ball screw mechanism or an air cylinder.
  • the shutter 65 may have a plate-like shape without an opening 651.
  • the drive unit 67 may reciprocate the shutter 65 between a position where the shutter 65 does not face the second plate-shaped body 66 in the vertical direction and a position where the shutter 65 faces the second plate-shaped body 66. good.
  • the shutter 65 closes the outlet 661, the gas supplied from the gas supply unit 50 stays in the gas flow path 60 of the unit main body 6. This makes it possible to increase the amount of active species (concentration of active species) in the gas flow path 60. Then, by opening the outlet 661 by the shutter 65 in this state, more active species can be discharged from the outlet 661 of the plasma generation unit 5.
  • step S3 An example of the operation of the substrate processing apparatus 1 according to the second embodiment is the same as in FIG. 7.
  • step S3 the valves 52a and 52b are first opened with the shutter 65 closing the outlet 661 and the valve 46 closed.
  • gas is supplied from the gas supply unit 50 to the plasma generation unit 5 prior to the supply of the treatment liquid.
  • This gas stays in the gas flow path 60.
  • the power supply 80 applies a voltage to the electrode 71.
  • a part of the gas is ionized in the electric field space around the electrode group 7 to generate plasma. Active species are also generated when this plasma is generated. Since the shutter 65 is closed, the gas staying in the electric field space is affected by the electric field for a relatively long period of time, so that more plasma is generated and more active species are generated when the plasma is generated. Will be done.
  • the valve 46 is opened to supply the processing liquid from the processing liquid nozzle 4 to the main surface of the substrate W
  • the shutter 65 is opened to supply the gas to the main surface of the substrate W. Is reciprocated along the movement direction D1.
  • the shutter 65 is opened, more active species staying in the gas flow path 60 flow out toward the main surface of the substrate W. Therefore, more active species act on the treatment liquid on the main surface of the substrate W and the main surface of the substrate W. Thereby, the processing capacity of the processing liquid can be further improved.
  • the number of active species that act directly on the main surface of the substrate W also increases. As a result, the processing time of the substrate W can be further shortened.
  • the active species can be more uniformly supplied to the main surface of the substrate W.
  • the shutter 65 may be opened intermittently. That is, the opening and closing of the shutter 65 may be alternately switched at predetermined time intervals.
  • the gas stays in the gas flow path 60, so that more active species are generated, and when the shutter 65 opens the outlet 661, many of the active species are gas. Can be supplied to the main surface of the substrate W from the outlet 661 along the flow of the above.
  • the electrode group 7 is provided at a position farther from the substrate W. Therefore, the plasma generated in the electric field space around the electrode group 7 does not easily reach the substrate W. Therefore, damage to the substrate W due to plasma can be suppressed.
  • the areas of the plurality of outlets 661 of the second plate-shaped body 66 in a plan view may be substantially the same as each other, or for example, the area of the outlet 661 close to the treatment liquid nozzle 4 is far from the treatment liquid nozzle 4. It may be smaller than the area of the outlet 661.
  • FIG. 12 is a cross-sectional view schematically showing another example of the configuration of the nozzle head 3.
  • FIG. 12 shows a BB cross section of FIG.
  • the plurality of outlets 661 of each second plate-shaped body 66 are arranged in a plurality of rows (five rows in the example of the figure) in the moving direction D1.
  • the area of the three rows of outlets 661 closer to the treatment liquid nozzle 4 in the moving direction D1 is smaller than the area of the two rows of outlets 661 farther from the treatment liquid nozzle 4 than the three rows.
  • the first outlet 661 one outlet 661 belonging to the three rows
  • the second outlet 661 one outlet 661 belonging to the two rows
  • the distance between the first outlet 661 and the processing liquid nozzle 4 in the moving direction D1 is shorter than the distance between the second outlet 661 and the processing liquid nozzle 4 in the moving direction D1, and the area of the first outlet 661 is the first. It is smaller than the area of the 2 outlet 661.
  • the flow velocity of the gas can be further increased at a position closer to the treatment liquid nozzle 4 in the moving direction D1. Therefore, more active species can be allowed to act more quickly on the treatment liquid immediately after landing on the main surface of the substrate W.
  • An example of the configuration of the substrate processing apparatus 1 according to the third embodiment has the same configuration as the substrate processing apparatus 1 according to the first or second embodiment except for the electrode group 7.
  • the electric field strength distribution in the electric field space is adjusted. Specifically, the electrode group 7 applies an electric field with a higher electric field strength in a space close to the treatment liquid nozzle 4, and applies an electric field with a lower electric field strength in a space far from the treatment liquid nozzle 4.
  • FIG. 13 is a plan view schematically showing another example of the configuration of the electrode group 7. Also in the example of FIG. 13, four electrodes 71a to 71d are provided as the plurality of electrodes 71.
  • the electrodes 71a to 71d are arranged side by side in this order from the side closer to the treatment liquid nozzle 4 in the moving direction D1. That is, the electrode 71a is closest to the treatment liquid nozzle 4, and the electrode 71d is farthest from the treatment liquid nozzle 4. Therefore, the distance between the electric field space formed by the electrodes 71a and 71b and the treatment liquid nozzle 4 is shorter than the distance between the electric field space formed by the electrodes 71b and 71c, and the electric field formed by the electrodes 71b and 71c. The distance between the space and the processing liquid nozzle 4 is shorter than the distance between the electric field space formed by the electrodes 71c and 71d. Further, here, the distance between the electrodes 71a to 71d is almost the same as each other.
  • a resistor 83 is provided between the electrode 71c and the first output end 81 of the power supply 80.
  • the resistor 83 is not provided between the electrode 71a and the first output end 81 of the power supply 80. That is, the resistance value between the electrode 71a near the processing liquid nozzle 4 and the first output end 81 is smaller than the resistance value between the electrode 71c far from the processing liquid nozzle 4 and the first output end 81.
  • the magnitude of the voltage between the electrodes 71a and 71b is larger than the magnitude of the voltage between the electrodes 71b and 71c. Therefore, an electric field is applied to the electric field space between the electrodes 71a and 71b with an electric field strength higher than the electric field strength of the electric field space between the electrodes 71b and 71c.
  • the resistance 83 is not provided between the electrodes 71b and 71d and the second output end 82 of the power supply 80, and the resistance value between the electrodes 71b and the second output end 82 is It is almost the same as the resistance value between the electrode 71d and the second output end 82. Therefore, the magnitude of the voltage between the electrodes 71b and 71c is almost the same as the magnitude of the voltage between the electrodes 71c and 71d. Therefore, the electric field strength of the electric field space between the electrodes 71c and 71d is substantially the same as the electric field strength of the electric field space between the electrodes 71b and 71c.
  • an electric field having a high electric field strength acts on the gas passing through the electric field space between the electrodes 71a and 71b near the treatment liquid nozzle 4. Therefore, more plasma is generated near the treatment liquid nozzle, and more active species are generated.
  • An electric field with a lower electric field strength acts on the gas passing through the electric field space between the electrodes 71b to 71c far from the treatment liquid nozzle 4. Therefore, less active species are produced at a position far from the treatment liquid nozzle 4.
  • the third embodiment many active species can be generated at a position close to the treatment liquid nozzle 4. Therefore, more active species can be more quickly acted on the treatment liquid discharged from the treatment liquid nozzle 4 and landed on the main surface of the substrate W. Therefore, the processing capacity of the processing liquid can be quickly improved.
  • the electrode 71d may also be connected to the second output end 82 of the power supply 80 via the resistor 83. According to this, the electric field strength of the electric field space between the electrodes 71b and 71c can be made higher than the electric field strength of the electric field space between the electrodes 71b and 71c.
  • FIG. 14 is a plan view schematically showing another example of the configuration of the electrode group 7.
  • power supplies 80a and 80b are provided as the power supply 80.
  • the electrode 71a is connected to the first output end 81 of the power supply 80a
  • the electrode 71b is connected to the second output end 82 of the power supply 80a
  • the electrode 71c is connected to the first output end 81 of the power supply 80b
  • the electrode 71d is connected. It is connected to the second output terminal 82 of the power supply 80b.
  • the electrodes 71a and 71b close to the treatment liquid nozzle 4 are connected to the power supply 80a, and the electrodes 71c and 71d far from the treatment liquid nozzle 4 are connected to the power supply 80b different from the power supply 80a.
  • the voltage between the electrodes 71a and 71b and the voltage between the electrodes 71c and 71d can be controlled independently of each other.
  • the power supply 80a outputs a voltage larger than that of the power supply 80b.
  • the electric field strength in the electric field space between the electrodes 71a and 71b near the treatment liquid nozzle 4 can be made higher than the electric field strength in the electric field space between the electrodes 71c and 71d far from the treatment liquid nozzle 4.
  • FIG. 15 is a plan view schematically showing another example of the configuration of the electrode group 7.
  • the electrodes 71a and 71c are connected to the first output terminal 81 of the power supply 80, and the electrodes 71b and 71d are connected to the second output terminal 82 of the power supply 80.
  • the magnitudes of the voltages applied between the electrodes 71 are substantially the same.
  • the distance between the electrodes 71 becomes narrower as it approaches the treatment liquid nozzle 4.
  • the spatial density of the electrode 71 increases as it approaches the treatment liquid nozzle 4.
  • the distance between the electrodes 71a and 71b is narrower than the distance between the electrodes 71b and 71c
  • the distance between the electrodes 71b and 71c is narrower than the distance between the electrodes 71c and 71d.
  • an electric field can be applied to the voltage space between the electrodes 71a and 71b near the processing liquid nozzle 4 with a higher electric field strength.
  • an electric field is applied to the voltage space between the electrodes 71b and 71c with an electric field strength lower than the electric field strength in the voltage space between the electrodes 71a and 71b.
  • an electric field is applied to the electric field space between the electrodes 71c and 71d with an electric field strength lower than the electric field strength of the electric field space between the electrodes 71b and 71c.
  • the substrate processing apparatus 1 according to the fourth embodiment has the same configuration as the substrate processing apparatus 1 according to the first or second embodiment, except for the plasma generation unit 5.
  • FIG. 16 is a diagram schematically showing an example of the configuration of the nozzle head 3, and shows a cross section taken along the line AA of FIG.
  • the side wall portion 62 of the unit main body 6 has a cylindrical shape surrounding the treatment liquid nozzle 4.
  • the upper end of the side wall portion 62 is connected to the upper surface portion 61 of the unit main body 6, and the upper surface portion 61 has, for example, a circular shape in a plan view.
  • the internal space of the upper surface portion 61 and the side wall portion 62 of the unit main body 6 corresponds to the gas flow path 60.
  • the flow path partition portion 63 partitions the gas flow path 60 into a plurality of gas split flow paths 60a and 60b in the radial direction.
  • the flow path partition portion 63 also has a cylindrical shape surrounding the treatment liquid nozzle 4, and is provided between the treatment liquid nozzle 4 and the side wall portion 62. That is, the inner diameter of the flow path partition portion 63 is larger than the outer diameter of the processing liquid nozzle 4, and the outer diameter of the flow path partition portion 63 is smaller than the inner diameter of the side wall portion 62.
  • the upper end of the flow path partition portion 63 is connected to the lower surface of the upper surface portion 61.
  • the gas dividing flow paths 60a and 60b have an annular shape in a plan view, and the gas dividing flow path 60a is located radially inside the gas dividing flow path 60b.
  • Gas is supplied to the gas dividing flow paths 60a and 60b from the inflow port 611 formed on the upper surface portion 61, respectively.
  • the gas split flow is such that the flow velocity of the gas flowing through the gas split flow path 60a near the treatment liquid nozzle 4 is higher than the flow velocity of the gas flowing through the gas split flow path 60b far from the treatment liquid nozzle 4.
  • the gas flow rate in the paths 60a and 60b may be adjusted.
  • the first plate-like body 64 has an annular plate-like shape, and is arranged in a posture in which the thickness direction thereof is along the vertical direction.
  • the first plate-shaped body 64 is provided between the side wall portion 62 and the treatment liquid nozzle 4.
  • the first plate-shaped body 64 is provided with a plurality of openings 641.
  • the plurality of openings 641 are two-dimensionally arranged, and the gas flowing through the gas dividing flow paths 60a and 60b passes through the plurality of openings 641 so that the gas is more uniformly supplied to the electrode group 7.
  • FIG. 17 is a plan view schematically showing an example of the configuration of the electrode group 7.
  • the electrode group 7 also has a plurality of electrodes 71, and each electrode 71 has an elongated shape long in the longitudinal direction thereof.
  • the plurality of electrodes 71 are arranged along a horizontal direction (here, the moving direction D1) orthogonal to the longitudinal direction thereof.
  • six electrodes 71a to 71f are provided as a plurality of electrodes 71.
  • the electrodes 71a to 71f are provided in this order from one side to the other side in the arrangement direction (here, the moving direction D1).
  • the electrodes 71a to 71c are located on one side with respect to the treatment liquid nozzle 4, and the electrodes 71d to 71f are located on the other side with respect to the treatment liquid nozzle 4.
  • the electrodes 71a, 71c, 71e arranged in odd numbers from one side in the arrangement direction are connected to the first output terminal 81 of the power supply 80, and the electrodes 71b, 71d, 71f arranged in even numbers are the second outputs of the power supply 80. Connected to the end 82. In the example of FIG. 17, one end of the electrodes 71a, 71c, 71e in the longitudinal direction is connected to each other via the connecting portion 711a.
  • the connecting portion 711a has an arcuate plate shape, and is integrally formed of, for example, the electrodes 71a, 71c, 71e with the same material.
  • the ends of the electrodes 71b, 71d, 71f on the other side in the longitudinal direction are connected to each other via the connecting portion 711b.
  • the connecting portion 711b has an arcuate plate shape, and is integrally formed of, for example, the electrodes 71b, 71d, 71f with the same material.
  • the connecting portions 711a and 711b are connected to the first output end 81 and the second output end 82, respectively, via lead wires.
  • the lengths of the electrodes 71 in the longitudinal direction are different from each other. This is because the electrode group 7 only needs to apply an electric field to the gas flowing in from the gas flow path 60, so that the electrode 71 needs to be provided only in the passing region through which the gas passes. That is, in the example of FIG. 16, the gas dividing flow paths 60a and 60b are included in the circular region as a whole in a plan view, and this circular region corresponds to an approximate passage region. Therefore, it suffices for the electrode group 7 to be able to apply an electric field to the circular region in a plan view, and it is not highly necessary to apply an electric field to the outside of this circular region.
  • the length of the electrode 71 is appropriately adjusted so that the tip of the electrode 71 does not protrude to the outside of the circular region, and the generation of an unnecessary electric field is suppressed.
  • the electrode 71 becomes longer as it is closer to the treatment liquid nozzle 4.
  • a dielectric partition member 73 is provided between the electrodes 71 and is connected to the frame body 74.
  • the frame body 74 has an annular shape and is connected to the side wall portion 62 of the unit main body 6.
  • the gas flow path 60 has a cylindrical shape surrounding the treatment liquid nozzle 4 (see FIG. 16), and the electrode group 7 also substantially surrounds the treatment liquid nozzle 4. It is provided all around (see FIG. 17). Therefore, the plasma generation unit 5 can supply gas toward the main surface of the substrate W on the entire circumference around the processing liquid nozzle 4. According to this, the active species can be more isotropically supplied to the substrate W.
  • the gas flow path 60 and a part of the electrode group 7 are provided adjacent to the processing liquid nozzle 4 in the moving direction D1, and specifically, the processing liquid nozzle 4 is provided in the moving direction D1. It is provided on both sides. Therefore, during the reciprocating movement of the nozzle head 3, the active species can act on the treatment liquid immediately after the treatment liquid has landed on the main surface of the substrate W.
  • the substrate processing apparatus 1 has been described in detail, but the above description is an example in all aspects, and the substrate processing apparatus 1 is not limited thereto. It is understood that a myriad of variants not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and the modifications can be appropriately combined or omitted as long as they do not conflict with each other.
  • the flow path partition portion 63 may not be provided.
  • the number thereof may be one or more.
  • the flow path partition portion 63 may divide the gas flow path into a gas dividing flow path close to the processing liquid nozzle 4 and a gas dividing flow path far from the processing liquid nozzle 4, and the partitioning direction thereof is other than the moving direction D1. May be horizontal.
  • the arrangement direction of the electrodes 71 is not limited to the moving direction D1, and may be arranged in any direction in a plan view.
  • the electrodes 71 do not necessarily have to be provided on the same plane, and the positions of the electrodes 71 in the vertical direction may be different from each other.
  • the processing for the substrate W is not necessarily limited to the resist removing processing.
  • it can be applied to all treatments in which the treatment capacity of the treatment liquid can be improved by the active species.
  • Plasma generation unit 50 Gas supply unit 6 Unit body 60 Gas flow path 60a to 60d Gas split flow path 62, 62a to 62c Flow path partition 63 Dielectric partition Members 64, 64a, 64b 1st plate-like body 641 openings (1st opening, 2nd opening) 65 Shutters 66, 66a, 66b Second plate-shaped body 661 Outlet (first outlet, second outlet) 7 Electrode group 71 Electrode D1 Movement direction Q1 Rotation axis W Substrate

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  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
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  • Manufacturing Of Printed Wiring (AREA)
PCT/JP2021/029102 2020-08-31 2021-08-05 基板処理装置 WO2022044756A1 (ja)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005144233A (ja) * 2003-11-11 2005-06-09 Hitachi High-Tech Electronics Engineering Co Ltd 基板処理方法、基板処理装置、及び基板製造方法
JP2008053728A (ja) * 2006-08-24 2008-03-06 Semes Co Ltd 基板を処理する装置及びその方法
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP2012049476A (ja) * 2010-08-30 2012-03-08 Fujifilm Corp パターン形成方法及びパターン形成装置並びに複合型ヘッド
JP2020004561A (ja) * 2018-06-27 2020-01-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005144233A (ja) * 2003-11-11 2005-06-09 Hitachi High-Tech Electronics Engineering Co Ltd 基板処理方法、基板処理装置、及び基板製造方法
JP2008053728A (ja) * 2006-08-24 2008-03-06 Semes Co Ltd 基板を処理する装置及びその方法
JP2010177543A (ja) * 2009-01-30 2010-08-12 Ebara Corp 基板処理方法及び基板処理装置
JP2012049476A (ja) * 2010-08-30 2012-03-08 Fujifilm Corp パターン形成方法及びパターン形成装置並びに複合型ヘッド
JP2020004561A (ja) * 2018-06-27 2020-01-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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