WO2022042336A1 - 半导体反应腔室及半导体加工设备 - Google Patents

半导体反应腔室及半导体加工设备 Download PDF

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Publication number
WO2022042336A1
WO2022042336A1 PCT/CN2021/112501 CN2021112501W WO2022042336A1 WO 2022042336 A1 WO2022042336 A1 WO 2022042336A1 CN 2021112501 W CN2021112501 W CN 2021112501W WO 2022042336 A1 WO2022042336 A1 WO 2022042336A1
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Prior art keywords
reaction chamber
accommodating cavity
wiring
cavity
base body
Prior art date
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PCT/CN2021/112501
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English (en)
French (fr)
Inventor
刘建
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to JP2023509533A priority Critical patent/JP2023535642A/ja
Priority to KR1020237003493A priority patent/KR102582399B1/ko
Publication of WO2022042336A1 publication Critical patent/WO2022042336A1/zh
Priority to US18/174,318 priority patent/US20230223280A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the technical field of semiconductor processing equipment, in particular to a semiconductor reaction chamber and semiconductor processing equipment.
  • Electrostatic chucks are widely used in the fabrication of integrated circuits such as plasma etching, physical vapor deposition, chemical vapor deposition, and the like.
  • the electrostatic chuck is arranged in the semiconductor reaction chamber of the semiconductor processing equipment.
  • the electrostatic chuck is used to fix and support the wafer.
  • the electrostatic chuck can also provide DC bias for the wafer and control the temperature of the wafer.
  • the electrostatic chuck includes a base body and a functional layer.
  • the functional layer is generally fixed on the base body through an adhesive layer.
  • the base body is provided with a plurality of wiring channels for the functional wiring to pass through, so that the functional wiring can be connected with the functional layer.
  • the functional wiring includes, for example, detection wiring and control wiring, etc., the temperature detection device can detect the temperature of the wafer carried on the electrostatic chuck through the detection wiring; the controller can control the heater in the functional layer through the control wiring , so as to control the temperature of the wafer on the electrostatic chuck.
  • the interior of the semiconductor reaction chamber in the semiconductor processing equipment is usually in a vacuum state, while the above-mentioned wiring channel in the substrate is in an atmospheric pressure state, and the pressure difference between the interior of the chamber and the wiring channel will cause static electricity.
  • Multiple components of the chuck generate force, which easily damages the adhesion between the substrate and the functional layer, thereby affecting the overall installation effect of the electrostatic chuck.
  • the invention discloses a semiconductor reaction chamber and semiconductor processing equipment to solve the problem of low connection reliability of the components of the electrostatic chuck due to the unbalanced air pressure inside the semiconductor reaction chamber and the accommodating cavity of the electrostatic chuck.
  • the present invention adopts the following technical solutions:
  • a semiconductor reaction chamber comprising:
  • the cavity encloses an inner cavity
  • the electrostatic chuck is located in the inner cavity, the electrostatic chuck includes a base body and a functional layer arranged on the base body, and the base body and the functional layer are fixed by bonding, and the A wiring channel is opened in the base body, the functional layer covers the port of the wiring channel, and together with the base body surrounds the wiring channel to form an accommodation cavity;
  • An air pressure adjusting device communicates with the accommodating cavity and is used to balance the air pressure in the accommodating cavity and the air pressure in the inner cavity.
  • a semiconductor processing equipment includes the above-mentioned semiconductor reaction chamber.
  • the air pressure in the accommodating cavity can be adjusted It can be equal to the air pressure in the inner cavity, so as to avoid damage to the adhesion between the matrix and the functional layer due to the pressure difference between the inner cavity and the accommodating cavity, thereby improving the connection stability between the matrix and the functional layer. Improve the life of the electrostatic chuck.
  • FIG. 1 is a cross-sectional view of a semiconductor reaction chamber disclosed in an embodiment of the present invention.
  • FIG. 2 is a partial cross-sectional view of a semiconductor reaction chamber disclosed in an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an electrostatic chuck in a semiconductor reaction chamber disclosed in an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of FIG. 3 under another viewing angle
  • FIG. 5 is a cross-sectional view of a connecting flange in a semiconductor reaction chamber disclosed in an embodiment of the present invention.
  • 200-electrostatic chuck 210-base body, 211-wiring channel, 220-ceramic layer, 230-heating layer, 231-second through hole;
  • 400-extraction device 410-extraction mechanism, 420-first pipeline, 421-first switch valve, 430-pressure detection device, 450-connecting pipeline;
  • 500-inflatable device 500-inflatable device, 510-inflatable mechanism, 520-second pipeline, 521-second switch valve;
  • an embodiment of the present invention discloses a semiconductor reaction chamber.
  • the disclosed semiconductor reaction chamber is applied to semiconductor processing equipment.
  • the disclosed semiconductor reaction chamber includes a cavity 100 and an electrostatic chuck. 200, functional wiring 300 and air pressure regulating device.
  • the cavity 100 defines an inner cavity 110 in which the wafer is processed.
  • the top of the cavity 100 may be provided with a nozzle 120 that communicates with the inner cavity 110 , and the process gas may be introduced into the inner cavity 110 through the nozzle 120 , and the process gas will physically interact with the wafer in the inner cavity 110 . chemical reaction to complete the processing of the wafer.
  • the electrostatic chuck 200 is located in the inner cavity 110 and is used to support and fix the wafer. Specifically, the electrostatic chuck 200 uses electrostatic adsorption to realize the fixation of the wafer.
  • a lower electrode housing 900 is disposed below the electrostatic chuck 200 , and the lower electrode housing 900 is used to support the electrostatic chuck 200 and provide an installation basis for the functional wiring 300 and other components.
  • the electrostatic chuck 200 includes a base body 210 and a functional layer disposed on the base body 210, wherein the base body 210 can provide a mounting position for the functional layer.
  • the base body 210 and the functional layer are fixed by bonding, for example,
  • the base body 210 and the functional layer may be bonded by adhesives such as super glue or hot melt adhesive.
  • a wiring channel 211 is opened in the base body 210 , the functional layer covers the port of the wiring channel 211 , and the base body 210 surrounds the wiring channel 211 to form a receiving cavity.
  • the functional wiring 300 passes through the wiring channel 211 and is in contact with the portion of the functional layer exposed at the port of the wiring channel 211 .
  • one end of the functional wiring 300 is located outside the cavity 100 and can be connected to external devices such as controllers, temperature detection devices, etc., and the other end of the functional wiring 300 can pass through the wiring
  • the channel 211 is in contact with the functional layer, so that the equipment located outside the cavity 100 can perform operations such as heating and temperature detection on the wafer on the surface of the electrostatic chuck 200 through the functional wiring 300 .
  • the number of wiring channels 211 may be multiple, so that different functional wirings 300 can pass through different wiring channels 211 , so that the above operations can be performed simultaneously and mutual interference can be avoided.
  • the air pressure adjusting device communicates with the above-mentioned accommodating cavity, and is used for balancing the air pressure in the accommodating cavity and the air pressure in the inner cavity.
  • the air pressure in the accommodating cavity can be made equal to the air pressure in the inner cavity 110, so that the adhesiveness between the substrate 210 and the functional layer can be prevented from being damaged due to the pressure difference between the inner cavity 110 and the accommodating cavity.
  • the connection stability between the base body 210 and the functional layer is improved, and the service life of the electrostatic chuck 200 is improved.
  • the above-mentioned air pressure regulating device includes an air suction device 400 and/or an inflation device 500 .
  • the air extraction device 400 communicates with the accommodating cavity, and the air extraction device 400 is used to vacuum the accommodating cavity.
  • the air extraction device The air extraction port 400 can be sealedly connected to the opening of the accommodating cavity.
  • the air extraction device 400 can extract at least part of the gas in the accommodating cavity, so that the air pressure in the accommodating cavity can be equal to the air pressure in the inner cavity 110 .
  • the inner cavity 110 is usually in a vacuum state.
  • the air extraction device 400 can be controlled to open, so as to extract the air in the accommodating cavity, so that the air pressure in the accommodating cavity is also in a vacuum state.
  • the inflating device 500 is in communication with the accommodating cavity, and the inflating device 500 is used to inflate the accommodating cavity.
  • the air outlet of the inflating device 500 can be sealedly connected with the opening of the accommodating cavity.
  • the inflator 500 can be controlled to open, so as to inflate the accommodating cavity, so that the air pressure in the accommodating cavity is also in the atmospheric pressure state, thereby making the air pressure in the accommodating cavity It can be equal to the air pressure of the inner cavity 110 .
  • the semiconductor reaction chamber disclosed in the embodiment of the present invention at least part of the air in the accommodating cavity can be drawn out through the air extraction device 400, or gas can be introduced into the accommodating cavity through the inflating device 500, so that The air pressure in the accommodating cavity can be equal to the air pressure in the inner cavity 110, so that the adhesiveness between the base body 210 and the functional layer can be prevented from being damaged due to the pressure difference between the inner cavity 110 and the accommodating cavity, and the adhesion between the base body 210 and the functional layer can be improved.
  • the connection stability between the functional layers increases the service life of the electrostatic chuck.
  • the air pressure in the accommodating cavity can be always equal to the air pressure in the inner cavity 110 through the cooperation between the air suction device 400 and the inflating device 500, so as to avoid the interference between the inner cavity 110 and the accommodating cavity 110.
  • the air extraction device 400 or the inflation device 500 may also be provided independently according to specific needs.
  • one air extraction device 400 can communicate with multiple accommodating cavities, so that the air in the multiple accommodating cavities can be extracted through one air extraction device 400, thereby improving the Utilization rate of the air extraction device 400 ; similarly, one inflatable device 500 may communicate with multiple accommodating cavities, so that one inflatable device 500 can inflate multiple accommodating cavities, thereby improving the utilization rate of the inflatable device 500 .
  • the air extraction device 400 may include an air extraction mechanism 410 and a first pipeline 420 , and the air extraction mechanism 410 may be a vacuum pump or a fan.
  • the air extraction mechanism 410 may be disposed outside the inner cavity 110 , and the air extraction mechanism 410 may communicate with the accommodating cavity through the first pipe 420 .
  • the first pipe 420 is used to communicate the air extraction mechanism 410 with the accommodating cavity.
  • the first end of the first pipe 420 may be located outside the inner cavity 110 and connected to the air extraction port of the air extraction mechanism 410
  • the second end of the first pipe 420 can extend into the inner cavity 100 and communicate with the opening of the accommodating cavity.
  • the first end of the first pipe 420 can be sealedly connected with the suction port of the suction mechanism 410, and the second end of the first pipe 420 can be sealed with the suction port of the suction mechanism 410 to prevent The gas leaks and affects the pumping effect of the pumping mechanism 410 .
  • a sealant may be provided between the first end of the first pipe 420 and the suction port of the suction mechanism 410 and between the second end of the first pipe 420 and the opening of the accommodating cavity, so as to achieve better sealing effect, so that the air-pumping mechanism 410 has a better air-pumping effect on the accommodating cavity.
  • the first pipe 420 can also make the installation flexibility of the air extraction mechanism 410 better. Specifically, the extension effect of the first pipe 420 enables the air extraction mechanism 410 to be installed in multiple positions outside the cavity 100 .
  • the first pipe 420 may be a flexible pipe, so as to better improve the installation flexibility of the air extraction mechanism 410 .
  • a first on-off valve 421 may be provided on the first pipeline 420.
  • the air extraction mechanism 410 can pass through the first pipeline 420 to remove at least one part in the accommodating cavity. Part of the air is drawn out so that the air pressure in the accommodating cavity is equal to the air pressure in the inner cavity 110 ; when the first switch valve 421 is closed, the air pressure in the accommodating cavity can be maintained in the above state. This way is convenient for operation, so that the air pressure in the accommodating cavity can be easily equal to the air pressure in the inner cavity 110 .
  • the first on-off valve 421 is located outside the cavity 100 for easy control.
  • the inflation device 500 may include an inflation mechanism 510 and a second pipeline 520 .
  • the inflation mechanism 510 is, for example, a nitrogen gas supply mechanism, and the inflation mechanism 510 may be disposed between the inner cavity 110 .
  • the inflation mechanism 510 may communicate with the accommodating cavity through the second pipe 520 .
  • the second pipe 520 is used to communicate the inflation mechanism 510 with the accommodating cavity.
  • the first end of the second pipe 520 may be located outside the inner cavity 110 and communicated with the air outlet of the inflation mechanism 510.
  • the second end of the second pipe 520 may extend into the inner cavity 100 and communicate with the opening of the receiving cavity.
  • the first end of the second pipe 520 can be sealedly connected with the air outlet of the inflation mechanism 510, and the second end of the second pipe 520 can be sealed with the inflation port of the inflation mechanism 510 to prevent gas leakage This affects the inflation effect of the inflation mechanism 510 .
  • a sealant may be provided between the first end of the second pipe 520 and the inflating port of the inflating mechanism 510 and between the second end of the second pipe 520 and the opening of the accommodating cavity, so as to achieve a better sealing effect and The air pumping effect of the inflating mechanism 510 on the accommodating cavity is better.
  • the second pipe 520 can also make the installation flexibility of the inflation mechanism 510 better. Specifically, the extension effect of the second pipe 520 enables the inflation mechanism 510 to be installed in multiple positions outside the cavity 100 .
  • the second pipe 520 may be a flexible pipe, so as to better improve the installation flexibility of the inflation mechanism 510 .
  • a second on-off valve 521 may be provided on the second pipeline 520.
  • the inflation mechanism 510 can inflate the accommodating cavity through the second pipeline 520 to
  • the air pressure in the accommodating cavity is made equal to the air pressure in the inner cavity 110; when the second switch valve 521 is closed, the air pressure in the accommodating cavity can be maintained in the above state. This way is convenient for operation, so that the air pressure in the accommodating cavity can be easily equal to the air pressure in the inner cavity 110 .
  • the second on-off valve 521 is located outside the cavity 100 for easy control.
  • the semiconductor reaction chamber disclosed in the embodiment of the present invention may further include a pressure detection device 430, the pressure detection device 430 may communicate with the accommodating cavity, and the pressure detection device 430 is used to detect the air pressure in the accommodating cavity.
  • the pressure detection device 430 can display the detected data, so as to facilitate the staff to control the air pumping mechanism 410 and the inflation mechanism 510 to work, so that the air pressure in the accommodating cavity can be equal to the air pressure in the inner cavity 110 .
  • This method is convenient for the operator to operate, so that the operator can easily adjust the air pressure in the accommodating cavity, so that the air pressure in the accommodating cavity and the air pressure in the inner cavity 110 can be easily equalized.
  • the semiconductor reaction chamber disclosed in the embodiment of the present invention may further include a mounting portion 600 , the mounting portion 600 may be disposed in the lower electrode housing 900 , the base 210 may be disposed on the mounting portion 600 , and the mounting portion 600 can facilitate the electrostatic chuck 200 At the same time, the mounting portion 600 may be provided with a mounting hole 610 communicating with the accommodating cavity.
  • the installation hole 610 can be sealedly connected with the opening of the accommodating cavity, the air extraction device 400 can be communicated with the accommodating cavity through the installation hole 610, and the air extraction port of the air extraction device 400 and the installation hole 610 can be sealedly connected to prevent gas leakage from affecting the air extraction device 400 pumping effect.
  • the installation portion 600 makes it easier for the air extraction device 400 to communicate with the accommodating cavity, thereby facilitating the installation of the above components.
  • the inflatable device 500 can also communicate with the accommodating cavity through the installation hole 610 , and the air suction port of the inflatable device 500 and the installation hole 610 can be sealedly connected to prevent gas leakage from affecting the inflation effect of the inflatable device 500 .
  • the installation part 600 makes it easier for the inflator 500 to communicate with the accommodating cavity, thereby facilitating the installation of the above components.
  • the air pressure adjusting device includes an air extraction device 400 and an inflatable device 500
  • the air extraction device 400 and the inflatable device 500 may communicate with the accommodating cavity through two installation holes 610 respectively.
  • the semiconductor reaction chamber disclosed in the embodiment of the present invention may further include a connecting flange 700, and the connecting flange 700 may be disposed on the side of the mounting portion 600 away from the electrostatic chuck 200, and the connecting flange 700 may be connected to
  • the flange 700 may be provided with a gas channel 710, the gas channel 710 may be communicated with the mounting hole 610, and the gas channel 710 and the mounting hole 610 may be sealedly connected, and the air extraction device 400 may be communicated with the gas channel 710, and the extraction of the air extraction device 400.
  • the gas port and the gas channel 710 can be connected in a sealed manner.
  • the air extraction device 400 communicates with the accommodating cavity through the air passage 710 and the installation hole 610 in sequence.
  • the connection flange 700 With the connection flange 700, the installation function wiring can be improved, the connection stability between the air extraction device 400 and the accommodating cavity can be improved, and the air pressure adjustment effect in the accommodating cavity can be improved.
  • the inflatable device 500 can also be communicated with the gas channel 710 , and the inflation port of the inflatable device 500 and the gas channel 710 can be sealedly connected.
  • the inflator 500 communicates with the accommodating cavity through the gas channel 710 and the installation hole 610 in sequence.
  • the connection flange 700 With the connection flange 700, the installation function wiring can be improved, the connection stability between the inflator 500 and the accommodating cavity can be improved, and the air pressure adjustment effect in the accommodating cavity can be further improved.
  • the air pressure adjusting device includes the air pumping device 400 and the inflating device 500 , there are two installation holes 610 and two air passages 710 respectively, and they are provided correspondingly.
  • the side wall of the connecting flange 700 may be provided with a wiring hole 740 communicating with the gas channel 710, and the functional wiring 300 can be passed through the thread hole 740 .
  • This way can also prevent the functional wiring 300 from affecting the communication effect between the air extraction device 400 or the inflation device 500 and the connection flange 700 during the threading process.
  • the functional wiring 300 and the threading hole 740 can be connected in a sealed manner, so as to prevent gas leakage from affecting the effect of air extraction or inflation.
  • the air pressure adjustment device including the air extraction device 400 and the inflation device 500 as an example, and there are two accommodating chambers, as shown in FIG.
  • the second pipes 520 in the device 500 are communicated with each other through the connecting pipes 450.
  • the air pumping mechanism 410 can communicate with the two gas passages 710 through the first pipes 420 and the connecting pipes 450, respectively, so that the two gas passages 710 can be connected to each other.
  • the air in the accommodating cavity can be extracted, thereby improving the utilization rate of the air extraction device 400; similarly, the inflator 500 can be communicated with the two gas passages 710 through the second pipeline 520 and the connecting pipeline 450, respectively, so that the two accommodating The cavity is inflated, so that the utilization rate of the inflator 500 can be improved.
  • other pipeline structures may also be used to realize that one air extraction device 400 communicates with multiple accommodating cavities, and one inflator 500 communicates with multiple accommodating cavities.
  • the semiconductor reaction chamber disclosed in the embodiment of the present invention may further include a sealing ring (not shown in the figure), the sealing ring may be disposed between the surfaces of the mounting portion 600 and the connecting flange 700 facing each other, and the sealing ring may be
  • the mounting hole 610 can be arranged around the gas channel 710 and the mounting hole 610 can be sealedly connected by a sealing ring.
  • the sealing ring can make the sealing effect between the gas channel 710 and the installation hole 610 better, so as to prevent the air from overflowing through the gap between the installation part 600 and the connection flange 700 .
  • the number of the above-mentioned sealing rings is the same as the respective numbers of the gas passages 710 and the installation holes 610 , and they are provided in a one-to-one correspondence.
  • the side of the installation portion 600 facing the connecting flange 700 may be provided with an annular groove 620 , the annular groove 620 may be disposed around the installation hole 610 , and part of the sealing ring may be located in the annular groove 620 .
  • the annular groove 620 can limit the position of the sealing ring, thereby preventing the sealing ring from being offset and affecting the sealing effect between the gas passage 710 and the installation hole 610 .
  • connection flange 700 may include a connected body portion 720 and a connecting portion 730 .
  • the above-mentioned sealing ring may be disposed between the opposite surfaces of the mounting portion 600 and the connecting portion 730 , and disposed around the mounting hole 610 .
  • the connecting portion 730 may be provided with a first through hole 731
  • the mounting portion 600 may be provided with a threaded hole
  • the fastening screw may pass through the first through hole 731 and be connected with the threaded hole.
  • this method can not only improve the connection reliability between the connecting flange 700 and the mounting part 600 , but also, when a sealing ring is provided between the connecting flange 700 and the mounting part 600 , By tightening the fastening screws, the sealing ring can be squeezed, so that the sealing effect between the gas channel 710 and the installation hole 610 is better.
  • the sealing ring can be a flexible member, so that the sealing effect between the gas channel 710 and the installation hole 610 can be better improved.
  • the functional layer includes, for example, a ceramic layer 220 and a heating layer 230 .
  • the ceramic layer 220 may be disposed on the heating layer 230
  • the heating layer 230 may be disposed on the substrate 210
  • the ceramic layer may be disposed on the base 210 . 220.
  • the heating layer 230 and the base body 210 can be fixed and connected in turn by means of bonding.
  • the functional wiring 300 includes a control wiring. One end of the control wiring can be connected to the first device 810. The other end of the control wiring can pass through the wiring channel 211 and can be electrically connected to the heating layer 230.
  • the first device 810 can control the heating layer 230 through the above-mentioned control wiring, so that the heating layer 230 can heat the wafer placed on the surface of the ceramic layer 220 .
  • the above-mentioned control wiring realizes electrical conduction between the heating layer 230 and the first device 810 , thereby facilitating the first device 810 to control the heating layer 230 to heat the wafer.
  • the above-mentioned first device 810 includes, for example, a heating power adjustment device and a controller.
  • the functional wiring 300 includes a detection wiring, and correspondingly, the heating layer 230 can be provided with a second through hole 231 that communicates with the wiring channel 211.
  • the second through hole 231 is communicated with the accommodating cavity, and one end of the detection wiring can be connected to The second device 820 is connected, and the other end of the detection wire may pass through the wiring channel 211 and the second through hole 231 in sequence, and may be in contact with the ceramic layer 220 .
  • the second device 820 includes, for example, a temperature measurement sensor (or includes a temperature measurement sensor and a controller), and the above-mentioned detection wiring can be the detection connection of the temperature measurement sensor, and the temperature measurement sensor is, for example, a thermocouple or a temperature measurement sensor.
  • the optical fiber and the accommodating cavity can pass the detection wiring of the temperature measuring sensor, so that the temperature measurement of the wafer can be realized.
  • the first device 810 and the second device 820 are both located outside the cavity 100, one end of the functional wiring 300 is electrically connected to the first device 810 and/or the second device 820, and the other end of the functional wiring 300 extends. into the inner cavity, and penetrate the wiring channel 211 to contact the functional layer.
  • the functional wiring 300 includes a detection wiring, such as a detection wiring of a temperature measuring sensor, the contact between the functional layer and the functional wiring 300 specifically means that the detection wiring is in contact with the ceramic layer 220 in the functional layer; if the functional wiring 300 includes Control wiring, the contact between the functional layer and the functional wiring 300 specifically refers to the electrical connection between the control wiring and the heating layer 230 in the functional layer. It can be changed adaptively, and the present invention is not particularly limited thereto.
  • an embodiment of the present invention further discloses a semiconductor processing equipment, and the disclosed semiconductor processing equipment has the semiconductor reaction chamber of any of the above-mentioned embodiments.

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Abstract

本发明公开一种半导体反应腔室及半导体加工设备，半导体反应腔室包括腔体、静电卡盘、功能接线和气压调节装置；腔体围成内腔；静电卡盘位于内腔中，静电卡盘包括基体和设置于基体上的功能层，且基体与功能层通过粘接固定，基体中开设有接线通道，功能层覆盖接线通道的端口，且与基体将接线通道围成容纳腔；功能接线穿过接线通道，且与功能层接触；气压调节装置与容纳腔连通，用于平衡容纳腔内的气压与所述内腔中的气压。本方案能够解决由于半导体反应腔室内部与静电卡盘的容纳腔内部的气压不均衡，导致静电卡盘各部件的连接可靠性较低的问题。

Description

半导体反应腔室及半导体加工设备 技术领域
本发明涉及半导体加工设备技术领域，尤其涉及一种半导体反应腔室及半导体加工设备。
背景技术
包括静电卡盘的半导体加工设备广泛地应用于诸如等离子刻蚀、物理气相沉积、化学气相沉积等集成电路的制造工艺中。静电卡盘设置于半导体加工设备的半导体反应腔室内，静电卡盘用于固定、支撑晶圆，同时，静电卡盘还能为晶圆提供直流偏压并控制晶圆的温度。
通常，静电卡盘包括基体和功能层，功能层一般通过粘接层固定在基体上，该基体中设置有多条接线通道，用于供功能接线穿过，以使该功能接线能够与功能层接触，该功能接线例如包括检测接线和控制接线等等，温度检测装置能够通过该检测接线检测承载于静电卡盘上的晶圆的温度；控制器能够通过该控制接线控制功能层中的加热器，进而实现对静电卡盘上的晶圆的温度进行控制。
但是，在具体的工作过程中，半导体加工设备中的半导体反应腔室内部通常处于真空状态，而基体中的上述接线通道内处于大气压状态，腔室内部与接线通道之间的压力差会对静电卡盘的多个部件产生力的作用，从而容易损坏基体与功能层之间的粘接性，进而影响静电卡盘整体的安装效果。
发明内容
本发明公开一种半导体反应腔室及半导体加工设备，以解决由于半导体反应腔室内部与静电卡盘的容纳腔内部的气压不均衡，导致静电卡盘各部件 的连接可靠性较低的问题。
为了解决上述问题，本发明采用下述技术方案：
一种半导体反应腔室，包括：
腔体，所述腔体围成内腔；
静电卡盘，所述静电卡盘位于所述内腔中，所述静电卡盘包括基体和设置于所述基体上的功能层，且所述基体与所述功能层通过粘接固定，所述基体中开设有接线通道，所述功能层覆盖所述接线通道的端口，且与所述基体将所述接线通道围成容纳腔；
功能接线，所述功能接线穿过所述接线通道，且与所述功能层接触；以及
气压调节装置，与所述容纳腔连通，用于平衡所述容纳腔内的气压与所述内腔中的气压。
一种半导体加工设备，包括上述半导体反应腔室。
本发明采用的技术方案能够达到以下有益效果：
本发明实施例公开的导体反应腔室及半导体加工设备的技术方案中，通过借助与容纳腔连通的气压调节装置，平衡容纳腔内的气压与内腔中的气压，可以使容纳腔内的气压能够与内腔中的气压相等，从而可以避免因内腔与容纳腔之间存在压力差而损坏基体与功能层之间的粘接性，进而可以提高基体与功能层之间的连接稳定性，提高静电卡盘的使用寿命。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本发明实施例公开的半导体反应腔室的剖视图；
图2为本发明实施例公开的半导体反应腔室的局部剖视图；
图3为本发明实施例公开的半导体反应腔室中，静电卡盘的结构示意图；
图4为图3在另一种视角下的结构示意图；
图5为本发明实施例公开的半导体反应腔室中，连接法兰的剖视图。
附图标记说明：
100-腔体、110-内腔、120-喷嘴；
200-静电卡盘、210-基体、211-接线通道、220-陶瓷层、230-加热层、231-第二通孔；
300-功能接线；
400-抽气装置、410-抽气机构、420-第一管道、421-第一开关阀、430-压力检测装置、450-连接管道；
500-充气装置、510-充气机构、520-第二管道、521-第二开关阀；
600-安装部、610-安装孔、620-环形凹槽；
700-连接法兰、710-气体通道、720-本体部、730-连接部、731-第一通孔、740-穿线孔；
810-第一设备、820-第二设备；
900-电极壳体。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
以下结合附图，详细说明本发明各个实施例公开的技术方案。
如图1～图5所示，本发明实施例公开一种半导体反应腔室，所公开的半导体反应腔室应用于半导体加工设备中，所公开的半导体反应腔室包括腔体100、静电卡盘200、功能接线300和气压调节装置。
腔体100围成内腔110，在该内腔110内对晶圆进行加工。具体的，如图1所示，腔体100的顶部可以开设有与内腔110连通的喷嘴120，工艺气体可以通过喷嘴120通入内腔110中，工艺气体在内腔110中与晶圆发生物理化学反应，从而完成对晶圆的加工。
如图1所示，静电卡盘200位于内腔110中，用于支撑和固定晶圆，具体地，静电卡盘200采用静电吸附的方式实现对晶圆的固定。在一些可选的实施例中，静电卡盘200的下方设置有下电极壳体900，该下电极壳体900用于支撑静电卡盘200，并为功能接线300以及其他组成部件提供安装基础。
如图2所示，静电卡盘200包括基体210和设置于基体210上的功能层，其中，基体210能够为功能层提供安装位置，具体的，基体210与功能层通过粘接固定，例如，基体210与功能层可以通过强力胶水或者热熔胶等粘接剂粘接。基体210中开设有接线通道211，功能层覆盖该接线通道211的端口，且与基体210将接线通道211围成容纳腔。功能接线300穿过接线通道211，且与功能层暴露在接线通道211的端口处的部分相接触。具体的，结合图1和图2所示，功能接线300的一端位于腔体100的外部，可以与外部的诸如控制器、温度检测装置等的设备相连，功能接线300的另一端可以穿过接线通道211，且与功能层接触，从而使位于腔体100外部的设备能够通过功能接线300对静电卡盘200表面的晶圆实现加热、温度检测等操作。可选地，接线通道211的数量可以为多个，以使不同的功能接线300能够从不同的接线通道211穿过，以使上述操作能够同时进行，且能够避免相互干扰。
气压调节装置与上述容纳腔连通，用于平衡该容纳腔内的气压与内腔中的气压。这样，可以使容纳腔内的气压能够与内腔110中的气压相等，从而 可以避免因内腔110与容纳腔之间存在压力差而损坏基体210与功能层之间的粘接性，进而可以提高基体210与功能层之间的连接稳定性，提高静电卡盘200的使用寿命。
在一些可选的实施例中，上述气压调节装置包括抽气装置400和/或充气装置500。以气压调节装置包括抽气装置400和充气装置500为例，如图2所示，抽气装置400与容纳腔连通，且抽气装置400用于对容纳腔抽真空，具体的，抽气装置400的抽气口可以与容纳腔的开口密封连接，此种情况下，抽气装置400能够将容纳腔中的至少部分气体抽出，以使容纳腔中的气压能够与内腔110中的气压相等。在晶圆的刻蚀加工过程中，内腔110通常处于真空状态，此时，可以控制抽气装置400开启，从而将容纳腔内的空气抽出，以使容纳腔内的气压也处于真空状态。
充气装置500与容纳腔连通，且充气装置500用于对容纳腔充气，具体的，充气装置500的出气口可以与容纳腔的开口密封连接，此种情况下，当半导体反应腔室处于非工作状态时，内腔110的气压通常处于大气压状态，此时，可以控制充气装置500开启，从而能够对容纳腔内充气，以使容纳腔内的气压也处于大气压状态，进而使得容纳腔中的气压能够与内腔110的气压相等。
通过上述工作过程可知，本发明实施例公开的半导体反应腔室中，通过抽气装置400能够将容纳腔内的至少部分空气抽出，或通过充气装置500能够为容纳腔内通入气体，以使容纳腔内的气压能够与内腔110中的气压相等，从而可以避免因内腔110与容纳腔之间存在压力差而损坏基体210与功能层之间的粘接性，进而可以提高基体210与功能层之间的连接稳定性，提高静电卡盘的使用寿命。
当然，在上述情况下，还可以通过抽气装置400与充气装置500之间的配合，以使容纳腔内的气压能够与内腔110中的气压始终相等，从而能够避 免因内腔110与容纳腔之间存在压力差而对静电卡盘200中的各部件产生力的作用，进而能够提高静电卡盘200中的各个部件之间的安装稳定性，以提高静电卡盘200的使用寿命。当然，在实际应用中，根据具体需要，也可以单独设置抽气装置400或者充气装置500。
进一步地，在接线通道211的数量为多个的情况下，一个抽气装置400可以与多个容纳腔连通，从而通过一个抽气装置400能够将多个容纳腔内的空气抽出，进而能够提高抽气装置400的利用率；类似地，一个充气装置500可以与多个容纳腔连通，从而通过一个充气装置500能够向多个容纳腔内充气，进而能够提高充气装置500的利用率。
本发明实施例中，可选地，如图2所示，抽气装置400可以包括抽气机构410和第一管道420，抽气机构410可以为真空泵或风机。抽气机构410可以设置于内腔110之外，抽气机构410可以通过第一管道420与容纳腔连通。此种情况下，第一管道420用于将抽气机构410与容纳腔相连通，具体的，第一管道420的第一端可以位于内腔110之外并与抽气机构410的抽气口相连通，第一管道420的第二端可以伸入内腔100中并与容纳腔的开口相连通。为了保证气体的密封性，第一管道420的第一端可以与抽气机构410的抽气口密封连接，且第一管道420的第二端可以与抽气机构410的抽气口密封连接，以防止气体泄漏而影响抽气机构410的抽气效果。具体的，第一管道420的第一端与抽气机构410的抽气口之间和第一管道420的第二端与容纳腔的开口之间均可以设置有密封胶，从而实现较好的密封效果，以使抽气机构410对容纳腔的抽气效果较好。
而且，第一管道420也可以使得抽气机构410的安装灵活性较好，具体的，通过第一管道420的延伸效果，以使抽气机构410能够安装于腔体100外的多个位置。可选地，第一管道420可以为柔性管，进而能够更好地提升抽气机构410的安装灵活性。
进一步地，第一管道420上可以设置有第一开关阀421，具体的工作过程中，在第一开关阀421打开的情况下，抽气机构410可以通过第一管道420将容纳腔中的至少部分空气抽出，以使容纳腔内的气压与内腔110中的气压相等；在第一开关阀421关闭的情况下，容纳腔内的气压能够维持在上述状态。此种方式便于操作，以使容纳腔内的气压能够较容易地与内腔110的气压相等。
可选地，第一开关阀421位于腔体100之外，便于控制。
本发明实施例中，可选地，如图2所示，充气装置500可以包括充气机构510和第二管道520，充气机构510例如为氮气供气机构，充气机构510可以设置于内腔110之外，充气机构510可以通过第二管道520与容纳腔连通。此种情况下，第二管道520用于将充气机构510与容纳腔相连通，具体的，第二管道520的第一端可以位于内腔110之外并与充气机构510的出气口相连通，第二管道520的第二端可以伸入内腔100中并与容纳腔的开口相连通。为了保证气体的密封性，第二管道520的第一端可以与充气机构510的出气口密封连接，且第二管道520的第二端可以与充气机构510的充气口密封连接，以防止气体泄漏而影响充气机构510的充气效果。具体的，第二管道520的第一端与充气机构510的充气口之间和第二管道520的第二端与容纳腔的开口之间可以设置密封胶，从而实现较好的密封效果，以使充气机构510对容纳腔的抽气效果较好。
而且，第二管道520也可以使得充气机构510的安装灵活性较好，具体的，通过第二管道520的延伸效果，以使充气机构510能够安装于腔体100外的多个位置。可选地，第二管道520可以为柔性管，进而能够更好地提升充气机构510的安装灵活性。
进一步地，第二管道520上可以设置有第二开关阀521，具体的工作过程中，在第二开关阀521打开的情况下，充气机构510可以通过第二管道520 向容纳腔内充气，以使容纳腔内的气压与内腔110中的气压相等；在第二开关阀521关闭的情况下，容纳腔内的气压能够维持在上述状态。此种方式便于操作，以使容纳腔内的气压能够较容易地与内腔110中的气压相等。
可选地，第二开关阀521位于腔体100之外，便于控制。
本发明实施例公开的半导体反应腔室还可以包括压力检测装置430，压力检测装置430可以与容纳腔连通，压力检测装置430用于检测容纳腔内的气压大小。在具体的工作过程中，压力检测装置430例如能够显示检测的数据，从而便于工作人员控制抽气机构410和充气机构510工作，以使容纳腔内的气压能够与内腔110中的气压相等。此种方式便于工作人员操作，以使工作人员能够较容易地调节容纳腔内的气压大小，从而使得容纳腔内的气压与内腔110中的气压较容易实现相等。
本发明实施例公开的半导体反应腔室还可以包括安装部600，该安装部600可以设置于下电极壳体900内，基体210可以设置于安装部600上，安装部600能够便于静电卡盘200的安装，与此同时，安装部600可以开设有与容纳腔连通的安装孔610。
安装孔610可以与容纳腔的开口密封连接，抽气装置400可以通过安装孔610与容纳腔连通，且抽气装置400的抽气口与安装孔610可以密封连接，以防止气体泄漏影响抽气装置400的抽气效果。此种情况下，安装部600使得抽气装置400更容易与容纳腔连通，从而便于上述部件的安装。
相应地，充气装置500也可以通过安装孔610与容纳腔连通，且充气装置500的抽气口与安装孔610可以密封连接，以防止气体泄漏影响充气装置500的充气效果。此种情况下，安装部600使得充气装置500更容易与容纳腔连通，从而便于上述部件的安装。
需要说明的是，若气压调节装置包括抽气装置400和充气装置500，则抽气装置400和充气装置500可以分别通过两个安装孔610与容纳腔连通。
进一步地，在一种可选的方案中，本发明实施例公开的半导体反应腔室还可以包括连接法兰700，连接法兰700可以设置于安装部600背离静电卡盘200的一侧，连接法兰700可以开设有气体通道710，气体通道710可以与安装孔610连通，且气体通道710与安装孔610可以密封连接，抽气装置400可以与气体通道710连通，且抽气装置400的抽气口与气体通道710可以密封连接。此种情况下，抽气装置400依次通过气体通道710、安装孔610与容纳腔连通。借助连接法兰700，可以提高安装功能接线可以提高抽气装置400与容纳腔之间的连接稳定性，进而能够提高对容纳腔内的气压调节效果。
类似地，充气装置500也可以与气体通道710连通，且充气装置500的充气口与气体通道710可以密封连接。此种情况下，充气装置500依次通过气体通道710、安装孔610与容纳腔连通。借助连接法兰700，可以提高安装功能接线可以提高充气装置500与容纳腔之间的连接稳定性，进而能够提高对容纳腔内的气压调节效果。
需要说明的是，若气压调节装置包括抽气装置400和充气装置500，则安装孔610和气体通道710各自为两个，且对应设置。
在一种可选的方案中，如图2所示，为了使得容纳腔内的功能接线300方便穿出，连接法兰700的侧壁可以开设有与气体通道710连通的穿线孔740，功能接线300可以通过穿线孔740穿出。此种方式也能够防止功能接线300在穿出过程中影响抽气装置400或充气装置500与连接法兰700之间的连通效果。当然，功能接线300与穿线孔740之间可以密封连接，从而防止气体泄漏影响抽气或充气的效果。
在一种可选的方案中，以气压调节装置包括抽气装置400和充气装置500，且容纳腔为两个为例，如图2所示，抽气装置400中的第一管道420与充气装置500中的第二管道520通过连接管道450相互连通，在这种情况 下，抽气机构410可以通过第一管道420和连接管道450分别与两个气体通道710连通，从而可以实现将两个容纳腔内的空气抽出，进而能够提高抽气装置400的利用率；类似地，充气装置500可以通过第二管道520和连接管道450分别与两个气体通道710连通，从而可以实现向两个容纳腔内充气，进而能够提高充气装置500的利用率。当然，在实际应用中，还可以采用其他管道结构实现一个抽气装置400与多个容纳腔连通，一个充气装置500与多个容纳腔连通。
可选地，本发明实施例公开的半导体反应腔室还可以包括密封圈(图中未示出)，密封圈可以设置于安装部600与连接法兰700彼此相对的表面之间，且密封圈可以围绕安装孔610设置，以使气体通道710与安装孔610之间可以通过密封圈密封连接。此种情况下，密封圈能够使得气体通道710与安装孔610之间的密封效果较好，以防止空气通过安装部600与连接法兰700之间的间隙溢出。上述密封圈的数量与气体通道710和安装孔610各自的数量相同，且一一对应地设置。
进一步地，为了提升密封圈的安装效果，安装部600朝向连接法兰700的一侧可以开设有环形凹槽620，环形凹槽620可以围绕安装孔610设置，部分密封圈可以处于环形凹槽620内。此种情况下，环形凹槽620能够对密封圈起到限位的作用，从而防止密封圈产生偏移而影响气体通道710与安装孔610之间的密封效果。
当然，连接法兰700与安装部600之间的连接方式可以有多种，例如粘接、卡接以及紧固螺钉连接等，可选地，本发明实施例公开的半导体反应腔室还可以包括紧固螺钉，连接法兰700可以包括相连的本体部720和连接部730，上述密封圈可以设置于安装部600与连接部730彼此相对的表面之间，且围绕安装孔610设置。请参考图5，连接部730可以开设有第一通孔731，安装部600可以开设有螺纹孔，紧固螺钉可以穿过第一通孔731，且可以与 螺纹孔相连。相比于其他的连接方式，此种方式不仅能够提高连接法兰700与安装部600之间的连接可靠性，而且，在连接法兰700与安装部600之间设置有密封圈的情况下，通过拧紧紧固螺钉，可以挤压密封圈，以使气体通道710与安装孔610之间的密封效果较好。可选地，密封圈可以为柔性件，从而能够更好地提升气体通道710与安装孔610之间的密封效果。
本发明实施例中，如图3所示，功能层例如包括陶瓷层220和加热层230，具体的，陶瓷层220可以设置于加热层230上，加热层230可以设置于基体210上，陶瓷层220、加热层230和基体210三者均可以采用粘接的方式依次固定相连，此种情况下，如图2和图4所示，加热层230覆盖在接线通道211的端口，且与基体210可以围成容纳空间，功能接线300包括控制接线，该控制接线的一端可以与第一设备810相连，控制接线的另一端可以穿过接线通道211，且可以与加热层230电连接，第一设备810能够通过上述控制接线控制加热层230，以使加热层230能够加热置于陶瓷层220表面上的晶圆。此种情况下，上述控制接线实现了加热层230与第一设备810的电导通，从而方便第一设备810控制加热层230加热晶圆。上述第一设备810例如包括加热功率调节装置和控制器。
和/或，在静电卡盘200包括依次连接的陶瓷层220、加热层230和基体210的情况下，陶瓷层220、加热层230和基体210的连接方式与上述实施例相同，不作赘述。功能接线300包括检测接线，且对应地加热层230可以开设有与接线通道211连通的第二通孔231，此种情况下，第二通孔231与容纳腔连通，上述检测接线的一端可以与第二设备820相连，检测接线的另一端可以依次穿过接线通道211和第二通孔231，且可以与陶瓷层220接触。此种情况下，第二设备820例如包括测温传感器(或者包括测温传感器和控制器)，而上述检测接线可以为该测温传感器的检测接线，该测温传感器例如为热电偶或测温光纤，容纳腔可以供测温传感器的检测接线通过，从而能够 实现对晶圆的测温。
上述实施例中的第一设备810和第二设备820均位于与腔体100之外，功能接线300的一端与第一设备810和/或第二设备820电连接，功能接线300的另一端伸入内腔中，并且穿入接线通道211进而与功能层接触。需要说明的是，若功能接线300包括检测接线，例如测温传感器的检测接线，则功能层与功能接线300接触具体是指该检测接线与功能层中的陶瓷层220接触；若功能接线300包括控制接线，则功能层与功能接线300接触具体是指该控制接线与功能层中的加热层230电连接，当然，在实际应用中，不同类型的功能接线300，其与功能层的接触方式也可以适应性地改变，本发明对此没有特别的限制。
基于本发明上述任一实施例的半导体反应腔室，本发明实施例还公开一种半导体加工设备，所公开的半导体加工设备具有上述任一实施例的半导体反应腔室。
本发明上文实施例中重点描述的是各个实施例之间的不同，各个实施例之间不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
以上所述仅为本发明的实施例而已，并不用于限制本发明。对于本领域技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (11)

  1. 一种半导体反应腔室，其特征在于，包括：
    腔体，所述腔体围成内腔；
    静电卡盘，所述静电卡盘位于所述内腔中，所述静电卡盘包括基体和设置于所述基体上的功能层，且所述基体与所述功能层通过粘接固定，所述基体中开设有接线通道，所述功能层覆盖所述接线通道的端口，且与所述基体将所述接线通道围成容纳腔；
    功能接线，所述功能接线穿过所述接线通道，且与所述功能层接触；以及
    气压调节装置，与所述容纳腔连通，用于平衡所述容纳腔内的气压与所述内腔中的气压。
  2. 根据权利要求1所述的半导体反应腔室，其特征在于，所述气压调节装置包括：
    抽气装置，所述抽气装置与所述容纳腔连通且用于对所述容纳腔抽真空；和/或，
    充气装置，所述充气装置与所述容纳腔连通且用于对所述容纳腔充气。
  3. 根据权利要求2所述的半导体反应腔室，其特征在于，所述抽气装置包括抽气机构和第一管道，所述抽气机构设置于所述内腔之外，所述抽气机构通过所述第一管道与所述容纳腔连通，且所述第一管道上设置有第一开关阀；和/或，
    所述充气装置包括充气机构和第二管道，所述充气机构设置于所述内腔之外，所述充气机构通过所述第二管道与所述容纳腔连通，且所述第二管道上设置有第二开关阀。
  4. 根据权利要求1-3任意一项所述的半导体反应腔室，其特征在于，所述半导体反应腔室还包括压力检测装置，所述压力检测装置用于检测所述容纳腔内的气压大小。
  5. 根据权利要求1-3任意一项所述的半导体反应腔室，其特征在于，所述半导体反应腔室还包括安装部，所述安装部位于所述内腔中，所述基体设置于所述安装部上，所述安装部中开设有与所述容纳腔连通的安装孔，所述抽气装置和/或所述充气装置通过所述安装孔与所述容纳腔连通。
  6. 根据权利要求5所述的半导体反应腔室，其特征在于，所述半导体反应腔室还包括连接法兰，所述连接法兰设置于所述安装部背离所述静电卡盘的一侧，所述连接法兰中开设有气体通道，所述气体通道与所述安装孔连通，所述抽气装置和/或所述充气装置与所述气体通道连通。
  7. 根据权利要求6所述的半导体反应腔室，其特征在于，所述半导体反应腔室还包括密封圈，所述密封圈设置于所述安装部与所述连接法兰彼此相对的表面之间，且围绕所述安装孔设置，用以密封所述气体通道与所述安装孔之间的连接处。
  8. 根据权利要求7所述的半导体反应腔室，其特征在于，所述半导体反应腔室还包括紧固螺钉，所述连接法兰包括相连的本体部和连接部，所述密封圈设置于所述安装部与所述连接部彼此相对的表面之间，且围绕所述安装孔设置，用以密封所述气体通道与所述安装孔之间的连接处；并且，所述连接部中开设有第一通孔，所述安装部开设有螺纹孔，所述紧固螺钉穿过所述第一通孔，且与所述螺纹孔螺纹配合。
  9. 根据权利要求6所述的半导体反应腔室，其特征在于，所述连接法兰的侧壁开设有与所述气体通道连通的穿线孔，所述功能接线通过所述穿线孔穿出，且在所述功能接线与所述穿线孔之间设置有密封结构，用以对二者之间的间隙进行密封。
  10. 根据权利要求1所述的半导体反应腔室，其特征在于，所述功能层包括陶瓷层和加热层，其中，所述陶瓷层设置于所述加热层上，所述加热层设置于所述基体上，所述加热层覆盖所述接线通道的端口，且与所述基体将所述接线通道围成所述容纳腔，并且所述功能接线包括控制接线，且与所述 加热层电连接；和/或，
    所述功能层包括陶瓷层和加热层，其中，所述陶瓷层设置于所述加热层上，所述加热层设置于所述基体上，所述加热层覆盖所述接线通道的端口，且与所述基体将所述接线通道围成所述容纳腔，所述功能接线包括检测接线，且所述加热层开设有与所述接线通道连通的第二通孔，所述第二通孔与所述容纳腔连通，所述检测接线与所述陶瓷层接触。
  11. 一种半导体加工设备，其特征在于，包括权利要求1至9中任一项所述的半导体反应腔室。
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