WO2022011932A1 - 一种表面拥有纳米结构的防静电陶瓷砖及制备方法 - Google Patents

一种表面拥有纳米结构的防静电陶瓷砖及制备方法 Download PDF

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WO2022011932A1
WO2022011932A1 PCT/CN2020/133065 CN2020133065W WO2022011932A1 WO 2022011932 A1 WO2022011932 A1 WO 2022011932A1 CN 2020133065 W CN2020133065 W CN 2020133065W WO 2022011932 A1 WO2022011932 A1 WO 2022011932A1
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ceramic tile
preparing
silver particles
nano
film layer
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PCT/CN2020/133065
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English (en)
French (fr)
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刘世明
陈然
简润桐
叶德林
马杰
王亚婕
黄佳奇
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广东萨米特陶瓷有限公司
广东新明珠陶瓷集团有限公司
佛山市三水冠珠陶瓷有限公司
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Publication of WO2022011932A1 publication Critical patent/WO2022011932A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5116—Ag or Au
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/90—Electrical properties
    • C04B2111/905—Anti-static materials

Definitions

  • the invention belongs to the technical field of industrial ceramics, and in particular relates to an antistatic ceramic tile with a nanostructure on the surface and a preparation method thereof.
  • Static electricity is a ubiquitous phenomenon. In various industries, especially those with precision instruments or special environments need to take protective measures against static electricity. In terms of decorative materials, there are anti-static decorative boards, wood, conductive paint, etc., and ceramic materials occupy a considerable proportion of decorative materials, so the preparation of an anti-static ceramic is also the direction of our joint efforts.
  • anti-static ceramics such as CN103614003B, which provides a method of using semiconductor oxides added to ceramic ink to print on the surface of ceramics to achieve antistatic effect; for example, patent CN102030519B uses zinc oxide, tin oxide semiconductor powder to directly connect with ceramic blanks Antistatic ceramics are prepared by ball milling and mixing; there are also patents CN102795893B, CN103113133A and other published schemes all adopt the same method; although the process is different, they all use semiconductor powder to eliminate static electricity.
  • the semiconductor powders added to the ceramic blanks generally use single or composite powders such as zinc oxide, tin oxide or antimony oxide, and a certain proportion needs to be added.
  • the purpose of the present invention is to provide a method for preparing electrostatic ceramic tiles with low technical difficulty in production, easy implementation and high cost performance.
  • a preparation method of an antistatic ceramic tile with nanostructures on the surface comprising the following steps:
  • the nano-silica solution doped with silver particles in the S4 is composed of nano-silica doped with silver particles, water, a coupling agent, and a pH regulator;
  • composition is as follows: nano-silicon dioxide doped with silver particles: 20-50%, water: 50-80%, coupling agent: 1-5% and pH value adjusting agent: 0.5-1%.
  • the weak acid in the S1 is an aqueous citric acid solution with a concentration of 5-15% by weight.
  • the pressure of the high-pressure atomization is 0.6-0.8 MPa, and the diameter of the nozzle of the atomizing device is 0.5-1.0 mm.
  • the coating method used in the S5 is to transfer the nano-silica aqueous solution to the surface of the ceramic tile with a cotton cloth in a state of 100% wetting and saturation, and the baking process in the S5 is at 150-250 ° C. At the same temperature, bake for 20 to 60 minutes.
  • the size of the nano-silica is 50-200 nm, and the size of the silver particles is 2-5 nm.
  • the modification time in S2 is 30-120 seconds.
  • the roughness Ra of the surface of the ceramic tile in S2 after the surface microstructure modification is performed is 0.1-0.5 ⁇ m.
  • the invention also discloses an antistatic ceramic tile with nanostructure on the surface, comprising a ceramic tile and a thin film layer, the thin film layer is arranged on the surface of the ceramic tile, the contact angle of the thin film layer is 0-10°, and the thin film The layer is superhydrophilic.
  • the thickness of the thin film layer is 1-5 ⁇ m.
  • the ceramic tile By using weak acid to treat the surface of the ceramic tile microstructure, the specific surface area and recessed structure of the ceramic tile surface are increased, on the one hand, the ceramic tile can better accept the coating of nano-silica solution doped with silver particles, and on the other hand On the one hand, the adsorption capacity of the ceramic tile for water molecules in the air is improved, so that the ceramic tile has a certain anti-static effect. After a specific temperature and time, the ceramic tiles coated with the nano-silica solution doped with silver particles are baked, so that the nano-silica solution doped with silver particles forms a thin film layer on the surface of the ceramic tiles.
  • the film layer is super hydrophilic, it can absorb water molecules in the air, making the ceramic tile have a good anti-static effect, and the nano-sized silver particles doped in the film layer will form a good conductive network in the film layer. , so that the surface resistance of the ceramic tile is reduced, and the accumulated static electricity will be released as soon as possible, so as to achieve the effect of anti-static, so that the anti-static ability of the ceramic tile is further improved;
  • Fig. 1 is the process flow diagram of embodiment 1 and 2 of the present invention
  • Fig. 2 is the process flow diagram of embodiment 3 of the present invention.
  • Embodiment 4 of the present invention is a structural cross-sectional view of Embodiment 4 of the present invention.
  • FIG. 4 is a sectional view of the structure of Embodiment 5 of the present invention.
  • Embodiment 1 is a kind of antistatic ceramic tile and preparation method that a kind of surface has nanostructure disclosed by the present invention, and content is as follows:
  • the spraying method of the weak acid adopts an air pressure of 0.7MPa, the diameter of the nozzle is preferably 0.5mm, and the weak acid is sprayed on the surface of the ceramic tile 1, preferably a modification time of 120 seconds is used, and the roughness Ra of the microstructure is 0.15 ⁇ m;
  • Nano silica doped with silver particles 25%, wherein the size of silver particles is 2nm, the size of silica is 50nm, water: 69.5%, hydrophilic silane coupling agent: 5%, pH adjuster: 0.5 % Potassium tartrate;
  • the ceramic tile 1 after coating is dried again through a certain temperature and time, and the drying time and temperature are preferably selected at a temperature of 180 ° C and a time of 60 min, the thickness of the film layer 2 is 2 ⁇ m, and the contact angle is 3 °;
  • the product prepared by the above scheme has been tested, and the surface resistance is 5.68 ⁇ 108 ⁇ by point-to-point test in an environment with a temperature of 25°C and a relative humidity of 50-70%, which meets the national standard of SJ/T10694-2006 and is a good anti-static Ceramic tiles.
  • Embodiment 2 is a kind of antistatic ceramic tile and preparation method that a kind of surface has nanostructure disclosed by the present invention, and content is as follows:
  • the spraying method of the weak acid adopts an air pressure of 0.6-0.8MPa, the diameter of the nozzle is preferably 0.6mm, and the weak acid is sprayed on the surface of the ceramic tile 1, preferably a modification time of 90 seconds is used, and the roughness Ra of the microstructure is 0.25 ⁇ m;
  • Nano-silica doped with silver particles 32%, in which the size of silver particles is 3nm, the size of silica is 120nm, water: 64.3%, hydrophilic silane coupling agent: 3%, pH adjuster: 0.7 % Potassium tartrate;
  • the ceramic tile 1 after coating is dried again through a certain temperature and time, and the drying time and temperature are preferably selected at a temperature of 200 ° C and a time of 35 min, the thickness of the film layer 2 is 3 ⁇ m, and the contact angle is 4 °;
  • the product prepared by the above scheme has been tested, and the surface resistance is 5.18 ⁇ 108 ⁇ by point-to-point test in an environment with a temperature of 25°C and a relative humidity of 50-70%, which meets the national standard of SJ/T10694-2006 and is a good anti-static Ceramic tiles.
  • Embodiment 3 is a kind of antistatic ceramic tile and preparation method that a kind of surface has nanostructure disclosed by the present invention, and content is as follows:
  • the spraying method of the weak acid adopts an air pressure of 0.8MPa, the diameter of the nozzle is preferably 1.0mm, and the weak acid is sprayed on the surface of the ceramic tile 1, preferably a modification time of 120 seconds is used, and the roughness Ra of the formed microstructure is 0.4 ⁇ m;
  • Nano-silica doped with silver particles 40%, wherein the size of silver particles is 5nm, the size of silica is 200nm, water: 57.5%, hydrophilic silane coupling agent: 1.5%, pH adjuster: 1 % Potassium tartrate;
  • the ceramic tile 1 after coating is dried again through a certain temperature and time, and the drying time and temperature are preferably selected at a temperature of 250 ° C and a time of 20 min.
  • the thickness of the film layer 2 is 5 ⁇ m, and the contact angle is 5 °;
  • the products prepared in the above examples have been inspected and found that the surface resistance is 4.58 ⁇ 108 ⁇ by point-to-point test in an environment with a temperature of 25°C and a relative humidity of 50-70%, which conforms to the national standard of SJ/T10694-2006 and is a good anti-static Ceramic tiles.
  • Embodiment 4 is an antistatic ceramic tile with nanostructure on the surface disclosed in the present invention, including ceramic tile 1 and a thin film layer 2, the thin film layer 2 only covers the upper surface of the ceramic tile 1, and the specific structure is shown in FIG. 3 .
  • Embodiment 5 is an antistatic ceramic tile with nanostructure on the surface disclosed in the present invention, including ceramic tile 1 and a thin film layer 2, the thin film layer 2 completely covers the surface of the ceramic tile 1, and the specific structure is shown in FIG. 4 .

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  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
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  • Inorganic Chemistry (AREA)
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Abstract

一种表面拥有纳米结构的防静电陶瓷砖及制备方法，所述方法包括以下步骤：S1、根据陶瓷砖(1)表面微观结构的要求，配制一定浓度的弱酸；S2、采用高压雾化设备，均匀喷涂弱酸在研磨抛光后的陶瓷砖(1)表面，进行表面微观结构修饰；S3、对修饰后的陶瓷砖(1)表面进行清洗、吹干；S4、制备掺杂银粒子的纳米二氧化硅水溶液；S5、采用涂布方式将掺杂银粒子的纳米二氧化硅水溶液涂布在修饰后的陶瓷砖表面形成薄膜层(2)并烘烤；S6、烘烤结束，冷却，得到防静电陶瓷砖。具有生产技术难度低，易于实施且性价比高的特点。

Description

一种表面拥有纳米结构的防静电陶瓷砖及制备方法 技术领域
本发明属于工业陶瓷技术领域，具体涉及一种表面拥有纳米结构的防静电陶瓷砖及制备方法。
背景技术
静电是一种普遍存在的现象，在各行业中，特别是具有精密仪器或者特殊环境对静电需要采用防护措施。在装饰材料方面，有采用防静电的装饰板、木材、导电漆等，而在装饰材料中陶瓷材料是占据了相当大比例的，因此制备一种具有防静电的陶瓷也是大家共同努力的方向。
目前，研究防静电陶瓷的专利有，如CN103614003B提供了一种使用半导体氧化物添加到陶瓷墨水打印到陶瓷表面，达到抗静电的效果；如专利CN102030519B采用氧化锌、氧化锡半导体粉直接与陶瓷坯料球磨混合制备防静电陶瓷；还有专利CN102795893B、CN103113133A等公布的方案都是采用同样的方法；虽然采用的过程不一样，但都是利用了半导体粉可以消除静电这材料性质。目前添加到陶瓷坯料的半导体粉一般采用的是氧化锌、氧化锡或者氧化锑等单一或者复合粉，而且需要添加一定的比例，如专利CN102030519B所介绍的需要添加11％～35％的二氧化锡、1％～9％的三氧化二锑；如专利CN102795893B所述添加二氧化锡30～45％，因此导致成本很高；另外还有通过采用特殊的工艺制备方法，如专利CN103113133A所介绍采用导电浆料包裹陶瓷砖坯粉的方法，虽然减少了半导体粉的用量，但是增加了生产过程的工序和成本，而且提高了生产的技术难度，不易于实施。
因此，开发出一种生产技术难度低，易于实施且性价比高的静电陶瓷砖制备方法势在必行。
发明内容
本发明的目的是提供一种生产技术难度低，易于实施且性价比高的静电陶瓷砖制备方法。
为实现上述发明目的，本发明采取的技术方案如下：
一种表面拥有纳米结构的防静电陶瓷砖的制备方法，包括以下步骤：
S1、根据陶瓷砖表面微观结构的要求，配制弱酸；
S2、采用高压雾化设备，均匀喷涂弱酸在研磨抛光后的陶瓷砖表面，进行表面微观结构修饰；
S3、对修饰后的陶瓷砖表面进行清洗、吹干；
S4、制备掺杂银粒子的纳米二氧化硅水溶液；
S5、采用涂布方式将掺杂银粒子的纳米二氧化硅水溶液涂布在修饰后的陶瓷砖表面形成薄膜层，并烘烤；
S6、烘烤结束，冷却，得到防静电陶瓷砖。
作为优选，所述S4中的掺杂银粒子的纳米二氧化硅水溶液，由掺杂银粒子的纳米二氧化硅、水和偶联剂、pH值调节剂组成；
其组成按重量百分比为：掺杂银粒子的纳米二氧化硅：20～50％、水：50～80％、偶联剂：1～5％以及pH值调节剂：0.5～1％。
作为优选，所述S1中的弱酸采用浓度为5-15重量％的柠檬酸水溶液。
作为优选，所述S2中，高压雾化的压力为0.6～0.8MPa，雾化设备的喷嘴直径0.5～1.0mm。
作为优选，所述S5中采用的涂布方式，是用100％润湿饱和的状态下的棉布把纳米二氧化硅水溶液转移到陶瓷砖表面，所述S5中烘烤过程为在150～250℃的温度下，烘烤20～60分钟。
作为优选，所述纳米二氧化硅的尺寸为50～200nm，所述银粒子的尺寸为2～5nm。
作为优选，所述S2中修饰时间为30～120秒。
作为优选，所述S2中陶瓷砖表面进行表面微观结构修饰后的粗糙度Ra为0.1～0.5μm。
本发明还公开了一种表面拥有纳米结构的防静电陶瓷砖，包括陶瓷砖以及薄膜层，所述薄膜层设置于陶瓷砖表面，所述薄膜层的接触角为0～10°，所述薄膜层具有超亲水性。
作为优选，所述薄膜层厚度为1～5μm。
相对于现有技术，本发明取得了有益的技术效果：
1、通过使用弱酸对陶瓷砖表面进行微观结构处理，增加了陶瓷砖表面的比表面积以及 凹陷结构，一方面使得陶瓷砖可以更好的接受掺杂银粒子的纳米二氧化硅溶液涂布，另一方面使得陶瓷砖对于空气中的水分子的吸附能力得到提升，从而使得陶瓷砖具有一定的防静电效果，同时通过对陶瓷砖修饰过的表面涂布掺杂银粒子的纳米二氧化硅溶液，再经过特定的温度和时间对表面涂布有掺杂银粒子的纳米二氧化硅溶液的陶瓷砖进行烘烤，使掺杂银粒子的纳米二氧化硅水溶液在陶瓷砖表面形成一层薄膜层，因薄膜层具有超亲水性，能够吸附空气中的水分子，使得陶瓷砖具有较好的防静电效果，而薄膜层中掺杂的纳米级银粒子，会在薄膜层内形成良好的导电网络，从而使陶瓷砖表面电阻下降，积聚的静电会被尽快地释放，从而达到防静电的效果，使得陶瓷砖的防静电能力得到进一步提升；
2、无需对常规陶瓷砖的坯体和釉料配方做出改变，而是通过对常规陶瓷砖进行表面微观结构的修饰以及涂布具有防静电效果的薄膜层，在对陶瓷砖整体结构改变较小的前提下使得陶瓷砖具有良好的防静电的效果，本发明的方法简单易行，适用于工业化生产；
3、无需对现有的陶瓷砖生产设备做出调整，节约了因工艺流程升级而产生的设备改造费用，使得防静电瓷砖的生产成本降低，具有较好的经济适用性，有利于提升本发明的适用范围。
附图说明
图1是本发明实施例1和2的工艺流程简图；
图2是本发明实施例3的工艺流程简图；
图3是本发明实施例4的结构剖视图；
图4是本发明实施例5的结构剖视图。
其中，各附图标记所指代的技术特征如下：
1、陶瓷砖；2、薄膜层。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例和附图对本发明进行进一步详细说明，但本发明要求保护的范围并不局限于下述具体实施例。
实施例1
实施例1为本发明公布的一种表面拥有纳米结构的防静电陶瓷砖及制备方法，内容如下:
1)优选选用浓度为5重量％的柠檬酸水溶液，对陶瓷砖1表面进行微观结构修饰；
2)弱酸的喷涂方式采用0.7MPa的空气压力，喷嘴直径优选选用0.5mm，喷涂弱酸在陶瓷砖1表面，优选选用120秒的修饰时间，形成微观结构的粗糙度Ra为0.15μm；
3)用清水冲洗陶瓷砖1表面，并用自然风吹干表面，直到肉眼看不到明显的液态水；
4)用100％润湿饱和状态下的棉布将掺杂纳米二氧化硅水溶液涂布在修饰后的陶瓷砖1表面，涂布速度160mm/s，按重量百分比组成优选方案一：
掺杂银粒子的纳米二氧化硅：25％，其中银粒子尺寸大小为2nm，二氧化硅尺寸大小为50nm、水：69.5％、亲水硅烷偶联剂：5％、pH值调节剂：0.5％酒石酸钾；
5)涂布后的陶瓷砖1再经过一定的温度和时间进行烘干，烘干时间和温度，优选选用温度180℃，时间60min，薄膜层2厚度为2μm，接触角为3°；
6)烘干结束，冷却，制备出防静电陶瓷砖。
经过以上方案制备的产品经检验，在温度25℃，相对湿度50-70％的环境中，采用点对点测试表面电阻为5.68×108Ω，符合SJ/T10694-2006国家标准，是一种良好的防静电陶瓷砖。
实施例2
实施例2为本发明公布的一种表面拥有纳米结构的防静电陶瓷砖及制备方法，内容如下:
1)根据弱酸的选用方案，优选选用浓度为10重量％的柠檬酸水溶液，对陶瓷砖1表面进行微观结构修饰；
2)弱酸的喷涂方式采用0.6-0.8MPa的空气压力，喷嘴直径优选选用0.6mm，喷涂弱酸在陶瓷砖1表面，优选选用90秒的修饰时间，形成微观结构的粗糙度Ra为0.25μm；
3)用清水冲洗陶瓷砖1表面，并用自然风吹干表面，肉眼看不到明显的液态水；
4)用100％润湿饱和状态下的棉布将掺杂纳米二氧化硅水溶液涂布在修饰后的陶瓷砖1表面，涂布速度140mm/s，按重量百分比组成优选方案二：
掺杂银粒子的纳米二氧化硅：32％，其中银粒子尺寸大小为3nm，二氧化硅尺寸大小为120nm、水：64.3％、亲水硅烷偶联剂：3％、pH值调节剂：0.7％酒石酸钾；
5)涂布后的陶瓷砖1再经过一定的温度和时间进行烘干，烘干时间和温度，优选选用温度200℃，时间35min，薄膜层2厚度为3μm，接触角为4°；
6)烘干结束，冷却，制备出防静电陶瓷砖。
经过以上方案制备的产品经检验，在温度25℃，相对湿度50-70％的环境中，采用点对点测试表面电阻为5.18×108Ω，符合SJ/T10694-2006国家标准，是一种良好的防静电陶瓷砖。
实施例3
实施例3为本发明公布的一种表面拥有纳米结构的防静电陶瓷砖及制备方法，内容如下:
1)优选选用浓度为15重量％的柠檬酸水溶液，对陶瓷砖1表面进行微观结构修饰；
2)弱酸的喷涂方式采用0.8MPa的空气压力，喷嘴直径优选选用1.0mm，喷涂弱酸在陶瓷砖1表面，优选选用120秒的修饰时间，形成微观结构的粗糙度Ra为0.4μm；
3)用清水冲洗陶瓷砖1表面，并用自然风吹干表面，直到肉眼看不到明显的液态水；
4)用100％润湿饱和状态下的棉布将掺杂纳米二氧化硅水溶液涂布在修饰后的陶瓷砖1表面，涂布速度120mm/s，按重量百分比组成优选方案三：
掺杂银粒子的纳米二氧化硅：40％，其中银粒子尺寸大小为5nm，二氧化硅尺寸大小为200nm、水：57.5％、亲水硅烷偶联剂：1.5％、pH值调节剂：1％酒石酸钾；
5)涂布后的陶瓷砖1再经过一定的温度和时间进行烘干，烘干时间和温度，优选选用温度250℃，时间20min，薄膜层2厚度为5μm，接触角为5°；
6)烘干结束，冷却，制备出防静电陶瓷砖。
以上实施例制备的产品经检验，在温度25℃，相对湿度50-70％的环境中，采用点对点测试表面电阻为4.58×108Ω，符合SJ/T10694-2006国家标准，是一种良好的防静电陶瓷砖。
实施例4
实施例4为本发明公布的一种表面拥有纳米结构的防静电陶瓷砖，包括陶瓷砖1以及薄膜层2，薄膜层2仅覆盖陶瓷砖1的上表面，具体结构具体参见图3。
实施例5
实施例5为本发明公布的一种表面拥有纳米结构的防静电陶瓷砖，包括陶瓷砖1以及薄膜层2，薄膜层2完全覆盖陶瓷砖1的表面，具体结构具体参见图4。
根据上述说明书的揭示和教导，本发明所属领域的技术人员还可以对上述实施方式进行变更和修改。因此，本发明并不局限于上面揭示和描述的具体实施方式，对发明的一些修改和变更也应当落入本发明的权利要求的保护范围内。此外，尽管本说明书中使用了一 些特定的术语，但这些术语只是为了方便说明，并不对发明构成任何限制。

Claims (10)

  1. 一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，包括以下步骤：
    S1:根据陶瓷砖(1)表面微观结构的要求，配制弱酸；
    S2:采用高压雾化设备，均匀喷涂弱酸在研磨抛光后的陶瓷砖(1)表面，进行表面微观结构修饰；
    S3:对修饰后的陶瓷砖(1)表面进行清洗、吹干；
    S4:制备掺杂银粒子的纳米二氧化硅水溶液；
    S5:采用涂布方式将掺杂银粒子的纳米二氧化硅水溶液涂布在修饰后的陶瓷砖(1)表面形成薄膜层(2)，并烘烤；
    S6、烘烤结束，冷却，得到防静电陶瓷砖。
  2. 根据权利要求1所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S4中的掺杂银粒子的纳米二氧化硅水溶液，由掺杂银粒子的纳米二氧化硅、水和偶联剂、pH值调节剂组成；
    其组成按重量百分比为：掺杂银粒子的纳米二氧化硅：20～50％、水：50～80％、偶联剂：1～5％以及pH值调节剂：0.5～1％。
  3. 根据权利要求1所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S1中的弱酸采用浓度为5-15重量％的柠檬酸水溶液。
  4. 根据权利要求3所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S2中，高压雾化的压力为0.6～0.8MPa，雾化设备的喷嘴直径0.5～1.0mm。
  5. 根据权利要求1所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S5中采用的涂布方式，是用100％润湿饱和的状态下的棉布把纳米二氧化硅水溶液转移到陶瓷砖(1)表面，所述S5中烘烤过程为在150～250℃的温度下，烘烤20～60分钟。
  6. 根据权利要求2所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述纳米二氧化硅的尺寸为50～200nm，所述银粒子的尺寸为2～5nm。
  7. 根据权利要求2所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S2中修饰时间为30～120秒。
  8. 根据权利要求1所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述S2中陶瓷砖(1)表面进行表面微观结构修饰后的粗糙度Ra为0.1～0.5μm。
  9. 一种根据权利要求1～8任一所述制备方法制得的表面拥有纳米结构的防静电陶瓷砖，包括陶瓷砖(1)以及薄膜层(2)，所述薄膜层(2)设置于陶瓷砖(1)表面，其特征在于，所述薄膜层(2)的接触角为0～10°，所述薄膜层(2)具有超亲水性。
  10. 根据权利要求9所述的一种表面拥有纳米结构的防静电陶瓷砖的制备方法，其特征在于，所述薄膜层(2)厚度为1～5μm。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040097600A1 (en) * 2002-10-14 2004-05-20 Akzo Nobel N.V. Aqueous dispersion
CN101579672A (zh) * 2008-05-16 2009-11-18 3M创新有限公司 用于提高亲水性/透射率的二氧化硅涂层
CN104672480A (zh) * 2014-12-16 2015-06-03 丁新波 一种防污自洁pvc膜结构材料表面处理方法
CN108410221A (zh) * 2018-04-23 2018-08-17 刘峰 自清洁的涂层
CN110372222A (zh) * 2019-06-28 2019-10-25 华为技术有限公司 玻璃面板及其制备方法、包含该玻璃面板的显示屏和终端
CN110804331A (zh) * 2019-11-20 2020-02-18 佛山市东鹏陶瓷有限公司 防静电剂及其制备方法和使用其的涂料、瓷砖的制备方法
CN111807876A (zh) * 2020-07-14 2020-10-23 广东萨米特陶瓷有限公司 一种表面拥有纳米结构的防静电陶瓷砖及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3140377U (ja) * 2007-11-02 2008-03-27 有限会社総合技研 汚れが付きにくく取れ易い親水性陶磁器
CN107641345A (zh) * 2017-11-03 2018-01-30 张家港外星人新材料科技有限公司 一种自清洁纳米涂料、无机透明涂层和自清洁制品
CN110759750A (zh) * 2019-11-01 2020-02-07 吴俊楠 一种led用高导热陶瓷材料的制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040097600A1 (en) * 2002-10-14 2004-05-20 Akzo Nobel N.V. Aqueous dispersion
CN101579672A (zh) * 2008-05-16 2009-11-18 3M创新有限公司 用于提高亲水性/透射率的二氧化硅涂层
CN104672480A (zh) * 2014-12-16 2015-06-03 丁新波 一种防污自洁pvc膜结构材料表面处理方法
CN108410221A (zh) * 2018-04-23 2018-08-17 刘峰 自清洁的涂层
CN110372222A (zh) * 2019-06-28 2019-10-25 华为技术有限公司 玻璃面板及其制备方法、包含该玻璃面板的显示屏和终端
CN110804331A (zh) * 2019-11-20 2020-02-18 佛山市东鹏陶瓷有限公司 防静电剂及其制备方法和使用其的涂料、瓷砖的制备方法
CN111807876A (zh) * 2020-07-14 2020-10-23 广东萨米特陶瓷有限公司 一种表面拥有纳米结构的防静电陶瓷砖及制备方法

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