WO2022007538A1 - Dispositif de traitement vertical de plaquette de marangoni - Google Patents

Dispositif de traitement vertical de plaquette de marangoni Download PDF

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Publication number
WO2022007538A1
WO2022007538A1 PCT/CN2021/097222 CN2021097222W WO2022007538A1 WO 2022007538 A1 WO2022007538 A1 WO 2022007538A1 CN 2021097222 W CN2021097222 W CN 2021097222W WO 2022007538 A1 WO2022007538 A1 WO 2022007538A1
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WIPO (PCT)
Prior art keywords
nozzle
wafer
arm
nozzle arm
nozzles
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PCT/CN2021/097222
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English (en)
Chinese (zh)
Inventor
李长坤
赵德文
路新春
Original Assignee
清华大学
华海清科股份有限公司
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Publication of WO2022007538A1 publication Critical patent/WO2022007538A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present application relates to the field of semiconductor manufacturing equipment, in particular to a vertical Marangoni wafer processing device.
  • Wafer manufacturing is a key link restricting the development of the VLSI (ie chip, IC, Integrated Circuit Chip) industry. As the feature size of integrated circuits continues to shrink, the wafer surface quality requirements are getting higher and higher, so the wafer manufacturing process has more and more stringent control over the size and number of defects.
  • the control range of pollutants above 19nm is also reduced from 100 to 50, gradually approaching the limit of cleaning technology and measurement technology. Contamination is an important factor that causes the deterioration of wafer surface quality and even defects. Therefore, it is necessary to use cleaning technology to desorb the contaminants on the wafer surface to obtain an ultra-clean surface, especially after chemical mechanical polishing (CMP, Chemical Mechanical Polishing). During cleaning and drying, it is easy to encounter liquid mark defects (also known as water marks), which will lead to local changes in oxide thickness and seriously affect the chip manufacturing yield.
  • CMP chemical mechanical polishing
  • the wettability of the wafer has a significant effect on the formation of liquid streaks, and it is more prone to create liquid streaks on hydrophobic surfaces because the liquid film on the hydrophobic film is easily broken into isolated droplets and evaporates in oxygen-containing air Causes fluid streaks.
  • the Marangoni effect is an interfacial convection phenomenon caused by surface tension gradients.
  • An existing drying technique based on the Marangoni effect is to blow a wafer-air-liquid "meniscus" such as IPA containing isopropyl alcohol onto the wafer-air-liquid "meniscus” when the wafer is removed from a water bath of deionized water.
  • the organic vapor induced by the Marangoni effect realizes the reflow of the attached liquid, thereby obtaining a fully dried wafer, which is generally called Marangoni tira drying.
  • Related patents can be found in Chinese patent applications CN201810659303.2 and CN201810659303. 2.
  • the purpose of the present application is to provide a vertical Marangoni wafer processing device, which aims to partially solve the above problems to a certain extent, which improves the wafer drying effect, saves space, improves equipment stability and reduces failure rate.
  • a vertical Marangoni wafer processing apparatus comprising: a drive mechanism for vertically rotating wafers, a supply arm for conveying fluid, and a box; the supply arm can Swing vertically and supply fluid onto the wafer via a nozzle assembly disposed at its free end; characterized in that the nozzle assembly includes a first nozzle arm and a second nozzle arm having nozzles, the first nozzle The arm and the second nozzle arm extend along the supply arm, and are rotatably fixed to the free end of the supply arm.
  • the first nozzle arm is located below a second nozzle arm, the first nozzle arm having one nozzle and the second nozzle arm having at least one nozzle.
  • the second nozzle arm has two nozzles.
  • the nozzles of the first nozzle arm are arranged perpendicular to the first nozzle arm, and the first nozzle arm is inclined downward relative to the orientation of its nozzle perpendicular to the plane on which the wafer is located so that its nozzle faces the wafer Inclined jet.
  • the first nozzle arm is inclined downward about its axis by 0° to 50° with respect to the orientation of its nozzle perpendicular to the plane of the wafer.
  • the first nozzle arm is inclined downward about its axis by 15° to 45° with respect to the orientation of its nozzle perpendicular to the plane of the wafer.
  • the second nozzle arm is rotated downward about its axis direction relative to the orientation of its nozzle perpendicular to the plane where the wafer is located, and is inclined downward by 10° to 60°, so that the nozzle of the second nozzle arm is inclined relative to the plane where the wafer is located. Spray down.
  • the second nozzle arm is rotated downward around its axis direction by 20° to 50° relative to the orientation of its nozzle perpendicular to the plane of the wafer.
  • the nozzles of the first nozzle arm are formed as cylindrical nozzles with a diameter of not more than 1 mm to prevent the splash effect.
  • the nozzles of the second nozzle arm are arranged so as not to be perpendicular to the axis of the second nozzle arm.
  • the wafer processing apparatus realizes completely vertical drying by using the coupling of Marangoni effect, centrifugal force and gravity to save space, and effectively reduces the operating speed of the equipment to avoid back splashing through reasonable swing arm design. Improves equipment stability and eliminates some of the structures used to prevent backsplash, saving valuable space in wafer processing equipment and chip fabs, combining vertical marangoni drying and horizontal spin drying. Advantage.
  • FIG. 1 shows a perspective perspective view of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application
  • FIG. 2 shows a perspective view of a supply arm, a first nozzle arm, a second nozzle arm, etc. of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application;
  • FIG. 3 shows a perspective view of a supply arm, a first nozzle arm, a second nozzle arm, etc. of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application;
  • FIG. 4 shows a schematic diagram of the first nozzle arm of the vertical Marangoni wafer processing apparatus and its nozzles being disposed obliquely downward to avoid the rinsing liquid sprayed by the first nozzle arm and the claw of the driving mechanism from accumulating and staying in the driving mechanism according to an embodiment of the present application;
  • FIG. 5 shows the working principle of the vertical Marangoni wafer processing apparatus according to an embodiment of the present application, that is, it shows how the Marangoni force is coupled with centrifugal force and gravity during operation of the wafer processing apparatus according to the present application. stripping the liquid film;
  • FIG. 6A shows a partially enlarged schematic diagram of the technical effect of the second nozzle arm of the vertical Marangoni wafer processing apparatus and its nozzle tilted spraying to avoid residual rinse liquid droplets according to an embodiment of the present application;
  • FIG. 6B is a partial enlarged schematic diagram illustrating the second nozzle arm of the vertical Marangoni wafer processing apparatus and its two nozzles for back-hook oblique spraying according to an embodiment of the present application more clearly;
  • FIG. 6C more clearly shows a partial enlarged schematic diagram of the second nozzle arm and its two nozzle front-protrusion inclined configurations when the vertical Marangoni wafer processing apparatus rotates the wafer clockwise according to an embodiment of the present application.
  • the wafer processing apparatus 1 includes a box body 10 , a drive mechanism 20 , a supply arm 30 , a rotating shaft member 40 , etc., which are arranged in the box body 10 , and further includes a box body 10 that is arranged at the bottom of the box body 10 .
  • the motor assembly 50 wherein the driving mechanism 20 has a plurality of claws 21 to hold the wafer W and drive the wafer W to rotate vertically in the box 10 , and the supply arm 30 is driven by the motor assembly 50 in parallel to the wafer W. Oscillating in a vertical plane of the plane of W and feeding arm 30 is equipped with a nozzle assembly 3 at its free end so that fluid can be supplied to the global surface of the rotating wafer W via nozzle assembly 3 moving with feeding arm 30 .
  • the nozzle assembly 3 is configured to include a first nozzle arm 31 and a second nozzle arm 32, wherein the axes of the first nozzle arm 31 and the second nozzle arm 32 are parallel to each other and both are perpendicular to the axis of the rotating shaft member 40, and the end of the first nozzle arm 31
  • the end of the second nozzle arm 32 (near the free end) is configured with at least one nozzle 311 spraying toward the plane where the wafer is located
  • the end of the second nozzle arm 32 (near the free end) is configured with at least one nozzle 321 spraying toward the plane where the wafer is located.
  • two nozzles 321 are used as an example (only one can be seen in FIG.
  • the first nozzle arm 31 is arranged below the second nozzle arm 32 , so that when the supply arm 30 is in a non-vertical state, the first The nozzles 311 of the nozzle arm 31 are arranged below the nozzles 321 of the second nozzle arm 32 . It should be understood, however, that the present application is not limited in this regard.
  • the nozzles 311 are arranged so as to sweep over the center O of the wafer during the movement with the supply arm 30 and the first nozzle arm 31 , in other words, the supply arm 30 and the first nozzle arm 31
  • the sum of the lengths should be greater than 100mm and preferably greater than 150mm, that is, from the direction perpendicular to the plane of the wafer, it can pass through the center (center point) of the driving mechanism 20 during the movement process, so that the rotation of the wafer W can be combined
  • the movement and oscillation of the supply arm 30 causes the nozzles 311 to supply fluid to the global surface of the wafer side excluding the portion covered by the jaws.
  • the supply arm 30 is driven by the rotating shaft assembly 40 to revolve around a radially outer side of the driving mechanism 20 that is perpendicular to the plane of the wafer W.
  • the axis of the rotating shaft assembly 40 ie the axis of the rotating shaft of the rotating shaft assembly 40
  • the first nozzle arm 31 is formed in an L-shaped bent shape, that is, it has a long straight main arm portion 31M extending parallel to the supply arm 30 and a bent portion perpendicular to the main arm portion 31M that is bent substantially toward the plane of the wafer W.
  • the nozzle 311 formed as a vertical cylinder is disposed at the end of the bending portion 31S close to the plane of the wafer W toward the plane of the wafer W to spray deionized water (DIW, deionized water) or containing deionized water toward the surface of the wafer.
  • DIW deionized water
  • the second nozzle arm 32 is formed into an L-shaped bent shape, that is, it has a long and straight main arm portion 32M extending parallel to the supply arm 30 and a nozzle mounting portion 32S arranged toward the plane of the wafer.
  • the two nozzles 321 are disposed at the end of the nozzle mounting portion 32S close to the plane where the wafer W is located toward the plane of the wafer W to spray a dry gas containing surface-active components toward the wafer surface, such as a mixed gas containing isopropyl alcohol and nitrogen (IPA/N 2 ), wherein the surface component is isopropanol.
  • a dry gas containing surface-active components toward the wafer surface such as a mixed gas containing isopropyl alcohol and nitrogen (IPA/N 2 ), wherein the surface component is isopropanol.
  • IPA/N 2 isopropyl alcohol and nitrogen
  • the rinsing liquid sprayed onto the surface of the wafer W through the nozzles 311 of the first nozzle arm 31 will spread to form a liquid flow film 300 of an approximately helical asymmetric triangle due to the action of gravity and centrifugal force.
  • 300 starts from the drop point of the rinsing liquid on the wafer surface as the starting point and gradually expands and spreads downward in the direction of the wafer rotation, and forms a three-phase boundary line with the air and the wafer W (referred to as the three-phase boundary line, that is, the solid-liquid-gas boundary line).
  • the nozzle 311 is not directly oriented perpendicular to the wafer W
  • the plane where it is located (abbreviated as "wafer plane") is sprayed, but rotates around the axis of the main arm 31M together with the main arm 31M, and is inclined downward (lower right) by an angle ⁇ ; in other words, the first nozzle arm 31 can be rotated is fixedly mounted on the free end of the supply arm 30 , so that the spray angle of the nozzle 311 of the first nozzle arm relative to the plane of the wafer W can be adjusted by rotating and adjusting the first nozzle arm 31 .
  • the nozzles 311 of the first nozzle arm 31 are formed as cylindrical nozzles with a diameter of not more than 1 mm to avoid the rinsing liquid sprayed at an excessively large rate from contacting the rotating wafer under a specific supply flow rate in a wafer fabrication shop. Secondary sputtering or back-sputtering affects the drying effect, in fact, the diameter of the nozzle should not be too large, for example, not more than 5mm, because the supply pressure in the wafer fab is specific and there is a certain gap between the nozzle and the wafer.
  • the nozzle 311 of the first nozzle arm 31 is formed as a cylindrical nozzle having a diameter of 1.5 mm to 4.5 mm.
  • the first nozzle arm 31 may be arranged to rotate downward along its own axis by 0° to 50° so that the first nozzle 311 thereon sprays the rinsing liquid obliquely with respect to the surface of the wafer W, and is preferably inclined downward by 15° ° to 45°, so that the nozzle 311 can spray the rinsing liquid liquid obliquely in the direction away from the center of the wafer relative to the plane of the wafer, thereby increasing the contact area between the liquid column sprayed by the nozzle 311 and the surface of the wafer W,
  • the collision between the liquid column of the rinsing liquid and the wafer is made softer, and the secondary pollution of the wafer W caused by the liquid backsplash caused by the spraying is reduced, so that the liquid sprayed by the nozzle 311 can more effectively form a continuous
  • the stable and complete liquid film 300 creates more favorable conditions for the subsequent stripping of the liquid film based on the Marangoni effect.
  • the liquid flow film 300 is formed as a scattered bulk region or a dotted scattered region due to back-sputtering and sputtering, it is difficult to realize the Marangoni whole liquid film stripping operation described below, and the crystallinity cannot be realized. Round drying is especially important for eg hydrophobic surfaces.
  • the angle of the downward rotation and inclination of the first nozzle arm 31 is proportional to the hydrophobicity of the wafer surface, that is, the stronger the hydrophobicity of the wafer surface, the closer the downward rotation and inclination of the first nozzle arm 31 should be to 45° degree, even preferably close to 50 degrees; and since the wafer surface is a smooth and dense mirror surface, the angle of the downward rotation and inclination of the first nozzle arm 31 should not be less than 5°. It is easy to understand that spraying the liquid obliquely can increase the contact area because the area of the inclined section of the liquid column is larger than that of its front section, thereby reducing the contact force per unit cross-sectional area of the sprayed rinsing liquid liquid column.
  • the wafer W rotates clockwise; in fact, the wafer can rotate clockwise or Rotates counterclockwise; in Figures 1-3, the direction of velocity of the liquid jetted obliquely and the direction of the velocity of the wafer move have coincident components outward and downward along the radius of the wafer, further reducing vertical or counter jetting possible sputtering. It should be understood, however, that the present application is not limited in this regard.
  • Another beneficial effect of the above-mentioned oblique spraying is that, as shown in FIG. 4 , when the nozzle 311 sprays the rinsing liquid liquid vertically toward the claw 21 of the driving mechanism 20 , the liquid flow of the rinsing liquid will be sprayed vertically to the upper surface of the claw 21 .
  • the oblique spray nozzles 311 can more effectively flush out the engagement between the jaws 21 and the wafer.
  • the joint makes the liquid in it constantly renewed to avoid the long-term residual liquid reacting with the air and remaining liquid marks (water marks); and because the liquid flow obliquely ejected from the nozzle 311 is far away from the rotation center O of the wafer W (that is, the wafer
  • the velocity component of the center of the circle when the flow of the rinsing liquid collides with the jaws 21, the droplets generated by the collision have a greater probability or are more likely to move in the direction away from the center O of the wafer, reducing the droplets moving toward the center O of the wafer.
  • the movement in the O direction of the rotation center may cause backsplash (backsplash/backsplash) to the dried area, resulting in the possibility of secondary pollution.
  • the nozzles 311 of the first nozzle arm 31 spray a rinsing liquid such as deionized water DIW onto the wafer, while the nozzles of the second nozzle arm 32 321 spray a drying gas to the upper three-phase boundary line of the liquid flow film 300 on the wafer, and the drying gas is formed to at least contain a surface tension reducing agent such as isopropyl alcohol (IPA, iso-Propyl alcohol) that can reduce the surface tension of the rinsing liquid.
  • IPA isopropyl alcohol
  • a mixture of surface active substances is not limited in this respect, specifically, the content of deionized water DIW in the rinsing solution is not less than 90% in terms of mass or molar ratio.
  • the rinsing liquid sprayed onto the wafer W will form a generally triangular-shaped liquid flow that starts from the vicinity of the landing point of the rinsing liquid on the wafer and expands to the edge of the wafer.
  • the membrane 300 and the edge of the liquid membrane 300 form a "liquid-gas-solid" three-phase contact line with the ambient gas phase and the wafer solid phase.
  • the three-phase contact line at the edge of the liquid flow film 300 can be divided into two sections by the boundary of the point Q closest to the wafer rotation center O (the center of the wafer) of the liquid flow film 300, that is, the three-phase contact line on the side of the rotation center O in the figure. Contact lines, and three-phase contact lines on the edge side of the wafer.
  • the nozzle 321 of the second nozzle arm 32 which is arranged above the first nozzle arm 31 and is fixedly installed obliquely downward around the axis of the supply arm 30, can spray the drying gas obliquely downward and cover the liquid film 300 close to the crystal.
  • a part of the three-phase contact line on the side of the circle rotation center O specifically, covering the length of this section of the three-phase contact line extending 10mm to 200mm from the starting point Q and covering as long as possible, the starting point Q is the liquid The point closest to the center O of the wafer in the region of the flow film 300 . It should be understood, however, that the present application is not limited in this regard.
  • the surface active substances in the dry gas are rapidly dissolved in the liquid flow film 300, and the liquid in the liquid flow film 300 at the three-phase contact line on the side of the rotation center O will dissolve more surface active substances, causing the rotation center
  • the surface tension on the O side is reduced, so that a surface tension gradient from the rotation center O to the wafer edge is formed in the liquid flow film 300, and the direction of the surface tension gradient corresponding to the generated Marangoni stress F2 points to the lower edge of the wafer, and the rinsing solution
  • Marangoni stress F2 centrifugal force F1 and gravity
  • the second nozzle arm 32 is arranged to be inclined downward at an angle ⁇ along the axis of the supply arm 30 (ie, the second nozzle arm 32 ), while the second nozzle arm 32 is fixed.
  • the nozzles 321 of the arm 32 are arranged to spray obliquely toward the rear of the second nozzle arm 32 (ie, hook back), so that the drying gas nozzles can sweep back in the direction of the rotation axis of the supply arm 30 shown in the figure.
  • the purpose of making the nozzles 321 to be hooked and inclined can be achieved by providing two nozzle mounting parts 32S that are hooked back and inclined; alternatively, it is also possible to The nozzle mounting portion 32S perpendicular to the second nozzle arm 21 is not provided or is provided, and the purpose of making the nozzle 321 hook back and slanting spray is realized by the obliquely arranged cylindrical straight or curved nozzle 321; further, the two nozzle arms of the second nozzle arm
  • the return hook inclination angles ⁇ 1 and ⁇ 2 of the two nozzles 321 may be the same or different; if it is one nozzle 321 or two nozzles 321 have the same return hook inclination angle, they are collectively referred to as ⁇ . It should be understood, however, that the present application is not limited in this regard.
  • the configuration of the ⁇ angle and the ⁇ angle enables the drying gas nozzle 321 to spray and purge in the directions shown in FIG. 6A and FIG. 6B , providing the rinse liquid along the inner side of the jaws 21 (that is, the jaws close to the center of the wafer).
  • Inner surface the resultant force of the tangential force perpendicular to the wafer to the outside of the wafer surface and the leftward tangential force of the moving direction of the rinse liquid droplet as shown in Figure 6A, makes the remaining rinse liquid droplets more easily detached
  • the inner edge of the jaws prevents rinsing liquid residue or liquid marks. It should be understood, however, that the present application is not limited in this regard.
  • the second nozzle arm 32 is configured to be inclined at an angle of ⁇ and fixedly mounted to provide a forward (ie perpendicular to the wafer outward) tangential purging force for the rinsing fluid to help the rinsing fluid disengage from the wafer and the jaws,
  • the inclination of the nozzle 321 and the nozzle 322 at an angle of ⁇ can provide a tangential force to the left for the rinse liquid to help the rinse liquid to break away from the wafer W and the jaws 21; secondly, the configuration of the ⁇ and ⁇ angles makes the gap between the drying gas and the wafer.
  • the contact surface is enlarged, which is beneficial to make the drying gas cover more length of the three-phase contact line to improve the drying effect; especially, the second nozzle arm 32 is inclined at an angle of ⁇ to provide the drying gas with centrifugal force and Marango.
  • the downward purging force in the same direction of Nelly further promotes and improves the effect of Marangoni drying and stripping the liquid film.
  • the ⁇ angle is generally set to be greater than or equal to 10° and less than or equal to 10°. 60°, preferably the ⁇ angle is set to be greater than or equal to 20° and less than or equal to 50° to ensure that the drying gas can fully fuse with the upper three-phase boundary line of the liquid flow membrane 300 to generate a sufficiently large Marangoni force.
  • the nozzles 321 of the second nozzle arm 32 may also be configured to be inclined at an angle ⁇ toward the direction in which the second nozzle arm 32 extends (ie, the front of the extension), which mainly depends on the wafer processing apparatus according to the embodiment of the present application
  • the rotation direction of the wafer during operation is such that the nozzle 321 is tilted back toward the wafer rotation direction by an angle of ⁇ , where ⁇ is greater than or equal to -85° and less than or equal to 85°; when the wafer rotates clockwise as shown in FIG. 5 , ⁇ On the contrary, when the wafer rotates counterclockwise, ⁇ is a negative value.
  • ⁇ is configured to be greater than or equal to -50° and less than or equal to 50°. It should be understood, however, that the present application is not limited in this regard.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un dispositif de traitement vertical de plaquette de Marangoni, comprenant un mécanisme d'entraînement destiné à entraîner la rotation verticale d'une plaquette, un bras d'alimentation destiné à distribuer un fluide, et un corps de boîtier, le bras d'alimentation pouvant osciller verticalement et fournir un fluide sur la plaquette au moyen d'un ensemble buse disposé au niveau d'une extrémité libre du bras d'alimentation, et caractérisé en ce que l'ensemble buse comprend un premier bras de buse et un deuxième bras de buse ayant des buses, le premier bras de buse et le deuxième bras de buse s'étendant le long du bras d'alimentation et étant disposés de manière rotative et fixe au niveau de l'extrémité libre du bras d'alimentation.
PCT/CN2021/097222 2020-07-10 2021-05-31 Dispositif de traitement vertical de plaquette de marangoni WO2022007538A1 (fr)

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CN202010660051.2A CN111540702B (zh) 2020-07-10 2020-07-10 竖直马兰戈尼晶圆处理装置

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CN111540702B (zh) * 2020-07-10 2020-09-29 清华大学 竖直马兰戈尼晶圆处理装置
CN113097121A (zh) * 2021-03-30 2021-07-09 上海华力微电子有限公司 一种晶圆清洗装置及清洗方法
CN113471108B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 一种基于马兰戈尼效应的晶圆竖直旋转处理装置
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CN113488415B (zh) * 2021-07-06 2022-08-02 华海清科股份有限公司 晶圆后处理设备及其应用的具有匀流功能的通风系统

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