WO2022007538A1

WO2022007538A1 - Vertical marangoni wafer processing device

Info

Publication number: WO2022007538A1
Application number: PCT/CN2021/097222
Authority: WO
Inventors: 李长坤; 赵德文; 路新春
Original assignee: 清华大学; 华海清科股份有限公司
Priority date: 2020-07-10
Filing date: 2021-05-31
Publication date: 2022-01-13
Also published as: CN111540702B; CN111540702A

Abstract

A vertical marangoni wafer processing device, comprising a driving mechanism for driving a wafer to rotate vertically, a supply arm for delivering fluid, and a box body, wherein the supply arm can swing vertically and supply fluid onto the wafer by means of a nozzle assembly provided at a free end of the supply arm, and characterized in that the nozzle assembly comprises a first nozzle arm and a second nozzle arm having nozzles, the first nozzle arm and the second nozzle arm extending along the supply arm and being rotatably and fixedly provided at the free end of the supply arm.

Description

Vertical Marangoni Wafer Handling Unit

technical field

The present application relates to the field of semiconductor manufacturing equipment, in particular to a vertical Marangoni wafer processing device.

Background technique

Wafer manufacturing is a key link restricting the development of the VLSI (ie chip, IC, Integrated Circuit Chip) industry. As the feature size of integrated circuits continues to shrink, the wafer surface quality requirements are getting higher and higher, so the wafer manufacturing process has more and more stringent control over the size and number of defects. In the logic chip manufacturing process, when the feature size develops from 14nm to 7nm, the control range of pollutants above 19nm is also reduced from 100 to 50, gradually approaching the limit of cleaning technology and measurement technology. Contamination is an important factor that causes the deterioration of wafer surface quality and even defects. Therefore, it is necessary to use cleaning technology to desorb the contaminants on the wafer surface to obtain an ultra-clean surface, especially after chemical mechanical polishing (CMP, Chemical Mechanical Polishing). During cleaning and drying, it is easy to encounter liquid mark defects (also known as water marks), which will lead to local changes in oxide thickness and seriously affect the chip manufacturing yield.

Therefore, it is crucial to avoid liquid streaks during drying. The wettability of the wafer has a significant effect on the formation of liquid streaks, and it is more prone to create liquid streaks on hydrophobic surfaces because the liquid film on the hydrophobic film is easily broken into isolated droplets and evaporates in oxygen-containing air Causes fluid streaks.

Compared with the traditional Spin Rinse Dry (SRD, Spin Rinse Dry), wafer drying based on the Marangoni effect has received extensive attention due to its excellent performance in eliminating liquid streak defects. The Marangoni effect is an interfacial convection phenomenon caused by surface tension gradients. An existing drying technique based on the Marangoni effect is to blow a wafer-air-liquid "meniscus" such as IPA containing isopropyl alcohol onto the wafer-air-liquid "meniscus" when the wafer is removed from a water bath of deionized water. The organic vapor induced by the Marangoni effect realizes the reflow of the attached liquid, thereby obtaining a fully dried wafer, which is generally called Marangoni tira drying. Related patents can be found in Chinese patent applications CN201810659303.2 and CN201810659303. 2.

However, the common problems of SRD and Marangoni tira drying in the prior art include large equipment volume, complex structure, high-speed backsplash, etc.; The body needs to be composed of a vertical receiving part and an inclined pulling part, so it takes up a lot of space and is difficult to integrate. For SRD, it needs to rotate at high speed horizontally to provide a large centrifugal force to drive off the liquid on the surface of the wafer. High rotational speed may cause a series of problems such as back splash. It should be pointed out that although there is a horizontal Marangoni drying technology, because the wafers are generally transported vertically inside the CMP equipment, the wafers are flipped from vertical to horizontal and then cleaned and dried. And after cleaning and drying, the wafer is turned from a horizontal state to a vertical state, which not only affects the efficiency of the wafer transfer operation, but also may cause a series of problems such as wafer damage.

Therefore, there is an urgent need to provide a wafer cleaning and drying device that saves space, has a simple structure and is stable in operation.

SUMMARY OF THE INVENTION

The purpose of the present application is to provide a vertical Marangoni wafer processing device, which aims to partially solve the above problems to a certain extent, which improves the wafer drying effect, saves space, improves equipment stability and reduces failure rate.

According to one aspect of the present application, there is provided a vertical Marangoni wafer processing apparatus, comprising: a drive mechanism for vertically rotating wafers, a supply arm for conveying fluid, and a box; the supply arm can Swing vertically and supply fluid onto the wafer via a nozzle assembly disposed at its free end; characterized in that the nozzle assembly includes a first nozzle arm and a second nozzle arm having nozzles, the first nozzle The arm and the second nozzle arm extend along the supply arm, and are rotatably fixed to the free end of the supply arm.

Preferably, the first nozzle arm is located below a second nozzle arm, the first nozzle arm having one nozzle and the second nozzle arm having at least one nozzle.

Preferably, the second nozzle arm has two nozzles.

Preferably, the nozzles of the first nozzle arm are arranged perpendicular to the first nozzle arm, and the first nozzle arm is inclined downward relative to the orientation of its nozzle perpendicular to the plane on which the wafer is located so that its nozzle faces the wafer Inclined jet.

Preferably, the first nozzle arm is inclined downward about its axis by 0° to 50° with respect to the orientation of its nozzle perpendicular to the plane of the wafer.

Preferably, the first nozzle arm is inclined downward about its axis by 15° to 45° with respect to the orientation of its nozzle perpendicular to the plane of the wafer.

Preferably, the second nozzle arm is rotated downward about its axis direction relative to the orientation of its nozzle perpendicular to the plane where the wafer is located, and is inclined downward by 10° to 60°, so that the nozzle of the second nozzle arm is inclined relative to the plane where the wafer is located. Spray down.

Preferably, the second nozzle arm is rotated downward around its axis direction by 20° to 50° relative to the orientation of its nozzle perpendicular to the plane of the wafer.

Preferably, the nozzles of the first nozzle arm are formed as cylindrical nozzles with a diameter of not more than 1 mm to prevent the splash effect.

Preferably, the nozzles of the second nozzle arm are arranged so as not to be perpendicular to the axis of the second nozzle arm.

The wafer processing apparatus according to the embodiment of the present application realizes completely vertical drying by using the coupling of Marangoni effect, centrifugal force and gravity to save space, and effectively reduces the operating speed of the equipment to avoid back splashing through reasonable swing arm design. Improves equipment stability and eliminates some of the structures used to prevent backsplash, saving valuable space in wafer processing equipment and chip fabs, combining vertical marangoni drying and horizontal spin drying. Advantage.

Description of drawings

Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

1 shows a perspective perspective view of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application;

2 shows a perspective view of a supply arm, a first nozzle arm, a second nozzle arm, etc. of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application;

3 shows a perspective view of a supply arm, a first nozzle arm, a second nozzle arm, etc. of a vertical Marangoni wafer processing apparatus according to an embodiment of the present application;

4 shows a schematic diagram of the first nozzle arm of the vertical Marangoni wafer processing apparatus and its nozzles being disposed obliquely downward to avoid the rinsing liquid sprayed by the first nozzle arm and the claw of the driving mechanism from accumulating and staying in the driving mechanism according to an embodiment of the present application;

FIG. 5 shows the working principle of the vertical Marangoni wafer processing apparatus according to an embodiment of the present application, that is, it shows how the Marangoni force is coupled with centrifugal force and gravity during operation of the wafer processing apparatus according to the present application. stripping the liquid film;

6A shows a partially enlarged schematic diagram of the technical effect of the second nozzle arm of the vertical Marangoni wafer processing apparatus and its nozzle tilted spraying to avoid residual rinse liquid droplets according to an embodiment of the present application;

FIG. 6B is a partial enlarged schematic diagram illustrating the second nozzle arm of the vertical Marangoni wafer processing apparatus and its two nozzles for back-hook oblique spraying according to an embodiment of the present application more clearly;

FIG. 6C more clearly shows a partial enlarged schematic diagram of the second nozzle arm and its two nozzle front-protrusion inclined configurations when the vertical Marangoni wafer processing apparatus rotates the wafer clockwise according to an embodiment of the present application.

detailed description

The present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the relevant inventive points, rather than limit the invention. In addition, it should be noted that, for the convenience of description, only the parts related to the invention are shown in the drawings.

It should be noted that the embodiments in the present application and the features of the embodiments may be combined with each other in the case of no conflict. In addition, it should be noted that the terms used in this application, such as front, rear, upper, lower, left, right, top, bottom, front, back, horizontal, vertical, etc., are used for the purpose of To aid in the understanding of relative positions or orientations, it is not intended to limit the orientation of any device or structure.

The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

As shown in FIG. 1 , the wafer processing apparatus 1 according to the present application includes a box body 10 , a drive mechanism 20 , a supply arm 30 , a rotating shaft member 40 , etc., which are arranged in the box body 10 , and further includes a box body 10 that is arranged at the bottom of the box body 10 . The motor assembly 50 , wherein the driving mechanism 20 has a plurality of claws 21 to hold the wafer W and drive the wafer W to rotate vertically in the box 10 , and the supply arm 30 is driven by the motor assembly 50 in parallel to the wafer W. Oscillating in a vertical plane of the plane of W and feeding arm 30 is equipped with a nozzle assembly 3 at its free end so that fluid can be supplied to the global surface of the rotating wafer W via nozzle assembly 3 moving with feeding arm 30 .

It should be noted that, the specific embodiments and specific examples of the present application are described and described in a state where the wafer processing apparatus according to the present application is in a stationary non-operating state, and in this state, the supply arm 30 is generally horizontal position, but this does not mean that the wafer processing apparatus 1 according to the embodiment of the present application is inoperable, nor does it mean that the supply arm 30 is fixed and immovable.

As shown in Figures 1 and 2, in order to realize the drying of the wafer W by means of centrifugal force and the Marangoni Effect, the rinsing liquid sprayed on the surface of the wafer W is completely peeled off to achieve the complete drying of the wafer. The nozzle assembly 3 is configured to include a first nozzle arm 31 and a second nozzle arm 32, wherein the axes of the first nozzle arm 31 and the second nozzle arm 32 are parallel to each other and both are perpendicular to the axis of the rotating shaft member 40, and the end of the first nozzle arm 31 The end of the second nozzle arm 32 (near the free end) is configured with at least one nozzle 311 spraying toward the plane where the wafer is located, and the end of the second nozzle arm 32 (near the free end) is configured with at least one nozzle 321 spraying toward the plane where the wafer is located. In the embodiment, two nozzles 321 are used as an example (only one can be seen in FIG. 2 ), and the first nozzle arm 31 is arranged below the second nozzle arm 32 , so that when the supply arm 30 is in a non-vertical state, the first The nozzles 311 of the nozzle arm 31 are arranged below the nozzles 321 of the second nozzle arm 32 . It should be understood, however, that the present application is not limited in this regard.

In order to supply the fluid to the entire surface of the wafer W, the nozzles 311 are arranged so as to sweep over the center O of the wafer during the movement with the supply arm 30 and the first nozzle arm 31 , in other words, the supply arm 30 and the first nozzle arm 31 The sum of the lengths should be greater than 100mm and preferably greater than 150mm, that is, from the direction perpendicular to the plane of the wafer, it can pass through the center (center point) of the driving mechanism 20 during the movement process, so that the rotation of the wafer W can be combined The movement and oscillation of the supply arm 30 causes the nozzles 311 to supply fluid to the global surface of the wafer side excluding the portion covered by the jaws.

As shown in FIGS. 1 to 3 , during the operation of the wafer processing apparatus 1 according to the present application, the supply arm 30 is driven by the rotating shaft assembly 40 to revolve around a radially outer side of the driving mechanism 20 that is perpendicular to the plane of the wafer W. The axis of the rotating shaft assembly 40 (ie the axis of the rotating shaft of the rotating shaft assembly 40 ) swings. The first nozzle arm 31 is formed in an L-shaped bent shape, that is, it has a long straight main arm portion 31M extending parallel to the supply arm 30 and a bent portion perpendicular to the main arm portion 31M that is bent substantially toward the plane of the wafer W. 31S, the nozzle 311 formed as a vertical cylinder is disposed at the end of the bending portion 31S close to the plane of the wafer W toward the plane of the wafer W to spray deionized water (DIW, deionized water) or containing deionized water toward the surface of the wafer. Rinse liquid of ionized water; similarly, the second nozzle arm 32 is formed into an L-shaped bent shape, that is, it has a long and straight main arm portion 32M extending parallel to the supply arm 30 and a nozzle mounting portion 32S arranged toward the plane of the wafer. , the two nozzles 321 are disposed at the end of the nozzle mounting portion 32S close to the plane where the wafer W is located toward the plane of the wafer W to spray a dry gas containing surface-active components toward the wafer surface, such as a mixed gas containing isopropyl alcohol and nitrogen ( IPA/N ₂ ), wherein the surface component is isopropanol. However, it should be understood that the present application is not limited in this respect, that is, the

nozzles

321 and 311 may be directly installed and connected to the first nozzle arm 31 and the second nozzle arm without the bending portion 31S and the nozzle mounting portion 32S 32, even directly mounted to the supply arm 30.

As shown in FIG. 3 , the rinsing liquid sprayed onto the surface of the wafer W through the nozzles 311 of the first nozzle arm 31 will spread to form a liquid flow film 300 of an approximately helical asymmetric triangle due to the action of gravity and centrifugal force. 300 starts from the drop point of the rinsing liquid on the wafer surface as the starting point and gradually expands and spreads downward in the direction of the wafer rotation, and forms a three-phase boundary line with the air and the wafer W (referred to as the three-phase boundary line, that is, the solid-liquid-gas boundary line). , namely wafer, rinsing liquid, and air three-phase), specifically, including the upper three-phase boundary line, the right end three-phase boundary line and the lower three-phase boundary line, the upper three-phase boundary line, the end three-phase boundary line, The lower three-phase boundary lines join together to define the region of the flow membrane 300 .

It should be noted that, as shown in FIGS. 2 and 3 , although the axis of the long straight cylindrical tubular nozzle 311 is perpendicular to the main arm portion 31M of the first nozzle arm 31 , the nozzle 311 is not directly oriented perpendicular to the wafer W The plane where it is located (abbreviated as "wafer plane") is sprayed, but rotates around the axis of the main arm 31M together with the main arm 31M, and is inclined downward (lower right) by an angle α; in other words, the first nozzle arm 31 can be rotated is fixedly mounted on the free end of the supply arm 30 , so that the spray angle of the nozzle 311 of the first nozzle arm relative to the plane of the wafer W can be adjusted by rotating and adjusting the first nozzle arm 31 .

In addition, the nozzles 311 of the first nozzle arm 31 are formed as cylindrical nozzles with a diameter of not more than 1 mm to avoid the rinsing liquid sprayed at an excessively large rate from contacting the rotating wafer under a specific supply flow rate in a wafer fabrication shop. Secondary sputtering or back-sputtering affects the drying effect, in fact, the diameter of the nozzle should not be too large, for example, not more than 5mm, because the supply pressure in the wafer fab is specific and there is a certain gap between the nozzle and the wafer. When the nozzle diameter is too large, it is difficult to ensure that the rinsing liquid can be sprayed to the wafer surface in a straight line, and even some of the rinsing liquid cannot be sprayed to the wafer surface. Therefore, preferably, the nozzle 311 of the first nozzle arm 31 is formed as a cylindrical nozzle having a diameter of 1.5 mm to 4.5 mm.

Further, the first nozzle arm 31 may be arranged to rotate downward along its own axis by 0° to 50° so that the first nozzle 311 thereon sprays the rinsing liquid obliquely with respect to the surface of the wafer W, and is preferably inclined downward by 15° ° to 45°, so that the nozzle 311 can spray the rinsing liquid liquid obliquely in the direction away from the center of the wafer relative to the plane of the wafer, thereby increasing the contact area between the liquid column sprayed by the nozzle 311 and the surface of the wafer W, The collision between the liquid column of the rinsing liquid and the wafer is made softer, and the secondary pollution of the wafer W caused by the liquid backsplash caused by the spraying is reduced, so that the liquid sprayed by the nozzle 311 can more effectively form a continuous, The stable and complete liquid film 300 creates more favorable conditions for the subsequent stripping of the liquid film based on the Marangoni effect. On the contrary, if the liquid flow film 300 is formed as a scattered bulk region or a dotted scattered region due to back-sputtering and sputtering, it is difficult to realize the Marangoni whole liquid film stripping operation described below, and the crystallinity cannot be realized. Round drying is especially important for eg hydrophobic surfaces. In fact, the angle of the downward rotation and inclination of the first nozzle arm 31 is proportional to the hydrophobicity of the wafer surface, that is, the stronger the hydrophobicity of the wafer surface, the closer the downward rotation and inclination of the first nozzle arm 31 should be to 45° degree, even preferably close to 50 degrees; and since the wafer surface is a smooth and dense mirror surface, the angle of the downward rotation and inclination of the first nozzle arm 31 should not be less than 5°. It is easy to understand that spraying the liquid obliquely can increase the contact area because the area of the inclined section of the liquid column is larger than that of its front section, thereby reducing the contact force per unit cross-sectional area of the sprayed rinsing liquid liquid column.

In addition, during the operation of the wafer processing apparatus 1 according to the embodiment of the present application, when viewed from the direction shown in FIG. 1 , the wafer W rotates clockwise; in fact, the wafer can rotate clockwise or Rotates counterclockwise; in Figures 1-3, the direction of velocity of the liquid jetted obliquely and the direction of the velocity of the wafer move have coincident components outward and downward along the radius of the wafer, further reducing vertical or counter jetting possible sputtering. It should be understood, however, that the present application is not limited in this regard.

Another beneficial effect of the above-mentioned oblique spraying is that, as shown in FIG. 4 , when the nozzle 311 sprays the rinsing liquid liquid vertically toward the claw 21 of the driving mechanism 20 , the liquid flow of the rinsing liquid will be sprayed vertically to the upper surface of the claw 21 . However, it is difficult to flush out impurities or liquids in the engagement area between the jaws 21 and the wafer, and it is easy to produce residual liquid marks after the wafer W is dried, and the oblique spray nozzles 311 can more effectively flush out the engagement between the jaws 21 and the wafer. The joint makes the liquid in it constantly renewed to avoid the long-term residual liquid reacting with the air and remaining liquid marks (water marks); and because the liquid flow obliquely ejected from the nozzle 311 is far away from the rotation center O of the wafer W (that is, the wafer The velocity component of the center of the circle), when the flow of the rinsing liquid collides with the jaws 21, the droplets generated by the collision have a greater probability or are more likely to move in the direction away from the center O of the wafer, reducing the droplets moving toward the center O of the wafer. The movement in the O direction of the rotation center may cause backsplash (backsplash/backsplash) to the dried area, resulting in the possibility of secondary pollution.

Next, it is explained how to achieve wafer drying by peeling off the above-mentioned flow film. Technically speaking, it is necessary to use the nozzle 321 on the second nozzle arm 32 to use the Marangoni effect to spray the liquid film 300 formed by the nozzle 311 onto the surface of the wafer W to peel off the surface of the wafer to complete the surface treatment. dry.

As shown in FIGS. 3 and 5 , in order to use the Marangoni effect to dry the wafer, the nozzles 311 of the first nozzle arm 31 spray a rinsing liquid such as deionized water DIW onto the wafer, while the nozzles of the second nozzle arm 32 321 spray a drying gas to the upper three-phase boundary line of the liquid flow film 300 on the wafer, and the drying gas is formed to at least contain a surface tension reducing agent such as isopropyl alcohol (IPA, iso-Propyl alcohol) that can reduce the surface tension of the rinsing liquid. A mixture of surface active substances. However, it should be understood that the present application is not limited in this respect, specifically, the content of deionized water DIW in the rinsing solution is not less than 90% in terms of mass or molar ratio.

Further, under the rotation of the wafer W, the rinsing liquid sprayed onto the wafer W will form a generally triangular-shaped liquid flow that starts from the vicinity of the landing point of the rinsing liquid on the wafer and expands to the edge of the wafer. The membrane 300 and the edge of the liquid membrane 300 form a "liquid-gas-solid" three-phase contact line with the ambient gas phase and the wafer solid phase. The three-phase contact line at the edge of the liquid flow film 300 can be divided into two sections by the boundary of the point Q closest to the wafer rotation center O (the center of the wafer) of the liquid flow film 300, that is, the three-phase contact line on the side of the rotation center O in the figure. Contact lines, and three-phase contact lines on the edge side of the wafer.

The nozzle 321 of the second nozzle arm 32, which is arranged above the first nozzle arm 31 and is fixedly installed obliquely downward around the axis of the supply arm 30, can spray the drying gas obliquely downward and cover the liquid film 300 close to the crystal. A part of the three-phase contact line on the side of the circle rotation center O, specifically, covering the length of this section of the three-phase contact line extending 10mm to 200mm from the starting point Q and covering as long as possible, the starting point Q is the liquid The point closest to the center O of the wafer in the region of the flow film 300 . It should be understood, however, that the present application is not limited in this regard.

From a technical point of view, the surface active substances in the dry gas are rapidly dissolved in the liquid flow film 300, and the liquid in the liquid flow film 300 at the three-phase contact line on the side of the rotation center O will dissolve more surface active substances, causing the rotation center The surface tension on the O side is reduced, so that a surface tension gradient from the rotation center O to the wafer edge is formed in the liquid flow film 300, and the direction of the surface tension gradient corresponding to the generated Marangoni stress F2 points to the lower edge of the wafer, and the rinsing solution Under the combined action of Marangoni stress F2, centrifugal force F1 and gravity, the flow moves to the lower edge of the wafer as the supply arm 30 sweeps toward the edge of the wafer. The circular surface area gradually moves to the lower edge of the wafer until it is separated from the surface of the wafer to achieve the drying operation of the wafer. It should be understood, however, that the present application is not limited in this regard.

Further, the claws 21, especially the inner side surfaces of the claws 21 close to the center of the wafer W, block the centrifugal movement of the rinsing liquid to a certain extent, thereby causing the risk of residual rinsing liquid and affecting the drying near the claws 21. Effect. To this end, as shown in FIGS. 2 , 6A and 6B, the second nozzle arm 32 is arranged to be inclined downward at an angle β along the axis of the supply arm 30 (ie, the second nozzle arm 32 ), while the second nozzle arm 32 is fixed. The nozzles 321 of the arm 32 are arranged to spray obliquely toward the rear of the second nozzle arm 32 (ie, hook back), so that the drying gas nozzles can sweep back in the direction of the rotation axis of the supply arm 30 shown in the figure. Specifically, for the second nozzle arm 32 having two nozzles 321 , the purpose of making the nozzles 321 to be hooked and inclined can be achieved by providing two nozzle mounting parts 32S that are hooked back and inclined; alternatively, it is also possible to The nozzle mounting portion 32S perpendicular to the second nozzle arm 21 is not provided or is provided, and the purpose of making the nozzle 321 hook back and slanting spray is realized by the obliquely arranged cylindrical straight or curved nozzle 321; further, the two nozzle arms of the second nozzle arm The return hook inclination angles θ ₁ and θ _{2 of the} two nozzles 321 may be the same or different; if it is one nozzle 321 or two nozzles 321 have the same return hook inclination angle, they are collectively referred to as θ. It should be understood, however, that the present application is not limited in this regard.

The configuration of the β angle and the θ angle enables the drying gas nozzle 321 to spray and purge in the directions shown in FIG. 6A and FIG. 6B , providing the rinse liquid along the inner side of the jaws 21 (that is, the jaws close to the center of the wafer). Inner surface) the resultant force of the tangential force perpendicular to the wafer to the outside of the wafer surface and the leftward tangential force of the moving direction of the rinse liquid droplet as shown in Figure 6A, makes the remaining rinse liquid droplets more easily detached The inner edge of the jaws prevents rinsing liquid residue or liquid marks. It should be understood, however, that the present application is not limited in this regard.

Specifically, the second nozzle arm 32 is configured to be inclined at an angle of β and fixedly mounted to provide a forward (ie perpendicular to the wafer outward) tangential purging force for the rinsing fluid to help the rinsing fluid disengage from the wafer and the jaws, The inclination of the nozzle 321 and the nozzle 322 at an angle of θ can provide a tangential force to the left for the rinse liquid to help the rinse liquid to break away from the wafer W and the jaws 21; secondly, the configuration of the β and θ angles makes the gap between the drying gas and the wafer. The contact surface is enlarged, which is beneficial to make the drying gas cover more length of the three-phase contact line to improve the drying effect; especially, the second nozzle arm 32 is inclined at an angle of β to provide the drying gas with centrifugal force and Marango. The downward purging force in the same direction of Nelly further promotes and improves the effect of Marangoni drying and stripping the liquid film.

Generally speaking, considering that the rotation speed of the wafer processing apparatus according to the embodiment of the present application is 60 to 800 rpm, preferably 80 to 500 rpm, the β angle is generally set to be greater than or equal to 10° and less than or equal to 10°. 60°, preferably the β angle is set to be greater than or equal to 20° and less than or equal to 50° to ensure that the drying gas can fully fuse with the upper three-phase boundary line of the liquid flow membrane 300 to generate a sufficiently large Marangoni force.

It should be noted that the nozzles 321 of the second nozzle arm 32 may also be configured to be inclined at an angle θ toward the direction in which the second nozzle arm 32 extends (ie, the front of the extension), which mainly depends on the wafer processing apparatus according to the embodiment of the present application The rotation direction of the wafer during operation is such that the nozzle 321 is tilted back toward the wafer rotation direction by an angle of θ, where θ is greater than or equal to -85° and less than or equal to 85°; when the wafer rotates clockwise as shown in FIG. 5 , θ On the contrary, when the wafer rotates counterclockwise, θ is a negative value. At this time, the nozzle 321 of the second nozzle arm 32 protrudes forward (protrusion) along the axial direction of the second nozzle arm. Tilt instead of tick back as shown in Figure 6C. Preferably, θ is configured to be greater than or equal to -50° and less than or equal to 50°. It should be understood, however, that the present application is not limited in this regard.

The above description is only a preferred embodiment of the present application and an illustration of the applied technical principles. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to the technical solution formed by the specific combination of the above-mentioned technical features, and should also cover the above-mentioned technical features without departing from the inventive concept. Other technical solutions formed by any combination of its equivalent features. For example, a technical solution is formed by replacing the above-mentioned features with the technical features disclosed in this application (but not limited to) with similar functions.

Claims

A vertical Marangoni wafer processing device, comprising: a drive mechanism for vertically rotating wafers, a supply arm for conveying fluid, and a box;

the supply arm is vertically swingable and supplies fluid onto the wafer via a nozzle assembly disposed at its free end;

The nozzle assembly includes a first nozzle arm and a second nozzle arm having nozzles, the first nozzle arm and the second nozzle arm extend along the supply arm, and are rotatably fixed to the supply arm. the free end;

the first nozzle arm is positioned below a second nozzle arm, the first nozzle arm having one nozzle and the second nozzle arm having two nozzles;

The nozzles of the first nozzle arm are arranged to be perpendicular to the first nozzle arm, and the first nozzle arm is inclined downward relative to an orientation having its nozzles perpendicular to the plane on which the wafer is located so that its nozzles spray obliquely toward the wafer;

The first nozzle arm and its nozzles are used for conveying and spraying rinsing liquid, and the second nozzle arm and its nozzles are used for conveying and spraying drying gas containing surface-active substances.
The wafer processing apparatus of claim 1, wherein the first nozzle arm is inclined downward about its axis by 0° to 50° relative to an orientation in which its nozzle is perpendicular to the plane of the wafer.
3. The wafer processing apparatus of claim 2, wherein the first nozzle arm is inclined downward about its axis by 15° to 45° relative to an orientation in which its nozzle is perpendicular to the plane of the wafer.
4. The wafer processing apparatus of claim 3, wherein the second nozzle arm is rotated downward about its axis direction by 10° to 60° relative to the orientation of its nozzle perpendicular to the wafer plane, so that the first The nozzles of the two nozzle arms are sprayed obliquely downward relative to the plane of the wafer.
4. The wafer processing apparatus according to claim 4, wherein the second nozzle arm is rotated downward about its axis direction by 20° to 50° relative to the orientation of its nozzle perpendicular to the plane of the wafer.
The wafer processing apparatus of claim 1, wherein the nozzle of the first nozzle arm is formed as a cylindrical nozzle with a diameter of not more than 1 mm to avoid back splashing.
The wafer processing apparatus according to claim 1, wherein the nozzles of the second nozzle arm are arranged so as not to be perpendicular to the axis of the second nozzle arm.
The wafer processing apparatus according to claim 1, wherein the content of deionized water in the rinse solution is not less than 90%.