WO2022007069A1 - 复合介质覆铜板的制备方法及印刷线路板 - Google Patents

复合介质覆铜板的制备方法及印刷线路板 Download PDF

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Publication number
WO2022007069A1
WO2022007069A1 PCT/CN2020/106661 CN2020106661W WO2022007069A1 WO 2022007069 A1 WO2022007069 A1 WO 2022007069A1 CN 2020106661 W CN2020106661 W CN 2020106661W WO 2022007069 A1 WO2022007069 A1 WO 2022007069A1
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preset
clad laminate
preparation
composite
substrate
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PCT/CN2020/106661
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English (en)
French (fr)
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黄国创
王和志
恽振阳
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瑞声声学科技(深圳)有限公司
瑞声科技（南京）有限公司
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Publication of WO2022007069A1 publication Critical patent/WO2022007069A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/082—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/085—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B32B27/322—Layered products comprising a layer of synthetic resin comprising polyolefins comprising halogenated polyolefins, e.g. PTFE
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1808—Handling of layers or the laminate characterised by the laying up of the layers
    • B32B38/1816—Cross feeding of one or more of the layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/022—Mechanical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/08—Interconnection of layers by mechanical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/03—3 layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10—Inorganic particles
    • B32B2264/107—Ceramic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards

Definitions

  • the invention relates to the technical field of the preparation of composite dielectric copper clad laminates, in particular to a preparation method of composite dielectric copper clad laminates and a printed circuit board.
  • Polytetrafluoroethylene has excellent microwave performance, its dielectric constant ( ⁇ r) is 2.0-2.2, dielectric loss (tan ⁇ ) is 0.0002 ⁇ 0.0003, and it has good chemical stability and thermal stability. Suitable for high frequency microwave circuits.
  • the composite medium prepared by compounding fine electronic ceramics with PTFE resin as the matrix has a series of advantages such as excellent high-frequency dielectric properties, low-cost metallization, convenient circuit processing and installation, and is not easy to be broken when used in vibration occasions.
  • ⁇ r dielectric constant
  • tan ⁇ dielectric loss
  • the composite dielectric substrate obtained by impregnating glass fiber cloth with PTFE emulsion is the most common and widely used product. It has good dimensional stability and low manufacturing cost, but because the dielectric constant of glass fiber cloth itself is relatively low , so the dielectric constant of the obtained glass fiber reinforced PTFE substrate is not high, about 2.3-2.8. In order to obtain a composite material with a higher dielectric constant, it is necessary to dope ceramic powder with a high dielectric constant. At the same time, because the glass fiber cloth contains more metal oxides and metal salt impurities, the dielectric loss of the composite substrate is also high. In addition, peel strength is an important indicator to examine the performance of CCL, and it is an indicator of quality problems that often occur in the production of CCL. Low peel strength will cause the copper foil to fall off in the subsequent processing, such as printing plate processing or installation welding, which will eventually affect the normal processing of the entire device and reduce the yield.
  • the invention mainly provides a preparation method and a printed circuit board of a composite medium copper clad board, which can solve the problem that the composite medium copper clad board obtained by impregnating the PTFE emulsion with glass fiber cloth in the prior art causes the copper foil in the subsequent process due to the low peeling strength. fall off, etc.
  • a technical solution adopted in the present invention is to provide a preparation method of a composite dielectric copper clad laminate, the preparation method comprising: forming a green substrate by using an emulsion of a fluorine-containing material and a ceramic filling material; pre-sintering the green substrate to form a composite substrate; vacuum sintering the composite substrate with a preset sintering temperature and a preset hot pressing pressure to form the composite dielectric copper clad laminate; wherein the preset sintering temperature range is is 360°C-400°C, and the preset hot pressing pressure range is 0Mpa-8Mpa.
  • sintering the composite substrate at a preset sintering temperature and a preset hot pressing pressure to form the composite dielectric copper clad laminate includes: covering the opposite upper and lower surfaces of the composite substrate with a preset thickness put the composite substrate covered with copper foil into a mold or a hot press; sinter the composite substrate covered with copper foil at a preset sintering temperature and a preset hot pressing pressure to form the composite substrate Dielectric copper clad laminate.
  • the preset thickness of the copper foil is 10 ⁇ m-40 ⁇ m.
  • the preset thickness of the copper foil is 18 ⁇ m-35 ⁇ m.
  • the range of the preset sintering temperature is 370°C-380°C.
  • forming the green substrate by using the emulsion of fluorine-containing material and the ceramic filling material includes: adding 20-60 parts by weight of the emulsion of fluorine-containing material into the container for stirring; respectively filling 1-5 parts by weight of the first ceramic
  • the material and 40-70 parts by weight of the second ceramic filler material are added to the emulsion of the fluorine-containing material to form a mixed emulsion; the mixed emulsion is subjected to demulsification treatment; the mixed emulsion after demulsification is baked to form a dough-like material; the dough-like material is shaped to form the green substrate, and a total of 100 parts by weight of the fluorine-containing material, the first ceramic filling material and the second ceramic filling material is performed.
  • the fluorine-containing material is one of polytetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene and perfluoroalkyl vinyl ether.
  • the ceramic filling material is one of silicon dioxide, titanium dioxide, aluminum oxide, aluminum nitride, magnesium oxide, calcium oxide, zinc oxide and barium oxide.
  • the temperature range for pre-sintering the green substrate is 240°C-320°C
  • the time range for pre-sintering is 2h-12h.
  • another technical solution adopted by the present invention is to provide a printed circuit board, the printed circuit board comprising the composite dielectric copper clad laminate prepared by any of the above preparation methods.
  • the present invention provides a preparation method of a composite medium copper clad laminate and a printed circuit board, and by adjusting the thermal process, the peel strength of the composite medium copper clad laminate is greatly improved , which can ensure that the copper clad laminate will not fall off the copper foil during the subsequent processing.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for preparing a composite dielectric copper clad laminate of the present invention
  • FIG. 2 is a schematic flowchart of an embodiment of step S100 in FIG. 1 of the present invention.
  • FIG. 3 is a schematic flowchart of an embodiment of step S300 in FIG. 1 of the present invention.
  • FIG. 1 is a schematic flowchart of an embodiment of a method for preparing a composite dielectric copper clad laminate according to the present invention. As shown in FIG. 1 , the method for preparing a composite dielectric copper clad laminate provided by the present invention specifically includes the following steps:
  • the fluorine-containing material provided in the present invention may specifically be one of polytetrafluoroethylene (PTFE), hexafluoropropylene (HFP), tetrafluoroethylene (TFE) and perfluoroalkyl vinyl ether (PAVE).
  • PTFE polytetrafluoroethylene
  • HFP hexafluoropropylene
  • TFE tetrafluoroethylene
  • PAVE perfluoroalkyl vinyl ether
  • the ceramic filling material in the embodiment of the present invention may be one of silicon dioxide, titanium dioxide, aluminum oxide, aluminum nitride, magnesium oxide, calcium oxide, zinc oxide, and barium oxide.
  • FIG. 2 is a schematic flowchart of an embodiment of step S100 of the present invention. As shown in FIG. 2, step S100 further includes the following sub-steps:
  • the emulsion of the fluorine-containing material (the fluorine-containing material in the embodiment of the present invention is all tetrafluoroethylene) is added into a container equipped with a mechanical stirrer and fully stirred, wherein the stirring time is in the range of 10- 60min, specifically can be 20min, 40min, 60min, etc., no specific limitation is made here.
  • the amount of the fluorine-containing material in the present invention can be 30-50 parts by weight, specifically 30 parts by weight, 40 parts by weight, 50 parts by weight copies, etc., which are not specifically limited here.
  • the first ceramic filler material is slowly added to the emulsion of the fluorine-containing material, and the mixture is fully stirred until uniform.
  • the first ceramic filling material can be hydrophobic titanium dioxide, and its preset amount can be 1-5 parts, specifically 1 part, 3 parts, 5 parts, etc., which are not specifically limited here.
  • the amount of the first ceramic filling material may be 2-4 parts by weight, specifically 2 parts by weight, 3 parts by weight, 4 parts by weight, etc., which are not specifically limited here.
  • the second ceramic filling material is slowly added into the emulsion after stirring evenly, and the mixture is fully stirred for 2-5 hours, so that the emulsion and the ceramic filling material are evenly mixed to form a mixed emulsion.
  • the second ceramic filling material is silicon dioxide, especially fused amorphous silicon dioxide, and its preset amount can be 40-70 parts, specifically 40 parts, 55 parts, 70 parts, etc., There is no specific limitation here.
  • the second ceramic filling material may be 50-65 parts by weight, specifically 50 parts by weight, 57.5 parts by weight, 65 parts by weight, etc., which are not specifically limited here.
  • demulsification refers to the complete destruction of the emulsion to become two phases that are immiscible, which is essentially to eliminate the stabilization conditions of the emulsion, to aggregate the dispersed droplets, layering process.
  • demulsification methods There are many types of demulsification methods.
  • the demulsification treatment can be performed on the mixed emulsion, and the preset amount of ethanol can be 10-20 part, specifically 10 parts, 15 parts, 20 parts, etc., which are not specifically limited here.
  • the demulsification material is put into an oven and baked within a preset temperature range, so that the mixed emulsion forms a dough-like material.
  • the preset temperature range of the oven is 90-130°C, specifically 90°C, 110°C, 130°C, etc., which are not specifically limited here.
  • the preset temperature range of the oven can be 100-120°C, specifically 100°C, 110°C, 120°C, etc.
  • the above dough-like material is put into a two-roll mill or a calender, and the substrate is formed according to a certain temperature and roll speed, and the distance between the rolls is adjusted to make the thickness of the resulting green substrate uniform.
  • pre-firing treatment is performed on the green substrate to sufficiently exclude stabilizers, surfactants, etc. contained in the tetrafluoroethylene emulsion itself, thereby forming a composite substrate.
  • the temperature range of the pre-burning is 240-320°C, specifically 240°C, 270°C, 300°C, etc., which are not specifically limited here
  • the time range of the pre-burning is 2-12h, specifically 2h, 7h , 12h, etc., which are not specifically limited here.
  • the temperature range of calcination is 260-290°C, specifically 260°C, 275°C, 290°C, etc.
  • the time range of calcination is preferably 3-8h, specifically 3h, 5.5h, 8h, etc. There is no specific limitation.
  • FIG. 3 is a schematic flowchart of an embodiment of step S300 of the present invention. As shown in FIG. 3 , step S300 further includes the following sub-steps:
  • the opposite upper and lower surfaces of the composite substrate are covered with a predetermined thickness of copper foil.
  • the preset thickness of the copper foil may be 10 ⁇ m-40 ⁇ m, and specifically may be 12 ⁇ m, 18 ⁇ m, 35 ⁇ m, and the like.
  • the preset thickness of the copper foil is preferably 18 ⁇ m-35 ⁇ m, and specifically may be 18 ⁇ m or 35 ⁇ m, which is not specifically limited here.
  • the copper foil-covered composite substrate is placed into a specific mold or heat press.
  • the composite substrate covered with copper foil is vacuum sintered at a preset sintering temperature and a preset hot pressing pressure at a certain time and temperature to obtain a composite dielectric copper clad laminate.
  • the preset sintering temperature in the present invention is greater than the melting point of the fluorine-containing material and less than the decomposition temperature of the fluorine-containing material.
  • the preset sintering temperature ranges from 360°C to 400°C, and specifically may be 360°C, 380°C, 400°C, etc., which is not specifically limited here.
  • the sintering temperature range is adjusted between 370°C and 380°C, specifically 370°C, 375°C, 380°C, etc., which are not specifically limited here.
  • the sintering time range is 1-8h, specifically 1h, 4.5h, 8h, etc., and in the preferred embodiment of the present invention, the sintering time can be 2-6h, specifically 2h, 4h, 6h, etc., here No specific limitation is made.
  • the melting point of tetrafluoroethylene is between 320°C and 345°C, so the sintering temperature of tetrafluoroethylene is higher than 345°C, and its decomposition temperature is about 400°C.
  • the sintering temperature should not exceed 400°C.
  • the preset hot-pressing pressure range is 0Mpa-8Mpa, specifically 0Mpa, 4Mpa, 8Mpa, etc., which is not specifically limited here.
  • the preset hot-pressing pressure range may be 2Mpa-4Mpa, specifically 2Mpa, 3Mpa, 4Mpa, and the like.
  • the peel strength of the composite dielectric copper clad laminate is greatly improved, and it can be ensured that the copper clad laminate will not appear in the subsequent processing process. shedding phenomenon.
  • the initial peeling length should be greater than half the length of the spline.
  • the peeling strength of the composite dielectric copper clad laminate prepared by the present invention is greatly improved, and the maximum is more than 2.0 N/mm.
  • PTFE fluorine-containing material
  • the pre-fired composite substrate is covered with copper foil up and down and placed in a hot press, wherein the thickness of the copper foil is 18 ⁇ m.
  • the composite substrate is vacuum sintered by adjusting the sintering temperature to be 370° C., the hot pressing pressure of sintering to 8 Mpa, and the sintering time to be 2-4 h to obtain a composite dielectric copper clad laminate.
  • PTFE fluorine-containing material
  • the pre-fired composite substrate is covered with copper foil up and down and placed in a hot press, wherein the thickness of the copper foil is 18 ⁇ m. Further, the composite substrate is vacuum sintered by adjusting the sintering temperature to be 380° C., the hot pressing pressure of sintering to 8 Mpa, and the sintering time to be 2-4 h to obtain a composite dielectric copper clad laminate.
  • PTFE fluorine-containing material
  • the pre-fired composite substrate is covered with copper foil up and down and placed in a hot press, wherein the thickness of the copper foil is 18 ⁇ m. Further, by adjusting the sintering temperature to be 370° C., the hot pressing pressure of sintering to be 2 Mpa, and the sintering time to be 2-4 h, the composite substrate is hot pressed to obtain a composite dielectric copper clad laminate.
  • PTFE fluorine-containing material
  • the pre-fired composite substrate is covered with copper foil up and down and placed in a hot press, wherein the thickness of the copper foil is 18 ⁇ m. Further, adjusting the sintering temperature to be 370° C., the hot pressing pressure of sintering to be 4 Mpa, and the sintering time to be 2-4 h to hot-press the composite substrate to obtain a composite dielectric copper clad laminate.
  • PTFE fluorine-containing material
  • the pre-fired composite substrate is covered with copper foil up and down and placed in a hot press, wherein the thickness of the copper foil is 35 ⁇ m. Further, adjusting the sintering temperature to be 370° C., the hot pressing pressure of sintering to 8 Mpa, and the sintering time to be 2-4 h to hot-press the composite substrate to obtain a composite dielectric copper clad laminate.
  • Table 1 is a comparative illustration of the peel strength of the composite dielectric copper clad laminates prepared by the above five groups of embodiments of the present invention, and the present invention adopts the method of controlling variables to measure the peel strength of the composite dielectric copper clad laminates obtained by the five groups of experiments.
  • Table 1 For comparison, as shown in Table 1:
  • Example 1 370°C 8Mpa 18 ⁇ m 1.242N/mm
  • Example 2 380°C 8Mpa 18 ⁇ m 1.167N/mm
  • Example 3 370°C 2Mpa 18 ⁇ m 1.31N/mm
  • Example 4 370°C 4Mpa 18 ⁇ m 1.5N/mm
  • Example 5 370°C 8Mpa 35 ⁇ m 2.11N/mm
  • the composite dielectric copper clad laminates prepared by the five embodiments of the present invention all have better peel strengths.
  • the peel strength of the composite dielectric copper clad laminate can be improved to ensure that the copper clad laminate will not fall off during the subsequent processing.
  • the peel strength of the composite dielectric copper clad laminate is greatly improved, and it can be ensured that the copper clad laminate will not fall off in the subsequent processing process.
  • the present invention also provides a printed circuit board, the printed circuit board includes the composite dielectric copper clad laminate prepared by the preparation method in the embodiment of the present invention, and the detailed preparation process and strength peeling test of the composite dielectric copper clad laminate are detailed above. The specific description of the implementation manner will not be repeated here.
  • the embodiment of the present invention provides a preparation method of a composite dielectric copper clad laminate and a printed circuit board.
  • the peel strength of the composite dielectric copper clad laminate is greatly improved, which can ensure that the copper clad laminate can be used in the subsequent The copper foil will not fall off during processing.

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Abstract

一种复合介质覆铜板的制备方法及印刷线路板，制备方法包括：通过含氟材料的乳液及陶瓷填充材料形成基板生坯 (S100)；对基板生坯进行预烧处理以形成复合基板 (S200)；以预设烧结温度及预设热压压力对复合基板进行真空烧结，以形成复合介质覆铜板 (S300)；其中，预设烧结温度范围为360℃-400℃，预设热压压力范围为0MPa-8MPa。上述实施方式能够提高复合介质覆铜板的剥离强度，保证复合介质覆铜板在后续加工过程中不会出现铜箔脱落现象。

Description

复合介质覆铜板的制备方法及印刷线路板 技术领域
本发明涉及复合介质覆铜板制备的技术领域，特别是涉及一种复合介质覆铜板的制备方法及印刷线路板。
 背景技术
随着5G时代的来临，电子产品的发展趋向多功能化，零部件不断向轻、薄、短、小等方向发展，尤其是高密度集成电路技术的广泛应用，对民用电子产品提出高性能化、高可靠性和高安全性的要求；对工业用电子产品提出技术性能良好、低成本、高能耗的要求。
聚四氟乙烯(Polytetrafluoroethylene，简称PTFE)具有优异的微波性能，其介电常数(εr)为2.0-2.2，介电损耗(tanδ)0.0002~0.0003，且具有良好的化学稳定性和热稳定性，适用于高频微波电路。以PTFE树脂为基体复合精细电子陶瓷制备的复合介质，由于具有优异的高频介电性能，低成本金属化，电路加工与安装方便及在振动场合使用不易破碎等一系列优点，深受微波电路设计专家们的青睐。
目前，玻璃纤维布浸渍PTFE乳液得到的复合介质基板是最普通、用量最广的产品，它具有较好的尺寸稳定性和较低的制造成本，但是因为玻纤布自身的介电常数较低，所以得到的玻纤增强PTFE基板其介电常数并不高，约在2.3-2.8之间，要想得到较高介电常数的复合材料需要掺杂高介电常数的陶瓷粉末。同时，由于玻纤布含有较多的金属氧化物，金属盐类杂质，所以其复合基板的介电损耗亦较高。另外，剥离强度是考察覆铜板性能好坏的一个重要指标，它是覆铜板生产中常出现质量问题的指标。剥离强度低就会在后道工艺加工中，如印制版加工或装机焊接时出现铜箔脱落问题，最终影响整个器件的正常加工，降低成品率。
 技术问题
本发明主要是提供一种复合介质覆铜板的制备方法及印刷线路板，能够解决现有技术中通过玻璃纤维布浸渍PTFE乳液得到的复合介质铜覆基板因剥离强度低，导致后续工艺中铜箔脱落等问题。
 技术解决方案
为解决上述技术问题，本发明采用的一个技术方案是：提供一种复合介质覆铜板的制备方法，所述制备方法包括：通过含氟材料的乳液及陶瓷填充材料形成基板生坯；对所述基板生坯进行预烧处理以形成复合基板；以预设烧结温度及预设热压压力对所述复合基板进行真空烧结，以形成所述复合介质覆铜板；其中，所述预设烧结温度范围为360℃-400℃，所述预设热压压力范围为0Mpa-8Mpa。
其中，所述以预设烧结温度及预设热压压力对所述复合基板进行烧结，以形成所述复合介质覆铜板包括：在所述复合基板的相对上表面和下表面上覆盖预设厚度的铜箔；将覆盖铜箔的所述复合基板放入模具或热压机中；以预设烧结温度及预设热压压力对所述覆盖铜箔的复合基板进行烧结，以形成所述复合介质覆铜板。
其中，所述铜箔的预设厚度为10μm-40μm。
其中，所述铜箔的预设厚度为18μm-35μm。
其中，所述预设烧结温度的范围为370℃-380℃。其中，所述通过含氟材料的乳液及陶瓷填充材料形成基板生坯包括：将20-60重量份的含氟材料的乳液加入容器中进行搅拌；分别将1-5重量份的第一陶瓷填充材料及40-70重量份的第二陶瓷填充材料加入所述含氟材料的乳液中，以形成混合乳液；对所述混合乳液进行破乳处理；对破乳后的所述混合乳液进行烘烤以形成面团状物料；对所述面团状物料进行成型处理，以形成所述基板生坯，含氟材料、第一陶瓷填充材料和第二陶瓷填充材料共100重量份。
其中，所述含氟材料为聚四氟乙烯、六氟丙烯、四氟乙烯及全氟烷基乙烯基醚中的一种。
其中，所述陶瓷填充材料为二氧化硅、二氧化钛、三氧化二铝、氮化铝、氧化镁、氧化钙、氧化锌以及氧化钡中的一种。
其中，所述对所述基板生坯进行预烧的温度范围为240℃-320℃，所述预烧的时间范围为2h-12h。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种印刷线路板，所述印刷线路板包括上述任一制备方法制备的复合介质覆铜板。
 有益效果
本发明的有益效果是：区别于现有技术的情况，本发明提供一种复合介质覆铜板的制备方法及印刷线路板，通过调整热工艺，使得复合介质覆铜板的剥离强度得到极大的提高，能够保证覆铜板在后续加工过程中不会出现铜箔脱落现象。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明复合介质覆铜板制备方法一实施方式的流程示意图；
图2是本发明图1中步骤S100一实施方式的流程示意图；
图3是本发明图1中步骤S300一实施方式的流程示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1，图1是本发明复合介质覆铜板制备方法一实施方式的流程示意图，如图1本发明提供的复合介质覆铜板制备方法具体包括如下步骤：
S100，通过含氟材料的乳液及陶瓷填充材料形成基板生坯。
其中，本发明中提供的含氟材料具体可以为聚四氟乙烯（PTFE）、六氟丙烯（HFP）、四氟乙烯（TFE）和全氟烷基乙烯基醚（PAVE）中的一种。在本发明具体实施方式中，以该含氟材料为聚四氟乙烯（PTFE）为例详细介绍本发明复合介质覆铜板的制备方法，且以剩余含氟材料的为原料制造复合介质覆铜板的方法和本实施例的制备方法类似，此处不再赘述。
可选地，本发明实施例中的陶瓷填充材料可以为二氧化硅、二氧化钛、三氧化二铝、氮化铝、氧化镁、氧化钙、氧化锌以及氧化钡中的一种。
请进一步结合图2，图2为本发明步骤S100一实施方式的流程示意图，如图2，步骤S100进一步包括如下子步骤：
S110，将20-60重量份的含氟材料的乳液加入容器中进行搅拌。
将20-60重量份的含氟材料的乳液（本发明实施例中的含氟材料均为四氟乙烯）加入安装有机械搅拌器的容器中进行充分搅拌，其中，该搅拌时间范围为10-60min，具体可以是20min、40min、60min等，此处不做具体限定优选地，本发明中含氟材料的份量可以为30-50重量份，具体可以是30重量份、40重量份、50重量份等，此处不做具体限定。
S120，分别将1-5重量份的第一陶瓷填充材料及40-70重量份的的第二陶瓷填充材料加入含氟材料的乳液中，以形成混合乳液。
可选地，将第一陶瓷填充材料缓慢加入含氟材料的乳液中，充分搅拌至均匀。其中，该第一陶瓷填充材料可以为疏水性的二氧化钛，且其预设份量可以为1-5份，具体可以是1份、3份、5份等，此处不做具体限定。优选地，第一陶瓷填充材料的可以为2-4重量份，具体可以是2重量份、3重量份、4重量份等，此处不做具体限定。
进一步，再将第二陶瓷填充材料缓慢加入搅拌均匀后等乳液中，充分搅拌2-5h，使得乳液和陶瓷填充材料混合均匀，以形成混合乳液。可选地，该第二陶瓷填充材料为二氧化硅，尤其是熔融无定形的二氧化硅，且其预设份量可以为40-70份，具体可以是40份、55份、70份等，此处不做具体限定。优选的，第二陶瓷填充材料可以为50-65重量份，具体可以是50重量份、57.5重量份、65重量份等，此处不做具体限定。
但，含氟材料、第一陶瓷填充材料和第二陶瓷填充材料共100重量份。
S130，对混合乳液进行破乳处理。
进一步，对上述的混合乳液进行破乳处理，其中，破乳是指乳状液完全破坏，成为不相混溶的两相，其实质上就是消除乳状液稳定化条件、使分散的液滴聚集、分层的过程。破乳方法种类较多，本发明实施例中，通过在边搅拌混合乳液边缓慢加入预设重量份的乙醇，能够实现对混合乳液进行破乳处理，且乙醇的预设份量可以为10-20份，具体可以是10份、15份、20份等，此处不做具体限定。
S140，对破乳后的混合乳液进行烘烤以形成团状物料。
将破乳后的物料放入烤箱中，在预设温度范围内进行烘烤，以使得混合乳液形成面团状的物料。其中，烤箱的预设温度范围为90-130℃，具体可以是90℃、110℃、130℃等，此处不做具体限定。在本发明优选实施方式中，烤箱的预设温度范围可以为100-120℃，具体可以是100℃、110℃、120℃等.
S150，对团状物料进行成型处理，以形成基板生坯。
进一步，将上述的面团状物料放入双辊开炼机或压延机上，按照一定的温度和辊速进行基板的成型，同时调整辊间距使得生成的基板生坯的厚度均匀一致。
S200，对基板生坯进行预烧处理以形成复合基板。
进一步，对基板生坯进行预烧处理，以充分排除四氟乙烯乳液自身含有的稳定剂、表面活性剂等，从而形成复合基板。其中，该预烧的温度范围为240-320℃，具体可以是240℃、270℃、300℃等，此处不做具体限定，预烧的时间范围为2-12h，具体可以是2h、7h、12h等，此处不做具体限定。优选的，预烧的温度范围为260-290℃，具体可以是260℃、275℃、290℃等，预烧的时间范围优选为3-8h，具体可以是3h、5.5h、8h等，此处不做具体限定。
S300，以预设烧结温度及预设热压压力对复合基板进行真空烧结，以形成复合介质覆铜板。
进一步结合图3，图3为本发明步骤S300一实施方式的流程示意图，如图3，步骤S300进一步包括如下子步骤：
S310，在复合基板的相对上表面和下表面上覆盖预设厚度的铜箔。
可选地，在复合基板的相对上表面和下表面上覆盖预设厚度的铜箔。本发明实施例中，铜箔的预设厚度可以为10μm-40μm，具体可以是12μm、18μm、35μm等。在本发明一具体实施方式中，铜箔的预设厚度优选为18μm-35μm，具体可以为18μm、35μm，此处不做具体限定。
S310，将覆盖铜箔的复合基板放入模具或热压机中。
将覆盖铜箔的复合基板放入特定的模具或热压机中。
S310，以预设烧结温度及预设热压压力对覆盖铜箔的复合基板进行真空烧结，以形成复合介质覆铜板。
可选地，覆盖铜箔的复合基板以预设烧结温度及预设热压压力在一定的时间和温度下做真空烧结，得到复合介质覆铜板。本发明中的预设烧结温度大于含氟材料的熔点且小于含氟材料的分解温度。具体地，该预设烧结温度范围为360℃～400℃，具体可以是360℃、380℃、400℃等，此处不做具体限定。优选地，该烧结温度范围在370℃~380℃之间做比较调整，具体可以是370℃、375℃、380℃等，此处不做具体限定。其中，烧结时间范围为1-8h，具体可以是1h、4.5h、8h等，且在本发明优选实施方式中该烧结时间可以为2-6h，具体可以是2h、4h、6h等，此处不做具体限定。
具体到本发明具体实施方式中，四氟乙烯的熔点在320℃-345℃之间，因此四氟乙烯的烧结温度要大于345℃，而其分解温度约在400℃，因此四氟乙烯的预设烧结温度不能超过400℃。
进一步，预设热压压力范围为0Mpa-8Mpa，具体可以是0Mpa、4Mpa、8Mpa等，此处不做具体限定。在本发明优选实施方式中，预设热压压力范围可以为2Mpa-4Mpa，具体可以是2Mpa、3Mpa、4Mpa等。
上述实施方式中，通过调整热烧结温度、热压压力，改变铜箔的使用厚度，使得复合介质覆铜板的剥离强度得到极大的提高，能够保证覆铜板在后续加工过程中不会出现铜箔脱落现象。
下面详细介绍采用本发明制备方法制备的复合介质覆铜板剥离性能的测试：
一、复合介质覆铜板样本的准备
1、将制备好的复合介质覆铜板样本裁剪成宽度5mm、长度范围为60-76mm的样条，并对其做修边等处理。
2、用刀片在样条上横切一个刀口，然后在不破坏铜箔情况下，将铜箔拉起来，使铜箔与基材分离，其中，起始剥离长度应大于样条长度的一半。
二、剥离测试
1、测量测试样条的宽度，将初始剥离样条固定住，下方为起始剥离段，用夹具把剥离下来的部分（复合基材+另一面未剥离铜箔）夹住。
2、上方用夹具把起始剥离段把超过样条长度一半的铜箔部分夹住，并保证样条垂直放置，即样条与夹具截面相垂直。
3、设置剥离速度为25mm/min，开始对样条做180°的剥离测试。
4、恢复至初始状态，并继续下一个测试，每个样品的样条测试次数为5-10次。
5、得到剥离测试数据，取测试剥离段的中间50%的数据做平均值，然后将该平均值除以剥离样条的宽度，即可得到该样条的剥离强度。
通过上述剥离测试，本发明制备的复合介质覆铜板的剥离强度得到极大提高，最大高达2.0N/mm以上。同时本发明制备的复合介质覆铜板具有优异的介电性能（介电常数从2.1以上可调，介电损耗低tanδ=0.002,1GHz）、吸水率低（<0.03%）、导热系数较高（>0.5 W/mk）。
进一步结合本发明具体实施方式详细介绍：
复合介质覆铜板的制备
实施例1
称量48重量份的含氟材料（PTFE）乳液加入容器中，搅拌20-60min，称量4重量份的第一陶瓷填充材料TiO2和48重量份的第一陶瓷填充材料SiO2粉末，加入PTFE乳液中，搅拌2-5h至均匀。然后滴加10-20重量份的乙醇使其破乳，对该破乳面团状物料在100-120℃下的烘箱中烘烤，去除部分水份和乙醇。对烘烤到一定程度的物料进行压延成具有较薄厚度的基板生坯薄片，对该基板生坯在260-290℃下预烧3-8h得到复合基板。对预烧后的复合基板上下覆盖铜箔放进热压机中，其中，铜箔的厚度为18μm。调整烧结温度为370℃、烧结的热压压力为8Mpa、烧结时间为2-4h对复合基板进行真空烧结得到复合介质覆铜板。
 
实施例2
称量48重量份的含氟材料（PTFE）乳液加入容器中，搅拌20-60min，称量4重量份的第一陶瓷填充材料TiO2和48重量份的第一陶瓷填充材料SiO2粉末，加入PTFE乳液中，搅拌2-5h至均匀。然后滴加10-20重量份的乙醇使其破乳，对该破乳面团状物料在100-120℃下的烘箱中烘烤，去除部分水份和乙醇。对烘烤到一定程度的物料进行压延成具有较薄厚度的基板生坯薄片，对该基板生坯在260-290℃下预烧3-8h得到复合基板。对预烧后的复合基板上下覆盖铜箔放进热压机中，其中，铜箔的厚度为18μm。进一步，调整烧结温度为380℃、烧结的热压压力为8Mpa、烧结时间为2-4h对复合基板进行真空烧结得到复合介质覆铜板。
 
实施例3
称量48重量份的含氟材料（PTFE）乳液加入容器中，搅拌20-60min，称量4重量份的第一陶瓷填充材料TiO2和48重量份的第一陶瓷填充材料SiO2粉末，加入PTFE乳液中，搅拌2-5h至均匀。然后滴加10-20重量份的乙醇使其破乳，对该破乳面团状物料在100-120℃下的烘箱中烘烤，去除部分水份和乙醇。对烘烤到一定程度的物料进行压延成具有较薄厚度的基板生坯薄片，对该基板生坯在260-290℃下预烧3-8h得到复合基板。对预烧后的复合基板上下覆盖铜箔放进热压机中，其中，铜箔的厚度为18μm。进一步，调整烧结温度为370℃、烧结的热压压力为2Mpa、烧结时间为2-4h对复合基板进行热压得到复合介质覆铜板。
 
实施例4
称量48重量份的含氟材料（PTFE）乳液加入容器中，搅拌20-60min，称量4重量份的第一陶瓷填充材料TiO2和48重量份的第一陶瓷填充材料SiO2粉末，加入PTFE乳液中，搅拌2-5h至均匀。然后滴加10-20重量份的乙醇使其破乳，对该破乳面团状物料在100-120℃下的烘箱中烘烤，去除部分水份和乙醇。对烘烤到一定程度的物料进行压延成具有较薄厚度的基板生坯薄片，对该基板生坯在260-290℃下预烧3-8h得到复合基板。对预烧后的复合基板上下覆盖铜箔放进热压机中，其中，铜箔的厚度为18μm。进一步，调整烧结温度为370℃、烧结的热压压力为4Mpa、烧结时间为2-4h对复合基板进行热压得到复合介质覆铜板。
 
实施例5
称量48重量份的含氟材料（PTFE）乳液加入容器中，搅拌20-60min，称量4重量份的第一陶瓷填充材料TiO2和48重量份的第一陶瓷填充材料SiO2粉末，加入PTFE乳液中，搅拌2-5h至均匀。然后滴加10-20重量份的乙醇使其破乳，对该破乳面团状物料在100-120℃下的烘箱中烘烤，去除部分水份和乙醇。对烘烤到一定程度的物料进行压延成具有较薄厚度的基板生坯薄片，对该基板生坯在260-290℃下预烧3-8h得到复合基板。对预烧后的复合基板上下覆盖铜箔放进热压机中，其中，铜箔的厚度为35μm。进一步，调整烧结温度为370℃、烧结的热压压力为8Mpa、烧结时间为2-4h对复合基板进行热压得到复合介质覆铜板。
 
剥离强度比较
如表1所示，表1为本发明上述五组实施方式制备的复合介质覆铜板的剥离强度的对比示意，且本发明采用控制变量的方式对五组实验得到的复合介质覆铜板的剥离强度进行对比，如表1：
组别 烧结温度 热压压力 铜箔厚度 剥离强度
实施例1 370℃ 8Mpa 18μm 1.242N/mm
实施例2 380℃ 8Mpa 18μm 1.167N/mm
实施例3 370℃ 2Mpa 18μm 1.31N/mm
实施例4 370℃ 4Mpa 18μm 1.5N/mm
实施例5 370℃ 8Mpa 35μm 2.11N/mm
由表1可知，本发明的5个实施例所制得的复合介质覆铜板均具有较优的剥离强度。通过调整烧结温度、热压压力以及铜箔厚度三个参数的范围，从而提高复合介质覆铜板的剥离强度，保证覆铜板在后续加工过程中不会出现铜箔脱落现象。可选地，由表1还可以得到当烧结温度为370℃、热压压力为8Mpa、铜箔厚度为35μm时制备得到的复合介质覆铜板的剥离强度最大为2.11N/mm。
上述实施方式中，通过调整热工艺，使得复合介质覆铜板的剥离强度得到极大的提高，能够保证覆铜板在后续加工过程中不会出现铜箔脱落现象。
可选地，本发明还提供一种印刷线路板，该印刷电路板包括本发明实施例中制备方法制备的复合介质覆铜板，且该复合介质覆铜板的详细制备过程以及强度剥离测试详见上述实施方式的具体描述，此处不再赘述。
区别于现有技术，本发明实施例提供一种复合介质覆铜板的制备方法及印刷线路板，通过调整热工艺，使得复合介质覆铜板的剥离强度得到极大的提高，能够保证覆铜板在后续加工过程中不会出现铜箔脱落现象。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

  1. 一种复合介质覆铜板的制备方法，其特征在于，所述制备方法包括：
    通过含氟材料的乳液及陶瓷填充材料形成基板生坯；
    对所述基板生坯进行预烧处理以形成复合基板；
    以预设烧结温度及预设热压压力对所述复合基板进行真空烧结，以形成所述复合介质覆铜板；
    其中，所述预设烧结温度范围为360℃-400℃，所述预设热压压力范围为0Mpa-8Mpa。
  2. 根据权利要求1所述的制备方法，其特征在于，所述以预设烧结温度及预设热压压力对所述复合基板进行烧结，以形成所述复合介质覆铜板包括：
    在所述复合基板的相对上表面和下表面上覆盖预设厚度的铜箔；
    将覆盖铜箔的所述复合基板放入模具或热压机中；
    以预设烧结温度及预设热压压力对所述覆盖铜箔的复合基板进行真空烧结，以形成所述复合介质覆铜板。
  3. 根据权利要求2所述的制备方法，其特征在于，所述铜箔的预设厚度为10μm-40μm。
  4. 根据权利要求3所述的制备方法，其特征在于，所述铜箔的预设厚度为18μm-35μm。
  5. 根据权利要求1所述的制备方法，其特征在于，所述预设烧结温度的范围为370℃～380℃。
  6. 根据权利要求1所述的制备方法，其特征在于，所述通过含氟材料的乳液及陶瓷填充材料形成基板生坯包括：
    将20-60重量份的含氟材料的乳液加入容器中进行搅拌；
    分别将1-5重量份的第一陶瓷填充材料及40-70重量份的第二陶瓷填充材料加入所述含氟材料的乳液中，以形成混合乳液；
    对所述混合乳液进行破乳处理；
    对破乳后的所述混合乳液进行烘烤以形成面团状物料；
    对所述面团状物料进行成型处理，以形成所述基板生坯；
    其中，含氟材料、第一陶瓷填充材料和第二陶瓷填充材料共100重量份。
  7. 根据权利要求1所述的制备方法，其特征在于，所述含氟材料为聚四氟乙烯、六氟丙烯、四氟乙烯及全氟烷基乙烯基醚中的一种。
  8. 根据权利要求1所述的制备方法，其特征在于，所述陶瓷填充材料为二氧化硅、二氧化钛、三氧化二铝、氮化铝、氧化镁、氧化钙、氧化锌以及氧化钡中的一种。
  9. 根据权利要求1所述的制备方法，其特征在于，所述对所述基板生坯进行预烧的温度范围为240℃-320℃，所述预烧的时间范围为2h-12h。
  10. 一种印刷线路板，其特征在于，所述印刷线路板包括采用权利要求1-9中任一制备方法制备的复合介质覆铜板。
PCT/CN2020/106661 2020-07-09 2020-08-03 复合介质覆铜板的制备方法及印刷线路板 WO2022007069A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115503306A (zh) * 2022-09-22 2022-12-23 泰州市旺灵绝缘材料厂 超薄超细玻纤布陶瓷高频覆铜箔基板及制作工艺

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140162065A1 (en) * 2012-12-12 2014-06-12 Centre for Materials for Electronics Technology (C-MET) Ceramic Filled Fluoropolymer Compositions, Methods and Applications Thereof
CN107172821A (zh) * 2017-06-22 2017-09-15 庐江县典扬电子材料有限公司 一种2.2≤Dk＜6.5覆铜板制作方法
CN107474312A (zh) * 2017-06-12 2017-12-15 电子科技大学 陶瓷填充聚四氟乙烯微波复合介质基板的制备方法
CN107746272A (zh) * 2017-08-16 2018-03-02 电子科技大学 微波介质陶瓷、聚四氟乙烯‑陶瓷复合基板及制备方法
CN110039851A (zh) * 2019-04-19 2019-07-23 中国电子科技集团公司第四十六研究所 一种聚四氟乙烯覆铜板的制备方法
CN110591255A (zh) * 2019-08-13 2019-12-20 瑞声科技（南京）有限公司 基板材料、基板材料制备方法及相关基板
CN110698112A (zh) * 2019-11-01 2020-01-17 中国电子科技集团公司第四十六研究所 一种包含中空陶瓷粉的低介电常数微波介质基板制备方法
CN111154206A (zh) * 2020-02-17 2020-05-15 武汉理工大学 改性ptfe复合介质材料、制备方法及其用途

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104496268B (zh) * 2014-12-16 2016-06-08 中国电子科技集团公司第四十六研究所 一种高频高介微波复合介质基板的制备方法
CN106142754A (zh) * 2016-07-06 2016-11-23 武汉联恒电子材料有限公司 一种树脂组合物及其制造的高频电路基材
CN108570202B (zh) * 2018-03-29 2020-07-14 电子科技大学 聚四氟乙烯复合基板材料的制备方法
CN108656683B (zh) * 2018-04-16 2021-04-02 常州中英科技股份有限公司 一种高介电常数的含氟树脂基覆铜板及其制备方法
CN108901130A (zh) * 2018-05-18 2018-11-27 吴东建 一种高频高速挠性覆铜板及其制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140162065A1 (en) * 2012-12-12 2014-06-12 Centre for Materials for Electronics Technology (C-MET) Ceramic Filled Fluoropolymer Compositions, Methods and Applications Thereof
CN107474312A (zh) * 2017-06-12 2017-12-15 电子科技大学 陶瓷填充聚四氟乙烯微波复合介质基板的制备方法
CN107172821A (zh) * 2017-06-22 2017-09-15 庐江县典扬电子材料有限公司 一种2.2≤Dk＜6.5覆铜板制作方法
CN107746272A (zh) * 2017-08-16 2018-03-02 电子科技大学 微波介质陶瓷、聚四氟乙烯‑陶瓷复合基板及制备方法
CN110039851A (zh) * 2019-04-19 2019-07-23 中国电子科技集团公司第四十六研究所 一种聚四氟乙烯覆铜板的制备方法
CN110591255A (zh) * 2019-08-13 2019-12-20 瑞声科技（南京）有限公司 基板材料、基板材料制备方法及相关基板
CN110698112A (zh) * 2019-11-01 2020-01-17 中国电子科技集团公司第四十六研究所 一种包含中空陶瓷粉的低介电常数微波介质基板制备方法
CN111154206A (zh) * 2020-02-17 2020-05-15 武汉理工大学 改性ptfe复合介质材料、制备方法及其用途

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115503306A (zh) * 2022-09-22 2022-12-23 泰州市旺灵绝缘材料厂 超薄超细玻纤布陶瓷高频覆铜箔基板及制作工艺

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