CN108901130A - 一种高频高速挠性覆铜板及其制备方法 - Google Patents
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Abstract
本发明公开了一种高频高速挠性覆铜板及其制备方法,所述高频高速挠性覆铜板包括聚合物绝缘基材及铜箔;所述聚合物绝缘基材包括改性处理分散聚四氟乙烯,其厚度为0.01~0.075mm;所述铜箔的厚度为2~9μm;所述改性处理分散聚四氟乙烯包括陶瓷材料和分散聚四氟乙烯,所述陶瓷材料和分散聚四氟乙烯的质量比为(10~30):(90~70)。所述高频高速挠性覆铜板的制备方法步骤包括陶瓷粉料的表面处理、分散聚四氟乙烯粉料的改性处理和制备高频高速挠性覆铜板。本发明工艺简单,节能环保,介质损耗低,能够大幅降低铜箔的厚度及粗糙度。
Description
技术领域
本发明属于电子电路领域,具体涉及一种高频高速挠性覆铜板及其制备方法。
背景技术
现有技术中有如下一种高频高速挠性覆铜板,其包括聚合物绝缘基膜、聚合物胶黏层和金属箔,制备方法是首先将聚合物绝缘基膜进行辐射处理,然后将可固化的树脂胶黏剂覆盖在聚合物绝缘基膜上,然后与金属箔压合、高温固化得到高频高速挠性覆铜板。这种挠性覆铜板的虽然介电常数低,可广泛运用与智能手机和航天设备等领域,但这种由聚合物绝缘基膜、胶黏剂和铜箔经过热压制备的挠性覆铜板,其损耗偏大,耐热性差,以及介电常数的稳定性差。
发明内容
为了解决上述现有技术的不足,本发明的目的是提供一种高频高速挠性覆铜板及其制备方法。
为实现上述目的,本发明的技术方案如下:
一种高频高速挠性覆铜板,所述高频高速挠性覆铜板包括聚合物绝缘基材及铜箔;所述聚合物绝缘基材包括改性处理分散聚四氟乙烯,其厚度为0.01~0.075mm;所述铜箔的厚度为2~9μm;
所述改性处理分散聚四氟乙烯包括陶瓷材料和分散聚四氟乙烯,所述陶瓷材料和分散聚四氟乙烯的质量比为(10~30):(90~70)。
优选的,所述陶瓷材料用硅烷偶联剂进行了表面处理,所述硅烷偶联剂与陶瓷材料的质量比为5:95。
优选的,所述聚合物绝缘基材厚度为0.02~0.03mm;所述铜箔采用溅射电镀法镀在所述聚合物绝缘基材双面之上,其厚度为5μm,粗糙度Ra小于0.1μm。
所述溅射电镀法即先后使用离子溅射和电镀的方法将铜镀于基材之上的方法,常规的用于挠性覆铜板的溅射电镀工艺均可适用于本发明。
优选的,所述陶瓷材料由60-80%w/w的二氧化硅、1-20%w/w的氧化铝和1-20%w/w的二氧化钛组成。更优选的,所述陶瓷材料由80%w/w的二氧化硅、15~18%w/w的氧化铝和2~5%w/w的二氧化钛组成。
优选的,所述陶瓷材料介电常数温度系数为﹢50~400ppm/℃,更优选为﹢50~80ppm/℃。
所述高频高速挠性覆铜板的制备方法,包括以下步骤:
采用硅烷偶联剂对陶瓷粉料进行表面处理,得到表面处理陶瓷粉料;再把表面处理陶瓷粉料与分散聚四氟乙烯粉料均匀混合,得到改性处理聚四氟乙烯粉料;
将所述改性处理聚四氟乙烯粉料模压后烧结,得到聚合物绝缘基材;再采用溅射电镀法在所述聚合物绝缘基材的双面敷铜箔,得到高频高速挠性覆铜板。
优选的,所述表面处理陶瓷粉料粒径D90为2μm,分散聚四氟乙烯粉料粒径D90为0.2μm。
优选的,所述模压的压力是50-100kg/cm2,所述烧结具体是指在330-380℃下烧结2h。
本发明的有益效果如下:
(1)本发明直接在绝缘基材两面上离子溅射电镀金属铜,不用上游企业生产铜箔,工艺节能环保且流程缩短,效率提高,成本降低。
(2)本发明无需聚酰亚胺膜、聚酯膜等绝缘基材,也无需高温热压过程,工艺简单有效。
(3)本发明提高了产品性能,通过溅射电镀在绝缘基材双面敷铜箔,使其厚度及粗糙度大幅降低,粗糙度的降低有效减少了由于趋肤效应所造成的高频信号的损耗。
(4)本发明采用的二氧化硅、氧化铝、二氧化钛陶瓷改性的聚四氟乙烯解决了挠性覆铜板的损耗大、耐热性差的问题,制得的挠性覆铜板介质常数Dk为3.5时介质损耗Df仅为0.001左右,且288℃漂锡时间达到70min。
具体实施方式
下面结合具体实施例对本发明作进一步的说明。
以下实施例中,所用仪器:球磨砂磨机、成型压机、烧结炉、离子溅射和电镀机均为本领域公知的设备。所用硅烷偶联剂为市售硅烷偶联剂6032。
实施例1
(1)制备表面处理陶瓷粉料:
①将二氧化硅80质量份,氧化铝15质量份和二氧化钛5质量份混合好得到陶瓷粉料,再将其加入蒸馏水中搅拌均匀;
②将硅烷偶联剂加入到陶瓷粉料蒸馏水混合液中搅拌均匀;其中硅烷偶联剂和陶瓷粉料质量比为5:95;
③将以上混合液烘干和粉碎过筛得到表面处理陶瓷粉料;
所得表面处理陶瓷粉料粒径D90为2微米,介电常数温度系数为﹢50ppm/℃。
(2)制备改性处理聚四氟乙烯粉料:
采用球磨砂磨机将30质量份表面处理陶瓷粉料及70质量份分散聚四氟乙烯粉料混合均匀,得到改性处理聚四氟乙烯粉料;所述分散聚四氟乙烯粉料粒径D90为0.2微米。
(3)制备高频高速挠性覆铜板:
将所述改性处理聚四氟乙烯粉料冷压成型制成0.02mm厚的薄膜,所用压力为100kg/cm2;将板置于烧结炉中在380℃下烧结2h,烧结完成后即得到高频高速挠性覆铜板的绝缘基材;然后采用溅射电镀法在所述聚合物绝缘基材的双面敷铜箔,即得到高频高速挠性覆铜板。所述铜箔厚度为5μm。
本实施例制得的高频高速挠性覆铜板产品的性能如下:
表1实施例1制得的高频高速挠性覆铜板的各项性能
实施例2
(1)制备表面处理陶瓷粉料:
①将二氧化硅80质量份,氧化铝18质量份和二氧化钛2质量份混合好得到陶瓷粉料,再将其加入蒸馏水中搅拌均匀;
②将硅烷偶联剂加入到陶瓷粉料蒸馏水混合液中搅拌均匀;其中硅烷偶联剂和陶瓷粉料质量比为5:95;
③将以上混合液烘干和粉碎过筛得到表面处理陶瓷粉料;
所得表面处理陶瓷粉料粒径D90为2微米,介电常数温度系数为﹢80ppm/℃。
(2)制备改性处理聚四氟乙烯粉料:
采用球磨砂磨机将10质量份表面处理陶瓷粉料及90质量份分散聚四氟乙烯粉料混合均匀,得到改性处理聚四氟乙烯粉料;所述分散聚四氟乙烯粉料粒径D90为2微米。
(3)制备高频高速挠性覆铜板:
将所述改性处理聚四氟乙烯粉料冷压成型制成0.03mm厚的薄膜,所用压力为100kg/cm2;将板置于烧结炉中在380℃下烧结2h,烧结完成后即得到高频高速挠性覆铜板的绝缘基材;然后采用溅射电镀法在所述聚合物绝缘基材的双面敷铜箔,即得到高频高速挠性覆铜板。所述铜箔厚度为5μm。
制得的高频高速挠性覆铜板产品的性能如下:
表2实施例2制得的高频高速挠性覆铜板的各项性能
本发明的实施方式不限于此,按照本发明的上述内容,利用本领域的普通技术知识和惯用手段,在不脱离本发明上述基本技术思想前提下,本发明还可以做出其它多种形式的修改、替换或变更,均落在本发明权利保护范围之内。
Claims (10)
1.一种高频高速挠性覆铜板,其特征在于,所述高频高速挠性覆铜板包括聚合物绝缘基材及铜箔;所述聚合物绝缘基材包括改性处理分散聚四氟乙烯,其厚度为0.01~0.075mm;所述铜箔的厚度为2~9μm;
所述改性处理分散聚四氟乙烯包括陶瓷材料和分散聚四氟乙烯,所述陶瓷材料和分散聚四氟乙烯的质量比为(10~30):(90~70)。
2.根据权利要求1所述的一种高频高速挠性覆铜板,其特征在于,所述陶瓷材料用硅烷偶联剂进行了表面处理,所述硅烷偶联剂与陶瓷材料的质量比为5:95。
3.根据权利要求1所述的一种高频高速挠性覆铜板,其特征在于,所述聚合物绝缘基材厚度为0.02~0.03mm;所述铜箔采用溅射电镀法镀在所述聚合物绝缘基材双面之上,其厚度为5μm,粗糙度Ra小于0.1μm。
4.根据权利要求1所述的一种高频高速挠性覆铜板,其特征在于,所述陶瓷材料由60~80%w/w的二氧化硅、1~20%w/w的氧化铝和1~20%w/w的二氧化钛组成。
5.根据权利要求4所述的一种高频高速挠性覆铜板,其特征在于,所述陶瓷材料由80%w/w的二氧化硅、15~18%w/w的氧化铝和2~5%w/w的二氧化钛组成。
6.根据权利要求1所述的一种高频高速挠性覆铜板,其特征在于,所述陶瓷材料介电常数温度系数为﹢50~400ppm/℃。
7.根据权利要求1所述的一种高频高速挠性覆铜板,其特征在于,所述陶瓷材料介电常数温度系数为﹢50~80ppm/℃。
8.权利要求1~7任一项所述高频高速挠性覆铜板的制备方法,其特征在于,包括以下步骤:
采用硅烷偶联剂对陶瓷粉料进行表面处理,得到表面处理陶瓷粉料;再把表面处理陶瓷粉料与分散聚四氟乙烯粉料均匀混合,得到改性处理聚四氟乙烯粉料;
将所述改性处理聚四氟乙烯粉料模压后烧结,得到聚合物绝缘基材;再采用溅射电镀法在所述聚合物绝缘基材的双面敷铜箔,得到高频高速挠性覆铜板。
9.根据权利要求8所述的一种高频高速挠性覆铜板的制备方法,其特征在于,所述表面处理陶瓷粉料粒径D90为2μm,分散聚四氟乙烯粉料粒径D90为0.2μm。
10.根据权利要求8所述的一种高频高速挠性覆铜板的制备方法,其特征在于,所述模压的压力是50-100kg/cm2,所述烧结具体是指在330-380℃下烧结2h。
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