WO2022000590A1 - 容性、感性交叉耦合结构及介质波导滤波器 - Google Patents

容性、感性交叉耦合结构及介质波导滤波器 Download PDF

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Publication number
WO2022000590A1
WO2022000590A1 PCT/CN2020/102980 CN2020102980W WO2022000590A1 WO 2022000590 A1 WO2022000590 A1 WO 2022000590A1 CN 2020102980 W CN2020102980 W CN 2020102980W WO 2022000590 A1 WO2022000590 A1 WO 2022000590A1
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Prior art keywords
coupling
blind
dielectric body
coupling structure
cross
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PCT/CN2020/102980
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English (en)
French (fr)
Inventor
李陆龙
韩莉
姜华
岳月华
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瑞声声学科技(深圳)有限公司
瑞声精密制造科技(常州)有限公司
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Publication of WO2022000590A1 publication Critical patent/WO2022000590A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters

Definitions

  • the invention relates to a waveguide type coupling device, in particular to a capacitive and inductive cross-coupling structure and a dielectric waveguide filter.
  • the dielectric waveguide filter has no metal cavity, and the dielectric constant of its own material is generally 20 ⁇ 50, so the volume is small.
  • the ceramic dielectric waveguide filter has the advantages of high Q value, good frequency selection characteristics, good operating frequency stability, and low insertion loss.
  • the dielectric waveguide filter has the above advantages, most of the current dielectric waveguide filters are formed by dry pressing, so the actual structure of the dielectric waveguide filter is relatively high, and some structures that can be easily realized in the metal cavity, It is difficult to achieve in dielectric waveguide filters.
  • the purpose of the present invention is to provide a capacitive cross-coupling structure, an inductive cross-coupling structure and a dielectric waveguide filter, so that the dielectric waveguide filter has good frequency selection characteristics and out-of-band suppression.
  • a capacitive cross-coupling structure the capacitive cross-coupling structure includes a dielectric body, the dielectric body is provided with four resonant parts distributed in a matrix and provided with resonant blind holes, and further comprises a dielectric body disposed on the dielectric body.
  • the coupling blind slot connects the two resonance parts located on the diagonal of the matrix.
  • the resonant blind holes and the coupling blind holes are circular or polygonal.
  • the adjustment structure is a coupling through slot, a through hole or a coupling blind hole.
  • the present invention also provides an inductive cross-coupling structure, the inductive cross-coupling structure includes a dielectric body, the dielectric body is provided with four resonant parts distributed in a matrix and provided with resonant blind holes, and further comprises a dielectric body disposed on the dielectric body.
  • the dielectric body includes a first surface on which the resonance part and the adjustment structure are arranged, and a second surface opposite to the first surface, there are two blind coupling slots, and two of the The blind coupling grooves are respectively disposed on the first surface and the second surface.
  • the present invention also provides a dielectric waveguide filter, which includes an inductive cross-coupling structure and a capacitive cross-coupling structure connected to the inductive cross-coupling structure.
  • the beneficial effect of the present invention is that the resonance frequency of the resonance part can be adjusted by arranging the resonance blind hole and the adjustment structure in the dielectric body.
  • the depth of the coupling blind slot is greater than half of the thickness of the dielectric body, so that the structure is a capacitive cross-coupling structure.
  • the resonant blind hole is placed in the matrix method, and the connection direction of the coupling blind slot and the non-adjacent resonator part is consistent, and a pair of zero points can be generated, thereby providing good frequency selection characteristics and out-of-band suppression performance, ensuring the product's Production quality.
  • FIG. 1 is a top view of a capacitive cross-coupling structure in a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view of the capacitive cross-coupling structure in FIG. 1 along the A-A direction;
  • FIG. 3 is a top view of an inductive cross-coupling structure in a second embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of the inductive cross-coupling structure in FIG. 3 along the B-B direction;
  • FIG. 5 is a top view of a dielectric waveguide filter in a third embodiment of the present invention.
  • FIG. 6 is a front view of a dielectric waveguide filter in a third embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of the dielectric waveguide filter in FIG. 5 along the C-C direction;
  • FIG. 8 is a cross-sectional view of the dielectric waveguide filter in FIG. 5 along the D-D direction;
  • FIG. 9 is a cross-sectional view of the dielectric waveguide filter in FIG. 6 along the E-E direction;
  • FIG. 10 is a cross-sectional view of the dielectric waveguide filter in FIG. 7 along the F-F direction;
  • FIG. 11 is a perspective view of a dielectric waveguide filter in a third embodiment of the present invention.
  • FIG. 13 is a schematic diagram of a topology structure of a dielectric waveguide filter in a third embodiment of the present invention.
  • FIG. 1 is a top view of a capacitive cross-coupling structure in a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the capacitive cross-coupling structure in FIG. 1 along the A-A direction.
  • the present invention provides a capacitive cross-coupling structure.
  • the capacitive cross-coupling structure includes a dielectric body.
  • the dielectric body is provided with four resonant parts distributed in a matrix and provided with resonant blind holes 11.
  • the capacitive cross-coupling structure also includes a resonator portion disposed on the dielectric body and located at the center of the dielectric body. Any adjustment structure between adjacent resonators, a coupling blind slot 15 located in the middle of the matrix and the length direction of which is consistent with the direction of the connection between two non-adjacent resonator parts, the depth of the coupling blind slot 15 is greater than the thickness of the dielectric body.
  • Half
  • the beneficial effect of the present invention is that: by setting the resonance blind hole 11 and the adjustment structure in the dielectric body, the resonance frequency of the resonance part can be adjusted, and the resonance frequency can be adjusted through the resonance blind hole 11 and the parameters such as the depth and diameter of the adjustment structure. .
  • the resonant blind holes 11 and the adjustment structure are arranged in a matrix manner, which helps to set the coupling blind slots 15 between the resonant parts on the diagonal of the rectangular array, so as to ensure the coupling blind slots and the non-adjacent resonator parts on the matrix.
  • the connection direction is the same, a pair of zero points can be generated, so as to provide good frequency selection characteristics and out-of-band suppression performance, and ensure the production quality of products.
  • the blind resonance hole 11 is generally disposed at the center of the corresponding resonance part.
  • the depths of all resonant blind holes 11 may be equal or unequal, and the diameters of all resonant blind holes 11 may be equal or unequal.
  • the adjustment structure in the above is the coupling through slot 14 , the through hole 13 or the coupling blind hole 16 .
  • adjustment structures with different depths and shapes can be set to adjust the frequency according to the actual needs.
  • the coupling blind slots 15 in the above are directed to different resonance parts respectively.
  • the length, width and depth of the coupling blind slot 15 may refer to its performance parameters.
  • Using the coupling blind slot 15, in a rectangular array helps to generate capacitive coupling between the resonance parts on the diagonal of the rectangle, so that the dielectric waveguide filter 100 generates a pair of zeros, thereby improving out-of-band rejection. And through this structure, better frequency selection characteristics are obtained.
  • the blind coupling slot 15 connects the two resonance parts located on the diagonal of the matrix. Capacitive coupling can be achieved regardless of whether the coupling blind slot 15 is connected to the resonator.
  • the coupling blind slot 15 is strip-shaped, and its coupling characteristics are better than arc-shaped.
  • the resonance blind via 11 and the coupling blind via 16 are circular or polygonal.
  • the present invention also provides an inductive cross-coupling structure, which includes a dielectric body.
  • the dielectric body is provided with four resonant parts distributed in a matrix and provided with resonant blind holes 11, and also includes an adjustment structure arranged on the dielectric body and located between any adjacent resonant parts.
  • One is located in the middle of the matrix and has a length of The blind coupling slot 12 whose direction is the same as the direction of the connection line between the two non-adjacent resonating parts, the depth of the blind coupling slot 12 is less than or equal to half of the thickness of the dielectric body.
  • a pair of zeros can be generated between the resonance part and the coupling blind slot of the inductive cross-coupling structure, so as to provide good frequency selection characteristics and out-of-band suppression performance, and ensure the production quality of the product.
  • the coupling bandwidth value when the coupling bandwidth value is greater than 0, the coupling is inductive, and when the coupling bandwidth value is less than 0, the coupling is capacitive.
  • the inductive cross-coupling structure and the capacitive cross-coupling structure are similar on the whole. In production, the inductive cross-coupling structure and the capacitive cross-coupling structure are respectively fabricated by changing the depth of the coupling blind slot 12 .
  • the cross-coupling structure is capacitive; if the depth of the blind coupling groove 12 is less than or close to half the thickness of the dielectric body, the cross-coupling structure is inductive Cross-coupling structure.
  • the dielectric body includes a first surface 10 provided with a resonance part and an adjustment structure.
  • the blind coupling groove 12 is disposed on the first surface 10 .
  • the dielectric body includes a second surface 20 disposed opposite to the first surface 10, there are two blind coupling grooves 12, and the two blind coupling grooves 12 are respectively disposed on the first surface 10 and the second surface 10. second surface 20 .
  • FIG. 5 is a top view of the dielectric waveguide filter in the third embodiment of the present invention
  • FIG. 6 is a front view of the dielectric waveguide filter in the third embodiment of the present invention
  • FIG. 7 Figure 5 is a cross-sectional view of the dielectric waveguide filter in the direction CC
  • Figure 8 is a cross-sectional view of the dielectric waveguide filter in Figure 5 in the direction DD
  • Figure 9 is a cross-sectional view of the dielectric waveguide filter in Figure 6 along the direction EE
  • 10 is a cross-sectional view of the dielectric waveguide filter in FIG. 7 along the FF direction
  • FIG. 11 is a perspective view of the dielectric waveguide filter in the third embodiment of the present invention.
  • the invention also provides a dielectric waveguide filter, which includes an inductive cross-coupling structure and a capacitive cross-coupling structure connected to the inductive cross-coupling structure. It forms desired operating characteristics by adjusting the resonant frequencies of the plurality of tuning structures and the coupling strength between the tuning structures.
  • capacitive cross-coupling is used to suppress the left passband
  • inductive cross-coupling is used to suppress the right passband, so as to achieve the filtering effect.
  • the specific effect of the dielectric waveguide filter 100 is shown in FIG. 12 ; the topology structure of the dielectric waveguide filter 100 is shown in FIG. 13 .
  • the dielectric waveguide filter 100 provided by the present invention, good frequency selection characteristics and out-of-band suppression performance can be obtained, and the structure is relatively simple and convenient for production.

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Abstract

本发明提供了一种容性、感性交叉耦合结构及介质波导滤波器，其中的容性交叉耦合结构包括介质本体，介质本体设有四个呈矩阵分布且设有谐振盲孔的谐振部，还包括四个位于矩阵的边上的相邻谐振部之间的调节结构，一位于矩阵中间且长度方向与两个非相邻谐振部连线方向一致的耦合盲槽，耦合盲槽的深度大于介质本体厚度的二分之一。通过在介质本体设置谐振盲孔及调节结构，调节谐振部的谐振频率。耦合盲槽的深度大于介质本体厚度的二分之一，使该结构为容性交叉耦合结构。而应用矩阵的方式来放置谐振盲孔，并保证耦合盲槽与非相邻的谐振部连线方向一致，可以产生一对零点，以此提供良好的选频特性和带外抑制性能，保证产品的生产质量。

Description

容性、感性交叉耦合结构及介质波导滤波器 技术领域
本发明涉及一种波导型耦合器件，尤其涉及容性、感性交叉耦合结构及介质波导滤波器。
 背景技术
5G时代，受限于大规模天线技术对大规模天线集成化的要求，滤波器需要更加小型化、集成化和轻量化。介质波导滤波器由于电磁波谐振发生在介质材料内部，没有金属腔体，且其本身材料介电常数一般在20~50，因此体积较小。同时陶瓷介质波导滤波器具有Q值高、选频特性好、工作频率稳定性好、插入损耗小等优点。
尽管介质波导滤波器具有上述的优点，但是目前大部分介质波导滤波器都是一体干压成型，因此对于介质波导滤波器的实际结构要求较高，一些在金属腔体中可以轻易实现的结构，在介质波导滤波器中却难以实现。
基于此，有必要对上述的介质波导滤波器进行改进。
 技术问题
本发明的目的在于提供一种容性交叉耦合结构、感性交叉耦合结构及介质波导滤波器，使该介质波导滤波器具有良好的选频特性和带外抑制性。
 技术解决方案
本发明的技术方案如下：一种容性交叉耦合结构，容性交叉耦合结构包括介质本体，介质本体设有四个呈矩阵分布且设有谐振盲孔的谐振部，还包括设置在所述介质本体上且位于任意相邻谐振部之间的调节结构，一位于所述矩阵中间且长度方向与两个非相邻所述谐振部连线方向一致的耦合盲槽，耦合盲槽的深度大于介质本体厚度的二分之一。
可选地，所述耦合盲槽将位于所述矩阵的对角线上的两个所述谐振部连通。
进一步地，所述谐振盲孔和耦合盲孔为圆形或多边形。
进一步地，所述调节结构为耦合通槽、通孔或耦合盲孔。
本发明还提供了一种感性交叉耦合结构，所述感性交叉耦合结构包括介质本体，所述介质本体设有四个呈矩阵分布且设有谐振盲孔的谐振部，还包括设置在所述介质本体上且位于任意相邻谐振部之间的调节结构，一位于所述矩阵的中间、且长度方向与两个非相邻所述谐振部连线方向一致的耦合盲槽，所述耦合盲槽的深度小于或等于所述介质本体厚度的二分之一。
进一步地，所述介质本体包括设置了所述谐振部及所述调节结构的第一表面及与所述第一表面相对设置的第二表面，所述耦合盲槽有两个，两个所述耦合盲槽分别设置于所述第一表面及所述第二表面。
本发明还提供了一种介质波导滤波器，包括感性交叉耦合结构以及与所述感性交叉耦合结构连接的容性交叉耦合结构。
 有益效果
本发明的有益效果在于：通过在介质本体设置谐振盲孔及调节结构，调节谐振部的谐振频率。耦合盲槽的深度大于介质本体厚度的二分之一，使得该结构为容性交叉耦合结构。而应用矩阵的方式来放置谐振盲孔，并保证耦合盲槽与非相邻的谐振部连线方向一致，可以产生一对零点，从而提供良好的选频特性和带外抑制性能，保证产品的生产质量。
 附图说明
图1为本发明第一实施例中容性交叉耦合结构的俯视图；
图2为图1中的容性交叉耦合结构沿A-A方向的剖视图；
图3为本发明第二实施例中感性交叉耦合结构的俯视图；
图4为图3中的感性交叉耦合结构沿B-B方向的剖视图；
图5为本发明第三实施例中的介质波导滤波器的俯视图；
图6为本发明第三实施例中的介质波导滤波器的正视图；
图7为图5中的介质波导滤波器沿C-C方向的剖视图；
图8为图5中的介质波导滤波器沿D-D方向的剖视图；
图9为图6中的介质波导滤波器沿E-E方向的剖视图；
图10为图7中的介质波导滤波器沿F-F方向的剖视图；
图11为本发明第三实施例中的介质波导滤波器的立体图；
图12为本发明第三实施例中的介质波导滤波器的滤波效果图；
图13为本发明第三实施例中的介质波导滤波器的拓扑结构示意图。
 本发明的实施方式
下面结合附图和实施方式对本发明作进一步说明。
请参阅图1及图2，图1为本发明第一实施例中容性交叉耦合结构的俯视图。图2为图1中的容性交叉耦合结构沿A-A方向的剖视图。
本发明提供了一种容性交叉耦合结构，容性交叉耦合结构包括介质本体，介质本体设有四个呈矩阵分布且设有谐振盲孔11的谐振部，还包括设置在介质本体上且位于任意的相邻谐振部之间的调节结构，一位于矩阵的中间、且长度方向与两个非相邻谐振部连线方向一致的耦合盲槽15，耦合盲槽15的深度大于介质本体厚度的二分之一。
本发明的有益效果在于：通过在介质本体设置谐振盲孔11及调节结构，可以实现所在谐振部的谐振频率的调节，通过振谐盲孔11及调节结构的深度、直径等参数，调节谐振频率。而应用矩阵的方式来放置谐振盲孔11及调节结构，有助于在矩形阵列的对角线上的谐振部之间设置耦合盲槽15，保证耦合盲槽与矩阵上非相邻的谐振部连线方向一致，可以产生一对零点，从而提供良好的选频特性和带外抑制性能，保证产品的生产质量。
本实施例中，谐振盲孔11一般设置在对应的谐振部的中心位置。所有谐振盲孔11的深度可以是相等的，也可以是不相等的，所有谐振盲孔11的直径可以是相等的，也可以是不相等的。
上述中的调节结构为耦合通槽14、通孔13或耦合盲孔16。为满足实际使用需求，可通过设置不同深度及形状的调节结构，以根据实际需要的频率进行相应的调节。
上述中的耦合盲槽15分别指向不同的谐振部。
具体的，耦合盲槽15的长度、宽度和深度均可以参照其性能参数。应用耦合盲槽15，在矩形阵列中，有助于在矩形对角线上的谐振部之间产生容性耦合，使介质波导滤波器100产生一对零点，从而提高带外抑制。并通过该结构，获得较优的选频特性。
可选地，耦合盲槽15将位于矩阵的对角线上的两个谐振部连通。不论耦合盲槽15是否连通谐振部，均可实现电容耦合。本实施例中，耦合盲槽15为条状，其耦合特性相对圆弧状更优。
进一步地，谐振盲孔11和耦合盲孔16为圆形或多边形。将谐振盲孔11设置为不同的形状，可以改变对带外谐波的抑制，并以此对抑制效果进行调节。
本发明还提供了一种感性交叉耦合结构，其包括介质本体。介质本体设有四个呈矩阵分布且设有谐振盲孔11的谐振部，还包括设置在所述介质本体上且位于任意相邻谐振部之间的调节结构，一位于矩阵的中间、且长度方向与两个非相邻所述谐振部连线方向一致的耦合盲槽12，耦合盲槽12的深度小于或等于介质本体厚度的二分之一。
本实施例中，感性交叉耦合结构的谐振部与耦合盲槽可以产生一对零点，以此提供良好的选频特性和带外抑制性能，保证产品的生产质量。在具体的滤波结构中，当耦合带宽值大于0时，耦合表现为感性，当耦合带宽值小于0时，耦合表现为容性。本实施例中，感性交叉耦合结构与容性交叉耦合结构的整体上是相近的，在生产中，通过改变耦合盲槽12深度，分别制作感性交叉耦合结构与容性交叉耦合结构。如果盲槽深度大于本体厚度的二分之一，则该交叉耦合结构为容性交叉耦合结构；如果耦合盲槽12深度小于或接近介质本体厚度的二分之一，则该交叉耦合结构为感性交叉耦合结构。
在感性交叉耦合结构中，介质本体包括设有谐振部及调节结构的第一表面10。本实施中，将耦合盲槽12设置在第一表面10。
进一步地，在感性交叉耦合结构中，介质本体包括设有与第一表面10相对设置的第二表面20，耦合盲槽12有两个，两个耦合盲槽12分别设置于第一表面10及第二表面20。通过设置两个耦合盲槽12，更细致地确定耦合盲槽的参数，以此调节谐振频率。
进一步地，请参阅图5至图11；图5为本发明第三实施例中的介质波导滤波器的俯视图；图6为本发明第三实施例中的介质波导滤波器的正视图；图7为图5中的介质波导滤波器沿C-C方向的剖视图；图8为图5中的介质波导滤波器沿D-D方向的剖视图；图9为图6中的介质波导滤波器沿E-E方向的剖视图；图10为图7中的介质波导滤波器沿F-F方向的剖视图；图11为本发明第三实施例中的介质波导滤波器的立体图。
本发明还提供了一种介质波导滤波器，包括感性交叉耦合结构以及与感性交叉耦合结构连接的容性交叉耦合结构。其通过调节多个调节结构的谐振频率和调节结构之间的耦合强度形成期望的工作特性。
本实施例中，将上述的感性耦合结构及容性耦合结构连接之后，通过容性交叉耦合用来抑制左边的通带，感性交叉耦合的用来抑制右边通带，以此实现滤波的效果。本实施例中，介质波导滤波器100的具体效果如图12所示；介质波导滤波器100的拓扑结构如图13所示。
综上所述，运用本发明提供的介质波导滤波器100，可以获得良好的选频特性和带外抑制性能，而且该结构较为简单，便于生产。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (7)

  1. 一种容性交叉耦合结构，所述容性交叉耦合结构包括介质本体，所述介质本体设有四个呈矩阵分布且设有谐振盲孔的谐振部，其特征在于，还包括设置在所述介质本体上且位于任意的相邻所述谐振部之间的调节结构，一位于所述矩阵的中间且长度方向与两个非相邻所述谐振部连线方向一致的耦合盲槽，所述耦合盲槽的深度大于所述介质本体厚度的二分之一。
  2. 根据权利要求1所述的容性交叉耦合结构，其特征在于，所述耦合盲槽将位于所述矩阵的对角线上的两个所述谐振部连通。
  3. 根据权利要求1所述的容性交叉耦合结构，其特征在于，所述谐振盲孔和耦合盲孔为圆形或多边形。
  4. 根据权利要求1所述的容性交叉耦合结构，其特征在于，所述调节结构为耦合通槽、通孔或耦合盲孔。
  5. 一种感性交叉耦合结构，其特征在于，所述感性交叉耦合结构包括介质本体，所述介质本体设有四个呈矩阵分布且设有谐振盲孔的谐振部，其特征在于，还包括设置在所述介质本体上且位于任意相邻所述谐振部之间的调节结构，一位于所述矩阵的中间且长度方向与两个非相邻所述谐振部连线方向一致的耦合盲槽，所述耦合盲槽的深度小于或等于所述介质本体厚度的二分之一。
  6. 根据权利要求5所述的感性交叉耦合结构，其特征在于，所述介质本体包括设置了所述谐振部及所述调节结构的第一表面及与所述第一表面相对设置的第二表面，所述耦合盲槽有两个，两个所述耦合盲槽分别设置于所述第一表面及所述第二表面。
  7. 一种介质波导滤波器，其特征在于，包括感性交叉耦合结构以及与所述感性交叉耦合结构连接的容性交叉耦合结构。
PCT/CN2020/102980 2020-06-30 2020-07-20 容性、感性交叉耦合结构及介质波导滤波器 WO2022000590A1 (zh)

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