WO2021261567A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2021261567A1
WO2021261567A1 PCT/JP2021/024013 JP2021024013W WO2021261567A1 WO 2021261567 A1 WO2021261567 A1 WO 2021261567A1 JP 2021024013 W JP2021024013 W JP 2021024013W WO 2021261567 A1 WO2021261567 A1 WO 2021261567A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
light
region
sealing material
Prior art date
Application number
PCT/JP2021/024013
Other languages
English (en)
Japanese (ja)
Inventor
紘幹 瀬川
高史 飯野
敏伸 勝俣
貞人 今井
Original Assignee
シチズン電子株式会社
シチズン時計株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シチズン電子株式会社, シチズン時計株式会社 filed Critical シチズン電子株式会社
Priority to JP2022532545A priority Critical patent/JP7171972B2/ja
Publication of WO2021261567A1 publication Critical patent/WO2021261567A1/fr
Priority to JP2022176356A priority patent/JP7350144B2/ja

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F21Y2105/14—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array
    • F21Y2105/18—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array annular; polygonal other than square or rectangular, e.g. for spotlights or for generating an axially symmetrical light beam
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Definitions

  • This disclosure relates to a light emitting device.
  • Japanese Unexamined Patent Publication No. 2018-120959 describes a light emitting device in which an LED chip is mounted on a peripheral portion whose upper surface and side surfaces are covered with a reflecting portion in addition to the first region.
  • the light emitting device described in JP-A-2018-120959 can suppress a decrease in luminous efficiency due to heat generation of the LED chip by mounting an LED chip on the peripheral portion in addition to the first region, and thus a narrow first region. High output is realized with.
  • a light guide plate is provided on the upper part of a plurality of light emitting elements, the side surface of the light guide portion is covered with a reflective surface, and the light introduced into the light guide plate from the plurality of light emitting elements is derived to the outside. Lighting equipment is listed. In the lighting device described in Japanese Patent Application Laid-Open No. 2014-154349, among the light introduced from the light emitting element to the light guide plate arranged above, the light reaching the light emitting surface connected to the reflecting surface is derived to the outside. Therefore, uneven brightness and glare can be suppressed.
  • a light guide plate is provided on the upper part of a light emitting element arranged at a peripheral portion, the side surface of the light guide plate is covered with a light reflection layer, and the light emission of the light emission element is emitted to the light guide plate side by the light reflection layer.
  • Illumination devices having a reflective configuration are described.
  • the lighting device described in Japanese Patent Application Laid-Open No. 2014-86405 can provide a lighting device that can be expected to have excellent light utilization efficiency by improving the amount of emitted light emitted from the peripheral portion.
  • the light emitting element since the light emitting element is arranged over the entire surface of the first region, the light emitting element may be visually recognized as uneven brightness in light emission at low brightness or the like. be. Further, in the light emitting device described in Japanese Patent Application Laid-Open No. 2018-120959, since the fluorescent material is arranged over the entire surface of the first region, the first region is visually recognized by the color of the fluorescent material when the light is turned off, which gives a beautiful impression. May decrease.
  • the object of the present disclosure is to provide a light emitting device having a low risk of uneven brightness.
  • a substrate having a first region and a second region arranged around the first region, a plurality of light emitting elements mounted on the substrate in the second region, and a plurality of light emitting elements.
  • the encapsulant arranged on the substrate so as to cover the light emitting element, the reflective material arranged on the upper side of the encapsulant and on the side opposite to the first region side, and the first encapsulant having an upper surface and having an upper surface. It has a light guide material arranged in the first region facing the side surface on the region side.
  • the encapsulant contains a fluorescent material that converts the light emitted from a plurality of light emitting elements into wavelengths and emits light having different wavelengths.
  • the reflective material and the light guide material do not contain a fluorescent material.
  • the encapsulant converts the light emitted from the plurality of light emitting elements into wavelengths and emits the light as a second wavelength light different from the first wavelength light emitted from the plurality of light emitting elements.
  • the first encapsulant containing one fluorescent material and the light emitted from a plurality of light emitting elements are wavelength-converted to obtain light having a third wavelength different from the light of the first wavelength emitted from the plurality of light emitting elements. It is preferable that each of the first encapsulant and the second encapsulant encapsulates any of a plurality of light emitting elements, including the second encapsulant containing the emitted second fluorescent material.
  • the plurality of light emitting elements are arranged on the side opposite to the first region side of the first group light emitting element and the first group light emitting element arranged close to the outer edge portion of the light guide material. It is preferable that the first encapsulant seals the first group of light emitting elements, and the second encapsulant encloses the second group of light emitting elements, including the arranged second group of light emitting elements. ..
  • the first sealing material seals all of the plurality of light emitting elements, and the second sealing material seals only a part of the plurality of light emitting elements.
  • the encapsulant further includes a third encapsulant containing no fluorescent material, and the third encapsulant is a first encapsulant, a second encapsulant, or a plurality of light emitting elements. Of these, it is preferable to seal the light emitting element that is not sealed by the first sealing material and the front two sealing materials.
  • the encapsulant does not contain a fluorescent material.
  • the plurality of light emitting elements include a first light emitting element that emits light having a first wavelength and a second light emitting element that emits light having a wavelength different from the first wavelength.
  • the first light emitting element and the second light emitting element are alternately arranged on the substrate.
  • the plurality of light emitting elements are SMD type LED chips that emit light in the vertical direction or the horizontal direction with respect to the substrate.
  • the first region has a circular or polygonal shape
  • the upper surface of the light guide material has the same outer shape as the first region
  • the plurality of light emitting elements are on the outer edge portion of the light guide material. It is preferably arranged along.
  • the substrate has a rectangular shape and some of the plurality of light emitting elements are arranged in a row along the longitudinal direction of the substrate.
  • a part of the plurality of light emitting elements may be arranged in the first region, and the reflective material may be arranged above the part of the plurality of light emitting elements arranged in the first region. preferable.
  • the height of the light guide material from the surface of the substrate is set so as to gradually decrease from the central portion to the outer edge portion of the light guide material.
  • the upper surface of the light guide material is dimple-processed.
  • the light emitting device is arranged above the upper surface of the light guide material and further has a low refractive index layer having a lower refractive index than the light guide material.
  • a dot-shaped resin is arranged on the surface of the upper surface of the light guide material.
  • the reflective material is arranged so as to shield the sealing material when the substrate is viewed from above in a plan view.
  • the reflective material includes a frame member arranged along the outer edge of the encapsulant and a shielding member arranged above the encapsulant, and the height of the frame member from the substrate surface is set. , It is preferable that the height of the light guide material is set higher than the height from the substrate surface.
  • the reflective material is a preformed resin member.
  • the light emitting device is arranged above the upper surface of the light guide material and further has a diffusion layer containing a diffuser for diffusing the light emitted from the upper surface and not containing a fluorescent material.
  • the thickness of the central portion of the diffusion layer is thinner than the thickness of the outer edge portion of the diffusion layer.
  • the height of the surface of the diffusion layer from the surface of the substrate is set so as to gradually increase from the central portion to the outer edge portion of the diffusion layer.
  • the light emitting device described above further includes a circuit board that is arranged on a substrate and has electrodes and openings that are electrically connected to the plurality of light emitting elements, and the plurality of light emitting elements are placed on the substrate inside the openings. It is preferably implemented.
  • the surface of the substrate is textured in the first region.
  • a protrusion that reflects the light emitted from the encapsulant is arranged on the surface of the substrate in the first region.
  • the possibility of uneven brightness can be reduced. Further, in the light emitting device according to the embodiment, the color of the fluorescent material is not visually recognized from the outside when the light is turned off, and the possibility that the aesthetic appearance is deteriorated can be reduced.
  • FIG. 1A It is a top view of the light emitting device which concerns on 1st Embodiment. It is sectional drawing which follows the AA line in FIG. 1A. It is a figure which shows the light emitting state of the light emitting device shown in FIG. 1A. It is a figure (the 1) which shows the manufacturing method of the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 3A. It is a figure (the 2) which shows the manufacturing method of the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 4A. It is a figure (the 3) which shows the manufacturing method of the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 5A.
  • FIG. 4 which shows the manufacturing method of the light emitting device shown in FIG. 6 is a cross-sectional view taken along the line AA in FIG. 6A.
  • FIG. 5 is a diagram (No. 5) showing a method of manufacturing the light emitting device shown in FIG. 1. It is sectional drawing which follows the AA line in FIG. 7A. It is a top view of the light emitting device which concerns on 2nd Embodiment.
  • FIG. 8 is a cross-sectional view taken along the line BB in FIG. 8A. It is a top view of the light emitting device which concerns on 3rd Embodiment.
  • 9 is a cross-sectional view taken along the line CC in FIG. 9A.
  • FIG. 11 is a cross-sectional view taken along the line EE in FIG. 11A. It is sectional drawing of the light emitting device which concerns on 1st modification of 1st Embodiment. It is sectional drawing of the light emitting device which concerns on 2nd modification of 1st Embodiment. It is sectional drawing of the light emitting device which concerns on 3rd modification of 1st Embodiment. It is sectional drawing of the light emitting device which concerns on 4th modification of 1st Embodiment.
  • FIG. 19A It is a figure (the 1) which shows the manufacturing method of the light emitting device shown in FIG. 19A is a cross-sectional view taken along the line AA in FIG. 19A. It is a figure (the 2) which shows the manufacturing method of the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 20A.
  • FIG. 3 is a diagram (No. 3) showing a method of manufacturing the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 21A.
  • FIG. 4 is a diagram (No. 4) showing a method of manufacturing the light emitting device shown in FIG. It is sectional drawing which follows the AA line in FIG. 22A.
  • FIG. 5 is a diagram (No.
  • FIG. 23 is a cross-sectional view taken along the line AA in FIG. 23A.
  • FIG. 6 is a diagram (No. 6) showing a method of manufacturing the light emitting device shown in FIG.
  • FIG. 24 is a cross-sectional view taken along the line AA in FIG. 24A. It is a top view of the light emitting device which concerns on 7th Embodiment. It is sectional drawing which follows the line BB in FIG. 25A. It is a figure (the 1) which shows the manufacturing method of the light emitting device shown in FIG. It is sectional drawing which follows the line BB in FIG. 26A.
  • FIG. 2 is a diagram (No.
  • FIG. 25 shows a method of manufacturing the light emitting device shown in FIG. 25. It is sectional drawing which follows the line BB in FIG. 27A. It is a top view of the light emitting device which concerns on 8th Embodiment.
  • FIG. 8 is a cross-sectional view taken along the line CC in FIG. 28A. It is a top view of the light emitting device which concerns on 9th Embodiment. It is sectional drawing which follows the DD line in FIG. 29A. It is a top view of the light emitting device which concerns on 10th Embodiment.
  • FIG. 3 is a cross-sectional view taken along the line EE in FIG. 30A. It is a top view of the light emitting device which concerns on 11th Embodiment.
  • FIG. 31A It is sectional drawing which follows the FF line in FIG. 31A. It is a top view of the light emitting device which concerns on 12th Embodiment. It is sectional drawing which follows the GG line in FIG. 32A. It is a top view of the light emitting device which concerns on 13th Embodiment. It is sectional drawing which follows the HH line in FIG. 33A. It is a top view of the light emitting device which concerns on 14th Embodiment.
  • FIG. 3 is a cross-sectional view taken along the line I-I in FIG. 34A. It is a top view of the light emitting device which concerns on 15th Embodiment. It is sectional drawing which follows the AA line in FIG. 35A.
  • FIG. 3 is a cross-sectional view taken along the line CC in FIG. 37A. It is a top view of the light emitting device which concerns on 18th Embodiment. It is sectional drawing which follows the DD line in FIG. 38A. It is a top view of the light emitting device which concerns on 19th Embodiment.
  • FIG. 3 is a cross-sectional view taken along the line CC in FIG. 39A. It is a top view of an example of a surface light emitting SMD.
  • FIG. 40A It is a right side view of the surface light emitting SMD shown in FIG. 40A. It is a back view of the surface light emitting SMD shown in FIG. 40A. It is a top view of an example of a side light emitting SMD. It is a right side view of the side light emitting SMD shown in FIG. 41A. It is a back view of the side light emitting SMD shown in FIG. 41A. It is a figure which shows an example of the lighting apparatus applicable to the light emitting device which concerns on embodiment. It is a figure which shows the example which applied the light emitting device which concerns on a comparative example to a lighting device. It is a figure which shows the example which applied the light emitting device which concerns on embodiment to a lighting device.
  • the "LED (Light Emitting Diode) chip” is a semiconductor element formed by growing a semiconductor such as an InGaN-based compound, an InGaN-based compound, and a GaAsP-based compound as a light emitting layer on a substrate.
  • the LED chip emits light having a predetermined emission wavelength by applying a predetermined voltage between the anode and the cathode arranged on the upper surface, the lower surface, or the upper surface and the lower surface.
  • the semiconductor structure includes a homostructure such as a MIS junction, a PI junction, and a PN junction, a heterostructure, a double heterostructure, and the like.
  • the emission wavelength can be selected from various wavelengths depending on the material of the LED chip, the growth temperature, and the like. The wavelength of the light emitted by the LED chip will be described in the corresponding embodiment.
  • the “LED package” is a component or “LED chip” in which an "LED chip” is mounted on a substrate and the mounted “LED chip” is sealed with a resin or a resin containing a fluorescent material.
  • a component whose upper surface or upper surface and side surface are only coated with a resin containing a fluorescent material and includes a top surface light emitting SMD (Surface Mounted Device), a side light emitting SMD, and the like.
  • the fluorescent material means a material that absorbs light of a predetermined wavelength emitted from the "LED chip” and emits light of a different wavelength, and as a result, the "LED chip” is referred to as "LED chip”.
  • the light emitted from the above and the light emitted from the fluorescent material are mixed to emit light.
  • the "LED package” does not contain a fluorescent material, and may be configured so that light having a wavelength output from the "LED chip” contained therein is emitted as it is.
  • the "light emitting element” includes both forms of “LED chip” and “LED package” and emits light having a predetermined wavelength.
  • FIG. 1A is a plan view of the light emitting device 100 according to the first embodiment
  • FIG. 1B is a cross-sectional view taken along the line AA shown in FIG. 1A.
  • the light emitting device 100 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 31, a reflective material 32, and a guide. It has a light material 33.
  • the encapsulant 31 contains a fluorescent material 30 that absorbs light of the first color emitted from the LED chip 20 and emits light of a second color different from the first color, and the light guide material 33 is fluorescent. Does not contain material 30.
  • the sealing material 31 and the light guide material 33 transmit the light of the first color emitted from the LED chip 20 and the light of the second color emitted from the fluorescent material 30, and the reflecting material 32 transmits the light of the first color. Reflects light and light of a second color.
  • the sealing material 31 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so that the fluorescent material is turned off when the light is turned off.
  • the color of is not visible from the outside, and there is no risk of degrading the aesthetics.
  • the substrate 10 has a mounting substrate 11, a circuit board 12, an anode electrode 13, a cathode electrode 14, an anode wiring 15, and a cathode wiring 16.
  • the mounting substrate 11 is a metal substrate such as aluminum having high thermal conductivity and reflectance, and has a substantially rectangular planar shape.
  • the mounting board 11 has a first region 17 having a substantially rectangular planar shape in the central portion, and has a second region 18 along the outer periphery of the first region 17. Both the front surface and the back surface of the substrate 10 including the first region 17 and the second region 18 are flat surfaces.
  • the mounting board 11 is notched with a pair of diagonally arranged corners.
  • the circuit board 12 is formed of an insulating material such as an epoxy material, has the same planar shape as the mounting board 11, and is adhered to the mounting board 11.
  • the circuit board 12 is formed with an opening surrounding the first region 17 and the second region 18 on which the 16 LED chips 20 are mounted.
  • the anode electrode 13, the cathode electrode 14, the anode wiring 15, and the cathode wiring 16 are wiring patterns formed of a conductive thin film such as copper on the surface opposite to the surface of the circuit board 12 facing the mounting substrate 11.
  • the anode electrode 13 and the cathode electrode 14 are arranged in the vicinity of the corner where the notch is not formed.
  • the anode electrode 13 and the cathode electrode 14 are connected to a power source (not shown) and supply electric power to each of the LED chips 20 via the anode wiring 15 and the cathode wiring 16.
  • the portion of the anode wiring 15 and the cathode wiring 16 that is not covered with the sealing material 31 and the reflective material 32 is covered with an insulating layer such as a resist.
  • the anode wiring 15 is connected to the anode electrode 13 and is connected to one of the four light emitting elements arranged along each side of the first region 17 via the bonding wire 21.
  • the cathode wiring 16 is connected to the cathode electrode 14 and is connected to one of the four light emitting elements arranged along each side of the first region 17 via the bonding wire 21.
  • the 16 LED chips 20 are semiconductor devices that emit blue light, for example, formed of an InGaN-based compound semiconductor having a wavelength range of emitted light of 440 nm to 455 nm. It is preferable to use an element in which each of the 16 LED chips 20 has a substantially rectangular planar shape and has substantially the same light emitting characteristics such as forward voltage (VF), temperature characteristics, and life.
  • VF forward voltage
  • the 16 LED chips 20 are mounted on the second region 18 of the substrate 10 by four along each side of the first region 17 so as to be along the outer circumference of the first region 17.
  • the four LED chips 20 mounted in the second region 18 along each side of the first region 17 are connected in series between the anode electrode 13 and the cathode electrode 14.
  • the LED chips 20 are connected so as to connect four light emitting element trains connected in series by four in parallel.
  • 16 LED chips 20 are arranged, but the number of LED chips 20 mounted may be less than 16 or 17 or more. Further, in the light emitting device 100, four LED chips 20 are connected in series, but the number of LED chips 20 connected in series may be less than three or five or more. Further, in the light emitting device 100, four light emitting element rows are connected in parallel, but the number of light emitting element rows connected in parallel may be less than three or five or more.
  • the sealing material 31 is a synthetic resin such as a silicone resin containing the fluorescent material 30.
  • the sealing material 31 is arranged along the outer periphery of the first region 17 so as to cover a part of the anode wiring 15 and the cathode wiring 16 as well as the LED chip 20 and the bonding wire 21.
  • the sealing material 31 has a frame-shaped planar shape surrounding the first region 17.
  • the fluorescent material 30 contained in the sealing material 31 is a fluorescent material that absorbs blue light, which is the first color emitted from the LED chip 20, and emits light of a second color different from the first color.
  • the fluorescent material 30 is a YAG (yttrium aluminum garnet) fluorescent material activated by selenium that emits yellow light having a diameter of, for example, 550 nm to 580 nm.
  • the fluorescent material 30 is Eu 2+ (europium) solid-soluble CaAlSiN 3 (calcium) that emits red light having a peak wavelength range of 600 nm to 630 nm.
  • -Aluminum / silicone oxynitride It may be the one to which a fluorescent material is added. Further, as the fluorescent material 30, for example, a YAG-based fluorescent material activated by cerium that emits green light having a peak wavelength range of 535 nm to 570 nm may be added.
  • the fluorescent material 30 is a silicate-based fluorescent material activated with Eu 2+ (Europium) that emits blue-green light having a peak wavelength range of 480 nm to 500 nm, or a barium silicone oxynitride fluorescent material. There may be. Further, the fluorescent material 30 may be a CaAlSiN 3 (calcium / aluminum / silicone oxynitride) fluorescent material having a solid solution of Eu 2+ (europium) that emits red light having a peak wavelength range of 600 nm to 630 nm. good. Further, the fluorescent material 30 may contain a plurality of types of fluorescent materials. By differentiating the ratio of the fluorescent materials contained in the fluorescent material 30, it is possible to provide a light emitting device having the same color temperature and different color rendering properties.
  • Eu 2+ Europium
  • the fluorescent material 30 may be a CaAlSiN 3 (calcium / aluminum / silicone oxynitride) fluorescent material having a solid solution of Eu 2+ (europium
  • the fluorescent material 30 may be an orthosilicate fluorescent material activated with europium that emits yellow light having a peak wavelength of 550 nm to 580 nm.
  • the fluorescent material 30 includes an orthosilicate fluorescent material activated with europium that emits yellow light, and an active strontium aluminate fluorescent material with europium that emits yellow light having a peak wavelength of 480 nm to 500 nm. It may be included. Further, it may contain a europium-activated orthosilicate fluorescent material that emits yellow light, and a europium solid-soluble calcium-aluminum-silicone oxynitride fluorescent material that emits red light.
  • the reflective material 32 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and is a first color light emitted from the LED chip 20 and a second light emitted from the fluorescent material 30. It is a reflective material that reflects colored light.
  • the reflective material 32 is arranged so as to cover at least a part of the upper part of the sealing material 31 and surround the first region 17. Like the sealing material 31, the reflective material 32 has a frame-shaped planar shape surrounding the first region 17.
  • the reflective material 32 is formed along the light guide material 33 so as to cover the upper side of the sealing material 31 and the side opposite to the first region 17. Therefore, an opening 90 due to the reflective material 32 is formed on the first region 17 side of the sealing material 31.
  • the light of the first color emitted from the plurality of LED chips 20 and the light of the second color emitted from the fluorescent material 30 are reflected by the reflective material 32 and emitted from the opening 90 to the light guide material 33.
  • the light guide material 33 is a synthetic resin such as a silicone resin that does not contain the fluorescent material 30, and is a first color light emitted from the LED chip 20 and a second color light emitted from the fluorescent material 30. Is transparent.
  • the light guide material 33 guides the light of the first color emitted from the LED chip 20 and the light of the second color emitted from the fluorescent material 30 to the first region 17.
  • the light guided to the first region 17 is directly or reflected and emitted to the outside from the entire upper surface of the first region 17. That is, in the light emitting device 100, when the LED chip 20 is lit, the entire upper surface of the first region 17 emits surface light.
  • surface light can be emitted without uneven brightness.
  • FIG. 2 is a diagram showing a light emitting state of the light emitting device 100.
  • FIG. 2 is a cross-sectional view taken along the line AA shown in FIG. 1A.
  • the alternate long and short dash arrow line indicates the optical path of the light emitted from the LED chip 20.
  • the light of the first color emitted from the LED chip 20 is reflected by the reflective material 32 covering the sealing material 31, and is reflected from the light emitting device 100 to the outside through the first region 17 in which the light guide material 33 is arranged. It is emitted. Further, a part of the light of the first color emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the encapsulant 31 and emitted from the fluorescent material 30 as the light of the second color.
  • FIGS. 3 to 7 shows the first step
  • FIG. 4 shows the second step
  • FIG. 5 shows the third step
  • FIG. 6 shows the fourth step
  • FIG. 7 shows the fifth step. 3 to 7
  • the drawing A is a plan view
  • the drawing B is a cross-sectional view corresponding to a cross-sectional view taken along the line AA shown in FIG. 1A.
  • the substrate 10 is provided in the first step.
  • 16 LED chips 20 are mounted in the second region 18 along the outer circumference of the first region 17.
  • the 16 LED chips 20 are mounted by die-bonding (not shown) along one side of the first region 17, four by four.
  • 16 LED chips 20 are connected in series between the anode wiring 15 and the cathode wiring 16 by 4 bonding wires 21 each.
  • the LED chips 20 arranged at one end of the four LED chips 20 mounted along one side of the first region 17 are connected to the anode wiring 15 via the bonding wire 21.
  • the LED chips 20 arranged at the other ends of the four LED chips 20 mounted along one side of the first region 17 are connected to the cathode wiring 16 via the bonding wire 21.
  • the sealing material 31 is arranged so as to cover the LED chip 20 and the bonding wire 21.
  • the reflective material 32 is arranged so as to cover the sealing material 31 and surround the first region 17.
  • the reflector 32 is arranged so that the opening 90 is formed along the first region 17.
  • the light guide material 33 is arranged in the first region 17 surrounded by the reflective material 32, and the manufacturing process of the light emitting device 100 is completed.
  • the sealing material 31 As the sealing material 31, the reflective material 32 and the light guide material 33, a resin material having a high ticking property may be used.
  • a resin material having high ticking property is used as the sealing material 31, the reflective material 32 and the light guide material 33, even if the sealing material 31, the reflective material 32 and the light guide material 33 are solidified all at once after the sixth step. good.
  • a resin material having low chixing property is used as the sealing material 31, the reflective material 32 and the light guide material 33, the sealing material 31, the reflective material 32 and the light guide material are used in each of the fourth to sixth steps. 33 is solidified separately.
  • the LED chip 20 is not arranged in the first region 17 that can be visually recognized from the outside, there is no possibility that the LED chip 20 is visually recognized as uneven brightness, which is also called a hot spot, in low brightness light emission. Further, since the LED chip 20 is not likely to be visually recognized as uneven brightness, the light guide material 33 does not contain a diffusing material in order to prevent the occurrence of uneven brightness, and the luminous efficiency is improved by containing the diffusing material. It does not decrease.
  • the light emitting device 100 does not have a possibility of causing uneven brightness, it is possible to realize high-brightness lighting without controlling the uneven brightness in a light emitting device such as a lighting device equipped with the light emitting device 100.
  • the sealing material 31 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so that the fluorescent material is turned off when the light is turned off.
  • the color of is not visible from the outside, and there is no risk of degrading the aesthetics.
  • the light emitting device 100 since all 16 LED chips 20 are mounted on a single mounting substrate 11, all the temperature changes of the 16 LED chips 20 are interlocked with each other, and light emission depends on the temperature characteristics. There is little risk that the characteristics will vary from each other.
  • the light guide material 33 that functions as a light guide is arranged in the first region 17, it is possible to emit light without uneven brightness.
  • FIG. 8A is a plan view of the light emitting device 101 according to the second embodiment
  • FIG. 8B is a cross-sectional view taken along the line BB shown in FIG. 8A.
  • the light emitting device 101 is different from the light emitting device 100 in that the first sealing material 34 and the second sealing material 35 are provided in place of the sealing material 31.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the position where the first encapsulant 34 is arranged is different from that of the encapsulant 31. Since the configuration and function of the first encapsulant 34 other than the position where it is arranged are the same as those of the encapsulant 31, detailed description thereof will be omitted here.
  • the first sealing material 34 is not arranged so as to cover the LED chip 20, but is arranged between the first region 17 and the LED chip 20.
  • the second sealing material 35 is a synthetic resin such as a silicone resin that does not contain the fluorescent material 30.
  • the second encapsulant 35 is arranged so as to cover the LED chip 20 and the first encapsulant 34.
  • the reflective material 32 is formed so as to cover the upper side of the first sealing material 34, the upper side of the second sealing material 35, and the side opposite to the first region 17.
  • the first sealing material 34 arranged between the first region 17 and the LED chip 20 contains the fluorescent material 30, so that a part of the light emitted from the LED chip 20 is a part of the light emitted from the LED chip 20.
  • the fluorescent material 30 contained in the first sealing material 34 As a part of the light emitted from the LED chip 20 is absorbed by the fluorescent material 30, the light of the second color is emitted from the fluorescent material 30.
  • the light of the first color and the light of the second color are emitted to the outside from the light guide material 33 via the first region 17.
  • the position where the first sealing material 34 is arranged and the second sealing material 35 are provided between the step of arranging the first sealing material 34 and the step of arranging the reflective material 32. Having a step of arranging is different from the manufacturing method of the light emitting device 100. Since the manufacturing method of the light emitting device 101 other than the step of arranging the second sealing material 35 is the same as the manufacturing method of the light emitting device 100, detailed description thereof will be omitted here.
  • the light emitting device 101 arranges the first sealing material 34 between the first region 17 and the LED chip 20, the light of the first color and the second color immediately before being incident on the first region 17. It can be mixed with light and emitted. Since the light emitting device 101 mixes and emits the light of the first color and the light of the second color immediately before being incident on the first region 17, it is easier to adjust the chromaticity than the light emitting device 100. ..
  • the first sealing material 34 containing the fluorescent material 30 is covered with the reflective material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17, so that when the light is turned off.
  • the color of the fluorescent material is not visible from the outside, and there is no risk of degrading the aesthetic appearance.
  • FIG. 9A is a plan view of the light emitting device 102 according to the third embodiment
  • FIG. 9B is a cross-sectional view taken along the line CC shown in FIG. 9A.
  • the light emitting device 102 is different from the light emitting device 100 in that the substrate 40 is provided in place of the substrate 10.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the board 40 differs from the board 10 in that it has a mounting board 41 instead of the mounting board 11. Since the configurations and functions of the components of the substrate 40 other than the mounting substrate 41 are the same as the configurations and functions of the components of the substrate 10 having the same reference numerals, detailed description thereof will be omitted here.
  • the mounting board 41 differs from the mounting board 11 in that the mounting board 41 has a first region 47 instead of the first region 17. Since the configurations and functions of the components of the mounting board 41 other than the first region 47 are the same as the configurations and functions of the components of the mounting board 11 having the same reference numerals, detailed description thereof will be omitted here.
  • the first region 47 is different from the first region 17 in that it is textured.
  • the manufacturing method of the light emitting device 102 is the same as the manufacturing method of the light emitting device 100 except that the mounting substrate 41 in which the first region 47 is textured is used, detailed description thereof will be omitted here.
  • the embossing of the first region 47 is formed by etching, for example, in a state where the region other than the first region 47 of the mounting substrate 41 is masked.
  • the first region 47 is textured in the light emitting device 102, the light of the first and second colors incident on the first region 47 is diffused in the first region 47 and mixed with the light emitting device 100. It is possible to emit light of the first and second colors in this state.
  • FIG. 10A is a plan view of the light emitting device 103 according to the fourth embodiment
  • FIG. 10B is a cross-sectional view taken along the line DD shown in FIG. 10A.
  • the light emitting device 103 is different from the light emitting device 100 in that it has the light guide material 36 instead of the light guide material 33.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the light guide material 36 is different from the light guide material 33 in that the surface is dimple-processed. Since the configuration and function of the light guide material 36 other than the surface being dimple-processed are the same as the configuration and function of the light guide material 33 with the same reference numeral, detailed description thereof will be omitted here.
  • the manufacturing method of the light emitting device 103 is the same as the manufacturing method of the light emitting device 100 except that the surface of the light guide material 36 is dimple-processed after the light guide material 36 is arranged, detailed description thereof is omitted here. do.
  • the dimple processing on the surface of the light guide material 36 is formed by, for example, laser processing the surface of the light guide material 36.
  • the surface of the light guide material 36 is dimple-processed, the light of the first and second colors incident on the surface of the light guide material 36 is diffused on the surface of the light guide material 36 to emit light. It is possible to emit light of the first and second colors in a state where the colors are mixed more than the device 100.
  • the mounting board 41 having the first region 47 subjected to the grain processing described in the light emitting device 102 may be used.
  • FIG. 11A is a plan view of the light emitting device 104 according to the fifth embodiment
  • FIG. 11B is a cross-sectional view taken along the line EE shown in FIG. 11A.
  • the light emitting device 104 is different from the light emitting device 100 in that the sealing material 37 is provided in place of the sealing material 31. Further, the light emitting device 104 is different from the light emitting device 100 in that the first LED chip 51, the second LED chip 52, and the third LED chip 53 are provided in place of the LED chip 20. In the light emitting device 104, the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the encapsulant 37 is different from the encapsulant 31 in that it does not contain the fluorescent material 30. Since the configuration and function of the encapsulant 37 other than not containing the fluorescent material 30 are the same as the configuration and function of the encapsulant 31, detailed description thereof will be omitted here.
  • the sealing material 37 is arranged so as to cover each of the first LED chip 51, the second LED chip 52, and the third LED chip 53.
  • the first LED chip 51 is a semiconductor element that emits blue light having a wavelength range of 440 nm to 455 nm, and the letter “B" is added in FIG. 11A.
  • the second LED chip 52 is a semiconductor element that emits green light and is formed of an InGaN-based compound semiconductor or the like having a wavelength range of emitted light of 505 nm to 555 nm, and is designated by the letter “G” in FIG. 11A.
  • the third LED chip 53 is a semiconductor element that emits red light and is formed of a GaAsP-based compound semiconductor or the like having a wavelength range of emitted light of 620 nm to 750 nm, and is designated by the letter “R” in FIG. 11A.
  • the blue color emitted by the first LED chip 51 is an example of light of the first color
  • the green color emitted by the second LED chip 52 is an example of light of the second color
  • the red color emitted by the third LED chip 53 is the first. It is an example of the light of 3.
  • the manufacturing method of the light emitting device 104 is the same as the manufacturing method of the light emitting device 100 except that the first LED chip 51, the second LED chip 52, and the third LED chip 53 are mounted in place of the LED chip 20, and thus a detailed description thereof will be given here. Is omitted.
  • the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not arranged in the visible first region 17, the first LED chip 51, the second LED chip 52, and the second LED chip 52 are not arranged even during low-luminance light emission. 3 There is no possibility that the LED chip 53 will be visually recognized as uneven brightness.
  • the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not arranged in the visible first region 17, the sealing material 37 does not contain the fluorescent material 30, and the fluorescent material 30 is not contained. Since the light guide material 33 that does not contain the above is arranged in the first region 17, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the third LED chip 53 is a GaAS-based red light emitting semiconductor element having poor temperature characteristics, when it is mounted on the same mounting substrate as the first LED chip 51 which is a blue light emitting semiconductor element, the heat generated by the first LED chip 51 is generated. It may be affected. Therefore, in the light emitting device 104, the third LED chip 53 is replaced with an LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Is also good. By using such an LED package, it is possible to make the influence of the temperature rise the same between the chips or packages that emit light of each color.
  • the second LED chip 52 is replaced with a first LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a green fluorescent material that absorbs blue light and emits green light, and the third LED is used.
  • the chip 53 may be replaced with a second LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Even in this case, since the first LED chip 51, the first LED package, and the second LED package are covered with the reflective material 32, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the mounting board 41 having the first region 47 subjected to the grain processing described in the light emitting device 102 may be used.
  • the light guide material 33 instead of the light guide material 33, the light guide material 36 whose surface is dimple-processed may be used as described in the light emitting device 103.
  • both the mounting substrate 41 having the first region 47 which has been textured and the light guide material 36 whose surface is dimple-processed may be used.
  • FIG. 12A is a cross-sectional view of the light emitting device 105 according to the first modification of the light emitting device 100
  • FIG. 12B is a cross-sectional view of the light emitting device 106 according to the second modification of the light emitting device 100
  • FIG. 12C is a cross-sectional view of the light emitting device 100. It is sectional drawing of the light emitting device 107 which concerns on the 3rd modification of. 12A to 12C are cross-sectional views corresponding to the cross-sectional views taken along the line AA shown in FIG. 1A.
  • Each of the light emitting devices 105 to 107 is different from the light emitting device 100 in that it has a filler 38 arranged between the sealing material 31 and the reflective material 32.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the filler 38 is a synthetic resin such as a silicone resin that does not contain the fluorescent material 30, and is arranged so as to cover the sealing material 31.
  • the filler 38 is arranged so as to cover the entire surface of the sealing material 31.
  • the filler 38 is arranged so as to cover the surface of the sealing material 31 other than the surface in contact with the light guide material 33, and in the light emitting device 107, the filler 38 is the light guide material of the sealing material 31. It is arranged so as to cover a surface other than the surface opposite to the surface in contact with 33.
  • a filler may be arranged between the sealing material 31 and the reflective material 32 in the same manner as in the above-mentioned light emitting devices 105 to 107.
  • the filler By arranging the filler between the sealing material 31 and the reflective material 32, the amount of light absorbed by the reflective material 32 among the light emitted from the LED chip 20 and the sealing material 31 can be reduced. The light can be efficiently guided to the first region 17.
  • FIG. 13A is a cross-sectional view of the light emitting device 108 according to the fourth modification of the light emitting device 100
  • FIG. 13B is a cross-sectional view of the light emitting device 109 according to the fifth modification of the light emitting device 100
  • 13A and 13B are cross-sectional views corresponding to the cross-sectional views taken along the line AA shown in FIG. 1A.
  • Each of the light emitting devices 108 and 109 is different from the light emitting device 100 in that it has a diffusion layer 39 arranged so as to cover the light guide material 33.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the diffusion layer 39 is a synthetic resin such as a silicone resin containing a filler formed of silica, titanium oxide, or the like, and is arranged so as to cover the light guide material 33.
  • the diffusion layer 39 is arranged so as to cover the entire surface of the light guide material 33.
  • the light guide material 33 is arranged so as to cover the sealing material 31 in addition to the first region 17.
  • the diffusion layer may be arranged on the light guide material 33 or 36 in the same manner as the above-mentioned light emitting devices 108 and 109. By arranging the diffusion layer on the light guide material 33 or 36, the uneven brightness can be further reduced.
  • FIG. 14 is a plan view of the light emitting device 110 according to the sixth modification of the light emitting device 100
  • FIG. 15 is a plan view of the light emitting device 111 according to the seventh modification of the light emitting device 100
  • FIG. 16 is a plan view of the light emitting device 100. It is a top view of the light emitting device 112 which concerns on the 8th modification of.
  • the cross-sectional view of the light emitting devices 110 to 112 along the line AA is the same as that of FIG. 1B.
  • Each of the light emitting devices 110 to 112 differs from the light emitting device 100 in that the first sealing material 81 and the second sealing material 82 are provided in place of the sealing material 31.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the first encapsulant 81 is a synthetic resin such as a silicone resin containing an orthosilicate fluorescent material activated by europium that absorbs the light emitted from the LED chip 20 and emits yellow light.
  • a synthetic resin such as a silicone resin containing an orthosilicate fluorescent material activated by europium that absorbs the light emitted from the LED chip 20 and emits yellow light.
  • the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed.
  • cold white light having a color temperature of 6500 K is emitted from the first encapsulant 81.
  • the first encapsulant 81 is a silicone containing a YAG (yttrium aluminum garnet) fluorescent material activated by cerium that absorbs the light emitted from the LED chip 20 and emits yellow light. It may be a synthetic resin such as a resin. In this case, when the light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed. For example, cold white light having a color temperature of 6500 K is emitted from the first encapsulant 81.
  • YAG yttrium aluminum garnet
  • the second encapsulant 82 emits a YAG (yttrium aluminum garnet) fluorescent material activated by cerium that absorbs the light emitted from the LED chip 20 and emits yellow light, and emits red light.
  • YAG yttrium aluminum garnet
  • It is a synthetic resin such as a silicone resin containing a CaAlSiN 3 fluorescent material which is a solid solution of europium.
  • the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second encapsulant 82 are mixed, for example.
  • Warm white light having a color temperature of 2700 K is emitted from the second encapsulant 82).
  • the second encapsulant 82 is a YAG-based fluorescent material activated by cerium that absorbs the light emitted from the LED chip 20 and emits green light, and a solid solution of europium that emits red light. It may be a synthetic resin such as a silicone resin containing a CaAlSiN 3 fluorescent material. When the light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second encapsulant 82 are mixed, for example. Warm-colored light having a color temperature of 2700 K is emitted from the first sealing material 81.
  • each of the pair of first encapsulant 81 and the pair of second encapsulant 82 is arranged so as to extend parallel to each other on the pair of opposite sides.
  • each of the pair of first encapsulant 81 and the pair of second encapsulant 82 is arranged so as to extend in a direction orthogonal to each other on a pair of adjacent sides.
  • each of the first sealing material 81 and the second sealing material 82 is arranged so as to extend to a pair of adjacent sides.
  • all 16 LED chips 20 are connected to the anode electrode 13 and the cathode electrode 14 which are a pair of electrode pairs, but the LED chips 20 are connected to two pairs of electrodes. You may.
  • the LED chip 20 is connected to two pairs of electrodes, the LED chip 20 sealed by the first encapsulant 81 is connected to one electrode pair, and the second encapsulant is connected to the other electrode pair.
  • the LED chip 20 sealed by 82 is connected.
  • the sealing material 31 or the sealing material 34 contains the same fluorescent material 30, but each region is arranged like the light emitting devices 110 to 112. It may contain different fluorescent materials depending on the environment.
  • FIG. 17A is a plan view of the light emitting device 113 according to the sixth embodiment
  • FIG. 17B is a cross-sectional view taken along the line AA shown in FIG. 17A.
  • the light emitting device 113 is different from the light emitting device 100 in the configurations of the sealing material 231, the reflective material 232, the light guide material 233, and the diffusion layer 234.
  • the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
  • the light emitting device 113 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 231 and a reflective material 232, and a guide. It has a light material 233 and a diffusion layer 234.
  • the encapsulant 231 contains a fluorescent material 30 that absorbs the first light having a first wavelength emitted from the LED chip 20 and emits a second light having a second wavelength different from the first wavelength, and is a light guide material.
  • 233 does not contain the fluorescent material 30.
  • the sealing material 231 and the light guide material 233 transmit the first light emitted from the LED chip 20 and the second light emitted from the fluorescent material 30, and the reflector 232 reflects the first light and the second light.
  • the light guide material 233 is arranged so that the outer edge thereof overlaps with the sealing material 231 when viewed in a plan view.
  • the LED chip 20 is not arranged in the first region 17 that can be visually recognized from the outside, there is no possibility that the LED chip 20 is visually recognized as uneven brightness. Further, in the light emitting device 113, since the sealing material 231 containing the fluorescent material 30 is covered with the reflective material 232 and the light guide material 233 not containing the fluorescent material 30 is arranged in the first region 17, the fluorescent material is turned off. The color of is not visible from the outside, and there is no risk of degrading the aesthetics.
  • the light guide material 233 is arranged so that the outer edge thereof overlaps with the sealing material 231 when the substrate 10 is viewed in a plan view, it is emitted from the LED chip 20 and reflected by the reflective material 232. Since the emitted light is radiated to the first region 17, the luminous efficiency can be increased.
  • the sealing material 231 is a synthetic resin such as a silicone resin containing the fluorescent material 30.
  • the sealing material 231 is arranged along the outer periphery of the first region 17 so as to cover a part of the anode wiring 15 and the cathode wiring 16 as well as the LED chip 20 and the bonding wire 21.
  • the sealing material 231 has a frame-shaped planar shape surrounding the first region 17.
  • the fluorescent material 30 contained in the sealing material 231 absorbs the light emitted from the LED chip 20 and has a second wavelength different from the first wavelength which is the wavelength of the light emitted from the LED chip 20. It is a phosphor that emits light.
  • the fluorescent material 30 is a YAG (yttrium aluminum garnet) -based fluorescent material activated by selenium that emits yellow light having a diameter of, for example, 550 nm to 580 nm.
  • the fluorescent material 30 is a CaAlSiN 3 (calcium) solid-soluble Eu 2+ (europium) that emits red light having a peak wavelength range of 600 nm to 630 nm, in addition to a YAG-based phosphor that emits yellow light.
  • -Aluminum / silicone oxynitride It may be the one to which a fluorescent substance is added. Further, for the fluorescent material 30, for example, a YAG-based phosphor activated with cerium that emits green light having a peak wavelength range of 535 nm to 570 nm may be added.
  • the fluorescent material 30 is a silicate-based fluorescent substance activated by Eu 2+ (Europium) that emits blue-green light having a peak wavelength range of 480 nm to 500 nm, or a barium silicone oxynitride phosphor. There may be. Further, the fluorescent material 30 may be a CaAlSiN 3 (calcium / aluminum / silicone oxynitride) phosphor having a solid solution of Eu 2+ (europium) that emits red light having a peak wavelength range of 600 nm to 630 nm. good. Further, the fluorescent material 30 may contain a plurality of types of fluorescent substances. By differentiating the ratio of the phosphors contained in the fluorescent material 30, it is possible to provide a light emitting device having the same color temperature and different color rendering properties.
  • Eu 2+ Europium
  • the fluorescent material 30 may be a CaAlSiN 3 (calcium / aluminum / silicone oxynitride) phosphor having a solid solution of Eu 2
  • the fluorescent material 30 may be an orthosilicate phosphor activated with europium that emits yellow light having a peak wavelength of 550 nm to 580 nm. Further, the fluorescent material 30 includes an orthosilicate phosphor activated with europium that emits yellow light, and a europium-activated strontium aluminate phosphor that emits yellow light having a peak wavelength of 480 nm to 500 nm. It may be included. Further, it may contain a europium-activated orthosilicate phosphor that emits yellow light, and a europium solid-soluble calcium-aluminum-silicone oxynitride phosphor that emits red light.
  • the reflective material 232 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and is emitted from the blue light emitted from the LED chip 20 and the fluorescent material 30 contained in the sealing material 231. Reflects the yellow light that is produced.
  • the reflective material 232 is arranged so as to cover a part of the anode wiring 15 and the cathode wiring 16 and surround the first region 17.
  • the reflective material 232 has a frame-shaped planar shape surrounding the first region 17.
  • the reflective material 232 is formed along the light guide material 233 so as to cover the upper side of the sealing material 231 and the side opposite to the first region 17. Therefore, an opening 90 due to the reflective material 232 is formed on the first region 17 side of the sealing material 231.
  • the light of the first color emitted from the plurality of LED chips 20 and the light of the second color emitted from the fluorescent material 30 are reflected by the reflective material 232 and emitted from the opening 90 to the light guide material 233.
  • the light guide material 233 is a synthetic resin such as a silicone resin that does not contain the fluorescent material 30, and propagates to the first region 17 while transmitting the light emitted from the sealing material 231.
  • the light guide material 233 is arranged adjacent to the opening 90 in the first region 17 surrounded by the reflective material 232 so that the outer edge thereof overlaps with the sealing material 231 when the substrate 10 is viewed in a plan view.
  • the height of the light guide material 233 is arranged so as to be highest in the central portion of the first region 17 and gradually decrease toward the outer edge of the light emitting region.
  • the light guide material 233 is preferably one having a high chixo property.
  • the refractive index of the light guide material 233 is, for example, 1.46. Since the light guide material 233 has a higher refractive index than the diffusion layer 234, the critical angle between the light guide material 233 and the diffusion layer becomes large, and the light emitted from the sealing material 231 is the light guide material 233. And the diffusion layer 234 are easily totally reflected. The light emitted from the sealing material 231 is easily totally reflected between the light guide material 233 and the diffusion layer 234, so that the light is guided to the center of the light emitting region inside the light guide material 233 and is guided to the center of the light emitting region.
  • the 113 can be surface-emitted without uneven brightness.
  • the diffusion layer 234 is a synthetic resin such as a filler formed of silicon dioxide or the like and a silicone resin containing titanium oxide or the like, and has a substantially rectangular planar shape.
  • the refractive index of the diffusion layer 234 is, for example, 1.41.
  • the height of the surface of the diffusion layer 234 is substantially equal to the height of the reflective material 232, and has a substantially uniform height over the entire surface. Since the surface of the diffusion layer 234 has a substantially uniform height and the height of the light guide material 233 gradually decreases from the central portion of the first region 17 toward the outer edge, the thickness of the diffusion layer 234 is determined. The central portion of the first region 17 is the thinnest, and gradually becomes thicker toward the outer edge of the first region 17.
  • the diffusion layer 234 is emitted from the sealing material 231 and diffuses the light guided by the light guide material 233 to improve the color mixing property.
  • the diffusion layer 234 is arranged in the first region 17 surrounded by the reflective material 232 so as to cover the light guide material 233, and the light emitted from the sealing material 231 and guided by the light guide material 233 is transmitted to the first region.
  • the entire surface of 17 is emitted from the upper surface to emit light to the outside.
  • FIG. 18 is a diagram showing a light emitting state of the light emitting device 113.
  • FIG. 18 is a cross-sectional view taken along the line AA shown in FIG. 17A.
  • the alternate long and short dash arrow line indicates the optical path of the light emitted from the LED chip 20.
  • the blue light emitted from the LED chip 20 is reflected by the reflective material 232 covering the sealing material 231 and is external from the light emitting device 113 via the first region 17 in which the light guide material 233 and the diffusion layer 234 are arranged. Is emitted to. Further, a part of the blue light emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the encapsulant 231 and emitted from the fluorescent material 30 as yellow light.
  • FIG. 19 shows the first step
  • FIG. 20 shows the second step
  • FIG. 21 shows the third step
  • FIG. 22 shows the fourth step
  • FIG. 23 shows the fifth step
  • FIG. 24 shows the sixth step.
  • the process is shown. 19 to 24, the drawing A is a plan view
  • the drawing B is a cross-sectional view corresponding to a cross-sectional view taken along the line AA shown in FIG. 17A.
  • the substrate 10 is provided in the first step.
  • 16 LED chips 20 are mounted in the second region 18 along the outer circumference of the first region 17.
  • the 16 LED chips 20 are mounted four by four along one side of the first region 17.
  • 16 LED chips 20 are connected in series between the anode wiring 15 and the cathode wiring 16 by 4 bonding wires 21 each.
  • the LED chips 20 arranged at one end of the four LED chips 20 mounted along one side of the first region 17 are connected to the anode wiring 15 via the bonding wire 21.
  • the LED chips 20 arranged at the other ends of the four LED chips 20 mounted along one side of the first region 17 are connected to the cathode wiring 16 via the bonding wire 21.
  • the sealing material 231 is arranged so as to cover the LED chip 20 and the bonding wire 21.
  • the resin before solidification of the sealing material 231 containing the fluorescent material 30 is arranged so as to cover the LED chip 20 and the bonding wire 21.
  • the resin before solidification of the sealing material 231 is solidified by heating the substrate 10, whereby the sealing material 231 is formed.
  • the light guide material 233 is arranged in the first region 17 so as to cover the inner wall of the sealing material 231.
  • the resin before solidification of the light guide material 233 is arranged so as to cover the top and inner walls of the sealing material 231.
  • the resin before solidification of the light guide material 233 is arranged in a mountain shape in which the height decreases from the central portion of the first region 17 toward the outer edge.
  • the light guide material 233 can be arranged in a mountain shape having a top in the center.
  • the resin before solidification of the light guide material 233 is solidified, so that the light guide material 233 is formed.
  • the reflective material 232 is arranged along the first region 17 so as to cover the entire surface of the sealing material 231 and the outer edge of the light guide material 233.
  • the resin before solidification of the reflective material 232 is arranged so as to cover the sealing material 231.
  • the resin before solidification of the reflective material 232 is solidified, so that the reflective material 232 is formed.
  • the diffusion layer 234 is arranged inside the reflective material 232 so as to cover the light guide material 233.
  • the resin before solidification of the diffusion layer 234 is arranged inside the reflective material 232 so as to have a substantially uniform surface height and cover the light guide material 233.
  • the resin before solidification of the diffusion layer 234 is solidified, so that the diffusion layer 234 is formed and the manufacturing process of the light emitting device 113 is completed.
  • the LED chip 20 is not arranged in the first region 17 that can be visually recognized from the outside, there is no possibility that the LED chip 20 is visually recognized as uneven brightness, which is also called a hot spot. Further, since the light emitting device 113 does not have a possibility of causing uneven brightness, it is possible to realize high-brightness lighting without controlling the uneven brightness in a light emitting device such as a lighting device equipped with the light emitting device 113.
  • the sealing material 231 containing the fluorescent material 30 is covered with the reflective material 232, and the light guide material 233 not containing the fluorescent material 30 is arranged in the first region 17.
  • the fluorescent material 30 is not arranged in the first region 17, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the light emitting device 113 since all 16 LED chips 20 are mounted on a single mounting board 11, all the temperature changes of the 16 LED chips 20 are interlocked with each other, and light emission depends on the temperature characteristics. There is little risk that the characteristics will vary from each other.
  • the light guide material 233 that functions as a light guide is arranged in the first region 17, it is possible to emit light without uneven brightness. Further, in the light emitting device 1, since the light guide material 233 has a higher refractive index than the diffusion layer 234, the light guide is guided to the central portion of the light emitting region inside the light emitting material 233, and the light emitting device 1 has a surface without uneven brightness. It can be made to emit light.
  • the thickness of the diffusion layer 234 is the thinnest in the central portion of the first region 17, and gradually increases toward the outer edge of the first region 17, so that the central portion of the first region 17 is formed. , It is easier to transmit light than the outer edge of the first region 17.
  • the central portion of the first region 17 is the light arriving from the LED chip 20 rather than the outer edge of the first region 17. The amount of light is low.
  • the thickness of the diffusion layer 234 is made thinner at the central portion of the first region 17 than at the outer edge of the first region 17, so that the center of the first region 17 is caused by the distance from the LED chip 20. It is possible to suppress the occurrence of uneven brightness between the portion and the outer edge.
  • FIG. 25A is a plan view of the light emitting device 114 according to the seventh embodiment
  • FIG. 25B is a cross-sectional view taken along the line BB shown in FIG. 25A.
  • the light emitting device 114 differs from the light emitting device 113 in that the frame member 235 and the shielding member 236 are provided in place of the reflective material 232 and the diffusion layer 237 is provided in place of the diffusion layer 234.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the frame member 235 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and has a height equal to or higher than the height of the light guide material 233 and the shielding member 236. Moreover, it is arranged so as to surround the reflective material 236 and has a frame-like planar shape.
  • the shielding member 236 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed, and reflects the light emitted from the LED chip 20 and the fluorescent material 30. Further, the shielding member 236 has a lower content of the reflective fine particles contained than the reflective material 232 and the frame member 235, and transmits a part of the light emitted from the LED chip 20 and the fluorescent material 30.
  • the transmittance of the shielding member 236 is preferably 30% or more and 70% or less, and more preferably 40% or more and 60% or less. Since the shielding member 236 transmits a part of the light emitted from the LED chip 20 and the fluorescent material 30, the occurrence of luminance unevenness is suppressed above the shielding member 236.
  • the frame member 235 and the shielding member 236 serve as the reflective material 232 of the light emitting device 113. That is, the frame member 235 and the shielding member 236 are arranged on the upper side of the sealing material 231 and on the side opposite to the first region 17, and reflect the light emitted from the sealing material 231 to guide the reflected light. It leads to the material 233 side.
  • the diffusion layer 237 is a synthetic resin such as a silicone resin containing a filler formed of silicon dioxide or the like and titanium oxide or the like.
  • the surface of the diffusion layer 237 may be flat, or may have a convex shape with the central portion of the first region 17 at the top or a concave shape with the central portion of the first region 17 at the bottom.
  • the thickness of the central portion of the diffusion layer 237 is thinner than the thickness of the outer edge portion of the diffusion layer 237. Similar to the diffusion layer 234, the thickness of the diffusion layer 237 is the thinnest in the central portion of the first region 17, and gradually increases toward the outer edge of the first region 17.
  • FIG. 26 is a diagram showing a sixth step of the manufacturing method of the light emitting device 114 shown in FIG. 25, and FIG. 27 is a diagram showing a seventh step of the manufacturing method of the light emitting device 114 shown in FIG. 25.
  • the drawing A is a plan view
  • the drawing B is a cross-sectional view taken along the line BB shown in the drawing A.
  • the frame member 235 is arranged so as to surround the periphery of the sealing material 231 in the sixth step.
  • the resin before solidification of the frame member 235 is arranged so as to surround the sealing material 231.
  • the resin before solidification of the frame member 235 has a high ticking property and can be arranged in a wall shape.
  • the frame member 235 is formed by solidifying the resin before solidification of the frame member 235 by heating the substrate 10.
  • the shielding member 236 is arranged along the inner wall of the frame member 235 so as to cover the entire surface of the sealing material 231 and the outer edge of the light guide material 233.
  • the resin before solidification of the shielding member 236 is arranged along the inner wall of the frame member 235 so as to cover the sealing material 231.
  • the sixth step may be performed before the seventh step, for example, after the third step.
  • the diffusion layer 237 is arranged inside the frame member 235 so as to cover the light guide material 233.
  • the resin before solidification of the diffusion layer 237 is arranged inside the frame member 235 so as to have a concave shape with the central portion of the first region 17 at the bottom and to cover the light guide material 233.
  • the resin before solidification of the diffusion layer 237 is solidified, so that the diffusion layer 237 is formed.
  • the light emitting device 114 can efficiently emit the first light and the second light above the first region 17. ..
  • the thickness of the diffusion layer 237 is made thinner at the central portion of the first region 17 than at the outer edge of the first region 17, so that the distance between the light emitting device 114 and the LED chip 20 is reduced. It is possible to suppress the occurrence of uneven brightness between the central portion and the outer edge of the first region 17 due to the above.
  • the thickness of the diffusion layer 237 in the central portion of the first region 17 is reduced. , The occurrence of uneven brightness can be further suppressed.
  • the light emitting device 114 a part of the blue and yellow light emitted from the LED chip 20 and the fluorescent material 30 passes through the shielding member 236 and is emitted to the outside from the light emitting device 114 via the diffusion layer 237. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 236 and causing uneven brightness.
  • the transmittance of the shielding member 236 is preferably 30% or more and 70% or less, and although light is transmitted to some extent, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 114, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • FIG. 28A is a plan view of the light emitting device 115 according to the eighth embodiment
  • FIG. 28B is a cross-sectional view taken along the line CC shown in FIG. 28A.
  • the light emitting device 115 differs from the light emitting device 113 in that it has the light guide material 238 and a plurality of dot-shaped resins 239 instead of the light guide material 233 and the diffusion layer 234.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the light guide material 238 is different from the light guide material 233 in that the height of the surface is substantially uniform. Since the configuration and function of the light guide material 238 other than the uniform height of the surface are the same as the configuration and function of the light guide material 233, detailed description thereof will be omitted here.
  • the plurality of dot-shaped resins 239 are synthetic resins such as a silicone resin containing a filler formed of silicon dioxide or the like and a white resin such as titanium oxide, and are the surfaces of the light guide material 238. Placed in.
  • the plurality of dot-shaped resins 239 are arranged so that the arrangement pitch gradually widens from the central portion of the first region 17 toward the outer edge.
  • the manufacturing method of the light emitting device 115 is the same as the manufacturing method of the light emitting device 113 except that a plurality of dot-shaped resins 239 are arranged in place of the diffusion layer 234, and therefore detailed description thereof will be omitted here.
  • the light emitting device 115 is arranged so that the arrangement pitch of the plurality of dot-shaped resins 239 gradually increases from the central portion of the first region 17 toward the outer edge, it is possible to emit light having low luminance unevenness. ..
  • the method of arranging the plurality of dot-shaped resins 239 is not limited to the method shown by the light emitting device 115, and other arrangement methods may be used as long as the luminance unevenness can be reduced.
  • FIG. 29A is a plan view of the light emitting device 116 according to the ninth embodiment
  • FIG. 29B is a cross-sectional view taken along the line DD shown in FIG. 29A.
  • the light emitting device 116 is different from the light emitting device 113 in that it has the light guide material 240 instead of the light guide material 233 and does not have the diffusion layer 234.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the light guide material 240 is different from the light guide material 233 in that the surface is dimple-processed. Since the configuration and function of the light guide material 240 other than the surface being dimple-processed are the same as the configuration and function of the light guide material 233, detailed description thereof will be omitted here.
  • the depth of the dimples formed on the surface of the light guide material 240 is formed so as to gradually become shallower from the central portion of the first region 17 toward the outer edge.
  • the manufacturing method of the light emitting device 116 is the same as the manufacturing method of the light emitting device 113 except that the surface of the light guide material 233 is dimple-processed after the light guide material 233 is arranged, detailed description thereof is omitted here. do.
  • the dimple processing on the surface of the light guide material 233 is formed by, for example, laser processing the surface of the light guide material 233.
  • the surface of the light guide material 233 is dimple-processed so that the depth of the dimples gradually becomes shallower from the central portion of the first region 17 toward the outer edge.
  • the inside of the dimple-processed portion may be a cavity (air) or may be filled with a transparent resin or the like.
  • the dimple-processed portion By filling the inside of the dimple-processed portion with the projection resin layer, it is possible to prevent the dimple shape from being worn and the optical characteristics from being deteriorated. Further, since the refractive index of air and the transparent resin is lower than the refractive index of the light guide material 240, the dimple-processed portion also functions as a low refractive index layer.
  • the surface of the light guide material 240 is dimple-processed in the light emitting device 116, it is possible to suppress the occurrence of uneven luminance without arranging the diffusion layer 234.
  • the arrangement of the dimples and the height of each dimple may not be the arrangement and height shown in the light emitting device 116, but may be another arrangement method as long as the luminance unevenness can be reduced.
  • a mounting substrate 11 having a flat first region 17 is used, but the surface of the light guide material 240 is dimple-processed and the surface of the first region 17 is textured.
  • a substrate may be used.
  • FIG. 30A is a plan view of the light emitting device 117 according to the tenth embodiment
  • FIG. 30B is a cross-sectional view taken along the line EE shown in FIG. 30A.
  • the light emitting device 117 is different from the light emitting device 113 in that it has a protrusion 241.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the protrusion 241 is made of a material having high reflectance such as aluminum and has a conical shape.
  • the protrusion 241 has a top portion 242, an outer edge portion 243, and a side surface portion 244, and the top portion 242 is arranged so as to be located at the center of the first region 17.
  • the top portion 242 is the apex of the protrusion 241 and is located at the center when the reflective member is viewed in a plan view.
  • the outer edge portion 243 is arranged so as to be lower in height than the top portion 242 and surround the top portion 242.
  • the side surface portion 244 is arranged between the top portion 242 and the outer edge portion 243 and reflects the light emitted from the sealing material 231.
  • the protrusion 241 may be a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed.
  • the conical shape includes a substantially conical shape such as a shape in which the apex 242 is round, a shape in which the planar shape of the outer edge portion 243 is not a perfect circle but includes irregularities, and a shape in which the side surface 243 includes irregularities.
  • the manufacturing method of the light emitting device 117 is different from the manufacturing method of the light emitting device 113 in that the reflecting member arranging step for arranging the protrusions 241 is provided between the second step and the third step in the manufacturing process of the light emitting device 113. do.
  • the protrusion 241 is adhered to the central portion of the first region 17 by an adhesive.
  • the protrusion 241 is a synthetic resin such as a silicone resin in which reflective fine particles such as titanium oxide are dispersed
  • the protrusion 241 is solidified in the center of the first region 17 in the reflective member arranging step. It is glued to the part.
  • the protrusion 241 is arranged in the central portion of the first region 17, so that the brightness of the light emitted from the central portion of the first region 17 is improved, and the central portion and the outer edge of the first region 17 are improved. It is possible to suppress the occurrence of uneven brightness between the two.
  • the protrusion 241 of the light emitting device 117 has a conical shape, but may have a polygonal pyramid shape including a quadrangular pyramid shape.
  • the polygonal pyramid shape is a substantially polygonal pyramid shape such as a shape having a round apex, a shape including unevenness instead of a polygonal shape in which the planar shape of the outer edge is connected by a straight line, and a shape including unevenness on the side surface. including.
  • FIG. 31A is a plan view of the light emitting device 118 according to the eleventh embodiment
  • FIG. 31B is a cross-sectional view taken along the line FF shown in FIG. 31A.
  • the light emitting device 118 is different from the light emitting device 113 in that the substrate 250 is provided in place of the substrate 10.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the board 250 differs from the board 10 in that it has a mounting board 251 in place of the mounting board 11. Since the components and functions of the board 250 other than the mounting board 251 are the same as the components and functions of the board 10 to which the same reference numerals are given, detailed description thereof will be omitted here.
  • the mounting board 251 differs from the mounting board 11 in that it has a first region 257 instead of the first region 17. Since the configurations and functions of the components of the mounting board 251 other than the first region 257 are the same as the configurations and functions of the components of the mounting board 11 having the same reference numerals, detailed description thereof will be omitted here.
  • the first region 257 is different from the first region 17 in that it is textured.
  • the manufacturing method of the light emitting device 118 is the same as the manufacturing method of the light emitting device 113 except that the mounting substrate 251 in which the first region 257 is textured is used, detailed description thereof will be omitted here.
  • the graining of the first region 257 is formed by etching, for example, in a state where the region other than the light emitting region 57 of the mounting substrate 251 is masked.
  • the light emitted from the sealing material 231 and incident on the first region 257 is diffused in the first region 257 and emitted to the outside.
  • FIG. 32A is a plan view of the light emitting device 119 according to the twelfth embodiment
  • FIG. 32B is a cross-sectional view taken along the line GG shown in FIG. 32A.
  • the light emitting device 119 has the sealing material 260 in place of the sealing material 231 and has the first LED chip 261 and the second LED chip 262 and the third LED chip 263 in place of the LED chip 20. It's different.
  • the same components as those of the light emitting device 114 are designated by the same reference numerals, and the description thereof will be omitted.
  • the encapsulant 260 is different from the encapsulant 231 in that it does not contain the fluorescent material 30. Since the configuration and function of the encapsulant 260 other than not containing the fluorescent material 30 are the same as the configuration and function of the encapsulant 231, detailed description thereof will be omitted here.
  • the encapsulant 260 is arranged so as to cover each of the first LED chip 261 and the second LED chip 262 and the third LED chip 263.
  • the first LED chip 261 is a semiconductor element that emits blue light having a wavelength range of 440 nm to 455 nm, and the letter “B" is added in FIG. 32A.
  • the second LED chip 262 is a semiconductor element that emits green light and is formed of an InGaN-based compound semiconductor or the like having a wavelength range of emitted light of 505 nm to 555 nm, and is designated by the letter “G” in FIG. 32A.
  • the third LED chip 263 is a semiconductor element that emits red light and is formed of a GaAsP-based compound semiconductor or the like having a wavelength range of emitted light of 620 nm to 750 nm, and is designated by the letter “R” in FIG. 32A.
  • the light emitted by the first LED chip 261 is an example of the first light having the first wavelength
  • the light emitted by the second LED chip 262 is an example of the second light having the second wavelength
  • the light emitted by the third LED chip 263 is emitted.
  • the light to be emitted is an example of the third light having a third wavelength.
  • the manufacturing method of the light emitting device 119 is the same as the manufacturing method of the light emitting device 114 except that the first LED chip 261 and the second LED chip 262 and the third LED chip 263 are mounted instead of the LED chip 20, so detailed description thereof will be given here. Is omitted.
  • the first LED chip 261 and the second LED chip 262 and the third LED chip 263 are not arranged in the visible first region 17, the first LED chip 261 and the second LED chip 262 and the second LED chip 262 and the second LED chip 262 are not arranged even during low-luminance light emission. There is no possibility that the 3LED chip 263 is visually recognized as uneven brightness.
  • the mounting board 11 having the first region 17 which is a flat surface is used, but the mounting board in which the first region 17 is textured may be used. Further, in the light emitting device 119, both a mounting substrate on which the first region 17 is textured and a light guide material whose surface is dimple-processed may be used.
  • FIG. 33A is a plan view of the light emitting device 120 according to the thirteenth embodiment
  • FIG. 33B is a cross-sectional view taken along the line HH shown in FIG. 33A.
  • the light emitting device 120 differs from the light emitting device 114 in that the light emitting device 120 has the first sealing material 271, the second sealing material 272, and the third sealing material 273 instead of the sealing material 231.
  • the same components as those of the light emitting device 114 are designated by the same reference numerals, and the description thereof will be omitted.
  • the first encapsulant 271 is a synthetic resin such as a silicone resin containing a phosphor such as YAG that absorbs blue light and emits yellow light.
  • a synthetic resin such as a silicone resin containing a phosphor such as YAG that absorbs blue light and emits yellow light.
  • green light is emitted from the first sealing material 271 by mixing blue light and yellow light. Therefore, for convenience, in FIG. 33A, the letter “G" is attached to the LED chip 20 sealed by the first sealing material 271.
  • the second encapsulant 272 is a synthetic resin such as a silicone resin containing a phosphor such as CaAlSiN 3 that absorbs blue light and emits red light.
  • a synthetic resin such as a silicone resin containing a phosphor such as CaAlSiN 3 that absorbs blue light and emits red light.
  • red light is mainly emitted from the second sealing material 272. Therefore, for convenience, in FIG. 33A, the letter “R" is attached to the LED chip 20 sealed by the second sealing material 272.
  • the third encapsulant 273 is a synthetic resin such as a silicone resin that does not contain a phosphor, and is an LED chip 20 sealed by the first encapsulant 271 and the second encapsulant 272, and the first encapsulant.
  • the LED chip 20 that is not sealed by the 271 and the second sealing material 272 is sealed. Since the LED chip 20 sealed only by the third sealing material 273 emits blue light as it is, the letter "B" is added in FIG. 33A for convenience.
  • the method for manufacturing the light emitting device 120 is that the light emitting device 114 is manufactured except that the first sealing material 271 to the third sealing material 273 are arranged in place of the sealing material 231 in the fourth step of the manufacturing process of the light emitting device 114. Since it is the same as the manufacturing method, detailed description thereof will be omitted here.
  • FIG. 34A is a plan view of the light emitting device 121 according to the 14th embodiment
  • FIG. 34B is a cross-sectional view taken along the line II shown in FIG. 34A.
  • the LED chip 20 can be mounted in the first region 17 in addition to the second region 18 around the first region 17, and the sealing material 281 and the shielding member 282 can be newly added. It is different from the light emitting device 113.
  • the same components as those of the light emitting device 113 are designated by the same reference numerals, and the description thereof will be omitted.
  • the LED chip 20 is mounted in the first region 17 in addition to the second region 18.
  • Four LED chips 20 are mounted in the first region 17.
  • the sealing material 281 is arranged so as to cover the four LED chips 20 mounted on the first region 17.
  • the material of the sealing material 281 is the same as that of the sealing material 231 and contains the same fluorescent material 30 as the fluorescent material contained in the sealing material 231.
  • the shielding member 282 is arranged on the upper part of the light guide material 233 so as to cover the sealing material 281 that covers the four LED chips 20.
  • the material of the shielding member 282 is the same as that of the shielding member 236 used in the light emitting device 116 shown in FIG. 30, and it is preferable that the material has the same transmittance as that of the shielding member 236.
  • the portion indicated by the arrow H is a region inside the sealing material 281, and the light guide material 233 is also arranged at this portion.
  • the method for manufacturing the light emitting device 121 is to mount the LED chip 20 in the first region 17, arrange the sealing material 281 so as to cover the LED chip 20 mounted in the first region 17, and light guide material 231. Since the method is the same as that of the manufacturing method of the light emitting device 113 except that the reflective material 282 is arranged so as to cover the sealing material 281 after the curing of the above, detailed description thereof will be omitted here. It is preferable that the light guide material 233 arranged at the location indicated by the arrow H is solidified separately from the light guide material 233 arranged outside the sealing material 281.
  • the brightness of the central portion of the mounting region 17 can be made higher than that of the light emitting device 113. Further, in the light emitting device 121, since the shielding member 282 is arranged so as to cover the LED chip 20 mounted in the first region 17, the LED chip 20 arranged in the first region 17 is arranged even during low-luminance light emission. There is no risk of being visually recognized as uneven brightness. Further, in the light emitting device 121, the color of the fluorescent material contained in the sealing material 281 that seals the four LED chips 20 arranged in the first region 17 when the light is turned off is shielded by the shielding member 282, so that the outside is external. There is no possibility that the aesthetics will be deteriorated because it will not be visually recognized.
  • the LED chip 20 that emits the first color blue light is mounted, but the LED that emits the first color light instead of the LED chip 20 is mounted.
  • a chip and an LED chip that emits light of a second color different from the first color may be mounted.
  • the first region 17 has a substantially rectangular plane shape, but the first region may have a circular shape and a polygonal shape other than a rectangle (hexagon or the like).
  • the sealing material and the reflective material have a ring-shaped planar shape.
  • electric power is supplied to the light emitting element via a pair of electrodes, the anode electrode 13 and the cathode electrode 14, but power may be supplied to the light emitting element through two or more pairs of electrodes. ..
  • the reflective materials 32 and 232 are emitted from the blue light emitted from the LED chip 20 and the fluorescent material 30 contained in the sealing materials 31 and 231. It hardly transmits the yellow light. However, as long as the color of the fluorescent material is not visible from the outside, a reflective material that transmits a part of light may be used.
  • the surface of the diffusion layer 234 has a substantially uniform height over the entire surface, but a recess or a recess such that the central portion of the first region 17 is low and the peripheral portion is high. , It may be a spherical concave portion.
  • FIG. 35A is a plan view of the light emitting device 122 according to the fifteenth embodiment
  • FIG. 35B is a cross-sectional view taken along the line AA shown in FIG. 35A.
  • the LED chips 20 of the first group (12 pieces) are arranged in a circle in the second region 18 in the second region 18 closer to the outer edge portion of the light guide material 333 as compared with the light emitting device 114, and the first group.
  • the major difference is that the second group (12 pieces) of the LED chips 20 are arranged in a circle inside the LED chips 20 of the above.
  • the same reference numerals are given to the same configurations as those of the light emitting device 114, and the description thereof will be omitted.
  • the first anode wiring 317 electrically connected to the first anode electrode 313, the second anode wiring 318 electrically connected to the second anode electrode 314, and the first cathode electrode 315.
  • the first cathode wiring 319, the second cathode electrode 316, and the second cathode wiring 320 electrically connected to the second cathode electrode 316 are formed on the surface of the circuit board 312 by a conductive thin film such as copper.
  • the LED chip 20 of the first group is connected in series between the first anode wiring 317 and the first cathode wiring 319, and the LED chip 20 of the second group is connected in series between the second anode wiring 318 and the second cathode wiring 320.
  • the LED chip 20 of the first group is sealed by the first sealing material 331, and the LED chip 20 of the second group is sealed by the second sealing material 332.
  • the first encapsulant 331 is the same encapsulant as the second encapsulant 82 described in the above-mentioned light emitting device 110, and as a result, warm white light having a color temperature of 2700 K is emitted from the first encapsulant 331. It is emitted.
  • the second encapsulant 332 is the same encapsulant as the first encapsulant 81 described in the above-mentioned light emitting device 110, and as a result, the second encapsulant 332 is a cold white color having a color temperature of 6500 K. Light is emitted.
  • the light emitting device 122 has a light guide material 333, a frame member 335, a shielding member 336, and a diffusion layer 337, similarly to the light emitting device 114.
  • the materials and functions of the light guide material 333, the frame member 335, the shielding member 336, and the diffusion layer 337 in the light emitting device 122 are the light guide material 233, the frame member 235, the shielding member 236, and the diffusion layer shown in the light emitting device 114. Since it is the same as that of layer 227 (only the shape is different), the description thereof will be omitted.
  • the frame member 335 and the shielding member 336 serve as the reflective material 232 of the light emitting device 113. That is, the frame member 335 and the shielding member 336 are arranged on the upper side of the first sealing material 331 and the second sealing material 332 and on the side opposite to the first region 17, and the first sealing material 331 and the second sealing material 331. The light emitted from the stop member 332 is reflected, and the reflected light is guided to the light guide material 333 side).
  • the light emitting device 122 a part of the light emitted from the first sealing material 331 and the second sealing material 332 passes through the shielding member 336 and is emitted to the outside from the light emitting device 122 via the diffusion layer 337. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 336 and causing uneven brightness.
  • the transmittance of the shielding member 336 is preferably 30% or more and 70% or less, and although light is transmitted to some extent, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 122, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the first sealing material 331 that emits warm white light is arranged outside the second sealing material 332 that emits cold white light, and the first sealing material 331 is arranged. Suppresses the absorption of the light emitted from the second encapsulant 332 and the secondary absorption of the light, so that the efficiency of the entire apparatus is improved.
  • FIG. 36A is a plan view of the light emitting device 123 according to the 16th embodiment
  • FIG. 36B is a cross-sectional view taken along the line BB shown in FIG. 36A.
  • the light emitting device 123 is significantly different from the light emitting device 122 in that the method of sealing the LED chip 20 of the first group and the LED chip 20 of the second group with a sealing material is different. Further, in the light emitting device 123, the same reference numerals are given to the same configurations as those of the light emitting device 122, and the description thereof will be omitted.
  • the LED chips 20 of the first group (12 pieces) are arranged in a circle in the second region 18 in the vicinity of the outer edge portion of the light guide material 333, and the LED chips 20 of the first group are arranged inside the LED chips 20 of the first group.
  • Two groups (12) of LED chips 20 are arranged in a circle, and this point is the same as that of the light emitting device 122.
  • the LED chip 20 of the first group and the entire LED chip 20 of the second group are sealed by the second encapsulant 342, and the first encapsulant 341 is arranged only on the upper surface of the LED chip 20 of the first group. The point that is done is different.
  • the first sealing material 341 is the same sealing material as the second sealing material 82 described in the above-mentioned light emitting device 110, and as a result, the color temperature of the first sealing material 341 is 2700 K. Warm white light is emitted.
  • the second encapsulant 342 is the same encapsulant as the first encapsulant 81 described in the above-mentioned light emitting device 110, and cold white light having a color temperature of 6500 K is emitted from the second encapsulant 342. Will be done.
  • “W” is attached to the portion where the first sealing material 341 is arranged for convenience.
  • the frame member 335 and the shielding member 336 are arranged on the upper side of the first sealing material 341 and the second sealing material 342 and on the side opposite to the first region 17, and the first sealing material 341 and the first sealing material 341 and the shielding member 336 are arranged.
  • the light emitted from the second sealing material 342 is reflected, and the reflected light is guided to the light guide material 333 side.
  • the light emitting device 123 a part of the light emitted from the first sealing material 341 and the second sealing material 342 passes through the shielding member 336 and is emitted to the outside from the light emitting device 123 via the diffusion layer 337. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 336 and causing uneven brightness.
  • the transmittance of the shielding member 336 is preferably 30% or more and 70% or less, and although light is transmitted to some extent, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 123, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the LED chips 20 of the first group and the LED chips 20 of the second group can be alternately arranged close to the outer edge portion of the light guide material 333, so that warm white light and cold colors can be arranged alternately. It is possible to improve the color mixing property with the white light of the system.
  • FIG. 37A is a plan view of the light emitting device 124 according to the 17th embodiment
  • FIG. 37B is a cross-sectional view taken along the line CC shown in FIG. 37A.
  • the light emitting device 124 differs from the light emitting device 114 in that the frame member 350 is provided in place of the frame member 235 and the shielding member 236, and the diffusion layer 251 is provided in place of the diffusion layer 237.
  • the same components as those of the light emitting device 114 are designated by the same reference numerals, and the description thereof will be omitted.
  • the frame member 350 is individually manufactured as a molded product from a material capable of reflecting the light emitted from the sealing material 231, has a hardness of pencil hardness B or higher, and is not shown. It is adhered to the substrate 10 with a material.
  • the diffusion layer 351 is made of the same material as the diffusion layer 237 of the light emitting device 114.
  • the frame member 350 is arranged so as to cover the upper side of the sealing material 231 and the side opposite to the first region 17, and reflects the light emitted from the sealing material 231 to reflect the reflected light. It leads to the light guide material 233 side.
  • the frame member 350 of the molded product is adhered to the substrate, and the frame member 350 and the light guide are guided. It is completed by forming a diffusion layer 351 with the material 233.
  • the light emitting device 124 can efficiently emit the first light and the second light above the first region 17. ..
  • the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the light emitting device 124 uses the frame member 350 of the molded product, it is possible to provide a flat portion on the upper portion of the frame resin 350, and the flat portion can be used to connect with an optical component or the like. It has the advantage of easy connection and / or positioning. Further, since the light emitting device 124 uses the frame member 350 of the molded product, it is robust as a device, and even if the user touches the upper part, the wire 21 or the like connecting the LED chip 20 is disconnected. The fear is low.
  • FIG. 38A is a plan view of the light emitting device 125 according to the eighteenth embodiment
  • FIG. 38B is a cross-sectional view taken along the line DD shown in FIG. 38A.
  • the light emitting device 125 is different from the light emitting device 114 in that the ⁇ LED chip 360 is arranged in the first region 17.
  • the same components as those of the light emitting device 114 are designated by the same reference numerals, and the description thereof will be omitted.
  • the ⁇ LED chip 360 is a semiconductor element similar to the LED chip 20, but the vertical and horizontal external dimensions of the LED chip 20 are about 650 ⁇ m ⁇ 650 ⁇ m, whereas the vertical and horizontal external dimensions are very small, about 50 ⁇ m ⁇ 50 ⁇ m. ..
  • each ⁇ LED chip 360 is connected to the anode wiring 15 and the cathode wiring 16 by a wire 21.
  • FIG. 38A is not limited to the nine ⁇ LED chips 360, and can be arranged in a place where luminance unevenness is likely to occur and used for luminance unevenness correction.
  • the color emitted by the ⁇ LED chip 360 is not limited to blue light, and ⁇ LED chips having various emission colors can be used.
  • the method for manufacturing the light emitting device 125 may be the same as the process for manufacturing the light emitting device 113, in which the ⁇ LED chip 360 may be arranged at the same timing as the LED chip 20 and connected by a wire.
  • the fluorescent material is not required for the light emission of the ⁇ LED chip 360 itself, the color of the fluorescent material is not visually recognized from the outside when the light emitting device 114 is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • FIG. 39A is a plan view of the light emitting device 126 according to the nineteenth embodiment
  • FIG. 39B is a cross-sectional view taken along the line EE shown in FIG. 39A.
  • the light emitting device 126 is significantly different from the light emitting device 124 in that the substrate 410 has a long and thin rectangular shape and the LED chips are arranged in a line along the longitudinal direction of the substrate 410. Further, in the light emitting device 126, the same reference numerals are given to the same configurations as those of the light emitting device 114, and the description thereof will be omitted.
  • a plurality of LED chips 20 are arranged in a line in the second region 18 in the vicinity of the outer edge portion along the longitudinal direction of the light guide material 433.
  • the LED chips 20 arranged in a plurality of lines are connected in series between the anode wiring 415 electrically connected to the anode electrode 413 and the cathode wiring 416 electrically connected to the cathode electrode 414.
  • the light emitting device 126 has a sealing material 431, a light guide material 433, a frame member 435, a shielding member 436, and a diffusion layer 437.
  • the materials and functions of the sealing material 431, the light guide material 433, the frame member 435, the shielding member 436, and the diffusion layer 437 in the light emitting device 126 are the sealing material 231, the light guide material 233, and the frame shown in the light emitting device 114. Since it is the same as the member 235, the shielding member 236, and the diffusion layer 237 (only the shape is different), the description thereof will be omitted.
  • the frame member 435 and the shielding member 436 are arranged on the upper side of the sealing material 431 and on the side opposite to the first region 17, and reflect the light emitted from the sealing material 431 to reflect the reflected light. Is guided to the light guide material 433 side.
  • the light emitting device 126 a part of the light emitted from the sealing material 431 passes through the shielding member 436 and is emitted to the outside from the light emitting device 126 via the diffusion layer 437, so that it is above the shielding member 436. It is possible to prevent the occurrence of dark areas and uneven brightness.
  • the transmittance of the shielding member 436 is preferably 30% or more and 70% or less, and although light is transmitted to some extent, the color of the fluorescent material cannot be visually recognized from the outside. Therefore, in the light emitting device 126, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance is deteriorated.
  • the manufacturing method of the light emitting device 126 is the same as the manufacturing process of the light emitting device 114 except that the shape of the substrate 410 is different, detailed description thereof will be omitted.
  • FIG. 40A is a plan view showing an example of the top light emitting SMD150
  • FIG. 40B is a right side view of FIG. 40A
  • FIG. 40C is a back view of FIG. 40A.
  • the top light emitting SMD 150 is an example of an LED package, and can be used in place of the LED chip 20 in the above-mentioned light emitting devices 100 to 126.
  • the anode wiring 515 and the cathode wiring 516 arranged on the substrate 510 and the LED chip 20 are connected by a wire 21.
  • the anode wiring 515 is electrically connected to the anode electrode 513 arranged on the back surface of the substrate 510 by the via 517.
  • the cathode wiring 516 is electrically connected to the cathode electrode 514 arranged on the back surface of the substrate 510 by the via 518.
  • a frame member 535 is arranged on the upper surface of the substrate 510, and a sealing material 531 is arranged inside the frame member 535 so as to seal the LED chip 20 and the wire 21.
  • the sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114.
  • the top surface emitting SMD 150 is connected to, for example, the anode wiring 15 and the cathode wiring 16 of the light emitting device 114 by the anode electrode 513 and the cathode electrode 514 on the back surface (see FIG. 40C), and a predetermined current is supplied to the top surface side. (See FIG. 40A) emits light having a predetermined wavelength.
  • the external dimensions of the top light emitting SMD 150 in length, width, and height are, for example, 1.5 x 1.5 x 0.5 mm, but the size is not limited to this.
  • FIG. 41A is a plan view showing an example of the side light emitting SMD 151
  • FIG. 41B is a right side view of FIG. 41A
  • FIG. 41C is a back view of FIG. 41A.
  • the side light emitting SMD 151 is an example of an LED package, and can be used in place of the LED chip 20 in the above-mentioned light emitting devices 100 to 126.
  • the same number is given to the same configuration as the top light emitting SMD 150, and the description thereof will be omitted.
  • the anode wiring 515 and the cathode wiring 516 arranged on the substrate 510 and the LED chip 20 are connected by a wire 21.
  • the anode wiring 515 is electrically connected to the anode electrode 523 arranged on the back surface of the substrate 510 by the via 517.
  • the cathode wiring 516 is electrically connected to the cathode electrode 524 arranged on the back surface of the substrate 510 by the via 518.
  • a frame member 535 is arranged on the upper surface of the substrate 510, and a sealing material 531 is arranged inside the frame member 535 so as to seal the LED chip 20 and the wire 21.
  • the sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114.
  • the side light emitting SMD 151 is provided on the side surface side (arrow F side in FIG. 41B) by the anode electrode 523 and the cathode electrode 524 extending from the back surface (see FIG. 41C) to the side surface side, for example, the anode wiring 15 and the cathode of the light emitting device 114.
  • the wiring 16 When connected to the wiring 16 and supplied with a predetermined current, light having a predetermined wavelength is emitted from the upper surface side (see FIG. 41A).
  • the external dimensions of the side light emitting SMD 151 in length, width, and height are, for example, 0.8 ⁇ 1.5 ⁇ 0.8 mm, but the size is not limited to this.
  • FIG. 42 is a diagram showing an example in which the light emitting device 113 is applied to the lighting device 600.
  • the lighting device 600 has a light emitting device 113 and a lens 601.
  • the lens 601 is an axially symmetric bowl-shaped collimator lens, and the light emitting device 100 is arranged so that the light emitting region of the light emitting device 100 is located in the recess 602.
  • the reflective surface 603, which is the outer surface of the lens 601 has a rotating body shape in which a parabola is rotated.
  • the lens 601 reflects the light emitted from the light emitting device 100 on the reflecting surface 603 and emits the light from the emitting surface 604.
  • the other light emitting devices 101 to 112 and 114 to 126 can also be applied to the lighting device 600.
  • FIG. 43A shows an example when the light emitting device 700 according to the comparative example is used for the lighting device 600
  • FIG. 43B shows an example when the light emitting device 100 is used for the lighting device 600.
  • Both FIGS. 43A and 43B assume a case where the user looks into the lighting device 600 from the exit surface 604 side.
  • the light emitting device 700 according to the comparative example is a device in which the sealing material 231 including the LED chip 20 and the fluorescent material 30 is arranged in the first region 17 in place of the light guide material 233 in the light emitting device 113. And. Therefore, the light emitting device 700 is configured so that the color of the fluorescent material can be visually recognized from above when the light is turned off.
  • the color of the sealing material containing the fluorescent material existing in the first region of the light emitting device 700 is applied to the reflective surface 603 of the lens 601 of the lighting device 600. It is reflected and the color of the phosphor is visually recognized over the entire surface of the lens 601 and the aesthetic appearance is deteriorated.
  • the reflective material 232 is arranged so that the sealing material containing the fluorescent material is not visible from above, so that the light emitting device 113 is illuminated even while the light emitting device 113 is turned off.
  • the color of the phosphor is not visible over the entire surface of the lens 601 of the apparatus 600.
  • the light emitting device 113 since the light emitting device 113 according to the embodiment has a large area, when the lens 601 is mounted on the light emitting device 113 to manufacture the lighting device 600, lateral displacement occurs between the light emitting device 113 and the lens 601. However, there is a low possibility that the brightness will decrease.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Led Device Packages (AREA)

Abstract

Le but de la présente invention est de fournir un dispositif électroluminescent peu susceptible de provoquer une irrégularité de luminance. Le dispositif électroluminescent selon l'invention comprend : un substrat ayant une première région et une seconde région disposée dans l'environnement de la première région ; une pluralité d'éléments électroluminescents montés sur le substrat dans la seconde région ; un matériau d'étanchéité disposé sur le substrat de manière à recouvrir la pluralité d'éléments électroluminescents ; un matériau réfléchissant disposé sur un côté supérieur du matériau d'étanchéité et le côté opposé de la première région ; et un matériau de guidage de lumière qui a une surface supérieure et est disposé dans la première région faisant face à une surface latérale côté première région du matériau d'étanchéité.
PCT/JP2021/024013 2020-06-25 2021-06-24 Dispositif électroluminescent WO2021261567A1 (fr)

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JP2013178946A (ja) * 2012-02-28 2013-09-09 Panasonic Corp 照明器具
JP2018120959A (ja) * 2017-01-25 2018-08-02 パナソニックＩｐマネジメント株式会社 発光装置及び照明装置
JP2020027814A (ja) * 2018-08-09 2020-02-20 シチズン時計株式会社 Ｌｅｄ発光装置
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JP5776599B2 (ja) * 2012-03-26 2015-09-09 東芝ライテック株式会社 発光モジュール及び照明装置
DE112016002425B4 (de) 2015-05-29 2022-03-03 Citizen Electronics Co., Ltd. Herstellungsverfahren für eine Licht emittierende Vorrichtung
JP7072368B2 (ja) 2017-11-06 2022-05-20 シチズン電子株式会社 側面照射型ｌｅｄ発光装置
JP2020021640A (ja) 2018-08-01 2020-02-06 ミネベアミツミ株式会社 面状照明装置
JP2021082655A (ja) 2019-11-15 2021-05-27 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7492119B2 (ja) * 2020-03-31 2024-05-29 日亜化学工業株式会社 発光装置

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JPH03261988A (ja) * 1990-03-12 1991-11-21 Sumitomo Chem Co Ltd 面状発光体
JP2010277851A (ja) * 2009-05-28 2010-12-09 Seiko Instruments Inc 照明装置及びこれを用いた表示装置
JP2013178946A (ja) * 2012-02-28 2013-09-09 Panasonic Corp 照明器具
JP2018120959A (ja) * 2017-01-25 2018-08-02 パナソニックＩｐマネジメント株式会社 発光装置及び照明装置
JP2020027814A (ja) * 2018-08-09 2020-02-20 シチズン時計株式会社 Ｌｅｄ発光装置
JP2020088051A (ja) * 2018-11-20 2020-06-04 シチズン電子株式会社 発光装置

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WO2023181639A1 (fr) * 2022-03-25 2023-09-28 ソニーセミコンダクタソリューションズ株式会社 Dispositif électroluminescent et dispositif de mesure de distance

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