WO2021246328A1 - Procédé de fonctionnement pour dispositif de traitement de substrat - Google Patents

Procédé de fonctionnement pour dispositif de traitement de substrat Download PDF

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Publication number
WO2021246328A1
WO2021246328A1 PCT/JP2021/020440 JP2021020440W WO2021246328A1 WO 2021246328 A1 WO2021246328 A1 WO 2021246328A1 JP 2021020440 W JP2021020440 W JP 2021020440W WO 2021246328 A1 WO2021246328 A1 WO 2021246328A1
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WIPO (PCT)
Prior art keywords
inspection
wafer
doctor
processing
substrate
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PCT/JP2021/020440
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English (en)
Japanese (ja)
Inventor
水根 李
Original Assignee
東京エレクトロン株式会社
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Priority to JP2022528800A priority Critical patent/JP7455972B2/ja
Publication of WO2021246328A1 publication Critical patent/WO2021246328A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • This disclosure relates to an operation method of a substrate processing apparatus.
  • Patent Document 1 discloses, as a substrate processing system, a coating and developing apparatus for applying a resist to a substrate and developing after exposure.
  • a substrate for temperature monitoring called a wireless wafer is used.
  • the wireless wafer has a plurality of temperature sensors and controllers, and can transmit the temperature detected by the temperature sensors by wireless communication.
  • the time course of the actual temperature of the wireless wafer is measured when the wireless wafer is placed on the heating plate and when the wireless wafer is transferred to the heating plate before and after the heating plate.
  • the control parameters of the heating plate can be adjusted appropriately based on the measurement results.
  • the present disclosure provides an operation method of a substrate processing apparatus capable of easily and quickly identifying the cause of generation of pollutants such as particles by using an inspection substrate.
  • the product is between the processing unit that processes the product substrate, the loading / unloading section where the product substrate processed by the processing unit is loaded / unloaded, and the loading / unloading section and the processing unit.
  • a method of operating a substrate processing apparatus including a transport mechanism for transporting a substrate, wherein a plate-shaped base material, an image pickup element provided on at least a part of the surface of the base material, and the image pickup element are provided.
  • An inspection board including a light-transmitting protective layer formed on the surface and an output unit that outputs the output of the image pickup element to the outside of the inspection board, and the light emitted from the light source is the protective layer.
  • a step of preparing the inspection board configured to be able to detect the adhered state of the contaminated substance to the protective layer based on the output of the image pickup element that changes by being blocked by the contaminated substance adhering to the top.
  • the inspection board is processed by the processing unit, and the state of contaminants adhering to the inspection board is detected by the inspection board after or during the processing, and the inspection board is conveyed by the transfer mechanism.
  • the present invention provides an operation method including a determination step for determining whether or not to process or transport a product substrate by the substrate processing apparatus based on the state of.
  • the cause of generation of pollutants such as particles can be easily and quickly identified by using an inspection board.
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to this embodiment.
  • the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.
  • the board processing system 1 includes an loading / unloading station 2 and a processing station 3.
  • the loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12.
  • a plurality of substrates, and in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state are mounted on the carrier mounting portion 11.
  • the transport section 12 is provided adjacent to the carrier mounting section 11, and includes a substrate transport device 13 (transport mechanism) and a delivery section 14 inside.
  • the substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W (board). Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. conduct.
  • the processing station 3 is provided adjacent to the transport unit 12.
  • the processing station 3 includes a transport unit 15 and a plurality of processing units 16.
  • the plurality of processing units 16 are provided side by side on both sides of the transport unit 15.
  • the transport unit 15 is provided with a substrate transport device 17 (transport mechanism) inside.
  • the substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 by using the wafer holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate transfer device 17.
  • the substrate processing system 1 includes a notch aligner 90 that aligns the wafer in the circumferential direction, that is, a positioning device.
  • the notch aligner 90 can be provided, for example, in the transport section 12 of the carry-in / out station 2 (for example, in the transport space of the substrate transport device 13 or in the delivery section 14).
  • a positioning device instead of the notch aligner 90, a device that positions the wafer by detecting the orientation flat may be used.
  • the substrate processing system 1 may include a doctor wafer storage unit 92 for storing a doctor wafer (inspection substrate) DW, which will be described later.
  • the doctor wafer storage unit 92 can be provided at an arbitrary position in the substrate processing system 1 if the substrate transfer device 13 or the substrate transfer device 17 is accessible.
  • the board processing system 1 includes a control device 4.
  • the control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19.
  • the storage unit 19 stores programs that control various processes executed in the board processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
  • the program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 19 of the control device 4.
  • Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C mounted on the carrier mounting portion 11 and receives the taken out wafer W. Placed on Watanabe 14. The wafer W placed on the delivery section 14 is taken out from the delivery section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
  • the wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W mounted on the delivery section 14 is returned to the carrier C of the carrier mounting section 11 by the substrate transfer device 13.
  • the following doctor wafer DW inspection substrate is conveyed and processed in the substrate processing system 1.
  • the doctor wafer DW can widely detect contaminants other than particles, such as water marks, or surface defects such as scratches.
  • particles will be described as an example as the most typical detection target.
  • FIG. 2 shows an example of the configuration of the doctor wafer DW.
  • the doctor wafer DW includes a wiring layer 102, a light receiving layer 104, and a protective layer 106 sequentially laminated on a substrate 100 (disk-shaped base material) made of a semiconductor wafer.
  • the wiring layer 102 and the light receiving layer 104 can be formed by using a well-known image pickup element (for example, back-illuminated CMOS) forming technique. It can be said that the doctor wafer DW is an image pickup device having the same size as the wafer W.
  • the wiring layer 102 and the light receiving layer 104 may be configured to correspond to a CCD image pickup device.
  • the light receiving layer 104 has a large number (s) of photodiodes arranged in a matrix. Since it is not necessary to distinguish colors in the doctor wafer DW, a color filter is not provided on the photodiode. Therefore, the light receiving layer 104 of the doctor wafer DW has a detection resolution that corresponds exactly to the number of photodiodes (number of pixels).
  • One photodiode is hereinafter referred to as pixel 105. In a non-limiting and exemplary embodiment, the size of one pixel 105 is 5 nm.
  • the protective layer 106 has sufficient light transmission, is not easily attacked by the processing fluid to which the doctor wafer DW is exposed, and has surface characteristics (for example, hydrophobicity) similar to those of the wafer W (product wafer). It is preferably formed from a material.
  • the protective layer 106 is formed of a pixel protective damper 106a provided on the light receiving layer 104 and transparent glass (SiOx) 106b.
  • the surface properties (eg, hydrophobicity) of the transparent glass are similar to those of the wafer W.
  • the material constituting the protective layer 106 (particularly its surface) can be changed according to the processing fluid to which the doctor wafer DW is exposed.
  • a light-transmitting coating having desired characteristics for example, a transparent PFA or PTFA thin film
  • a light-transmitting coating may be provided on the outermost surface of the protective layer 106.
  • SiN, SiOx or the like can be used when acid resistance is desired
  • SiOx or the like can be used when alkali resistance is desired
  • SiOx or the like can be used when oil resistance is desired.
  • a plurality of electrodes 108 are provided on the peripheral edge of the doctor wafer DW.
  • the electrode 108 has a function as a power receiving electrode for receiving power for operating the image pickup element (102 + 104), and receives a command signal from an external device (for example, a signal processing device) instructing the image pickup element to read pixel data. It has a function as an input electrode and a function as an output electrode for outputting the pixel data output from the doctor wafer DW to an external device (for example, a signal processing device).
  • Electrode 108 Electrode member 108
  • a different function may be assigned to each electrode 108 (electrode member).
  • the supply electrode to the pixel amplifier is exemplified.
  • the electrode 108 is electrically in contact with various components with which the wafer W is in contact in the substrate processing system 1, such as a gripping claw of a mechanical spin chuck (described later), a holding claw of a transport arm, and the like (described later). It is installed in a position where it can be used.
  • the electrode 108 can be provided, for example, so as to be exposed on the surface (side peripheral surface) of Apex of the doctor wafer DW, the bevel portion or a flat portion in the vicinity thereof.
  • the electrode 108 is electrically connected to the wiring layer 102. It is assumed that the gripping claw of the mechanical spin chuck is arranged at a position where it comes into contact with the black-painted electrode 108 of FIG. It is assumed that the holding claw of the transport arm is not always arranged at a position where it comes into contact with the black-painted electrode 108, but is arranged at a position where it comes into contact with, for example, the white electrode 108. In this case, a connection line 110 for connecting electrodes 108 (for example, electrodes that transmit and receive power, command signals, and pixel data (image signals) to and from a specific area of the doctor wafer DW) having the same role is provided. be able to.
  • the illumination light radiated to the doctor wafer DW is blocked by the particles. That is, the output of the pixel 105 below the particles is reduced. Utilizing this, the distribution of particles on the doctor wafer DW can be detected.
  • lighting devices can be provided at various locations in the substrate processing system 1.
  • the place where the lighting device is provided is arbitrary, but it is particularly preferable to provide the lighting device in a place where particles are likely to be generated. Examples of places where particles are likely to be generated include the inside of the processing unit 16 and the vicinity of the delivery portion 14 where the wafer W is delivered.
  • the processing unit 16 includes a chamber 20, a spin chuck (substrate holding mechanism) 30, a processing fluid supply unit 40, and a recovery cup 50.
  • the chamber 20 accommodates the spin chuck 30, the processing fluid supply unit 40, and the recovery cup 50.
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20.
  • the FFU 21 forms a downflow in the chamber 20.
  • the spin chuck 30 is configured as a mechanical chuck.
  • the spin chuck 30 has a substrate holding portion 31.
  • the substrate holding portion 31 has a disk-shaped support plate 32 and a plurality of gripping claws 33 provided on the peripheral edge portion of the support plate 32, preferably at equal intervals in the circumferential direction. At least one or more of the gripping claws 33 are movable gripping claws.
  • the spin chuck 30 holds the wafer W in a horizontal posture by engaging the grip claw 33 with the peripheral edge of the wafer W.
  • the support plate 32 is rotationally driven by an electric motor (driving unit) 34, whereby the wafer W is rotationally driven around the vertical axis.
  • the gripping claw 33 is provided with an electrode 35 that can be electrically contacted with the electrode 108 of the doctor wafer DW.
  • the notch N of the doctor wafer DW (see FIG. 3) has a predetermined positional relationship with the electrode 108 of the doctor wafer DW. Since the doctor wafer DW is positioned in the circumferential direction by the notch aligner 90, each electrode 108 of the doctor wafer DW always comes into contact with the predetermined electrode 35 of the gripping claw 33 when held by the spin chuck 30.
  • the electrode 35 has a power supply 36 that supplies power necessary for operating the doctor wafer DW (for example, power for operating a pixel amplifier), an output of a command signal instructing the doctor wafer DW to read pixel data, and output of a command signal.
  • a signal processing device (transmission / reception unit and calculation unit) 37 that processes the pixel data signal output from the doctor wafer DW is connected to the signal processing device (transmission / reception unit and calculation unit) 37.
  • the processing fluid supply unit 40 has one or more nozzles 41 for discharging the processing fluid.
  • the nozzle 41 is supported on the tip of a nozzle arm 42 that can be swiveled around the vertical axis, and moves at least between a position directly above the center of the wafer W and a position directly above the peripheral edge of the wafer W. can do.
  • a processing fluid supply mechanism 43 that supplies a processing fluid (processing liquid, processing gas) to the nozzle 41 is connected to each nozzle 41.
  • a plurality of types of processing fluids may be supplied from each nozzle 41, and in this case, a plurality of processing fluid supply mechanisms 43 are connected to one nozzle 41.
  • the number of nozzles 41 and the number of nozzle arms 42 provided in one processing unit 16 are arbitrary.
  • the substrate holding portion 31 of the spin chuck 30 is surrounded by the recovery cup 50.
  • the recovery cup 50 collects the processing liquid scattered from the wafer W.
  • a drainage port 51 and an exhaust port 52 are formed at the bottom of the recovery cup 50.
  • the treatment liquid is discharged to the outside of the recovery cup 50 from the drain port 51.
  • the exhaust port 52 is always sucked during the normal operation of the processing unit 16, whereby the atmosphere in the space above the wafer W (for example, the clean air supplied from the FFU 21 into the chamber 20) is sucked into the recovery cup 50. To. Due to the air flow generated by this, the treatment liquid scattered from the wafer W is suppressed from reattaching to the wafer W.
  • a lighting device 45 is provided on the lower surface of the nozzle arm 42.
  • the illuminating device 45 may continuously (seamlessly) irradiate the section from the central portion to the peripheral portion of the surface of the wafer W.
  • the lighting device 45 is arranged on the nozzle arm 42 so as to be able to do so.
  • the lighting device 45 is turned on when the nozzle 41 is located directly above the center of the doctor wafer DW, the surface of the doctor wafer DW has a linear or linear shape extending continuously from the center to the periphery in the radial direction. An elongated strip-shaped irradiation section is formed.
  • FIG. 5 shows a modified example of the processing unit 16.
  • the lighting device 46 is provided at the place where the FFU 21 was provided in the example of FIG.
  • the illuminating device 46 can be composed of a disk-shaped member having a diameter larger than the diameter of the wafer W.
  • the lighting device 46 can be configured to include a light emitting unit 46a and a polarizing filter 46b made of graphene or the like.
  • the surface of the wafer W can be irradiated with parallel light (light traveling only in a direction substantially orthogonal to the surface of the wafer W), and the wafer W is irradiated with light from a relatively distant position. Nevertheless, the particle inspection accuracy can be improved.
  • FIG. 4 may be the same as that of the lighting device 46.
  • a side flow type FFU 21 outlet can be provided on the side wall of the chamber 20.
  • the configuration of the processing unit 16 of FIG. 5 may be the same as that of the processing unit of FIG.
  • the substrate transfer device 17 has a moving base 171 that can translate in the X direction (horizontal direction) and the Z direction (vertical direction) and can rotate around the vertical axis.
  • a fork 172 (board holder) that can move forward and backward in the horizontal direction is provided on the moving base 171.
  • FIG. 6 shows the fork 172 in the retracted position.
  • the fork 172 is located at a forward position when the wafer W is delivered to and from the wafer holding structure such as the spin chuck 30 of the processing unit 16 and the stage of the delivery section 14, and the wafer W is placed in the wafer holding structure described above. It is located in the retracted position when transporting between.
  • the fork 172 is provided with a plurality of holding claws 173, and at least one of them is movable. By moving the movable holding claw 173, the fork 172 can hold and release the wafer W (doctor wafer DW).
  • the holding claw 173 is provided with an electrode 175 that can be electrically contacted with the electrode 108 of the doctor wafer DW. Each electrode 108 of the properly positioned doctor wafer DW always comes into contact with the predetermined electrode 175 of the holding claw 173 when held by the fork 172.
  • the electrode 175 has a power supply 177 that supplies power necessary for operating the doctor wafer DW, an output of a command signal instructing the doctor wafer DW to read pixel data, and pixel data (image) output from the doctor wafer DW.
  • a signal processing device 179 (or the signal processing device 37 described above) that processes the signal) is connected to the signal processing device 179 (or the signal processing device 37 described above).
  • the moving base 171 is provided with a lighting device 174.
  • the lighting device 174 is provided so as to be able to irradiate the entire surface of the doctor wafer DW held by the fork 172 located at the retracted position with light.
  • the configuration of the lighting device 174 may be the same as that of the lighting devices 45 and 46 provided in the processing unit 16.
  • the lighting device 174 may be in the shape of a strip extending in a direction orthogonal to the direction in which the fork 172 moves forward and backward (the length thereof is preferably equal to or larger than the diameter of the doctor wafer DW). In this case, it is sufficient that the entire area of the doctor wafer DW crosses the strip-shaped irradiation region of the lighting device 174 as the fork 172 moves forward and backward.
  • one of the side walls of the chamber 20 of the processing unit 16 is provided with a wafer loading / unloading port 22 with a shutter (the same applies to the configuration of FIG. 4, but the figure is also shown in FIG. 4 is not shown).
  • a strip-shaped lighting device 47 having a length equal to or larger than the diameter of the wafer W may be provided on the ceiling of the wafer loading / unloading port 22.
  • the doctor wafer DW can be inspected when the fork 172 holding the doctor wafer DW passes below the lighting device 47.
  • Units / devices other than the processing unit 16 shown in FIGS. 4 and 5 and the substrate transfer device 17 shown in FIG. 6 can also be electrically contacted with the electrode 108 of the doctor wafer DW, and such.
  • a lighting device that irradiates the doctor wafer DW in the unit / device with light can be provided.
  • the power supply for supplying the power required for operating the doctor wafer DW to the electrodes, the output of the command signal instructing the doctor wafer DW to read the pixel data, and the pixel data output from the doctor wafer DW (also in this case). It can be connected to a signal processing device that processes image signals).
  • the lighting device can also be provided on the ceiling of the room forming the wafer transport space, the ceiling of the delivery section 14, and the like.
  • the amount of particles existing on the surface of the doctor wafer DW is measured based on the signal output from each pixel 105 of the doctor wafer DW.
  • the carrier C accommodating the doctor wafer DW is placed on the carrier mounting portion 11 (step 1).
  • the fork (board holder) of the board transfer device 13 of the carry-in / out station 2 invades the carrier C and takes out the doctor wafer DW from the carrier C (step 2).
  • the fork of the substrate transfer device 13 invades the delivery section 14, and the doctor wafer DW is placed on the delivery section 14 (step 3).
  • the doctor wafer DW is positioned between step 2 and step 3.
  • the electrode 175 of the fork 172 of the substrate transfer device 17 (13) and the electrode 35 of the spin chuck 30 can be surely brought into contact with the electrode 108 of the doctor wafer DW.
  • the positioning operation can be omitted.
  • the doctor wafer storage unit 92 is located in the transport unit 12, a series of steps are performed from the step of transporting the positioned doctor wafer DW stored in the doctor wafer storage unit 92 from the doctor wafer storage unit 92 to the delivery unit 14. You may start.
  • the fork of the board transfer device 17 of the processing station 3 invades the delivery section 14, and the doctor wafer DW is taken out from the delivery section 14 (step 4).
  • the fork of the substrate transfer device 17 penetrates into the processing unit 16 and passes the doctor wafer DW to the spin chuck 30 in the processing unit 16 (step 5).
  • Liquid treatment is performed on the doctor wafer DW in the processing unit 16 (step 6).
  • the fork of the substrate transfer device 17 invades the processing unit 16 and takes out the doctor wafer DW from the processing unit 16 (step 7).
  • the fork of the substrate transfer device 17 invades the delivery section 14, and the doctor wafer DW is placed on the delivery section 14 (step 8).
  • the fork of the substrate transfer device 13 invades the delivery section 14, and the doctor wafer DW is taken out from the delivery section 14 (step 9).
  • the fork of the substrate transfer device 13 penetrates into the original carrier C, and the doctor wafer DW is accommodated in the carrier C (step 10).
  • the electrode 108 of the doctor wafer DW is an external electrode (for example, the electrode 35 of the gripping claw 33 of the spin chuck 30 of the processing unit 16 or the electrode 175 of the holding claw 173 of the fork 172 of the substrate transfer device 17).
  • the signal can be output to the outside while in contact with.
  • a data buffer (memory unit) may be provided in the doctor wafer DW as described later, or the doctor wafer DW may be provided with a data buffer (memory unit).
  • a wireless output unit (antenna) may be provided on the doctor wafer DW (described later).
  • the doctor wafer DW may be used to periodically acquire the data of the transition of the particle amount as described above.
  • the data of the transition of the amount of particles acquired at a certain time with the data of the transition of the amount of particles acquired before that, it is possible to predict the possibility of a problem related to particles. For example, if the amount of particles is larger than before in steps 3, 4, 8, 9 and the like in which the doctor wafer DW is taken in and out of the delivery section 14, the particle-causing substance is attached to the delivery section 14. Is presumed to be. In this case, by cleaning the delivery portion 14, particle contamination of the wafer W can be prevented.
  • step 6 liquid treatment
  • steps 5 and 7 related to loading and unloading to and from the processing unit 16 are executed
  • particles generated by transport are detected. You can do it.
  • step 5 and 7 related to loading and unloading to and from the processing unit 16 are executed
  • particles generated by transport are detected. You can do it.
  • Steps 1 to 10 may be executed while changing only the processing unit 16 that is the target of steps 5 to 7.
  • the processing unit 16 in which particles are likely to be generated can be specified.
  • Step 6 is composed of a plurality of steps (sub-steps). First, the spin chuck 30 is rotated to rotate the doctor wafer DW, and the pre-wet liquid (for example, DIW) is supplied from the nozzle 41 to the doctor wafer DW (step 61).
  • the pre-wet liquid for example, DIW
  • the chemical solution A is supplied to the doctor wafer DW (step 62), then the rinse solution is supplied to the doctor wafer DW (step 63), then the chemical solution B is supplied to the doctor wafer DW (step 64), and then the doctor wafer.
  • a rinse solution is supplied to the DW (step 65), then an IPA is supplied to the doctor wafer DW (step 66), and then the doctor wafer DW is shaken off and dried (step 67).
  • the doctor wafer DW is used to periodically collect the data of the transition of the particle amount as described above. You may get it. By comparing the data of the transition of the amount of particles acquired at a certain time with the data of the transition of the amount of particles acquired before that, it is possible to predict the possibility of a problem related to particles.
  • the contamination status of one nozzle 41 and the processing fluid supply mechanism 43 connected to the nozzle 41 can be detected by using the doctor wafer DW.
  • the nozzle 41 supplies the processing liquid to the vicinity of the center of the doctor wafer DW rotated by the spin chuck, and the particle level is detected only in the vicinity of the center of the doctor wafer DW by the doctor wafer DW. do.
  • the change with time of the detection value of the particle amount by the doctor wafer DW (specifically, the increment from before the start of the processing of the particle amount) is detected from the time when the discharge of the treatment liquid from the nozzle 41 is started. do.
  • a branch supply pipe 432 branches from the main supply pipe 431 of the treatment liquid (for example, a circulation pipe connected to the treatment liquid storage tank) toward each treatment unit 16.
  • a flow meter 433, a constant pressure valve 434 functioning as a flow control valve, and an on-off valve 435 are interposed in the branch supply pipe 432 in order from the upstream side.
  • a nozzle 41 is connected to the downstream end of the branch supply pipe 432.
  • the on-off valve 435 may be contaminated or dust may be generated by the opening / closing operation of the on-off valve 435. It is presumed to have high sex. In this case, the on-off valve 435 may be washed or replaced with a new one.
  • the inside of the branch supply pipe 432 contact with the on-off valve 435) is preferably performed by performing dummy discharge from the nozzle 41 at a relatively large flow rate and preferably for a relatively long time. It may be possible to remove contaminants (including liquid level).
  • the processing in all the processing units 16 may be temporarily stopped, and the degree of contamination of the processing liquid flowing through the main supply pipe 431 may be confirmed.
  • step 201 it is determined whether or not the surface of the doctor wafer DW (described as "DrW” in the flowchart of FIG. 9) has sufficient cleanliness for inspection (step 201).
  • This determination can be performed, for example, by holding the doctor wafer DW by the spin chuck 30 of the substrate transfer device 17 or the processing unit 16 and reading the image data from the doctor wafer DW.
  • the determination can be made, for example, by whether or not the particles existing on the surface of the doctor wafer DW are equal to or less than the total amount reference value of the particles determined for each particle size.
  • the inspection is temporarily stopped (step 202).
  • the surface of the contaminated doctor wafer DW can be subjected to two-fluid cleaning or scrub cleaning, or the surface of the doctor wafer DW can be regenerated (details will be described later).
  • the contaminated doctor wafer DW may be replaced with another clean doctor wafer DW and the process may proceed to step 203.
  • the judgment result is OK, that is, if it is determined that the surface of the doctor wafer DW has sufficient cleanliness, a series of processes are performed on the doctor wafer DW using the process recipe of the wafer W. conduct. After the processing is completed, the amount of particles on the surface of the doctor wafer DW is measured (step 203). This measurement can be performed, for example, in a state where the doctor wafer DW is continuously held by the spin chuck 30 of the processing unit 16.
  • step 204 the amount of particles before the liquid treatment and the amount of particles after the liquid treatment are compared (step 204), and if the increment of the particle amount is equal to or less than a predetermined threshold value, the determination result is OK, and the wafer W by the processing unit 16 Processing is permitted (step 205). With the above, the inspection is completed.
  • step 207 the processing of the wafer W by the processing unit 16 is prohibited (step 207) (details will be described later).
  • step 206 If it is determined in step 206 that the determination is NG for the first time, an alarm is generated by a user interface such as a display or an alarm sound generator, and processing of the wafer W by the processing unit 16 to be inspected is temporarily prohibited. (Step 208).
  • the processing schedule may be changed so as to exclude the processing unit 16.
  • the cause of particle generation is estimated by comparing the time-dependent change data of particles measured using the doctor wafer DW with the processing log of the processing unit 16.
  • the processing log is data showing the relationship between the time and the executed procedure. For example, "13:56:25: Open the on-off valve of the processing fluid supply mechanism 43 (start discharging the chemical solution A from the nozzle 41). ) ”, Which is a collection of data in the format.
  • the cause of particle generation is estimated by making the determination as described in the above-mentioned Specific Example 2 and Specific Example 3 (step 209).
  • the cause of the generation of particles is (A) dirt on the piping (including valves, flowmeters, etc.) of the processing fluid supply mechanism 43 (liquid supply system), for example, the liquid supply system is washed (flushed).
  • the processing fluid supply mechanism 43 is used to execute a dummy tip spence from the nozzle 41 for a predetermined time to wash away the dirt in the pipe (step 211).
  • the cause is likely to be (B). If a large number of particles are detected on the peripheral edge of the doctor wafer DW while the treatment liquid is being applied to the center of the doctor wafer DW, the cause may be (B). Turns out to be higher.
  • the cleaning liquid is sprayed from a cup inner wall cleaning nozzle or a chamber inner wall cleaning nozzle (not shown) to spray the cleaning liquid on the inner wall of the cup and the inner wall of the cup. Clean the inner wall of the chamber (step 212).
  • step 211 or step 212 the flow returns to step 201. After that, if the determination result in step 204 is OK, the processing unit 16 is permitted to process the wafer W.
  • step 204 If the determination result in step 204 is NG again, the determination result in step 206 is correct (Y), and the processing of the wafer W of the processing unit 16 is prohibited.
  • an alarm is generated by a user interface such as a display or an alarm sound generator, prompting an operator to clean or overhaul the processing unit 16.
  • step 211 and step 212 a cleaning operation that can be executed by automatic operation is performed, but the cleaning operation is not limited to this.
  • the processing unit 16 may be cleaned or overhauled by an operator.
  • the cause of particle generation can be estimated from the distribution tendency of particles on the doctor wafer DW. For example, if the distribution of particles as shown in FIG. 10 is confirmed immediately after the fork of the substrate transfer device 13 takes out the doctor wafer DW from the carrier C, it can be determined that the slot of the carrier C is contaminated. In FIG. 10, particles are recognized in the portion of the doctor wafer DW that comes into contact with the slot of the carrier C.
  • the delivery section 14 is contaminated. .. In this case, it is considered that the cause is that the particles that have fallen off from the ceiling portion of the delivery portion 14 fall.
  • the three gripping claws of the spin chuck 30 (at equal intervals in the circumferential direction) are confirmed. It can be determined that (placed) is contaminated.
  • the processing liquid that is about to scatter to the outside of the doctor wafer DW collides with the gripping claw, and the particles adhering to the gripping claw fall off, contaminating the surface of the doctor wafer DW. do.
  • gripping the fork immediately after the doctor wafer DW held by the fork 172 of the substrate transfer device 17 (or 13) is placed at the transfer destination (for example, the spin chuck of the processing unit 16). If particles are confirmed in the vicinity of the portion in contact with the claw, it can be determined that the holding claw 173 of the fork 172 is contaminated.
  • FIGS. 13A, 13B, and 13C show the relationship between the position of the nozzle 41 and the amount of particles when the processing liquid is supplied from the nozzle 41 to the rotating doctor wafer DW.
  • the area painted in black is the area with a particularly large number of particles. In this case, there are many particles near the landing point of the treatment liquid from the nozzle 41. In such a case, it is presumed that a large amount of particles are contained in the processing liquid discharged from the nozzle 41.
  • FIG. 13 (D) shows the state at the time of shaking off and drying, and a region having many ring-shaped particles is formed on the peripheral edge of the doctor wafer DW.
  • the drying conditions are inappropriate or the mist scattered from the doctor wafer DW is repelled by the recovery cup and reattached to the doctor wafer DW.
  • FIG. 14 is a schematic diagram showing a state in which particles P larger than the pixel size are present above the plurality of pixels 105.
  • the thickness of the particles P is thick at the central portion and thin at the peripheral portion.
  • most of the illumination light L applied to the central portion of the particles P is blocked by the particles P and does not reach the pixel 105.
  • a part of the illumination light L applied to the peripheral portion of the particles P transmits the particles. Further, the illumination light L may wrap around the periphery of the particle P and reach the pixel.
  • FIG. 15 schematically shows the distribution of the light receiving amount of each pixel 105 in the case shown in FIG. It corresponds to one pixel 105 of one black dot, and the larger the size of the black dot, the smaller the amount of light received.
  • the intensity of the light when the illumination light L reaches the pixel 105 as it is (without being blocked by the particles P) is set to 1, and the intensity of the light reaching the pixel 105 is predetermined. If it is smaller than the threshold value (for example, less than 0.8), it may be determined that the particles are directly above the pixel 105.
  • the threshold value may be set experimentally by collating the data obtained by a proven conventional method (for example, a method utilizing laser reflection / diffraction) with the data obtained by using the doctor wafer DW.
  • adjacent pixels 105 if the intensity of light received by one pixel 105 is greater than the threshold and the intensity of light received by the other pixel 105 is less than the threshold, particles between the adjacent pixels 105. It can be determined that a part of the contour of P exists. By detecting all of the other adjacent pixels 105 having such a relationship, the contour of the particle P can be specified.
  • the threshold may be changed according to the particle size (which can be determined by the number of consecutive pixels whose light intensity is, for example, less than 0.8).
  • the threshold value when particles smaller than the pixel size (for example, about 5 nm) are present on one pixel can be, for example, less than 0.5.
  • Water marks can be detected by the same detection principle as particles, except that the light transmittance is larger than that of general particles.
  • the illumination light L is turned by the scratch S and hardly reaches the pixel 105 directly under the scratch S as shown in FIG.
  • the scratch S extends continuously linearly over a large number of pixels 105. Therefore, when the pixels 105 having a small light receiving amount are linearly connected, it can be determined that there is a scratch above these pixels 105.
  • the doctor wafer DW is reused by thinly scraping at least the vicinity of the outermost surface of the protective layer 106 by chemical treatment or CMP treatment. You will be able to do it.
  • the hydrophobic thin film may be reformed after the above treatment.
  • the transparent glass 106b is completely removed leaving the pixel protective damper 106a. After that, the layer of the transparent glass 106b may be formed again.
  • the basic function of the doctor wafer DW is to output the electric charge output from each pixel 105 of the light receiving layer 104 to the outside via the wiring layer 102 (including a logic circuit, an amplifier, etc.). ..
  • data acquisition and data are acquired only when the electrode of the doctor wafer DW and the external electrode (for example, the electrode of the gripping claw of the spin chuck, the electrode of the holding claw of the fork of the substrate transport mechanism 13, etc.) are in contact with each other. Cannot send.
  • the memory unit 107a can be composed of, for example, a DRAM, an RRAM, an MRAM, a NAND flash memory, or the like.
  • the power storage unit 107b can be composed of a battery, a capacitor, or the like.
  • the antenna portion can be made of an amorphous soft magnetic material.
  • FIG. 17 schematically shows a doctor wafer DW provided with a memory unit 107a in addition to the wiring layer 102, the light receiving layer 104, and the protective layer 106.
  • FIG. 18 schematically shows a doctor wafer DW provided with a memory unit 107a and a storage unit 107b in addition to the wiring layer 102, the light receiving layer 104, and the protective layer 106.
  • FIG. 19 schematically shows a doctor wafer DW provided with a memory unit 107a, a storage unit 107b, and an antenna unit 107c in addition to the wiring layer 102, the light receiving layer 104, and the protective layer 106.
  • the nanolens array may be incorporated in the protective layer 106.
  • the individual nanolenses 109 can be placed directly above each pixel 105.
  • the outermost surface of the protective layer 106 can be formed of transparent glass (SiOx) or the like.
  • the light receiving layer 104 may be provided only on a part of the surface of the doctor wafer DW.
  • the light receiving layer 104 may be provided only on a plurality of lines extending in the diameter direction of the doctor wafer DW.
  • Each layer such as the wiring layer 102 to the doctor wafer DW and the light receiving layer 104 can be formed on the semiconductor wafer by using the semiconductor device manufacturing technology (film forming technology).
  • a doctor wafer DW may be constructed by attaching a preformed imaging device onto a substrate.
  • the electrode 35 is provided on the gripping claw 34 of the mechanical chuck, but the present invention is not limited to this.
  • the spin chuck is a vacuum chuck
  • an electrode may be provided on the vacuum chuck and an electrode may be provided on a portion of the back surface of the doctor wafer DW in contact with the vacuum chuck at the center.
  • particle level inspection can be performed at various places of the substrate processing system 1. If a lighting device that appropriately irradiates the doctor wafer DW with illumination light is installed, particle level inspection can be performed even during processing and transportation of the doctor wafer DW. Further, by providing the doctor wafer DW with the memory unit 107a, the power storage unit 107b, the antenna unit 107c, and the like, it is possible to perform particle level inspection at an arbitrary timing. This makes it possible to easily identify the cause of particle generation in a short time.
  • the conventional particle level inspection method using a stand-alone particle inspection device can only compare the particle level before and after processing and before and after transportation, and cannot inspect the particle level during processing and transportation.
  • wet wafers cannot be inspected.
  • the wafer may be contaminated while it is being transported to the stand-alone particle inspection device. Many of these problems can be solved in the above embodiments.

Abstract

Ce procédé de fonctionnement pour un dispositif de traitement de substrat comprend : une étape de préparation d'un substrat de test pourvu des éléments suivants, un matériau de base en forme de plaque, un élément d'imagerie disposé sur au moins une partie d'une surface du matériau de base, une couche protectrice transmettant la lumière formée sur une surface de l'élément d'imagerie, et une unité de sortie qui délivre la sortie d'élément d'imagerie à une source externe ; une étape de test pour traiter le substrat de test à l'aide d'une unité de traitement ainsi que pour détecter l'état d'un contaminant adhérant au substrat de test après ou pendant le traitement à l'aide du substrat de test, et/ou le transport du substrat de test à l'aide d'un mécanisme de transport ainsi que la détection de l'état d'un contaminant adhérant au substrat de test pendant ou après le transport à l'aide du substrat de test ; et une étape de détermination pour déterminer, sur la base de l'état du contaminant détecté pendant l'étape de test, si un substrat de produit doit être traité ou transporté par le dispositif de traitement de substrat.
PCT/JP2021/020440 2020-06-04 2021-05-28 Procédé de fonctionnement pour dispositif de traitement de substrat WO2021246328A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10314150A1 (de) * 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
JP2005516400A (ja) * 2002-01-24 2005-06-02 センサレー コーポレイション 処理状況検知ウェハおよびデータ解析システム
JP2006505940A (ja) * 2002-11-04 2006-02-16 ブリオン テクノロジーズ，インコーポレーテッド 集積回路の製造を監視する方法及び装置
JP2008032401A (ja) * 2006-07-26 2008-02-14 Fujifilm Corp 赤外カットフィルタの検査方法及び装置
JP2020500415A (ja) * 2016-10-22 2020-01-09 ラピドット， マタンＬＡＰＩＤＯＴ， Ｍａｔａｎ 欠陥の発生及び位置の検出のための移動式検査システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP2014022578A (ja) 2012-07-19 2014-02-03 Tokyo Electron Ltd 処理液供給装置及び処理液供給方法
JP2016146440A (ja) 2015-02-09 2016-08-12 大日本印刷株式会社 液処理装置および液処理方法
US10067070B2 (en) 2015-11-06 2018-09-04 Applied Materials, Inc. Particle monitoring device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005516400A (ja) * 2002-01-24 2005-06-02 センサレー コーポレイション 処理状況検知ウェハおよびデータ解析システム
JP2006505940A (ja) * 2002-11-04 2006-02-16 ブリオン テクノロジーズ，インコーポレーテッド 集積回路の製造を監視する方法及び装置
DE10314150A1 (de) * 2003-03-28 2004-10-21 Infineon Technologies Ag Verfahren und Messanordnung zur Erfassung von Umgebungs- und Prozessbedingungen in einer Fertigungsumgebung für Halbleiterwafer
JP2008032401A (ja) * 2006-07-26 2008-02-14 Fujifilm Corp 赤外カットフィルタの検査方法及び装置
JP2020500415A (ja) * 2016-10-22 2020-01-09 ラピドット， マタンＬＡＰＩＤＯＴ， Ｍａｔａｎ 欠陥の発生及び位置の検出のための移動式検査システム

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