WO2021235530A1 - Spherical crystalline silica particles and method for producing same - Google Patents

Spherical crystalline silica particles and method for producing same Download PDF

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Publication number
WO2021235530A1
WO2021235530A1 PCT/JP2021/019250 JP2021019250W WO2021235530A1 WO 2021235530 A1 WO2021235530 A1 WO 2021235530A1 JP 2021019250 W JP2021019250 W JP 2021019250W WO 2021235530 A1 WO2021235530 A1 WO 2021235530A1
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silica particles
mass
spherical
crystalline silica
calcium
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PCT/JP2021/019250
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French (fr)
Japanese (ja)
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睦人 田中
竜太郎 沼尾
泰宏 青山
一彦 楠
昌史 牛尾
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日鉄ケミカル&マテリアル株式会社
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Priority to JP2022524543A priority Critical patent/JPWO2021235530A1/ja
Priority to KR1020227039520A priority patent/KR20230011937A/en
Priority to CN202180036714.6A priority patent/CN115697907A/en
Publication of WO2021235530A1 publication Critical patent/WO2021235530A1/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/32Spheres
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

Definitions

  • the present invention relates to spherical crystalline silica particles and a method for producing the same, particularly spherical crystalline silica particles having a high proportion of quartz and a method for producing the same.
  • the frequency is increasing due to the increase in the amount of information due to the sophistication of communication technology and the rapid expansion of the use of millimeter wave bands such as millimeter wave radar.
  • the circuit board that transmits these high-frequency signals is composed of an electrode and a dielectric board that form a circuit pattern.
  • the dielectric loss tangent (tan ⁇ ) of the dielectric material is small.
  • the dielectric material must have low polarity and a low dipole moment.
  • the dielectric material ceramic particles, resins, and composites obtained by combining them are mainly used.
  • ceramic particles and resins having a lower dielectric loss tangent (tan ⁇ ) are required.
  • the resin has a relatively small relative permittivity ( ⁇ r) and is suitable for high-frequency devices, but has a dielectric loss tangent (tan ⁇ ) and a coefficient of thermal expansion larger than those of ceramic particles.
  • the composite of the ceramic particles for the millimeter wave band and the resin is (1) made into a low dielectric loss tangent (tan ⁇ ) of the ceramic particles themselves, and (2) is highly filled with the ceramic particles and has a large dielectric loss tangent (tan ⁇ ). It is suitable to reduce the amount of resin shown.
  • Silica (SiO 2 ) particles have been conventionally used as ceramic particles. If the shape of the silica particles is angular, the fluidity, dispersibility, and filling property in the resin are deteriorated, and the manufacturing equipment is also worn. In order to improve these, spherical silica particles are widely used. It is considered that the closer the spherical silica particles are to a true sphere, the better the filling property, fluidity, and mold wear resistance in the resin, and particles having high roundness have been pursued. Furthermore, further improvement of filling property has been studied by optimizing the particle size distribution of the particles.
  • the thermal spraying method is used as a method for producing spherical silica.
  • the particles are melted by passing them through a high temperature region such as a flame, and the shape of the particles becomes spherical due to surface tension.
  • the melted spheroidized particles are collected by airflow so that the particles do not fuse with each other, but the particles after thermal spraying are rapidly cooled. Since silica is rapidly cooled from the molten state, silica does not crystallize, has an amorphous structure, and becomes glass-like particles generally called quartz glass.
  • the spherical silica particles produced by the thermal spraying method are amorphous, their thermal expansion rate and thermal conductivity are low.
  • the coefficient of thermal expansion of the amorphous silica particles is 0.5 ppm / K, and the thermal conductivity is 1.4 W / mK.
  • These physical properties are substantially the same as the coefficient of thermal expansion of quartz glass having an amorphous structure without having a crystal structure.
  • the coefficient of thermal expansion of Si which is the main raw material of the IC chip, is 3 to 5 ppm / K, and the coefficient of thermal expansion of the sealing resin for encapsulating the IC chip is extremely larger than that of Si.
  • the characteristics required for silica particles for encapsulants include filling property, fluidity, and mold abrasion resistance, which can be blended in a large amount with a resin to maintain the performance as a composite. , Excellent dielectric properties of high frequencies in the millimeter wave band. Since the dielectric property is a physical property value of the material, it is difficult to reduce the dielectric loss tangent of the amorphous silica particles.
  • Patent Document 1 is characterized in that a Zn compound is added in an amount of 0.5% by mass or more in terms of ZnO to silica gel having an average particle size of 0.1 to 20 ⁇ m, and this mixture is heat-treated at 900 to 1100 ° C. A method for producing a porous powder having a main crystal phase of quartz is described.
  • Patent Document 2 describes an oxide of an alkali metal compound in amorphous spherical silica particles with respect to the total mass of the mass of the amorphous spherical silica particles and the mass of the alkali metal converted into oxides.
  • Spherical silica particles mixed in an oxide equivalent of 1 to 5% by mass are heat-treated at 800 ° C. to 1300 ° C.
  • spherical crystalline silica particles which has the crystal phase of the above and is characterized in that the amount of quartz crystals is 70% by mass or more of the whole, is shown. However, if the amount of alkali metal added is less than 0.4% by mass and the amount of alkaline earth metal is less than 1% by mass, the appearance probability of quartz is low.
  • Non-Patent Document 1 alkali metal oxides are systematically added to the synthesized amorphous spherical silica to form pellets, and then heat treatment is performed to examine the effects of crystallization and phase transition due to the additives. .. According to this, when the additive is lithium oxide (Li 2 O), it is shown that quartz can be obtained by adding 0.5% by mass or more and firing at 800 ° C. or higher.
  • the additive lithium oxide (Li 2 O)
  • quartz can be obtained by adding 0.5% by mass or more and firing at 800 ° C. or higher.
  • Non-Patent Document 2 investigates the effect of cations on the crystallization and phase transition of silica substances. Among them, it has been shown that quartz appears as the most dominant phase by adding 10% LiCl by mass to the synthesized amorphous silica and heat-treating it at 800 ° C.
  • the present inventors have aimed to search for filler particles for semiconductor encapsulation having excellent dielectric properties in the millimeter-wave band having a frequency of 30 GHz to 80 GHz, and to fabricate a resin composite for high-frequency devices by mixing them with a resin. ..
  • it was found that it is effective to first heat-treat and crystallize spherical molten (amorphous) silica in order to obtain a resin composite having a low dielectric loss tangent. That is, it was confirmed that the dielectric loss tangent in the millimeter wave band (30 GHz to 80 GHz) of crystalline silica is significantly lower than that of amorphous silica which has been widely used in the past.
  • the spherical crystalline silica particles become silica particles exhibiting excellent dielectric properties for high-frequency device applications.
  • the crystalline silica obtained by heat treatment is quartz, cristobalite or a mixture thereof. Since quartz and cristobalite have different physical characteristics, the crystalline silica phase is preferably a single phase when used as a filler.
  • Patent Document 1 As a method for obtaining quartz by crystallizing spherical amorphous silica, in Patent Document 1, 0.5% by mass or more of a zinc compound is added in terms of oxide, and this mixture is heat-treated at 900 to 1100 ° C. Is disclosed. However, as a result of the reproduction test by the present inventors, crystallization itself did not proceed at the heat treatment temperature of 950 ° C. or lower, and it remained amorphous silica. When the heat treatment was performed above 950 ° C, crystallization started to proceed, but the crystallinity remained at about 20% even at 1100 ° C. In addition, the crystal phase that appeared was mainly cristobalite, and a single phase of quartz could not be obtained with a high content.
  • spherical silica particles mixed in an oxide equivalent of 1 to 5% by mass with respect to the total mass of the alkali earth metal in terms of oxide are heat-treated at 800 ° C to 1300 ° C.
  • Spherical crystals comprising a step of cooling the cooled spherical silica particles, wherein the cooled spherical silica particles have a crystal phase of 90% by mass or more, and the quartz crystals are 70% by mass or more of the whole.
  • a method for producing quality silica particles is shown. Calcium is shown as an alkaline earth metal in the examples, but when 0.5% by mass of calcium, which is a comparative example, is added and heat-treated at 1100 ° C., the appearance of quartz is less than 30%. Low. Further, when calcium is added in an amount of less than 1% by mass in terms of oxide, spherical crystalline silica having a high quartz content has not been obtained so far.
  • Non-Patent Document 1 shows that quartz can be obtained by adding 0.5% by mass or more of lithium oxide to the synthesized amorphous spherical silica and firing it at 800 ° C. or higher.
  • Non-Patent Document 2 shows that 10% by mass of lithium chloride (LiCl) is added to the synthesized amorphous silica and heat-treated at 800 ° C. to allow quartz to appear as the most dominant phase.
  • LiCl lithium chloride
  • alkaline earth metals such as calcium and alkali metals such as lithium are not preferable as additives to the semiconductor encapsulant. From the viewpoint of normal operation of semiconductor devices and maintenance of mounting reliability, it is necessary to reduce the amount of alkaline earth metal and alkali metal element added.
  • Non-Patent Document 3 describes that when heat treatment is performed at 300 ° C to 1200 ° C under 20,000 to 30,000 atm, it crystallizes into quartz, but a pressurizing device at tens of thousands of atmospheres. Is not preferable because the amount of processing is limited and it is difficult to carry out mass production industrially. Although there have been many reports of crystallization experiments using temperature and impurity elements as variable factors, spherical crystals having a crystalline silica content of 40% or more and a quartz ratio of 80% by mass or more in the crystalline silica have been reported so far.
  • the present invention has a high crystallization rate while keeping the content of spherical silica particles, that is, alkali metal and alkaline earth metal, suitable as fillers for semiconductor encapsulants having excellent dielectric properties in the millimeter wave band low. It is an object of the present invention to provide spherical crystalline silica particles having a high proportion of quartz and a method for producing the same.
  • the powder composed of amorphous silica particles having a circularity of 0.80 or more contains a calcium raw material containing 0.004 or more and less than 1.0% by mass of calcium in terms of oxide, and lithium as an oxide.
  • a mixed raw material powder obtained by mixing both a lithium raw material containing 0.02% by mass or more and less than 0.40% by mass in terms of heat at a heat treatment temperature of 850 ° C to 1150 ° C, each of lithium and calcium can be obtained.
  • the simultaneous addition of lithium metal and calcium metal to silica exerts a synergistic effect on quartz crystallization, and is added compared to the case where each element is added alone. It is considered that the crystallization of quartz was promoted despite the reduction of the amount.
  • the crystalline silica particles obtained by the heat treatment at 850 to 1150 ° C. contain a crystalline silica phase, and the crystalline silica phase is substantially a quartz single phase.
  • the term "single phase" as used herein means that the proportion of quartz in the crystalline silica phase is 80% by mass or more, preferably 85.0% by mass or more, and more preferably 90.0% by mass or more.
  • the present invention provides the following spherical silica particles and a method for producing the same.
  • the circularity is 0.80 or more
  • lithium is contained in an oxide equivalent of 0.02% by mass or more and less than 0.40% by mass
  • calcium is contained in an oxide equivalent of 0.004% by mass or more and 1.0% by mass.
  • % of the spherical crystalline silica particles containing the crystalline silica phase the ratio of the crystalline silica phase to the spherical crystalline silica particles is 40.0% or more, and the above-mentioned Spherical crystalline silica particles in which the proportion of quartz in the crystalline silica phase is 80.0% by mass or more.
  • the method for producing spherical crystalline silica particles according to any one of (1) to (4) which comprises a spherical amorphous silica particles having a circularity of 0.80 or more, a calcium raw material, and a calcium raw material.
  • a method for producing spherical crystalline silica particles which comprises heat-treating a mixed raw material powder obtained by mixing a lithium raw material at 850 ° C to 1150 ° C.
  • It comprises heat-treating a mixed raw material powder obtained by mixing a lithium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component at 850 ° C to 1150 ° C.
  • the present invention comprises heat-treating a mixed raw material powder obtained by mixing a calcium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a lithium component at 850 ° C to 1150 ° C.
  • a method for producing spherical crystalline silica particles is
  • a method for producing spherical crystalline silica particles which comprises heat-treating spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component and a lithium component at 850 ° C to 1150 ° C.
  • spherical silica particles suitable for use as a filler for semiconductor encapsulants having excellent dielectric properties in the millimeter wave band, that is, high crystals while keeping the content of alkali metal and alkaline earth metal low It is possible to provide spherical crystalline silica particles having a high crystallization rate and a high proportion of quartz, and a method for producing the same.
  • FIG. 1 is an XRD pattern of amorphous silica before heat treatment and silica (after heat treatment) according to one aspect of the present invention.
  • the spherical crystalline silica according to one aspect of the present invention has a circularity of 0.80 or more, contains lithium in an oxide equivalent of 0.02% by mass or more and less than 0.40% by mass, and contains calcium in an oxide equivalent of 0. Spherical crystalline silica particles containing .004% by mass or more and less than 1.0% by mass and containing a crystalline silica phase, wherein the ratio of the crystalline silica phase to the spherical crystalline silica particles is 40.
  • the phase of crystalline silica referred to here is 40.0% or more is the ratio of the phase of crystalline silica to the spherical crystalline silica particles, and the method for obtaining the phase will be described later.
  • the crystal structure of silica includes cristobalite, quartz and the like. Silica having these crystal structures has a higher thermal conductivity than amorphous silica. Therefore, in the filler for semiconductor encapsulation, the heat dissipation from the IC chip can be improved by replacing amorphous silica with crystalline silica in an appropriate amount. Further, since crystalline silica has a low dielectric loss tangent in the millimeter wave band, the dielectric loss tangent of the semiconductor encapsulant decreases as more amorphous silica is replaced with crystalline silica in the semiconductor encapsulating filler.
  • the spherical crystalline silica particles of the present invention may be produced by mixing spherical amorphous silica with both a calcium raw material and a lithium raw material and heat-treating the mixture (also referred to as a mixed raw material).
  • a mixed raw material obtained by mixing a lithium raw material with spherical amorphous silica particles containing a calcium component may be heat-treated.
  • the mixed raw material obtained by mixing the calcium raw material with the spherical amorphous silica particles containing a lithium component may be heat-treated.
  • it may be produced by heat-treating spherical amorphous silica particles containing a calcium component and a lithium component.
  • Amorphous spherical silica particles as a raw material can be produced by a method such as a thermal spraying method.
  • a thermal spraying method natural silica powder pulverized and adjusted to a desired particle size is passed through a flame to melt the particles, and the shape of the particles becomes spherical due to surface tension.
  • spherical amorphous silica particles having a circularity of 0.80 or more can be produced.
  • the composition of the spherical amorphous silica particles is not particularly limited as long as the main component is silica and the finally obtained spherical crystalline silica particles are in a desired range.
  • the composition of the spherical amorphous silica particles may be 98.0% by mass or more of silica (SiO 2 ), and Ca, Li, Al, Na, Mg, Ba as trace-containing elements. , Zn and the like may be included. In one aspect, the composition of the spherical amorphous silica particles may contain less than 0.5% by weight of Zn.
  • the calcium raw material is mixed with spherical amorphous silica particles and heat-treated.
  • the composition and mixing amount of the calcium raw material are not particularly limited as long as the finally obtained spherical crystalline silica particles are in a desired range, and are appropriately adjusted.
  • the calcium raw material may be calcium hydroxide, calcium oxide or the like that are stably present in the atmosphere, or may be natural minerals.
  • the calcium raw material can be added in the form of powder, aqueous solution or the like so as to be uniformly mixed with the spherical amorphous silica particles. Further, at least a part of the calcium raw material may be a trace element contained in the spherical amorphous silica particles.
  • the spherical amorphous silica particles can be used as a calcium raw material. May be combined with. Further, when the spherical amorphous silica particles contain calcium but are not sufficient, a calcium raw material can be added so that the finally obtained spherical crystalline silica particles have a desired calcium content.
  • the lithium raw material is mixed with spherical amorphous silica particles and heat-treated.
  • the composition and mixing amount of the lithium raw material are not particularly limited as long as the finally obtained spherical crystalline silica particles are in a desired range, and are appropriately adjusted.
  • the form of adding the lithium raw material such as an oxide, a carbonic acid oxide, a hydroxide, and a nitric acid oxide, is not particularly limited. It can be added in the form of a powder, an aqueous solution, or the like so as to be uniformly mixed with the amorphous spherical silica particles.
  • the lithium raw material may be a trace element contained in the spherical amorphous silica particles.
  • the spherical amorphous silica particles can be used as a lithium raw material. May be combined with.
  • a calcium raw material can be added so that the finally obtained spherical crystalline silica particles have a desired lithium content.
  • the spherical amorphous silica particles are mixed with both a calcium raw material and a lithium raw material.
  • the calcium raw material and / or the lithium raw material may be contained in spherical amorphous silica.
  • the mixing method is not particularly limited as long as each raw material is evenly dispersed and mixed in the mixture. Mixing may be performed by a powder mixer. By mixing, the calcium raw material and the lithium raw material come into contact with at least a part of the spherical amorphous silica, and in the subsequent heat treatment step, the crystallization of the spherical amorphous silica, particularly the crystallization into quartz, is promoted.
  • the lithium contained in the produced spherical crystalline silica particles is 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and the calcium contained is in terms of oxide.
  • Each raw material is mixed and mixed so as to be 0.004% by mass or more and less than 1.0% by mass. Since the total amount of the blended lithium raw material and calcium raw material is not contained in the produced spherical crystalline silica particles, it is preferable to blend them in consideration of the content ratio.
  • the mixing is such that the calcium raw material and the lithium raw material are brought into contact with at least a part of the spherical amorphous silica and does not promote the pulverization of the spherical amorphous silica, the circularity thereof is the mixing. There is almost no decrease before and after.
  • the temperature for heat-treating the mixed raw material obtained by mixing the spherical amorphous silica particles, the calcium raw material and the lithium raw material is in the temperature range of 850 ° C to 1150 ° C.
  • the atmosphere during the heat treatment can be an oxidizing atmosphere such as the atmosphere and an inert gas atmosphere such as nitrogen or argon. Atmospheric pressure is preferably atmospheric pressure because it is industrially heat-treated in large quantities. If the heat treatment temperature is lower than 850 ° C., crystallization does not proceed or is extremely slow. On the other hand, when the temperature is higher than 1150 ° C., the crystallization of cristobalite proceeds competitively with the quartz crystallization.
  • the substantially single phase refers to a state in which the quartz phase occupies 80% by mass or more in the crystalline silica phase contained in the spherical crystalline silica particles.
  • the heat treatment temperature is 875 ° C to 1110 ° C.
  • the time of the heat treatment can be appropriately adjusted so that the desired degree of crystallinity can be obtained.
  • the quartz crystallization of the spherical amorphous silica particles proceeds due to the synergistic effect of the two elements as compared with the case where a single element is present.
  • lithium may be added as a lithium raw material (lithium carbonate or the like) at the time of mixing, or may be contained in the spherical amorphous silica particles in advance.
  • calcium may be supplied as a calcium raw material (calcium oxide or the like) at the time of mixing, or may be contained in the spherical amorphous silica particles in advance. Since the lithium and calcium are uniformly present in the spherical amorphous silica particles due to diffusion by the heating step, it is considered that the entire spherical amorphous silica particles crystallize into quartz. Therefore, as the heat treatment time becomes longer, lithium and calcium diffuse into the spherical amorphous silica particles, so that crystallization proceeds.
  • the crystallization progress is substantially determined by the heat treatment temperature, i.e., the retention time at maximum temperature, so crystallization control is at maximum temperature.
  • the holding time may be adjusted.
  • the heat treatment time may be adjusted in the range of approximately 1 hour to 48 hours, and may be 3 hours or more or 6 hours or more from the viewpoint of sufficiently promoting crystallization.
  • the heat treatment time may be 25 hours or less, 18 hours or less, or 12 hours or less from the viewpoint of cost reduction.
  • the mass diffusivity of the lithium element in the spherical amorphous silica particles increases, so that quartz crystallization proceeds.
  • the temperature exceeds 1150 ° C. the cristobalite phase appears competitively and quartz is no longer a single phase, so that there is an upper limit to the heat treatment temperature.
  • a suitable heat treatment time and temperature may be appropriately selected according to them. The rate of temperature rise and the rate of cooling do not significantly affect the appearance of spherical crystalline silica particles when the heat treatment is performed in an electric furnace.
  • the circularity of the spherical crystalline silica of the present invention hardly decreases before and after the heat treatment for crystallization.
  • the spherical crystalline silica particles of the present invention are crystallized at a relatively low temperature by heat treatment at 850 ° C to 1150 ° C, and the circularity hardly decreases in this temperature range.
  • Amorphous silica particles may be bonded by fusion or sintering when the temperature exceeds 1100 ° C., but the spherical crystalline silica particles of the present invention are crystallized at 850 ° C to 1150 ° C (already). Since it is not amorphous), it is possible to completely suppress the bonding of particles due to fusion or sintering.
  • the spherical crystalline silica particles of the present invention have a circularity of 0.80 or more.
  • the circularity is less than 0.80, the fluidity, dispersibility, and filling property are not sufficient when used as silica particles or the like of a resin composite composition for a semiconductor encapsulant, and the encapsulant is produced. Equipment wear may be accelerated.
  • the average circularity of the spherical amorphous silica particles obtained by thermal spraying may be 0.80 or more. Since the temperature in the heat treatment step for crystallization is 850 to 1150 ° C., the circularity of the silica particles hardly changes before and after the heat treatment.
  • the method of the present invention can realize desired spherical crystalline silica particles having a high degree of circularity. From the viewpoint of improving fluidity, dispersibility, filling property, and reducing wear of equipment, the higher the circularity is, the more preferable it is, and it may be 0.85 or more, or 0.90 or more. On the other hand, since it may be difficult to make the circularity 1.0, that is, a perfect circle, the upper limit of the circularity may be 0.99 or less or 0.97 or less.
  • the circularity is obtained by "perimeter of the circle corresponding to the projected area of the photographed particle ⁇ perimeter of the image of the photographed particle", and it means that the closer this value is to 1, the closer to the true sphere.
  • the circularity of the present invention was determined by a flow-type particle image analysis method.
  • spherical crystalline silica particles are flowed into a liquid and imaged as a still image of the particles, and image analysis is performed based on the obtained particle image to obtain the circularity of the spherical crystalline silica particles.
  • the average value of these plurality of circularities was defined as the average circularity.
  • the average value cannot be obtained correctly.
  • At least 100 or more particles are required, preferably 500 or more, and more preferably 1000 or more. In the present invention, about 100 particles were used by using the flow type particle image analyzer "FPIA-3000" (manufactured by Spectris). The circularity of the spherical amorphous silica particles is also determined in the same manner.
  • lithium is 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and calcium is converted into oxide. It contains 0.004% by mass or more and less than 1.0% by mass.
  • the lower limit of lithium is preferably 0.05% by mass, more preferably 0.10% by mass, and even more preferably 0.25% by mass.
  • the upper limit of lithium is preferably less than 0.35% by mass, and more preferably less than 0.30% by mass.
  • the preferable lower limit of calcium is 0.20% by mass, and more preferably 0.6% by mass.
  • the upper limit of calcium is preferably 0.9% by mass, and more preferably 0.8% by mass.
  • the content of lithium and calcium can be measured, for example, by atomic absorption spectrometry, ICP mass spectrometry (ICP-MS). Specifically, it was measured using ICP-MS (“7700X” manufactured by Agilent) in accordance with JIS-K0133. An aqueous solution in which silica particles were completely dissolved with hydrofluoric acid was used as a sample.
  • the content of the impurity element contained in the silica particles was defined as the content of the impurity element in the silica solution.
  • a base solution containing only reagents may be used.
  • spherical crystalline silica particles composed of a single phase having a high crystallization rate and a substantially high proportion of quartz can be obtained.
  • Lithium and calcium become almost in the form of oxides through heat treatment in the temperature range of 850 to 1150 ° C. for crystallization, after which they react with silica to incorporate lithium and calcium into the silica structure. The content thereof does not change much before and after the heat treatment in the above temperature range.
  • the composition of the raw materials is adjusted so that the finally obtained spherical crystalline silica particles have the predetermined lithium and calcium contents in consideration of the degree of the change. It can be adjusted as appropriate.
  • the spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the ratio of the phase of the crystalline phase silica to the spherical crystalline silica particles is 40.0% or more, and the crystalline silica is present.
  • the proportion of quartz in the phase is 80.0% by mass or more.
  • the silica particles obtained by the heat treatment are composed of amorphous and crystalline silica, it refers to the abundance ratio of amorphous and crystalline silica (so-called "crystallinity", and is referred to as such in the present specification.
  • the type of crystalline silica and its ratio can be determined by XRD.
  • the ratio of the crystalline phase can be obtained by calculating from the sum of the integrated intensities of the crystalline peaks (Ic) and the integrated intensities of the amorphous halo portion (Ia) by the following formula. More specifically, the ratio of the phase of crystalline silica contained in the spherical crystalline silica particles can be obtained.
  • X (crystal phase ratio) Ic / (Ic + Ia) ⁇ 100 (%)
  • the quantitative analysis by X-ray diffraction was performed by using the analysis method by the Rietveld method, and the quantitative analysis was performed without using a standard sample.
  • an X-ray diffractometer "D2 PHASER” manufactured by Bruker
  • Quantitative analysis of the crystal phase by the Rietveld method was performed by the crystal structure analysis software "TOPAS” (manufactured by Bruker).
  • the spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the ratio of the phase of the crystalline silica to the spherical crystalline silica particles is 40.0% or more, that is, 40.0%. It has the above-mentioned high crystallinity, and its dielectric positive contact is significantly lower than that of amorphous silica, which is preferable. From the viewpoint of reducing the dielectric loss tangent, the higher the crystallinity is, the more preferable it is, and it may be 70.0% or more, and more preferably 80.0% or more.
  • the spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the proportion of quartz in the phase of the crystalline silica is high, 80.0% by mass or more, and is substantially a single quartz phase. Therefore, various characteristics such as the coefficient of thermal expansion and the thermal conductivity of the spherical crystalline silica particles are substantially determined by the characteristics of quartz, that is, they do not fluctuate, and are preferable when used as a filler or the like. From the above viewpoint, the higher the proportion of quartz, the more preferable it is, and it may be 85.0% by mass or more, and more preferably 90.0% by mass or more.
  • the average particle size (D50) of the spherical crystalline silica particles may be 3 to 100 ⁇ m. If the average particle size is less than 3 ⁇ m, the cohesiveness of the particles becomes large and the fluidity is remarkably lowered, which is not preferable. If the average particle size exceeds 100 ⁇ m, voids between the particles tend to remain and it becomes difficult to improve the filling property, which is not preferable. More preferably, the average particle size is in the range of 10 to 80 ⁇ m. The particle size of the spherical amorphous silica particles before the heat treatment hardly changes before and after the heat treatment in the temperature range of 850 to 1150 ° C.
  • a median diameter D50 having a cumulative volume of 50% was determined in a volume-based particle size distribution measured by a laser diffraction / scattering type particle size distribution measurement method.
  • the laser diffraction / scattering type particle size distribution measurement method is a method in which a dispersion liquid in which spherical crystalline silica particles are dispersed is irradiated with laser light, and the particle size distribution is obtained from the intensity distribution pattern of the diffraction / scattering light emitted from the dispersion liquid.
  • a laser diffraction / scattering type particle size distribution measuring device "CILAS920" manufactured by Cirrus was used.
  • the average particle size of the spherical amorphous silica particles can be obtained in the same manner.
  • a resin composite composition such as a semiconductor encapsulant (particularly a solid encapsulant) and an interlayer insulating film can be obtained by using a slurry composition containing spherical crystalline silica particles and a resin. Further, by curing these resin complex compositions, a resin complex such as a sealing material (cured body) and a substrate for a semiconductor package can be obtained.
  • the resin composite composition for example, in addition to the spherical crystalline silica particles and the resin, a curing agent, a curing accelerator, a flame retardant, a silane coupling agent and the like are blended as necessary, and known for kneading and the like. Complex by method. Then, it is molded according to the application such as pellet form or film form.
  • the resin composite composition when the resin composite composition is cured to produce a resin composite, for example, the resin composite composition is melted by applying heat to be processed into a shape suitable for the intended use, and the heat is higher than that at the time of melting. In addition, it is completely cured. In this case, a known method such as a transfer molding method can be used. It was
  • a known resin when manufacturing a semiconductor-related material such as a packaging substrate or an interlayer insulating film, a known resin can be applied as the resin used for the resin composite composition, but it is preferable to use an epoxy resin.
  • the epoxy resin is not particularly limited, but for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, naphthalene type epoxy resin, phenoxy type epoxy resin and the like. Can be used. One of these can be used alone, or two or more having different molecular weights can be used in combination. Among these, an epoxy resin having two or more epoxy groups in one molecule is preferable from the viewpoint of curability, heat resistance and the like.
  • biphenyl type epoxy resin phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, epoxidized phenols and aldehydes novolak resin, glycidyl ether such as bisphenol A, bisphenol F and bisphenol S, Glycidyl ester acid epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, alkyl-modified polyfunctionality obtained by the reaction of polybasic acids such as phthalic acid and dimer acid with epochlorhydrin.
  • glycidyl ether such as bisphenol A, bisphenol F and bisphenol S
  • Glycidyl ester acid epoxy resin linear aliphatic epoxy resin
  • alicyclic epoxy resin alicyclic epoxy resin
  • heterocyclic epoxy resin alkyl-modified polyfunctionality obtained by the reaction of polybasic acids such as phthalic acid and dimer acid with epochlorhydrin.
  • Examples thereof include an epoxy resin into which the halogen of the above is introduced.
  • the epoxy resins having two or more epoxy groups in one of these molecules the bisphenol A type epoxy resin is particularly preferable.
  • a resin used for a resin composite composition such as a prepreg for a printed circuit board and various engineer plastics for applications other than the composite material for a semiconductor encapsulant
  • a resin other than an epoxy-based resin can also be applied.
  • polyamide such as silicone resin, phenol resin, melamine resin, urea resin, unsaturated polyester, fluororesin, polyimide, polyamideimide, polyetherimide, etc.; polybutylene terephthalate, polyethylene terephthalate, etc.
  • Polyester Polyphenylene sulfide, aromatic polyester, polysulfone, liquid crystal polymer, polyether sulfone, polycarbonate, maleimide modified resin, ABS resin, AAS (acrylonitrile-acrylic rubber / styrene) resin, AES (acrylonitrile / ethylene / propylene / diene rubber-styrene) ) Resin is mentioned.
  • AAS acrylonitrile-acrylic rubber / styrene
  • AES acrylonitrile / ethylene / propylene / diene rubber-styrene
  • Resin is mentioned.
  • a known curing agent may be used for curing the resin, but for example, a phenol-based curing agent can be used.
  • a phenol novolac resin, an alkylphenol novolak resin, polyvinylphenols and the like can be used alone or in combination of two or more.
  • the compounding amount of the phenol curing agent is preferably 0.1 or more and less than 1.0 in the equivalent ratio (phenolic hydroxyl group equivalent / epoxy group equivalent) with the epoxy resin. As a result, the unreacted phenol curing agent does not remain, and the hygroscopic heat resistance is improved.
  • the amount of the spherical crystalline silica particles of the present invention added to the resin composite composition is preferably large from the viewpoint of heat resistance and coefficient of thermal expansion, but is usually 70% by mass or more and 95% by mass or less, preferably 80% by mass. % Or more and 95% by mass or less, more preferably 85% by mass or more and 95% by mass or less. This is because if the blending amount of the silica powder is too small, it is difficult to obtain effects such as improving the strength of the encapsulating material and suppressing thermal expansion, and conversely, if it is too large, it is related to the surface treatment of the silica powder. This is because segregation due to aggregation of silica powder is likely to occur in the composite material, and the viscosity of the composite material becomes too large, which makes it difficult to put it into practical use as a sealing material.
  • silane coupling agent a known coupling agent may be used, but one having an epoxy-based functional group is preferable.
  • Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles were mixed with the spherical amorphous silica particles, filled in an alumina container, and heat-treated in an air atmosphere (atmospheric pressure) using an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.). The mixing amount of lithium carbonate is 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and calcium contained in the amorphous silica particles. Was 0.004% by mass in terms of oxide. The temperature was raised to 900 ° C.
  • Example 1 1000 ° C. (Example 2), and 1100 ° C. (Example 3) at a heating rate of 300 ° C./hour, and held for 6 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
  • Examples 4 to 6 Amorphous silica particles containing calcium were prepared by thermal spraying. The amount of calcium contained in the amorphous silica particles was 0.0040% by mass. 0.10% by mass (Example 4) and 0.07% by mass (Example 4) of lithium carbonate in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide. 5), 0.05% by mass (Example 6) were mixed. The heating rate was 300 ° C./hour, the temperature was raised to 930 ° C. (Example 4), 1030 ° C. (Example 5), and 1130 ° C. (Example 6), and the temperature was maintained for 6 hours. Then, it was cooled to room temperature at a heating rate of 100 ° C./hour.
  • Example 7 Amorphous silica particles containing calcium were prepared by thermal spraying. 0.25% by mass of lithium carbonate particles in terms of oxide is mixed with the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and the calcium contained in the amorphous silica particles is It was 0.24% by mass in terms of oxide.
  • the temperature was raised to 900 ° C. (Example 7), 1000 ° C. (Example 8), and 1100 ° C. (Example 9) at a heating rate of 300 ° C./hour, and held for 6 hours. Except for the above, the heat treatment was performed in the same manner as in Example 1.
  • Example 10 to Example 12 Amorphous silica particles containing calcium were prepared by thermal spraying. 0.25% by mass of lithium carbonate particles in terms of oxide is mixed with the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and calcium contained in the amorphous silica particles is mixed. Was 0.66% by mass in terms of oxide. Then, the temperature was raised to 900 ° C. (Example 10), 1000 ° C. (Example 11), and 1100 ° C. (Example 12) at a heating rate of 300 ° C./hour, and held for 6 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
  • Example 13 Amorphous silica particles containing calcium were prepared by thermal spraying. Calcium contained in the amorphous silica particles by mixing 0.05% by mass of lithium carbonate particles in terms of oxide with the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide. Was 0.66% by mass in terms of oxide. After that, the temperature was raised to 925 ° C. in Example 13 and to 1080 ° C. in Example 14 at a heating rate of 300 ° C./hour. Then, the heat treatment was carried out in the same manner as in Example 1 except that it was held for 6 hours in Example 13 and for 24 hours in Example 14.
  • Example 15 Amorphous silica particles containing calcium were prepared by thermal spraying. 0.10% by mass (Example 15) and 0.02% by mass (implementation) of lithium carbonate particles in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide.
  • Example 16 After mixing, the amount of calcium contained in the amorphous silica particles was 0.66% by mass in terms of oxide. After that, the temperature was raised to 925 ° C. in Example 15 and to 950 ° C. in Example 16 at a heating rate of 300 ° C./hour. After that, heat treatment was performed in the same manner as in Example 1 except that the mixture was held for 6 hours.
  • Amorphous silica particles were prepared by thermal spraying. After mixing calcium hydroxide particles and lithium carbonate particles with the spherical amorphous silica particles, the particles are filled in an alumina container and used in an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.) under an atmospheric atmosphere (atmospheric pressure). ) Was heat-treated.
  • the mixing amount of calcium hydroxide is 0.48% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica, the mass of calcium converted to oxide, and the mass of lithium converted to oxide.
  • the mixing amount of lithium was 0.04% by mass (Example 17), 0.06% by mass (Example 18), 0.08% by mass (Example 19), and 0.10% by mass (implementation) in terms of oxides.
  • Example 20 The heating rate was 300 ° C./hour, the temperature was raised to 925 ° C., and the temperature was maintained for 12 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
  • Example 21 Amorphous silica particles containing calcium and lithium were prepared by thermal spraying.
  • the spherical amorphous silica particles were filled in an alumina container and heat-treated in an atmospheric atmosphere (atmospheric pressure) using an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.).
  • Calcium contained in the amorphous silica particles was 0.82% by mass in terms of oxide, and lithium was 0.08% by mass in terms of oxide.
  • the temperature was raised to 950 ° C. (Example 21) and 1050 ° C. (Example 22) at a rate of temperature rise of 300 ° C./hour, and maintained for 24 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
  • amorphous silica particles containing lithium were produced by thermal spraying. After mixing the calcium compound particles with the spherical amorphous silica particles, the spherical amorphous silica particles are filled in an alumina container and used in an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.) to create an atmospheric atmosphere. The heat treatment was performed in the range of 850 ° C to 1150 ° C under the pressure (atmosphere).
  • Example 1 Amorphous silica particles containing 0.004% by mass of calcium in terms of oxide were prepared by thermal spraying. The heat treatment was performed in the same manner as in Example 1 except that the lithium carbonate particles were not mixed with the spherical amorphous silica particles, and then the temperature was raised to 900 ° C. at 300 ° C./hour and held for 6 hours. went.
  • Example 2 Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.004% by mass in terms of physical substances, and then the temperature was raised to 1200 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
  • Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.24% by mass in terms of physical substances, and then the temperature was raised to 1200 ° C. (Comparative Example 3) and 800 ° C. (Comparative Example 4) at 300 ° C./hour, and the temperature was maintained for 6 hours. The heat treatment was performed in the same manner as in 1.
  • Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized.
  • the temperature was set to 0.0014% by mass in terms of physical substances, and then the temperature was raised to 900 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
  • Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed in an oxide equivalent of 0.01% by mass with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized.
  • the temperature was set to 0.66% by mass in terms of physical substances, and then the temperature was raised to 925 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
  • Example 7 Amorphous silica particles containing 0.66% by mass of calcium in terms of metal were prepared by thermal spraying. The heat treatment was performed in the same manner as in Example 1 except that the lithium carbonate particles were not mixed with the spherical amorphous silica particles, and then the temperature was raised to 1100 ° C. at 300 ° C./hour and held for 6 hours. went.
  • the abundance ratio of amorphous and crystalline silica of the silica particles obtained by heat treatment, the type of crystalline silica, and the ratio thereof were determined by XRD.
  • an X-ray diffractometer "D2 PHASER” manufactured by Bruker
  • Quantitative analysis of the crystal phase by the Rietveld method was performed by the crystal structure analysis software "TOPAS” (manufactured by Bruker).
  • the circularity was determined by the flow type particle image analysis method.
  • a flow type particle image analyzer "FPIA-3000" manufactured by Spectris was used.
  • the content of impurity elements such as lithium and calcium in the spherical silica particles of the present invention was measured by ICP mass spectrometry (ICP-MS). Specifically, it was measured using ICP-MS (“7700X” manufactured by Agilent) in accordance with JIS-K0133. An aqueous solution in which silica particles were completely dissolved with hydrofluoric acid was used as a sample. Here, the content of the impurity element contained in the silica particles was defined as the content of the impurity element in the silica solution. For the calibration curve, a base solution containing only reagents was used.
  • the average particle size (D50) of the spherical quartz particles was measured by a laser diffraction / scattering type particle size distribution measuring method.
  • a laser diffraction / scattering type particle size distribution measuring device "CILAS920" manufactured by Cyrus was used.
  • the lithium content is in the range of 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and the phase of crystalline silica is used.
  • the ratio of the crystalline silica phase to the spherical crystalline silica particles was 40.0% or more, and the proportion of quartz in the crystalline silica phase was 80% by mass or more.
  • the spherical crystalline silica particles of the examples according to the present invention had a circularity of 0.83 to 0.95.
  • the average particle size of the spherical amorphous silica particles containing 0.004% by mass of calcium in terms of oxide was 35.1 ⁇ m, whereas the spherical crystalline silica particles of the present invention using this raw material had an average particle size of 35.1 ⁇ m. , 35.2 ⁇ m to 35.6 ⁇ m.
  • the average particle size of the spherical amorphous silica particles containing 0.24% by mass of calcium was 33.8 ⁇ m, whereas the spherical crystalline silica particles of the present invention using this raw material had an average particle size of 33.3 ⁇ m or more. It was 33.9 ⁇ m.
  • the spherical amorphous silica particles containing 0.66% by mass of calcium in terms of oxide were 41.1 ⁇ m, whereas the spherical crystalline silica particles of the present invention using this raw material were 40. It was 9 ⁇ m to 41.5 ⁇ m. Further, a mixture obtained by mixing a calcium raw material containing 0.48% by mass of calcium in terms of oxide and a lithium raw material containing 0.04 to 0.10% by mass of lithium in terms of oxide with amorphous silica particles.
  • the average particle size of the spherical amorphous silica particles was 32.3 ⁇ m, whereas the spherical crystalline silica particles of the present invention using this mixed raw material powder had 31. It was 6 ⁇ m to 35.1 ⁇ m. Further, in the spherical amorphous silica particles containing 0.82% by mass and 0.08% by mass, respectively, of calcium and lithium in terms of oxide, the average particle size was 21.5 ⁇ m, whereas this raw material.
  • the spherical crystalline silica particles of the present invention using the above were 20.3 ⁇ m and 21.9 ⁇ m.
  • Example 1 to Example 3 and Comparative Example 2 Further, comparing Example 7 to Example 9 and Comparative Example 3, the cristobalite content increases when the heat treatment temperature becomes high, and in the phase of crystalline silica at 1200 ° C. It can be seen that the proportion of quartz is less than 80% by mass. Further, comparing Examples 7 to 9 with Comparative Example 4, crystallization does not proceed at a heat treatment temperature of 800 ° C., and the ratio of the phase of crystalline silica in the spherical crystalline silica particles is less than 40%. I understand.
  • the preferred heat treatment temperature is 850 ° C to 1150 ° C. A more preferable temperature range is 875 ° C to 1100 ° C.
  • the zinc content of the spherical crystalline silica particles used in the examples and comparative examples of the present invention is less than 1.0 ppm in terms of metal content, and the total of alkali metals (K and Na) other than lithium is a metal.
  • the total amount of alkaline earth metals (Mg + Ba) other than calcium was 1.8 to 42 ppm, and that of aluminum metal was 90 to 4552 ppm.
  • the spherical crystalline silica particles of the present invention are not limited to the semiconductor encapsulating material, and can be used for other purposes. Specifically, it can also be used as a prepreg for printed circuit boards, various engineering plastics, and the like.

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Abstract

(Problem) To provide: spherical silica particles which are suitable for use as a filler for a semiconductor sealing material having excellent dielectric properties in the millimeter wave band, i.e., spherical crystalline silica particles which are reduced in the contents of an alkali metal and an alkaline earth metal to lower levels and have a high crystallization rate and a high quartz content; and a method for producing the spherical crystalline silica particles. (Solution) Provided are spherical crystalline silica particles each having a degree of circularity of 0.80 or more, containing lithium in an amount of 0.02% by mass or more and less than 0.40% by mass in terms of oxide content, also containing calcium in an amount of 0.004% by mass or more and less than 1.0% by mass in terms of oxide content, and also containing a crystalline silica phase, in which the content ratio of the crystalline silica phase in the spherical crystalline silica particles is 40.0% or more, and the content ratio of quarts in the crystalline silica phase is 80.0% by mass or more.

Description

球状結晶質シリカ粒子およびその製造方法Spherical crystalline silica particles and their manufacturing method
 本発明は、球状結晶質シリカ粒子およびその製造方法、特に、石英の割合が高い球状結晶質シリカ粒子およびその製造方法に関する。 The present invention relates to spherical crystalline silica particles and a method for producing the same, particularly spherical crystalline silica particles having a high proportion of quartz and a method for producing the same.
 通信技術の高度化に伴う情報量の増大、ミリ波レーダ等のミリ波帯域の急速な利用拡大等により、周波数の高周波数化が進行している。これらの高周波信号を伝送する回路基板は、回路パターンとなる電極と誘電体基板から構成されている。高周波信号の伝送の際のエネルギー損失を抑えるためには、誘電体材料の誘電正接(tanδ)が小さいことが必要となる。低誘電損とするには、誘電体材料は低極性および低双極子モーメントを有していなければならない。 The frequency is increasing due to the increase in the amount of information due to the sophistication of communication technology and the rapid expansion of the use of millimeter wave bands such as millimeter wave radar. The circuit board that transmits these high-frequency signals is composed of an electrode and a dielectric board that form a circuit pattern. In order to suppress energy loss during transmission of high-frequency signals, it is necessary that the dielectric loss tangent (tan δ) of the dielectric material is small. For low dielectric loss, the dielectric material must have low polarity and a low dipole moment.
 誘電体材料としては、主にセラミックス粒子、樹脂およびそれらを複合させた複合体が用いられている。特に、近年のミリ波帯域の利用拡大に伴い、より一層の低誘電正接(tanδ)のセラミックス粒子、および樹脂が求められている。樹脂は、比誘電率(εr)は比較的小さく高周波デバイスに適しているが、誘電正接(tanδ)や熱膨張係数はセラミックス粒子より大きい。このため、ミリ波帯域用のセラミック粒子と樹脂との複合体には、(1)セラミックス粒子自体の低誘電正接(tanδ)化、(2)セラミックス粒子を高充填し大きな誘電正接(tanδ)を示す樹脂の量を減らすことが適している。 As the dielectric material, ceramic particles, resins, and composites obtained by combining them are mainly used. In particular, with the recent expansion of the use of the millimeter wave band, ceramic particles and resins having a lower dielectric loss tangent (tan δ) are required. The resin has a relatively small relative permittivity (εr) and is suitable for high-frequency devices, but has a dielectric loss tangent (tan δ) and a coefficient of thermal expansion larger than those of ceramic particles. For this reason, the composite of the ceramic particles for the millimeter wave band and the resin is (1) made into a low dielectric loss tangent (tan δ) of the ceramic particles themselves, and (2) is highly filled with the ceramic particles and has a large dielectric loss tangent (tan δ). It is suitable to reduce the amount of resin shown.
 セラミックス粒子としてシリカ(SiO)粒子が従来から用いられている。シリカ粒子の形状が、角張った形状であると、樹脂中での流動性、分散性、充填性が悪くなり、また製造装置の摩耗も進む。これらを改善するため、球状のシリカ粒子が広く用いられている。球状シリカ粒子は真球に近いほど、樹脂中の充填性、流動性、および耐金型磨耗性が向上すると考えられ、真円度の高い粒子が追求されてきた。さらに、粒子の粒度分布の適正化を図ることによる一層の充填性の向上も検討されてきた。 Silica (SiO 2 ) particles have been conventionally used as ceramic particles. If the shape of the silica particles is angular, the fluidity, dispersibility, and filling property in the resin are deteriorated, and the manufacturing equipment is also worn. In order to improve these, spherical silica particles are widely used. It is considered that the closer the spherical silica particles are to a true sphere, the better the filling property, fluidity, and mold wear resistance in the resin, and particles having high roundness have been pursued. Furthermore, further improvement of filling property has been studied by optimizing the particle size distribution of the particles.
 一般的に、球状シリカの製法として溶射法が用いられている。溶射では、粒子を火炎などの高温領域中に通すことにより、粒子が融解し、粒子の形状は表面張力により球状となる。融解球状化された粒子は、粒子どうしが融着しないように気流搬送して回収されるが、溶射後の粒子は急冷される。溶融状態から急冷されるため、シリカは結晶化せず、非晶質(アモルファス)構造を有し、一般に石英ガラスと呼ばれるガラス状の粒子となる。 Generally, the thermal spraying method is used as a method for producing spherical silica. In thermal spraying, the particles are melted by passing them through a high temperature region such as a flame, and the shape of the particles becomes spherical due to surface tension. The melted spheroidized particles are collected by airflow so that the particles do not fuse with each other, but the particles after thermal spraying are rapidly cooled. Since silica is rapidly cooled from the molten state, silica does not crystallize, has an amorphous structure, and becomes glass-like particles generally called quartz glass.
 溶射法による球状シリカ粒子は非晶質であるため、その熱膨張率および熱伝導率は低い。非晶質シリカ粒子の熱膨張率は、0.5ppm/Kであり、熱伝導率は1.4W/mKである。これらの物性は、結晶構造を有さず非晶質(アモルファス)構造を有する石英ガラスの熱膨張率と概ね同等である。概して、ICチップの主原料となるSiの熱膨張率は3~5ppm/Kであり、ICチップを封止するための封止樹脂の熱膨張率はSiに比べて極めて大きいので、両材料(Siと封止樹脂)の熱膨張挙動の差異によりICチップに反りが生じて生産に支障をきたす。一方、熱膨張率の大きな樹脂に熱膨張率の小さな球状シリカを高充填する場合、封止材(球状シリカと樹脂の複合体)自体の熱膨張を下げる効果が得られる。封止材の熱膨張率をSiに近い値とすることで、ICチップを封止する際の熱膨張挙動に起因する変形を抑えることができる。 Since the spherical silica particles produced by the thermal spraying method are amorphous, their thermal expansion rate and thermal conductivity are low. The coefficient of thermal expansion of the amorphous silica particles is 0.5 ppm / K, and the thermal conductivity is 1.4 W / mK. These physical properties are substantially the same as the coefficient of thermal expansion of quartz glass having an amorphous structure without having a crystal structure. Generally, the coefficient of thermal expansion of Si, which is the main raw material of the IC chip, is 3 to 5 ppm / K, and the coefficient of thermal expansion of the sealing resin for encapsulating the IC chip is extremely larger than that of Si. Due to the difference in thermal expansion behavior between Si and the sealing resin, the IC chip warps, which hinders production. On the other hand, when a resin having a large coefficient of thermal expansion is highly filled with spherical silica having a small coefficient of thermal expansion, the effect of reducing the thermal expansion of the sealing material (composite of spherical silica and resin) itself can be obtained. By setting the coefficient of thermal expansion of the encapsulant to a value close to Si, it is possible to suppress deformation due to the thermal expansion behavior when encapsulating the IC chip.
 以上述べてきたとおり、封止材用シリカ粒子に求められる特性としては、樹脂に大量に配合して複合体としての性能を維持できる充填性、流動性、および耐金型磨耗性等に加えて、ミリ波帯域の高周波の優れた誘電特性である。誘電特性は、材質の物性値であるため非晶質シリカ粒子の誘電正接を低減させることは困難であった。 As described above, the characteristics required for silica particles for encapsulants include filling property, fluidity, and mold abrasion resistance, which can be blended in a large amount with a resin to maintain the performance as a composite. , Excellent dielectric properties of high frequencies in the millimeter wave band. Since the dielectric property is a physical property value of the material, it is difficult to reduce the dielectric loss tangent of the amorphous silica particles.
 特許文献1には、平均粒径が0.1~20μmのシリカゲルに対して、Zn化合物をZnO換算で0.5質量%以上添加し、この混合物を900~1100℃で熱処理することを特徴とする主結晶相がクオーツからなる多孔質粉体の製造方法が記載されている。 Patent Document 1 is characterized in that a Zn compound is added in an amount of 0.5% by mass or more in terms of ZnO to silica gel having an average particle size of 0.1 to 20 μm, and this mixture is heat-treated at 900 to 1100 ° C. A method for producing a porous powder having a main crystal phase of quartz is described.
 特許文献2には、非晶質の球状シリカ粒子に、アルカリ金属の化合物を、前記非晶質球状シリカ粒子の質量と前記アルカリ金属を酸化物換算した質量の合計の質量に対して、酸化物換算で0.4~5質量%の割合で混合し、またはアルカリ土類金属を前記非晶質球状シリカ粒子の質量と前記アルカリ土類金属を酸化物換算した質量の合計の質量に対して、酸化物換算で1~5質量%混合された球状シリカ粒子を800℃~1300℃で熱処理し、熱処理された球状シリカ粒子を冷却する工程を含み、冷却された球状シリカ粒子が、90質量%以上の結晶相を有し、かつ石英結晶が全体の70質量%以上であることを特徴とする球状結晶質シリカ粒子の製造方法が示されている。但し、アルカリ金属添加量0.4質量%未満、アルカリ土類金属1質量%未満では石英の出現確率が低くなる。 Patent Document 2 describes an oxide of an alkali metal compound in amorphous spherical silica particles with respect to the total mass of the mass of the amorphous spherical silica particles and the mass of the alkali metal converted into oxides. Mix at a ratio of 0.4 to 5% by mass in terms of, or with respect to the total mass of the alkaline earth metal in terms of the mass of the amorphous spherical silica particles and the alkali earth metal in terms of oxide. Spherical silica particles mixed in an oxide equivalent of 1 to 5% by mass are heat-treated at 800 ° C. to 1300 ° C. to cool the heat-treated spherical silica particles, and the cooled spherical silica particles are 90% by mass or more. A method for producing spherical crystalline silica particles, which has the crystal phase of the above and is characterized in that the amount of quartz crystals is 70% by mass or more of the whole, is shown. However, if the amount of alkali metal added is less than 0.4% by mass and the amount of alkaline earth metal is less than 1% by mass, the appearance probability of quartz is low.
 非特許文献1には、合成した非晶質の球状シリカにアルカリ金属酸化物を系統的に加えペレット状に成形したのち熱処理を行い添加物による結晶化と相転移の影響を検討したものである。これによると添加物が酸化リチウム(LiO)の場合、0.5質量%以上添加し、800℃以上に焼成すると石英が得られることが示されている。 In Non-Patent Document 1, alkali metal oxides are systematically added to the synthesized amorphous spherical silica to form pellets, and then heat treatment is performed to examine the effects of crystallization and phase transition due to the additives. .. According to this, when the additive is lithium oxide (Li 2 O), it is shown that quartz can be obtained by adding 0.5% by mass or more and firing at 800 ° C. or higher.
 非特許文献2では、シリカ物質の結晶化および相転移に及ぼす陽イオンの影響を調べたものである。この中で、合成した非晶質シリカに質量で10%のLiClを添加し、800℃で熱処理を行い石英が最も優勢な相として出現することが示されている。 Non-Patent Document 2 investigates the effect of cations on the crystallization and phase transition of silica substances. Among them, it has been shown that quartz appears as the most dominant phase by adding 10% LiCl by mass to the synthesized amorphous silica and heat-treating it at 800 ° C.
特開2002-20111号公報Japanese Unexamined Patent Publication No. 2002-20111 国際公開第2018/186308号International Publication No. 2018/186308
 本発明者らは、周波数が30GHz~80GHzのミリ波帯域において優れた誘電特性を有する半導体封止用フィラー粒子の探求と、それらを樹脂に混合した高周波デバイス用途の樹脂複合体の作製を目指した。その結果、低誘電正接の樹脂複合体を得るには、先ず、球状の溶融(非晶質)シリカを、熱処理し結晶化させることが有効であることを見出した。すなわち結晶質シリカは、ミリ波帯域(30GHz~80GHZ)での誘電正接が、従来広く使用されてきた非晶質シリカに比べて大幅に低下することを確認した。この結果、球状の結晶質シリカ粒子は、高周波デバイス用途として優れた誘電特性を示すシリカ粒子となる。熱処理で得られる結晶質シリカは、石英、クリストバライトもしくはその混合物である。石英とクリストバライトで物性値が異なるので、フィラーとして使用する場合は、結晶質シリカの相は単一相であることが好ましい。 The present inventors have aimed to search for filler particles for semiconductor encapsulation having excellent dielectric properties in the millimeter-wave band having a frequency of 30 GHz to 80 GHz, and to fabricate a resin composite for high-frequency devices by mixing them with a resin. .. As a result, it was found that it is effective to first heat-treat and crystallize spherical molten (amorphous) silica in order to obtain a resin composite having a low dielectric loss tangent. That is, it was confirmed that the dielectric loss tangent in the millimeter wave band (30 GHz to 80 GHz) of crystalline silica is significantly lower than that of amorphous silica which has been widely used in the past. As a result, the spherical crystalline silica particles become silica particles exhibiting excellent dielectric properties for high-frequency device applications. The crystalline silica obtained by heat treatment is quartz, cristobalite or a mixture thereof. Since quartz and cristobalite have different physical characteristics, the crystalline silica phase is preferably a single phase when used as a filler.
 また、クリストバライトに結晶化した場合には、クリストバライトの熱膨張係数が熱処理前の3倍以上になり、さらに、250℃近傍に変極点を有することから使用上の様々な問題が発生する。特に、半導体封止用のフィラーとして用いる場合、半導体素子との熱膨張挙動のミスマッチに起因して素子と封止材の界面に剥離が発生してしまう。このような用途に対しては結晶質シリカの中でも、熱膨張の変極点が実装温度域外にある石英が適している。石英を半導体封止用のフィラーとして使用すると低誘電損失化および適度な熱膨張率化を図りつつ実装信頼性の向上を図ることができる。 Further, when crystallized into cristobalite, the coefficient of thermal expansion of cristobalite becomes more than three times that before the heat treatment, and further, since it has a pole near 250 ° C., various problems in use occur. In particular, when used as a filler for semiconductor encapsulation, peeling occurs at the interface between the element and the encapsulant due to a mismatch in thermal expansion behavior with the semiconductor element. Among crystalline silicas, quartz whose thermal expansion pole is outside the mounting temperature range is suitable for such applications. When quartz is used as a filler for semiconductor encapsulation, it is possible to improve the mounting reliability while achieving a low dielectric loss and an appropriate coefficient of thermal expansion.
 球状の非晶性シリカを結晶化させて石英を得る方法として、特許文献1には、亜鉛化合物を酸化物換算で0.5質量%以上添加し、この混合物を900~1100℃で熱処理することが開示されている。しかし、本発明者らによる再現試験の結果、950℃以下の熱処理温度では結晶化自体は進行せず非晶質シリカのままであった。950℃を超えて熱処理を行った場合、結晶化が進行し始めるものの、1100℃でも結晶化度は約20%にとどまった。また出現する結晶相はクリストバライトが主相であり、石英の単一相を高い含有量で得ることができなかった。 As a method for obtaining quartz by crystallizing spherical amorphous silica, in Patent Document 1, 0.5% by mass or more of a zinc compound is added in terms of oxide, and this mixture is heat-treated at 900 to 1100 ° C. Is disclosed. However, as a result of the reproduction test by the present inventors, crystallization itself did not proceed at the heat treatment temperature of 950 ° C. or lower, and it remained amorphous silica. When the heat treatment was performed above 950 ° C, crystallization started to proceed, but the crystallinity remained at about 20% even at 1100 ° C. In addition, the crystal phase that appeared was mainly cristobalite, and a single phase of quartz could not be obtained with a high content.
 特許文献2には、アルカリ土類金属を酸化物換算した質量の合計の質量に対して、酸化物換算で1~5質量%混合された球状シリカ粒子を800℃~1300℃で熱処理し、熱処理された球状シリカ粒子を冷却する工程を含み、冷却された球状シリカ粒子が、90質量%以上の結晶相を有し、かつ石英結晶が全体の70質量%以上であることを特徴とする球状結晶質シリカ粒子の製造方法が示されている。実施例ではアルカリ土類金属としてカルシウムが示されているが、比較例であるカルシウムを酸化物換算で0.5質量%添加し、1100℃の熱処理した場合においては、石英出現が30%未満と低い。またこれまでカルシウムを酸化物換算で1質量%未満添加した場合は、石英含有率の高い球状結晶質シリカは得られていない。 In Patent Document 2, spherical silica particles mixed in an oxide equivalent of 1 to 5% by mass with respect to the total mass of the alkali earth metal in terms of oxide are heat-treated at 800 ° C to 1300 ° C. Spherical crystals comprising a step of cooling the cooled spherical silica particles, wherein the cooled spherical silica particles have a crystal phase of 90% by mass or more, and the quartz crystals are 70% by mass or more of the whole. A method for producing quality silica particles is shown. Calcium is shown as an alkaline earth metal in the examples, but when 0.5% by mass of calcium, which is a comparative example, is added and heat-treated at 1100 ° C., the appearance of quartz is less than 30%. Low. Further, when calcium is added in an amount of less than 1% by mass in terms of oxide, spherical crystalline silica having a high quartz content has not been obtained so far.
 また、特許文献2、非特許文献1、非特許文献2では、同様にリチウムが石英結晶化促進元素として示されている。特許文献2にはリチウム酸化物換算で0.4~5質量%の割合で混合し、800℃~1300℃で熱処理することが示されている。非特許文献1では、合成した非晶質の球状シリカに酸化リチウム0.5質量%以上添加し、800℃以上に焼成すると石英が得られることが示されている。さらに非特許文献2には合成した非晶質シリカに10質量%の塩化リチウム(LiCl)を添加し、800℃で熱処理を行い石英が最優勢な相として出現することが示されている。 Further, in Patent Document 2, Non-Patent Document 1, and Non-Patent Document 2, lithium is similarly shown as a quartz crystallization promoting element. Patent Document 2 discloses that the mixture is mixed at a ratio of 0.4 to 5% by mass in terms of lithium oxide and heat-treated at 800 ° C to 1300 ° C. Non-Patent Document 1 shows that quartz can be obtained by adding 0.5% by mass or more of lithium oxide to the synthesized amorphous spherical silica and firing it at 800 ° C. or higher. Further, Non-Patent Document 2 shows that 10% by mass of lithium chloride (LiCl) is added to the synthesized amorphous silica and heat-treated at 800 ° C. to allow quartz to appear as the most dominant phase.
 しかしカルシウムなどのアルカリ土類金属や、リチウムなどのアルカリ金属は、半導体封止材への添加元素としては好ましくない。半導体素子正常動作、実装信頼性維持という観点ではアルカリ土類金属、アルカリ金属元素の添加量を低減させる必要がある。 However, alkaline earth metals such as calcium and alkali metals such as lithium are not preferable as additives to the semiconductor encapsulant. From the viewpoint of normal operation of semiconductor devices and maintenance of mounting reliability, it is necessary to reduce the amount of alkaline earth metal and alkali metal element added.
 非晶質シリカの結晶化に影響を及ぼす因子として、温度、圧力、不純物元素がよく知られている。圧力の影響については、例えば非特許文献3に、2~3万気圧下で300℃~1200℃で熱処理を行うと石英に結晶化することが記載されているが、数万気圧の加圧装置は処理量に制限があり、工業的に大量生産を行うことが困難であることから好ましくない。これまで、温度、不純物元素を変動因子にした結晶化実験の報告は多くあるものの、結晶質シリカの含有率が40%以上、かつ前記結晶質シリカにおける石英割合が80質量%以上である球状結晶質シリカは得られていない。半導体素子正常動作および実装信頼性維持という観点からは、リチウムおよびカルシウムを酸化物換算でそれぞれ0.40質量%未満、1.0質量%未満に低減させつつ、高い結晶化率、かつ実質的に石英単相からなるシリカ粒子を得ることが求められていた。 Temperature, pressure, and impurity elements are well known as factors that affect the crystallization of amorphous silica. Regarding the influence of pressure, for example, Non-Patent Document 3 describes that when heat treatment is performed at 300 ° C to 1200 ° C under 20,000 to 30,000 atm, it crystallizes into quartz, but a pressurizing device at tens of thousands of atmospheres. Is not preferable because the amount of processing is limited and it is difficult to carry out mass production industrially. Although there have been many reports of crystallization experiments using temperature and impurity elements as variable factors, spherical crystals having a crystalline silica content of 40% or more and a quartz ratio of 80% by mass or more in the crystalline silica have been reported so far. No quality silica has been obtained. From the viewpoint of normal operation of semiconductor devices and maintenance of mounting reliability, lithium and silica are reduced to less than 0.40% by mass and less than 1.0% by mass in terms of oxides, respectively, while having a high crystallization rate and substantially. It has been required to obtain silica particles composed of a single quartz phase.
 本発明は、ミリ波帯域において優れた誘電特性を有する半導体封止材用のフィラー用途として好適な球状シリカ粒子、すなわち、アルカリ金属およびアルカリ土類金属の含有量を低く抑えつつ、高い結晶化率で、かつ石英の割合が高い、球状結晶質シリカ粒子、及び、その製造方法を提供することを目的とする。 INDUSTRIAL APPLICABILITY The present invention has a high crystallization rate while keeping the content of spherical silica particles, that is, alkali metal and alkaline earth metal, suitable as fillers for semiconductor encapsulants having excellent dielectric properties in the millimeter wave band low. It is an object of the present invention to provide spherical crystalline silica particles having a high proportion of quartz and a method for producing the same.
 本願発明者は上記課題を解決することを目的とし鋭意研究した。その結果、円形度が0.80以上である非晶質シリカ粒子からなる粉体に、カルシウムを酸化物換算で0.004以上1.0質量%未満含有するカルシウム原料、および、リチウムを酸化物換算で0.02質量%以上0.40質量%未満含有するリチウム原料、の両方を混合した混合原料粉体を、熱処理温度850℃~1150℃で、加熱することで、リチウムおよびカルシウムのそれぞれの含有量を従来に比べて低減させつつ、石英結晶化を促進させることに成功した。特定の理論に拘束されるものではないが、シリカ中にリチウム金属およびカルシウム金属が同時添加されることで石英結晶化に対して相乗効果を発揮し、各元素を単独添加した場合に比べて添加量を低減させたにも関わらず、石英の結晶化は促進したものと考えられる。850~1150℃の熱処理により得られる結晶質シリカ粒子は結晶質シリカの相を含み、当該結晶質シリカの相は実質的に石英単相である。ここで言う単相とは、結晶質シリカの相における石英の割合が80質量%以上を指し、好ましくは、85.0質量%以上、さらに好ましくは90.0質量%以上である。 The inventor of the present application has studied diligently for the purpose of solving the above problems. As a result, the powder composed of amorphous silica particles having a circularity of 0.80 or more contains a calcium raw material containing 0.004 or more and less than 1.0% by mass of calcium in terms of oxide, and lithium as an oxide. By heating a mixed raw material powder obtained by mixing both a lithium raw material containing 0.02% by mass or more and less than 0.40% by mass in terms of heat at a heat treatment temperature of 850 ° C to 1150 ° C, each of lithium and calcium can be obtained. We succeeded in promoting quartz crystallization while reducing the content compared to the conventional method. Although not bound by a specific theory, the simultaneous addition of lithium metal and calcium metal to silica exerts a synergistic effect on quartz crystallization, and is added compared to the case where each element is added alone. It is considered that the crystallization of quartz was promoted despite the reduction of the amount. The crystalline silica particles obtained by the heat treatment at 850 to 1150 ° C. contain a crystalline silica phase, and the crystalline silica phase is substantially a quartz single phase. The term "single phase" as used herein means that the proportion of quartz in the crystalline silica phase is 80% by mass or more, preferably 85.0% by mass or more, and more preferably 90.0% by mass or more.
本発明により以下の球状シリカ粒子およびその製造方法が提供される。
(1) 円形度が0.80以上であり、リチウムを酸化物換算で0.02質量%以上0.40質量%未満含有し、カルシウムを酸化物換算で0.004質量%以上1.0質量%未満含有し、結晶質シリカの相を含んでなる、球状結晶質シリカ粒子であって、当該球状結晶質シリカ粒子における前記結晶質シリカの相の割合が40.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が80.0質量%以上である球状結晶質シリカ粒子。
(2) 前記結晶質シリカの相の割合が70.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が85.0質量%以上である(1)に記載の球状結晶質シリカ粒子。
(3) 前記結晶質シリカの相の割合が80.0%以上であり、かつ結晶質シリカの相に占める石英の割合が90.0質量%以上である前記(2)に記載の球状結晶質シリカ粒子。
(4) 平均粒径(D50)が3~100μmである前記(1)~(3)のいずれか1つに記載の球状結晶質シリカ粒子。
(5)(1)~(4)のいずれか1つに記載の球状結晶質シリカ粒子の製造方法であって、円形度が0.80以上である球状非晶質シリカ粒子に、カルシウム原料およびリチウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
(6)(1)~(4)のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
円形度が0.80以上で、且つ、カルシウム成分を含む球状非晶質シリカ粒子に、リチウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
(7)(1)~(4)のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
円形度が0.80以上で、且つ、リチウム成分を含む球状非晶質シリカ粒子に、カルシウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
(8)(1)~(4)のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
円形度が0.80以上で、且つ、カルシウム成分及びリチウム成分を含む球状非晶質シリカ粒子を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
(9)前記熱処理の温度が、875℃~1110℃である、(5)~(8)のいずれか1項に記載の球状結晶質シリカ粒子の製造方法。
The present invention provides the following spherical silica particles and a method for producing the same.
(1) The circularity is 0.80 or more, lithium is contained in an oxide equivalent of 0.02% by mass or more and less than 0.40% by mass, and calcium is contained in an oxide equivalent of 0.004% by mass or more and 1.0% by mass. % Of the spherical crystalline silica particles containing the crystalline silica phase, the ratio of the crystalline silica phase to the spherical crystalline silica particles is 40.0% or more, and the above-mentioned Spherical crystalline silica particles in which the proportion of quartz in the crystalline silica phase is 80.0% by mass or more.
(2) The spherical crystalline material according to (1), wherein the ratio of the crystalline silica phase is 70.0% or more, and the ratio of quartz to the crystalline silica phase is 85.0% by mass or more. Silica particles.
(3) The spherical crystalline material according to (2) above, wherein the ratio of the crystalline silica phase is 80.0% or more, and the ratio of quartz to the crystalline silica phase is 90.0% by mass or more. Silica particles.
(4) The spherical crystalline silica particle according to any one of (1) to (3) above, wherein the average particle size (D50) is 3 to 100 μm.
(5) The method for producing spherical crystalline silica particles according to any one of (1) to (4), which comprises a spherical amorphous silica particles having a circularity of 0.80 or more, a calcium raw material, and a calcium raw material. A method for producing spherical crystalline silica particles, which comprises heat-treating a mixed raw material powder obtained by mixing a lithium raw material at 850 ° C to 1150 ° C.
(6) The method for producing spherical crystalline silica particles according to any one of (1) to (4).
It comprises heat-treating a mixed raw material powder obtained by mixing a lithium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component at 850 ° C to 1150 ° C. A method for producing spherical crystalline silica particles.
(7) The method for producing spherical crystalline silica particles according to any one of (1) to (4).
The present invention comprises heat-treating a mixed raw material powder obtained by mixing a calcium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a lithium component at 850 ° C to 1150 ° C. A method for producing spherical crystalline silica particles.
(8) The method for producing spherical crystalline silica particles according to any one of (1) to (4).
A method for producing spherical crystalline silica particles, which comprises heat-treating spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component and a lithium component at 850 ° C to 1150 ° C.
(9) The method for producing spherical crystalline silica particles according to any one of (5) to (8), wherein the heat treatment temperature is 875 ° C to 1110 ° C.
 本発明によれば、ミリ波帯域において優れた誘電特性を有する半導体封止材用のフィラー用途として好適な球状シリカ粒子、すなわち、アルカリ金属およびアルカリ土類金属の含有量を低く抑えつつ、高い結晶化率で、かつ石英の割合が高い、球状結晶質シリカ粒子、及び、その製造方法を提供することができる。 According to the present invention, spherical silica particles suitable for use as a filler for semiconductor encapsulants having excellent dielectric properties in the millimeter wave band, that is, high crystals while keeping the content of alkali metal and alkaline earth metal low. It is possible to provide spherical crystalline silica particles having a high crystallization rate and a high proportion of quartz, and a method for producing the same.
図1は、熱処理前の非晶質シリカおよび本発明の一態様のシリカ(熱処理後)のXRDパターンである。FIG. 1 is an XRD pattern of amorphous silica before heat treatment and silica (after heat treatment) according to one aspect of the present invention.
 本発明の一態様による球状結晶質シリカは、円形度が0.80以上であり、リチウムを酸化物換算で0.02質量%以上0.40質量%未満含有し、カルシウムを酸化物換算で0.004質量%以上1.0質量%未満含有し、結晶質シリカの相を含んでなる、球状結晶質シリカ粒子であって、当該球状結晶質シリカ粒子における前記結晶質シリカの相の割合が40.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が80.0質量%以上である球状結晶質シリカ粒子である。ここで言う、結晶質シリカの相が40.0%以上とは、球状結晶質シリカ粒子における結晶質シリカの相の割合のことで、その求め方については、後述する。 The spherical crystalline silica according to one aspect of the present invention has a circularity of 0.80 or more, contains lithium in an oxide equivalent of 0.02% by mass or more and less than 0.40% by mass, and contains calcium in an oxide equivalent of 0. Spherical crystalline silica particles containing .004% by mass or more and less than 1.0% by mass and containing a crystalline silica phase, wherein the ratio of the crystalline silica phase to the spherical crystalline silica particles is 40. Spherical crystalline silica particles having a content of 0.0% or more and a ratio of quartz in the crystalline silica phase of 80.0% by mass or more. The phase of crystalline silica referred to here is 40.0% or more is the ratio of the phase of crystalline silica to the spherical crystalline silica particles, and the method for obtaining the phase will be described later.
 シリカ(SiO)の結晶構造としては、クリストバライト、石英等がある。これらの結晶構造を有するシリカは非晶質シリカと比べると、高い熱伝導率を有する。このため、半導体封止用フィラーにおいて、非晶質シリカを、結晶質シリカに適切な量、置き換えることで、ICチップからの放熱性を向上させることができる。さらに結晶質シリカはミリ波帯域での誘電正接が低いことから、半導体封止用フィラーにおいて非晶質シリカを結晶質シリカに多く置き換えるほど半導体封止材の誘電正接は低下する。 The crystal structure of silica (SiO 2 ) includes cristobalite, quartz and the like. Silica having these crystal structures has a higher thermal conductivity than amorphous silica. Therefore, in the filler for semiconductor encapsulation, the heat dissipation from the IC chip can be improved by replacing amorphous silica with crystalline silica in an appropriate amount. Further, since crystalline silica has a low dielectric loss tangent in the millimeter wave band, the dielectric loss tangent of the semiconductor encapsulant decreases as more amorphous silica is replaced with crystalline silica in the semiconductor encapsulating filler.
 [球状結晶質シリカ粒子の製造方法]
 本発明の球状結晶質シリカ粒子は、球状非晶質シリカを、カルシウム原料およびリチウム原料の両方と混合し、当該混合物(混合原料ともいう)を熱処理して製造wしてもよい。
 一態様によれば、カルシウム成分を含む球状非晶質シリカ粒子に、リチウム原料を混合して得られた混合原料を熱処理して製造してもよい。
 または、リチウム成分を含む球状非晶質シリカ粒子に、カルシウム原料を混合して得られた混合原料を熱処理して製造してもよい。
 あるいは、カルシウム成分及びリチウム成分を含む球状非晶質シリカ粒子を熱処理して製造してもよい。
[Manufacturing method of spherical crystalline silica particles]
The spherical crystalline silica particles of the present invention may be produced by mixing spherical amorphous silica with both a calcium raw material and a lithium raw material and heat-treating the mixture (also referred to as a mixed raw material).
According to one aspect, a mixed raw material obtained by mixing a lithium raw material with spherical amorphous silica particles containing a calcium component may be heat-treated.
Alternatively, the mixed raw material obtained by mixing the calcium raw material with the spherical amorphous silica particles containing a lithium component may be heat-treated.
Alternatively, it may be produced by heat-treating spherical amorphous silica particles containing a calcium component and a lithium component.
 (球状非晶質シリカ粒子)
 原料となる非晶質の球状シリカ粒子は、溶射法などの方法により作製することができる。溶射法では、粉砕して所望の粒径に調整した天然シリカ粉体を、火炎中を通過させることにより、粒子が融解し、粒子の形状は表面張力により球状となる。このような溶射法によって、円形度0.80以上の球状非晶質シリカ粒子を作製することができる。
 球状非晶質シリカ粒子の組成は、主成分がシリカであって、最終的に得られる球状結晶質シリカ粒子が所望の範囲になるものであれば、特に限定はされない。一態様として、球状非晶質シリカ粒子の組成は、98.0質量%以上がシリカ(SiO)であってもよい、また、微量含有元素として、Ca、Li、Al、Na、Mg、Ba、Zn等を含んでもよい。一態様では、球状非晶質シリカ粒子の組成が、Znを0.5質量%未満含んでもよい。
(Spherical amorphous silica particles)
Amorphous spherical silica particles as a raw material can be produced by a method such as a thermal spraying method. In the thermal spraying method, natural silica powder pulverized and adjusted to a desired particle size is passed through a flame to melt the particles, and the shape of the particles becomes spherical due to surface tension. By such a thermal spraying method, spherical amorphous silica particles having a circularity of 0.80 or more can be produced.
The composition of the spherical amorphous silica particles is not particularly limited as long as the main component is silica and the finally obtained spherical crystalline silica particles are in a desired range. As one aspect, the composition of the spherical amorphous silica particles may be 98.0% by mass or more of silica (SiO 2 ), and Ca, Li, Al, Na, Mg, Ba as trace-containing elements. , Zn and the like may be included. In one aspect, the composition of the spherical amorphous silica particles may contain less than 0.5% by weight of Zn.
 (カルシウム原料)
 カルシウム原料は、球状非晶質シリカ粒子と混合され、熱処理される。カルシウム原料の組成、混合量は、最終的に得られる球状結晶質シリカ粒子が、所望の範囲になるものであれば、特に限定されず、適宜調整される。カルシウム原料は、大気中で安定して存在する水酸化カルシウムや酸化カルシウム等であってもよく、天然鉱物であってもよい。カルシウム原料は、球状非晶質シリカ粒子と均一に混合されるように、粉体や水溶液等の状態で添加することができる。また、カルシウム原料の少なくとも一部が、球状非晶質シリカ粒子に含有される微量元素であってもよい。例えば、球状非晶質シリカ粒子が、十分にカルシウムを含有しており、最終的に得られる球状結晶質シリカ粒子で所望のカルシウム含有量となるのであれば、球状非晶質シリカ粒子をカルシウム原料と兼用してもよい。また、球状非晶質シリカ粒子が、カルシウムを含むが、十分ではない場合、最終的に得られる球状結晶質シリカ粒子で所望のカルシウム含有量となるように、カルシウム原料を添加することができる。
(Calcium raw material)
The calcium raw material is mixed with spherical amorphous silica particles and heat-treated. The composition and mixing amount of the calcium raw material are not particularly limited as long as the finally obtained spherical crystalline silica particles are in a desired range, and are appropriately adjusted. The calcium raw material may be calcium hydroxide, calcium oxide or the like that are stably present in the atmosphere, or may be natural minerals. The calcium raw material can be added in the form of powder, aqueous solution or the like so as to be uniformly mixed with the spherical amorphous silica particles. Further, at least a part of the calcium raw material may be a trace element contained in the spherical amorphous silica particles. For example, if the spherical amorphous silica particles sufficiently contain calcium and the finally obtained spherical crystalline silica particles have a desired calcium content, the spherical amorphous silica particles can be used as a calcium raw material. May be combined with. Further, when the spherical amorphous silica particles contain calcium but are not sufficient, a calcium raw material can be added so that the finally obtained spherical crystalline silica particles have a desired calcium content.
 (リチウム原料)
 リチウム原料は、球状非晶質シリカ粒子と混合され、熱処理される。リチウム原料の組成、混合量は、最終的に得られる球状結晶質シリカ粒子が、所望の範囲になるものであれば、特に限定されず、適宜調整される。リチウム原料は、酸化物、炭酸化物、水酸化物、硝酸化物など、添加する形態は特に制限されない。非晶質の球状シリカ粒子と均一に混合されるように、粉体や水溶液等の状態で添加することができる。また、リチウム原料の少なくとも一部が、球状非晶質シリカ粒子に含有される微量元素であってもよい。例えば、球状非晶質シリカ粒子が、十分にリチウムを含有しており、最終的に得られる球状結晶質シリカ粒子で所望のリチウム含有量となるのであれば、球状非晶質シリカ粒子をリチウム原料と兼用してもよい。また、球状非晶質シリカ粒子が、リチウムを含むが、十分ではない場合、最終的に得られる球状結晶質シリカ粒子で所望のリチウム含有量となるように、カルシウム原料を添加することができる。
(Lithium raw material)
The lithium raw material is mixed with spherical amorphous silica particles and heat-treated. The composition and mixing amount of the lithium raw material are not particularly limited as long as the finally obtained spherical crystalline silica particles are in a desired range, and are appropriately adjusted. The form of adding the lithium raw material, such as an oxide, a carbonic acid oxide, a hydroxide, and a nitric acid oxide, is not particularly limited. It can be added in the form of a powder, an aqueous solution, or the like so as to be uniformly mixed with the amorphous spherical silica particles. Further, at least a part of the lithium raw material may be a trace element contained in the spherical amorphous silica particles. For example, if the spherical amorphous silica particles sufficiently contain lithium and the finally obtained spherical crystalline silica particles have a desired lithium content, the spherical amorphous silica particles can be used as a lithium raw material. May be combined with. Further, when the spherical amorphous silica particles contain lithium but are not sufficient, a calcium raw material can be added so that the finally obtained spherical crystalline silica particles have a desired lithium content.
 (混合)
 球状非晶質シリカ粒子は、カルシウム原料およびリチウム原料の両方と混合される。なお、カルシウム原料および/またはリチウム原料は、球状非晶質シリカに含有されるものであってもよい。混合する手法は、混合物中で各原料が均等に分散して混合されるものであれば、特に限定されない。混合は粉体ミキサーにより行ってもよい。混合により、球状非晶質シリカの少なくとも一部に、カルシウム原料およびリチウム原料が接触し、続く熱処理工程で、球状非晶質シリカの結晶化、特に石英への結晶化が促進される。
 混合の際は、製造される球状結晶質シリカ粒子に含有されるリチウムが酸化物換算で0.02質量%以上0.40質量%未満になるように、且つ、含有されるカルシウムが酸化物換算で0.004質量%以上1.0質量%未満になるように、それぞれの原料を配合して混合する。なお、配合したリチウム原料やカルシウム原料の全量が、製造される球状結晶質シリカ粒子中に含有される訳ではないので、含有される率を考慮して配合することが好ましい。
 なお、混合は、球状非晶質シリカの少なくとも一部に、カルシウム原料およびリチウム原料を接触させるものであり、球状非晶質シリカの粉砕を促進するものではないので、その円形度は、混合の前後でほとんど低下しない。
(mixture)
The spherical amorphous silica particles are mixed with both a calcium raw material and a lithium raw material. The calcium raw material and / or the lithium raw material may be contained in spherical amorphous silica. The mixing method is not particularly limited as long as each raw material is evenly dispersed and mixed in the mixture. Mixing may be performed by a powder mixer. By mixing, the calcium raw material and the lithium raw material come into contact with at least a part of the spherical amorphous silica, and in the subsequent heat treatment step, the crystallization of the spherical amorphous silica, particularly the crystallization into quartz, is promoted.
At the time of mixing, the lithium contained in the produced spherical crystalline silica particles is 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and the calcium contained is in terms of oxide. Each raw material is mixed and mixed so as to be 0.004% by mass or more and less than 1.0% by mass. Since the total amount of the blended lithium raw material and calcium raw material is not contained in the produced spherical crystalline silica particles, it is preferable to blend them in consideration of the content ratio.
In addition, since the mixing is such that the calcium raw material and the lithium raw material are brought into contact with at least a part of the spherical amorphous silica and does not promote the pulverization of the spherical amorphous silica, the circularity thereof is the mixing. There is almost no decrease before and after.
 (熱処理)
 球状非晶質シリカ粒子とカルシウム原料とリチウム原料とを混合した混合原料を熱処理する温度は、850℃~1150℃の温度範囲で行う。熱処理時の雰囲気は、大気などの酸化雰囲気および窒素やアルゴンなどの不活性ガス雰囲気で行うことができる。雰囲気圧は、工業的に大量に熱処理することから大気圧が好ましい。熱処理温度は、850℃より低いと結晶化が進行しないか、もしくは著しく遅い。一方、1150℃よりも高温であると、クリストバライトの結晶化が石英結晶化と競争的に進行する。その結果、実質的な石英単相である球状結晶質シリカ粒子を得ることができなくなる。ここで実質的な単相とは、球状結晶質シリカ粒子に含まれる結晶質シリカの相において80質量%以上を石英相が占める状態を指す。好ましくは、熱処理温度は、875℃~1110℃である。
(Heat treatment)
The temperature for heat-treating the mixed raw material obtained by mixing the spherical amorphous silica particles, the calcium raw material and the lithium raw material is in the temperature range of 850 ° C to 1150 ° C. The atmosphere during the heat treatment can be an oxidizing atmosphere such as the atmosphere and an inert gas atmosphere such as nitrogen or argon. Atmospheric pressure is preferably atmospheric pressure because it is industrially heat-treated in large quantities. If the heat treatment temperature is lower than 850 ° C., crystallization does not proceed or is extremely slow. On the other hand, when the temperature is higher than 1150 ° C., the crystallization of cristobalite proceeds competitively with the quartz crystallization. As a result, it becomes impossible to obtain spherical crystalline silica particles which are substantially single-phase quartz. Here, the substantially single phase refers to a state in which the quartz phase occupies 80% by mass or more in the crystalline silica phase contained in the spherical crystalline silica particles. Preferably, the heat treatment temperature is 875 ° C to 1110 ° C.
 所望の結晶化度を得られるように、熱処理の時間は適宜調整することができる。リチウム元素とカルシウム元素が球状非晶質シリカ粒子に均一に共に存在すると、単一の元素が存在する場合よりも、二元素の相乗効果により球状非晶質シリカ粒子の石英結晶化が進行する。本発明の一態様では、リチウムは、リチウム原料として(炭酸リチウム等)混合時に添加されてもよく、球状非晶質シリカ粒子に予め含まれてもよい。また、カルシウムは、カルシウム原料(酸化カルシウム等)として混合時に供給されてもよく、球状非晶質シリカ粒子に予め含まれていてもよい。このリチウムやカルシウムが、加熱工程による拡散により球状非晶質シリカ粒子に均一に存在するために、球状非晶質シリカ粒子全体が石英に結晶化すると考えられる。このため、熱処理時間は長くなるほど、リチウムやカルシウムは球状非晶質シリカ粒子内に拡散するため結晶化は進行する。典型的には、言い換えると、昇降温速度が60℃/時より大きい場合、結晶化進行は実質的に熱処理温度、つまり、最高温度での保持時間で決まるため結晶化の制御は最高温度での保持時間を調整すればよい。その場合、熱処理時間は、概ね1時間から48時間の範囲で調整してもよく、十分に結晶化を促進する観点から3時間以上でもよく、6時間以上でもよい。また、熱処理時間を過度に延長しても結晶化度が飽和してくるので、コスト低減の観点から熱処理時間は25時間以下でもよく、18時間以下でもよく、12時間以下でもよい。
 また、熱処理温度が高くなると球状非晶質シリカ粒子内でのリチウム元素の拡散係数は、大きくなるため、石英結晶化が進行する。ただし、1150℃を超えると、クリストバライト相が競争的に出現し、石英が単相でなくなるため熱処理温度には上限がある。
 また、拡散の程度は、リチウム原料やカルシウム原料の種類および添加量により変わるため、それらに応じて好適な熱処理の時間および温度を適宜選択してもよい。
 なお、昇温速度や、冷却速度は、電気炉で熱処理を行う場合、球状結晶質シリカ粒子の出現には大きな影響を与えない。
The time of the heat treatment can be appropriately adjusted so that the desired degree of crystallinity can be obtained. When the lithium element and the calcium element are uniformly present together in the spherical amorphous silica particles, the quartz crystallization of the spherical amorphous silica particles proceeds due to the synergistic effect of the two elements as compared with the case where a single element is present. In one aspect of the present invention, lithium may be added as a lithium raw material (lithium carbonate or the like) at the time of mixing, or may be contained in the spherical amorphous silica particles in advance. Further, calcium may be supplied as a calcium raw material (calcium oxide or the like) at the time of mixing, or may be contained in the spherical amorphous silica particles in advance. Since the lithium and calcium are uniformly present in the spherical amorphous silica particles due to diffusion by the heating step, it is considered that the entire spherical amorphous silica particles crystallize into quartz. Therefore, as the heat treatment time becomes longer, lithium and calcium diffuse into the spherical amorphous silica particles, so that crystallization proceeds. Typically, in other words, when the ascending / descending temperature is greater than 60 ° C./hour, the crystallization progress is substantially determined by the heat treatment temperature, i.e., the retention time at maximum temperature, so crystallization control is at maximum temperature. The holding time may be adjusted. In that case, the heat treatment time may be adjusted in the range of approximately 1 hour to 48 hours, and may be 3 hours or more or 6 hours or more from the viewpoint of sufficiently promoting crystallization. Further, since the crystallinity is saturated even if the heat treatment time is excessively extended, the heat treatment time may be 25 hours or less, 18 hours or less, or 12 hours or less from the viewpoint of cost reduction.
Further, as the heat treatment temperature increases, the mass diffusivity of the lithium element in the spherical amorphous silica particles increases, so that quartz crystallization proceeds. However, when the temperature exceeds 1150 ° C., the cristobalite phase appears competitively and quartz is no longer a single phase, so that there is an upper limit to the heat treatment temperature.
Further, since the degree of diffusion varies depending on the type and amount of the lithium raw material and the calcium raw material added, a suitable heat treatment time and temperature may be appropriately selected according to them.
The rate of temperature rise and the rate of cooling do not significantly affect the appearance of spherical crystalline silica particles when the heat treatment is performed in an electric furnace.
 本発明の球状結晶質シリカの円形度は、結晶化のための熱処理の前後でほとんど低下しない。本発明の球状結晶質シリカ粒子は、850℃~1150℃での熱処理で比較的低温で結晶質にされたものであり、この温度範囲では円形度はほとんど低下しない。非晶質のシリカ粒子は1100℃を超えると融着または焼結により結合することがあるが、本発明の球状結晶質シリカ粒子は850℃~1150℃で結晶質にされたものである(すでに非晶質でない)ため融着や焼結により粒子同士が結合することが完全に抑制できる。 The circularity of the spherical crystalline silica of the present invention hardly decreases before and after the heat treatment for crystallization. The spherical crystalline silica particles of the present invention are crystallized at a relatively low temperature by heat treatment at 850 ° C to 1150 ° C, and the circularity hardly decreases in this temperature range. Amorphous silica particles may be bonded by fusion or sintering when the temperature exceeds 1100 ° C., but the spherical crystalline silica particles of the present invention are crystallized at 850 ° C to 1150 ° C (already). Since it is not amorphous), it is possible to completely suppress the bonding of particles due to fusion or sintering.
 [球状結晶質シリカ粒子]
 (円形度)
 本発明の球状結晶質シリカ粒子は、円形度が0.80以上である。
 円形度が0.80未満であると、半導体封止材用の樹脂複合組成物のシリカ粒子等として利用する場合に、流動性、分散性、充填性が十分でなく、また封止材作製用機器の摩耗が促進される場合がある。溶射で得られた球状非晶質シリカ粒子の平均円形度は0.80以上であってよい。結晶化のための熱処理工程での温度は、850~1150℃であるので、熱処理前後でシリカ粒子の円形度はほとんど変化しない。そして溶射法であれば、容易に平均円形度の高い粒子を得ることができる。この結果、本発明の方法では、所望する円形度の高い球状結晶質シリカ粒子を実現できる。流動性、分散性、充填性の向上や機器の摩耗低減の観点から、円形度は高いほど好ましく、0.85以上でもよく、0.90以上でもよい。一方で、円形度が1.0、すなわち完全な円形にすることは困難な場合があるので、円形度の上限を0.99以下または0.97以下であってもよい。
[Spherical crystalline silica particles]
(Circularity)
The spherical crystalline silica particles of the present invention have a circularity of 0.80 or more.
When the circularity is less than 0.80, the fluidity, dispersibility, and filling property are not sufficient when used as silica particles or the like of a resin composite composition for a semiconductor encapsulant, and the encapsulant is produced. Equipment wear may be accelerated. The average circularity of the spherical amorphous silica particles obtained by thermal spraying may be 0.80 or more. Since the temperature in the heat treatment step for crystallization is 850 to 1150 ° C., the circularity of the silica particles hardly changes before and after the heat treatment. If it is a thermal spraying method, particles having a high average circularity can be easily obtained. As a result, the method of the present invention can realize desired spherical crystalline silica particles having a high degree of circularity. From the viewpoint of improving fluidity, dispersibility, filling property, and reducing wear of equipment, the higher the circularity is, the more preferable it is, and it may be 0.85 or more, or 0.90 or more. On the other hand, since it may be difficult to make the circularity 1.0, that is, a perfect circle, the upper limit of the circularity may be 0.99 or less or 0.97 or less.
 円形度は、「撮影粒子投影面積相当円の周囲長÷撮影粒子像の周囲長」で求められ、この値が1に近づくほど真球に近づくことを意味する。本発明の円形度はフロー式粒子像分析法により求めた。フロー式粒子像分析法では、球状結晶質シリカ粒子を液体に流して粒子の静止画像として撮像し、得られた粒子像を基に画像解析を行い、球状結晶質シリカ粒子の円形度を求める。これら複数の円形度の平均値を平均円形度とした。フロー式粒子像分析法により平均円形度を測定する際の粒子個数は、少なすぎると正しく平均値を得ることができない。少なくとも粒子100個以上は必要で、好ましくは500個以上、よりこの好ましくは、1000個以上である。本発明では、フロー式粒子像分析装置「FPIA-3000」(スペクトリス社製)を用いて、約100個の粒子を用いた。なお、球状非晶質シリカ粒子についても、同様にその円形度を求める。 The circularity is obtained by "perimeter of the circle corresponding to the projected area of the photographed particle ÷ perimeter of the image of the photographed particle", and it means that the closer this value is to 1, the closer to the true sphere. The circularity of the present invention was determined by a flow-type particle image analysis method. In the flow-type particle image analysis method, spherical crystalline silica particles are flowed into a liquid and imaged as a still image of the particles, and image analysis is performed based on the obtained particle image to obtain the circularity of the spherical crystalline silica particles. The average value of these plurality of circularities was defined as the average circularity. If the number of particles when measuring the average circularity by the flow type particle image analysis method is too small, the average value cannot be obtained correctly. At least 100 or more particles are required, preferably 500 or more, and more preferably 1000 or more. In the present invention, about 100 particles were used by using the flow type particle image analyzer "FPIA-3000" (manufactured by Spectris). The circularity of the spherical amorphous silica particles is also determined in the same manner.
 (組成)
 本発明の、球状結晶質シリカ粒子は、当該シリカ粒子の質量を基準(100質量%)として、リチウムを酸化物換算で0.02質量%以上0.40質量%未満、カルシウムを酸化物換算で0.004質量%以上1.0質量%未満含有する。リチウムの好ましい下限は0.05質量%であり、より好ましくは0.10質量%であり、さらに好ましくは0.25質量%であってもよい。また、リチウムの好ましい上限は0.35質量%未満であり、より好ましくは0.30質量%未満であってもよい。カルシウムの好ましい下限は0.20質量%であり、より好ましくは0.6質量%であってもよい。また、カルシウムの好ましい上限は0.9質量%であり、より好ましくは0.8質量%であってもよい。リチウムおよびカルシウムの含有量は、例えば原子吸光法、ICP質量分析(ICP-MS)により測定することができる。具体的には、JIS-K0133に準拠し、ICP-MS(アジレント製「7700X」)を用いて測定した。フッ化水素酸によりシリカ粒子を完全溶解させた水溶液を試料として用いた。ここでは、シリカ粒子中に含まれる不純物元素含有量を、シリカ溶解液中の不純物元素含有量とした。検量線は、試薬のみのベース液を用いてもよい。上記の範囲のリチウムおよびカルシウムを含有するような組成で、特定の熱処理を行なうことにより、高い結晶化率で、かつ実質的に石英の割合が高い、単相からなる球状結晶質シリカ粒子を得ることができる。リチウムおよびカルシウムは、結晶化させるための850~1150℃の温度範囲の熱処理を通じて、ほぼ酸化物の形態で存在するようになり、その後、シリカと反応してシリカ構造中にリチウムやカルシウムは取り込まれていき、前記温度範囲の熱処理の前後でそれらの含有量はほとんど変らない。熱処理前後で、リチウムおよびカルシウムの含有量が変化する場合、変化の程度を考慮して、最終的に得られる球状結晶質シリカ粒子で所定のリチウムおよびカルシウム含有量となるように、原料の組成を適宜調整することができる。
(composition)
In the spherical crystalline silica particles of the present invention, based on the mass of the silica particles (100% by mass), lithium is 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and calcium is converted into oxide. It contains 0.004% by mass or more and less than 1.0% by mass. The lower limit of lithium is preferably 0.05% by mass, more preferably 0.10% by mass, and even more preferably 0.25% by mass. Further, the upper limit of lithium is preferably less than 0.35% by mass, and more preferably less than 0.30% by mass. The preferable lower limit of calcium is 0.20% by mass, and more preferably 0.6% by mass. Further, the upper limit of calcium is preferably 0.9% by mass, and more preferably 0.8% by mass. The content of lithium and calcium can be measured, for example, by atomic absorption spectrometry, ICP mass spectrometry (ICP-MS). Specifically, it was measured using ICP-MS (“7700X” manufactured by Agilent) in accordance with JIS-K0133. An aqueous solution in which silica particles were completely dissolved with hydrofluoric acid was used as a sample. Here, the content of the impurity element contained in the silica particles was defined as the content of the impurity element in the silica solution. As the calibration curve, a base solution containing only reagents may be used. By performing a specific heat treatment with a composition containing lithium and calcium in the above range, spherical crystalline silica particles composed of a single phase having a high crystallization rate and a substantially high proportion of quartz can be obtained. be able to. Lithium and calcium become almost in the form of oxides through heat treatment in the temperature range of 850 to 1150 ° C. for crystallization, after which they react with silica to incorporate lithium and calcium into the silica structure. The content thereof does not change much before and after the heat treatment in the above temperature range. When the lithium and calcium contents change before and after the heat treatment, the composition of the raw materials is adjusted so that the finally obtained spherical crystalline silica particles have the predetermined lithium and calcium contents in consideration of the degree of the change. It can be adjusted as appropriate.
 (結晶の性状)
 本発明の、球状結晶質シリカ粒子は、結晶質シリカの相を含んでおり、当該球状結晶質シリカ粒子における前記結晶相シリカの相の割合が40.0 %以上であり、かつ前記結晶質シリカの相に占める石英の割合が80.0質量%以上である。
 熱処理で得られたシリカ粒子が非晶質および結晶質シリカから構成される場合、非晶質と結晶質シリカの存在割合(いわゆる「結晶化度」を指し、本明細書でそのように呼称することがある)ならびに結晶質シリカ種類と、その割合は、XRDで求めることができる。XRD測定では、結晶質ピークの積分強度の和(Ic)と非晶質のハロー部分の積分強度(Ia)から、以下の式で計算することにより結晶相の割合を求めることができる。より具体的には、球状結晶質シリカ粒子に含まれる結晶質シリカの相の割合を求めることができる。
 X(結晶相割合)=Ic/(Ic+Ia)×100   (%)
本発明では、2Θ=10°~90°の範囲でXRD測定を実施した。当該2Θ測定範囲に現れる結晶質ピーク強度の和と、2Θ=22°付近に出現するブロードな非晶質に起因するハロー部分の積分強度から結晶相割合を求めた。
 さらに、クリストバライト、石英等の結晶相の種類およびそれぞれの割合(質量%)は、X線回折により定量分析することで求めることができる。本発明ではX線回折による定量分析を、リートベルト法による解析方法を用い、標準試料を用いずに定量分析を行った。本発明では、X線回折装置「D2 PHASER」(ブルカー社製)を用いた。リードベルト法による結晶相の定量分析は、結晶構造解析ソフトウエア「TOPAS」(ブルカー社製)にて行った。
(Crystal properties)
The spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the ratio of the phase of the crystalline phase silica to the spherical crystalline silica particles is 40.0% or more, and the crystalline silica is present. The proportion of quartz in the phase is 80.0% by mass or more.
When the silica particles obtained by the heat treatment are composed of amorphous and crystalline silica, it refers to the abundance ratio of amorphous and crystalline silica (so-called "crystallinity", and is referred to as such in the present specification. The type of crystalline silica and its ratio can be determined by XRD. In the XRD measurement, the ratio of the crystalline phase can be obtained by calculating from the sum of the integrated intensities of the crystalline peaks (Ic) and the integrated intensities of the amorphous halo portion (Ia) by the following formula. More specifically, the ratio of the phase of crystalline silica contained in the spherical crystalline silica particles can be obtained.
X (crystal phase ratio) = Ic / (Ic + Ia) × 100 (%)
In the present invention, XRD measurement was carried out in the range of 2Θ = 10 ° to 90 °. The crystal phase ratio was obtained from the sum of the crystalline peak intensities appearing in the 2Θ measurement range and the integrated intensity of the halo portion due to the broad amorphous appearing near 2Θ = 22 °.
Further, the types of crystal phases such as cristobalite and quartz and their respective ratios (mass%) can be obtained by quantitative analysis by X-ray diffraction. In the present invention, the quantitative analysis by X-ray diffraction was performed by using the analysis method by the Rietveld method, and the quantitative analysis was performed without using a standard sample. In the present invention, an X-ray diffractometer "D2 PHASER" (manufactured by Bruker) was used. Quantitative analysis of the crystal phase by the Rietveld method was performed by the crystal structure analysis software "TOPAS" (manufactured by Bruker).
 本発明の球状結晶質シリカ粒子は、結晶質シリカの相を含んでおり、当該球状結晶質シリカ粒子における前記結晶質シリカの相の割合が40.0 %以上であり、すなわち、40.0%以上の高い結晶化度を有しており、誘電正接が非晶質シリカに比べて大幅に低く好ましい。誘電正接低減の観点から、結晶化度は高いほど好ましく、70.0%以上であってもよく、さらに好ましくは80.0%以上であってもよい。 The spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the ratio of the phase of the crystalline silica to the spherical crystalline silica particles is 40.0% or more, that is, 40.0%. It has the above-mentioned high crystallinity, and its dielectric positive contact is significantly lower than that of amorphous silica, which is preferable. From the viewpoint of reducing the dielectric loss tangent, the higher the crystallinity is, the more preferable it is, and it may be 70.0% or more, and more preferably 80.0% or more.
 本発明の球状結晶質シリカ粒子は、結晶質シリカの相を含み、当該結晶質シリカの相に占める石英の割合が高く、80.0質量%以上であり、実質的に石英単相である。そのため、球状結晶性シリカ粒子の熱膨張率、熱伝導率等の諸特性が、実質的に石英の特性によって決まり、つまり変動することがなく、フィラー等に用いる場合に好ましい。上記の観点から、石英の割合は高いほど好ましく、85.0質量%以上であってもよく、さらに好ましくは90.0質量%以上であってもよい。 The spherical crystalline silica particles of the present invention contain a phase of crystalline silica, and the proportion of quartz in the phase of the crystalline silica is high, 80.0% by mass or more, and is substantially a single quartz phase. Therefore, various characteristics such as the coefficient of thermal expansion and the thermal conductivity of the spherical crystalline silica particles are substantially determined by the characteristics of quartz, that is, they do not fluctuate, and are preferable when used as a filler or the like. From the above viewpoint, the higher the proportion of quartz, the more preferable it is, and it may be 85.0% by mass or more, and more preferably 90.0% by mass or more.
 (平均粒径)
 本発明の一態様では、球状結晶質シリカ粒子の平均粒径(D50)は、3~100μmであってもよい。平均粒径が3μm未満であると、粒子の凝集性が大きくなり流動性が著しく低下するため、好ましくない。平均粒径が100μmを超えると粒子間の空隙が残存しやすく充填性を上げることが困難となり、好ましくない。平均粒径が10~80μmの範囲が、より好ましい。 熱処理前の球状非晶質シリカ粒子は、850~1150℃の温度範囲の熱処理前後で粒径がほとんど変化しない。
(Average particle size)
In one aspect of the present invention, the average particle size (D50) of the spherical crystalline silica particles may be 3 to 100 μm. If the average particle size is less than 3 μm, the cohesiveness of the particles becomes large and the fluidity is remarkably lowered, which is not preferable. If the average particle size exceeds 100 μm, voids between the particles tend to remain and it becomes difficult to improve the filling property, which is not preferable. More preferably, the average particle size is in the range of 10 to 80 μm. The particle size of the spherical amorphous silica particles before the heat treatment hardly changes before and after the heat treatment in the temperature range of 850 to 1150 ° C.
 平均粒子径(D50)は、レーザー回折・散乱式粒度分布測定法により測定した、体積基準の粒度分布において、累積体積が50%のメジアン径D50を求めた。なお、レーザー回折・散乱式粒度分布測定法は、球状結晶質シリカ粒子を分散させた分散液にレーザー光を照射し、分散液から発せられる回折・散乱光の強度分布パターンから粒度分布を求める方法である。本発明では、レーザー回折・散乱式粒度分布測定装置「CILAS920」(シーラス社製)を用いた。なお、球状非晶質シリカ粒子についても、同様にその平均粒子径を求めることができる。 For the average particle size (D50), a median diameter D50 having a cumulative volume of 50% was determined in a volume-based particle size distribution measured by a laser diffraction / scattering type particle size distribution measurement method. The laser diffraction / scattering type particle size distribution measurement method is a method in which a dispersion liquid in which spherical crystalline silica particles are dispersed is irradiated with laser light, and the particle size distribution is obtained from the intensity distribution pattern of the diffraction / scattering light emitted from the dispersion liquid. Is. In the present invention, a laser diffraction / scattering type particle size distribution measuring device "CILAS920" (manufactured by Cirrus) was used. The average particle size of the spherical amorphous silica particles can be obtained in the same manner.
 (用途例)
 本発明によって、最終的に得られた球状結晶質シリカ粒子と樹脂との複合組成物、さらには樹脂複合組成物を硬化した樹脂複合体を製造することができる。樹脂複合組成物の組成について、以下に説明する。
(Application example)
INDUSTRIAL APPLICABILITY According to the present invention, it is possible to produce a composite composition of finally obtained spherical crystalline silica particles and a resin, and further a resin composite obtained by curing the resin composite composition. The composition of the resin composite composition will be described below.
 球状結晶質シリカ粒子と樹脂とを含むスラリー組成物を用いて、半導体封止材(特に固形封止材)、層間絶縁フィルム等の樹脂複合組成物を得ることができる。さらには、これらの樹脂複合体組成物を硬化させることで、封止材(硬化体)、半導体パッケージ用基板等の樹脂複合体を得ることができる。 A resin composite composition such as a semiconductor encapsulant (particularly a solid encapsulant) and an interlayer insulating film can be obtained by using a slurry composition containing spherical crystalline silica particles and a resin. Further, by curing these resin complex compositions, a resin complex such as a sealing material (cured body) and a substrate for a semiconductor package can be obtained.
 前記樹脂複合組成物を製造する場合、例えば、球状結晶質シリカ粒子及び樹脂の他に、硬化剤、硬化促進剤、難燃剤、シランカップリング剤等を必要により配合し、混錬等の公知の方法で複合化する。そして、ペレット状、フィルム状等、用途に応じて成型する。 In the case of producing the resin composite composition, for example, in addition to the spherical crystalline silica particles and the resin, a curing agent, a curing accelerator, a flame retardant, a silane coupling agent and the like are blended as necessary, and known for kneading and the like. Complex by method. Then, it is molded according to the application such as pellet form or film form.
 さらに、前記樹脂複合組成物を硬化して樹脂複合体を製造する場合、例えば、樹脂複合組成物に熱を加えて溶融して、用途に応じた形状に加工し、溶融時よりも高い熱を加えて完全に硬化させる。この場合、トランスファーモールド法等の公知の方法を使用することができる。  Further, when the resin composite composition is cured to produce a resin composite, for example, the resin composite composition is melted by applying heat to be processed into a shape suitable for the intended use, and the heat is higher than that at the time of melting. In addition, it is completely cured. In this case, a known method such as a transfer molding method can be used. It was
 例えば、パッケージ用基板や層間絶縁フィルム等の半導体関連材料を製造する場合には、樹脂複合組成物に使用する樹脂として、公知の樹脂が適用できるが、エポキシ樹脂を採用することが好ましい。エポキシ樹脂は、特に限定されないが、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビフェニル型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノキシ型エポキシ樹脂等を用いることができる。これらの中の1種類を単独で用いることもできるし、異なる分子量を有する2種類以上を併用することもできる。これらの中でも、硬化性、耐熱性等の観点から、1分子中にエポキシ基を2個以上有するエポキシ樹脂が好ましい。具体的には、ビフェニル型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂、フェノール類とアルデヒド類のノボラック樹脂をエポキシ化したもの、ビスフェノールA、ビスフェノールF及びビスフェノールS等のグリシジルエーテル、フタル酸やダイマー酸等の多塩基酸とエポクロルヒドリンとの反応により得られるグリシジルエステル酸エポキシ樹脂、線状脂肪族エポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、アルキル変性多官能エポキシ樹脂、β-ナフトールノボラック型エポキシ樹脂、1,6-ジヒドロキシナフタレン型エポキシ樹脂、2,7-ジヒドロキシナフタレン型エポキシ樹脂、ビスヒドロキシビフェニル型エポキシ樹脂、更には難燃性を付与するために臭素等のハロゲンを導入したエポキシ樹脂等が挙げられる。これら1分子中にエポキシ基を2個以上有するエポキシ樹脂中でも特にビスフェノールA型エポキシ樹脂が好ましい。 For example, when manufacturing a semiconductor-related material such as a packaging substrate or an interlayer insulating film, a known resin can be applied as the resin used for the resin composite composition, but it is preferable to use an epoxy resin. The epoxy resin is not particularly limited, but for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, naphthalene type epoxy resin, phenoxy type epoxy resin and the like. Can be used. One of these can be used alone, or two or more having different molecular weights can be used in combination. Among these, an epoxy resin having two or more epoxy groups in one molecule is preferable from the viewpoint of curability, heat resistance and the like. Specifically, biphenyl type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, epoxidized phenols and aldehydes novolak resin, glycidyl ether such as bisphenol A, bisphenol F and bisphenol S, Glycidyl ester acid epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, alkyl-modified polyfunctionality obtained by the reaction of polybasic acids such as phthalic acid and dimer acid with epochlorhydrin. Epoxy resin, β-naphthol novolac type epoxy resin, 1,6-dihydroxynaphthalene type epoxy resin, 2,7-dihydroxynaphthalene type epoxy resin, bishydroxybiphenyl type epoxy resin, bromine to impart flame retardancy, etc. Examples thereof include an epoxy resin into which the halogen of the above is introduced. Among the epoxy resins having two or more epoxy groups in one of these molecules, the bisphenol A type epoxy resin is particularly preferable.
 また、半導体封止材用複合材料以外の用途、例えば、プリント基板用のプリプレグ、各種エンジニアプラスチックス等の樹脂複合組成物に使用する樹脂としては、エポキシ系以外の樹脂も適用できる。具体的には、エポキシ樹脂の他には、シリコーン樹脂、フェノール樹脂、メラミン樹脂、ユリア樹脂、不飽和ポリエステル、フッ素樹脂、ポリイミド、ポリアミドイミド、ポリエーテルイミド等のポリアミド;ポリブチレンテレフタレート、ポリエチレンテレフタレート等のポリエステル;ポリフェニレンスルフィド、芳香族ポリエステル、ポリスルホン、液晶ポリマー、ポリエーテルスルホン、ポリカーボネート、マレイミド変成樹脂、ABS樹脂、AAS(アクリロニトリルーアクリルゴム・スチレン)樹脂、AES(アクリロニトリル・エチレン・プロピレン・ジエンゴム-スチレン)樹脂が挙げられる。
 樹脂複合組成物に用いられる硬化剤としては、前記樹脂を硬化するために、公知の硬化剤を用いればよいが、例えばフェノール系硬化剤を使用することができる。フェノール系硬化剤としては、フェノールノボラック樹脂、アルキルフェノールノボラック樹脂、ポリビニルフェノール類等を、単独あるいは2種以上組み合わせて使用することができる。
Further, as a resin used for a resin composite composition such as a prepreg for a printed circuit board and various engineer plastics for applications other than the composite material for a semiconductor encapsulant, a resin other than an epoxy-based resin can also be applied. Specifically, in addition to epoxy resin, polyamide such as silicone resin, phenol resin, melamine resin, urea resin, unsaturated polyester, fluororesin, polyimide, polyamideimide, polyetherimide, etc.; polybutylene terephthalate, polyethylene terephthalate, etc. Polyester; Polyphenylene sulfide, aromatic polyester, polysulfone, liquid crystal polymer, polyether sulfone, polycarbonate, maleimide modified resin, ABS resin, AAS (acrylonitrile-acrylic rubber / styrene) resin, AES (acrylonitrile / ethylene / propylene / diene rubber-styrene) ) Resin is mentioned.
As the curing agent used in the resin composite composition, a known curing agent may be used for curing the resin, but for example, a phenol-based curing agent can be used. As the phenol-based curing agent, a phenol novolac resin, an alkylphenol novolak resin, polyvinylphenols and the like can be used alone or in combination of two or more.
 前記フェノール硬化剤の配合量は、エポキシ樹脂との当量比(フェノール性水酸基当量/エポキシ基当量)が0.1以上、1.0未満が好ましい。これにより、未反応のフェノール硬化剤の残留がなくなり、吸湿耐熱性が向上する。 The compounding amount of the phenol curing agent is preferably 0.1 or more and less than 1.0 in the equivalent ratio (phenolic hydroxyl group equivalent / epoxy group equivalent) with the epoxy resin. As a result, the unreacted phenol curing agent does not remain, and the hygroscopic heat resistance is improved.
 本発明の球状結晶質シリカ粒子の、樹脂複合組成物における添加量は、耐熱性、熱膨張率の観点から、多いことが好ましいが、通常、70質量%以上95質量%以下、好ましくは80質量%以上95質量%以下、更に好ましくは85質量%以上95質量%以下であるのが適当である。これは、シリカ粉体の配合量が少なすぎると、封止材料の強度向上や熱膨張抑制などの効果が得られにくいためであり、また逆に多すぎると、シリカ粉体の表面処理に関わらず複合材料においてシリカ粉の凝集による偏析が起きやすく、複合材料の粘度も大きくなりすぎるなどの問題から、封止材料として実用が困難となるためである。 The amount of the spherical crystalline silica particles of the present invention added to the resin composite composition is preferably large from the viewpoint of heat resistance and coefficient of thermal expansion, but is usually 70% by mass or more and 95% by mass or less, preferably 80% by mass. % Or more and 95% by mass or less, more preferably 85% by mass or more and 95% by mass or less. This is because if the blending amount of the silica powder is too small, it is difficult to obtain effects such as improving the strength of the encapsulating material and suppressing thermal expansion, and conversely, if it is too large, it is related to the surface treatment of the silica powder. This is because segregation due to aggregation of silica powder is likely to occur in the composite material, and the viscosity of the composite material becomes too large, which makes it difficult to put it into practical use as a sealing material.
 また、シランカップリング剤については、公知のカップリング剤を用いればよいが、エポキシ系官能基を有するものが好ましい。 As the silane coupling agent, a known coupling agent may be used, but one having an epoxy-based functional group is preferable.
 以下の実施例・比較例を通じて、本発明について説明する。ただし、本発明は、以下の実施例に限定して解釈されるものではない。 The present invention will be described through the following examples and comparative examples. However, the present invention is not construed as being limited to the following examples.
(実施例1~実施例3)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子に炭酸リチウム粒子を混合した後、アルミナ製の容器に充填し、電気炉SUPER-BURN(株式会社モトヤマ社製)を用いて大気雰囲気下(大気圧)で熱処理した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウムの混合量は、酸化物換算で0.25質量%とし、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.004質量%とした。昇温速度は300℃/時で900℃(実施例1)、1000℃(実施例2)、1100℃(実施例3)まで昇温し、6時間保持した。その後、降温速度約100℃/時で室温まで冷却した。
(Examples 1 to 3)
Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles were mixed with the spherical amorphous silica particles, filled in an alumina container, and heat-treated in an air atmosphere (atmospheric pressure) using an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.). The mixing amount of lithium carbonate is 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and calcium contained in the amorphous silica particles. Was 0.004% by mass in terms of oxide. The temperature was raised to 900 ° C. (Example 1), 1000 ° C. (Example 2), and 1100 ° C. (Example 3) at a heating rate of 300 ° C./hour, and held for 6 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
(実施例4~実施例6)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。非晶質シリカ粒子に含まれるカルシウムは0.0040質量%とした。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウムを酸化物換算で、0.10質量%(実施例4)、0.07質量%(実施例5)、0.05質量%(実施例6)混合した。昇温速度は300℃/時で、930℃(実施例4)、1030℃(実施例5)、1130℃(実施例6)まで昇温し、6時間保持した。その後、昇温速度100℃/時で室温まで冷却した。
(Examples 4 to 6)
Amorphous silica particles containing calcium were prepared by thermal spraying. The amount of calcium contained in the amorphous silica particles was 0.0040% by mass. 0.10% by mass (Example 4) and 0.07% by mass (Example 4) of lithium carbonate in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide. 5), 0.05% by mass (Example 6) were mixed. The heating rate was 300 ° C./hour, the temperature was raised to 930 ° C. (Example 4), 1030 ° C. (Example 5), and 1130 ° C. (Example 6), and the temperature was maintained for 6 hours. Then, it was cooled to room temperature at a heating rate of 100 ° C./hour.
(実施例7~実施例9)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で0.25質量%を混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.24質量%とした。昇温速度は300℃/時で900℃(実施例7)、1000℃(実施例8)、1100℃(実施例9)まで昇温し、6時間保持した。以外は、実施例1と同様に熱処理を行った。
(Examples 7 to 9)
Amorphous silica particles containing calcium were prepared by thermal spraying. 0.25% by mass of lithium carbonate particles in terms of oxide is mixed with the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and the calcium contained in the amorphous silica particles is It was 0.24% by mass in terms of oxide. The temperature was raised to 900 ° C. (Example 7), 1000 ° C. (Example 8), and 1100 ° C. (Example 9) at a heating rate of 300 ° C./hour, and held for 6 hours. Except for the above, the heat treatment was performed in the same manner as in Example 1.
(実施例10~実施例12)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で、0.25質量%を混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.66質量%とした。その後、昇温速度は300℃/時で900℃(実施例10)、1000℃(実施例11)、1100℃(実施例12)まで昇温し、6時間保持した。その後、降温速度約100℃/時で室温まで冷却した。
(Example 10 to Example 12)
Amorphous silica particles containing calcium were prepared by thermal spraying. 0.25% by mass of lithium carbonate particles in terms of oxide is mixed with the total mass of the mass of spherical amorphous silica and the mass of lithium in terms of oxide, and calcium contained in the amorphous silica particles is mixed. Was 0.66% by mass in terms of oxide. Then, the temperature was raised to 900 ° C. (Example 10), 1000 ° C. (Example 11), and 1100 ° C. (Example 12) at a heating rate of 300 ° C./hour, and held for 6 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
(実施例13、実施例14)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で、0.05質量%を混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.66質量%とした。その後、昇温速度は300℃/時で実施例13では925℃まで昇温し、実施例14では1080℃まで昇温した。その後、実施例13では6時間、実施例14では24時間保持した以外は、実施例1と同様に熱処理を行った。
(Example 13, Example 14)
Amorphous silica particles containing calcium were prepared by thermal spraying. Calcium contained in the amorphous silica particles by mixing 0.05% by mass of lithium carbonate particles in terms of oxide with the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide. Was 0.66% by mass in terms of oxide. After that, the temperature was raised to 925 ° C. in Example 13 and to 1080 ° C. in Example 14 at a heating rate of 300 ° C./hour. Then, the heat treatment was carried out in the same manner as in Example 1 except that it was held for 6 hours in Example 13 and for 24 hours in Example 14.
(実施例15、実施例16)
カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で、0.10質量%(実施例15)、0.02質量%(実施例16)混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.66質量%とした。その後、昇温速度は300℃/時で実施例15では925℃まで昇温し、実施例16では950℃まで昇温した。その後6時間保持した以外は、実施例1と同様に熱処理を行った。
(Example 15, Example 16)
Amorphous silica particles containing calcium were prepared by thermal spraying. 0.10% by mass (Example 15) and 0.02% by mass (implementation) of lithium carbonate particles in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide. Example 16) After mixing, the amount of calcium contained in the amorphous silica particles was 0.66% by mass in terms of oxide. After that, the temperature was raised to 925 ° C. in Example 15 and to 950 ° C. in Example 16 at a heating rate of 300 ° C./hour. After that, heat treatment was performed in the same manner as in Example 1 except that the mixture was held for 6 hours.
(実施例17~実施例20)
 非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子に水酸化カルシウム粒子および炭酸リチウム粒子を混合した後、アルミナ製の容器に充填し、電気炉SUPER-BURN(株式会社モトヤマ社製)を用いて大気雰囲気下(大気圧)で熱処理した。球状非晶質シリカの質量とカルシウムを酸化物換算した質量とリチウムを酸化物換算した質量の合計の質量に対して、水酸化カルシウムの混合量は、酸化物換算で、0.48質量%炭酸リチウムの混合量は、酸化物換算で0.04質量%(実施例17)、0.06質量%(実施例18)、0.08質量%(実施例19)、0.10質量%(実施例20)とした。昇温速度は300℃/時で925℃まで昇温し、12時間保持した。その後、降温速度約100℃/時で室温まで冷却した。
(Examples 17 to 20)
Amorphous silica particles were prepared by thermal spraying. After mixing calcium hydroxide particles and lithium carbonate particles with the spherical amorphous silica particles, the particles are filled in an alumina container and used in an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.) under an atmospheric atmosphere (atmospheric pressure). ) Was heat-treated. The mixing amount of calcium hydroxide is 0.48% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica, the mass of calcium converted to oxide, and the mass of lithium converted to oxide. The mixing amount of lithium was 0.04% by mass (Example 17), 0.06% by mass (Example 18), 0.08% by mass (Example 19), and 0.10% by mass (implementation) in terms of oxides. Example 20). The heating rate was 300 ° C./hour, the temperature was raised to 925 ° C., and the temperature was maintained for 12 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
(実施例21、実施例22)
 カルシウムおよびリチウムを含む非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子を、アルミナ製の容器に充填し、電気炉SUPER-BURN(株式会社モトヤマ社製)を用いて大気雰囲気下(大気圧)で熱処理した。非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.82質量%とし、リチウムは酸化物換算で、0.08質量%とした。昇温速度は300℃/時で950℃(実施例21)、1050℃(実施例22)まで昇温し、24時間保持した。その後、降温速度約100℃/時で室温まで冷却した。
(Example 21, Example 22)
Amorphous silica particles containing calcium and lithium were prepared by thermal spraying. The spherical amorphous silica particles were filled in an alumina container and heat-treated in an atmospheric atmosphere (atmospheric pressure) using an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.). Calcium contained in the amorphous silica particles was 0.82% by mass in terms of oxide, and lithium was 0.08% by mass in terms of oxide. The temperature was raised to 950 ° C. (Example 21) and 1050 ° C. (Example 22) at a rate of temperature rise of 300 ° C./hour, and maintained for 24 hours. Then, the temperature was cooled to room temperature at a temperature lowering rate of about 100 ° C./hour.
 また、リチウムを含む非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子にカルシウム化合物粒子を混合した後、当該球状非晶質シリカ粒子を、アルミナ製の容器に充填し、電気炉SUPER-BURN(株式会社モトヤマ社製)を用いて大気雰囲気下(大気圧)で850℃~1150℃の範囲で熱処理した。 In addition, amorphous silica particles containing lithium were produced by thermal spraying. After mixing the calcium compound particles with the spherical amorphous silica particles, the spherical amorphous silica particles are filled in an alumina container and used in an electric furnace SUPER-BURN (manufactured by Motoyama Co., Ltd.) to create an atmospheric atmosphere. The heat treatment was performed in the range of 850 ° C to 1150 ° C under the pressure (atmosphere).
(比較例1)
カルシウムを酸化物換算で0.004質量%含む非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子に炭酸リチウム粒子を混合せずに、その後、昇温速度は300℃/時で900℃まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 1)
Amorphous silica particles containing 0.004% by mass of calcium in terms of oxide were prepared by thermal spraying. The heat treatment was performed in the same manner as in Example 1 except that the lithium carbonate particles were not mixed with the spherical amorphous silica particles, and then the temperature was raised to 900 ° C. at 300 ° C./hour and held for 6 hours. went.
(比較例2)
カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で0.25質量%混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.004質量%とし、その後、昇温速度は300℃/時で1200℃まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 2)
Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.004% by mass in terms of physical substances, and then the temperature was raised to 1200 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
(比較例3、比較例4)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で0.25質量%混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.24質量%とし、その後、昇温速度は300℃/時で1200℃(比較例3)、800℃(比較例4)まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 3, Comparative Example 4)
Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.24% by mass in terms of physical substances, and then the temperature was raised to 1200 ° C. (Comparative Example 3) and 800 ° C. (Comparative Example 4) at 300 ° C./hour, and the temperature was maintained for 6 hours. The heat treatment was performed in the same manner as in 1.
(比較例5)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で0.25質量%混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.0014質量%とし、その後、昇温速度は300℃/時で900℃まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 5)
Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed at 0.25% by mass in terms of oxide with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.0014% by mass in terms of physical substances, and then the temperature was raised to 900 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
(比較例6)
 カルシウムを含む非晶質シリカ粒子を溶射法で作製した。球状非晶質シリカの質量とリチウムを酸化物換算した質量の合計の質量に対して、炭酸リチウム粒子を酸化物換算で0.01質量%混合し、非晶質シリカ粒子に含まれるカルシウムは酸化物換算で0.66質量%とし、その後、昇温速度は300℃/時で925℃まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 6)
Amorphous silica particles containing calcium were prepared by thermal spraying. Lithium carbonate particles are mixed in an oxide equivalent of 0.01% by mass with respect to the total mass of the mass of spherical amorphous silica and the mass of lithium converted to oxide, and the calcium contained in the amorphous silica particles is oxidized. The temperature was set to 0.66% by mass in terms of physical substances, and then the temperature was raised to 925 ° C. at 300 ° C./hour, and heat treatment was performed in the same manner as in Example 1 except that the temperature was maintained for 6 hours.
(比較例7)
 カルシウムを金属換算で0.66質量%含む非晶質シリカ粒子を溶射法で作製した。当該球状非晶質シリカ粒子に炭酸リチウム粒子を混合せずに、その後、昇温速度は300℃/時で1100℃まで昇温し、6時間保持した以外は、実施例1と同様に熱処理を行った。
(Comparative Example 7)
Amorphous silica particles containing 0.66% by mass of calcium in terms of metal were prepared by thermal spraying. The heat treatment was performed in the same manner as in Example 1 except that the lithium carbonate particles were not mixed with the spherical amorphous silica particles, and then the temperature was raised to 1100 ° C. at 300 ° C./hour and held for 6 hours. went.
 熱処理で得られたシリカ粒子の非晶質と結晶質シリカの存在割合ならびに結晶質シリカ種類と、その割合は、XRDで求めた。本発明では、X線回折装置「D2 PHASER」(ブルカー社製)を用いた。リードベルト法による結晶相の定量分析は、結晶構造解析ソフトウエア「TOPAS」(ブルカー社製)にて行った。 The abundance ratio of amorphous and crystalline silica of the silica particles obtained by heat treatment, the type of crystalline silica, and the ratio thereof were determined by XRD. In the present invention, an X-ray diffractometer "D2 PHASER" (manufactured by Bruker) was used. Quantitative analysis of the crystal phase by the Rietveld method was performed by the crystal structure analysis software "TOPAS" (manufactured by Bruker).
 円形度はフロー式粒子像分析法により求めた。本発明では、フロー式粒子像分析装置「FPIA-3000」(スペクトリス社製)を用いた。 The circularity was determined by the flow type particle image analysis method. In the present invention, a flow type particle image analyzer "FPIA-3000" (manufactured by Spectris) was used.
 本発明の、球状シリカ粒子のリチウム、カルシウム等不純物元素の含有量は、ICP質量分析(ICP-MS)により測定した。具体的には、JIS-K0133に準拠し、ICP-MS(アジレント製「7700X」)を用いて測定した。フッ化水素酸によりシリカ粒子を完全溶解させた水溶液を試料として用いた。ここでは、シリカ粒子中に含まれる不純物元素含有量を、シリカ溶解液中の不純物元素含有量とした。検量線は、試薬のみのベース液を用いた。 The content of impurity elements such as lithium and calcium in the spherical silica particles of the present invention was measured by ICP mass spectrometry (ICP-MS). Specifically, it was measured using ICP-MS (“7700X” manufactured by Agilent) in accordance with JIS-K0133. An aqueous solution in which silica particles were completely dissolved with hydrofluoric acid was used as a sample. Here, the content of the impurity element contained in the silica particles was defined as the content of the impurity element in the silica solution. For the calibration curve, a base solution containing only reagents was used.
 球状石英粒子の平均粒径(D50)は、レーザー回折・散乱式粒度分布測定法により測定した、本発明では、レーザー回折・散乱式粒度分布測定装置「CILAS920」(シーラス社製)を用いた。 The average particle size (D50) of the spherical quartz particles was measured by a laser diffraction / scattering type particle size distribution measuring method. In the present invention, a laser diffraction / scattering type particle size distribution measuring device "CILAS920" (manufactured by Cyrus) was used.
 本発明による実施例で得られた球状結晶質シリカ粒子では、いずれもリチウム含有量が、酸化物換算で0.02質量%以上0.40質量%未満の範囲にあり、かつ結晶質シリカの相が含まれており、当該球状結晶質シリカ粒子における前記結晶質シリカの相の割合が40.0%以上であり、前記結晶質シリカの相に占める石英の割合は80質量%以上であった。本発明による実施例の球状結晶質シリカ粒子は、円形度が0.83~0.95であった。
 平均粒径は、カルシウムを酸化物換算で、0.004質量%含む球状非晶質シリカ粒子が35.1μmであったのに対して、この原料を用いた本発明の球状結晶質シリカ粒子は、35.2μm~35.6μmであった。
 またカルシウムを0.24質量%含む球状非晶質シリカ粒子の平均粒径が33.8μmであったのに対して、この原料を用いた本発明の球状結晶質シリカ粒子は、33.3μm~33.9μmであった。
 さらにまたカルシウムを酸化物換算で0.66質量%含む球状非晶質シリカ粒子が、41.1μmであったのに対して、この原料を用いた本発明の球状結晶質シリカ粒子は、40.9μm~41.5μmであった。
 また、カルシウムを酸化物換算で、0.48質量%含むカルシウム原料と、リチウムを酸化物換算で0.04~0.10質量含むリチウム原料を非晶質シリカ粒子に混合して得られた混合原料粉体を熱処理する場合、球状非晶質シリカ粒子の平均粒径が32.3μmであったのに対して、この混合原料粉体を用いた本発明の球状結晶質シリカ粒子は、31.6μm~35.1μmであった。
 さらに、カルシウムおよびリチウムを酸化物換算で、それぞれ0.82質量%と0.08質量%を含む球状非晶質シリカ粒子では、平均粒径が21.5μmであったのに対して、この原料を用いた本発明の球状結晶質シリカ粒子は、20.3μmと21.9μmであった。
In all of the spherical crystalline silica particles obtained in the examples according to the present invention, the lithium content is in the range of 0.02% by mass or more and less than 0.40% by mass in terms of oxide, and the phase of crystalline silica is used. The ratio of the crystalline silica phase to the spherical crystalline silica particles was 40.0% or more, and the proportion of quartz in the crystalline silica phase was 80% by mass or more. The spherical crystalline silica particles of the examples according to the present invention had a circularity of 0.83 to 0.95.
The average particle size of the spherical amorphous silica particles containing 0.004% by mass of calcium in terms of oxide was 35.1 μm, whereas the spherical crystalline silica particles of the present invention using this raw material had an average particle size of 35.1 μm. , 35.2 μm to 35.6 μm.
The average particle size of the spherical amorphous silica particles containing 0.24% by mass of calcium was 33.8 μm, whereas the spherical crystalline silica particles of the present invention using this raw material had an average particle size of 33.3 μm or more. It was 33.9 μm.
Furthermore, the spherical amorphous silica particles containing 0.66% by mass of calcium in terms of oxide were 41.1 μm, whereas the spherical crystalline silica particles of the present invention using this raw material were 40. It was 9 μm to 41.5 μm.
Further, a mixture obtained by mixing a calcium raw material containing 0.48% by mass of calcium in terms of oxide and a lithium raw material containing 0.04 to 0.10% by mass of lithium in terms of oxide with amorphous silica particles. When the raw material powder was heat-treated, the average particle size of the spherical amorphous silica particles was 32.3 μm, whereas the spherical crystalline silica particles of the present invention using this mixed raw material powder had 31. It was 6 μm to 35.1 μm.
Further, in the spherical amorphous silica particles containing 0.82% by mass and 0.08% by mass, respectively, of calcium and lithium in terms of oxide, the average particle size was 21.5 μm, whereas this raw material. The spherical crystalline silica particles of the present invention using the above were 20.3 μm and 21.9 μm.
 実施例1、実施例7と比較例5を比べると、リチウム含有量が同じ0.25質量%でもカルシウム含有量が酸化物換算で0.004質量%を上回って初めて、球状結晶質シリカ粒子における結晶質シリカの相の割合が40.0%を超えていることが分かる。カルシウムとリチウム元素との共存による相乗効果が発現し結晶化が促進されていることが分かる。さらに比較例1をみるとカルシウムが酸化物換算で0.004質量%含有されてもリチウムが添加されていないと結晶化が進展しない。リチウムとカルシウムの共存が必要であることが分かる。 Comparing Example 1 and Example 7 with Comparative Example 5, even if the lithium content is the same 0.25% by mass, the calcium content exceeds 0.004% by mass in terms of oxide only in the spherical crystalline silica particles. It can be seen that the ratio of the phase of crystalline silica exceeds 40.0%. It can be seen that the synergistic effect of the coexistence of calcium and the lithium element is exhibited and crystallization is promoted. Further, looking at Comparative Example 1, even if calcium is contained in an oxide equivalent of 0.004% by mass, crystallization does not proceed unless lithium is added. It can be seen that the coexistence of lithium and calcium is necessary.
 実施例4~6、実施例13~16と比較例6および比較例7を比べるとリチウムの添加量の下限値は0.02質量%であることがわかる。 Comparing Examples 4 to 6, Examples 13 to 16 with Comparative Example 6 and Comparative Example 7, it can be seen that the lower limit of the amount of lithium added is 0.02% by mass.
 実施例1~実施例3と比較例2また、実施例7~実施例9と比較例3を比べると、熱処理温度が高温になるとクリストバライト含有量が増加し、1200℃では結晶質シリカの相中で石英が占める割合が80質量%を下回ってしまうことが分かる。さらに、実施例7~実施例9と比較例4を比べると、熱処理温度が800℃では結晶化は進行せず、球状結晶質シリカ粒子における結晶質シリカの相の割合が40%に満たないことが分かる。好ましい熱処理温度は850℃~1150℃である。更に好ましい温度範囲は875℃~1100℃である。 Example 1 to Example 3 and Comparative Example 2 Further, comparing Example 7 to Example 9 and Comparative Example 3, the cristobalite content increases when the heat treatment temperature becomes high, and in the phase of crystalline silica at 1200 ° C. It can be seen that the proportion of quartz is less than 80% by mass. Further, comparing Examples 7 to 9 with Comparative Example 4, crystallization does not proceed at a heat treatment temperature of 800 ° C., and the ratio of the phase of crystalline silica in the spherical crystalline silica particles is less than 40%. I understand. The preferred heat treatment temperature is 850 ° C to 1150 ° C. A more preferable temperature range is 875 ° C to 1100 ° C.
 実施例12と比較例7を比べると、カルシウムが酸化物換算で、0.66質量%以上含まれていても、リチウム添加量が無添加では、球状結晶質シリカ粒子における結晶質シリカの相の割合が11.4%であり、40.0%に満たない。リチウムが酸化物換算で0.02質量%以上では、球状結晶質シリカ粒子における結晶質シリカの相の割合が40%を超え、かつ石英が結晶質シリカの相に占める割合が80質量%を超える。この高い石英結晶化率は、カルシウムとリチウム共存による相乗効果であることが見出された。なお、リチウムやカルシウムの含有量を増加させても(リチウム酸化物換算で0.02質量%以上、カルシウム酸化物換算で0.004%以上)、結晶化度&石英化度に問題無く、球状結晶質シリカ粒子における結晶質シリカの相の割合が40.0%以上であり、かつ石英が結晶質シリカの相に占める割合が80質量%を超えた。 Comparing Example 12 and Comparative Example 7, even if calcium is contained in an oxide equivalent of 0.66% by mass or more, when the amount of lithium added is not added, the phase of crystalline silica in the spherical crystalline silica particles is the same. The ratio is 11.4%, which is less than 40.0%. When lithium is 0.02% by mass or more in terms of oxide, the ratio of the crystalline silica phase in the spherical crystalline silica particles exceeds 40%, and the ratio of quartz to the crystalline silica phase exceeds 80% by mass. .. It was found that this high quartz crystallization rate is a synergistic effect due to the coexistence of calcium and lithium. Even if the content of lithium or calcium is increased (0.02% by mass or more in terms of lithium oxide, 0.004% or more in terms of calcium oxide), there is no problem in the degree of crystallization and the degree of quartzification, and it is spherical. The ratio of the crystalline silica phase to the crystalline silica particles was 40.0% or more, and the ratio of quartz to the crystalline silica phase exceeded 80% by mass.
 本発明の実施例および比較例で用いた球状結晶性シリカ粒子の、亜鉛の含有量は、金属含換算で、1.0ppm未満、またリチウム以外のアルカリ金属(KおよびNa)の合計は、金属換算で24~36ppm、カルシウム以外のアルカリ土類金属(Mg+Ba)合計は、1.8~42ppm、アルミニウム金属は90~4552ppmであった。これらのリチウム及びカルシウム以外の金属不純物は、結晶化に影響を及ぼさない範囲であればシリカ中に含まれていてもよい。 The zinc content of the spherical crystalline silica particles used in the examples and comparative examples of the present invention is less than 1.0 ppm in terms of metal content, and the total of alkali metals (K and Na) other than lithium is a metal. In terms of conversion, the total amount of alkaline earth metals (Mg + Ba) other than calcium was 1.8 to 42 ppm, and that of aluminum metal was 90 to 4552 ppm. These metal impurities other than lithium and calcium may be contained in silica as long as they do not affect crystallization.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
 本発明の球状結晶質シリカ粒子は、半導体封止用材に限定されず、他の用途にも用いることができる。具体的には、プリント基板用のプリプレグや、各種エンジニアリングプラスチックス等として使用することも可能である。 The spherical crystalline silica particles of the present invention are not limited to the semiconductor encapsulating material, and can be used for other purposes. Specifically, it can also be used as a prepreg for printed circuit boards, various engineering plastics, and the like.

Claims (9)

  1.  円形度が0.80以上であり、リチウムを酸化物換算で0.02質量%以上0.40質量%未満含有し、カルシウムを酸化物換算で0.004質量%以上1.0質量%未満含有し、結晶質シリカの相を含んでなる、球状結晶質シリカ粒子であって、当該球状結晶質シリカ粒子における前記結晶質シリカの相の割合が40.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が80.0質量%以上である球状結晶質シリカ粒子。 The circularity is 0.80 or more, lithium is contained in an oxide equivalent of 0.02% by mass or more and less than 0.40% by mass, and calcium is contained in an oxide equivalent of 0.004% by mass or more and less than 1.0% by mass. The spherical crystalline silica particles containing the crystalline silica phase, wherein the ratio of the crystalline silica phase to the spherical crystalline silica particles is 40.0% or more, and the crystalline silica is contained. Spherical crystalline silica particles in which the proportion of quartz in the phase is 80.0% by mass or more.
  2.   前記結晶質シリカの相の割合が70.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が85.0質量%以上である、請求項1に記載の球状結晶質シリカ粒子。 The spherical crystalline silica particles according to claim 1, wherein the ratio of the crystalline silica phase is 70.0% or more, and the ratio of quartz to the crystalline silica phase is 85.0% by mass or more. ..
  3.  前記結晶質シリカの相の割合が80.0%以上であり、かつ前記結晶質シリカの相に占める石英の割合が90.0質量%以上である、請求項2に記載の球状結晶質シリカ粒子。 The spherical crystalline silica particles according to claim 2, wherein the ratio of the crystalline silica phase is 80.0% or more, and the ratio of quartz to the crystalline silica phase is 90.0% by mass or more. ..
  4.  平均粒径(D50)が3~100μmである、請求項1~3のいずれか1項に記載の球状結晶質シリカ粒子。 The spherical crystalline silica particles according to any one of claims 1 to 3, wherein the average particle size (D50) is 3 to 100 μm.
  5.  請求項1~4のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
     円形度が0.80以上である球状非晶質シリカ粒子に、カルシウム原料およびリチウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
    The method for producing spherical crystalline silica particles according to any one of claims 1 to 4.
    Spherical crystalline material comprising heat-treating a mixed raw material powder obtained by mixing a calcium raw material and a lithium raw material with spherical amorphous silica particles having a circularity of 0.80 or more at 850 ° C to 1150 ° C. Method for producing silica particles.
  6.  請求項1~4のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
     円形度が0.80以上で、且つ、カルシウム成分を含む球状非晶質シリカ粒子に、リチウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
    The method for producing spherical crystalline silica particles according to any one of claims 1 to 4.
    It comprises heat-treating a mixed raw material powder obtained by mixing a lithium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component at 850 ° C to 1150 ° C. A method for producing spherical crystalline silica particles.
  7.  請求項1~4のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
    円形度が0.80以上で、且つ、リチウム成分を含む球状非晶質シリカ粒子に、カルシウム原料を混合して得られた混合原料粉体を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
    The method for producing spherical crystalline silica particles according to any one of claims 1 to 4.
    The present invention comprises heat-treating a mixed raw material powder obtained by mixing a calcium raw material with spherical amorphous silica particles having a circularity of 0.80 or more and containing a lithium component at 850 ° C to 1150 ° C. A method for producing spherical crystalline silica particles.
  8.  請求項1~4のいずれか1項に記載の球状結晶質シリカ粒子の製造方法であって、
    円形度が0.80以上で、且つ、カルシウム成分及びリチウム成分を含む球状非晶質シリカ粒子を、850℃~1150℃で熱処理することを含む、球状結晶質シリカ粒子の製造方法。
    The method for producing spherical crystalline silica particles according to any one of claims 1 to 4.
    A method for producing spherical crystalline silica particles, which comprises heat-treating spherical amorphous silica particles having a circularity of 0.80 or more and containing a calcium component and a lithium component at 850 ° C to 1150 ° C.
  9.  前記熱処理の温度が、875℃~1110℃である、請求項5~8のいずれか1項に記載の球状結晶質シリカ粒子の製造方法。 The method for producing spherical crystalline silica particles according to any one of claims 5 to 8, wherein the heat treatment temperature is 875 ° C to 1110 ° C.
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